JP2011044582A5 - - Google Patents
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- JP2011044582A5 JP2011044582A5 JP2009191723A JP2009191723A JP2011044582A5 JP 2011044582 A5 JP2011044582 A5 JP 2011044582A5 JP 2009191723 A JP2009191723 A JP 2009191723A JP 2009191723 A JP2009191723 A JP 2009191723A JP 2011044582 A5 JP2011044582 A5 JP 2011044582A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- piezoelectric
- relaxation
- conductive layer
- relaxation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000059 patterning Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- 239000007788 liquid Substances 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RVLXVXJAKUJOMY-UHFFFAOYSA-N lanthanum;oxonickel Chemical compound [La].[Ni]=O RVLXVXJAKUJOMY-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
Claims (10)
前記駆動領域外の前記圧電体層上方に緩和層が設けられ、
少なくとも前記緩和層及び前記圧電体層は第２導電層によって覆われていることを特徴とする圧電素子。 In a piezoelectric element comprising a substrate, a first conductive layer, a second conductive layer, and a piezoelectric layer having a drive region sandwiched between the first conductive layer and the second conductive layer,
A relaxation layer is provided above the piezoelectric layer outside the driving region,
At least the relaxation layer and the piezoelectric layer are covered with a second conductive layer .
前記緩和層は、該緩和層の上面および前記圧電体層の側面を接続する第１側面と、前記
緩和層の上面および前記圧電体層の上面を接続する第２側面と、を有し、
前記第２側面の前記緩和層の上面に対する傾斜は、前記第１側面の前記緩和層上面に対
する傾斜よりも小さい、圧電素子。 In claim 2 ,
The relaxation layer has a first side surface connecting the upper surface of the relaxation layer and the side surface of the piezoelectric layer, and a second side surface connecting the upper surface of the relaxation layer and the upper surface of the piezoelectric layer,
The piezoelectric element, wherein the inclination of the second side surface with respect to the upper surface of the relaxation layer is smaller than the inclination of the first side surface with respect to the upper surface of the relaxation layer.
さらに、前記圧電体層の上面を覆い、該圧電体層と前記第２導電層との間に設けられた
第３導電層を含み、
前記緩和層は、前記第３導電層の上方に設けられた、圧電素子。 In any one of Claims 1 to 3 ,
And a third conductive layer that covers an upper surface of the piezoelectric layer and is provided between the piezoelectric layer and the second conductive layer.
The relaxation layer is a piezoelectric element provided above the third conductive layer.
前記緩和層の材質は、酸化アルミニウム、酸化チタン、窒化ケイ素、および酸化ランタ
ンニッケルから選択される少なくとも一種を含む、圧電素子。 In any one of Claims 1 thru | or 4 ,
The material of the relaxation layer is a piezoelectric element including at least one selected from aluminum oxide, titanium oxide, silicon nitride, and lanthanum nickel oxide.
前記第１導電層、前記圧電体層、前記緩和層および前記第２導電層を含む積層構造を複
数有し、
前記第１導電層は、各前記積層構造における個別電極となっており、前記第２導電層は、複数の前記積層構造における共通電極となっている、圧電素子。 In any one of Claims 1 thru | or 5 ,
A plurality of laminated structures including the first conductive layer, the piezoelectric layer, the relaxation layer, and the second conductive layer;
The first conductive layer is an individual electrode in each of the stacked structures, and the second conductive layer is a common electrode in a plurality of the stacked structures.
前記基板および前記第１導電層の上方に圧電体層を成膜する工程と、
前記圧電体層の上方に緩和層を成膜する工程と、
前記緩和層、および前記圧電体層をパターニングする第１パターニング工程と、
パターニングされた前記緩和層をさらにパターニングする第２パターニング工程と、
前記圧電体層および前記緩和層を被覆するように第２導電層を形成する工程と、
を含み、
前記第２パターニング工程では、前記緩和層は、前記圧電体層の上面の端に沿うように
形成される、圧電素子の製造方法。 Forming a first conductive layer above the substrate;
Forming a piezoelectric layer above the substrate and the first conductive layer;
Forming a relaxation layer above the piezoelectric layer;
A first patterning step of patterning the relaxation layer and the piezoelectric layer;
A second patterning step of further patterning the patterned relaxation layer;
Forming a second conductive layer so as to cover the piezoelectric layer and the relaxation layer;
Including
In the second patterning step, the relaxation layer is formed along the edge of the upper surface of the piezoelectric layer.
前記基板は、可撓性を有し、前記圧電体層の動作によって変形する、圧電アクチュエー
ター。 Including the piezoelectric element according to any one of claims 1 to 6 ,
The substrate is a piezoelectric actuator having flexibility and being deformed by an operation of the piezoelectric layer.
ノズル孔と連通し、前記圧電アクチュエーターの動作によって容積が変化する圧力室と、
を含む、液体噴射ヘッド。 A piezoelectric actuator according to claim 8 ;
A pressure chamber in communication with the nozzle hole, the volume of which is changed by the operation of the piezoelectric actuator;
Including a liquid jet head.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009191723A JP2011044582A (en) | 2009-08-21 | 2009-08-21 | Piezoelectric element, piezoelectric actuator, liquid injection head, liquid injection device, and method of manufacturing the piezoelectric element |
| EP20100173374 EP2287935B1 (en) | 2009-08-21 | 2010-08-19 | Piezoelectric element and method for producing the same, piezoelectric actuator and liquid ejecting head using the same |
| CN2010102601616A CN101997080A (en) | 2009-08-21 | 2010-08-20 | Piezoelectric element and method for producing the same, piezoelectric actuator and liquid ejecting head and device |
| US12/860,741 US8567918B2 (en) | 2009-08-21 | 2010-08-20 | Piezoelectric element, piezoelectric actuator, liquid ejecting head, liquid ejecting apparatus, and method for producing piezoelectric element |
| US13/940,123 US8801152B2 (en) | 2009-08-21 | 2013-07-11 | Piezoelectric element, piezoelectric actuator, liquid ejecting head, liquid ejecting apparatus, and method for producing piezoelectric element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009191723A JP2011044582A (en) | 2009-08-21 | 2009-08-21 | Piezoelectric element, piezoelectric actuator, liquid injection head, liquid injection device, and method of manufacturing the piezoelectric element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011044582A JP2011044582A (en) | 2011-03-03 |
| JP2011044582A5 true JP2011044582A5 (en) | 2012-10-04 |
Family
ID=43066794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009191723A Withdrawn JP2011044582A (en) | 2009-08-21 | 2009-08-21 | Piezoelectric element, piezoelectric actuator, liquid injection head, liquid injection device, and method of manufacturing the piezoelectric element |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8567918B2 (en) |
| EP (1) | EP2287935B1 (en) |
| JP (1) | JP2011044582A (en) |
| CN (1) | CN101997080A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010190706A (en) * | 2009-02-18 | 2010-09-02 | Panasonic Corp | Inertial force sensor |
| JP5822057B2 (en) * | 2010-07-08 | 2015-11-24 | セイコーエプソン株式会社 | Piezoelectric element, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus |
| JP5733510B2 (en) * | 2011-03-22 | 2015-06-10 | セイコーエプソン株式会社 | Liquid ejecting head, liquid ejecting apparatus, piezoelectric element, and method of manufacturing liquid ejecting head |
| JP6106840B2 (en) * | 2012-03-23 | 2017-04-05 | ヤマハ株式会社 | PZT device |
| US8780503B2 (en) * | 2012-10-16 | 2014-07-15 | Seagate Technology Llc | Multi-layer piezoelectric transducer with inactive layers |
| WO2016002971A1 (en) * | 2014-07-04 | 2016-01-07 | セイコーエプソン株式会社 | Ultrasonic sensor |
| CN106142841B (en) * | 2015-03-27 | 2019-09-24 | 兄弟工业株式会社 | Piezoelectric actuator and record head |
| GB2566327A (en) * | 2017-09-11 | 2019-03-13 | Xaar Technology Ltd | Droplet deposition head and actuator component therefor |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3589560B2 (en) * | 1998-01-27 | 2004-11-17 | 株式会社リコー | Ink jet head and method of manufacturing the same |
| US6336717B1 (en) * | 1998-06-08 | 2002-01-08 | Seiko Epson Corporation | Ink jet recording head and ink jet recording apparatus |
| JP2001088441A (en) | 2000-09-04 | 2001-04-03 | Ricoh Co Ltd | Substrate for heat-sensitive recording paper and heat- sensitive recording paper |
| JP2005088441A (en) | 2003-09-18 | 2005-04-07 | Seiko Epson Corp | Liquid injection head and device |
| JP4453655B2 (en) | 2003-09-24 | 2010-04-21 | セイコーエプソン株式会社 | Liquid ejecting head, manufacturing method thereof, and liquid ejecting apparatus |
| JP2005119199A (en) | 2003-10-17 | 2005-05-12 | Seiko Epson Corp | Liquid jetting head and liquid jetting apparatus |
| JP4280198B2 (en) * | 2004-04-30 | 2009-06-17 | 株式会社東芝 | Thin film piezoelectric resonator |
| CN100388521C (en) * | 2004-12-17 | 2008-05-14 | 中国科学院声学研究所 | Silicon micro piezoelectric sensor chip and its preparing method |
| JP2009016625A (en) * | 2007-07-05 | 2009-01-22 | Seiko Epson Corp | Actuator, liquid injection head, and liquid injection apparatus |
| JP5183138B2 (en) | 2007-09-26 | 2013-04-17 | 富士フイルム株式会社 | Piezoelectric actuator and liquid discharge head |
| JP2010003971A (en) | 2008-06-23 | 2010-01-07 | Seiko Epson Corp | Piezoelectric element, manufacturing method thereof, piezoelectric actuator, and liquid spray head |
| JP5320873B2 (en) * | 2008-07-14 | 2013-10-23 | セイコーエプソン株式会社 | Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element |
-
2009
- 2009-08-21 JP JP2009191723A patent/JP2011044582A/en not_active Withdrawn
-
2010
- 2010-08-19 EP EP20100173374 patent/EP2287935B1/en active Active
- 2010-08-20 CN CN2010102601616A patent/CN101997080A/en active Pending
- 2010-08-20 US US12/860,741 patent/US8567918B2/en active Active
-
2013
- 2013-07-11 US US13/940,123 patent/US8801152B2/en active Active
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