JP2011037098A - Method for manufacturing retaining frame for substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method, for manufacturing a retaining frame for a substrate, which can inhibit deformation of the retaining frame made of polyamide-based resin due to the generation of a residual distortion following the effect of continuous stress, and thereby, contributes to reusing the retaining frame. <P>SOLUTION: This method for manufacturing a retaining frame for a substrate is for manufacturing the retaining frame which accommodates a semiconductor wafer inside a hollow retaining frame 1. The retaining frame 1 is formed of a molding material containing at least a polyamide-based resin. Thereafter, the resin retaining frame 1 is irradiated with electron radiations, and the irradiation dose of the electron radiations is set at 10 to 50 kGy per irradiation depth of 10 mm with electron rays in the retaining frame 1. Further, the crosslinking density of the polyamide-based resin is regulated by irradiating the retaining frame 1 with the electron rays, and thus, the characteristics of the polyamide-based resin are improved. Consequently, the shape recovery capability can be enhanced, so that the permanent deformation of the retaining frame 1 due to the generation of the residual distortion can be inhibited. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a substrate holding frame used when holding, storing, processing, transporting, or the like, a substrate made of a semiconductor wafer or the like.

  Although not shown, the conventional substrate holding frame includes a stainless steel holding frame processed into a flat ring shape, and an adhesive holding layer made of a dicing adhesive tape covering the hollow portion is pasted on the back surface of the holding frame. The semiconductor wafer located in the hollow portion of the holding frame is detachably attached and held on the surface of the adhesive holding layer, and the semiconductor wafer is subjected to a dicing process.

  By the way, the conventional holding frame for substrates is heavy and inconvenient to handle because the holding frame is processed by punching a stainless steel plate, and there is a risk of danger to the surroundings when dropped. In view of this point, a method has been proposed in which a resin-made holding frame is injection-molded using a molding material in which polyphenylene sulfide resin (PPS) is filled and mixed with glass fibers for securing rigidity (see Patent Documents 1, 2, and 3). .

  However, in the case of such a method, although the holding frame can be reduced in weight and convenient for handling, the holding frame becomes thick and the compatibility between the holding frame and the acrylic adhesive of the adhesive holding layer is poor. Therefore, with the passage of time, there arises a new problem that the adhesive holding layer peels off from the holding frame and falls off.

  In view of this point, a method has been proposed in which a resin-made holding frame is injection-molded with a molding material in which glass fibers are filled and mixed in a polyamide-based resin. In this method, the holding frame can be reduced in weight and handled conveniently, and the compatibility between the holding frame and the acrylic adhesive of the adhesive holding layer is good. It is possible to prevent the pressure-sensitive adhesive retaining layer from peeling off and falling off.

  Moreover, since the dispersibility of the glass fiber for increasing the rigidity is excellent, a holding frame having a thickness close to the thickness of the stainless steel holding frame can be formed by increasing the filling and mixing amount of the glass fiber. Furthermore, since a holding frame having a thickness approximate to the thickness of the stainless steel holding frame can be obtained, it becomes possible to stop modification and adjustment of an existing semiconductor manufacturing apparatus on a small scale.

JP 2008-273088 A JP 2008-270530 A JP 2007-314650 A

  However, when the holding frame is simply molded from a molding material containing polyamide-based resin, if a continuous stress acts on the holding frame, even if the stress is released, residual strain occurs in the holding frame due to the characteristics of the polyamide-based resin. There is a problem that the holding frame cannot be reused.

  The present invention has been made in view of the above, and a substrate capable of suppressing the deformation of a holding frame made of a polyamide-based resin due to a continuous stress and suppressing the deformation of the holding frame and reusing the holding frame. It is an object of the present invention to provide a method for manufacturing a holding frame for use.

In the present invention, in order to solve the above-mentioned problem, a method for manufacturing a holding frame for a substrate that houses a substrate in a hollow holding frame,
The holding frame is molded from a molding material containing at least a polyamide-based resin. The holding frame is irradiated with an electron beam, and the irradiation amount of the electron beam is 10 to 50 kGy per 10 mm of the irradiation depth of the electron beam with respect to the holding frame. It is characterized by doing.

A plurality of molded holding frames can be stored in an upright state in the packaging box, and an electron beam can be irradiated onto the plurality of holding frames from above the packaging box.
Further, each time the electron beam is irradiated, the packaging box is rotated 90 ° in the vertical direction, and the plurality of holding frames can be irradiated again with the electron beam from above the packaging box.

  Here, the holding frame in the claims is mainly a flat ring shape, but may be a hollow rectangle or polygon as long as there is no problem such as dropping of the adhesive holding layer. The holding frame can be enlarged or reduced in size according to the size of the substrate. When the holding frame is irradiated with an electron beam, the holding frame may be directly irradiated with an electron beam, or the holding frame may be irradiated with an electron beam.

  When the holding frame is stored in the packaging box, the holding frame may be stored directly in the packaging box, or may be stored in the packaging box while being stored in the inner case or the like. Furthermore, the substrate includes at least semiconductor wafers of various sizes (for example, silicon wafers of φ200, 300, 450, 600 mm, etc.), glass substrates, liquid crystal substrates, and the like.

  According to the present invention, since the characteristics of the polyamide resin are improved by irradiating the holding frame with the electron beam, even if continuous stress is applied to the holding frame made of the polyamide resin, residual strain is generated in the holding frame. It is possible to suppress the occurrence of permanent deformation.

  According to the present invention, there is an effect that the holding frame made of polyamide resin can be prevented from being deformed due to the continuous action of stress, and the holding frame can be reused.

If a plurality of molded holding frames are stood up in the packaging box and an electron beam is irradiated onto the plurality of holding frames from above the packaging box, the plurality of holding frames are irradiated with the electron beams collectively. Or sterilizing the holding frame or packaging box, or speeding up the shipping operation of the holding frame.
In addition, if the packaging box is rotated 90 ° in the vertical direction each time the electron beam is irradiated and the electron beam is irradiated again to the plurality of holding frames from above the packaging box, an electron beam non-irradiated region is generated on the holding frame. Can be reduced.

It is a perspective explanatory view showing typically the use state of the substrate holding frame in the embodiment of the method for manufacturing the substrate holding frame according to the present invention. It is a section explanatory view showing typically the substrate holding frame in the embodiment of the manufacturing method of the substrate holding frame according to the present invention. It is a section explanatory view showing typically the irradiation state of the electron beam to the holding frame in the embodiment of the method for manufacturing the holding frame for a substrate according to the present invention. It is a perspective explanatory view showing typically the state where the holding frame was stored in the inner case in the embodiment of the method for manufacturing the board holding frame according to the present invention. It is a perspective explanatory view showing typically the state where an electron beam is irradiated from the upper direction of the cardboard box in the embodiment of the manufacturing method of the substrate holding frame according to the present invention.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In the method for manufacturing a substrate holding frame in the present embodiment, a semiconductor wafer W is placed in a hollow holding frame 1 as shown in FIGS. A method for manufacturing a holding frame for a substrate that is accommodated via a flexible adhesive holding layer 10, wherein the holding frame 1 is molded from a molding material containing at least a polyamide-based resin, and then an electron beam is applied to the resin-made holding frame 1. Is applied evenly to increase the mechanical strength.

  As shown in FIGS. 1 and 2, the holding frame 1 is injection-molded into a flat ring-shaped flat plate with a molding material containing at least a polyamide-based resin according to the size of the semiconductor wafer W, and the inner peripheral surface 2 has a predetermined surface. The semiconductor wafer W is accommodated in the hollow portion 3 through a gap. The molding material is prepared by, for example, filling a polyamide-based resin such as polyamide resin or nylon with a filler for improving rigidity and the like.

  The semiconductor wafer W is made of a thin, round silicon wafer of, for example, 6, 8, or 12 inches. A circuit pattern or a semiconductor device is formed on the front surface, the back surface is back-ground, accommodated in the holding frame 1, and cooled. Dicing processing is performed by a dicing blade in a state where the cleaning water is supplied.

  The adhesive holding layer 10 is formed integrally with a thin film by laminating an adhesive layer made of an acrylic adhesive on the surface of a base material layer made of, for example, polyolefin or vinyl chloride resin, and is detachably attached to the back surface of the holding frame 1 The semiconductor wafer W is detachably adhered to the hollow portion 3 by being adhered.

  As shown in FIGS. 3 to 5, a plurality of holding frames 1 are stored in a rectangular inner case 20 after being injection-molded with the molding material, and the inner case 20 is a shipping packaging box. A plurality of the cardboard boxes 21 are stored side by side in an upright state, and an electron beam indicated by an arrow is irradiated from an electron beam irradiation apparatus (not shown) outside in the stored state.

  As shown in FIG. 3, the irradiation amount of the electron beam passing through the inner case 20 and the cardboard box 21 is in the range of 10 to 50 kGy per 10 mm of the electron beam irradiation depth to the holding frame 1. The reason why the electron beam irradiation amount is 10 to 50 kGy or less is that when it is less than 10 kGy, residual strain occurs with respect to stress over time, and conversely when it exceeds 50 kGy, the polyamide-based resin is deteriorated.

  When measuring the irradiation amount of the electron beam, as shown in FIG. 3, the electron beam dosimeter 21 may be attached to the inner and outer peripheral surfaces of the holding frame 1 and measured. The dosimeter 21 is not particularly limited, and examples thereof include a CTA dosimeter (manufactured by Fuji Film). In addition, the electron beam irradiation apparatus includes a scan type, an area beam type, a self shield type, and the like, but is not particularly limited.

  In the above, when manufacturing a holding frame for a substrate, first, a mold for the holding frame 1 is clamped, a molding material containing a polyamide-based resin is put into an injection molding machine, and the molding material is melted. The holding frame 1 is formed by injecting it into the mold, and the pressure is maintained. When the molding material is injected in this way, the molded holding frame 1 is taken out by removing the holding frame 1 from the mold.

  Next, a plurality (for example, 20 to 25 sheets) of the formed holding frame 1 are stacked on the inner case 20 and stored (see FIG. 4), and a plurality of the inner cases 20 are stored in a standing state on the cardboard box 21. While the cardboard box 21 is placed on the pallet 30 and the pallet 30 is conveyed by a conveyor (see FIG. 5), an electron beam is irradiated from the upper direction by an electron beam irradiation device, so that a part of the plurality of holding frames 1 is applied. Irradiate an electron beam.

  When a part of each holding frame 1 is irradiated with an electron beam, the cardboard box 21 is rotated 90 ° on the pallet 30 in the vertical direction, and the cardboard box 21 with the non-irradiated surface facing upward is conveyed by a conveyor. By irradiating the plurality of holding frames 1 again with the electron beams from the direction, a part of the non-irradiated region of the holding frame 1 is irradiated with the electron beams.

  After the electron beam irradiation, the corrugated cardboard box 21 is rotated by 90 ° again on the pallet 30 up and down, and the cardboard box 21 with the irradiation surface facing upward is conveyed by the conveyor to the plurality of holding frames 1 from above. By irradiating the line again, and then irradiating the electron beam a plurality of times (total 4 times) by repeating such an operation, the entire area of the holding frame 1 can be irradiated with the electron beam.

  In this way, the holding frame 1 is not simply irradiated with the electron beam from one direction, but the holding frame 1 is irradiated with the electron beam a plurality of times while rotating the holding frame 1 at a predetermined angle. In addition, since the irradiation amount of the electron beam does not vary greatly between the front and back surfaces of the holding frame 1, it is possible to effectively suppress and prevent the difference in the properties of the holding frame 1 from occurring.

  The holding frame 1 arriving at the shipping factory is sequentially taken out from the cardboard box 21 and the inner case 20, and then the adhesive holding layer 10 that holds and holds the semiconductor wafer W is adhered, and the semiconductor wafer W is subjected to a dicing process. Is done.

  According to the above configuration, the holding frame 1 is irradiated with an electron beam that passes through the inner case 20 and the corrugated cardboard box 21 to adjust the crosslink density of the polyamide resin, improve the properties of the polyamide resin, and improve the shape recovery capability. Therefore, even if a continuous stress is applied using the holding frame 1 made of a polyamide-based resin, it is possible to suppress the permanent distortion caused by the residual strain in the holding frame 1. Therefore, the holding frame 1 can be reliably reused.

  Further, the holding frame 1 can be reduced in weight and handled, and the compatibility between the holding frame 1 and the acrylic adhesive of the pressure-sensitive adhesive holding layer 10 is good. It is possible to prevent the pressure-sensitive adhesive holding layer 10 from peeling off and falling off. Furthermore, since electron beams can be handled at room temperature and in a short time, it is highly expected that special equipment will be omitted or reduced.

  In the above embodiment, the holding frame 1 is formed into a flat ring shape. However, the present invention is not limited to this. For example, a notch for alignment or a straight portion is formed on the outer peripheral surface of the holding frame 1. Also good. Further, a plurality of molded holding frames 1 may be stored in the inner case 20 and a plurality of the inner cases 20 may be stored in a state where they are laid in the cardboard box 21. Further, if there is no particular hindrance, the electron beam may be irradiated from below or in the left-right direction of the cardboard box 21.

Next, examples of the present invention will be described together with comparative examples.
[Example 1]
First, in order to manufacture a holding frame for 6-inch semiconductor wafers, a dedicated metal mold is clamped and a molding material containing nylon (made by Mitsubishi Engineering Co., Ltd .: trade name Reny) is put into an injection molding machine. The holding frame was molded by holding the pressure by melting the molding material and injecting it into the mold. The molding material was prepared by mixing nylon and glass fiber. When the molding material was injected, the holding frame for a 6-inch semiconductor wafer was taken out by removing the mold. It was confirmed that the holding frame for the 6-inch semiconductor wafer had an inner diameter of 194 mm, an outer diameter of 228 mm, and a thickness of 1.5 mm.

  Next, dosimeters were respectively attached to the inner and outer peripheral surfaces of the taken out holding frame, and an electron beam of 10 MeV was irradiated to the holding frame a total of four times by an electron beam irradiation apparatus. When irradiating the electron beam, the holding frame that was raised each time the electron beam was irradiated was rotated 90 °, and the irradiated surface was changed, and irradiation was performed four times. When the electron beam was irradiated under such conditions, the electron beam dose was in the range of 24.2 to 35.1 kGy per 10 mm of the electron beam irradiation depth on the holding frame.

  Next, it is confirmed that the warp of the holding frame is 0.3 mm or less, the adhesive holding layer is adhered to the back surface of the holding frame, the holding frame is accommodated in the holding frame cassette, and the mass is 0.2 N at the center. The weight was placed and the holding frame was bent. The weight body had a width of 27.5 mm and a length of 217 mm. After placing the weight on the holding frame and bending it, leave it in this state for two weeks, remove the weight after two weeks, and then move the holding frame from the holding frame cassette onto the work table and warp the holding frame. Are summarized in Table 1.

[Example 2]
First, in order to manufacture a holding frame for an 8-inch semiconductor wafer, a special mold is clamped and a molding material containing nylon (made by Mitsubishi Engineering Co., Ltd .: trade name Reny) is put into an injection molding machine. As in Example 1, a holding frame for an 8-inch semiconductor wafer was molded and taken out. It was confirmed that the holding frame for the semiconductor wafer had an inner diameter of 250 mm, an outer diameter of 296 mm, and a thickness of 2 mm.

  Next, dosimeters were respectively attached to the inner and outer peripheral surfaces of the taken out holding frame, and an electron beam of 10 MeV was irradiated to the holding frame a total of four times by an electron beam irradiation apparatus. When irradiating the electron beam, the holding frame that was raised each time the electron beam was irradiated was rotated 90 °, and the irradiated surface was changed, and irradiation was performed four times. When the electron beam was irradiated under such conditions, the electron beam dose was in the range of 23.3 to 50 kGy per 10 mm of the electron beam irradiation depth on the holding frame.

  Next, it was confirmed that the warp of the holding frame was 0.3 mm or less, and an adhesive holding layer was adhered to the back surface of the holding frame. Thereafter, the warp of the holding frame was measured in the same manner as in Example 1, and Table 1 It was summarized in.

[Comparative Example 1]
A holding frame for a 6-inch semiconductor wafer was manufactured in the same manner as in Example 1, but the electron beam irradiation was omitted. When the holding frame was manufactured without irradiating the electron beam, the warpage was measured in the same manner as in Example 1 and summarized in Table 1.

[Comparative Example 2]
A holding frame for an 8-inch semiconductor wafer was manufactured in the same manner as in Example 1, but the electron beam irradiation was omitted. When the holding frame was manufactured without irradiating the electron beam, the warpage was measured in the same manner as in Example 1 and listed in Table 1.

[Comparative Example 3]
A holding frame for a 6-inch semiconductor wafer was manufactured in the same manner as in Example 1, but the electron beam irradiation amount was in the range of 1.4 to 5.2 kGy per 10 mm of the electron beam irradiation depth to the holding frame. did. When the holding frame was manufactured, its warpage was measured in the same manner as in Example 1 and listed in Table 1.

[Comparative Example 4]
A holding frame for an 8-inch semiconductor wafer was manufactured in the same manner as in Example 1, but the amount of electron beam irradiation was in the range of 2.3 to 7.8 kGy per 10 mm of electron beam irradiation depth to the holding frame. did. When the holding frame was manufactured, its warpage was measured in the same manner as in Example 1 and listed in Table 1.

[Comparative Example 5]
A holding frame for a 6-inch semiconductor wafer was manufactured in the same manner as in Example 1, but the amount of electron beam irradiation was in the range of 62.1 to 86.9 kGy per 10 mm of electron beam irradiation depth to the holding frame. did. When the holding frame was manufactured, its warpage was measured in the same manner as in Example 1 and listed in Table 1.

[Comparative Example 6]
A holding frame for an 8-inch semiconductor wafer was manufactured in the same manner as in Example 1, but the electron beam irradiation amount was in the range of 51.4 to 93.8 kGy per 10 mm of the electron beam irradiation depth to the holding frame. did. When the holding frame was manufactured, its warpage was measured in the same manner as in Example 1 and summarized in Table 1.

  As is clear from Table 1, the holding frames of Examples 1 and 2 were different from Comparative Examples 1, 2, 3, 4, 5, and 6 and obtained good results with little warpage. As a result, it has been found that the holding frame can be reliably reused.

DESCRIPTION OF SYMBOLS 1 Holding frame 2 Inner peripheral surface 3 Hollow part 10 Adhesive holding layer 20 Inner case 21 Cardboard box (packaging box)
W Semiconductor wafer (substrate)

Claims (3)

  A method for manufacturing a substrate holding frame in which a substrate is accommodated in a hollow holding frame, wherein the holding frame is formed of a molding material containing at least a polyamide-based resin, and the electron beam is irradiated to the holding frame. A method for producing a holding frame for a substrate, wherein the amount of irradiation of the beam is 10 to 50 kGy per 10 mm of the irradiation depth of the electron beam to the holding frame.   2. The method of manufacturing a holding frame for a substrate according to claim 1, wherein a plurality of molded holding frames are stored in a standing state in the packaging box, and the plurality of holding frames are irradiated with an electron beam from above the packaging box.   The method for manufacturing a holding frame for a substrate according to claim 2, wherein the packaging box is rotated 90 ° in the vertical direction each time the electron beam is irradiated, and the plurality of holding frames are irradiated again with the electron beam from above the packaging box.

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