JP2011028845A - Semiconductor device and method of controlling semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce the leakage current of a non-selective block. <P>SOLUTION: The semiconductor device includes a plurality of memory blocks which include a plurality of memory cell groups having memory cells connected to word lines and selection gates for selecting the plurality of memory cell groups, and the selection gates in the non-selective memory block are programmed at a read operation. In the read operation, the selection gates can be formed perfectly to the off-state by programming the selection gates in the non-selection memory block, and the leakage current of the non-selection block at the read operation can be suppressed. Thus, an exact reading operation is possible and also a circuit scale can be made smaller. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device and a method for controlling the semiconductor device.

  NAND flash memory and AND flash memory are often used as flash memories for data storage. As an example of the NAND flash memory, those having a floating gate (FG) as a charge storage layer are described in Patent Document 1 and Patent Document 2.

  FIG. 1 is a diagram showing an array structure of a conventional FG type NAND flash memory. In FIG. 1, WL000 to WL031 are word lines arranged in units of one block, BLm is a bit line, and M is a memory cell. Each bit line BLm is connected to page buffers 100 to 10m. 32 memory cells M are connected in series for each bit line BLm in a unit of one block to constitute one memory cell column. One end of each of the memory cell columns M000 to M031,..., Mm00 to Mm31 is connected to the array Vss line ARVSS via selection source gates SSG00 to SSG0m that respectively respond to the potential of the selection line SSG0. The other end of each is connected to the bit lines BL0 to BLm via select drain gates SDG00 to SDG0m and drain contacts 220 to 22m respectively responsive to the potential of the select line SDG0. By controlling the selection gate based on the address signal, a desired block is selected, and other blocks are not selected. A plurality of memory cells connected to the bit line unit of each block form one group (memory cell group).

  FIG. 2 is a cross-sectional view of a conventional FG type NAND flash memory. In FIG. 2, M is a memory cell, BL is a bit line, SSG is a selective source gate, SDG is a selective drain gate, 11 is a source diffusion layer, 12 is a diffusion layer, 13 is a drain diffusion layer, and 22 is a drain contact. . W_SDG is the wiring width of the selected drain gate SDG, W_WL is the wiring width of the memory cell M, S_SDG-WL is the distance between the selection line SDGn and the word line WL, and S_WLWL is the distance between adjacent word lines. The relationship between the wiring width of the selected drain gate SDG and the memory cell M is W_SDG> W_WL. The relationship between the interval between the selection line SDGn and the word line WL and the interval between adjacent word lines WL is S_SDG-WL> S_WL-WL.

  FIG. 3A is a diagram showing a cell sectional structure of an FG type NAND flash memory, and FIG. 3B is a diagram showing a sectional structure of a select gate. As shown in FIG. 3A, the memory cell M includes a tunnel oxide film 32, a polycrystalline silicon floating gate 33, an oxide film 34, a nitride film 35, an oxide film 36, and a control gate 37 on a silicon substrate 31. Are sequentially stacked. As shown in FIG. 3B, the select gates SSG and SDG have a structure in which an oxide film 42 and a gate electrode 43 are sequentially stacked on a silicon substrate 41. Here, the relationship between the wiring width W_WL of the memory cell M and the wiring widths of the selection gates SSG and SDG is W_WL <W_SSG and W_SDG. As described above, the reason why the wiring widths W_SSG and W_SDG of the selection gates on the drain and source sides are wider than the wiring width W_WL of the memory cell is to prevent leakage of the gate portion during reading or programming. Further, the reason why the interval S_SDG-WL between the selection gate and the word line is wider than the interval S_WL-WL between adjacent word lines is to make the width of all the word lines the same when the word line WL is processed. is there.

  FIG. 4 is a diagram showing the Vt distribution of the FG type NAND flash memory. The threshold value of the FG type NAND flash memory cell is set to negative in the erased state (data 1) and positive in the written state (data 0).

  In recent years, development of a SONOS (semiconductor-oxide-nitride-oxide-semiconductor) type NAND flash memory is underway. This stores information using, for example, a nitride film as a charge storage layer instead of a floating gate. This technique is described in Patent Document 3. In the nonvolatile semiconductor memory having the SONOS structure, multi-value information can be retained by injecting charges into the gate insulating film from the source side or the drain side.

Japanese Patent Publication No. 2001-308209 Japanese Patent Gazette No. 2001-518696 Japanese Patent Publication No. 2003-204000

  In a conventional NAND cell array, selection gates are used to sort into blocks (erase units) and various operations are performed on the blocks, and unselected blocks are avoided from being disturbed by selected blocks.

  However, as high integration and low voltage progress, there is a problem that an accurate read operation cannot be performed due to a leakage current of a non-selected block that occurs at the time of reading or programming. In recent years, the core cell array is usually 32 cells in one NAND string for high integration. However, in the SONOS NAND flash memory, the influence of disturbance is increased, so 16 cells are desirable. In this case, since the number of drain contacts and source diffusion lines increases with respect to the memory cell region as well as the number of selection gates, the entire region becomes large. In particular, as described with reference to FIGS. 2 and 3, since the wiring width of the conventional selection gates SDG and SSG is larger than the wiring width of the memory cell M, the circuit scale is reduced as the number of selection gates increases. There is a problem that can not be.

  Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to provide a semiconductor device capable of performing an accurate read operation and reducing the circuit scale and a method for controlling the semiconductor device.

The present invention includes a plurality of memory blocks including a plurality of memory cell groups including memory cells connected to a word line and a selection gate for selecting the plurality of memory cell groups, and the selection gate is storable . When reading, the selection gate in the non-selected block is a programmed semiconductor device. According to the present invention, since a threshold value can be made higher than that of a normal transistor by using a selectable storage gate, the selection gate of the non-selected block can be completely turned off when a predetermined voltage is applied to the gate. Thereby, the leak in a non-selected block can be suppressed. Therefore, accurate reading can be performed and the circuit scale can be reduced.

The present invention is a control method of a semiconductor device including a plurality of memory blocks including a selection gate for selecting a plurality of memory cell groups and the plurality of memory cells including the memory cells connected to the word line, the read And a method of controlling the semiconductor device including a step of programming (storing data) the selection gate. According to the present invention, since the threshold value can be made higher than that of a normal transistor by storing data in the selection gate, the selection gate of the non-selected block can be completely turned off when a predetermined voltage is applied to the gate. Thereby, the leak in a non-selected block can be suppressed. Therefore, accurate reading can be performed and the circuit scale can be reduced.

  ADVANTAGE OF THE INVENTION According to this invention, while being able to perform exact read-out operation | movement, the semiconductor device which can reduce a circuit scale, and the control method of a semiconductor device can be provided.

It is a figure which shows the array structure of the conventional FG type NAND flash memory. It is sectional drawing of the conventional FG type NAND flash memory. (A) is a figure which shows the cell cross-section of FG type NAND flash memory, (b) is a figure which shows the cross-section of a selection gate. It is a figure which shows Vt distribution of FG type NAND flash memory. 1 is a block diagram of a NAND flash memory according to a first embodiment. FIG. 1 is a diagram showing an FG type NAND flash memory array configuration and precharge voltage conditions according to a first embodiment. FIG. It is a figure which shows a row decoder and a switching circuit. 3 is a timing chart of read voltage conditions according to the first embodiment. It is a figure which shows the sense voltage conditions at the time of read and the FG type NAND flash memory array structure concerning 2nd Embodiment. It is Vt distribution of the FG type | mold selection gate which concerns on 2nd Embodiment. It is a figure explaining the program voltage conditions of the NAND flash memory array which concerns on 2nd Embodiment. It is a figure which shows the erase voltage conditions of the FG type NAND flash memory by 2nd Embodiment. FIG. 7 is an array diagram relating to a SONOS type NAND flash memory according to a third embodiment. (A) is a sectional view of a SONOS type memory cell, (b) is a sectional view of a SONOS type selective drain gate, and (c) is a sectional view of a selected source gate. It is a figure which shows the threshold value distribution of a SONOS type NAND flash memory. It is a figure which shows the threshold value distribution of a SONOS type selection drain gate. It is a figure which shows the sense voltage conditions at the time of the SONOS type NAND flash memory array structure and read based on 3rd Embodiment.

Hereinafter, the best mode for carrying out the present invention will be described.
[First Embodiment] FIG. 5 is a block diagram of a NAND flash memory according to a first embodiment. The flash memory 51 includes a memory cell array 52, an I / O register / buffer 53, an address register 54, a status register 55, a command register 56, a state machine 57, a high voltage generation circuit 58, a row decoder 59, a page buffer 60, and a column decoder 61. including.

  The memory cell array 52 is provided with rewritable nonvolatile memory cell transistors along a plurality of word lines WL and a plurality of bit lines BL arranged in a matrix.

  The I / O register buffer 53 controls various signals or data corresponding to the I / O terminals. The address register 54 is for temporarily storing an address signal input through the I / O register buffer 53. The status register 55 is for temporarily storing status information. The command register 56 is for temporarily storing operation commands input through the I / O register buffer 53.

  The state machine 57 controls the operation of each circuit in the device in response to each control signal. The high voltage generation circuit 58 generates a high voltage used inside the device. The high voltage used inside the device includes a high voltage for data writing, a high voltage for data erasing, a high voltage for data reading, and sufficient writing / erasing is performed on memory cells during data writing / erasing. A high voltage for verification used to check whether or not

  The row decoder 59 decodes the row address input through the address register 54 and selects the word line WL. The page buffer 60 includes a data latch circuit and a sense amplifier circuit, and latches and outputs data stored in a plurality of memory cells connected to the same word line. The column decoder 61 decodes the column address input through the address register 54 and selects a plurality of column data read to the page buffer 60. The I / O register buffer 53, row decoder 59, column decoder 61, and high voltage generation circuit 58 function based on control from the state machine 57.

FIG. 6 is a diagram showing an FG type NAND flash memory array configuration according to the first embodiment and precharge voltage conditions at the time of reading. Reference numeral 52 denotes a memory cell array, and 60 denotes a page buffer. Thirty-two FG type memory cells are connected in series to form a NAND string. A selective drain gate SDG0m and a selective source gate SSG0m are connected to both ends. The select drain gate SDG0m is further connected to the bit line BLm via the drain contact 22m, and the bit line BLm is connected to the page buffer 60m.

  These NAND string m blocks (m is 512 bytes + 16 bytes) constitute an erase unit. A unit of m memory cells connected to one word line constitutes a page which is a read or program access unit. Therefore, reading and programming are simultaneously performed on m cells. Similarly, a plurality of other blocks are arranged in the bit line BL direction. The bit line BLm is common to each block. Two adjacent blocks are mirrored with respect to the drain contact 22. A desired block is selected by controlling the selection drain gate SDG and the selection source gate SSG based on the address signal, and the other blocks are not selected. FIG. 6 shows an example in which the block BLOCK0 is a selected block and the block BLOCK1 is a non-selected block. Here, (1) in the figure indicates a selection page (Sel WL).

  FIG. 7 is a diagram illustrating a row decoder and a switching circuit. In FIG. 7, reference numeral 59 is the row decoder shown in FIG. 5, and 62 is a switching circuit. The row decoder 59 includes a decoder XDEC_n for each block, and decodes the address supplied from the address register 54. The switching circuit 62 activates the word line WL of the memory cell M, the selection line SSGn of the selection source gate SSG, and the selection line SDGn of the selection drain gate SDG according to the decoding result. Block n is selected by signal SEL (n) from XDEC_n. At this time, all the word lines WLn00 to WLn31, the selection drain gate selection line SDGn, and the selection source gate selection line SSGn in the block n are connected to the voltage supply lines (XT (0) to XT (0) to the row decoder via the pass transistors. XT (31), GSSG, GSDG). The signal UNSEL (n) turns off the selected drain gate SDGn in the block n by a pull-down transistor. The signal UNSELS (n) turns off the selected source gate SSG (n) in the block n by a pull-down transistor.

  Next, the read operation of the NAND flash memory according to the first embodiment will be described. Table 1 shows the read conditions in the selected block and the non-selected block according to the first embodiment.

  As shown in Table 1, a selected word line WL (Sel WL), an unselected word line WL (UselWL), a selected drain gate SDG (Sel SDG), an unselected SDG (Unsel SDG), a selected source gate (Sel SSG), Each voltage is applied to the unselected source gate (Unsel SSG), the array Vss line ARVSS, and all the bit lines (BL) to pre-charge all the bit lines BL.

  FIG. 8 is a timing chart of read voltage conditions according to the first embodiment. Reading starts from precharging the bit line BLm. At this time, in the selected block BLOCK0, the selected word line WL030 is applied with the voltage Vpass (4V), and the non-selected word line WL is also applied with the voltage Vpass. Here, Vpass is a voltage that can be turned on even if the data of the non-selected memory cell is zero.

  In the present invention, in the adjacent unselected block BLOCK1, the voltage Vcc is applied to the selection line SDG1 of the selection drain gate SDG1n ((2) in FIG. 6), and the voltage Vpass is applied to all the word lines WL100 to WL131. Thus, at the time of reading, all the memory cells M ((3) in FIG. 6) in the non-selected block BL0CK1 adjacent to the selected block BLOCK0 are selected. Since the voltage Vss is applied to the selection line SSG1 of the selection source gate SSG1n, the selection source gate SSG1n is off. As a result, the bit line BLm is charged to about 1V, and the channel portion of the unselected memory cell M that is turned on is also charged to about 1V. At this time, in both the selected block and the non-selected block, the signal line SEL (0), SEL (1) for the pass transistor for selecting the word line WL and the selection gate has a high voltage (Vpass + pass transistor of about 6V) as the voltage HVPP. Threshold level) is applied.

  Next, the sensing operation is started. In the sensing operation, a voltage is applied as shown in Table 1 and FIG. 8, and the operation of turning off the SDG1n of the non-selected block that has been turned on earlier and floating the voltage of the non-selected word line WL is performed. The floating word line WL holds the voltage Vpass (4V). This is realized by setting the signal SEL (1) to Vss and the signal UNSEL (1) to Vcc. As a result, a back bias is applied to the selected drain gate SDG1n of the unselected block BLOCK1. That is, a voltage of about 1 V is constantly applied to the source of the selected drain gate SDG1n of the unselected block BLOCK1. Therefore, the selected drain gate SDG1n can be completely turned off as compared with the conventional case, and the leakage current in the unselected block BLOCK1 at the time of reading can be suppressed. It is preferable to control all other non-selected blocks in the same manner.

  The sensing operation in the selected block BLOCK0 is the same as the conventional one. That is, while the potential of the selected word line WL remains Vss (potential between the threshold values of data 0 and data 1), the supply of the precharge voltage to the bit line is cut off and the selected source gate SSG0n is turned on. Then, among the n selected memory cells, the memory cell with data 0 is turned off, and the bit line BLm connected to the memory cell maintains 1V. On the other hand, since the memory cell M for data 1 is turned on, the bit line BLm connected to the memory cell M is discharged, and the voltage drops. When the predetermined period has passed, the set signal SET for setting sense data is pulsed in the latch circuit in the page buffer 60m, and the sensing operation is completed. The program and erase operations are the same as in the prior art.

  [Second Embodiment] Next, a second embodiment will be described. FIG. 9 is a diagram showing an FG type NAND flash memory array according to the second embodiment and sense voltage conditions at the time of reading. Table 2 shows the read conditions in the selected block and the non-selected block of the second embodiment.

  In FIG. 9, reference numeral 152 denotes a memory cell array, and 60m denotes a page buffer. Thirty-two FG type memory cells are connected in series to form a NAND string. A selective drain gate SDG0m and a selective source gate SSG0m are connected to both ends. In FIG. 9, the block BLOCK0 is a selected block, and the block BLOCK1 is a non-selected block.

  The feature of the second embodiment is that the selective drain gate SDG is an FG type memory cell of the same type as the core. Further, the width of the control word line CWLn is equal to the width of the word line WL, and the space between the control word line CWLn and the word line WL is equal to the space between adjacent word lines WL. The selection source gate SSG is a normal selection transistor. The selective drain gate SDG is programmed, and the threshold value is higher than that of a normal transistor (0.5 V).

  FIG. 10 is a Vt distribution of the FG type selection gate according to the second embodiment. As shown in FIG. 10, all the selected drain gates SDG are programmed, and the threshold value is higher than that of a normal transistor (0.5 V). Therefore, since the selected drain gate SDG1n can be completely turned off at the time of sensing, leakage in the non-selected block BLOCK1 can be suppressed.

  Reading starts from precharging the bit line BLm. In the precharge operation, a voltage is applied as shown in Table 2 and FIG. 9, and then a sense operation starts. In the sensing operation, a voltage is applied as shown in Table 2 and FIG. The selected drain gate SDG1n ((2) in FIG. 9) in the unselected block BLOCK1 is programmed, and the threshold value of the selected drain gate SDG1n in the unselected block BLOCK1 is higher than that of the normal transistor (0.5V). Yes. For this reason, when the voltage Vss is applied to the gate, the selective drain gate SDG1n can be completely turned off. Therefore, the leakage in the non-selected block BLOCK1 can be suppressed with the conventional precharge operation without performing the operation of the first embodiment. Needless to say, the effect is great when combined with the first embodiment.

  Thus, by setting the selection drain gate SDG to the same memory as the core and setting the threshold value high, the width of the control word line CWL for selecting the selection drain gate can be made the same as that of the word line WL. It becomes. Therefore, it is not necessary to make a large space between the control word line CWL and the word line WL, and a small area array can be realized.

  FIG. 11 is a diagram for explaining program voltage conditions of the NAND flash memory array according to the second embodiment. In FIG. 11, (1) shows a selected page, and (2) shows a memory cell designated for writing. First, the selected bit line BL1 is supplied with 0V, the non-selected bit lines BL other than the selected bit line BL1 are supplied with the voltage Vcc, and the control word line CWL0 is supplied with the voltage Vpass in the selected block BLOCK0. At this time, the channel portion of the control word line CWL0 in the non-selected bit line BL (non-write) other than the selected bit line BL1 has a potential of Vpass−Vth. Here, Vth is a threshold value of the selective drain gate SDG. For example, if Vcc = 3V, Vpass = 4V, and Vth = 2V, the channel portion is charged to 2V and then floats.

  Next, 20 V is applied as Vpgm to the selected word line WL030, and 10 V is applied as Vpass_pgm to the unselected word lines WL in the selected block BLOCK0. Vpgm is a voltage to be programmed for the write designated cell, and Vpass_pgm is a voltage for applying a voltage from the bit line BL to the drains of all the cells on the selected word line WL. In the write designated cell, electrons are injected from the channel portion to the FG portion by the FN tunnel and written. As described above, 0 V is applied to the channel portion of the write-designated cell, while in the non-write-designated cell, the channel potential of the control word line CWL that has been in the floating state, that is, all of the unselected word lines WL The channel potential rises due to coupling and becomes a high voltage. As a result, the channel portion of the non-write-designated cell similarly becomes a high voltage, and therefore the difference between Vpgm and the channel potential is reduced in the non-write-designated cell, and the program is not performed.

  The feature here is that, since the control drain gate SDG is programmed in the same way as the core cell, Vcc is not applied as in the prior art, but Vpass for turning it on is applied. A voltage of about 1 V is applied to the array Vss line ARVSS, and the selection source gate SSG0n is completely turned off.

  FIG. 12 is a diagram showing erase voltage conditions of the FG type NAND flash memory according to the second embodiment. What is different from the conventional erase operation is that the selected drain gate SDG is also erased together with the core. Therefore, the voltage Vss is applied to the selective drain gate SDG as in the core. A voltage Vpp (20 V) is applied to the substrate, and electrons are emitted from the FG to the substrate by the FN tunnel. Further, the feature here is that the selected drain gate SDG is programmed after erasing. The selection drain gate SDG is programmed by applying the voltage Vpgm to the control word line CWL and applying the voltage Vss to all other word lines WL in the same manner as the selection source gate SSG. In order to program all the selected drain gates SDG, it is not necessary to generate a non-write state to be performed on a non-write-designated cell by coupling, unlike a normal core program.

  [Third Embodiment] Next, a third embodiment will be described. FIG. 13 is an array diagram relating to a SONOS type NAND flash memory according to the third embodiment. Reference numeral 252 denotes a memory cell array, and 60m denotes a page buffer. Sixteen SONOS type memory cells are connected in series to form a NAND string. A selective drain gate SDG0m and a selective source gate SSG0m are connected to both ends. The select drain gate SDG is also a SONOS type. The select drain gate SDG0m is further connected to the bit line BLm via the drain contact 22m. Bit line BLm is connected to page buffer 60m. These NAND string m blocks (m is 512 bytes + 16 bytes) constitute an erase unit.

  A unit of m memory cells connected to one word line WL constitutes a page which is a read or program access unit. Therefore, reading and programming are simultaneously performed on m memory cells. Similarly, a plurality of other blocks are arranged in the bit line BL direction. The bit line BLm is common. Two adjacent blocks are mirrored with respect to the drain contact 22m. A desired block is selected by controlling the selection source gate SSG and the selection drain gate SDG based on the address signal, and the other blocks are not selected. In the example shown in FIG. 13, the block BLOCK0 is a selected block, and the block BLOCK1 is a non-selected block.

  14A and 14B are diagrams showing each transistor structure related to the SONOS type NAND flash memory according to the third embodiment, wherein FIG. 14A is a cross-sectional view of a SONOS type memory cell, and FIG. 14B is a cross-sectional view of a SONOS type select drain gate. FIG. 3C is a cross-sectional view of the selected source gate. As shown in FIG. 14A, the SONOS type memory cell M is formed on a silicon substrate 81, and diffusion regions 81A and 81B are formed in the silicon substrate 81 as a source region and a drain region, respectively. . Further, the surface of the silicon substrate 81 is covered with an ONO film 86 having a structure in which an oxide film 82, a nitride film 83, and an oxide film 84 are stacked, and a polysilicon gate electrode 85 is formed on the ONO film 86.

  As shown in FIG. 14B, the SONOS type selective drain gate SDG is configured on a silicon substrate 91, and diffusion regions 91A and 91B are formed in the silicon substrate 91 as a source region and a drain region, respectively. Yes. Further, the surface of the silicon substrate 91 is covered with an ONO film 96 having a structure in which an oxide film 92, a nitride film 93, and an oxide film 94 are stacked, and a polysilicon gate electrode 95 is formed on the ONO film 96. As shown in FIG. 14C, the selection source gate SSG has a structure in which an oxide film 102 and a gate electrode 103 are sequentially stacked on a silicon substrate 101.

  FIG. 15 is a diagram showing the threshold distribution of the SONOS type NAND flash memory. FIG. 15 is a diagram showing a Vt distribution of the SONOS type memory cell shown in FIG. The SONOS type memory cell has a characteristic that Vt is saturated at a certain voltage when erasing is performed, which is different from the Vt distribution of a normal NAND flash memory. Here, the voltage is shown as 1V. In addition, with respect to the selected word line WL, the voltage Verv applied at the time of erase verify is set to 2V, the voltage Vread applied at the time of read is set to 2.5V, and the voltage Vpgmv applied at the time of write verify is set to 3V. The voltage Vpass applied to WL is set to 6V.

  FIG. 16 is a diagram showing a threshold distribution of the SONOS type selective drain gate. As shown in FIG. 16, since the SONOS type is in an erased state and Vt is as high as about 1 V (the conventional selection transistor is about 0.5 V), the selected drain gate SDG is programmed in advance as in the second embodiment to obtain Vt There is no need to increase.

  FIG. 17 is a diagram showing a SONOS type NAND flash memory array configuration according to the third embodiment and sense voltage conditions at the time of reading. Table 3 shows read conditions in the selected block and the non-selected block according to the third embodiment.

  Vread = 2.5V, Vpass = 6V, and Vcc = 3.0V. Unlike the second embodiment, the selective drain gate SDG does not need to be programmed because Vt in the erased state is originally higher (1 V) than a normal transistor (Vt = 0.5 V). Utilizing this high Vt, leakage is prevented even with a narrow wiring width. Therefore, the control word line CWL can have the same wiring width as the word line WL.

  The difference from the example of the FG type cell of the second embodiment is due to the threshold distribution of the SONOS type cell. That is, the selected word line WL voltage at the time of reading is set to an intermediate potential Vread between 0 cell and 1 cell. Also, Vpass is higher than the FG example. Other basic operations are the same as in the FG example.

  Reading starts from precharging the bit line BLm. At this time, in the selected block BLOCK0, the selected word line WL014 is applied with the voltage Vpass (for example, 6V), and the non-selected word line WL is also applied with the voltage Vpass. Here, Vpass is a voltage that can be turned on even if the data of the non-selected memory cell is 0. The selection source gates SSG00 to SSG0m are off. In the unselected block BLOCK1, the control word line CWL1 of the selected drain gates SDG10 to SDG1m ((2) in FIG. 17), the selection line SSG1 of the selected source gates SSG10 to SSG1m are all at the voltage Vss, and the word lines WL100 to 131 are all floating. To be. Thereby, all the bit lines BL are charged to about 1V.

  Next, the sensing operation is started. In the sensing operation, a voltage is applied as shown in Table 3 and FIG. Since the selected drain gate SDG1m in the unselected block BLOCK1 is a SONOS type cell, the threshold is higher than that of a normal transistor (0.5V), and is completely turned off when the voltage Vss is applied to the unselected drain gate SDG1m. Can be in a state. For this reason, the leakage current in the non-selected block BLOCK1 at the time of reading can be suppressed.

  In this way, by making the selected drain gate SDG the same SONOS type memory cell as the core, in the SONOS type cell, Vt is as high as about 1 V in the erased state, so that the selected drain gate SDG is previously set as in the second embodiment. There is no need to program to increase Vt. Therefore, the control word line CWL can have the same wiring width as the word line WL without programming the selection drain gate SDG. Therefore, it is not necessary to make a large space between the control word line CWL and the word line WL, and a small area array can be realized. Although the above read operation has been described to be the same as the voltage condition of the second embodiment, in order to further prevent leakage in the non-selected block, the non-selected block at the time of sensing as in the first embodiment. Of course, a back bias may be applied to the selected drain gate.

  According to each of the above embodiments, an accurate read operation can be performed and the circuit scale can be reduced. Note that, under the control of the state machine 57, the high voltage generation circuit 58, the row decoder 59, and the switching circuit 62 apply a back bias to the selection gate in the non-selected memory block at the time of reading. The semiconductor device may be a semiconductor storage device such as a flash memory packaged alone, or may be incorporated as a part of the semiconductor device like a system LSI.

  Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to such specific embodiments, and various modifications and changes can be made within the scope of the gist of the present invention described in the claims. Is possible. In the second and third embodiments, the selected drain gate is configured by a memory cell transistor capable of storing, but the selected source gate may be configured by a memory cell transistor capable of storing. In each of the above embodiments, the NAND flash memory has been described. However, the present invention is not limited to this.

SDG Select drain gate, WL word line, M memory cell.

Claims (2)

A plurality of memory blocks including a plurality of memory cell groups including memory cells connected to a word line and a selection gate for selecting the plurality of memory cell groups;
The selection gate is storable;
A semiconductor device in which the selection gate in a non-selected memory block is programmed at the time of reading. A method for controlling a semiconductor device including a plurality of memory blocks including a plurality of memory cell groups including memory cells connected to a word line and a selection gate for selecting the plurality of memory cell groups,
A method for controlling a semiconductor device, comprising a step of programming the selection gate in a non-selected memory block at the time of reading.

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