JP2011009509A - Electronic apparatus and electrical connection method - Google Patents

Electronic apparatus and electrical connection method Download PDF

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JP2011009509A
JP2011009509A JP2009152213A JP2009152213A JP2011009509A JP 2011009509 A JP2011009509 A JP 2011009509A JP 2009152213 A JP2009152213 A JP 2009152213A JP 2009152213 A JP2009152213 A JP 2009152213A JP 2011009509 A JP2011009509 A JP 2011009509A
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substrate
electronic device
resin core
electrode
connecting member
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JP5215950B2 (en
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Osamu Yamada
收 山田
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Opnext Japan Inc
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Opnext Japan Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Abstract

PROBLEM TO BE SOLVED: To improve connection by reducing a connection failure occurring at a coupling portion which electrically connects two electrodes arranged on different two substrates and opposing each other.SOLUTION: This electronic apparatus includes: a first substrate 3 having a first electrode 50; a second substrate 4 formed on the surface with a second electrode 51 opposite to the first electrode 50; and a coupling member 2 pinched between the first electrode 50 and the second electrode 51 for connecting both the substrates. The coupling member 2 includes: an extended shell or flat extended shell resin core; and a conductive film coating the resin core, and the resin core has an air gap internally.

Description

本発明は電子機器および電気的接続方法に関し、特に、電子部品が搭載された基板と他の基板とを連結部材を用いて接続される電子機器およびその接続方法に関する。   The present invention relates to an electronic device and an electrical connection method, and more particularly to an electronic device in which a substrate on which an electronic component is mounted and another substrate are connected using a connecting member and a connection method thereof.

電子機器/装置の小型化に伴い、電子機器/装置内に電子部品を基板上に実装する場面において、より高密度な実装を行うことが必要とされている。かかる要求に答える高密度実装形態の一例として、BGA(ボールグリッドアレイ)が提案されている。   With the downsizing of electronic devices / devices, it is necessary to perform higher-density mounting in the scene where electronic components are mounted on a substrate in the electronic devices / devices. BGA (Ball Grid Array) has been proposed as an example of a high-density mounting form that meets such requirements.

BGAの実装形態は、予め半導体集積回路が搭載されたインターポーザ(パッケージ基板)の、前記半導体集積回路の搭載面と反対の表面に配設された電極と、前記電極と対向して備えられた実装基板(プリント配線基板)上の電極とを、はんだボールを介して電気的、物理的に接続する形態となっている。BGAにおける高密度実装の実現によって、電子機器/装置の小型化が可能となった。   The mounting form of the BGA includes an interposer (package substrate) on which a semiconductor integrated circuit is previously mounted, an electrode disposed on the surface opposite to the mounting surface of the semiconductor integrated circuit, and a mounting provided facing the electrode. The electrode on the board (printed wiring board) is electrically and physically connected via solder balls. The realization of high-density mounting in BGA has made it possible to reduce the size of electronic devices / devices.

しかしながら上記例の様な高密度実装形態は、実装基板上に半導体集積回路をはじめとする電子部品を高密度実装するという点で有効な方法であるが、はんだボールを介して両基板間を接続する連結部分の信頼性が低下するという課題を有している。   However, the high-density mounting configuration as in the above example is an effective method in terms of high-density mounting of electronic components such as semiconductor integrated circuits on the mounting substrate, but the two substrates are connected via solder balls. It has the subject that the reliability of the connection part to fall falls.

両基板間の連結部分の信頼性の低下は、インターポーザと、実装基板とのそれぞれが持つ熱膨張係数の違いに起因する。電子機器/装置は稼働、停止によって、電子機器/装置内の温度上昇、下降を繰り返し引き起こす。この温度変化がインターポーザおよび実装基板の膨張(伸び)、収縮(縮み)という現象を引き起こし、両基板間を接続する連結部材に負荷をかけ、ひいては接続部分の破断、接続不良を発生させる。   The decrease in the reliability of the connecting portion between both substrates is caused by the difference in thermal expansion coefficient between the interposer and the mounting substrate. The electronic device / device repeatedly causes a temperature rise and fall in the electronic device / device due to operation and stoppage. This temperature change causes a phenomenon of expansion (elongation) and contraction (shrinkage) of the interposer and the mounting substrate, and a load is applied to the connecting member that connects the two substrates, resulting in breakage of the connection portion and poor connection.

例えば、セラミック製のインターポーザの熱膨張係数はおおよそ7ppmである。また、樹脂プリント基板の熱膨張係数はおおよそ14ppmである。パッケージ基板にセラミックインターポーザ、実装基板に樹脂プリント基板をそれぞれ用いられている場合、両基板の熱膨張係数がそれぞれ異なるため、両基板を接続する連結部に大きなせん断力が加わり、接続部分の破断、接続不良を発生させる。   For example, the thermal expansion coefficient of a ceramic interposer is approximately 7 ppm. The thermal expansion coefficient of the resin printed board is approximately 14 ppm. When a ceramic interposer is used for the package substrate and a resin printed circuit board is used for the mounting substrate, the thermal expansion coefficients of the two substrates are different from each other. A poor connection occurs.

近年、BGAに代表されるような実装形態における両基板を接続する連結部材に関して、前記接続不良を解消するために多くの発案がされている。例えば非特許文献1には中実の樹脂コアを利用した樹脂コアBGAが提案されており、BGAパッケージとプリント基板の接続部の温度サイクル寿命が向上できるという提案がされている。また、特許文献1には、導電性接着剤より構成された応力緩和機構体によって連結部材が形成されている応力緩和型電子部品実装体が開示されている。また特許文献2には、外部に開放された中空部を有する円筒形の保持体と、前記保持体の外表面に配設された導電性材料を有する接続端子が開示されている。   In recent years, many proposals have been made on a connecting member for connecting both substrates in a mounting form represented by BGA in order to eliminate the connection failure. For example, Non-Patent Document 1 proposes a resin core BGA using a solid resin core, and proposes that the temperature cycle life of the connection portion between the BGA package and the printed board can be improved. Patent Document 1 discloses a stress relaxation type electronic component mounting body in which a connecting member is formed by a stress relaxation mechanism body made of a conductive adhesive. Further, Patent Document 2 discloses a cylindrical holding body having a hollow portion opened to the outside, and a connection terminal having a conductive material disposed on the outer surface of the holding body.

特許第3262532号公報Japanese Patent No. 3262532 特開2001−118959号公報JP 2001-118959 A

Werner Engelmaier;” Achieving solder joint reliability in a lead-free world, part 2”, Global SMT & Packaging, August 2007,pp.44-46.Werner Engelmaier; ”Achieving solder joint reliability in a lead-free world, part 2”, Global SMT & Packaging, August 2007, pp.44-46.

しかしながら、非特許文献1にて提案されている樹脂コアBGAや、特許文献1にて開示されている、応力緩和機構体が具備された連結部材を有するものは連結部材の剛性が高いため要求されている接続部分における標準的な温度サイクル寿命が得られない。また特許文献2にて開示されている、外部に開放された中空部を有する保持体と、前記保持体の外表面に配設された導電性材料とを具備する接続端子は、保持体の形状が対称性に乏しいために一定方向(外部に開放された中空部の開放面方向)からの負荷に対し効果が小さい。結果、二つの電極を接続する連結部分において発生する接続不良を改善するには至らなかった。   However, the resin core BGA proposed in Non-Patent Document 1 and the one having a connecting member provided with a stress relaxation mechanism disclosed in Patent Document 1 are required because the rigidity of the connecting member is high. The standard temperature cycle life at the connected part cannot be obtained. Moreover, the connection terminal which is disclosed in Patent Document 2 and includes a holding body having a hollow portion opened to the outside and a conductive material disposed on the outer surface of the holding body is a shape of the holding body. However, the effect on the load from a certain direction (the open surface direction of the hollow portion opened to the outside) is small. As a result, it has not been possible to improve the connection failure occurring at the connecting portion connecting the two electrodes.

本発明は上記課題に鑑みてなされたものであって、その目的は、異なった二つの基板上に配設されているお互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良を改善することにある。   The present invention has been made in view of the above problems, and the object thereof is a connection that occurs at a connecting portion that electrically connects two electrodes disposed on two different substrates. It is to improve defects.

上記目的を達成するために、請求項1に記載の発明は、一方の表面に第一の電極が形成されている第一の基板と、前記第一の電極に対向する第二の電極が表面に形成されている第二の基板と、前記第一の電極と前記第二の電極とに挟まれて両基板を接続する連結部材と、を備え、前記連結部材は、内部に空隙が形成された、球状もしくは扁平した球状の樹脂核と、前記樹脂核を覆う導電膜とを含む、ことを特徴とする。   In order to achieve the above object, according to the first aspect of the present invention, there is provided a first substrate having a first electrode formed on one surface and a second electrode facing the first electrode on the surface. And a connecting member that is sandwiched between the first electrode and the second electrode to connect the two substrates, and the connecting member has a gap formed therein. In addition, it includes a spherical or flat spherical resin core and a conductive film covering the resin core.

請求項1に記載の発明によれば、お互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良を改善することができる。   According to the first aspect of the present invention, it is possible to improve a connection failure that occurs in a connecting portion that electrically connects two electrodes facing each other.

請求項2に記載の発明は、請求項1記載の発明において、前記連結部材は、球殻状もしくは扁平した球殻状の中空の樹脂核と、前記樹脂核を覆う導電膜とを含む、ことを特徴とする。   According to a second aspect of the present invention, in the first aspect of the invention, the connecting member includes a spherical or flat spherical shell-shaped hollow resin core and a conductive film that covers the resin core. It is characterized by.

請求項2に記載の発明によれば、異なった二つの基板上に配設されているお互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良をより確実に改善することができる。   According to the second aspect of the present invention, it is possible to more reliably improve a connection failure that occurs at a connecting portion that electrically connects two electrodes disposed on two different substrates and that are opposed to each other. Can do.

請求項3に記載の発明は、請求項1又は2記載の発明において、前記第一の基板および前記第二の基板は、熱膨張率が互いに異なる材料からなることを特徴とし、請求項4に記載の発明は、請求項1乃至3のいずれか一項に記載の発明において、前記第一の基板および前記第二の基板の一方がセラミック製基板で他方が樹脂製基板である、ことを特徴とする。   According to a third aspect of the invention, in the first or second aspect of the invention, the first substrate and the second substrate are made of materials having different coefficients of thermal expansion. The invention described in any one of claims 1 to 3 is characterized in that one of the first substrate and the second substrate is a ceramic substrate and the other is a resin substrate. And

請求項3及び4に記載の発明によれば、前記第一の基板および前記第二の基板に、それぞれ熱膨張率が異なる材料からなる基板を用いた場合においても、異なった二つの基板上に配設されているお互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良を防ぐことができる。   According to invention of Claim 3 and 4, even when the board | substrate which consists of a material with a different thermal expansion coefficient is used for said 1st board | substrate and said 2nd board | substrate, respectively on two different board | substrates. It is possible to prevent a connection failure that occurs at the connecting portion that electrically connects the two electrodes disposed opposite to each other.

請求項5に記載の発明は、請求項2乃至4記載の発明において、前記樹脂核の殻の厚さを前記樹脂核の外径の1/5以下とした、ことを特徴とする。   The invention according to claim 5 is the invention according to any one of claims 2 to 4, wherein the thickness of the shell of the resin core is set to 1/5 or less of the outer diameter of the resin core.

請求項5に記載の発明によれば、異なった二つの基板上に配設されているお互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良をより確実に改善することができる。   According to the fifth aspect of the present invention, it is possible to more reliably improve the connection failure that occurs in the connecting portion that electrically connects the two electrodes disposed on two different substrates and that face each other. Can do.

請求項6に記載の発明は、請求項2乃至5の発明において、前記導電膜の厚さが前記樹脂核の殻の厚さよりも小さい、ことを特徴とする。   According to a sixth aspect of the present invention, in any of the second to fifth aspects of the present invention, the thickness of the conductive film is smaller than the thickness of the shell of the resin core.

請求項6に記載の発明によれば、異なった二つの基板上に配設されているお互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良をより確実に改善することができる。   According to the sixth aspect of the present invention, it is possible to more reliably improve the connection failure that occurs in the connecting portion that electrically connects the two electrodes disposed on the two different substrates. Can do.

請求項7に記載の発明は、請求項1乃至6の発明において、前記導電膜が少なくとも1つの層を備え、前記少なくとも1つの層のうち最外表面層が、ろう材からなる、ことを特徴とする。   According to a seventh aspect of the invention, in the first to sixth aspects of the invention, the conductive film includes at least one layer, and an outermost surface layer of the at least one layer is made of a brazing material. And

請求項7に記載の発明によれば、導電膜の最外表面層が、ろう材からなることによって、異なった二つの基板上に配設されているお互い対置する二つの電極を、連結部材を介して簡便に接続することができる。   According to the seventh aspect of the present invention, the outermost surface layer of the conductive film is made of a brazing material, so that the two electrodes disposed on the two different substrates are connected to each other by the connecting member. Can be easily connected.

請求項8に記載の発明は、請求項2乃至7の発明において、前記連結部材に貫通孔を3個以上備えた、ことを特徴とする。   The invention according to claim 8 is the invention according to claims 2 to 7, wherein the connecting member is provided with three or more through holes.

請求項8に記載の発明によれば、異なった二つの基板上に配設されているお互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良をより確実に改善することができる。   According to the eighth aspect of the present invention, it is possible to more reliably improve a connection failure that occurs in a connecting portion that electrically connects two electrodes disposed on two different substrates and that are opposed to each other. Can do.

請求項9に記載の発明は、一方の表面に第一の電極が形成されている第一の基板と、前記第一の電極に対置した第二の電極が形成されている第二の基板とを、前記第一の電極と前記第二の電極とに挟まれて両基板を接続する連結部材を介して電気的に接続する電気的接続方法において、前記連結部材として、内部に空隙を有する球殻状もしくは扁平した球殻状の樹脂核と、前記樹脂核を覆う導電膜とを含む部材を用いる、ことを特徴とする電気的接続方法である。   The invention according to claim 9 is a first substrate in which a first electrode is formed on one surface, and a second substrate in which a second electrode facing the first electrode is formed, Is electrically connected via a connecting member that is sandwiched between the first electrode and the second electrode and connects both substrates, and the connecting member is a sphere having a gap inside. The electrical connection method is characterized by using a member including a shell-shaped or flat spherical shell-shaped resin core and a conductive film covering the resin core.

請求項9に記載の発明によれば、異なった二つの基板上に配設されているお互い対置する二つの電極を電気的に接続する連結部分において発生する、接続不良を改善可能な電気的接続方法を提供できる。   According to the ninth aspect of the present invention, the electrical connection that can improve the connection failure that occurs in the connecting portion that electrically connects the two electrodes disposed on the two different substrates and that faces each other. Can provide a method.

以上説明したように、本発明によれば、基板間の接続において内部に空隙を有する球殻状の樹脂核と、前記樹脂核を覆う導電膜とを備えた連結部材を具備する事によって、連結部分に発生する接続不良を改善することができる。   As described above, according to the present invention, a connection member including a spherical shell-shaped resin core having a gap in the connection between the substrates and a conductive film covering the resin core is provided. It is possible to improve the connection failure occurring in the portion.

本発明の実施の形態に係る電子機器の一部切断外観斜視図である。It is a partial cut appearance perspective view of an electronic device concerning an embodiment of the invention. 本発明の実施の形態に係る電子機器の実装状態を示した模式断面図であり、図1のII−IIの断面図に相当する。It is a schematic cross section which showed the mounting state of the electronic device which concerns on embodiment of this invention, and is equivalent to the cross section of II-II of FIG. 図2のIII−IIIの断面図である。FIG. 3 is a sectional view taken along line III-III in FIG. 2. 本発明の実施の形態に係る電子機器の実装部分を概略的に示す分解斜視図である。It is a disassembled perspective view which shows roughly the mounting part of the electronic device which concerns on embodiment of this invention. 本発明の実施の形態に係る連結部材の断面図である。It is sectional drawing of the connection member which concerns on embodiment of this invention. 図5の破線部で囲まれたVIを拡大して示す部分断面図である。It is a fragmentary sectional view which expands and shows VI enclosed by the broken-line part of FIG. 本発明の実施の形態の一例に係る接続部分の外観を示す部分拡大図である。It is the elements on larger scale which show the external appearance of the connection part which concerns on an example of embodiment of this invention. 本発明の実施の形態の他の一例に係る接続部分の外観を示す部分拡大図である。It is the elements on larger scale which show the external appearance of the connection part which concerns on another example of embodiment of this invention. 樹脂コアボールの厚みと、連結部材のせん断剛性との関係を表わす理論図である。It is a theoretical figure showing the relationship between the thickness of a resin core ball, and the shear rigidity of a connection member.

以下、本発明の一実施形態について図1、図2、図3、図4に基づき詳細に説明する。   Hereinafter, an embodiment of the present invention will be described in detail based on FIG. 1, FIG. 2, FIG. 3, and FIG.

図1は本実施形態の電子機器1の一部切断外観斜視図である。電子機器1は機器内部に実装基板(第二の基板)4上に実装された半導体パッケージ70を含み、外郭を形成する筐体11によって構成されている。   FIG. 1 is a partially cutaway perspective view of an electronic apparatus 1 according to the present embodiment. The electronic device 1 includes a semiconductor package 70 mounted on a mounting substrate (second substrate) 4 inside the device, and includes a housing 11 that forms an outer shell.

図2は図1のII−IIの断面図に相当し、本発明の実施の形態に係る電子機器1の実装状態を示した模式断面図である。図2は、互いに対面しているインターポーザ(第一の基板)3と実装基板4とを、連結部材2を介して電気的に接続した状態を示している。併せて図2では、インターポーザ3の上面に半導体集積回路5をはんだボール6を介して接続されている状態を模式的に示している。放熱材7は半導体集積回路5の上面に密着して配置されており、電子機器/装置の稼働時における半導体パッケージ70内部から発生する熱を、金属製ハウジング8に伝導させ、半導体パッケージ70外部に放熱する役割を持っている。   FIG. 2 is a schematic cross-sectional view corresponding to the cross-sectional view taken along the line II-II of FIG. FIG. 2 shows a state in which the interposer (first substrate) 3 and the mounting substrate 4 facing each other are electrically connected via the connecting member 2. In addition, FIG. 2 schematically shows a state in which the semiconductor integrated circuit 5 is connected to the upper surface of the interposer 3 via the solder balls 6. The heat dissipating material 7 is disposed in close contact with the upper surface of the semiconductor integrated circuit 5, and heat generated from the inside of the semiconductor package 70 during operation of the electronic device / apparatus is conducted to the metal housing 8 to be outside the semiconductor package 70. Has the role of heat dissipation.

図3はインターポーザ3に接続されている複数の連結部材の配置例を示す図であり、図2のIII−III断面図に相当する。本実施形態では複数の電極50が規則的に配設されたインターポーザ3が用いられている。   FIG. 3 is a view showing an arrangement example of a plurality of connecting members connected to the interposer 3, and corresponds to a cross-sectional view taken along the line III-III in FIG. In the present embodiment, an interposer 3 in which a plurality of electrodes 50 are regularly arranged is used.

図4は本実施形態に係る電子機器1の実装部分を概略的に示す分解斜視図である。図3における、連結部材2の下部に図4で示されている複数の電極50がそれぞれ配設されている。インターポーザ3に備えられたこれら複数電極50と対向して実装基板4にも同数の電極51が配設されている。   FIG. 4 is an exploded perspective view schematically showing a mounting portion of the electronic apparatus 1 according to the present embodiment. In FIG. 3, the plurality of electrodes 50 shown in FIG. The same number of electrodes 51 are disposed on the mounting substrate 4 so as to face the plurality of electrodes 50 provided in the interposer 3.

本発明における電子機器とは、各種電子モジュール、各種電子装置あるいはそれに類するものをいう。   The electronic device in the present invention refers to various electronic modules, various electronic devices, or the like.

本実施形態における本発明の電子機器1は光伝送装置である。図1における電子機器1には、二つの半導体パッケージ70が実装されている。前記半導体パッケージ70の一つは受信ICパッケージであり、もう一方は送信ICパッケージである。光ファイバーケーブル12を介し外部から送信された光信号は、電子機器1内の同軸ケーブル10を介し受信ICに伝送される。受信ICは、伝送された光信号を電気信号に変換し、他の電子機器等に伝送する役割を持っている。送信ICは、他の電子機器から送信された電気信号を光信号に変換して同軸ケーブル10を経由した後、光ファイバーケーブル12を介して外部に送信する役割を持っている。   The electronic device 1 of the present invention in this embodiment is an optical transmission device. Two semiconductor packages 70 are mounted on the electronic device 1 in FIG. One of the semiconductor packages 70 is a receiving IC package, and the other is a transmitting IC package. An optical signal transmitted from the outside via the optical fiber cable 12 is transmitted to the receiving IC via the coaxial cable 10 in the electronic device 1. The receiving IC has a role of converting the transmitted optical signal into an electric signal and transmitting it to another electronic device or the like. The transmission IC has a function of converting an electrical signal transmitted from another electronic device into an optical signal, passing through the coaxial cable 10, and then transmitting the signal to the outside through the optical fiber cable 12.

本実施形態の電子機器1において、40Gbit/sの高周波の電気信号を電子機器1より送信する場合、図2における半導体集積回路5から送られた信号が内部のはんだボール6を介して、インターポーザ3の表面配線(図示せず)上に伝送され、金属製ハウジング8に設置した同軸コネクター(図示せず)から、図1の同軸ケーブル10を介して伝送される。前記同軸コネクターを備えた金属製ハウジング8および前述の40Gbit/s用の半導体集積回路5を搭載するには、インターポーザ3のサイズは約20mm×20mm×厚さ5mmを越える大形なものであることが必要とされる。   In the electronic device 1 of the present embodiment, when a 40 Gbit / s high-frequency electrical signal is transmitted from the electronic device 1, the signal transmitted from the semiconductor integrated circuit 5 in FIG. 1 is transmitted through a coaxial cable 10 shown in FIG. 1 from a coaxial connector (not shown) installed in the metal housing 8. In order to mount the metal housing 8 having the coaxial connector and the semiconductor integrated circuit 5 for 40 Gbit / s described above, the size of the interposer 3 should be larger than about 20 mm × 20 mm × thickness 5 mm. Is needed.

本実施形態ではインターポーザ3としてセラミック製基板が用いられている。また基板のサイズは20mm×20mm×厚さ5mmの物が用いられている。本発明における第一の基板は本実施形態で用いられたセラミック製基板の他に、樹脂製基板、例えばポリイミド基材、ガラスエポキシ基材等の基板も使用用途に応じて適宜使用することが可能である。また基板のサイズも適宜変更することができる。   In the present embodiment, a ceramic substrate is used as the interposer 3. In addition, a substrate having a size of 20 mm × 20 mm × thickness 5 mm is used. As the first substrate in the present invention, in addition to the ceramic substrate used in the present embodiment, a resin substrate, for example, a substrate such as a polyimide base material or a glass epoxy base material can be appropriately used depending on the intended use. It is. Also, the size of the substrate can be changed as appropriate.

本実施形態では実装基板4として樹脂製基板が用いられている。具体的にはガラスエポキシ製のプリント配線基板が用いられている。基板のサイズは電子機器1の外形によって適宜変更し用いることが出来る。本発明における第二の基板は本実施形態で用いられたガラスエポキシ製のプリント配線基板に限らず他の樹脂製基板、例えばベークライト基板、ガラスコンポジット基板、PTFE基板、コンポジット基板、紙エポキシ基板や、セラミック製基板を使用用途に応じて適宜使用することが可能である。   In the present embodiment, a resin substrate is used as the mounting substrate 4. Specifically, a printed wiring board made of glass epoxy is used. The size of the substrate can be appropriately changed and used depending on the outer shape of the electronic device 1. The second substrate in the present invention is not limited to the printed circuit board made of glass epoxy used in the present embodiment, but other resin substrates such as a bakelite substrate, a glass composite substrate, a PTFE substrate, a composite substrate, a paper epoxy substrate, A ceramic substrate can be appropriately used according to the intended use.

第一の基板、第二の基板に熱膨張率が互いに異なる材料からなる基板を組み合わせて使用した場合、両基板の熱膨張係数の差が大きくなり、それに伴うせん断応力の発生により、連結部分において接続不良を発生させる。本実施形態においても、セラミック製基板、樹脂製基板というそれぞれ熱膨張率が互いに異なる材料の基板が用いられている。   When the first and second substrates are used in combination with substrates made of materials with different coefficients of thermal expansion, the difference in the coefficient of thermal expansion between the two substrates increases, and the resulting shear stress causes A poor connection occurs. Also in this embodiment, substrates made of materials having different coefficients of thermal expansion, such as a ceramic substrate and a resin substrate, are used.

上記の場合においても本発明の連結部材2を接続部分に具備することによって、連結部分に発生する接続不良を改善することができる。   Even in the above case, by providing the connecting member 2 of the present invention in the connecting portion, it is possible to improve the connection failure generated in the connecting portion.

図5は、本実施形態の連結部材2の断面図である。図6は、さらに図5の破線部で囲まれたVIを拡大した、連結部材2の構成を示す部分断面図である。   FIG. 5 is a cross-sectional view of the connecting member 2 of the present embodiment. FIG. 6 is a partial cross-sectional view showing the configuration of the connecting member 2 further enlarging the VI surrounded by the broken line in FIG.

本実施形態では連結部材2を構成する樹脂核として、球殻状の中空の樹脂コアボール30が用いられている。樹脂コアボール30は内部に一つの球状の中空部32を備え、且つ殻の厚みが均一に形成されている。また連結部材2は樹脂コアボール30を覆う導電膜を含んでいる。本実施形態では、導電膜に金属膜31が用いられている。   In this embodiment, a hollow shell-shaped resin core ball 30 is used as a resin core constituting the connecting member 2. The resin core ball 30 has one spherical hollow portion 32 therein, and has a uniform shell thickness. The connecting member 2 includes a conductive film that covers the resin core ball 30. In the present embodiment, the metal film 31 is used for the conductive film.

連結部材2の大きな特徴は、熱膨張係数の差に起因する両基板の物理的な伸び(縮み)の差を樹脂コアボール30の変形(歪み)にて負担する点にある。   A major feature of the connecting member 2 is that the difference in physical elongation (shrinkage) between the two substrates due to the difference in thermal expansion coefficient is borne by the deformation (strain) of the resin core ball 30.

樹脂コアボール30は、図3で示すように実装基板4側の法線方向90からみて円形の断面を有する。前記断面形状を有することによって、実装基板4側の法線方向90と垂直に交わる方向のせん断変形に対して連結部材2は、自身を変形方向に追従し歪ませることが可能である。連結部材2の形状の歪みによって、熱膨張差により発生するせん断変形を効果的に負担することが可能となっている。   As shown in FIG. 3, the resin core ball 30 has a circular cross section when viewed from the normal direction 90 on the mounting substrate 4 side. By having the cross-sectional shape, the connecting member 2 can distort itself by following the deformation direction against shear deformation in a direction perpendicular to the normal direction 90 on the mounting substrate 4 side. Due to the distortion of the shape of the connecting member 2, it is possible to effectively bear the shear deformation generated by the difference in thermal expansion.

本発明における連結部材を構成する樹脂核の構造に関しては、樹脂核の中心と、球状の中空部の中心が一致する状態が好ましい。即ち樹脂核の殻の厚みが均一となるように一つの球状の中空部が形成されている構造が連結部材を均一に歪ませるという点で好ましい。   With respect to the structure of the resin core constituting the connecting member in the present invention, it is preferable that the center of the resin core and the center of the spherical hollow portion coincide. That is, a structure in which one spherical hollow portion is formed so that the thickness of the resin core shell is uniform is preferable in that the connecting member is uniformly distorted.

尚、樹脂コアボール30は樹脂の内部に多数の微小な空隙が形成された、球状もしくは扁平した球状の多孔性の樹脂核を用いた場合でも、連結部分の剛性を低下させることが可能である。連結部分の剛性を低下させることは、即ち連結部分に発生する接続不良を効果的に改善することを意味している。   The resin core ball 30 can reduce the rigidity of the connecting portion even when a spherical or flat spherical porous resin core in which a large number of minute voids are formed inside the resin is used. . Decreasing the rigidity of the connecting portion means that the poor connection occurring in the connecting portion is effectively improved.

また、連結部材2を構成する樹脂コアボール30のヤング率は、金属膜31のヤング率よりも低い。樹脂コアボール30を連結部材2に備えることによって連結部材2の剛性は低下し、せん断変形に対し対応することが可能となっている。本発明に用いられる樹脂核の材料は、具体的には、ジビニルベンゼン重合体、ベンゾグアナミン、ポリスチレン、ジビニルベンゼン―スチレン共重合体、ジビニルベンゼン―アクリル酸エステル共重合体、ジアリルフタレート重合体、ポリメタクリル酸メチル、ポリアクリロニトリル、ポリイミド、ポリエチレンテレフタレート、ポリカーボネート等から適時選定をすることが可能である。   Further, the Young's modulus of the resin core ball 30 constituting the connecting member 2 is lower than the Young's modulus of the metal film 31. By providing the connecting core 2 with the resin core ball 30, the rigidity of the connecting member 2 is reduced, and it is possible to cope with shear deformation. Specifically, the material of the resin core used in the present invention is divinylbenzene polymer, benzoguanamine, polystyrene, divinylbenzene-styrene copolymer, divinylbenzene-acrylate copolymer, diallyl phthalate polymer, polymethacrylate. It is possible to make timely selections from methyl acid, polyacrylonitrile, polyimide, polyethylene terephthalate, polycarbonate, and the like.

樹脂コアボール30および連結部材2の外形状は球殻状の他に、扁平した球殻状や、略球殻状の形状も使用することが可能である。すなわち本発明に用いられる樹脂核の外形状は、真球でなくとも球状に類した外形状であれば効果を奏する。   The outer shape of the resin core ball 30 and the connecting member 2 can be a flat spherical shell shape or a substantially spherical shell shape in addition to the spherical shell shape. In other words, the outer shape of the resin core used in the present invention is effective as long as it is not a true sphere but a spherical outer shape.

本実施形態における樹脂コアボール30の外径Dは、電子部品をより高密度な実装を行うという本来の目的より100〜1000μmにて使用されることが好ましい。より好ましくは100〜700μmである。また前記樹脂コアボール30の外表面上に金属膜31が備えられている。図6で示すように、前記金属膜31は樹脂コアボール30側から順番に銅めっき層40、ニッケルめっき層41、ろう材(錫めっき層)42からなる三層構造を有している。   The outer diameter D of the resin core ball 30 in the present embodiment is preferably used at 100 to 1000 μm for the original purpose of mounting electronic components with higher density. More preferably, it is 100-700 micrometers. A metal film 31 is provided on the outer surface of the resin core ball 30. As shown in FIG. 6, the metal film 31 has a three-layer structure including a copper plating layer 40, a nickel plating layer 41, and a brazing material (tin plating layer) 42 in order from the resin core ball 30 side.

本実施形態の一例として、樹脂コアボール外径Dは600μm、図5に示すように、樹脂コアボール30の殻部の厚みは均一に100μm(外径Dの1/6、以下D/6とする)としている。金属膜31を構成する三層構造の一例として、銅めっき層40(10μm)、ニッケルめっき層41(30μm)、ろう材(錫めっき)層42(30μm)と、それぞれの厚みで層を形成している。   As an example of this embodiment, the resin core ball outer diameter D is 600 μm, and as shown in FIG. 5, the thickness of the shell portion of the resin core ball 30 is uniformly 100 μm (1/6 of the outer diameter D, hereinafter referred to as D / 6). To do). As an example of the three-layer structure constituting the metal film 31, a copper plating layer 40 (10 μm), a nickel plating layer 41 (30 μm), a brazing material (tin plating) layer 42 (30 μm) are formed with respective thicknesses. ing.

本実施形態の金属膜31の厚みは70μmである。金属膜31の厚みを、樹脂コアボール30の厚みよりも小さくすることによって、連結部材2のヤング率を低く保つことができ、連結部材2の剛性を効果的に低下させることができる。   The thickness of the metal film 31 of this embodiment is 70 μm. By making the thickness of the metal film 31 smaller than the thickness of the resin core ball 30, the Young's modulus of the connecting member 2 can be kept low, and the rigidity of the connecting member 2 can be effectively reduced.

本実施形態で用いた金属膜31は三層構造であるが、本発明において単層構造、二層構造、あるいは三層以上の多層構造でも実施可能である。   Although the metal film 31 used in this embodiment has a three-layer structure, in the present invention, a single-layer structure, a two-layer structure, or a multilayer structure including three or more layers can also be implemented.

また、銅めっき層40は樹脂コアボール30と密着して形成されている。銅めっき層40は、樹脂コアボール30の表面に導電性金属膜を形成するための下地層としての役割を果たしている。樹脂コアボール30の表面と十分密着するものであれば銅めっき以外の組成物により下地層の役割を果たすことも可能である。また下地層を形成する組成によっては、下地層がろう材層としての機能を兼ねることもできる。この場合、単層構造にて金属膜31が形成されることとなる。   The copper plating layer 40 is formed in close contact with the resin core ball 30. The copper plating layer 40 plays a role as a base layer for forming a conductive metal film on the surface of the resin core ball 30. As long as the surface of the resin core ball 30 is in close contact with the surface of the resin core ball 30, a composition other than copper plating can serve as a base layer. Depending on the composition for forming the underlayer, the underlayer can also function as a brazing material layer. In this case, the metal film 31 is formed with a single layer structure.

本実施例における銅めっき層40は、無電解めっき(化学めっき)法を用いて形成されたが、他の好適な方法を用いてもよい。例えば樹脂コアボール30に導電性樹脂が用いられた場合は電界めっきにより樹脂表面に金属膜31を形成することも可能である。   The copper plating layer 40 in the present embodiment is formed using an electroless plating (chemical plating) method, but other suitable methods may be used. For example, when a conductive resin is used for the resin core ball 30, the metal film 31 can be formed on the resin surface by electroplating.

本実施形態における金属膜31の中間層にニッケルめっき層41が備えられている。併せて最外表面層にはろう材(錫めっき)層42が備えられている。本実施形態では、ろう材(錫めっき)層42を銅めっき層40の表面に直接備えることが困難であった。従って、ろう材(錫めっき)層42と銅めっき層40をバインダーとして繋ぐ役割を持たせる、ニッケルめっき層41が中間層として備えられている。   A nickel plating layer 41 is provided on the intermediate layer of the metal film 31 in the present embodiment. In addition, a brazing material (tin plating) layer 42 is provided on the outermost surface layer. In the present embodiment, it is difficult to directly provide the brazing material (tin plating) layer 42 on the surface of the copper plating layer 40. Therefore, a nickel plating layer 41 is provided as an intermediate layer that serves to connect the brazing material (tin plating) layer 42 and the copper plating layer 40 as a binder.

図7は本実施形態におけるインターポーザ3と実装基板4とを、はんだ52および53を用い連結部材2を介して接続した接続状態を取り出して示した部分拡大図である。図8は本実施形態における他の一例としてインターポーザ3と実装基板4とを、はんだ52および53を用い扁平した球殻状の連結部材20を介して接続したものであり、図7同様、接続状態を取り出して示した部分拡大図である。連結部材20は単軸方向が基板に対し垂直になるように備えられている。連結部材2、20は両基板の表面に配設された一対の電極50、51間に具備されている。図7における両基板間の隙間は連結部材2の外径と略一致している。   FIG. 7 is a partial enlarged view showing a connection state in which the interposer 3 and the mounting substrate 4 in this embodiment are connected via the connecting member 2 using the solders 52 and 53. FIG. 8 shows another example of the present embodiment in which the interposer 3 and the mounting substrate 4 are connected to each other through a flat spherical shell-shaped connecting member 20 using solders 52 and 53. As in FIG. It is the elements on larger scale which took out and showed. The connecting member 20 is provided so that the uniaxial direction is perpendicular to the substrate. The connecting members 2 and 20 are provided between a pair of electrodes 50 and 51 disposed on the surfaces of both substrates. The gap between the two substrates in FIG. 7 is substantially the same as the outer diameter of the connecting member 2.

図4を用いて本実施形態の電気的接続方法を説明する。半導体集積回路5がインターポーザ3にはんだボール6を介して実装される第一の工程と、放熱材7が半導体集積回路5の上面に配設され、金属製ハウジング8を半導体集積回路5および放熱材7を内包するようにインターポーザ3上面に装着される第二の工程と、次いでインターポーザ3の下面に規則正しく配設された複数の電極50のそれぞれに、連結部材2がはんだ52を介してろう接される第三の工程を経て半導体パッケージ70が得られる。次いで半導体パッケージ70はリフロー方式によって、実装基板4に実装される。実装基板4上に配設された複数の電極51に、はんだ53がそれぞれ印刷塗布される第四の工程と、前記半導体パッケージ70が実装基板4上の所定位置に合わされた後、加熱しはんだ53と連結部材2が接続される第五の工程とで本実施形態の電気的接続方法が構成されている。   The electrical connection method of this embodiment is demonstrated using FIG. A first step in which the semiconductor integrated circuit 5 is mounted on the interposer 3 via the solder balls 6, a heat dissipation material 7 is disposed on the upper surface of the semiconductor integrated circuit 5, and the metal housing 8 is connected to the semiconductor integrated circuit 5 and the heat dissipation material. The connecting member 2 is soldered to each of a plurality of electrodes 50 regularly arranged on the lower surface of the interposer 3 and the second step of mounting on the upper surface of the interposer 3 so as to enclose 7. The semiconductor package 70 is obtained through the third step. Next, the semiconductor package 70 is mounted on the mounting substrate 4 by a reflow method. A fourth step in which solder 53 is printed and applied to each of the plurality of electrodes 51 disposed on the mounting substrate 4, and after the semiconductor package 70 is aligned with a predetermined position on the mounting substrate 4, the solder 53 is heated and heated. And the fifth step in which the connecting member 2 is connected constitutes the electrical connection method of the present embodiment.

図9は本発明における樹脂核に中空の球殻状の樹脂コアボールを用いた際の、前記樹脂コアボールの厚さと、連結部材のせん断剛性の関係を表わす理論図である。縦軸は中実の樹脂コアボールを用いた場合におけるせん断剛性の実測値に対する比を、横軸は樹脂コアボールの殻の厚さを表わしている。樹脂コアボール30(D/6)を連結部材2に具備した電子機器1の接続部のせん断剛性は、内部に空隙を持たない中実の樹脂コアボールを用いたときに比べて約1/20に低下させることが出来たことを図9は示している。   FIG. 9 is a theoretical diagram showing the relationship between the thickness of the resin core ball and the shear rigidity of the connecting member when a hollow spherical shell resin core ball is used as the resin core in the present invention. The vertical axis represents the ratio of the shear rigidity to the measured value when a solid resin core ball is used, and the horizontal axis represents the thickness of the shell of the resin core ball. The shear rigidity of the connecting portion of the electronic device 1 having the resin core ball 30 (D / 6) in the connecting member 2 is about 1/20 as compared with the case where a solid resin core ball having no voids is used. FIG. 9 shows that it was able to be lowered.

次いで−40/85℃の温度サイクル試験を実施した。樹脂核の内部に空隙を持たない中実の樹脂コアボールを用いた電子機器の温度サイクル試験結果は、約100回の温度サイクルで接続部の破断が発生、という結果であった。それに対し、本実施形態の電子機器1を用いた温度サイクル試験においては500回の温度サイクルを行っても接続部分の破断を発生しないという結果が得られた。   Next, a temperature cycle test of −40 / 85 ° C. was performed. The result of a temperature cycle test of an electronic device using a solid resin core ball having no voids inside the resin core was that the connection part was broken in about 100 temperature cycles. On the other hand, in the temperature cycle test using the electronic apparatus 1 of the present embodiment, a result that the connection portion was not broken even when the temperature cycle was performed 500 times was obtained.

上述の結果は、本実施形態の電子機器1の接続部分の破断寿命は従来のものと比較して5倍以上の寿命が得られる、ということを示している。本実施形態の電子機器1に関し、温度サイクル試験後のはんだ接続部の状態を観察したところ、接続部分のはんだへのクラック発生はほとんど無かった。このことは、本実施形態の電子機器1は連結部分において発生する接続不良を改善されているものであることを意味している。   The above-described results indicate that the fracture life of the connection portion of the electronic device 1 of the present embodiment is 5 times longer than that of the conventional one. Regarding the electronic device 1 of the present embodiment, when the state of the solder connection part after the temperature cycle test was observed, there was almost no cracking in the solder of the connection part. This means that the electronic device 1 of the present embodiment is improved in connection failure that occurs in the connecting portion.

なお、本発明の実施形態では、図6の最外層にろう材(錫めっき)層42を形成した場合を示したが、ろう材(錫めっき)層42は本実施形態で用いたはんだ52,53との濡れ性を確保する機能を持っている。ろう材(錫めっき)層42の代わりとして、例えば金めっき層であっても本発明の機能が阻害されるものではない。金めっきを用いた場合の金めっき層の厚さはおおよそ50μm程度が経済的見地からみても妥当な厚みである。   In the embodiment of the present invention, the case where the brazing material (tin plating) layer 42 is formed in the outermost layer of FIG. 6 is shown. However, the brazing material (tin plating) layer 42 is composed of the solder 52, 53 has the function of ensuring wettability with 53. As an alternative to the brazing material (tin plating) layer 42, for example, a gold plating layer does not impede the function of the present invention. When the gold plating is used, the thickness of the gold plating layer is about 50 μm, which is an appropriate thickness from an economic viewpoint.

また、本発明の前述の実施形態において、さらに接続部の温度サイクル寿命を向上させる手段として、連結部材2に開口部を設け、さらにせん断剛性を低下させる手段がある。この場合、連結部材2は開口部を3個以上、球体の球面上に略均等に分散して備えることが好ましい。   Further, in the above-described embodiment of the present invention, as a means for further improving the temperature cycle life of the connecting portion, there is a means for providing an opening in the connecting member 2 and further reducing the shear rigidity. In this case, it is preferable that the connecting member 2 has three or more openings and are distributed substantially evenly on the spherical surface of the sphere.

具体的には、連結部材2に直径が約15μmの円形の貫通孔(開口部)を連結部材2の球面上に均等に分散して3か所設けたところ、接続部の温度サイクル寿命がさらに2倍以上向上した結果が得られた。   Specifically, when the connecting member 2 is provided with three circular through holes (openings) having a diameter of about 15 μm evenly distributed on the spherical surface of the connecting member 2, the temperature cycle life of the connecting portion is further increased. A result of an improvement of more than 2 times was obtained.

なお、本実施形態で用いられたセラミック製のインターポーザ3と、半導体集積回路5の合計重量は約10gと大きい。また本発明の電子機器が通信装置として使用される際には、衝撃加速度500Gの試験を課されるものもあり、この時の連結部材に加わる力は概略5kgになる。樹脂核に中空の球殻状の物を用いた場合、前述のような過酷な状況下に耐えうる樹脂核の殻の厚さの設定が必要になる。   The total weight of the ceramic interposer 3 and the semiconductor integrated circuit 5 used in this embodiment is as large as about 10 g. Further, when the electronic apparatus of the present invention is used as a communication device, there is a test subject to an impact acceleration of 500G, and the force applied to the connecting member at this time is approximately 5 kg. When a hollow spherical shell is used for the resin core, it is necessary to set the thickness of the resin core shell that can withstand the severe conditions described above.

連結部分の剛性を適切に担保する目的で、樹脂核の殻の厚さを前記樹脂核の外径の1/10以上とすることが望ましい。   For the purpose of appropriately securing the rigidity of the connecting portion, it is desirable that the thickness of the resin core shell is 1/10 or more of the outer diameter of the resin core.

本発明における樹脂核の殻の厚さは、前記樹脂核の外径の1/2〜1/10、より好ましくは1/5〜1/10とすることが好ましい。   The thickness of the resin core shell in the present invention is preferably 1/2 to 1/10, more preferably 1/5 to 1/10, of the outer diameter of the resin core.

要求される樹脂核の殻の厚さのサイズは、本発明の電子機器の用途に応じて異なる。よって、用途に応じた樹脂核の殻の厚さの設計は適宜必要になる。すなわち用途によって、上記樹脂核の殻の厚さ以外の範囲においても本発明の効果を満たすことが可能である。   The required size of the thickness of the resin core shell varies depending on the application of the electronic device of the present invention. Therefore, it is necessary to appropriately design the thickness of the resin core shell according to the application. That is, it is possible to satisfy the effects of the present invention in a range other than the thickness of the resin core shell, depending on the application.

本実施形態ではBGA接続を用いたが、本発明はBGA接続方法に限定されるものではない。所謂CSP(チップサイズパッケージ)における技術分野にて幅広く利用が可能である。   Although the BGA connection is used in this embodiment, the present invention is not limited to the BGA connection method. It can be widely used in the technical field of so-called CSP (chip size package).

加えて、従来の実装方法におけるインターポーザと実装基板の隙間に封止樹脂(アンダーフィル剤)を施工して、連結部材に係る応力の緩和、半導体パッケージ70の脱落防止の補強として用いることは本発明においては必要がないが、アンダーフィル剤を併用することも無論問題ない。   In addition, the sealing resin (underfill agent) is applied in the gap between the interposer and the mounting substrate in the conventional mounting method, and is used as a reinforcement for relaxing stress on the connecting member and preventing the semiconductor package 70 from falling off. However, there is no problem to use an underfill agent in combination.

1 電子機器、2,20 連結部材、3 インターポーザ、4 実装基板、5 半導体集積回路、6 はんだボール、7 放熱材、8 金属製ハウジング、10 同軸ケーブル、11 筐体、12 光ファイバーケーブル、30 樹脂コアボール、31 金属膜、32 中空部、40 銅めっき層、41 ニッケルめっき層、42 ろう材(すずめっき)層、50,51 電極、52,53 はんだ、70 半導体パッケージ、80 樹脂コアボールの厚みとせん断剛性の関係を示す特性曲線、90 法線方向。   DESCRIPTION OF SYMBOLS 1 Electronic device, 2,20 Connecting member, 3 Interposer, 4 Mounting board, 5 Semiconductor integrated circuit, 6 Solder ball, 7 Heat dissipation material, 8 Metal housing, 10 Coaxial cable, 11 Case, 12 Optical fiber cable, 30 Resin core Ball, 31 Metal film, 32 Hollow part, 40 Copper plating layer, 41 Nickel plating layer, 42 Brazing material (tin plating) layer, 50, 51 Electrode, 52, 53 Solder, 70 Semiconductor package, 80 Thickness of resin core ball Characteristic curve showing the relationship of shear stiffness, 90 normal direction.

Claims (9)

一方の表面に第一の電極が形成されている第一の基板と、
前記第一の電極に対向する第二の電極が表面に形成されている第二の基板と、
前記第一の電極と前記第二の電極とに挟まれて両基板を接続する連結部材と、を備え、
前記連結部材は、内部に空隙が形成された、球状もしくは扁平した球状の樹脂核と、前記樹脂核を覆う導電膜とを含む、
ことを特徴とする電子機器。
A first substrate having a first electrode formed on one surface;
A second substrate having a second electrode facing the first electrode formed on the surface;
A connecting member that is sandwiched between the first electrode and the second electrode to connect the two substrates; and
The connecting member includes a spherical or flat spherical resin core having a void formed therein, and a conductive film covering the resin core.
An electronic device characterized by that.
前記連結部材は、球殻状もしくは扁平した球殻状の中空の樹脂核と、
前記樹脂核を覆う導電膜とを含む、
ことを特徴とする請求項1に記載の電子機器。
The connecting member is a spherical resin shell having a spherical shell shape or a flat spherical shell shape, and
Including a conductive film covering the resin core,
The electronic device according to claim 1.
前記第一の基板および前記第二の基板は、熱膨張率が互いに異なる材料からなる、
ことを特徴とする請求項1又は2に記載の電子機器。
The first substrate and the second substrate are made of materials having different coefficients of thermal expansion.
The electronic device according to claim 1, wherein the electronic device is an electronic device.
前記第一の基板および前記第二の基板の一方がセラミック製基板で、
他方が樹脂製基板である、
ことを特徴とする請求項1乃至3のいずれか一項に記載の電子機器。
One of the first substrate and the second substrate is a ceramic substrate,
The other is a resin substrate,
The electronic apparatus according to claim 1, wherein the electronic apparatus is an electronic apparatus.
前記樹脂核の殻の厚さを前記樹脂核の外径の1/5以下とした、
ことを特徴とする請求項2乃至4のいずれか一項に記載の電子機器。
The thickness of the resin core shell is 1/5 or less of the outer diameter of the resin core,
The electronic device according to claim 2, wherein the electronic device is an electronic device.
前記導電膜の厚さが前記樹脂核の殻の厚さよりも小さい、
ことを特徴とする請求項2乃至5のいずれか一項に記載の電子機器。
The thickness of the conductive film is smaller than the thickness of the resin core shell,
The electronic device according to claim 2, wherein the electronic device is an electronic device.
前記導電膜が少なくとも1つの層を備え、前記少なくとも1つの層のうち最外表面層が、ろう材からなる、
ことを特徴とする請求項1乃至6のいずれか一項に記載の電子機器。
The conductive film includes at least one layer, and an outermost surface layer of the at least one layer is made of a brazing material.
The electronic device according to any one of claims 1 to 6, wherein
前記連結部材に貫通孔を3個以上備えた、
ことを特徴とする請求項2乃至7のいずれか一項に記載の電子機器。
The connecting member has three or more through holes,
The electronic device according to claim 2, wherein the electronic device is an electronic device.
一方の表面に第一の電極が形成されている第一の基板と、
前記第一の電極に対置した第二の電極が形成されている第二の基板とを、
前記第一の電極と前記第二の電極とに挟まれて両基板を接続する連結部材を介して電気的に接続する電気的接続方法において、
前記連結部材として、内部に空隙を有する球殻状もしくは扁平した球殻状の樹脂核と、
前記樹脂核を覆う導電膜とを含む部材を用いることを特徴とする電気的接続方法。
A first substrate having a first electrode formed on one surface;
A second substrate on which a second electrode facing the first electrode is formed,
In the electrical connection method in which the first electrode and the second electrode are sandwiched between the two electrodes and electrically connected via a connecting member that connects both substrates,
As the connecting member, a spherical shell-shaped or flat spherical shell-shaped resin core having a void inside, and
An electrical connection method using a member including a conductive film covering the resin nucleus.
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JPS6391903A (en) * 1986-10-06 1988-04-22 日立化成工業株式会社 Conducting particle
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