JP2011007597A - Board for probe card constituting probe card, laminate for probe card, and probe card using laminate for probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a board for a probe card constituting a probe card and a laminate for a probe card which accurately detects the predetermined position of a wafer and accurately inspects electric characteristics through electrode pads arranged on a semiconductor device such as a highly integrated LSI chip, a probe card having the laminate for a probe card and a probe, and a semiconductor wafer inspection apparatus using the probe card.SOLUTION: The board for the probe card 1 is formed of composite ceramics having a compound including alumina and mullite as a main component and includes a coloring agent having at least one of chromium oxide, cobalt oxide, manganese oxide, and iron oxide as a main component. It is set so that its thermal expansion coefficient has a small difference with that of the semiconductor wafer, and it reduces the reflection of light from the surface of the board as compared to a white board, thereby allowing positioning with respect to the electrode pads to be performed accurately.

Description

  The present invention relates to a probe card substrate constituting a probe card used for inspecting a circuit formed on a semiconductor wafer, and a probe card laminate in which a plurality of these are stacked. Furthermore, the present invention relates to a probe card using the probe card laminate and a semiconductor wafer inspection apparatus using the probe card.

  Inspection of circuits formed on semiconductor wafers used in CPUs (Central Processing Units), MPUs (Micro Processor Units), flash memories, etc. Done with.

  FIG. 4 is a cross-sectional view showing a conventional probe card.

  The probe card shown in FIG. 4 includes a printed circuit board 300 made of a glass epoxy resin on which a wiring pattern 310 is formed, and a probe 100 attached to the printed circuit board 300. A holding member 240 made of ceramics is attached to the lower surface side of the printed circuit board 300, and a probe 100 for measuring the electrical characteristics of the silicon wafer 600 is held on an inclined surface 241 formed inside the holding member 240. . The tip of the probe 100 is bent downward and is positioned so as to correspond to an electrode pad 611 of an LSI (Large Scale Integration) chip 610 that divides the silicon wafer 600.

  A through hole 210 is formed inside the printed circuit board 300, and the probe 100 and the connector terminal 320 are connected to each other through a wiring pattern 310 formed inside the through hole 210 and on the surface of the printed circuit board 300. The silicon wafer 600 is placed on a vacuum chuck 700 in which a heater 710 is incorporated so that the LSI chip 610 can be inspected even at high temperatures.

  However, in such a probe card, the printed circuit board 300 is likely to expand due to radiant heat from the vacuum chuck 700, and as a result, the contact portion of the probe 100 is displaced with respect to the electrode pad 611, making accurate inspection difficult. In order to solve such a problem, for example, in Patent Document 1, a probe for high-temperature measurement in which the contact portion of the probe 100 is less likely to be displaced from the electrode pad 611 due to radiant heat from the vacuum chuck. A card has been proposed.

  FIG. 5 is a cross-sectional view showing a high-temperature measurement probe card proposed in Patent Document 1. As shown in FIG.

  The high-temperature measurement probe card shown in FIG. 5 is a high-temperature measurement probe card that measures various electrical characteristics while heating the LSI chip 610 that is the object to be measured, and is in contact with the electrode pads 611 of the LSI chip 610. A probe 100 and a substrate 400 to which the probe 100 is attached are provided. The substrate 400 is a laminate of a plurality of ceramic plates 410. The probe 100, the LSI chip 610, the electrode pad 611, and the like are the same as those described with reference to FIG.

  FIG. 6 is a perspective view of a ceramic plate constituting a substrate used in the probe card for high temperature measurement proposed in Patent Document 1.

  The ceramic plate 410 shown in FIG. 6 is an alumina green sheet having a thickness of 0.3 mm, has a rectangular opening 411 at the center, and has a wiring pattern 412 made of a thick film of silver palladium on both sides thereof. ing. Further, the ceramic plate 410 is formed with a through hole 413, a via hole or the like which is a connection means considering the connection with the wiring pattern 412 of the other ceramic plate 410 to be laminated.

  As shown in FIG. 5 and FIG. 6, in Patent Document 1, in a high-temperature measurement probe card that measures electrical characteristics in a state where the measurement object is heated, the electrode pad 611 of the measurement object is contacted. It has been proposed that a probe 100 and a substrate 400 to which the probe 100 is attached are provided, and the substrate 400 is a laminate of a plurality of ceramic plates 410. According to this, the thermal expansion coefficient of the substrate 400 made of ceramics is closer to that of the single crystal silicon wafer constituting the LSI chip 610, which is the measurement object, than the conventional printed circuit board 300 made of glass epoxy resin. The displacement of the contact portion of the probe 100 with respect to the electrode pad 611 due to the thermal expansion of the substrate 400 can be reduced.

JP-A-9-54116

However, in the probe card for high temperature measurement proposed in Patent Document 1, the thermal expansion coefficient of the substrate 400 made of ceramics is higher than that of the conventional printed circuit board 300 made of glass epoxy resin. Since it is close to the single crystal silicon wafer constituting the substrate, the displacement of the contact portion of the probe 100 with respect to the electrode pad 611 due to the thermal expansion of the substrate 400 can be reduced, but the ceramic plate 410 constituting the substrate 400 is made of alumina ceramics. If so, the thermal expansion coefficient is about 6.0 × 10 ⁻⁶ / ° C., which is small but different from the thermal expansion coefficient of single crystal silicon (about 4.2 × 10 ⁻⁶ / ° C.). The shift due to the thermal expansion of 400 cannot be eliminated, and today, with higher integration, the shift of the contact portion of the probe 100 with respect to the electrode pad 611 is further reduced. Kusuru it has been required.

In addition, since the substrate 400 on which the ceramic plate 410 made of alumina ceramics is laminated has a white surface, a part of the light beam is reflected from the substrate 400 when irradiated with a light beam for wafer position detection. However, there is a problem that it becomes difficult for an auto-alignment means for automatically detecting a predetermined position of the wafer to accurately detect the position of the wafer (see Japanese Patent Laid-Open No. 9-43858).

  The present invention has been devised to solve the above-described problems, and can accurately detect a predetermined position of a wafer and can be arranged on a semiconductor element such as an LSI chip that has been highly integrated. Probe card substrate and probe card laminate constituting a probe card capable of accurately inspecting the electrical characteristics of the pad, probe card using the probe card laminate and probe, and semiconductor wafer inspection using the probe card The object is to provide an apparatus.

  The probe card substrate of the present invention comprises a composite ceramic mainly composed of a compound composed of alumina and mullite, and contains a colorant mainly composed of at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide. It is characterized by being.

  The probe card substrate of the present invention is characterized in that, in the above configuration, the colorant is mainly composed of chromium oxide.

  The probe card substrate of the present invention is characterized in that, in the above configuration, the colorant is composed mainly of cobalt oxide and has a content of 1% by mass to 2.5% by mass. .

  The probe card substrate according to the present invention is characterized in that, in any of the above-described configurations, the content of the alumina in the compound is 20% by mass or more and 70% by mass or less.

  The laminated body for a probe card of the present invention is a laminated body for a probe card in which a plurality of probe card substrates having any one of the above configurations are stacked, and is fixed to a plate-like support member, and is a semiconductor wafer. The probe card substrate disposed on the support member side has a higher content of the alumina in the compound than the probe card substrate disposed on the side.

  In the probe card laminate of the present invention, the support member is formed of a resin, and the probe card laminate of the above configuration is for the second probe card made of another composite ceramic on the support member side. The other composite ceramic is provided with a substrate, the main component is a compound composed of alumina and zirconia, and the content of the alumina in the compound is 9% by mass or more and 41% by mass or less, and chromium oxide, cobalt oxide, oxidation It contains a colorant mainly composed of at least one of manganese and iron oxide.

  The laminate for a probe card according to the present invention is characterized in that, in the above configuration, the colorant is composed mainly of chromium oxide.

  The laminate for a probe card of the present invention is characterized in that, in the above configuration, the colorant has a main component of cobalt oxide and a content of 1% by mass to 2.5% by mass. is there.

  The probe card of the present invention is characterized by comprising the probe card laminate having any one of the above-described structures and a probe.

  The semiconductor wafer inspection apparatus of the present invention is characterized by using the probe card having the above-described configuration.

  According to the probe card substrate of the present invention, a colorant comprising a composite ceramic mainly comprising a compound comprising alumina and mullite and comprising at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide as a main component. Therefore, the surface of the probe card substrate can be colored in a color in which the light beam is less likely to be reflected than white, for example, black, gray, or chromatic color. In addition, since the light reflected on the surface of the probe card substrate can be reduced, an auto-alignment means for automatically detecting a predetermined position of the semiconductor wafer is used when the probe card substrate is used. The predetermined position can be accurately detected. In addition, by adjusting the contents of alumina and mullite, the difference between the thermal expansion coefficient of the probe card substrate and the thermal expansion coefficient of the semiconductor wafer can be set to be small.

  In addition, according to the probe card substrate of the present invention, when the colorant is mainly composed of chromium oxide, the surface can be made dark, such as purple, so that it absorbs laser light better than white, When cutting the probe card substrate using laser light in the manufacturing process, the cutting can be facilitated.

  Further, according to the probe card substrate of the present invention, when the colorant is composed mainly of cobalt oxide and the content is 1% by mass or more and 2.5% by mass or less, the surface is covered with a slight amount of colorant. Since the color can be changed from blue to dark, such as black, the insulation is less likely to deteriorate than when the surface is colored with a large amount of colorant, and the reliability with respect to the insulation is less likely to be impaired.

  Further, according to the probe card substrate of the present invention, when the content of alumina in the compound is 20% by mass or more and 70% by mass or less, the heat of silicon (Si) that is most frequently used as the material of the semiconductor wafer. Since the difference from the expansion coefficient can be set small, especially when the semiconductor wafer is made of silicon, it is possible to reduce the occurrence of misalignment between the probe and the electrode pad in the inspection at a high temperature. Can do.

  Further, according to the probe card laminate of the present invention, it is a probe card laminate in which a plurality of probe card substrates of the present invention are stacked, and is fixed to a plate-like support member, and also on the semiconductor wafer side. Since the probe card substrate disposed on the support member side has a higher alumina content in the compound than the probe card substrate disposed on the substrate, the difference in thermal expansion coefficient between the support member and the semiconductor wafer is small. Since the thermal expansion coefficient of the probe card laminate increases from the semiconductor wafer side to the support member side, it is possible to reduce the occurrence of displacement between the probe and the electrode pad in the inspection at a high temperature.

  According to the probe card laminate of the present invention, the support member is formed of resin, and the probe card laminate includes the second probe card substrate made of another composite ceramic on the support member side. The other composite ceramics are mainly composed of a compound composed of alumina and zirconia, and the content of alumina in this compound is 9% by mass or more and 41% by mass or less, and at least chromium oxide, cobalt oxide, manganese oxide and iron oxide When a colorant containing one kind as a main component is included, the surface can be colored in a color that the light beam is difficult to reflect, such as black, gray, or chromatic color. However, since the light reflected on the surface of the probe card substrate can be reduced, the semiconductor Automatic alignment means for automatically detecting a predetermined position of the wafer can be accurately detecting a predetermined position of the semiconductor wafer. In addition, since the thermal expansion coefficient of the second probe card substrate can be brought close to the thermal expansion coefficient of the support member, it is possible to appropriately cope with the temperature gradient generated between the semiconductor wafer and the support member, and the rigidity is improved. Therefore, the positioning with respect to the electrode pad can be performed accurately even in the inspection at a high temperature.

  Further, according to the laminate for a probe card of the present invention, when the main component is chromium oxide, the surface can be darkened such as purple, so that, for example, confidentiality is required for the internal wiring pattern. In some cases, the pattern can be made difficult to see from the outside, and the laser beam is absorbed better than white, so when cutting the probe card laminate using the laser beam in its manufacturing process, the cutting Can be made easier.

  Further, according to the laminate for a probe card of the present invention, when the colorant is mainly composed of cobalt oxide and the content is 1% by mass or more and 2.5% by mass or less, the surface is covered with a slight amount of colorant. Since it can be made dark, the insulation is less likely to be lower than when the surface is colored with a large amount of colorant, and the reliability is less likely to be impaired.

  Further, according to the probe card of the present invention, since the probe card laminate of the present invention and the probe are provided, the displacement between the electrode pad and the probe is less likely to occur during inspection at a high temperature. Therefore, the electrical characteristics can be accurately inspected.

  Moreover, according to the semiconductor wafer inspection apparatus of the present invention, since the probe card of the present invention is used, an excellent semiconductor wafer apparatus with high inspection efficiency can be obtained.

It is a top view which shows an example of embodiment of the board | substrate for probe cards of this invention. It is sectional drawing which shows an example of embodiment of the semiconductor wafer inspection apparatus using the probe card of this invention. It is sectional drawing which shows the other example of embodiment of the semiconductor wafer inspection apparatus using the probe card of this invention. It is sectional drawing which shows the conventional probe card. It is sectional drawing which shows the conventional probe card for high temperature measurement. It is a perspective view of the ceramic board which comprises the board | substrate used for the conventional probe card for high temperature measurement.

  Hereinafter, a probe card substrate and a probe card laminate of the present invention constituting a probe card used for inspecting a circuit formed on a semiconductor wafer, a probe card using the probe card laminate, and this probe card An example of an embodiment of the used semiconductor wafer inspection apparatus will be described.

  FIG. 1 is a plan view showing an example of an embodiment of a probe card substrate according to the present invention.

  The probe card substrate 1 has a disk shape, and an attachment hole 2 through which a fixing member (not shown) such as a pin for fixing to the support member passes, and a position of the attachment hole 2 are arranged on the outer peripheral side. A through hole 3 for inserting a probe used for inspection of electrical characteristics of the electrode pad of the semiconductor element is provided on the inner side. In this example, the probe card substrate 1 whose outer shape is a disk shape is shown. However, the shape can be changed as appropriate, such as a square plate shape, according to the position of the electrode pad arranged in the semiconductor element. is there. Further, the arrangement and size of the mounting hole 2 and the through hole 3 can be appropriately changed according to the fixing location and the position of the electrode pad arranged in the semiconductor element.

  The probe card substrate 1 of the present invention comprises a composite ceramic mainly composed of a compound comprising alumina and mullite, and is a colorant mainly comprising at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide. It is important to include. By adjusting the contents of alumina and mullite, the difference between the thermal expansion coefficient of the probe card substrate 1 and the thermal expansion coefficient of the semiconductor wafer can be reduced regardless of the material of the semiconductor wafer. In addition, since the surface of the probe card substrate 1 can be colored in a color in which the light beam is less likely to be reflected than white, for example, black, gray, or chromatic color, even if the semiconductor wafer is irradiated with the light beam, Since a part of the light beam is reflected from the semiconductor wafer and the light beam reflected from the surface of the probe card can be reduced, a predetermined position of the semiconductor wafer is obtained when the probe card substrate 1 is used. The automatic alignment means for automatically detecting the can detect the predetermined position of the semiconductor wafer accurately.

Examples of the material of the semiconductor wafer include silicon (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC), and the like. −40 to +150 each coefficient of thermal expansion ℃, respectively ^{4.2 × 10 -6 /℃,6.1×10 -6 /℃,4.7×10 -6} /℃,5.7×10 -6 /℃,4.5×10 -6 /℃,4.2 It is not less than × 10 ⁻⁶ / ° C. and not more than 4.7 × 10 ⁻⁶ / ° C. On the other hand, the thermal expansion coefficient at −40 to + 150 ° C. of the composite ceramics mainly composed of the compound composed of alumina and mullite constituting the probe card substrate 1 of the present invention is adjusted by adjusting the contents of alumina and mullite. , 3.3 × 10 ⁻⁶ or more and 6.0 × 10 ⁻⁶ / ° C. or less, the thermal expansion coefficient and the semiconductor of the probe card substrate 1 of the present invention can be set to any semiconductor wafer. The difference from the thermal expansion coefficient of the wafer can be reduced.

And the alumina and mullite which are the main components of the composite ceramics which are the board | substrate 1 for probe cards of this invention can be identified using a X ray diffraction method. Moreover, what is necessary is just to obtain | require as follows about each content. The specific composition of the alumina is _Al 2 _{O 3,} because the composition of the mullite is _{3Al 2 O} 3 · 2SiO 2, X-ray fluorescence analysis of each content of Al and Si in the composite ceramic or ICP ( Inductively Coupled Plasma (inductively coupled plasma). And if each content is converted into Al ₂ O ₃ and SiO ₂ which are oxides respectively, and the content of Al ₂ O _{3 in} mullite is calculated from the content of SiO ₂ , the total value is mullite. becomes content value obtained by subtracting the content of Al ₂ O ₃ in the mullite from the content of the entire Al ₂ O ₃ it becomes the alumina content.

Moreover, chromium oxide, cobalt oxide, manganese oxide, and iron oxide, which are colorants contained in the probe card substrate 1 of the present invention, can be identified using an X-ray diffraction method. These chromium oxide _{(Cr 2 O} 3), cobalt oxide (CoO), for the amount of manganese oxide (MnO) and iron oxide _(Fe 2 _{O 3),} respectively chromium (Cr), cobalt (Co), manganese The respective contents of (Mn) and iron (Fe) are determined by fluorescent X-ray analysis or ICP emission analysis, and these contents are respectively determined by chromium oxide (Cr ₂ O ₃ ), cobalt oxide (CoO), and manganese oxide ( It can be determined by converting to MnO) and iron oxide (Fe ₂ O ₃ ).

All of these colorants differ in color tone exhibited by the composite ceramics depending on their content. Chromium oxide (Cr ₂ O ₃ ) exhibits a pink color when the content is small, and dark purple when the content is large. Further, cobalt oxide (CoO) exhibits blue when the content is small, and black when the content is large. Further, manganese oxide (MnO) and iron oxide (Fe ₂ O ₃ ) both exhibit yellow when the content is small and brown when the content is large.

More specifically, chromium oxide (Cr ₂ O ₃ ) has a pink color when the content in the composite ceramic is, for example, from 0.1% by mass to less than 0.5% by mass, and from 0.5% by mass to less than 3% by mass. If red is 3% by mass or more and 5% by mass or less, dark purple is exhibited.

  Cobalt oxide (CoO) exhibits blue when the content in the composite ceramic is, for example, 0.1% by mass or more and less than 3% by mass, and black when the content is 3% by mass or more.

  Cobalt oxide can be made gray when the content in the composite ceramic is 3% by mass or more by setting the firing atmosphere to a nitrogen atmosphere.

  Further, manganese oxide (MnO) is yellow when the content in the composite ceramic is, for example, 0.3% by mass or more and less than 1.7% by mass, and brown when it is 1.7% by mass or more and 3% by mass or less.

Further, iron oxide (Fe ₂ O ₃ ) is yellow when the content in the composite ceramic is, for example, 0.3 mass% or more and less than 2.5 mass%, and brown when it is 2.5 mass% or more and 5 mass% or less.

  According to the probe card substrate of the present invention, it is preferable that the colorant is mainly composed of chromium oxide.

  When the main component of the colorant is chromium oxide, the surface can be made darker, such as purple, so that laser light is absorbed better than white, so laser light is used in the manufacturing process of the probe card substrate. When cutting the probe card substrate, the cutting can be facilitated.

As described above, chromium oxide _(Cr 2 _{O 3)} alone can not only exhibit a dark purple color, together chromium oxide _(Cr 2 _{O 3)} and cobalt oxide (CoO), the chromium oxide _(Cr 2 O ₃ ) By setting the content ratio of cobalt oxide (CoO) to 8: 2 to 9: 1, the lightness index L * in the CIE1976L * a * b * color space is 52 or more and 58 or less, and the chromaticness index A purple color having a * and b * of 1.5 or more and 1.8 or less and −7.6 or more and −6.8 or less, respectively, can be exhibited.

  Here, the lightness index L * is an index indicating the lightness and darkness of the color tone. When the value of the lightness index L * is large, the color tone is bright, and when the value of the lightness index L * is small, the color tone is dark. The chromaticness index a * is an index indicating the degree of red to green color tone. When the value of a * increases in the positive direction, the color tone becomes red. As the absolute value decreases, the color tone becomes less vivid. The color tone becomes dull, and if the value of a * is large in the negative direction, the color tone becomes green. Further, the chromaticness index b * is an index indicating the degree of yellow to blue of the color tone. When the value of b * increases in the positive direction, the color tone becomes yellow, and as the absolute value decreases, the color tone becomes less vivid. The color tone becomes dull when the b * value is large in the negative direction.

In addition, the ratio of chromium oxide (Cr ₂ O ₃ ) and cobalt oxide (CoO) content (chromium oxide: cobalt oxide) is set to 8: 2 to 9: 1, thereby being defined by the following formula (A). The color difference (ΔE * ab), which is the difference in color tones, can be made 2 or less, and the reflected light beam is hardly scattered.
ΔE * ab = ((ΔL *) ² + (Δa *) ² + (Δb *) ² )) ^1/2 (A)
Moreover, according to the probe card substrate of the present invention, the colorant preferably has cobalt oxide as a main component and a content of 1% by mass to 2.5% by mass. When the colorant is composed mainly of cobalt oxide and the content is 1% by mass or more and 2.5% by mass or less, the surface of the probe card substrate can be darkened with a slight amount of colorant. As compared with the case where the surface is colored with a large amount of colorant, the insulation is less likely to be lowered, and the reliability is less likely to be impaired.

By the way, as a sintering aid of the composite ceramics which is the probe card substrate 1 of the present invention, carbonates of Group 2 elements of the periodic table such as calcium carbonate (CaCO ₃ ) and magnesium carbonate (MgCO ₃ ) are used. These are included in the sintered composite ceramics as calcium oxide (CaO) or magnesium oxide (MgO), and may be contained in an amount of 0.3% by mass or more and 1.0% by mass or less, respectively. And each content of calcium oxide (CaO) and magnesium oxide (MgO) calculates | requires each content of calcium (Ca) and magnesium (Mg), respectively by a fluorescent X ray analysis method or an ICP emission analysis method, It can be determined by converting the amount into calcium oxide (CaO) and magnesium oxide (MgO), respectively.

Inevitable impurities contained in this composite ceramic include sodium oxide (Na ₂ O), titanium oxide (TiO ₂ ), niobium oxide (Nb ₂ O ₅ ), yttrium oxide (Y ₂ O ₃ ), boron oxide (B ₂ O ₃ ) and lithium oxide (Li ₂ O). Sodium oxide (Na ₂ O) and titanium oxide (TiO ₂ ) are each 0.09% by mass or less, niobium oxide (Nb ₂ O ₅ ) and yttrium oxide (Y ₂ O ₃ ) are each 0.04% by mass or less, and boron oxide (B ₂ It is preferable that O ₃ ) is 0.004 mass% or less, and lithium oxide (Li ₂ O) is 0.001 mass% or less. These inevitable impurities can be obtained by obtaining the content of the metal element by ICP emission analysis as described above and converting it to an oxide.

  In the probe card substrate 1 of the present invention, the content of alumina in the compound is preferably 20% by mass or more and 70% by mass or less. Within this range, the difference between the thermal expansion coefficient of the composite ceramics and the thermal expansion coefficient of silicon (Si), which is most often used as the material of the semiconductor wafer, can be set to be small. Is formed of silicon (Si), it is possible to reduce the occurrence of misalignment between the probe and the electrode pad in the inspection at a high temperature.

Specifically, the thermal expansion coefficient of silicon (Si) at −40 to + 150 ° C. is 4.2 × 10 ⁻⁶ / ° C., whereas the content of alumina in the compound is 20 mass% or more and 70 mass% or less. it allows the thermal expansion coefficient of -40 to + 0.99 ° C. as ^{3.6 × 10 -6 /℃~4.8×10 -6 / ℃} , it is possible to reduce the difference of thermal expansion coefficient.

  In addition, if the alumina content is high, the rigidity of the composite ceramic will be high, and if the alumina content is low, the thermal expansion coefficient of the composite ceramic will be small. Can be adjusted.

  FIG. 2 is a sectional view showing an example of an embodiment of a semiconductor wafer inspection apparatus using the probe card of the present invention.

  The semiconductor wafer inspection apparatus 13 of the present invention shown in FIG. 2 includes a probe card laminate 11 in which a plurality of probe card substrates 1a, 1b and 1c of the present invention are stacked, and a probe inserted into the through hole 3. 5, and the probe card 12 is fixed to the plate-like support member 4. The semiconductor wafer inspection apparatus 13 has a vacuum chuck 8 that sucks and fixes the semiconductor wafer 6 and a stage 10 that holds the vacuum chuck 8. The vacuum chuck 8 has a built-in heater 9 for heating the semiconductor wafer 6. In the probe card substrates 1a, 1b, and 1c of the present invention that are stacked in plural, the through holes 3 are not necessarily provided so as to overlap all of them. For example, the probe card substrate 1b includes The frame shape may be used as a spacer between the probe card substrates 1a and 1c.

  The support member 4 includes, for example, one of alumina, aluminum nitride, and silicon nitride as a main component, and includes a pad 4a to which the probe 5 is connected on the surface on the probe card laminate 11 side. The pad 4a includes an internal circuit 4b. And electrically connected to a pad 4c formed on the opposite surface. The pads 4a and 4c are made of, for example, photolithography and have conductivity, and the circuit 4b is made of, for example, at least one of Cu, Au, Al, Ni, and a Pb—Sn alloy. ing.

  Then, the semiconductor wafer 6 is sucked and fixed using the vacuum chuck 8 and heated to a predetermined temperature by the heater 9, and the electrode pads 7 arranged on the semiconductor elements 6 a of the semiconductor wafer 6 are applied to the electrode pads 7. The electrical characteristics can be inspected by bringing the probe 5 which is a needle-like stylus into contact. Since the vacuum chuck 8 is for holding the semiconductor wafer 6 to be inspected, it may be replaced with other holding means such as an electrostatic chuck.

  In the probe card laminate 11 of the present invention, the probe card substrate 1a disposed on the support member 4 side is composed of alumina and mullite than the probe card substrate 1c disposed on the semiconductor wafer 6 side. It is preferable that the content of alumina in is large. Further, as shown in FIG. 2, when the probe card laminate 11 is composed of a plurality of probe card substrates 1a, 1b, 1c, the probe card substrate 1b is more probable than the probe card substrate 1c. It is preferable that the probe card substrate 1a has a higher alumina content in the compound composed of alumina and mullite than the substrate 1b.

For example, the thermal expansion coefficient of -40 ℃ ~ + 150 ℃ of the support member 4 are ^{5.8 × 10 -6 /℃~6.2×10 -6 / ℃} , -40 ℃ ~ + 150 ℃ semiconductor wafer 6 is a silicon (Si) When the coefficient of thermal expansion is 4.2 × 10 ⁻⁶ / ° C., the content of alumina in the probe card substrates 1a, 1b, and 1c, which are composite ceramics mainly composed of a compound composed of alumina and mullite, is 90 The thermal expansion coefficient at −40 ° C. to + 150 ° C. is 1a by setting 1% to 70% by weight, and 1c being 40% to 70% by weight. 5.5 × 10 ^-6 /℃~6.0×10 ^-6 / ℃ next, 1b is 4.8 × 10 ^-6 /℃~5.5×10 ^-6 / ℃ next, 1c is 4.0 × 10 ^-6 /℃~4.8×10 ^{- 6} / ° C., the support member 4 and the semiconductor wafer 6, the support member 4 side, and the semiconductor wafer 6 side The difference in thermal expansion coefficient with the probe card substrate 1 arranged on the substrate is reduced, and the thermal expansion coefficient of the probe card laminated body 11 increases from the semiconductor wafer 6 side toward the support member 4 side. In the inspection, the difference in thermal expansion between the semiconductor wafer 6, the probe card 12 and the support member 4 can be suppressed, so that the positional deviation between the probe 5 and the electrode pad 7 is reduced. Can do.

  Further, since the semiconductor wafer device 13 of the present invention shown in FIG. 2 uses the probe card 12 of the present invention provided with the probe card laminate 11 of the present invention and the probe 5, the probe 5, the electrode pad 7, Thus, an excellent semiconductor wafer device 13 with a high inspection efficiency can be obtained.

  FIG. 3 is a sectional view showing another example of the embodiment of the semiconductor wafer inspection apparatus using the probe card of the present invention.

  The semiconductor wafer inspection apparatus shown in FIG. 3 has the same basic configuration as the semiconductor wafer inspection apparatus shown in FIG. 2, but the support member 4 is formed of a resin such as epoxy or bakelite. The difference is that the probe card substrate 1a on the side is replaced with a second probe card substrate 1d made of another composite ceramic.

  Thus, the support member 4 is made of resin, and the probe card laminate 11 of the present invention includes the second probe card substrate 1d made of another composite ceramic on the support member 4 side. The composite ceramic is composed mainly of a compound comprising alumina and zirconia, and the content of alumina in the compound is 9% by mass or more and 41% by mass or less, and is at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide. It is preferable that the coloring agent which has as a main component is included.

For example, when the support member 4 is an epoxy resin in which a glass nonwoven fabric is woven and the coefficient of thermal expansion at −40 ° C. to + 150 ° C. is 7.5 × 10 ⁻⁶ / ° C. or more and 9.5 × 10 ⁻⁶ / ° C. or less, other composites Thermal expansion of other composite ceramics at −40 ° C. to + 150 ° C. when the ceramic is mainly composed of a compound composed of alumina and zirconia, and the alumina content in the compound is 9% by mass or more and 41% by mass or less. since the coefficients can be set to ^{7.5 × 10 -6 /℃~9.5×10 -6 / ℃} , the inspection at a high temperature, the semiconductor wafer 6, the difference in thermal expansion occurring between the members of the probe card 12 and the support member 4 Therefore, it is possible to reduce the occurrence of positional deviation between the probe 5 and the electrode pad 7.

  Further, since the surface of the colorant is colored in a color in which the light beam is less likely to be reflected than white, for example, black, gray, or chromatic color, even if the semiconductor wafer is irradiated with the light beam, the colorant is Since the light beam reflected from the semiconductor wafer is reflected from the surface of the semiconductor wafer and the light beam reflected from the surface of the probe card laminate 11 can be reduced, the semiconductor when the probe card laminate 11 is used. The automatic alignment means for automatically detecting the predetermined position of the wafer can accurately detect the predetermined position of the semiconductor wafer.

Alumina and zirconia, which are the main components of other composite ceramics, can be identified using an X-ray diffraction method. Moreover, what is necessary is just to obtain | require as follows about each content. Specifically, the respective contents of Al and Zr in the composite ceramics are determined by fluorescent X-ray analysis or ICP emission analysis, and the respective contents are converted into oxides of Al ₂ O ₃ and ZrO ₂ , respectively. The amount obtained by adding them is the main component amount.

  2 and 3, the probe card laminate 11 is an example in which three probe card substrates 1 are stacked. However, the probe card substrate 1 may be a plurality of two or more probe card substrates. What is necessary is just to select the number of sheets suitably, if the difference of the thermal expansion in the test | inspection in high temperature can be suppressed according to the difference of the thermal expansion coefficient of the semiconductor wafer 6 and the supporting member 4. FIG. Also, ceramics having a thermal expansion coefficient larger than that of the probe card substrate 1 on the support member 4 side and smaller than that of the support member 4 is disposed between the probe card laminate 11 and the support member 4 of the present invention. There may be.

  Next, an example of a manufacturing method for obtaining the probe card substrate 1 of the present invention will be described.

First, the alumina powder is 8 mass% to 95 mass%, the balance is 100 mass parts so that the remainder is mullite powder, and calcium carbonate (CaCO ₃ ) and magnesium carbonate ( Each powder of MgCO ₃ ) and at least one kind of powder of chromium oxide, cobalt oxide, manganese oxide and iron oxide are added as a coloring agent, respectively, to obtain a blended powder. Then, this mixed powder is put into a rotary mill together with water as a solvent, and mixed and ground with alumina balls for 24 hours. In addition, what is necessary is just to make the average particle diameter after mixing grinding | pulverization into 1 micrometer or more and 3 micrometers or less. It should be noted that calcium carbonate (CaCO ₃ ) and magnesium carbonate (MgCO ₃ ), which are sintering aids, are carbon dioxide (CO ₂ ), which is part of the constituent components, burned down during firing, It exists as calcium oxide (CaO) and magnesium oxide (MgO).

  Next, after adding polyvinyl alcohol, polyethylene glycol, and an acrylic resin as a molding binder so as to be 6% by mass in total with respect to 100% by mass of the mixed powder, they are mixed to form a slurry. Then, a sheet is formed by the doctor blade method using this slurry, and this sheet is punched out with a mold having a predetermined shape, or is subjected to laser processing to form a molded body in which the mounting hole 2 and the through hole 3 are formed. be able to.

  Moreover, what is necessary is just to make a sheet | seat into various shapes, for example, disk shape and square plate shape by cutting, laser processing, etc. as needed. For example, the probe card substrate 1 shown in FIG. 1 can be obtained by putting the molded body processed into various shapes into a firing furnace and holding it at 1550 ° C. to 1650 ° C. for 8 hours to 12 hours. it can.

  In order to make the surface of the probe card substrate 1 gray, cobalt oxide may be used as a colorant and the firing atmosphere may be a nitrogen atmosphere.

  Further, the content of alumina in the compound composed of alumina and mullite is 90% by mass to less than 100% by mass, 70% by mass to less than 90% by mass, and 40% by mass to less than 70% by mass, with the remainder being mullite powder. By using the same manufacturing method as that for the probe card substrate 1 described above, the probe card substrates 1a, 1b and 1c can be obtained.

  Next, an example of a manufacturing method for obtaining the second probe card substrate 1d will be described.

  First, the alumina powder is 9% by mass to 41% by mass, and the balance is 100 parts by mass so that the remainder is zirconia powder. Further, each powder of silicon oxide, calcium carbonate and magnesium carbonate, and the colorant A predetermined amount of at least one powder of chromium oxide, cobalt oxide, manganese oxide and iron oxide is added to prepare a mixed powder. About the subsequent manufacturing method, the 2nd probe card board | substrate 1d can be obtained by using the manufacturing method same as the manufacturing method of the board | substrate 1 for probe cards mentioned above.

  Further, the probe card laminate 11 of the present invention shown in FIG. 2 is stacked with the probe card substrates 1a, 1b, and 1c from the plate-like support member 4 side so that the alumina content in the compound is increased. Then, a fixing member (not shown) such as a pin can be coupled through the mounting hole and fixed to the support member 4. The probe card 12 of the present invention can be obtained by inserting the probe 5 used for the inspection of the electrical characteristics of the electrode pad 7 of the semiconductor element 6a into the through hole 3.

  Further, the semiconductor wafer inspection apparatus 13 according to the present invention is provided by using the probe card 12 according to the present invention having a vacuum chuck 8 for sucking and fixing the semiconductor wafer 6 and a stage 10 for holding the vacuum chuck 8. be able to.

  Similarly, the support member 4 is formed of a resin, and a compound composed of alumina and zirconia is a main component at the position of the probe card substrate 1a shown in FIG. 2, and the content of alumina in this compound is 9% by mass or more and 41% by mass. %, And the second probe card substrate 1d containing a colorant containing at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide as a main component is provided as shown in FIG. The probe card laminate 11 and the probe card 12 of the invention can be obtained, and by using these, the semiconductor wafer inspection apparatus 13 of the present invention can be obtained.

  Examples of the present invention will be specifically described below, but the present invention is not limited to the following examples.

  First, alumina, mullite, chromium oxide, cobalt oxide, manganese oxide, iron oxide, calcium oxide, and magnesium oxide were weighed so as to have the contents shown in Table 1 to prepare powders. In addition, about the component contained as calcium oxide and magnesium oxide in the composite ceramics after sintering, calcium carbonate and magnesium carbonate were used as a sintering aid at the time of preparation. Then, this prepared powder was put into a rotary mill together with water as a solvent, and mixed and ground with alumina balls for 24 hours. The average particle size after mixing and pulverization was 2 μm.

  Next, after adding polyvinyl alcohol, polyethylene glycol, and an acrylic resin as a molding binder to a total of 6% by mass with respect to 100% by mass of the mixed powder, they were mixed to form a slurry. And the sheet | seat was shape | molded by the doctor blade method using this slurry, and the molded object in which the attachment hole 2 and the through-hole 3 were formed was punched out with the metal mold | die of a predetermined shape. Next, this molded body was placed in a firing furnace and held at 1600 ° C. for 10 hours, whereby sample No. 1 of the present invention having a thickness of 3.6 mm and a diameter of 300 mm was obtained. 2, 4, 6, 8, 10, 12 to 23, 25, 27, 29, 31, 33, 35, 37, 38 probe card substrates 1 were obtained.

  The firing atmosphere was a nitrogen atmosphere for sample No. 38 and an air atmosphere for samples other than sample No. 38.

The content of each component of each sample was determined by ICP emission analysis. As a measuring method, first, as a pretreatment, a part of the fired probe card substrate was pulverized in a cemented mortar. Next, 2 g of boric acid (Merck: purity 99.9999%) was placed in a platinum crucible, heated with a burner, melted into glass and allowed to cool, and then 0.1 g of sample and sodium carbonate (Merck: purity 99.999). %) 3 g was added and melted by heating with a burner. Then, after being allowed to cool, it is dissolved in a hydrochloric acid solution, the solution is transferred to a flask, diluted to the marked line with water to make a constant volume, and together with the calibration curve solution, Al, Si, Cr, Co, Mn, Each content of Fe, Ca, and Mg was measured, and converted into oxides of Al ₂ O ₃ , SiO ₂ , Cr ₂ O ₃ , CoO, MnO ₂ , Fe ₂ O ₃ , CaO, and MgO, respectively.

In addition, for the contents of alumina and mullite in the probe card substrate 1, the content of Al ₂ O _{3 in} mullite is calculated from the content of SiO ₂ , and the total value of these is the content of mullite. the value obtained by subtracting the content of _Al 2 _{O 3} in the mullite was the alumina content from the content of Al ₂ O _3. Further, the contents in the compounds of alumina and mullite were determined from these contents and are shown in Table 2.

  And the thermal expansion coefficient of the board | substrate 1 for probe cards was measured in the range of -40 degreeC-+150 degreeC by the laser interferometry. Specifically, a prismatic test piece having a thickness of 3 mm, a width of 4 mm, and a length of 16 mm is cut out from the probe card substrate 1 and further processed so that both end portions in the longitudinal direction are convex outward. did. After attaching this test piece to a laser thermal dilatometer (manufactured by Vacuum Riko Co., Ltd .: LIX-1 type), the temperature was increased from −40 ° C. to + 150 ° C. at 1 ° C./min in a helium atmosphere to obtain a coefficient of thermal expansion. Asked.

  Moreover, the volume specific resistance which shows the insulation of the probe card board | substrate 1 of this invention and the board | substrate for probe cards of a comparative example was measured based on JISC2141-1992. These values are shown in Table 2.

  Moreover, the color tone of the surface of the board | substrate 1 for probe cards was confirmed visually. The color tone is shown in Table 2.

  Further, as a comparative example, sample No. 1 which is a probe card substrate not containing the colorant is used. 1, 3, 5, 7, 9, 11, 24, 26, 28, 30, 32, 34, and 36, and sample No. which is a probe card substrate made of alumina. Sample No. 39, which is a probe card substrate made of mullite. 40, and the content, thermal expansion coefficient and volume resistivity were measured in the same manner as in the examples of the present invention, and the color tone of the surface was visually confirmed. The results are also shown in Tables 1 and 2.

  As can be seen from the results shown in Table 2, it can be seen that by adjusting the content of alumina in the compound comprising alumina and mullite, the coefficient of thermal expansion can be adjusted and the difference in coefficient of thermal expansion can be reduced. Therefore, the material of the semiconductor wafer 6 is selected from silicon (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), silicon carbide (SiC), and the like. Even if it is a thing, it turns out that it can respond so that a thermal expansion coefficient difference may be made small.

  In addition, by including a colorant mainly composed of at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide, the light beam is less likely to be reflected than when the surface of the probe card substrate is white. It is colored purple, pink, red, dark purple, blue, dark blue, black, yellow, brown, or gray. When these probe card substrates are used, a light beam is applied to the semiconductor wafer. Even after irradiation, a part of the light beam is reflected from the semiconductor wafer, and the light reflected from the surface of the probe card can be reduced, so that a predetermined position of the semiconductor wafer is automatically detected. It can be said that the automatic alignment means can accurately detect a predetermined position of the semiconductor wafer.

  In particular, in order to set the surface to be a dark color such as purple, the main component of the colorant is chromium oxide. In addition, in order to set the colorant so as not to lower the insulation, the colorant is the main component. Was cobalt oxide, and it was found that the content is preferably 1% by mass or more and 2.5% by mass or less.

In order to set the difference from the thermal expansion coefficient (4.2 × 10 ⁻⁶ / ° C.) of silicon (Si) most frequently used as the material of the semiconductor wafer 6, the content of alumina in the compound It was found that the content of A is preferably 20% by mass or more and 70% by mass or less, and the content of alumina in the compound is preferably 40% by mass or more and 59% by mass or less.

The sample used in Example 1 is arranged as shown in Table 3 on the probe card substrates 1a, 1b, and 1c of the present invention shown in FIG. 2, and the probe 5 is inserted into the through hole 3, and the support member 4, the probe card laminate 11 for a probe card according to the present invention and the probe 5, which is a probe card 12 according to the present invention. 41 and 42 were obtained. At this time, the support member 4 is made of alumina, and the semiconductor wafer 6 is made of silicon. The thermal expansion coefficients at −40 to + 150 ° C. are 5.72 × 10 ⁻⁶ / ° C. and 4.2 × 10 ^{−6, respectively.} / ° C. Further, as a comparative example, sample No. 1 which is a probe card substrate made of alumina is used. A probe card was prepared using 43.

  The difference in thermal expansion coefficient between the support member 4 and the probe card substrate 1a disposed on the support member 4 side and the thermal expansion coefficient between the semiconductor wafer 6 and the probe card substrate 1c disposed on the semiconductor wafer 6 side are as follows. The differences are shown in Table 3. In addition, the electrical characteristics are inspected by bringing the probe 5 into contact with the electrode pads 7 arranged on the semiconductor wafer 6 at a high temperature in a semiconductor inspection apparatus. Ranking was performed in order of least occurrence of positional deviation between the probe 5 and the electrode pad 7 which are the styluses. The results are shown in Table 3.

As can be seen from the results shown in Table 3, Sample No. 43 has the same material as that of the support member 4, so there was no difference in thermal expansion coefficient with the support member 4, but the difference in thermal expansion coefficient with the semiconductor wafer 6 was as large as 1.52 × 10 ⁻⁶ / ° C. In addition, the most misalignment occurred during inspection at high temperatures. On the other hand, No. which is a sample of the present invention. 41 and no. 42 has a small difference in thermal expansion coefficient between the support member 4 and the semiconductor wafer 6 and the thermal expansion coefficient of the probe card laminate 11 from the semiconductor wafer 6 side toward the support member 4 side increases. There was little occurrence of misalignment during inspection. Sample No. Since the thermal expansion coefficient of No. 42 increased from the semiconductor wafer 6 toward the probe card laminate 11 and further toward the support member 4, the occurrence of misalignment at the time of inspection at a high temperature was minimized.

  First, alumina, zirconia, chromium oxide, cobalt oxide, manganese oxide, iron oxide, silicon oxide, titanium oxide and magnesium oxide were weighed so as to have the contents shown in Table 4 to prepare powders. Then, this prepared powder was put into a rotary mill together with water as a solvent, and mixed and ground with alumina balls for 24 hours. The average particle size after mixing and pulverization was 2 μm. About the manufacturing method after this, by using the same manufacturing method as Example 1, sample no. Probe card substrates 1 of 45, 47, 49, 51, 53, 55, 57, 59, 61 to 72, 74, 76, 78, 80, 81 were obtained.

  The firing atmosphere was a nitrogen atmosphere for sample No. 81 and an air atmosphere for samples other than sample No. 81.

  Further, as a comparative example, sample No. 1 which is a probe card substrate not containing the colorant is used. 44, 46, 48, 50, 52, 54, 56, 58, 60, 73, 75, 77, 79 and Sample No. which is a probe card substrate made of zirconia. 82 was produced.

  And content was calculated | required by the ICP emission analysis method similarly to Example 1, and the thermal expansion coefficient was calculated | required by the laser interference method. Further, Young's modulus and volume resistivity, which are characteristic values indicating the rigidity and insulation properties of the probe card substrate 1 of the present invention and the probe card substrate of the comparative example, are based on JIS R 1602-1995 and JIS C 2141-1992, respectively. Measured.

  Moreover, the color tone of the surface of the board | substrate 1 for probe cards was confirmed visually. The results are shown in Tables 4 and 5.

As can be seen from the results shown in Table 4, the coefficient of thermal expansion can be adjusted by the contents of alumina and zirconia, and when the alumina content decreases, the Young's modulus value decreases and the rigidity decreases. I understand that. From this result, for example, if the support member 4 is an epoxy resin woven with a glass nonwoven fabric and the coefficient of thermal expansion at −40 to + 150 ° C. is 8.5 × 10 ⁻⁶ / ° C., the Young's modulus value is 230 GPa or more. In order to reduce the difference in thermal expansion coefficient of the support member 4 to less than 1.5 × 10 ⁻⁶ / ° C., the main component is a compound composed of alumina and zirconia, and the content of alumina in the compound is 9% by mass. Sample No. of 41 mass% or less. 57, 59, 61 to 72, 74, 76, 78, 81 were found to be preferable.

  In addition, by including a colorant mainly composed of at least one of chromium oxide, cobalt oxide, manganese oxide, and iron oxide, the surface of the probe card substrate is purple, pink, which is less likely to reflect the light beam than white. The color is red, dark purple, blue, dark blue, black, yellow, brown, or gray. When these probe card substrates are used, the semiconductor wafer is irradiated with a light beam. However, since a part of the light beam is reflected from the semiconductor wafer and the light beam reflected from the surface of the probe card can be reduced, auto alignment for automatically detecting a predetermined position of the semiconductor wafer. It can be said that the means can accurately detect a predetermined position of the semiconductor wafer.

  In particular, in order to set the surface to be a dark color such as purple, the main component of the colorant is chromium oxide. In addition, in order to set the colorant so as not to lower the insulation, the colorant is the main component. Was cobalt oxide, and it was found that the content is preferably 1% by mass or more and 2.5% by mass or less.

  As can be seen from the results of Examples 1 to 3, the probe card substrate 1 of the present invention can adjust the thermal expansion coefficient according to the alumina content of the compound composed of alumina and mullite, and can also adjust the semiconductor wafer. It can be said that the predetermined position can be accurately detected. In addition, the probe card laminate 11 of the present invention is formed by stacking a plurality of probe card substrates 1 of the present invention so that the difference in thermal expansion coefficient between the support member 4 and the semiconductor wafer 6 is reduced. Since the coefficient of thermal expansion is arranged from the 6 side toward the support member 4 side, the probe card 12 of the present invention comprising the probe card laminate 11 and the probe 5 is used for inspection at a high temperature. In addition, the displacement between the electrode pad 7 and the probe 5 is less likely to occur. It was found that the semiconductor wafer inspection apparatus 13 using the probe card 12 of the present invention is excellent in inspection efficiency.

1: Probe card substrate 1a, 1b, 1c: Probe card substrate 1d: Second probe card substrate 2: Mounting hole 3: Through hole 4: Support member 5: Probe 6: Semiconductor wafer 7: Electrode pad 8: Vacuum chuck 9: Heater
10: Stage
11: Laminate for probe card
12: Probe card
13: Semiconductor wafer inspection equipment

Claims (10)

For a probe card comprising a composite ceramic mainly composed of a compound comprising alumina and mullite, and containing a colorant mainly comprising at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide substrate. 2. The probe card substrate according to claim 1, wherein a main component of the colorant is chromium oxide. 2. The probe card substrate according to claim 1, wherein the colorant has a main component of cobalt oxide and a content of 1% by mass to 2.5% by mass. The probe card substrate according to any one of claims 1 to 3, wherein the content of the alumina in the compound is 20 mass% or more and 70 mass% or less. A probe card laminate comprising a plurality of probe card substrates stacked according to claim 1, wherein the probe card laminate is fixed to a plate-like support member and disposed on a semiconductor wafer side. The probe card laminate, wherein the probe card substrate disposed on the support member side has a higher content of the alumina in the compound than the probe card substrate. The support member is formed of a resin, and the probe card laminate includes a second probe card substrate made of another composite ceramic on the support member side, and the other composite ceramic is made of alumina and zirconia. A coloring material comprising, as a main component, a content of the alumina in the compound of 9% by mass or more and 41% by mass or less, and comprising at least one of chromium oxide, cobalt oxide, manganese oxide and iron oxide as a main component. The laminate for a probe card according to claim 5, further comprising an agent. The laminate for a probe card according to claim 6, wherein the colorant is composed mainly of chromium oxide. The laminate for a probe card according to claim 6, wherein the colorant has a main component of cobalt oxide and a content of 1% by mass to 2.5% by mass. A probe card comprising the probe card laminate according to any one of claims 5 to 8 and a probe. A semiconductor wafer inspection apparatus using the probe card according to claim 9.

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