JP2011001248A - Method for producing silicon single crystal - Google Patents
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- JP2011001248A JP2011001248A JP2009147809A JP2009147809A JP2011001248A JP 2011001248 A JP2011001248 A JP 2011001248A JP 2009147809 A JP2009147809 A JP 2009147809A JP 2009147809 A JP2009147809 A JP 2009147809A JP 2011001248 A JP2011001248 A JP 2011001248A
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- 239000013078 crystal Substances 0.000 title claims abstract description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000155 melt Substances 0.000 claims abstract description 76
- 238000000034 method Methods 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
- 238000012937 correction Methods 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000010309 melting process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
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Abstract
Description
本発明は、シリコン単結晶の製造方法に関し、特に、チョクラルスキー法を用いたシリコン単結晶の製造方法に関する。 The present invention relates to a method for producing a silicon single crystal, and more particularly to a method for producing a silicon single crystal using the Czochralski method.
半導体デバイスの製造に使用されるシリコンウェーハは、主にチョクラルスキー法（ＣＺ法）により成長させたシリコン単結晶インゴットをスライスすることによって得られる。ＣＺ法とは、石英坩堝内に収容された多結晶シリコン融液に種結晶を漬け、種結晶および石英坩堝を互いに逆方向に回転させながら種結晶を引き上げることにより、その下にシリコン（Si）の単結晶を成長させる方法である。 A silicon wafer used for manufacturing a semiconductor device is obtained by slicing a silicon single crystal ingot grown mainly by the Czochralski method (CZ method). In the CZ method, a seed crystal is immersed in a polycrystalline silicon melt accommodated in a quartz crucible, and the seed crystal and the quartz crucible are rotated in opposite directions, and the seed crystal is pulled up, and silicon (Si) is formed below the seed crystal. This is a method for growing a single crystal.
一般に、種結晶を融液に漬すと、種結晶は急激な熱衝撃を受けるために、種結晶先端部に転位が発生してしまう。この転位を除去するためには、成長界面形状を融液に対して凸形にする必要があり、この成長界面を凸形にするため、成長直径を小さくして、表面からの熱の放出を大きくする必要がある。図１(a)〜(e)はこのプロセスを説明するための模式図であり、種結晶１０１を引き上げるにつれ、融液１０２に浸漬させた際に発生した転位１０３が減少する様子が描かれている。このプロセスは、一般に、ネッキングと呼ばれている。
In general, when a seed crystal is immersed in a melt, the seed crystal is subjected to a rapid thermal shock, so that dislocation occurs at the tip of the seed crystal. In order to remove this dislocation, it is necessary to make the growth interface shape convex with respect to the melt, and in order to make this growth interface convex, the growth diameter is reduced to release heat from the surface. It needs to be bigger. FIGS. 1A to 1E are schematic diagrams for explaining this process. As the
このネッキングプロセスで重要なポイントは、融液の温度設定である。従来は、図２および図３に示すように、温度センサ２０６、ヒータ制御システム２０７およびヒータ２０８を具える装置を用いて、温度センサ２０６（例えば放射温度計等）で融液表面の温度を監視し、適正温度で安定していることを確認してから（３０１）、種結晶２０１を融液２０２に漬し、一定時間経過した段階で、再度温度センサ２０６により温度が最適かどうかを判断した後（３０２）、ネッキングを行っていた。
An important point in this necking process is the temperature setting of the melt. Conventionally, as shown in FIG. 2 and FIG. 3, the temperature sensor 206 (for example, a radiation thermometer) is used to monitor the surface temperature of the melt using a device including a
融液の温度がネック部形成に適さない温度であった場合には、適正温度範囲内になるよう、上記温度センサ２０６の測定値および目標温度をヒータ制御システム２０７へフィードバック（３０３）し、これによりシリコン融液温度を安定化していた。
When the temperature of the melt is not suitable for forming the neck portion, the measured value of the
しかしながら、製造条件の変更等によって、ネック形成可能なシリコン融液温度と温度センサによる測定値との間には誤差が生じ、ネック形状が不安定になるおそれがあった。一例として、上記温度センサが放射温度計である場合には、温度計窓の曇り等によって、測定値と実際の温度とが異なる場合がある。具体的には、シリコン融液温度が高すぎる場合は、ネック形成時にネックが融液から切り離されてしまい、一方、シリコン融液温度が低い場合には、ネック形状が細くならず、ネックが形成できないという問題があった。 However, due to changes in manufacturing conditions, an error occurs between the silicon melt temperature at which the neck can be formed and the measured value by the temperature sensor, and the neck shape may become unstable. As an example, when the temperature sensor is a radiation thermometer, the measured value may differ from the actual temperature due to fogging of the thermometer window. Specifically, if the silicon melt temperature is too high, the neck will be cut off from the melt when forming the neck, while if the silicon melt temperature is low, the neck shape will not become thin and the neck will be formed. There was a problem that I could not.
また、近年の半導体シリコンウェーハの大口径化に伴い、融液温度のより一層正確な制御が求められるようになっており、温度センサよりも高精度の温度制御手段が必要とされていた。 Further, with the recent increase in the diameter of semiconductor silicon wafers, more accurate control of the melt temperature has been required, and a temperature control means with higher accuracy than a temperature sensor has been required.
本発明の目的は、ネック形成時の融液温度を、ネック部形成に適した温度となるよう適切に制御することによって、ネック部の形成の成功率を向上させ、プロセスの効率化を図ったシリコン単結晶の製造方法を提供することにある。 The object of the present invention is to improve the success rate of the formation of the neck portion and improve the efficiency of the process by appropriately controlling the melt temperature at the time of neck formation so as to be a temperature suitable for the neck portion formation. The object is to provide a method for producing a silicon single crystal.
上記目的を達成するため、本発明の要旨構成は以下のとおりである。
（１）多結晶シリコン原料を坩堝内に充填し、加熱融解させることにより多結晶シリコン融液を形成する融解工程と、前記融液に種結晶を浸漬させ、所定の温度および引き上げ速度条件下で前記種結晶を上方に引き上げながら所定形状のシリコン単結晶を形成する引き上げ工程とを具えるチョクラルスキー法によるシリコン単結晶の製造方法であって、前記引き上げ工程は、所定の温度に設定された前記融液に前記種結晶を浸漬させた後、ネック部形成のためのネック本引きを行う前に、ネック部を試し形成するためのネック試し引きを行うことを含み、該ネック試し引き後の種結晶の直径の変化から、前記融液の温度がネック部形成に適した温度であるかを判定することを特徴とするシリコン単結晶の製造方法。
In order to achieve the above object, the gist of the present invention is as follows.
(1) A polycrystalline silicon raw material is filled in a crucible and melted by heating to form a polycrystalline silicon melt; a seed crystal is immersed in the melt; and under a predetermined temperature and pulling speed condition A method for producing a silicon single crystal by a Czochralski method comprising a pulling step of forming a silicon single crystal having a predetermined shape while pulling up the seed crystal upward, wherein the pulling step is set at a predetermined temperature. After immersing the seed crystal in the melt, and before performing neck pulling for forming the neck part, performing neck test pulling for trial formation of the neck part, and after the neck test pulling A method for producing a silicon single crystal, comprising determining whether the temperature of the melt is a temperature suitable for neck formation from a change in the diameter of a seed crystal.
（２）前記判定の結果、前記融液の温度がネック部形成に適さない温度であると判定された場合には、前記融液の温度を調整することによって前記融液を安定化させた後、再度ネック試し引きを行う上記（１）に記載のシリコン単結晶の製造方法。 (2) If it is determined as a result of the determination that the temperature of the melt is not suitable for neck formation, the melt is stabilized by adjusting the temperature of the melt The method for producing a silicon single crystal according to the above (1), wherein neck trial pulling is performed again.
（３）前記判定の結果、前記融液の温度を１回以上調整した場合には、前記融液の温度を計測している温度センサの値を補正する上記（１）または（２）に記載のシリコン単結晶の製造方法。 (3) As a result of the determination, when the temperature of the melt is adjusted once or more, the value of the temperature sensor that measures the temperature of the melt is corrected. A method for producing a silicon single crystal.
（４）前記判定の結果、前記融液の温度がネック部形成に適する温度であると判定された場合には、ネック試し引きに引き継いでネック本引きを行う上記（１）、（２）または（３）に記載のシリコン単結晶の製造方法。 (4) As a result of the determination, when it is determined that the temperature of the melt is a temperature suitable for forming a neck portion, the neck main pulling is performed by taking over the neck trial pulling (1), (2) or The method for producing a silicon single crystal according to (3).
（５）前記温度センサが、放射温度計である上記（３）または（４）に記載のシリコン単結晶の製造方法。 (5) The method for producing a silicon single crystal according to (3) or (4), wherein the temperature sensor is a radiation thermometer.
（６）前記融液の温度の調整は、調整後の融液の温度をＴ１[℃]、調整前の融液の温度をＴ０[℃]、温度補正係数をＨ[℃/mm]、試し引きの目標直径をＰ[mm]、ネック試し引き後の種結晶の直径をＸ[mm]としたとき、
Ｔ１＝Ｔ０＋Ｈ×（Ｘ−Ｐ）
Ｈ＝０．９５
の式にしたがって行われる上記（２）〜（５）のいずれか一に記載のシリコン単結晶の製造方法。
(6) The melt temperature is adjusted by adjusting the melt temperature after adjustment to T 1 [° C.], the melt temperature before adjustment to T 0 [° C.], and the temperature correction coefficient to H [° C./mm]. When the target diameter of the trial pull is P [mm] and the diameter of the seed crystal after the neck trial pull is X [mm],
T 1 = T 0 + H × (X−P)
H = 0.95
The method for producing a silicon single crystal according to any one of (2) to (5), which is performed according to the formula:
（７）前記温度センサの値の補正は、補正後の表示温度をＴ３[℃]、補正後の融液温度換算係数をｋ、補正前の表示温度をＴ２[℃]、補正前の融液温度換算係数をｋ’、初期目標温度をＴ４[℃]、最終目標温度をＴ５[℃]としたとき、
Ｔ３＝ｋＴ２
ｋ＝ｋ’×Ｔ４／Ｔ５
の式にしたがって行われる上記（３）〜（６）のいずれか一に記載のシリコン単結晶の製造方法。
(7) The temperature sensor value is corrected by correcting the display temperature after correction to T 3 [° C.], the melt temperature conversion coefficient after correction to k, the display temperature before correction to T 2 [° C.], and the value before correction. When the melt temperature conversion coefficient is k ′, the initial target temperature is T 4 [° C.], and the final target temperature is T 5 [° C.],
T 3 = kT 2
k = k ′ × T 4 / T 5
The method for producing a silicon single crystal according to any one of (3) to (6), which is performed according to the formula:
本発明によれば、チョクラルスキー法における単結晶引き上げ工程が、所定の温度に設定された融液に種結晶を浸漬させた後、ネック部形成のためのネック本引きを行う前に、ネック部を試し形成するためのネック試し引きを行うことを含み、このネック試し引き後の種結晶の直径の変化から、前記融液の温度がネック部形成に適した温度であるかを判定することによって、ネック部の形成の成功率を向上させ、プロセスの効率化を図ったシリコン単結晶の製造方法を提供することができる。 According to the present invention, after the single crystal pulling step in the Czochralski method immerses the seed crystal in the melt set at a predetermined temperature, before the neck main pulling for forming the neck portion, And determining whether or not the temperature of the melt is suitable for forming the neck portion from the change in the diameter of the seed crystal after the neck trial pulling. Thus, it is possible to provide a method for producing a silicon single crystal that improves the success rate of formation of the neck portion and improves the efficiency of the process.
次に、本発明のシリコン単結晶の製造方法の実施形態について図面を参照しながら説明する。本発明に従うシリコン単結晶の製造方法は、図４に示すように、多結晶シリコン原料を坩堝１０４内に充填し、加熱融解させることにより多結晶シリコン融液１０２を形成する融解工程と、融液１０２に種結晶１０１を浸漬させ、所定の温度および引き上げ速度条件下で種結晶１０１を上方に引き上げながら所定形状のシリコン単結晶を形成する引き上げ工程とを具えるチョクラルスキー法によるシリコン単結晶の製造方法であって、この引き上げ工程は、所定の温度に設定された融液１０２に種結晶１０１を浸漬させた後、ネック部形成のためのネック本引きを行う前に、ネック部を試し形成するためのネック試し引きを行うことを含み、このネック試し引き後の種結晶下部１０５の直径の変化から、融液１０２の温度がネック部形成に適した温度であるかを判定することを特徴とし、かかる構成を有することにより、ネック部形成の成功率を向上させ、プロセスの効率化を図ることができるものである。
Next, an embodiment of a method for producing a silicon single crystal of the present invention will be described with reference to the drawings. As shown in FIG. 4, the method for producing a silicon single crystal according to the present invention includes a melting step of filling a polycrystalline silicon raw material into a
ここで、「ネック部形成に適した温度」とは、シリコン融液に種結晶を接触させて種結晶を所定の引き上げ速度で引き上げた場合に、種結晶下端部の直径が変化しない温度のことを言う。 Here, the “temperature suitable for forming the neck portion” is a temperature at which the diameter of the lower end portion of the seed crystal does not change when the seed crystal is brought into contact with the silicon melt and the seed crystal is pulled at a predetermined pulling speed. Say.
図５および図６は、それぞれ、上述した従来の図２の装置にカメラ１０９を備える直径計測システム１１０を加えた装置の模式図およびフロー図であり、上記試し引き後の種結晶下部１０５の直径は、このカメラ１０９により計測される（４０３）。また、融液１０２の温度は、温度センサ１０６により監視され（４０１，４０２）、これら測定結果の両方は、ヒータ制御システム１０７にフィードバックされる（４０４）。
FIGS. 5 and 6 are a schematic diagram and a flow diagram, respectively, of a device obtained by adding a
このようにして計測された、ネック試し引き後の種結晶下部１０５の直径の傾向データ、平均値、最大値および最小値と、パラメータで設定した融液温度安定判定許容直径とを比較し、判定の結果、融液１０２の温度がネック部形成に適さない温度であると判定された場合には、融液１０２の温度を調整することによって融液を安定化させた後、再度ネック試し引きを行うのが好ましい。このとき、試し引きで形成した不適な種結晶下部１０５は、融液に溶解させることで再利用することができる。
The diameter trend data, average value, maximum value and minimum value of the seed crystal
融液１０２の温度の調整は、調整後の融液の温度をＴ１[℃]、調整前の融液の温度をＴ０[℃]、温度補正係数をＨ[℃/mm]、試し引きの目標直径をＰ[mm]、ネック試し引き後の種結晶の直径をＸ[mm]としたとき、
Ｔ１＝Ｔ０＋Ｈ×（Ｘ−Ｐ）
Ｈ＝０．９５
の式にしたがって行われるのが好ましい。なお、この温度補正係数Ｈは、実験により得られた値である。
The temperature of the
T 1 = T 0 + H × (X−P)
H = 0.95
Is preferably carried out according to the formula: The temperature correction coefficient H is a value obtained through experiments.
一方、判定の結果、融液１０２の温度がネック部形成に適する温度であると判定された場合には、ネック試し引きに引き継いでネック本引きを行うのが好ましい。
On the other hand, if it is determined as a result of the determination that the temperature of the
判定の結果、融液１０２の温度を１回以上調整した場合には、融液の温度を計測している温度センサの値を補正するのが好ましい。この補正は、補正後の表示温度をＴ３[℃]、補正後の融液温度換算係数をｋ、補正前の表示温度をＴ２[℃]、補正前の融液温度換算係数をｋ’、初期目標温度をＴ４[℃]、最終目標温度をＴ５[℃]としたとき、
Ｔ３＝ｋＴ２
ｋ＝ｋ’×Ｔ４／Ｔ５
の式にしたがって行われるのが好ましい。
As a result of the determination, when the temperature of the
T 3 = kT 2
k = k ′ × T 4 / T 5
Is preferably carried out according to the formula:
温度センサとしては、熱伝対や放射温度計等を用いることができ、特に、装置への取り付けの容易さ、メンテナンス等の観点から、放射温度計を用いるのがより好ましい。 As the temperature sensor, a thermocouple, a radiation thermometer, or the like can be used. In particular, it is more preferable to use a radiation thermometer from the viewpoint of ease of attachment to the apparatus, maintenance, and the like.
上述したところは、一例として示されたものであって、本発明はこの実施形態に限定されるものではない。 The above description is given as an example, and the present invention is not limited to this embodiment.
（実施例１）
実施例１は図５に示す装置を用い、坩堝内にシリコン原料を充填し、炉内圧：2666Pa、アルゴンガスの雰囲気内で加熱溶融してシリコン融液を形成した。このシリコン融液の温度は放射温度計で測定し、約1420℃程度となるよう調整した。その後、種結晶を前記融液へ浸し、種結晶の回転速度12rpm、坩堝の回転速度15rpm、引き上げ速度1〜2mm/minで同一雰囲気中で種結晶を引き上げることによりネック試し引きを行った。この際、ネック試し引き後の種結晶の直径の変化から、融液の温度がネック部形成に適した温度であるかを判定し、判定の結果、融液の温度がネック部形成に適さない温度であると判定した場合には、融液の温度がネック部形成に適する温度になるまで、融液の温度を調整することによって前記融液を安定化させた。融液の温度の調整は、調整後の融液の温度をＴ１[℃]、調整前の融液の温度をＴ０[℃]、温度補正係数をＨ[℃/mm]、試し引きの目標直径をＰ[mm]、ネック試し引き後の種結晶の直径をＸ[mm]としたとき、
Ｔ１＝Ｔ０＋Ｈ×（Ｘ−Ｐ）
Ｈ＝０．９５
の式にしたがって行い、この直径Ｘはカメラによる画像から測定した。
判定の結果、前記融液の温度を１回以上調整した場合には、前記融液の温度を計測している放射温度計の値を補正し、この補正は、補正後の表示温度をＴ３[℃]、補正後の融液温度換算係数をｋ、補正前の表示温度をＴ２[℃]、補正前の融液温度換算係数をｋ’、初期目標温度をＴ４[℃]、最終目標温度をＴ５[℃]としたとき、
Ｔ３＝ｋＴ２
ｋ＝ｋ’×Ｔ４／Ｔ５
の式にしたがって行った。ここでは、Ｔ４＝1450，Ｔ５＝1452とした。
Example 1
In Example 1, a silicon raw material was filled in a crucible using the apparatus shown in FIG. 5, and a silicon melt was formed by heating and melting in an atmosphere of furnace internal pressure: 2666 Pa and argon gas. The temperature of this silicon melt was measured with a radiation thermometer and adjusted to about 1420 ° C. Thereafter, the seed crystal was immersed in the melt, and the neck test pulling was performed by pulling the seed crystal in the same atmosphere at a seed crystal rotation speed of 12 rpm, a crucible rotation speed of 15 rpm, and a pulling speed of 1 to 2 mm / min. At this time, it is determined from the change in the diameter of the seed crystal after the trial pulling of the neck whether the temperature of the melt is suitable for forming the neck portion. As a result of the determination, the temperature of the melt is not suitable for forming the neck portion. When it was determined that the temperature was high, the melt was stabilized by adjusting the temperature of the melt until the temperature of the melt reached a temperature suitable for neck formation. The melt temperature is adjusted by adjusting the melt temperature after adjustment to T 1 [° C], the melt temperature before adjustment to T 0 [° C], the temperature correction coefficient to H [° C / mm], When the target diameter is P [mm] and the diameter of the seed crystal after the neck trial pull is X [mm],
T 1 = T 0 + H × (X−P)
H = 0.95
This diameter X was measured from an image taken by a camera.
As a result of the determination, when the temperature of the melt is adjusted at least once, the value of the radiation thermometer that measures the temperature of the melt is corrected, and this correction is performed by changing the display temperature after correction to T 3. [° C], the melt temperature conversion coefficient after correction, k, the display temperature before correction is T 2 [° C], the melt temperature conversion coefficient before correction is k ′, the initial target temperature is T 4 [° C], and the final When the target temperature is T 5 [° C]
T 3 = kT 2
k = k ′ × T 4 / T 5
It was performed according to the following formula. Here, T 4 = 1450 and T 5 = 1452 were used.
（比較例１）
上記ネック試し引きを行わないこと以外は、実施例１と同様の方法によりネック部を形成した。
(Comparative Example 1)
A neck portion was formed by the same method as in Example 1 except that the neck trial pulling was not performed.
（評価）
実施例１および比較例１の製造方法によりネック部を30個形成し、そのうち適正範囲の直径で形成できたものをネック形成成功として、そのネック形成成功率をそれぞれ計算したものを表１に示す。
(Evaluation)
Table 1 shows the results of calculating the neck formation success rate by forming 30 neck portions by the manufacturing method of Example 1 and Comparative Example 1 and determining that the neck formation successes were those that could be formed with a diameter in an appropriate range. .
表１の結果から、本発明に従う方法により製造されたネック部は、ネック試し引きを行わない比較例よりも、ネック形成成功率が向上していることがわかる。 From the results of Table 1, it can be seen that the neck portion manufactured by the method according to the present invention has a higher neck formation success rate than the comparative example in which the neck trial pulling is not performed.
本発明によれば、引き上げ工程が、所定の温度に設定された融液に種結晶を浸漬させた後、ネック部形成のためのネック本引きを行う前に、ネック部を試し形成するためのネック試し引きを行うことを含み、このネック試し引き後の種結晶の直径の変化から、前記融液の温度がネック部形成に適した温度であるかを判定することによって、ネック部形成の成功率を向上させ、プロセスの効率化を図ったシリコン単結晶の製造方法を提供することができる。 According to the present invention, the pulling step is for tentatively forming the neck portion after immersing the seed crystal in the melt set at a predetermined temperature and before performing the neck pulling for forming the neck portion. Successful neck formation by determining whether the temperature of the melt is suitable for neck formation from the change in the diameter of the seed crystal after neck trial pulling. It is possible to provide a method for producing a silicon single crystal with improved efficiency and improved process efficiency.
１０１ 種結晶
１０２ 融液
１０３ 転位
１０４ 坩堝
１０５ 種結晶下部
１０６ 温度センサ
１０７ ヒータ制御システム
１０８ ヒータ
１０９ カメラ
１１０ 直径測定システム
DESCRIPTION OF
Claims (7)
前記引き上げ工程は、所定の温度に設定された前記融液に前記種結晶を浸漬させた後、ネック部形成のためのネック本引きを行う前に、ネック部を試し形成するためのネック試し引きを行うことを含み、該ネック試し引き後の種結晶の直径の変化から、前記融液の温度がネック部形成に適した温度であるかを判定することを特徴とするシリコン単結晶の製造方法。 A melting process for forming a polycrystalline silicon melt by filling a polycrystalline silicon raw material in a crucible and heating and melting the seed crystal, immersing the seed crystal in the melt, and performing the seed crystal under a predetermined temperature and pulling speed condition A method for producing a silicon single crystal by the Czochralski method, comprising a pulling step of forming a silicon single crystal having a predetermined shape while pulling upward.
In the pulling step, after immersing the seed crystal in the melt set at a predetermined temperature, before performing neck pulling for neck portion formation, neck test pulling for trial formation of the neck portion is performed. And determining whether or not the temperature of the melt is a temperature suitable for forming the neck portion from the change in the diameter of the seed crystal after the neck trial pulling. .
Ｔ１＝Ｔ０＋Ｈ×（Ｘ−Ｐ）
Ｈ＝０．９５
の式にしたがって行われる請求項２〜５のいずれか一項に記載のシリコン単結晶の製造方法。 The melt temperature is adjusted by adjusting the melt temperature to T 1 [° C.], the melt temperature before adjustment to T 0 [° C.], the temperature correction coefficient to H [° C./mm], and trial pulling. When the target diameter is P [mm] and the diameter of the seed crystal after the neck trial pull is X [mm],
T 1 = T 0 + H × (X−P)
H = 0.95
The method for producing a silicon single crystal according to any one of claims 2 to 5, which is performed according to the formula:
Ｔ３＝ｋＴ２
ｋ＝ｋ’×Ｔ４／Ｔ５
の式にしたがって行われる請求項３〜６のいずれか一項に記載のシリコン単結晶の製造方法。 The correction of the temperature sensor value is T 3 [° C.] after the corrected display temperature, k is the melt temperature conversion coefficient after correction, T 2 [° C.] is the display temperature before correction, and the melt temperature before correction. When the conversion coefficient is k ′, the initial target temperature is T 4 [° C.], and the final target temperature is T 5 [° C.],
T 3 = kT 2
k = k ′ × T 4 / T 5
The method for producing a silicon single crystal according to any one of claims 3 to 6, which is performed according to the formula:
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| WO2012098824A1 (en) * | 2011-01-20 | 2012-07-26 | 信越半導体株式会社 | Method for measurement of temperature of melt, radiation thermometer, and process for production of silicon single crystals |
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