JP2010501121A - 固定磨き剤ｃｍｐのための選択性化学薬剤 - Google Patents

固定磨き剤ｃｍｐのための選択性化学薬剤 Download PDF

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Publication number
JP2010501121A
JP2010501121A JP2009524807A JP2009524807A JP2010501121A JP 2010501121 A JP2010501121 A JP 2010501121A JP 2009524807 A JP2009524807 A JP 2009524807A JP 2009524807 A JP2009524807 A JP 2009524807A JP 2010501121 A JP2010501121 A JP 2010501121A
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JP
Japan
Prior art keywords
polishing
composition
substrate
abrasive
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009524807A
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English (en)
Japanese (ja)
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JP2010501121A5 (enExample
Inventor
グレゴリー イー． メンク，
ロバート エル． ジャクソン，
ガーレン シー． ルーング，
ゴパラクリシュナ ビー． プラブー，
ピーター マクレイノルズ，
アナンド エヌ． イアー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2010501121A publication Critical patent/JP2010501121A/ja
Publication of JP2010501121A5 publication Critical patent/JP2010501121A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2009524807A 2006-08-16 2007-08-16 固定磨き剤ｃｍｐのための選択性化学薬剤 Pending JP2010501121A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US82262506P 2006-08-16 2006-08-16
US11/839,048 US20080182413A1 (en) 2006-08-16 2007-08-15 Selective chemistry for fixed abrasive cmp
PCT/US2007/076135 WO2008022277A2 (en) 2006-08-16 2007-08-16 Selective chemistry for fixed abrasive cmp

Publications (2)

Publication Number Publication Date
JP2010501121A true JP2010501121A (ja) 2010-01-14
JP2010501121A5 JP2010501121A5 (enExample) 2010-10-14

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ID=39083149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009524807A Pending JP2010501121A (ja) 2006-08-16 2007-08-16 固定磨き剤ｃｍｐのための選択性化学薬剤

Country Status (3)

Country Link
US (1) US20080182413A1 (enExample)
JP (1) JP2010501121A (enExample)
WO (1) WO2008022277A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010537404A (ja) * 2007-08-15 2010-12-02 スリーエム イノベイティブ プロパティズ カンパニー 半導体製作に適した表面に改質するための組成物及び方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090023362A1 (en) * 2007-07-17 2009-01-22 Tzu-Shin Chen Retaining ring for chemical mechanical polishing, its operational method and application system
US20100096360A1 (en) * 2008-10-20 2010-04-22 Applied Materials, Inc. Compositions and methods for barrier layer polishing
US8602842B2 (en) * 2010-03-12 2013-12-10 Wayne O. Duescher Three-point fixed-spindle floating-platen abrasive system
US8740668B2 (en) * 2010-03-12 2014-06-03 Wayne O. Duescher Three-point spindle-supported floating abrasive platen
US8647171B2 (en) * 2010-03-12 2014-02-11 Wayne O. Duescher Fixed-spindle floating-platen workpiece loader apparatus
US8500515B2 (en) * 2010-03-12 2013-08-06 Wayne O. Duescher Fixed-spindle and floating-platen abrasive system using spherical mounts
KR20230025243A (ko) * 2021-08-13 2023-02-21 삼성전자주식회사 화학적 기계적 연마용 슬러리 조성물

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001200242A (ja) * 1999-12-08 2001-07-24 Eastman Kodak Co 水性スラリー
WO2004069947A1 (en) * 2003-02-03 2004-08-19 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2006052433A2 (en) * 2004-11-05 2006-05-18 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
US7063597B2 (en) * 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001200242A (ja) * 1999-12-08 2001-07-24 Eastman Kodak Co 水性スラリー
WO2004069947A1 (en) * 2003-02-03 2004-08-19 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
WO2006052433A2 (en) * 2004-11-05 2006-05-18 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010537404A (ja) * 2007-08-15 2010-12-02 スリーエム イノベイティブ プロパティズ カンパニー 半導体製作に適した表面に改質するための組成物及び方法

Also Published As

Publication number Publication date
WO2008022277A3 (en) 2008-05-08
US20080182413A1 (en) 2008-07-31
WO2008022277A2 (en) 2008-02-21

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