JP2010283386A - Semiconductor integrated circuit, and i/o block disposing method - Google Patents

Semiconductor integrated circuit, and i/o block disposing method Download PDF

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JP2010283386A
JP2010283386A JP2010201305A JP2010201305A JP2010283386A JP 2010283386 A JP2010283386 A JP 2010283386A JP 2010201305 A JP2010201305 A JP 2010201305A JP 2010201305 A JP2010201305 A JP 2010201305A JP 2010283386 A JP2010283386 A JP 2010283386A
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block
pad
pitch
pad pitch
pitches
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JP5337119B2 (en
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Takashi Ono
剛史 大野
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Renesas Electronics Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit wherein its pad pitch can be selected according to its desired I/O number, and can be achieved by its I/O block of its I/O pitch of one kind, and to provide its I/O block disposing method. <P>SOLUTION: In the disposing region portion of the I/O block that can cope with multi-pin, the size of each I/O block, a pad pitch, and the size of each I/O wiring have regularity, the I/O blocks are shifted by a desired pad pitch in the X direction while being stacked vertically, an inner region is provided in its center, and further, the I/O block disposing regions are provided in a periphery of the semiconductor integrated circuit, and the pads are disposed in more outside than the I/O-block disposing region. In such a configuration, the size of each I/O block is made equal to the integer times of the desired pad pitch, and the sizes of the wiring group and the wiring are made equal to the size capable of being disposed in the desired minimum pad pitch. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、多ピン化に対応する半導体集積回路に適用可能なI/Oブロック配置技術に係り、特に希望するI/O数に応じパッドピッチが選択でき、かつ希望するI/O数に応じ無駄なくI/Oブロック配置領域が変化する場合に1種類のI/OピッチのI/Oブロックで実現する半導体集積回路及びI/Oブロック配置方法に関する。   The present invention relates to an I / O block arrangement technique applicable to a semiconductor integrated circuit corresponding to an increase in the number of pins. In particular, a pad pitch can be selected according to a desired number of I / Os and according to a desired number of I / Os. The present invention relates to a semiconductor integrated circuit and an I / O block arrangement method realized by an I / O block having one type of I / O pitch when an I / O block arrangement area changes without waste.

従来、I/Oブロック配置方式は、多ピン化に対応する半導体集積回路の分野、特に、少ないピン数のパッケージからフリップチップ(Flip Chip)などのように非常に多いピン数まで対応するASIC(ApplicationSpecific Integrated Circuit:特定用途向け専用LSI)等に用いられている(第1従来技術)。   Conventionally, the I / O block arrangement method is used in the field of semiconductor integrated circuits corresponding to the increase in the number of pins, particularly in an ASIC (from tiny pins to a very large number of pins such as flip chip). Application Specific Integrated Circuit (LSI for specific application) etc. (first prior art).

従来のI/Oブロック配置方式(第1従来技術)は、一般的に希望するパッドピッチ毎にI/Oピッチの異なるI/Oブロックを用意したり、1種類のI/OピッチのI/Oブロックで全て実現して希望するパッドピッチで実現されるパッド数と同数のI/Oブロックだけを用いたりしていた。   In the conventional I / O block arrangement method (first prior art), I / O blocks having different I / O pitches are generally prepared for each desired pad pitch, or I / O blocks having one type of I / O pitch are prepared. All of the O blocks are implemented, and only the same number of I / O blocks as the number of pads realized at a desired pad pitch are used.

しかし近年の高集積化により、無駄な領域を排除すべく希望するパッドピッチ毎にI/Oピッチの異なるI/Oバッファを用意することを希望され、多くの開発工数を必要とするという問題点があった。   However, due to high integration in recent years, it is desired to prepare I / O buffers with different I / O pitches for each desired pad pitch in order to eliminate useless areas, which requires a lot of development man-hours. was there.

このような問題点を解決することを目的とする従来技術としては、例えば、特開平9−8227号公報(第2従来技術)や特開平5−267302号公報(第3従来技術)に記載のものがある。   Examples of conventional techniques for solving such problems are described in, for example, JP-A-9-8227 (second conventional technique) and JP-A-5-267302 (third conventional technique). There is something.

第2従来技術や第3従来技術では、I/Oセルを縦積みにしたり、フリップチップ(Flip Chip)への適応を目的としチップ周辺に配置するI/Oブロックと内部領域に配置するI/Oブロックでその形状を工夫する技術が開示されている。   In the second prior art and the third prior art, I / O cells are arranged vertically and I / O blocks arranged in the periphery of the chip for the purpose of adapting to a flip chip (Flip Chip) and I / O arranged in an internal region. A technique for devising the shape with an O block is disclosed.

特開平9−8227号公報JP-A-9-8227 特開平5−267302号公報Japanese Patent Laid-Open No. 5-267302

しかしながら、上記第2従来技術や上記第3従来技術は、I/Oセルを縦積みにしたり、フリップチップ(Flip Chip)への適応を目的としチップ周辺に配置するI/Oブロックと内部領域に配置するI/Oブロックでその形状を工夫しているものの、希望するパッドピッチずつずらした状態で、必要なI/Oブロック数に応じてI/Oブロック領域が変化する構造となっていない。   However, the second prior art and the third prior art have an I / O block arranged in the inner area and an I / O block arranged around the chip for the purpose of stacking I / O cells or adapting to a flip chip (Flip Chip). Although the shape of the I / O block to be arranged is devised, the I / O block area does not change in accordance with the number of necessary I / O blocks while being shifted by a desired pad pitch.

このため、第2従来技術は、コストに影響するパッドピッチ毎に異なるパッドサイズなどの基準に対応しづらいという問題点があった。   For this reason, the second prior art has a problem that it is difficult to cope with a standard such as a different pad size for each pad pitch that affects the cost.

同様に、第3従来技術は、フリップチップ(Flip Chip)以外のパッケージに適用する場合、チップ周辺に配置するI/Oブロックにおいて上記第1従来技術の問題点を解決できていないという問題点があった。   Similarly, when the third prior art is applied to a package other than a flip chip, the problem of the first prior art cannot be solved in an I / O block arranged around the chip. there were.

本発明は斯かる問題点を鑑みてなされたものであり、その目的とするところは、希望するI/O数に応じパッドピッチが選択でき、かつ希望するI/O数に応じ無駄なくI/Oブロック配置領域が変化する場合に1種類のI/OピッチのI/Oブロックで実現するための半導体集積回路及びI/Oブロック配置方法を提供する点にある。   The present invention has been made in view of such a problem, and an object of the present invention is to select a pad pitch according to a desired number of I / Os and without waste according to a desired number of I / Os. The object is to provide a semiconductor integrated circuit and an I / O block arrangement method for realizing an I / O block having one type of I / O pitch when the O block arrangement area changes.

この発明の請求項1に記載の発明の要旨は、多ピンに対応可能なI/Oブロック配置領域の部分において、I/Oブロックの寸法、パッドピッチ、及びI/Oへの配線の各寸法に規則性を持たせるとともに、複数の前記パッドピッチを設定し、中央に内部領域が設けられ、周辺に前記I/Oブロック配置領域が設けられ、前記I/Oブロック配置領域の更に外側にパッドが設けられるという構成に対し、前記I/Oブロックの前記X方向の寸法を複数の前記パッドピッチの整数倍としたI/Oブロック配置構成を有し、前記複数のパッドピッチの整数倍となる値が予め設定された制約値よりも大きな場合、前記I/Oブロックの前記X方向の寸法は、前記制約値内であって、複数の前記パッドピッチの一部を除くパッドピッチの整数倍に設定され、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当する第1のパッドピッチと、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当しない第2のパッドピッチと、が生成され、前記第2のパッドピッチに対応して設けられるI/Oブロックは、前記X方向に隣接する他のI/Oブロックとの間に間隔を有することを特徴とする半導体集積回路に存する。また、この発明の請求項6に記載の発明の要旨は、多ピンに対応可能な半導体集積回路のI/Oブロック配置領域の部分において、I/Oブロックの寸法、パッドピッチ、及びI/Oへの配線の各寸法に規則性を持たせる工程と、複数のパッドピッチを設定する工程と、半導体集積回路の中央に内部領域を設ける工程と、前記半導体集積回路の周辺に前記I/Oブロック配置領域を設ける工程と、前記I/Oブロック配置領域の更に外側にパッドを設ける工程と、前記I/Oブロックの寸法を複数の前記パッドピッチの整数倍とする工程を有し、前記I/Oブロックの寸法を設定する工程は、前記複数のパッドピッチの整数倍となる値が予め設定された制約値よりも大きな場合、前記I/Oブロックの前記X方向の寸法を、前記制約値内であって、複数の前記パッドピッチの一部を除くパッドピッチの整数倍に設定し、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当する第1のパッドピッチと、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当しない第2のパッドピッチと、を生成し、前記第2のパッドピッチに対応して設けられるI/Oブロックを、前記X方向に隣接する他のI/Oブロックとの間に間隔を空けて配置することを特徴とするI/Oブロック配置方法に存する。 According to the first aspect of the present invention, the I / O block dimensions, the pad pitch, and the dimensions of the wiring to the I / O in the portion of the I / O block arrangement area that can accommodate a large number of pins. Is provided with regularity, a plurality of pad pitches are set, an inner area is provided in the center, the I / O block arrangement area is provided in the periphery, and the pad is further outside the I / O block arrangement area. Is provided with an I / O block arrangement configuration in which the dimension in the X direction of the I / O block is an integral multiple of the plurality of pad pitches, and is an integral multiple of the plurality of pad pitches. When the value is larger than a preset constraint value, the dimension in the X direction of the I / O block is within the constraint value and is an integral multiple of the pad pitch excluding a part of the plurality of pad pitches. Setting A first pad pitch in which an integral multiple of the pad pitch corresponds to a dimension in the X direction of the I / O block, and a second in which an integral multiple of the pad pitch does not correspond to a dimension in the X direction of the I / O block. A pad pitch is generated, and an I / O block provided corresponding to the second pad pitch is spaced from another I / O block adjacent in the X direction. It exists in a semiconductor integrated circuit. According to the sixth aspect of the present invention, the I / O block dimensions, the pad pitch, and the I / O in the I / O block arrangement region of the semiconductor integrated circuit that can handle multiple pins. A step of providing regularity to each dimension of the wiring to the substrate, a step of setting a plurality of pad pitches, a step of providing an internal region in the center of the semiconductor integrated circuit, and the I / O block around the semiconductor integrated circuit A step of providing an arrangement region, a step of providing a pad further outside the I / O block arrangement region, and a step of setting the dimensions of the I / O block to a multiple of the pad pitch. In the step of setting the dimension of the O block, when a value that is an integral multiple of the plurality of pad pitches is larger than a preset constraint value, the dimension of the I / O block in the X direction is within the constraint value. In The pad pitch is set to an integral multiple of the pad pitch excluding a part of the pad pitch, and the integral multiple of the pad pitch corresponds to the dimension in the X direction of the I / O block, and the pad pitch A second pad pitch whose integer multiple does not correspond to the dimension in the X direction of the I / O block, and an I / O block provided corresponding to the second pad pitch is adjacent to the X direction. The I / O block arrangement method is characterized in that the I / O block is arranged with an interval between other I / O blocks.

本発明は以上のように構成されているので、希望するI/O数に応じパッドピッチが選択でき、かつ希望するI/O数に応じ無駄なくI/Oブロック配置領域が変化する場合に1種類のI/OピッチのI/Oブロックで実現できるようになるといった効果を奏する。   Since the present invention is configured as described above, the pad pitch can be selected according to the desired number of I / Os, and 1 when the I / O block arrangement area changes without waste according to the desired number of I / Os. There is an effect that it can be realized by an I / O block of various I / O pitches.

本発明の第1の実施の形態に係る半導体集積回路のI/Oブロックの配置図である。1 is a layout diagram of an I / O block of a semiconductor integrated circuit according to a first embodiment of the present invention. 第1の実施の形態の半導体集積回路における複数のパッドピッチに対応するI/Oブロックの配置図である。FIG. 3 is a layout diagram of I / O blocks corresponding to a plurality of pad pitches in the semiconductor integrated circuit according to the first embodiment. 本発明の第2の実施の形態に係る半導体集積回路のI/Oブロックの配置図である。FIG. 6 is a layout diagram of an I / O block of a semiconductor integrated circuit according to a second embodiment of the present invention. 本発明の第3の実施の形態に係る半導体集積回路のI/Oブロックの配置図である。FIG. 7 is a layout diagram of an I / O block of a semiconductor integrated circuit according to a third embodiment of the present invention.

本発明は、多くのピンを必要とする半導体集積回路におけるI/Oブロック配置領域の部分において、I/Oブロックの寸法(I/Oピッチ)、パッドピッチ、及びI/O(Input(入力端子)/Output(出力端子)の略)への配線の各寸法に規則性を持たせるとともに、希望するパッドピッチずつX方向(紙面左右方向)にI/Oブロックをずらして縦積みに配置したI/Oブロック配置構成を有する点に特徴を有している。以下、本発明の実施の形態を図面に基づいて詳細に説明する。   The present invention relates to an I / O block dimension (I / O pitch), a pad pitch, and an I / O (Input (input terminal)) in a portion of an I / O block arrangement region in a semiconductor integrated circuit that requires many pins. ) / Output (abbreviation of output terminal)) In addition to providing regularity to each dimension of wiring to I), I / O blocks are shifted in the X direction (left and right direction on the paper) by a desired pad pitch and arranged vertically. It is characterized by having an / O block arrangement configuration. Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(第1の実施の形態)以下、本発明の第1の実施の形態を図面に基づいて詳細に説明する。図1は本発明の第1の実施の形態に係る半導体集積回路1のI/Oブロック4の配置図である。図1において、1は本実施の形態の半導体集積回路、2はI/Oブロック配置領域、3は内部領域、4はI/Oブロック、5はパッド、6は配線群、7は配線を示している。   (First Embodiment) Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a layout diagram of an I / O block 4 of a semiconductor integrated circuit 1 according to the first embodiment of the present invention. In FIG. 1, 1 is a semiconductor integrated circuit of the present embodiment, 2 is an I / O block arrangement area, 3 is an internal area, 4 is an I / O block, 5 is a pad, 6 is a wiring group, and 7 is a wiring. ing.

本実施の形態のI/Oブロック配置構成(I/Oブロック配置方法)は、希望するパッドピッチに1種類のI/OピッチのI/Oで対応でき、つまり希望するI/O数に応じ無駄なくI/Oブロック配置領域2を変化させるものとなる。   The I / O block arrangement configuration (I / O block arrangement method) of the present embodiment can support a desired pad pitch with I / O of one type of I / O pitch, that is, according to the desired number of I / Os. The I / O block arrangement area 2 is changed without waste.

すなわち、図1に示すように、本実施の形態のI/Oブロック配置構成(I/Oブロック配置方法)では、半導体集積回路1の中央に内部領域3が設けられ、内部領域3の周辺にI/Oブロック配置領域2が設けられ、I/Oブロック配置領域2の更に外側にパッド5が設けられるという構成に対し、I/Oブロック4の寸法(I/Oピッチ)(図では120μm)を希望するパッドピッチ(図では30μm)の整数倍(図の例では4倍)とし、内部回路(不図示)とI/Oブロック4を接続する配線群6の寸法を希望する最小パッドピッチで配置できる寸法とし、かつI/Oブロック4とパッド5を接続する配線7の寸法を希望する最小パッドピッチで配置できる寸法とし、それらの配線(配線群6及び配線7)のX方向(紙面左右方向)における中心位置を一致させ、I/Oブロック4を希望するパッドピッチずつX方向(紙面左右方向)にずらして、I/Oブロック4の寸法(I/Oピッチ)をパッドピッチで割った数だけ縦積みに配置している。   That is, as shown in FIG. 1, in the I / O block arrangement configuration (I / O block arrangement method) of the present embodiment, an internal region 3 is provided in the center of the semiconductor integrated circuit 1 and around the internal region 3. In contrast to the configuration in which the I / O block arrangement area 2 is provided and the pad 5 is provided further outside the I / O block arrangement area 2, the dimensions (I / O pitch) of the I / O block 4 (120 μm in the figure) Is an integral multiple of the desired pad pitch (30 μm in the figure) (4 times in the example in the figure), and the dimension of the wiring group 6 connecting the internal circuit (not shown) and the I / O block 4 is the desired minimum pad pitch. The size of the wiring 7 that connects the I / O block 4 and the pad 5 is set to a size that can be arranged at a desired minimum pad pitch, and the X direction (right and left of the page) of those wirings (the wiring group 6 and the wiring 7) Direction) The center position of the I / O block 4 is matched, the I / O block 4 is shifted in the X direction (left and right direction on the paper) by the desired pad pitch, and the dimension of the I / O block 4 (I / O pitch) is divided by the pad pitch. They are arranged vertically.

このように寸法的な規則性を有するI/Oブロック配置構成は、等価的に、パッドピッチに応じてI/O高さが変化する。   In this way, the I / O block arrangement configuration having dimensional regularity is equivalently changed in I / O height according to the pad pitch.

その結果、複数のパッドピッチ(例えば、30μm,40μm,60μm,120μm)に1種類のI/Oピッチで対応していた場合に比べ、無駄なI/Oブロック配置領域2がなくなり製造コストが低減できるようになるといった効果を奏する。また、パッドピッチ毎に、I/Oピッチがパッドピッチと同じになるI/Oブロック4を複数種類用意していた場合に比べ、I/Oピッチを1種類だけ用意すればよくなり、開発コストが低減されるという効果も得られる。   As a result, compared to the case where a plurality of pad pitches (for example, 30 μm, 40 μm, 60 μm, and 120 μm) are supported by one type of I / O pitch, there is no useless I / O block arrangement area 2 and the manufacturing cost is reduced. There is an effect that you can do it. Also, as compared to the case where a plurality of types of I / O blocks 4 having the same I / O pitch as the pad pitch are prepared for each pad pitch, only one type of I / O pitch needs to be prepared. The effect of reducing is also obtained.

図2は第1の実施の形態の半導体集積回路1における複数のパッドピッチ(等価ピッチ、例えば、30μm,40μm,60μm,120μm)に対応するI/Oブロック4の配置図である。   FIG. 2 is a layout diagram of the I / O block 4 corresponding to a plurality of pad pitches (equivalent pitches, for example, 30 μm, 40 μm, 60 μm, and 120 μm) in the semiconductor integrated circuit 1 of the first embodiment.

図2に示すように、例えば、30μm,40μm,60μm,120μmの4種類のパッドピッチ(等価ピッチ)に対応する場合、I/Oブロック4のX方向(紙面左右方向)のサイズ(単位ピッチ)は、120μmがこれらの整数倍となる条件を満たし、内部回路(不図示)とI/Oブロック4、I/Oブロック4とパッド5をそれぞれ接続する配線は、希望する最小パッドピッチ(等価ピッチ)である30μmで配置できる寸法とし、それらの配線のX方向(紙面左右方向)における中心位置を一致させ、そのI/Oブロック4をそれぞれ希望する30μm,40μm,60μm,120μmのパッドピッチ(等価ピッチ)ずつX方向(紙面左右方向)にずらして、I/Oブロック4の単位ピッチ(I/Oピッチ)をパッドピッチ(等価ピッチ)で割った段数だけ縦積みに配置した構成になっている。   As shown in FIG. 2, for example, when corresponding to four types of pad pitches (equivalent pitch) of 30 μm, 40 μm, 60 μm, and 120 μm, the size (unit pitch) of the I / O block 4 in the X direction (left and right direction on the paper surface) Satisfies the condition that 120 μm is an integral multiple of these, and the wiring connecting the internal circuit (not shown) and the I / O block 4 and the I / O block 4 and the pad 5 respectively has a desired minimum pad pitch (equivalent pitch). ) Which can be arranged at 30 μm, and the center positions of those wirings in the X direction (left and right direction on the paper) are made to coincide, and the I / O block 4 has a desired pad pitch of 30 μm, 40 μm, 60 μm and 120 μm (equivalent) The unit pitch (I / O pitch) of the I / O block 4 is changed to the pad pitch (equivalent pitch) by shifting the pitch in the X direction (left and right direction on the paper). It has a configuration which is arranged in the divided by number only vertically stacked with.

以上説明したように第1の実施の形態のI/Oブロック配置構成は、1種類のI/OピッチのI/Oブロック4を用意するだけで、複数のパッドピッチ(例えば、30μm,40μm,60μm,120μm)に対応でき、以下の効果をもたらす。   As described above, the I / O block arrangement configuration of the first embodiment requires only a plurality of pad pitches (for example, 30 μm, 40 μm, etc.) by preparing the I / O block 4 having one type of I / O pitch. 60 μm, 120 μm), and the following effects are brought about.

まず第1の効果は、実施の形態に示した4種類のI/Oピッチ(例えば、120μm,60μm,40μm,30μmの4種類のI/Oピッチ)に対応する際、1つのI/Oで対応した場合に、無駄な領域がなくなる(例えば、I/Oブロック配置領域2の無駄な領域が3/4から0となる)ので、製造コストを低減できることである。   First, when the first effect corresponds to the four types of I / O pitches shown in the embodiment (for example, four types of I / O pitches of 120 μm, 60 μm, 40 μm, and 30 μm), one I / O is used. If this is the case, the useless area is eliminated (for example, the useless area of the I / O block arrangement area 2 is changed from 3/4 to 0), so that the manufacturing cost can be reduced.

従来、1つのI/Oピッチで4種類のパッドピッチ(例えば、120μm,60μm,40μm,30μmの4種類のパッドピッチ)に対応する際、1つのI/Oピッチで4種類のパッドピッチ(例えば、120μm,60μm,40μm,30μmの4種類のパッドピッチ)に対応する場合には、最もピッチの小さい30μm(すなわち、高さがもっとも高いI/Oピッチ)を用いて全てのパッドピッチに対応するしかない。つまり、120μmのパッドピッチに対応する場合には、30μmピッチのI/Oを4つならべて、1つだけを使うことになり、3つのI/O(換言すれば、3/4)が無駄な領域となっていた。   Conventionally, when dealing with four types of pad pitches (for example, four types of pad pitches of 120 μm, 60 μm, 40 μm, and 30 μm) with one I / O pitch, four types of pad pitches (for example, with one I / O pitch) , 120 μm, 60 μm, 40 μm, and 30 μm), the minimum pitch of 30 μm (that is, the highest I / O pitch) is used for all pad pitches. There is only. In other words, when dealing with a 120 μm pad pitch, four I / Os with a 30 μm pitch are used, and only one is used, so three I / Os (in other words, 3/4) are wasted. It was a real territory.

そして第2の効果は、パッドピッチ分のI/Oで対応した場合に、対応ピッチ種類分だけI/Oピッチを用意する必要がなくなり、I/Oピッチを1種類のみで済ませることができるようになり、その結果、開発工数を低減できることである。   The second effect is that when the I / O for the pad pitch is used, it is not necessary to prepare I / O pitches for the corresponding pitch types, and only one type of I / O pitch can be used. As a result, the development man-hours can be reduced.

従来、4種類のパッドピッチ(例えば、120μm,60μm,40μm,30μmの4種類のパッドピッチ)に対して、それぞれ同じI/Oピッチ(例えば、120μm,60μm,40μm,30μmの4種類のI/Oピッチ)のI/Oブロック4を開発して対応する場合、4種類のI/Oブロック4を開発する必要があった。しかしながら、本実施の形態のI/Oブロック配置構成によれば、1種類で全て対応可能になる。その結果、開発工数が1/4となる。   Conventionally, for four types of pad pitches (for example, four types of pad pitches of 120 μm, 60 μm, 40 μm, and 30 μm), the same I / O pitch (for example, four types of I / Os of 120 μm, 60 μm, 40 μm, and 30 μm). When the I / O block 4 of O pitch) is developed and handled, it is necessary to develop four types of I / O blocks 4. However, according to the I / O block arrangement configuration of the present embodiment, all can be handled by one type. As a result, the development man-hour becomes 1/4.

(第2の実施の形態)以下、本発明の第2の実施の形態を図面に基づいて詳細に説明する。なお、上記第1の実施の形態において既に記述したものと同一の部分については、同一符号を付し、重複した説明は省略する。図3は本発明の第2の実施の形態に係る半導体集積回路1のI/Oブロック4の配置図である。   (Second Embodiment) Hereinafter, a second embodiment of the present invention will be described in detail with reference to the drawings. Note that the same parts as those already described in the first embodiment are denoted by the same reference numerals, and redundant description is omitted. FIG. 3 is a layout diagram of the I / O block 4 of the semiconductor integrated circuit 1 according to the second embodiment of the present invention.

本実施の形態の半導体集積回路1は、その基本的構成は上記第1の実施の形態と同様であるが、I/Oブロック4の寸法(I/Oピッチ)と希望するパッドピッチの関係についてさらに工夫している。   The basic configuration of the semiconductor integrated circuit 1 of the present embodiment is the same as that of the first embodiment, but the relationship between the dimensions of the I / O block 4 (I / O pitch) and the desired pad pitch. Further devised.

その構成を図3に示す。すなわち、図3に示すように、I/Oブロック4のサイズ(図では120μm)を、希望するパッドピッチ(図では80μm)の整数倍としないようなI/Oブロック配置構成を有する点に特徴を有している。   The configuration is shown in FIG. That is, as shown in FIG. 3, the I / O block 4 size (120 μm in the figure) has an I / O block arrangement configuration that does not make it an integral multiple of the desired pad pitch (80 μm in the figure). have.

例えば希望する複数のパッドピッチが30μm,40μm,60μm,80μm,120μmの5種類であった場合、I/Oブロック4のX方向(紙面左右方向)のサイズは、240μmがこれらの整数倍となる条件を満たすが、I/Oブロック4を構成する上での他の制約により240μmを実現できない場合、本図のように120μmのI/Oブロック4を2段の80μmピッチで実現している。   For example, when there are five types of desired pad pitches of 30 μm, 40 μm, 60 μm, 80 μm, and 120 μm, the size of the I / O block 4 in the X direction (left and right direction on the paper surface) is 240 μm which is an integral multiple of these. If the condition is satisfied but 240 μm cannot be realized due to other restrictions on the construction of the I / O block 4, the 120 μm I / O block 4 is realized with two stages of 80 μm pitch as shown in FIG.

以上説明したように第2の実施の形態によれば、希望するI/O数に応じパッドピッチが選択でき、かつ希望するI/O数に応じ無駄なくI/Oブロック配置領域2が変化する場合に1種類のI/OピッチのI/Oブロック4で実現できるようになるといった効果を奏する。   As described above, according to the second embodiment, the pad pitch can be selected according to the desired number of I / Os, and the I / O block arrangement area 2 changes without waste according to the desired number of I / Os. In such a case, there is an effect that it can be realized by the I / O block 4 having one kind of I / O pitch.

(第3の実施の形態)以下、本発明の第3の実施の形態を図面に基づいて詳細に説明する。なお、上記第1の実施の形態または第2の実施の形態において既に記述したものと同一の部分については、同一符号を付し、重複した説明は省略する。図4は本発明の第3の実施の形態に係る半導体集積回路1のI/Oブロック4の配置図である。   (Third Embodiment) Hereinafter, a third embodiment of the present invention will be described in detail with reference to the drawings. In addition, the same code | symbol is attached | subjected about the part same as what was already described in the said 1st Embodiment or 2nd Embodiment, and the overlapping description is abbreviate | omitted. FIG. 4 is a layout diagram of the I / O block 4 of the semiconductor integrated circuit 1 according to the third embodiment of the present invention.

本実施の形態の半導体集積回路1は、その基本的構成は上記第1の実施の形態と同様であるが、パッドピッチが一定でない場合に適用できるようなI/Oブロック配置構成を設けている点に特徴を有している。その構成を図4に示す。すなわち、図4に示すように、30μmと60μmの両方のパッドピッチに対応できるようにI/Oブロック4を配置している。   The basic structure of the semiconductor integrated circuit 1 of the present embodiment is the same as that of the first embodiment, but an I / O block arrangement configuration that can be applied when the pad pitch is not constant is provided. It is characterized by a point. The configuration is shown in FIG. That is, as shown in FIG. 4, the I / O block 4 is arranged so as to be able to cope with both 30 μm and 60 μm pad pitches.

以上説明したように第3の実施の形態によれば、希望するI/O数に応じパッドピッチが選択でき、かつ希望するI/O数に応じ無駄なくI/Oブロック配置領域2が変化する場合に1種類のI/OピッチのI/Oブロック4で実現できるようになるといった効果を奏する。   As described above, according to the third embodiment, the pad pitch can be selected according to the desired number of I / Os, and the I / O block arrangement area 2 changes without waste according to the desired number of I / Os. In such a case, there is an effect that it can be realized by the I / O block 4 having one kind of I / O pitch.

なお、本発明が上記各実施の形態に限定されず、本発明の技術思想の範囲内において、上記各実施の形態は適宜変更され得ることは明らかである。また上記構成部材の数、位置、形状等は上記各実施の形態に限定されず、本発明を実施する上で好適な数、位置、形状等にすることができる。また、各図において、同一構成要素には同一符号を付している。   Note that the present invention is not limited to the above-described embodiments, and it is obvious that the above-described embodiments can be appropriately changed within the scope of the technical idea of the present invention. In addition, the number, position, shape, and the like of the constituent members are not limited to the above embodiments, and can be set to a number, position, shape, and the like that are suitable for carrying out the present invention. Moreover, in each figure, the same code | symbol is attached | subjected to the same component.

1…半導体集積回路
2…I/Oブロック配置領域
3…内部領域
4…I/Oブロック
5…パッド
6…配線群
7…配線
DESCRIPTION OF SYMBOLS 1 ... Semiconductor integrated circuit 2 ... I / O block arrangement | positioning area | region 3 ... Internal area | region 4 ... I / O block 5 ... Pad 6 ... Wiring group 7 ... Wiring

Claims (4)

多ピンに対応可能なI/Oブロック配置領域の部分において、I/Oブロックの寸法、パッドピッチ、及びI/Oへの配線の各寸法に規則性を持たせるとともに、複数の前記パッドピッチを設定し、中央に内部領域が設けられ、周辺に前記I/Oブロック配置領域が設けられ、前記I/Oブロック配置領域の更に外側にパッドが設けられるという構成に対し、前記I/Oブロックの前記X方向の寸法を複数の前記パッドピッチの整数倍としたI/Oブロック配置構成を有し、
前記複数のパッドピッチの整数倍となる値が予め設定された制約値よりも大きな場合、前記I/Oブロックの前記X方向の寸法は、前記制約値内であって、複数の前記パッドピッチの一部を除くパッドピッチの整数倍に設定され、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当する第1のパッドピッチと、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当しない第2のパッドピッチと、が生成され、前記第2のパッドピッチに対応して設けられるI/Oブロックは、前記X方向に隣接する他のI/Oブロックとの間に間隔を有することを特徴とする半導体集積回路。
In the portion of the I / O block arrangement area that can accommodate multiple pins, the I / O block dimensions, the pad pitch, and the wiring dimensions to the I / O have regularity, and a plurality of the pad pitches are set. In contrast to the configuration in which an internal area is provided in the center, the I / O block arrangement area is provided in the periphery, and a pad is provided further outside the I / O block arrangement area, An I / O block arrangement configuration in which the dimension in the X direction is an integer multiple of the plurality of pad pitches,
When a value that is an integral multiple of the plurality of pad pitches is larger than a preset constraint value, the dimension of the I / O block in the X direction is within the constraint value, and is a plurality of pad pitches. A first pad pitch that is set to an integral multiple of the pad pitch excluding a part, the integral multiple of the pad pitch corresponds to the dimension in the X direction of the I / O block, and an integral multiple of the pad pitch is the I / O block And a second pad pitch not corresponding to the dimension in the X direction is generated, and an I / O block provided corresponding to the second pad pitch is different from other I / O blocks adjacent in the X direction. A semiconductor integrated circuit having a space between
前記第1のパッドピッチの数は、前記第2のパッドピッチの数よりも多い請求項1に記載の半導体集積回路。   The semiconductor integrated circuit according to claim 1, wherein the number of the first pad pitches is larger than the number of the second pad pitches. 多ピンに対応可能な半導体集積回路のI/Oブロック配置領域の部分において、I/Oブロックの寸法、パッドピッチ、及びI/Oへの配線の各寸法に規則性を持たせる工程と、複数のパッドピッチを設定する工程と、半導体集積回路の中央に内部領域を設ける工程と、前記半導体集積回路の周辺に前記I/Oブロック配置領域を設ける工程と、前記I/Oブロック配置領域の更に外側にパッドを設ける工程と、前記I/Oブロックの寸法を複数の前記パッドピッチの整数倍とする工程を有し、
前記I/Oブロックの寸法を設定する工程は、前記複数のパッドピッチの整数倍となる値が予め設定された制約値よりも大きな場合、前記I/Oブロックの前記X方向の寸法を、前記制約値内であって、複数の前記パッドピッチの一部を除くパッドピッチの整数倍に設定し、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当する第1のパッドピッチと、パッドピッチの整数倍が前記I/OブロックのX方向の寸法に該当しない第2のパッドピッチと、を生成し、前記第2のパッドピッチに対応して設けられるI/Oブロックを、前記X方向に隣接する他のI/Oブロックとの間に間隔を空けて配置することを特徴とするI/Oブロック配置方法。
A step of providing regularity to the dimensions of the I / O block, the pad pitch, and the wiring to the I / O in the portion of the I / O block arrangement region of the semiconductor integrated circuit that can accommodate multiple pins, A step of setting the pad pitch of the semiconductor integrated circuit, a step of providing an inner region in the center of the semiconductor integrated circuit, a step of providing the I / O block arrangement region around the semiconductor integrated circuit, and a further step of the I / O block arrangement region. A step of providing pads on the outside, and a step of setting the dimensions of the I / O block to be an integer multiple of the plurality of pad pitches,
In the step of setting the dimension of the I / O block, when a value that is an integral multiple of the plurality of pad pitches is larger than a preset constraint value, the dimension of the I / O block in the X direction is A first pad pitch that is within a constraint value and is set to an integral multiple of the pad pitch excluding a part of the plurality of pad pitches, and the integral multiple of the pad pitch corresponds to the dimension in the X direction of the I / O block. A second pad pitch in which an integral multiple of the pad pitch does not correspond to a dimension in the X direction of the I / O block, and an I / O block provided in correspondence with the second pad pitch, A method of arranging an I / O block, characterized in that the I / O block is arranged with a space between other I / O blocks adjacent in the X direction.
前記第1のパッドピッチの数を、前記第2のパッドピッチの数よりも多く設定する工程を有することを特徴とする請求項3に記載のI/Oブロック配置方法。   4. The I / O block arrangement method according to claim 3, further comprising the step of setting the number of the first pad pitches to be larger than the number of the second pad pitches.
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