JP2010280955A - Plated connecting terminal member, connecting terminal using the same, plated material and multilayer plated material used for the same and method of manufacturing plated connecting terminal member - Google Patents

Plated connecting terminal member, connecting terminal using the same, plated material and multilayer plated material used for the same and method of manufacturing plated connecting terminal member Download PDF

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JP2010280955A
JP2010280955A JP2009135575A JP2009135575A JP2010280955A JP 2010280955 A JP2010280955 A JP 2010280955A JP 2009135575 A JP2009135575 A JP 2009135575A JP 2009135575 A JP2009135575 A JP 2009135575A JP 2010280955 A JP2010280955 A JP 2010280955A
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plating layer
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JP4632380B2 (en
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Kinya Sugie
欣也 杉江
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Kanzacc Co Ltd
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Kyowa Electric Wire Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a connecting terminal member capable of suppressing or preventing the occurrence of whisker while suppressing the quantity of a rare metal to be used and improving both of solderability (wettability) to lead-free solder and slidability. <P>SOLUTION: The connecting terminal member is formed by reflowing a multilayer plated material having a first plating layer comprising tin or a tin alloy on the outside of the conductive base material and a second plating layer comprising indium on the first plating layer. The thickness of the first plating layer in a connection/disconnection part of the connecting terminal member is controlled to 0.3-3 μm, the thickness in the soldered part of the connecting terminal member is controlled to be thicker than that of the connection/disconnection part and the thickness of the second plating layer is controlled to 0.05-0.2 μm. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、鉛を含まないめっき被膜を有する接続端子部材、これを用いた接続端子、これに用いられるめっき被膜材及び多層めっき材料、並びにめっき被膜接続端子部材の製造方法に関する。   The present invention relates to a connection terminal member having a lead-free plating film, a connection terminal using the same, a plating film material and a multilayer plating material used therefor, and a method for manufacturing a plating film connection terminal member.

電気的な接続の目的で使用される接続端子には、車載用端子からプリント回路基板に使われるコネクタ端子(以下PCB端子)にいたるまで様々な用途のものがあり、そのそれぞれに適合した機能が要求される。図12には、PCB端子を模式化して示した断面図を示す。このPCB端子100は雄端子50及び雌端子60で構成され、各端子の筐体55,65にはそれぞれ雄端子部材51及び雌端子部材61が挿設されている。この雌端子60を全体として矢印(S)の方向に移動させて雄端子55の受口54に挿入すると、逆に針状の雄部材の挿抜部51aが筒状の雌部材に挿入され、電気的な接続状態が得られる。
端子部材の構造について雄端子部材51に基づいて詳しく説明する。該端子部材51は、TAB(Tape Automated Bonding[テープ・オートメイテッド・ボンディング])側で相手側の雌材と嵌合する挿抜部51aと、PCB側ではんだ付けされるはんだ付け部51bとを有する。このはんだ付け部51bでリード線52の導線と接続され、把持部53で固定された部分を介して端子の外方に延出し、該リード線がプリント回路基板へとつなげられる。このようなPCB端子の端子部材としては、黄銅等の銅合金を母材とし、この表面にスズめっき層を形成したものが一般的である。このようにスズめっきを施すことにより、電気接触部の嵌合側では、低い接触抵抗で摺動性の良いものとすることができ、さらに表面に耐食性を付与することができる。一方、はんだ付け部では良好なはんだ付け性を実現することができる。
There are various types of connection terminals used for electrical connection, ranging from in-vehicle terminals to connector terminals (hereinafter referred to as PCB terminals) used for printed circuit boards. Required. FIG. 12 is a cross-sectional view schematically showing the PCB terminal. The PCB terminal 100 includes a male terminal 50 and a female terminal 60, and a male terminal member 51 and a female terminal member 61 are inserted into housings 55 and 65 of the respective terminals. When the female terminal 60 is moved in the direction of the arrow (S) as a whole and inserted into the receiving port 54 of the male terminal 55, the needle-shaped male member insertion / extraction portion 51a is inserted into the cylindrical female member. Connection state can be obtained.
The structure of the terminal member will be described in detail based on the male terminal member 51. The terminal member 51 has an insertion / extraction part 51a that fits with a mating female member on the TAB (Tape Automated Bonding) side, and a soldering part 51b that is soldered on the PCB side. . The soldering portion 51b is connected to the lead wire 52 and extends to the outside of the terminal through the portion fixed by the grip portion 53, and the lead wire is connected to the printed circuit board. As a terminal member of such a PCB terminal, one in which a copper alloy such as brass is used as a base material and a tin plating layer is formed on the surface is generally used. By applying tin plating in this way, on the mating side of the electrical contact portion, it is possible to provide a low contact resistance and good slidability, and further to impart corrosion resistance to the surface. On the other hand, good solderability can be realized at the soldering portion.

近年、PCB端子の小型化及び接続端子部(ピン)数の高密度化に対する要求が高まっており、その対応として接続する際の挿入力を小さくすることが求められる。しかし、上述したようなスズめっきによるものでは、スズが軟質金属であるため挿入時に容易に塑性変形してしまい、その変形部が挿入時の抵抗となりかえって嵌合に大きな挿入力が必要となることがある。そこでスズめっき層の厚さを薄くすることが考えられる。しかし、これは通常はんだ付け性の低下をまねく。   In recent years, there has been an increasing demand for downsizing of the PCB terminal and high density of the number of connection terminal portions (pins), and as a countermeasure, it is required to reduce the insertion force when connecting. However, in the case of tin plating as described above, tin is a soft metal, so plastic deformation easily occurs at the time of insertion, and the deformed portion becomes resistance at the time of insertion, and a large insertion force is required for fitting. There is. Therefore, it is conceivable to reduce the thickness of the tin plating layer. However, this usually leads to a decrease in solderability.

さらに、スズめっき層はその内部応力や下地を含む基材金属の拡散等によりウィスカが発生しやすいという問題がある。ひとたびウィスカが発生し別の導電性部材等と電気的に接触するようなことがおこれば、短絡をおこしデバイスの動作に影響することはもとより、電子素子や半導体に重大な影響を与えることともなりかねない。この対策として、スズめっきを施した後にリフロー処理することが提案されている。また、上述したようなPCB端子において、特にファインピッチのものについては金めっきが使用されている。言うまでもなく、このような高価な金属の使用量を極力低減することが望まれる。   Further, the tin plating layer has a problem that whiskers are easily generated due to internal stress, diffusion of a base metal including a base, or the like. Once a whisker occurs and comes into electrical contact with another conductive member, etc., it may cause a short circuit and affect the operation of the device, as well as seriously affect electronic elements and semiconductors. It can be. As a countermeasure, it has been proposed to perform a reflow treatment after tin plating. Further, in the PCB terminal as described above, gold plating is used particularly for the fine pitch. Needless to say, it is desirable to reduce the amount of such expensive metals used as much as possible.

ところで、近年はんだ材料の成分が大きく変わった。従来、63Sn−37Pb(スズ−鉛)はんだが汎用されていたが、廃棄物処理法などの環境関連法規制により、鉛は特別管理物質に指定されているなど環境への影響が懸念されており、鉛を含まないはんだ(鉛フリーはんだ)への移行が急速に進んでいる。これに対応するために、鉛を含まないものを適用することが求められている。その上で上述したような摺動性及びはんだ付け性といった相反する特性の両立に加え、ウィスカの発生防止を実現しなければならず、これらを同時に満足する技術の開発は一層困難なものとなっている。   By the way, in recent years, the composition of solder materials has changed significantly. Conventionally, 63Sn-37Pb (tin-lead) solder has been widely used, but due to environmental regulations such as the Waste Disposal Act, there is concern about the impact on the environment, such as lead being designated as a special management substance. The transition to lead-free solder (lead-free solder) is rapidly progressing. In order to cope with this, it is required to apply a lead-free material. In addition to the conflicting characteristics such as slidability and solderability as described above, whisker generation must be prevented, and the development of technology that satisfies these requirements becomes more difficult. ing.

特許文献1はスズめっきの上にインジウムめっきを施したものを開示する。これにより外観とはんだ付け性が良好となるとされる。また、特許文献2はスズの電気めっき層の上に銀、ビスマス、銅、インジウム、又は亜鉛の電気めっき層を施したものを開示し、これにより、摺動性、はんだ付け性、耐食性を改善しうるとされる。   Patent document 1 discloses what tin-plated and indium-plated. As a result, the appearance and solderability are improved. Patent Document 2 discloses a silver electroplating layer of silver, bismuth, copper, indium, or zinc on a tin electroplating layer, thereby improving slidability, solderability, and corrosion resistance. It can be done.

特開平11−279791号公報Japanese Patent Laid-Open No. 11-279791 特開2002−317295号公報JP 2002-317295 A

本件発明者らは、上述のような摺動性の向上とはんだ付け性の向上とを両立するために、1つの端子部材において挿抜部とはんだ付け部とでスズめっき層の厚さを異ならせる差厚めっきの利用を検討した。しかし鉛を含まないめっき層においてこれを実現するためにスズの層とスズ以外の金属材料の層とを組み合わせて用いるとき、差厚めっきされたものの摺動性とはんだ付け性の両立は困難であると考えられる。特に、リフロー処理をした場合、上記複数の金属は層内で合金化し場所による厚さの差により合金組成に差が生じることが考えられ、その特性の予測及び制御は一層難しくなる。   In order to achieve both the improvement in slidability and the improvement in solderability as described above, the present inventors vary the thickness of the tin plating layer between the insertion / extraction portion and the soldering portion in one terminal member. The use of differential thickness plating was studied. However, when using a combination of a tin layer and a metal material layer other than tin in order to achieve this in a lead-free plating layer, it is difficult to achieve both slidability and solderability of the difference thickness plating. It is believed that there is. In particular, when the reflow treatment is performed, it is considered that the plurality of metals are alloyed in the layer and a difference in the alloy composition is caused due to a difference in thickness depending on the location, and prediction and control of the characteristics become more difficult.

さらに本発明者らは、上述した各特性の良化とともにPCB端子用の端子部材を始めとしためっき被膜接続端子部材において、これを長期間使用したときのはんだ接合部の疲労耐久性をも向上することに着目した。その背景として例えば、車載用の接続端子はもとよりPCB端子のような微細なものにしてみても、近年、自動車や鉄道等の移動手段に搭載される複雑かつ高度な制御システムに組み込まれてきている。これをうけ、接続端子は微小化・精密化されながら、しかもその使用条件は動的なものとなっている。また、静的に使用される大型コンピュータやパーソナルコンピュータであっても疲労耐久性が必要ないとはいえない。コンピュータの内部、とくに内蔵されるCPU(中央処理装置)の周辺はかなりの高温になり、この使用時の温度の上昇と非使用時の徐冷とが日常頻繁に繰り返される。すると、端子接合部は熱の上昇・下降をうけ膨張と収縮とを繰り返し、亀裂の原因となるような歪を徐々に蓄積していくことが考えられる。用途によっては、長期間使用したときにもそのような亀裂破損等を生じない、十分に余裕をみた設計が求められる。   Furthermore, the present inventors improve the fatigue durability of the solder joint when using the plating film connecting terminal member including the terminal member for PCB terminal for a long period of time as well as improving the above-mentioned characteristics. Focused on doing. As its background, for example, even if it is made as fine as a PCB terminal as well as an in-vehicle connection terminal, it has recently been incorporated into a complicated and advanced control system mounted on a moving means such as an automobile or a railway. . As a result, the connection terminals are miniaturized and refined, and the usage conditions are dynamic. Further, it cannot be said that fatigue durability is not necessary even for a large computer or a personal computer used statically. The inside of a computer, particularly the periphery of a built-in CPU (central processing unit), becomes considerably hot, and this increase in temperature during use and slow cooling when not in use are frequently repeated daily. Then, it is conceivable that the terminal joint portion repeatedly expands and contracts as the heat rises and falls, and gradually accumulates strain that causes cracks. Depending on the application, there is a need for a design with sufficient margin that does not cause such crack breakage when used for a long period of time.

本発明は、上述したような鉛を含まないめっき被膜に求められる特有の課題に鑑み、コストが高くまた将来的な入手困難性も指摘されるレアメタルの使用量を抑えつつ、鉛フリーはんだに対するはんだ付け性(濡れ性)及び摺動性を両立して向上し、しかもウィスカの発生を抑制ないし防止することができるめっき被膜を有する接続端子部材の提供を目的とする。また、上記の良好な特性とともにはんだ付け温度を低減し、しかも疲労耐久性に優れるめっき被膜接続端子部材、それを用いた接続端子、及びそれに用いられるめっき被膜材、多層めっき材料の提供を目的とし、さらにその製造に特に適しためっき被膜接続端子部材の製造方法の提供を目的とする。   In view of the specific problems required for a plating film containing no lead as described above, the present invention suppresses the amount of rare metal used that is costly and also points to difficulty in obtaining the future, and solder for lead-free solder. It is an object of the present invention to provide a connection terminal member having a plating film that can improve both attachment properties (wetting properties) and slidability and can suppress or prevent the generation of whiskers. Another object of the present invention is to provide a plating film connection terminal member that reduces the soldering temperature with the above-mentioned good characteristics and has excellent fatigue durability, a connection terminal using the same, a plating film material used therefor, and a multilayer plating material. Furthermore, it aims at providing the manufacturing method of the plating film connection terminal member especially suitable for the manufacture.

上記の課題は下記の手段により解決された。
(1)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなる接続端子部材であって、
前記第1めっき層について、前記接続端子部材の挿抜部における厚さを0.3〜3μmとし、前記接続端子部材のはんだ付け部における厚さを前記挿抜部の厚さより厚くし、
前記第2めっき層の厚さを0.05〜0.2μmとしたことを特徴とするめっき被膜接続端子部材。
(2)前記リフロー処理により、前記第2めっき層のインジウムの濃度がめっき表面側から導電性基材側にむけ傾斜的に減少するようにしたことを特徴とする(1)に記載の接続端子部材。
(3)前記第1めっき層と前記導電性基材との間に、ニッケルまたはニッケル合金からなる下地めっき層が介在されている(1)又は(2)に記載の接続端子部材。
(4)前記第1めっき層と前記導電性基材との間に、銅または銅合金からなる下地めっき層が介在されている(1)〜(3)のいずれか1項に記載の接続端子部材。
(5)前記第2めっき層の厚さが前記挿抜部及び前記はんだ付け部において均一にされたことを特徴とする(1)〜(4)のいずれか1項に記載の接続端子部材。
(6)前記第1めっき層が、スズ、スズ−銀合金、スズ−ビスマス合金、スズ−銅合金、及びスズ−銀−銅合金の群から選ばれる少なくとも1種からなることを特徴とする(1)〜(5)のいずれか1項に記載の接続端子部材。
(7)前記第1めっき層の前記挿抜部における厚さが1.5μm以上であることを特徴とする(1)〜(6)のいずれか1項に記載の接続端子部材。
(8)前記第1めっき層の前記挿抜部の厚さ(Ts)と前記はんだ付け部との厚さ(Th)の差(Td=Th−Ts)を1.0〜2.7μmとしたことを特徴とする(1)〜(7)のいずれか1項に記載の接続端子部材。
(9)(1)〜(8)のいずれか1項に記載の接続端子部材を具備する接続端子。
(10)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなるめっき被膜材であって、前記第1めっき層の厚さを0.3〜3μmとし、第2めっき層の厚さを0.05〜0.2μmとしたことを特徴とする接続端子用めっき被膜材。
(11)前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とする(10)に記載のめっき被膜材。
(12)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料であって、前記第1めっき層の厚さを0.3〜3μmとし、前記第2めっき層の厚さを0.05〜0.2μmとし、リフローして用いることを特徴とする接続端子用の多層めっき材料。
(13)前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とする(12)に記載の多層めっき材料
(14)導電性基材の外側に、スズもしくはスズ合金からなる第1めっき層を形成し、該第1めっき層の表面にインジウムからなる第2めっき層を形成して接続端子部材の多層めっき材料とし、該多層めっき材料をリフローして挿抜部とはんだ付け部とを有する接続端子部材とするに当たり、
前記第1めっき層について、前記挿抜部における厚さを0.3〜3μmとし、かつその前記はんだ付け部における厚さを前記挿抜部の厚さより厚くし、他方、前記第2めっき層の厚さを0.05〜0.2μmとして前記多層めっき材料とし、該多層めっき材料をリフローして接続端子部材とすることを特徴とするめっき被膜接続端子部材の製造方法。
The above problems have been solved by the following means.
(1) A connection terminal obtained by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer A member,
For the first plating layer, the thickness at the insertion / extraction part of the connection terminal member is 0.3 to 3 μm, and the thickness at the soldering part of the connection terminal member is thicker than the thickness of the insertion / extraction part,
A plating film connection terminal member, wherein the thickness of the second plating layer is 0.05 to 0.2 μm.
(2) The connection terminal according to (1), wherein the concentration of indium in the second plating layer is decreased in an inclined manner from the plating surface side to the conductive substrate side by the reflow treatment. Element.
(3) The connection terminal member according to (1) or (2), wherein a base plating layer made of nickel or a nickel alloy is interposed between the first plating layer and the conductive substrate.
(4) The connection terminal according to any one of (1) to (3), wherein a base plating layer made of copper or a copper alloy is interposed between the first plating layer and the conductive base material. Element.
(5) The connection terminal member according to any one of (1) to (4), wherein the thickness of the second plating layer is uniform in the insertion / extraction portion and the soldering portion.
(6) The first plating layer is made of at least one selected from the group consisting of tin, tin-silver alloy, tin-bismuth alloy, tin-copper alloy, and tin-silver-copper alloy ( The connection terminal member according to any one of 1) to (5).
(7) The connection terminal member according to any one of (1) to (6), wherein a thickness of the insertion / extraction portion of the first plating layer is 1.5 μm or more.
(8) The difference (Td = Th−Ts) between the thickness (Ts) of the insertion / extraction portion of the first plating layer and the thickness (Th) of the soldering portion is set to 1.0 to 2.7 μm. The connection terminal member according to any one of (1) to (7).
(9) A connection terminal comprising the connection terminal member according to any one of (1) to (8).
(10) A plating film obtained by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer. It is a material, Comprising: The thickness of the said 1st plating layer shall be 0.3-3 micrometers, and the thickness of the 2nd plating layer shall be 0.05-0.2 micrometers, The plating film material for connecting terminals characterized by the above-mentioned.
(11) The plating film material according to (10), wherein the first plating layer is provided with a predetermined thickness portion and a thinner portion.
(12) A multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate, and a second plating layer made of indium on the surface of the first plating layer, the first plating layer A multilayer plating material for connection terminals, wherein the plating layer has a thickness of 0.3 to 3 μm and the second plating layer has a thickness of 0.05 to 0.2 μm and is reflowed.
(13) The multilayer plating material according to (12), wherein the first plating layer is provided with a portion having a predetermined thickness and a portion thinner than the predetermined thickness. Forming a first plating layer made of tin or a tin alloy, forming a second plating layer made of indium on the surface of the first plating layer to obtain a multilayer plating material for a connection terminal member, and reflowing the multilayer plating material; In making a connection terminal member having an insertion / extraction part and a soldering part,
About the said 1st plating layer, the thickness in the said insertion / extraction part shall be 0.3-3 micrometers, and the thickness in the said soldering part is made thicker than the thickness of the said insertion / extraction part, On the other hand, the thickness of the said 2nd plating layer 0.05 to 0.2 μm is used for the multilayer plating material, and the multilayer plating material is reflowed to form a connection terminal member.

本発明のめっき被膜接続端子部材は、鉛を含まないめっき被膜を有する端子部材に求められる特有の課題を解決し、コストが高くまた将来的な入手困難性も指摘されるレアメタルの使用量を抑えつつ、鉛フリーはんだに対するはんだ付け性(濡れ性)及び摺動性(挿抜性)の向上はもとより、ウィスカの発生及び成長を抑制・防止するという優れた作用効果を奏する。また、本発明のめっき被膜接続端子部材は、上記の良好な特性とともに、端子部材において求められるはんだ付け温度の低減を実現し、しかも高い疲労耐久性を示す。
本発明のめっき被膜材及び多層めっき材料は上述した端子部材の素材として特に適し、これを用いた端子部材において安定した導通とともに長期間の使用においてもはんだ接合部の破損等を起こさない高い耐久性及びそれに基づく機器の信頼性を実現する。
また、本発明の製造方法によれば、上述した良好な特性を有するめっき被膜接続端子を製造することができる。
The plated film connecting terminal member of the present invention solves the specific problems required for a terminal member having a plated film that does not contain lead, and suppresses the use of rare metals, which are expensive and point out that future availability is pointed out. On the other hand, in addition to improving solderability (wetting properties) and slidability (insertion / removability) with respect to lead-free solder, it has an excellent effect of suppressing and preventing whisker generation and growth. Moreover, the plating film connection terminal member of this invention implement | achieves reduction of the soldering temperature calculated | required in a terminal member with the said favorable characteristic, and also shows high fatigue durability.
The plating film material and the multilayer plating material of the present invention are particularly suitable as a material for the terminal member described above, and the terminal member using the same has high durability that does not cause breakage of the solder joint portion even when used for a long time as well as stable conduction. And the reliability of the equipment based on it.
Moreover, according to the manufacturing method of this invention, the plating film connection terminal which has the above-mentioned favorable characteristic can be manufactured.

本発明のめっき被膜接続端子を構成するめっき被膜接続端子部材の一実施形態についてその一部分の表面を模式的に示す断面図であり、図1(a)がリフロー前、図1(b)がリフロー後の状態を示す。It is sectional drawing which shows typically the surface of the one part about one Embodiment of the plating film connection terminal member which comprises the plating film connection terminal of this invention, Fig.1 (a) is before reflow and FIG.1 (b) is reflow. Shown later. 本発明のめっき被膜接続端子部材の一実施形態を模式的に示す側面図(図2a)と、そのリフロー前のめっき被膜の厚さを示すグラフ(図2b)である。It is the side view (FIG. 2a) which shows typically one Embodiment of the plating film connection terminal member of this invention, and the graph (FIG. 2b) which shows the thickness of the plating film before the reflow. 作製例で得られためっき被膜材(試験体)のスズとインジウムとの傾斜的な濃度分布を示すオージェ分析の結果を示すグラフである。It is a graph which shows the result of the Auger analysis which shows the gradient distribution of tin and indium of the plating film material (test body) obtained by the manufacture example. 作製例で得られた別のめっき被膜材(試験体)のスズとインジウムとの傾斜的な濃度分布を示すオージェ分析の結果を示すグラフである。It is a graph which shows the result of the Auger analysis which shows gradient concentration distribution of the tin and indium of another plating film material (test body) obtained by the manufacture example. 作製例で得られた試験体のはんだ濡れ性試験の結果を示すグラフである。It is a graph which shows the result of the solder wettability test of the test body obtained by the manufacture example. 作製例で得られた試験体のバウデン試験の結果を示すグラフである。It is a graph which shows the result of the Bowden test of the test body obtained by the manufacture example. 作製例で得られた試験体の表面状態を撮影した顕微鏡写真(図面代用写真)である(拡大倍率:100倍)。It is the microscope picture (drawing substitute photograph) which image | photographed the surface state of the test body obtained by the preparation example (magnification: 100 times). 作製例で得られた別の試験体の表面状態を撮影した顕微鏡写真(図面代用写真)である(拡大倍率:100倍)。It is the microscope picture (drawing substitute photograph) which image | photographed the surface state of another test body obtained in the manufacture example (magnification: 100 times). 図9に示した試験体[Sn1.5μm/In0.2μm](2000h)の表面状態を拡大して示した顕微鏡写真(図面代用写真)である。10 is a photomicrograph (drawing substitute photo) showing an enlarged surface state of the specimen [Sn 1.5 μm / In 0.2 μm] (2000h) shown in FIG. 9. 図9に示した試験体[半光沢Sn(1.5μm)](2000h)の表面状態を拡大して撮影した顕微鏡写真(図面代用写真)である。FIG. 10 is a photomicrograph (drawing substitute photo) taken by enlarging the surface state of the specimen [semi-gloss Sn (1.5 μm)] (2000 h) shown in FIG. 9. めっき被膜材(試験体)の疲労寿命評価試験の方法を模式化して説明するための斜視図である。It is a perspective view for demonstrating schematically the method of the fatigue life evaluation test of a plating film material (test body). PCB端子の一般的な構造を模式的に示す一部断面図である。It is a partial sectional view showing typically the general structure of a PCB terminal.

本発明のめっき被膜接続端子に用いることができる導電性基材の材料、形状は特に限定されず、通常の半導体装置に用いられる材料、形状のものを用いることができる。具体的には少なくともその表面が導電性を有する材料であればよく、例えば、銅、鉄、ニッケル、アルミニウム、及びこれらの組み合せによる基材などをあげることができる。目的や用途に応じて適宜に選定することができ、中でも接続端子としての使用を考慮すると、少なくとも表面の構成材料は銅単体、銅合金、ステンレス、鉄系合金などが好ましい。導電性基材の形状は特に限定されないが、接続端子としての使用を考慮すると導電性基材の形状は、平板条やプレス済条が好ましい。   There are no particular limitations on the material and shape of the conductive substrate that can be used for the plating film connection terminal of the present invention, and materials and shapes that are used in ordinary semiconductor devices can be used. Specifically, it is sufficient that at least the surface of the material has conductivity. Examples thereof include copper, iron, nickel, aluminum, and a base material formed by a combination thereof. It can be selected appropriately according to the purpose and application, and considering the use as a connection terminal, at least the surface constituent material is preferably a simple copper, copper alloy, stainless steel, iron-based alloy or the like. The shape of the conductive substrate is not particularly limited, but considering the use as a connection terminal, the shape of the conductive substrate is preferably a flat strip or a pressed strip.

本発明において第1めっき層はスズもしくはスズ合金からなり、好ましくは、スズ(Sn)、スズ(Sn)−銀(Ag)合金、スズ(Sn)−ビスマス(Bi)合金、スズ(Sn)−銅(Cu)合金、及びスズ(Sn)−銀(Ag)−銅(Cu)合金の群から選ばれる少なくとも1種からなる。ここで、各金属ないし合金の融点は以下のとおりであり、後述するリフロー処理温度やインジウムの融点との関係で適用する材料を選定してもよい。なかでも、第1めっき層を構成する材料は、スズ、スズ−銀合金、スズ−ビスマス合金、又はスズ−銀−銅合金が好ましく、スズ又はスズ−銀合金がより好ましい。スズ単体の融点は231.9℃、スズ−3質量%銀合金は220℃、スズ−5質量%ビスマス合金は227℃、スズ−0.7質量%銅合金は227℃、スズ−3質量%銀−0.5質量%銅合金の融点は219℃である。スズ−銀合金の場合は銀含有量の上限値を4質量%とすることが好ましい。スズ−ビスマス合金の場合はビスマス含有量の上限値を5質量%とすることが好ましい。スズ−銅合金の場合は銅の含有量の上限値を1質量%とすることが好ましい。これらの合金において上記上限値の範囲内であると、クラックの抑制性やはんだ濡れ性が高まり好ましい。また、第2めっき層を構成するインジウムは、その融点が低く(156℃)、膜厚を細かく制御する目的から、第1めっき層の材料や厚さをそのばらつきの影響を打ち消すことができる範囲で適宜選定・調節することが好ましい。   In the present invention, the first plating layer is made of tin or a tin alloy, and preferably tin (Sn), tin (Sn) -silver (Ag) alloy, tin (Sn) -bismuth (Bi) alloy, tin (Sn)- It consists of at least 1 sort (s) chosen from the group of a copper (Cu) alloy and a tin (Sn) -silver (Ag) -copper (Cu) alloy. Here, the melting point of each metal or alloy is as follows, and the material to be applied may be selected in relation to the reflow processing temperature described later and the melting point of indium. Especially, the material which comprises a 1st plating layer has preferable tin, a tin-silver alloy, a tin-bismuth alloy, or a tin-silver-copper alloy, and a tin or tin-silver alloy is more preferable. The melting point of the simple substance of tin is 231.9 ° C, the tin-3 mass% silver alloy is 220 ° C, the tin-5 mass% bismuth alloy is 227 ° C, the tin-0.7 mass% copper alloy is 227 ° C, the tin-3 mass% The melting point of the silver-0.5 mass% copper alloy is 219 ° C. In the case of a tin-silver alloy, the upper limit of the silver content is preferably 4% by mass. In the case of a tin-bismuth alloy, the upper limit of the bismuth content is preferably 5% by mass. In the case of a tin-copper alloy, the upper limit of the copper content is preferably 1% by mass. In these alloys, it is preferable that the content is within the above-described upper limit range because crack suppression and solder wettability are enhanced. In addition, indium constituting the second plating layer has a low melting point (156 ° C.), and in order to finely control the film thickness, a range in which the influence of the variation in the material and thickness of the first plating layer can be canceled out. It is preferable to select and adjust appropriately.

本発明において、第1めっき層の厚さは0.3〜3μmとされるが、その範囲で使用目的や用途に応じて適宜選択することができる。端子部材に使用したとき挿抜性を考慮したときには、第1めっき層の厚さを0.5〜1.5μmとすることが好ましく、0.5〜1.0μmとすることがより好ましい。さらに、接続端子部材としたときのはんだ付け性を考慮して、はんだ付け部の厚さを1.5〜3.0μmとすることが好ましく、2.0〜3.0μmとすることがより好ましい。挿抜部の第1めっき層の厚さ(Ts)とはんだ付け部の厚さ(Th)との差(差厚Td=Th−Ts)は用途や要求性能等に応じて適宜設定すればよいが、1.0〜2.7μmとすることが好ましい。上記のように挿抜部とはんだ付け部の第1めっき層の厚さに差をもたせることにより、摺動性(挿抜性)とはんだ付け性の両立を実現することができる。   In the present invention, the thickness of the first plating layer is 0.3 to 3 μm, and can be appropriately selected depending on the purpose of use and application within the range. When insertability is taken into account when used for a terminal member, the thickness of the first plating layer is preferably 0.5 to 1.5 μm, and more preferably 0.5 to 1.0 μm. Furthermore, considering the solderability when the connection terminal member is formed, the thickness of the soldered portion is preferably 1.5 to 3.0 μm, and more preferably 2.0 to 3.0 μm. . The difference (thickness difference Td = Th−Ts) between the thickness (Ts) of the first plating layer of the insertion / extraction portion and the thickness (Th) of the soldering portion may be set as appropriate according to the application, required performance, etc. 1.0 to 2.7 μm is preferable. By providing a difference in the thickness of the first plating layer between the insertion / extraction portion and the soldering portion as described above, it is possible to achieve both slidability (insertion / extraction properties) and solderability.

本発明のめっき被膜材において、第2めっき層にはインジウムが用いられる。第2めっき層の厚さは0.05〜0.2μmとされるが、使用目的等に応じて適宜選択することができる。接続端子部材としたときのはんだ付け性や摺動性、さらにはウィスカの抑制性及び耐疲労性等を特に考慮して、その厚さを0.05〜0.1μmとすることが好ましい。上記インジウムめっき層の厚さを上記の下限値以上とすることによりウィスカの発生を顕著に抑え、高い疲労耐久性を発現し、上記上限値以下とすることにより耐熱性が良化し、例えばリフロー時に生じるめっき表面の微細な凹凸も好適に防ぐことができる。さらに、比較的硬度の低い金属であるインジウムの量を上記範囲の少ない量に抑えたことと相俟って、良好な摺動性(挿抜性)を実現することができる。また、これを超えてインジウムの層を厚くするより、むしろ疲労寿命を最大化することができ好ましい。   In the plating film material of the present invention, indium is used for the second plating layer. The thickness of the second plating layer is 0.05 to 0.2 μm, and can be appropriately selected according to the purpose of use. In consideration of solderability and slidability when connecting terminal members, whisker suppression and fatigue resistance, the thickness is preferably 0.05 to 0.1 μm. By making the thickness of the indium plating layer equal to or higher than the above lower limit value, the occurrence of whiskers is remarkably suppressed, high fatigue durability is expressed, and by setting the thickness below the upper limit value, heat resistance is improved, for example, during reflow The fine unevenness | corrugation of the plating surface which arises can also be prevented suitably. Furthermore, in combination with the amount of indium, which is a metal having relatively low hardness, being suppressed to a small amount within the above range, good slidability (insertion / removability) can be realized. Further, it is preferable that the fatigue life can be maximized rather than increasing the thickness of the indium layer beyond this.

本発明においては、前述のとおりめっき表面層側にあるインジウムと基材層側のスズないしスズ合金との厚さを上記範囲に規定したことにより、典型的な鉛フリーはんだであるSn−3Ag−0.5Cuはんだと接合される場合に固液拡散が起こりはんだ濡れ性が高まる。また、表面層側のインジウムは低融点金属であるので、この点も相俟って実装する際のはんだ付け温度を低くすることが可能となる。さらに、本発明によれば、第2めっき層(表面層)のインジウムを0.05〜0.2μmという薄い厚さに抑えながら第1めっき層のスズないしその合金と組み合わせて所望の効果を奏するため、コスト面のみならず、レアメタルであるインジウムの使用量を僅少に抑えることができるという省資源の観点からも利点を有する。   In the present invention, as described above, the thickness of the indium on the plating surface layer side and the tin or tin alloy on the base layer side is defined in the above range, so that Sn-3Ag— which is a typical lead-free solder. When bonded to 0.5 Cu solder, solid-liquid diffusion occurs and solder wettability is enhanced. In addition, since indium on the surface layer side is a low melting point metal, it is possible to reduce the soldering temperature when mounting in combination with this point. Furthermore, according to the present invention, the indium of the second plating layer (surface layer) is suppressed to a thin thickness of 0.05 to 0.2 μm, and the desired effect is obtained by combining with the tin of the first plating layer or an alloy thereof. Therefore, there is an advantage not only in terms of cost but also from the viewpoint of resource saving that the amount of rare metal indium used can be suppressed to a small extent.

本発明においては、上述の利点とともに、さらに第2めっき層を構成するインジウム層を薄層化し、これをリフロー処理することにより傾斜した濃度分布としたことにより特有の作用がもたらされる。
まず、ウィスカの発生を抑制する作用が挙げられる。このように両層の金属が濃度勾配をもって傾斜的に存在することによる相互作用について推定を含めていえば下記のように説明される。すなわち、上記特定の厚さで敷設されたスズもしくはスズ合金層と表面層側のインジウム層とをリフローすることによって、表面相側のインジウムを下地金属側に適度に拡散し傾斜的に配置すると、インジウムのもつ適度なクリープ性が得られ、ウィスカの発生・成長を抑止すると考えられる。つまりスズないしスズ合金層中の内部応力が緩和され、その結果ウィスカの発生が効果的に抑制される。
In the present invention, in addition to the above-described advantages, the indium layer constituting the second plating layer is further thinned, and a reflow treatment is performed to obtain an inclined concentration distribution, thereby providing a specific action.
First, the effect | action which suppresses generation | occurrence | production of a whisker is mentioned. In this way, if the interaction due to the presence of the metal in both layers in a gradient with a gradient is included, it can be explained as follows. In other words, by reflowing the tin or tin alloy layer laid at the specific thickness and the indium layer on the surface layer side, the indium on the surface phase side is appropriately diffused on the base metal side and arranged in an inclined manner, It is considered that moderate creep property of indium is obtained, and whisker generation / growth is suppressed. That is, the internal stress in the tin or tin alloy layer is relaxed, and as a result, the generation of whiskers is effectively suppressed.

さらに本発明においては、上記のようにスズないしスズ合金の層に対してインジウム層の厚さを上記の特定の範囲を超えないよう薄く規定したことで、リフローしたときにかえってはんだ付けしたものの疲労耐久性を高めることができる。そのため、例えばPCB端子や車載用端子としたときに不慮の停止等が許されないような分野や用途に適用される場合にも、極めて高い信頼性を実現することができる。さらには、内部温度の上昇/下降の大きい大型のコンピュータ等においても長期間の連続使用に好適に対応することができる。特に現在主流のはんだであるSn−3Ag−0.5Cuでは従前のSn−37Pbはんだに比べクラックが入りやすく疲労寿命が短くなるとの懸念もあるが、本発明によればそのような点が顕在化しうるアプリケーションにも好適に対応することができる。このような効果が得られる作用機序については未だ未解明の点があるが、上述した2種の金属を傾斜的に配置したためにもたらされるめっき被膜膜内での応力緩和効果が関与するものと考えられる。   Furthermore, in the present invention, by defining the thickness of the indium layer so as not to exceed the above specific range with respect to the tin or tin alloy layer as described above, the fatigue of what was soldered instead when reflowed Durability can be increased. Therefore, extremely high reliability can be realized even when applied to a field or application where an accidental stop or the like is not permitted when, for example, a PCB terminal or a vehicle-mounted terminal is used. Furthermore, even a large-sized computer or the like having a large increase / decrease in internal temperature can suitably cope with long-term continuous use. In particular, Sn-3Ag-0.5Cu, which is currently the mainstream solder, has a concern that cracks are likely to occur and the fatigue life is shortened as compared with the conventional Sn-37Pb solder. However, according to the present invention, such a point becomes apparent. It is also possible to cope with a suitable application. Although there is still an unclear point about the mechanism of action to obtain such an effect, the stress relaxation effect in the plating film resulting from the two types of metals described above being inclined is involved. Conceivable.

ところで、接続端子等におけるはんだ付け温度は、鉛入りはんだであるSn−37Pbを使用していた220℃から、鉛フリーはんだのSn−3Ag−0.5Cuの240℃以上へ移行したため、その差の分大きく上昇している。これに対し本発明によれば、端子部材のはんだ濡れ性を高め、より低温で濡れやすくすることができる。そのため、各種端子部材の製造工程におけるはんだ付け温度を下げることができ大幅なエネルギー削減とともに信頼性の向上につながる。   By the way, the soldering temperature in the connection terminal and the like has shifted from 220 ° C. where Sn-37Pb which is lead-containing solder is used to 240 ° C. or higher of Sn-3Ag-0.5Cu of lead-free solder. It has risen a lot. On the other hand, according to this invention, the solder wettability of a terminal member can be improved and it can make it easy to get wet at lower temperature. Therefore, the soldering temperature in the manufacturing process of various terminal members can be lowered, leading to significant energy reduction and improved reliability.

接続端子部材とする熱処理としてのリフローの前の第1めっき層の厚さと第2めっき層の厚さの関係を以下のように調節することが好ましい。すなわち、第1めっき層の厚さ(t)と第2めっき層の厚さ(t)の比率(t/t)も考慮することが好ましい。第1めっき層の厚さと第2めっき層の厚さとの比率(t/t)は0.02〜0.04の範囲とすることが好ましい。この比率(t/t)を上記上限値以下とすることでウィスカの抑制・防止効果を一層好適に発現させることができ、上記下限値以上とすることで耐熱性を発揮させリフロー後の外観を良化することができる。 It is preferable to adjust the relationship between the thickness of the first plating layer and the thickness of the second plating layer before reflow as the heat treatment for the connection terminal member as follows. That is, it is preferable to consider the ratio (t 2 / t 1 ) between the thickness (t 1 ) of the first plating layer and the thickness (t 2 ) of the second plating layer. The ratio of the thickness of the first plating layer to the thickness of the second plating layer (t 2 / t 1 ) is preferably in the range of 0.02 to 0.04. By making this ratio (t 2 / t 1 ) equal to or less than the above upper limit value, the whisker suppression / prevention effect can be expressed more suitably. Appearance can be improved.

図1は、本発明のめっき被膜接続端子部材を構成するめっき被膜材の一実施形態についてその一部分の表面近傍を模式的に示す断面図であり、図1(a)がリフロー前、図1(b)がリフロー後の状態を示す。リフロー前においては、導電性基材4の表面に、第1めっき層(スズもしくはスズ合金)1a及び第2めっき層(インジウム)が、その順で、上述したそれぞれの特定の層厚さd及びdで電気めっきにより形成されている。これにより多層めっき被膜3aが構成されている。この多層めっき材料10aをリフロー処理することにより、特に融点に低いインジウムからなる第2めっき層2aが溶けて流動し、インジウムがスズもしくはスズ合金からなる第1めっき層に拡散していく。この拡散の結果、インジウムの濃度がめっき層表面から基材4に向かって高−低の連続的な傾斜層dを呈することになる。つまり、リフロー後のめっき被膜層3は傾斜していないか若干傾斜した濃度分布とされためっき外層(主にスズ,スズ合金)1と傾斜した濃度分布とされためっき内層(インジウム−スズないしスズ合金)2とからなる。 FIG. 1 is a cross-sectional view schematically showing the vicinity of a part of the surface of an embodiment of a plated film material constituting the plated film connection terminal member of the present invention. FIG. b) shows the state after reflow. Before the reflow, the first plating layer (tin or tin alloy) 1a and the second plating layer (indium) are arranged in this order on the surface of the conductive substrate 4, and each of the specific layer thicknesses d 1 described above. And d 2 by electroplating. Thereby, the multilayer plating film 3a is constituted. By reflowing the multilayer plating material 10a, the second plating layer 2a made of indium having a particularly low melting point melts and flows, and indium diffuses into the first plating layer made of tin or a tin alloy. The result of this diffusion, the concentration of indium toward the substrate 4 from the plating layer surface height - would exhibit low continuous gradient layer d 3. That is, the plating film layer 3 after reflow is not inclined or has a slightly inclined concentration distribution plating outer layer (mainly tin, tin alloy) 1 and a plated inner layer (indium-tin or tin) having an inclined concentration distribution. Alloy) 2.

インジウムが傾斜した濃度で配置された傾斜層dの厚さは特に限定されないが、リフロー前の第1めっき層と第2めっき層との厚さの合計(d+d)の1〜10%であることが好ましく、1〜5%であることがより好ましい。具体的な厚さでいうと、接続端子としての利用を考慮したとき、傾斜層dが0.1〜0.5μmであることが好ましく、0.1〜0.2μmであることがより好ましい。なお、図1に示した部分では差厚めっきとなっていないが、差厚めっきとされたときにもリフロー後に傾斜的な金属材料の配置となることは同様である。このとき、本発明に規定される第1めっき層の厚さの範囲での差厚めっきとし、かつ本発明に規定される第2めっき層の厚さとしたため、例えば挿抜部とはんだ付け部とで第2めっき層の厚さを変える等の迂遠な処理を必要とせず所望の作用効果が得られるため好ましい。 Although indium is not particularly limited thickness of the graded layer d 3 arranged at the concentrations inclined, total thickness of the first plating layer and the second plated layer before the reflow of (d 1 + d 2) 1~10 % Is preferable, and 1 to 5% is more preferable. In terms specific thickness, when considering the use of a connection terminal, it is preferable that the inclined layer d 3 is 0.1 to 0.5 [mu] m, and more preferably 0.1~0.2μm . In addition, although it is not the differential thickness plating in the part shown in FIG. 1, when it is set to the differential thickness plating, it is the same that the arrangement of the metal material is inclined after the reflow. At this time, since the difference thickness plating within the thickness range of the first plating layer defined in the present invention and the thickness of the second plating layer defined in the present invention, for example, in the insertion / extraction portion and the soldering portion, This is preferable because a desired effect can be obtained without requiring a detour treatment such as changing the thickness of the second plating layer.

接続端子部材とする熱処理としてのリフローの条件は、基材及びめっきの厚さ等を考慮して設定してもよい。本発明によれば、この熱処理としてリフローとはんだ付けにおける加熱処理とをかねてもよく、この加熱処理温度を低減することができ好ましい。上記熱処理としてリフローするときの炉内雰囲気温度としていえば、300〜600℃とすることが好ましい。リフロー処理する時間は1〜10秒であることが好ましく、2〜5秒であることがより好ましい。リフロー処理温度が上記下限値以上であるとインジウムの拡散を十分に進行させ、所望の傾斜状態が得られる点で好ましい。リフロー温度が上記上限値以下であると、インジウムの傾斜を必要以上に進行させず例えばウィスカの抑制性を十分に発揮させることができ、また電子部品等の品質維持にも対応することができる。   The reflow conditions as the heat treatment for the connection terminal member may be set in consideration of the substrate and the thickness of the plating. According to the present invention, reflow and heat treatment in soldering may be performed as the heat treatment, and this heat treatment temperature can be reduced. Speaking of the atmosphere temperature in the furnace when reflowing as the heat treatment, it is preferably set to 300 to 600 ° C. The time for the reflow treatment is preferably 1 to 10 seconds, and more preferably 2 to 5 seconds. It is preferable that the reflow treatment temperature is equal to or higher than the lower limit value in that the indium diffusion is sufficiently advanced and a desired tilt state is obtained. When the reflow temperature is not more than the above upper limit value, the indium gradient does not proceed more than necessary, and for example, whisker suppression can be sufficiently exerted, and the quality of electronic components and the like can be maintained.

本発明のめっき被膜材においては、スズないしスズ合金のめっきに先立ち、導電性基材の表面に予め下地層を配設しておくことが好ましい。下地層としては、ニッケルまたはニッケル合金からなる層を電気めっきにより形成することが挙げられる。これらの下地めっき層は導電性基材の銅などの熱拡散を抑制するためのバリアとして有効に機能し、この上に形成された2層構造のめっき層の耐熱性を向上させることができる。また、ニッケル合金を下地めっきとして施しておくと、リフロー時の銅のめっき層への拡散を抑制ないし防止することができ好ましい。さらにまた、導電性基材の表面に予め銅または銅合金を下地めっきしておくことにより、一層良好な導電性を付与することができ好ましい。他方、第2めっき層の外側に他の層等を設けてもよい。   In the plating film material of the present invention, it is preferable to dispose an underlayer in advance on the surface of the conductive substrate prior to plating of tin or tin alloy. Examples of the underlayer include forming a layer made of nickel or a nickel alloy by electroplating. These base plating layers effectively function as a barrier for suppressing thermal diffusion of copper or the like of the conductive base material, and can improve the heat resistance of the plating layer having a two-layer structure formed thereon. In addition, it is preferable to apply a nickel alloy as the base plating because the diffusion of copper into the plating layer during reflow can be suppressed or prevented. Furthermore, it is preferable that the surface of the conductive substrate is preliminarily plated with copper or a copper alloy so that better conductivity can be imparted. On the other hand, another layer or the like may be provided outside the second plating layer.

本発明の製造方法の好ましい実施態様を挙げると、下記(1)〜(9)の工程を適宜組み合せることが挙げられ、これらをその順で順次行うことが好ましい。(1)導電性基材を浸漬脱脂し必要により水洗する工程、(2)電解脱脂し必要により水洗する工程、(3)酸洗浄し必要により水洗する工程、(4)ニッケルめっき(電気めっき)を施し必要により水洗する工程、(5)スズめっき(電気めっき)を施し必要により水洗する工程、(6)インジウムめっき(電気めっき)を施し必要により水洗する工程、(7)乾燥工程、(8)多層めっき材料への熱処理としてのリフロー処理する工程、(9)雄端子ないし雌端子にリード線等をはんだ付けする工程。   When a preferred embodiment of the production method of the present invention is given, the following steps (1) to (9) may be appropriately combined, and it is preferable to sequentially carry out these steps in that order. (1) Step of immersing and degreasing the conductive substrate and washing with water if necessary, (2) Step of electrolytic degreasing and washing with water if necessary, (3) Step of acid washing and washing with water if necessary, (4) Nickel plating (electroplating) (5) A step of applying tin plating (electroplating) and a step of washing with water if necessary, (6) A step of applying indium plating (electroplating) and a step of washing with water if necessary, (7) A drying step, (8 ) A step of performing reflow treatment as a heat treatment on the multilayer plating material, and (9) a step of soldering lead wires or the like to the male terminal or the female terminal.

浸漬脱脂する工程(1)では、市販の浸漬脱脂液を濃度2〜4%の範囲で、温度50℃、約20秒間で行うことが可能である。電解脱脂する工程(2)でも、それぞれ市販の電解脱脂液を濃度5%程度で、室温付近で電流密度2〜4A/dm、約20秒間で行うことが可能である。酸洗浄工程(3)は、好ましくは濃度5%硫酸で、室温、20秒間で行うことが可能である。ニッケルめっき工程(4)は、スルファミン酸ニッケル浴を用いて約55℃で、電流密度5A/dm、30秒間で行うことが可能である。スズめっき工程(5)は、酸性スズめっき浴を用いて約30℃で、電流密度5A/dm、40秒間で行うことが可能である。インジウムめっき工程(6)は、めっき浴を用いて約30℃で、電流密度0.5A/dm、120秒間で行うことが可能である。このように、めっき工程における電流密度及びめっき処理時間を適宜設定して、第1めっき層(スズ,スズ合金)及び第2めっき層(インジウム)の厚さを上記特定のものとすることができる。 In the step (1) of immersion degreasing, a commercially available immersion degreasing solution can be performed at a temperature of 50 ° C. for about 20 seconds within a concentration range of 2 to 4%. But the step of electrolytic degreasing (2), each commercially available electrolytic degreasing solution at about 5% concentration, current density 2~4A / dm 2 at about room temperature, can be performed in about 20 seconds. The acid washing step (3) is preferably performed at a concentration of 5% sulfuric acid and at room temperature for 20 seconds. The nickel plating step (4) can be performed using a nickel sulfamate bath at about 55 ° C. and a current density of 5 A / dm 2 for 30 seconds. The tin plating step (5) can be performed using an acidic tin plating bath at about 30 ° C. and a current density of 5 A / dm 2 for 40 seconds. The indium plating step (6) can be performed using a plating bath at about 30 ° C. and a current density of 0.5 A / dm 2 for 120 seconds. In this way, the current density and the plating treatment time in the plating process can be set as appropriate, and the thicknesses of the first plating layer (tin, tin alloy) and the second plating layer (indium) can be set to the above specific ones. .

図2(a)は、本発明のめっき被膜接続端子部材の一実施形態を模式的に示す側面図であり、図2(b)はリフロー前のめっき被膜層(第1めっき層及び第2めっき層)の厚さを示すグラフである。同図に示しためっき被膜接続端子部材(雄端子部材)71は図12に示した雄端子部材51と同種のものであるが、多少形状の異なるものとして示している。雄端子部材71はTAB側が針状の挿抜部71aとされ雌端子部材(図示せず)に挿入して接続される。一方、その反対側のプリント回路基板側は同様に針状ではあるがはんだ付けしてリード線と接続されるはんだ付け部71bとされている。図2(b)に示したように、リフロー前において同接続端子71をなす多層めっき材料の第1めっき層は、挿抜部I〜III間においておよそ1.2μmの厚さとされている。一方、はんだ付け部IV−V間においては第1めっき層が3μmにまで厚くされている。第2めっき層は全体において0.2μmの均一な厚さで配設されている。このように本実施形態の接続端子部材71は挿抜部からはんだ付け部に向けて第1めっき層の厚さが増すように差厚めっきが適用され、所定の厚さの箇所とそれより薄い箇所とが設けられている。このようにすることで、従来実現が困難であった複数の要求特性を同時に満足し、すなわち、良好な挿抜性とはんだ付け性を両立することができることはもとより、ウィスカの発生を抑制し、疲労寿命を長期化することにより機器における耐久性及び信頼性を大幅に高めることができる。   Fig.2 (a) is a side view which shows typically one Embodiment of the plating film connection terminal member of this invention, FIG.2 (b) is the plating film layer (1st plating layer and 2nd plating before reflow). It is a graph which shows the thickness of a layer. The plated film connecting terminal member (male terminal member) 71 shown in the figure is the same type as the male terminal member 51 shown in FIG. 12, but is shown as having a slightly different shape. The male terminal member 71 has a needle-like insertion / extraction portion 71a on the TAB side, and is inserted and connected to a female terminal member (not shown). On the other hand, the other side of the printed circuit board is similarly shaped like a needle but is a soldered portion 71b that is soldered and connected to the lead wire. As shown in FIG. 2B, the first plating layer of the multilayer plating material that forms the connection terminal 71 before reflowing has a thickness of about 1.2 μm between the insertion / extraction portions I to III. On the other hand, the first plating layer is thickened to 3 μm between the soldering portions IV-V. The second plating layer is disposed with a uniform thickness of 0.2 μm as a whole. As described above, the connection terminal member 71 of the present embodiment is applied with the differential thickness plating so that the thickness of the first plating layer is increased from the insertion / extraction part to the soldering part, and a part having a predetermined thickness and a part having a thinner thickness than that are provided. And are provided. In this way, it can satisfy a plurality of required characteristics that have been difficult to realize at the same time, that is, it can satisfy both good insertion / removability and solderability, suppress whisker generation, and fatigue. By extending the service life, the durability and reliability of the device can be greatly increased.

以下、本発明について実施例に基づきさらに詳細に説明するが、本発明がこれにより限定して解釈されるものではない。
(作製例)
試験体1
0.64mm(厚さ)×20mm(幅)の黄銅(35/65黄銅)からなる導電性基材に、ニッケルからなる下地めっきを0.5μmの厚さで設けた。その後、上記下地めっきの表面にスズめっき層1.5μmを施し、さらにそのスズめっき層の表面にインジウムめっき層0.05μmを形成して多層めっき材料を得た。この多層めっき材料に対し、雰囲気温度400〜450℃の条件でリフロー処理を行ない、めっき被膜材の試験体1を得た。この試験体1について、インジウム表面側から基材側にエッチングしスズとインジウムとの組成を測定するオージェ分析を行なった。その結果、表面側にインジウムが高濃度で存在し、基材側に進むにつれその濃度が減少していくことが確認できた(図3参照)。このとき、インジウムが傾斜的に配置された傾斜層dの厚さは0.1μmと算定された。
EXAMPLES Hereinafter, although this invention is demonstrated in detail based on an Example, this invention is limited to this and is not interpreted.
(Production example)
Specimen 1
On a conductive substrate made of brass (35/65 brass) of 0.64 mm (thickness) × 20 mm (width), a base plating made of nickel was provided with a thickness of 0.5 μm. Thereafter, a tin plating layer of 1.5 μm was applied to the surface of the base plating, and an indium plating layer of 0.05 μm was formed on the surface of the tin plating layer to obtain a multilayer plating material. The multilayer plating material was subjected to a reflow treatment under an atmosphere temperature of 400 to 450 ° C. to obtain a test body 1 of a plating film material. This specimen 1 was subjected to Auger analysis in which the composition of tin and indium was measured by etching from the indium surface side to the base material side. As a result, it was confirmed that indium was present at a high concentration on the surface side, and the concentration decreased as it proceeded to the substrate side (see FIG. 3). The thickness of the graded layer d 3 of indium is inclined arranged was estimated to be 0.1 [mu] m.

試験体2〜10、c1〜c8
銅合金(導電性基材)、下地めっき、第1めっき層、第2めっき層を表1のように変えた以外、上記試験体1と同様にしてめっき被膜材を作製した。試験体10について、上記と同様にオージェ分析を行なった。その結果、表面側にインジウムが高濃度で存在し、基材側に進むにつれその濃度が減少していくことが確認できた(図4参照)。このとき、インジウムが傾斜的に配置された傾斜層dの厚さは0.1〜0.2μmと算定された。
Specimens 2-10, c1-c8
A plated coating material was produced in the same manner as in the above test sample 1 except that the copper alloy (conductive substrate), the base plating, the first plating layer, and the second plating layer were changed as shown in Table 1. The specimen 10 was subjected to Auger analysis in the same manner as described above. As a result, it was confirmed that indium was present at a high concentration on the surface side, and the concentration decreased as it proceeded to the substrate side (see FIG. 4). The thickness of the graded layer d 3 of indium is inclined arranged was estimated to be 0.1 to 0.2 [mu] m.

(実施例・比較例)
試験体11〜14、c9
0.64mm(厚さ)×20mm(幅)の黄銅(35/65黄銅)からなる導電性基材を図2(a)の形に打ち抜いた後、ニッケルからなる下地めっきを0.5μmの厚さで設けた。その後、上記下地めっきの表面に挿抜部はスズめっき層1.0μm、はんだ付け部はスズめっき層3.0μmを施し、さらにそのスズめっき層の表面にインジウムめっき層0.2μmを形成して多層めっき材料を得た。この多層めっき材料に対し、雰囲気温度400〜450℃の条件でリフロー処理を行ない、めっき被膜材の試験体11を得た。
試験体c9については、試験体11と同様の多層めっき材料を得た後、リフロー処理しなかった。試験体12〜14についてはめっき厚さを変えた以外は試験体11と同様にして試験体を得た。
(Examples and comparative examples)
Specimens 11-14, c9
A conductive substrate made of brass (35/65 brass) having a thickness of 0.64 mm (thickness) × 20 mm (width) is punched into the shape shown in FIG. 2A, and then a base plating made of nickel is formed to a thickness of 0.5 μm. It was provided. Thereafter, a tin plating layer of 1.0 μm is applied to the surface of the base plating, a tin plating layer of 3.0 μm is applied to the soldering portion, and an indium plating layer of 0.2 μm is formed on the surface of the tin plating layer. A plating material was obtained. The multilayer plating material was subjected to a reflow process under the conditions of an atmospheric temperature of 400 to 450 ° C. to obtain a test body 11 of a plating film material.
For the specimen c9, after obtaining the same multilayer plating material as that of the specimen 11, the reflow treatment was not performed. Test bodies 12 to 14 were obtained in the same manner as the test body 11 except that the plating thickness was changed.

<はんだ濡れ性試験>
はんだ濡れ性は、JIS C0053 環境試験方法−電気・電子−はんだ付け試験方法(平衡法)に準拠して行なった。溶融したはんだ(千住金属工業社製、Sn−3Ag−0.5Cu、フラックスマイルドロジン NA200[商品名])に、上で得た試験体1(Sn1.5/In0.05)、試験体c1(リフローSn1.5)、試験体c2(半光沢Sn1.5)を、はんだ温度230、240、245℃でそれぞれ2秒間浸漬して、そのはんだの濡れ性をゼロクロス時間として測定した。ゼロクロス時間とははんだが濡れ始めてから作用力がゼロとなるまでの時間であり短いほどはんだがめっき表面に濡れやすいことを示す。結果を図5に示した。試験体12〜14、c9ははんだ付部のみ試験した。
<Solder wettability test>
Solder wettability was performed in accordance with JIS C0053 environmental test method-electrical / electronic-soldering test method (equilibrium method). To the molten solder (Senju Metal Industry Co., Ltd., Sn-3Ag-0.5Cu, Flux Mildrozin NA200 [trade name]), the specimen 1 (Sn1.5 / In0.05) obtained above and the specimen c1 ( Reflow Sn1.5) and specimen c2 (semi-gloss Sn1.5) were immersed for 2 seconds at solder temperatures of 230, 240, and 245 ° C., respectively, and the wettability of the solder was measured as a zero-crossing time. The zero crossing time is the time from when the solder begins to get wet until the acting force becomes zero, and the shorter the time, the easier the solder gets wet on the plating surface. The results are shown in FIG. Only the soldering part was tested for the test bodies 12-14 and c9.

<摩擦特性試験>
試験体1(Sn1.5/In0.05)、試験体c1(リフローSn1.5)について、下記のようにして摩擦特性試験を行った。バウデン型磨耗試験機を用いて、荷重300g、摺動速度100mm/分で試験を開始し、摺動距離10mm、往復20回摺動させた時の動摩擦係数を測定した。 結果を図6に示した。摩擦特性試験で得られる動摩擦係数について、試験体1は試験体c1と同等もしくは同等以下であり、現行で使用されている試験体c1で実用上の要求レベルを十分に満足していることから、試験体1はこの特性において良好な性能を示すことがわかる。なお、表2に示した本試験の結果について、試験体12〜14,c9は挿抜部のみ試験した。
<Frictional property test>
The test specimen 1 (Sn1.5 / In0.05) and the test specimen c1 (reflow Sn1.5) were subjected to a friction characteristic test as follows. Using a Bowden-type abrasion tester, the test was started at a load of 300 g and a sliding speed of 100 mm / min, and the dynamic friction coefficient was measured when the sliding distance was 10 mm and the sliding was performed 20 times. The results are shown in FIG. Regarding the dynamic friction coefficient obtained in the friction characteristic test, the test body 1 is equal to or less than or equal to the test body c1, and the practically required level is sufficiently satisfied with the currently used test body c1. It can be seen that the specimen 1 exhibits good performance in this characteristic. In addition, about the result of this test shown in Table 2, the test bodies 12-14 and c9 tested only the insertion / extraction part.

<はんだ接合疲労試験>
図11に示すように、導電性基材(黄銅)4の上にめっき被膜(リフローされ傾斜状態となった第1めっき層及び第2めっき層)3を施した試験体片10同士を、めっき層3同士が対面するよう重ね合わせ、その間に50〜100μmの厚さに塗布したSn−3Ag−0.5Cuはんだを介在させ245℃の条件ではんだ付け処理を行なった。インジウム層の厚さを変えた以外試験体1と同様にして試験体を作製し、これをはんだ接合疲労試験の供試材とし低サイクル疲労寿命を測定した。このとき、歪1%、速度5μm/sec、500サイクルの条件を一方の供試材の末端においてその長さ方向(図中の振幅方向)に付加し、接合部の状態を目視または拡大観察により相対評価した。
<Solder joint fatigue test>
As shown in FIG. 11, the test specimens 10 each having the plating film (the first plating layer and the second plating layer which have been reflowed and in an inclined state) 3 are plated on the conductive base material (brass) 4. The layers 3 were overlapped so as to face each other, and Sn-3Ag-0.5Cu solder applied to a thickness of 50 to 100 μm was interposed therebetween, and soldering was performed at 245 ° C. A test body was prepared in the same manner as the test body 1 except that the thickness of the indium layer was changed, and this was used as a test material for a solder joint fatigue test to measure a low cycle fatigue life. At this time, the conditions of strain 1%, speed 5 μm / sec, and 500 cycles were added in the length direction (amplitude direction in the figure) at the end of one of the test materials, and the state of the joint portion was visually or enlargedly observed. Relative evaluation.

<ウィスカ感受性試験>
試験体3(Sn2μm/In0.05μm)、試験体c4(半光沢Sn2μm)を常温(約28℃)で500、1000、2000、4000時間放置後に、それぞれSEMにより観察しめっき表面の状態を調べた。結果を図7に示す。同様にして試験体1、c3についてSEM観察を行った結果(2000h)を図8〜10に示した。
<Whisker sensitivity test>
The specimen 3 (Sn 2 μm / In 0.05 μm) and the specimen c4 (semi-gloss Sn 2 μm) were allowed to stand at room temperature (about 28 ° C.) for 500, 1000, 2000, and 4000 hours and then observed by SEM to examine the state of the plating surface. . The results are shown in FIG. Similarly, the results (2000 h) of SEM observation of the specimens 1 and c3 are shown in FIGS.

[各試験における評価基準]
・はんだ濡れ性(245℃)
◎・・・ゼロクロス時間が1.0秒未満の場合
△・・・ゼロクロス時間が1.0秒以上2秒未満の場合
×・・・ゼロクロス時間が2秒以上の場合
・ウィスカ感受性試験(2000h)
◎・・・ウィスカの発生が認められない
△・・・ウィスカの発生がわずかに認められた
×・・・ウィスカの発生が認められた
[Evaluation criteria in each test]
・ Solder wettability (245 ℃)
◎ ・ ・ ・ Zero cross time is less than 1.0 seconds △ ・ ・ ・ Zero cross time is 1.0 seconds or more and less than 2 seconds × ・ ・ ・ Zero cross time is 2 seconds or more ・ Whisker sensitivity test (2000h)
◎ ・ ・ ・ No whisker generation △ ・ ・ ・ Slight whisker generation ×× Whisker generation

・摩擦特性試験
◎・・・動摩擦係数が試験体c1と比較して同等もしくは小さい
○・・・動摩擦係数が試験体c1と比較してやや大きい
×・・・動摩擦係数が試験体c1と比較して大きい
・はんだ接合疲労試験
◎・・・クラック発生なし、またはクラックほとんどなし
○・・・ややクラックの発生あり
−・・・試験を実施していない
・ Frictional property test
◎ ・ ・ ・ Dynamic friction coefficient is equal to or smaller than specimen c1 ○ ・ ・ ・ Dynamic friction coefficient is slightly larger than specimen c1 × ・ ・ ・ Dynamic friction coefficient is larger than specimen c1 ・ Solder joint Fatigue test ◎ ・ ・ ・ No or almost no crack ○ ○ Slightly cracked − ・ ・ ・ Not tested

上記の結果から分かるように、本発明のめっき被膜接続端子に適用される厚さの第1めっき層及び第2めっき層を施されためっき被膜材はリフロー処理によりインジウムとスズとの傾斜的な濃度分布が実現され、良好なはんだ濡れ性と摺動性とを示し、しかもウィスカの発生防止性を示し、また高い耐疲労性(亀裂抑制性)が実現されることが分かる。   As can be seen from the above results, the plating film material to which the first plating layer and the second plating layer having a thickness applied to the plating film connection terminal of the present invention are applied is a gradient of indium and tin by reflow treatment. It can be seen that the concentration distribution is realized, good solder wettability and slidability, whisker prevention, and high fatigue resistance (cracking suppression) are realized.

1 めっき内層(リフロー後の第1めっき層側の領域)
1a 第1めっき層
2 めっき外層(リフロー後の第2めっき層側の領域)
1a 第2めっき層
3 リフロー後のめっき被膜層
3a 多層めっき被膜
4 導電性基材
10 めっき被膜材(接続端子部材)
10a 多層めっき材料(接続端子部材の前駆体)
50 雄端子
51、71 雄端子部材
51a、71a 挿抜部
51b、71b はんだ付け部
52 リード線
53 把持部
54 雄端子受口
55 雄端子筐体
60 雌端子
61 雌端子部材
65 雌端子筐体
100 端子(コネクター)
1 Plating inner layer (region on the first plating layer side after reflow)
1a First plating layer 2 Plating outer layer (region on the second plating layer side after reflow)
DESCRIPTION OF SYMBOLS 1a 2nd plating layer 3 Plating film layer after reflow 3a Multilayer plating film 4 Conductive base material 10 Plating film material (connection terminal member)
10a Multilayer plating material (precursor of connection terminal member)
50 Male terminal 51, 71 Male terminal member 51a, 71a Insertion / extraction part 51b, 71b Soldering part 52 Lead wire 53 Grip part 54 Male terminal receptacle 55 Male terminal housing 60 Female terminal 61 Female terminal member 65 Female terminal housing 100 Terminal (connector)

上記の課題は下記の手段により解決された。
(1)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなる接続端子部材であって、
前記第1めっき層について、前記接続端子部材の挿抜部における厚さを0.3〜3μmとし、前記接続端子部材のはんだ付け部における厚さを前記挿抜部の厚さより厚くし、
前記第2めっき層の厚さを0.05〜0.2μmとしたことを特徴とするめっき被膜接続端子部材。
(2)前記第1めっき層の前記挿抜部の厚さ(Ts)と前記はんだ付け部との厚さ(Th)の差(Td=Th−Ts)を1.0〜2.7μmとしたことを特徴とする(1)に記載の接続端子部材。
(3)前記第1めっき層の前記挿抜部における厚さが1.5μm以上であることを特徴とする(1)又は(2)に記載の接続端子部材。
(4)前記第2めっき層の厚さが前記挿抜部及び前記はんだ付け部において均一にされたことを特徴とする(1)〜(3)のいずれか1項に記載の接続端子部材。
)前記リフロー処理により、前記第2めっき層のインジウムの濃度がめっき表面側から導電性基材側にむけ傾斜的に減少するようにしたことを特徴とする(1)〜(4)のいずれか1項に記載の接続端子部材。
)前記第1めっき層と前記導電性基材との間に、ニッケルまたはニッケル合金からなる下地めっき層が介在されている(1)〜(5)のいずれか1項に記載の接続端子部材。
)前記第1めっき層と前記導電性基材との間に、銅または銅合金からなる下地めっき層が介在されている(1)〜()のいずれか1項に記載の接続端子部材。
)前記第1めっき層が、スズ、スズ−銀合金、スズ−ビスマス合金、スズ−銅合金、及びスズ−銀−銅合金の群から選ばれる少なくとも1種からなることを特徴とする(1)〜()のいずれか1項に記載の接続端子部材。
(9)(1)〜(8)のいずれか1項に記載の接続端子部材を具備する接続端子。
(10)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなるめっき被膜材であって、前記第1めっき層の厚さを0.3〜3μmとし、第2めっき層の厚さを0.05〜0.2μmとしたことを特徴とする接続端子用めっき被膜材。
(11)前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とする(10)に記載のめっき被膜材。
(12)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料であって、前記第1めっき層の厚さを0.3〜3μmとし、前記第2めっき層の厚さを0.05〜0.2μmとし、リフローして用いることを特徴とする接続端子用の多層めっき材料。
(13)前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とする(12)に記載の多層めっき材料
(14)導電性基材の外側に、スズもしくはスズ合金からなる第1めっき層を形成し、該第1めっき層の表面にインジウムからなる第2めっき層を形成して接続端子部材の多層めっき材料とし、該多層めっき材料をリフローして挿抜部とはんだ付け部とを有する接続端子部材とするに当たり、
前記第1めっき層について、前記挿抜部における厚さを0.3〜3μmとし、かつその前記はんだ付け部における厚さを前記挿抜部の厚さより厚くし、他方、前記第2めっき層の厚さを0.05〜0.2μmとして前記多層めっき材料とし、該多層めっき材料をリフローして接続端子部材とすることを特徴とするめっき被膜接続端子部材の製造方法。
The above problems have been solved by the following means.
(1) A connection terminal obtained by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer A member,
For the first plating layer, the thickness at the insertion / extraction part of the connection terminal member is 0.3 to 3 μm, and the thickness at the soldering part of the connection terminal member is thicker than the thickness of the insertion / extraction part,
A plating film connection terminal member, wherein the thickness of the second plating layer is 0.05 to 0.2 μm.
(2) The difference (Td = Th−Ts) between the thickness (Ts) of the insertion / extraction portion of the first plating layer and the thickness (Th) of the soldering portion is set to 1.0 to 2.7 μm. (1) The connection terminal member according to (1).
(3) The connection terminal member according to (1) or (2), wherein a thickness of the insertion / extraction portion of the first plating layer is 1.5 μm or more.
(4) The connection terminal member according to any one of (1) to (3), wherein the thickness of the second plating layer is uniform in the insertion / extraction portion and the soldering portion.
( 5 ) The indium concentration of the second plating layer is decreased by the reflow process so as to be inclined from the plating surface side to the conductive substrate side. (1) to (4) The connection terminal member of any one of Claims .
( 6 ) The connection terminal according to any one of (1) to (5), wherein a base plating layer made of nickel or a nickel alloy is interposed between the first plating layer and the conductive base material. Element.
( 7 ) The connection terminal according to any one of (1) to ( 6 ), wherein a base plating layer made of copper or a copper alloy is interposed between the first plating layer and the conductive base material. Element.
( 8 ) The first plating layer is made of at least one selected from the group consisting of tin, tin-silver alloy, tin-bismuth alloy, tin-copper alloy, and tin-silver-copper alloy ( The connection terminal member according to any one of 1) to ( 7 ).
(9) A connection terminal comprising the connection terminal member according to any one of (1) to (8).
(10) A plating film obtained by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer. It is a material, Comprising: The thickness of the said 1st plating layer shall be 0.3-3 micrometers, and the thickness of the 2nd plating layer shall be 0.05-0.2 micrometers, The plating film material for connecting terminals characterized by the above-mentioned.
(11) The plating film material according to (10), wherein the first plating layer is provided with a predetermined thickness portion and a thinner portion.
(12) A multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate, and a second plating layer made of indium on the surface of the first plating layer, the first plating layer A multilayer plating material for connection terminals, wherein the plating layer has a thickness of 0.3 to 3 μm and the second plating layer has a thickness of 0.05 to 0.2 μm and is reflowed.
(13) The multilayer plating material according to (12), wherein the first plating layer is provided with a portion having a predetermined thickness and a portion thinner than the predetermined thickness. Forming a first plating layer made of tin or a tin alloy, forming a second plating layer made of indium on the surface of the first plating layer to obtain a multilayer plating material for a connection terminal member, and reflowing the multilayer plating material; In making a connection terminal member having an insertion / extraction part and a soldering part,
About the said 1st plating layer, the thickness in the said insertion / extraction part shall be 0.3-3 micrometers, and the thickness in the said soldering part is made thicker than the thickness of the said insertion / extraction part, On the other hand, the thickness of the said 2nd plating layer 0.05 to 0.2 μm is used for the multilayer plating material, and the multilayer plating material is reflowed to form a connection terminal member.

上記の課題は下記の手段により解決された。
(1)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなる接続端子部材であって、
前記第1めっき層について、前記接続端子部材の挿抜部における厚さを0.3〜3μmとし、前記接続端子部材のはんだ付け部における厚さを前記挿抜部の厚さより厚くし、
前記第2めっき層の厚さを0.05〜0.2μmとしたことを特徴とするめっき被膜接続端子部材。
(2)前記第1めっき層の前記挿抜部の厚さ(Ts)と前記はんだ付け部との厚さ(Th)の差(Td=Th−Ts)を1.0〜2.7μmとしたことを特徴とする(1)に記載の接続端子部材。
(3)前記第1めっき層の前記挿抜部における厚さが1.5μm以上であることを特徴とする(1)又は(2)に記載の接続端子部材。
(4)前記第2めっき層の厚さが前記挿抜部及び前記はんだ付け部において均一にされたことを特徴とする(1)〜(3)のいずれか1項に記載の接続端子部材。
(5)前記リフロー処理により、前記第2めっき層のインジウムの濃度がめっき表面側から導電性基材側にむけ傾斜的に減少するようにしたことを特徴とする(1)〜(4)のいずれか1項に記載の接続端子部材。
(6)前記第1めっき層と前記導電性基材との間に、ニッケルまたはニッケル合金からなる下地めっき層が介在されている(1)〜(5)のいずれか1項に記載の接続端子部材。
(7)前記第1めっき層と前記導電性基材との間に、銅または銅合金からなる下地めっき層が介在されている(1)〜(6)のいずれか1項に記載の接続端子部材。
(8)前記第1めっき層が、スズ、スズ−銀合金、スズ−ビスマス合金、スズ−銅合金、及びスズ−銀−銅合金の群から選ばれる少なくとも1種からなることを特徴とする(1)〜(7)のいずれか1項に記載の接続端子部材。
(9)(1)〜(8)のいずれか1項に記載の接続端子部材を具備する接続端子。
(10)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなるめっき被膜材であって、前記第1めっき層の厚さを0.3〜3μmとし、前記第2めっき層の厚さを0.05〜0.2μmとした接続端子用めっき被膜材であって、
前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とするめっき被膜材。
(11)接続端子としたときに、前記第1めっき層の所定の厚さの箇所をそのはんだ付け部とし、それより薄い箇所をその挿抜部とすることを特徴とする(10)に記載のめっき被膜材。
(12)導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料であって、前記第1めっき層の厚さを0.3〜3μmとし、前記第2めっき層の厚さを0.05〜0.2μmとし、リフローして用いる接続端子用の多層めっき材料であって、前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とする多層めっき材料。
(13)接続端子としたときに、前記第1めっき層の所定の厚さの箇所をそのはんだ付け部とし、それより薄い箇所をその挿抜部とすることを特徴とする(12)に記載の多層めっき材料。
(14)導電性基材の外側に、スズもしくはスズ合金からなる第1めっき層を形成し、該第1めっき層の表面にインジウムからなる第2めっき層を形成して接続端子部材の多層めっき材料とし、該多層めっき材料をリフローして挿抜部とはんだ付け部とを有する接続端子部材とするに当たり、
前記第1めっき層について、前記挿抜部における厚さを0.3〜3μmとし、かつ前記はんだ付け部における厚さを前記挿抜部の厚さより厚くし、他方、前記第2めっき層の厚さを0.05〜0.2μmとして前記多層めっき材料とし、該多層めっき材料をリフローして接続端子部材とすることを特徴とするめっき被膜接続端子部材の製造方法。
The above problems have been solved by the following means.
(1) A connection terminal obtained by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer A member,
For the first plating layer, the thickness at the insertion / extraction part of the connection terminal member is 0.3 to 3 μm, and the thickness at the soldering part of the connection terminal member is thicker than the thickness of the insertion / extraction part,
A plating film connection terminal member, wherein the thickness of the second plating layer is 0.05 to 0.2 μm.
(2) The difference (Td = Th−Ts) between the thickness (Ts) of the insertion / extraction portion of the first plating layer and the thickness (Th) of the soldering portion is set to 1.0 to 2.7 μm. (1) The connection terminal member according to (1).
(3) The connection terminal member according to (1) or (2), wherein a thickness of the insertion / extraction portion of the first plating layer is 1.5 μm or more.
(4) The connection terminal member according to any one of (1) to (3), wherein the thickness of the second plating layer is uniform in the insertion / extraction portion and the soldering portion.
(5) The indium concentration of the second plating layer is decreased in an inclined manner from the plating surface side to the conductive substrate side by the reflow treatment. (1) to (4) The connection terminal member of any one of Claims.
(6) The connection terminal according to any one of (1) to (5), wherein a base plating layer made of nickel or a nickel alloy is interposed between the first plating layer and the conductive substrate. Element.
(7) The connection terminal according to any one of (1) to (6), wherein a base plating layer made of copper or a copper alloy is interposed between the first plating layer and the conductive substrate. Element.
(8) The first plating layer is made of at least one selected from the group consisting of tin, tin-silver alloy, tin-bismuth alloy, tin-copper alloy, and tin-silver-copper alloy ( The connection terminal member according to any one of 1) to (7).
(9) A connection terminal comprising the connection terminal member according to any one of (1) to (8).
(10) A plating film obtained by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer. a timber, wherein the thickness of the first plating layer and 0.3 to 3 m, a thickness of the second plating layer a plating coat material for a connection pin which is 0.05 to 0.2 [mu] m and,
A plating film material characterized in that a portion having a predetermined thickness and a portion thinner than the predetermined thickness are provided for the first plating layer.
(11) When the connection terminal is used, a portion having a predetermined thickness of the first plating layer is a soldered portion, and a thinner portion is the insertion / extraction portion . Plating film material.
(12) A multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate, and a second plating layer made of indium on the surface of the first plating layer, the first plating layer the thickness of the plating layer is 0.3 to 3 m, and 0.05~0.2μm the thickness of the second plating layer, a multi-layer plating material for connecting terminals Ru used by reflowing, wherein the A multilayer plating material characterized in that a portion having a predetermined thickness and a portion thinner than the predetermined thickness are provided for one plating layer.
(13) When the connection terminal is used, a portion having a predetermined thickness of the first plating layer is used as the soldering portion, and a thinner portion is used as the insertion / extraction portion . Multi-layer plating material.
(14) A first plating layer made of tin or a tin alloy is formed on the outer side of the conductive substrate, and a second plating layer made of indium is formed on the surface of the first plating layer, so that multi-layer plating of the connection terminal member is performed. As a material, when reflowing the multilayer plating material to make a connection terminal member having an insertion / extraction portion and a soldering portion,
For the first plating layer, the thickness at the insertion / extraction portion is 0.3 to 3 μm, and the thickness at the soldering portion is larger than the thickness of the insertion / extraction portion, while the thickness of the second plating layer is A method for producing a plating film connection terminal member, characterized in that the multilayer plating material is 0.05 to 0.2 μm, and the multilayer plating material is reflowed to form a connection terminal member.

Claims (14)

導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなる接続端子部材であって、
前記第1めっき層について、前記接続端子部材の挿抜部における厚さを0.3〜3μmとし、前記接続端子部材のはんだ付け部における厚さを前記挿抜部の厚さより厚くし、
前記第2めっき層の厚さを0.05〜0.2μmとしたことを特徴とするめっき被膜接続端子部材。
A connection terminal member formed by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer. And
For the first plating layer, the thickness at the insertion / extraction part of the connection terminal member is 0.3 to 3 μm, and the thickness at the soldering part of the connection terminal member is thicker than the thickness of the insertion / extraction part,
A plating film connection terminal member, wherein the thickness of the second plating layer is 0.05 to 0.2 μm.
前記リフロー処理により、前記第2めっき層のインジウムの濃度がめっき表面側から導電性基材側にむけ傾斜的に減少するようにしたことを特徴とする請求項1に記載の接続端子部材。   2. The connection terminal member according to claim 1, wherein the concentration of indium in the second plating layer is decreased in an inclined manner from the plating surface side to the conductive substrate side by the reflow treatment. 前記第1めっき層と前記導電性基材との間に、ニッケルまたはニッケル合金からなる下地めっき層が介在されている請求項1又は2に記載の接続端子部材。   The connection terminal member according to claim 1, wherein a base plating layer made of nickel or a nickel alloy is interposed between the first plating layer and the conductive base material. 前記第1めっき層と前記導電性基材との間に、銅または銅合金からなる下地めっき層が介在されている請求項1〜3のいずれか1項に記載の接続端子部材。   The connection terminal member according to claim 1, wherein a base plating layer made of copper or a copper alloy is interposed between the first plating layer and the conductive base material. 前記第2めっき層の厚さが前記挿抜部及び前記はんだ付け部において均一にされたことを特徴とする請求項1〜4のいずれか1項に記載の接続端子部材。   5. The connection terminal member according to claim 1, wherein a thickness of the second plating layer is made uniform in the insertion / extraction part and the soldering part. 前記第1めっき層が、スズ、スズ−銀合金、スズ−ビスマス合金、スズ−銅合金、及びスズ−銀−銅合金の群から選ばれる少なくとも1種からなることを特徴とする請求項1〜5のいずれか1項に記載の接続端子部材。   The first plating layer is made of at least one selected from the group consisting of tin, tin-silver alloy, tin-bismuth alloy, tin-copper alloy, and tin-silver-copper alloy. The connection terminal member according to any one of 5. 前記第1めっき層の前記挿抜部における厚さが1.5μm以上であることを特徴とする請求項1〜6のいずれか1項に記載の接続端子部材。   The connection terminal member according to claim 1, wherein a thickness of the insertion / extraction portion of the first plating layer is 1.5 μm or more. 前記第1めっき層の前記挿抜部の厚さ(Ts)と前記はんだ付け部との厚さ(Th)の差(Td=Th−Ts)を1.0〜2.7μmとしたことを特徴とする請求項1〜7のいずれか1項に記載の接続端子部材。   The difference (Td = Th−Ts) between the thickness (Ts) of the insertion / extraction portion of the first plating layer and the thickness (Th) of the soldering portion is 1.0 to 2.7 μm, The connection terminal member according to any one of claims 1 to 7. 請求項1〜8のいずれか1項に記載の接続端子部材を具備する接続端子。   A connection terminal comprising the connection terminal member according to claim 1. 導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料をリフローしてなるめっき被膜材であって、前記第1めっき層の厚さを0.3〜3μmとし、前記第2めっき層の厚さを0.05〜0.2μmとしたことを特徴とする接続端子用めっき被膜材。   A plating film material obtained by reflowing a multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer. Then, the thickness of the first plating layer is 0.3 to 3 μm, and the thickness of the second plating layer is 0.05 to 0.2 μm. 前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とする請求項10に記載のめっき被膜材。   The plating film material according to claim 10, wherein the first plating layer is provided with a predetermined thickness portion and a thinner portion. 導電性基材の外側にスズもしくはスズ合金からなる第1めっき層と、該第1めっき層の表面にインジウムからなる第2めっき層とを有する多層めっき材料であって、前記第1めっき層の厚さを0.3〜3μmとし、前記第2めっき層の厚さを0.05〜0.2μmとし、リフローして用いることを特徴とする接続端子用の多層めっき材料。   A multilayer plating material having a first plating layer made of tin or a tin alloy on the outside of a conductive substrate and a second plating layer made of indium on the surface of the first plating layer, A multilayer plating material for connection terminals, wherein the thickness is 0.3 to 3 μm, the thickness of the second plating layer is 0.05 to 0.2 μm, and reflow is used. 前記第1めっき層について、所定の厚さの箇所とそれより薄い箇所とを設けたことを特徴とする請求項12に記載の多層めっき材料   The multilayer plating material according to claim 12, wherein a portion having a predetermined thickness and a portion thinner than the predetermined thickness are provided for the first plating layer. 導電性基材の外側に、スズもしくはスズ合金からなる第1めっき層を形成し、該第1めっき層の表面にインジウムからなる第2めっき層を形成して接続端子部材の多層めっき材料とし、該多層めっき材料をリフローして挿抜部とはんだ付け部とを有する接続端子部材とするに当たり、
前記第1めっき層について、前記挿抜部における厚さを0.3〜3μmとし、かつ前記はんだ付け部における厚さを前記挿抜部の厚さより厚くし、他方、前記第2めっき層の厚さを0.05〜0.2μmとして前記多層めっき材料とし、該多層めっき材料をリフローして接続端子部材とすることを特徴とするめっき被膜接続端子部材の製造方法。
Forming a first plating layer made of tin or a tin alloy on the outside of the conductive base material, forming a second plating layer made of indium on the surface of the first plating layer, and forming a multilayer plating material for the connection terminal member; In reflowing the multilayer plating material to form a connection terminal member having an insertion / extraction portion and a soldering portion,
Regarding the first plating layer, the thickness at the insertion / extraction portion is set to 0.3 to 3 μm, and the thickness at the soldering portion is made thicker than the thickness of the insertion / extraction portion, while the thickness of the second plating layer is set to A method for producing a plating film connection terminal member, characterized in that the multilayer plating material is 0.05 to 0.2 μm, and the multilayer plating material is reflowed to form a connection terminal member.
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