JP2010277642A5 - - Google Patents

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Publication number
JP2010277642A5
JP2010277642A5 JP2009128979A JP2009128979A JP2010277642A5 JP 2010277642 A5 JP2010277642 A5 JP 2010277642A5 JP 2009128979 A JP2009128979 A JP 2009128979A JP 2009128979 A JP2009128979 A JP 2009128979A JP 2010277642 A5 JP2010277642 A5 JP 2010277642A5
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JP
Japan
Prior art keywords
entry
voltage
generates
match
memory array
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JP2009128979A
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Japanese (ja)
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JP2010277642A (en
JP5578344B2 (en
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Priority to JP2009128979A priority Critical patent/JP5578344B2/en
Priority claimed from JP2009128979A external-priority patent/JP5578344B2/en
Publication of JP2010277642A publication Critical patent/JP2010277642A/en
Publication of JP2010277642A5 publication Critical patent/JP2010277642A5/ja
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Publication of JP5578344B2 publication Critical patent/JP5578344B2/en
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Claims (1)

各々が行方向に配列される連想メモリセルを含み、参照データを格納する複数のエントリを有するメモリアレイ、
各エントリに対応して配置され、各々が対応のエントリの連想メモリセルに結合されるともに所定のプリチャージ電圧にプリチャージされ、各々が対応のエントリの参照データと与えられた検索データとの一致/不一致に応じた電圧を伝達する複数のマッチ線、
各エントリに対応して配置され、各々が対応のエントリのマッチ線の電圧を参照電圧と比較し、該比較結果に応じた信号を出力する複数のマッチアンプ、
前記メモリアレイと同一半導体基板に形成されるモニタ用トランジスタを含み、前記モニタ用トランジスタを流れる電流に応じた信号を生成する電流モニタ回路、および
前記電流モニタ回路の出力信号に従って発生電圧のレベルを調整して、前記プリチャージ電圧および前記参照電圧のうちの少なくとも1つの電圧を発生する電源回路を備える、半導体装置。
A memory array including a plurality of associative memory cells each arranged in a row direction and having a plurality of entries for storing reference data;
Arranged corresponding to each entry, each coupled to the associative memory cell of the corresponding entry and precharged to a predetermined precharge voltage, each matching the reference data of the corresponding entry and the provided search data / Multiple match lines that transmit voltage according to mismatch
A plurality of match amplifiers arranged corresponding to each entry, each of which compares a match line voltage of a corresponding entry with a reference voltage and outputs a signal corresponding to the comparison result;
A current monitor circuit that includes a monitor transistor formed on the same semiconductor substrate as the memory array, and that generates a signal corresponding to the current flowing through the monitor transistor; A semiconductor device comprising a power supply circuit that generates at least one of the precharge voltage and the reference voltage.
JP2009128979A 2009-05-28 2009-05-28 Semiconductor device Expired - Fee Related JP5578344B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009128979A JP5578344B2 (en) 2009-05-28 2009-05-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009128979A JP5578344B2 (en) 2009-05-28 2009-05-28 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2010277642A JP2010277642A (en) 2010-12-09
JP2010277642A5 true JP2010277642A5 (en) 2012-03-22
JP5578344B2 JP5578344B2 (en) 2014-08-27

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Family Applications (1)

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JP2009128979A Expired - Fee Related JP5578344B2 (en) 2009-05-28 2009-05-28 Semiconductor device

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JP (1) JP5578344B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017097940A (en) * 2015-11-26 2017-06-01 ルネサスエレクトロニクス株式会社 Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004165649A (en) * 2002-10-21 2004-06-10 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device
JP2007317342A (en) * 2006-04-25 2007-12-06 Renesas Technology Corp Content addressable memory
JP2008099032A (en) * 2006-10-12 2008-04-24 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device

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