JP2010276360A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To precisely measure low resistance in a semiconductor device without changing socket structure at the side of an inspection unit. <P>SOLUTION: Switch elements 13, 14 are provided between both the ends of a resistor 1 and external terminals 7, 8 for internal circuits 9, 10, and switch elements 15, 16 are provided between the internal circuits 9, 10 and the external terminals 7, 8. When measuring the value of resistance of the resistor 1, a switch selection section 17 turns on the switch elements 13, 14 and turns off the switch elements 15, 16, thus electrically connecting the four external terminals 3, 4, 7, 8 to the resistor 1 for enabling four-terminal measurement. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a technique for measuring an internal resistance component of a semiconductor device with high accuracy.

  For example, in the case of a semiconductor device for driving a motor, a power transistor is built in the device, and the motor is driven by supplying electric power. The on-resistance when the power transistor is fully turned on is a very important factor in the specifications of a semiconductor device for driving a motor. The value of this on-resistance is several hundreds in order to reduce power loss in the semiconductor device. A small value of mΩ to several Ω is required. For the reasons described above, this on-resistance needs to be measured with high accuracy during the shipping inspection of the semiconductor device.

  In order to measure the on-resistance with high accuracy, a harmful effect is the contact resistance between the semiconductor device and the measuring device. This will be described with reference to FIG. 103 and 104 are external terminals, 119 is a measurement pin, and 118 is a contact resistance. The value of the contact resistance 118 is not constant, and may increase as the number of measurements increases due to contamination of the contact portion of the measuring device, and may increase to about 1Ω. For this reason, it is necessary to exclude it when measuring an on-resistance of several hundred mΩ to several Ω.

  FIG. 5 shows a measurement method when the package shape is a package with leads such as QFP (Quad Flat Package). 201 is a package lead, 202 is a current force probe, 204 is a voltage sensing probe, and 203 and 205 are contact resistances. Separately from the actual current path, the voltage sensing probe 204 for monitoring the voltage at the lead itself is provided at both ends, so that the influence of the contact resistances 203 and 205 is eliminated, and the on-state is accurately turned on. Resistance can be measured.

  In the above description, the measurement of the on-resistance of the power transistor has been described as an example.

JP 2005-249447 A

  In recent years, not only miniaturization of equipment but also reduction of the number of internal mounting boards has necessitated downsizing of the semiconductor device itself mounted on the board. On the other hand, the semiconductor device also needs to incorporate multiple functions in one package, and the number of external terminals of the semiconductor device tends to increase. The large number of external terminals and the miniaturization can be realized not by the configuration in which the external terminals are arranged in the periphery as in the prior art, but by arranging the external terminals in a lattice shape on the lower surface of the package and joining the balls to the external terminals This is a (Ball Grid Array) type package. In digital still cameras, camcorders, etc., this BGA type package is becoming standard.

  Regarding this BGA type package, Patent Document 1 discloses a method capable of realizing resistance four-terminal measurement by making a pin in contact with a ball into a double structure, one being a current force pin and the other being a voltage sense pin. Has been.

  However, this structure is theoretically possible, but the structure of the socket side on the tester side will be changed, and the package with a specification with a narrow ball pitch (ball-to-ball distance) that enables further miniaturization. In this case, there are strength and reliability problems, and the current situation is that they are not put into practical use. Therefore, there is a problem that the low resistance in the semiconductor device cannot be measured with high accuracy.

  An object of the present invention is to solve the above-described problems, and to make it possible to measure a low resistance in a semiconductor device with high accuracy without changing a socket structure on the side of an inspector.

  In the first aspect of the present invention, as a semiconductor device, at least one resistor, an internal circuit, first and second external terminals directly connected to both ends of the resistor, and the internal circuit Provided between the third and fourth external terminals, one end of the resistor and the third external terminal, and between the other end of the resistor and the fourth external terminal, respectively. The first and second switch elements that can be switched between conduction and non-conduction, and provided between the internal circuit and the third and fourth external terminals, respectively, can be switched between conduction and non-conduction. A third and fourth switch elements, and a switch switching unit that selectively controls conduction / non-conduction of the first to fourth switch elements are provided.

  According to this aspect, the switch switching unit causes the first and second switch elements to be in a conductive state, and causes the third and fourth switch elements to be in a non-conductive state, whereby the third and second switch elements for the internal circuit are provided. 4 external terminals are electrically disconnected from the internal circuit and electrically connected to both ends of the resistor. That is, when measuring the resistance value of the resistor, the first to fourth external terminals can be connected to the resistor. Therefore, for example, the first and second external terminals directly connected to the resistor are the current force terminals, and the third and fourth external terminals connected via the switch elements are the voltage sense terminals. Terminal measurement is possible.

  In the second aspect of the present invention, as a semiconductor device, at least one resistor, an internal circuit, first and second external terminals directly connected to both ends of the resistor, and the internal circuit Provided between the third and fourth external terminals, one end of the resistor and the third external terminal, and between the other end of the resistor and the fourth external terminal, respectively. The first and second switch elements that can be switched between conduction and non-conduction, a switch switching unit that selectively controls conduction / non-conduction of the first and second switch elements, and the internal circuit And an output function stop unit for controlling whether to enter the normal operation state or the output function stop state.

  According to this aspect, the switch switching unit brings the first and second switch elements into the conductive state, and the output function stop unit sets the internal circuit in the output stop state, whereby the third and second switches for the internal circuit. 4 external terminals are electrically disconnected from the internal circuit and electrically connected to both ends of the resistor. That is, when measuring the resistance value of the resistor, the first to fourth external terminals can be connected to the resistor. Therefore, for example, the first and second external terminals directly connected to the resistor are the current force terminals, and the third and fourth external terminals connected via the switch elements are the voltage sense terminals. Terminal measurement is possible.

  In the third aspect of the present invention, the semiconductor device includes first and second H bridge circuits each having two output terminals, a power supply terminal and a ground terminal, and each transistor of the first H bridge circuit. An H-bridge gate drive circuit for controlling on / off, and two output terminals of the first H-bridge circuit and one output terminal of the second H-bridge circuit, respectively. Conductive first and second switching elements, and a power supply terminal and a ground terminal of the first H bridge circuit and the other output terminal of the second H bridge circuit, respectively. The third and fourth switch elements that can be switched between conduction and non-conduction, and a switch switching unit that selectively controls conduction / non-conduction of the first to fourth switch elements. .

  According to this aspect, the switch switching unit sets one of the first and second switch elements to the conductive state and the other to the non-conductive state, and sets one of the third and fourth switch elements to the conductive state and the other. Is made non-conductive, so that the two output terminals of the second H-bridge circuit are electrically connected to the source and drain of one transistor of the first H-bridge circuit. That is, when measuring the on-resistance of the transistor, it is possible to connect four external terminals including the two output terminals of the second H-bridge circuit to the transistor. Therefore, for example, by using the external terminal directly connected to the transistor as the current force terminal and the two output terminals of the second H bridge circuit connected via the switch element as voltage sense terminals, the four-terminal measurement can be performed. It becomes possible.

  According to the semiconductor device of the present invention, it is possible to connect four external terminals to the resistor or the transistor by controlling the switch element. As a result, four-terminal measurement is possible, so that the resistance value can be measured with high accuracy. In addition, it is not necessary to change the structure of the socket on the inspection device side.

It is a figure which shows the structural example of the semiconductor device which concerns on the 1st Embodiment of this invention. It is a figure which shows the structural example of the semiconductor device which concerns on the 2nd Embodiment of this invention. It is a figure which shows the structural example of the semiconductor device which concerns on the 3rd Embodiment of this invention. It is a figure which shows the structural example of the conventional semiconductor device. It is a figure which shows the structural example of the conventional semiconductor device.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the numbers and the like described in the embodiments are all exemplified for specifically explaining the present invention, and the present invention is not limited to these.

(First embodiment)
FIG. 1 is a diagram illustrating a configuration example of the semiconductor device according to the first embodiment. In FIG. 1, 1 and 2 are power transistors as resistors, and 9 and 10 are internal circuits. Reference numerals 3 and 4 denote external terminals directly connected to both ends of the power transistor 1, that is, the source and drain, respectively. Reference numerals 5 and 6 denote external terminals directly connected to both ends of the power transistor 2, that is, the source and drain. External terminals for internal circuits 9 and 10. Reference numeral 19 denotes a measurement pin, and reference numeral 18 denotes a contact resistance between the measurement pin 19 and the external terminal 3.

  Switching elements 13 and 14 that can be switched between conduction and non-conduction are provided between one end of the power transistor 1 and the external terminal 7 and between the other end of the power transistor 1 and the external terminal 8, respectively. . Similarly, switch elements 11 and 12 that can be switched between conduction and non-conduction are provided between one end of the power transistor 2 and the external terminal 7 and between the other end of the power transistor 2 and the external terminal 8, respectively. It has been. In addition, switching elements 15 and 16 that can be switched between conductive and non-conductive are provided between the internal circuit 9 and the external terminal 7 and between the internal circuit 10 and the external terminal 8, respectively. And the switch switching part 17 for controlling each switch element 11-16 is provided. The switch switching unit 17 selectively controls conduction / non-conduction of the switch elements 11 to 16.

  During normal operation, the switch switching unit 17 brings the switch elements 15 and 16 into a conductive state and all the switch elements 11, 12, 13, and 14 into a non-conductive state. In this case, the external terminals 7 and 8 are connected to the internal circuits 9 and 10, respectively, and are electrically insulated from the power transistors 1 and 2.

  When measuring the on-resistance of the power transistor 1, the switch switching unit 17 brings the switch elements 13 and 14 into a conductive state and the switch elements 15 and 16 into a non-conductive state. The switch elements 11 and 12 are also turned off. As a result, the source and drain of the power transistor 1 are connected to the external terminals 7 and 8 via the switch elements 13 and 14, respectively. In this state, the external terminals 3 and 4 directly connected to the source and drain of the power transistor 1 are used as current force terminals, and the external terminals connected to the source and drain of the power transistor 1 through the switch elements 13 and 14 are used. Terminals 7 and 8 are used as voltage sense terminals. As a result, the four-terminal measurement of the on-resistance of the power transistor 1 becomes possible, and a highly accurate measurement can be realized.

  Similarly, when the on-resistance of the power transistor 2 is measured, the switch switching unit 17 sets the switch elements 11 and 12 in the conductive state and sets the switch elements 15 and 16 in the non-conductive state. The switch elements 13 and 14 are also kept nonconductive. As a result, the source and drain of the power transistor 2 are connected to the external terminals 7 and 8 via the switch elements 11 and 12, respectively. In this state, the external terminals 5 and 6 directly connected to the source and drain of the power transistor 2 are used as current force terminals, and the external terminals connected to the source and drain of the power transistor 2 through the switch elements 11 and 12 are used. Terminals 7 and 8 are used as voltage sense terminals. Thereby, four-terminal measurement of the on-resistance of the power transistor 2 becomes possible, and high-precision measurement can be realized.

  Although not shown in the figure, even when there are two or more power transistors, by adding a switch element to the external terminals 7 and 8, on-resistance can be similarly measured at four terminals, and high-precision measurement is possible. It is clear that is possible.

(Second Embodiment)
FIG. 2 is a diagram illustrating a configuration example of the semiconductor device according to the second embodiment. 2, the same components as those in FIG. 1 are denoted by the same reference numerals as those in FIG. 1, and detailed description thereof is omitted here.

  1 is different from the configuration of FIG. 1 in that the internal circuits 9 and 10 and the external terminals 7 and 8 are directly connected and the switch elements 15 and 16 are omitted. The output function stop unit 20 is provided to control whether to set the normal operation state or the output function stop state. The switch switching unit 17A selectively controls conduction / non-conduction of the switch elements 11-14. Other configurations are the same as those in FIG.

  During normal operation, the output function stop unit 20 puts the internal circuits 9 and 10 into a normal operation state, and the switch switching unit 17A puts all the switch elements 11, 12, 13, and 14 into a non-conduction state. In this case, the external terminals 7 and 8 are connected to the internal circuits 9 and 10, respectively, and are electrically insulated from the power transistors 1 and 2.

  When measuring the on-resistance of the power transistor 1, the switch switching unit 17A brings the switch elements 13 and 14 into a conductive state. The switch elements 11 and 12 are kept nonconductive. Further, the output function stop unit 20 puts the internal circuits 9 and 10 into the output function stop state. The outputs of the internal circuits 9 and 10 are in a high impedance state. As a result, the source and drain of the power transistor 1 are connected to the external terminals 7 and 8 via the switch elements 13 and 14, respectively. In this state, the external terminals 3 and 4 directly connected to the source and drain of the power transistor 1 are used as current force terminals, and the external terminals connected to the source and drain of the power transistor 1 through the switch elements 13 and 14 are used. Terminals 7 and 8 are used as voltage sense terminals. As a result, the four-terminal measurement of the on-resistance of the power transistor 1 becomes possible, and a highly accurate measurement can be realized.

  When measuring the on-resistance of the power transistor 2, the switch switching unit 17A brings the switch elements 11 and 12 into a conductive state. The switch elements 13 and 14 are kept nonconductive. Further, the output function stop unit 20 puts the internal circuits 9 and 10 into the output function stop state. The outputs of the internal circuits 9 and 10 are in a high impedance state. As a result, the source and drain of the power transistor 2 are connected to the external terminals 7 and 8 via the switch elements 11 and 12, respectively. In this state, the external terminals 5 and 6 directly connected to the source and drain of the power transistor 2 are used as current force terminals, and the external terminals connected to the source and drain of the power transistor 2 through the switch elements 13 and 14 are used. Terminals 7 and 8 are used as voltage sense terminals. Thereby, four-terminal measurement of the on-resistance of the power transistor 2 becomes possible, and high-precision measurement can be realized.

  Although not shown in the figure, even when there are two or more power transistors, by adding a switch element to the external terminals 7 and 8, on-resistance can be similarly measured at four terminals, and high-precision measurement is possible. It is clear that is possible.

(Third embodiment)
FIG. 3 is a diagram illustrating a configuration example of a semiconductor device according to the third embodiment. In FIG. 3, reference numerals 60 and 61 denote first and second H bridge circuits each having two output terminals, a power supply terminal and a ground terminal, and 59 and 62 denote first and second H bridge circuits 60 and 61, respectively. This is an H-bridge gate drive circuit that controls on / off of each of the transistors. In the first H-bridge circuit 60, 51 is a power supply side power transistor, 54 is a ground side power transistor, 52 is a power supply terminal, 53 and 67 are output terminals, and 68 is a ground terminal. In the second H-bridge circuit 61, 57 and 58 are output terminals.

  Switch elements 56 and 64 that can switch between conduction and non-conduction between the two output terminals 53 and 67 of the first H-bridge circuit 60 and one output terminal 58 of the second H-bridge circuit 61, respectively. Is provided. Further, switching elements 55 that can be switched between conductive and non-conductive between the power supply terminal 52 and ground terminal 68 of the first H bridge circuit 60 and the other output terminal 57 of the second H bridge circuit 61, respectively. 63 is provided. The switch switching unit 66 selectively controls conduction / non-conduction of each switch element 55, 56, 63, 64.

  In the normal state, the switch switching unit 66 sets all the switch elements 55, 56, 63, and 64 to the non-conductive state. The first and second H bridge circuits 60 and 61 are driven by H bridge gate drive circuits 59 and 62, and supply power to, for example, motors connected to the output terminals 53, 67, 57, and 58 outside the semiconductor device. Rotation drive.

  When measuring the on-resistance of the power supply-side power transistor 51, the H bridge gate drive circuit 59 turns off all the power transistors constituting the first H bridge circuit 61. Then, the switch switching unit 66 brings the switch elements 55 and 56 into a conductive state and the switch elements 63 and 64 into a non-conductive state. Thereby, the source of the power-side power transistor 51 is connected to the power terminal 52 and the output terminal 57 of the second H-bridge circuit 61 via the switch element 55, and the output terminal 53 and the switch element 56 are connected to the drain. Is connected to the output terminal 58 of the second H-bridge circuit 61. In this state, the power supply terminal 52 and the output terminal 53 are used as current force terminals, and the output terminals 57 and 58 of the second H bridge circuit 61 are used as voltage sense terminals. As a result, four-terminal measurement of the on-resistance of the power supply side power transistor 51 is possible, and high-precision measurement can be realized.

  When measuring the on-resistance of the ground-side power transistor 54, the H-bridge gate drive circuit 59 similarly turns off all the power transistors constituting the first H-bridge circuit 61. Then, the switch switching unit 66 brings the switch elements 56 and 63 into a conductive state and the switch elements 55 and 64 into a non-conductive state. As a result, the output terminal 53 and the output terminal 58 of the second H-bridge circuit 61 are connected to the source of the ground side power transistor 54 via the switch element 56 together with the output terminal 53, and the switch element 63 together with the ground terminal 68 to the drain. Is connected to the output terminal 57 of the second H-bridge circuit 61. In this state, the output terminal 53 and the ground terminal 68 are used as current force terminals, and the output terminals 57 and 58 of the second H bridge circuit 61 are used as voltage sense terminals. As a result, the four-terminal measurement of the on-resistance of the ground-side power transistor 54 becomes possible, and a highly accurate measurement can be realized.

  Similarly, with respect to the on-resistance of the power supply side and ground side power transistors connected to the output terminal 67 side, the switch switching unit 66 selectively switches conduction / non-conduction of the switch elements 55, 56, 63, 64. Thus, 4-terminal measurement is possible. That is, one of the switch elements 56 and 64 is made conductive and the other is made nonconductive, and one of the switch elements 55 and 63 is made conductive and the other is made nonconductive. The output terminals 57 and 58 of the second H-bridge circuit 61 can be connected to the source / drain of any of the transistors in the circuit 60.

  In the present invention, the resistance value of the semiconductor device can be measured with high accuracy without changing the structure of the socket on the tester side. is there.

1, 2 Power transistor (resistor)
3,5 External terminal (first external terminal)
4,6 External terminal (second external terminal)
7 External terminal (third external terminal)
8 External terminal (4th external terminal)
9, 10 Internal circuit 11, 13 Switch element (first switch element)
12, 14 switch element (second switch element)
15 switch element (third switch element)
16 switch element (fourth switch element)
17, 17A Switch switching unit 20 Output function stop unit 52 Power supply terminal 53 Output terminal 55 Switch element (third switch element)
56 switch element (first switch element)
57, 58 Output terminals 59, 62 H-bridge gate drive circuit 60 First H-bridge circuit 61 Second H-bridge circuit 63 Switch element (fourth switch element)
64 switch element (second switch element)
66 Switch switching section 67 Output terminal 68 Ground terminal

Claims (6)

At least one resistor;
Internal circuitry,
First and second external terminals directly connected to both ends of the resistor,
Third and fourth external terminals for the internal circuit;
Provided between one end of the resistor and the third external terminal, and between the other end of the resistor and the fourth external terminal, and can be switched between conduction and non-conduction. First and second switch elements;
Third and fourth switch elements provided between the internal circuit and the third and fourth external terminals, respectively, which can be switched between conduction and non-conduction;
A semiconductor device comprising: a switch switching unit that selectively controls conduction / non-conduction of the first to fourth switch elements. The semiconductor device according to claim 1,
When measuring the resistance value of the resistor, the switch switching unit sets the first and second switch elements in a conductive state and sets the third and fourth switch elements in a non-conductive state. A semiconductor device characterized by the above. At least one resistor;
Internal circuitry,
First and second external terminals directly connected to both ends of the resistor,
Third and fourth external terminals for the internal circuit;
Provided between one end of the resistor and the third external terminal, and between the other end of the resistor and the fourth external terminal, and can be switched between conduction and non-conduction. First and second switch elements;
A switch switching unit that selectively controls conduction / non-conduction of the first and second switch elements;
A semiconductor device comprising: an output function stop unit that controls whether the internal circuit is in a normal operation state or an output function stop state. The semiconductor device according to claim 3.
When measuring the resistance value of the resistor, the switch switching unit causes the first and second switch elements to be in a conductive state, and the output function stop unit sets the internal circuit to an output function stop state. A semiconductor device characterized by the above. First and second H-bridge circuits each having two output terminals, a power supply terminal and a ground terminal;
An H bridge gate driving circuit for controlling on / off of each transistor of the first H bridge circuit;
The first and second switches are provided between two output terminals of the first H-bridge circuit and one output terminal of the second H-bridge circuit, respectively, and can be switched between conduction and non-conduction. A switch element;
Third and fourth switches that are provided between the power supply terminal and the ground terminal of the first H-bridge circuit and the other output terminal of the second H-bridge circuit, respectively, and can be switched between conduction and non-conduction. A switch element;
A semiconductor device comprising: a switch switching unit that selectively controls conduction / non-conduction of the first to fourth switch elements. The semiconductor device according to claim 5.
When measuring the on-resistance value of one transistor of the first H-bridge circuit, the H-bridge gate drive circuit turns off each transistor of the first H-bridge circuit, and the switch switching unit One of the first and second switch elements is turned on and the other is turned off, and one of the third and fourth switch elements is turned on and the other is turned off. A semiconductor device.

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