JP2010266555A - Pattern forming method of flat panel display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for performing batch restoration over a whole plane of a substrate without causing shape differences, property differences of a defect correction portion and a normal portion and without performing local application, exposure, development, washing, and thermosetting in the restoration of a partition defective part of a flat panel display. <P>SOLUTION: In a partition formed with the predetermined pattern on a substrate by performing a partition resin dispersion application on the substrate, an exposure, a development, a washing and a thermosetting, the partition defective part is restored by re-coating (applying) a solution, in which the same resin as that in the partition is distributed, over a whole substrate plane including a defective part of the partition for the defect detected by an inspection, by correcting alignment positions of the substrate and a reticle, by performing the re-exposure and the re-development in the partition pattern state at the same position, and by forming the partition, and by performing thermosetting of the partition. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a pattern forming method for a flat panel display, and more particularly to a method for correcting a defect of a partition wall of a flat panel display.

  For example, examples of the flat panel display include an organic EL display (hereinafter referred to as OLED) in which an organic light-emitting material is filled in a region partitioned by partition walls, and a plasma display (PDP) in which an inorganic fluorescent material is filled. Moreover, the color filter for liquid crystal displays (LCD) can be manufactured by using a pigment dispersion thermosetting organic material (RGB) for a filler.

  In recent years, the progress of the advanced video information society centered on the Internet has been remarkable, and lifestyles are about to change drastically due to rapid technological innovation. As a result, a display that is easier to view, has a finer screen, and is thinner and lighter has been demanded, and various display methods corresponding to it have been proposed. Typical examples are shown below.

  One is a CRT (Cathode Ray Tube) method used in general televisions. The problem is that as the screen size increases, the depth of the CRT becomes longer and the display inevitably becomes larger and heavier. A method developed for the purpose of improving these disadvantages is an LCD (Liquid Crystal Display). The LCD uses a white backlight (CCFL) as a light source, a liquid crystal element has a function as an optical shutter, a color filter is placed in front of the liquid crystal element, and full-color display is performed by controlling light transmission. Therefore, the color of the image is transmitted light from the filter and corresponds to the extra color. In addition, since the liquid crystal element has a narrow viewing angle, there is also a drawback that visibility from both sides is poor.

  On the other hand, remarkable downsizing is possible as compared with CRT, and it is frequently used as a display for a wall-mounted television or a notebook PC. Furthermore, a system using PDP (Plasma display panel) has been developed, and commercially available televisions are thin and light. The PDP uses a plasma discharge tube of light of three primary colors as a light source, and a filter that shields electron beams and near infrared rays on the surface.

  Another method is OLED (Organic Light Emitting Diode), which is only 2 mm in thickness including the substrate and the sealing, and enables significant downsizing. In addition, the three primary colors of light are self-luminous and surface-emitting so that a wide viewing angle can be obtained, and a high-contrast property and high-speed response can be obtained.

  Furthermore, it does not require a backlight, operates on a battery with low voltage drive and low power consumption. At present, it is used for mobile phones and in-vehicle displays because of its technical ease, and then it is thought that it will be put into practical use step by step in PCs and televisions. In addition, the device structure of the OLED is greatly different from the preceding CRT, LCD, PDP, and the like. While all other systems have a cell structure, an OLED can function by simply laminating a solid thin film on a substrate. This means that it is superior in principle in thinness / lightness, impact resistance and flexibility. In addition, there is no restriction on the enlargement of the screen, and it is expected that the manufacturing cost can be kept low.

  The organic EL element has a structure in which an organic light emitting layer is sandwiched between two electrodes, and causes the organic light emitting layer to emit light by passing a current between the electrodes. Although the organic light emitting layer includes one to a plurality of layers, the thickness of each layer is very important in order to emit light efficiently, and the entire organic light emitting layer needs to be a thin film of 1 μm or less. Furthermore, in order to make this a display, it is necessary to pattern the organic light emitting layer with high definition, and this patterning method becomes an important issue.

  Moreover, in order to take out the emitted light, it is necessary to make one of the electrodes transparent. It has been proposed to use a transparent conductive film made of indium / tin oxide (ITO) or the like as the transparent electrode (see, for example, Patent Document 1).

  FIG. 7 is a schematic cross-sectional view showing the configuration of the organic EL display described in Patent Document 1.

  The film formation method of the organic EL element is roughly classified into a dry method and a wet method. In the dry method, a low molecular material is vacuum-deposited to form a thin film. The low molecular weight hole injection material and the light emitting material are preferably compounds having a molecular weight (Mw) of about 350 or more in order to prevent re-evaporation from the substrate in a vacuum. In order to prevent decomposition and carbonization, a material having a Mw of about 1200 or less is usually used so that a sufficient vapor deposition rate can be obtained at a low evaporation source temperature of 500 ° C. or less.

  Many low molecular weight materials that can be deposited have a low intermolecular force. Since such materials are easy to move, have a small molecular weight, and have a simple molecular structure, an organic film formed using a solution obtained by dissolving in an organic solvent will be associated with each other over time. As a result, the film is crystallized, and the film tends to be uneven. Therefore, when an organic EL element is manufactured using such an organic film, there is a problem that a pinhole is generated in the film and a short circuit occurs during driving. In contrast, even a low molecular weight material can prevent crystallization by using an asymmetric three-dimensional amorphous molecular structure. It is conceivable to form.

  In the dry method (low molecular vapor deposition method), the organic EL material placed in the crucible is evaporated by resistance heating, and a thin film is stacked on the substrate. When three-color organic light emitting layers are juxtaposed, a wet method such as photolithography is not applicable because it damages the underlying organic layer. Therefore, it is necessary to form a film only in a necessary portion using a shadow mask. In order to increase the pattern accuracy, it is necessary to increase the distance between the crucible and the substrate, which increases the size of the apparatus. A vapor deposition tank for each organic material is required for continuous operation. For this reason, an apparatus becomes large and an initial investment becomes large. In addition, highly accurate mask alignment is required.

  In the wet method, a polymer material is dissolved or dispersed in a solvent, and a thin film is formed as a solution (ink) on a substrate by spin coating or printing (inkjet, gravure printing, offset printing, etc.) and dried. Form. In addition, by using water-soluble poly (3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (hereinafter PEDOT / PSS) as the hole injection layer, an organic solvent that does not mix with water is used on the layer. A layer (electronic blocking layer) or a light emitting layer can be laminated. On the other hand, in the printing method, since the ink has fluidity, it is necessary to provide a partition wall (partition member), fill the ink in the partition, mix the ink (color mixing), and eliminate the dot shape collapse.

  When filling a pixel area with an organic light emitting material (ink), in order to prevent the discharged ink from flowing out to the adjacent pixel area, a partition that partitions the pixel area is provided, and the pixel area surrounded by the partition Fill with ink. The pixel area surrounded by the partition walls is filled with ink that is much larger than the volume after film formation. However, since the display device is generally required to be thin, the partition wall cannot be formed to be excessively high. For this reason, the behavior of the filled ink differs depending on the wettability (affinity) of the partition wall and the pixel region surrounded by the partition wall.

  Conventionally, as a technique for forming a coating film having a relatively thin film thickness on a semiconductor substrate, a liquid crystal display device, a color filter substrate, or the like, a coating method such as a spin coating method or a roll coating method is known. . Of these coating methods, the spin coating method is generally preferred when a thin and uniform coating film on the order of μm is formed. This spin coating method is generated by holding a substrate to be coated on which a coating film is formed on a spin chuck, dropping a liquid material to be coated, such as a resist material, in the center, and then rotating the substrate at a high speed. This is a method of forming a coating film by diffusing the liquid material from the center of the substrate toward the outer periphery by centrifugal force.

  The photolithographic method is a series of processes in which a photoresist (photosensitive resin) dispersion liquid is applied onto a substrate, followed by exposure, development, and etching to remove used photoresist. When the process is roughly classified into two, in the first half, a circuit pattern is transferred to the photoresist film, that is, a photoresist processing step is performed. The latter half is processing of the base film using the photoresist pattern, that is, etching and photoresist removal. The first half of the photolithography process is until the development in the photolithography process, and finally the circuit pattern is baked on the photoresist. The circuit pattern is selectively irradiated with ultraviolet rays (UV) onto the photoresist film from the reticle by the exposure apparatus, and the pattern is produced as a latent image by the photochemical reaction inside the photoresist. It is revealed as an image by development.

  Photoresists are a product of the development of photosensitive polymer materials that have sufficient sensitivity to the wavelength of ultraviolet rays used for each generation and that can achieve high resolution. Metal contamination and particle management are strictly performed, and it is a material that requires homogeneity within and between lots, and is a product of fine chemistry. Although it is a general material, the added value for ULSI is extremely high. At the same time as the wavelength of the light source is shortened, the requirements for photoresist characteristics are becoming strict, and a high management level is required for baking and development conditions. In particular, in chemically amplified resists for lithography using KrF and ArF light sources, it is said that handling, for example, temperature control during baking, requires much different strictness.

  Photoresist is usually obtained by dissolving a photosensitive resin component in an organic solvent, and is formed on a substrate by spin coating or the like. As the apparatus, a system called a wafer track in which a spin coater, a baking oven or the like is inlined is used. There are two types of photoresists, negative and positive. Currently, positive is the mainstream in terms of resolution. In the negative type, the exposed portion is polymerized and cured, and the unexposed portion is eluted by development, and an image is formed by the exposed portion. On the other hand, in the positive type, the exposed portion is depolymerized or changed into a structure soluble in the developer, and an unexposed portion is left by development. Therefore, when the same base film pattern is formed, a reticle having a black / white reversal pattern is used for the negative type and the positive type.

  In the negative type, the resist pattern (exposed part) to be left swells with the developer and lowers the resolution. Therefore, even if the stability, fixability, and handling are delicate and difficult, the positive type can be obtained. Used. The positive type contains a photosensitive material (quinonediazide compound) and a phenolic resin in an organic solvent, and is insoluble in alkali. However, it is decomposed by light irradiation (changed to carboxylic acid and improved in solubility in alkali) and becomes alkali-soluble. Therefore, when an alkaline solution is used, the pattern can be developed. The negative type contains a photosensitive bisdiazide compound and a cyclized rubber resin in an organic solvent. Crosslinking occurs when irradiated with light, polymerizes and cures, and becomes insoluble in xylene used as a developer. . That is, the pattern can be developed by causing a difference in solubility between the exposed portion and the unexposed portion.

  The photoresist is being improved with the shortening of the wavelength of the photo aligner light source (g line 436 nm to i line 365 nm).

Japanese Patent No. 3501148 JP 2007-90303 A

  In recent years, it has become difficult to manufacture an OLED without any defects due to an increase in dust and foreign matters in the OLED surface as the substrate size increases. Therefore, in the OLED manufacturing process, the origin of dust and foreign matter is grasped and countermeasures are taken to remove it. For the partition walls and organic light-emitting layers that are defective due to dust and foreign matter, the defective portion is corrected to make it non-defective. It has become important to reduce manufacturing costs.

  As a method for correcting a defect portion of a partition wall or an organic light emitting layer, a local ejection method such as a needle method, a dispensing method, an ink jet method or the like is known. However, in the local ejection method, it is necessary to increase the control range of the ejection amount depending on the defect form, and in addition to the droplet wetting and spreading after ejection, there is a difference in the shape of the normal part and the corrected part, the surface water repellency, etc. There's a problem. On the other hand, considering the environmental sensitivity (resistance) of the formed film, it is necessary to increase the viscosity of the dispersion in order to shorten the drying time of the corrected part, to lower the boiling point of the solvent, and to suppress wetting and spreading. If this is done, the dispersion may cause clogging of the head or non-ejection.

  In addition, local heating (thermosetting) is difficult due to heat propagation to the surrounding area (change in latent heat history) in the modification of barrier ribs and organic light-emitting layers. This is also the difference in the degree of crosslinking or polymerization between the normal part and the corrected part. In that respect, it affects the characteristics.

  The present invention has been made in order to solve the above-mentioned problems. In the correction of the defect portion of the partition wall of the flat panel display, there is no difference in shape between the defect correction portion and the normal portion, the characteristic difference, and the defect correction portion. Thus, there is provided a method of performing batch correction over the entire surface of the substrate without performing local application, exposure, development, cleaning, and thermal curing.

  In order to solve the above-mentioned problems, the present invention is a method for correcting defects in partition walls formed in a predetermined pattern on a substrate by using a photolithography technique. In the partition formed in a predetermined pattern on the substrate by developing, washing, and thermosetting, the defects detected by inspection are dispersed over the entire surface of the substrate including the defective portion of the partition, and the same resin as the partition is dispersed. Recoat (apply) the solution, align the substrate and reticle, re-exposure and re-develop into the partition pattern at the same position, form the partition, reheat the substrate, and heat the partition It is a pattern formation method characterized by hardening.

  The partition formation process is repeated without performing local discharge or heating of the partition resin dispersion on the defects of the partition formed on the substrate, and also when using a partition resin with a different development type from the initial one. The defect of the partition wall can be corrected by a simple method.

Explanatory drawing of the negative resist process (mask alignment-PEB) of the present invention Explanatory drawing of positive resist process (mask alignment-PEB) of the present invention Schematic diagram of the resist coating process on the entire surface of the substrate including the defective part of the present invention Schematic diagram of the exposure process to the entire surface of the substrate including the defective part of the present invention Schematic diagram of the development process on the entire surface of the substrate including the defective part of the present invention Schematic diagram of substrate after defect repair (after PEB) of the present invention Schematic cross section showing the structure of a conventional organic EL display

  Embodiments of the present invention will be specifically described below with reference to the drawings.

  FIG. 1 is an explanatory diagram of the negative resist process (mask alignment to PEB) of the present invention, FIG. 2 is an explanatory diagram of the positive resist process (mask alignment to PEB), and resist on the entire surface of the base material including the defective portion. FIG. 3 is a schematic diagram of the coating process, FIG. 4 is a schematic diagram of the exposure process on the entire surface of the substrate including the defective part, and FIG. 5 is a schematic diagram of the development process on the entire surface of the substrate including the defective part. The schematic diagram of the base material after defect repair (after PEB) is shown in FIG.

  In FIG. 1, a negative resist 7 is applied to the entire surface of a substrate by a spin coating method or a slit coating method on a glass substrate 5 on which a hole injection layer which is an underlayer 6 is formed. Next, the coated substrate and the reticle 2 are combined while correcting the alignment position, and the UV light 1 is irradiated with a pattern via the Cr masking portion 2b to perform exposure. Next, it is a negative photolithography process in which an alkali developer 29 is sprayed onto the exposed substrate by the shower head 27 to elute unexposed portions, followed by drying and thermal curing (PEB). .

  In FIG. 2, a positive resist 7 is applied to the whole surface of the substrate by a spin coat method or a slit coat method on a glass substrate 5 on which a hole injection layer which is the base layer 6 is formed. Next, the coated substrate and the reticle 2 are combined while correcting the alignment position, and the UV light 1 is irradiated with a pattern via the Cr masking portion 2b to perform exposure. Next, it is a positive photolithography process in which an alkali developer 29 is sprayed onto the exposed substrate by a shower head 27 to elute the depolymerized exposed portion, followed by drying and thermosetting.

  A resist in which a partition wall resin material is dissolved or dispersed in a solvent uniformly wets and spreads a coating film of about several μm on the substrate, and forms a thin film of about 1 μm on the substrate after drying. It becomes about s. When the dispersion viscosity is 10 mPa · s or more, the coating film is formed thick by centrifugal force particularly in the peripheral portion, and the height of the partition formed in the substrate surface becomes non-uniform. Further, in coating, developing, cleaning, and thermosetting, it is necessary to increase the cleanliness in the wafer track in order to suppress contamination, dust, and the like into the coating material.

  Further, in development and thermosetting, the fluorine component doped for imparting a liquid repellency to the resist is prevented from being exposed (migrated) as a residue between adjacent partition walls, and residual moisture and outgassing due to unpromoted reaction are prevented. In order to suppress it, it is also necessary to perform thermosetting (drying and baking) in a reduced pressure state.

  On the other hand, such a resist easily adsorbs moisture in the atmosphere, and further, the bulk resin resin is hydrolyzed, thereby causing a decrease in molecular weight and a viscosity change. For this reason, a completely sealed liquid supply and application mechanism is required to cope with changes in resist viscosity.

  In FIG. 3, a substrate 12 on which a partition pattern defect is detected is placed on a substrate suction stage 14, and a lift adjustment shaft 11 for gap adjustment between the substrate and the tip of the ejection head 10 is further provided on the stage. The substrate suction stage is provided with a mechanism that rotates at high speed (500 rpm or more) about the substrate suction stage rotating shaft 15. Further, the resist supply container 17 and the discharge head 10 are directly connected by a resist supply pipe 18, and the resist supply container 17 is provided with a micropore filter 16 for preventing resist viscosity change and resist contamination such as contamination and dust. Thereby, a well-balanced coating film is formed on the substrate without impurities being mixed.

  The size of the substrate suction stage is a square with a side of 150 mm, and is a specification that can be mounted up to 5 inches in panel substrate size.

  In FIG. 4, an exposure XYθ substrate stage 22 includes a substrate 21 filled with a resist between adjacent barrier ribs including a barrier rib pattern defect portion, and is further directly above the substrate at a certain distance. A reticle 2 for performing proximity (proximity) exposure splits the UV light 1 irradiated from the photo aligner light source and arranges it so that the alignment position is corrected so as to be irradiated on the upper part of each partition or between adjacent partitions. . The alignment position is corrected by detecting and correcting the alignment mark 24 deviation with respect to the XYθ substrate stage 22 by the CCD camera 23 arranged at a diagonal position.

  In FIG. 5, a developing XY substrate stage 28 includes a substrate which is exposed to a resist after being filled with a resist between adjacent barrier ribs including a defective portion of the barrier rib pattern, and a shower provided in the gantry 25. The shower head 27 is movable at a constant speed in the Y direction via the guide rail 26 so that an alkali developer (TMAH: Tetramethyl ammonium hydroxide) 29 is sprayed from the head 27 onto the entire surface of the substrate.

  6 shows a substrate in which the partition pattern defects have been repaired through the partition resin dispersion coating step shown in FIG. 3, the exposure step shown in FIG. 4, and the development step shown in FIG.

(Example)
A glass substrate having a thickness of 0.7 mm is used as the substrate, and after 50 nm of tungsten oxide (WOx) is formed on the substrate by reactive sputtering, a negative acrylic resin dispersion liquid doped with fluorine is spun onto the substrate. The coating method was applied. Next, after substrate pre-baking (solvent drying) at 110 ° C. for 3 minutes with a hot air circulating dryer, h rays with a wavelength of 405 nm are emitted with a reticle placed just above the substrate at a certain distance. Proximity exposure was performed by irradiating 60 seconds from the top of the reticle.

  Finally, an alkali developer (0.2% TMAH) is sprayed on the entire surface of the substrate, and further washed with ozone water, and then subjected to substrate PEB (partition wall thermosetting) at 220 ° C. for 60 minutes in a hot air circulating dryer. Thus, a stripe pattern tapered partition having a partition pitch of 60 μm, a partition width of 40 μm, and a partition height of 1 μm was formed on the glass substrate.

  With respect to the tapered partition formed on the substrate, non-contact three-dimensional shape measurement was performed by an optical interference type planar shape measuring instrument, and pattern defects such as partition width, height abnormality, and partition defect due to minute foreign matter were detected. After this measurement, as shown in the schematic diagram of FIG. 3, a resist having the same composition as the dispersion liquid initially applied to the entire surface of the substrate including the partition pattern defect portion is applied to the detected pattern defects by spin coating. (Process flow: partition defect correction step-resist application). In this application, the resist is filled only between the adjacent partition walls due to the water repellent action on the top surface of the partition top after PEB, and the height of the partition walls already formed does not change.

  Next, as shown in the schematic diagram of FIG. 4, as in the initial step, after pre-baking the coated substrate, the alignment position of the substrate and the reticle is corrected so that the partition formation position is exposed, and the proximity exposure is performed again. (Process flow: partition defect correction step-alignment exposure). This exposure masks (shields) the UV light irradiation between adjacent partition walls by alignment position correction, and irradiates only the partition wall formation position. The width of the already formed partition wall may change. Absent. In addition, since the reaction of the partition formed in the initial step is terminated by crosslinking by light irradiation and polymerization curing by heating, the hydrophilicity / hydrophobicity of the partition surface by re-exposure does not change.

  Finally, as shown in the schematic diagram of FIG. 5, as in the initial step, an alkali developer (0.2% TMAH) is sprayed on the entire surface of the exposure processing substrate and development is performed (process flow: partition defect correction step-development). ), Cleaning and substrate PEB were performed again to form a latent image again as shown in the schematic diagram of FIG.

  After the above process was completed, the non-contact three-dimensional shape measurement (N = 3) was similarly performed on the partition pattern defect. As a result, there was no alignment position shift, the partition pitch, the difference with respect to the normal portion of the width ± 5 nm, and the partition height It was confirmed that the partition wall was repaired with a difference of ± 0.1 μm from the normal part. In this correction process, the defect can be repaired only by performing the photolithography process twice without performing local application, exposure, development, cleaning, and thermosetting on the partition pattern defect portion, and micro discharge is performed. There is no need to install new equipment or create a resist. In view of the above points, it can be said that this method is effective in reducing the shape and characteristic difference from the normal partition wall.

  The method for correcting the partition of the flat panel display of the present invention is not limited to the production of an organic EL display, and can be used for display devices such as PDPs, as well as correction of thin film wiring patterns and color filter colored portion defects. Is also applicable.

1 UV light (h ray)
2 Reticle 2a Glass plate 2b UV shading part (Cr masking part)
5 Glass substrate 6 Underlayer (HIL)
7 Negative / Positive resist 8 Exposed area (polymerization curing, depolymerization)
9 Pattern partition after PEB (thermosetting) 10 Discharge head (spin coating)
11 Elevating shaft for gap adjustment 12 Substrate in which partition pattern defect is detected 13 Resist (partition resin dispersion)
14 Substrate adsorption stage (spin chuck)
DESCRIPTION OF SYMBOLS 15 Substrate adsorption | suction stage rotating shaft 16 Micropore filter 17 Resist supply container 18 Resist supply piping 19 Photo aligner (UV) light source 20 UV split irradiation light (h line)
21 Substrate filled with resist 22 XYθ substrate stage (for exposure)
23 CCD Camera 24 Alignment Mark 25 Gantry 26 Guide Rail 27 Shower Head 28 XY Substrate Stage for Development 29 Alkaline Developer (TMAH)
30 Bulkhead defect correction part

Claims (8)

A method of repairing a defect of a partition wall of a flat panel display,
A first step of applying a solution in which the resin material of the partition wall is dispersed on the substrate on which the partition wall is formed;
A second step of forming the barrier rib by developing / cleaning the substrate after exposing the substrate to a barrier rib pattern;
A third step of thermosetting the partition by heating the substrate;
A fourth step of inspecting a partition pattern formed on the substrate and determining a defect of the partition from the inspection result;
A pattern forming method for a flat panel display, comprising: a fifth step of repairing the defective portion of the partition when it is determined that the partition has a defective portion. The fifth step includes a 51st step of re-applying a solution in which the partition wall resin material is dispersed over the entire surface of the substrate including the partition wall defect.
A 52nd step of aligning the substrate and the photomask and re-exposing into a partition pattern at the same position;
A 53rd step of forming partition walls by washing after re-developing the substrate;
The pattern formation method of Claim 1 comprised by the 54th process of thermosetting the said partition by reheating the said board | substrate. A plurality of partition walls are formed in one direction, and a liquid repellent material is used for the partition walls.
A step of filling a solution in which the resin material of the partition wall is dispersed only between each adjacent partition wall;
Steps from the 52nd step to the 54th step;
The pattern formation method of Claim 1 or 2 which repeats. 4. The pattern forming method according to claim 3, wherein the concentration of the solution in which the partition wall resin material applied to the entire surface of the substrate is dispersed is different from the concentration of the solution in which the partition wall resin material applied in the initial stage is dispersed. 5. The pattern forming method according to claim 3, wherein the development type of the concentration of the solution in which the partition wall resin material applied to the entire surface of the substrate is dispersed differs from the development type of the solution in which the partition wall resin material applied in the initial stage is dispersed. A step of exposing two upper and lower partition wall resin layers of different development types formed on a substrate through a selective exposure mask pattern; and a step of selectively local developing the upper and lower two partition wall resin layers by a spray method; The pattern formation method of Claim 5 which performs the process of thermosetting a partition resin layer. The pattern forming method according to any one of claims 1 to 6, wherein a top surface of the partition wall and an angle between the substrate and the partition wall are molded into an arbitrary shape by a laser. The pattern formation method according to claim 1, wherein UV-O 3 is selectively irradiated to a partition defect correction portion through a mask pattern.

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