JP2010257492A - Capacitive input device, display device with input function, and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a capacitive input device which can make the presence of patterns on a light-transmitting substrate and a crossing part of the patterns less noticeable while simplifying a manufacturing process, and to provide a display device provided with an input function, and an electronic apparatus. <P>SOLUTION: The input device 10 of a display device 100 with an input function serves as a capacitive touch panel, a first light-transmitting electrode pattern 11 and a second light-transmitting electrode pattern 12 made of an ITO film with film thickness of 20 nm and the refractive index of 1.91 are formed on one surface of a light-transmitting substrate 15. A multilayer film made of a niobium oxide film with the film thickness of 5 nm and the refractive index of 2.30 and a silicon oxide film with the film thickness of 55 nm and the refractive index of 1.45 is formed on a lower layer side of the first light-transmitting electrode pattern 11 and the second light-transmitting electrode pattern 12. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a capacitance type input device capable of detecting a contact position of a finger as a change in capacitance, a display device with an input function, and an electronic apparatus.

  In recent years, electronic devices such as mobile phones, car navigation systems, personal computers, ticket vending machines, and bank terminals have been equipped with a tablet-type input device on the surface of a liquid crystal device, etc., and an instruction image displayed in the image display area of the liquid crystal device In some cases, information corresponding to the instruction image can be input by touching a part where the instruction image is displayed with a finger or the like.

  Such an input device (touch panel) includes a resistance film type and a capacitance type, but the resistance film type input device has a structure in which a film is pressed and short-circuited by a two-layer structure of film and glass. However, it has the disadvantage that the operating temperature range is narrow and it is vulnerable to changes over time.

  On the other hand, the capacitive input device has an advantage that a light-transmitting conductive film is formed on a single substrate. In such a capacitance-type input device, for example, the electrodes are extended in directions intersecting each other, and when the finger or the like comes into contact, the capacitance between the electrodes is detected to detect the input position. There is a type (for example, Patent Document 1).

  In addition, as an electrostatic capacitance type input device, an alternating current of the same phase and the same potential is applied to both ends of the translucent conductive film to detect a weak current flowing when a capacitor is formed in contact with or close to a finger. Some types detect the input position.

JP 2007-122326 A

  In the capacitance type input device, for example, an image displayed on the liquid crystal device is transmitted through the input surface side of the input device for visual recognition. Nevertheless, if the reflectance is greatly different between the region where the translucent electrode or the like is formed and the region where the translucent electrode or the like is not formed, the presence of the translucent electrode becomes conspicuous, which is not preferable. . However, when the first translucent electrode and the second translucent electrode are respectively formed on the front surface and the back surface of the translucent substrate, the translucent film is interposed between the first translucent electrode and the second translucent electrode. Since a light-transmitting substrate is interposed, optical regions are formed in a region where the first light-transmitting electrode is formed, a region where the second light-transmitting electrode is formed, and a region where these light-transmitting electrodes are not formed. As a result, there is a problem that a large difference in reflectance occurs between the respective regions, and the presence of the translucent electrode becomes conspicuous.

  In addition, even when the first light-transmitting electrode and the second light-transmitting electrode are formed on the same surface side of the light-transmitting substrate, the glass substrate normally used for the light-transmitting substrate and the light-transmitting electrode are usually used. Since there is a large difference in refractive index between the ITO film (Indium Tin Oxide) used, reflection occurs between the area where the translucent electrode is formed and the area where the translucent electrode is not formed. A difference occurs in the rate, and the presence of the translucent electrode becomes conspicuous, which is not preferable.

  In view of the above problems, an object of the present invention is to provide a capacitance-type input device and an input that can make the presence of a light-transmitting electrode on a light-transmitting substrate inconspicuous while simplifying a manufacturing process. It is to provide a display device with a function and an electronic device.

  In order to solve the above-described problems, in the capacitive input device of the present invention, a translucent substrate and a plurality of translucent thin films formed on one surface of the translucent substrate and having different refractive indexes. A multilayer film in which one of the plurality of translucent thin films is a niobium oxide film, a plurality of first translucent electrodes extending in a first direction, and the first A plurality of second translucent electrodes extending in a second direction intersecting the direction, wherein the first and second translucent electrodes are the multilayer of the input region of the translucent substrate. An antireflection film is formed in the same layer on the film, and the first and second translucent electrodes and the multilayer film use an optical interference.

  In the capacitance-type input device according to the present invention, the first translucent electrode and the second translucent electrode are formed on the same surface of the translucent substrate. Since the translucent substrate is not interposed between the second translucent electrode and the second translucent electrode, if the antireflection technique is used, the region where the first translucent electrode is formed, the second translucent electrode It is easy to make the translucent electrode inconspicuous by reducing the difference in reflectance between the formed region and the region where the translucent electrode is not formed, and the manufacturing process can be simplified. . Further, in the present invention, as an antireflection technique, a niobium oxide film is included between the first translucent electrode and the translucent substrate and between the second translucent electrode and the translucent substrate. , Forming a multi-layer film of translucent thin films with different refractive indexes, and the reflectance in the region where the translucent electrode is formed and the region where the translucent electrode is not formed by the light of opposite phase Since the difference is compressed, the translucent electrode can be made inconspicuous. That is, when light is transmitted through an interface having a different refractive index, reflection occurs at the interface between the media. Therefore, when a light-transmitting electrode is formed on the light-transmitting substrate, the light is input to the light-transmitting electrode. Since there is an interface of the medium layer / translucent electrode on the surface side and an interface of the translucent electrode / translucent substrate, the region where the translucent electrode is formed and the translucent electrode are formed. Although there is a difference in reflectivity from the non-applied area and the presence of the translucent electrode can be seen, a multilayer film is used to reverse the phases of the light reflected at each interface and cancel each other. For example, since the difference in reflectance between the region where the translucent electrode is formed and the region where the translucent electrode is not formed can be eliminated, the presence of the translucent electrode can be made inconspicuous. Here, in the present invention, since the niobium oxide film having a high refractive index is used as the multilayer film, the transparent electrode is made inconspicuous even if a material having a high refractive index such as an ITO film is used for the transparent electrode. In addition, a thick ITO film or the like can be used for the translucent electrode, so that the resistance of the translucent electrode can be reduced.

  In the present invention, the first translucent electrode and the second translucent electrode are formed of the same material on the multilayer film having the same configuration, and the first translucent electrode and the second translucent electrode are formed. In the intersection with the translucent electrode, one electrode of the first translucent electrode and the second translucent electrode is connected to each other, while the other electrode is disconnected from each other, A translucent interlayer insulating film is formed at least on the upper layer side of the one electrode at the intersecting portion, and the other electrode interrupted at the intersecting portion is electrically connected to the upper layer of the interlayer insulating film. It is preferable that a translucent relay electrode to be connected is formed. If comprised in this way, since the 1st translucent electrode and the 2nd translucent electrode are the same structures, the 1st translucent electrode and the 2nd translucent electrode are formed in the same process. Therefore, the manufacturing process can be simplified. Further, when the first light-transmitting electrode and the second light-transmitting electrode are formed between different layers and crossed, the film configuration of the intersecting portion is the first light-transmitting electrode and the second light-transmitting electrode. When the image displayed on the liquid crystal device or the like is viewed from the input surface side of the input device, the region where the translucent electrode is formed and the translucent electrode are not formed. Even if the translucent electrode is formed so that the difference in reflectance from the region is small and the translucent electrode is not conspicuous, the crossing portion will be conspicuous. In FIG. 2, the electrodes are disconnected, and the disconnected electrodes are electrically connected to each other by a translucent relay electrode formed in an upper layer of the translucent interlayer insulating film. For this reason, the area occupied by the intersection is small. In addition, since the intersecting portion has a structure in which translucent thin films are laminated, the presence of the intersecting portion can be made inconspicuous. Therefore, according to the present invention, when the image generation device is arranged on the back side of the input device, it is possible to display a high-quality image because the presence of the intersection is not noticeable when viewed from the input surface side of the input device. Can do.

  In the present invention, it is preferable that the multilayer film is formed in the entire region including a region where the first light transmitting electrode and the second light transmitting electrode are not formed in the input region. If comprised in this way, since the pattern formation formation of the 1st translucent electrode and the 2nd translucent electrode can be performed easily and efficiently, the simplification of a manufacturing process can be achieved.

In the present invention, the relay electrode is preferably a translucent film.
In the present invention, it is preferable that the relay electrode has a narrow shape that is narrower than a width of the other electrode of the first light transmitting electrode and the second light transmitting electrode.

  In the present invention, the translucent substrate is a glass substrate, the first translucent electrode and the second translucent electrode are made of an ITO film, and the multilayer film is formed on the translucent substrate. A structure comprising a niobium oxide film formed on the silicon oxide film and a silicon oxide film stacked on the niobium oxide film can be employed.

  In this case, the niobium oxide film has a thickness of 4 nm to 6 nm and a refractive index of 2.22 to 2.37, and the silicon oxide film has a thickness of 52 nm to 60 nm, or 70 nm to 78 nm, and The refractive index is 1.425 to 1.49, and the ITO film preferably has a film thickness of 17 nm to 23 nm and a refractive index of 1.87 to 1.945. If comprised in this way, since the film thickness of the ITO film | membrane which comprises the 1st translucent electrode and the 2nd translucent electrode is thick, the resistance of a translucent electrode can be reduced.

  In the present invention, the surface on the side where the first light transmitting electrode and the second light transmitting electrode are formed in the light transmitting substrate is covered with at least a light transmitting resin layer. Such a translucent resin layer is constituted by an interlayer insulating film or an adhesive layer. If comprised in this way, even if the presence of a translucent electrode is somewhat conspicuous in the state before providing the translucent resin layer, after the translucent resin layer is provided, the presence of the translucent electrode becomes inconspicuous.

  In the case of configuring a display device with an input function using a capacitive input device to which the present invention is applied, an image generating device is placed on the opposite side of the input surface of the capacitive input device.

  The display device with an input function to which the present invention is applied can be used for electronic devices such as a mobile phone, an electronic notebook, and a terminal device such as a POS terminal.

(A), (b) is explanatory drawing which shows typically the structure of the display apparatus with an input function to which this invention is applied, respectively, and explanatory drawing which shows typically the planar structure of this display apparatus with an input function. Explanatory drawing which shows the planar structure of the 1st translucent electrode pattern formed in the input device which concerns on Embodiment 1 of this invention, and a 2nd translucent electrode pattern. (A), (b), (c) is a cross section schematically showing a state when the input device according to Embodiment 1 of the present invention is cut at a position corresponding to the line A1-A1 ′ of FIG. The figure, sectional drawing which shows the connection structure of a translucent electrode pattern and metal wiring, and explanatory drawing of the reflection preventing technique using optical interference. (A), (b) is a graph which respectively shows the relationship between the film thickness and refractive index of the niobium oxide film in the input device to which this invention is applied, and the reflectance difference by the presence or absence of an ITO film (translucent electrode pattern). . (A), (b) is a graph which respectively shows the relationship between the film thickness and refractive index of a silicon oxide film, and the reflectance difference by the presence or absence of an ITO film (translucent electrode pattern) in the input device to which the present invention is applied. . (A), (b) is a graph which respectively shows the relationship between the film thickness and refractive index of the ITO film | membrane in the input device to which this invention is applied, and the reflectance difference by the presence or absence of an ITO film | membrane (translucent electrode pattern). Process sectional drawing which shows the manufacturing method of the input device which concerns on Embodiment 1 of this invention. Explanatory drawing which shows the planar structure of the 1st translucent electrode pattern and 2nd translucent electrode pattern which were formed in the input device which concerns on Embodiment 2 of this invention. (A), (b) is sectional drawing which shows typically a mode when the input device which concerns on Embodiment 2 of this invention is cut | disconnected in the position corresponding to the A2-A2 'line of FIG. Sectional drawing which shows the connection structure of a photoelectrode pattern and metal wiring. Process sectional drawing which shows the manufacturing method of the input device which concerns on Embodiment 2 of this invention. Explanatory drawing of the electronic device using the display apparatus with an input function which concerns on this invention.

  Embodiments of the present invention will be described with reference to the drawings. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing.

[Embodiment 1]
(overall structure)
1 (a) and 1 (b) are explanatory diagrams schematically showing the configuration of a display device with an input function to which the present invention is applied, and schematically showing the planar configuration of the display device with an input function. It is explanatory drawing shown. In FIG. 1B, the first translucent electrode pattern (first translucent electrode) and the second translucent electrode pattern (second translucent electrode) are simplified by solid lines. The numbers are also reduced.

  In FIG. 1A, the display device 100 with an input function according to the present embodiment is generally a liquid crystal device 50 as an image generating device and a panel-like shape arranged on the surface on the display light emitting side in this image generating device. Input device 10 (touch panel). The liquid crystal device 50 includes a transmissive, reflective, or transflective active matrix liquid crystal panel 50a. In the case of a transmissive or transflective liquid crystal panel, the side opposite to the display light exit side is provided. A backlight device (not shown) is arranged. In the liquid crystal device 50, a phase difference plate and a polarizing plate (not shown) are arranged so as to overlap the liquid crystal panel 50a. The liquid crystal panel 50 a includes an element substrate 51, a counter substrate 52 disposed to face the element substrate 51, and a liquid crystal layer held between the counter substrate 52 and the element substrate 51. , A flexible substrate 53 is connected to a region protruding from the edge of the counter substrate 52. A driving IC may be COG mounted on the element substrate 51. In any case, the liquid crystal device 50 can display a moving image or a still image, and displays an instruction image corresponding to the input information when performing input to the input device 10. Therefore, the user can input information by touching the instruction image displayed on the input device 10 with a finger.

  The input device 10 is a capacitive touch panel, and a translucent cover that is bonded to the translucent substrate 15 via an adhesive layer (translucent resin layer) described later. A substrate 40 and a flexible substrate 19 connected to an end portion of the translucent substrate 15 are provided. A driving circuit (not shown) for detecting an input position in the input device 10 is connected to the flexible substrate 19. In the input device 10, an input surface 10 b is configured by the upper surface of the cover substrate 40, and a substantially central region of the cover substrate 40 is an input region 10 a where input with a fingertip is performed.

  As shown in FIG. 1B, a plurality of rows extending in the first direction indicated by the arrow X are formed in the region corresponding to the input region 10 a among the surfaces on the input surface 10 b side of the translucent substrate 15. A first translucent electrode pattern 11 and a plurality of rows of second translucent electrode patterns 12 extending in a second direction intersecting the first direction indicated by the arrow Y are formed.

  In the input device 10 having such a configuration, when voltage is sequentially applied to the plurality of first light transmissive electrode patterns 11 and the plurality of second light transmissive electrode patterns 12 to apply electric charges, When a finger, which is a conductor, touches any part, there is a capacitance between the first translucent electrode pattern 11 and the second translucent electrode pattern 12 and the finger, and as a result, the capacitance Therefore, it is possible to detect which part is touched by the finger.

(Detailed configuration of the input device 10)
FIG. 2 is an explanatory diagram showing a planar configuration of the first light transmissive electrode pattern and the second light transmissive electrode pattern formed in the input device according to the first embodiment of the present invention. 3 (a), 3 (b), and 3 (c) each show a state when the input device according to Embodiment 1 of the present invention is cut at a position corresponding to the line A1-A1 ′ of FIG. FIG. 2 is a cross-sectional view schematically showing a cross-sectional view, a cross-sectional view showing a connection structure between a translucent electrode pattern and a metal wiring, and an explanatory view of an antireflection technique using optical interference. In FIG. 2, a part of the first translucent electrode pattern and the second translucent electrode pattern are extracted and shown.

  As shown in FIG. 1B, FIG. 2 and FIG. 3A, in the input device 10 of this embodiment, the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are translucent. The same layer is formed on the same surface of the conductive substrate 15. Further, in the input region 10a, the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are formed on the same surface of the translucent substrate 15 by the same layer. There are a plurality of intersecting portions 18 between the translucent electrode pattern 11 and the second translucent electrode pattern 12.

  Therefore, in this embodiment, in any of the plurality of intersecting portions 18, one of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 is connected to the intersecting portion 18. On the other hand, the other electrode pattern is interrupted. In this embodiment, the first translucent electrode pattern 11 is connected to any of the plurality of intersecting portions 18, while the second translucent electrode pattern 12 is interrupted.

  Further, a translucent interlayer insulating film 4a is formed on the upper side of the first translucent electrode pattern 11 in the intersecting portion 18, and the upper portion of the interlayer insulating film 4a is crossed at the intersecting portion 18. A translucent relay electrode 5a that electrically connects the discontinuous second translucent electrode patterns 12 is formed. For this reason, the 2nd translucent electrode pattern 12 is electrically connected by the 2nd direction.

  Here, each of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 has a rhombic large-area pad portion (large area portion) 11a, 12a in a region sandwiched by the intersecting portions 18. In the first translucent electrode pattern 11, the connecting portion 11c located at the intersecting portion 18 has a narrow shape that is narrower than the pad portion (large area portion) 11a. The relay electrode 5a is also formed in a strip shape having a narrow width narrower than the pad portions (large area portions) 11a and 12a.

  Furthermore, the pressure-sensitive adhesive layer 30 (light-transmitting property) is formed on the input region 10a on the surface of the light-transmitting substrate 15 where the first light-transmitting electrode pattern 11 and the second light-transmitting electrode pattern 12 are formed. A translucent cover substrate 40 is affixed by the resin layer.

  As shown in FIG. 1A, FIG. 1B, and FIG. 3B, in the translucent substrate 15, the first translucent electrode pattern 11 and the second translucent substrate are formed in the outer region of the input region 10a. A plurality of metal wirings 9a electrically connected to each of the translucent electrode patterns 12 are formed, and the end portions of these metal wirings 9a constitute terminals 19a for connecting the flexible substrate 19. Yes.

  In the input device 10 configured as described above, in this embodiment, a region where the first light-transmissive electrode pattern 11 and the second light-transmissive electrode pattern 12 are formed, and the first light-transmissive electrode pattern 11. Due to the difference in reflectance from the region where the second light-transmissive electrode pattern 12 is not formed, the presence of the first light-transmissive electrode pattern 11 and the second light-transmissive electrode pattern 12 is visible. End up deteriorating the appearance. In the present embodiment, the first translucent electrode pattern 11 is based on an antireflection technique using optical interference, which will be described below with reference to FIG. The material and thickness of the second translucent electrode pattern 12 are set.

As shown in Fig. 3 (c), the antireflection technology using optical interference reverses the phase of the surface reflected light and the interface reflected light when the reflected light is reflected at the surface of the thin film and at the interface between the substrate and the thin film. It is a technology that reduces reflected light by canceling them. That is, in FIG. 3C, the refractive index (n ₀ ) of the air layer, the refractive index (n ₁ ) and the film thickness (d ₁ ) of the thin film, and the refractive index (n ₂ ) of the substrate are (N ₁ ) ² = n ₀ × n ₂
n ₁ × d ₁ = λ / 4

  When satisfying, the reflectance at the wavelength λ (nm) becomes 0%. Here, since the antireflection effect has a wavelength dependency and a film dependency of a thin film, when an optical simulation is performed, the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are also obtained. In addition, if the above-described antireflection technology using optical interference is used, the region where the first light-transmitting electrode pattern 11 and the second light-transmitting electrode pattern 12 are formed, and the first light-transmitting electrode pattern. The difference in reflectance from the region where the conductive electrode pattern 11 and the second transparent electrode pattern 12 are not formed is eliminated, and the first transparent electrode pattern 11 and the second transparent electrode pattern 12 The conclusion was reached that the existence could be made invisible.

  Therefore, in this embodiment, first, the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are formed of the ITO film 3a, and the first translucent electrode pattern 11 and the translucent substrate 15 are formed. 3 and the second translucent electrode pattern 12 and the translucent substrate 15 together with the first translucent electrode pattern 11 and the second translucent electrode pattern 12, FIG. A multilayer film 20 for realizing the antireflection structure described with reference to c) is formed.

In this embodiment, as the multilayer film 20, a niobium oxide film 1a formed on the surface of the translucent substrate 15 and a silicon oxide film 2a formed on the niobium oxide film 1a are used. Is formed as a solid pattern on the lower layer side of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 as a base film without patterning, and the first translucent electrode pattern is formed in the input region. 11 and the 2nd translucent electrode pattern 12 are formed in all the area | regions including the area | region in which it is not formed. Although the niobium oxide film 1a is expressed as Nb ₂ O ₅ , the ratio of niobium atoms to oxygen atoms may shift depending on the film forming conditions, and the refractive index also shifts due to such a shift. Further, although the silicon oxide film 2a is expressed as SiO ₂ , the ratio of silicon atoms to oxygen atoms may shift depending on the film forming conditions, and the refractive index also shifts due to such a shift. In addition, the ITO film 3a may shift the ratio of indium atoms, tin atoms, and oxygen atoms depending on the film formation conditions, and the refractive index also shifts due to such a shift.

In realizing an antireflection structure using such a multilayer film 20, in this embodiment, the refractive index of the translucent substrate 15, the first translucent electrode pattern 11, and the second translucent electrode pattern 12 are changed. The thicknesses of the niobium oxide film 1a and the silicon oxide film 2a are optimized in consideration of the thickness and refractive index of the ITO film 3a to be formed. Further, since the refractive index of the niobium oxide film 1a, the silicon oxide film 2a, and the ITO film 3a differs depending on the film forming conditions, in this embodiment, each layer is formed based on the examination results shown in FIGS. Refractive index and film thickness are the following conditions: Adhesive layer 30: Refractive index = 1.48, Thickness = 25,000 nm
ITO film 3a: refractive index = 1.91, thickness = 20 nm
Silicon oxide film 2a: refractive index = 1.45, thickness = 55 nm or 75 nm
Niobium oxide film 1a: refractive index = 2.30, thickness = 5 nm
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
It is set to.

(Relationship between the configuration of the niobium oxide film 1a and the difference in reflectance with and without the ITO film 3a)
With reference to FIG. 4, the relationship between the refractive index and film thickness of the niobium oxide film 1a in the input device to which the present invention is applied and the difference in reflectance depending on the presence or absence of the ITO film 3a will be described. 4 (a) and 4 (b) respectively show the difference in reflectance between the thickness and refractive index of the niobium oxide film 1a and the presence or absence of the ITO film 3a (translucent electrode pattern) in the input device to which the present invention is applied. It is a graph which shows the relationship.

FIG. 4A shows the following conditions among the various examination results: Adhesive layer 30: Refractive index = 1.48, Thickness = 25,000 nm
ITO film 3a: refractive index = 1.91, thickness = 20 nm
Silicon oxide film 2a: refractive index = 1.45, thickness = 55 nm
Niobium oxide film 1a: Refractive index = 2.30
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
The change in reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the thickness of the niobium oxide film 1a is changed is shown.

FIG. 4B shows the following conditions: Adhesive layer 30: Refractive index = 1.48, Thickness = 225000 nm
ITO film 3a: refractive index = 1.91, thickness = 20 nm
Silicon oxide film 2a: refractive index = 1.45, thickness = 55 nm
Niobium oxide film 1a: thickness = 5 nm
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
Is shown, and changes in the reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the refractive index of the niobium oxide film 1a is changed are shown.

  As shown in FIGS. 4A and 4B, when the thickness of the niobium oxide film 1a is set to 5 nm and the refractive index is set to 2.30, depending on the presence or absence of the ITO film 3a (translucent electrode pattern). The difference in reflectance can be minimized, and the presence of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 can be made inconspicuous.

  The niobium oxide film 1a has a minimum difference in reflectance depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the film thickness is set to 5 nm and the refractive index is set to 2.30. As shown in FIG. 4B, if the film thickness (4 nm to 6 nm) and the refractive index (2.22 to 2.37) are set in a range where the difference in reflectance is 0.1% or less, the first The effect of making the presence of the translucent electrode pattern 11 and the second translucent electrode pattern 12 inconspicuous is obtained.

(Relation between the structure of the silicon oxide film 2a and the difference in reflectance with and without the ITO film 3a)
With reference to FIG. 5, the relationship between the refractive index and film thickness of the silicon oxide film 2a in the input device to which the present invention is applied and the difference in reflectance depending on the presence or absence of the ITO film 3a will be described. 5 (a) and 5 (b) respectively show the difference in reflectance between the thickness and refractive index of the silicon oxide film 2a and the presence or absence of the ITO film 3a (translucent electrode pattern) in the input device to which the present invention is applied. It is a graph which shows the relationship.

FIG. 5 (a) shows the following conditions among the various examination results: Adhesive layer 30: Refractive index = 1.48, Thickness = 25,000 nm
ITO film 3a: refractive index = 1.91, thickness = 20 nm
Silicon oxide film 2a: Refractive index = 1.45
Niobium oxide film 1a: refractive index = 2.30, thickness = 5 nm
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
The change in reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the film thickness of the silicon oxide film 2a is changed is shown.

FIG. 5B shows the following conditions: Adhesive layer 30: Refractive index = 1.48, Thickness = 225000 nm
ITO film 3a: refractive index = 1.91, thickness = 20 nm
Silicon oxide film 2a: thickness = 55 nm
Niobium oxide film 1a: refractive index = 2.30, thickness = 5 nm
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
The change of the reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the refractive index of the silicon oxide film 2a is changed while fixing is shown.

  As shown in FIGS. 5A and 5B, when the thickness of the silicon oxide film 2a is 55 nm or 75 nm and the refractive index is set to 1.45, the ITO film 3a (translucent electrode pattern) is formed. The difference in reflectance due to the presence or absence can be minimized, and the presence of the first light transmissive electrode pattern 11 and the second light transmissive electrode pattern 12 can be made inconspicuous.

  In the silicon oxide film 2a, when the film thickness is set to 55 nm or 75 nm and the refractive index is set to 1.45, the difference in reflectance due to the presence or absence of the ITO film 3a (translucent electrode pattern) is minimized. ), As shown in FIG. 5B, the film thickness (52 nm to 60 nm or 70 nm to 78 nm) and the refractive index (1.425 to 1.49) are set so that the difference in reflectance is 0.05% or less. If it does so, the effect which makes the presence of the 1st translucent electrode pattern 11 and the 2nd translucent electrode pattern 12 inconspicuous will be acquired.

(Relationship between the configuration of the ITO film 3a and the difference in reflectance with and without the ITO film 3a)
With reference to FIG. 6, the relationship between the refractive index and film thickness of the ITO film 3a in the input device to which the present invention is applied and the difference in reflectance depending on the presence or absence of the ITO film 3a will be described. 6 (a) and 6 (b) respectively show the film thickness and refractive index of the ITO film 3a in the input device to which the present invention is applied, and the difference in reflectance depending on the presence or absence of the ITO film 3a (translucent electrode pattern). It is a graph which shows the relationship.

FIG. 6A shows the following conditions among the various examination results: Adhesive layer 30: Refractive index = 1.48, Thickness = 25,000 nm
ITO film 3a: Refractive index = 1.91
Silicon oxide film 2a: refractive index = 1.45, thickness = 55 nm
Niobium oxide film 1a: refractive index = 2.30, thickness = 5 nm
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
The change in reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the film thickness of the ITO film 3a is changed is shown.

FIG. 6B shows the following conditions: Adhesive layer 30: Refractive index = 1.48, Thickness = 225000 nm
ITO film 3a: thickness = 20 nm
Silicon oxide film 2a: thickness = 55 nm
Niobium oxide film 1a: refractive index = 2.30, thickness = 5 nm
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
Is shown, and changes in the reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the refractive index of the ITO film 3a is changed are shown.

  As shown in FIGS. 6A and 6B, when the thickness of the ITO film 3a is set to 20 nm and the refractive index is set to 1.91, reflection due to the presence or absence of the ITO film 3a (translucent electrode pattern). The difference in rate can be minimized, and the presence of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 can be made inconspicuous.

  The ITO film 3a has a minimum difference in reflectance depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when the film thickness is set to 20 nm and the refractive index is set to 1.91. As shown in FIG. 6B, if the film thickness (17 nm to 23 nm) and the refractive index (1.87 to 1.945) are set so that the difference in reflectance is 0.1% or less, An effect of making the presence of the photoelectrode pattern 11 and the second translucent electrode pattern 12 inconspicuous is obtained.

(Manufacturing method of the input device 10)
FIG. 7A to FIG. 7E are process cross-sectional views illustrating the method for manufacturing the input device according to the first embodiment of the present invention. 7 (a) to 7 (e) collectively show the translucent electrode pattern, the intersecting portion, and the metal wiring, and the left side shows a portion corresponding to FIG. 3 (a), and the right side. FIG. 3 shows a portion corresponding to FIG.

  In order to manufacture the input device 10 of the present embodiment, first, as shown in FIG. 7A, the niobium oxide film 1a having a film thickness of 5 nm is formed on one whole surface of the translucent substrate 15 (glass substrate). After forming the silicon oxide film 2 having a thickness of 55 nm and the polycrystalline ITO film 3 having a thickness of 20 nm, a metal film 9 is formed. In this way, the ITO film 3 and the metal film 9 are laminated on the multilayer film 20 (underlying film) of the niobium oxide film 1a and the silicon oxide film 2.

  Next, the metal film is etched in a state where an etching mask made of a photosensitive resin or the like is formed on the surface of the metal film, and after forming the metal wiring 9a as shown in FIG. 7B, the etching mask is removed. To do.

  Next, the ITO film 3 is etched in a state where an etching mask made of a photosensitive resin or the like is formed on the upper side of the metal wiring 9a and the ITO film 3 and the like, as shown in FIG. After the photoelectrode pattern 11 and the second translucent electrode pattern 12 are simultaneously formed by patterning, the etching mask is removed. At the intersection 18 between the first translucent electrode pattern 11 and the second translucent electrode pattern 12 formed in this way, the first translucent electrode pattern 11 has a pad portion (large area portion). While 11a is connected via the connection part 11c, the 2nd translucent electrode pattern 12 is interrupted. Also in this embodiment, when the first light transmissive electrode pattern 11 and the second light transmissive electrode pattern 12 are formed by patterning, the first light transmissive electrode pattern 11 and the second light transmissive electrode pattern 11 and the second light transmissive electrode pattern 12 are not patterned. Since the patterning formation of the translucent electrode pattern 12 can be performed easily and efficiently, the manufacturing process can be simplified.

  Next, after acrylic resin is applied to the surface side of the first light-transmissive electrode pattern 11 and the second light-transmissive electrode pattern 12, exposure and development are performed, and as shown in FIG. An interlayer insulating film 4 a is formed so as to cover the connection portion 11 c of the translucent electrode pattern 11.

  Next, after an amorphous ITO film is formed on the upper side of the interlayer insulating film 4a, the ITO film is etched with an etching mask made of a photosensitive resin or the like formed on the surface of the ITO film, and FIG. As shown, the relay electrode 5a is formed on the interlayer insulating film 4a so as to connect the discontinuous portion of the second light transmissive electrode pattern 12. Thereafter, baking is performed under conditions where the temperature is 200 ° C. or higher, for example, the temperature is 220 ° C. and the time is 20 minutes to 30 minutes, and the ITO film constituting the relay electrode 5a is made into a polycrystalline ITO film. If it is an amorphous ITO film, it can be etched with oxalic acid or the like, and if it is oxalic acid, the polycrystalline ITO film is not etched. Therefore, when the relay electrode 5a is formed by patterning, the first translucent electrode pattern 11 and the second translucent electrode pattern 11 are formed. The ITO film 3a constituting the translucent electrode pattern 12 is not damaged. Moreover, since the ITO film which comprises the relay electrode 5a is made into a polycrystalline ITO film | membrane by baking, the electrical resistance of the relay electrode 5a can also be reduced.

(Main effects of this form)
As described above, in this embodiment, the lower layers of the first and second translucent electrode patterns 11 and 12 are formed so that the translucent thin films having different refractive indexes overlap each other. Since the multilayer film 20 (niobium oxide film 1a, silicon oxide film 2a) formed is formed, a region where the first light-transmissive electrode pattern 11 and the second light-transmissive electrode pattern 12 are formed, It is possible to eliminate the difference in reflectance from the region where the first light transmissive electrode pattern 11 and the second light transmissive electrode pattern 12 are not formed. That is, in this embodiment, the light-transmitting substrate 15 is a glass substrate, and the first light-transmitting electrode pattern 11 and the second light-transmitting electrode pattern 12 made of the ITO film 3a having a thickness of 20 nm are used. A multilayer film 20 composed of a niobium oxide film 1a having a thickness of 5 nm and a silicon oxide film 2a having a thickness of 55 nm is laminated as a base film, and the phases of the light reflected at each interface are reversed to cancel each other. . For this reason, the area | region in which the 1st translucent electrode pattern 11 and the 2nd translucent electrode pattern 12 are formed, and the 1st translucent electrode pattern 11 and the 2nd translucent electrode pattern 12 are Since the difference in reflectance from the region where the film is not formed can be eliminated, it is possible to prevent the presence of the first light-transmissive electrode pattern 11 and the second light-transmissive electrode pattern 12 from being seen.

  Conversely, in the present invention, the niobium oxide film 1a having a film thickness of 5 nm and the silicon oxide film having a film thickness of 55 nm with respect to the first light-transmitting electrode pattern 11 and the second light-transmitting electrode pattern 12. Since the multilayer film 20 made of 2a is laminated as a base film, a thick ITO film 3a of 20 nm can be used as the first translucent electrode pattern 11 and the second translucent electrode pattern 12, Even when the electrical resistance of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 is reduced, the presence of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 is visible. Can be prevented.

  In particular, in this embodiment, the first translucent electrode pattern 11 and the second translucent electrode pattern 12 have large-area pad portions (large-area portions) 11a and 12a, so that the shape is easily noticeable. When the present invention is applied, even when the first light-transmitting electrode pattern 11 and the second light-transmitting electrode pattern 12 having such a shape are formed, the conspicuousness can be reliably prevented.

  In the present embodiment, since the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are formed on the same surface of the translucent substrate 15, the surface of the translucent substrate 15 and A manufacturing process can be simplified compared with the case where the 1st translucent electrode pattern 11 and the 2nd translucent electrode pattern 12 are formed in each of the back surface. In addition, since the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are formed of the same layer, the first translucent electrode pattern 11 and the second translucent electrode pattern. The manufacturing process can be simplified as compared with the case where 12 is formed of different layers.

  Here, when the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are formed of the same layer on the same surface side of the translucent plate 15, the first translucent electrode pattern 11 and the second translucent electrode pattern 11 are formed. It is necessary to cross the two translucent electrode patterns 12, and the film configuration of the intersecting portion 18 is different from the first translucent electrode pattern 11 and the second translucent electrode pattern 12. For this reason, even if the presence of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 is inconspicuous, the presence of the intersecting portion 18 becomes conspicuous. However, in the present embodiment, the discontinuous portion of the second translucent electrode pattern 12 employs a configuration in which it is electrically connected by the relay electrode 5a formed in the upper layer of the interlayer insulating film 4a, and the first In the translucent electrode pattern 11, the connecting portion 11c located at the intersecting portion 18 and the relay electrode 5a are made narrow, so that the area occupied by the intersecting portion 18 is small. Further, since the relay electrode 5a is made of an ITO film having a film thickness of 10 nm to 15 nm, and the interlayer insulating film 4a is made of acrylic resin, the presence of the intersecting portion 18 is also unnoticeable. Therefore, according to the present invention, the presence of the intersection 18 is not noticeable when viewed from the input surface 10b side of the input device 10. Therefore, an image displayed on the liquid crystal device 50 or the like is displayed from the input surface 10b side of the input device 10. When viewed, the image quality is high.

[Embodiment 2]
(overall structure)
FIG. 8 is an explanatory diagram showing a planar configuration of the first and second translucent electrode patterns formed in the input device according to the second embodiment of the present invention. 9 (a) and 9 (b) are cross-sectional views schematically showing a state when the input device according to the second embodiment of the present invention is cut at a position corresponding to the line A2-A2 ′ of FIG. It is sectional drawing which shows the connection structure of a figure and a translucent electrode pattern and metal wiring. Since the basic configuration of the present embodiment is the same as that of the first embodiment, common portions are denoted by the same reference numerals, and description thereof is omitted.

  In FIG. 8 and FIG. 9A, the input device 10 of this embodiment is also a capacitive touch panel as in the first embodiment, and the input area 10a of the input surface 10b of the translucent substrate 15 is placed in the input region 10a. Are a plurality of rows of first translucent electrode patterns 11 extending in a first direction and a plurality of rows of second translucent electrode patterns extending in a second direction intersecting the first direction. 12 are formed. Both the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are formed of the ITO film 3a on the same surface of the translucent substrate 15, and a multilayer film is formed on the lower layer side thereof. 20 (niobium oxide film 1a, silicon oxide film 2a) is formed. In addition, at the intersection 18 between the first translucent electrode pattern 11 and the second translucent electrode pattern 12, the first translucent electrode pattern 11 is connected to the second translucent electrode. The pattern 12 is interrupted. Furthermore, the pressure-sensitive adhesive layer 30 (light-transmitting property) is formed on the input region 10a on the surface of the light-transmitting substrate 15 where the first light-transmitting electrode pattern 11 and the second light-transmitting electrode pattern 12 are formed. A translucent cover substrate 40 is affixed by the resin layer.

  Here, on the upper layer side of the first translucent electrode pattern 11 and the second translucent electrode pattern 12, a translucent interlayer insulating film 4b (translucent resin layer) is formed on the entire input region 10a. In the upper layer of the interlayer insulating film 4b, the second translucent electrode patterns 12 that are interrupted at the intersection 18 are electrically connected to each other through the contact hole 4c of the interlayer insulating film 4b. An optical relay electrode 5a is formed. For this reason, the 2nd translucent electrode pattern 12 is electrically connected by the 2nd direction.

Also in this embodiment, as in Embodiment 1, the refractive index and film thickness of each layer are as follows: Adhesive layer 30: Refractive index = 1.48, Thickness = 25,000 nm
Interlayer insulating film 4b: refractive index = 1.52, thickness = 1500 nm
ITO film 3a: refractive index = 1.91, thickness = 20 nm
Silicon oxide film 2a: refractive index = 1.45, thickness = 55 nm
Niobium oxide film 1a: refractive index = 2.30, thickness = 5 nm
Translucent substrate 15 (glass): refractive index = 1.52, thickness = 500000 nm
Is set to the conditions shown in

  4A and 4B of the first embodiment are the thickness and refractive index of the niobium oxide film, and FIGS. 5A and 5B are the thickness and refractive index of the silicon oxide film. 6 (a) and 6 (b) show the case where the thickness and refractive index of the ITO film are changed, and the case where the adhesive layer is provided without the interlayer insulating film 4b (thickness = 0 nm). 4 shows changes in reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern). In the actual embodiment 2, the refractive index (= 1.52) of the interlayer insulating film 4b is close to the refractive index (= 1.48) of the adhesive layer, and the film thickness (= 1500 nm) of the interlayer insulating film 4b is adhesive. Since it is remarkably thinner than the film thickness (= 225000 nm) of the agent layer, the numerical results of the difference in reflectance depending on the presence or absence of the ITO film 3a (translucent electrode pattern) are substantially the same. 4A and 4B show the thickness and refractive index of the niobium oxide film, FIGS. 5A and 5B show the thickness and refractive index of the silicon oxide film, and FIG. 6A and 6B show the case where the thickness and refractive index of the ITO film are changed, and the adhesive layer (thickness = 1500 nm, refractive index = 1.52) is used as the adhesive layer ( This shows the change in the reflectance difference depending on the presence or absence of the ITO film 3a (translucent electrode pattern) when it has a thickness = 25,000 nm and a refractive index = 1.48.

  Each of the first translucent electrode pattern 11 and the second translucent electrode pattern 12 includes a rhombus-shaped pad portion in a region sandwiched between the intersecting portions 18, and the intersecting portion 18 in the first electrode pattern. The connecting portion 11c located in the shape of the narrow portion is narrower than the pad portion. The relay electrode 5a is also formed in a strip shape having a narrow width narrower than the pad portion.

  As shown in FIG. 9B, in the translucent substrate 15, the first translucent electrode pattern 11 and the second translucent electrode pattern 12 are electrically connected to the outer region of the input region 10 a. A plurality of metal wirings 9a to be connected are formed, and ends of these metal wirings 9a constitute terminals 19a for connecting a flexible substrate.

(Manufacturing method of the input device 10)
FIG. 10A to FIG. 10E are process cross-sectional views illustrating a method for manufacturing an input device according to Embodiment 2 of the present invention. 10 (a) to 10 (e) collectively show the translucent electrode pattern, the intersecting portion, and the metal wiring, and the left side shows a portion corresponding to FIG. 9 (a), and the right side. FIG. 9 shows a portion corresponding to FIG.

  In order to manufacture the input device 10 of this embodiment, first, as shown in FIG. 10A, a polycrystalline niobium oxide film having a film thickness of 5 nm is formed on one whole surface of a light-transmitting substrate 15 (glass substrate). After forming the film 1a, the silicon oxide film 2 having a thickness of 55 nm, and the polycrystalline ITO film 3 having a thickness of 20 nm, a metal film 9 is formed.

  Next, the metal film is etched in a state where an etching mask made of a photosensitive resin or the like is formed on the surface of the metal film 9, and the metal wiring 9a is formed by patterning as shown in FIG. Remove.

  Next, the ITO film 3 is etched in a state where an etching mask made of a photosensitive resin or the like is formed on the upper layer side of the metal wiring 9a or the like, and as shown in FIG. The ITO film 3a constituting the 11 and the second translucent electrode pattern 12 is formed by patterning. Next, the etching mask is removed.

  Next, after an acrylic resin is applied to the surface side of the first translucent electrode pattern 11 and the second translucent electrode pattern 12, exposure and development are performed, and as shown in FIG. An interlayer insulating film 4 b is formed so as to overlap the intersecting portion 18 of the translucent electrode pattern 11 and the second translucent electrode pattern 12. At that time, a contact hole 4c is simultaneously formed in the interlayer insulating film 4b.

  Next, after forming a polycrystalline ITO film on the upper side of the interlayer insulating film 4b, the ITO film is etched with an etching mask made of a photosensitive resin or the like formed on the surface of the ITO film to form the relay electrode 5a. To do. At that time, since the first light-transmissive electrode pattern 11 and the second light-transmissive electrode pattern 12 are covered with the interlayer insulating film 4b, the first light-transmissive electrode pattern 11 and the second light-transmissive electrode pattern 11 are covered. The conductive electrode pattern 12 is not damaged. Also, instead of the polycrystalline ITO film, an amorphous ITO film is formed, etched with oxalic acid with an etching mask made of photosensitive resin, etc., and annealed after pattern formation to form a polycrystalline ITO film. May be.

(Main effects of this form)
As described above, also in this embodiment, as in the first embodiment, a multilayer film (niobium oxide film 1a and silicon) is formed on the lower layer side of the first translucent electrode pattern 11 and the second translucent electrode pattern 12. Since the oxide film 2a) is formed, the difference in reflectance between the region where the translucent electrode pattern is formed and the region where the translucent electrode pattern is not formed can be eliminated. The same effects as those of the first embodiment are obtained, for example, the presence of the translucent electrode pattern 11 and the second translucent electrode pattern 12 is inconspicuous.

[Other embodiments]
In the above embodiment, the end of the metal wiring 9a is used as it is as the terminal 19a. However, an ITO layer may be formed simultaneously with the relay electrode 5a on the upper end of the metal wiring 9a to form the terminal 19a. In the second embodiment, the interlayer insulating film 4b is formed only in the input region 10a. However, the interlayer insulating film 4b may be formed on substantially the entire surface except the surface of the terminal 19a.

  In the above embodiment, as an example of the multilayer structure using thin film optical interference, the thickness of the silicon oxide film 2a has been described centering on the thickness = 55 nm. However, based on the result shown in FIG. It may be 75 nm.

  Further, the film thickness and refractive index of the niobium oxide film 1a, the silicon oxide film 2a, and the ITO film 3a are not limited to the region where the translucent electrode pattern is formed, even though the allowable range of about 10% is set. The difference in reflectance from the region where the photoelectrode pattern is not formed can be considerably compressed.

  In the above embodiment, the liquid crystal device 50 as the image generation device is used, but an organic electroluminescence device or a plasma display device may be used as the image generation device.

[Example of mounting on electronic devices]
Next, an electronic apparatus to which the display device with an input function 100 according to the above-described embodiment is applied will be described. FIG. 11A shows a configuration of a mobile personal computer including the display device 100 with an input function. The personal computer 2000 includes a display device 100 with an input function as a display unit and a main body 2010. The main body 2010 is provided with a power switch 2001 and a keyboard 2002. FIG. 11B shows a configuration of a mobile phone including the display device 100 with an input function. A cellular phone 3000 includes a plurality of operation buttons 3001, scroll buttons 3002, and the display device 100 with an input function as a display unit. By operating the scroll button 3002, the screen displayed on the display device 100 with an input function is scrolled. FIG. 11C shows a configuration of a portable information terminal (PDA: Personal Digital Assistants) to which the display device 100 with an input function is applied. The information portable terminal 4000 includes a plurality of operation buttons 4001, a power switch 4002, and the display device 100 with an input function as a display unit. When the power switch 4002 is operated, various kinds of information such as an address book and a schedule book are displayed on the display device 100 with an input function.

  Note that electronic devices to which the display device 100 with an input function is applied include those shown in FIG. 11, a digital still camera, a liquid crystal television, a car navigation device, a pager, an electronic notebook, a calculator, a word processor, a workstation, a videophone, Examples thereof include terminal devices such as POS terminals.

  DESCRIPTION OF SYMBOLS 1a ... Niobium oxide film, 2a ... Silicon oxide film, 3a ... ITO film, 4a, 4b ... Interlayer insulation film, 5a ... Relay electrode, 9a ... Metal wiring, 10 ... Input device, 11 ... 1st translucent electrode pattern , 12 ... 2nd translucent electrode pattern, 15 ... Translucent substrate, 18 ... Crossing part, 11a, 12a ... Pad part (large area part), 11c ... Connection part, 50 ... Liquid crystal device as an image generation apparatus , 100... Display device with input function as a display unit.

Claims (11)

A translucent substrate;
A multilayer film formed on one surface of the translucent substrate, including a plurality of translucent thin films having different refractive indexes, wherein one translucent thin film of the translucent thin films is a niobium oxide film When,
A plurality of first translucent electrodes extending in a first direction;
A plurality of second translucent electrodes extending in a second direction intersecting the first direction,
The first and second translucent electrodes are formed in the same layer on the multi-layer film in the input region of the translucent substrate, and are formed by the first and second translucent electrodes and the multi-layer film. A capacitive input device that constitutes an antireflection film using optical interference. At the intersection of the first translucent electrode and the second translucent electrode, one of the first translucent electrode and the second translucent electrode is connected to each other. While the other electrode is disconnected from each other,
A translucent interlayer insulating film is formed at least on the upper layer side of the one electrode at the intersecting portion, and the other electrode interrupted at the intersecting portion is electrically connected to the upper layer of the interlayer insulating film. The capacitive input device according to claim 1, wherein a translucent relay electrode to be connected is formed. The multilayer film is formed in the entire region including a region where the first light-transmissive electrode and the second light-transmissive electrode are not formed in the input region. Capacitive input device. The first and second translucent electrodes form a translucent electrode film having the same material and the same film thickness,
The antireflection film is formed so that reflected light at an interface formed by the translucent substrate, the multilayer film, and the translucent electrode film cancels each other and reduces reflection of light incident from the outside. The electrostatic capacity type input device according to any one of claims 1 to 3, wherein a refractive index and a film thickness of each film of the film and the translucent electrode film are set. The translucent substrate is a glass substrate;
The first translucent electrode and the second translucent electrode are made of an ITO film,
The multilayer film includes a niobium oxide film formed on the translucent substrate and a silicon oxide film stacked on the niobium oxide film. Capacitance type input device. The niobium oxide film has a thickness of 4 nm to 6 nm and a refractive index of 2.22 to 2.37.
The silicon oxide film has a thickness of 52 nm to 60 nm or 70 nm to 78 nm, and a refractive index of 1.425 to 1.49.
The capacitive input device according to claim 5, wherein the ITO film has a thickness of 17 nm to 23 nm and a refractive index of 1.87 to 1.945. The surface of the light-transmitting substrate on which the first light-transmitting electrode and the second light-transmitting electrode are formed is covered with at least a light-transmitting resin layer. 6. The capacitance-type input device according to any one of claims 6. The first translucent electrode and the second translucent electrode have a diamond-shaped pad portion in a region sandwiched between the intersecting portions, and are located at the intersecting portion in the first translucent electrode. The electrostatic connection according to claim 2, wherein the connection portion has a narrow shape that is narrower than the pad portion, and the relay electrode is also formed in a narrow shape that is narrower than the pad portion. Capacitive input device. In the outer area of the input area, there is a terminal for connecting to the substrate,
The capacitive input device according to claim 2, wherein the terminal is made of the same material as the relay electrode. A display device with an input function comprising the capacitive input device according to any one of claims 1 to 9,
A display device with an input function, in which an image generating device is disposed on the opposite side of the input surface of the capacitance type input device. An electronic device comprising the display device with an input function according to claim 10.

Images