JP2010256716A - Device and method for inspecting pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device which performs a pattern inspection for reducing false defects. <P>SOLUTION: A pattern inspection device 100 includes: an optical image acquisition part 150 which obtains optical image data in a pattern-formed photomask 101; a development circuit 111 which develops design data of a pattern to image data to generate developed image data; a distortion image generation circuit 140 which performs distortion processing to the developed image data to generate distortion image data; a dissimilar index calculation circuit 142 which calculates a dissimilar index showing difference between the developed image data and the distortion image data by each pixel; a reference image generation circuit 112 which performs data processing to the developed image data to generate reference image data to be compared with the optical image data; and a comparison circuit 108 which compares the optical image data with the reference image data under criteria according to the dissimilar index by each pixel. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a pattern inspection apparatus and a pattern inspection method, and relates to, for example, a pattern inspection technique for inspecting a pattern defect of an object to be a sample used for semiconductor manufacture, and is used when a semiconductor element or a liquid crystal display (LCD) is manufactured. The present invention relates to an apparatus for inspecting a defect of an extremely small pattern such as a photomask, a wafer, or a liquid crystal substrate, and an inspection method thereof.

  In recent years, the circuit line width required for a semiconductor element has been increasingly narrowed as a large scale integrated circuit (LSI) is highly integrated and has a large capacity. These semiconductor elements use an original pattern pattern (also referred to as a mask or a reticle, hereinafter referred to as a mask) on which a circuit pattern is formed, and the pattern is exposed and transferred onto a wafer by a reduction projection exposure apparatus called a stepper. It is manufactured by forming a circuit. Therefore, a pattern drawing apparatus capable of drawing a fine circuit pattern is used for manufacturing a mask for transferring such a fine circuit pattern onto a wafer. A pattern circuit may be directly drawn on a wafer using such a pattern drawing apparatus. For example, drawing is performed using an electron beam or a laser beam.

  In addition, improvement in yield is indispensable for manufacturing an LSI that requires a large amount of manufacturing cost. However, as represented by a 1 gigabit class DRAM (Random Access Memory), the pattern constituting the LSI is about to be in the order of submicron to nanometer. One of the major factors that reduce the yield is a pattern defect of a mask used when an ultrafine pattern is exposed and transferred onto a semiconductor wafer by a photolithography technique. In recent years, with the miniaturization of LSI pattern dimensions formed on semiconductor wafers, the dimensions that must be detected as pattern defects have become extremely small. Therefore, it is necessary to improve the accuracy of a pattern inspection apparatus that inspects defects in a transfer mask used in LSI manufacturing.

  On the other hand, with the development of multimedia, LCDs (Liquid Crystal Display) are increasing in size of the liquid crystal substrate to 500 mm × 600 mm or more, and TFT (Thin Film Transistor) formed on the liquid crystal substrate. : Thin film transistors) and the like are being miniaturized. Therefore, it is required to inspect a very small pattern defect over a wide range. For this reason, there is an urgent need to develop a sample inspection apparatus for efficiently inspecting defects of a photomask used in manufacturing such a large area LCD pattern and a large area LCD in a short time.

  Here, in a conventional pattern inspection apparatus, an optical image obtained by imaging a pattern formed on a sample such as a lithography mask using a magnifying optical system at a predetermined magnification and an identical pattern on the sample are captured. It is known to perform an inspection by comparing with an optical image. For example, as a pattern inspection method, a “die to die inspection” method in which optical image data obtained by imaging the same pattern at different locations on the same mask is compared, or a CAD used for drawing a mask pattern Image data (reference image data) that is used as a reference for comparison is generated based on drawing data (design data) obtained by converting the data into the inspection device input format, and this is compared with optical image data that is used as measurement data obtained by imaging the pattern. There is a “die to database inspection” method. In the inspection method in such an inspection apparatus, the sample is placed on the stage, and the stage is moved so that the light beam scans on the sample and the inspection is performed. The sample is irradiated with a light beam by a light source and an illumination optical system. The light transmitted or reflected by the sample is imaged on the sensor via the optical system. The image picked up by the sensor is sent to the comparison circuit as optical image (measurement image) data. In the comparison circuit, the reference image data and the optical image data are compared according to an appropriate algorithm after the images are aligned, and if they do not match, it is determined that there is a pattern defect.

  Here, in recent years, with the miniaturization of the pattern on the mask, it has become necessary to detect a defect having a size that is buried in the pixel position shift between the comparison target images, image expansion / contraction, undulation, or sensing noise. However, particularly in die-database inspection, depending on the shape and size of the figure indicated by the design pattern, when generating reference image data in the apparatus, reference image data that is not suitable for comparison with optical image data is generated. May end up. If the comparison with the optical image data is performed using such reference image data, a pseudo defect that is not supposed to be a defect but is determined to be a defect is generated. As a result, the inspection accuracy decreases.

  One approach to solving this problem is to improve the model that generates the reference image, but it is difficult to build a model that is perfect for all of the graphic patterns of various shapes and sizes. Therefore, it is important to distinguish and inspect a reference image that is not suitable for comparison and a reference image that is suitable for comparison.

  Here, an area for changing the inspection threshold for the inspection area on the mask is designated in advance, the area data relating to the inspection apparatus is input, and the inspection threshold is changed to a set threshold for each area specified by the area data. The technique to do is disclosed by literature (for example, refer patent document 1).

  However, in such a technique, before the reference image data is generated in the inspection apparatus, an area must be specified in advance, so that each reference image data actually generated in the inspection apparatus is suitable for comparison. It is not possible to deal with it unless it is known in advance whether or not the image is to be displayed. Therefore, it is not a sufficient technique for solving the above-described problems.

JP 2007-64843 A

  As described above, in die database inspection, reference image data that is not suitable for comparison with optical image data is generated when the reference image data is generated in the apparatus depending on the shape or size of the graphic indicated by the design pattern. May be generated. If the comparison with the optical image data is performed using such reference image data, an accurate inspection cannot be performed and a pseudo defect is generated. As a result, the inspection accuracy decreases.

  Accordingly, an object of the present invention is to provide an apparatus and method for performing pattern inspection that overcomes the above-described problems and reduces pseudo defects.

The pattern inspection apparatus according to one aspect of the present invention includes:
An optical image acquisition unit for acquiring optical image data in a patterned sample to be inspected;
A developed image generating unit that develops the design data of the pattern into image data and generates developed image data;
A strain image data generation unit that performs strain processing on the developed image data and generates strain image data;
For each pixel, a dissimilarity index calculating unit that calculates a dissimilarity index indicating a difference between the developed image data and the strain image data;
A reference image data generation unit that performs data processing on the developed image data and generates reference image data for comparison with the optical image data;
For each pixel, a comparison unit that compares the optical image data and the reference image data under a determination condition according to the dissimilarity index;
It is provided with.

The pattern inspection method according to one aspect of the present invention includes:
Obtaining optical image data in a patterned sample to be inspected;
Expanding the design data of the pattern into image data to generate expanded image data;
Performing strain processing on the developed image data to generate strain image data;
For each pixel, calculating a dissimilarity index indicating a difference between the developed image data and the strain image data;
Performing data processing on the developed image data and generating reference image data for comparison with the optical image data;
A step of comparing the optical image data and the reference image data under a determination condition corresponding to the dissimilarity index for each pixel, and outputting a result;
It is provided with.

  According to the present invention, it is possible to inspect the reference image data that is not suitable for comparison and the reference image data that is suitable for comparison in a pixel unit. Therefore, pseudo defects can be reduced. As a result, it is possible to effectively use the apparatus, for example, preventing re-inspection.

1 is a conceptual diagram showing a configuration of a pattern inspection apparatus in Embodiment 1. FIG. FIG. 4 is a flowchart showing main steps of the pattern inspection method in the first embodiment. 6 is a diagram for explaining an optical image acquisition procedure according to Embodiment 1. FIG. 6 is a diagram for describing filter processing according to Embodiment 1. FIG. 5 is a diagram illustrating an example of a graphic pattern in the first embodiment. FIG. FIG. 10 is a diagram showing another example of the graphic pattern in the first embodiment. FIG. 10 is a diagram showing another example of the graphic pattern in the first embodiment. It is a figure which shows the expansion | deployment image of the figure pattern shown in FIG.5 (b). It is a conceptual diagram which shows an example of the result of having applied the pattern deformation process to the expansion | deployment image of the figure pattern shown in FIG. FIG. 10 is a conceptual diagram illustrating an example of a result of performing pattern reverse deformation processing on the graphic pattern image illustrated in FIG. 9. It is a conceptual diagram which shows an example which displayed the dissimilarity index obtained from the distortion | strain image shown in FIG. 10, and the expansion | deployment image shown in FIG. It is a conceptual diagram which shows the structure of the pattern inspection apparatus in Embodiment 2. FIG. 10 is a flowchart showing main steps of the pattern inspection method in the second embodiment. FIG. 10 is a conceptual diagram illustrating an example of a single precision technique in a second embodiment. It is a conceptual diagram which shows the structure of the pattern inspection apparatus in Embodiment 3. FIG. 10 is a flowchart showing main steps of a pattern inspection method according to Embodiment 3. FIG. 20 is a conceptual diagram for explaining the contents of embedding processing in the third embodiment. FIG. 20 is another conceptual diagram for explaining the contents of the embedding process in the third embodiment. It is a figure for demonstrating another optical image acquisition method.

Embodiment 1 FIG.
FIG. 1 is a conceptual diagram showing the configuration of the pattern inspection apparatus according to the first embodiment. In FIG. 1, a pattern inspection apparatus 100 that inspects a defect of a sample using a substrate such as a mask or a wafer includes an optical image acquisition unit 150 and a control circuit 160. The optical image acquisition unit 150 includes an XYθ table 102, a light source 103, an enlargement optical system 104, a photodiode array 105, a sensor circuit 106, a laser length measurement system 122, an autoloader 130, an illumination optical system 170, and a stripe pattern memory 146. Yes. In the control circuit 160, a control computer 110 serving as a computer transmits a position circuit 107, a comparison circuit 108 as an example of a comparison unit, a development circuit 111, a reference image generation circuit 112, and an autoloader control via a bus 120 serving as a data transmission path. Circuit 113, table control circuit 114, strain image generation circuit 140, dissimilarity index calculation circuit 142, complexity calculation circuit 144, magnetic disk device 109, magnetic tape device 115, and flexible disk device (FD) 116 as an example of a storage device , CRT 117, pattern monitor 118, and printer 119. The XYθ table 102 is driven by an X-axis motor, a Y-axis motor, and a θ-axis motor. In FIG. 1, constituent parts necessary for explaining the first embodiment are described. It goes without saying that the pattern inspection apparatus 100 may normally include other necessary configurations.

  FIG. 2 is a flowchart showing main steps of the pattern inspection method according to the first embodiment. In FIG. 2, the pattern inspection method includes an optical image acquisition step (S102), a development processing step (S202), an image processing step (S212), a distortion processing step (S222), a dissimilarity index calculation step (S224), and a complexity calculation. A series of steps of step (S228) and comparison step (S300) are performed. Further, in the comparison process (S300), a series of internal processes of an area cutout process (S302), an alignment process (S304), and a comparison process process (S306) are performed.

  Before starting the inspection, first, the photomask 101 to be inspected by the autoloader 130 controlled by the autoloader control circuit 113 is placed on the XYθ table 102 provided so as to be movable in the horizontal and rotational directions by the motors of the XYθ axes. And mounted on the XYθ table 102. Further, design pattern information (design data) used when forming the pattern of the photomask 101 is input to the pattern inspection apparatus 100 from the outside of the apparatus and stored in the magnetic disk device 109 which is an example of a storage device (storage unit). .

  The XYθ table 102 is driven by the table control circuit 114 under the control of the control computer 110. It can be moved by a drive system such as a three-axis (XY-θ) motor that drives in the X, Y, and θ directions. For example, step motors can be used as these X motor, Y motor, and θ motor. The movement position of the XYθ table 102 is measured by the laser length measurement system 122 and supplied to the position circuit 107. The photomask 101 on the XYθ table 102 is automatically conveyed from the autoloader 130 driven by the autoloader control circuit 113, and is automatically discharged after the inspection is completed.

  In step S (step) 202, as an optical image acquisition step, the optical image acquisition unit 150 acquires optical image data (measurement data) on the photomask 101 that is a patterned sample to be inspected. Specifically, the optical image data is acquired as follows. The pattern formed on the photomask 101 is irradiated with light by an appropriate light source 103 disposed above the XYθ table 102. The light beam emitted from the light source 103 irradiates the photomask 101 via the illumination optical system 170. A magnifying optical system 104, a photodiode array 105, and a sensor circuit 106 are arranged below the photomask 101, and the light transmitted through the photomask 101 is optically imaged on the photodiode array 105 via the magnifying optical system 104. Is imaged and incident. The magnifying optical system 104 may be automatically focused by an unillustrated autofocus mechanism.

  FIG. 3 is a diagram for explaining an optical image acquisition procedure according to the first embodiment. As shown in FIG. 3, the inspection area is virtually divided into a plurality of strip-shaped inspection stripes 20 having a scan width W, for example, in the Y direction. Then, the operation of the XYθ table 102 is controlled so that the divided inspection stripes 20 are continuously scanned, and an optical image is acquired while moving in the X direction. In the photodiode array 105, images having a scan width W as shown in FIG. 3 are continuously input. Then, after acquiring the image of the first inspection stripe 20, the image of the scan width W is continuously input in the same manner while moving the image of the second inspection stripe 20 in the opposite direction. When an image in the third inspection stripe 20 is acquired, the image is moved in the direction opposite to the direction in which the image in the second inspection stripe 20 is acquired, that is, in the direction in which the image in the first inspection stripe 20 is acquired. While getting the image. In this way, it is possible to shorten a useless processing time by continuously acquiring images. Although the forward (FWD) -backward (BWD) method is used here, the present invention is not limited to this, and a forward (FWD) -forward (FWD) method may be used.

  The pattern image formed on the photodiode array 105 is photoelectrically converted by the photodiode array 105 and further A / D (analog-digital) converted by the sensor circuit 106. The photodiode array 105 is provided with a sensor such as a TDI (Time Delay Integrator) sensor. The TDI sensor images the pattern of the photomask 101 by continuously moving the XYθ table 102 serving as a stage in the X-axis direction. These light source 103, magnifying optical system 104, photodiode array 105, and sensor circuit 106 constitute a high-magnification inspection optical system.

  The measurement data (optical image data) of each inspection stripe 20 output from the sensor circuit 106 is temporarily stored in the stripe pattern memory 146 for each inspection stripe 20. The measurement data of each inspection stripe 20 is sequentially output to the comparison circuit 108 together with data indicating the position of the photomask 101 on the XYθ table 102 output from the position circuit 107. The measurement data is, for example, 8-bit unsigned data for each pixel, and the brightness gradation of each pixel is expressed by, for example, 0 to 255.

  In step S202, as a development processing step, the development circuit 111 reads design data from the magnetic disk device 109 through the control computer 110 for each predetermined area, and outputs the read design data of the photomask 101 as the inspection sample. Conversion (development processing) into developed image data which is value or multivalued image data. The predetermined area may be, for example, an area (area) of an image to be compared with the optical image in a comparison step (S300) described later. For example, an area (area) of 1024 × 1024 pixels is assumed. In the first embodiment, a case where the pixel size of the optical image and the pixel size of the developed image are the same size will be described as an example. However, the present invention is not limited to this, and as will be described later, the pixel size of the optical image and the pixel size of the developed image may be different. The development circuit 111 is an example of a development image generation unit.

  The figure that constitutes the pattern defined in the design data is a basic figure such as a rectangle or triangle. For example, the coordinates (x, y) at the reference position of the figure, the length of the side, and the figure type such as the rectangle or triangle Graphic data defining the shape, size, position, etc. of each pattern graphic is stored with information such as a graphic code serving as a distinguishing identifier.

When such graphic data is input to the expansion circuit 111, it expands to data for each graphic, and interprets graphic codes, graphic dimensions, etc., indicating the graphic shape of the graphic data. Then, binary or multivalued image data is developed as a pattern arranged in a grid having a grid with a predetermined quantization size as a unit. The developed image data (developed image data) is stored in a pattern memory (not shown) in the circuit or in the magnetic disk device 109. In other words, in the occupancy rate calculation unit, the design pattern data is read, and the occupancy rate of the figure in the design pattern is calculated for each cell formed by virtually dividing the inspection area as a cell with a predetermined dimension as a unit, The n-bit occupation ratio data is output to the pattern memory or the magnetic disk device 109. For example, it is preferable to set one square as one pixel. If a resolution of 1/2 ⁸ (= 1/256) is given to one pixel, 1/256 small areas are allocated by the figure area arranged in the pixel, and the occupation ratio in the pixel is set. Calculate. The developed image data is stored in the pattern memory or the magnetic disk device 109 as area-unit image data defined by 8-bit occupancy data for each pixel.

  In S212, as an image processing step, the reference image generation circuit 112 inputs the developed image data, performs data processing (image processing) on the developed image data, and generates reference image data for comparison with the optical image data. To do. The reference image generation circuit 112 is an example of a reference image data generation unit. The reference image generation circuit 112 performs an appropriate filter process on the developed image data.

  FIG. 4 is a diagram for explaining the filter processing in the first embodiment. The optical image data (measurement data) obtained from the sensor circuit 106 is in a state in which the filter is activated by the resolution characteristic of the magnifying optical system 104, the aperture effect of the photodiode array 105, or the like, in other words, in an analog state that continuously changes. For this reason, the developed image data, which is the image data on the design side of which the image intensity (shading value) is a digital value, can also be matched to the measurement data by performing a filtering process according to a predetermined model. For example, filter processing such as resizing processing for performing enlargement or reduction processing, corner rounding processing, or blurring processing is performed. In this way, a reference image to be compared with the optical image is created. The created reference image data is sent to the comparison circuit 108. Similarly to the measurement data, the reference image data is, for example, 8-bit unsigned data in each pixel, and the brightness gradation of each pixel is expressed by 0 to 255. The generated reference image data is stored in a memory (not shown) in the reference image generation circuit 112 or the magnetic disk device 109.

  Using the developed image data generated as described above, reference image data for comparison with optical image data is generated. However, as described above, depending on the shape and size of the graphic indicated by the design pattern, reference image data that is not suitable for comparison with optical image data is generated when the reference image data is generated in the apparatus. Sometimes. Therefore, in the first embodiment, separately from the reference image generation, the generated developed image data is intentionally subjected to distortion processing, and reference image data suitable for comparison is generated from the obtained distortion condition. It is determined whether or not reference image data that is not suitable for comparison is generated.

  Hereinafter, each process from the distortion processing process (S222) to the complexity calculation process (S228) is performed in parallel with the image processing process (S212) that generates the reference image. Alternatively, it is continuously performed from the image processing step (S212). Alternatively, the image processing step (S212) may be continuously performed after the steps from the distortion processing step (S222) to the complexity calculation step (S228) are performed.

  In S212, as a strain processing step, the strain image generation circuit 140 performs strain processing on the developed image data to generate strain image data. The strain image generation circuit 140 is an example of a strain image data generation unit. The distortion process performs two contradictory image processes: a pattern deformation process (a process for deforming a pattern shape) and a pattern reverse deformation process (a process for returning the deformed pattern shape). There are various methods for the two conflicting processes. For example, the following method is used. The pattern deformation process enlarges the pattern size, and the pattern reverse deformation process reduces the pattern size. Alternatively, the pattern deformation process reduces the pattern size, and the pattern reverse deformation process increases the pattern size. That is, the processing order may be reversed. Further, the pattern deformation process and the pattern reverse deformation process may be repeated several times. Here, the pattern enlargement / reduction process may be a general process performed in the process of generating the reference image from the developed image. An example of a graphic pattern that is highly likely to be distorted is shown below.

  FIG. 5 is a diagram showing an example of a graphic pattern in the first embodiment. 5A and 5B, the OPC pattern is arranged at the corner of the central figure. In this way, a graphic pattern whose shape changes at a plurality of locations in an area of about several pixels at the corner of the central graphic is shown. In FIG. 5A and FIG. 5B, the only difference is that the light shielding portion and the light transmitting portion are reversed. That is, they are so-called graphic patterns reversed in black and white.

  FIG. 6 is a diagram showing another example of the graphic pattern in the first embodiment. 6 (a) and 6 (b) show a graphic pattern in which a small linear graphic having a width dimension of about several pixels is widely opened. In FIG. 6A and FIG. 6B, the only difference is that the light shielding portion and the light transmitting portion are reversed. That is, they are so-called graphic patterns reversed in black and white.

  FIG. 7 is a diagram showing another example of the graphic pattern in the first embodiment. FIGS. 7A and 7B show a graphic pattern in which a plurality of rectangles are arranged with a narrow interval of about several pixels between the top, bottom, left and right. In FIG. 7A and FIG. 7B, the difference is that the light shielding portion and the light transmitting portion are reversed. That is, they are so-called graphic patterns reversed in black and white.

  Hereinafter, as an example, the distortion processing will be described using the graphic pattern shown in FIG.

  FIG. 8 is a conceptual diagram showing a developed image of the graphic pattern shown in FIG. FIG. 8 shows a corner area B of the central graphic in which the OPC pattern is arranged and an upper area A in which the OPC pattern is not arranged. Area A includes a simple pattern, and area B includes a complex pattern (step of one pixel). FIG. 8A shows a developed image. FIG. 8B shows pixel values in the vicinity of the upper right corner (region B) of the image shown in FIG.

  FIG. 9 is a diagram illustrating an example of a result of performing pattern deformation processing on the developed image of the graphic pattern illustrated in FIG. In the example of FIG. 9, the result of performing the enlargement process of 0.5 pixels is shown as the pattern deformation process. FIG. 9A shows the result of the pattern deformation process as an image. FIG. 9B shows pixel values near the upper right corner (region B) of the image shown in FIG.

  FIG. 10 is a conceptual diagram illustrating an example of a result of performing pattern reverse deformation processing on the graphic pattern image illustrated in FIG. 9. In the example of FIG. 10, the result of performing the 0.5 pixel reduction process as the pattern deformation process is shown. FIG. 10 shows a strain image in which a slight strain is generated from the graphic shown in FIG. In particular, distortion occurs in the corner of the central graphic where the OPC pattern is arranged. FIG. 10A shows the result of the pattern reverse deformation process as an image. FIG. 10B shows pixel values near the upper right corner (region B) of the image shown in FIG.

  As described above, strain image data can be generated by performing the pattern deformation process and the pattern reverse deformation process. Although the developed images of all graphic patterns are not necessarily distorted by performing the distortion processing, distortion is particularly likely to occur in a pattern whose shape changes within a narrow area. The strain image data is stored in a memory (not shown) in the strain image generation circuit 140 or in the magnetic disk device 109.

In S224, as the dissimilarity index calculation step, the dissimilarity index calculation circuit 142 inputs the developed image data and the distorted image data, and develops the developed image data and the distorted image data for each pixel of the image in the predetermined area. The dissimilarity index R (n) indicating the difference is calculated. The dissimilarity index calculation circuit 142 is an example of a dissimilarity index calculation unit. The dissimilarity index R (n) is obtained by the following equation (1), for example.
(1) R (n) = √ {(B (n) −A (n)) ² }

  Note that the dissimilarity index R (n) indicates the dissimilarity index for the nth pixel. B (n) represents the pixel value of the nth pixel in the developed image, and A (n) represents the pixel value of the nth pixel in the distorted image. However, n is 1, 2, 3,... N, and n ≦ N.

  In equation (1), the dissimilarity index R (n) is expressed as the square root of the square of the difference between the pixel values of the developed image and the distorted image, in other words, the absolute value of the difference between the pixel values of the developed image and the distorted image. However, it is not limited to this. For example, the difference between the pixel values of the developed image and the distorted image may remain as it is. The calculated dissimilarity index R (n) data is stored in a memory (not shown) in the dissimilarity index calculation circuit 142 or in the magnetic disk device 109.

  FIG. 11 is a conceptual diagram showing an example in which the dissimilarity index obtained from the strain image shown in FIG. 10 and the developed image shown in FIG. 8 is displayed as an image. FIG. 11A shows pixel values in the vicinity of the upper right corner (region B) of the image indicated by the dissimilarity index. However, even if an image is displayed with the pixel values of FIG. 11A, it is difficult to see visually, so in FIG. 11B, the dissimilarity is exaggerated for easy understanding. FIG. 11C shows pixel values near the upper right corner (region B) of the image shown in FIG. In FIG. 11, as an example, R (n) = 0 in a pattern portion having a simple shape such as the region A, and the developed image and the strain image match. On the other hand, R (n)> 0 in the pattern portion having a complicated shape such as the region B, which is inconsistent. Thus, by calculating the dissimilarity index R (n), it is possible to find a pixel that can generate optical image data that is not suitable for comparison with optical image data, depending on the magnitude of the value.

  In S228, as a complexity calculation step, the complexity calculation circuit 144 has a complexity Z (n) (identification value) for identifying one of a plurality of determination conditions according to the dissimilarity index R (n). Is calculated. The complexity Z (n) indicates the complexity of the nth pixel. The complexity calculation circuit 144 is an example of an identification value calculation unit. Here, an identification value for identifying a determination condition used when comparing optical image data and reference image data described later in the comparison circuit 108 is calculated. The complexity calculation circuit 144 determines whether the dissimilarity index R (n) is large or small with a plurality of threshold values Lm, and classifies the complexity (ease of distortion) of the pattern shape on the developed image by rank.

  The complexity Z (n) ranks the dissimilarity index R (n) with a plurality of threshold values Lm. m represents a rank value. There are various methods for ranking, for example, the following methods. If the expression of R (n) <threshold value Lm is satisfied, Z (n) = the rank value m indicated by the threshold value Lm. For example, three rank values are set. That is, m = 1, 2, 3. The threshold values of the rank values are L1 = 50, L2 = 100, and L3 = 220 in this order. Here, the threshold value Lm is set to a smaller value as the rank value m is smaller. When determining the dissimilarity index R (n), the dissimilarity index R (n) is used in order from the smallest threshold Lm. Specifically, for example, when R (1) = 46, since R (1) <L1, Z (1) = 1. Further, when R (N) = 210, since R (N) <L3, Z (N) = 3. When R (n) ≧ (maximum value of Lm), the rank value m indicated by the maximum value of Z (n) = Lm may be set. For example, when R (n) = 220, since R (n) ≧ L3, Z (n) = 3. The calculated complexity Z (n) data is stored in a memory (not shown) in the complexity calculation circuit 144 or in the magnetic disk device 109. The calculated complexity Z (n) data is output to the comparison circuit 108.

  In S300, as a comparison process, the comparison circuit 108 compares the optical image data of the corresponding predetermined region with the reference image data for each pixel under the determination condition corresponding to the complexity Z (n). The comparison circuit 108 is an example of a comparison unit. Since the complexity Z (n) is calculated according to the dissimilarity index R (n), in other words, the comparison circuit 108 corresponds to the determination condition according to the dissimilarity index R (n) for each pixel. The optical image data of the predetermined area to be compared is compared with the reference image data. Hereinafter, the processing in the comparison circuit 108 will be specifically described. In the comparison circuit 108, first, optical image data for one stripe is input from the stripe pattern memory 146, and the optical image data for one stripe is cut out with the same area size as the reference image (S302). In this case, it goes without saying that the area to be cut out is matched with the area for generating the reference image. The optical image data in which the region sizes are matched is stored in a memory (not shown) in the comparison circuit 108. On the other hand, the generated reference image data of the predetermined area is also stored in another memory (not shown) in the comparison circuit 108. Then, the optical image data and the reference image data in the same area are read out and aligned (S304). Then, the aligned optical image data and reference image data are compared for each pixel according to the determination condition corresponding to the complexity Z (n), and the presence / absence of a defect is determined (S306). As the determination condition, for example, a threshold value Qm when comparing the two for each pixel according to a predetermined algorithm and determining the presence or absence of a defect corresponds. Alternatively, for example, a comparison algorithm for comparing the two and determining the presence / absence of a defect is applicable.

  When the threshold value Qm is made variable as the determination condition, the comparison process is performed as follows. In the comparison process, for example, the following method is used to determine a defect using a threshold Gm suitable for each complexity Z (n) for the determination threshold Qm used in the comparison algorithm. For example, the comparison algorithm determines a defect when the square value of the difference between the pixel value O (n) of the optical image and the pixel value K (n) of the reference image exceeds the determination threshold value Qm. The determination threshold values Qm when the complexity Z (n) = 1, Z (n) = 2, and Z (n) = 3 are determined as Q1 = 20, Q2 = 40, and Q3 = 60, respectively. The relation table of the complexity Z (n) and the determination threshold may be stored in a memory (not shown) in the comparison circuit 108 or the magnetic disk device 109. For example, if the square value of the difference between O (1) and K (1) is 37 and Z (1) = 1, 37> Q1 and it is determined to be a defect. The comparison algorithm only needs to determine a value indicating the difference or similarity between the two images calculated from the optical image and the reference image using the determination threshold Qm.

  Alternatively, when making the comparison algorithm variable as the determination condition, the comparison process is performed as follows. The comparison circuit 108 compares, for each pixel, the optical image data and the reference image data in a predetermined region with an algorithm corresponding to the complexity Z (n). A plurality of algorithms for comparison processing and a relation table of the complexity Z (n) and the algorithm may be stored in a memory (not shown) in the comparison circuit 108 or in the magnetic disk device 109. In order to select a comparison algorithm suitable for each complexity Z (n), for example, there are the following methods. Assuming that the three algorithm names are Ag, Bg, and Cg, Ag is used when complexity Z (n) = 1, Bg is used when Z (n) = 2, and Cg is used when Z (n) = 3. Keep it. In the comparison between the pixel value O (n) of the optical image and the pixel value K (n) of the reference image, for example, assuming that Z (1) = 2 when n = 1, O (1) and K (1) Are compared using the algorithm Bg. The comparison algorithms Ag, Bg, and Cg may be any algorithms that detect defects by calculating similarities and differences between the optical image and the reference image, respectively. For example, when the square value of the difference between the pixel value of the optical image and the pixel value of the reference image exceeds a threshold value, the defect is determined. Alternatively, for example, a defect is determined when the absolute value of the difference between the pixel value of the optical image and the pixel value of the reference image exceeds a threshold value. In the comparison algorithms Ag, Bg, and Cg, the correction value may be added to or subtracted from the square value of the difference or the absolute value of the difference, and then compared with the threshold value.

  The compared result is output. For example, it is displayed on the CRT 117. Alternatively, it is displayed on the pattern monitor 118. Alternatively, printing is performed by the printer 119. Alternatively, it is stored in the magnetic disk device 109, the magnetic tape device 115, or the FD 116.

  As described above, in the first embodiment, a distorted image is generated using an actually developed image, and the comparison algorithm and the determination threshold are changed based on the degree of distortion. By adopting such a configuration, it is possible to inspect the reference image data that is not suitable for comparison and the reference image data that is suitable for comparison in a pixel unit. Therefore, pseudo defects can be reduced. As a result, it is possible to effectively use the apparatus, for example, preventing re-inspection. Furthermore, it is not necessary to set an area for changing the determination threshold value before inputting data in the pattern inspection apparatus 100. Therefore, even when it is not known in advance whether each reference image data actually generated in the inspection apparatus is an image suitable for comparison can be handled.

Embodiment 2. FIG.
In the first embodiment, the case where the developed image data is generated with the same pixel size as the optical image data has been described. However, the present invention is not limited to this. In the second embodiment, a case will be described in which the generated image data is generated with a higher resolution than the optical image data in order to generate the reference image with high accuracy.

  FIG. 12 is a conceptual diagram showing the configuration of the pattern inspection apparatus according to the second embodiment. 12 is the same as FIG. 1 except that a size adjusting circuit 148 is added. In the following description, the contents other than those described are the same as those in the first embodiment.

  FIG. 13 is a flowchart showing main steps of the pattern inspection method according to the second embodiment. 13 is the same as FIG. 2 except that a size matching step (S226) is added between the dissimilarity index calculation step (S224) and the complexity calculation step (S228).

  In FIG. 13, the contents of the optical image acquisition step (S102) are the same as those in the first embodiment.

  In the development processing step (S202), the development circuit 111 generates a development image with a pixel size smaller than the pixel size of the optical image acquired in the optical image acquisition step (S102). By generating a developed image with a small pixel size, the resolution can be higher than that of the optical image. For example, a developed image is generated with a pixel size that is ½ of the pixel size of the optical image. With this size, the resolution is four times that of the optical image. By increasing the resolution, a highly accurate developed image can be generated.

  As an image processing step (S212), the reference image generation circuit 112 inputs expanded image data having a pixel size smaller than the pixel size of the optical image, performs data processing (image processing) on the expanded image data, and performs optical processing. Reference image data for comparison with the data is generated. The reference image generation circuit 112 is an example of a reference image data generation unit. The reference image generation circuit 112 performs an appropriate filter process on the developed image data. Then, the reference image generation circuit 112 converts (single precision) the reference image data into the same pixel size as the pixel size of the optical image. When the reference image data before single precision is generated with a pixel size ½ of the pixel size of the optical image data, for example, the average value of the pixel values of four pixels is the pixel of the pixel after single precision. A value is preferred. Alternatively, one of the four pixels is also suitable as the pixel value of the pixel after single precision.

  In the distortion processing step (S222), the distortion image generation circuit 140 performs distortion processing on the developed image data having a pixel size smaller than the pixel size of the optical image, and the distortion image data remains the same pixel size as the developed image data. Is generated. That is, distortion image data having a pixel size smaller than the pixel size of the optical image is generated. Since the error is large when the accuracy of the developed image is low, the pixel size of the developed image is not distorted after matching the pixel size of the optical image, but is distorted while the resolution is increased. Thereby, a highly accurate strain image can be generated.

  As the dissimilarity index calculation step (S224), the dissimilarity index calculation circuit 142 receives the developed image data and the strain image data, and is smaller than the pixel size of the optical image for each pixel of the image in the predetermined area. The dissimilarity index R (n) indicating the difference from the distorted image data having a pixel size smaller than the pixel size of the optical image as well as the developed image data having the pixel size is calculated. The dissimilarity index R (n) is obtained by, for example, the above-described formula (1) as in the first embodiment. The calculated dissimilarity index R (n) data a is stored in a memory (not shown) in the dissimilarity index calculation circuit 142 or in the magnetic disk device 109.

  As the size matching step (S226), the size matching circuit 148 uses the dissimilarity index R (n) calculated with the pixel size smaller than the pixel size of the optical image data to correspond to the pixel size of the optical image data. Convert to index R (n). When the pixel size of the optical image data is used as a reference, the pixel size of the dissimilarity index R (n) data a is single-accurate to the pixel size of the optical image data. The size matching circuit 148 is an example of a dissimilarity index conversion unit. The single-precision dissimilarity index R (n) data b is stored in a memory (not shown) in the size matching circuit 148 or in the magnetic disk device 109.

FIG. 14 is a conceptual diagram illustrating an example of a single precision technique according to the second embodiment. FIG. 14 shows a case where the dissimilarity index R (n) data a before single precision is generated with a pixel size that is ½ of the pixel size of the optical image data. Such a pixel 32 is enlarged to a pixel 34 having a size twice as large as the pixel size of the optical image data, and single precision is achieved. Since the four pixels 32 correspond to one pixel 34, the four pixels 32 are collected. When the pixel values R _ij of the four pixels 32 of the dissimilarity index R (n) data a are R ₁₁ , R ₁₂ , R ₂₁ , R _22, it is preferable to make them single precision by the following method. (Ij) indicates the coordinates of the pixel 32. For example, it is preferable that the average value of the pixel values (R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ ) of the four pixels 32 is the pixel value R ′ ₁₁ of the pixel 34. Alternatively, among the pixel values (R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ ) of the four pixels 32, a value having the largest pixel value (dissimilarity index R (n)) is set as the pixel value R ′ ₁₁ of the pixel 34. Is also suitable. Alternatively, among the pixel values (R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ ) of the four pixels 32, the value having the smallest pixel value (dissimilarity index R (n)) is set as the pixel value R ′ ₁₁ of the pixel 34. If the pixel values (R ₁₁ , R ₁₂ , R ₂₁ , R ₂₂ ) of the four pixels 32 are all 0, it is preferable that 0 be used as the pixel value R ′ ₁₁ of the pixel 34 as it is. As shown in FIG. 14, when the pixel size of ½ is made single precision to 1 time, for example, the pixel 32 at the coordinate (1, 1) is used as the base point and the coordinate (2, 1) on the right side is used. Four adjacent pixels 32 of the pixel 32, the pixel 32 at the upper right coordinate (1, 2) and the pixel 32 at the upper right coordinate (2, 2) are converted into one pixel 34. Therefore, next, for example, the pixel 32 of the coordinate (4, 1) on the right side with the pixel 32 of the coordinate (3, 1) spaced one pixel from the pixel 32 of the coordinate (1, 1) as the base point Four adjacent pixels 32, that is, the pixel 32 at the upper adjacent coordinate (3, 2) and the pixel 32 at the upper right coordinate (4, 2) are converted into one pixel 34. In this way, the same pixel 32 is not used twice. As described above, the single-precision dissimilarity index R (n) data b is generated.

  As the complexity calculation step (S228), the complexity calculation circuit 144 determines the complexity Z (n for identifying one of a plurality of determination conditions in accordance with the single precision dissimilarity index R (n). ) (Identification value) is calculated.

  The contents of the comparison step (S300) are the same as those in the first embodiment. As described above, when the developed image is generated with a pixel size smaller than that of the optical image, high accuracy of the dissimilarity index R (n) is obtained by calculating the dissimilarity index R (n) and then making it single precision. Can be calculated.

Embodiment 3 FIG.
In the first and second embodiments, the complexity Z (n) is independently output to the comparison circuit 108. However, the present invention is not limited to this. In the third embodiment, the complexity Z is included in the reference image data. A configuration for embedding (n) will be described.

  FIG. 15 is a conceptual diagram showing the configuration of the pattern inspection apparatus according to the third embodiment. 15 is the same as FIG. 1 except that an embedded circuit 149 is added. In the following description, the contents other than those described are the same as those in the first embodiment.

  FIG. 16 is a flowchart showing main steps of the pattern inspection method according to the third embodiment. 16 is the same as FIG. 2 except that an embedding process (S214) is added between the image processing process (S212) and the comparison process (S300).

  In the third embodiment, as the embedding processing step (S214), the embedding circuit 149 includes the complexity calculated in the complexity calculating step (S228) in the reference image data A generated in the image processing step (S212). Embed Z (n). The reference image data B in which the complexity Z (n) is embedded is stored in a memory (not shown) in the embedding circuit 149 or the magnetic disk device 109. The embedding circuit 149 is an example of an embedding processing unit.

  FIG. 17 is a conceptual diagram for explaining the contents of the embedding process in the third embodiment. Each pixel value of the reference image data A generated in the image processing step (S212) is generated as, for example, 8-bit unsigned data. The complexity Z (n) is embedded in the bits on the lower side in such data. FIG. 17 shows a case where three complexity levels Z (n) = 1, 2, 3 are calculated. In such a case, using the lower 2 bits of the reference image data A, when Z (n) = 1 as shown in FIG. 17A, “00” and Z as shown in FIG. When (n) = 2, it is defined as “01”, and when Z (n) = 3 as shown in FIG. 17C, it is defined as “10”. Thus, if the lower two bits of the reference image data A are identified, the complexity Z (n) of the pixel can be obtained. Even if the lower 2 bits are used for the complexity Z (n), the pixel value corresponding to the lower 2 bits is within the range of the determination error at the time of the comparison determination. Become.

  FIG. 18 is another conceptual diagram for explaining the contents of the embedding process in the third embodiment. FIG. 18 shows a case where two complexity levels Z (n) = 1, 2 are calculated. In such a case, using the least significant bit of the reference image data A, when Z (n) = 1 as shown in FIG. 18A, “0” and as shown in FIG. 18B. When Z (n) = 2, it is defined as “1”. Thereby, if the least significant bit of the reference image data A is identified, the complexity Z (n) of the pixel can be known.

  As a comparison step (S300), the comparison circuit 108 inputs the reference image data B in which the complexity Z (n) is embedded, extracts the complexity Z (n) from the reference image data B, and performs the process for each pixel. Then, the optical image data of the corresponding predetermined region is compared with the reference image data under the determination condition corresponding to the complexity Z (n).

  As described above, according to the third embodiment, the memory capacity for separately storing the complexity Z (n) can be reduced. Further, since the information of the complexity Z (n) can be transferred by the bandwidth for transferring the reference image data B, the transfer bandwidth can be reduced.

  FIG. 19 is a diagram for explaining another optical image acquisition method. In the configuration of FIG. 1, the photodiode array 105 that simultaneously enters the number of pixels of the scan width W is used. However, the configuration is not limited to this, and as shown in FIG. 19, the XYθ table 102 is moved at a constant speed in the X direction. Each time a movement with a constant pitch is detected by the laser interferometer, the laser beam is scanned in the Y direction by a laser scanning optical device (not shown) in the Y direction, and transmitted light or reflected light is detected to a predetermined size. A method of acquiring a two-dimensional image for each area may be used.

  In the above description, what is described as “to part”, “to circuit”, or “to process” can be configured by a computer-operable program. Or you may make it implement by not only the program used as software but the combination of hardware and software. Alternatively, a combination with firmware may be used. When configured by a program, the program is recorded on a recording medium such as the magnetic disk device 109, the magnetic tape device 115, the FD 116, or a ROM (Read Only Memory). For example, the table control circuit 114, the development circuit 111, the reference image generation circuit 112, the distortion image generation circuit 140, the dissimilarity index calculation circuit 142, the complexity calculation circuit 144, the size adjustment circuit 148, and the embedding circuit 149 constituting the arithmetic control unit. Alternatively, the comparison circuit 108 or the like may be configured as an electrical circuit, or may be realized as software that can be processed by the control computer 110. Moreover, you may implement | achieve with the combination of an electrical circuit and software.

  The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, in each embodiment, transmitted light is used, but reflected light or transmitted light and reflected light may be used simultaneously. Needless to say, when the reflected light is used, the pixel value obtained from the transmissive part and the pixel value obtained from the light-shielding part are reversed.

  In addition, although descriptions are omitted for parts and the like that are not directly required for the description of the present invention, such as a device configuration and a control method, a required device configuration and a control method can be appropriately selected and used.

  In addition, all pattern inspection apparatuses or pattern inspection methods that include the elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention.

32, 34 pixels 100 pattern inspection device 101 photomask 102 XYθ table 103 light source 104 magnifying optical system 105 photodiode array 106 sensor circuit 107 position circuit 108 comparison circuit 109 magnetic disk device 110 control computer 111 expansion circuit 112 reference image generation circuit 115 magnetic Tape device 140 Strain image generation circuit 142 Dissimilarity index calculation circuit 144 Complexity calculation circuit 146 Stripe pattern memory 148 Size adjustment circuit 149 Embedding circuit 150 Optical image acquisition unit 160 Control circuit

Claims (8)

An optical image acquisition unit for acquiring optical image data in a patterned sample to be inspected;
A developed image generating unit that develops the design data of the pattern into image data and generates developed image data;
A strain image data generation unit that performs strain processing on the developed image data and generates strain image data;
For each pixel, a dissimilarity index calculating unit that calculates a dissimilarity index indicating a difference between the developed image data and the strain image data;
A reference image data generation unit that performs data processing on the developed image data and generates reference image data for comparison with the optical image data;
For each pixel, a comparison unit that compares the optical image data and the reference image data under a determination condition according to the dissimilarity index;
A pattern inspection apparatus comprising:   The strain image data generation unit generates the strain image data by performing a process of deforming a pattern shape and a process of returning the deformed pattern shape to the developed image data. The pattern inspection apparatus according to claim 1.   The strain image data generation unit generates the strain image data by performing a process of enlarging a pattern size and a process of reducing the enlarged pattern size on the developed image data. The pattern inspection apparatus according to claim 1.   The strain image data generation unit generates the strain image data by performing a process of reducing a pattern size and a process of expanding the reduced pattern size on the developed image data. The pattern inspection apparatus according to claim 1. An identification value calculation unit that calculates an identification value for identifying one of a plurality of determination conditions according to the dissimilarity index;
5. The pattern inspection apparatus according to claim 1, wherein the comparison unit inputs the identification value and performs comparison under a determination condition corresponding to the identification value.   The pattern inspection apparatus according to claim 1, further comprising an embedding processing unit that embeds the identification value in the reference image data. The developed image data is generated with a pixel size smaller than the pixel size of the optical image data,
The strain image data generation unit performs strain processing on the developed image data in a state where the pixel size is smaller than the pixel size of the optical image data, so that the pixel size smaller than the pixel size of the optical image data is obtained. Generating the strain image data in a state;
The dissimilarity index calculation unit calculates the dissimilarity index from the developed image data and the strain image data in a state of a pixel size smaller than the pixel size of the optical image data,
The pattern inspection apparatus further includes:
A dissimilarity index converting unit that converts the dissimilarity index calculated in a state of a pixel size smaller than the pixel size of the optical image data into a dissimilarity index corresponding to the pixel size of the optical image data; The pattern inspection apparatus according to claim 1, wherein the pattern inspection apparatus is a pattern inspection apparatus. Obtaining optical image data in a patterned sample to be inspected;
Expanding the design data of the pattern into image data to generate expanded image data;
Performing strain processing on the developed image data to generate strain image data;
For each pixel, calculating a dissimilarity index indicating a difference between the developed image data and the strain image data;
Performing data processing on the developed image data and generating reference image data for comparison with the optical image data;
A step of comparing the optical image data and the reference image data under a determination condition corresponding to the dissimilarity index for each pixel, and outputting a result;
A pattern inspection method comprising: