JP2010256362A - Semiconductor sensor device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problem that a wire moves and comes in contact with a side surface of a cap tip made of silicon in resin-molding and causes a generation of noise and short circuit between wires when MEMS assembly joined between MEMS tip and the cap tip made of silicon is resin-molded. <P>SOLUTION: The side surface of the cap tip made of silicon is formed by a wet etching. An insulation protection film is formed at the wet etching surface; therefore, the insulation protection film having a high adhesion strength is formed. This method for manufacturing the semiconductor sensor inhibits the generation of noise and short circuit between wires when the wire moves and comes in contact with the side surface of the cap tip in resin-molding. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to MEMS (Micro Electro Mechanical System).
The present invention relates to a semiconductor sensor device having an ems chip and a manufacturing technique thereof, and more particularly to a semiconductor sensor device having a MEMS chip having a movable part and a technique effective when applied to the manufacturing thereof.

By combining semiconductor manufacturing process technology with machining technology and material technology,
The MEMS technology for realizing a system having a three-dimensional microstructure on a semiconductor substrate can be applied to a very wide range of fields. In particular, these semiconductor sensor devices used for automobiles, airplanes, portable terminal devices, toys and the like are attracting attention in the field of detecting physical quantities such as acceleration, angular velocity, and pressure.

These semiconductor sensor devices are characterized by having movable parts formed by MEMS technology. The amount of movement of the movable part is detected by a change in resistance or capacitance of the piezoresistive element, and data processing is performed to obtain values such as acceleration, angular velocity, and pressure. Patent Documents 1 to 3 disclose acceleration sensor devices, Patent Documents 4 to 6 disclose angular velocity sensor devices, and Patent Documents 7 to 8 disclose pressure sensor devices.

JP 2006-133123 A Japanese Patent Laid-Open No. 8-233851 Japanese Patent Laid-Open No. 11-160348 JP 2006-175554 A JP 2003-194545 A JP 2005-524077 gazette JP 2004-132947 A JP-A-10-98201

The structure of the acceleration sensor disclosed in Patent Document 1 will be briefly described with reference to FIG. The semiconductor sensor device will be described using an acceleration sensor device unless otherwise specified. Further, since the structure and configuration of the semiconductor sensor chip used in the semiconductor sensor device conforms to Patent Documents 1 to 8, a part of the detailed description may be omitted. FIG. 9a) shows an exploded perspective view of the three-axis acceleration sensor. The triaxial acceleration sensor 70 includes a case 73 and a sensor chip 71 and an IC regulation plate 7.
2 is fixed with an adhesive such as a resin at a predetermined interval. The chip terminal 78 of the sensor chip 71 is a wire 75 to the IC restriction plate terminal 77, and the IC restriction plate terminal 77 is a wire 76.
The sensor signal is taken out from the external terminal 711. A case lid 74 is fixed to the case 73 with an adhesive. FIG. 9B) is a plan view of the sensor chip 71 as viewed from the sensor upper surface. The sensor chip 71 includes a triaxial acceleration sensor element 7
20 and a chip terminal 78 are formed. The triaxial acceleration sensor element 720 includes a beam portion 712 that forms a pair with a rectangular frame portion 714 and a weight portion 713, and the weight portion 713 is held at the center of the frame portion 714 with two pairs of beam portions 712. A piezoresistive element is formed on the beam portion 712.
An X-axis piezo 715 and a Z-axis piezo 717 are provided for a pair of beams, and a Y-axis piezo 71 is provided for the other pair of beams.
6 is formed.

In the triaxial acceleration sensor 70 shown in FIG. 9, the case 73 and the case lid 74 are made of ceramic such as alumina. Because of the ceramic, there is a limit to reducing the thickness of the case 73 and the case lid 74, and it is difficult not only to reduce the size but also to reduce the weight. Since a metal case terminal 710 and an external terminal 711 are formed in a ceramic case and these are connected within the ceramic, the ceramic case becomes expensive, and it is difficult to realize an inexpensive acceleration sensor as long as the ceramic case is used. The case 73 and the case lid 74 are bonded and sealed with an adhesive resin. Since the resin is used, there is a problem that the air density decreases due to changes in the surrounding environment.

A method for increasing the airtightness is described in Patent Document 9. As shown in FIG.
A substrate 81 on which a large number of S chips are formed (hereinafter referred to as a MEMS substrate) and a substrate 82 on which a large number of cap chips are formed (hereinafter referred to as a cap substrate) are joined together to form a MEMS chip 20.
A MEMS assembly substrate 45 is obtained in which the four movable parts are sealed with the upper and lower cap chips 203.
The separation part 90 indicated by the alternate long and short dash line of the MEMS assembly substrate 45 is cut with a diamond grindstone to obtain a MEMS assembly 80 shown in FIG. The portion to be sealed is limited to the movable portion of the MEMS chip 204, in other words, by shortening the total joint length, it is easy to ensure airtightness. As shown in FIG. 10 c), the MEMS assembly 80 is bonded to the inner bottom portion of the case 83, and the case lid 84 is bonded to the upper side portion of the case 83 to obtain the semiconductor sensor device 85. However, when the MEMS assembly is put in the case as shown in FIG. 10c), it is difficult to reduce the size and the price.

A semiconductor sensor device 86 in which the MEMS assembly 80 is covered with a resin by applying a semiconductor resin sealing technique as disclosed in Patent Document 10 has begun to be put into practical use. In FIG.
An example of resin sealing will be shown. By reducing the thickness of the mold resin 87 to such an extent that the MEMS assembly 80 and the wire 5 do not directly touch the outside air, it is possible to reduce the size and weight. FIG. 10c)
As described above, since the case bonding work or the like is not necessary, the manufacturing cost can be reduced.

Japanese Patent Laid-Open No. 3-2535 JP-A-10-170380

As the semiconductor sensor device 86 in which a large number of MEMS assemblies 80 are covered with resin is manufactured, as shown in FIG. 11, the wires 5 come into contact with portions other than the sensor terminals 205 of the MEMS assemblies, and noise generation and wire are generated. The problem of short circuit between wires occurred at a low rate.
All the contacts of the wire 5 occur between the cap chips 203, and the MEMS chip 204
There was no contact with. The wire 5 welded to the sensor terminal 205 rises, falls with a predetermined curvature, and is connected to the electrode terminal 207. The rising portion of the wire 5 was deformed by the resin and was in contact with the cap chip end surface 208 during resin molding. Since the side surface of the MEMS chip has a simple shape, it is considered that the movement of the resin during the resin molding is simplified and the wire 5 is not deformed.

To prevent the cap tip end face and the wire from coming into contact, the cap tip end face 20
Although the distance between the sensor terminal 205 and the sensor terminal 205 may be increased, it is against the downsizing of the semiconductor sensor device. Conversely, even if the cap chip end face and the wire come into contact with each other, it can be dealt with by adopting an electrically insulating cap chip or insulating the conductive cap chip end face so that noise and short circuit between lines do not occur. Alternatively, it is conceivable to use an insulation-coated wire. However, it is difficult to consider using an insulation-coated wire from an ultrasonic wire bonding method or a ball bonding method. Moreover, when an insulation coating wire is used, the curvature radius which bends a wire must be enlarged, and it is contrary to size reduction. In addition, since the insulated wire is more expensive than the bare wire, the manufacturing cost increases.

Although it is possible to manufacture the cap chip with an electrically insulating material, the MEMS chip is manufactured with silicon, and the thermal expansion coefficient of the MEMS chip and the cap chip is different. It is difficult to select and employ an insulating material whose thermal expansion coefficient is the same as that of silicon, and there is a problem of generation of cracks due to the difference in thermal expansion coefficient. Even when glass with a thermal expansion coefficient almost equal to that of silicon is used as an insulating material, it is inevitable that the manufacturing accuracy of the glass, thinning after bonding, and electrode pad exposure processing are difficult, resulting in high manufacturing costs. .

When an electrically insulating material is added to the side surface of the cap chip after the MEMS assembly is manufactured using the silicon cap chip, it is necessary to mask the surface of the electrode terminal with a photoresist or the like. Since the masking portion is on a surface recessed by several tens to several hundreds of μm from the cap chip, it is very difficult to manufacture a resist mask using a photolithography technique. Masking with tape or the like without using photolithography technology can be considered, but it is difficult to adopt it in terms of masking positional accuracy and work man-hours. It is also conceivable to use a resin material with high coating flexibility. However, since there is a heating process such as reflow when the MEMS chip is mounted on the wiring board or circuit board, there is a risk that the resin is deteriorated.

An object of the present invention is to provide a small and light-weight semiconductor sensor device capable of ensuring electrical insulation between a cap chip and a wire, which is a cause of noise generation and a short circuit between lines, and to obtain airtightness between the MEMS chip and the cap chip and its It is to provide a manufacturing method.

A semiconductor sensor device according to the present invention includes a MEMS assembly formed of a MEMS chip having a movable part and a cap chip that seals at least the movable part of the MEMS chip, and the MEMS assembly is fixed to a wiring board or a circuit board. A semiconductor sensor device in which a chip and a circuit board, a circuit board and a wiring board are connected by wiring, and the circuit board on the wiring board, the wiring, and the MEMS assembly are sealed with a resin member, and the cap chip side surface of the MEMS assembly is It is preferable that the insulating film is formed on a wet etching surface, and an insulating protective film is formed on the wet etching surface.

The MEMS chip is an acceleration sensor, a gyro sensor, a pressure sensor, or the like that detects physical quantities such as acceleration, angular velocity, and pressure. When acceleration, angular velocity, pressure, or the like is applied to the MEMS chip from the outside, it is converted into a physical quantity such as a current, voltage, capacitance, or the like by a resistance element or a capacitance element formed on the movable part of the MEMS chip and output.

By airtightly sealing the movable part of the MEMS chip with a cap chip, it is possible to achieve a structure in which the output value is not easily affected by the atmosphere or pressure. For example, the capacitance C of the capacitance element that detects the capacitance is represented by C = ε ₀ εS / d. Where ε ₀ is the dielectric constant of the vacuum, ε
Is the dielectric constant of the gas in the MEMS assembly, S is the electrode area, and d is the electrode spacing. Since the capacitance changes depending on the dielectric constant, that is, atmosphere (gas) and pressure (degree of vacuum) in the MEMS assembly, it is preferable to hermetically seal the MEMS assembly. Further, in a resistance element that outputs current or voltage, the resistance value of the resistance element is easily affected by moisture and temperature in the atmosphere. Therefore, it is preferable to hermetically seal in order to reduce the influence of moisture or the like mixed in the MEMS assembly on the measurement value.

Silicon is preferably used for the cap chip, and single crystal silicon that is particularly easy to be finely processed is preferable. The MEMS chip is manufactured by applying semiconductor technology such as film formation, etching, and patterning to single crystal silicon. The coefficient of thermal expansion can be matched by producing the cap chip with the same material as the MEMS chip. By matching the coefficient of thermal expansion, MEM
It is hard to break when the S substrate and the cap substrate are joined, or when the temperature changes in other manufacturing processes.
A highly airtight MEMS assembly is obtained. Since the cap chip also has an uneven shape, it is manufactured using film formation, patterning, etching, and the like. By using silicon of the same material as the MEMS chip as the cap chip, the same wet etchant can be used, so there is no need to increase the types of wet etchants and the process can be simplified.

It is important that an insulating protective film is formed on the side of the cap chip that may come into contact with the wire. Formation of the insulating protective film on the MEMS chip facing surface and the MEMS chip facing back surface, which are surfaces other than the cap chip side surface, is optional. Cap chip MEM
Since the wire is not in contact with the back surface opposite to the S chip, the thinned and individualized pieces are kept by wet etching, and it is not necessary to form an insulating protective film. By forming an insulating protective film on the MEMS chip facing surface of the cap chip, the portion other than the back surface facing the MEMS chip can be protected from the wet etching solution, and the shape and dimensions of the cap chip can be stabilized. The insulating protective film formed on the MEMS chip facing surface and the side surface of the cap chip is preferably a continuous film. Even if an insulating protective film is formed at the joint portion with the MEMS chip, there is no problem in the joint and airtightness. By forming an insulating protective film on the entire surface of the cap substrate facing the MEMS substrate, it is not necessary to prepare a resist pattern or the like, and the manufacturing cost can be reduced.

The MEMS chip facing surface side of the cap chip of the present invention is constituted by a joint portion fixed to the MEMS chip, a concave portion that suppresses driving of the movable portion, a cap chip thickness portion, and an electrode pad opening portion. When the cap chip is thinned and separated by wet etching, a part of the cap thickness portion and the electrode pad opening are removed by etching. The depth of the electrode pad opening is formed deeper than the groove for suppressing the driving of the movable part, so that the cap chip can be easily separated.
The MEMS assembly substrate in which the MEMS substrate and the cap substrate are bonded is made thinner by etching the cap substrate, and the electrode pad openings are completely separated. By mechanically removing the insulating protective film of the part of the cap thickness part and the part where only the insulating protective film of the electrode pad opening remains,
Cap tips can be singulated. The amount (thickness) of etching removal by thinning needs to be larger than the thickness of the electrode pad opening.

A recess, a cap thickness part, and an electrode pad opening are formed on the silicon substrate by film formation, photolithography, and etching to suppress driving of the joint and the movable part. At least the electrode pad opening is formed by wet etching. The depth of the electrode pad opening is formed deeper than the thickness of the cap chip. Thereafter, an insulating protective film and a bonding metal are formed.

By forming at least the portion that becomes the side surface of the cap chip by wet etching, the quality of the insulating protective film is improved. The surface formed with a diamond grindstone or sandblast is rough, so the film continuity is poor, and wet etching liquid may infiltrate between the silicon and the film, causing a risk of film peeling or cap chip shape instability. .

In order to prevent the generation of noise and the short circuit between lines, the distance between the side surface of the cap chip and the electrode pad should be as large as possible to prevent the wire from contacting. By making the side surface of the cap chip a {100} surface of silicon, the side surface of the cap chip can be formed vertically. By making the side surface of the cap chip vertical, the distance between the electrode pad and the side wall of the cap chip can be increased, and not only can the wire be prevented from contacting, but also the work efficiency of wire bonding can be improved.

In the semiconductor sensor device of the present invention, the insulating protective film formed on the side surface of the cap chip is:
It is preferable that the electric resistance is 10 ¹⁰ (Ω · cm) or more and the alkali resistance is provided.

Even if a wire touches the cap chip, it does not generate noise or cause a short circuit between lines. Therefore, the electrical resistivity of the insulating protective film is preferably as large as possible. Further, when the cap chip is thinned and separated, it is necessary that the insulating protective film is not etched with an alkaline etching solution. Further, the film needs to be dense and free from defects so that the etching solution does not enter through the insulating protective film. Silicon oxide (> 10 as a film that can be formed by sputtering or CVD
¹⁴ Ω · cm), silicon nitride (> 10 ¹⁴ Ω · cm), alumina (> 10 ¹⁴ Ω · cm)
) And zirconia (10 ¹³ Ω · cm). Alternatively, a film in which these materials are stacked may be used. Since single crystal silicon is used for the cap substrate, a silicon oxide film may be formed by thermal oxidation after forming a recess and an electrode opening groove for suppressing driving of the movable part.

In the semiconductor sensor device of the present invention, the insulating protective film preferably has a thickness of 0.1 μm or more.

When the thickness of the insulating protective film is 0.1 μm or more, it becomes a dense film, and it is possible to ensure insulation and prevent the etching solution from entering. The insulating protective film on the part of the cap thickness part and the electrode pad opening where only the insulating protective film remains can be easily removed mechanically, and the film strength and film adhesion that the insulating protective film on the side of the cap chip does not peel off It is desired to be strong. Although the upper limit film thickness varies slightly depending on the material of the insulating protective film, the upper limit can be approximately 3 μm.

A bonding material such as a low melting point metal or a resin is formed on the cap chip bonding portion on the side facing the MEMS chip. The MEMS substrate and the cap substrate are hermetically fixed with a bonding material. The bonding material is formed at the bonding portion by using a technique such as lift-off, ion milling, etching, or plating. When a material that easily flows during heating, such as a low-melting-point metal or resin, is used as the bonding material, it is preferable to form a groove or the like for blocking the flow of the bonding material on the bonding surface.

The bonding between the MEMS chip and the cap chip is not high temperature resistant because the detection elements, wiring, electrode pads, etc. on the MEMS chip are not resistant to high temperatures, so anodic bonding, low melting point material bonding (low melting point metal bonding, eutectic bonding, low melting point glass, etc. It is preferable to use any method of diffusion bonding and surface activated bonding. The bonding between the MEMS substrate and the cap substrate is more preferably a low melting point material bonding. After aligning the MEMS substrate and the cap substrate, bonding is performed by pressing and heating. The gap generated by the undulation between the MEMS substrate and the cap substrate is filled with the low-melting-point material, so that the airtightness can be improved. For this reason, since it is not necessary to apply a large pressure to force the substrate to swell, the risk of damaging the cap substrate or the like is reduced. In order to keep the space in the MEMS assembly in a vacuum (under reduced pressure) or to fill and hermetically dry nitrogen or an inert gas, it is preferable that bonding can be performed in a vacuum (reduced pressure) atmosphere or in a dry nitrogen or inert gas atmosphere.

The cap substrate is thinned or singulated by wet etching using an aqueous alkaline solution such as an aqueous potassium hydroxide solution, hydrazine, ethylenediamine, or an ammonium hydroxide aqueous solution. The MEMS assembly substrate is immersed in the alkaline aqueous solution, and the cap substrate is thinned and singulated for wet etching. The wet etching amount can be controlled by a combination of the concentration and temperature of the alkaline aqueous solution and the immersion time.

In a structure where a circuit board is mounted on a MEMS substrate, which is often used for capacitive acceleration sensors, gyro sensors, etc., alkali metal ions such as aqueous potassium hydroxide are used when the cap chip is thinned or the electrode is exposed. When an etching solution containing is used, there is a risk that alkali metal ions diffuse into the substrate and the function of the circuit board is deteriorated and becomes defective. Therefore, it is preferable to use an organic alkaline aqueous solution that does not contain alkali metal ions, such as an aqueous tetramethylammonium solution. However, when a tetramethylammonium aqueous solution is used, it is difficult to control the shape of the cap chip because the side etch of the cap chip is very large. Side etching can be prevented by forming an insulating protective film on the side surface of the cap chip.

When the cap substrate is thinned and separated into pieces by wet etching, a portion where only the insulating protective film remains in a part of the cap thickness portion and the electrode pad opening portion is formed. Since this insulating protective film is thin, it can be easily removed by oscillation in the etching solution or cleaning solution or application of ultrasonic waves. It can also be removed by lightly rubbing with a brush. At the time when the insulating protective film is removed, substantial cap chip singulation is completed. The insulating protective film on the side of the cap thickness part is formed on the wet etching surface, so the adhesion of the film is strong, and even if the insulating protective film at the part to be removed with ultrasonic waves or brush is removed, the cap thickness The insulating protective film to be left on the side surface of the portion is not removed.

The removal method of the insulating protective film can be changed by the difference in the insulating protective film thickness. Although it varies depending on the film material, as a guideline, when the thickness of the insulating protective film is 0.1 to 0.5 μm, oscillation in the etching solution or the cleaning solution, and 0.3 to 1.0 μm, ultrasonic waves are applied in the cleaning solution. If it is 0 μm or more, a mechanical removal method using a brush is good. As the thickness of the insulating protective film increases, the removal becomes difficult and the cost of the mechanical equipment used for the removal increases. Therefore, it is preferable in terms of manufacturing cost to make the insulating protective film as thin as possible.

The surface other than the side surface of the MEMS chip is preferably covered with an alkali-resistant aqueous solution material. The MEMS assembly substrate is dipped in a wet etching solution of an alkaline aqueous solution, and the cap substrate is thinned and separated. During wet etching, the movable part of the MEMS chip is hermetically fixed with a cap chip, so it is not exposed to the wet etching solution.
Since parts other than the movable part of the chip are exposed to the wet etching solution, it is preferable to cover the chip with an alkali-resistant aqueous solution material so as not to be wet etched. As the alkali-resistant aqueous solution material, a noble metal material is laminated on the electrode pad, and a material such as silicon oxide or silicon nitride is laminated on the electrode pad at a thickness of 0.1 μm or more. An alkali-resistant aqueous solution material may be laminated on the MEMS chip movable part. Silicon oxide or silicon nitride is C
Films are deposited by VD (Chemical Vapor Deposition), sputtering, or the like. The noble metal material is deposited and formed by sputtering or vacuum deposition. The formed silicon oxide, silicon nitride, and noble metal material can be patterned using a method such as photolithography or dry etching. When the bonding material for bonding the cap substrate and the MEMS substrate is the same as the noble metal material used for the alkali-resistant aqueous solution material, the number of steps can be reduced because the film can be formed simultaneously. The alkali-resistant aqueous solution material does not need to be removed even after the wet etching operation is finished. By leaving without removing, it is possible to reduce the number of man-hours to be removed.

After the cap substrate is thinned and separated by wet etching, the MEMS substrate can be cut with a diamond grindstone to obtain a MEMS assembly. The MEMS substrate can be cut using dry etching such as reactive ion milling or ion milling.
Further, the MEMS assembly can be obtained by cutting the MEMS substrate using a laser.

The circuit board is bonded onto the wiring board using a resin adhesive or a metal paste. Further, the MEMS assembly is bonded onto the circuit board with a resin adhesive or the like. Thereafter, the MEMS assembly and the electrode pads of the circuit board and the wiring board are connected with a metal fine wire (wire) or the like. The connection between the electrode pad and the metal fine wire can be performed by ultrasonic welding or solder welding. Instead of the connection by the metal fine wire, the connection by a solder ball or a ball bond can also be used.

Thermosetting resins such as epoxy resin, silicon resin, and phenol resin can be used for resin sealing of the MEMS assembly and the circuit board, wiring board, and wire. As a molding method, a potting method using a liquid resin or a transfer molding method using a powder resin can be used. In the transfer mold method, a MEMS assembly, a circuit board, a wiring board, and a wire are integrated into a mold, and a resin molded in a tablet shape is loaded into a pod of a molding machine, and an extrusion part of the pod is placed. The resin is softened by heating, and the softened resin in the pod is pressed into the mold by a plunger (pressing mechanism). After the resin is cured in the mold, the resin mold product is taken out from the mold to obtain a semiconductor sensor device. In the potting method, a MEMS assembly, a circuit board, a wiring board, and a wire are integrated into a mold, a liquid resin is poured into the mold, the resin is cured, and then the resin mold product is transferred from the mold. To obtain a semiconductor sensor device.

When a force such as acceleration, angular velocity, pressure, or the like is applied to the MEMS chip from the outside, it is converted into a physical quantity such as current, voltage, capacitance, and the like by a resistance element or a capacitance element formed on the movable part and output.
Since the change in the output physical quantity is very small, an element (amplifying circuit or the like) that amplifies the output is formed on the circuit board. Further, when the element is affected by temperature, it is preferable to mount a temperature correction circuit or the like. The wiring board is a printed circuit or a lead frame.

The semiconductor sensor device of the present invention includes a step of forming a MEMS substrate and a cap substrate,
The step of covering at least the surface of the MEMS substrate with an alkali-resistant aqueous solution material, the step of closely sealing at least the movable part of the MEMS substrate with the upper and lower cap substrates, the cap substrate is thinned by wet etching, and the gap between the cap chips is reduced. A step of forming an insulating protective film, a step of removing the insulating protective film between the cap chips and separating the cap chips into pieces, a step of separating the MEMS substrate into pieces and forming a MEMS assembly, and a circuit board on the wiring board A process of fixing, a process of fixing a cap chip surface of a MEMS assembly on a circuit board, a process of wiring a circuit board and a circuit board, a circuit board and a MEMS assembly, a circuit board and a wiring on the circuit board, and a MEMS assembly It is preferable to have a step of sealing with a resin member.

By forming an insulating protective film on the side surface of the cap chip, it was possible to prevent the generation of noise and the occurrence of a short circuit between lines even when the wire was deformed during resin molding and contacted with the cap chip. In addition, a small and lightweight semiconductor sensor device capable of obtaining the airtightness of the MEMS chip and the cap chip could be provided.

1 is a perspective view of an acceleration sensor chip according to a first embodiment of the present invention. It is the top view and sectional drawing of the acceleration sensor board | substrate of 1st Example of this invention. It is the top view and sectional drawing of the cap board | substrate of the 1st Example of this invention. It is a figure explaining the manufacturing process of the semiconductor sensor apparatus of the 1st Example of this invention. It is the top view and sectional drawing of the cap board | substrate of the 2nd Example of this invention. It is a disassembled perspective view of the MEMS assembly of the 2nd Example of this invention. It is a disassembled perspective view of the MEMS assembly of the 3rd Example of this invention. It is a figure explaining the manufacturing process of the semiconductor sensor apparatus of the 3rd Example of this invention. It is a disassembled perspective view of the conventional triaxial acceleration sensor. It is sectional drawing of the conventional MEMS assembly and a semiconductor sensor apparatus. It is a figure which shows the generation | occurrence | production cause location of the noise and the short circuit between lines in the conventional semiconductor sensor apparatus.

Hereinafter, the present invention will be described in detail based on examples with reference to the drawings. In order to make the explanation easy to understand, the same reference numerals are used for the same parts and parts.

With respect to the first embodiment of the present invention, the structure and manufacturing process of the semiconductor sensor device will be described using an example of an acceleration sensor device with reference to FIGS. Therefore, the MEMS substrate, the acceleration sensor substrate, and the MEMS chip are used synonymously with the acceleration sensor chip. FIG. 1 is a perspective view of an acceleration sensor chip. 2 is a plan view and a cross-sectional view of the acceleration sensor substrate, FIG. 3 is a plan view and a cross-sectional view of the cap substrate, and FIG. 4 is a diagram for explaining a manufacturing process of the semiconductor sensor device.

FIG. 1a) is a perspective view of a sensor chip viewed from the piezoresistive element side, and FIG. As shown in FIG. 1, the acceleration sensor chip 2 includes a piezoresistive element 21 and wiring 22, an electrode pad 24, a joint portion 20 indicated by a two-dot chain line, a beam portion 25, a weight portion 26, a frame portion 27, and the like. Yes. The acceleration sensor chip 2 is manufactured by SOI (Silicon on Ins) having a silicon plate of about 400 μm thickness and a silicon oxide layer of several μm and a silicon layer of about 6 μm.
ulator) wafers were used. A photoresist pattern was formed in the shape of the piezoresistive element 21 on the surface on the silicon layer side. Boron in the silicon layer is 1-3 × 10 ¹⁸ atoms / cm
³ , the piezoresistive element 21 is formed, and the wiring 22 connected to the piezoresistive element 21 is
It formed using the metal sputtering and the dry etching apparatus. The silicon layer and the silicon plate were processed using photolithography and a dry etching apparatus to form a beam portion 25 formed in the silicon layer and a weight portion 26 formed from the silicon layer to the silicon plate. The silicon oxide layer functions as an etching stopper during dry etching of silicon. Since only silicon is dry etched, the silicon plate is dry etched but the silicon oxide layer remains. After dry etching, the silicon oxide layer was removed by wet etching by dipping in an aqueous solution of hydrofluoric acid and ammonium fluoride. Dry etching was performed in plasma in which SF ₆ , an oxygen mixed gas, and a C ₄ F ₈ gas were alternately introduced. A large number of acceleration sensor chips were fabricated on one wafer.

FIG. 2 shows a part of the acceleration sensor substrate 2 ′. 2B) is a plan view of the acceleration sensor substrate on the piezoresistive element 21 side, and FIG. 2A) is a cross-sectional view taken along the line j ′ of FIG. 2B). A plurality of acceleration sensor chips 2 are formed on the acceleration sensor substrate. Separation part 9 indicated by a dashed line
Separated at 0 and separated into pieces. On the upper and lower surfaces of the acceleration sensor substrate 2 ′, there are provided joint portions 20 on which a bonding material to be bonded to the cap substrate is formed. At the joint, Au: 0.2 μm / Ni: 1.0
μm / Cr: 0.1 μm was formed by sputtering. The weight part 26 was formed by dry etching.

FIG. 3 shows a part of the cap substrate 3 ′. 3b) is a plan view seen from the joint portion side of the cap substrate 3 ′, and FIG. 3a) is a cross-sectional view taken along line kk ′ of FIG. 3b). Cap substrate 3 'is 400 μm
The drive suppression groove 31 and the separation groove 32 are formed in a concave shape and the joint portion 20 is formed in a convex shape on one surface of a thick silicon flat plate. The side surface (side surface of the cap chip) of the separation groove 32 is a plane orientation that is a {111} surface. On one surface of the silicon flat plate, 0.5 μm of silicon oxide was laminated, and the pattern of the drive suppression groove 31 was formed by photolithography. Thereafter, 0.1 μm of silicon nitride was laminated to form a pattern of the separation groove 32 of the cap substrate. Next, the separation groove 32 was wet-etched to a depth of 85 μm using a 40 wt% potassium hydroxide aqueous solution at a temperature of 67 ° C. Next, the silicon nitride was removed, and the drive suppression groove 31 was 15 μm deep, and the separation groove 32 was additionally wet etched by 15 μm, so that the separation groove 32 had a depth of 100 μm. An insulating protective film 33 made of silicon nitride was formed to a thickness of 0.3 μm by CVD on the side facing the MEMS substrate. Separation groove 32 and drive suppression groove 31
In the joint portion 20 formed between, Au: 0.2 μm / Ni: 1.0 μm / Cr: 0.1
After forming μm by sputtering, an Au—Sn alloy laminated film was formed by electroplating to a thickness of 4 μm.

After the piezoresistive element 21 of the acceleration sensor, the wiring 22 and the electrode pad 24 were formed, silicon nitride was laminated thereon by CVD by 0.2 μm, and then the silicon nitride on the electrode pad was removed by photolithography and etching. Next, after opening the electrode pad 24 and the joint portion with a photoresist, a laminated film was formed in the order of Cr 0.1 μm-Ni 1.0 μm-Au 0.5 μm by metal sputtering. Next, the photoresist and the metal film other than the electrode pad 24 and the joint 20 were removed, and the portion exposed to the wet etching solution was protected.

The width of the joint portion 20 was set to 60 μm so as to be hermetically sealed. Cap substrate 3 'has a thickness of 40
Since it is set to 0 μm, it has sufficient strength against a pressure of about 10 kN when the cap substrate 3 ′ and the acceleration sensor substrate 2 ′ are pressure bonded, and cracks or cracks may occur during pressure bonding. There was no problem.

A manufacturing process of the semiconductor sensor device of this embodiment will be described with reference to FIG. The cap substrate 3 ′ is bonded to the upper and lower surfaces of the acceleration sensor substrate 2 ′ to obtain the MEMS assembly substrate 45 [FIG.
a)]. The MEMS assembly substrate 45 was immersed in a 40 wt% potassium hydroxide aqueous solution heated to 67 ° C., and the cap substrate 3 ′ was etched down to an etching line 90 ′ indicated by a two-dot chain line to reduce the thickness. The thickness removed by etching is 300 μm. With this thinning of the cap substrate, the silicon in the separation groove 32 is completely removed, and only the insulating protective film 33 is obtained (FIG. 4b).
]. The MEMS assembly substrate 45 was swung up and down and left and right about 10 times in the etching solution to remove the insulating protective film 33 between the cap chips [FIG. 4c)]. A 2000 grinding wheel 60 is used along the separation part 90 of the acceleration sensor substrate 2 ', and the grinding wheel rotational speed is 20000 rpm.
To obtain a MEMS assembly 80 [FIG. 4d)].

A circuit board 4 for performing amplification of signals from the acceleration sensor element, temperature correction, and the like was fixed on the wiring board 6 having a thickness of 200 μm with an epoxy adhesive [FIG. 4e)]. MEMS on circuit board 4
The assembly 80 is fixed with an epoxy resin, and the electrode pad 24 of the MEMS assembly 80 and the electrode pad 41 of the circuit board 4, and the electrode pad 42 of the circuit board 4 and the electrode pad 61 of the wiring board 6 are bare gold having a diameter of 25 μm. The wire 5 was connected with an ultrasonic bonder [Fig. 4f)].

The structure in which the MEMS assembly 80, the circuit board 4, and the wiring board 6 were assembled was molded with the epoxy resin 7 using a transfer molding method. The transfer molding operation was performed according to the following procedure and conditions. The structure in which the MEMS assembly 80, the circuit board 4, and the wiring board 6 are assembled is held at a predetermined position in the molding die. The resin molded in the form of a tablet is loaded into the pod of the molding machine, the extruded part of the pod is heated to soften the resin, and the plunger (
The softened resin in the pod is pressed into the mold by the pressing mechanism). 5 175 ° C resin in the mold
It pressed with the pressure of MPa. The molding time was 2 minutes. After the resin was cured in the mold, the resin mold product was taken out from the mold to obtain the semiconductor sensor device 1 [FIG. 4g]. A mold capable of obtaining 50 semiconductor sensor devices 1 by one transfer molding operation was used.

A second embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a plan view and a sectional view of the cap substrate, and FIG. 6 is an exploded perspective view of the MEMS assembly. Except for the shape of the cap chip 3 facing the MEMS substrate, the material of the insulating protective film 33, and the method of removing the insulating protective film 33 between the cap chips 3, the process is the same as in the first embodiment. As shown in FIG. 5, the concave-convex shape of the cap chip 3 on the side facing the MEMS substrate was formed by forming a pattern of the drive suppression groove 31 using photolithography, after forming 1.0 μm of silicon oxide by thermal oxidation. Furthermore, silicon oxide 0.7μm by thermal oxidation
The pattern of the separation groove 32 of the cap substrate was produced. Next, the separation groove 32 was wet-etched to a depth of 90 μm using a 40 wt% potassium hydroxide aqueous solution at 67 ° C. The silicon oxide is removed, and the drive suppression groove 31 is etched to a depth of 10 μm, the separation groove 32 is additionally wet-etched by 15 μm, and the separation groove 32 is additionally etched by 10 μm to a total depth of 100 μm. . On the surface on which the drive suppression groove 3 and the separation groove 32 were formed, silicon oxide 0.6 μm was formed by thermal oxidation to form an insulating protective film 33.

The joint 20 has Cr: 0.1 μm, Ni: 0.5 μm, Au: 0.2 μm, Au—S
n: 4 μm was formed. Since the side wall of the separation groove 32 is formed by a {100} plane, the MEMS
It could be formed perpendicular to the substrate 2, the distance between the electrode 24 and the side surface of the cap chip 3 could be increased, and contact with the wire could be prevented. The side surface of the drive suppression groove 31 is {11
The shape is composed of a 1} plane and a {100} plane.

The insulating protective film between the cap chips was removed by the following method. The insulating protective film between the cap chips could be almost removed by rocking in the etching solution, but it was completely immersed in the mixed solution of isopropyl alcohol and water and applied with ultrasonic waves. Could be removed. By using a mixed solution of isopropyl alcohol and water, the removed silicon oxide did not adhere again.

A third embodiment of the present invention will be described with reference to FIGS. The MEMS assembly of this example is
This is a capacitive gyro sensor. Since the detection part of the capacitance type gyro sensor is formed on one side of the silicon substrate, it differs from the first and second embodiments in that there is one cap chip. FIG. 7 is an exploded perspective view of the MEMS assembly, and FIG. 8 is a diagram for explaining a manufacturing process of the semiconductor sensor device.

As shown in FIG. 7, the MEMS chip 2 includes a capacitance detection unit 10, a circuit element 11, and a wiring 1.
3, an electrode pad 14, a joint portion 20, and the like. For the production of the MEMS chip 2,
An SOI wafer having a silicon oxide layer of several μm and a silicon layer of several tens of μm on a silicon plate having a thickness of about 500 μm was used. A circuit element 11 for performing signal amplification and the like, a capacitance detection unit 10, and a junction 2 using semiconductor process technology, photolithography technology, and film formation technology on the surface on the silicon layer side
0, an electrode pad 14 was formed. The cap chip has the shape shown in FIGS. 3 and 4 of the first embodiment. The insulating protective film 33 was formed by thermal oxidation and having a silicon oxide thickness of 1.0 μm.

A manufacturing process of the semiconductor sensor device of this embodiment will be described with reference to FIG. The cap substrate 3 ′ is bonded to the surface of the MEMS substrate 2 ′ on which the circuit elements 11 and the capacitance detection unit 10 are formed.
An EMS assembly substrate 45 is obtained [FIG. 8a]. The MEMS assembly substrate 45 was immersed in a 25 wt% tetramethylammonium aqueous solution heated to 70 ° C., and the cap substrate 3 ′ and the MEMS substrate 2 ′ were etched and thinned to an etching line 90 ′ indicated by a two-dot chain line. The thickness removed by etching is 300 μm. With this thinning of the cap substrate, the silicon in the separation groove 32 is completely removed, and only the insulating protective film 33 is obtained [FIG. 8b)]. The insulating protective film 3 between the cap chips is obtained by swinging the MEMS assembly substrate 45 in the etching solution or the cleaning solution.
3 could be almost removed, but the residue was completely removed by brushing several times. [FIG. 8c)]. Laser irradiation was performed along the separation portion 90 of the MEMS substrate 2 ′, and cutting was performed.
A carbon dioxide laser with a rated output of 800 W was used as the laser. Cutting was performed at a feed rate of 1 to 2 m / min to obtain a MEMS assembly 80 [FIG. 8d)].

A MEMS assembly 80 is fixed on the wiring board 6 having a thickness of 200 μm with an epoxy resin, and M
The electrode pad 14 of the EMS assembly 80 and the electrode pad 61 of the wiring board 6 were connected by a bare gold wire 5 having a diameter of 25 μm [FIG. The structure in which the MEMS assembly 80 and the wiring board 6 were assembled was molded with the epoxy resin 7 using a transfer molding method. The transfer molding operation was performed according to the following procedure and conditions. The structure in which the MEMS assembly 80 and the wiring board 6 are assembled is held at a predetermined position in the molding die. A resin molded in a tablet shape is loaded into a pod of a molding machine, the extruded portion of the pod is heated to soften the resin, and the softened resin in the pod is pressed into the mold by a plunger (pressing mechanism). 175 ° C in the mold
The resin was pressed at a pressure of 5 MPa. The molding time was 2 minutes. After the resin was cured in the mold, the resin mold product was taken out from the mold to obtain the semiconductor sensor device 1 [FIG. 8f)]. A mold capable of obtaining 50 semiconductor sensor devices 1 by one transfer molding operation was used.

Using the semiconductor sensor device using the silicon cap having the insulating protective film 33 according to the first to third embodiments of the present invention and the conventional semiconductor sensor device using the silicon cap without the insulating protective film, noise generation and line The presence or absence of a short circuit was evaluated. The number of specimens is 2000 each. In the conventional semiconductor sensor device, the total number of defects including the generation of noise and the short circuit between lines is 8, and the defect rate is 0.4%. In the semiconductor sensor device in which the insulating protective film was formed on the side surface of the cap chip, the number of defects was 0 for all samples of Examples 1 to 3, and the defect rate was 0%. By forming an insulating protective film on the side of the cap chip, it was possible to solve the problems of noise generation and short circuit between lines. Although detailed explanation is omitted, the airtightness of the MEMS chip and the cap chip is
There were no problems.

1 Semiconductor sensor device,
2 acceleration sensor chip,
2 ', 81 MEMS substrate, acceleration sensor substrate,
3,203 cap chip,
3 ', 82 Cap substrate,
4 Circuit board,
5,75,76 wire, 6 wiring board,
7 Epoxy resin, 10 Capacitance detector,
11 circuit elements, 13, 22 wiring,
14, 41, 42 electrode pads, 20 joints,
21 piezoresistive elements, 24 electrode pads,
25,712 beam part, 26,713 weight part,
27,714 frame part, 31 drive suppression groove,
32 separation groove, 33 insulating protective film,
45 MEMS assembly substrate, 60 diamond grinding wheel,
61 electrode pad, 70,720 triaxial acceleration sensor,
71 sensor chip, 72 IC regulation plate,
73 case, 74 case lid,
77 IC regulation plate terminal, 78 chip terminal,
80 MEMS assemblies, 83 cases,
84 Case lid, 85, 86 Semiconductor sensor device,
87 Mold resin, 90 separation part,
90 'etching line, 204 MEMS chip,
205 sensor terminals, 207 electrode terminals,
208 Cap chip end face, 710 Case terminal,
711 External terminal, 715 X-axis piezo,
716 Y-axis piezo, 717 Z-axis piezo.

Claims (1)

A step of forming a MEMS substrate and a cap substrate, a step of covering at least the material surface of the MEMS substrate with an alkali-resistant aqueous solution material, a step of closely sealing at least a movable part of the MEMS substrate with the upper and lower cap substrates, a cap substrate Forming a thin film by wet etching and forming an insulating protective film between the cap chips, removing the insulating protective film between the cap chips to separate the cap chips, and separating the MEMS substrate to form a MEMS assembly The step of fixing the circuit board on the wiring board, the step of fixing the cap chip surface of the MEMS assembly on the circuit board, the step of wiring the wiring board and the circuit board, and the circuit board and the MEMS assembly, on the wiring board A semiconductor sensor comprising a step of sealing the circuit board, wiring, and MEMS assembly with a resin member Manufacturing method of the device.

Images