JP2010251568A - Seal type device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a seal type device in which a gas molecule absorbing material (getter) need not be arranged in a sealing space and a degree of vacuum in the sealing space can be adjusted to a desired one without increasing a manufacturing process, and to provide a method of manufacturing the device. <P>SOLUTION: The seal type device has a cavity formed in a semiconductor substrate and seals the cavity by at least one glass substrate. The device is provided with a first groove formed to lead to the cavity, a second groove formed to lead to a dicing line of the seal type device, a first projection which is formed separately from the first groove and forms a gap in a bonding part of the semiconductor substrate and the glass substrate, and a second projection which is formed separately from the second groove and forms the gap in the bonding part of the semiconductor substrate and the glass substrate. Gas in the cavity is exhausted through the first groove, the second groove, the gap and the dicing line to allow the degree of vacuum to be adjusted to the desired one. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a sealed device in which a semiconductor substrate on which a movable part is formed is sealed with a glass substrate, and a manufacturing method thereof.

  In recent years, various electronic devices have been reduced in size, weight, functionality, and functionality, and electronic components to be mounted have been required to have higher density. In response to such demands, an increasing number of electronic components are manufactured as semiconductor devices. For this reason, in addition to the semiconductor device manufactured as a circuit element, a sensor for detecting a mechanical quantity is also manufactured using the semiconductor device, and a reduction in size and weight is achieved. For example, in an acceleration sensor or an angular velocity sensor having a small and simple structure using a product in the field of MEMS (Micro Electro Mechanical Systems) or a MEMS device, a movable part that is displaced in response to an external force is formed on a semiconductor substrate. A type of sensor (so-called electrostatic capacitance type sensor) in which the displacement is detected using a capacitive element has been put into practical use.

  In such a device having a movable part that is displaced at high speed as a MEMS device, in order to stably displace the movable part, a structure in which the semiconductor substrate is sealed with a sealing material (for example, a glass substrate) is employed. The sealed sealing space is degassed or the like to eliminate the factor that hinders the displacement of the movable part. A device having a sealing structure in which such a movable part is vacuum-sealed is referred to as a sealed device in this document. Sealed devices include SAW (Surface Acoustic Wave) elements, F-BAR (Thin Film Bulk Acoustic Waves Resonators) elements, mirror devices, and the like in addition to MEMS elements. In general, a capacitance type sensor has a weight part that can be displaced with a predetermined degree of freedom in a semiconductor substrate sandwiched between a pair of glass substrates, and the weight part can be displaced with acceleration or angular velocity. It is used as a weight part to detect. The displacement is detected based on the capacitance value of the capacitive element. In particular, in the capacitance type angular velocity sensor, the distance between the electrode and the movable portion is shortened in order to detect the change in the capacitance with high sensitivity.

  In the sealed device as described above, various gas venting methods in the sealed space are known. For example, in a degassing method in which a gas molecule absorbing material (getter) is provided in a sealed space, gas molecules generated in the sealed space when the semiconductor substrate and the glass substrate are anodically bonded are absorbed by the gas molecule absorbing material. Thus, the degree of vacuum in the sealed space is increased.

  Further, in the mechanical quantity sensor that is a sealed device disclosed in Patent Document 1, an exhaust groove is formed for each device in a semiconductor substrate to be multifaceted, and a communication groove that connects the exhaust grooves is formed. Gas is released from the sealed space of each device through the exhaust groove and the communication groove.

  Further, in the sealed device disclosed in Patent Document 2, a spacer made of metal is interposed in a part between the bonding surface of the support substrate and the bonding surface of the sealing substrate, and the temperature rise during anodic bonding is used. Then, the spacer is gradually melted, and gas is vented from the joint surface provided with the spacer.

Japanese Patent Laid-Open No. 2008-580005 JP-A-10-82705

  However, as the conventional degassing method of the sealed device, the degassing method in which a gas molecule absorbing material (getter) is provided in the sealed space requires a step of forming a getter separately from the movable part. This causes an increase in manufacturing cost when manufacturing the stationary device. Moreover, in the degassing method for the sealed device of Patent Document 1, the number of steps for forming the exhaust groove and the communication groove increases, which increases the manufacturing cost when manufacturing the sealed device.

  Further, in the degassing method for the sealed device of Patent Document 2, it is difficult to adjust the melting temperature of the metal provided as the spacer during anodic bonding, and the inside of the sealed space is adjusted to a desired degree of vacuum. It is also difficult.

  In view of the above problems, the present invention makes it unnecessary to provide a gas molecule absorbing material (getter) in the sealed space, and adjusts the degree of vacuum in the sealed space to a desired degree of vacuum without increasing the number of manufacturing steps. An object of the present invention is to provide a sealed device and a manufacturing method thereof.

  A sealed device according to an embodiment of the present invention is a sealed device having a cavity formed in a semiconductor substrate, and sealing the cavity with at least one glass substrate. A first groove formed so as to communicate with the cavity, a second groove formed so as to communicate with a dicing line of the sealed device, and formed separately from the first groove, and the semiconductor substrate and the A first protrusion that forms a gap in the bonding portion with the glass substrate; and a second protrusion that is formed apart from the second groove and forms a gap in the bonding portion between the semiconductor substrate and the glass substrate. The gas in the cavity is evacuated through the first groove and the second groove, the gap, and the dicing line, and adjusted to a desired degree of vacuum.

  A sealed device according to an embodiment of the present invention is a sealed device having a cavity formed in a semiconductor substrate, and sealing the cavity with at least one glass substrate. A first groove formed to communicate with the cavity, an exhaust hole formed in the glass substrate, a second groove formed to communicate with the exhaust hole, and the first groove and the second groove. A projection formed between the semiconductor substrate and the glass substrate to form a gap, and gas in the cavity through the first groove, the second groove, the gap, and the exhaust hole. The vacuum is adjusted to a desired degree of vacuum.

  A sealed device according to an embodiment of the present invention is a sealed device having a cavity formed in a semiconductor substrate, and sealing the cavity with at least one glass substrate. A first protrusion that is spaced apart from the cavity and forms a void at a joint between the semiconductor substrate and the glass substrate; and is spaced apart from a dicing line of the sealed device, and the semiconductor substrate and the A second protrusion that forms a gap in a joint portion with the glass substrate, and exhausts the gas in the cavity through the gap formed by the first protrusion and the second protrusion to adjust to a desired degree of vacuum. It is characterized by that.

  A manufacturing method of a sealed device according to an embodiment of the present invention is a method of manufacturing a sealed device by multiple-faced by sealing a cavity formed by processing a semiconductor substrate with at least one glass substrate. A method for manufacturing a sealed device, comprising: forming a first groove that communicates with the cavity and a second groove that communicates with a dicing line of the sealed device; and a joining portion between the semiconductor substrate and the glass substrate A first protrusion and a second protrusion that form a gap in the first groove and the second groove, respectively, and the cavity and the dicing through the first groove, the second groove, and the gap. First anodic bonding is performed to join the semiconductor substrate and the glass substrate so that a line is connected, and the gas in the cavity is exhausted through the first groove, the second groove, the gap, and the dicing line. Desired true The first groove and the second groove are separated from the gap, and the cavity and the dicing line are separated from each other at a higher voltage than the first anodic bonding. 2 anodic bonding is performed.

  A manufacturing method of a sealed device according to an embodiment of the present invention is a method of manufacturing a sealed device by multiple-faced by sealing a cavity formed by processing a semiconductor substrate with at least one glass substrate. A method for manufacturing a sealed device, wherein a first groove that communicates with the cavity is formed, an exhaust hole is formed in the glass substrate, a second groove that communicates with the exhaust hole is formed, and the semiconductor substrate Protrusions that form voids in the joint portion with the glass substrate are formed between the first groove and the second groove, and the cavity and the exhaust hole pass through the first groove, the second groove, and the gap. First anodic bonding for bonding the semiconductor substrate and the glass substrate is performed so that the gas in the cavity is exhausted through the first groove, the second groove, the gap, and the exhaust hole. The degree of vacuum of the first groove and the second Second anodic bonding for bonding the semiconductor substrate and the glass substrate under a condition of higher voltage than the first anodic bonding so as to divide the gap and the air gap, and the hollow portion and the exhaust hole. It is characterized by performing.

  A manufacturing method of a sealed device according to an embodiment of the present invention is a method of manufacturing a sealed device by multiple-faced by sealing a cavity formed by processing a semiconductor substrate with at least one glass substrate. A method for manufacturing a sealed device, wherein a first protrusion and a second protrusion that form a gap in a joint portion between the semiconductor substrate and the glass substrate are respectively formed from the cavity and a dicing line of the sealed device. First anodic bonding is performed to join the semiconductor substrate and the glass substrate so that the cavity and the dicing line communicate with each other through the gap formed by the first protrusion and the second protrusion. Evacuating the gas in the cavity through the gap and the dicing line to adjust to a desired degree of vacuum, dividing the gap of the first protrusion and the gap of the second protrusion, and As serial dicing lines to divide, and performing a second anodic bonding for bonding the glass substrate and the semiconductor substrate under the conditions of the first high voltage than anodic bonding.

  A manufacturing method of a sealed device according to an embodiment of the present invention is a method of manufacturing a sealed device by multiple-faced by sealing a cavity formed by processing a semiconductor substrate with at least one glass substrate. A method for manufacturing a sealed device, comprising: forming a first groove that communicates with the cavity and a second groove that communicates with a dicing line of the sealed device; and a joining portion between the semiconductor substrate and the glass substrate A first protrusion and a second protrusion that form a gap in the first groove and the second groove, respectively, and the cavity is formed through the first groove, the second groove, the gap, and the dicing line. Anodic bonding is performed in which the voltage for bonding the semiconductor substrate and the glass substrate is gradually increased so as to adjust to a desired degree of vacuum while exhausting the gas in the section.

  According to the present invention, it is unnecessary to provide a gas molecule absorbing material (getter) in the sealed space, and the degree of vacuum in the sealed space can be adjusted to a desired degree of vacuum without increasing the number of manufacturing steps. An encapsulated device and a method for manufacturing the same can be provided.

It is a top view which shows schematic structure of the semiconductor substrate which attached the angular velocity sensor which concerns on one embodiment of this invention to many faces. It is a top view which shows the specific structure of the valve | bulb part of FIG. It is a figure which shows the cross-sectional structure seen from the AA 'line of FIG. It is a top view which shows the structure of the common valve | bulb formed in the expansion area | region A of the semiconductor substrate. It is a figure which shows the manufacturing method of the cross-sectional structure seen from the AA 'line | wire of FIG. 2, (A) is a figure which shows the cross-sectional structure of the valve | bulb part at the time of low voltage anodic bonding, (B) is a valve | bulb at the time of evacuation The figure which shows the cross-sectional structure of a part, (C) is a figure which shows the cross-sectional structure of the valve | bulb part at the time of high voltage anodic bonding. It is a figure which shows the example which changed the shape of the 1st groove | channel of FIG. 3, and the 2nd groove | channel, (A) is a figure which shows the example which extended the length of the 1st groove | channel, (B) is a 1st groove | channel and 2nd. It is a figure which shows the example which made the shape of the groove | channel into the L shape. FIG. 4 is a view showing an example in which the shapes of the first protrusion and the second protrusion in FIG. 3 are modified, and (A) is a view showing an example in which the shape of the first protrusion and the second protrusion is a horizontal elliptical shape; FIG. 5 is a diagram showing an example in which the shape of the first protrusion and the second protrusion is a vertical elliptical shape. (A) is a diagram showing an example in which horizontal elliptical first protrusions and second protrusions and linear first grooves and second grooves are arranged, and (B) is a horizontal elliptical first protrusion and second protrusions. It is a figure which shows the example which has arrange | positioned 2 processus | protrusion and L-shaped 1st groove | channel and 2nd groove | channel. (A) is a figure which shows the example which has arrange | positioned the vertical-shaped 1st protrusion and 2nd protrusion of a vertical type, and the linear 1st groove | channel and 2nd groove | channel, (B) is a 1st protrusion of a vertical elliptical shape It is a figure which shows the example which has arrange | positioned the 2nd protrusion, the L-shaped 1st groove | channel, and the 2nd groove | channel. It is a figure which shows the example which comprised the valve | bulb only from the 1st protrusion and the 2nd protrusion. It is a top view which shows the other structural example of the valve | bulb formed for every sensor chip. It is a top view which shows the structure of the expansion area | region A of FIG. It is a figure which shows the cross-sectional structure seen from the BB line of FIG.

  Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings. In the present embodiment, an angular velocity sensor will be described as an example of a sealed device.

(Structure of substrate with multiple sensor chips)
FIG. 1 is a plan view showing a schematic configuration of a semiconductor substrate 101 on which a plurality of angular velocity sensors 100 are multifaceted. In FIG. 1, reference numeral 102 denotes a dicing line indicating the position at which the angular velocity sensor chip is cut for each chip, 103 denotes a valve for evacuating the interior of each angular velocity sensor chip, and 104 denotes a semiconductor substrate 101 processed. It is a cavity inside the formed angular velocity sensor chip. The valve 103 does not form an actual mechanical valve, but forms a structure having a valve function, and the configuration thereof will be described later. The cavity 104 is formed when the semiconductor substrate 101 is processed to form the above-described movable portion in the angular velocity sensor, and is a portion that is sealed by a glass substrate 110 described later and is evacuated. is there.

  Next, a detailed configuration of the valve 103 shown in FIG. 1 will be described with reference to FIGS. In FIG. 2, portions corresponding to the valve 103 are a first groove 201, a second groove 202, a first protrusion 203, and a second protrusion 204. The first groove 201 is formed so as to communicate with the cavity 104 as shown in the figure. The second groove 202 is formed so as to communicate with the dicing line 102 as shown in the drawing. The first protrusion 203 is formed in the vicinity of the first groove 201 as shown in the figure. The second protrusion 204 is formed in the vicinity of the second groove 202 as shown in the drawing.

  As shown in FIG. 3, the first protrusion 203 and the second protrusion 204 form a void 301 between the semiconductor substrate 101 and the glass substrate 110 when the semiconductor substrate 101 and the glass substrate 110 are bonded together. Is for. The first groove 201 and the second groove 202 may be formed on the semiconductor substrate 101 side, or may be formed on the glass substrate 110 side. In order not to increase the number of steps for forming the first groove 201 and the second groove 202, when the movable portion is formed on the semiconductor substrate 101 side by using a DRIE (Deep Reactive Ion Etching) method or the like, It is preferable to form the second groove 202 at the same time. In this case, the depth of the 1st groove | channel 201 and the 2nd groove | channel 202 becomes equivalent to the depth of a movable part, ie, the space | interval of the surface of a movable part, and a glass substrate.

  Further, the first protrusion 203 and the second protrusion 204 may be formed on the semiconductor substrate 101 side or may be formed on the glass substrate 110 side. In order not to increase the number of steps for forming the first protrusions 203 and the second protrusions 204, it is preferable to form the first protrusions 203 and the second protrusions 204 simultaneously when forming the electrodes on the glass substrate 110. In this case, the thickness of the first protrusion 203 and the second protrusion 204 is equal to the thickness of the electrode. The first protrusion 203 and the second protrusion 204 are made of a material (for example, Cr, Ti, TiN, or the like) that is hard to be crushed when the semiconductor substrate 101 and the glass substrate 110 described later are bonded by anodic bonding. Is preferred. This is because when the corners of the first protrusion 203 and the second protrusion 204 are crushed, the position of the tip of the void changes and the dimension of the void becomes unstable.

  In FIG. 2, “the most advanced void at the time of first bonding” indicated by dotted lines around each of the first protrusion 203 and the second protrusion 204 and “the most advanced void at the time of second bonding” indicated by a one-dot chain line are When bonding the glass substrate 110 by anodic bonding, the formation range of voids formed around each of the first protrusion 203 and the second protrusion 204 in a state where the glass substrate 110 is pressed onto the semiconductor substrate 101 is schematically shown. It is shown as an example.

  In the above-described “first bonding” and “second bonding”, the anodic bonding is performed in two portions when the semiconductor substrate 101 and the glass substrate 110 are bonded by anodic bonding in this embodiment. Is shown. During the first anodic bonding, the most distal ends of the voids 301 formed around the first protrusion 203 and the second protrusion 204 are in the range indicated by the dotted lines, and the voids communicate with each other. The communication between these voids also communicates between the first groove 201 and the second groove 202. That is, at the time of the first anodic bonding, the valve 103 is opened with respect to the cavity 104, and the inside of the cavity 104 can be evacuated.

  At the time of the second anodic bonding, the leading edge of each void formed around each of the first protrusion 203 and the second protrusion 204 is reduced to a range indicated by a one-dot chain line, and the voids 301 are divided. By dividing these voids 301, the first groove 201 and the second groove 202 are also divided. That is, at the time of the second anodic bonding, the valve 103 is closed with respect to the cavity 104, and the cavity 104 is sealed.

  As described above, in this embodiment, the structure (the first groove 201 and the second groove 202) functions as the valve 103 when the anodic bonding for bonding the semiconductor substrate 101 and the glass substrate 110 is performed in two steps. The first protrusion 203 and the second protrusion 204) are formed for each angular velocity sensor chip. In the structure that functions as the valve 103, the formation position and shape between the first groove 201, the second groove 202, the first protrusion 203, and the second protrusion 204 can be deformed. Modification examples of the formation position and shape will be described in detail with reference to FIGS.

  Next, the configuration of a common valve different from the valve 103 formed for each sensor chip will be described with reference to FIG. The common valve 105 shown in FIG. 4 is formed between the glass cut edge portion of the semiconductor substrate 101 and the dicing line 102. The common valve 105 is formed so that one end thereof communicates with the dicing line 102 and the other end communicates with the exhaust port 106. The edge portion of the glass cut is a region where a sensor chip pattern is not formed, and is a portion that is cut together with the dicing line 102 described above. The common valve 105 is formed similarly to the configuration shown in FIG. Further, the exhaust port 106 is formed in the same manner as the first groove 201 and the second groove 202 shown in FIG. Although FIG. 4 shows an example in which one common valve 105 is provided, a plurality of common valves 105 may be provided in series. By providing a plurality of common valves 105 in series, it is possible to make a configuration in consideration of operation guarantee when one common valve 105 does not operate.

  The common valve 105 operates in the same manner as the valve 103 described above. At the time of the first anodic bonding, the common valve 105 is opened, communicated with the dicing line 102 communicating with the cavity 104 of each sensor chip, and communicated with the exhaust port 106 to evacuate each sensor chip. The gas generated in the cavity 104 is exhausted from the exhaust port 106. At the time of the second anodic bonding, the common valve 105 is closed to seal between the dicing line 102 and the exhaust port 106. By providing the common valve 105, it is possible to prevent the chemical liquid from entering the dicing line 102 and difficult to remove in the rinsing process when the chemical liquid is used in the process following the anodic bonding.

(Manufacturing method of angular velocity sensor chip)
Next, a method for manufacturing the angular velocity sensor chip having the valve 103 shown in FIGS. 1 to 3 will be described with reference to FIGS. 5A to 5C are diagrams illustrating a series of operations of the valve portion based on the cross-sectional configuration viewed from the line AA ′ in FIG.

(Formation of the first groove 201 and the second groove 202)
As shown in FIG. 1, the angular velocity sensor chip 100 to be multifaceted in the semiconductor substrate 101 is formed by processing the semiconductor substrate 101 by using the DRIE method or the like to move a movable portion (weight portion, movable portion) in each angular velocity sensor chip. A displacement body (not shown) such as a flexure and a cavity 104 are formed. When forming the movable portion, the first groove 201 and the second groove 202 are simultaneously formed so as to communicate with the cavity portion 104 and the dicing line 102 in the positional relationship as shown in FIG. Further, the first groove (first common groove) 201 and the second groove (second common groove) 202 of the common valve 105 portion and the exhaust port 106 are formed at the same time. The dicing line 102, the first groove 201, and the second groove 202 are also formed using the DRIE method or the like.

(Formation of the first protrusion 203 and the second protrusion 204)
Next, a detection and voltage application electrode (not shown) is formed on the glass substrate 110 side at a position facing the above-described movable portion using a PECVD (Plasma Enhanced Chemical Vapor Deposition) method or the like. When forming this electrode, the first protrusion 203 and the second protrusion 204 are simultaneously formed in the vicinity of the first groove 201 and the second groove 202 in the positional relationship shown in FIG. Further, the first protrusion (first common protrusion) 203 and the second protrusion (second common protrusion) 204 of the common valve 105 portion are also formed at the same time. As a material for the electrode, for example, TiN, AlNd, Cr or the like is preferable. In addition, the width of the first groove 201 and the second groove 202 and the height of the first protrusion 203 and the second protrusion 204 are, for example, 0.5 μm. These dimensions are not limited.

(First bonding of semiconductor substrate and glass substrate) (see FIG. 5A)
Next, the first anodic bonding for bonding the semiconductor substrate 101 and the glass substrate 110 is performed. In this first anodic bonding, anodic bonding is performed by applying a lower voltage (for example, 250 V) than in the second anodic bonding. At the time of this low voltage anodic bonding, the glass substrate 110 is deformed by being pressed toward the semiconductor substrate 101 as shown in FIG. 5 (A). The glass substrate 110 between the two protrusions 204 is not bonded to the semiconductor substrate 101. A void 301 is formed around each of the first protrusion 203 and the second protrusion 204. During the first low-voltage anodic bonding, as shown in FIG. 5A, the voids 301 formed around each of the first protrusion 203 and the second protrusion 204 communicate with each other. That is, as shown in FIG. 2, the leading edge of each void 301 is in a range indicated by a dotted line, and the voids 301 communicate with each other. Due to the communication between the voids 301, the first groove 201 and the second groove 202 are also communicated as shown in FIG. That is, the valve 103 is opened with respect to the cavity 104 of each sensor chip. In addition, the voids 301 formed around each of the first protrusion 203 and the second protrusion 204 constituting the common valve 105 communicate with each other, and the first groove 201 and the second groove 202 also communicate with each other. . In other words, the outermost dicing line 102 and the exhaust port 106 communicate with each other through the opened common valve 105. As a result, the cavity 104 of each sensor chip, the dicing line 102, the common valve 105, and the exhaust port 106 communicate with each other. 5A and 5B, the first groove 201 and the second groove 202 that are not visible on the front side and the back side with respect to the drawing are indicated by alternate long and short dash lines.

(Evacuation) (See FIG. 5B)
Next, the inside of the chamber (not shown) in which the semiconductor substrate 101 in which the valve 103 and the common valve 105 are opened by the low voltage anodic bonding is installed is evacuated by a vacuum pump (not shown). During this evacuation, the gas in the cavity 104 of each sensor chip is exhausted through the first groove 201 → the void 301 → the second groove 202 → the dicing line 102 → the common valve 105 → the exhaust port 106. The set vacuum degree (desired vacuum degree) in the cavity 104 of each sensor chip is, for example, 0.1 Torr or less. This set vacuum degree may be changed as appropriate according to the desired specification of the angular velocity sensor (for example, the detection sensitivity of the angular velocity). In the case of a sealed device in which it is desirable to turn off the drive signal that vibrates the movable part and immediately stop the vibration of the movable part, it is preferable that the degree of vacuum is reduced to some extent to provide air resistance.

(Second bonding of the semiconductor substrate and the glass substrate) (see FIG. 5C)
Next, the second anodic bonding for bonding the semiconductor substrate 101 and the glass substrate 110 is performed. In this second anodic bonding, anodic bonding is performed by applying a higher voltage (for example, 1000 V) than in the first anodic bonding. At the time of this high voltage anodic bonding, the glass substrate 110 is further pressed and deformed toward the semiconductor substrate 101 side as indicated by a circle in FIG. 5C, and between the first protrusion 203 and the second protrusion 204. The glass substrate 110 is bonded to the semiconductor substrate 101. The communication of the void 301 formed around each of the first protrusion 203 and the second protrusion 204 at the first anodic bonding is cut off. At the time of the second low-voltage anodic bonding, as shown in FIG. 5C, communication between the voids 301 formed around each of the first protrusion 203 and the second protrusion 204 is cut off. That is, as shown in FIG. 2, the leading edge of each void 301 is in a range indicated by a one-dot chain line, and mutual communication between the voids 301 is cut off. By the division between the voids 301, the communication between the first groove 201 and the second groove 202 is also divided. That is, the valve 103 is closed with respect to the cavity 104 of each sensor chip. Further, the mutual communication between the voids 301 formed around the first protrusion 203 and the second protrusion 204 constituting the common valve 105 is also cut off, and the communication between the first groove 201 and the second groove 202 is also cut off. Will be. That is, when the common valve 105 is closed, the communication with the exhaust port 106 is also disconnected. As a result, each communication among the cavity 104 of each sensor chip, the dicing line 102, the common valve 105, and the exhaust port 106 is disconnected.

(Separation of sensor chip)
The dicing line 102 of the semiconductor substrate 101 on which the plurality of angular velocity sensors 100 are formed is diced with a dicing saw or the like and separated into individual angular velocity sensors 100. As a result of the separation, each angular velocity sensor chip has a structure that functions as the valve 103. However, since the valve 103 is closed by the anodic bonding divided into two times as described above, The vacuum state of the part 104 is maintained.

  As described above, when manufacturing a plurality of angular velocity sensor chips on the semiconductor substrate 101 with multiple faces, the first groove 201 and the second groove 202, the first protrusion 203, and the second groove communicated with the cavity 104 for each sensor chip. The valve 103 composed of the protrusions 204 can be formed in the manufacturing process of the movable part and the electrode. When the anodic bonding of the semiconductor substrate 101 and the glass substrate 110 is performed, the low voltage anodic bonding and the high voltage anodic bonding are performed in two steps. During the first low-voltage anodic bonding, the voids 301 formed by the first protrusions 203 and the second protrusions 204 are communicated with each other to open the valve 103, and then the degree of vacuum of the cavity 104 is adjusted by evacuation. Made it possible. Subsequently, at the time of the second high voltage anodic bonding, the communication between the voids 301 is disconnected, the valve 103 is closed, the cavity 104 is sealed, and a vacuum state can be maintained for each sensor chip. . For this reason, it is possible to perform anodic bonding continuously in the same anodic bonding apparatus, and it is not necessary to take out the wafer in the middle. Further, the number of anodic bonding is not limited to two. For example, anodic bonding in which the voltage is gradually increased may be performed. That is, the anode bonding step is not divided as in the first time and the second time, and the anode for gradually increasing the voltage for bonding the semiconductor substrate 101 and the glass substrate 110 so that the valve 103 is gradually closed and the degree of vacuum is sufficiently increased. An anodic bonding step of performing anodic bonding and evacuation at the same time may be performed by performing bonding.

  Therefore, it is possible to form a configuration that functions as the valve 103 for each sensor chip without increasing the number of manufacturing steps for manufacturing the angular velocity sensor, and to adjust the vacuum degree of the cavity 104 of the sensor chip to a desired vacuum degree. Is possible. As a result, it becomes unnecessary to provide a gas molecule absorbing material (getter) in the cavity, and the movable part of the angular velocity sensor can be stably operated.

(Modifications of the first groove, the second groove, the first protrusion, and the second protrusion)
In FIG. 2, the case where the first groove 201 and the second groove 202 are linear grooves communicating with the cavity 104 and the dicing line 102 is shown in FIG. 2, but the present invention is not limited to this configuration. Instead, the shape may be changed in consideration of the shape and positional relationship of the first protrusion 203 and the second protrusion 204. Moreover, although the case where the shape of the 1st protrusion 203 and the 2nd protrusion 204 was circular was shown, it is not limited to this shape, The positional relationship of the 1st groove | channel 201 and the 2nd groove | channel 202, and formation of the void 301 are shown. The shape may be changed in consideration of the range and the like. Modification examples of these shapes and formation positions will be described below with reference to FIGS.

(Modification of the first groove 201) (see FIG. 6A)
First, a modified example of the first groove 201 will be described with reference to FIG. The first groove 201 only needs to be closer to the first protrusion 203 than the most distal end (dotted line in FIG. 6A) of the void 301 formed at the time of the first anodic bonding described above, as shown in FIG. As shown, it may be extended to the position where the first protrusion 203 is formed. In this case, the first protrusion 203 is formed on the glass substrate 110 side. However, it is preferable that the first groove 201 and the first protrusion 203 are immediately separated when the second anodic bonding starts. Therefore, the first groove 201 may be formed as shown in FIG. When the second anodic bonding starts, the first groove 201 and the first protrusion 203 are immediately separated, thereby reducing the amount of gas entering the cavity 104 during the second anodic bonding. It is desirable that the tip end of is formed close to the tip of the void 301 (the one-dot chain line in FIG. 6A) and to the position entering the first groove 201 side.

(Modification of the first groove and the second groove) (see FIG. 6B)
FIG. 6B is a diagram showing an example in which the shapes of the first groove 201 and the second groove 202 are changed. The first groove 201 and the second groove 202 are L-shaped with respect to the first protrusion 203 and the second protrusion 204. In this case, the first groove 201 and the second groove 202 are located on the first protrusion 203 side and the second protrusion 204 side from the forefront of the void 301 formed during the first anodic bonding (dotted line in FIG. 6B). Both of them are included, and satisfy the function as an exhaust path at the time of evacuation after the first anodic bonding. In addition, the portion of the first groove 201 that communicates with the cavity 104 and the portion of the second groove 202 that communicates with the dicing line 102 are located at a position that is greater than the formation positions of the first groove 201 and the second groove 202 illustrated in FIG. It is formed at a position away from the first protrusion 203 and the second protrusion 204. For this reason, the first groove 201 and the second groove 202 can reliably communicate with the void 301 formed at the first anodic bonding, and can be reliably separated from the void 301 at the second anodic bonding. As a result, the stability of the opening / closing operation can be improved.

(Modifications of the first protrusion and the second protrusion) (see FIGS. 7A and 7B)
Next, a modification of the shape of the first protrusion 203 and the second protrusion 204 will be described with reference to FIG. FIG. 7A is a diagram illustrating an example in which the shape of the first protrusion 203 and the second protrusion 204 is changed to a horizontal ellipse. FIG. 7B is a diagram illustrating an example in which the shape of the first protrusion 203 and the second protrusion 204 is changed to a vertical ellipse. When the shape of the first protrusion 203 and the second protrusion 204 is changed to a horizontal ellipse or a vertical ellipse, the leading edge of the void 301 formed by the first protrusion 203 and the second protrusion 204 at the first anodic bonding is 7A and 7B, the position is indicated by a dotted line. Further, the forefront of the void 301 formed by the first protrusion 203 and the second protrusion 204 at the time of the second anodic bonding is a position indicated by a one-dot chain line in FIGS. In this case, the range of each void 301 formed by the first protrusion 203 and the second protrusion 204 is larger than the range of each void 301 shown in FIG. Therefore, the first protrusion 203 and the second protrusion 204 and the first groove 201 and the second groove 202 can be reliably communicated with each other during the first anodic bonding, and the stability of the vacuuming process can be improved. it can.

(Modifications of the first and second protrusions and the first and second grooves) (see FIGS. 8A and 8B)
Next, the combination of the first projection 203 and the second projection 204 and the first groove 201 and the second groove 202 in the horizontal elliptical shape shown in FIG. 7A will be described with reference to FIG. FIG. 8A is a diagram showing an example in which the first projection 203 and the second projection 204 having a horizontal elliptical shape and the linear first groove 201 and the second groove 202 are arranged. FIG. 8B is a diagram showing an example in which the first projection 203 and the second projection 204 having a horizontal elliptical shape and the L-shaped first groove 201 and the second groove 202 are arranged.

  In FIG. 8A, since the first projection 203 and the second projection 204 having a horizontal elliptical shape are combined with the linear first groove 201 and the second groove 202, each void is formed at the first anodic bonding. The leading edge of 301 can be expanded in the lateral direction, and the communication between each void 301 and the linear first groove 201 and second groove 202 can be ensured. For this reason, the stability of the vacuuming process can be improved. In FIG. 8B, since the first projection 203 and the second projection 204 in the shape of a horizontal ellipse and the L-shaped first groove 201 and the second groove 202 are arranged in combination, The leading edge of the void 301 can be expanded in the lateral direction, and the communication between each void 301 and the L-shaped first groove 201 and the second groove 202 can be made more reliable. For this reason, the stability of the vacuuming process can be improved.

(Modifications of the first and second protrusions and the first and second grooves) (see FIGS. 9A and 9B)
Next, a combination of the first protrusion 203 and the second protrusion 204 and the first groove 201 and the second groove 202 in the vertical elliptical shape shown in FIG. 7B will be described with reference to FIG. . FIG. 9A is a diagram illustrating an example in which the first protrusion 203 and the second protrusion 204 having a vertical elliptical shape, and the linear first groove 201 and the second groove 202 are arranged. FIG. 9B is a diagram showing an example in which the first protrusion 203 and the second protrusion 204 that are formed into a vertical elliptical shape, and the L-shaped first groove 201 and the second groove 202 are arranged.

  In FIG. 9A, since the first projection 203 and the second projection 204 having a vertical elliptical shape and the linear first groove 201 and the second groove 202 are arranged in combination, The leading edge of the void 301 can be expanded in the vertical direction, and the communication between each void 301 and the linear first groove 201 and the second groove 202 can be ensured. For this reason, the stability of the vacuuming process can be improved. In FIG. 9B, since the first projection 203 and the second projection 204 in the shape of a vertical ellipse are combined with the L-shaped first groove 201 and the second groove 202, the first anodic bonding is performed. The leading edge of each void 301 can be expanded in the vertical direction, and the communication between each void 301 and the L-shaped first groove 201 and second groove 202 can be ensured. For this reason, the stability of the vacuuming process can be improved.

(Variation of valve) (see FIG. 10)
Next, an example in which the configuration of the valve 103 is changed will be described with reference to FIG. FIG. 10 is a diagram illustrating an example in which the valve 103 is configured by only the first protrusion 203 and the second protrusion 204. In FIG. 10, the first protrusion 203 having a vertical elliptical shape is formed in the vicinity of the cavity portion 104, and the second protrusion 204 is formed in the vicinity of the dicing line 102. At the first anodic bonding, the forefront of each void 301 formed by the first protrusion 203 and the second protrusion 204 is a position indicated by a dotted line in the drawing. At this time, the voids 301 communicate with each other, the lower end portion of the void 301 on the first projection 203 side communicates with the cavity 104, and the upper end portion of the void 301 on the second projection side communicates with the dicing line 102. That is, the void portion 301 formed around the first protrusion 203 and the second protrusion 204 at the first anodic bonding is used to communicate between the sensor cavity 104 and the dicing line 102. This corresponds to the open state of the valve 103.

  Further, at the time of the second anodic bonding, the forefront of each void 301 formed by the first protrusion 203 and the second protrusion 204 is a position indicated by a one-dot chain line in the drawing. At this time, the communication between the voids 301 is cut off, and the communication with the cavity 104 at the lower end portion of the void 301 on the first protrusion 203 side is cut off, and the dicing line 102 at the upper end portion of the void 301 on the second protrusion side. Communication with is also broken. That is, the communication between the cavity 104 of the sensor and the dicing line 102 is cut off by utilizing the reduction of the void 301 formed around the first protrusion 203 and the second protrusion 204 during the second anodic bonding. Will do. This corresponds to the closed state of the valve 103.

  Therefore, as shown in FIG. 10, the functions as the valve 103 and the common valve 105 can be configured only by the first protrusion 203 and the second protrusion 204, and the configuration of the first groove 201 and the second groove 202 is configured. It becomes possible to make it unnecessary.

(Other configuration examples of valves)
Next, another configuration example of the exhaust path will be described with reference to FIGS. 11 and 12. FIG. 11 is a plan view showing another configuration example of the valve portion for exhausting the cavity of the angular velocity sensor chip formed on the semiconductor substrate, and FIG. 12 is a plan view showing the configuration of the enlarged region A in FIG. FIG. 13 is a diagram showing a cross-sectional configuration viewed from the line BB in FIG.

  In FIG. 11, the angular velocity sensor 400 is characterized in that a valve 403 communicating with the cavity 402 and an exhaust hole 408 a are formed on the right side of the cavity 402 of the sensor formed on the semiconductor substrate 401. The configuration of the valve 403 in the enlarged area A shown in FIG. 11 will be described with reference to FIGS. 12 and 13.

  In FIG. 12, portions corresponding to the valve 403 are a first groove 405, a second groove 406, and a protrusion 407. The first groove 405 is formed so as to communicate with the cavity 402 as shown in the figure. The second groove 406 is formed to communicate with the exhaust hole 408a as shown in the drawing. The protrusion 407 is formed in the vicinity of the first groove 405 and the second groove 406 as shown in the drawing. The exhaust hole 408a is formed on the glass substrate 408 side as shown in FIG.

  The protrusions 407 are for forming voids (voids) 410 between the semiconductor substrate 401 and the glass substrate 408 when the semiconductor substrate 401 and the glass substrate 408 are joined as shown in FIGS. is there. The first groove 405 and the second groove 406 may be formed on the semiconductor substrate 401 side or may be formed on the glass substrate 408 side. In order not to increase the number of steps for forming the first groove 405 and the second groove 406, when forming the movable portion on the semiconductor substrate 401 side by using a DRIE (Deep Reactive Ion Etching) method or the like, It is preferable to form the second groove 406 at the same time. The exhaust hole 408a is formed on the glass substrate 408 side in accordance with the position of the first groove 405 and the second groove 406 formed for each sensor chip. Since the exhaust hole 408a is formed for each sensor chip, it is not necessary to form the common valve 105 and the exhaust port 106 shown in FIG.

  Further, the protrusion 407 may be formed on the semiconductor substrate 401 side or may be formed on the glass substrate 408 side. In order not to increase the number of steps for forming the protrusions 407, it is preferable to form the protrusions 407 at the same time as the electrodes are formed on the glass substrate 408. In this case, the thickness of the protrusion 407 is equal to the thickness of the electrode. The protrusion 407 is preferably made of a material (metal or the like) having a hardness that is not crushed when a semiconductor substrate 401 and a glass substrate 408 described later are bonded by anodic bonding.

  In FIG. 12, “the most advanced void at the time of first bonding” indicated by dotted lines around each of the first protrusion 405 and the second protrusion 406 and “the most advanced void at the time of second bonding” indicated by an alternate long and short dash line are When the glass substrate 408 is bonded by anodic bonding, the formation range of voids formed around the protrusions 407 in a state where the glass substrate 408 is pressed onto the semiconductor substrate 401 is schematically shown. Note that the cross-sectional view shown in FIG. 13 shows the configuration during the first bonding.

  In the above-described “first bonding” and “second bonding”, anodic bonding is performed in two steps when the semiconductor substrate 401 and the glass substrate 408 are bonded by anodic bonding in this embodiment. Is shown. During the first anodic bonding, the tip of the void 410 formed around the protrusion 407 is within the range indicated by the dotted line, and the void 410, the first groove 405, the second groove 406, and the exhaust hole 408a are mutually connected. Communicate with. That is, at the time of the first anodic bonding, the valve 403 is opened with respect to the cavity portion 402, and evacuation in the cavity portion 402 becomes possible from the exhaust hole 408a.

  In the second anodic bonding, the tip of the void 410 formed around the protrusion 407 is reduced to the range indicated by the alternate long and short dash line, and the void 410 is divided from the first groove 405 and the second groove 406. That is, during the second anodic bonding, the valve 403 is closed with respect to the cavity 104, and the cavity 402 is sealed.

  In the first anodic bonding in which the semiconductor substrate 401 and the glass substrate 408 are bonded, anodic bonding is performed by applying a lower voltage (for example, 250 V) than in the second anodic bonding. In the second anodic bonding, the anodic bonding is performed by applying a higher voltage (for example, 1000 V) than in the first anodic bonding. In the anodic bonding, anodic bonding for bonding the semiconductor substrate 401 and the glass substrate 409 is also performed. Since no protrusion is formed on the surface of the semiconductor substrate 401 to be bonded to the glass substrate 409, the semiconductor substrate 401 and the glass substrate 409 are bonded at the first anodic bonding.

  A chamber (not shown) in which the semiconductor substrate 401 in which the valve 403 is opened by the first anodic bonding is installed is evacuated by a vacuum pump (not shown). During this evacuation, the gas in the cavity 402 of each sensor chip is exhausted through the first groove 405 → the void 410 → the second groove 406 → the exhaust hole 408a. The set vacuum degree in the cavity 104 of each sensor chip is, for example, 0.1 Torr or less. This set vacuum degree may be appropriately changed according to desired specifications (for example, angular velocity detection sensitivity) of the angular velocity sensor.

  The dicing line 404 of the semiconductor substrate 401 on which the plurality of angular velocity sensors 400 are formed is diced with a dicing saw or the like and separated into individual angular velocity sensors 400. As a result of the separation, the structure that functions as the valve 403 remains in each angular velocity sensor chip. However, since the valve 403 is closed by the anodic bonding divided into two times as described above, The vacuum state of the part 402 is maintained.

  As described above, when manufacturing a plurality of angular velocity sensor chips on the semiconductor substrate 401 with multiple surfaces, each sensor chip includes the first groove 405 and the second groove 406 that communicate with the cavity 402 and the protrusion 407. The valve 403 and the exhaust hole 408a on the glass substrate 408 side communicating with the valve 403 can be formed in the manufacturing process of the movable part and the electrode. Then, when the anodic bonding of the semiconductor substrate 401 and the glass substrate 408 is performed, the low voltage anodic bonding and the high voltage anodic bonding are performed in two steps. During the first low-voltage anodic bonding, the void 410 formed by the protrusion 407, the first groove 405, the second groove 406, and the exhaust hole 408a are communicated with each other to open the valve 403, and then the vacuum The degree of vacuum of the cavity 402 can be adjusted by pulling. Subsequently, at the time of the second high-voltage anodic bonding, the communication between the void 410, the first groove 405, and the second groove 406 is cut off, the valve 403 is closed, and the cavity 402 is sealed. It was possible to maintain a vacuum state.

  Therefore, it is possible to form the valve 403 for each sensor chip without increasing the number of manufacturing steps for manufacturing the angular velocity sensor, and it is possible to adjust the degree of vacuum of the cavity 402 of the sensor chip to a desired degree of vacuum. . As a result, it becomes unnecessary to provide a gas molecule absorbing material (getter) in the cavity, and the movable part of the angular velocity sensor can be stably operated. Further, by forming the exhaust hole 408a for each sensor chip, the conductance of the exhaust can be made larger than when exhausting through the dicing line 102 and the common valve 105, and the desired degree of vacuum can be adjusted in a short time. It becomes possible.

  In the above-described embodiment, the case where the present invention is applied to the angular velocity sensor has been described. However, the present invention is not limited to this, and can be applied to a sealed device such as an angular velocity sensor. In the above embodiment, when anodic bonding is performed in two steps, the anodic bonding is performed at a low voltage for the first time and the anodic bonding is performed at a high voltage for the second time. You may make it adjust joining time. For example, anodic bonding may be performed at a low temperature for the first time, and anodic bonding may be performed at a high temperature for the second time. Further, the temperature and voltage may be increased during the second anodic bonding. That is, the voltage, temperature, or bonding time at the time of anodic bonding may be adjusted so as to realize the open / close state of the valve at the time of the first anodic bonding and the second anodic bonding.

  Also, when Pyrex (registered trademark) glass or Tempax (registered trademark) glass is bonded as a glass substrate, the thermal expansion coefficient of the silicon substrate is equal so that the silicon substrate as the semiconductor substrate does not warp after bonding. It is necessary to join at a temperature (approximately 300 ° C.). For this reason, when joining Pyrex (registered trademark) glass, Tempax (registered trademark) glass or the like as a glass substrate in the above-described embodiment, it may be bonded at a bonding temperature of about 300 ° C. during the first anodic bonding, Even if the bonding temperature is raised during the second anodic bonding, most of the silicon substrate and the glass substrate are bonded, so that they are not affected by the difference in thermal expansion coefficient.

Furthermore, although an example in which the present invention is applied to a device to be vacuum-sealed has been described in the above embodiment, the present invention is not limited to this. For example, the present invention can be applied to a device in which a rare gas such as Ar gas is sealed in the cavity of the sensor chip to prevent corrosion inside the sensor chip. That is, after removing gases such as O ₂ and H ₂ O generated during the first anodic bonding by vacuum evacuation, Ar gas is introduced into the anodic bonding apparatus, and the cavity of the sensor chip is filled with Ar gas. The present invention is also applicable to a device that seals from the above.

  DESCRIPTION OF SYMBOLS 100,400 ... Angular velocity sensor, 101,401 ... Semiconductor substrate, 102,404 ... Dicing line, 103,403 ... Valve, 104,402 ... Cavity, 105 ... Common valve, 106 ... Exhaust port, 110,408,409 ... Glass substrate, 201, 405 ... 1st groove, 202, 406 ... 2nd groove, 203 ... 1st protrusion, 204 ... 2nd protrusion, 301, 410 ... Void (gap), 407 ... protrusion, 408a ... exhaust hole.

Claims (14)

A sealed device having a cavity formed in a semiconductor substrate and sealing the cavity with at least one glass substrate,
A first groove formed to communicate with the cavity,
A second groove formed to communicate with the dicing line of the sealed device;
A first protrusion formed apart from the first groove and forming a gap in a joint portion between the semiconductor substrate and the glass substrate;
A second protrusion formed apart from the second groove and forming a gap in a joint portion between the semiconductor substrate and the glass substrate;
A sealed device characterized in that a gas in the cavity is exhausted through the first groove, the second groove, the air gap, and the dicing line to adjust to a desired degree of vacuum. A plurality of the sealed devices are formed on the semiconductor substrate in a multifaceted manner,
A first common groove formed to communicate with the dicing line;
A second common groove formed to communicate with an end of the semiconductor substrate or the glass substrate;
A first common protrusion formed apart from the first common groove and forming a gap between the semiconductor substrate and the glass substrate;
A second common protrusion formed apart from the second common groove and forming a gap between the semiconductor substrate and the glass substrate,
The gas in the cavity for each of the sealed devices is exposed to the outside through the first common groove, the second common groove, the dicing line, and the gap formed by the first common protrusion and the second common protrusion. 2. The sealed device according to claim 1, wherein the inside of the cavity for each sealed device is evacuated and adjusted to a desired degree of vacuum. A sealed device having a cavity formed in a semiconductor substrate and sealing the cavity with at least one glass substrate,
A first groove formed to communicate with the cavity,
An exhaust hole formed in the glass substrate;
A second groove formed to communicate with the exhaust hole;
A projection that is formed between the first groove and the second groove and forms a gap in a joint portion between the semiconductor substrate and the glass substrate;
A sealed device characterized in that a gas in the cavity is exhausted through the first groove, the second groove, the air gap, and the exhaust hole to adjust to a desired degree of vacuum. A sealed device having a cavity formed in a semiconductor substrate and sealing the cavity with at least one glass substrate,
A first protrusion formed apart from the cavity and forming a void at a joint between the semiconductor substrate and the glass substrate;
A second protrusion formed away from the dicing line of the sealed device and forming a gap at a joint portion between the semiconductor substrate and the glass substrate,
A sealed device characterized in that a gas in the cavity is exhausted through the gap formed by the first protrusion and the second protrusion and adjusted to a desired degree of vacuum. A method for manufacturing a sealed device, wherein a cavity formed by processing a semiconductor substrate is sealed with at least one glass substrate to manufacture a sealed device with multiple faces,
Forming a first groove that communicates with the cavity and a second groove that communicates with a dicing line of the sealed device;
Forming a first protrusion and a second protrusion, which form a gap in a joint portion between the semiconductor substrate and the glass substrate, separately from the first groove and the second groove,
Performing a first anodic bonding for bonding the semiconductor substrate and the glass substrate so that the cavity and the dicing line communicate with each other through the first groove, the second groove and the gap;
Exhaust the gas in the cavity through the first groove and the second groove, the gap and the dicing line, and adjust to a desired degree of vacuum,
The second anodic bonding is performed under a condition of higher voltage than the first anodic bonding so as to divide the first groove, the second groove, and the gap, and to divide the cavity and the dicing line. A manufacturing method of a sealed device characterized by performing. Forming a first common groove so as to communicate with the dicing line;
Forming a second common groove so as to communicate with an end of the semiconductor substrate or the glass substrate;
Forming a first common protrusion and a second common protrusion, which form a gap in a joint portion between the semiconductor substrate and the glass substrate, separately from the first common groove and the second common groove;
Performing a first anodic bonding for bonding the semiconductor substrate and the glass substrate so that the cavity and the dicing line communicate with each other through the first common groove and the second common groove and the gap;
The gas in the cavity of each sealed device is exposed to the outside through the first common groove, the second common groove, the dicing line, and the gap formed by the first common protrusion and the second common protrusion. Evacuate and adjust to the desired vacuum,
The first groove, the second groove, and the gap are divided, the first common groove and the second common groove are divided, and the cavity portion and the dicing line are divided for each of the sealed devices. 5. The sealed device according to claim 4, wherein the second anodic bonding is performed to bond the semiconductor substrate and the glass substrate under a higher voltage condition than the first anodic bonding. Method.   7. The method of manufacturing a sealed device according to claim 5, wherein the first groove, the second groove, the first common groove, and the second common groove are formed on the semiconductor substrate side.   7. The method of manufacturing a sealed device according to claim 5, wherein the first groove, the second groove, the first common groove, and the second common groove are formed on the glass substrate side.   7. The method of manufacturing a sealed device according to claim 5, wherein the first protrusion, the second protrusion, the first common protrusion, and the second common protrusion are formed on the semiconductor substrate side.   7. The method of manufacturing a sealed device according to claim 5, wherein the first protrusion, the second protrusion, the first common protrusion, and the second common protrusion are formed on the glass substrate side.   7. The sealing mold according to claim 5, wherein when the hollow portion and the dicing line are divided, the second anodic bonding is performed under a condition at a higher temperature than the first anodic bonding. Device manufacturing method. A method for manufacturing a sealed device, wherein a cavity formed by processing a semiconductor substrate is sealed with at least one glass substrate to manufacture a sealed device with multiple faces,
Forming a first groove leading to the cavity,
Forming an exhaust hole in the glass substrate;
Forming a second groove leading to the exhaust hole;
Forming a protrusion between the first groove and the second groove to form a gap in a joint portion between the semiconductor substrate and the glass substrate;
Performing a first anodic bonding for bonding the semiconductor substrate and the glass substrate so that the cavity and the exhaust hole communicate with each other through the first groove and the second groove and the gap;
Exhaust the gas in the cavity through the first groove and the second groove, the gap and the exhaust hole, and adjust to a desired degree of vacuum,
The semiconductor substrate and the glass under a condition of higher voltage than the first anodic bonding so as to divide the first groove, the second groove and the gap, and to divide the cavity and the exhaust hole. A method for manufacturing a sealed device, comprising performing second anodic bonding for bonding substrates. A method for manufacturing a sealed device, wherein a cavity formed by processing a semiconductor substrate is sealed with at least one glass substrate to manufacture a sealed device with multiple faces,
Forming a first protrusion and a second protrusion, which form a gap in a joint portion between the semiconductor substrate and the glass substrate, separately from the cavity and the dicing line of the sealed device;
Performing a first anodic bonding for bonding the semiconductor substrate and the glass substrate so that the cavity and the dicing line communicate with each other through the gap formed by the first protrusion and the second protrusion;
Exhaust the gas in the cavity through the gap and the dicing line, and adjust to a desired degree of vacuum,
The semiconductor substrate and the glass substrate are divided under a condition of higher voltage than the first anodic bonding so as to divide the gap of the first protrusion and the gap of the second protrusion and divide the cavity and the dicing line. A method for manufacturing a sealed device, characterized in that second anodic bonding is performed to bond the two. A method for manufacturing a sealed device, wherein a cavity formed by processing a semiconductor substrate is sealed with at least one glass substrate to manufacture a sealed device with multiple faces,
Forming a first groove that communicates with the cavity and a second groove that communicates with a dicing line of the sealed device;
Forming a first protrusion and a second protrusion, which form a gap in a joint portion between the semiconductor substrate and the glass substrate, separately from the first groove and the second groove,
The voltage for joining the semiconductor substrate and the glass substrate is gradually increased so as to adjust to a desired degree of vacuum while exhausting the gas in the cavity through the first groove, the second groove, the gap, and the dicing line. A method for manufacturing a sealed device, characterized by performing anodic bonding to be performed.