JP2010251563A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve reliability by preventing generation of apparent cracks while satisfying needs in the market as reduction in size and thickness. <P>SOLUTION: A semiconductor device includes: an insulative substrate 1 equipped with a wire 4 for external connection; a semiconductor element 6 fixed onto a principal plane of the insulative substrate 1; a protector 9 fixed onto the semiconductor element 6; a frame 2 provided around the principal plane of the insulative substrate 1; and sealing resin 10 for covering thin metallic lines 7 electrically connecting the wire 4 with the semiconductor element 6. The insulative substrate 1 is formed of ceramic, and the frame 2 is formed of a resin material. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a protective body is fixed on a semiconductor element mounted on an insulating substrate and a frame is fixed to a peripheral portion of an insulating substrate, particularly a semiconductor in which an optical element such as a solid-state imaging device is mounted. Relates to the device.

  In recent years, along with miniaturization of electronic devices such as portable terminals, miniaturization of semiconductor devices is required. Further, semiconductor devices are required not only to be reduced in size and thickness but also to prevent appearance of cracks in order to improve the reliability of their performance.

  Among semiconductor devices, in particular, in a semiconductor device equipped with an optical element such as a solid-state imaging device widely used for a video camera, a digital still camera, or the like, a light-transmitting material such as glass is used as a protective body fixed on the semiconductor element. Since the members are used, there is a strong market demand for preventing external cracks.

  The configuration of a conventional solid-state imaging device is shown in FIG. FIG. 5A is a plan view of a conventional solid-state imaging device, FIG. 5B is a cross-sectional view of the conventional solid-state imaging device, and a cross-section of the portion indicated by the line XX ′ in FIG. It is the figure which showed the structure.

  As shown in FIGS. 5A and 5B, the conventional solid-state imaging device 50 includes an insulating base 51 and the main surface of the insulating base 51, that is, the upper surface in FIG. 5B. A solid-state imaging device 56 fixed to an element mounting portion 53 formed as a recess in the center portion via an adhesive 55, and a glass product fixed to the solid-state imaging device 56 via an adhesive 58. And a protector 59. In addition, the wiring portion 54 formed on the insulating base 51 and the solid-state imaging device 56 are connected by a thin metal wire 57, and the thin metal wire 57 is covered with a sealing resin 60. Although the sealing resin 60 is not necessarily transparent, FIG. 5A shows a state where the sealing resin 60 is seen through. A ceramic frame 52 is formed on the peripheral edge of the insulating substrate 51 on the main surface on which the solid-state imaging device 56 is mounted so as to cover the thin metal wires 57.

  In the conventional solid-state imaging device 50, there is a problem that the volume of the sealing resin 60 changes depending on the environmental temperature in which the solid-state imaging device 50 is used. The protective body 59 is caused by the change in the volume of the sealing resin 60. In order to prevent cracks from occurring, measures have been taken by optimizing the stress relaxation characteristics of the sealing resin 60 material.

  Patent Document 1 discloses an example of a conventional semiconductor device using a molded package made of a thermoplastic resin.

JP-A-2-201960

  In the conventional solid-state imaging device 50, in order to adjust the stress relaxation characteristics of the sealing resin 60, the type of resin and filler to be blended and the blending ratio are optimized, but the sealing resin 60 is required. It is necessary to consider heat resistance, fluidity, coating workability, etc. as characteristics to be improved, and the time and cost for optimizing the resin material increase. In addition, there is a possibility that all required characteristics may not be sufficiently satisfied by adjusting the blending of the resin and filler. In the conventional method of optimizing the stress relaxation characteristics of the sealing resin 60, a preferable solid-state imaging device is used. The risk of not being obtained increases.

  In addition, in the semiconductor device described in Patent Document 1, a molded package is performed using a thermoplastic resin. In this method, an electrical connection between a wiring portion formed on an insulating substrate and a semiconductor element to be mounted is performed. It becomes difficult to form a multilayer wiring. For this reason, for example, when mounting a semiconductor element that requires a large number of wirings exceeding 30 terminals, the area of the insulating substrate is increased and the semiconductor device is increased in size, which is likely to be contrary to market requirements. In addition, since the entire semiconductor element is covered with resin, there is a problem that heat dissipation is inferior, and in order to solve this, it is necessary to take measures to dissipate heat, such as installing a fan cooler or heat sink on the semiconductor device. As a result, the mounting cost of the semiconductor device increases.

  SUMMARY OF THE INVENTION The present invention solves such problems of the prior art and provides a semiconductor device with improved reliability capable of preventing the occurrence of external cracks while responding to market demands for downsizing and thinning. Objective.

  In order to solve the above problems, a semiconductor device according to the present invention includes an insulating base provided with a wiring portion for external connection, a semiconductor element fixed on the main surface of the insulating base, and fixed on the semiconductor element. A protective body, a frame provided at a peripheral edge on the main surface of the insulating base, and a sealing resin that covers a thin metal wire that electrically connects the wiring portion and the semiconductor element, The insulating base is made of ceramic, and the frame is made of a resin material.

  The semiconductor device of the present invention can effectively prevent occurrence of appearance cracks in the protective body without using a special material having excellent stress relaxation characteristics as the sealing resin. For this reason, the reliability of the semiconductor device as a product can be improved, and the product quality against temperature changes is stabilized. For example, it is possible to automate solder bonding using a reflow furnace. Cost reduction can be realized.

FIG. 1 is a diagram illustrating a configuration of a solid-state imaging device as an embodiment of the present invention, FIG. 1A is a plan view illustrating the planar configuration, and FIG. 1B is a sectional view illustrating the sectional configuration. It is a figure which shows the structure of the solid-state imaging device as another embodiment of this invention, Fig.2 (a) is a top view which shows the planar structure, FIG.2 (b) is sectional drawing which shows the cross-sectional structure. is there. It is sectional drawing which shows the manufacturing process of the solid-state imaging device as another embodiment of this invention. It is sectional drawing which shows the structure of the solid-state imaging device of another embodiment of this invention. It is a figure which shows the structure of the conventional solid-state imaging device, Fig.5 (a) is a top view which shows the planar structure, FIG.5 (b) is sectional drawing which shows the cross-sectional structure.

  The semiconductor device according to the present invention includes an insulating base provided with a wiring portion for external connection, a semiconductor element fixed on the main surface of the insulating base, a protector fixed on the semiconductor element, and the insulating A frame body provided at a peripheral edge portion on the main surface of the base body, and a sealing resin that covers a thin metal wire that electrically connects the wiring portion and the semiconductor element, and the insulating base body is formed of ceramic. The frame is made of a resin material.

  By doing in this way, even if the volume of the sealing resin covering the metal thin wire expands / shrinks at the environmental temperature, the frame located around the sealing resin is also formed of the resin material, so that the sealing A change in the volume of the resin can be absorbed. For this reason, it can prevent effectively that an excessive external force is added to the protection body covered with sealing resin, and can prevent that an external appearance crack arises in a protection body.

  In the semiconductor device of the present invention, it is preferable that the semiconductor element is an optical element and the protective body is made of a translucent member. By doing in this way, the semiconductor device which mounts the optical element which met the severe request | requirement of preventing generation | occurrence | production of the appearance crack of the protector which causes an optical influence reliably can be obtained.

  Furthermore, it is preferable that the semiconductor element is a solid-state imaging element.

  Further, it is preferable that the frame body is formed by coating directly on the insulating substrate. By doing in this way, a semiconductor device can be realized more simply and at low cost.

  Hereinafter, as an embodiment of a semiconductor device according to the present invention, a case of a solid-state imaging device in which a semiconductor element mounted on an insulating substrate is a solid-state imaging device such as a CCD or a CMOS sensor will be described as an example.

  FIG. 1A is a plan view of a solid-state imaging device according to an embodiment of the present invention, FIG. 1B is a cross-sectional view of the solid-state imaging device according to the present embodiment, and FIG. It is the figure which showed the cross-section of the part shown as the 'arrow line of sight.

  As shown in FIGS. 1A and 1B, a solid-state imaging device 100 according to the present embodiment includes a ceramic insulating base 1 and a main surface of the insulating base 1, that is, a view in FIG. A solid-state image sensor 6 which is a semiconductor element fixed through an adhesive 5 at the center of the middle upper surface, and a protector 9 fixed through an adhesive 8 on the solid-state image sensor 6 are provided. ing. A resin frame 2 is disposed on the peripheral edge of the main surface of the insulating substrate 1.

  Around the central region of the main surface of the insulating substrate 1 where the solid-state image sensor 6 is mounted, the solid-state image sensor 6 which is a mounted semiconductor element is electrically connected. It has a plurality of wiring portions 4 formed by a metallized wiring body or the like for connecting to an external circuit board or the like. In FIG. 1 (a), the wiring part 4 is shown as being formed four by four in the left-right direction in FIG. 1 (a) in the area where the solid-state imaging device 6 is mounted. Is merely an example, and the wiring part 4 can be arranged in the vertical direction in the figure of the mounting region of the solid-state imaging device 6, and the number of wiring electrodes arranged on each side is not limited to four. Needless to say.

  In the solid-state imaging device 100 of the present embodiment, the end of the wiring unit 4 on the side opposite to the connection with the solid-state imaging device 6 is along the side end of the insulating substrate 1 as shown in FIG. It is folded and pulled out to the back surface side, which is a surface different from the main surface of the insulating substrate 1. By doing so, the surface area of the solid-state imaging device 100 including the wiring portion 4 can be reduced. However, the semiconductor device of the present invention is not limited to this, and the wiring portion 4 is arranged in the outward direction on the back surface side of the insulating substrate 1. It may be arranged so that it spreads out.

  Further, in the solid-state imaging device 100 of the present embodiment, as shown in FIG. 1B, the main surface of the ceramic insulating base 1, that is, the surface on which the solid-state imaging device 6 is mounted has an element at the center. A concave portion is formed as the mounting portion 3, and the solid-state imaging device 6 is disposed so as to be embedded in the concave portion. Thus, by disposing the solid-state imaging device 6 as a semiconductor element in the concave-shaped element mounting portion 3, an electrode pad (not shown) provided on the upper surface of the solid-state imaging device 6 and the insulating base plate 1 are provided. Accordingly, the height of the thin metal wire 7 such as an Au wire for obtaining an electrical connection between the solid-state imaging device 6 and the wiring portion 4 can be shortened. As a result, the entire solid-state imaging device 100 can be reduced in size, and the amount of use of the fine metal wire 7 can be reduced. The time required for the process to be performed can be shortened.

  Needless to say, in the solid-state imaging device 100 of the present embodiment, it is not essential that the element mounting portion 3 at the center of the insulating base 1 is recessed, and the main surface of the insulating base 1 may be a flat surface. . As shown in this embodiment, when the element mounting portion 3 of the insulating substrate 1 is formed as a recess, the recess can be easily formed by forming the insulating substrate 1 as a ceramic laminate. Furthermore, when the insulating substrate 1 is formed of a ceramic laminate, there is an advantage that heat generated by driving the mounted semiconductor element can be easily radiated.

  A frame made of a resin such as a plastic resin is provided at the peripheral edge on the main surface of the insulating substrate 1 including the portion where the wiring portion 4 is formed so as to surround the solid-state imaging device 6 disposed at the center. 2 is fixed by a thermosetting adhesive or the like.

  The solid-state imaging element 6 disposed on the element mounting portion 3 of the insulating base 1 is fixed and mounted by a known adhesive 5 such as silver paste. And the protective body 9 of a translucent member such as glass is covered with an adhesive 8 such as a UV adhesive mainly composed of an epoxy resin so as to cover a light receiving region (not shown) on the upper surface of the solid-state imaging device 6. It is fixed.

  Further, a seal containing epoxy resin as a main component is provided between the frame 2 and the solid-state imaging device 6 so as to cover a portion between the protective body 9 and the frame 2 where the fine metal wires 7 are formed. A stop resin 10 is filled. As can be seen from the figure, in the solid-state imaging device 100 of the present embodiment, the heights of the upper surface of the frame 2, the protective body 9, and the filled sealing resin 10 are the same. In this case, since the upper surface is substantially the same surface, the upper surface of the sealing resin 10 can be used as a reference surface when an optical element such as a lens barrel or a prism is attached. In addition, since an optical element such as a lens barrel or a prism can be directly attached to the upper surface of the sealing resin 10, the entire solid-state imaging device including these optical elements can be downsized.

  In FIG. 1A, in order to help understanding of the specific configuration of the solid-state imaging device of the present embodiment, a state in which the sealing resin 10 is seen through is illustrated in the same manner as FIG. Show.

  The solid-state imaging device 100 of the present embodiment shown in FIG. 1 is different from the conventional solid-state imaging device 50 described with reference to FIG. 5 in that the frame 2 formed on the insulating substrate 1 is an epoxy. It is the point formed with resin, such as. By doing in this way, even if the sealing resin 10 expands or contracts in the temperature change of the surrounding environment, the change in the outer shape can be absorbed as the change in the shape of the frame body 2. For this reason, the stress applied from the sealing resin 10 to the protective body 9 formed of glass or the like is relieved, and it is possible to prevent the destruction of the protective body 9 such as cracks. Product quality reliability is improved.

From such a viewpoint, the resin forming the frame 2 is preferably selected in relation to the sealing resin 10, and in particular, the linear expansion coefficient thereof is 30 to 90 which is the linear expansion coefficient of the sealing resin 10. What approximates × 10 ⁻⁶ K ⁻¹ may be selected. Therefore, as the material of the frame 2, thermosetting resins such as melamine and phenol can be used in addition to the above-described epoxy resin having the same linear expansion coefficient. Among these, if an epoxy resin is selected as the main material, it is useful because it is a widely used material, so that the material cost can be reduced.

  Next, an example of another form of the solid-state imaging device of the present embodiment will be described with reference to FIG.

  2A and 2B are diagrams showing a solid-state imaging device 200 according to another embodiment of the present embodiment, in which FIG. 2A is a plan view and FIG. 2B is BB ′ in FIG. It is sectional drawing which shows the cross-sectional structure of the part shown by the arrow line. In addition, the same code | symbol is attached | subjected to the same member as the solid-state imaging device 100 of this embodiment demonstrated using Fig.1 (a) and FIG.1 (b), and the detailed description is abbreviate | omitted. Moreover, the point which has shown the state which saw through the sealing resin 10 in Fig.2 (a) is also the same as that of Fig.1 (a).

  In the solid-state imaging device 200 shown in FIG. 2, the resin frame body 22 formed on the peripheral portion of the main surface of the insulating base 1 is formed by directly coating the insulating base 1. 1 is different from the solid-state imaging device 100 shown in FIG.

  A method for forming the frame 22 of the solid-state imaging device 200 shown in FIG. 2 will be described with reference to FIG.

  First, as shown in FIG. 3A, a solid-state imaging device 6 having a protective body 9 bonded thereto is fixed to an insulating substrate 1, and electrode pads (not shown) and wirings on the surface of the solid-state imaging device 6 are connected by thin metal wires 7. The unit 4 is connected.

  Next, as shown in FIG. 3 (b), the coating nozzle 12 is scanned over the region where the wiring portion 4 on the peripheral portion of the insulating substrate 1 is formed, and the resin is applied from the coating outlet to be applied. To do. The resin is cured by a general thermosetting oven to form the resin frame 2.

  Finally, as shown in FIG. 3C, the sealing resin 10 is injected and filled from the gap between the frame 2 and the protective body 9, and is cured by a thermosetting oven.

  In the solid-state imaging device 200 formed in this way, compared with the solid-state imaging device 100 shown in FIG. 1, a frame required when the frame body 2 is manufactured by resin molding and fixed on the insulating substrate 1. A mold for obtaining the shape of the body 2 and an adhesive for bonding the frame 2 and the insulating base 1 are not required, and a resin frame can be easily formed around the insulating base 1. For this reason, it is possible to manufacture the solid-state imaging device 200 that can absorb deformation due to the ambient temperature of the sealing resin 10 and can effectively prevent the occurrence of fine cracks in the protector 9 at a lower cost. High cost merit can be obtained.

  Next, still another form of the solid-state imaging device of the present embodiment will be described with reference to FIG.

  FIG. 4 is a view showing a solid-state imaging device 300 according to still another embodiment of the present embodiment, and is a cross-sectional view showing a cross-sectional configuration of a portion corresponding to FIG. 1 (b) and FIG. 2 (b). The same members as those of the solid-state imaging device 100 of this embodiment shown in FIG. 1B and the solid-state imaging device 200 of another embodiment according to this embodiment shown in FIG. The detailed description is omitted.

  In the solid-state imaging device 300 shown in FIG. 4, a resin frame 32 is applied and formed on the peripheral portion of the main surface of the insulating base 1, as in the other solid-state imaging device 200 according to the present embodiment shown in FIG. 2. It is a thing. And the point which is formed so that the resin-made frame 32 may be covered with the metal fine wire 7 differs from the solid-state imaging device 200 shown in FIG. Such a shape can be obtained by solid-state imaging with a thin metal wire 7 as long as it is a method in which a resin frame 32 is applied and formed on the insulating substrate 1 as described in FIG. This is because the frame body 32 can be formed after the electrode pad (not shown) on the surface of the element 6 and the wiring portion 4 are connected.

  In this way, by forming the resin frame 32 so as to cover the fine metal wires 7, it is not necessary to draw out and form the wiring portion 4 on the insulating base 1, and the insulation that defines the outer shape of the solid-state imaging device 300 is eliminated. The surface area of the substrate 1 can be reduced. Therefore, the miniaturized solid-state imaging device 300 can be obtained.

  As described above, the solid-state imaging device in which the light receiving element is mounted as the semiconductor element has been described as an example of the semiconductor device of the present invention. However, the semiconductor device of the present invention is not limited to such a solid-state imaging device. The semiconductor device of the present invention can be applied to optical devices such as light emitting elements and light receiving elements other than solid-state imaging devices, and also to semiconductor devices such as memories and arithmetic circuits that are not optical devices.

  As described above, according to the present invention, a semiconductor device with improved product reliability can be obtained, and in particular, when a resin frame is directly applied on an insulating substrate, the manufacturing cost is increased. Can also be reduced. For this reason, an electronic device on which a semiconductor device is mounted, such as a video camera or a still camera, can also be improved in reliability as compared with a conventional product, and can be manufactured at a low cost.

  The semiconductor device according to the present invention is useful as a device capable of preventing damage to the protector of the mounted semiconductor element.

DESCRIPTION OF SYMBOLS 1 Insulation base | substrate 2 Frame 3 Element mounting part 4 Wiring part 5 Adhesive 6 Semiconductor element (solid-state image sensor)
7 Metal fine wire 8 Adhesive 9 Protection body 10 Sealing resin 100 Solid-state imaging device (semiconductor device)

Claims (4)

An insulating base provided with a wiring portion for external connection;
A semiconductor element fixed on the main surface of the insulating substrate;
A protector fixed on the semiconductor element;
A frame provided at a peripheral edge on the main surface of the insulating base;
A sealing resin that covers a thin metal wire that electrically connects the wiring portion and the semiconductor element;
The semiconductor device, wherein the insulating base is made of ceramic, and the frame is made of a resin material.   The semiconductor device according to claim 1, wherein the semiconductor element is an optical element, and the protective body is made of a translucent member.   The semiconductor device according to claim 2, wherein the semiconductor element is a solid-state imaging element.   The semiconductor device according to claim 1, wherein the frame body is formed by direct coating on the insulating substrate.

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