JP2010251527A - Electronic component, and method of manufacturing electronic component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component of high quality which does not have a semiconductor element damaged when made thin, and to provide a method of manufacturing the same. <P>SOLUTION: While the semiconductor element 104 is pressed and heated through a metal frame 306 to join bumps 105 on the semiconductor element 104 to substrate electrodes 102 on a circuit board 101 by a thermosetting resin film 301, the metal frame 306 is bonded with the same thermosetting resin film 301 and solidification is carried out. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an electronic component in which a semiconductor element is flip-chip mounted on a circuit board and a manufacturing method thereof.

  With recent downsizing and weight reduction of portable information terminals, electronic components are becoming denser, smaller, and lighter, so that CSP (Chip Sized Package) and MCM (Multi Chip Module) by flip chip connection are required. .

  FIG. 10 is a sectional view showing the flip chip mounting method described in Patent Document 1. In FIG. Substrate electrodes 102 and wirings 103 are formed on the surface of the circuit board 101. The semiconductor element 104 mounted on the circuit board 101 has bumps 105 formed on the surface facing the circuit board 101.

  The substrate electrode 102 of the circuit board 101 and the bumps 105 of the semiconductor element 104 are aligned, and the semiconductor element 104 is pressed and heated on the circuit board 101 by the bonding tool 106 and mounted. At this time, there is a method of interposing an anisotropic conductive film 107 as a method of electrically connecting the substrate electrode 102 and the bump 105.

  The anisotropic conductive film 107 is a thermosetting or thermoplastic resin film in which fine conductive particles 108 are dispersed, and is softened by being pressed and heated between the semiconductor element 104 and the circuit board 101. It is fluidized and spreads over the entire surface of the semiconductor element 104 to be bonded and solidified with the circuit board 101. In addition, conductive particles 108 are sandwiched between the bumps 105 of the semiconductor element 104 and the substrate electrodes 102 of the circuit board 101 to obtain electrical connection.

  In order to prevent the anisotropic conductive film 107 from adhering to the bonding tool 106, for example, a resin sheet-like member 109 using a fluorine-based resin is sandwiched between the bonding tool 106 and the semiconductor element 104, and pressure and heating are performed. I do.

JP 2001-127105 A

  In this way, when the resin sheet-like member 109 is sandwiched between the bonding tool 106 and the semiconductor element 104 and pressed and heated, the portion on the semiconductor element 104 where the bump 105 is disposed and the bump 105 are not disposed. As shown in FIG. 11, there is a difference in the deformation of the resin sheet-like member 109. The elastic modulus of the resin sheet-like member 109 is 1 GPa or less.

  That is, the deformation of the resin sheet-like member 109 in the portion where the bump 105 is arranged is larger than the deformation of the resin sheet-like member 109 in the portion where the bump 105 is not arranged. As a result, the phenomenon of being bent greatly occurs.

  In this case, particularly when the semiconductor element 104 is thinned, there is a problem that stress at the time of pressing is concentrated near the bump 105 and the semiconductor element 104 is damaged. Furthermore, the semiconductor element 104 may be destroyed by the silica 110 in the resin of the anisotropic conductive film 107.

  An object of the present invention is to solve the above-described conventional problems, and in particular, to provide a high-quality electronic component that does not damage a semiconductor element with respect to the thinning of the semiconductor element and a method for manufacturing the same.

  According to a first aspect of the present invention, there is provided an electronic component comprising: a semiconductor element having a bump on a main surface; a circuit board having a substrate electrode in contact with the bump of the semiconductor element; and the semiconductor element and the circuit board. A thermosetting resin located between and a material that is hard, and abuts directly or via an adhesive layer on a surface opposite to the main surface of the semiconductor element, and at least the semiconductor element of the outer peripheral portion A portion corresponding to a side on which the bump is formed has a frame that is adjacent to the circuit board side and is bonded to the circuit board by the thermosetting resin.

According to a second aspect of the present invention, in the electronic component according to the first aspect, the frame has a concave shape including the semiconductor element therein.
According to a third aspect of the present invention, in the electronic component according to the first aspect, the frame is formed by bending a metal plate with a notch.

  According to a fourth aspect of the present invention, in the electronic component according to the second or third aspect, the frame is formed with a flange extending along the mounting surface of the circuit board in the vicinity of the circuit board. It is characterized by.

  According to a fifth aspect of the present invention, there is provided a method of manufacturing an electronic component comprising: supplying a thermosetting resin to a circuit board; and positioning the semiconductor element so that bumps on the semiconductor element match a substrate electrode on the circuit board. The step of mounting on the circuit board through the thermosetting resin, the step of mounting a frame having a shape covering the semiconductor element on the semiconductor element, and pressurizing the frame against the circuit board And heating and bonding the bumps to the circuit board in an electrically connected state, and bonding and fixing the frame to the circuit board with the thermosetting resin.

  According to a sixth aspect of the present invention, there is provided a method for manufacturing an electronic component, comprising: supplying a first thermosetting resin to a circuit board; and bumps on the semiconductor element are aligned with substrate electrodes on the circuit board. A step of mounting on the circuit board through the thermosetting adhesion in a positioning state; a step of supplying a second thermosetting resin on the semiconductor element; and a hard plate having a size covering the semiconductor element. A step of mounting via the second thermosetting resin, and a step of heating while pressing the hard plate against the circuit board by covering the semiconductor element with a pressing jig having a recess. At the same time, the bumps are crimped to the circuit board in an electrically connected state, and at the same time, the thermosetting resin on the semiconductor element is thermoset, and at the same time, the hard plate is changed to a shape that covers the semiconductor element. Is allowed while, adhered and fixed the rigid plate to the circuit board by the thermosetting resin.

  According to this configuration, it is possible to provide a high-quality electronic component that does not damage the semiconductor element with high production as the semiconductor element becomes thinner.

Explanatory drawing of the manufacturing process of the electronic component of Embodiment 1 of this invention Illustration of the stud bump formation process Enlarged perspective view of the completed electronic component of the same embodiment Sectional view of the completed electronic component of the same embodiment Sectional drawing of the electronic component of another example of the same embodiment Explanatory drawing of the manufacturing process of the electronic component of Embodiment 2 of this invention Sectional view of the completed electronic component of the same embodiment Plan view of metal plate used in the same embodiment The top view of Embodiment 1, 2 of this invention and the top view of another example Cross-sectional view of conventional manufacturing process Illustration of the conventional example

Hereinafter, each embodiment of the present invention will be described with reference to FIGS.
(Embodiment 1)
A method for manufacturing an electronic component according to Embodiment 1 of the present invention and the structure of the electronic component manufactured by the method will be described with reference to FIGS.

  2 is a cross-sectional view showing a bump forming method using wire bonding technology in the order of steps, FIG. 1 is a cross-sectional view showing a method of manufacturing an electronic component in the order of steps, and FIG. 4 is an electronic device manufactured according to FIG. Sectional drawing of components is shown.

  The bump forming method shown in FIG. 2 uses wire bonding technology to form an Au ball 202 at the tip of the Au wire 201 using spark discharge (FIG. 2A), and a capillary 203 that holds the Au ball 202 is formed. Then, the Au ball 202 comes into contact with the pad electrode 204 of the semiconductor element 104 heated by the heating stage, and thereafter, pressure and ultrasonic waves are applied to complete the bonding (FIG. 2B). Thereafter, after a certain amount of Au wire 201 is drawn out, when the Au wire 201 is clamped and the capillary 203 is raised, the Au wire 201 is torn off and the formation of the bump 105 is completed (FIG. 2C). The material of the pad electrode 204 is generally an Al compound mainly containing Al and containing Si or Cu.

  When the pitch between the pad electrodes 204 of the semiconductor element 104 is 120 μm, the diameter of the bump 105 is 85 μm, and the height of the pedestal of the bump 105 is 25 μm. These shapes can be adjusted to about ± 3 to 10 μm depending on the material of the bump 105, the formation condition of the bump 105, and the bonding condition.

On the substrate electrode 102 of the circuit board 101 shown in FIG. 1 (a), in FIG. 1 (b), a thermosetting resin film 301 cut to a size about 1 mm larger than the size of the semiconductor element 104 is disposed. The thermosetting resin film 301 is pasted by the pasting tool 303. The affixing tool 303 is heated to 70 to 120 ° C. by a built-in heater 302 and a thermosetting resin film 301 is affixed on the substrate electrode 102 of the circuit board 101 at a pressure of about 5 to 10 kgf / cm ^2. .

  In order to prevent the thermosetting resin film 301 from sticking to the attaching tool 303 when the thermosetting resin film 301 is attached by the attaching tool 303, a separator 304 is attached to the thermosetting resin film 301. In this state, the separator 304 is peeled off from the thermosetting resin film 301 after the thermosetting resin film 301 is attached to the circuit board 101.

  The thermosetting resin film 301 has an insulating property containing an inorganic filler such as silica (for example, an epoxy resin, a phenol resin, a polyimide, etc.), or has an insulating property not containing any inorganic filler (for example, An epoxy resin, a phenol resin, a polyimide, etc.) are preferable, and it is preferable to have heat resistance that can withstand high temperatures in a reflow process in a later step (for example, heat resistance that can withstand 10 seconds at 260 ° C.).

  In FIG. 1C, the semiconductor element 104 in which the bump 105 is formed on the pad electrode 204 of the semiconductor element 104 by the process of FIG. 2 is attached to the thermosetting resin film 301 at the position of the bump 105. The circuit board 101 is positioned so as to correspond to the position of the substrate electrode 102, and is pressed and mounted on the circuit board 101 by the suction tool 305. At this time, the temperature of the adsorption tool 305 is substantially the same as that in the environment, and is equal to or lower than the reaction start temperature at which the thermosetting resin film 301 starts the thermosetting reaction.

  In FIG. 1D, the metal frame 306 as a frame is held by the suction tool 307, aligned so as to cover the semiconductor element 104, and mounted on the semiconductor element 104. The elastic modulus of the resin sheet-like member 109 used in the conventional example is 1 GPa or less, whereas the metal frame 306 has a higher elastic modulus, specifically, 3 GPa or more is preferable. The metal frame 306 is substantially the same size as the semiconductor element, and preferably has a shape in which a recess is formed in advance so that the semiconductor element 104 can be covered. When the outer dimension of the semiconductor element 104 is 6 mm × 6 mm, the inner diameter dimension of the recess is preferably about 6.1 mm × 6.1 mm to 6.2 mm × 6.2 mm in consideration of the dimensional tolerance of the semiconductor element 104. The thickness is preferably about 0.1 mm to 0.35 mm in order to maintain a three-dimensional shape. The material is preferably a metal that is not deformed by pressing or heating in the next step, such as SUS, white, phosphor bronze, or the like. The temperature of the adsorption tool 307 is approximately the same temperature as the environment, and is equal to or lower than the reaction start temperature at which the thermosetting resin film 301 starts the thermosetting reaction.

  1E and 1F, the metal frame 306 is pressed and heated by the crimping tool 309 heated by the heater 308, whereby the aligned semiconductor element 104 is also pressed and heated to complete the bonding. To do.

  At this time, the bump 105 is pressed while being deformed on the substrate electrode 102 of the circuit board 101 by being pressed. At this time, the pressure is required to be at least 20 gf, and a load that does not damage the semiconductor element 104, the bump 105, and the circuit board 101 is applied. At this time, heat of about 170 ° C. to 250 ° C. is applied to the thermosetting resin film 301 between the semiconductor element 104 and the circuit board 101 by the heated crimping tool 309 for about several seconds to 30 seconds. The thermosetting resin film 301 is thermally cured, and the semiconductor element 104 is fixed on the circuit board 101 by the cured thermosetting resin 310. At the same time, the metal frame 306 is also fixed on the circuit board 101 by the thermosetting resin 310. The structure of the electronic component obtained by the above steps is shown in FIGS.

Here, the case where a film-like resin is used as the thermosetting resin 310 has been described, but the thermosetting resin 310 may be in a liquid form.
Further, the shape of the metal frame 306 may be as shown in FIG. That is, the collar portion 306 a is formed on the metal frame 306. At this time, since the bonding area between the metal frame 306 and the circuit board 101 is further increased, the metal frame 306 can be bonded to the circuit board 101 more firmly.

  According to such a configuration, the semiconductor element 104 is pressed against the circuit board 101 via the hard metal frame 306 as compared with the resin sheet-like member 109 that has been conventionally used. Since stress is not concentrated, it is possible to mount the thin semiconductor element 104 with high quality.

  Further, since the semiconductor element 101 is covered with the metal frame 306, it has a shielding effect. Moreover, since it does not pressurize partially, the semiconductor element 101 is not destroyed by a filler such as silica in the resin.

(Embodiment 2)
A method for manufacturing an electronic component and a structure of the electronic component manufactured by the method according to Embodiment 2 of the present invention will be described with reference to FIGS.

FIG. 6 is a cross-sectional view showing a method of manufacturing an electronic component in the order of steps, and FIG. 7 is a cross-sectional view of the electronic component manufactured according to FIG.
Since the method of forming the bump 105 on the semiconductor element 104 using the wire bonding technique is the same as that in FIG. 2 in Embodiment Mode 1, description thereof is omitted here.

In FIG. 6A and FIG. 6B, a thermosetting resin film 301 cut to a size approximately 1 mm larger than the size of the semiconductor element 104 is disposed on the substrate electrode 102 of the circuit substrate 101, and a built-in heater. The thermosetting resin film 301 is pasted on the substrate electrode 102 of the circuit board 101 at a pressure of about 5 to 10 kgf / cm ² by the pasting tool 303 heated to 70 to 120 ° C. in 302. Then, the preparation process of the circuit board 101 is completed by removing the separator 304 detachably disposed on the affixing tool 303 side of the thermosetting resin film 301.

  The separator 304 is for preventing the thermosetting resin film 301 from sticking to the sticking tool 303. Here, the thermosetting resin film 301 has an insulating property containing an inorganic filler such as silica (for example, an epoxy resin, a phenol resin, a polyimide, etc.), or has an insulating property not containing any inorganic filler. (For example, epoxy resin, phenol resin, polyimide, etc.) are preferable and have heat resistance that can withstand high temperatures in a reflow process in a later process (for example, heat resistance that can withstand 10 seconds in an environment of 260 ° C.). Is preferred.

  6C, the semiconductor element 104 in which the bump 105 is formed on the pad electrode 204 of the semiconductor element 104 by the process of FIG. 2 is attached to the thermosetting resin film 301 at the position of the bump 105. The circuit board 101 is positioned so as to correspond to the position of the substrate electrode 102, and is pressed and mounted on the circuit board 101 by the suction tool 305. At this time, the temperature of the adsorption tool 305 is substantially the same as that in the environment, and is equal to or lower than the reaction start temperature at which the thermosetting resin film 301 starts the thermosetting reaction.

  In FIG. 6D, a thermosetting resin 402 as an adhesive layer for fixing the metal plate 401 as a hard plate on the semiconductor element 104 is supplied. Here, the metal plate 401 is harder than the conventionally used resin sheet member 109.

  In FIG. 6 (e), the metal plate 401, which is harder than the conventionally used resin sheet-like member 109, is aligned so as to cover the semiconductor element 104, and the semiconductor element 104 is placed on the semiconductor element 104 by the suction tool 307. To be installed. The metal plate 401 preferably has a size obtained by adding the size of the semiconductor element 104 to twice the thickness of the semiconductor element 104 and the size of the gap between the main surface of the semiconductor element 104 and the circuit board 101 when connected. The shape is preferably a cross as shown in FIG. The metal plate 401 is previously provided with a notch 401a at a position substantially the same size as the semiconductor element 104. When the outer dimensions of the semiconductor element 104 are 6 mm × 6 mm and the thickness of the semiconductor element 104 is 0.1 mm, the outer dimensions of the metal plate 401 are 6.2 mm × 6.2 mm to 6. mm in consideration of the dimensional tolerance of the semiconductor element 104. About 3 mm x 6.3 mm is preferable. The thickness is preferably about 0.02 mm to 0.3 mm so that the flat plate shape can be easily bent in the pressing and heating process in the subsequent process. For the metal plate 401 having a thickness of 0.1 mm or more, it is preferable to provide a notch with a size of 6.1 mm × 6.1 mm so that the metal plate 401 can be easily bent in the subsequent pressing and heating processes. The material is preferably a metal that does not deform with respect to pressing and heating in the next step, such as SUS, white, phosphor bronze, and aluminum. Specifically, the thickness in the case of aluminum was 0.02 mm, and the thickness in the case of Western white was 0.3 mm.

In FIG. 6 (f), the metal plate 401 is pressed and heated by the crimping tool 404 heated by the heater 403.
At this time, the crimping tool 404 has a concave shape, and the internal dimension of the concave part is substantially the same as the dimension obtained by adding twice the thickness of the metal plate 401 to the size of the semiconductor element 104. The depth is substantially the same as the height from the upper surface of the circuit board 101 after connection to the upper surface of the metal plate 401. When the outer dimensions of the semiconductor element 104 are 6 mm × 6 mm and the thickness of the semiconductor element 104 is 0.1 mm, the outer dimensions of the metal plate 401 are 6.2 mm × 6.2 mm to 6. mm in consideration of the dimensional tolerance of the semiconductor element 104. About 3 mm x 6.3 mm is preferable. The internal dimension of the recess of the crimping tool 404 is preferably about 6.2 mm × 6.2 mm to 6.3 mm × 6.3 mm in consideration of the dimensional tolerance of the semiconductor element 104. The depth of the recess is preferably about 0.2 mm to 0.25 mm.

  By pressing and heating the metal plate 401 aligned by the crimping tool 404, the four corners of the metal plate 401 are first bent at the side of the circuit board 101 by the notches 401a, and the semiconductor element 104 is also pressed and heated. The joining is completed as shown in FIG.

  At this time, the bump 105 is pressed while being deformed on the substrate electrode 102 of the circuit board 101 by being pressed. At this time, the pressure is required to be at least 20 gf, and a load that does not damage the semiconductor element 104, the bump 105, and the circuit board 101 is applied. At this time, heat of about 170 ° C. to 250 ° C. is applied to the thermosetting resin film 301 between the semiconductor element 104 and the circuit board 101 by the heated crimping tool 309 for about several seconds to 30 seconds. The thermosetting resin film 301 is thermally cured, and the semiconductor element 104 is fixed on the circuit board 101 by the cured thermosetting resin 310. At the same time, the metal plate 401 is fixed on the circuit board 101 by the thermosetting resin 310 protruding from the outer periphery of the semiconductor element 104 while being bent at a notch provided in advance.

  According to such a configuration, stress is not concentrated in the vicinity of the bump 105 of the semiconductor element 104, so that it can be mounted on the thin semiconductor element 104 with high quality. In addition, an expensive three-dimensional metal frame is not required in advance, and an inexpensive flat metal plate by a punching method using a mold or the like can be used. Therefore, an electronic component can be manufactured at a low cost.

  In each of the embodiments described above, the frames 61, 62, 63, 64 are formed at the four corners of the frame formed by bending the metal frame 306 or the metal plate 401 so as to form a recess as shown in FIG. However, as shown in FIG. 9B, when the bump 105 is formed along two opposing sides of the semiconductor element 104, corresponding to the side where the bump 105 is formed, By forming the walls 61 and 63 in a frame formed by bending the metal frame 306 or the metal plate 401, substantially the same effect can be expected.

  In the second embodiment, the thermosetting resin 402 is supplied as an adhesive layer in order to fix the metal plate 401 on the semiconductor element 104. However, the thermosetting resin 402 may be provided even when the thermosetting resin 402 is not provided. it can.

  The present invention can contribute to improving the reliability of various electronic components mounted with a thin semiconductor element.

DESCRIPTION OF SYMBOLS 101 Circuit board 102 Board electrode 104 Semiconductor element 105 Bump 301 Thermosetting resin film 302 Heater 303 Pasting tool 304 Separator 305 Adsorption tool 306 Metal frame (frame)
306a Hook 307 Adsorption tool 308 Heater 309 Crimping tool 310 Thermosetting resin film thermoset 401 Metal plate (hard plate)
402 Thermosetting resin 403 Heater 404 Crimping tool having recess

Claims (6)

A semiconductor element having bumps on the main surface;
A circuit board having a substrate electrode brought into contact with and in contact with the bump of the semiconductor element;
A thermosetting resin located between the semiconductor element and the circuit board;
A portion made of a hard material and in contact with a surface opposite to the main surface of the semiconductor element directly or via an adhesive layer, corresponding to at least a side of the outer peripheral portion where the bump of the semiconductor element is formed An electronic component having a frame adhered to the circuit board by the thermosetting resin adjacent to the circuit board side. The electronic component according to claim 1, wherein the frame has a concave shape including the semiconductor element therein. The electronic component according to claim 1, wherein the frame is a metal plate bent by a notch. 4. The electronic component according to claim 2, wherein the frame is formed with a flange extending along the mounting surface of the circuit board in the vicinity of the circuit board. Supplying a thermosetting resin to the circuit board;
Mounting a semiconductor element on the circuit board through the thermosetting resin in a positioning state in which bumps on the semiconductor element match a substrate electrode on the circuit board;
Mounting a frame having a shape covering the semiconductor element on the semiconductor element;
Heating the frame while pressing it in a direction of pressing the frame against the circuit board, and crimping the bumps to the circuit board in an electrically connected state and using the thermosetting resin to attach the frame to the circuit board. Manufacturing method of electronic parts to be bonded and fixed. Supplying a first thermosetting resin to the circuit board;
Mounting a semiconductor element on the circuit board through the thermosetting adhesion in a positioning state in which bumps on the semiconductor element match a substrate electrode on the circuit board;
Supplying a second thermosetting resin on the semiconductor element;
Mounting a hard plate of a size covering the semiconductor element on the semiconductor element via the second thermosetting resin;
A step of covering the semiconductor element with a pressurizing jig having a recess and heating while pressing in the direction of pressing the hard plate against the circuit board,
At the same time that the bumps are crimped to the circuit board in an electrically connected state, the thermosetting resin on the semiconductor element is thermally cured, and at the same time, the hard plate is deformed into a shape covered with the semiconductor element, A method of manufacturing an electronic component, wherein the hard plate is bonded and fixed to the circuit board with the thermosetting resin.

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