JP2010251464A - Vacuum treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To arrange a calibrating second pressure gage in the same environment in a vacuum treatment chamber in order to keep a pressure zone in a normal condition in film formation treatment, and to calibrate a controlling first pressure gage with a pressure value in an actual process. <P>SOLUTION: In the vacuum treatment chamber 100, the calibrating second pressure gage 200 is installed at a position where the distance to the controlling first pressure gage 107 is set equal to that to an exhaust port 103; a cutoff valve 201 is installed between the second pressure gage 200 and the vacuum treatment chamber 100; and the second pressure gage 200 is prevented from being exposed to an atmosphere of a process gas. The process gas is exhausted from the inside of the vacuum processing chamber 100 at optional timing after an actual process, and replaced by an inert gas; thereafter the cutoff valve 201 between the second pressure gage 200 and the vacuum treatment chamber 100 is opened, and controlled at process pressure by the second pressure gage 200 using the inert gas; and thereafter the first pressure gage 107 is calibrated to be set at the same value as that of the second pressure gage 200. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a vacuum processing apparatus for manufacturing semiconductor products, in particular, pressure control using a capacitance manometer. In particular, it relates to calibration of pressure gauges.

  In a semiconductor product manufacturing process, a pressure gauge is used to control a pressure in a vacuum processing chamber in a vacuum processing apparatus that supplies a reaction gas and processes a substrate in the vacuum processing chamber. Such a pressure gauge is disposed in the vacuum processing chamber, and is used to control the vacuum processing chamber to the process pressure while supplying the process gas into the vacuum processing chamber. A capacitance manometer is generally used as the pressure gauge.

  In the plasma CVD apparatus, a process gas is used to generate a nitride film on the surface of a processing object such as a semiconductor wafer by plasma discharge in a vacuum processing chamber.

  In the plasma CVD apparatus, a reaction product generated during the film forming process is deposited in the vacuum processing chamber and is also adhered to the pressure gauge. The measured value of the pressure gauge is displaced due to the deposited deposit, but the pressure gauge display itself shows the same value as the set value, and the film formation process is performed in a state where the true pressure cannot be grasped .

  An abnormality is discovered during the characteristic evaluation of the product substrate performed after the film formation process, and the abnormality of the pressure gauge is confirmed.

  If any abnormality is confirmed, the subsequent film formation process is interrupted, the pressure gauge is calibrated using a comparative pressure gauge installed in a vacuum chamber different from the vacuum processing chamber, and then product formation is completed. Membrane processing is resumed.

JP 2004-273682 A

The plasma CVD apparatus described here is a parallel plate type single wafer plasma CVD apparatus. Process gases, SiH ₄ , NH ₃ , and N _2, are supplied from the upper electrode, and the vacuum processing chamber is controlled to the set pressure, and RF plasma discharge is performed on the product substrate installed on the lower electrode. A nitride film is formed. When the measured value of the pressure gauge (in this case, the capacitance manometer) that controls the inside of the vacuum processing chamber during film formation is abnormal, but shows a normal value on the display, it is a characteristic inspection that is performed after product processing. The film stress is changed, and the pressure gauge is identified as abnormal by checking the equipment condition.

  FIG. 2 is a graph showing the relationship between the deposition pressure of the plasma nitride film and the film stress. The film stress to maintain the quality of the product needs to be tensile stress, because the nitride film has a defect that peels off during the manufacturing process of the product due to the film stress with the base on which the nitride film is formed In the graph shown in FIG. 2, 10 MPa or more is required. In the graph shown in FIG. 2, the pressure band for maintaining the film stress is in the range of ± 10% with respect to the set center value of 400 Pa.

  When the pressure gauge is calibrated when the first pressure gauge for control is abnormal, in the prior art, the second pressure gauge for calibration is installed on the spare chamber side different from the vacuum processing chamber, and the reaction chamber With the gate valve open between the pressure chamber and the spare chamber, the measured value of the pressure gauge is compared in the exhaust state in which gas is not supplied instead of the process pressure, and the zero point of the pressure gauge is adjusted.

  Therefore, zero point calibration at high vacuum is possible, but with this calibration method, the pressure value of the set pressure at the actual process is not calibrated, and pressure control during product processing is stably performed. It is impossible.

  Therefore, in the present invention, a second pressure gauge for calibration is arranged in the same environment in the vacuum processing chamber in order to maintain the pressure zone during the film forming process in a normal state, and the first pressure for control is provided. An object of the present invention is to provide a vacuum processing apparatus capable of calibrating a meter with a pressure value in an actual process.

  In order to solve the above problems, a vacuum processing apparatus of the present invention includes a vacuum processing chamber, an exhaust device that exhausts the vacuum processing chamber, a gas introduction mechanism that introduces gas into the vacuum processing chamber, and a pressure in the vacuum processing chamber. A first pressure gauge to be measured, and at least one second pressure gauge that is mounted at a position that is the same as the mounting position of the first pressure gauge with respect to the pressure measurement value in the vacuum processing chamber and that measures the pressure in the vacuum processing chamber. A pressure gauge, a first shielding mechanism that shields the atmosphere between the vacuum processing chamber and the second pressure gauge, and a pressure control device that controls the pressure in the vacuum processing apparatus are provided.

  According to this configuration, since the second pressure gauge for calibration is attached to the vacuum processing chamber, the second pressure gauge can be arranged in the same environment as the first pressure gauge with respect to the vacuum processing chamber. The first pressure gauge can be calibrated based on the pressure value in the actual process. In addition, since the second pressure gauge for calibration is attached at a position where the same conditions as the position of the first pressure gauge for pressure control are attached with respect to the pressure measurement value in the vacuum processing chamber, the first and second pressures The error of the pressure measurement value due to the difference in the gauge mounting position can be eliminated, and the first pressure gauge can be accurately calibrated based on the pressure value in the actual process. In addition, since the first shielding mechanism is provided between the second pressure gauge and the vacuum processing chamber, the atmosphere between the second pressure gauge and the vacuum processing chamber is changed to the first shielding mechanism during the actual process. By shielding by the above, it is possible to prevent the second pressure gauge from being misaligned due to film deposition by an actual process, and the first pressure gauge can be accurately calibrated.

  In the vacuum processing apparatus having the above configuration, it is preferable to provide a second shielding mechanism that shields the atmosphere between the vacuum processing chamber and the first pressure gauge.

  According to this configuration, since the second shielding mechanism that shields the atmosphere between the vacuum processing chamber and the first pressure gauge is provided, the first pressure gauge cannot be calibrated and replaced. Sometimes the second shielding mechanism is closed, so that the first pressure gauge can be replaced while the vacuum processing chamber is kept in a vacuum state, and the actual process starts immediately after the first pressure gauge is replaced. Can do.

  In the vacuum processing apparatus having the above-described configuration, the second pressure gauge has the same distance from the exhaust port for exhausting the vacuum processing chamber by the exhaust device as the distance from the exhaust port to the first pressure gauge. It is preferable to be provided at any position.

  According to this configuration, the second pressure gauge is placed at an arbitrary position where the distance from the exhaust port for exhausting the vacuum processing chamber by the exhaust device is the same as the distance from the exhaust port to the first pressure gauge. Since it is provided, it is possible to eliminate errors in pressure measurement values due to differences in the mounting positions of the first and second pressure gauges caused by the pressure gradient generated in the vacuum processing chamber during exhaust, and with high accuracy. Calibration can be performed.

  In the vacuum processing apparatus configured as described above, the first shielding mechanism shields the atmosphere between the vacuum processing chamber and the second pressure gauge during an actual process, and the vacuum processing chamber and the second pressure gauge during calibration. The gas introduction mechanism preferably introduces a process gas during an actual process and introduces an inert gas during calibration.

  According to this configuration, since the first shielding mechanism is provided between the second pressure gauge and the vacuum processing chamber, the atmosphere between the second pressure gauge and the vacuum processing chamber is reduced during the actual process. By shielding with the first shielding mechanism, it is possible to prevent the second pressure gauge from being exposed to the atmosphere of the process gas, and to prevent the second pressure gauge from being misaligned due to film deposition by an actual process. The first pressure gauge can be calibrated with high accuracy. In addition, there is no film deposition at the time of calibration, the second pressure gauge can be prevented from being misaligned, and the first pressure gauge can be accurately calibrated.

  In the vacuum processing apparatus configured as described above, the pressure control device controls the pressure in the vacuum processing chamber based on the pressure measurement result by the first pressure gauge during the actual process, and the pressure by the second pressure gauge during calibration. It is preferable to control the pressure in the vacuum processing apparatus based on the measurement result and calibrate the measured value of the first pressure gauge based on the measured value of the second pressure gauge.

  According to this configuration, since the pressure is controlled using the second pressure gauge without any error at the time of calibration, the pressure in the vacuum processing chamber can be accurately controlled to the pressure value in the actual process. The first pressure gauge can be accurately calibrated under the pressure in the actual process by the accurate pressure measurement value by the pressure gauge.

  Moreover, in the vacuum processing apparatus having the above-described configuration, an inert gas is introduced into the vacuum processing chamber, and pressure control in at least two different pressure zones centering on the actual process pressure is performed at any timing when the product is not processed. When the measurement value of the first pressure gauge is different from the measurement value of the second pressure gauge, it is preferable to have a function of calibrating the first pressure gauge in the actual process area.

  According to this configuration, the first pressure gauge is calibrated directly under the pressure in the actual process area, so that pressure control during product processing is stable, unlike indirect calibration by zero point calibration during high vacuum. Can be implemented.

  In the vacuum processing apparatus having the above-described configuration, the second pressure gauge is always inactive gas without being separated from the vacuum processing chamber by the first shielding mechanism during the actual process when the process gas is introduced. It is preferable that the calibrated state is maintained.

  According to this configuration, the second pressure gauge is exposed to the atmosphere of the process gas by shielding the atmosphere between the second pressure gauge and the vacuum processing chamber by the first shielding mechanism during the actual process. The second pressure gauge can be prevented from being misaligned due to film deposition by an actual process, and the first pressure gauge can be accurately calibrated.

  In the vacuum processing apparatus of the present invention, for example, a single wafer plasma CVD apparatus used for plasma nitride film processing, it is possible to accurately calibrate a control pressure gauge with a pressure value controlled during an actual process. It is possible to control the pressure control during film processing with a pressure gauge calibrated with the pressure value that is always controlled during the actual process, and the film stress generated due to fluctuations in film formation pressure due to abnormal pressure gauges It is possible to prevent film peeling from the base when shifting to a value outside the standard, and it is possible to prevent occurrence of defects in the semiconductor product.

It is a schematic diagram which shows the structure of the plasma processing apparatus of the Example of this invention. It is a graph which shows the relationship between the film-forming pressure of a nitride film, and film | membrane stress.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 shows a schematic diagram of a plasma processing apparatus according to an embodiment of the present invention. In FIG. 1, reference numeral 100 denotes a vacuum processing chamber. Reference numeral 101 denotes a substrate stage that is provided in the vacuum processing chamber 100 and also serves as a lower electrode. Reference numeral 102 denotes a gas inlet provided in the vacuum processing chamber 100. Reference numeral 103 denotes an exhaust port provided in the vacuum processing chamber 100. Reference numeral 104 denotes a pressure control device coupled to the exhaust port of the vacuum processing apparatus 100. Reference numeral 105 denotes a product substrate placed on the substrate stage 101. Reference numeral 106 denotes a Pirani vacuum gauge provided in the vacuum processing chamber 100. Reference numeral 107 denotes a first pressure gauge for pressure control provided in the vacuum processing chamber 100. Reference numeral 108 denotes a shielding valve as a shielding mechanism provided between the vacuum processing chamber 100 and the first pressure gauge 107. Reference numeral 109 denotes an upper electrode provided in the vacuum processing chamber 100. The pressure control device 104 is connected to an exhaust device (not shown) for exhausting air from the exhaust port 103.

  Reference numeral 200 denotes a second pressure gauge for pressure calibration provided in the vacuum processing chamber 100. Reference numeral 201 denotes a shielding valve as a shielding mechanism provided between the vacuum processing chamber 100 and the second pressure gauge 201. Reference numeral 202 denotes a data calculation unit that calculates a difference between pressure measurement values of the first and second pressure gauges 107 and 200. Reference numeral 203 denotes an apparatus instruction unit that issues a configuration or replacement instruction based on an output signal from the data calculation unit 202.

  Reference numeral 300 denotes a first pressure gauge data transmission unit for control that transmits pressure measurement data of the first pressure gauge for control to the data calculation unit 202. Reference numeral 301 denotes a second pressure gauge data transmission unit for calibration that transmits the pressure measurement data of the second pressure gauge for calibration to the data calculation unit 202. Reference numeral 302 denotes a pressure gauge calibration and replacement instruction transmission unit that transmits a pressure gauge calibration and replacement instruction signal from the data calculation unit 202 to the apparatus instruction unit 203.

  Next, a pressure gauge calibration procedure in this vacuum processing apparatus will be described.

  After the product processing in the vacuum processing chamber 100 is completed and the product substrate 105 on the substrate stage 101 is taken out from the vacuum processing chamber 100, the inert gas supplied with the atmosphere in the vacuum processing chamber 100 from the gas inlet 102 Then, the supply of the inert gas is stopped once, and the inside of the vacuum processing chamber 100 is exhausted from the exhaust port 103.

  After confirming that the inside of the vacuum processing chamber 100 has been evacuated to the ultimate vacuum level, the Pirani vacuum gauge 106 opens, and then the shielding valve 201 provided between the second pressure gauge 200 for calibration and the vacuum processing chamber 100 is opened. Then, while introducing an inert gas from the gas inlet 102, the pressure controller 104 instructs the pressure setting during the first film formation. At this time, the pressure control is performed by the pressure control device 104 based on the second pressure gauge 200 for calibration, the pressure value indicated by the second pressure gauge 200 for calibration, and the first pressure gauge 107 for control. Is transmitted to the data calculation unit 202 via the first pressure gauge data transmission unit 300 for control and the second pressure gauge data transmission unit 301 for calibration. Then, the data calculation unit 202 calculates the difference between the transmitted pressure value indicated by the second pressure gauge for calibration 200 and the pressure value indicated by the first pressure gauge for control 107 by calculation. Specifically, based on the pressure value indicated by the second pressure gauge 200 for calibration, the percentage of the pressure value indicated by the first pressure gauge for control is calculated.

  Here, when the difference between the pressure value indicated by the second pressure gauge for calibration 200 and the pressure value indicated by the first pressure gauge for control 107 calculated by the data calculation unit 202 is ± 5% or more Then, after receiving an instruction to calibrate the first pressure gauge 107 for control from the apparatus instruction section 203 via the pressure gauge calibration and replacement instruction transmission section 302, the first pressure gauge 107 for control is adjusted. Then, it is adjusted to the value of the second pressure gauge 200 for calibration. If the above difference is less than ± 5%, the calibration operation is not performed.

  After the adjustment is completed, the supply of the inert gas is temporarily stopped, and the vacuum processing chamber 101 is exhausted from the exhaust port 103 until the degree of vacuum is reached. After the inside of the vacuum processing chamber 100 reaches the ultimate vacuum with the Pirani vacuum gauge 106, an inert gas is supplied again into the vacuum processing chamber 100 from the gas inlet 102, and an instruction to set the pressure during the second film formation is given. I do. Similarly, the pressure control is performed by the pressure control device 104 based on the second pressure gauge 200 for calibration, the pressure value indicated by the second pressure gauge 200 for calibration, and the first pressure gauge 107 for control. Is transmitted to the data calculation unit 202 via the first pressure gauge data transmission unit 300 for control and the second pressure gauge data transmission unit 301 for calibration. Then, the data calculation unit 202 calculates the difference between the transmitted pressure value indicated by the second pressure gauge 200 for calibration and the pressure value indicated by the first pressure gauge 107 for control. Specifically, based on the pressure value indicated by the second pressure gauge 200 for calibration, the percentage of the pressure value indicated by the first pressure gauge for control is calculated.

  Here, when the difference between the pressure value indicated by the second pressure gauge for calibration 200 and the pressure value indicated by the first pressure gauge for control 107 calculated by the data calculation unit 202 is ± 5% or more Then, after receiving an instruction to calibrate the first pressure gauge 107 for control from the apparatus instruction section 203 via the pressure gauge calibration and replacement instruction transmission section 302, the first pressure gauge 107 for control is adjusted. Then, it is adjusted to the value of the second pressure gauge 200 for calibration. If the above difference is less than ± 5%, the calibration operation is not performed. Thereafter, the shielding valve 201 provided between the second pressure gauge 200 for calibration and the vacuum processing chamber 100 is shielded.

  Thereafter, the supply of the inert gas is stopped, and the vacuum processing chamber 100 is evacuated in order to exhaust the inert gas. After the vacuum processing chamber 100 reaches the ultimate vacuum level with the Pirani vacuum gauge 106, processing of the next product is started.

  In the calibration operation, when the difference between the pressure value indicated by the second pressure gauge 200 for calibration and the pressure value indicated by the first pressure gauge 107 for control is ± 5% or more, Adjustment of the first pressure gauge 107 is performed, but if the value of the second pressure gauge 200 for calibration cannot be adjusted, the use of the first pressure gauge 107 for control cannot be continued. The apparatus instruction unit 203 issues an instruction to replace the first pressure gauge 107 for control via the pressure gauge calibration and replacement instruction transmission unit 302. Thereafter, the shielding valve 201 provided between the second pressure gauge 200 for calibration and the vacuum processing chamber 100 is shielded to stop the supply of the inert gas into the vacuum processing chamber 100, and the inside of the vacuum processing chamber 100 is The Pirani vacuum gauge 106 exhausts air from the exhaust port 103 so that the ultimate vacuum is achieved.

  Next, the shielding valve 108 provided between the first pressure gauge 107 for control and the vacuum processing chamber 100 is shielded, the first pressure gauge 107 for control is removed, and a new calibrated first control pressure gauge is removed. After the first pressure gauge 107 is attached, the shielding valve 108 provided between the first pressure gauge 107 for control and the vacuum processing chamber 100 is opened, and the atmosphere is the same as in the vacuum processing chamber 100.

  By this series of operations, the first pressure gauge 107 for control in the vacuum processing chamber 100 can control the pressure value set during the actual process within ± 5%.

  This can maintain within ± 10% of the film forming pressure zone in which film peeling does not occur as shown in FIG. 2, and the product characteristics can be kept stable.

  The pressure gauge is preferably calibrated every time at the end of processing of one product in a single wafer processing vacuum processing apparatus, but at the end of product processing in lot units or at any timing after the end of product processing. It goes without saying that the same effect can be obtained even if it is carried out.

  In addition, although the plasma nitride film processing has been described in the first embodiment, it goes without saying that the same effect can be obtained even if it is used in another plasma film forming apparatus or a plasma etching apparatus.

  As described above, according to the vacuum processing apparatus of this embodiment, since the second pressure gauge 200 for calibration is attached to the vacuum processing chamber 100, the first pressure gauge 107 and the vacuum processing chamber 100 are The second pressure gauge 200 can be arranged under the same environment, and the first pressure gauge 107 can be calibrated based on the pressure value in the actual process. In addition, since the second pressure gauge 200 for calibration is attached at a position that satisfies the same conditions as the attachment position of the first pressure gauge 107 for pressure control in the vacuum processing chamber 100 with respect to the pressure measurement value, The error of the pressure measurement value due to the difference in the mounting positions of the two pressure gauges 107 and 200 can be eliminated, and the first pressure gauge 107 can be accurately calibrated based on the pressure value in the actual process. Further, since the shielding valve 201 is provided between the second pressure gauge 200 and the vacuum processing chamber 100, the atmosphere between the second pressure gauge 200 and the vacuum processing chamber 100 is shielded during the actual process. The second pressure gauge can be prevented from being exposed to the atmosphere of the process gas, and the second pressure gauge 200 can be prevented from being misaligned due to film deposition by an actual process. The pressure gauge 107 can be calibrated with high accuracy.

  In addition, since the shielding valve 108 for shielding the atmosphere between the vacuum processing chamber 100 and the control first pressure gauge 107 is provided, the first pressure gauge 107 cannot be calibrated and replaced. Sometimes, by closing the shielding valve 107, the first pressure gauge 107 can be replaced while the vacuum processing chamber 100 is kept in a vacuum state, and the actual process is started immediately after the replacement of the first pressure gauge 107. be able to.

  Furthermore, the distance from the exhaust port 103 for exhausting the inside of the vacuum processing chamber 100 by the exhaust device from the second pressure gauge 200 is the same as the distance from the exhaust port 103 to the first pressure gauge 107. Since it is provided at the position, the error of the pressure measurement value due to the difference in the mounting position of the first and second pressure gauges 107 and 200 caused by the pressure gradient generated in the vacuum processing chamber 100 during exhaust is eliminated. Can be calibrated with high accuracy.

  Further, according to this configuration, since the shielding valve 201 is provided between the second pressure gauge 200 and the vacuum processing chamber 100, the second pressure gauge 200 and the vacuum processing chamber 100 are disposed between the second pressure gauge 200 and the vacuum processing chamber 100 during an actual process. The second pressure gauge 200 can be prevented from being exposed to the atmosphere of the process gas by shielding the atmosphere of the second pressure gauge by the shielding valve 201, and the second pressure gauge 200 can be prevented from being distorted due to film deposition by an actual process. The first pressure gauge 107 can be calibrated with high accuracy.

  Further, there is no film deposition at the time of calibration, the second pressure gauge 200 can be prevented from being distorted, and the first pressure gauge 107 can be calibrated with high accuracy.

  Further, since the pressure is controlled using the second pressure gauge 200 without any error during calibration, the pressure in the vacuum processing chamber 100 can be accurately controlled to the pressure value in the actual process, and the second pressure The first pressure gauge 107 can be accurately calibrated under the pressure in the actual process by the accurate pressure measurement value obtained by the gauge 200.

  In addition, since the first pressure gauge 107 is directly calibrated under the pressure in the actual process range, unlike indirect calibration by zero point calibration at high vacuum, stable pressure control during product processing is performed. can do.

  The pressure control method of the present invention is particularly useful as a method for stabilizing quality by being used in semiconductor product manufacturing, particularly in a vacuum processing apparatus that controls a process pressure using a capacitance manometer.

DESCRIPTION OF SYMBOLS 100 Vacuum processing chamber 101 Substrate stage 102 Gas introduction port 103 Exhaust port 104 Pressure control apparatus 105 Product substrate 106 Pirani vacuum gauge 107 Control first pressure gauge 108 Shielding valve 200 Calibration second pressure gauge 201 Shielding valve 202 Data calculation unit 203 Device instruction unit 300 First pressure gauge data transmission unit for control 301 Second pressure gauge data transmission unit for calibration 302 Pressure gauge calibration and exchange instruction transmission unit

Claims (7)

  A vacuum processing chamber; an exhaust device that exhausts the vacuum processing chamber; a gas introduction mechanism that introduces gas into the vacuum processing chamber; a first pressure gauge that measures pressure in the vacuum processing chamber; and the vacuum processing chamber At least one second pressure gauge that is attached to a position that is the same condition as the position where the first pressure gauge is attached with respect to the pressure measurement value, measures the pressure in the vacuum processing chamber, the vacuum processing chamber, and the The vacuum processing apparatus provided with the 1st shielding mechanism which shields the atmosphere between 2nd pressure gauges, and the pressure control apparatus which controls the pressure in the said vacuum processing apparatus.   The vacuum processing apparatus according to claim 1, further comprising a second shielding mechanism that shields an atmosphere between the vacuum processing chamber and the first pressure gauge. The second pressure gauge is provided at any position where the distance from the exhaust port for exhausting the vacuum processing chamber by the exhaust device is the same as the distance from the exhaust port to the first pressure gauge. The vacuum processing apparatus according to claim 1 or 2.   The first shielding mechanism shields the atmosphere between the vacuum processing chamber and the second pressure gauge during an actual process, and the atmosphere between the vacuum processing chamber and the second pressure gauge during calibration. 4. The vacuum processing apparatus according to claim 1, wherein the gas introduction mechanism introduces a process gas during an actual process and introduces an inert gas during calibration.   The pressure control device controls the pressure in the vacuum processing chamber based on the pressure measurement result of the first pressure gauge during an actual process, and the pressure control device based on the pressure measurement result of the second pressure gauge during calibration. The vacuum processing apparatus according to claim 4, wherein the pressure in the vacuum processing apparatus is controlled to calibrate the measurement value of the first pressure gauge based on the measurement value of the second pressure gauge.   An inert gas is introduced into the vacuum processing chamber, pressure control in at least two different pressure zones centered on the actual process pressure is performed at an arbitrary timing when the product is not processed, and the first pressure gauge The vacuum processing apparatus according to claim 1, wherein when the measured value of the second pressure gauge is different from the measured value of the second pressure gauge, the first pressure gauge is calibrated in an actual process area.   The second pressure gauge is always kept in a calibrated state with an inert gas without being operated by being isolated from the vacuum processing chamber by the shielding mechanism during the actual process when the process gas is introduced. The vacuum processing apparatus according to claim 6.

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