JP2010251448A - Solid-state pulsed laser apparatus for output of third harmonic waves - Google Patents

Solid-state pulsed laser apparatus for output of third harmonic waves Download PDF

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JP2010251448A
JP2010251448A JP2009097832A JP2009097832A JP2010251448A JP 2010251448 A JP2010251448 A JP 2010251448A JP 2009097832 A JP2009097832 A JP 2009097832A JP 2009097832 A JP2009097832 A JP 2009097832A JP 2010251448 A JP2010251448 A JP 2010251448A
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harmonic
temperature
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semiconductor laser
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Kazuma Watanabe
一馬 渡辺
Kimitada Tojo
公資 東條
Ichiro Fukushi
一郎 福士
Naoya Ishigaki
直也 石垣
Akiyuki Kadoya
章之 門谷
Eiji Irisa
英二 入佐
Shingo Uno
進吾 宇野
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Shimadzu Corp
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Shimadzu Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To stabilize the peak intensity of a pulse output. <P>SOLUTION: A peak intensity A of a pulse output detected by a photodiode is measured, and a difference B-A between the peak intensity A and a reference peak intensity B that is preliminarily set is determined (step D1). Then, a driving current correcting amount C=k(B-A) is determined (step D2). Next, a value obtained by adding the driving current correcting amount C to the last driving current I<SB>t-1</SB>is set as a new driving current I<SB>t</SB>. At the next pulse output, the new driving current I<SB>t</SB>is supplied to a semiconductor laser (step D3). <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、第三高調波を出力する固体パルスレーザ装置に関し、さらに詳しくは、第三高調波のパルス出力のピーク強度を安定化できる固体パルスレーザ装置に関する。   The present invention relates to a solid-state pulse laser device that outputs a third harmonic, and more particularly to a solid-state pulse laser device that can stabilize the peak intensity of the third harmonic pulse output.

従来の第三高調波を出力する固体パルスレーザ装置では、パルス出力の平均強度が一定になるように半導体レーザの駆動電流を制御していた。また、半導体レーザや固体レーザ媒質などの温度が予め設定された温度になるように温度制御していた。   In the conventional solid-state pulse laser device that outputs the third harmonic, the driving current of the semiconductor laser is controlled so that the average intensity of the pulse output is constant. Further, the temperature control is performed so that the temperature of the semiconductor laser, the solid laser medium, or the like becomes a preset temperature.

他方、パルス出力のピーク強度を検出し、それを基にQスイッチに供給する高周波電力をフィードバック制御し、ピーク強度を安定化する技術が知られている(例えば、特許文献1参照。)。また、半導体レーザの駆動電流を常時監視し、駆動電流の変化が予め定められた所定値を超えると、使用を継続しながら温度チューニングをやり直し、最小の駆動電流になるボトム温度を再設定する固体レーザ装置が知られている(例えば、特許文献2参照。)。
特許第3445390号公報([0041]) 特開2007−234759号公報([0022])
On the other hand, a technique is known in which the peak intensity of a pulse output is detected and the high-frequency power supplied to the Q switch is feedback-controlled based on the detected peak intensity to stabilize the peak intensity (for example, see Patent Document 1). A solid-state monitor that constantly monitors the drive current of the semiconductor laser, and if the change in the drive current exceeds a predetermined value, the temperature is tuned again while continuing to use, and the bottom temperature at which the minimum drive current is achieved is reset. A laser device is known (for example, refer to Patent Document 2).
Japanese Patent No. 3445390 ([0041]) JP 2007-234759 A ([0022])

上記従来の第三高調波を出力する固体パルスレーザ装置では、パルス出力の平均強度は一定になるが、ピーク強度のバラツキを抑制できない問題点があった。また、経時変化などによる半導体レーザや固体レーザ媒質などの温度特性の変動に対応できない問題点があった。
他方、特許文献1に記載の従来技術では、高周波電力の制御になるため、構成が煩雑になる問題点があった。
In the conventional solid-state pulse laser device that outputs the third harmonic, the average intensity of the pulse output is constant, but there is a problem that variation in peak intensity cannot be suppressed. In addition, there is a problem that it cannot cope with fluctuations in temperature characteristics of a semiconductor laser or a solid-state laser medium due to changes with time.
On the other hand, the conventional technique described in Patent Document 1 has a problem in that the configuration becomes complicated because of the control of high-frequency power.

特許文献2に記載の従来技術は、第三高調波を出力する固体パルスレーザ装置に適用可能である。   The prior art described in Patent Document 2 can be applied to a solid-state pulse laser device that outputs a third harmonic.

そこで、本発明の目的は、第三高調波のパルス出力のピーク強度を安定化できる固体パルスレーザ装置および該固体パルスレーザ装置に特許文献2に記載の従来技術を適用した固体パルスレーザ装置を提供することにある。   Accordingly, an object of the present invention is to provide a solid-state pulse laser device capable of stabilizing the peak intensity of the third harmonic pulse output and a solid-state pulse laser device in which the conventional technique described in Patent Document 2 is applied to the solid-state pulse laser device. There is to do.

第1の観点では、本発明は、レーザ光を発生する半導体レーザと、前記半導体レーザに駆動電流を供給する半導体レーザ駆動回路と、前記半導体レーザから出力されたレーザ光により励起される固体レーザ媒質と、前記固体レーザ媒質を含む光共振器内に設置され前記光共振器で発振する基本波の第三高調波を出力するための第二高調波発生用結晶および第三高調波用結晶と、前記半導体レーザと前記固体レーザ媒質と前記第二高調波発生用結晶と前記第三高調波用結晶の少なくとも一つの温度を制御する温度制御手段と、前記基本波または前記第二高調波または前記第三高調波のいずれかのパルス出力の一部を検出するモニタ用光出力検出器と、前記モニタ用光出力検出器で検出したパルス出力のピーク強度を検出して前記半導体レーザ駆動回路をフィードバック制御しパルス出力のピーク強度を安定化するピーク強度安定化手段とを具備したことを特徴とする第三高調波を出力する固体パルスレーザ装置を提供する。
上記第1の観点による第三高調波を出力する固体パルスレーザ装置では、パルス出力のピーク強度を検出して半導体レーザ駆動回路をフィードバック制御するため、パルス出力のピーク強度を安定化することが出来る。また、半導体レーザの駆動電流の制御になるため、構成が簡単になる。
In a first aspect, the present invention relates to a semiconductor laser that generates laser light, a semiconductor laser driving circuit that supplies a driving current to the semiconductor laser, and a solid-state laser medium that is excited by the laser light output from the semiconductor laser. A second harmonic generating crystal and a third harmonic crystal for outputting a third harmonic of a fundamental wave oscillated by the optical resonator installed in an optical resonator including the solid-state laser medium, Temperature control means for controlling the temperature of at least one of the semiconductor laser, the solid-state laser medium, the second harmonic generation crystal, and the third harmonic crystal; the fundamental wave, the second harmonic wave, or the first harmonic wave; A monitoring optical output detector that detects a part of any pulse output of the third harmonic, and a peak intensity of the pulse output detected by the monitoring optical output detector to detect the semiconductor laser drive. To provide a solid-state pulsed laser apparatus for outputting the third harmonic, characterized by comprising a peak intensity stabilizing means for stabilizing the peak intensity of the feedback control of the circuit pulse output.
In the solid-state pulse laser device that outputs the third harmonic according to the first aspect, the peak intensity of the pulse output can be stabilized because the peak intensity of the pulse output is detected and the semiconductor laser driving circuit is feedback controlled. . Further, since the driving current of the semiconductor laser is controlled, the configuration is simplified.

第2の観点では、本発明は、前記第1の観点による第三高調波を出力する固体パルスレーザ装置において、前記半導体レーザの駆動電流の変化を常時監視し、その変化量が所定値を超えた場合に、半導体レーザの温度を制御する温度制御手段と前記固体レーザ媒質の温度を制御する温度制御手段と前記第二高調波発生用結晶の温度を制御する温度制御手段と前記第三高調波用結晶の温度を制御する温度制御手段の少なくとも一つを駆動して所定の温度範囲で温度掃引しながら前記半導体レーザの駆動電流を測定し最小となるボトム電流値を求め、該ボトム電流値を前記温度制御手段の目標値とする目標値設定手段を具備したことを特徴とする第三高調波を出力する固体パルスレーザ装置を提供する。
なお、上記「常時監視」には、他の必要な処理を行うために一時的に監視を中断する場合も含まれる。
上記第2の観点による第三高調波を出力する固体パルスレーザ装置では、半導体レーザの駆動電流を常時監視し、駆動電流の変化が予め定められた所定値を超えると、使用を継続しながら温度チューニングをやり直し、最小の駆動電流になるボトム温度を再設定する。このため、経時変化などによる半導体レーザや固体レーザ媒質などの温度特性の変動に対応でき、常に最小の駆動電流を維持できる。
In a second aspect, the present invention provides a solid-state pulse laser device that outputs a third harmonic according to the first aspect, and constantly monitors a change in the drive current of the semiconductor laser, and the amount of change exceeds a predetermined value. Temperature control means for controlling the temperature of the semiconductor laser, temperature control means for controlling the temperature of the solid laser medium, temperature control means for controlling the temperature of the second harmonic generation crystal, and the third harmonic. And driving at least one of temperature control means for controlling the temperature of the crystal for crystal and sweeping the temperature in a predetermined temperature range to measure the driving current of the semiconductor laser to obtain a minimum bottom current value, and to calculate the bottom current value A solid-state pulse laser device for outputting a third harmonic is provided, comprising target value setting means for setting a target value of the temperature control means.
The “always monitoring” includes a case where monitoring is temporarily interrupted in order to perform other necessary processing.
In the solid-state pulse laser device that outputs the third harmonic according to the second aspect, the driving current of the semiconductor laser is constantly monitored, and if the change in the driving current exceeds a predetermined value, the temperature is maintained while being used continuously. Re-tune and reset the bottom temperature to the minimum drive current. For this reason, it is possible to cope with fluctuations in temperature characteristics of a semiconductor laser, a solid-state laser medium, and the like due to changes over time, and the minimum driving current can always be maintained.

本発明の第三高調波を出力する固体パルスレーザ装置によれば、パルス出力のピーク強度を安定化することが出来る。また、半導体レーザの駆動電流を常に最小に維持することが出来る。   According to the solid-state pulse laser device that outputs the third harmonic of the present invention, the peak intensity of the pulse output can be stabilized. In addition, the driving current of the semiconductor laser can always be kept at a minimum.

以下、図に示す実施例により本発明をさらに詳細に説明する。なお、これにより本発明が限定されるものではない。   Hereinafter, the present invention will be described in more detail with reference to the embodiments shown in the drawings. Note that the present invention is not limited thereby.

−実施例1−
図1は、実施例1に係る第三高調波を出力する固体パルスレーザ装置100を示す説明図である。
この第三高調波を出力する固体パルスレーザ装置100は、励起レーザ光を発生する半導体レーザ1と、ペルチェ素子と温度センサとを有し半導体レーザ1の温調を行うための温調ユニット2と、励起レーザ光を集光する集光レンズ系3と、励起レーザ光の入射面に反射面が形成され且つ励起レーザ光により励起されて基本波を発生する固体レーザ媒質4と、Qスイッチとして機能する音響光学素子5と、基本波を透過し第二高調波および第三高調波を反射するビームスプリッタ6と、基本波および第二高調波から第三高調波を発生するTHG素子7と、基本波から第二高調波を発生するSHG素子8と、固体レーザ媒質4との間に光共振器15を形成するミラー9と、THG素子7の温調を行うための温調ユニット10と、SHG素子8の温調を行うための温調ユニット11と、第二高調波を透過し第三高調波を反射するビームスプリッタ12と、第三高調波の一部を反射し他の一部を透過するビームスプリッタ13と、第三高調波の一部を受光するホトダイオード14と、固体レーザ媒質4の温調を行うための温調ユニット16と、温調ユニット2により半導体レーザ1の温度を制御する半導体レーザ温度制御回路21と、温調ユニット16により固体レーザ媒質4の温度を制御する固体レーザ媒質温度制御回路22と、温調ユニット10によりTHG素子7の温度を制御するTHG素子温度制御回路23と、温調ユニット11によりSHG素子7の温度を制御するTHG素子温度制御回路24と、半導体レーザ1を駆動するための駆動電流Iを出力する半導体レーザ駆動回路25と、ホトダイオード14の出力に基づいて半導体レーザ駆動回路25を制御すると共に各温度制御回路21,22,23、24を制御する制御回路26とを具備している。
Example 1
FIG. 1 is an explanatory diagram illustrating a solid-state pulse laser device 100 that outputs a third harmonic according to the first embodiment.
The solid-state pulse laser device 100 that outputs the third harmonic includes a semiconductor laser 1 that generates excitation laser light, a temperature control unit 2 that includes a Peltier element and a temperature sensor, and controls the temperature of the semiconductor laser 1. A condensing lens system 3 that condenses the excitation laser beam, a solid laser medium 4 that has a reflection surface formed on the incident surface of the excitation laser beam and is excited by the excitation laser beam to generate a fundamental wave, and functions as a Q switch An acoustooptic device 5 that transmits a fundamental wave and reflects a second harmonic and a third harmonic, a THG device 7 that generates a third harmonic from the fundamental and the second harmonic, and a fundamental An SHG element 8 that generates a second harmonic from the wave, a mirror 9 that forms an optical resonator 15 between the solid-state laser medium 4, a temperature adjustment unit 10 that adjusts the temperature of the THG element 7, and SHG Element 8 A temperature control unit 11 for adjusting, a beam splitter 12 that transmits the second harmonic and reflects the third harmonic, and a beam splitter 13 that reflects a part of the third harmonic and transmits the other part. A photodiode 14 for receiving a part of the third harmonic, a temperature control unit 16 for controlling the temperature of the solid-state laser medium 4, and a semiconductor laser temperature control for controlling the temperature of the semiconductor laser 1 by the temperature control unit 2. A circuit 21, a solid-state laser medium temperature control circuit 22 for controlling the temperature of the solid-state laser medium 4 by the temperature control unit 16, a THG element temperature control circuit 23 for controlling the temperature of the THG element 7 by the temperature control unit 10, and a temperature control A THG element temperature control circuit 24 for controlling the temperature of the SHG element 7 by the unit 11 and a semiconductor laser driving circuit for outputting a driving current I for driving the semiconductor laser 1 5, and a control circuit 26 for controlling the respective temperature control circuits 21, 22, 23, 24 controls the semiconductor laser driving circuit 25 based on the output of the photodiode 14.

図2は、実施例1に係る駆動電流制御処理を示すフロー図である。この処理は、パルス出力毎に実行される。
ステップD1では、ホトダイオード14で検出したパルス出力のピーク強度Aを測定し、予め設定されていた基準ピーク強度Bとの差B−Aを求める。
ステップD2では、駆動電流補正量C=k(B−A)を求める。ここで、kは比例係数である。
ステップD3では、1時刻前の駆動電流It−1に駆動電流補正量Cを加算した値を新たな駆動電流Itとし、次のパルス出力時に半導体レーザ1に供給する。そして、ステップD1に戻る。
FIG. 2 is a flowchart illustrating the drive current control process according to the first embodiment. This process is executed for each pulse output.
In step D1, the peak intensity A of the pulse output detected by the photodiode 14 is measured, and the difference B−A from the preset reference peak intensity B is obtained.
In step D2, a drive current correction amount C = k (B−A) is obtained. Here, k is a proportionality coefficient.
In step D3, a value obtained by adding the drive current correction amount C to the drive current It-1 one time before is set as a new drive current It, which is supplied to the semiconductor laser 1 at the next pulse output time. Then, the process returns to step D1.

図3は、実施例1に係る目標温度更新処理を示すフロー図である。この処理は、一定時間ごとに実行される。
ステップR1では、半導体レーザ1の駆動電流Iを測定し、基準電流値として記憶する。
FIG. 3 is a flowchart illustrating the target temperature update process according to the first embodiment. This process is executed at regular time intervals.
In step R1, the drive current I of the semiconductor laser 1 is measured and stored as a reference current value.

ステップR2では、駆動電流Iを測定し、基準電流値との差を求める。
ステップR3では、差が所定値(例えば100mA)より小さいならステップR2に戻り、小さくないならステップR4へ進む。
In step R2, the drive current I is measured, and the difference from the reference current value is obtained.
In step R3, if the difference is smaller than a predetermined value (for example, 100 mA), the process returns to step R2, and if not smaller, the process proceeds to step R4.

ステップR4では、図4に示すボトム温度検出処理を実行する。そして、ステップR1に戻る。   In step R4, the bottom temperature detection process shown in FIG. 4 is executed. Then, the process returns to step R1.

図4は、実施例1に係るボトム温度検出処理を示すフロー図である。この処理は、パワーオン時に実行される。なお、一定期間毎に、あるいは、ユーザの指示があった時に実行してもよい。
ステップS1では、仮最小値Ib=Isに初期化する。
FIG. 4 is a flowchart illustrating the bottom temperature detection process according to the first embodiment. This process is executed at power-on. Note that it may be executed at regular intervals or when a user gives an instruction.
In step S1, the temporary minimum value Ib = Is is initialized.

ステップS2では、ステップ的に半導体レーザ1の温度T1を変更するときの1ステップの変更幅をΔT1とするとき、現在温度T1よりもΔT1だけ下げた温度T1=T1−ΔT1を半導体レーザ1の温度T1とする。   In step S2, if the change width of one step when stepwise changing the temperature T1 of the semiconductor laser 1 is ΔT1, the temperature T1 = T1−ΔT1 that is lower than the current temperature T1 by ΔT1 is set to the temperature of the semiconductor laser 1. Let T1.

ステップS3では、下げた温度T1での駆動電流Iが仮最小値Ibよりも小さいかチェックし、小さいならステップS4へ進み、小さくないならステップS5へ進む。   In step S3, it is checked whether the drive current I at the lowered temperature T1 is smaller than the temporary minimum value Ib. If smaller, the process proceeds to step S4, and if not smaller, the process proceeds to step S5.

ステップS4では、現在温度T1を仮最小電流温度Tb1とする。また、現在の駆動電流Iを新たな仮最小値Ibにする。そして、ステップS2に戻る。   In step S4, the current temperature T1 is set as a temporary minimum current temperature Tb1. Further, the current drive current I is set to a new temporary minimum value Ib. Then, the process returns to step S2.

ステップS5では、現在温度T1よりもΔT1だけ上げた温度T1=T1+ΔT1を半導体レーザ1の温度T1とする。   In step S5, the temperature T1 = T1 + ΔT1 which is higher than the current temperature T1 by ΔT1 is set as the temperature T1 of the semiconductor laser 1.

ステップS6では、上げた温度T1での駆動電流Iが仮最小値Ibよりも小さいかチェックし、小さいならステップS7へ進み、小さくないならステップS8へ進む。   In step S6, it is checked whether the drive current I at the raised temperature T1 is smaller than the temporary minimum value Ib. If smaller, the process proceeds to step S7, and if not smaller, the process proceeds to step S8.

ステップS7では、現在温度T1を仮最小電流温度Tb1とする。また、現在の駆動電流Iを新たな仮最小値Ibにする。そして、ステップS5に戻る。   In step S7, the current temperature T1 is set as a temporary minimum current temperature Tb1. Further, the current drive current I is set to a new temporary minimum value Ib. Then, the process returns to step S5.

ステップS8では、固体レーザ媒質4の温度T2、THG素子7の温度T3、SHG素子8の温度T4についてもステップS2〜S7を行い、最小の駆動電流Iを与える温度T2b,T3b,T4bを得る。   In step S8, steps S2 to S7 are also performed for the temperature T2 of the solid-state laser medium 4, the temperature T3 of the THG element 7, and the temperature T4 of the SHG element 8 to obtain temperatures T2b, T3b, and T4b that give the minimum drive current I.

ステップS9では、最小の駆動電流Iを与える温度T2b,T3b,T4bを新たな目標温度T1,T2,T3,T4として半導体レーザ温度制御回路21,固体レーザ媒質温度制御回路22,THG素子温度制御回路23,SHG素子温度制御回路24に与える。そして、処理を終了する。   In step S9, the temperatures T2b, T3b, and T4b giving the minimum drive current I are set as new target temperatures T1, T2, T3, and T4, the semiconductor laser temperature control circuit 21, the solid laser medium temperature control circuit 22, and the THG element temperature control circuit. 23, to the SHG element temperature control circuit 24. Then, the process ends.

実施例1の第三高調波を出力する固体パルスレーザ装置100によれば、パルス出力のピーク強度を安定化することが出来る。また、半導体レーザ1の駆動電流Iを常に最小に維持することが出来る。   According to the solid-state pulse laser device 100 that outputs the third harmonic of the first embodiment, the peak intensity of the pulse output can be stabilized. In addition, the drive current I of the semiconductor laser 1 can always be kept at a minimum.

−実施例2−
図2のステップD1において、ピーク強度Aの代わりに、直前の複数発(例えば5発)のパルス出力のピーク強度を平均した平均ピーク強度を用いてもよい。
この場合、瞬発的な異常値の影響を抑制することが出来る。
-Example 2-
In step D1 of FIG. 2, instead of the peak intensity A, an average peak intensity obtained by averaging the peak intensities of a plurality of previous (for example, five) pulse outputs may be used.
In this case, the influence of an instantaneous abnormal value can be suppressed.

−実施例3−
図4では、半導体レーザ温度T1,固定レーザ媒質温度T2,THG素子温度T3,SHG素子温度T4を温度掃引したが、これらの少なくとも1つを温度掃引してもよい。
-Example 3-
In FIG. 4, the semiconductor laser temperature T1, the fixed laser medium temperature T2, the THG element temperature T3, and the SHG element temperature T4 are swept, but at least one of them may be swept.

本発明の第三高調波を出力する固体パルスレーザ装置は、バイオエンジニアリング分野や計測分野で利用できる。   The solid-state pulse laser device that outputs the third harmonic of the present invention can be used in the bioengineering field and the measurement field.

実施例1に係る第三高調波を出力する固体パルスレーザ装置を示す構成説明図である。1 is a configuration explanatory diagram illustrating a solid-state pulse laser device that outputs a third harmonic according to Example 1. FIG. 実施例1に係る駆動電流制御処理を示すフロー図である。FIG. 3 is a flowchart illustrating a drive current control process according to the first embodiment. 実施例1に係る目標温度更新処理を示すフロー図である。It is a flowchart which shows the target temperature update process which concerns on Example 1. FIG. 実施例1に係るボトム温度検出処理を示すフロー図である。It is a flowchart which shows the bottom temperature detection process which concerns on Example 1. FIG.

1 半導体レーザ
2,10,11,16 温調ユニット
3 集光レンズ系
4 固体レーザ媒質
5 音響光学素子
6,12,13 ビームスプリッタ
7 THG素子
8 SHG素子
9 ミラー
14 ホトダイオード
15 光共振器
21 半導体レーザ温度制御回路
22 固体レーザ媒質温度制御回路
23 THG素子温度制御回路
24 SHG素子温度制御回路
25 半導体レーザ駆動回路
26 制御回路
100 第三高調波を出力する固体パルスレーザ装置
DESCRIPTION OF SYMBOLS 1 Semiconductor laser 2, 10, 11, 16 Temperature control unit 3 Condensing lens system 4 Solid-state laser medium 5 Acousto-optic element 6, 12, 13 Beam splitter 7 THG element 8 SHG element 9 Mirror 14 Photo diode 15 Optical resonator 21 Semiconductor laser Temperature control circuit 22 Solid laser medium temperature control circuit 23 THG element temperature control circuit 24 SHG element temperature control circuit 25 Semiconductor laser drive circuit 26 Control circuit 100 Solid pulse laser device for outputting third harmonic

Claims (2)

レーザ光を発生する半導体レーザと、前記半導体レーザに駆動電流を供給する半導体レーザ駆動回路と、前記半導体レーザから出力されたレーザ光により励起される固体レーザ媒質と、前記固体レーザ媒質を含む光共振器内に設置され前記光共振器で発振する基本波の第三高調波を出力するための第二高調波発生用結晶および第三高調波用結晶と、前記半導体レーザと前記固体レーザ媒質と前記第二高調波発生用結晶と前記第三高調波用結晶の少なくとも一つの温度を制御する温度制御手段と、前記基本波または前記第二高調波または前記第三高調波のいずれかのパルス出力の一部を検出するモニタ用光出力検出器と、前記モニタ用光出力検出器で検出したパルス出力のピーク強度を検出して前記半導体レーザ駆動回路をフィードバック制御しパルス出力のピーク強度を安定化するピーク強度安定化手段とを具備したことを特徴とする第三高調波を出力する固体パルスレーザ装置。 A semiconductor laser that generates laser light, a semiconductor laser drive circuit that supplies a drive current to the semiconductor laser, a solid-state laser medium that is excited by laser light output from the semiconductor laser, and an optical resonance that includes the solid-state laser medium A second harmonic generating crystal and a third harmonic crystal for outputting a third harmonic of a fundamental wave oscillated by the optical resonator installed in a resonator, the semiconductor laser, the solid-state laser medium, and the Temperature control means for controlling the temperature of at least one of the second harmonic generation crystal and the third harmonic crystal, and the pulse output of either the fundamental wave, the second harmonic, or the third harmonic. A light output detector for monitoring for detecting a part of the output, and a peak intensity of the pulse output detected by the light output detector for monitoring is detected to feedback control the semiconductor laser driving circuit. Solid pulsed laser apparatus for outputting the third harmonic, characterized by comprising a peak intensity stabilizing means for stabilizing the peak intensity of the pulse output. 請求項1に記載の第三高調波を出力する固体パルスレーザ装置において、前記半導体レーザの駆動電流の変化を常時監視し、その変化量が所定値を超えた場合に、半導体レーザの温度を制御する温度制御手段と前記固体レーザ媒質の温度を制御する温度制御手段と前記第二高調波発生用結晶の温度を制御する温度制御手段と前記第三高調波用結晶の温度を制御する温度制御手段の少なくとも一つを駆動して所定の温度範囲で温度掃引しながら前記半導体レーザの駆動電流を測定し最小となるボトム電流値を求め、該ボトム電流値を前記温度制御手段の目標値とする目標値設定手段を具備したことを特徴とする第三高調波を出力する固体パルスレーザ装置。 2. A solid-state pulse laser device for outputting third harmonics according to claim 1, wherein a change in the driving current of the semiconductor laser is constantly monitored, and the temperature of the semiconductor laser is controlled when the change exceeds a predetermined value. Temperature control means for controlling the temperature of the solid state laser medium, temperature control means for controlling the temperature of the second harmonic generation crystal, and temperature control means for controlling the temperature of the third harmonic crystal A minimum current value is obtained by measuring the drive current of the semiconductor laser while driving at least one of the laser diodes and sweeping the temperature in a predetermined temperature range, and setting the bottom current value as a target value of the temperature control means A solid-state pulse laser device for outputting a third harmonic, comprising a value setting means.
JP2009097832A 2009-04-14 2009-04-14 Solid-state pulsed laser apparatus for output of third harmonic waves Pending JP2010251448A (en)

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