JP2010251144A - Substrate for deposition, and deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate for deposition having high utilization efficiency of a material, and a deposition method having high utilization efficiency of the material by utilizing the substrate for deposition. <P>SOLUTION: The substrate 150 for deposition in which a plurality of regions having different deposition characteristics are formed on the first side of a support substrate 100 is prepared, the material which can be deposited is deposited on the first side of the substrate 150 for deposition, the first side of the substrate 150 for deposition on which the material is deposited and a substrate to be deposited are disposed face to face, and the material may be preferably deposited on a plurality of the substrates to be deposited from one piece of the substrate 150 for deposition by using a plurality of deposition methods corresponding to the different deposition characteristics one by one. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

The present invention relates to a deposition substrate used for deposition of a material that can be deposited on a substrate, and a deposition method using the deposition substrate. In addition, the present invention relates to a film formation apparatus using the film formation substrate and a thin film manufactured using the film formation substrate.

A light-emitting element having a simple structure in which a light-emitting layer containing an organic compound as a light-emitting substance is sandwiched between electrodes is thin and lightweight, can respond to an input signal at high speed, and can be driven by a low-voltage direct current. Because of these characteristics, it is attracting attention as a light-emitting element for next-generation flat panel displays. In addition, a display device in which the light emitting elements are arranged in a matrix has characteristics such as excellent contrast and image quality, a wide viewing angle, and excellent visibility.

A full-color display device can be manufactured by arranging light-emitting elements using a light-emitting substance as an organic compound that emits light in Red (R), Green (G), and Blue (B).

A shadow mask method or the like is known as a method of arranging light emitting elements using organic compounds having different emission colors as light emitting substances in a matrix.

The shadow mask method is a method in which a thin metal plate (shadow mask) with holes is brought into close contact with a deposition target substrate, and a material is deposited from the shadow mask side. By passing the holes, the material can be selectively deposited on the deposition target substrate.

In addition to the shadow mask method, light is selectively converted into heat and the material on the film formation substrate is selectively heated to perform evaporation or transfer onto the film formation substrate (hereinafter referred to as photothermal film formation method). ) And a method of forming a film by selective contact (hereinafter referred to as a contact film forming method) are known.

As an example of the photothermal film formation method, a method using a film formation substrate in which a high absorption region that absorbs light and converts it into heat and a low absorption region that reflects light are provided on a light-transmitting support substrate. Has been devised (Patent Document 1). As an example of the contact film formation method, a method using a film formation substrate having a convex portion on the surface according to a pattern to be formed has been devised (Patent Documents 2 to 4).

JP 2006-309995 A JP 2001-143866 A JP 2005-78941 A JP 2003-215323 A

In the film-forming process, it is preferable that the material is not wasted and can be used with high efficiency. An object of one embodiment of the present invention is to provide a deposition substrate with high material utilization efficiency. It is another object of the present invention to provide a film formation method using the film formation substrate with high material utilization efficiency.

Preparing a film-forming substrate in which a plurality of regions having different film-forming characteristics are formed on a first surface of a support substrate, forming a filmable material on the first surface of the film-forming substrate, The first surface of the deposition substrate on which the material is deposited is placed opposite to the deposition target substrate, and a plurality of deposition methods corresponding to the different deposition characteristics are sequentially used to form a single film The material may be deposited on a plurality of deposition target substrates from the production substrate.

That is, according to one embodiment of the present invention, the first surface of the substrate includes at least a first region, a second region, and a third region that are independent from each other, and the first region is another region. The second region has a light absorption layer that absorbs light irradiated from the second surface, and the third region is a deposition substrate that overlaps with the light reflection layer.

Another embodiment of the present invention is the deposition substrate in which the first region overlaps with the light reflecting layer.

Another embodiment of the present invention is the film formation substrate including a first region in which a light absorption layer is stacked over the light reflection layer.

Another embodiment of the present invention is the film formation substrate including a second region in which a light absorption layer is stacked over a heat insulating layer that has lower thermal conductivity than the substrate and transmits irradiated light. .

In one embodiment of the present invention, the first surface of the substrate includes at least a first region, a second region, and a third region that are independent from each other, and the first region is another region. The second region has a light absorbing layer that absorbs light irradiated from the second surface, and the third region overlaps the light reflecting layer, and the second surface has a first surface of the deposition substrate. A film-forming material that can be formed on the film is formed, and the first surface of the film-forming substrate on which the film-forming material is formed and the film-forming surface of the first film-forming substrate face each other. Pressure-bonding, peeling off the film formation substrate and the first film formation substrate, forming the film formation material formed in the first region on the first film formation substrate, In a state where the first surface of the film formation substrate and the film formation surface of the second film formation substrate are arranged to face each other and close to each other, light is emitted from the second surface side of the film formation substrate. Irradiate The film formation material formed in the second region is formed on the second deposition substrate, and the first surface of the deposition substrate and the third deposition substrate are deposited. With the surfaces facing each other and in close proximity to each other, the deposition substrate is heated to deposit the deposition material deposited in the third region on the third deposition substrate. This is a film forming method.

In one embodiment of the present invention, the first surface of the substrate includes at least a first region, a second region, and a third region that are independent from each other, and the first region is another region. The second region has a light absorbing layer that absorbs light irradiated from the second surface, and the third region overlaps the light reflecting layer, and the second surface has a first surface of the deposition substrate. A film-forming material that can be formed on the film is formed, and the first surface of the film-forming substrate on which the film-forming material is formed and the film-forming surface of the second film-forming substrate face each other. In the state of being disposed close to each other, light is irradiated from the second surface side of the film formation substrate, and the film formation material formed in the second region is applied to the second film formation substrate. The film formation is performed, and the first surface of the film formation substrate and the film formation surface of the first film formation substrate are pressed against each other, and the film formation substrate and the first film formation substrate are bonded to each other. Tear off The film formation material formed in the first region is formed on the first film formation substrate, and the first surface of the film formation substrate and the third film formation substrate are formed. With the surfaces facing each other and in close proximity to each other, the deposition substrate is heated to deposit the deposition material deposited in the third region on the third deposition substrate. This is a film forming method.

Note that in this specification, an EL layer refers to a layer provided between a pair of electrodes of a light-emitting element. Therefore, a light-emitting layer containing an organic compound that is a light-emitting substance sandwiched between electrodes is one embodiment of an EL layer.

Further, in this specification, when the substance A is dispersed in a matrix made of another substance B, the substance B constituting the matrix is called a host material, and the substance A dispersed in the matrix is called a guest material. To do. Note that the substance A and the substance B may be a single substance or a mixture of two or more kinds of substances.

Note that in this specification, a light-emitting device refers to an image display device, a light-emitting device, or a light source (including a lighting device). In addition, a module in which a connector such as an FPC (Flexible Printed Circuit) or TAB (Tape Automated Bonding) tape or TCP (Tape Carrier Package) is attached to the light emitting device, or a printed wiring board provided on the end of the TAB tape or TCP In addition, a module in which an IC (integrated circuit) is directly mounted on a substrate on which a light emitting element is formed by a COG (Chip On Glass) method is also included in the light emitting device.

ADVANTAGE OF THE INVENTION According to this invention, the board | substrate for film-forming with the high utilization efficiency of material can be provided. Further, it is possible to provide a method for efficiently depositing the material deposited on the deposition substrate on the deposition target substrate.

4A and 4B illustrate a film formation substrate according to an embodiment. 8A and 8B illustrate a step according to an embodiment. 4A and 4B illustrate a film formation method according to an embodiment. 4A and 4B illustrate a film formation method according to an embodiment. 4A and 4B illustrate a film formation method according to an embodiment. 4A and 4B illustrate a film formation method according to an embodiment. 4A and 4B illustrate a film formation method according to an embodiment. 2A and 2B illustrate a film formation apparatus according to an embodiment. 2A and 2B illustrate a film formation apparatus according to an embodiment. 2A and 2B illustrate a film formation apparatus according to an embodiment. A light-emitting element manufactured using the deposition substrate according to any of the embodiments. A light-emitting element manufactured using the deposition substrate according to any of the embodiments. A display element manufactured using the deposition substrate according to any of the embodiments. A display element manufactured using the deposition substrate according to any of the embodiments. A display element manufactured using the deposition substrate according to any of the embodiments. A display element manufactured using the deposition substrate according to any of the embodiments. An electronic device in which a light-emitting device manufactured using the deposition substrate according to any of the embodiments is mounted. An electronic device in which a light-emitting device manufactured using the deposition substrate according to any of the embodiments is mounted.

Embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
In this embodiment mode, a deposition substrate and a deposition method using the deposition substrate will be described.

FIG. 1 shows one mode of a film formation substrate 150 of this embodiment mode. FIG. 1A is a plan view showing a part of a large film-forming substrate 150, and FIG. 1B is a cross-sectional view taken along the line PS in FIG. 1A.

In the deposition substrate 150, at least a first region 151, a second region 152, and a third region 153 are provided on the light-transmitting support substrate 100. Each of the first region 151 to the third region 153 is formed to have approximately the same size as the pattern formed on the deposition target substrate. For example, in the deposition substrate 150 illustrated in FIG. 1A, the first region 151 to the third region 153 having a width substantially equal to the width of the pattern formed on the deposition target substrate are striped. Is arranged. Note that a margin 154 may be provided as necessary.

A cross-sectional structure of the deposition substrate 150 is described with reference to FIG. The first to third regions are surrounded by a broken line. The first region 151 is more convex than the other regions and protrudes. Therefore, when the first surface of the deposition substrate 150 and the deposition target substrate are overlapped, they are in contact with each other in the first region 151 and are not in contact with each other in the second region and the third region.

The first region 151 may be formed to be more convex than other regions by laminating a thin film on the support substrate 100, or may be formed to be more convex than other regions by etching unnecessary portions of the support substrate 100. Also good. Note that an example in which the light reflection layer 111, the heat insulating layer 112, and the separation layer 114 are stacked to form the first region 151 is illustrated in FIG. 1B, but the light absorption layer 113 is reflected instead of the separation layer 114. The first region 151 may be formed so as to overlap with the layer 111. In this case, the light absorbing layer 113 does not generate heat because the light reflecting layer 111 blocks the light irradiated from the second surface side toward the first surface.

The second region 152 includes a light absorption layer 113 that absorbs light irradiated from the second surface. Note that the light absorption layer 113 in the second region 152 is preferably stacked on the first surface of the supporting substrate with the heat insulating layer 112 interposed therebetween. Since the heat insulating layer 112 suppresses a phenomenon in which heat is dissipated from the light absorption layer 113 to the support substrate 100, the material layer can be effectively heated.

The third region 153 overlaps with the light reflecting layer 111, and the light reflecting layer 111 prevents the light irradiated from the second surface side of the support substrate 100 from heating the third region 153. It is out. The light reflecting layer 111 may be provided on the first surface or the second surface side of the support substrate 100.

The third region 153 may overlap the heat insulating layer 112, and a structure in which the light reflecting layer 111 and the heat insulating layer 112 are provided in this order from the second surface side where light is irradiated is preferable. Note that the light reflecting layer 111 and the heat insulating layer 112 are not necessarily in contact with each other.

A third region 153 of the deposition substrate 150 illustrated in FIG. 1B includes a light reflecting layer 111 over the first surface of the supporting substrate 100 and a heat insulating layer 112 over the light reflecting layer 111. ing. The light reflecting layer 111 prevents the irradiation light from heating the third region, and the heat insulating layer 112 makes it difficult to transmit heat to the third region 153.

The margin 154 preferably has the light reflecting layer 111. In this embodiment mode, the light reflection layer 111 is provided.

Note that FIG. 1C illustrates a film-formation substrate having a structure different from that in FIG.

Next, the support substrate 100, the light reflecting layer 111, the heat insulating layer 112, the light absorbing layer 113, and the peeling layer 114 that constitute the film formation substrate 150 will be described.

Since the support substrate 100 needs to transmit light, it is preferable that the support substrate 100 be a substrate having high light transmittance. Specifically, when lamp light or laser light is used as the light source, it is preferable to use a substrate that transmits the light. Moreover, it is preferable that it is a material with low heat conductivity. This is because the heat obtained from the irradiated light can be efficiently transmitted to the material layer 160 due to the low thermal conductivity. As the support substrate 100, for example, a glass substrate, a quartz substrate, a plastic substrate containing an inorganic material, or the like can be used.

When the support substrate 100 is mother glass, the size of the substrate is the first generation (320 mm × 400 mm), the second generation (400 mm × 500 mm), the third generation (550 mm × 650 mm), the fourth generation (680 mm × 880 mm, Or 730 mm × 920 mm), 5th generation (1000 mm × 1200 mm or 1100 mm × 1250 mm), 6th generation 1500 mm × 1800 mm), 7th generation (1900 mm × 2200 mm), 8th generation (2160 mm × 2460 mm), 9th generation (2400 mm) × 2800 mm, 2450 mm × 3050 mm), 10th generation (2950 mm × 3400 mm), and the like can be used.

The light reflecting layer 111 is preferably formed of a material having a high reflectance of 85% or more, more preferably 90% or more with respect to the peak wavelength of the light to be irradiated.

As a material that can be used for the light reflection layer 111, for example, silver, gold, platinum, copper, aluminum, an alloy containing aluminum, or an alloy containing silver is used when light with a wavelength of 300 nm to 2500 nm is irradiated. be able to. In particular, an aluminum-titanium alloy, an aluminum-neodymium alloy, or a silver-neodymium alloy has a high reflectance with respect to light in the infrared region (wavelength of 800 nm or more), and therefore is preferably used as the light reflecting layer 111. Can do. For example, when the film thickness is 400 nm, the aluminum-titanium alloy film exhibits a reflectance of 85% or more over the infrared region (wavelength of 800 nm or more and 2500 nm or less), and in particular, in the range where the wavelength is 900 nm or more and 2500 nm or less. % Reflectivity is shown. Note that the type of material suitable for the light reflecting layer 111 varies depending on the wavelength of light applied to the support substrate 100.

The light reflecting layer is not limited to a single layer and may be composed of a plurality of layers. More preferably, the light reflecting layer 111 is preferably formed of a material having low thermal conductivity. By using a material having low thermal conductivity, a fine pattern can be formed on the deposition target substrate.

The light reflecting layer 111 can be formed using various methods. For example, it can be formed by sputtering, electron beam vapor deposition, vacuum vapor deposition, or the like. Moreover, although the film thickness of a light reflection layer changes with materials, it is preferable that they are 100 nm or more and 2 micrometers or less in general. By being 100 nm or more, it can suppress that the irradiated light permeate | transmits a light reflection layer.

Various methods can be used for forming the opening in the light reflecting layer 111, but dry etching is preferably used. By using dry etching, the side wall of the opening has a nearly vertical shape, and a fine pattern can be formed.

As a material for forming the heat insulating layer 112, a material having lower thermal conductivity than the light absorption layer 113, the light reflection layer 111, and the substrate 100 is used. When the heat conductivity of the heat insulating layer 112 is low, the heat absorption layer 113 can be efficiently used for film formation without dissipating heat obtained from the irradiated light. Further, it is possible to suppress the heat that the light reflecting layer 111 has absorbed without being reflected from being transmitted to the material layer.

In addition, when the light absorption layer 113 is irradiated with light transmitted through the heat insulating layer 112, the heat insulating layer 112 needs to have a light-transmitting property. Specifically, it is preferable to use a material having a light transmittance of 60% or more for the heat insulating layer 112.

As a material used for the heat insulating layer 112, for example, titanium oxide, silicon oxide, silicon nitride oxide, zirconium oxide, silicon nitride, silicon oxynitride, or the like can be used. Although the film thickness of the heat insulation layer 112 changes with materials, it is preferable to set it as 10 nm or more and 2 micrometers or less, More preferably, you may be 100 nm or more and 1 micrometer or less. By setting the film thickness to 10 nm or more and 2 μm or less, the effect of preventing heat dissipation while exhibiting light is exhibited.

The light absorption layer 113 is a layer that absorbs the irradiated light and converts it into heat. The light absorption layer 113 is preferably formed of a material having a low reflectance of 70% or less with respect to the peak wavelength of the irradiated light and a high absorption rate. In particular, a combination in which the difference in reflectance between the light reflecting layer 111 and the light absorbing layer 113 is large is preferable. Moreover, it is preferable that the light absorption layer 113 is formed of a material having excellent heat resistance so that the light absorption layer 113 does not change by heat. The light absorption layer 113 is not limited to a single layer and may include a plurality of layers.

Various materials can be used for the light absorption layer 113. For example, a metal nitride such as titanium nitride, tantalum nitride, molybdenum nitride, or tungsten nitride, a metal such as titanium, molybdenum, or tungsten, or carbon can be used. Note that since the type of material suitable for the light absorption layer 113 varies depending on the wavelength of light to be irradiated, it is necessary to select a material as appropriate. Further, the light absorption layer 113 is not limited to a single layer and may be composed of a plurality of layers. For example, a stacked structure of metal and metal nitride may be used.

The light absorption layer 113 can be formed using various methods. For example, it can be formed by a sputtering method, an electron beam evaporation method, a vacuum evaporation method, a chemical vapor deposition (CVD) method, or the like.

The thickness of the light absorption layer 113 is such that the irradiated light is not transmitted therethrough, and since the thinner one can be formed with light having a lower energy density, specifically, the thickness is 10 nm or more and 2 μm or less. Preferably there is. More preferably, the film thickness is 10 nm or more and 600 nm or less.

Note that a protective film may be formed over the light absorption layer 113. The protective film has an effect of preventing the light absorption layer 113 from evaporating due to light irradiation. As the light absorption layer 113, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film can be used, or a stacked layer thereof may be used. The thickness of the protective film is preferably 500 nm or less.

The light absorption layer 113 may transmit a part of the irradiated light as long as the deposition material can be heated to the sublimation temperature. However, in the case where part of the light is transmitted, it is necessary to use a film forming material that is not decomposed by light.

The peeling layer 114 has a surface with a low adhesive force to the film formation material. The release layer 114 is preferably formed using a material having a surface energy smaller than that of a deposition region of the deposition substrate. Since the adhesive force between the release layer 114 having a small surface energy and the film formation material is smaller than the adhesion force between the film formation region having a large surface energy and the film formation material, the film formation material is applied from the release layer 114 to the film formation region. Easy to transfer to. Note that the light absorption layer 113 may also serve as the separation layer 114. It is preferable that the light absorption layer 113 also serves as the separation layer 114 because the types of materials included in the deposition substrate can be reduced and the processing steps can be shortened. The release layer 114 may be made of the same material as the heat insulating layer.

The film forming material is a material for forming a film on the film formation substrate. Any film forming material can be used regardless of an organic compound or an inorganic compound as long as a film can be formed from a film formation substrate to a film formation substrate.

As a film-forming material, for example, an organic compound such as a light-emitting material or a carrier transport material that forms an EL layer, a carrier transport layer or a carrier injection layer that constitutes an EL layer, and an electrode of a light-emitting element are used. Inorganic compounds such as metal oxides, metal nitrides, metal halides, and simple metals can also be used. Note that details of the vapor-depositable material for forming the EL layer will be described in detail in Embodiment 5; therefore, the description thereof will be omitted here.

The material layer 160 may include a plurality of materials. The material layer 160 may be a single layer or a plurality of layers may be stacked.

Next, using the flow chart shown in FIG. 2 and the cross-sectional view of the film formation substrate 150 shown in FIG. A process of forming a film on the film substrate will be described.

First, in the film formation substrate film formation step, the material layer 160 is formed on the first surface of the film formation substrate 150. Next, in the first film formation step, the material layer 160 formed over the first region 151 is formed on the first deposition target substrate 210. Subsequently, in the second film formation step, the material layer 160 formed over the second region 152 is formed on the second deposition target substrate 220, and in the third film formation step, the third layer A material layer 160 formed over the region 153 is formed over the third deposition target substrate 230. Then, the film-forming substrate 150 that has completed the third film-forming process is regenerated in the regenerating process, and is again put into the film-forming substrate forming process. According to this embodiment in which the film formation substrate can be regenerated, the production cost of the film formation substrate per film formation substrate can be suppressed. Details of each step will be described next.

The deposition substrate deposition process is a process of depositing the material layer 160 on at least the first region, the second region, and the third region of the deposition substrate 150. In this embodiment mode, the metal mask 200 is overlaid and masked on the margin 154 of the first surface of the deposition substrate 150. Next, a deposition material is deposited on the deposition substrate 150 through the metal mask 200, so that the deposition substrate 150 having the material layer 160 is manufactured. A cross-sectional view of this state is shown in FIG. In this embodiment, a metal mask is used in combination, but it is not always necessary to use a metal mask.

Note that as a method for forming the material layer 160 on the deposition substrate 150, various methods can be given in addition to the vacuum evaporation method. For example, a wet coating method such as spin coating, spray coating, ink jet, dip coating, casting, die coating, roll coating, blade coating, bar coating, gravure coating, or printing is used. Can do. Further, a sputtering method which is a dry method, or the like can be used.

In the case where the material layer 160 is formed by a wet method, a desired vapor deposition material may be dissolved or dispersed in a solvent to prepare a solution or a dispersion. The solvent is not particularly limited as long as it can dissolve or disperse the vapor deposition material and does not react with the vapor deposition material. For example, halogen solvents such as chloroform, tetrachloromethane, dichloromethane, 1,2-dichloroethane, or chlorobenzene, ketone solvents such as acetone, methyl ethyl ketone, diethyl ketone, n-propyl methyl ketone, or cyclohexanone, benzene, toluene, or Aromatic solvents such as xylene, ethyl acetate, n-propyl acetate, n-butyl acetate, ethyl propionate, γ-butyrolactone, ester solvents such as diethyl carbonate, ether solvents such as tetrahydrofuran or dioxane, dimethylformamide Alternatively, an amide solvent such as dimethylacetamide, dimethyl sulfoxide, hexane, water, or the like can be used. Moreover, you may mix and use these solvent multiple types. By using the wet method, the utilization efficiency of the material can be increased and the manufacturing cost can be reduced.

FIG. 4A shows a first film formation step in which the material layer 160 is formed from the first region 151 of the film formation substrate 150 to the first film formation region 211 of the first film formation substrate 210. ) To (D).

First, the first surface of the film formation substrate 150 over which the material layer 160 is formed and the film formation surface of the first film formation substrate 220 are arranged to face each other. Next, the position of the first film formation region 211 of the first film formation substrate 210 is aligned with the first region 151 of the film formation substrate 150. Note that the first region 151 a is a part of the first region 151, and the first film formation region 211 a is a part of the first film formation region 211. FIG. 4A illustrates the first region 151a and the deposition region 211a in a state where the deposition substrate 150 and the deposition substrate 210 are aligned.

In order to align the positions of the film formation substrate 150 and the first film formation substrate 210, it is preferable to provide an alignment marker on at least one of the film formation substrate 150 and the film formation substrate 210. . In alignment, either the film formation substrate 150 or the film formation substrate 210 may be moved, or both may be moved.

Next, the material layer 160 formed in the first region 151 is brought close to the first film formation region 211 of the first film formation substrate 210 and subjected to pressure bonding. Cross-sectional views in this state are shown in FIGS.

Further, when the film formation substrate 150 is peeled off from the first film formation substrate 210, the material layer 160 formed in the first region 151 is formed in the first film formation region 211, and the material layer is formed. 161 is formed. Note that the material layer 161 a is a part of the material layer 161. In addition, the first region 151a of the deposition substrate 150 that has completed the first deposition process loses the material layer 160 and is exposed. A cross-sectional view of this state is shown in FIG.

Next, a second film formation step in which the material layer 160 is formed from the second region 152 of the film formation substrate 150 to the first film formation region 221 of the second film formation substrate 220 is illustrated. 5 (A) to (D) will be used for explanation.

The first surface of the film formation substrate 150 after the first film formation step and the film formation surface of the second film formation substrate 220 are arranged to face each other. Next, the position of the first film formation region 221 of the second film formation substrate 220 is aligned with the second region 152 of the film formation substrate 150. Note that the second region 152 a is a part of the second region 152, and the deposition region 221 a is a part of the first deposition region 221. FIG. 5A illustrates the second region 152a and the deposition region 221a in a state in which the positions are aligned.

Next, the material layer 160 formed in the second region 152 is brought close to the first film formation region 221 of the second film formation substrate 220. At this time, since the deposition material that has been deposited in the first region 151 through the first deposition step has already been lost, the material layer is formed from the first region 151 onto the second deposition target substrate 220. 160 is not deposited. A cross-sectional view of this state is shown in FIG.

Next, light is irradiated from the second surface side of the deposition substrate 150 toward the first surface. Light transmitted through the light-transmitting support substrate 100 is absorbed by the light absorption layer 113 in the second region 152, and the light absorption layer 113 generates heat. The material layer 160 formed over the second region 152 is selectively heated by heat generation of the light absorption layer 113, and the material layer 162 is formed in the first film formation region 221 of the second film formation substrate 220. Is deposited. Note that the material layer 162 a is part of the material layer 162. A cross-sectional view of this state is shown in FIG.

Note that the second film formation step is preferably performed in a reduced-pressure atmosphere. The reduced-pressure atmosphere can be obtained by evacuating the film forming chamber so that the degree of vacuum is 1 Pa or less, preferably about 10 ⁻² Pa to 10 ⁻⁶ Pa.

Next, the deposition substrate 150 is separated from the second deposition target substrate 220. Note that the second region 152 of the deposition substrate 150 that has completed the second deposition process loses the material layer 160 and is exposed. A cross-sectional view of this state is shown in FIG.

Various light sources can be used as a light source for irradiating the light absorption layer 113 in the second film formation step. For example, the laser light source may be a gas laser such as an Ar laser, a Kr laser, or an excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) ) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ and one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as dopants. Lasers oscillated from one or more of lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, copper vapor lasers or gold vapor lasers can be used. In addition, when a solid-state laser whose laser medium is solid is used, there are advantages that a maintenance-free state can be maintained for a long time and output is relatively stable.

Further, as a light source other than the laser light, a discharge lamp such as a xenon lamp or a metal halide lamp, or a heating lamp such as a halogen lamp or a tungsten lamp can be used. These light sources may be used as flash lamps (for example, xenon flash lamps, krypton flash lamps, etc.). The flash lamp can irradiate a large area repeatedly in a short time (0.1 to 10 milliseconds) and can irradiate a large area efficiently and uniformly regardless of the area of the deposition substrate. In addition, heating of the deposition substrate can be controlled by changing the length of time for light emission. Moreover, since the flash lamp has a long life and low power consumption during light emission standby, the running cost can be kept low.

In addition, it is preferable that it is infrared light (wavelength 800nm or more) as light to irradiate. By being infrared light, the vapor deposition material can be efficiently heated through the light absorption layer 113.

FIG. 6A illustrates a third film formation step in which the material layer 160 is formed from the third region 153 of the film formation substrate 150 to the first film formation region 231 of the third film formation substrate 230. It demonstrates using thru | or (D).

The first surface of the film formation substrate 150 that has completed the first and second film formation steps and the film formation surface of the third film formation substrate 230 are arranged to face each other. Next, the position of the first film formation region 231 of the third film formation substrate 230 is aligned with the third region 153 of the film formation substrate 150. Note that the third region 153 a is a part of the third region 153, and the film formation region 231 a is a part of the first film formation region 231. FIG. 6A illustrates the third region 153a and the deposition region 231a in a state where the positions are aligned.

Next, the material layer 160 formed in the third region 153 is brought close to the first film formation region 231 of the third film formation substrate 230. At this time, since the material layer 160 formed in the first region 151 through the first film formation step is already lost, the material layer 160 is formed on the third deposition target substrate 230 from the first region 151. The material does not form a film. A cross-sectional view of this state is shown in FIG.

Next, the deposition substrate 150 is heated from the second surface side. The material layer 160 remaining on the deposition substrate is heated, and the material layer 162 is deposited on the third deposition target substrate 230. Note that the material layer 162 a is part of the material layer 162. A cross-sectional view of this state is shown in FIG.

Note that the third film formation step is preferably performed in a reduced-pressure atmosphere. The reduced-pressure atmosphere can be obtained by evacuating the film forming chamber so that the degree of vacuum is 5 × 10 ⁻³ Pa or less, preferably in the range of about 10 ⁻⁴ Pa to 10 ⁻⁶ Pa.

Further, when the film formation substrate 150 is peeled off from the third film formation substrate 230, the film formation substrate 230 in which the material layer 163 is formed in the film formation region 231 is obtained. Note that the third region 153 of the deposition substrate 150 that has completed the third deposition process loses the material layer 160 and is exposed. A cross-sectional view of this state is shown in FIG.

Since there is no material that can be deposited on the deposition substrate 150 after the third deposition step, it can be re-entered into the deposition substrate deposition step as it is. In order to prevent this, cleaning and inspection are carried out in a regeneration process, and thereafter, they are put into a film-forming substrate film forming process.

As described above, when a material layer is formed on a film formation substrate having three regions having different film formation characteristics, and the material layer is formed on three film formation substrates using three different film formation methods, The waste of the layer can be reduced.

(Embodiment 2)
In this embodiment, one embodiment of a method for manufacturing a full-color display device using the deposition substrate described in the above embodiment will be described with reference to FIGS. Here, an example of a light emitting device in which light emitting elements of three colors are repeatedly arranged will be described. Note that the red EL layer, the green EL layer, and the blue EL layer in this embodiment are one embodiment of the EL layer, and each is provided between the first electrode layer and the second electrode layer to form a light-emitting element. , A red light emitting element, a green light emitting element or a blue light emitting element. The red EL layer, the green EL layer, and the blue EL layer may be a single layer or a layer in which a plurality of layers are stacked.

First, a deposition substrate 150R in which a red EL layer is formed as a material layer over the same deposition substrate as that described in Embodiment Mode 1 is manufactured. Similarly, a film formation substrate 150G having a green EL layer as a material layer and a film formation substrate 150B having a blue EL layer as a material layer are manufactured. Three deposition substrates having different material layers are shown on the left side of FIG.

In addition, three deposition target substrates (210, 220, 230) provided with a first electrode layer are prepared. Note that an insulator serving as a partition wall covering an end portion of the first electrode layer is preferably provided. By covering the end of the first electrode layer with a partition wall, a short circuit between the first electrode layer and the second electrode layer can be prevented. The region to be a light emitting region corresponds to a part of the first electrode layer, that is, a region exposed without overlapping with the insulator.

Next, a material layer to be a red EL layer is formed from the first deposition substrate 150R in the first region of the three deposition target substrates. Specifically, in the same manner as in the first film formation step described in Embodiment 1, the first region of the first film formation substrate 150R and the first film formation target of the first film formation substrate 210 are used. The position of the film formation region is aligned, and a material layer R1 to be a red EL layer in the first region is formed on the first deposition target substrate by pressure bonding.

Next, in a manner similar to the second film formation step described in Embodiment 1, the second region of the first film formation substrate 150R and the first film formation of the second film formation substrate 220 are performed. The regions are aligned, light is irradiated from the second surface side of the first film formation substrate 150R toward the first surface, and the material layer R2 to be the red EL layer in the second region is applied to the second layer. A film is formed on the deposition target substrate 220.

Further, similarly to the third film formation step described in Embodiment 1, the third region of the first film formation substrate 150R and the first film formation region of the third film formation substrate 230 are used. Are aligned and heated from the second surface side of the first film formation substrate 150R to form a material layer R3 to be a red EL layer in the third region on the third film formation substrate 230. . Through the above steps, three deposition target substrates on which a red light emitting element EL layer is formed in the first region are obtained.

Next, a material that becomes a green EL layer from the second deposition substrate 150G in the second region of the three deposition target substrates on which the red light-emitting element EL layers are deposited in the first region. Deposit layers. Three sheets in which a red light emitting element EL layer is formed in the first region and a green light emitting element EL layer is formed in the second region through the same process as the first film formation substrate 150R A film formation substrate is obtained.

Finally, in the third region of the three deposition substrates in which the EL layer for the red light emitting element is formed in the first region and the EL layer for the green light emitting element is formed in the second region, A material layer to be a blue EL layer is formed from the third deposition substrate 150B. Through the same process as the first film-formation substrate 150R, a red light emitting element EL layer is formed in the first region, a green light emitting element EL layer is formed in the second region, and a third region is formed in the third region. A deposition target substrate 210 (R1 + G1 + B1), a deposition target substrate 220 (R2 + G2 + B2), and a deposition target substrate 230 (R3 + G3 + B3) on which an EL layer for a blue light emitting element is formed are obtained.

Next, a second electrode layer is formed on the EL layers for the red, green, and blue light-emitting elements formed on the first electrode layers of the three deposition substrates. A full-color display device in which light-emitting elements are repeatedly arranged is manufactured.

The formation of the EL layer is not limited to the order of red, green, and blue. For example, the order of blue, red, and green may be used. Further, as shown in FIG. 7A, the EL layer may be formed in a stripe shape or a rectangular shape. Further, the shape and arrangement of the EL layers are not particularly limited, and the shape of one EL layer may be a polygon, for example, a hexagon. Further, as shown in FIG. 7B, a first EL layer (R) 160R, a second EL layer (G) 160G, and a third EL layer (B) 160B may be provided.

In this manner, a material layer is formed on a deposition substrate having three regions having different deposition characteristics, and the material layer is distributed to the three deposition substrates using three different deposition methods. Then, waste of the material layer can be reduced. In addition, a light-emitting device in which fine light-emitting elements having different emission colors are repeatedly arranged can be formed.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 3)
In this embodiment, an example of a film formation apparatus that can manufacture a light-emitting device will be described. FIG. 8 and FIG. 9 are schematic views of cross sections of the film forming apparatus according to this embodiment.

FIGS. 8A and 8B show an example of a face-down type film formation apparatus in which the film formation surface of the film formation substrate is downward, and FIG. FIG. 9A shows an example of a film apparatus, and FIG. 9B shows an example of a film formation apparatus of a vertical substrate type. In this specification, making the substrate surface an angle close to perpendicular to the horizontal plane (in the range of 70 degrees to 110 degrees) is referred to as “vertical placement of the substrate”.

In the case of the face-up method, a glass substrate with a large area that is easily bent can be placed on a flat table or supported by a plurality of pins, so that the substrate is less likely to bend, causing film thickness unevenness, and uniform over the entire surface of the substrate. It is suitable for a film forming apparatus capable of forming a film having a thickness. In addition, the vertical substrate system not only suppresses deflection, but also facilitates conveyance and is suitable for conveyance of a large-area glass substrate.

The film formation chamber 801 is a vacuum chamber and is connected to another processing chamber by a first gate valve 802 and a second gate valve 803. In the film formation chamber 801, a film formation substrate support mechanism that is a film formation substrate support means 804, a film formation substrate support mechanism that is a film formation substrate support means 805, a light source 810, and a film formation At least a film formation substrate heating mechanism which is a substrate heating means 806. 8 and 9 illustrate a deposition substrate 807, a material layer 808, and a deposition target substrate 809.

Although not shown, the film formation substrate heating means 806 is movable and can be inserted between the film formation substrate 807 and the light source 810 and taken out. 9B has a first gate valve (not shown) on the wall surface of the film formation chamber on the front side of the paper surface and corresponds to the back side of the paper surface. A second gate valve (not shown) is provided on the wall surface of the membrane chamber.

The light source 810 may be any heating means that can perform uniform heating in a short time. In addition, the light source 810 and the deposition substrate are preferably opposed to each other over a wide area so that uniform heating is performed. For example, a laser oscillator or a lamp may be used.

For example, the laser light source may be a gas laser such as an Ar laser, a Kr laser, or an excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) ) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ and one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as dopants. Lasers oscillated from one or more of lasers, glass lasers, ruby lasers, alexandrite lasers, Ti: sapphire lasers, copper vapor lasers or gold vapor lasers can be used. In addition, when a solid-state laser whose laser medium is solid is used, there are advantages that a maintenance-free state can be maintained for a long time and output is relatively stable.

For example, as the lamp, a discharge lamp such as a xenon lamp or a metal halide lamp, or a heating lamp such as a halogen lamp or a tungsten lamp can be used as a light source. These light sources may be used as flash lamps (for example, xenon flash lamps, krypton flash lamps, etc.).

The flash lamp can irradiate a large area repeatedly in a short time (0.1 to 10 milliseconds) and can irradiate a large area efficiently and uniformly regardless of the area of the deposition substrate. In addition, heating of the deposition substrate can be controlled by changing the length of time for light emission. Moreover, since the flash lamp has a long life and low power consumption during light emission standby, the running cost can be kept low.

8A illustrates an example in which the light source 810 is installed in the film formation chamber 801. A part of the inner wall of the film formation chamber is used as a light-transmitting member, and the light source 810 is provided outside the film formation chamber. May be arranged. When the light source 810 is disposed outside the film formation chamber 801, maintenance such as replacement of the light bulb of the light source 810 is facilitated.

Note that a method of heating with a lamp as the light source 810 is suitable for a large-area glass substrate. In addition, in order to reduce the influence of heat from the light source during standby to the material layer 808 on the film formation substrate, heat insulation is provided between the light source 810 and the film formation substrate during standby (before the film formation process). An openable / closable shutter may be provided.

The film formation substrate heating unit 806 may be any unit that uniformly heats the film formation substrate 807. For example, a metal plate whose temperature is uniformly increased may be brought into contact with the second surface of the film formation substrate 807 by refluxing the heat medium or by incorporating a heater such as a silicon rubber heater or a Peltier element. good.

Alternatively, a substrate that converts light into heat can be used as the deposition substrate heating unit 806. When the substrate that converts light into heat is in close contact with the second surface of the deposition substrate 807 and the substrate that converts light into heat is heated with the light source 810, the deposition substrate 807 can be heated. As the substrate that converts light into heat, for example, a glass substrate on which titanium is formed on the entire surface can be used.

FIG. 8B illustrates an example of a film formation apparatus provided with a mechanism for adjusting the temperature of the deposition target substrate 809. In FIG. 8B, description is made using the same reference numerals for portions common to FIG. In FIG. 8B, a tube 811 through which a heat medium flows is provided on the deposition target substrate supporting means 805. Note that the tube 811 has a mechanism that can follow the vertical movement of the deposition target substrate supporting unit 805.

By depositing a coolant as a heat medium through the tube 811, the deposition target substrate supporting unit 805 can be a cold plate. For example, a liquid refrigerant such as refrigerant gas, water, or silicon oil can be used. Further, a heat medium for heating may be passed through the tube 811. Note that a Peltier element, a heater, or the like may be provided in the deposition target substrate supporting unit 805 as a unit for adjusting the temperature of the deposition target substrate 809.

A film formation apparatus including a mechanism for adjusting the temperature of the deposition target substrate 809 is useful when stacking different material layers. For example, when the second layer is stacked on the first layer that easily sublimes the deposition target substrate, if the high-temperature deposition substrate approaches the first layer that easily sublimes, the first layer May sublimate. If the film formation apparatus has a mechanism for adjusting the temperature of the deposition target substrate 809, the second layer can be stacked while suppressing sublimation of the first layer that is easily sublimated by the cooling mechanism. Further, if a heating mechanism is used, warpage of the substrate can be suppressed.

Next, the operation of the film forming apparatus will be described focusing on the operation of the face-down type film forming apparatus. Other film forming apparatuses will be described with respect to operations that are different from face-down type film forming apparatuses.

A film formation substrate 807 used in the film formation apparatus of this embodiment is the film formation substrate exemplified in Embodiment 1, and includes a first region to a third region. Note that there is no particular limitation on the shape of the deposition substrate 807.

In this embodiment, the operation of the deposition apparatus is described using the deposition substrate 807 and three deposition substrates (809a, 809b, and 809c). Note that a material layer 808 is formed on the first surface of the deposition substrate 807. As a method for forming the material layer 808, a method similar to the method described in Embodiment Mode 1 such as a dry method or a wet method can be exemplified, and the wet method is particularly preferable because it can be easily manufactured. As the wet method, for example, a spin coating method, a printing method, an ink jet method, or the like can be used.

First, the film formation substrate 807 is carried into the film formation chamber 801 with the surface on which the material layer 808 is formed facing upward, and is fixed to the film formation substrate support mechanism. Next, the first deposition substrate 809a is carried into the deposition chamber 801, and the surface on which the material layer 808 of the deposition substrate 807 is formed, and the deposition surface of the first deposition substrate 809a, The first film formation substrate 809a is fixed to the film formation substrate support mechanism so that the two face each other.

The film forming substrate support mechanism and the film formation substrate support mechanism have a moving mechanism that can move with high accuracy in the vertical direction and the same in-plane direction. The positions of the film formation substrate 807 and the first film formation substrate 809a are aligned using the film formation substrate support mechanism, the film formation substrate support mechanism, and the marker. Note that the state in which the positions are aligned at this stage refers to a state in which, for example, the first region of the deposition substrate overlaps with the first transfer region of the first deposition target substrate 809a.

Next, the film formation substrate support mechanism moves the film formation substrate support means 805 in a direction perpendicular to the substrate, so that the substrate distance d between the film formation substrate 807 and the first film formation substrate 809a is a distance d. Move closer to ₁ . 8 shows an example in which the deposition substrate support mechanism is fixed and the deposition target substrate support mechanism is moved. However, the deposition substrate support mechanism is moved and the deposition target substrate support mechanism is fixed. It is good also as a structure. Further, both the film formation substrate support mechanism and the film formation substrate support mechanism may be moved.

In addition, an alignment mechanism such as a CCD may be provided in the film formation chamber 801 in order to perform precise alignment and measurement of the distance d. Further, a temperature sensor for measuring the inside of the film formation chamber 801, a humidity sensor, or the like may be provided.

In the first deposition step, the distance d ₁ is the surface of the material layer 808 formed on the first region of the deposition substrate 807 and the first deposition region of the first deposition substrate 809a. It is defined by the distance from the surface of Of course, any layer on the first deposition target substrate 809a (e.g., an insulating layer which functions as a conductive layer and the partition wall that serves as an electrode) is being formed, the distance d ₁ is a first film It is defined by the distance between the surface of the material layer 808 on the substrate 807 and the surface of the layer formed over the first deposition target substrate 809a, that is, the deposition surface.

In the first film formation step, the first film formation region of the first film formation substrate 809a is pressed against the first region of the first film formation substrate 807 below the sublimation temperature. After that, the first film formation substrate 807 and the first film formation substrate 809a are peeled off, and a material layer is formed in the first film formation region.

The first deposition target substrate 809 a on which the material layer is formed is carried out of the deposition chamber 801, and the second deposition target substrate 809 b is carried into the deposition chamber 801.

In the second film formation step, the film formation substrate 807 and the second film formation substrate are formed in the same manner as in the first film formation step by using the film formation substrate support mechanism, the film formation substrate support mechanism, and the marker. Align position 809b. Note that the state in which the positions are aligned at this stage refers to a state in which, for example, the second region of the deposition substrate and the first transfer region of the second deposition substrate 809b overlap.

Next, the film formation substrate support mechanism moves the film formation substrate support means 805 in a direction perpendicular to the substrate, so that the substrate distance d between the film formation substrate 807 and the second film formation substrate 809b is a distance d. Move closer to ₂ . And the surface of the second distance in the film forming step d ₂ is the second formed on a region material layer 808 of the deposition substrate 807, the second deposition target region of the surface of the deposition substrate 809b Define by distance. Here, the distance d ₂ is larger than the step between the first region and the second region of the film formation substrate 807 and 20 μm or less, preferably from the step between the first region and the second region of the film formation substrate 807. It is larger than 10 μm, more preferably larger than the step between the first region and the second region of the film-forming substrate 807 and smaller than 5 μm.

Note that if the second deposition target substrate 809b is a hard material such as a quartz substrate and hardly deforms (warps, warps, etc.), the first region of the deposition target substrate 807 is the second deposition target substrate. The distance when contacting 809b can be reduced as the lower limit.

Next, the film formation substrate heating unit 806 is extracted from between the film formation substrate 807 and the light source 810, and light is irradiated from the light source 810 toward the second surface of the film formation substrate 807. Accordingly, the material layer 808 formed in the second region of the first film-formation substrate 807 in a short time is heated, and the film-formation surface of the second film-formation substrate 809b disposed to face the material layer 808. A film is formed.

The second deposition target substrate 809 b on which the material layer is formed is carried out from the deposition chamber 801, and the third deposition target substrate 809 c is carried into the deposition chamber 801.

Again, using the film formation substrate support mechanism, the film formation substrate support mechanism, and the markers, the positions of the film formation substrate 807 and the third film formation substrate 809c are aligned in the same manner as in the first film formation step. Note that the state in which the positions are aligned at this stage refers to a state in which, for example, the third region of the deposition substrate and the first transferred region of the third deposition target substrate 809c overlap.

Next, the film formation substrate support mechanism moves the film formation substrate support means 805 in a direction perpendicular to the substrate, and the substrate distance d between the first film formation substrate 807 and the third film formation substrate 809c. close to but a distance d _3. The distance d ₃ is defined as the distance between the third and the region on the forming material layer 808 of the surface, the deposition region of the surface of the deposition target substrate 809c of the first deposition substrate 807. Here, the distance d ₃ is larger than the step between the first region and the third region of the film formation substrate 807 and 20 μm or less, preferably larger than the step between the first region and the third region of the film formation substrate 807. The thickness is 10 μm or less, more preferably 5 μm or less, which is larger than the step between the first region and the third region of the deposition substrate 807.

Next, the film formation substrate heating unit 806 is moved between the film formation substrate 807 and the light source 810 and is in close contact with the second surface of the film formation substrate 807. Next, the material layer 808 remaining on the film formation substrate 807 is heated by using the film formation substrate heating unit 806 to form a film on the film formation surface of the third film formation substrate 809c arranged to face the material layer 808. To do.

The third deposition target substrate 809 c on which the material layer is formed and the deposition substrate 807 that has lost all the material layers 808 are carried out of the deposition chamber 801.

According to this embodiment, it is possible to realize a small film forming apparatus having a chamber capacity that is significantly smaller than that of a conventional vapor deposition apparatus. In manufacturing the light-emitting device which is one embodiment of the present invention, the material layer of the deposition substrate can be easily formed by a wet method.

Further, since the conventional vapor deposition apparatus stops the film formation substrate and forms a film, a substrate rotation mechanism is unnecessary, and it is suitable for film formation on a glass substrate having a large area which is easily broken.

Further, since the material layer 808 on the deposition substrate is deposited as it is, a film thickness monitor can be omitted. Therefore, the film forming process can be fully automated, and throughput can be improved. In addition, the deposition material can be prevented from adhering to the inner wall of the film formation chamber, and the film formation apparatus can be easily maintained.

In addition, a plurality of deposition apparatuses described in this embodiment can be provided to be a multi-chamber deposition apparatus. Of course, a combination with a film forming apparatus of another film forming method is also possible. Alternatively, an in-line film deposition apparatus can be obtained by arranging a plurality of the film deposition apparatuses described in this embodiment in series.

In addition, when the manufacturing method described in this embodiment mode is applied, a light-emitting layer included in the light-emitting element can be easily formed, and a light-emitting device including the light-emitting element can be easily manufactured. In addition, by using the deposition substrate which is one embodiment of the present invention, the light-emitting layer can be easily formed, and thus the light-emitting device can be easily manufactured. In addition, since a fine pattern can be formed, a high-definition light-emitting device can be obtained. In addition, by applying the present invention, not only laser light but also a lamp heater with a large amount of heat can be used as a light source. Furthermore, since the material layer can be distributed without waste from one deposition substrate to three deposition substrates, the utilization efficiency of the material layer can be improved. Thus, the manufacturing cost of the light-emitting device can be reduced.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 4)
In this embodiment, as an example of a film formation apparatus that can manufacture a light-emitting device, a film formation apparatus that heats a light absorption layer of a film formation substrate using a laser will be described.

FIGS. 10A and 10B illustrate one mode of a device in which a laser is used as a light source in a face-up film formation apparatus in which a film formation surface of a deposition target substrate is on the upper side.

As shown in FIG. 10B, laser light is output from a laser oscillation device 1103 (YAG laser device, excimer laser device, etc.), and a first optical system 1104 for making the beam shape rectangular and for shaping. The second optical system 1105 and the third optical system 1106 for making parallel rays pass, and the optical path is bent in a direction perpendicular to the film formation substrate 807 by the reflection mirror 1107. After that, the second surface of the deposition substrate 807 is irradiated with the laser beam.

Note that the position alignment mechanism 1108 aligns the deposition substrate 807 and the deposition target substrate 809.

The shape of the laser spot applied to the deposition substrate 807 is preferably rectangular or linear, and specifically, a rectangular shape having a short side of 1 mm to 5 mm and a long side of 10 mm to 50 mm. do it. In the case of using a large-area substrate, it is preferable to set the long side of the laser spot to 20 cm to 100 cm in order to shorten the processing time. Further, a plurality of laser oscillation devices and optical systems shown in FIG. 10 may be installed to process a large area substrate in a short time. Specifically, the processing area of one substrate may be shared by irradiating laser beams from a plurality of laser oscillation devices.

Note that FIG. 10 is an example, and the positional relationship between the optical systems and electro-optical elements arranged in the optical path of the laser light is not particularly limited. For example, when the laser oscillation device 1103 is disposed above the film formation substrate 807 and the laser light emitted from the laser oscillation device 1103 is disposed in a direction perpendicular to the main plane of the film formation substrate 807, the reflection mirror Does not have to be used. The optical system may use a condensing lens, a beam expander, a homogenizer, a polarizer, or the like, or a combination thereof. Moreover, you may combine a slit as an optical system. Note that all the structures illustrated in FIG. 10B may be provided in the vacuum chamber.

The irradiation area of the laser beam is appropriately scanned two-dimensionally to irradiate a wide area of the film formation substrate 807. In order to scan, the irradiation region of the laser beam and the substrate are relatively moved. In this embodiment mode, scanning is performed using a reflection mirror 1107 connected to a feed mechanism 1109. The control device 1117 preferably controls the feed mechanism 1109 and the laser oscillation device 1103 in synchronization.

A method for forming a material layer from one deposition substrate 807 to three deposition substrates (809a, 809b, and 809c) using the deposition apparatus of this embodiment will be described. Note that in this embodiment, a method of first forming a material layer in the second region, then forming a material layer in the first region, and finally forming a film forming material in the third region. The first method is to form a material layer in the first region, then form a material layer in the second region, and finally form a material in the third region. Also good.

First, the film formation substrate 807 is carried into the film formation chamber 801 with the surface on which the material layer 808 is formed facing downward, and is fixed to the film formation substrate support mechanism. Next, the first deposition substrate 809a is carried into the deposition chamber 801, and the surface on which the material layer 808 of the deposition substrate 807 is formed, and the deposition surface of the first deposition substrate 809a, The first film formation substrate 809a is fixed to the film formation substrate support mechanism so that the two face each other. Note that the deposition substrate 807 includes the first to third regions described in Embodiment 1, and the light absorption layer and the light reflection layer are formed using a material that can withstand laser light irradiation.

The film forming substrate support mechanism and the film formation substrate support mechanism have a moving mechanism that can move with high accuracy in the vertical direction and the same in-plane direction. The positions of the film formation substrate 807 and the first film formation substrate 809a are aligned using the film formation substrate support mechanism, the film formation substrate support mechanism, and the marker. Note that the state in which the positions are aligned at this stage refers to a state in which, for example, the second region of the deposition substrate and the first transfer region of the second deposition target substrate 809a overlap.

Next, the film formation substrate support mechanism moves the film formation substrate support means 805 in a direction perpendicular to the substrate, so that the substrate distance d between the film formation substrate 807 and the first film formation substrate 809a is a distance d. Move closer to ₂ . The distance d ₂ in the second deposition step is the distance between the surface of the material layer 808 formed on the second region of the deposition substrate 807 and the surface of the deposition region of the first deposition substrate 809a. Define by distance. Here, the distance d ₂ is larger than the step between the first region and the second region of the film formation substrate 807 and 20 μm or less, preferably from the step between the first region and the second region of the film formation substrate 807. It is larger than 10 μm, more preferably larger than the step between the first region and the second region of the film-forming substrate 807 and smaller than 5 μm. Note in the present embodiment, since the closer the second region in a state where the material layer 808 is formed on the first region in the first deposition target substrate 809a, a distance d ₂ ranges first It is assumed that the material layer 808 in the region is in a range not in contact with the first deposition target substrate 809a.

Next, light is emitted from the laser oscillation device 1103 toward the second surface of the film formation substrate 807 toward the second surface of the film formation substrate 807 where the material layer 808 is not formed. Thus, the material layer 808 formed in the second region of the film formation substrate 807 is heated in a short time, and film formation is performed on the film formation surface of the second film formation substrate 809a disposed to face the material layer 808. To do. Note that when the light is emitted from the laser oscillation device 1103, the film formation substrate heating unit 806 is moved as illustrated in FIG. 10A and is retracted from the optical path of the laser light.

The first deposition target substrate 809a on which the material layer 808 is formed is unloaded from the deposition chamber 801, and the second deposition target substrate 809b is loaded.

In the second film formation step, the film formation substrate 807 and the second film formation substrate are formed in the same manner as in the first film formation step by using the film formation substrate support mechanism, the film formation substrate support mechanism, and the marker. Align position 809b. Note that the state of being aligned at this stage refers to a state in which, for example, the first region of the deposition substrate and the first transferred region of the second deposition target substrate 809b overlap.

Next, the film formation substrate support mechanism moves the film formation substrate support means 805 in a direction perpendicular to the substrate, thereby reducing the substrate distance between the film formation substrate 807 and the second film formation substrate 809b. Next, the first film formation region of the second film formation substrate 809 b is pressed against the first region of the film formation substrate 807. After that, the film formation substrate 807 and the first film formation substrate 809b are peeled off to form a film in the first film formation region of the second film formation substrate 809b. Note that when the film formation substrate 807 is deformed by pressure, uniform film formation becomes difficult. Therefore, a film formation substrate heating unit 806 is inserted between the second surface of the film formation substrate 807 and the light source 810. The film formation substrate 807 may be supported from the second surface.

The second deposition target substrate 809b on which the material layer 808 is formed is unloaded from the deposition chamber 801, and the third deposition target substrate 809c is loaded.

Again, using the film formation substrate support mechanism, the film formation substrate support mechanism, and the markers, the positions of the film formation substrate 807 and the third film formation substrate 809c are aligned in the same manner as in the first film formation step. Note that the state in which the positions are aligned at this stage refers to a state in which, for example, the third region of the deposition substrate and the first transferred region of the third deposition target substrate 809c overlap.

Next, the film formation substrate support mechanism moves the film formation substrate support means 805 in a direction perpendicular to the substrate, and the substrate distance d between the first film formation substrate 807 and the third film formation substrate 809c. close to but a distance d _3. The distance d ₃ is defined as the distance between the third and the region on the forming material layer 808 of the surface, the deposition region of the surface of the deposition target substrate 809c of the first deposition substrate 807. Here, the distance d ₃ is larger than the step between the first region and the third region of the film formation substrate 807 and 20 μm or less, preferably larger than the step between the first region and the third region of the film formation substrate 807. The thickness is 10 μm or less, more preferably 5 μm or less, which is larger than the step between the first region and the third region of the deposition substrate 807.

Next, the film formation substrate heating unit 806 is moved between the film formation substrate 807 and the light source 810 and is in close contact with the second surface of the film formation substrate 807. Next, the material layer 808 remaining on the film formation substrate 807 is heated by using the film formation substrate heating unit 806 to form a film on the film formation surface of the third film formation substrate 809c arranged to face the material layer 808. To do.

The third deposition target substrate 809 c on which the material layer is formed and the deposition substrate 807 that has lost all the material layers 808 are carried out of the deposition chamber 801.

Note that the manufacturing apparatus shown in FIG. 10 shows an example of a so-called face-up type film forming apparatus in which the film formation surface of the deposition target substrate faces upward. You can also. In the case where the deposition target substrate is a large-area substrate, a so-called vertical placement apparatus can be used in order to prevent the center of the substrate from being bent due to its own weight.

Further, by providing a cooling means for cooling the deposition target substrate, a flexible substrate such as a plastic substrate can be used as the deposition target substrate.

In addition, a plurality of deposition apparatuses described in this embodiment can be provided to be a multi-chamber deposition apparatus. Of course, a combination with a film forming apparatus of another film forming method is also possible. Alternatively, an in-line film deposition apparatus can be obtained by arranging a plurality of the film deposition apparatuses described in this embodiment in series.

The material layer of the deposition substrate used in this embodiment can be easily formed by a wet method. In addition, when the deposition substrate of this embodiment is used, deposition can be performed on a deposition target substrate without using a film thickness monitor, so that the deposition process can be easily automated and throughput can be improved. it can. Further, it is possible to prevent the deposition material from adhering to the film formation chamber wall, and the maintenance of the film formation apparatus can be simplified.

In addition, since the light-emitting layer included in the light-emitting element can be easily formed using the deposition substrate which is one embodiment of the present invention, manufacturing a light-emitting device including the light-emitting element is also simplified. In addition, since a light-emitting layer having a fine pattern can be formed, a high-definition light-emitting device can be easily manufactured. Furthermore, since a material layer can be formed on one deposition substrate from three deposition substrates, the utilization efficiency of the material layer can be improved. As a result, the manufacturing cost of the light emitting device can be reduced.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 5)
In this embodiment, a method for manufacturing a light-emitting element and a light-emitting device using the film-formation substrate of one embodiment of the present invention will be described.

A structure of a light-emitting element described in this embodiment is illustrated in FIGS. In the light-emitting element illustrated in FIG. 11A, a first electrode layer 302, an EL layer 308 functioning as the light-emitting layer 304, and a second electrode layer 306 are sequentially stacked over a substrate 300. One of the first electrode layer 302 and the second electrode layer 306 functions as an anode, and the other functions as a cathode. The holes injected from the anode and the electrons injected from the cathode are recombined in the light emitting layer 304, and light emission is obtained. In this embodiment mode, the first electrode layer 302 is an electrode functioning as an anode, and the second electrode layer 306 is an electrode functioning as a cathode.

As another structure of the light-emitting element, in addition to the above structure, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer are provided. The hole transport layer is provided between the anode and the light emitting layer. The hole injection layer is provided between the anode and the light emitting layer or between the anode and the hole transport layer. On the other hand, the electron transport layer is provided between the cathode and the light emitting layer. The electron injection layer is provided between the cathode and the light emitting layer, or between the cathode and the electron transport layer. Note that it is not necessary to provide all of the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer.

Specifically, the first electrode layer 302 functioning as an anode, the hole injection layer 322, the hole transport layer 324, the light-emitting layer 304, the electron transport layer 326, the electron injection layer 328, and the cathode are formed over the substrate 300. A structure of a light-emitting element in which the functioning second electrode layer 306 is sequentially stacked is illustrated in FIG.

Note that there is no particular limitation on the layered structure of the EL layer 308, and a substance having a high electron-transport property, a substance having a high hole-transport property, a substance having a high electron-injection property, a substance having a high hole-injectability, A layer including a substance (a substance having a high electron and hole transporting property) and the light-emitting layer may be combined as appropriate.

As the substrate 300, a substrate having an insulating surface or an insulating substrate is used. Specifically, various glass substrates, quartz substrates, ceramic substrates, sapphire substrates and the like used for the electronic industry such as aluminosilicate glass, aluminoborosilicate glass, and barium borosilicate glass can be used.

For the first electrode layer 302 or the second electrode layer 306, various metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used. For example, indium tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide, indium zinc oxide (IZO), oxide containing tungsten oxide and zinc oxide. Indium (IWZO) and the like can be given. These conductive metal oxide films are usually formed by sputtering, but may be formed by applying a sol-gel method or the like. For example, indium oxide-zinc oxide (IZO) can be formed by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) is formed by sputtering using a target containing 0.5 to 5 wt% tungsten oxide and 0.1 to 1 wt% zinc oxide with respect to indium oxide. it can.

In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium ( Pd), or a nitride of a metal material (for example, titanium nitride). Alternatively, aluminum (Al), silver (Ag), an alloy containing aluminum (AlSi), or the like can be used.

In addition, an element belonging to Group 1 or Group 2 of the periodic table, which is a material having a low work function, that is, an alkali metal such as lithium (Li) or cesium (Cs), and magnesium (Mg) or calcium (Ca) Alkaline earth metals such as strontium (Sr), and alloys containing these (aluminum, magnesium and silver alloys, aluminum and lithium alloys), rare earth metals such as europium (Eu), ytterbium (Yb), and the like An alloy containing the same can also be used.

A film of an alkali metal, an alkaline earth metal, or an alloy containing these can be formed using a vacuum evaporation method. An alloy containing an alkali metal or an alkaline earth metal can also be formed by a sputtering method. Further, a silver paste or the like can be formed by an inkjet method or the like. In addition, the first electrode layer 302 and the second electrode layer 306 are not limited to a single layer film and can be formed using a stacked film.

Note that in order to extract light emitted from the light-emitting layer 304 to the outside, one or both of the first electrode layer 302 and the second electrode layer 306 are formed so as to pass light emitted from the light-emitting layer 304. In the case where only the first electrode layer 302 is a light-transmitting electrode, light is extracted from the substrate 300 side through the first electrode layer 302. In the case where only the second electrode layer 306 is a light-transmitting electrode, light is extracted from the side opposite to the substrate 300 through the second electrode layer 306. In the case where each of the first electrode layer 302 and the second electrode layer 306 is a light-transmitting electrode, light passes through the first electrode layer 302 and the second electrode layer 306 and passes through the substrate 300 side and the substrate. It is taken out from both the 300 side and the reverse side.

The light-transmitting electrode is formed using, for example, a conductive material such as indium tin oxide, or silver, aluminum, or the like is formed to have a thickness of several nanometers to several tens of nanometers. Alternatively, a stacked structure of a thin metal film such as silver or aluminum and a thin film using a light-transmitting conductive material such as an ITO film can be used. Note that the first electrode layer 302 or the second electrode layer 306 can be formed by various methods.

The light emitting layer 304 includes a light emitting substance. As the light-emitting substance, for example, a fluorescent compound that emits fluorescence or a phosphorescent compound that emits phosphorescence can be used.

As a phosphorescent compound that can be used for the light-emitting layer, for example, bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) tetrakis ( 1-pyrazolyl) borate (abbreviation: FIr6), bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (III) picolinate (abbreviation: FIrpic), bis [2- (3 ', 5' bistrifluoromethylphenyl) pyridinato-N, C ^{2 '} ] iridium (III) picolinate (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), bis [2- (4', 6'-difluorophenyl) ) Pyridinato-N, C ^{2 ′} ] iridium (III) acetylacetonate (abbreviation: FIr (acac)). Further, as a green light-emitting material, tris (2-phenylpyridinato-N, C ^{2 ′} ) iridium (III) (abbreviation: Ir (ppy) ₃ ), bis (2-phenylpyridinato-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (ppy) ₂ (acac)), bis (1,2-diphenyl-1H-benzimidazolato) iridium (III) acetylacetonate (abbreviation: Ir (pbi) ) ₂ (acac)), bis (benzo [h] quinolinato) iridium (III) acetylacetonate (abbreviation: Ir (bzq) ₂ (acac)), and the like. Further, as yellow light-emitting materials, bis (2,4-diphenyl-1,3-oxazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (dpo) ₂ (acac)), bis [2- (4′-perfluorophenylphenyl) pyridinato] iridium (III) acetylacetonate (abbreviation: Ir (p-PF-ph) ₂ (acac)), bis (2-phenylbenzothiazolate-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (bt) ₂ (acac)) and the like. Further, as the material for orange light emission, tris (2-phenylquinolinato -N, C ^{2 ')} iridium (III) (abbreviation: Ir _{(pq) 3),} bis (2-phenylquinolinato--N, C ^2' ) Iridium (III) acetylacetonate (abbreviation: Ir (pq) ₂ (acac)) and the like. As a red light-emitting material, bis [2- (2′-benzo [4,5-α] thienyl) pyridinato-N, C ^{3 ′} ] iridium (III) acetylacetonate (abbreviation: Ir (btp) ₂ (Acac)), bis (1-phenylisoquinolinato-N, C ^{2 ′} ) iridium (III) acetylacetonate (abbreviation: Ir (piq) ₂ (acac)), (acetylacetonato) bis [2,3 -Bis (4-fluorophenyl) quinoxalinato] iridium (III) (abbreviation: Ir (Fdpq) ₂ (acac)), 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin And organometallic complexes such as platinum (II) (abbreviation: PtOEP). Tris (acetylacetonate) (monophenanthroline) terbium (III) (abbreviation: Tb (acac) ₃ (Phen)), tris (1,3-diphenyl-1,3-propanedionate) (monophenanthroline) europium (III) (abbreviation: Eu (DBM) ₃ (Phen)), tris [1- (2-thenoyl) -3,3,3-trifluoroacetonato] (monophenanthroline) europium (III) (abbreviation: Eu ( Since rare earth metal complexes such as TTA) ₃ (Phen)) emit light from rare earth metal ions (electron transition between different multiplicity), they can be used as phosphorescent compounds.

As a fluorescent compound that can be used for the light emitting layer, for example, N, N′-bis [4- (9H-carbazol-9-yl) phenyl] -N, N′-diphenylstilbene can be used as a blue light emitting material. -4,4'-diamine (abbreviation: YGA2S), 4- (9H-carbazol-9-yl) -4 '-(10-phenyl-9-anthryl) triphenylamine (abbreviation: YGAPA), and the like. As green light-emitting materials, N- (9,10-diphenyl-2-anthryl) -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N- [9,10-bis] (1,1′-biphenyl-2-yl) -2-anthryl] -N, 9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N- (9,10-diphenyl-2-anthryl) -N, N ', N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N- [9,10-bis (1,1'-biphenyl-2-yl) -2-anthryl]- N, N ′, N′-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis (1,1′-biphenyl-2-yl) -N- [4- (9H-carbazole) 9-yl) phenyl] -N- phenyl-anthracene-2-amine (abbreviation: 2YGABPhA), N, N, 9- triphenylamine anthracene-9-amine (abbreviation: DPhAPhA), and the like. In addition, examples of a yellow light-emitting material include rubrene, 5,12-bis (1,1′-biphenyl-4-yl) -6,11-diphenyltetracene (abbreviation: BPT), and the like. As red light-emitting materials, N, N, N ′, N′-tetrakis (4-methylphenyl) tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,13-diphenyl-N, N , N ′, N′-tetrakis (4-methylphenyl) acenaphtho [1,2-a] fluoranthene-3,10-diamine (abbreviation: p-mPhAFD) and the like.

The light-emitting layer 304 can be formed by dispersing a light-emitting substance in a host material. When a light-emitting substance is dispersed in a host material to form the light-emitting layer 304, a concentration quenching phenomenon or a crystallization phenomenon in which the light-emitting substances cause a quenching reaction can be suppressed.

In the case where the light-emitting substance is a fluorescent compound, a substance having a singlet excitation energy (energy difference between a ground state and a singlet excited state) larger than that of the fluorescent compound is preferably used for the host material. In the case of a phosphorescent compound, it is preferable to use a substance having a triplet excitation energy (energy difference between the ground state and the triplet excited state) larger than that of the phosphorescent compound.

As a host material used for the light-emitting layer 304, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), tris (8-quinolinolato) aluminum (III) (abbreviation) : Alq), 4,4′-bis [N- (9,9-dimethylfluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: DFLDPBi), bis (2-methyl-8-quinolinolato) (4 -Phenylphenolato) Aluminum (III) (abbreviation: BAlq), 4,4'-di (9-carbazolyl) biphenyl (abbreviation: CBP), 2-tert-butyl-9,10-di (2- Naphthyl) anthracene (abbreviation: t-BuDNA), 9- [4- (9-carbazolyl) phenyl] -10-phenylanthracene (abbreviation: CzPA), etc. And the like.

As the light-emitting substance dispersed in the host material, the above-described phosphorescent compound or fluorescent compound can be used.

In the case where a layer in which a light-emitting substance is dispersed in a host material is used for the light-emitting layer 304, a layer in which a light-emitting substance and a host material are mixed is used for a material layer formed over the deposition substrate of one embodiment of the present invention. That's fine. Note that as the light-emitting layer, two or more kinds of host materials and a light-emitting substance may be used, or two or more kinds of light-emitting substances and a host material may be used. Two or more kinds of host materials and two or more kinds of luminescent substances may be used.

For example, as the hole injection layer 322, molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used. In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (abbreviation: CuPc), or poly (3,4-ethylenedioxythiophene) / poly (styrenesulfonic acid) (PEDOT / PSS) The hole injection layer can also be formed by a polymer such as.

As the hole-injecting layer 322, a layer containing a substance having a high hole-transport property and a substance showing an electron-accepting property can be used. A layer including a substance having a high hole-transport property and a substance having an electron-accepting property has a high carrier density and an excellent hole-injection property. In addition, by using a layer containing a substance having a high hole transporting property and a substance showing an electron accepting property as a hole injection layer in contact with the electrode functioning as the anode, the work function of the electrode material functioning as the anode can be reduced. Regardless, various metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be used.

Examples of the electron-accepting substance used for the hole injection layer include 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ₄ -TCNQ), chloranil, and the like. Can be mentioned. Moreover, a transition metal oxide can be mentioned. In addition, oxides of metals belonging to Groups 4 to 8 in the periodic table can be given. Specifically, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide are preferable because of their high electron accepting properties. Among these, molybdenum oxide is especially preferable because it is stable in the air, has a low hygroscopic property, and is easy to handle.

As the substance having a high hole transporting property used for the hole injection layer, various compounds such as an aromatic amine compound, a carbazole derivative, an aromatic hydrocarbon, and a high molecular compound (oligomer, dendrimer, polymer, etc.) can be used. . Note that the substance having a high hole-transport property used for the hole-injection layer is preferably a substance having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Hereinafter, substances having a high hole-transporting property that can be used for the hole-injecting layer are specifically listed.

As an aromatic amine compound that can be used for the hole injection layer, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), N, N′— Bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N -Diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4 '-Bis [N- (spiro-9,9'-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: BSPB) or the like can be used. N, N′-bis (4-methylphenyl) (p-tolyl) -N, N′-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4′-bis [N- (4-diphenyl) Aminophenyl) -N-phenylamino] biphenyl (abbreviation: DPAB), 4,4′-bis (N- {4- [N ′-(3-methylphenyl) -N′-phenylamino] phenyl} -N— Phenylamino) biphenyl (abbreviation: DNTPD), 1,3,5-tris [N- (4-diphenylaminophenyl) -N-phenylamino] benzene (abbreviation: DPA3B), and the like.

As a carbazole derivative that can be used for the hole-injection layer, specifically, 3- [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA1) 3,6-bis [N- (9-phenylcarbazol-3-yl) -N-phenylamino] -9-phenylcarbazole (abbreviation: PCzPCA2), 3- [N- (1-naphthyl) -N- ( 9-phenylcarbazol-3-yl) amino] -9-phenylcarbazole (abbreviation: PCzPCN1) and the like.

Examples of carbazole derivatives that can be used for the hole injection layer include 4,4′-di (N-carbazolyl) biphenyl (abbreviation: CBP), 1,3,5-tris [4- (N-carbazolyl) phenyl. ] Benzene (abbreviation: TCPB), 9- [4- (10-phenyl-9-anthryl) phenyl] -9H-carbazole (abbreviation: CzPA), 1,4-bis [4- (N-carbazolyl) phenyl]- 2,3,5,6-tetraphenylbenzene or the like can be used.

Examples of aromatic hydrocarbons that can be used for the hole injection layer include 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 2-tert-butyl. -9,10-di (1-naphthyl) anthracene, 9,10-bis (3,5-diphenylphenyl) anthracene (abbreviation: DPPA), 2-tert-butyl-9,10-bis (4-phenylphenyl) Anthracene (abbreviation: t-BuDBA), 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-diphenylanthracene (abbreviation: DPAnth), 2-tert-butylanthracene (abbreviation: t-BuAnth) ), 9,10-bis (4-methyl-1-naphthyl) anthracene (abbreviation: DMNA), 9,10-bis [2- (1 Naphthyl) phenyl] -2-tert-butyl-anthracene, 9,10-bis [2- (1-naphthyl) phenyl] anthracene, 2,3,6,7-tetramethyl-9,10-di (1-naphthyl) ) Anthracene, 2,3,6,7-tetramethyl-9,10-di (2-naphthyl) anthracene, 9,9′-bianthryl, 10,10′-diphenyl-9,9′-bianthryl, 10,10 '-Bis (2-phenylphenyl) -9,9'-bianthryl, 10,10'-bis [(2,3,4,5,6-pentaphenyl) phenyl] -9,9'-bianthryl, anthracene, Examples include tetracene, rubrene, perylene, 2,5,8,11-tetra (tert-butyl) perylene, and the like. In addition, pentacene, coronene, and the like can also be used. Thus, it is more preferable to use an aromatic hydrocarbon having a hole mobility of 1 × 10 ⁻⁶ cm ² / Vs or more and having 14 to 42 carbon atoms.

Note that the aromatic hydrocarbon that can be used for the hole injection layer may have a vinyl skeleton. As the aromatic hydrocarbon having a vinyl group, for example, 4,4′-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), 9,10-bis [4- (2,2- Diphenylvinyl) phenyl] anthracene (abbreviation: DPVPA) and the like.

In addition, a layer containing a substance having a high hole-transport property and a substance having an electron-accepting property has excellent hole-transport properties as well as hole-injection properties. It may be used as a layer.

The hole transport layer 324 is a layer containing a substance having a high hole transport property, and examples of the substance having a high hole transport property include 4,4′-bis [N- (1-naphthyl) -N -Phenylamino] biphenyl (abbreviation: NPB or α-NPD) and N, N′-bis (3-methylphenyl) -N, N′-diphenyl- [1,1′-biphenyl] -4,4′-diamine (Abbreviation: TPD), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methyl Phenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 4,4′-bis [N- (spiro-9,9′-bifluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: Use aromatic amine compounds such as BSPB) It can be. The substances described here are mainly substances having a hole mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than these substances, any substance that has a property of transporting more holes than electrons may be used. Note that the layer containing a substance having a high hole-transport property is not limited to a single layer, and two or more layers containing the above substances may be stacked.

The electron-transport layer 326 is a layer containing a substance having a high electron-transport property. For example, tris (8-quinolinolato) aluminum (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ). Bis (10-hydroxybenzo [h] quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), quinoline skeleton or benzoquinoline A metal complex having a skeleton can be used. In addition, bis [2- (2-hydroxyphenyl) benzoxazolate] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ)) A metal complex having an oxazole-based or thiazole-based ligand such as ₂ ) can also be used. In addition to metal complexes, 2- (4-biphenylyl) -5- (4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5 -(P-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-biphenylyl) -4-phenyl-5- (4- tert-Butylphenyl) -1,2,4-triazole (abbreviation: TAZ01) bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), and the like can also be used. The substances mentioned here are mainly substances having an electron mobility of 10 ⁻⁶ cm ² / Vs or higher. Note that other than the above substances, any substance that has a property of transporting more electrons than holes may be used for the electron-transport layer. Further, the electron-transport layer is not limited to a single layer, and two or more layers including the above substances may be stacked.

As the electron injection layer 328, an alkali metal compound such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), or the like, or an alkaline earth metal compound can be used. Further, a layer in which a substance having an electron transporting property and an alkali metal or an alkaline earth metal are combined can also be used. For example, Alq containing magnesium (Mg) can be used. Note that it is more preferable to use a layer in which an electron transporting substance is combined with an alkali metal or an alkaline earth metal as the electron injection layer because electron injection from the second electrode layer 306 occurs efficiently.

Note that although FIG. 11 illustrates the structure in which the first electrode layer 302 functioning as an anode is provided on the substrate 300 side, the second electrode functioning as a cathode is provided over the substrate 300 as illustrated in FIG. The electrode layer 306, the EL layer 308, and the first electrode layer 302 functioning as an anode may be sequentially stacked. 12B, over the substrate 300, the second electrode layer 306 functioning as a cathode, the electron injection layer 328, the electron transport layer 326, the light-emitting layer 304, the hole transport layer 324, the holes The injection layer 322 and the first electrode layer 302 functioning as an anode may be stacked in this order.

The light-emitting layer 304, the hole-injection layer 322, the hole-transport layer 324, the electron-transport layer 326, the electron-injection layer 328, the second electrode layer 306, and the EL layer 308 described above are the same as those in Embodiment Mode 1 or Embodiment 1. It can be formed by applying the film formation method shown in Embodiment Mode 2.

In the case of forming the light-emitting element illustrated in FIG. 11A, the substrate 300 provided with the first electrode layer 302 in advance is used as a deposition substrate, and the light-emitting layer 304 is formed over the deposition substrate.

Specifically, three deposition substrates on which a material layer to be the light-emitting layer 304 is formed and three substrates 300 provided with the first electrode layer 302 as a deposition substrate are prepared. Next, in a manner similar to that described in Embodiment 1 or 2, the light-emitting layer 304 is formed over the first electrode layer 302 of the three deposition target substrates from the deposition substrate. Then, the second electrode layer 306 is formed over each light-emitting layer 304 by vapor deposition or sputtering to obtain a target light-emitting element.

In the case of forming the light-emitting element in FIG. 11B, the substrate 300 provided with the first electrode layer 302 in advance is a deposition target substrate, and the procedure for forming each functional layer may be repeated in order.

Specifically, a first film formation substrate on which a material layer to be a hole injection layer 322 is formed, and a second film formation substrate on which a material layer to be a hole transport layer 324 is formed; The third film formation substrate on which the material layer to be the light-emitting layer 304 is formed, the fourth film formation substrate on which the material layer to be the electron transport layer 326 is formed, and the electron injection layer 328 A fifth film formation substrate on which a material layer is formed is prepared. In addition, three substrates 300 provided with the first electrode layer 302 are prepared as deposition substrates.

Next, in a manner similar to the method described in Embodiment 1 or 2, the hole injection layer 322 is formed over the first electrode layer 302 of the three deposition target substrates from the first deposition substrate. A film is formed. Next, a hole transport layer 324 is formed on the hole injection layer 322 from the second film formation substrate. Next, the light emitting layer 304 is formed over the hole transport layer 324 from the third film formation substrate. Next, an electron transport layer 326 is formed over the light-emitting layer 304 from the fourth deposition substrate. Next, an electron injection layer 328 is formed on the electron transport layer 326 from the fifth film formation substrate. Then, the second electrode layer 306 is formed over the electron injection layer 328 by vapor deposition or sputtering, and a target light emitting element is formed over three deposition target substrates.

Note that the hole-injection layer 322, the hole-transport layer 324, the electron-transport layer 326, or the electron-injection layer 328 may be formed using various materials. The material forming each layer may be one type or a plurality of types of composite materials. In the case of using a composite material, a material layer including a plurality of materials may be formed as described above.

Further, each of the hole injection layer 322, the hole transport layer 324, the electron transport layer 326, and the electron injection layer 328 may have a single-layer structure or a stacked structure. For example, the hole transport layer 324 may have a stacked structure including a first hole transport layer and a second hole transport layer. The film formation method described in Embodiment 1 or 2 can also be applied to the electrode layer.

In addition, it is not necessary to use only the film formation method illustrated in Embodiment 1 or 2, and the light-emitting element can be formed by combining the film formation method illustrated in Embodiment 1 or Embodiment 2 with another film formation method. May be formed. Examples of other film forming methods include dry methods such as a vacuum evaporation method, an electron beam evaporation method, and a sputtering method, and wet methods such as an ink jet method and a spin coating method.

According to this embodiment mode, various functional layers including a light emitting layer can be easily formed using the film formation substrate described in Embodiment Mode 1 or Embodiment Mode 2, and a light emitting element is manufactured. it can. In addition, a light-emitting device can be manufactured by arranging the light-emitting elements in a matrix.

Next, an example of a passive matrix light-emitting device manufactured using the deposition substrate described in the above embodiment will be described with reference to FIGS.

A passive matrix type (also referred to as simple matrix type) light emitting device is provided such that a plurality of anodes arranged in stripes (bands) and a plurality of cathodes arranged in stripes are orthogonal to each other. The EL layer is sandwiched between the intersections. Therefore, the pixel corresponding to the intersection between the selected anode (to which voltage is applied) and the selected cathode is turned on.

13A is a diagram illustrating a top view of the pixel portion before sealing, and FIG. 13B is a cross-sectional view taken along the chain line AA ′ in FIG. FIG. 13C is a cross-sectional view taken along −B ′.

An insulating layer 1504 is formed over the substrate 1501 as a base insulating layer. Note that the base insulating layer is not particularly required if it is not necessary. On the insulating layer 1504, a plurality of first electrode layers 1513 are arranged in stripes at regular intervals. A partition 1514 having an opening corresponding to each pixel is provided over the first electrode layer 1513, and the partition 1514 having an opening is formed using an insulating material (photosensitive or non-photosensitive organic material (polyimide, acrylic, , Polyamide, polyimide amide, resist or benzocyclobutene), or SOG film (for example, a silicon oxide film containing an alkyl group)). Note that an opening corresponding to each pixel is a light emitting region 1521.

A plurality of reverse-tapered partition walls 1522 that are parallel to each other and intersect with the first electrode layer 1513 are provided over the partition wall 1514 having an opening. The inversely tapered partition wall 1522 is formed by using a positive photosensitive resin in which an unexposed portion remains as a pattern according to a photolithography method, and adjusting the exposure amount or the development time so that the lower portion of the pattern is etched more. .

FIG. 14 is a perspective view immediately after forming a plurality of parallel reverse tapered partition walls 1522. In addition, the same code | symbol is used for the same part as FIG.

The total height of the partition 1514 having the opening and the reverse tapered partition 1522 is set to be larger than the thickness of the EL layer including the light-emitting layer and the conductive layer to be the second electrode layer. When an EL layer including a light-emitting layer and a conductive layer are stacked over a substrate having the structure illustrated in FIG. 14, the EL layers 1515R and EL including the light-emitting layer separated into a plurality of regions as illustrated in FIG. A layer 1515G, an EL layer 1515B, and a second electrode layer 1516 are formed. Note that the plurality of regions separated from each other are electrically independent. The second electrode layer 1516 is a stripe-shaped electrode extending in a direction intersecting with the first electrode layer 1513 and parallel to each other. Note that an EL layer including a light-emitting layer and a conductive layer are also formed over the reverse-tapered partition 1522; however, the EL layers 1515R, 1515G, and 1515B including the light-emitting layer are separated from the second electrode layer 1516. . Note that in this embodiment, an EL layer is a layer including at least a light-emitting layer, and includes a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, or the like in addition to the light-emitting layer. May be.

Here, an example is shown in which EL layers 1515R, 1515G, and 1515B including a light-emitting layer are selectively formed to form a light-emitting device capable of full-color display capable of obtaining three types (R, G, and B) of light emission. The EL layers 1515R, 1515G, and 1515B including the light emitting layer are formed in stripe patterns parallel to each other. In order to form these EL layers, the deposition method described in Embodiment 1 or 2 may be applied. For example, a first film formation substrate on which a material layer to be a red light emitting layer is formed, a second film formation substrate on which a material layer to be a green light emission layer is formed, and a third film on which a material layer to be a blue light emission layer is formed Each film-forming substrate is prepared. In addition, a substrate provided with the first electrode layer 1513 is prepared as a deposition substrate. Then, the first to third film-formation substrates are disposed so as to face the film-formation substrate as appropriate, and the material layer formed on the film-formation substrate is the method described in Embodiment Mode 1 or Embodiment Mode 2. To form an EL layer including a light-emitting layer.

If necessary, sealing is performed using a sealing material such as a sealing can or a glass substrate for sealing. Here, a glass substrate is used as the sealing substrate, and the substrate and the sealing substrate are bonded together using an adhesive such as a sealing material, and the space surrounded by the adhesive such as the sealing material is hermetically sealed. The sealed space is filled with a filler or a dry inert gas. In order to improve the reliability of the light emitting device, a desiccant or the like may be sealed between the substrate and the sealing material. A very small amount of water is removed by the desiccant, and it is sufficiently dried. In addition, as the desiccant, a substance that absorbs moisture by chemical adsorption, such as an oxide of an alkaline earth metal such as calcium oxide or barium oxide, can be used. In addition, you may use the substance which adsorb | sucks moisture by physical adsorption, such as a zeolite and a silica gel, as another drying material.

However, in the case where a sealing material that covers and contacts the light emitting element is provided and is sufficiently shielded from the outside air, the drying material is not necessarily provided.

Next, FIG. 15 shows a top view of a light emitting module on which an FPC or the like is mounted.

As shown in FIG. 15, in the pixel portion 1601 constituting the image display, the scanning line group and the data line group intersect so as to be orthogonal to each other.

The first electrode layer 1513 in FIG. 13 corresponds to the scanning line 1603 in FIG. 15, the second electrode layer 1516 corresponds to the data line 1602, and the inversely tapered partition 1522 corresponds to the partition 1604. An EL layer including a light emitting layer is sandwiched between the data line 1602 and the scanning line 1603, and an intersection indicated by a region 1605 corresponds to one pixel.

Note that the scan line 1603 is electrically connected to the connection wiring 1608 at a wiring end, and the connection wiring 1608 is connected to the FPC 1609 b through the input terminal 1607. The data line is connected to the FPC 1609a through the input terminal 1606.

Further, if necessary, an optical film such as a polarizing plate or a circular polarizing plate (including an elliptical polarizing plate), a retardation plate (λ / 4 plate, λ / 2 plate), a color filter, etc. is appropriately provided on the exit surface. Also good. Further, an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be performed that diffuses reflected light due to surface irregularities and reduces reflection.

Through the above steps, a passive matrix light-emitting device can be manufactured. By using the deposition substrate described in the above embodiment mode, an EL layer included in the light-emitting element can be easily formed, and a light-emitting device including the light-emitting element can be easily manufactured. In addition, when forming a light emitting layer in which a guest material is dispersed in a host material, complicated control is not required as compared with the case of applying co-evaporation. Furthermore, since the amount of the guest material added can be easily controlled, a film can be easily formed with high accuracy, and a desired emission color can be easily obtained. In addition, since the utilization efficiency of the vapor deposition material can be improved, the cost can be reduced.

In addition, by applying the film formation substrate described in the above embodiment mode, the light emitting layer can be easily formed, and thus the light emitting device can be easily manufactured. In addition, since a fine pattern can be formed, a high-definition light-emitting device can be obtained. In addition, by applying the film formation substrate described in the above embodiment mode, not only a laser beam but also a lamp heater with a large amount of heat although it is inexpensive can be used as a light source. Thus, the manufacturing cost of the light-emitting device can be reduced.

FIG. 15 illustrates an example in which the driver circuit is not provided over the substrate, but there is no particular limitation, and an IC chip having the driver circuit may be mounted on the substrate.

When an IC chip is mounted, a data line side IC and a scanning line side IC in which a driving circuit for transmitting each signal to the pixel portion is formed in a peripheral (outside) region of the pixel portion by a COG method. You may mount using TCP and a wire bonding system as mounting techniques other than a COG system. TCP is an IC mounted on a TAB tape, and the IC is mounted by connecting the TAB tape to a wiring on an element formation substrate. The data line side IC and the scanning line side IC may be those using a silicon substrate, or may be a glass substrate, a quartz substrate, or a plastic substrate formed with a drive circuit using TFTs. Further, although an example in which one IC is provided on one side has been described, it may be divided into a plurality of parts on one side.

Next, an example of an active matrix light-emitting device manufactured using the deposition substrate exemplified in the above embodiment will be described with reference to FIGS. 16A is a top view illustrating the light-emitting device, and FIG. 16B is a cross-sectional view taken along the chain line A-A ′ in FIG. 16A. An active matrix light-emitting device according to this embodiment includes a pixel portion 1702 provided over an element substrate 1710, a driver circuit portion (source side driver circuit) 1701, a driver circuit portion (gate side driver circuit) 1703, Have. The pixel portion 1702, the driver circuit portion 1701, and the driver circuit portion 1703 are sealed between the element substrate 1710 and the sealing substrate 1704 with a sealant 1705.

Further, over the element substrate 1710, an external input terminal that transmits a signal (eg, a video signal, a clock signal, a start signal, or a reset signal) and a potential from the outside to the driver circuit portion 1701 and the driver circuit portion 1703 is provided. A lead wiring 1708 for connection is provided. Here, an example in which an FPC (flexible printed circuit) 1709 is provided as an external input terminal is shown. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

Next, a cross-sectional structure is described with reference to FIG. A driver circuit portion and a pixel portion are formed over the element substrate 1710. Here, a driver circuit portion 1701 which is a source side driver circuit and a pixel portion 1702 are shown.

The driver circuit portion 1701 shows an example in which a CMOS circuit in which an n-channel TFT 1723 and a p-channel TFT 1724 are combined is formed. Note that the circuit forming the driver circuit portion may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits. In this embodiment mode, a driver integrated type in which a driver circuit is formed over a substrate is shown; however, this is not necessarily required, and the driver circuit can be formed outside the substrate.

The pixel portion 1702 includes a switching TFT 1711, a plurality of pixels including a current control TFT 1712 and a first electrode layer 1713 electrically connected to a wiring (source electrode or drain electrode) of the current control TFT 1712. It is formed. Note that an insulator 1714 is formed so as to cover an end portion of the first electrode layer 1713. Here, a positive photosensitive acrylic resin is used.

In order to improve the coverage of the film formed as a stack on the upper layer, it is preferable that a curved surface having a curvature be formed on the upper end portion or the lower end portion of the insulator 1714. For example, in the case where a positive photosensitive acrylic resin is used as the material of the insulator 1714, it is preferable that the upper end portion of the insulator 1714 has a curved surface having a curvature radius (0.2 μm to 3 μm). As the insulator 1714, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used. For example, both silicon oxide and silicon oxynitride can be used.

Over the first electrode layer 1713, an EL layer 1700 including a light-emitting layer and a second electrode layer 1716 are stacked. The first electrode layer 1713 corresponds to the first electrode layer 302 described above, and the second electrode layer 1716 corresponds to the second electrode layer 306. Note that the first electrode layer 1713 is an ITO film, and the wiring of the current control TFT 1712 connected to the first electrode layer 1713 is a laminated film of a titanium nitride film and a film containing aluminum as a main component, or a titanium nitride film, When a laminated film of a film containing aluminum as a main component and a titanium nitride film is applied, the resistance as a wiring is low and good ohmic contact with the ITO film can be obtained. Note that although not shown here, the second electrode layer 1716 is electrically connected to an FPC 1709 which is an external input terminal.

The EL layer 1700 includes at least a light-emitting layer, and includes a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer as appropriate in addition to the light-emitting layer. A light-emitting element 1715 is formed with a stacked structure of the first electrode layer 1713, the EL layer 1700, and the second electrode layer 1716.

In the cross-sectional view in FIG. 16B, only one light-emitting element 1715 is illustrated; however, in the pixel portion 1702, a plurality of light-emitting elements are arranged in a matrix. In the pixel portion 1702, light emitting elements that can emit three types of light (R, G, and B) can be selectively formed to form a light emitting device capable of full color display. Alternatively, a light emitting device capable of full color display may be obtained by combining with a color filter.

Further, the sealing substrate 1704 and the element substrate 1710 are attached to each other with the sealing material 1705, whereby the light-emitting element 1715 is provided in the space 1707 surrounded by the element substrate 1710, the sealing substrate 1704, and the sealing material 1705. Yes. Note that the space 1707 includes not only an inert gas (such as nitrogen or argon) but also a structure filled with a sealant 1705.

Note that an epoxy-based resin is preferably used for the sealant 1705. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like can be used as a material used for the sealing substrate 1704.

As described above, by using the method for manufacturing a light-emitting device that is one embodiment of the present invention, loss of materials in forming a light-emitting element can be significantly reduced. Thus, cost reduction can be achieved.

In addition, by using the deposition substrate described in the above embodiment mode, an EL layer included in the light-emitting element can be easily formed, and a light-emitting device including the light-emitting element can be easily manufactured. In addition, by applying the film formation substrate described in the above embodiment mode, the light emitting layer can be easily formed, and thus the light emitting device can be easily manufactured. In addition, since a fine pattern can be formed, a high-definition light-emitting device can be obtained. As the light source, not only a laser beam but also a lamp heater with a large amount of heat although it is inexpensive can be used. Thus, the manufacturing cost of the light-emitting device can be reduced.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

(Embodiment 6)
In this embodiment, various electronic devices completed using the light-emitting device described in the above embodiment will be described with reference to FIGS.

Electronic devices to which light-emitting devices are applied include televisions, video cameras, digital cameras, goggle-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, audio components, etc.), notebook computers, game machines, mobile phones An information terminal (mobile computer, mobile phone, smartphone, portable game machine, electronic book, etc.), an image playback device equipped with a recording medium (specifically, a recording medium such as a digital video disc (DVD)) is played back, and the image And a lighting fixture). Specific examples of these electronic devices are shown in FIGS.

FIG. 17A illustrates a display device, which includes a housing 8001, a support base 8002, a display portion 8003, a speaker portion 8004, a video input terminal 8005, and the like. The display portion 8003 includes a light-emitting device formed using the deposition substrate described in the above embodiment. The display device includes all information display devices such as a personal computer, a TV broadcast reception, and an advertisement display.

FIG. 17B illustrates a computer, which includes a main body 8101, a housing 8102, a display portion 8103, a keyboard 8104, an external connection port 8105, a mouse 8106, and the like. The display portion 8103 includes a light-emitting device including a light-emitting element formed using the film formation apparatus which is one embodiment of the present invention.

FIG. 17C illustrates a video camera, which includes a main body 8201, a display portion 8202, a housing 8203, an external connection port 8204, a remote control reception portion 8205, an image receiving portion 8206, a battery 8207, an audio input portion 8208, operation keys 8209, and an eyepiece. Part 8210 and the like. The display portion 8202 includes a light-emitting device including a light-emitting element formed using the film formation apparatus described in the above embodiment.

FIG. 17D illustrates a desk lamp, which includes a lighting unit 8301, an umbrella 8302, a variable arm 8303, a column 8304, a base 8305, and a power switch 8306. The lighting portion 8301 includes a light-emitting device formed using the film formation apparatus described in the above embodiment. The lighting fixture includes a ceiling-fixed lighting fixture or a wall-mounted lighting fixture.

Here, FIG. 17E illustrates a mobile phone, which includes a main body 8401, a housing 8402, a display portion 8403, an audio input portion 8404, an audio output portion 8405, operation keys 8406, an external connection port 8407, an antenna 8408, and the like. The display portion 8403 includes a light-emitting device having a light-emitting element formed using the film formation apparatus described in the above embodiment.

18A and 18B show another example of the structure of the mobile phone 8500. FIG. 18A is a front view, FIG. 18B is a rear view, and FIG. 18C is a development view. The cellular phone 8500 is a so-called smartphone that has both functions of a telephone and a portable information terminal, has a built-in computer, and can perform various data processing in addition to voice calls.

A mobile phone 8500 includes two housings 8501 and 8502. The housing 8501 includes a display portion 8511, a speaker 8512, a microphone 8513, operation keys 8514, a pointing device 8515, a camera lens 8516, an external connection terminal 8517, an earphone terminal 8518, and the like. The housing 8502 includes a keyboard 8521, An external memory slot 8522, a camera lens 8523, a light 8524, and the like are provided. An antenna is incorporated in the housing 8501. A mobile phone 8500 uses a light-emitting device having a light-emitting element formed using the film formation apparatus described in the above embodiment for the display portion 8511.

In addition to the above structure, a non-contact IC chip, a small recording device, or the like may be incorporated.

The display direction of the display portion 8511 changes as appropriate in accordance with the usage pattern. Since the camera lens 8516 is provided on the same surface as the display portion 8511, a videophone can be used. Further, a still image and a moving image can be taken with the camera lens 8523 and the light 8524 using the display portion 8511 as a viewfinder. The speaker 8512 and the microphone 8513 can be used for videophone calls, recording and playing sound, and the like as well as voice calls. With the operation keys 8514, incoming / outgoing calls, simple information input such as e-mail, screen scrolling, cursor movement, and the like can be performed. Further, the housing 8501 and the housing 8502 (FIG. 18A) which overlap with each other are slid and developed as illustrated in FIG. 18C, so that the portable information terminal can be used. In this case, smooth operation can be performed using the keyboard 8521 and the pointing device 8515. The external connection terminal 8517 can be connected to an AC adapter and various types of cables such as a USB cable, and charging and data communication with a personal computer or the like are possible. Further, a recording medium can be inserted into the external memory slot 8522 so that a larger amount of data can be stored and moved.

In addition to the above functions, an infrared communication function, a television reception function, or the like may be provided.

An electronic device including a display device manufactured by applying the deposition substrate and the deposition method described in the above embodiment has high pattern formation accuracy particularly when a light emitting layer is formed over a large substrate. Electronic devices with high display quality can be provided. In addition, throughput is improved, productivity in manufacturing display devices and lighting devices is improved, and mounted electronic devices and lighting devices can be provided at low cost. In addition, since material loss in manufacturing the display device and the lighting device can be reduced, manufacturing cost can be reduced and an inexpensive display device can be provided.

As described above, an electronic device or a lighting fixture can be obtained by using the light-emitting device described in any of the above embodiments. The applicable range of the light-emitting device is extremely wide, and can be applied to electronic devices in various fields.

Note that this embodiment can be combined with any of the other embodiments described in this specification as appropriate.

100 substrate 111 light reflection layer 112 heat insulation layer 113 light absorption layer 114 release layer 150 film formation substrate 150B film formation substrate 150G film formation substrate 150R film formation substrate 151 region 151a region 152 region 152a region 153 region 153a region 154 margin 160 Material layer 160B EL layer (B)
160G EL layer (G)
160R EL layer (R)
161 Material layer 161a Material layer 162 Material layer 162a Material layer 163 Material layer 200 Metal mask 210 Deposition substrate 211 Deposition region 211a Deposition region 220 Deposition substrate 221 Deposition region 221a Deposition region 230 Deposition Deposition substrate 231 Deposition region 231a Deposition region 300 Substrate 302 Electrode layer 304 Light emitting layer 306 Electrode layer 308 EL layer 322 Hole injection layer 324 Hole transport layer 326 Electron transport layer 328 Electron injection layer 801 Deposition chamber 802 Gate valve 803 Gate valve 804 Deposition substrate support means 805 Deposition substrate support means 806 Deposition substrate heating means 807 Deposition substrate 808 Material layer 809 Deposition substrate 809a Deposition substrate 809b Deposition substrate 809c Film formation substrate 810 Light source 811 Tube 1103 Laser oscillation device 1104 Optical system 1105 Optical system 106 Optical system 1107 Reflective mirror 1108 Position alignment mechanism 1109 Mechanism 1117 Control device 1501 Substrate 1504 Insulating layer 1513 Electrode layer 1514 Partition 1515B EL layer 1515G EL layer 1515R EL layer 1516 Electrode layer 1521 Light emitting region 1522 Partition 1601 Pixel unit 1602 Data line 1603 Scanning Line 1604 Partition 1605 Region 1606 Input terminal 1607 Input terminal 1608 Connection wiring 1609a FPC
1609b FPC
1700 EL layer 1701 Drive circuit portion 1702 Pixel portion 1703 Drive circuit portion 1704 Sealing substrate 1705 Sealing material 1707 Space 1708 Wiring 1709 FPC
1710 Element substrate 1711 Switching TFT
1712 Current control TFT
1713 Electrode layer 1714 Insulator 1715 Light emitting element 1716 Electrode layer 1723 n-channel TFT
1724 p-channel TFT
8001 Housing 8002 Support base 8003 Display unit 8004 Speaker unit 8005 Video input terminal 8101 Main body 8102 Housing 8103 Display unit 8104 Keyboard 8105 External connection port 8106 Mouse 8201 Main body 8202 Display unit 8203 Housing 8204 External connection port 8205 Remote control receiving unit 8206 Image reception Unit 8207 battery 8208 audio input unit 8209 operation key 8210 eyepiece unit 8301 illumination unit 8302 umbrella 8303 variable arm 8304 column 8305 stand 8306 power switch 8401 body 8402 housing 8403 display unit 8404 audio input unit 8405 audio output unit 8406 operation key 8407 external Connection port 8408 Antenna 8500 Mobile phone 8501 Housing 8502 Housing 8511 Display portion 8512 Speaker 8513 Microphone 514 operation keys 8515 a pointing device 8516 a camera lens 8517 external connection terminal 8518 earphone terminal 8521 keyboard 8522 external memory slot 8523 a camera lens 8524 Light

Claims (6)

On the first side of the substrate,
Having at least a first region, a second region, and a third region that are independent from each other;
The first region is more convex than the other regions;
The second region has a light absorption layer that absorbs light irradiated from the second surface;
The third region is a deposition substrate that overlaps with the light reflecting layer. The film-forming substrate according to claim 1, wherein the first region overlaps with the light reflecting layer. The film-forming substrate according to claim 1, further comprising a first region obtained by laminating a light absorption layer on the light reflection layer. The film-forming substrate according to claim 1, further comprising: a second region formed by laminating a light absorption layer on a heat insulating layer that has lower thermal conductivity than the substrate and transmits irradiated light. The first surface of the substrate has at least a first region, a second region, and a third region that are independent from each other,
The first region is more convex than the other regions;
The second region has a light absorption layer that absorbs light irradiated from the second surface;
The third region is formed with a film forming material that can be formed on the first surface of the film forming substrate overlapping the light reflecting layer, and
The first surface of the film-forming substrate on which the film-forming material is formed and the film-forming surface of the first film-forming substrate are pressed against each other, and the film-forming substrate and the first film Peeling off the deposition target substrate, depositing the deposition material deposited in the first region on the first deposition target substrate,
In a state where the first surface of the film formation substrate and the film formation surface of the second film formation substrate are arranged to face each other and close to each other, light is emitted from the second surface side of the film formation substrate. And depositing the film-forming material deposited on the second region on the second deposition target substrate,
With the first surface of the film formation substrate and the film formation surface of the third film formation substrate facing each other and in close proximity to each other, the film formation substrate is heated, and the third region The film-forming method which forms into a film the said film-forming material formed into a film in said 3rd film-forming substrate. The first surface of the substrate has at least a first region, a second region, and a third region that are independent from each other,
The first region is more convex than the other regions;
The second region has a light absorption layer that absorbs light irradiated from the second surface;
The third region is formed with a film forming material that can be formed on the first surface of the film forming substrate overlapping the light reflecting layer, and
The film-forming substrate in a state where the first surface of the film-forming substrate on which the film-forming material is formed and the film-forming surface of the second film-forming substrate are arranged close to each other. Irradiating light from the second surface side of the film, forming the film-forming material formed in the second region on the second film-forming substrate,
The first surface of the film formation substrate and the film formation surface of the first film formation substrate are pressed against each other, and the film formation substrate and the first film formation substrate are peeled off, Depositing the deposition material deposited on the first region on the first deposition target substrate;
With the first surface of the film formation substrate and the film formation surface of the third film formation substrate facing each other and in close proximity to each other, the film formation substrate is heated, and the third region The film-forming method which forms into a film the said film-forming material formed into a film in said 3rd film-forming substrate.

Images