JP2010250338A - Microwave apparatus and photoelectron integration device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a microwave apparatus capable of controlling light easily, achieving excellent response characteristics, and being miniaturized; and to provide a photoelectron integration device including this microwave apparatus. <P>SOLUTION: In this microwave apparatus, its cross section has a circular shape extended in the direction of its central axis, a desired microwave circuit is formed on its side face, and opposing poles are formed in a region in a portion of its central shaft or side face. The microwave apparatus, a single or a plurality of shape memory alloys having its cross section having a circular shape extended in the direction of its central axis and being extended and contracted depending on change of temperature, and a single or a plurality of optical waveguide members being made of a light transmissive material, having its cross section having a circular shape extended in the direction of its central axis, and being constituted to make their refractive indexes different from each other in the radial direction of the cross section to transmit light beam along the central axis are arranged and integrated on a substrate provided with a buoy groove or a pin to control light beam by a combination of the microwave apparatus, the shape memory alloys, and the optical waveguide members. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an optoelectronic integrated device formed using a stick-shaped shape memory alloy, an optical waveguide member, and a semiconductor device.

  In recent years, progress in the fields of optical computers and optical interconnections has been remarkable. For this reason, there is a need for an optoelectronic integrated device that is compact and capable of controlling light.

  One of the optoelectronic integrated devices currently used is an optical switch. For example, when changing the optical path of an optical fiber that guides light, there is an optical switch that switches the optical path by mechanically moving a mirror or the like, and reflects the light wave by the movable mirror or the like. Thus, switching of the optical path is controlled.

  However, the optical switch as described above has a problem that the response characteristic of the optical path switching is poor because the mirror must be moved to switch the optical path. Further, when the optical switch has the mechanical structure as described above, it is difficult to reduce the size and to integrate the optical switch.

  In forming an optoelectronic integrated device, it is necessary to use a semiconductor device in which various circuit patterns are formed together with an optical fiber. However, a cylindrical optical fiber can be fixed by a buoy groove or a pin on a substrate. Since the planar semiconductor device cannot be fixed with buoy grooves or pins, it is difficult to fix the optical fiber and the semiconductor on the same substrate.

  The present invention has been made in view of the above-described problems. An optoelectronic integrated device that can easily control light, has good response characteristics, can be miniaturized, and includes a semiconductor device on the same substrate. Is to provide.

  The microwave device according to claim 1 of the present invention has a circular cross section and a shape extending in the direction of the central axis thereof, and a desired microwave circuit is formed on a side surface thereof, or the central axis or A counter electrode is formed in a partial region of the side surface.

  A microwave device according to a second aspect of the present invention is the microwave device according to the first aspect, wherein a light emitting portion or a light receiving portion is formed on an end surface thereof. Is.

  A microwave device according to a third aspect of the present invention is the microwave device according to the first aspect, wherein when the microwave device main body is laminated on a substrate having a buoy groove or a pin, Electrodes are formed at locations where the microwave device main bodies are in contact with each other, and signals are input and output between the microwave device main bodies.

  According to a fourth aspect of the present invention, there is provided an optoelectronic integrated device according to the first or second aspect of the present invention, the microwave device according to the first or second aspect, and a shape having a circular cross section and extending in a direction of the central axis. A single or multiple shape memory alloy that expands and contracts, and a material that can transmit light. Its cross section is circular and has a shape extending in the direction of its central axis. A light beam can propagate along the central axis. The microwave device and the shape memory alloy on a substrate having a buoy groove or a pin having a single or a plurality of optical waveguide members having different refractive indexes in the radial direction of the cross section. The light beam is controlled by a combination of the microwave device, the shape memory alloy, and the optical waveguide member in which the optical waveguide member is disposed and integrated.

  An optoelectronic integrated device according to claim 5 of the present invention is the optoelectronic integrated device according to claim 4, wherein the optoelectronic integrated device has a circular cross section and a shape extending in the central axis direction, and a desired integrated circuit on the side surface. And a semiconductor device in which an electrode is formed on an end surface thereof, and the microwave device, the shape memory alloy, the optical waveguide member, and the semiconductor device are formed on a substrate provided with a buoy groove or a pin. The light beam is controlled by a combination of the microwave device, the shape memory alloy, the optical waveguide member, and the semiconductor device that are arranged and integrated.

  An optoelectronic integrated device according to claim 6 of the present invention is the optoelectronic integrated device according to claim 5, wherein the semiconductor device has a light emitting portion or a light receiving portion formed on an end face thereof. It is characterized by.

  According to the present invention, an optoelectronic integrated device is formed by combining a shape memory alloy that expands and contracts with a change in temperature and an optical waveguide member capable of propagating light. The expansion and contraction of the alloy can be controlled, and the light wave can be easily controlled in various ways, and can be easily integrated.

  Further, according to the present invention, a shape memory alloy is bonded to the optical waveguide member, and the shape memory alloy is expanded and contracted to move the optical waveguide member, and the position from which the light wave propagating in the optical waveguide member is emitted. Since the change is made, the response characteristics are good, so that there is an effect that an optical switch that can be integrated, has high accuracy, and good response characteristics can be easily produced.

  Further, according to the present invention, it has a plurality of shape memory alloys in which a mirror is formed by a metal thin film on an inclined end surface whose end surface is inclined by about 45 degrees with respect to the central axis, and by extending and contracting the shape memory alloy, A shape memory alloy that reflects the light wave emitted from the first optical waveguide member is selected, the light wave is reflected by the inclined end surface of the selected shape memory alloy, and one of the plurality of second optical waveguide members is reflected. Since it is incident, there is an effect that an optical switch that can be integrated, has high accuracy, and has good response characteristics can be easily produced.

  Further, according to the present invention, each inclined surface has an angle of about 45 degrees with respect to the central axis, and two inclined surfaces are formed at positions 180 degrees symmetrical with respect to the central axis. Has two first and second shape memory alloys in which a mirror is formed of a metal thin film, and the first and second optical waveguide members are arranged in a direction perpendicular to the central axis of each optical waveguide member. The respective end faces of the third and fourth optical waveguide members are configured to face the respective end faces of the first and second optical waveguide members, and the first optical waveguide is formed. The central axis of the member is the same as the central axis of the third optical waveguide member, the central axis of the second optical waveguide member is the same as the central axis of the fourth optical waveguide member, and the first and first optical waveguide members are the same. The shape memory alloy 2 has the same central axis and is perpendicular to the central axis of the optical waveguide member. When the first and second shape memory alloys are extended, the inclined surfaces of the first shape memory alloy reflect the light beams from the first optical waveguide member and the third optical waveguide member. The inclined surfaces of the second shape memory alloy can reflect the light beams from the second and fourth optical waveguide members, and the first and second By extending and contracting the shape memory alloy, it was decided to switch the path of the light wave and reconnect the optical waveguides, so that it is easy to create an optical crossbar that is integrated, highly accurate, and has good response characteristics Has an effect.

  Further, according to the present invention, the cross section is rectangular and each end face has an angle of about 45 degrees with respect to the center line of the longitudinal section, and 2 at a position 180 degrees symmetrical with respect to the center line. Two inclined surfaces are formed, and each inclined surface has two first and second shape memory alloys formed with a mirror by a metal thin film, and includes a plurality of first optical waveguide members and a plurality of second The optical waveguide members are arranged in a direction perpendicular to the central axis of each optical waveguide member, and the end surfaces of the plurality of third optical waveguide members and the plurality of fourth optical waveguide members are the first plurality of optical waveguide members. And the respective end faces of the plurality of second optical waveguide members are opposed to each other, and the central axis of the plurality of first optical waveguide members is the central axis of the plurality of third optical waveguide members The central axes of the plurality of second optical waveguide members are the same as those of the plurality of fourth optical waveguide members. The center line of the longitudinal section of the first and second shape memory alloys is the same as the center axis of the optical waveguide member, and is perpendicular to the center axis of the optical waveguide member, and the first and second When the shape memory alloy is extended, the inclined surfaces of the first shape memory alloy reflect the light beams from the plurality of first optical waveguide members and the plurality of third optical waveguide members. And configured such that the inclined surfaces of the second shape memory alloy can reflect the light beams from the plurality of second and fourth optical waveguide members, and the first and second By expanding and contracting the shape memory alloy, the path of the light wave is switched and the optical waveguides are connected to each other, so that the light is integrated, highly accurate, and has good response characteristics. Add-drop that can switch the conduction of light propagating in the fiber at once It has the effect that the switch can be easily created.

  According to the invention, in the optical crossbar, the first and second shape memory alloys are formed by forming a metal thin film on two inclined surfaces sandwiching a right angle of a right isosceles triangular prism, and the two inclined surfaces. And a mirror formed by reflecting the light beam incident on the inclined surface at each central portion of the mirror, and has a circular cross section and a shape that expands and contracts in the direction of the central axis according to a change in temperature, and has one end of the mirror Two shape memory alloys bonded to the bottom surface of the first optical waveguide member and the plurality of first optical waveguide members and the plurality of shape memory alloys when the first and second shape memory alloys are extended. The first shape memory alloy mirror can reflect the light beam from the third optical waveguide member, and the light beam from the plurality of second and fourth optical waveguide members can be reflected by the mirror. The second shape memory alloy mirror can reflect In addition to the effect of the fifth aspect, the plurality of the shape memory alloys are arranged in parallel so as to reduce variation in the amount of movement of the shape memory alloy and to easily control the direction in which the mirror moves up and down. This has the effect that an add / drop switch capable of switching the conduction of light propagating in an optical fiber at a time can be easily created.

  According to the present invention, in the optical crossbar, the first shape memory alloy is disposed along the outer periphery of the second shape memory alloy, and the two shape memories of the first shape memory alloy are arranged. When the alloy contracts and the two shape memory alloys of the second shape memory alloy are extended, the light beams from the plurality of first optical waveguide members and the plurality of third optical waveguide members are The first shape memory alloy mirror is capable of reflecting, and the second shape memory alloy mirror reflects light beams from the second and fourth optical waveguide members. Integration is possible because the optical wave path is switched and the optical waveguides are switched by shrinking either the first or second shape memory alloy. High accuracy, good response characteristics, multiple parallel Add-drop switch that allows switching of conduction is propagating ordered the optical fiber light at a time has the effect of easily be created. In addition, since the path of the light wave can be switched by contracting either one of the first or second shape memory alloy, the switching control of the path of light can be performed with higher accuracy.

  Further, according to the present invention, the shape memory has two shape memory alloys in which the light wavelength filters having different characteristics are formed on the inclined end surfaces whose end surfaces are inclined by about 45 degrees with respect to the central axis. The optical wavelength filter that reflects the light wave emitted from the first optical waveguide member is selected by expanding and contracting each of the alloys, and the light wave having a desired wavelength is incident on the second optical waveguide member. Therefore, it is possible to easily produce an optical filter that can extract two types of light waves more easily than the original light waves with high accuracy and good response characteristics.

  Further, by increasing the number of stages, there is an effect that an optical filter with higher accuracy can be obtained.

  Further, according to the present invention, the optical wavelength filter has a shape memory alloy having an optical wavelength filter formed on an inclined end surface in which the end surface is inclined with respect to the central axis, and the optical wavelength filter reflects differently depending on the reflection position of the optical wave. It is formed so as to have a characteristic, and by expanding and contracting the shape memory alloy, the reflection position of the optical wavelength filter that reflects the light wave emitted from the first optical waveguide member is changed, and the light wave of a desired wavelength is changed. Since it is made incident on the second optical waveguide member, it is possible to easily create an optical filter that is integrated, has high accuracy, has good response characteristics, and can easily extract a plurality of types of light waves from the original light wave. Have

  Further, by increasing the number of stages, there is an effect that an optical filter with higher accuracy can be obtained.

  According to the present invention, in the optical filter, the optical wavelength filter formed on the inclined end surface of the shape memory alloy includes a metal thin film formed on the inclined end surface, and a dielectric is further formed on the metal thin film. Since it is a Fabry-Perot type wavelength filter to be created, an optical wavelength filter corresponding to a wide range of wavelengths can be formed, and the desired light wave can be extracted more reliably than the original light wave.

  According to the invention, in the optical filter, the wavelength filter formed on the inclined end surface of the shape memory alloy is formed by providing a groove on the inclined end surface and forming the metal thin film thereon. Therefore, the reflection angle can be set to a desired value depending on the wavelength of the incident light wave, and an optical wavelength filter having different reflection characteristics depending on the position can be formed, which is more reliable than the original light wave. The desired light wave can be extracted.

  In addition, according to the present invention, the light beam incident from the outside is demultiplexed, and the demultiplexed light beams are combined after passing through the branched optical paths having different optical path lengths, thereby generating interference. The reflection surface is provided at the end of the optical waveguide that constitutes one of the two branched optical paths, and the end face of the optical waveguide member that constitutes a part of the other branched optical path, and the metal thin film is formed on the end face. Since the metal thin film of the shape memory alloy is disposed at a predetermined distance, the other branch optical path is emitted from the end face of the optical waveguide member to the metal thin film, and the reflected light beam is incident again. Since the light beam that has passed through the other branched light path has a phase different from that of the light beam that has passed through the other branched light path, it can be used as a Michelson interferometer. Can be integrated Can turn easily, it has the effect that it is easy to create.

  Further, according to the present invention, since the optical switch is configured to change the optical path length by expanding and contracting the shape memory alloy in the interferometer, and to output a control signal resulting from a phase shift, it is easy. In addition, an optical switch can be produced.

  Further, according to the present invention, in the optical switch, the optical crossbar, the optical filter, and the interferometer, a temperature change is caused by causing electricity to flow through the shape memory alloy, or the shape memory alloy is expanded or contracted. The temperature change is caused to expand and contract by blowing warm air, or the temperature change is caused to expand and contract by applying light to the shape memory alloy. It has the effect of being able to do with accuracy.

  According to the present invention, the optical switch, the optical crossbar, the optical filter, and the interferometer components are fixedly disposed on a substrate provided with a buoy groove or a pin, and the optical switch, the optical cross Since the bar, the optical filter, and the interferometer are integrated and formed on the substrate, the optical waveguide member and the shape memory alloy can be installed on the same substrate to create an optoelectronic integrated device, It has the effect that integration is easy.

  Further, according to the present invention, the cross section is circular and has a shape extending in the central axis direction, a desired integrated circuit is formed on the side surface, and an electrode is formed on the end surface. Therefore, it has an effect that it can be arranged and fixed on the substrate having buoy grooves and pins by using the buoy grooves and pins.

  In addition, by using it as a part of the transmission line, the signal can be controlled during signal transmission.

  According to the present invention, since the light emitting portion or the light receiving portion is formed on the end face of the semiconductor device, an optoelectronic integrated device can be produced by combining with the optical waveguide member. It has the effect.

  According to the present invention, in the semiconductor device, when the semiconductor devices are stacked on a substrate having buoy grooves or pins, electrodes are formed at locations where the semiconductor devices are in contact with each other, and the semiconductor device Since signals are input / output between devices, each semiconductor device does not need to be connected by a transmission line such as an electric wire.

  Further, according to the present invention, the semiconductor device, a single or a plurality of shape memory alloys having a circular cross section and extending in the central axis direction, and extending and contracting due to a change in temperature, can transmit light. The cross section of the cross section is circular and has a shape extending in the direction of the central axis, and the refractive index is varied in the radial direction of the cross section so that the light beam can propagate along the central axis. The semiconductor device, the shape memory alloy, and the optical waveguide member arranged on a substrate having a single or a plurality of optical waveguide members and provided with buoy grooves or pins, and the semiconductor device and the integrated Since the light beam is controlled by the combination of the shape memory alloy and the optical waveguide member, the semiconductor device, the shape memory alloy, and the optical waveguide member are the same shape and size in a stick shape on the same substrate. It can be easily fixed. , Are also possible stacked, it has the effect of being able to create an optoelectronic integrated apparatus capable of easily complicated control.

  Further, according to the present invention, the cross section is circular and has a shape extending in the central axis direction, and a desired microwave circuit is formed on the side surface of the central axis or a part of the side surface. Since the counter electrode is formed in the region, it has the effect of being able to be fixed on the substrate having buoy grooves and pins by using the buoy grooves and pins.

  In addition, by using it as a part of the transmission line, the signal can be controlled during signal transmission.

  According to the present invention, since the light emitting portion or the light receiving portion is formed on the end face of the microwave device, an optoelectronic integrated device can be formed by combining with the optical waveguide member. It has the effect of being able to.

  Further, according to the present invention, in the microwave device, when the microwave device main bodies are stacked on a substrate having buoy grooves or pins, electrodes are provided at locations where the microwave device main bodies are in contact with each other. Since the signal is input and output between the microwave device bodies, the microwave devices need not be connected by a transmission line such as a coaxial cable.

  Further, according to the present invention, the microwave device, a single or a plurality of shape memory alloys having a circular cross section and extending in the direction of the central axis thereof and expanding and contracting due to a change in temperature, and transmitting light The cross section is circular and has a shape extending in the direction of the central axis, and the refractive index is varied in the radial direction of the cross section so that the light beam can propagate along the central axis. And the microwave device, the shape memory alloy, and the optical waveguide member are arranged and integrated on a substrate having a buoy groove or a pin. Since the light beam is controlled by the combination of the device, the shape memory alloy, and the optical waveguide member, the microwave device, the shape memory alloy, and the optical waveguide member that are stick-shaped and have the same shape and size are provided. Easy on the same board Fixing can be arranged, also a possible stacked, has the effect of being able to create an optoelectronic integrated apparatus capable of easily complicated control.

  According to the invention, in the optoelectronic integrated device, the microwave device, the shape memory alloy, the optical waveguide member, and the semiconductor are further provided on the substrate further including the semiconductor device and provided with buoy grooves or pins. Since the light beam is controlled by a combination of the microwave device, the shape memory alloy, the optical waveguide member, and the semiconductor device, in which the device is arranged and integrated, it has a stick shape and the same shape and size. An optoelectronic integrated device in which a microwave device, a shape memory alloy, an optical waveguide member, and a semiconductor device can be easily fixed and arranged on the same substrate, and can be arranged in a stacked manner. It has the effect that can be created.

It is a figure which shows the structure of the optical connection structure which optically couple | bonded between optical fibers using the reflection in a mutually inclined end surface, and the lens effect | action of a mutual side surface, Comprising: It is a perspective view (FIG. 1 (a)), FIG. FIG. 1D is a diagram (D) shown in FIG. 1B (FIG. 1B), and a diagram E is shown in FIG. 1A (FIG. 1C). It is a figure which shows the structure of the optical connection structure which can multiplex / demultiplex a light beam, Comprising: A front view (FIG.2 (a)), and the elements on larger scale of FIG.2 (a) (FIG.2 (b)) It is. It is a figure which shows the structure of the optical connection structure in which a light beam can be combined and demultiplexed, and can be drawn in T shape with an optical wiring, Comprising: It is a perspective view (FIG. 3 (a)), F arrow of FIG. 3 (a) FIG. 3B is an illustration (FIG. 3B), and an arrow G in FIG. 3A (FIG. 3C). It is a figure which shows the structure of the optical switch concerning Embodiment 1 of this invention. It is a figure which shows the structure of the optical switch concerning Embodiment 2 of this invention. It is a figure which shows the structure of the optical crossbar concerning Embodiment 3 of this invention. It is a figure which shows the structure of the optical filter concerning Embodiment 4 of this invention. It is a figure which shows the structure of the optical filter concerning Embodiment 5 of this invention. It is a figure which shows the structure of the Michelson interferometer concerning Embodiment 6 of this invention, Comprising: A perspective view (FIG.9 (a)), K arrow figure (FIG.9 (b)) of FIG.9 (a), And FIG. 9A is an L arrow diagram (FIG. 9C). It is a figure which shows the structure of the semiconductor device concerning Embodiment 7 of this invention. It is a figure which shows the state which has connected semiconductor devices using the semiconductor device concerning Embodiment 7 of this invention. It is a figure which shows the structure of the circuit which combined the semiconductor device concerning Embodiment 8 of this invention, and an optical fiber. It is the figure which showed the state which laminated | stacked the semiconductor device concerning Embodiment 8 of this invention on the buoy groove of the board | substrate. It is a perspective view of the add drop switch concerning the modification 1 of Embodiment 3 of this invention. It is a figure which shows the structure of the add / drop switch concerning the modification 1 of Embodiment 3 of this invention. It is a perspective view which shows another structure of the add / drop switch concerning the modification 1 of Embodiment 3 of this invention. It is a perspective view which shows the structure of the add drop switch concerning the modification 2 of Embodiment 3 of this invention. It is a figure which shows the structure of the microwave apparatus concerning the modification of Embodiment 7 of this invention.

  Before describing each embodiment, a basic optical connection structure between optical fibers will be described with reference to FIGS.

  FIG. 1 is a diagram showing a configuration of an optical connection structure in which optical fibers are optically coupled by using reflection on the inclined end surfaces and lens action on the side surfaces, FIG. 1 (a) is a perspective view, and FIG. FIG. 1B is a diagram shown by an arrow D in FIG. 1A, and FIG. 1C is a diagram shown by an arrow E in FIG. The optical connection structure in FIG. 1 includes a first optical fiber Of1 and a second optical fiber Of2, and both the first and second optical fibers Of1, Of2 have a circular cross section and a central axis. It has a linear shape with a constant diameter in the Ax1 and Ax2 directions, and has inclined end faces F1 and F2 made of mirror surfaces inclined by 45 degrees with respect to the central axes Ax1 and Ax2 at one end, and a central axis with a predetermined diameter at the center. The core 1 is formed so as to extend in the direction, and the clad 2 is formed outside the core 1.

  The center Cp2 of the inclined end face F2 of the second optical fiber Of2 is the center Cp1 of the inclined end face F1 of the first optical fiber Of1 of the second optical fiber Of2 with respect to the first optical fiber Of1. Located on both optical fiber orthogonal axes Ax3 orthogonal to the central axis Ax1 of the first optical fiber Of1 so as to sandwich the central axis Ax4 of the inclined end surface F1, the central axis Ax2 of the second optical fiber Of2 is 90 perpendicular to both optical fiber orthogonal axes Ax3 so as to sandwich the central axis Ax5 of the inclined end face F2 of the second optical fiber Of2 and 90 relative to the central axis Ax1 of the first optical fiber Of1 when viewed from both optical fiber orthogonal axes Ax3. The inclined end face F1 of the first optical fiber Of1 and the inclined end face F2 of the second optical fiber Of2 are viewed from the direction of both optical fiber orthogonal axes Ax3. Oriented at opposite you are, and are arranged such that the specific value mentioned distance d between the second optical fiber Of2 the first optical fiber Of1 next.

  That is, the optical fiber interval d is such that the light beam whose diameter is expanded by being reflected at the center Cp1 of the inclined end face F1 of the first optical fiber is on the side surfaces of both the first optical fiber Of1 and the second optical fiber Of2. The center Cp2 of the inclined end face F2 of the second optical fiber is positioned at a position that is converged by the lens action and has the same diameter as the spot size ωB when propagating in the second optical fiber Of2. It is assumed that it is an interval. The distance d depends on the wavelength of the incident light beam, the spot size ωA in the first optical fiber Of1, the spot size ωB in the second optical fiber Of2, the radius a of the cladding, and the refractive index nc of the cladding. By selecting as appropriate, it can be set to a desired value. The spot sizes ωA and ωB in the first and second optical fibers can be changed relatively easily by using a thermal diffusion technique such as the dopant of the core 1.

  The first and second optical fibers Of1, Of2 are made of a material that can transmit light, that is, a dielectric or a semiconductor, and for example, SiO2 is used.

  The refractive index of the clad 2 is made smaller than the refractive index of the core 1, and the refractive indexes of the core 1 and the clad 2 are first relative to the refractive index of the medium (here, air) around the optical waveguide. , A value sufficiently large to satisfy the total reflection condition at the inclined end faces F1 and F2 of the second optical fibers Of1 and Of2.

  Further, in order to obtain the inclined end faces F1 and F2 of the first and second optical fibers Of1 and Of2, for example, first, a polishing machine having a polished surface with a rough finished surface is used, and the end of the optical fiber is polished to the polished surface. Then, the surface is polished at an angle of 45 degrees, and then similarly polished using a polishing machine having a polished surface with a fine finished surface roughness, and finally polished. Thereby, the inclined end surfaces F1 and F2 which consist of mirror surfaces inclined 45 degrees with respect to the central axis can be obtained.

  Next, the operation of the optical connection structure configured as described above will be described.

  This behavior can be theoretically explained by using an analysis model (1997 IEICE General Conference Proceedings, Electronics 1, P500-501, SC-3-6 “Single Mode Optical Fiber”). Chip L coupling and its application to EO chip and EO board coupling "), the explanation using the analysis model is omitted here.

  In FIG. 1, when a light beam having a predetermined wavelength λ is incident on the other end of the first optical fiber Of1, the incident light beam has a spot size along the central axis Ax1 at the center of the first optical fiber Of1. propagating at ωA, reflected at a central point Cp1 of the inclined end face F1 of the first optical fiber Of1 at an angle of 45 degrees with respect to the central axis Ax4 of the inclined end face F1, and the first optical fiber along the optical fiber orthogonal axis Ax3. The light passes through the side surface of the optical fiber Of1 and the side surface of the second optical fiber Of2, and is reflected at an angle of 45 degrees with respect to the central axis Ax5 of the inclined end surface F2 by the inclined end surface F2 of the second optical fiber Of2. The center of the optical fiber Of2 is propagated along the central axis Ax2 with the spot size ωB and emitted from the other end of the second optical fiber Of2.

  At this time, the light beam reflected at the center Cp1 of the inclined end face F1 of the first optical fiber expands in diameter because there is no light confinement structure in the radial direction of the first optical fiber Of1, and this diameter is increased. The light beam having a spread is subjected to a uniform convergence effect in the cross-sectional direction of the light beam by the lens action of the side surfaces of the first and second optical fibers Of1 and Of2, which are in a positional relationship twisted 90 degrees relative to each other. Here, the optical fiber interval d is determined when the light beam whose diameter is expanded by being reflected at the center Cp1 of the inclined end face F1 of the first optical fiber is propagated in the second optical fiber Of2 due to the convergence effect. Since the spacing is such that the center Cp2 of the inclined end face F2 of the second optical fiber is located at a position having the same diameter as the spot size ωB, the light beam subjected to the convergence effect is the second The optical fiber having the same diameter as the spot size ωB in the second optical fiber Of2 at the center Cp2 of the inclined end face F2 of the optical fiber, and the light beam reflected by the inclined end face F2 of the second optical fiber All are incident on the core 1 of the second optical fiber Of2. Therefore, the coupling efficiency η between the two optical fibers Of1, Of2 is 1.

  Further, when a light beam having a predetermined wavelength λ is incident on the other end of the second optical fiber Of2, the incident light beam follows a path completely opposite to that described above, and has a coupling efficiency of 1 as described above. The second optical fiber Of2 propagates to the first optical fiber Of1, and is emitted from the other end of the first optical fiber Of1.

  In the above description, the intersection angle between the first and second optical fibers Of1, Of2 and the two optical fiber orthogonal axes Ax3, the intersection angle between the first optical fiber Of1 and the second optical fiber Of2, and each light The inclination angles of the inclined end faces F1 and F2 of the fiber and the optical fiber interval d are assumed to be ideal values. Even if these angles and the optical fiber interval d are slightly deviated from the ideal values, the coupling between the optical fibers is performed. Efficiency does not drop sharply. Therefore, each of these angles and the optical fiber interval d can be set to values according to the required coupling efficiency within a range close to the ideal value.

  Further, in this optical connection structure, the light beam incident on the optical fiber is reflected by the two inclined end faces F1 and F2 that are twisted at right angles to each other, so that the light beam is TM-like on one of the inclined end faces. When incident, TE-like incidence occurs on the other inclined end face (or vice versa). Therefore, basically, the connection portion between the first optical fiber Of1 and the second optical fiber Of2 exhibits polarization independence.

  Moreover, although the optical fiber which consists of the core 1 and the clad 2 is used as an optical waveguide member, you may use the rod lens which changes a refractive index so that it may become small gradually in the radial direction.

  As described above, if the optical fibers are optically coupled using the reflection at the inclined end faces and the lens action of the side faces, high-efficiency optical connection is possible, and the basic optical connection described above is also possible. In the structure, the optical wiring can be routed in an L shape. Hereinafter, the optical connection structure as shown in FIG. 1 is referred to as L-shaped coupling.

  2A and 2B are diagrams showing a configuration of an optical connection structure that can multiplex and demultiplex a light beam. FIG. 2A is a front view, and FIG. 2B is a partially enlarged view of FIG. In the figure, the same reference numerals as those in FIG. 1 denote the same or corresponding parts. In the present optical connection structure, the second optical fiber Of2 is arranged with respect to the first optical fiber Of1, and the central axis of the second optical fiber Of2. Are arranged so as to coincide with the central axis of the first optical fiber and the inclined end face F2 of the second optical fiber is parallel to the inclined end face F1 of the first optical fiber and has a predetermined interval S. This is different from the optical connection structure of FIG. Ax6 indicates a first optical fiber orthogonal axis orthogonal to the first optical fiber Of1 so as to sandwich the central axis Ax4 of the inclined end surface F1 at the center point of the inclined end surface F1 of the first optical fiber Of1. ing.

  In the optical connection structure configured as described above, when the light beam is incident from the end of the first optical fiber as indicated by the solid line arrow, the incident light beam is the inclined end surface F1 and the inclined end surface F1. The light is demultiplexed at a rate corresponding to the interval S between the end faces F2, and a part thereof passes through the inclined end face F1 and the inclined end face F2, enters the second optical fiber Of2, is emitted from the end, and the other is on the inclined end face F1. The reflected light travels along the first optical fiber orthogonal axis Ax6 and is emitted from the side surface of the first optical fiber Of1. As a result, the light beam can be demultiplexed.

  On the other hand, when the light beam is incident from the end of the second optical fiber Of2 and the light beam is incident from the side surface of the first optical fiber Of1, as shown by the dashed arrows, the two incident light beams are: The light is combined at the inclined end face F1 of the first optical fiber, enters the first optical fiber, and exits from the end. As a result, the light beams can be combined.

  However, since the diameter of the light beam emitted from the side surface of the first optical fiber Of1 is expanded as described with reference to FIG. 1, it is necessary to use the expanded light beam so as to be grasped well. Further, since the optical coupling efficiency is poor even if the light beam is normally incident from the side surface of the first optical fiber Of1, in order to enter and exit the light beam to the side surface of the first optical fiber Of1, as shown in FIG. It is preferable to use an L-shaped coupling. By using the L-shaped coupling as described above, the light beam entering and exiting the side surface of the first optical fiber Of1 can be routed using the optical wiring.

  FIG. 3 is a diagram showing a configuration of an optical connection structure that uses an L-shaped coupling to multiplex and demultiplex a light beam and can be routed by an optical wiring. FIG. 3A is a perspective view, and FIG. FIG. 3B is an F arrow diagram of FIG. 3A, and FIG. 3C is a G arrow diagram of FIG. 3, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding parts, and the optical connection structure in the drawing is a combination of the optical connection structure in FIG. 2 and the L-shaped coupling in FIG. 1. In addition to the first and second optical fibers Of1, Of2, an inclined end face having the same structure as the first and second optical fibers Of1, Of2 and inclined at 45 degrees with respect to the central axis Ax7 at one end thereof A third optical fiber Of3 having F3, the third optical fiber Of3 having a central axis Ax7 of the third optical fiber Of3 coincides with the central axis Ax1 of the first optical fiber, and 1 is different from the optical connection structure of FIG. 1 in that the inclined end face F3 of the third optical fiber is arranged so as to be parallel to the inclined end face F1 of the first optical fiber and to have a predetermined interval S. . P1 to P3 indicate first to third ports that are the other ends of the first to third optical fibers Of1 to Of3.

  In the optical connection structure configured as described above, when the light beam is incident from the first port P1, the incident light beam is partially inclined at a rate corresponding to the interval S between the inclined end surface F1 and the inclined end surface F3. The light passes through the end face F1 and the inclined end face F3, enters the third optical fiber Of3, is emitted from the third port P3, and the others are reflected by the inclined end face F1 and pass through the second optical fiber Of2, and the second optical fiber Of2. The light is emitted from the port P2. As a result, it functions as an optical demultiplexer.

  On the other hand, when the light beams are respectively incident from the second port P2 and the third port P3, the two incident light beams are combined at the inclined end face F1 of the first optical fiber and are incident on the first optical fiber. Incident light is emitted from the first port P1. As a result, it functions as an optical multiplexer.

  Therefore, the present optical connection structure functions as an optical multiplexer / demultiplexer, and the optical wiring can be routed in a T shape. Hereinafter, the optical connection structure as shown in FIG. 3 is referred to as T-shaped coupling.

  Next, the shape memory alloy used in the embodiment will be described.

  Even if a certain kind of metal is subjected to a large deformation at a low temperature, a phenomenon in which the state before the deformation is restored by heating to a high temperature is called a shape memory effect. A metal exhibiting a shape memory effect is called a shape memory alloy.

  Biometal (Biometal registered trademark) manufactured by Toki Corporation is one that uses this shape memory effect. Biometal is a Ti-Ni type shape memory alloy. It is supplied in the form of a thin wire like an optical fiber called a biometal fiber that is easily energized and exhibits excellent performance in use in the pulling direction. This biometal fiber is a kind of anisotropic material with improved characteristics in the pulling direction (longitudinal direction), and a certain length is memorized. When heated in a state of tensile deformation, Contracts and relaxes when cooled. Compared with a general shape memory alloy, a biometal fiber has a very small force required for deformation, so that a shape recovery force (tensile force) can be effectively extracted. Biometal fibers can be used repeatedly with large strain in the tensile direction, and have electrical resistance close to that of nichrome wire, so they are used as actuators for energization heating drive, and are excellent when used in energization heating. Operating characteristics are shown. In addition, the material characteristics and mechanical properties are stable, and a large stable operation strain of 2 to 3% or more can be used by pulling, and 4% or more is possible depending on the use conditions.

In this embodiment, this biometal fiber is used as the shape memory alloy.
(Embodiment 1)
The optical switch according to the first embodiment will be described with reference to the drawings. FIG. 4 is a diagram illustrating a configuration of the optical switch according to the first embodiment.

  First, the configuration of the optical switch according to the first embodiment will be described. Throughout the drawings, the same reference numerals indicate the same or corresponding parts. Mf is a shape memory alloy. Ax8 is the central axis of the shape memory alloy Mf. The shape memory alloy Mf has a shape in which the cross section is circular and has a shape extending in the direction of the central axis, and expands and contracts due to a change in temperature. The shape memory alloy Mf contracts when heated, and relaxes when cooled. Of1 and Of2 are a first optical fiber and a second optical fiber, and their end faces are perpendicular to the central axes Ax1 and Ax2.

  As shown in FIG. 4, the cross section of the shape memory alloy Mf is bonded and fixed to the side surface of the first optical fiber, and the central axis Ax1 of the first optical fiber Of1 and the central axis Ax8 of the shape memory alloy Mf are orthogonal to each other. The plurality of second optical fibers Of2 are arranged such that their respective central axes Ax2 are in the same direction as the central axis Ax1 of the first optical fiber Of1, and in the direction perpendicular to the central axis Ax1 It is composed of several.

  Next, the operation of the optical switch according to the first embodiment will be described. First, in the state shown in FIG. 4A, the central axis Ax1 of the first optical fiber Of1 and the central axis Ax2 of the leftmost second optical fiber Of2 are on a straight line. In this state, if a light beam is emitted through the first optical fiber Of1, the light beam is emitted along the central axis Ax1 of the first optical fiber Of1, so that the leftmost The light enters the core of the second optical fiber Of2 and propagates through the leftmost second optical fiber Of2.

  Since the shape memory alloy Mf has an electrical resistance close to that of a nichrome wire, for example, when electricity is passed through the shape memory alloy Mf, energization heating occurs, and the shape memory alloy Mf is heated. Therefore, the shape memory alloy Mf contracts due to the shape memory effect. Therefore, if a part of the shape memory alloy Mf is fixed, the optical fiber Of1 bonded and fixed to the shape memory alloy Mf moves to the right along the central axis Ax8 of the shape memory alloy Mf. And about the movement amount of the 1st optical fiber Of1 at this time, if it investigates how much the shape memory alloy Mf shrink | contracts by the quantity of the electricity sent to the shape memory alloy Mf, the calorific value by it, and heat generation, It can be controlled easily.

  By contracting the shape memory alloy Mf as described above, the center axis Ax1 of the first optical fiber Of1 and the second position from the left as shown in FIG. 4B from the state of FIG. The first optical fiber Of1 is moved to a position where the center axis Ax2 of the second optical fiber Of2 is on the same straight line. In this state, if a light beam is emitted through the first optical fiber Of1, the light beam is emitted along the central axis Ax1 of the first optical fiber Of1, and thus the second position from the left as it is. Is incident on the second optical fiber Of2 and propagates through the second optical fiber Of2.

  Similarly, by controlling the movement amount of the shape memory alloy Mf, one of the second optical fibers Of2 in which a plurality of light beams emitted from the first optical fiber Of1 are arranged is selected. Can be propagated.

  In FIG. 4, the gap between the first optical fiber Of1 and the second optical fiber Of2 is drawn wide for easy viewing, but the actual first optical fiber Of1 and second optical fiber are actually shown. The gap with Of2 may be a gap that is necessary for propagation with little loss of the light beam from the first optical fiber Of1 to the second optical fiber Of2. Further, a matching oil in which a loss that occurs during input / output of the light beam between the optical fibers is lower than that in the case where the light beam propagates in the air is used for the first optical fiber Of1 and the second optical fiber Of2. If the gap is satisfied, the loss of the light beam between the optical fibers can be made substantially equal to zero.

  The shape memory alloy Mf may be heated by, for example, heating by applying light such as infrared rays or heating by blowing warm air.

  The above-mentioned optical switch configuration is formed on a substrate having buoy grooves and pins used for assembling a circuit with an optical fiber, and other circuits are added to the optoelectronic integrated device. Is formed. In that case, since the shape of the shape memory alloy Mf is the same as that of the optical fibers Of1 and Of2, the optical switch is formed on a substrate having a buoy groove or a pin used when a circuit is assembled with the optical fiber described above. Since the shape memory alloy can be fixed with a buoy groove or a pin, a circuit can be easily assembled.

  As described above, the optical switch according to the first embodiment moves the first optical fiber by expanding and contracting the shape memory alloy bonded and fixed to the first optical fiber by applying a temperature change by energization heating or the like. Since one of the plurality of second optical fibers is selected and the light beam emitted from the first optical fiber is incident on the selected second optical fiber, The optical path can be changed with high accuracy. Also, since the shape memory alloy has the same shape as the optical fiber, it can be installed on a substrate that has a buoy groove, a pin, etc., and can fix the optical fiber with them, thereby creating an optoelectronic integrated device. Thus, an optoelectronic integrated device capable of complex control can be produced.

(Embodiment 2)
The optical switch according to the second embodiment will be described with reference to the drawings. FIG. 5 is a diagram illustrating a configuration of the optical switch according to the second embodiment.

  First, the configuration of the optical switch according to the second embodiment will be described. Throughout the drawings, the same reference numerals indicate the same or corresponding parts. Mf is a shape memory alloy, and Ax8 is the central axis of the shape memory alloy Mf. The shape memory alloy Mf has a shape in which the cross section is circular and has a shape extending in the direction of the central axis, and expands and contracts due to a change in temperature. Specifically, the shape memory alloy Mf contracts when heated, and relaxes when cooled. Further, an inclined end face m having an angle of 45 degrees with respect to the central axis Ax8 is formed at one end of the shape memory alloy Mf, and a metal mirror 3 is formed by forming a metal thin film by depositing metal on the inclined end face m. Has been. Of1 and Of2 are a first optical fiber and a second optical fiber, and the end faces are end faces perpendicular to the central axes Ax1 and Ax2. Further, there are a plurality of second optical fibers Of2 and shape memory alloys Mf, and the number thereof is the same.

  In the optical switch according to the second embodiment, as shown in FIG. 5, the center axis Ax1 of the first optical fiber and the center axes Ax8 of the plurality of shape memory alloys Mf are orthogonal to each other, and the plurality of shape memory alloys Mf are A plurality of second optical fibers Of2 are arranged side by side in the direction perpendicular to the central axis Ax8, and the central axes Ax2 of the plurality of second optical fibers Of2 and the central axes Ax8 of the shape memory alloy Mf are configured to be the same.

  Next, the operation of the optical switch according to the second embodiment will be described. First, in the state shown in FIG. 5A, electricity is applied to the shape memory alloy Mf other than the uppermost one of the shape memory alloys Mf to cause energization heating. As the temperature rises, the shape memory alloys Mf other than the uppermost stage shrink. Therefore, if a part of the shape memory alloy Mf is fixed, the inclined end face m is moved to the left due to the contraction. The amount of movement can be easily controlled by examining the amount of electricity flowing through the shape memory alloy Mf, the amount of heat generated thereby, and how much the shape memory alloy Mf contracts due to heat generation. At this time, when the light beam is emitted from the first optical fiber Of1, the light beam is reflected at the central portion of the metal mirror 3 formed on the inclined end surface m of the uppermost shape memory alloy Mf that is not contracted. Then, the light enters the core of the uppermost second optical fiber Of2 and propagates through the uppermost second optical fiber Of2.

  Next, when electricity is applied to the shape memory alloy Mf other than the shape memory alloy at the second stage from the top and energization heating is performed, the inclination of the shape memory alloy at the second stage from the top as shown in FIG. Except for the end face m, it has moved to the left. At this time, when the light beam is emitted from the first optical fiber Of1, the light beam is reflected at the central portion of the metal mirror 3 formed on the inclined end surface m of the second-stage shape memory alloy Mf from the top. Then, it propagates through the second optical fiber Of2 at the second stage from the top.

  Similarly, by controlling the movement amount of the shape memory alloy Mf, one of the second optical fibers Of2 in which a plurality of light beams emitted from the first optical fiber Of1 are arranged is selected. Can be propagated.

  As in the first embodiment, the gap between the optical fibers or between the optical fiber and the shape memory alloy is set to an appropriate value, and by using matching oil in the gap, the loss of the light beam can be made substantially equal to zero. .

  The shape memory alloy Mf may be heated by, for example, heating by applying light such as infrared rays or heating by blowing warm air.

  The above-mentioned optical switch configuration is formed on a substrate having buoy grooves and pins used for assembling a circuit with an optical fiber, and other circuits are added to the optoelectronic integrated circuit to perform various functions. A device is formed. In that case, since the shape of the shape memory alloy Mf is the same as that of the optical fibers Of1 and Of2, the buoy grooves and pins are formed on the substrate having the buoy grooves and pins used when the circuit is assembled with the optical fibers. Since the shape memory alloy can be fixed by, for example, an optoelectronic integrated circuit including the optical switch can be easily assembled on the substrate.

  As described above, according to the optical switch according to the second embodiment, a plurality of sets of the shape memory alloy and the second optical fiber are arranged in a direction perpendicular to the central axis so that the central axes are on the same straight line. Then, a shape memory alloy having a central axis that is collinear with the second optical fiber to which light is to be incident is selected from a plurality of shape memory alloys, and the shape memory alloy having the selected metal mirror is energized and heated. The light beam emitted from the first optical fiber is reflected and incident on the second optical fiber by moving the position of the inclined end surface of the shape memory alloy by expanding and contracting by applying a temperature change in Therefore, the optical path can be easily changed with high accuracy. Also, since the shape memory alloy has the same shape as the optical fiber, it can be installed on a substrate that has a buoy groove, a pin, etc., and can fix the optical fiber with them, thereby creating an optoelectronic integrated device. Thus, an optoelectronic integrated device capable of complex control can be produced.

(Embodiment 3)
The optical crossbar according to the third embodiment will be described with reference to the drawings. FIG. 6 is a diagram illustrating a configuration of the optical crossbar according to the third embodiment.

  First, the configuration of the optical crossbar according to the third embodiment will be described. Throughout the drawings, the same reference numerals indicate the same or corresponding parts. Mf1 is the first shape memory alloy, Ax10 is the central axis of the first shape memory alloy Mf1, Mf2 is the second shape memory alloy, and Ax11 is the second shape memory alloy Mf2. Is the central axis. The first shape memory alloy Mf1 and the second shape memory alloy Mf2 have a circular cross section and have shapes extending in the directions of the central axes Ax10 and Ax11, and the directions of the central axes Ax10 and Ax11 due to changes in temperature. It has a feature to expand and contract. Specifically, the first shape memory alloy Mf1 and the second shape memory alloy Mf2 contract when heated, and relax when cooled. One end of the first shape memory alloy Mf1 has an angle of 45 degrees with respect to the central axis Ax10, and the first inclined surface k1 and the first inclined surface k1 and 180 degrees symmetrical with respect to the central axis Ax10, respectively. A second inclined surface k2 is formed, and a first metal mirror 4 is formed on the first inclined surface k1 and the second inclined surface k2 by forming a metal thin film by vapor deposition of metal. Similarly, one end of the second shape memory alloy Mf2 has an angle of 45 degrees with respect to the central axis Ax11, and a third inclined surface at a position symmetrical to the central axis Ax11 by 180 degrees. k3 and a fourth inclined surface k4 are formed, and a second metal mirror 5 is formed on the third inclined surface k3 and the fourth inclined surface k4 by forming a metal thin film by vapor deposition of metal. . Of1, Of2, Of3, Of4 are the first optical fiber, the second optical fiber, the third optical fiber, and the fourth optical fiber, and the end faces of the optical fibers have their respective central axes Ax1 and Ax2, It is an end surface perpendicular to Ax7 and Ax9.

  As shown in FIG. 6, the first and second optical fibers Of1 and Of2 are arranged in a direction perpendicular to the central axes Ax1 and Ax2 of the respective optical fibers, and the third and fourth optical fibers Of3 and Of4. The respective end faces of the first optical fiber Of1 and the second optical fiber Of2 are configured to face each other perpendicular to the end face, and the center axis Ax1 of the first optical fiber Of1 is the third optical fiber. The center axis Ax2 of the second optical fiber Of2 is positioned on the same straight line as the center axis Ax9 of the fourth optical fiber Of4. The central axes Ax10 and Ax11 of the first and second shape memory alloys Mf1 and Mf2 are located on the same straight line, and are perpendicular to the central axes Ax1, Ax2, Ax7, and Ax9 of the optical fibers. It is configured.

  Next, the operation of the optical crossbar according to the third embodiment will be described. First, in the state shown in FIG. 6A, the first metal mirror 4 of the first shape memory alloy Mf1 is located between the first optical fiber Of1 and the third optical fiber Of3. In addition, the second metal mirror 5 of the second shape memory alloy Mf2 is located between the second optical fiber Of2 and the fourth optical fiber Of4. In this state, when a light beam is emitted from the end face of the first optical fiber Of1, the light beam is reflected by the first metal mirror 4 around the center of the first inclined surface k1, and the center of the shape memory alloy. The light travels in the same direction as the axes Ax10 and Ax11, is reflected by the second metal mirror 5 around the center of the third inclined surface k3, enters the core of the second optical fiber Of2, and enters the second optical fiber Of2. Will propagate. Conversely, when a light beam is emitted from the second optical fiber Of2, the light travels in the opposite path to the previous one and propagates through the first optical fiber Of1. When the light beam is emitted from the end face of the third optical fiber Of3, the light beam is reflected by the first metal mirror 4 around the center of the second inclined surface k2, and the center axis Ax10 of the shape memory alloy , Proceeding in the same direction as Ax11, reflected by the second metal mirror 5 around the center of the fourth inclined surface k4, incident on the core of the fourth optical fiber Of4, and propagated through the fourth optical fiber Of4 I will do it. Conversely, when a light beam is emitted from the fourth optical fiber Of4, the light travels in the reverse path to the previous one and propagates through the third optical fiber Of3. That is, in this state, the first optical fiber Of1 and the second optical fiber Of2 are connected, and the third optical fiber Of3 is connected to the fourth optical fiber Of4.

  However, when electricity is applied to the first shape memory alloy Mf1 and the second shape memory alloy Mf2 and energization heating is performed, the first and second shape memory alloys Mf1 and Mf2 contract due to temperature rise. Accordingly, if a part of each of the first and second shape memory alloys Mf1 and Mf2 is fixed, the first metal mirror 4 moves to the left as shown in FIG. The second metal mirror 5 moves in the right direction. The amount of movement is determined by how much the first and second shape memory alloys Mf1 and Mf2 contract due to the amount of electricity flowing through the first and second shape memory alloys Mf1 and Mf2 and the amount of heat and heat generated thereby. If you check, you can easily control. In this state, when a light beam is emitted from the end face of the first optical fiber Of1, it enters the core of the third optical fiber Of3 and propagates through the third optical fiber Of3. Further, when a light beam is emitted from the end face of the second optical fiber Of2, it propagates through the fourth optical fiber Of4. When a light beam is emitted from the end face of the third optical fiber Of3, it enters the core of the first optical fiber Of1 and propagates through the first optical fiber Of1. Further, when a light beam is emitted from the end face of the fourth optical fiber Of4, it propagates through the second optical fiber Of2. That is, in this state, the first optical fiber Of1 and the third optical fiber Of3 are connected, and the second optical fiber Of2 and the fourth optical fiber Of4 are connected. Thus, the conduction | electrical_connection between optical fibers can be switched by moving the 1st and 2nd shape memory alloys Mf1 and Mf2 simultaneously.

  As in the first embodiment, the gap between the fibers or between the fiber and the shape memory alloy is set to an appropriate value, and the matching oil is used in the gap to make the light beam loss substantially equal to zero. Can do.

  The first and second shape memory alloys Mf1 and Mf2 may be heated by, for example, heating by applying light such as infrared rays or heating by blowing warm air.

  In addition, the above-mentioned optical crossbar configuration is formed on a substrate having buoy grooves and pins used for assembling circuits with optical fibers, and other circuits are added to the optoelectronic integrated circuit to perform various functions. A device is formed. In that case, since the shapes of the first and second shape memory alloys Mf1 and Mf2 are the same as those of the optical fibers Of1, Of2, Of3 and Of4, Since the shape memory alloy can be fixed on the substrate having pins or the like by the buoy grooves or pins, the circuit of the optoelectronic integrated device including the optical crossbar can be easily assembled on the substrate.

  As described above, according to the optical crossbar according to the third embodiment, the first and second optical fibers are aligned in the direction perpendicular to the central axes Ax1 and Ax2 of the respective optical fibers, and the third and Each of the end faces of the four optical fibers is configured to face each of the vertical end faces of the first and second optical fibers, and the center axis of the first optical fiber is the center axis of the third optical fiber. The central axis of the second optical fiber is the same as the central axis of the fourth optical fiber, and the central axes of the first and second shape memory alloys are perpendicular to the central axis of the optical fiber. And one end of the shape memory alloy has an angle of 45 degrees with respect to the central axis, and two inclined surfaces are formed at positions 180 degrees symmetrical with respect to the central axis, Gold on which the metal thin film is formed by depositing metal on the inclined surface A mirror is formed, and the conduction of optical fibers is switched by moving the shape memory alloy inclined surface by moving the shape memory alloy by expanding the temperature by applying a temperature change to the shape memory alloy. Therefore, there is an effect that the connection between the optical fibers can be easily and accurately performed.

  Also, since the shape memory alloy has the same shape as the optical fiber, it can be installed on a substrate that has a buoy groove, a pin, etc., and can fix the optical fiber with them, thereby creating an optoelectronic integrated device. Thus, an optoelectronic integrated device capable of complex control can be produced.

In the above description, the optical crossbar in the case where there are two optical fibers whose light conduction can be switched has been described. However, as shown in FIG. 14, the shape memory alloy has a rectangular cross section instead of a circle, In addition, by forming a rectangular metal mirror on one end face thereof in the same manner as in the third embodiment, an add / drop switch that can switch the conduction of light propagating through a plurality of optical fibers arranged in parallel at once. Can be realized. Hereinafter, such an add / drop switch will be described as a first modification of the third embodiment.
(Modification 1 of Embodiment 3)
An add / drop switch according to Modification 1 of Embodiment 3 will be described with reference to the drawings. FIG. 15 is a diagram illustrating a configuration of an add / drop switch according to the first modification of the third embodiment.

  First, the configuration of Modification 1 of Embodiment 3 will be described. Throughout the drawings, the same reference numerals indicate the same or corresponding parts. Ms1 and Ms2 are first and second shape memory alloys, and ax1 and ax2 are center lines of the longitudinal section. The first and second shape memory alloys Ms1 and Ms2 have a rectangular cross section and have shapes extending in the direction of the center lines ax1 and ax2 of the longitudinal section. It has the feature of expanding and contracting in the ax2 direction. Specifically, the first and second shape memory alloys Ms1, Ms2 expand and contract when heated, and relax when cooled. Then, one end of the first shape memory alloy Ms1 has an angle of 45 degrees with respect to the center line ax1, and the first inclined surface k1 and the second surface at positions 180 degrees symmetrical with respect to the center line ax1. The first inclined surface k2 is formed, and the first and second inclined surfaces k1 and k2 are formed with the first metal mirror 4 in which a metal film is formed by vapor deposition of metal as in the third embodiment. Has been. Similarly, the second shape memory alloy Ms2 also has an angle of 45 degrees with respect to the center line ax2 of the longitudinal section at one end thereof, and the third inclined surface k3 and the fourth inclined surface at positions 180 degrees symmetrical respectively. An inclined surface k4 is formed, and a second metal mirror 5 is formed on the third and fourth inclined surfaces.

Of ₁ , Of ₂ 1, Of ₃ 1, Of ₄ 1 are the first optical fiber group Of ₁ , the second optical fiber group Of ₂ , the third optical fiber group Of ₃ , and the fourth optical fiber group Of ₃ . Upon each single first optical fiber group of _4, in the modified example of the third embodiment, for example, an optical fiber of eight to each optical fiber group are arranged in parallel. Further, as shown in FIG. 15, the end faces of the optical fibers of the first and second optical fiber groups Of ₁ and Of ₂ are arranged in a direction perpendicular to the central axes Ax1 and Ax2, and the third The end faces of the optical fibers of the fourth optical fiber group Of ₃ and Of ₄ are configured to face the end faces of the optical fibers of the first and second optical fiber groups Of ₁ and Of _2. The center axis Ax1 of each optical fiber of the _first optical fiber group Of1 and the center axis Ax7 of each optical fiber of the _third optical fiber group Of3 are located on the same straight line, and the second optical fiber group of central axis Ax2 of the optical fiber ₂ and the center axis Ax9 fourth of each optical fiber of the optical fiber group of ₄ are located on the same straight line. That is, the first to eighth optical axes of the first optical fiber group Of ₁ and the third optical fiber group Of ₃ are on the same straight line, and the first optical fiber group and the second optical fiber The central axes from the first to the eighth of the group are arranged in parallel. The center line ax1 of the longitudinal cross section of the first shape memory alloy Ms1 and the center line ax2 of the longitudinal cross section of the second shape memory alloy Ms2 are located on the same straight line, with respect to the central axis of all optical fibers. Are configured to be vertical.

Next, the operation of the add / drop switch according to the first modification of the third embodiment will be described. First, in the state shown in FIG. 15A, the first metal mirror 4 of the first shape memory alloy Ms1 is located between the first optical fiber group Of ₁ and the third optical fiber group Of _3. ing. The second metal mirror 5 is located between the second optical fiber group Of ₂ and the fourth optical fiber group Of ₄ . In this state, when a light beam is emitted from the end face of each optical fiber of the _first optical fiber group Of1, the light beam is reflected by the first metal mirror 4 around the center of the first inclined surface k1. , Proceeding in the same direction as the center lines ax1 and ax2 of the longitudinal cross section of the shape memory alloy, reflected by the second metal mirror 5 around the center of the third inclined surface k3, and each of the _second optical fiber group Of ₂ The light enters the core of the optical fiber and propagates through the optical fiber. Conversely, when a light beam is emitted from the end face of each optical fiber of the second optical fiber group Of ₂ , it travels in the opposite path to the previous _one and propagates through each optical fiber of the _first optical fiber group Of _1. I will do it. Further, when a light beam is emitted from the end face of each optical fiber of the third optical fiber group Of ₃ , the light beam is reflected by the first metal mirror 4 around the center portion of the second inclined surface k 2, and has a shape. The optical fiber core of the _fourth optical fiber group Of ₄ is processed in the same direction as the center lines ax1 and ax2 of the longitudinal section of the memory alloy and reflected by the second metal mirror 5 around the center of the fourth inclined surface k4. And propagates through the optical fiber. Conversely, when a light beam is emitted from each optical fiber of the fourth optical fiber group Of ₄ , the light travels in the opposite path to the previous one, and propagates through each optical fiber of the _third optical fiber group Of _3. Go. That is, in this state, each optical fiber of the _first optical fiber group Of _{1 and} the optical fiber of the second optical fiber group Of ₂ are connected, and each optical fiber of the _third optical fiber group Of ₃ is the fourth optical fiber. in communication with each of the optical fiber of the optical fiber of _4.

However, when electricity is applied to the first shape memory alloy Ms1 and the second shape memory alloy Ms2 and energization heating is performed, the first and second shape memory alloys Ms1 and Ms2 contract due to temperature rise. Therefore, if a part of the first and second shape memory alloys Ms1 and Ms2 is fixed, as shown in FIG. 15 (b), the first metal mirror 4 moves upward in the second metal. The mirror 5 moves downward. The amount of movement is determined by how much the first and second shape memory alloys Ms1 and Ms2 contract due to the amount of electricity flowing through the first and second shape memory alloys Ms1 and Ms2 and the amount of heat and heat generated thereby. If you check, you can easily control. In this state, when a light beam is emitted from the end face of each optical fiber of the _first optical fiber group Of ₁ , it enters the core of each optical fiber of the _third optical fiber group Of ₃ and passes through the optical fiber. On the contrary, when a light beam is emitted from the end face of each optical fiber of the _third optical fiber group Of ₃ , it propagates through each optical fiber of the first optical fiber group Of ₁ . When a light beam is emitted from the end face of each optical fiber of the _second optical fiber group Of2, it propagates through each optical fiber of the _fourth optical fiber group Of4, and conversely, the fourth optical fiber. When a light beam is emitted from the end face of each optical fiber of the group Of ₄ , it propagates through each optical fiber of the _second optical fiber group Of ₂ . That is, in this state, each optical fiber of the _first optical fiber group Of ₁ and each optical fiber of the third optical fiber group Of ₃ are connected, and each optical fiber Of ₂ of the _second optical fiber group is connected to the first optical fiber Of ₂ . The four optical fibers Of 4 of the optical fiber group ₄ are connected.

  As described above, in the add / drop switch according to the first modification of the third embodiment, the conduction of light propagating through the optical fibers arranged in parallel can be easily and accurately switched at a time. it can.

  Furthermore, in the above description, as the shape memory alloy Ms, a metal mirror is formed by vapor-depositing a metal on one end thereof, and the case where the metal mirror and the shape memory alloy are integrated has been described. As shown in FIG. 16, the shape memory alloy Ms is separated from the metal mirror and the shape memory alloy, and a right-angled isosceles triangular mirror T is provided at the tip of the shape memory alloy having two circular cross sections. It may be attached. The mirror T attached to the tip of the shape memory alloy may be aluminum or plastic deposited with metal. In this way, since the cross-section of the shape memory alloy becomes small, when flowing electricity to the shape memory alloy to conduct current heating, variation in the amount of movement of the shape memory alloy can be reduced. There is an effect that it is easy to control the direction of movement of the shape memory alloy in the vertical direction.

  In the first modification of the third embodiment, the gap between the fibers or between the fiber and the shape memory alloy is set to an appropriate value as in the first embodiment, and matching oil is used for the gap. Thus, the loss of the light beam can be made substantially equal to zero, and the method of heating the first and second shape memory alloys Ms1 and Ms2 is, for example, heating by applying light by infrared rays or the like, A method such as heating by blowing warm air may be used.

Further, the add-drop switch formed by attaching the mirror T to the tip of the shape memory alloy having the circular shape in the two cross sections described above has two shape memories each supporting the first and second mirrors T1 and T2. The alloys Mf1 to Mf4 are energized and heated by simultaneously flowing electricity and moved simultaneously to switch the conduction between the optical fibers. However, as shown in FIG. 17, two sets of shape memory alloys having different lengths are used. By attaching the mirror T to each, one set of shape memory alloys out of the two sets of shape memory alloys may be moved by energization heating, for example, by flowing electricity. Hereinafter, such an add / drop switch will be described as a second modification of the third embodiment.
(Modification 2 of Embodiment 3)
An add / drop switch according to a second modification of the third embodiment will be described with reference to the drawings. FIG. 17 is a diagram illustrating a configuration of an add / drop switch according to the second modification of the third embodiment.

  First, the structure of the modification 2 of Embodiment 3 is demonstrated. Throughout the drawings, the same reference numerals indicate the same or corresponding parts. Mf1 to Mf4 are first, second, third and fourth shape memory alloys, and Ax10 to Ax14 are central axes of the respective shape memory alloys. Each of the shape memory alloys Mf has a feature that the cross section is circular and has a shape extending in the direction of the central axis Ax, and expands and contracts due to a change in temperature. Specifically, the shape memory alloy Mf contracts when heated, and relaxes when cooled. A first mirror T1 is attached to the first and second shape memory alloys Mf1 and Mf2, and the third and fourth lengths are shorter than the first and second shape memory alloys Mf1 and Mf2. A second mirror T2 is attached to the shape memory alloys Mf3 and Mf4. The first and second mirrors T1 and T2 are right-angled isosceles triangular prisms, such as those obtained by vapor-depositing metal on aluminum or plastic. Then, the third and fourth shape memory alloys Mf3 and Mf4 are arranged inside the first and second shape memory alloys Mf1 and Mf2.

Next, the operation of the add / drop switch according to the second modification of the third embodiment will be described. First, when electricity is supplied only to the first and second shape memory alloys Mf1 and Mf2 and energization heating is performed, the first and second shape memory alloys Mf1 and Mf2 contract due to the temperature rise, and the third and fourth shapes The shape memory alloys Mf3 and Mf4 are elongated. Therefore, if a part of the first, second, third, and fourth shape memory alloys Mf1, Mf2, Mf3, and Mf4 is fixed on the same substrate, as shown in FIG. The first mirror T1 attached to the first and second shape memory alloys Mf1 and Mf2 is downward, and the second mirror T2 attached to the third and fourth shape memory alloys Mf3 and Mf4 is upward. Move in the direction. The amount of movement is how much the first and second shape memory alloys Mf1 and Mf2 contract due to the amount of electricity flowing through the first and second shape memory alloys Mf1 and Mf2 and the amount of heat and heat generated thereby. If you check, you can easily control. At this time, the first mirror T1 is located between the first optical fiber group Of ₁ and the third optical fiber group Of _3, the second mirror T2, the second optical fiber group Of ₂ and the 4 is located between the optical fiber group of _4. In this state, when a light beam is emitted from the end face of each optical fiber of the _first optical fiber group Of1, the light beam is reflected by the first mirror T1, and the center of the first and second shape memory alloys The light travels in the same direction as the axes Ax10 and Ax11, is reflected by the second mirror T2, enters the core of each optical fiber of the _second optical fiber group Of2, and propagates through the optical fiber. Conversely, when a light beam is emitted from the end face of each optical fiber of the second optical fiber group Of ₂ , it travels in the opposite path to the previous _one and propagates through each optical fiber of the _first optical fiber group Of _1. I will do it. Further, when the third light beam from the end face of each optical fiber of the optical fiber group Of ₃ is emitted, the light beam is reflected by the first mirror T1, the central axis of the third and fourth shape memory alloy Ax12 Then, the light travels in the same direction as Ax13, is reflected by the second mirror T2, enters the core of the optical fiber of the _fourth optical fiber group Of4, and propagates through the optical fiber. On the other hand, when a light beam is emitted from each optical fiber of the fourth optical fiber group Of ₄ , the light beam travels in the opposite path and propagates through each optical fiber of the _third optical fiber group Of _3. To go. That is, in this state, each optical fiber of the _first optical fiber group Of _{1 and} the optical fiber of the second optical fiber group Of ₂ are connected, and each optical fiber of the _third optical fiber group Of ₃ is the fourth optical fiber. in communication with each of the optical fiber of the optical fiber of _4.

Here, when electricity is supplied only to the third and fourth shape memory alloys Mf3 and Mf4 and energization heating is performed, the third and fourth shape memory alloys Mf3 and Mf4 are contracted by the temperature rise, and the first and first shape memory alloys Mf3 and Mf4 are contracted. The shape memory alloys Mf1 and Mf2 of No. 2 are stretched because they are not energized and heated. Therefore, if a part of the first, second, third and fourth shape memory alloys Mf1, Mf2, Mf3, Mf4 is fixed on the same substrate, as shown in FIG. The first mirror T1 attached to the first and second shape memory alloys Mf1, Mf2 is upward, and the second mirror T2 attached to the third and fourth shape memory alloys Mf3, Mf4. Moves down. The amount of movement is determined by how much the third and fourth shape memory alloys Mf3 and Mf4 contract due to the amount of electricity flowing through the third and fourth shape memory alloys Mf3 and Mf4 and the amount of heat and heat generated thereby. If you check, you can easily control. In this state, when a light beam is emitted from the end face of each optical fiber of the _first optical fiber group Of ₁ , it enters the core of each optical fiber of the _third optical fiber group Of ₃ and passes through the optical fiber. On the contrary, when a light beam is emitted from the end face of each optical fiber of the _third optical fiber group Of ₃ , it propagates through each optical fiber of the first optical fiber group Of ₁ . When a light beam is emitted from the end face of each optical fiber of the _second optical fiber group Of2, it propagates through each optical fiber of the _fourth optical fiber group Of4, and conversely, the fourth optical fiber. When a light beam is emitted from the end face of each optical fiber of the group Of ₄ , it propagates through each optical fiber of the _second optical fiber group Of ₂ . That is, in this state, each optical fiber of the _first optical fiber group Of ₁ and each optical fiber of the third optical fiber group Of ₃ are connected, and each optical fiber Of ₂ of the _second optical fiber group is connected to the first optical fiber Of ₂ . The four optical fibers Of 4 of the optical fiber group ₄ are connected.

As described above, in the add / drop switch according to the second modification of the third embodiment, the heights of the first and second shape memory alloys Mf1 and Mf2 to which the first mirror T1 is attached are set to the second mirror T2. The height of the third and fourth shape memory alloys Mf3 and Mf4 to be attached is higher than the height of the first and second shape memory alloys Mf1 and Mf2, and the third and fourth shape memory alloys Mf3 and Mf4. One of them is expanded and contracted by applying a temperature change by energization heating or the like, and the first and second mirrors T1 and T2 are moved up and down to change the conduction between the optical fibers. There is no need to energize the shape memory alloy of the book, and there is an effect that switching between a plurality of optical fibers arranged in parallel can be performed easily and more accurately at a time. There is also an effect that the four shape memory alloys can be provided on the same substrate.
(Embodiment 4)
The optical filter according to the fourth embodiment will be described with reference to the drawings. FIG. 7 is a diagram illustrating a configuration of the optical filter according to the fourth embodiment.

  First, the configuration of the optical filter according to the fourth embodiment will be described. Throughout the drawings, the same reference numerals indicate the same or corresponding parts. Mf1 is a first shape memory alloy, and Ax10 is the central axis of the first shape memory alloy Mf1. Mf2 is the second shape memory alloy, and Ax11 is the central axis of the second shape memory alloy Mf2. The first shape memory alloy Mf1 and the second shape memory alloy Mf2 have a circular cross section and a shape extending in the directions of the central axes Ax10 and Ax11. It has the feature to do. Specifically, the first shape memory alloy Mf1 and the second shape memory alloy Mf2 contract when heated and relax when cooled. In addition, an inclined end face m1 having an angle of 45 degrees with respect to the central axis Ax10 is formed at one end of the first shape memory alloy Mf1, and after depositing a metal on the inclined end face m1, a dielectric is formed, A first optical wavelength filter 6 that is a Fabry-Perot optical wavelength filter is formed. The first optical wavelength filter 6 has a characteristic that the reflection characteristics differ depending on the wavelength of the incident light beam. In addition, an inclined end face m2 having an angle of 45 degrees with respect to the central axis Ax11 is formed at one end of the second shape memory alloy Mf2, and a dielectric such as glass is formed after metal is deposited on the inclined end face m2. Thus, the second optical wavelength filter 7 which is a Fabry-Perot type optical wavelength filter is formed. The second optical wavelength filter 7 has a feature that the reflection angle differs depending on the wavelength of the incident light beam. Of1 and Of2 are a first optical fiber and a second optical fiber, and their end faces are perpendicular to the central axes Ax1 and Ax2.

  The optical filter according to the fourth embodiment is arranged so that the central axis Ax1 of the first optical fiber Of1 and the central axis Ax10 of the first shape memory alloy Mf1 are orthogonal to each other as shown in FIG. In addition, the central axis Ax1 of the first optical fiber Of1 and the central axis Ax11 of the second shape memory alloy Mf2 are arranged to be the same, and the central axis Ax10 of the first shape memory alloy Mf1 and the second axis The center axis Ax2 of the optical fiber Of2 is configured to be located on the same straight line.

  Next, the operation of the optical filter according to the fourth embodiment will be described. First, in the state shown in FIG. 7 (a), the first shape memory alloy Mf1 is kept in a relaxed state without electricity, and the second shape memory alloy Mf2 is energized and heated. Wake up and contract. The light beam emitted from the first optical fiber Of1 is reflected by the central portion of the first optical wavelength filter 6, enters the core of the second optical fiber Of2, and propagates through the second optical fiber Of2. I will do it.

  Next, when electricity is applied to the first shape memory alloy Mf1 to cause energization and heating is prevented from flowing to the second shape memory alloy Mf2, the first shape memory alloy Mf1 contracts, The shape memory alloy Mf2 of No. 2 relaxes to a state as shown in FIG. At this time, when a light beam is emitted from the first optical fiber Of1, it is reflected by the central portion of the second optical wavelength filter 7, enters the core of the second optical fiber Of2, and the second optical fiber Of2. Propagate through.

  For example, the first optical wavelength filter 6 uses a light beam that reflects only light having a wavelength of λ1 among incident light beams at an incident angle of 45 degrees, and the second optical wavelength filter. 7 is a light beam that reflects only light having a wavelength of λ2 among incident light beams at an incident angle of 45 degrees, and the light beam emitted from the first optical fiber Of1 has a wavelength of λ1. And a component of wavelength λ2. When such a light beam is emitted from the first optical fiber Of1 and incident on the second optical fiber Of2 in the state shown in FIG. 7A, the light beam propagates through the second optical fiber Of2. The light is only light having a wavelength of λ1. Further, when the light beam is emitted from the first optical fiber Of1 and incident on the second optical fiber Of2 in the state shown in FIG. 7B, the light beam propagates through the second optical fiber Of2. The light is only light having a wavelength of λ2. That is, by selecting a shape memory alloy that conducts electricity, light of different wavelength components can be selected and propagated in the same optical fiber.

  In the replacement of the first optical wavelength filter 6 and the second optical wavelength filter 7, it is necessary to control the first shape memory alloy Of1 and the second shape memory alloy Of2. The amount of electricity flowing through the second shape memory alloys Mf1 and Mf2, the amount of heat generated by the second shape memory alloys Mf1 and Mf2, and how much the first and second shape memory alloys Mf1 and Mf2 contract due to the heat generation are examined. If the part is fixed, it can be controlled easily.

  As in the first embodiment, the gap between the fibers or between the fiber and the shape memory alloy is set to an appropriate value, and the matching oil is used in the gap to make the light beam loss substantially equal to zero. be able to.

  Further, as the optical wavelength filter, a grating type filter formed by forming a metal thin film after providing an appropriate groove on the inclined end face, or a material having filter characteristics may be used.

  The first and second shape memory alloys Mf1 and Mf2 may be heated by, for example, heating by applying light such as infrared rays or heating by blowing warm air.

  The above-mentioned optical filter configuration is formed on a substrate having buoy grooves and pins used for assembling a circuit with optical fibers, and other circuits are added to the optoelectronic integrated circuit to perform various functions. A device is formed. In that case, since the shapes of the first and second shape memory alloys Mf1 and Mf2 are the same as those of the optical fibers Of1 and Of2, buoy grooves and pins used when the circuit is assembled with the optical fibers are provided. Since the shape memory alloy can be fixed on the substrate having the buoy groove, the pin, or the like, the circuit of the optoelectronic integrated device including the optical filter can be easily assembled on the substrate.

  Further, if this optical filter is used in multiple stages, an optical filter with higher accuracy can be created, and even in that case, integration can be easily performed as described above.

  As described above, according to the optical filter of the fourth embodiment, the light beam emitted from the first optical fiber is reflected by the optical wavelength filter, and only a specific wavelength is incident on the second optical filter. The optical wavelength filter has different characteristics for the first shape memory alloy and the second shape memory alloy, and the shape memory alloy contracts or relaxes by energization heating, whereby the first optical fiber Since the optical wavelength filter that reflects the light beam emitted from the optical fiber is selected so that the wavelength of the light propagating to the second optical fiber can be selected, the desired wavelength can be easily selected from the optical beam. The light of the component can be extracted.

Also, since the shape memory alloy has the same shape as the optical fiber, it can be installed on a substrate that has a buoy groove, a pin, etc., and can fix the optical fiber with them, thereby creating an optoelectronic integrated device. Thus, an optoelectronic integrated device capable of complex control can be produced.
(Embodiment 5)
An optical filter according to the fifth embodiment will be described with reference to the drawings. FIG. 8 is a diagram illustrating the configuration of the optical filter according to the fifth embodiment.

  First, the configuration of the optical filter according to the fifth embodiment will be described. Throughout the drawings, the same reference numerals indicate the same or corresponding parts. Mf is a shape memory alloy. Ax8 is the central axis of the shape memory alloy Mf. The shape memory alloy Mf has a shape in which the cross section is circular and has a shape extending in the direction of the central axis, and expands and contracts due to a change in temperature. Specifically, the shape memory alloy Mf contracts when heated, and relaxes when cooled. In addition, an inclined end face m having an angle of 45 degrees with respect to the central axis Ax8 is formed at one end of the shape memory alloy Mf, and a groove having a fine light wavelength level is provided on the inclined end face m. A metal thin film is formed to form a grating-type optical wavelength filter 8. The optical wavelength filter 8 has a feature that the reflection angle varies depending on the wavelength of the incident light beam. Of1 and Of2 are the first optical fiber and the second optical fiber, and the end faces are end faces perpendicular to the central axes Ax1 and Ax2. There are a plurality of second optical fibers Of2.

  In the optical filter according to the fifth embodiment, as shown in FIG. 8, the central axis Ax1 of the first optical fiber and the central axis Ax8 of the shape memory alloy Mf are orthogonal to each other, and each of the plurality of second optical fibers Of2. Is directed to the optical wavelength filter 8 of the shape memory alloy Mf.

  Next, the operation of the optical filter according to the fifth embodiment will be described. In FIG. 8, the light beam emitted from the first optical fiber Of1 is reflected by the central portion of the optical wavelength filter 8 of the shape memory alloy Mf, enters the second optical fiber Of2 due to the difference in wavelength components, Propagating through the second optical fiber. Here, the optical wavelength filter 8 has a property that the reflection angle varies depending on the wavelength component of the incident light. Also, the reflection characteristics differ depending on the position of the optical wavelength filter 8 that reflects the incident light. That is, the light beam emitted from the first optical fiber Of1 travels along the central axis Ax1 of the first optical fiber Of1, enters the central portion of the optical wavelength filter 8 at an incident angle of 45 degrees, for example, the first optical fiber Of1. The light having a wavelength of λ1 included in the light beam emitted from the optical fiber Of1 travels along the central axis Ax2 of the upper second optical fiber Of2, and enters the core of the upper second optical fiber Of2. Then, it propagates through the upper second optical fiber Of2. In addition, light having a wavelength of λ2 included in the light beam emitted from the first optical fiber Of1 travels along the central axis Ax2 of the lower second fiber Of2, and the light of the lower second optical fiber Of2 The light enters the core and propagates through the lower second optical fiber Of2. That is, from the nature of the optical wavelength filter, if the direction in which the light of the desired wavelength is reflected is known, the second optical fiber Of2 is installed at the position where the light of the desired wavelength is reflected. Light having a desired wavelength included in the light beam emitted from one optical fiber Of1 can be extracted. The angle between the central axis Ax1 of the first optical fiber Of1 and the optical wavelength filter 8 may be other than 45 degrees.

  Furthermore, since the reflection characteristics vary depending on the position of the optical wavelength filter 8, if a part of the shape memory alloy Mf is fixed and electricity is applied and heated in this state, the shape memory alloy Mf contracts. The optical wavelength filter 8 moves to the left. As a result, the light beam from the first optical fiber Of1 is incident on the tip of the optical wavelength filter 8. At that time, a light beam of another wavelength component is incident on the second optical filter Of2 on the upper side or the second optical filter Of2 on the lower side from the tip position. Light can be extracted.

  The amount of movement of the optical wavelength filter 8 can be easily controlled by examining the amount of electricity flowing through the shape memory alloy Mf, the amount of heat generated thereby, and how much the shape memory alloy Mf contracts due to heat generation.

  As in the first embodiment, the gap between the fibers or between the fiber and the shape memory alloy is set to an appropriate value, and the matching oil is used in the gap to make the optical beam loss substantially equal to zero. Can do.

  The shape memory alloy Mf may be heated by, for example, heating by applying light such as infrared rays or heating by blowing warm air.

  The above-mentioned optical filter configuration is formed on a substrate having buoy grooves and pins used for assembling a circuit with optical fibers, and other circuits are added to the optoelectronic integrated circuit to perform various functions. A device is formed. In that case, since the shape of the shape memory alloy Mf is the same as that of the optical fibers Of1 and Of2, the shape memory alloy is formed on the substrate having buoy grooves, pins, etc. used when the circuit is assembled with the optical fiber. Since it can be fixed, the circuit of the optoelectronic integrated device including the optical filter can be easily assembled on the substrate.

  If this optical filter is used in multiple stages, an optical filter with higher accuracy can be created, and even in that case, it can be easily integrated.

  As described above, according to the optical switch of the fifth embodiment, the optical wavelength filter is provided on the shape memory alloy, the light beam emitted from the first optical fiber is reflected, and the desired wavelength component is reflected on the second optical fiber. In addition, the optical wavelength filter has different reflection characteristics depending on the reflection position, and the shape memory alloy is contracted or relaxed by energization heating to move the optical wavelength filter and move the reflection position. As a result, a larger number of wavelengths can be extracted, so that it is possible to easily extract light having a desired wavelength component from the light beam with high accuracy.

Also, since the shape memory alloy has the same shape as the optical fiber, it can be installed on a substrate that has a buoy groove, a pin, etc., and can fix the optical fiber with them, thereby creating an optoelectronic integrated device. Thus, an optoelectronic integrated device capable of complex control can be produced.
(Embodiment 6)
A Michelson interferometer according to the sixth embodiment will be described with reference to the drawings. FIGS. 9A and 9B are diagrams showing the configuration of the Michelson interferometer according to the sixth embodiment. FIG. 9A is a perspective view, FIG. 9B is a diagram as indicated by the arrow K in FIG. 9 (c) is an L arrow diagram of FIG. 9 (a).

  In the figure, the same reference numerals as those in FIGS. 3 and 9 denote the same or corresponding parts, and the sixth embodiment is a direct application of the T-shaped coupling of FIG. That is, the first to third optical fibers Of1 to Of3 have the same structure, and therefore the diameters of the core 1 and the clad 2 are also the same.

  Mf is a shape memory alloy, and Ax8 is the central axis of the shape memory alloy Mf. The shape memory alloy Mf has a feature that the cross section is circular and has a shape extending in the central axis direction, and expands and contracts due to a change in temperature. Specifically, the shape memory alloy Mf contracts when heated, and relaxes when cooled. In addition, one end of the shape memory alloy Mf is perpendicular to the central axis Ax8, and the metal mirror 3 is formed by forming a metal thin film by depositing metal on the end face.

  Each of the first optical fiber Of1, the second optical fiber Of2, and the third optical fiber Of3 has inclined end faces F1 to F3 at one end, and the first, second, and third optical fibers described above. Of1, Of2, Of3 are formed such that the end faces of the ends where the inclined end faces F1, F2, F3 are not formed are perpendicular to the central axis, and the second optical fiber Of2 has a perpendicular end face. A metal mirror 9 is formed by vapor deposition of metal, and the vertical end face of the third optical fiber Of3 and the metal mirror of the shape memory alloy Mf are adjacent to each other with a predetermined distance. Further, the central axis Ax8 of the shape memory alloy Mf and the central axis Ax7 of the third optical fiber Of3 are located on the same straight line. Further, the lengths of the second and third optical fibers Of2, Of3 are different from each other.

  Reference numeral 101 denotes an optical detector for using the output of the Michelson interferometer according to the sixth embodiment. The light detector 101 is composed of a photodiode or the like, is located on the orthogonal axis Ax3 of the first optical fiber and the second optical fiber, and is in contact with the first and second optical fibers Of1, Of2, or Arranged in close proximity. Specifically, for example, a semiconductor in which a photodiode is formed directly below the surface by a semiconductor device manufacturing process is used as an optical bench, and the first and second optical fibers Of1, Of2 are placed on the optical bench. By arranging the connecting portion so as to be located on the photodiode, the arrangement shown in the figure can be realized.

  Next, the operation of the Michelson interferometer configured as described above will be described. When a light beam is incident on the first optical fiber Of1, the incident light beam is demultiplexed at a ratio corresponding to the interval S at the inclined end face F1, and the one demultiplexed light beam is a second light beam. It proceeds along the central axis Ax2 of the fiber Of2 and is reflected by the metal mirror 9, and then returns to the inclined end face F1 of the first optical fiber Of1 along the reverse path, through which a part thereof passes. On the other hand, the other split light beam travels along the central axis Ax7 of the third optical fiber and is emitted to the outside. The light beam emitted to the outside is reflected by the metal mirror 3 of the shape memory alloy Mf, enters the third optical fiber Of3 again, follows the reverse path, and the inclined end surface of the third optical fiber Of3. Returning to F3, part of the light is reflected and combined with the light beam passing through the inclined end face F1 of the first optical fiber Of1, and the combined light beam enters the photodetector 101. . As described above, the length of the second optical fiber Of2 is different from the length of the third optical fiber Of3. As a result, the light beam reflected by the metal mirror 3 of the shape memory alloy Mf and the second light are reflected. Since the optical path length that passes through the light beam reflected by the metal mirror 9 of the fiber Of2 is different, interference occurs between the two light beams, and can therefore be used as an interferometer.

  Further, when electricity is passed through the shape memory alloy Mf and contracted by energization heating, the metal mirror 3 formed on the end face of the shape memory alloy Mf is attached to the third optical fiber Of3 with respect to the third optical fiber Of3. Since it can be moved relatively in the direction parallel to the central axis Ax7, the phase of the light beam reflected by the metal mirror 3 changes according to the distance from the metal mirror 3, and thereby the multiplexing is performed. Since the light intensity due to the interference of the emitted light beam changes, the Michelson interferometer according to the sixth embodiment can be used as an optical switch by detecting the change in the light intensity with the light detector 101.

  The amount of movement of the optical wavelength filter 8 can be easily controlled by examining the amount of electricity flowing through the shape memory alloy Mf, the amount of heat generated thereby, and how much the shape memory alloy Mf contracts due to heat generation.

  As in the first embodiment, the gap between the fibers or between the fiber and the shape memory alloy is set to an appropriate value, and the matching oil is used in the gap to make the light beam loss substantially equal to zero. can do.

  The shape memory alloy Mf may be heated by, for example, heating by applying light such as infrared rays or heating by blowing warm air.

  The above-described interferometer configuration is formed on a substrate having buoy grooves and pins used for assembling circuits with optical fibers, and other circuits are added to the optoelectronic integrated circuit to perform various functions. A device is formed. In that case, since the shape of the shape memory alloy Mf is the same as that of the optical fibers Of1 and Of2, the buoy grooves and pins are formed on the substrate having buoy grooves and pins used when the circuit is assembled with the optical fibers. Since the shape memory alloy can be fixed with pins or the like, the circuit of the optoelectronic integrated device including the interferometer can be easily assembled on the substrate.

  In the above description, the metal film is formed on the end surface of the second optical fiber Of2, and the shape memory alloy Mf is installed on the end surface of the third optical fiber Of3. The shape memory alloy Mf may be installed on the end face, and a metal film may be formed on the end face of the third optical fiber Of3.

  In the above description, the lengths of the second optical fiber Of2 and the third optical fiber Of3 are made different, but the lengths may be the same and the refractive indexes may be made different.

As described above, according to the interferometer of the sixth embodiment, the second and third branch optical paths for the two branched optical paths having the inclined end face at one end and the reflecting face at the other end with respect to the first optical fiber for input. The optical fibers Of2 and Of3 are arranged so that one of them is optically coupled by reflection of the inclined end faces of each other and the side lens action of each other, and the other is arranged so that the inclined end faces of each other face each other at a predetermined interval. A metal mirror is applied to the end surface of the second optical fiber where the inclined end surface is not formed, and a metal mirror is applied to the end surface of the third optical fiber Of3 where the inclined end surface is not formed. By installing a shape memory alloy that expands and contracts due to a temperature change with a mirror formed on the end face, it can be used as a Michelson interferometer. In addition, an optical switch that can be easily created can be obtained by using the interferometer according to the sixth embodiment. Furthermore, the interferometer can be configured by laminating and arranging a plurality of stick-shaped optical fibers and shape memory alloys so that the ends of the optical fibers and the shape memory alloy are twisted approximately 90 degrees. Can be made small enough to be used in an optical device and can be easily produced.
(Embodiment 7)
A semiconductor device according to the seventh embodiment will be described with reference to the drawings. FIG. 10 is a diagram illustrating the configuration of the semiconductor device according to the seventh embodiment. FIG. 11 is a diagram illustrating a state in which semiconductor devices are connected to each other using the semiconductor device according to the seventh embodiment.

  First, the configuration of the semiconductor device according to the seventh embodiment will be described. Sf is a semiconductor device having a stick shape, a circular cross section, and a shape extending in the central axis direction. Reference numeral 11 denotes a substrate of the semiconductor device Sf, and an integrated circuit 12 is formed on the substrate 11. That is, the integrated circuit 12 is formed on the side surface of the semiconductor device Sf in the seventh embodiment. Reference numeral 10 denotes an electrode of the integrated circuit 12, which is formed on the end face m3 of the semiconductor device Sf.

  As shown in FIG. 11, the semiconductor device Sf according to the seventh embodiment configured as described above is installed in the middle of the transmission line 14 that is an electric wire or the like that connects the planar semiconductor devices 13 together. The transmission line 14 is connected to the electrode 15 of each semiconductor device 13.

  Next, the operation of the semiconductor device Sf according to the seventh embodiment will be described. The semiconductor device Sf is a device in which a circuit is formed on a single crystal of Si or GaAs by a semiconductor device process. Conventionally, a semiconductor device that has been planar is formed into a stick shape. The semiconductor device Sf has the same shape and size as the transmission line 14 and is connected to the electrode 15 of the conventional planar semiconductor device 13 via the transmission line 14. The transmission line 14 transmits an electrical signal as it is, but the semiconductor device Sf in the seventh embodiment itself has an integrated circuit 12 and has a function of controlling the signal. The signal can be converted and transmitted. The semiconductor device Sf shown in FIG. 10 has three electrodes 10 on the end face m3. However, the number of electrodes may be any number, and one electrode is connected as shown in FIG. In this case, one electrode may be provided on one end face m3 of the semiconductor device Sf. Further, the semiconductor device Sf can be used not only for connecting the semiconductor devices 13 as shown in FIG. 10 but also for connecting other electrical circuits, and the shape is the same as the transmission line 14 which is an electric wire or the like. Since it is stick-shaped, it can be used in the same way as the transmission line 14 and is easy to use.

  As described above, according to the semiconductor device in the seventh embodiment, the integrated circuit is formed on the side surface of the substrate having a circular cross section and extending in the central axis direction. Unlike the transmission line, it can be used not only for transmitting signals but also for controlling.

  Furthermore, since the semiconductor device according to the seventh embodiment has the same shape as the transmission line, it can be used in the same manner as the transmission line and can be easily connected and used.

In the seventh embodiment, the stick-like semiconductor integrated Sf in which the integrated circuit is formed on silicon or the like on the substrate has been described. However, the microwave integrated circuit is formed on a dielectric such as ceramic on the substrate. By doing so, it can be used as a stick-shaped microwave device. Hereinafter, this microwave device will be described in a modification of the seventh embodiment.
(Modification of Embodiment 7)
Hereinafter, a microwave device according to a modification of the seventh embodiment will be described with reference to FIG. FIG. 18 is a diagram illustrating a configuration of a microwave device according to a modification of the seventh embodiment. In the figure, Df is a microwave device having a stick shape, a circular cross section, and a shape extending in the central axis direction. Reference numeral 19 denotes a substrate of the microwave device Df, and a microwave integrated circuit 20 is formed on the substrate 19. That is, the microwave integrated circuit 20 is formed on the side surface of the microwave device Df according to the modification of the seventh embodiment. The microwave integrated circuit 20 is formed by, for example, printing a desired pattern on a ceramic or the like with a photograph and cutting or melting the pattern.

  Moreover, since the counter electrode is necessary for the microwave device Df, for example, as shown in FIG. 18A, a metal rod is provided as the counter electrode 21 on the central axis of the microwave device Df like a coaxial cable. As shown in FIG. 18B, the counter electrode may be provided on the microwave device Df by providing the counter electrode 21 in an arbitrary region on the side surface of the microwave integrated circuit 20. When the counter electrode 21 is provided in the side surface region as shown in FIG. 18B, the microwave integrated circuit 20 is formed in a region other than the region used for the counter electrode 21.

  Then, the microwave device Df configured as described above is installed in the middle of the transmission line 14 such as a coaxial cable or a feeder line connecting the planar semiconductor devices 13 instead of the semiconductor device Sf shown in FIG. To do.

  Next, the operation of the microwave device Df according to the modification of the seventh embodiment will be described. For example, when the microwave device Df includes the microwave integrated circuit 20 having a branch circuit as shown in FIG. 18A, when the light beam input to the microwave device Df is output, four light beams are output. Branch to and output. As described above, the microwave device Df includes the microwave integrated circuit 20 and has a function of controlling a signal. Therefore, the microwave device Df not only transmits a signal as it is like the transmission line 14 such as a coaxial cable but also a signal. Can be converted and transmitted. Note that the microwave device Df shown in FIG. 18A has four electrodes on its end face, but this number may be any number and depends on the pattern of the microwave integrated circuit 20. Further, in the case of connection as shown in FIG. 11, one electrode is sufficient. Further, since the microwave device Df has a stick shape, it can be used in the same manner as the transmission line 14 and is easy to use.

Thus, in the microwave device Df according to the modification of the seventh embodiment, not only the input radio wave is transmitted like a transmission line such as a coaxial cable, but also the semiconductor device Sf described above. Further, since it has the same shape as the transmission line, it can be used in the same manner and can be easily connected and used.
(Embodiment 8)
An optoelectronic integrated device according to the eighth embodiment will be described with reference to the drawings. FIG. 12 is a diagram illustrating a configuration of a circuit in which the semiconductor device Sf according to the seventh embodiment is combined with an optical fiber. FIG. 13 is a diagram illustrating a state in which the semiconductor device Sf according to the seventh embodiment is stacked in the buoy groove of the substrate.

  First, the configuration of the optoelectronic integrated device according to the eighth embodiment will be described. The optoelectronic integrated device according to the eighth embodiment uses the semiconductor device Sf according to the seventh embodiment. As shown in FIG. 10, the semiconductor device Sf has a circular cross section and extends in the central axis direction. And has a stick shape. This is the same diameter and shape as the optical fiber. As described above, the integrated circuit 12 is formed on the side surface of the semiconductor device Sf, and the electrode 10 is formed on the end surface m3. Of is an optical fiber.

  As shown in FIG. 12, a surface emitting laser diode 16 is installed on the end face m3 of the semiconductor device Sf. An electric signal is input to the laser diode by the electrode 10. Further, the optical fiber Of is installed so that the end face comes to face the end face m3. The central axis of the semiconductor device Sf and the central axis of the optical fiber Of are the same.

  Next, the operation of the optoelectronic integrated device according to the eighth embodiment will be described. In the state shown in FIG. 12, the light beam emitted from the surface emitting laser diode 16 in response to the electrical signal from the semiconductor device Sf is incident on the core of the optical fiber Of and propagates through the optical fiber Of. In addition, a light receiving element may be installed on the end face m3 of the semiconductor device Sf instead of the laser diode 16. In this case, the light receiving element converts the light beam emitted from the optical fiber Of into an electrical signal, The signal is controlled by the integrated circuit 12 and sent to an electrode (not shown) installed on the end surface opposite to the light receiving element. An integrated device can be created by installing and fixing the semiconductor element Sf and the optical fiber Of as described above on a substrate having buoy grooves and pins. Also, each semiconductor device Sf is created to have different functions, for example, one as a memory, one as an LD driver, and one as an MPU, and the three semiconductor devices Sf are illustrated in FIG. As shown in FIG. 13, if the semiconductor devices Sf are stacked and arranged on the substrate 18 having the buoy grooves 17 so that the electrodes 10 of the respective semiconductor devices Sf are in contact with each other, the respective semiconductor devices Sf are combined to work. Can do. Further, by adding the semiconductor device Sf to the optoelectronic integrated device shown in the first to sixth embodiments, an optoelectronic integrated device that can easily realize more complicated control can be created.

  Further, even if the microwave device Df described in the modification of the seventh embodiment is replaced with the semiconductor device Sf described above, the same effect as described above can be obtained. Furthermore, if the semiconductor device Sf and the microwave device Df are used in combination, an optoelectronic integrated device capable of easily realizing more complicated control can be created.

  As described above, according to the optoelectronic integrated device of the eighth embodiment, the light emitting portion is provided on the end face of the stick-shaped semiconductor device or the microwave device so that the light beam from the light emitting portion enters the optical fiber. Therefore, there is an effect that it is integrated and light can be easily controlled.

  In addition, when the semiconductor device or the microwave device is stacked, the electrodes are formed at the portions where they are in contact with each other. Therefore, there is no need to connect the electrodes with a transmission line, and it can be easily formed.

INDUSTRIAL APPLICABILITY The microwave device and the optoelectronic integrated device of the present invention are useful as a microwave device that can easily control light, has good response characteristics and can be miniaturized, and an optoelectronic integrated device including the microwave device. .

Ax1 Central axis of the first optical fiber Ax2 Central axis of the second optical fiber Ax3 Orthogonal axis of both optical fibers Ax4 Central axis of the inclined end face of the first optical fiber Ax5 Central axis of the inclined end face of the second optical fiber Ax6 No. 1 optical fiber orthogonal axis Ax7 central axis of third optical fiber Ax8 central axis of shape memory alloy Ax9 central axis of fourth optical fiber Ax10 central axis of first shape memory alloy Ax11 center of second shape memory alloy Ax12 Center axis of the third shape memory alloy Ax13 Center axis of the fourth shape memory alloy ax1 Center line of the longitudinal section of the first shape memory alloy ax2 Center line of the longitudinal section of the second shape memory alloy Cp1 1st Center point of the inclined end face of the optical fiber Cp2 Center point of the inclined end face of the second optical fiber d Optical fiber spacing F1 Inclined end face of the first optical fiber F2 Second optical fiber Inclined end face F3 third inclined end face of the optical fiber Of1 first optical fiber Of2 second optical fiber Of3 third optical fiber Of4 fourth optical fiber Of Fiber Of ₁ first optical fiber group Of ₂ second Optical fiber group Of ₃ Third optical fiber group Of ₄ Fourth optical fiber group S Spacing between inclined end faces P1 to P3 Port Mf Shape memory alloy Mf1, Ms1 First shape memory alloy Mf2, Ms2 Second shape memory Alloy Mf3 Third shape memory alloy Mf4 Fourth shape memory alloy T1 First mirror T2 Second mirror m Inclined end surface of shape memory alloy m1 Inclined end surface m2 Inclined end surface m3 End surface k1 First inclined surface k2 Second Inclined surface k3 Third inclined surface k4 Fourth inclined surface 1 Core 2 Clad 3, 9 Metal mirror 4 First metal mirror 5 Second metal mirror 6 First light Long filter 7 Second optical wavelength filter 8 Optical wavelength filter 10, 15, 22 Electrode 11, 19 Substrate 12 Integrated circuit 13 Semiconductor device 14 Transmission line 16 Laser diode 17 Buoy groove 18 Substrate 20 Microwave integrated circuit 21 Counter electrode 101 Optical detection Sf Semiconductor device Df Microwave device

Claims (6)

The cross section is circular and has a shape extending in the central axis direction,
A desired microwave circuit is formed on the side surface,
A counter electrode is formed in the central axis or a part of the side surface,
A microwave device characterized by that. The microwave device according to claim 1, wherein
A light emitting part or a light receiving part is formed on the end face.
A microwave device characterized by that. The microwave device according to claim 1, wherein
When the microwave device main body is laminated on a substrate having buoy grooves or pins,
An electrode is formed at a place where each of the microwave device main bodies is in contact with each other, and signals are input and output between the microwave device main bodies.
A microwave device characterized by that. A microwave device according to claim 1 or 2,
A single or a plurality of shape memory alloys having a circular cross section and a shape extending in the direction of its central axis, and expanding and contracting due to a change in temperature;
It is made of a material that can transmit light, and its cross section is circular and has a shape extending in the direction of its central axis. A single or a plurality of optical waveguide members made different from each other,
On the substrate provided with buoy grooves or pins, the microwave device, the shape memory alloy, and the optical waveguide member are arranged and integrated,
A light beam is controlled by a combination of the microwave device, the shape memory alloy, and the optical waveguide member;
An optoelectronic integrated device. The optoelectronic integrated device according to claim 4.
The semiconductor device further includes a semiconductor device having a circular cross section and a shape extending in the central axis direction, a desired integrated circuit formed on the side surface, and an electrode formed on the end surface.
On the substrate provided with buoy grooves or pins, the microwave device, the shape memory alloy, the optical waveguide member, and the semiconductor device are arranged and integrated,
A light beam is controlled by a combination of the microwave device, the shape memory alloy, the optical waveguide member, and the semiconductor device;
An optoelectronic integrated device. The optoelectronic integrated device according to claim 5.
The semiconductor device includes:
A light emitting part or a light receiving part is formed on the end face.
An optoelectronic integrated device.

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