JP2010244885A - Organic electroluminescent image display and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic EL image display in which brightness variations on a light-emitting panel is reduced and which includes a low-costed upper layer part auxiliary wiring structure, and a method of manufacturing the organic EL image display in which a manufacturing process is simplified. <P>SOLUTION: Each of a plurality of light-emitting pixels equipped by an organic electroluminescent image display 1 includes a light-emitting region in which light is emitted when current flows in a light-emitting layer 105 pinched by an anode 102 separately formed at each light-emitting pixel and a cathode 107 formed at all over the face over a plurality of light-emitting pixels, and includes a non-light-emitting region in which the cathode 107 is formed. A light-emitting panel includes an auxiliary wiring 110 formed at all over the face in contact with the cathode 107 and conducted to the cathode 107. The ratio of an area where the auxiliary wiring 110 covers the light-emitting region against an area of the light-emitting region is equal to the ratio of the area where the auxiliary wiring 110 covers the non-light-emitting region against the area of the non-light-emitting region. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an organic electroluminescence (EL) image display device and a manufacturing method thereof, and more particularly to an organic EL image display device in which luminance variation of a light emitting panel is reduced and a manufacturing method thereof.

  In recent years, display devices such as a simple matrix system and an active matrix system using organic electroluminescence elements (hereinafter referred to as organic EL elements) having self-luminous, wide viewing angle, and high-speed response have attracted attention. In particular, active matrix display devices that are advantageous for high definition and large screens are being actively developed.

  An image display device using an organic EL element includes an organic EL element and a plurality of light emitting pixels having a driving circuit for driving the organic EL element. The organic EL element has a first electrode made of Al or the like, a second electrode made of ITO or the like opposed thereto on a substrate such as glass, and an organic light emitting layer formed therebetween. The drive circuit is composed of thin film transistors (TFTs) that individually drive the organic EL elements. Accordingly, the organic EL image display device displays a desired image by applying a desired voltage to the organic EL element by the drive circuit and causing a current to flow.

  Further, as an organic EL image display device, a bottom emission method in which light emitted from an organic EL element is extracted to the outside through a substrate and a top emission method in which the light is emitted from the second electrode side facing the substrate are being studied. However, in an active matrix bottom emission type organic EL image display device, since a thin film transistor of a driving circuit is formed on a substrate, it is difficult to ensure a sufficient aperture ratio.

  On the other hand, since the aperture ratio is not limited by a thin film transistor or the like in the top emission method, the use efficiency of emitted light can be increased as compared with the bottom emission method. In this case, in the top emission method, since light is extracted to the outside through the second electrode formed on the top surface of the light emitting layer, the second electrode is required to have high conductivity and high light transmittance. As the second electrode that satisfies this required specification, an extremely thin metal electrode of about 10 nm or a metal oxide electrode of about 100 nm is used.

  However, the second electrode has a high resistivity. Therefore, as the area of the light emitting panel is increased, the wiring length of the second electrode is different between the light emitting pixels, and a large voltage drop is generated between the end of the power supply unit and the center of the panel, and the luminance is accordingly increased. Because there is a difference, the center becomes dark. That is, there is a problem in that the voltage varies depending on the arrangement position of the organic EL elements on the light emitting panel surface, and the display quality is degraded.

  In order to solve the above problem, the following structure of an image display device has been proposed.

  FIG. 9 is a structural cross-sectional view of a light emitting pixel included in a conventional organic EL image display device described in Patent Document 1. As shown in the figure, in the organic EL image display device 800, the first electrode 820 and the auxiliary wiring 830 made of a conductive material having a low resistivity are formed on the surface of the substrate 810 by, for example, photolithography. Used separately. A light modulation layer 850 which is a light emitting layer is provided on the first electrode 820, and a second electrode 860 made of a transparent conductive material is provided thereon. Further, the auxiliary wiring 830 and the second electrode 860 are connected to each other through an opening 845 partially provided in the partition wall 840. As a result, the wiring resistance due to the second electrode 860 can be reduced, and luminance variations in the display surface can be reduced.

  Further, Patent Document 2 provides a high-output-quality electro-optical device that reduces unevenness in display luminance and achieves high luminance and high contrast in an electro-optical device such as an organic EL device. The electro-optical device includes a pair of a first substrate and a second substrate. On the first substrate side, an electro-optical element, an electronic element, a power supply wiring, and a spacer are formed. On the other hand, auxiliary wiring for supplying power to at least one element as an auxiliary is formed on the second substrate side. By bonding the first substrate and the second substrate, a contact between the top electrode and the auxiliary wiring is made at the non-opening. Thereby, the resistance of the power supply wiring and the second electrode can be further reduced.

  Moreover, in patent document 3, the protective film is formed on the 2nd electrode used as an upper electrode, and the auxiliary electrode electrically connected with the 2nd electrode is formed on this protective film. Thereby, it is possible to provide an organic EL element in which a good contact between the second electrode and the auxiliary electrode is possible, and the voltage drop is suppressed and the image quality is maintained or improved.

JP 2002-318556 A JP 2006-201421 A Japanese Patent Laid-Open No. 2006-261058

  However, in the structure in which the auxiliary wiring is formed in the lower layer portion described in Patent Document 1, it is necessary that all of the wet film forming layer such as the organic light emitting layer is applied separately so that the organic light emitting layer and the insulating layer do not adhere to the opening 845. is there. For this reason, the entire film forming process cannot be used. Moreover, when there exists adhesion of an organic light emitting layer, an insulating layer, etc., the process removed separately is needed and it has the subject that a manufacturing process becomes complicated.

  Further, in the structure described in Patent Document 2, since it is necessary to make contact between the top electrode and the auxiliary wiring at the non-opening portion, when the first substrate and the second substrate are bonded, a high level at the light emitting pixel level is required. An accurate alignment process is required. In addition, in order to realize highly accurate alignment in this step, there is a problem that a small material such as thermal shrinkage must be used as a material for the second substrate.

  Further, in the structure in which the auxiliary wiring is formed in the upper layer portion described in Patent Document 3, it is necessary to form the auxiliary wiring after forming the organic light emitting layer or the transparent cathode layer. In this case, since the organic light emitting layer and the transparent cathode layer are damaged by the film forming process and the patterning process of the auxiliary wiring, there is a problem that the light emitting performance is deteriorated.

  The present invention has been made to solve the above-described problems, and reduces the luminance variation on the light-emitting panel and simplifies the manufacturing process and the organic EL image display device having a low-cost upper layer auxiliary wiring structure. It is an object of the present invention to provide a method for manufacturing an organic EL image display device.

  In order to achieve the above object, the present invention provides an organic electroluminescence image display device having a light emitting panel in which a plurality of light emitting pixels are two-dimensionally arranged, and each of the plurality of light emitting pixels includes the light emitting pixels. A light emitting region that emits light when an electric current flows through an organic light emitting layer sandwiched between a first electrode layer that is separately formed and a second electrode layer that is formed across the plurality of light emitting pixels, and the adjacent light emitting region And the non-light-emitting region in which the second electrode layer is formed. The light-emitting panel is electrically connected to the second electrode layer formed on the entire surface in contact with the second electrode layer. A light emitting region that has an auxiliary wiring and is a ratio of the area of the plurality of light emitting regions not covered by the auxiliary wiring to the sum of the areas of the plurality of light emitting regions corresponding to the plurality of adjacent light emitting pixels The aperture ratio is the ratio of the area of the plurality of non-light-emitting regions not covered by the auxiliary wiring to the sum of the areas of the plurality of non-light-emitting regions corresponding to the plurality of adjacent light-emitting pixels. It is equal to.

  With this configuration, since the second electrode layer and the auxiliary wiring are electrically connected, it is possible to reduce the luminance variation on the light-emitting panel due to the wiring resistance. Moreover, since the light emitting area aperture ratio and the non-light emitting area aperture ratio for a plurality of adjacent light emitting pixels are equal, it is not necessary to separately form the auxiliary wiring pattern in the light emitting area and the non-light emitting area. Therefore, it is not necessary to align the auxiliary wiring formed on the second electrode layer with high accuracy at the light emitting pixel level, and the manufacturing process can be simplified. Furthermore, since high-precision alignment is not required in the formation of the auxiliary wiring, it is necessary to limit the use of a glass substrate with a small thermal expansion coefficient that suppresses positional deviation in the surface direction due to thermal shrinkage as a substrate for the auxiliary wiring. Absent. Therefore, for example, a low-cost material such as a resin substrate can be used. For example, a low-cost and flexible film substrate can be used as the substrate for auxiliary wiring.

  In each of the plurality of light emitting pixels, the area where the auxiliary wiring covers the light emitting region is preferably 50% or less of the area of the light emitting region.

  Thereby, since the light emission amount required when the light emitted from the organic light emitting layer passes through the second electrode layer and the auxiliary wiring and is emitted to the outside is secured, it is possible to avoid the deterioration of the light emitting performance.

  The line width of the auxiliary wiring may be wider at the center of the light-emitting panel than at the periphery of the light-emitting panel.

  When the auxiliary wiring is not arranged, the voltage drop of the second electrode layer varies depending on the position on the light emitting panel. For example, when the second electrode layer is connected to the power supply on the outer periphery of the light emitting panel, the voltage drop of the second electrode layer is larger in the central portion than in the peripheral portion of the light emitting panel. On the other hand, by adopting this structure, the auxiliary wiring itself has a wiring resistance that is lower in the central portion where the line width is wider than in the peripheral portion. The auxiliary wiring having such an inclination of the wiring resistance and the second electrode layer having the above-described voltage drop characteristic are connected at each of the peripheral part and the central part, so that the voltage drop of the second electrode layer can be reduced. It is possible to make it uniform regardless of the location. Thereby, it is possible to further reduce the luminance variation on the light emitting panel due to the wiring resistance.

  In each of the plurality of light emitting pixels, the wiring pattern of the auxiliary wiring on the light emitting region may be the same as the wiring pattern of the auxiliary wiring on the non-light emitting region.

  Thereby, it is not necessary to align the auxiliary wiring formed on the second electrode layer with high accuracy at the light emitting pixel level, and the manufacturing process can be simplified. In addition, since transparency can be ensured even in the non-light emitting region, for example, a high-contrast or see-through light-emitting panel can be realized by the transparency of the pixel regulation layer (partition wall) constituting the non-light emitting region.

  The wiring pattern of the auxiliary wiring may be a grid-like wiring pattern.

  Thereby, since the second electrode layer and the auxiliary wiring are uniformly connected on the light emitting panel, it is possible to reduce the luminance variation on the light emitting panel due to the wiring resistance. Moreover, it becomes possible to ensure the opening part of a light emission area | region appropriately.

  The grid-like wiring pattern is preferably inclined in the plane with respect to the direction of the pixel column.

  As a result, it is possible to suppress moire (interference fringes) caused by interference between the plurality of light emitting pixels arranged in a matrix and the wiring pattern of the auxiliary wiring.

  The first electrode layer, the organic light emitting layer, and the second electrode layer are formed in this order on the first main surface of the first substrate, and the auxiliary wiring is different from the first substrate. Formed on a first main surface of a second substrate made of resin, the first main surface of the first substrate and the first main surface of the second substrate are the first substrate and the second substrate; It is preferable to face each other with a resin film layer for adhering them together.

  Thereby, since the first electrode, the organic light emitting layer and the second electrode layer, and the auxiliary wiring are formed on different substrates, the organic light emitting layer and the second electrode layer are formed by a film forming process and a patterning process of the auxiliary wiring. Will not be damaged. Further, since the substrate on which the auxiliary wiring is formed is made of resin, it is possible to reduce the cost.

  The resin film layer may be conductive.

  As a result, even if the auxiliary wiring and the second electrode layer are not in direct contact, the auxiliary wiring and the second electrode layer can be made conductive by interposing the conductive resin film layer therebetween. It becomes possible.

  The resin film layer may be made of a resin film in which conductive fine particles are dispersed.

  The resin film in which conductive fine particles are dispersed exhibits conductivity when the pressurized portion is in a high density state of the fine particles. By pressurizing the resin film with the second electrode layer and the auxiliary wiring, the pressed portion exhibits conductivity, and the first substrate on which the second electrode layer is formed and the auxiliary wiring are formed. Two substrates are joined.

  The second main surface of the second substrate is preferably coated with a film containing silicon nitride or silicon oxide.

  Thereby, since the sealing property of the area | region containing the organic light emitting layer formed between the 1st board | substrate and the 2nd board | substrate is ensured, it becomes possible to suppress the characteristic deterioration of each light emitting pixel.

  In addition, the present invention can be realized not only as an organic EL image display device including such characteristic means, but also as an organic EL image display device including the characteristic means included in the organic EL image display device as a step. It can be realized as a manufacturing method.

  According to the present invention, since it has a low-cost upper-layer auxiliary wiring structure that does not require alignment at the light-emitting pixel level, the luminance variation on the light-emitting panel is reduced, and the manufacturing process is simplified. An image display device and a method for producing an organic EL image display device excellent in productivity can be provided.

(A) is a perspective view of each component which the organic EL image display apparatus which concerns on Embodiment 1 of this invention has. (B) is a figure showing the auxiliary | assistant wiring pattern of the organic electroluminescent image display apparatus which concerns on Embodiment 1 of this invention. (C) is an example of a structural cross-sectional view of the organic EL image display device according to Embodiment 1 of the present invention. It is a figure showing the auxiliary | assistant wiring pattern of the organic electroluminescent image display apparatus which shows the modification based on Embodiment 1 of this invention. It is a circuit block diagram of the light emission pixel which an organic electroluminescent image display apparatus has. It is a figure which shows that the electric potential of a transparent cathode changes with the position of a light emission panel. (A) is a figure showing the auxiliary | assistant wiring pattern in the center part of the light emission panel of the organic electroluminescent image display apparatus which concerns on Embodiment 2 of this invention. (B) is a figure showing the auxiliary wiring pattern in the peripheral part of the light emission panel of the organic electroluminescent image display apparatus concerning Embodiment 2 of this invention. It is process sectional drawing explaining the manufacturing method of the organic electroluminescent image display apparatus which concerns on embodiment of this invention. It is process sectional drawing explaining the manufacturing method of the organic electroluminescent image display apparatus which concerns on embodiment of this invention. 1 is an external view of a thin flat TV incorporating an organic EL image display device of the present invention. It is a structure sectional view of the luminescence pixel which the conventional image display device indicated in patent documents 1 has.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments and drawings, the same components will be described with the same reference numerals. In the following, a display device including an organic EL element in which a top emission type anode (anode) is a first electrode and a cathode (cathode) is a second electrode will be described as an example, but the present invention is not limited thereto.

(Embodiment 1)
The organic electroluminescence image display device (hereinafter referred to as an organic EL image display device) in Embodiment 1 of the present invention includes a plurality of light emitting pixels arranged two-dimensionally, and is formed separately for each light emitting pixel. A light emitting region that emits light when an electric current flows through an organic light emitting layer sandwiched between one electrode layer and the second electrode layer formed over the entire surface of the plurality of light emitting pixels, and a non-light emitting region on which the second electrode layer is formed, For each light emitting pixel, the auxiliary wiring connected to the second electrode layer, and the area where the auxiliary wiring does not cover the plurality of light emitting areas with respect to the sum of the areas of the plurality of light emitting areas corresponding to the plurality of adjacent light emitting pixels. The ratio of the light emitting region aperture ratio is the ratio of the area where the auxiliary wiring does not cover the plurality of non-light emitting regions to the area sum of the plurality of non light emitting regions corresponding to the plurality of adjacent light emitting pixels. Equal frequency aperture ratio. Thereby, it is possible to reduce luminance variations on the light-emitting panel. In addition, it is not necessary to distinguish and form auxiliary wiring patterns in the light emitting region and the non-light emitting region. Therefore, it is not necessary to align the auxiliary wiring with high accuracy at the light emitting pixel level, and the manufacturing process can be simplified.

  Hereinafter, an organic EL image display device according to Embodiment 1 of the present invention will be described with reference to the drawings.

  FIG. 1A is a perspective view of each component included in the organic EL image display device according to Embodiment 1 of the present invention. FIG. 2 is a diagram in which the organic EL element unit 1A, the auxiliary wiring unit 1B, and the organic EL light control unit 1C, which are components of the organic EL image display device 1, are separated.

  In the organic EL element section 1A, a plurality of light emitting pixels 10R, 10G, and 10B are two-dimensionally arranged, and each of the light emitting pixels 10R, 10G, and 10B functions as a red, green, and blue sub-pixel. On 101, an anode 102, a partition wall 103, a hole transport layer 104, a light emitting layer 105, an electron transport layer 106 and a cathode 107 are provided.

  The auxiliary wiring portion 1B includes an auxiliary wiring sheet 111A and an auxiliary wiring 110.

  The organic EL light control unit 1 </ b> C includes an upper substrate 108, color filters 109 </ b> R, 109 </ b> G, and 109 </ b> B, and a spacer 112.

  The substrate 101 is a first substrate. Although it does not specifically limit as the board | substrate 101, For example, a glass substrate, a quartz substrate, etc. are used. In addition, bendability can be imparted to the organic EL display device using a plastic substrate such as polyethylene terephthalate or polyethersulfone. In particular, as in this embodiment, in the case of the top emission method, an opaque plastic substrate or a ceramic substrate can be used.

  The anode 102 is a first electrode layer that is separately formed on the substrate 101 for each light emitting pixel, and is separately provided corresponding to each light emitting pixel. The anode 102 is preferably made of a material having a low electrical resistivity. For example, silver, aluminum, nickel, chromium, molybdenum, copper, iron, platinum, tungsten, lead, tin, antimony, strontium, titanium, manganese, indium, for example. , Zinc, vanadium, tantalum, niobium, lanthanum, cerium, neodymium, samarium, europium, palladium, copper, cobalt, an alloy of these metals, or a laminate thereof can be used.

  The partition wall 103 is formed on the substrate 101 and the anode 102, has a function of regulating the formation region of the hole transport layer 104, the light emitting layer 105, and the electron transport layer 106 and separating the light emitting region for each light emitting pixel. A resin material such as a resin is used. At this time, in order to prevent light generated in the light emitting layer 105 from being transmitted to the adjacent light emitting layer, for example, carbon particles may be included in the resin.

  The hole transport layer 104 is formed on the anode 102 and between the partition walls 103, and has a function of transporting holes injected from the anode 102 into the light emitting layer 105. As the hole transport layer 104, a hole transporting organic material can be used. The hole transporting organic material is an organic substance having a property of transferring generated holes by intermolecular charge transfer reaction. This is sometimes called a p-type organic semiconductor.

  The hole transport layer 104 may be a high molecular material or a low molecular material, but it is preferable that the hole transport layer 104 can be formed by a wet printing method, and when the light emitting layer 105 as an upper layer is formed, the hole transport layer 104 is not easily eluted. It is preferable to include a crosslinking agent. An example of the hole transporting material is not particularly limited, but an aromatic amine can be used, and a triphenylamine derivative and a triarylamine derivative are preferably used. As an example of the crosslinking agent, dipentaerythritol hexaacrylate or the like can be used.

  A film forming method for forming the hole transport layer 104 is not particularly limited, and a nozzle jet method represented by an ink jet method and a dispenser method can be used. In this case, the ink jet method is a method in which the hole transport layer 104 is formed by ejecting an ink-formed organic film forming material from a nozzle.

The light emitting layer 105 is surrounded by the hole transport layer 104, the electron transport layer 106, and the partition wall 103, and emits light generated by recombination of electrons and holes injected into the light emitting layer 105 from the surface of the cathode 107. The light-emitting layer 105 can be formed using a low-molecular or high-molecular organic light-emitting material. As the polymer light-emitting material, for example, a polymer light-emitting material such as polyparaphenylene vinylene (PPV) or polyfluorene can be used. Moreover, as a low molecular weight light emitting material, in addition to Alq ₃ and Be-benzoquinolinol (BeBq ₂ ), 2,5-bis (5,7-di-t-pentyl-2-benzoxazolyl)- 1,3,4-thiadiazole, 4,4'-bis (5,7-benzyl-2-benzoxazolyl) stilbene, 4,4'-bis [5,7-di- (2-methyl-2- Butyl) -2-benzoxazolyl] stilbene, 2,5-bis (5,7-di-t-benzyl-2-benzoxazolyl) thiophine, 2,5-bis ([5-α, α- Dimethylbenzyl] -2-benzoxazolyl) thiophene, 2,5-bis [5,7-di- (2-methyl-2-butyl) -2-benzoxazolyl] -3,4-diphenylthiophene, 2,5-bis (5-methyl-2-benzoxazolyl) thio 4,4'-bis (2-benzoxazolyl) biphenyl, 5-methyl-2- [2- [4- (5-methyl-2-benzoxazolyl) phenyl] vinyl] benzoxazo Benzoxazoles such as ril, 2- [2- (4-chlorophenyl) vinyl] naphtho [1,2-d] oxazole, benzothiazoles such as 2,2 ′-(p-phenylenedivinylene) -bisbenzothiazole , 2- [2- [4- (2-benzimidazolyl) phenyl] vinyl] benzimidazole, 2- [2- (4-carboxyphenyl) vinyl] benzimidazole, and other fluorescent whitening agents such as Tris, (8-quinolinol) aluminum, bis (8-quinolinol) magnesium, bis (benzo [f] -8-quinolinol) zinc, bis 2-methyl-8-quinolinolate) aluminum oxide, tris (8-quinolinol) indium, tris (5-methyl-8-quinolinol) aluminum, 8-quinolinol lithium, tris (5-chloro-8-quinolinol) gallium, bis ( Metal-chelating oxinoid compounds such as 8-hydroxyquinoline-based metal complexes such as 5-chloro-8-quinolinol) calcium and poly [zinc-bis (8-hydroxy-5-quinolinonyl) methane] and dilithium ependridione 1,4-bis (2-methylstyryl) benzene, 1,4- (3-methylstyryl) benzene, 1,4-bis (4-methylstyryl) benzene, distyrylbenzene, 1,4-bis (2 -Ethylstyryl) benzene, 1,4-bis (3-ethylstyryl) ben , Styrylbenzene compounds such as 1,4-bis (2-methylstyryl) 2-methylbenzene, 2,5-bis (4-methylstyryl) pyrazine, 2,5-bis (4-ethylstyryl) pyrazine 2,5-bis [2- (1-naphthyl) vinyl] pyrazine, 2,5-bis (4-methoxystyryl) pyrazine, 2,5-bis [2- (4-biphenyl) vinyl] pyrazine, 2, Distylpyrazine derivatives such as 5-bis [2- (1-pyrenyl) vinyl] pyrazine, naphthalimide derivatives, perylene derivatives, oxadiazole derivatives, aldazine derivatives, cyclopentadiene derivatives, styrylamine derivatives, Coumarin derivatives and aromatic dimethylidin derivatives are used. Furthermore, anthracene, salicylate, pyrene, coronene and the like are also used. Alternatively, a phosphorescent material such as fac-tris (2-phenylpyridine) iridium can be used.

  The electron transport layer 106 is formed on the light emitting layer 105 and between the partition walls 103, and is a layer mainly composed of an electron transport material. The material having an electron transporting property has both the property of having an electron accepting property and easily becoming an anion, and the property of transmitting generated electrons by a charge transfer reaction between molecules, and is used for charge transport from the cathode 107 to the light emitting layer 105. It is a material that has appropriateness to it. Examples of the electron transport layer 106 include oxadiazole derivatives such as 1,3-bis (4-tert-butylphenyl-1,3,4-oxadiazolyl) phenylene (OXD-7), anthraquinodimethane derivatives, and diphenyl. Polymer materials such as quinone derivatives and silole derivatives, bis (2-methyl-8-quinolinolate)-(para-phenylphenolate) aluminum (BAlq), bathopproin (BCP), and the like are used. At this time, for example, an alkali metal such as lithium, sodium, calcium, rubidium, cesium, and francci and a metal layer mainly composed of at least one of magnesium, calcium, strontium, barium, and radium alkaline earth metal are laminated. After that, the electron transport layer 106 may be formed. In addition, the metal layer may contain two or more kinds of alkali metals and alkaline earth metals.

  The cathode 107 is a second electrode layer that is formed so as to cover the electron transport layer 106 and the partition wall 103 and is formed over the entire surface of all the light emitting pixels, and is a transparent electrode that is continuously provided in each light emitting pixel. The cathode 107 is not particularly limited, but in the case of a top emission method, it is preferable to use indium tin oxide or indium zinc oxide.

  The auxiliary wiring sheet 111A is a second substrate made of a thermoplastic resin, and is, for example, polyethylene having a melting point of 98 to 115 ° C. An auxiliary wiring 110 is formed on the first main surface of the auxiliary wiring sheet 111A.

  FIG. 1B is a diagram illustrating an auxiliary wiring pattern of the organic EL image display device according to Embodiment 1 of the present invention. The wiring pattern of the auxiliary wiring 110 shown in the figure is in a lattice shape, and the material is, for example, a metal whose main component is copper.

  The light emitting pixels 10R, 10G, and 10B each have a light emitting region and a non-light emitting region. The light emitting region is disposed in the center of each light emitting pixel, and includes the above-described anode 102, partition wall 103, hole transport layer 104, light emitting layer 105, electron transport layer 106, and cathode 107. On the other hand, the non-light emitting region is a region that is arranged around each light emitting pixel and includes the partition wall 103 and the cathode 107 described above.

  The auxiliary wiring 110 has no difference in wiring pattern between the light emitting area and the non-light emitting area. That is, the ratio of the area of the light emitting region covered by the auxiliary wiring 110 to the area of the light emitting region is equal to the ratio of the area of the light emitting region covered by the auxiliary wiring 110 to the area of the non-light emitting region.

  In each of the light emitting pixels 10R, 10G, and 10B, the area of the light emitting region covered by the auxiliary wiring 110 is preferably 50% or less of the area of the light emitting region. More preferably, the area of the light emitting region covered by the auxiliary wiring 110 is 20% or less of the area of the light emitting region.

  Thereby, the light emission amount required when the light emitted from the light emitting layer 105 passes through the cathode 107 and the auxiliary wiring 110 and is emitted to the outside is ensured.

  Regarding the shape of the wiring pattern of the auxiliary wiring 110, the size of the light emitting pixels 10R, 10G, and 10B is 100 μm × 300 μm, respectively. For example, the line width is 10 μm, the height is 5 μm, and the pitch is 200 μm. .

  As described in FIG. 1A, the auxiliary wiring 110 formed on the first main surface by bonding the cathode 107 and the first main surface of the auxiliary wiring sheet 111 </ b> A to face each other, It contacts the cathode 107 on the partition wall 103. As a result, the auxiliary wiring 110 and the cathode 107 are uniformly conducted over a light emitting panel in which a plurality of light emitting pixels are two-dimensionally arranged.

  With the above-described wiring pattern shape of the auxiliary wiring 110 and the above configuration, the alignment of the auxiliary wiring 110 formed on the cathode 107 does not need to be performed with high accuracy at the light emitting pixel level, and the manufacturing process can be simplified. It becomes. Furthermore, since high-precision alignment is not required in forming the auxiliary wiring 110, a glass substrate with a small thermal expansion coefficient that suppresses positional deviation in the surface direction due to thermal shrinkage or the like is used as a substrate for forming the auxiliary wiring 110. There is no need to do. Therefore, as in the present embodiment, it is possible to use a low-cost material such as the auxiliary wiring sheet 111A made of resin. The auxiliary wiring sheet 111A can also be curved.

  In addition, since transparency can be ensured even in the non-light emitting region, for example, a high-contrast or see-through light-emitting panel can be realized by the transparency of the partition wall 103 constituting the non-light emitting region.

  Further, since the anode 102, the light emitting layer 105 and the cathode 107, and the auxiliary wiring 110 are formed on different substrates, the light emitting layer 105 and the cathode 107 are damaged by the film forming process and the patterning process of the auxiliary wiring 110. There is nothing.

  The auxiliary wiring sheet 111A is preferably conductive. As a result, even if the auxiliary wiring 110 and the cathode 107 are not in direct contact with each other, the auxiliary wiring 110 and the cathode 107 can be electrically connected because the conductive resin film layer is interposed therebetween. Become.

  Furthermore, the auxiliary wiring sheet 111A is preferably a resin film in which conductive fine particles are dispersed. The resin film in which conductive fine particles are dispersed exhibits conductivity when the pressurized portion is in a high density state of the fine particles. By pressurizing the resin film sandwiched between the cathode 107 and the auxiliary wiring 110, the pressed portion exhibits conductivity, and the substrate 101 on which the cathode 107 is formed and the auxiliary wiring 110 is formed. The wiring sheet 111A is joined.

  The grid-like auxiliary wiring pattern is preferably inclined in the plane with respect to the direction of the pixel column, like the auxiliary wiring pattern described in FIG. As a result, it is possible to suppress moire (interference fringes) caused by interference between the plurality of light emitting pixels arranged in a matrix and the wiring pattern of the auxiliary wiring.

  The grid-like auxiliary wiring pattern may not be inclined in the plane with respect to the direction of the pixel column.

  FIG. 2 is a diagram showing an auxiliary wiring pattern of the organic EL image display device showing a modification according to Embodiment 1 of the present invention. The auxiliary wiring pattern of the auxiliary wiring 120 shown in the figure has a lattice shape, but is not inclined in the plane with respect to the direction of the pixel column. Even with such a wiring pattern, for example, the moire described above can be avoided by appropriately setting the wiring pitch.

  The auxiliary wirings 110 and 120 and the cathode 107 do not need to be in contact with each light emitting pixel, and may be configured to be in contact with each of a plurality of light emitting pixels. Further, the pitch and shape of the auxiliary wiring 110 can be determined in accordance with the size of the light-emitting panel and the number of pixels.

  The upper substrate 108 is a third substrate that protects the light emitting surface of the light emitting panel, and is, for example, transparent alkali-free glass having a thickness of 0.5 mm.

  The color filters 109R, 109G, and 109B are formed on the first main surface of the upper substrate 108 so as to cover the light emitting regions of the light emitting pixels 10R, 10G, and 10B, respectively, and perform red, green, and blue color adjustment. It has a function.

  The spacer 112 is formed on the first main surface of the upper substrate 108 so as to be disposed on the partition wall 103, and has a function of bringing the auxiliary wiring 110 disposed below the partition wall 103 into contact with the partition wall 103 under pressure. Have. The spacer 112 is made of, for example, transparent plastic or acrylic and has a height of 10 μm.

  FIG. 1C is an example of a structural cross-sectional view of the organic EL image display device according to Embodiment 1 of the present invention. The organic EL image display device 1 shown in FIG. 1 includes an organic EL element portion 1A, an auxiliary wiring portion 1B, and an organic EL dimming device that are components of the organic EL image display device 1 shown in FIG. The part 1C is actually integrally formed. In the organic EL image display device 1 shown in FIG. 1C, the auxiliary wiring sheet 111A shown in FIG. 1A and a sealing resin 111B (not shown) applied on the auxiliary wiring sheet 111A. Are integrated by heat treatment to form a resin film layer 111. The sealing resin 111B will be described in the method for manufacturing the organic EL image display device.

  In addition, as described in FIG. 1C, in this embodiment, the auxiliary wiring 110 and the cathode 107 are bonded on the partition wall 103 by pressurization of the spacer 112.

  With this configuration, since the cathode 107 and the auxiliary wiring 110 are electrically connected at the light emitting pixel level, it is possible to reduce luminance variation on the light emitting panel due to wiring resistance. In addition, according to the wiring pattern of the auxiliary wiring 110 illustrated in FIG. 1B, the wiring pattern of the auxiliary wiring 110 on the light emitting region in each of the light emitting pixels 10R, 10G, and 10B is the auxiliary wiring 110 on the non-light emitting region. This is the same as the wiring pattern.

  Here, the relationship between the drive circuit of the light emitting pixels 10R, 10G, and 10B and the organic EL element unit 1A, the auxiliary wiring unit 1B, and the organic EL dimming unit 1C will be described.

  FIG. 3 is a circuit configuration diagram of a light emitting pixel included in the organic EL image display device. The light emitting pixel 10 shown in the figure includes a drive circuit unit 101A and a light emitting circuit unit 100A. The light emitting circuit unit 100A is an equivalent circuit of the organic EL element unit 1A, the auxiliary wiring unit 1B, and the organic EL dimming unit 1C illustrated in FIG. The drive circuit unit 101 </ b> A is a drive circuit formed inside the substrate 101.

  The drive circuit unit 101A includes a switching transistor Tr1 made of Nch-FET, a drive transistor Tr2 made of Pch-FET, and a storage capacitor C as drive elements. The drain electrode of Tr1 is connected to the data line, the gate electrode of Tr1 is connected to the scanning line, and the source electrode of Tr1 is connected to the storage capacitor C and the gate electrode of Tr2. The drain electrode of Tr2 is connected to the power source Vdd, and the source electrode of Tr2 is connected to the anode 102 of the light emitting circuit unit 100A. In this configuration, when a selection signal is input to the scanning line and Tr1 is opened, the data signal supplied via the data line is written to the holding capacitor C as a voltage value. Then, the holding voltage written in the holding capacitor C is held throughout one frame period, and by this holding voltage, the conductance of Tr2 changes in an analog manner, and a forward bias current corresponding to the light emission gradation is supplied to the anode 102. The Further, the forward bias current supplied to the anode 102 flows to the grounded auxiliary wiring 110 through the hole transport layer 104, the light emitting layer 105, the electron transport layer 106 and the cathode 107. Thereby, the light emitting layer 105 emits light according to the current and is displayed as an image.

  FIG. 4 is a diagram showing that the potential of the transparent cathode changes depending on the position of the light emitting panel. In the light-emitting panel shown in FIG. 4, a two-dimensional light-emitting pixel 10 is arranged, and a cathode 107 is formed over the entire surface thereof. Here, when the auxiliary wiring 110 is not formed on the light emitting panel, the ground potential of the cathode 107 exhibits a voltage drop characteristic as indicated by a broken line X. That is, the voltage drop of the cathode 107 connected to the ground potential at the outer peripheral portion of the light-emitting panel increases toward the center of the light-emitting panel. On the other hand, in the organic EL image display device according to Embodiment 1 of the present invention, the ground potential of the cathode 107 exhibits a voltage drop characteristic as shown by the solid line Y. That is, the auxiliary wiring 110 is formed over the entire surface of the cathode 107, and the cathode 107 is set to the ground potential throughout the light emitting panel, so that a voltage drop is suppressed. This is because the resistance R of the light emitting circuit unit 100A illustrated in FIG. 3 is small, and the resistance R does not differ depending on the position of each light emitting pixel.

  FIG. 3 is an example of the main circuit configuration of the organic EL image display device, and it goes without saying that other circuit configurations can be applied to the present invention as appropriate. For example, the same effect can be obtained even in a circuit configuration in which the anode 102 is connected to the drain electrode of the drive element.

(Embodiment 2)
FIG. 5A is a diagram showing an auxiliary wiring pattern in the central portion of the light emitting panel of the organic EL image display device according to Embodiment 2 of the present invention. FIG. 5B is a diagram showing an auxiliary wiring pattern in the periphery of the light emitting panel of the organic EL image display device according to Embodiment 2 of the present invention. The organic EL image display device 2 according to the second embodiment of the present invention differs from the organic EL image display device 1 according to the first embodiment only in the auxiliary wiring pattern. The description of the same points as in the first embodiment will be omitted, and only different points will be described below.

  The wiring patterns of the auxiliary wirings 110C and 110P described in FIGS. 5A and 5B are both in a lattice shape, and the material is, for example, a metal whose main component is copper. As for the shape of the wiring pattern, the size of the light emitting pixels 10R, 10G, and 10B is 100 μm × 300 μm, respectively. For example, the auxiliary wiring 110C has a line width of 15 μm, a height of 5 μm, and a pitch of 200 μm. The auxiliary wiring 110P has a line width of 5 μm, a height of 5 μm, and a pitch of 200 μm.

  That is, the auxiliary wiring 110C and the auxiliary wiring 110P differ only in line width, and the line width of the auxiliary wiring is wider at the central portion of the light emitting panel than at the peripheral portion of the light emitting panel. In addition, the line width of the auxiliary wiring between the central portion and the peripheral portion of the light emitting panel smoothly changes from, for example, 15 μm to 5 μm.

  As shown in FIG. 4, when the auxiliary wiring is not arranged on the light emitting panel, the voltage drop of the cathode 107 differs depending on the position on the light emitting panel, and is larger at the center of the light emitting panel. On the other hand, by adopting the wiring pattern as in the present embodiment, the auxiliary wiring itself has a wiring resistance that is smaller in the central portion where the line width is wider than in the peripheral portion. By connecting the auxiliary wiring having such an inclination of the wiring resistance and the cathode 107 having the above-described voltage drop characteristic in the entire light emitting panel, the voltage drop of the cathode 107 is made uniform regardless of the location of the light emitting panel. It becomes possible to make it. Thereby, it is possible to further reduce the luminance variation on the light-emitting panel due to the wiring resistance as compared with the organic EL image display device 1 according to the first embodiment.

  Note that the grid-like auxiliary wiring pattern is preferably inclined in the plane with respect to the direction of the pixel column, like the auxiliary wiring patterns described in FIGS. 5A and 5B. . As a result, it is possible to suppress moire (interference fringes) caused by interference between the plurality of light emitting pixels arranged in a matrix and the wiring pattern of the auxiliary wiring.

  In the first embodiment, in each of the light emitting pixels 10R, 10G, and 10B, the wiring pattern of the auxiliary wiring 110 on the light emitting region is the same as the wiring pattern of the auxiliary wiring 110 on the non-light emitting region. On the other hand, in the present embodiment, the line width of the wiring pattern varies depending on the position on the light-emitting panel. Therefore, in each of the light emitting pixels 10R, 10G, and 10B, the wiring pattern of the auxiliary wiring on the light emitting region is non-light emitting. The wiring pattern of the auxiliary wiring on the region may be strictly different.

  That is, in the present embodiment, the light emitting region aperture ratio, which is the ratio of the area of the plurality of light emitting regions not covered by the auxiliary wiring to the area sum of the plurality of light emitting regions corresponding to the plurality of adjacent light emitting pixels. Is equal to the non-light-emitting area aperture ratio, which is the ratio of the area of the plurality of non-light-emitting areas not covered by the auxiliary wiring to the area sum of the plurality of non-light-emitting areas corresponding to the plurality of adjacent light-emitting pixels.

  With this configuration, since the cathode 107 and the auxiliary wiring are electrically connected, it is possible to reduce luminance variation on the light-emitting panel due to wiring resistance. In addition, since the aperture ratio of the light emitting area and the aperture ratio of the non-light emitting area are equal, it is not necessary to separately form the auxiliary wiring pattern in the light emitting area and the non-light emitting area. Accordingly, it is not necessary to align the auxiliary wiring formed on the cathode 107 with high accuracy at the light emitting pixel level, and the manufacturing process can be simplified. Furthermore, since high-precision alignment is not required in the formation of the auxiliary wiring, it is necessary to limit the use of a glass substrate with a small thermal expansion coefficient that suppresses positional deviation in the surface direction due to thermal shrinkage as a substrate for the auxiliary wiring. Absent. Therefore, for example, a low-cost material such as a resin substrate can be used. For example, a low-cost and flexible film substrate can be used as the substrate for auxiliary wiring.

(Embodiment 3)
In the present embodiment, a method for manufacturing organic EL image display devices 1 and 2 according to Embodiments 1 and 2 will be described.

  6 and 7 are process cross-sectional views illustrating a method for manufacturing an organic EL image display device according to an embodiment of the present invention. 6 and 7 are process cross-sectional views illustrating a method of manufacturing the organic EL image display device 1 according to the first embodiment as a representative, but the organic EL image according to the second embodiment. The same applies to the manufacturing method of the display device 2.

  First, as shown in FIG. 6A, a metal thin film having a thickness of 100 nm made of molybdenum 97% and chromium 3% is formed on a substrate 101 which is a first substrate by sputtering. Then, the metal thin film is patterned into a predetermined anode shape through a photolithography method using a photosensitive resist, a patterning process by etching, and a peeling process of the photosensitive resist, thereby forming the anode 102 as the first electrode layer. As an etchant, a mixed solution of phosphoric acid, nitric acid, and acetic acid is used. Here, the substrate 101 is not particularly limited, but includes the drive circuit unit 101A. Therefore, a material in which a silicon semiconductor, metal oxide semiconductor, or organic semiconductor material is stacked on a glass substrate, a quartz substrate, or the like may be used. Further, as the outermost surface of the substrate 101, it is preferable to provide a planarization layer for the purpose of uniforming the unevenness of the transistor array layer.

  Next, as shown in FIG. 6B, photosensitive polyimide is formed as a partition wall 103 by spin coating, and patterned into a predetermined shape through a photosensitizing process and a developing process using a photomask. Thereby, a non-light emitting area and a light emitting area in each light emitting pixel are formed. Note that the shape of the light emitting region is, for example, 100 μm × 300 μm for each of the RGB pixels.

  Next, the substrate is cleaned using a neutral detergent and pure water.

  Next, as the surface treatment, UV-ozone treatment (170 nm ultraviolet light, 120 seconds) is performed.

  Next, as shown in FIG. 6C, as the hole transport layer 104, an ink-formed hole transporting organic film forming material is sprayed from the nozzle to the entire surface. Then, vacuum drying is performed at 50 ° C. for 10 minutes, and subsequently, a crosslinking reaction is performed by heat treatment at 210 ° C. for 30 minutes in a nitrogen atmosphere. As the hole transporting organic film forming material, for example, a mixture of HT12 manufactured by Summation and a xylene / mesitylene mixed solvent is used. Although the film thickness is slightly non-uniform depending on the position of the light emitting region, the film is formed so that the average film thickness is 20 nm.

  Next, a paste material that becomes the light emitting layer 105 is applied to the light emitting region by an ink jet method using, for example, an ink jet method. Then, vacuum drying is performed at 50 ° C. for 10 minutes, and subsequently, heat treatment is performed at 130 ° C. for 30 minutes in a nitrogen atmosphere. As the paste material, for example, a mixture of a green light emitting material Lumation Green manufactured by Summation and a mixed solvent of xylene / mesitylene is used. Although the film thickness slightly varies depending on the position of the light emitting region, it is formed so that the average film thickness becomes 70 nm. At this time, when the light-emitting layer 105 that is an organic light-emitting layer includes at least three different sub-pixels such as RGB, the formation process of the light-emitting layer 105 is repeated for each sub-pixel, so that Different light emitting layers 105 are formed.

  Next, as the electron transport layer 106, a compound Alq (manufactured by NS 99% or more of the film 20 nm is formed by co-evaporation.

  Next, as shown in FIG. 6D, an indium tin oxide (ITO) electrode having a thickness of 100 nm is formed on the electron transport layer 106 by, for example, a plasma-assisted vapor deposition method to form a cathode 107. The surface resistance of the formed cathode 107 is, for example, 80 Ωm.

  Here, apart from the above-described steps, a copper thin film having a thickness of 5 μm is formed by sputtering on the first main surface of the auxiliary wiring sheet 111A, which is a thermoplastic resin, as a second substrate different from the substrate 101. Form it. Thereafter, the copper thin film is processed into an auxiliary wiring 110 having a line width of 10 μm and a wiring pitch of 200 μm by using a general photolithography method of resist coating, exposure, development, copper etching, and resist peeling. The surface resistance of the formed auxiliary wiring 110 is, for example, 0.3 Ωm. The auxiliary wiring sheet 111A is, for example, polyethylene having a melting point of 98 to 115 ° C.

  Further, the auxiliary wiring sheet 111A may be conductive. As a result, even if the auxiliary wiring 110 and the cathode 107 are not in direct contact with each other, the auxiliary wiring 110 and the cathode 107 can be electrically connected because the conductive resin film layer is interposed therebetween. Become.

  Further, the auxiliary wiring sheet 111A may be a resin film in which conductive fine particles are dispersed. By pressurizing the resin film sandwiched between the cathode 107 and the auxiliary wiring 110, the pressed portion exhibits conductivity, and the substrate 101 on which the cathode 107 is formed and the auxiliary wiring 110 is formed. The wiring sheet 111A is joined.

  Next, as shown in FIG. 7A, the auxiliary wiring sheet 111 </ b> A is disposed on the surface of the cathode 107 with the first main surface on which the auxiliary wiring 110 is formed facing downward. At this time, the wiring pattern of the auxiliary wiring 110 has a pattern shape that does not depend on the light emitting region and the non-light emitting region. Therefore, it is not necessary to align the auxiliary wiring sheet 111A at the light emitting pixel level, and alignment may be performed at the light emitting panel level. Therefore, the manufacturing process can be simplified. Furthermore, since high-precision alignment is not required, it is not necessary to use a limited glass substrate with a small coefficient of thermal expansion that suppresses displacement in the surface direction due to thermal shrinkage as a substrate for auxiliary wiring. It becomes possible to use a low-cost resin material such as 111A. As a result, it is possible to impart bendability as a characteristic of the auxiliary wiring 110.

  Before placing the auxiliary wiring sheet 111A on the surface of the cathode 107, 1 wt% of copper fine particles (average diameter of 1 micrometer) are placed on the cathode 107 in a nitrogen dry box having a water and oxygen concentration of 5 ppm or less as a conductive material. The UV curable resin mixed as above may be dropped, and the auxiliary wiring sheet 111A may be disposed thereon. Thus, by pressurizing the resin film sandwiched between the cathode 107 and the auxiliary wiring 110, the pressed portion exhibits conductivity, and the substrate 101 and the auxiliary wiring 110 on which the cathode 107 is formed are formed. The auxiliary wiring sheet 111A thus formed is joined.

  Next, as shown in FIG. 7B, a sealing resin 111B is applied to the second main surface above the auxiliary wiring sheet 111A.

  In order to improve the sealing performance, for example, a 1 micrometer film made of silicon oxide is formed on the second main surface above the auxiliary wiring sheet 111A before applying the sealing resin 111B. Also good. Thereby, the sealing property of the region including the organic light emitting layer formed between the substrate 101 and the auxiliary wiring sheet 111A is ensured, so that it is possible to suppress the characteristic deterioration of each light emitting pixel.

  Here, apart from the above-described steps, the color filter 109R, 109G and 109B, the spacer 112, and the third main substrate as the third substrate different from the substrate 101 and the auxiliary wiring sheet 111A are formed on the first main surface of the upper substrate 108. Is formed. The color filters 109R, 109G, and 109B are formed so as to be disposed on the light emitting region when the upper substrate 108 and the substrate 101 are bonded. The spacer 112 is formed so as to be disposed on the partition wall 103 when the upper substrate 108 and the substrate 101 are joined. The spacer 112 is made of, for example, transparent plastic or acrylic and has a height of 10 μm.

  Next, as shown in FIG. 7C, the first main surface on which the color filters 109R, 109G, and 109B and the spacer 112 are formed is directed downward, and the sealing resin 111B to which the upper substrate 108 is applied is applied. Deploy.

  Next, as shown in FIG. 7D, the whole is heated to 120 ° C. while applying pressure downward from the second main surface side of the upper substrate 108. As a result, the sealing resin 111B is cured while the auxiliary wiring sheet 111A having a melting point of 120 ° C. or less is melted. At this time, the auxiliary wiring 110 disposed under the spacer 112 and the partition wall 103 come into contact with each other and become conductive. Finally, as shown in FIG. 7D, a resin film layer 111 in which the auxiliary wiring sheet 111A and the sealing resin 111B are integrated is formed. The auxiliary wiring 110 is formed in the resin film layer 111.

  Finally, the whole is cooled.

  The organic EL image display device 1 manufactured by the above manufacturing method has a feature that the aperture ratio of the light emitting region by the auxiliary wiring 110 is as high as 90%, and that the light emitting region and the non-light emitting region have the same aperture ratio. In other words, the reduction in aperture ratio is about 10%, which hardly affects the decrease in EL light emission brightness and lifetime.

  On the other hand, due to the low resistance of the auxiliary wiring 110, even if the substrate size is increased, the effect of the present invention is obtained that the light emission luminance at the center of the light emitting panel does not decrease due to the voltage drop.

  According to the above manufacturing method, it is not necessary to align the auxiliary wiring 110 formed on the cathode 107 with high accuracy at the light emitting pixel level, and the manufacturing process can be simplified. Furthermore, since high-precision alignment is not required in the formation of the auxiliary wiring 110, it is necessary to limit the use of a glass substrate with a small coefficient of thermal expansion that suppresses positional deviation in the surface direction due to thermal shrinkage as a substrate for the auxiliary wiring. For example, a low-cost material such as a resin substrate can be used.

  As described above, the organic EL image display device and the manufacturing method thereof according to the present invention have been described based on the embodiments. However, the organic EL image display device according to the present invention is not limited to the above embodiments. In the range which does not deviate from the main point of this invention with respect to another embodiment implement | achieved combining the arbitrary components in Embodiment 1-3 and its modification, Embodiment 1-3, and its modification. Modifications obtained by performing various modifications conceived by those skilled in the art and various devices incorporating the organic EL image display device according to the present invention are also included in the present invention.

  In Embodiments 1 to 3, the structure in which the light-emitting region includes the anode 102, the hole transport layer 104, the light-emitting layer 105, the electron transport layer 106, and the cathode 107 has been introduced; however, the present invention is not limited to this structure. For example, a hole injection layer may be inserted between the anode 102 and the hole transport layer 104, or an electron injection layer may be inserted between the electron transport layer 106 and the cathode 107.

  In the first to third embodiments, the mode in which the conduction between the auxiliary wiring and the cathode is set for each light emitting pixel is introduced. However, the conduction is set for each of the plurality of light emitting pixels due to the assumed voltage drop of the light emitting panel. Such an auxiliary wiring pattern may be used.

  Further, for example, the organic EL image display device according to the present invention is built in a thin flat TV as shown in FIG. A thin flat TV having a low-cost organic EL image display device in which luminance variation is suppressed and the manufacturing process is simplified is realized.

  The organic EL image display device according to the present invention is suitable for application to a large-screen active matrix organic EL display panel combined with a TFT.

1, 2, 800 Organic EL image display device 1A Organic EL element unit 1B Auxiliary wiring unit 1C Organic EL light control unit 10, 10B, 10G, 10R Light emitting pixel 100A Light emitting circuit unit 101, 810 Substrate 101A Drive circuit unit 102 Anode 103 Partition 104 Hole transport layer 105 Light emitting layer 106 Electron transport layer 107 Cathode 108 Upper substrate 109B, 109G, 109R Color filter 110, 110C, 110P, 120, 830 Auxiliary wiring 111 Resin film layer 111A Auxiliary wiring sheet 111B Sealing resin 112 Spacer 820 First electrode 840 Partition 845 Opening 850 Light modulation layer 860 Second electrode

Claims (13)

An organic electroluminescence image display device having a light emitting panel in which a plurality of light emitting pixels are arranged two-dimensionally,
Each of the plurality of light emitting pixels is
A light emitting region that emits light when current flows through an organic light emitting layer sandwiched between a first electrode layer formed separately for each of the light emitting pixels and a second electrode layer formed across the plurality of light emitting pixels;
The adjacent light emitting regions are spaced apart in the plane direction, and the non-light emitting region in which the second electrode layer is formed,
The light emitting panel includes an auxiliary wiring formed in contact with the second electrode layer and electrically connected to the second electrode layer.
The light emitting area aperture ratio, which is the ratio of the area of the plurality of light emitting areas not covered by the auxiliary wiring to the sum of the areas of the plurality of light emitting areas corresponding to the plurality of adjacent light emitting pixels, is the plurality of adjacent light emitting areas. An organic electroluminescence image display device having a non-light-emitting region aperture ratio equal to a ratio of an area of the plurality of non-light-emitting regions not covered by the auxiliary wiring to a sum of areas of a plurality of non-light-emitting regions corresponding to pixels. In each of the plurality of light emitting pixels,
The organic electroluminescence image display device according to claim 1, wherein an area where the auxiliary wiring covers the light emitting region is 50% or less of an area of the light emitting region. The organic electroluminescence image display device according to claim 1, wherein a line width of the auxiliary wiring is wider at a center portion of the light emitting panel than at a peripheral portion of the light emitting panel. In each of the plurality of light emitting pixels,
The organic electroluminescence image display device according to claim 1, wherein a wiring pattern of the auxiliary wiring on the light emitting region is the same as a wiring pattern of the auxiliary wiring on the non-light emitting region. The organic electroluminescence image display device according to claim 1, wherein the wiring pattern of the auxiliary wiring is a grid-like wiring pattern. The organic electroluminescence image display device according to claim 5, wherein the grid-like wiring pattern is inclined in a plane with respect to a direction of a pixel column. The first electrode layer, the organic light emitting layer, and the second electrode layer are formed in this order on the first main surface of the first substrate,
The auxiliary wiring is formed on a first main surface of a second substrate made of a resin different from the first substrate,
The first main surface of the first substrate and the first main surface of the second substrate are opposed to each other with a resin film layer for bonding the first substrate and the second substrate interposed therebetween. The organic electroluminescent image display apparatus of any one of -6. The organic electroluminescence image display device according to claim 7, wherein the resin film layer is conductive. The organic electroluminescence image display device according to claim 8, wherein the resin film layer is made of a resin film in which conductive fine particles are dispersed. The organic electroluminescence image display device according to any one of claims 7 to 9, wherein the second main surface of the second substrate is coated with a film containing silicon nitride or silicon oxide. A method of manufacturing an organic electroluminescence image display device having a light emitting panel in which a plurality of light emitting pixels having a light emitting region and a non-light emitting region are arranged two-dimensionally,
A first electrode layer is separately formed for each of the light emitting pixels on the first substrate, an organic light emitting layer is separately formed for each of the light emitting pixels on the first electrode layer, and the light emitting is formed on the organic light emitting layer. A light emitting layer forming step of forming a second electrode layer over the entire panel;
Unlike the first substrate, the second substrate made of resin is provided with an auxiliary wiring having a uniform wiring pattern on the first main surface at a plurality of adjacent light emitting pixel levels regardless of the light emitting region and the non-light emitting region. On the second electrode layer, the substrate is aligned in the plane direction only at the level of the light emitting panel larger than the light emitting pixel level, with the first main surface and the second electrode layer facing each other. A second substrate placement step of placing;
After the second substrate placement step, the first substrate and the second substrate are bonded by pressurizing the first substrate and the second substrate, and the auxiliary wiring and the second electrode layer are bonded to each other. A method for manufacturing an organic electroluminescence image display device, comprising: an auxiliary wiring conduction step for ensuring conductivity uniformly throughout the light emitting panel. In the second substrate placement step,
The light emitting region aperture ratio, which is the ratio of the area of the plurality of light emitting regions not covered by the auxiliary wiring to the area sum of the plurality of light emitting regions corresponding to the plurality of adjacent light emitting pixels, is the plurality of adjacent light emitting devices. The auxiliary wiring is equal to a non-light emitting region aperture ratio that is a ratio of an area of a region of the plurality of non-light emitting regions not covered by the auxiliary wiring to a sum of areas of the plurality of non light emitting regions corresponding to the pixels. The method of manufacturing an organic electroluminescence image display device according to claim 11, wherein the organic electroluminescence image display device is formed on the first main surface of the second substrate. After the second substrate placement step and before the auxiliary wiring conduction step,
A resin coating step of coating the entire surface of the second main surface of the second substrate with a sealing resin;
After the resin coating step, a third substrate having a color filter formed to be disposed on the light emitting region and a spacer formed to be disposed on the non-light emitting region on the first main surface. The organic electroluminescence image according to claim 11, further comprising: a third substrate disposing step disposed on the second substrate such that the first main surface and the second main surface of the second substrate face each other. Manufacturing method of display device.

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