JP2010242152A - Vacuum apparatus and set of susceptor - Google Patents

Vacuum apparatus and set of susceptor Download PDF

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JP2010242152A
JP2010242152A JP2009091035A JP2009091035A JP2010242152A JP 2010242152 A JP2010242152 A JP 2010242152A JP 2009091035 A JP2009091035 A JP 2009091035A JP 2009091035 A JP2009091035 A JP 2009091035A JP 2010242152 A JP2010242152 A JP 2010242152A
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susceptors
chamber
vacuum
processed
processing chamber
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Masaru Kitahara
大 北原
Sumuto Sakaguchi
澄人 坂口
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Shimadzu Corp
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<P>PROBLEM TO BE SOLVED: To provide a vacuum apparatus which can isolate a transportation system for a substrate from a high-temperature environment and a dust environment, and can prevent troubles caused by these environments from occurring therein. <P>SOLUTION: The vacuum apparatus includes: a chamber 1 which has first and second projecting portions on its upper part and can be evacuated; a transportation section 8 for transporting first and second susceptors 11 and 21 which mount a plurality of substrates to be treated 10a-10c and 20a-20c respectively thereon and heat the substrates; a treating chamber 4 that is defined to be a closed space formed under the first projecting portion by any one of the first and second susceptors 11 and 21, which partitions a part directly under a region formed by the first projecting portion; and a load lock chamber 7 which is defined to be a closed space formed under the second projecting portion by the other one of the first and second susceptors 11 and 21, which partitions a part directly under a region formed by the second projecting portion. Thereby, the first and second susceptors 11 and 21 are alternately transported between the load lock chamber 7 and the treating chamber 4. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、真空装置に係り、特に加熱部(ヒータ)を有する真空装置、及びこの真空装置へ被処理基板を搬入する際に用いるサセプタのセットに関する。   The present invention relates to a vacuum apparatus, and more particularly to a vacuum apparatus having a heating unit (heater) and a susceptor set used when a substrate to be processed is carried into the vacuum apparatus.

化学気相成長(CVD)装置等の真空装置が太陽電池製造プロセスや半導体製造プロセス等で用いられる。真空装置では、被処理基板を加熱し成膜プロセス等の処理が行われる(例えば、特許文献1及び2参照。)。   A vacuum apparatus such as a chemical vapor deposition (CVD) apparatus is used in a solar cell manufacturing process, a semiconductor manufacturing process, or the like. In the vacuum apparatus, the substrate to be processed is heated to perform a film forming process or the like (see, for example, Patent Documents 1 and 2).

従来の真空装置では、ロードロック室と処理室とがインラインに配置され、ロードロック室及び処理室の内部には、被処理基板を搬送する搬送系が設置されている。   In a conventional vacuum apparatus, a load lock chamber and a processing chamber are arranged in-line, and a transfer system for transferring a substrate to be processed is installed inside the load lock chamber and the processing chamber.

ロードロック室及び処理室内には基板加熱用及び基板保温用のヒータがそれぞれ設けられるため、ロードロック室及び処理室内は高温環境である。また、処理室内は、成膜プロセスによるパウダー状の副生成物や着膜剥離片等のダストの多い環境である。   Since the load lock chamber and the processing chamber are provided with heaters for heating the substrate and the substrate, respectively, the load lock chamber and the processing chamber are in a high temperature environment. Further, the inside of the processing chamber is a dusty environment such as a powdery by-product or a film peeling piece by a film forming process.

このような環境内に基板の搬送系が設置されると、ベアリングのグリス劣化、ダストのかみこみ等により搬送駆動のトラブルが短期間のうちに発生する可能性が高い。   If the substrate transport system is installed in such an environment, there is a high possibility that troubles in transport driving will occur in a short period of time due to grease deterioration of the bearing, dust trapping, and the like.

特開平5−295551号公報JP-A-5-295551 特開2001−239144号公報JP 2001-239144 A

本発明の目的は、基板の搬送系を高温環境、ダスト環境から隔離でき、それらの環境に起因するトラブルを回避可能な真空装置、及びこの真空装置へ被処理基板を搬入する際に用いるサセプタのセットを提供することである。   An object of the present invention is to provide a vacuum device that can isolate a substrate transfer system from a high temperature environment and a dust environment and avoid troubles caused by these environments, and a susceptor used when a substrate to be processed is carried into the vacuum device. Is to provide a set.

本発明の一態様によれば、(イ)第1及び第2の凸部を上部に有し、真空排気可能なチャンバと、(ロ)複数の被処理基板をそれぞれ載置し加熱する第1及び第2のサセプタを搬送する搬送部とを備え、第1の凸部がなす領域の直下を第1及び第2のサセプタのいずれかが仕切ることにより閉じた空間を構成し、第1の凸部に処理室をチャンバの内部に定義し、第2の凸部がなす領域の直下を、第1及び第2のサセプタの他のいずれかが仕切ることにより閉じた空間を構成し、第2の凸部にロードロック室をチャンバの内部に定義し、第1及び第2のサセプタをロードロック室側から処理室側に交互に搬送し、処理室において複数の被処理基板を処理し、この処理後、処理室側からロードロック室側に第1及び第2のサセプタを交互に搬送する真空装置が提供される。   According to one aspect of the present invention, (b) a first chamber having first and second protrusions at the top and capable of being evacuated, and (b) a plurality of substrates to be processed are mounted and heated, respectively. And a transport unit that transports the second susceptor, and the first projecting part forms a closed space by partitioning one of the first and second susceptors directly below the region formed by the first projecting part. A processing chamber is defined in the chamber, and a closed space is formed by partitioning a region immediately below the region formed by the second convex portion by any of the other ones of the first and second susceptors. A load lock chamber is defined inside the chamber in the convex portion, and the first and second susceptors are alternately transferred from the load lock chamber side to the processing chamber side, and a plurality of substrates to be processed are processed in the processing chamber. Thereafter, the first and second susceptors are alternately conveyed from the processing chamber side to the load lock chamber side. Vacuum apparatus is provided.

本発明の他の態様は、第1及び第2の凸部を上部に有し、真空排気可能なチャンバを有する真空装置に用いられる第1及び第2のサセプタを含むサセプタのセットに関する。この他の態様に係る第1及び第2のサセプタのそれぞれによれば、(イ)第1の凸部がなす領域の直下を第1及び第2のサセプタのいずれかが仕切ることにより閉じた空間を構成し、第1の凸部に処理室をチャンバの内部に定義し、第2の凸部がなす領域の直下を、第1及び第2のサセプタの他のいずれかが仕切ることにより閉じた空間を構成し、第2の凸部にロードロック室をチャンバの内部に定義することが可能な真空仕切板と、(ロ)真空仕切板の周辺部が真空シール部として露出するように、真空仕切板より小さな専有面積で、真空仕切板の上方に配置され、複数の被処理基板をそれぞれ載置する基板載置部と、(ハ)基板載置部と真空仕切板の間に挟まれ、複数の被処理基板をそれぞれ加熱する基板載置部とを備える。そして、第1及び第2のサセプタが、ロードロック室側から処理室側に交互に搬送され、処理室において複数の被処理基板が処理され、該処理後、処理室側からロードロック室側に第1及び第2のサセプタが交互に搬送される。   Another aspect of the present invention relates to a susceptor set including first and second susceptors used in a vacuum apparatus having first and second convex portions on the upper portion and having a chamber that can be evacuated. According to each of the 1st and 2nd susceptor which concerns on this other aspect, (a) The space closed by either the 1st and 2nd susceptor partitioning directly under the area | region which a 1st convex part makes | forms And the processing chamber is defined in the interior of the chamber on the first convex portion, and the area immediately below the region formed by the second convex portion is closed by partitioning one of the other of the first and second susceptors. A vacuum partition plate that defines a space and can define a load lock chamber inside the chamber on the second convex portion, and (b) a vacuum so that a peripheral portion of the vacuum partition plate is exposed as a vacuum seal portion. A substrate mounting unit having a smaller area than the partition plate and disposed above the vacuum partition plate and mounting a plurality of substrates to be processed; and (c) sandwiched between the substrate mounting unit and the vacuum partition plate, And a substrate placement unit for heating each of the substrates to be processed. Then, the first and second susceptors are alternately transferred from the load lock chamber side to the processing chamber side, and a plurality of substrates to be processed are processed in the processing chamber. After the processing, the processing chamber side moves to the load lock chamber side. The first and second susceptors are conveyed alternately.

本発明によれば、基板の搬送系を高温環境、ダスト環境から隔離でき、それらの環境に起因するトラブルを回避可能な真空装置、及びこの真空装置へ被処理基板を搬入する際に用いるサセプタのセットを提供することができる。   According to the present invention, a substrate transport system can be isolated from a high temperature environment and a dust environment, and a vacuum device capable of avoiding troubles caused by those environments, and a susceptor used when a substrate to be processed is carried into the vacuum device. Set can be offered.

本発明の実施の形態に係る真空装置の一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の第1及び第2のサセプタ及び回転体の一例を示す概略上面図である。It is a schematic top view which shows an example of the 1st and 2nd susceptor and rotary body of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するためのフローチャートである。It is a flowchart for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための概略断面図である。It is a schematic sectional drawing for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図4に引き続く概略断面図である。FIG. 5 is a schematic cross-sectional view subsequent to FIG. 4 for explaining an example of the operation method of the vacuum apparatus according to the embodiment of the present invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図5に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 5 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図6に引き続く概略断面図である。FIG. 7 is a schematic cross-sectional view subsequent to FIG. 6 for explaining an example of the operation method of the vacuum apparatus according to the embodiment of the present invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図7に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 7 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図8に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 8 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための94に引き続く概略断面図である。It is a schematic sectional drawing following 94 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図10に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 10 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図11に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 11 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図12に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 12 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図13に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 13 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図14に引き続く概略断面図である。It is a schematic sectional drawing following FIG. 14 for demonstrating an example of the operating method of the vacuum apparatus which concerns on embodiment of this invention. 本発明の実施の形態に係る真空装置の動作方法の一例を説明するための図15に引き続く概略断面図である。FIG. 16 is a schematic cross-sectional view subsequent to FIG. 15 for describing an example of the operation method of the vacuum apparatus according to the embodiment of the present invention.

次に、図面を参照して、本発明の実施の形態を説明する。以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。ただし、図面は模式的なものであり、厚みと平面寸法との関係、各層の厚みの比率等は現実のものとは異なることに留意すべきである。したがって、具体的な厚みや寸法は以下の説明を参酌して判断すべきものである。又、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることはもちろんである。   Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

また、以下に示す実施の形態は、この発明の技術的思想を具体化するための装置や方法を例示するものであって、この発明の技術的思想は、構成部品の材質、形状、構造、配置等を下記のものに特定するものでない。この発明の技術的思想は、特許請求の範囲において、種々の変更を加えることができる。   Further, the embodiments described below exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention includes the material, shape, structure, The layout is not specified as follows. The technical idea of the present invention can be variously modified within the scope of the claims.

(真空装置)
本発明の実施の形態に係る真空装置は、図1に示すように、第1及び第2の凸部を上部に有し、真空排気可能なチャンバ1と、複数の被処理基板10a,10b,10c,20a,20b,20cをそれぞれ載置し加熱する第1及び第2のサセプタ(サセプタのセット)11,21を搬送する搬送部8とを備える。本発明の実施の形態に係る真空装置では、第1の凸部がなす領域の直下を第1及び第2のサセプタ11,21のいずれかが仕切ることにより閉じた空間を構成し、第1の凸部に処理室4がチャンバ1の内部に定義される。また、第2の凸部がなす領域の直下を、第1及び第2のサセプタ11,21の他のいずれかが仕切ることにより閉じた空間を構成し、第2の凸部にロードロック室7がチャンバ1の内部に定義される。なお、「第1の凸部」及び「第2の凸部」は単なる定義の問題であって、図1では、便宜上、チャンバ30の上部の左側の領域を「第1の凸部」、チャンバ30の上部の右側の領域を「第2の凸部」と定義しているが、逆に、図1の右側を「第1の凸部」、図1の左側を「第2の凸部」と定義しても良く、更には、第1の凸部がなす密閉領域がロードロック室7として定義され、第2の凸部がなす密閉領域が処理室4として定義されるとしても良い。
(Vacuum device)
As shown in FIG. 1, the vacuum apparatus according to the embodiment of the present invention includes a chamber 1 having first and second convex portions on the upper portion, which can be evacuated, and a plurality of substrates to be processed 10a, 10b, And 10c, 20a, 20b, and 20c, respectively, and a transport unit 8 that transports first and second susceptors (set of susceptors) 11 and 21 for heating. In the vacuum apparatus according to the embodiment of the present invention, a closed space is formed by partitioning one of the first and second susceptors 11 and 21 directly below the region formed by the first protrusion, A processing chamber 4 is defined inside the chamber 1 at the convex portion. Further, a space that is closed by partitioning one of the other portions of the first and second susceptors 11 and 21 directly below the region formed by the second convex portion is formed, and the load lock chamber 7 is formed on the second convex portion. Is defined inside the chamber 1. Note that the “first convex portion” and the “second convex portion” are merely problems of definition, and in FIG. 1, for the sake of convenience, the upper left region of the chamber 30 is referred to as the “first convex portion” and the chamber. 30 is defined as a “second convex portion”, but conversely, the right side of FIG. 1 is a “first convex portion” and the left side of FIG. 1 is a “second convex portion”. Further, the sealed region formed by the first convex portion may be defined as the load lock chamber 7, and the sealed region formed by the second convex portion may be defined as the processing chamber 4.

そして、第1及び第2のサセプタ11,21をロードロック室7側から処理室4側に交互に搬送し、処理室4において複数の被処理基板10a,10b,10c,20a,20b,20cを処理し、この処理後、処理室4側からロードロック室7側に第1及び第2のサセプタ11,21を交互に搬送する。   Then, the first and second susceptors 11 and 21 are alternately transferred from the load lock chamber 7 side to the processing chamber 4 side, and a plurality of substrates 10a, 10b, 10c, 20a, 20b, and 20c are processed in the processing chamber 4. After the processing, the first and second susceptors 11 and 21 are alternately conveyed from the processing chamber 4 side to the load lock chamber 7 side.

本発明の実施の形態に係る真空装置としては、例えば、シリコン酸化膜(SiO2膜)、燐ガラス(PSG)膜、硼素ガラス(BSG)膜、硼素燐ガラス(BPSG)膜、シリコン窒化膜(Si34膜)又はポリシリコン膜等を成膜する化学気相成長(CVD)装置等が採用できる。 As the vacuum apparatus according to the embodiment of the present invention, for example, a silicon oxide film (SiO 2 film), a phosphorus glass (PSG) film, a boron glass (BSG) film, a boron phosphorous glass (BPSG) film, a silicon nitride film ( A chemical vapor deposition (CVD) apparatus for forming a Si 3 N 4 film) or a polysilicon film or the like can be employed.

被処理基板10a,10b,10c,20a,20b,20cとしては、半導体装置や太陽電池等を製造する場合にはシリコン(Si)等の半導体基板等が使用可能である。又、液晶表示装置を製造する場合にはガラス基板等が、光記録媒体を製造する場合にはポリカーボネイト等の樹脂基板等が被処理基板10a,10b,10c,20a,20b,20cとして用いられても良い。勿論これらのガラス基板や樹脂基板の上には工程の進行に応じて種々の薄膜が形成されうる。   As the substrates to be processed 10a, 10b, 10c, 20a, 20b, 20c, a semiconductor substrate such as silicon (Si) can be used in the case of manufacturing a semiconductor device, a solar cell or the like. Further, when manufacturing a liquid crystal display device, a glass substrate or the like is used as a substrate to be processed 10a, 10b, 10c, 20a, 20b, or 20c, when manufacturing an optical recording medium, such as a resin substrate such as polycarbonate. Also good. Of course, various thin films can be formed on these glass substrates and resin substrates as the process proceeds.

処理室4にはプラズマ放電のための電極5が配置されている。又、本発明の実施の形態に係る真空装置が上記のCVD装置の例では、処理室4には、図示を省略するが、処理室4内に成膜ガスやパージガス等の種々のガスを供給するためのガス供給部や、処理室4の温度を検出する温度センサ、処理室4内を真空排気する真空ポンプ等の成膜プロセスに必要な部材が備えられている。又、本発明の実施の形態に係る真空装置が分子線エピタキシャル(MBE)装置ならばクヌーセンセルが、スパッタリング装置ならば放電電極が、真空蒸着装置ならば電子ビーム(EB)装置等が処理室4に備えられている。   An electrode 5 for plasma discharge is disposed in the processing chamber 4. In the example of the above-described CVD apparatus, the vacuum apparatus according to the embodiment of the present invention supplies the processing chamber 4 with various gases such as a film forming gas and a purge gas, although not shown. A member necessary for a film forming process such as a gas supply unit for detecting the temperature, a temperature sensor for detecting the temperature of the processing chamber 4, and a vacuum pump for evacuating the processing chamber 4 are provided. If the vacuum apparatus according to the embodiment of the present invention is a molecular beam epitaxial (MBE) apparatus, the Knudsen cell is used. If it is a sputtering apparatus, the discharge electrode is used. If it is a vacuum deposition apparatus, the electron beam (EB) apparatus is used. Is provided.

ロードロック室7は、チャンバ1を大気に開放しないよう被処理基板10a,10b,10c,20a,20b,20cを出し入れする機構を備える。ロードロック室7は、Oリング61を介してチャンバ1と接続する開閉可能な蓋6を備える。又、ロードロック室7には、図示を省略するが、ロードロック室7内を真空排気する真空ポンプが設置されている。   The load lock chamber 7 includes a mechanism for taking in and out the substrates 10a, 10b, 10c, 20a, 20b, and 20c so as not to open the chamber 1 to the atmosphere. The load lock chamber 7 includes an openable / closable lid 6 connected to the chamber 1 through an O-ring 61. The load lock chamber 7 is provided with a vacuum pump that evacuates the load lock chamber 7 although not shown.

第1のサセプタ11は、第1及び第2の凸部がなす領域の直下を仕切ることが可能な第1の真空仕切板12と、第1の真空仕切板12上に配置された第1の加熱部(ヒータ)13と、第1の加熱部13上に配置され、複数の被処理基板10a,10b,10cをそれぞれ載置する第1の基板載置部14とを備える。第2のサセプタ21は、第1及び第2の凸部がなす領域の直下を仕切ることが可能な第2の真空仕切板22と、第2の真空仕切板22上に配置された第2の加熱部(ヒータ)23と、第2の加熱部23上に配置され、複数の被処理基板20a,20b,20cをそれぞれ載置する第2の基板載置部24とを備える。第1及び第2の加熱部13,23としては、プレートヒータやランプヒータ等が使用可能である。第1及び第2の加熱部13,23は、第1及び第2のサセプタ11,21のそれぞれを、設定温度(成膜プロセス温度)に保持する。第1及び第2の加熱部13,23は例えば回転軸2の内部を介して電源に接続されている。第1の真空仕切板12の周辺部は、真空シール部として平坦な上面が露出し、Oリング62を介してロードロック室7の下部に接続し、ロードロック室7が密閉される。第2の真空仕切板22の周辺部も真空シール部として機能するように平坦な上面が露出し、第2の真空仕切板22の周辺部がOリング41を介して処理室4の下部に接続し、処理室4が密閉される。   The first susceptor 11 includes a first vacuum partition plate 12 capable of partitioning a region immediately below the region formed by the first and second protrusions, and a first vacuum partition plate 12 disposed on the first vacuum partition plate 12. A heating unit (heater) 13 and a first substrate mounting unit 14 disposed on the first heating unit 13 and mounting a plurality of substrates to be processed 10a, 10b, 10c, respectively, are provided. The second susceptor 21 includes a second vacuum partition plate 22 capable of partitioning directly under the region formed by the first and second protrusions, and a second vacuum partition plate 22 disposed on the second vacuum partition plate 22. A heating unit (heater) 23 and a second substrate mounting unit 24 disposed on the second heating unit 23 and each mounting a plurality of substrates to be processed 20a, 20b, 20c are provided. As the first and second heating units 13 and 23, a plate heater, a lamp heater, or the like can be used. The first and second heating units 13 and 23 hold the first and second susceptors 11 and 21 at a set temperature (film formation process temperature), respectively. The 1st and 2nd heating parts 13 and 23 are connected to the power supply via the inside of the rotating shaft 2, for example. A flat upper surface of the peripheral portion of the first vacuum partition plate 12 is exposed as a vacuum seal portion, and is connected to a lower portion of the load lock chamber 7 through an O-ring 62 so that the load lock chamber 7 is sealed. The flat upper surface is exposed so that the peripheral portion of the second vacuum partition plate 22 also functions as a vacuum seal portion, and the peripheral portion of the second vacuum partition plate 22 is connected to the lower portion of the processing chamber 4 via the O-ring 41. Then, the processing chamber 4 is sealed.

第1の基板載置部14は、図1及び図2に示すように、被処理基板10a,10b,10c,10d,10e,10f,10g,10h,10iを載置する。第2の基板載置部24は、被処理基板20a,20b,20c,20d,20e,20f,20g,20h,20iを載置する。第1及び第2の基板載置部14,24のそれぞれは、例えばカーボンからなる均熱板である。なお、図2では便宜上、第1の基板載置部14に9つの被処理基板10a,10b,10c,10d,10e,10f,10g,10h,10iが載置され、第2の基板載置部24に9つの被処理基板20a,20b,20c,20d,20e,20f,20g,20h,20iが載置された場合を図示しているが、第1及び第2の基板載置部14,24の表面のサイズ、第1及び第2の基板載置部14,24に載置する被処理基板のサイズ及び枚数は特に限定されないが、第1の真空仕切板12の周辺部及び第2の真空仕切板22の周辺部が真空シール部として露出するように、第1及び第2の基板載置部14,24は、真空仕切板12,22よりも小さな専有面積で、真空仕切板12,22の上方に配置される。   As shown in FIGS. 1 and 2, the first substrate placement unit 14 places the substrates to be processed 10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, and 10i. The second substrate placement unit 24 places the substrates to be processed 20a, 20b, 20c, 20d, 20e, 20f, 20g, 20h, and 20i. Each of the 1st and 2nd board | substrate mounting parts 14 and 24 is a soaking plate which consists of carbon, for example. In FIG. 2, for convenience, nine substrates to be processed 10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, and 10i are placed on the first substrate placing portion 14, and the second substrate placing portion. 24 shows a case where nine substrates to be processed 20a, 20b, 20c, 20d, 20e, 20f, 20g, 20h, and 20i are placed, but the first and second substrate placement portions 14 and 24 are shown. The surface size of the substrate, the size and number of substrates to be processed placed on the first and second substrate placement portions 14 and 24 are not particularly limited, but the peripheral portion of the first vacuum partition plate 12 and the second vacuum The first and second substrate mounting portions 14 and 24 have a smaller occupied area than the vacuum partition plates 12 and 22 so that the peripheral portion of the partition plate 22 is exposed as a vacuum seal portion. Is disposed above.

図1に示した搬送部8は、第1及び第2のサセプタ11,21をそれぞれ支持する第1及び第2のサセプタ支持部15,25と、第1及び第2のサセプタ支持部15,25にそれぞれ取り付けられ、第1及び第2のサセプタ11,21をそれぞれ昇降させる第1及び第2の昇降部16,26と、第1及び第2のサセプタ11,21を載置し、第1及び第2のサセプタ11,21が、第1の凸部がなす領域の直下、及び第2の凸部がなす領域の直下に、交互に位置するように回転する回転体3と、回転体を回転させる回転軸2を備える。回転体3には第1及び第2のサセプタ支持部15,25が貫通する大きさの開口部が設けられている。回転体3を回転させる際には、回転体3の上面に第1及び第2のサセプタ11,21が載置される。そして、第1及び第2のサセプタ支持部15,25が第1及び第2のサセプタ11,21と分離し、第1及び第2の加熱部13,23、第1及び第2のサセプタ支持部15,25が回転体3よりも下方に退避される。   1 includes first and second susceptor support portions 15 and 25 for supporting the first and second susceptors 11 and 21, and first and second susceptor support portions 15 and 25, respectively. Are mounted on the first and second susceptors 11 and 21, respectively, and the first and second susceptors 11 and 21 are mounted on the first and second susceptors 11 and 21, respectively. The second susceptors 11 and 21 rotate the rotating body 3 and the rotating body that rotate so as to be alternately positioned directly below the area formed by the first protrusion and directly below the area formed by the second protrusion. A rotating shaft 2 is provided. The rotating body 3 is provided with an opening having a size through which the first and second susceptor support portions 15 and 25 penetrate. When the rotating body 3 is rotated, the first and second susceptors 11 and 21 are placed on the upper surface of the rotating body 3. And the 1st and 2nd susceptor support parts 15 and 25 isolate | separate from the 1st and 2nd susceptors 11 and 21, and the 1st and 2nd heating parts 13 and 23, the 1st and 2nd susceptor support parts 15 and 25 are retracted below the rotating body 3.

第1の昇降部16は、第1のサセプタ支持部15を介して、第1及び第2のサセプタ11,21のいずれかを、回転体3上からロードロック室7の下部までの間をそれぞれ昇降させる。第2の昇降部26は、第2のサセプタ支持部25を介して、第1及び第2のサセプタ11,21のいずれかを、回転体3上から処理室4の下部までの間をそれぞれ昇降させる。第1及び第2の昇降部16,26は、第1及び第2のサセプタ11,21を同時に昇降させてもよく、個別に昇降させることも可能である。   The first elevating unit 16 is configured to place one of the first and second susceptors 11 and 21 between the rotating body 3 and the lower portion of the load lock chamber 7 via the first susceptor support unit 15. Move up and down. The second elevating unit 26 elevates or lowers one of the first and second susceptors 11 and 21 from the rotating body 3 to the lower part of the processing chamber 4 via the second susceptor support unit 25. Let The 1st and 2nd raising / lowering parts 16 and 26 may raise / lower the 1st and 2nd susceptors 11 and 21 simultaneously, and can also raise / lower separately.

回転軸2には、真空導入継手(真空ポンプ)9が取り付けられている。真空ポンプ9により、チャンバ1内は真空に維持される。本発明の実施の形態においては、処理室4の図示を省略した真空ポンプ及びチャンバ1の真空ポンプ9により、処理室4及びチャンバ1内を個々に真空排気しても良い。また、真空ポンプ9により処理室4及びチャンバ1内を一括して真空排気する構成であっても良い。また、真空ポンプ9がなく、処理室4の図示を省略した真空ポンプにより、処理室4及びチャンバ1内を一括して真空排気する構成であっても良い。   A vacuum introduction joint (vacuum pump) 9 is attached to the rotary shaft 2. The inside of the chamber 1 is maintained in a vacuum by the vacuum pump 9. In the embodiment of the present invention, the inside of the processing chamber 4 and the chamber 1 may be individually evacuated by a vacuum pump (not shown) of the processing chamber 4 and the vacuum pump 9 of the chamber 1. Further, the processing chamber 4 and the chamber 1 may be collectively evacuated by the vacuum pump 9. Further, the vacuum pump 9 may be omitted, and the processing chamber 4 and the chamber 1 may be collectively evacuated by a vacuum pump that does not illustrate the processing chamber 4.

(真空装置の動作方法)
次に、本発明の実施の形態に係る真空装置の動作方法を、図3のフローチャートを参照しながら説明する。
(Operation method of vacuum equipment)
Next, an operation method of the vacuum apparatus according to the embodiment of the present invention will be described with reference to the flowchart of FIG.

(イ)ステップS11において、図4に示すように、第1の昇降部16を駆動して第1のサセプタ11を上昇させる。第1の真空仕切板12がOリング62を介してロードロック室7の下部に接続し、ロードロック室7が密閉される。ロードロック室7内を大気圧に戻した後、図5に示すように、ロードロック室7の蓋6を開け、図示を省略した移載機を用いて第1の基板載置部14に被処理基板10a,10b,10cを載置する。その後、蓋6を閉じ、ロードロック室7内が真空排気される。第1の加熱部13は常時オンしており、第1の加熱部13により第1の基板載置部14を介して被処理基板10a,10b,10cは加熱され設定温度(成膜プロセス温度)まで瞬時に昇温される。   (A) In step S11, as shown in FIG. 4, the 1st raising / lowering part 16 is driven and the 1st susceptor 11 is raised. The first vacuum partition plate 12 is connected to the lower portion of the load lock chamber 7 via the O-ring 62, and the load lock chamber 7 is sealed. After returning the inside of the load lock chamber 7 to atmospheric pressure, as shown in FIG. 5, the lid 6 of the load lock chamber 7 is opened, and the first substrate platform 14 is covered with a transfer machine (not shown). The processing substrates 10a, 10b, and 10c are placed. Thereafter, the lid 6 is closed, and the inside of the load lock chamber 7 is evacuated. The first heating unit 13 is always turned on, and the substrates to be processed 10a, 10b, and 10c are heated by the first heating unit 13 via the first substrate mounting unit 14 and set temperature (film forming process temperature). The temperature is instantaneously increased.

(ロ)ステップS12において、ロードロック室7内が所定圧力となったら、図6に示すように、第1の昇降部16を駆動して第1のサセプタ11を降下させ、第1のサセプタ11を予め真空排気されたチャンバ1に導入する。第1のサセプタ11が回転体3上まで降下した後、図7に示すように、回転体3を回転させ、第1及び第2のサセプタ11,21が処理室4及びロードロック室7直下にそれぞれ位置するように、第1及び第2のサセプタ11,21を水平移動させる。その後、図8に示すように、第1及び第2の昇降部16,26を駆動して、第1及び第2のサセプタ11,21を同時にそれぞれ上昇させる。この結果、真空シール部として機能する第2の真空仕切板22の周辺部がOリング41を介して処理室4の下部に接続し、処理室4が密閉される。又、真空シール部として機能する第1の真空仕切板12の周辺部がOリング62を介してロードロック室7の下部に接続し、ロードロック室7が密閉される。   (B) In step S12, when the pressure in the load lock chamber 7 reaches a predetermined pressure, the first elevating unit 16 is driven to lower the first susceptor 11 as shown in FIG. Is introduced into the chamber 1 evacuated in advance. After the first susceptor 11 is lowered onto the rotator 3, as shown in FIG. 7, the rotator 3 is rotated so that the first and second susceptors 11 and 21 are directly below the processing chamber 4 and the load lock chamber 7. The first and second susceptors 11 and 21 are horizontally moved so as to be positioned respectively. Thereafter, as shown in FIG. 8, the first and second elevating parts 16 and 26 are driven to raise the first and second susceptors 11 and 21 simultaneously, respectively. As a result, the peripheral portion of the second vacuum partition plate 22 functioning as a vacuum seal portion is connected to the lower portion of the processing chamber 4 via the O-ring 41, and the processing chamber 4 is sealed. Further, the peripheral portion of the first vacuum partition plate 12 functioning as a vacuum seal portion is connected to the lower portion of the load lock chamber 7 via the O-ring 62, and the load lock chamber 7 is sealed.

(ハ)ステップS13において、処理室4において被処理基板10a,10b,10cに対して成膜プロセスが行われる。処理室4内は予め所定圧力まで真空排気されている。被処理基板10a,10b,10cは予め設定温度(成膜プロセス温度)まで昇温されているので直ちに処理を開始することができる。成膜プロセス中は第1の加熱部13により被処理基板10a,10b,10cの温度が設定温度(成膜プロセス温度)に保持される。一方、ロードロック室7側では、ステップS14において、ロードロック室7内が大気圧に戻された後、図9に示すようにロードロック室7の蓋6を開け、図示を省略した移載機を用いて第2の基板載置部24に被処理基板20a,20b,20cを載置する。その後、蓋6を閉じ、ロードロック室7内が真空排気される。このとき、第2の加熱部23は常時オンしており、第2の加熱部23により第2の基板載置部24を介して被処理基板20a,20b,20cは加熱され設定温度(成膜プロセス温度)まで瞬時に昇温する。   (C) In step S13, a film forming process is performed on the substrates to be processed 10a, 10b, and 10c in the processing chamber 4. The processing chamber 4 is evacuated to a predetermined pressure in advance. Since the substrates 10a, 10b, and 10c to be processed have been heated to a preset temperature (film formation process temperature) in advance, the processing can be started immediately. During the film forming process, the temperature of the substrates 10a, 10b, and 10c to be processed is maintained at a set temperature (film forming process temperature) by the first heating unit 13. On the other hand, on the load lock chamber 7 side, after the load lock chamber 7 is returned to atmospheric pressure in step S14, the lid 6 of the load lock chamber 7 is opened as shown in FIG. Are used to place the substrates to be processed 20a, 20b, 20c on the second substrate placement unit 24. Thereafter, the lid 6 is closed, and the inside of the load lock chamber 7 is evacuated. At this time, the second heating unit 23 is always turned on, and the substrates to be processed 20a, 20b, and 20c are heated by the second heating unit 23 via the second substrate mounting unit 24, and set temperature (film formation). The temperature is instantaneously increased to the process temperature.

(ニ)ステップS15において、ロードロック室7内が所定圧力となったら、図10に示すように、第1の昇降部16を駆動して第2のサセプタ21を降下させ、第2のサセプタ21を予め真空排気されたチャンバ1に導入する。一方、処理室4側では、成膜プロセスが終了した後、第2の昇降部26を駆動して第1のサセプタ11を降下させ、第1のサセプタ11を予め真空排気されたチャンバ1に導入する。第1及び第2のサセプタ11,21がそれぞれ回転体3上まで降下した後、図11に示すように回転体3を回転させ、第1及び第2のサセプタ11,21がロードロック室7及び処理室4直下にそれぞれ位置するように、第1及び第2のサセプタ11,21を水平移動させる。その後、図12に示すように、第1及び第2の昇降部16,26を駆動して、第1及び第2のサセプタ11,21をそれぞれ上昇させる。第2の真空仕切板22がOリング41を介して処理室4の下部に接続し、処理室4が密閉される。又、第1の真空仕切板12がOリング62を介してロードロック室7の下部に接続し、ロードロック室7が密閉される。   (D) In step S15, when the pressure in the load lock chamber 7 reaches a predetermined pressure, the first elevating unit 16 is driven to lower the second susceptor 21 as shown in FIG. Is introduced into the chamber 1 evacuated in advance. On the other hand, on the processing chamber 4 side, after the film formation process is completed, the second elevating unit 26 is driven to lower the first susceptor 11 and the first susceptor 11 is introduced into the chamber 1 evacuated in advance. To do. After the first and second susceptors 11 and 21 are respectively lowered onto the rotating body 3, the rotating body 3 is rotated as shown in FIG. 11, and the first and second susceptors 11 and 21 are connected to the load lock chamber 7 and The first and second susceptors 11 and 21 are horizontally moved so as to be positioned immediately below the processing chamber 4. Then, as shown in FIG. 12, the 1st and 2nd raising / lowering parts 16 and 26 are driven, and the 1st and 2nd susceptors 11 and 21 are raised, respectively. The second vacuum partition plate 22 is connected to the lower part of the processing chamber 4 via the O-ring 41, and the processing chamber 4 is sealed. Further, the first vacuum partition plate 12 is connected to the lower portion of the load lock chamber 7 via the O-ring 62, and the load lock chamber 7 is sealed.

(ホ)ステップS16において、処理室4において被処理基板20a,20b,20cに対して成膜プロセスが行われる。処理室4内は予め所定圧力まで真空排気されている。被処理基板20a,20b,20cは予め設定温度(成膜プロセス温度)まで昇温されているので直ちに処理を開始することができる。成膜プロセス中は第2の加熱部23により被処理基板20a,20b,20cの温度が設定温度(成膜プロセス温度)に保持される。一方、ロードロック室7側では、ステップS17において、ロードロック室7内が大気圧に戻された後、ロードロック室7の蓋6を開け、図示を省略した移載機を用いて被処理基板10a,10b,10cを回収する。ステップS18において、未処理の被処理基板があれば、ステップS19において、図示を省略した移載機を用いて図13に示すように第1の基板載置部14に未処理の被処理基板30a,30b,30cを載置する。   (E) In step S16, a film forming process is performed on the substrates 20a, 20b, and 20c in the processing chamber 4. The processing chamber 4 is evacuated to a predetermined pressure in advance. Since the substrates 20a, 20b, and 20c to be processed have been heated to a preset temperature (film formation process temperature) in advance, the processing can be started immediately. During the film formation process, the temperature of the substrates 20a, 20b, and 20c to be processed is maintained at the set temperature (film formation process temperature) by the second heating unit 23. On the other hand, on the load lock chamber 7 side, after the inside of the load lock chamber 7 is returned to the atmospheric pressure in step S17, the lid 6 of the load lock chamber 7 is opened, and a substrate to be processed is used using a transfer machine (not shown). 10a, 10b, and 10c are collected. In step S18, if there is an unprocessed substrate to be processed, in step S19, an unprocessed substrate 30a that is not processed in the first substrate platform 14 as shown in FIG. , 30b, 30c are placed.

(ヘ)ステップS20において、ロードロック室7内が所定圧力となったら、図14に示すように、第1の昇降部16を駆動して第1のサセプタ11を降下させ、第1のサセプタ11を予め真空排気されたチャンバ1に導入する。一方、処理室4側では、成膜プロセスが終了した後、第2の昇降部26を駆動して第2のサセプタ21を降下させ、第2のサセプタ21を予め真空排気されたチャンバ1に導入する。第1及び第2のサセプタ11,21がそれぞれ回転体3上まで降下した後、図15に示すように回転体3を回転させ、第1及び第2のサセプタ11,21が処理室4及びロードロック室7直下にそれぞれ位置するように、第1及び第2のサセプタ11,21を水平移動させる。その後、図16に示すように、第1及び第2の昇降部16,26を駆動して、第1及び第2のサセプタ11,21をそれぞれ上昇させる。第1の真空仕切板12がOリング41を介して処理室4の下部に接続し、処理室4が密閉される。又、第2の真空仕切板22がOリング62を介してロードロック室7の下部に接続し、ロードロック室7が密閉される。   (F) In step S20, when the inside of the load lock chamber 7 reaches a predetermined pressure, the first elevating unit 16 is driven to lower the first susceptor 11 as shown in FIG. Is introduced into the chamber 1 evacuated in advance. On the other hand, on the processing chamber 4 side, after the film formation process is completed, the second elevating unit 26 is driven to lower the second susceptor 21 and the second susceptor 21 is introduced into the chamber 1 that has been evacuated in advance. To do. After the first and second susceptors 11 and 21 are respectively lowered onto the rotating body 3, the rotating body 3 is rotated as shown in FIG. 15, and the first and second susceptors 11 and 21 are moved to the processing chamber 4 and the load. The first and second susceptors 11 and 21 are horizontally moved so as to be positioned directly below the lock chamber 7, respectively. Thereafter, as shown in FIG. 16, the first and second elevating parts 16 and 26 are driven to raise the first and second susceptors 11 and 21, respectively. The first vacuum partition plate 12 is connected to the lower part of the processing chamber 4 via the O-ring 41, and the processing chamber 4 is sealed. Further, the second vacuum partition plate 22 is connected to the lower portion of the load lock chamber 7 via the O-ring 62, and the load lock chamber 7 is sealed.

(ト)処理室4側では、ステップS13に戻り、処理室4内が所定圧力まで真空排気された後、被処理基板30a,30b,30cが加熱部により所定温度に保持されて成膜プロセスが行われる。一方、ロードロック室7側では、ステップS21において、ロードロック室7内が大気圧に戻された後、ロードロック室7の蓋6を開け、図示を省略した移載機を用いて被処理基板20a,20b,20cを回収する。ステップS22において、未処理の被処理基板があれば、ステップS14に戻り、移載機を用いて第1の基板載置部14に未処理の被処理基板を載置する。こうして処理室4における成膜処理を順次繰り返し、所定のロット数の成膜処理を行う。   (G) On the processing chamber 4 side, the process returns to step S13, and after the inside of the processing chamber 4 is evacuated to a predetermined pressure, the substrates 30a, 30b, 30c to be processed are held at a predetermined temperature by the heating unit, and the film forming process is performed. Done. On the other hand, on the load lock chamber 7 side, after the inside of the load lock chamber 7 is returned to atmospheric pressure in step S21, the lid 6 of the load lock chamber 7 is opened, and a substrate to be processed is used using a transfer machine (not shown). 20a, 20b, and 20c are collected. If there is an unprocessed substrate to be processed in step S22, the process returns to step S14, and an unprocessed substrate is placed on the first substrate platform 14 using the transfer machine. In this way, the film forming process in the processing chamber 4 is sequentially repeated to perform the film forming process for a predetermined number of lots.

以上説明したように、本発明の実施の形態によれば、搬送部8が高温環境を形成する第1及び第2の加熱部13,23、ダスト環境である処理室4から隔離されるので、ロードロック室と処理室をインラインに配置した場合と比して、搬送系のベアリングのグリス劣化、ダストのかみこみ等の頻度を減少させることができる。よって、搬送駆動のトラブルを回避でき、搬送系の寿命を延ばすことができる。   As described above, according to the embodiment of the present invention, the transport unit 8 is isolated from the first and second heating units 13 and 23 that form a high temperature environment and the processing chamber 4 that is a dust environment. Compared with the case where the load lock chamber and the processing chamber are arranged in-line, the frequency of the grease deterioration of the conveying system bearing and the dust trapping can be reduced. Therefore, troubles in transport driving can be avoided, and the life of the transport system can be extended.

更に、第1及び第2のサセプタ11,21が第1及び第2の加熱部を有しているので、第1及び第2の基板載置部14,24に載置した被処理基板10a,10b,10c,20a,20b,20c,30a,30b,30cを瞬時に加熱することができる。よって、タクトタイムを短縮することができ、生産量を増大させることが可能となる。   Further, since the first and second susceptors 11 and 21 have the first and second heating units, the substrate 10a to be processed placed on the first and second substrate placement units 14 and 24, 10b, 10c, 20a, 20b, 20c, 30a, 30b, and 30c can be heated instantaneously. Therefore, the tact time can be shortened and the production amount can be increased.

(その他の実施の形態)
上記のように、本発明は実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。本発明の実施の形態に係る真空装置は、CVD装置の他にも、例えば、SiO2膜を形成する熱酸化装置、イオン注入装置、不純物拡散装置、PSG膜、BSG膜、BPSG膜等をリフロー(メルト)する熱真空装置、CVD酸化膜等のデンシファイする熱真空装置、シリサイド膜等を形成する熱真空装置、金属配線層を堆積するスパッタリング装置に適用可能である。このように、本発明はここでは記載していない様々な実施の形態等を含むことは勿論である。したがって、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。
(Other embodiments)
As described above, the present invention has been described according to the embodiment. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art. The vacuum apparatus according to the embodiment of the present invention reflows, for example, a thermal oxidation apparatus that forms a SiO 2 film, an ion implantation apparatus, an impurity diffusion apparatus, a PSG film, a BSG film, and a BPSG film in addition to a CVD apparatus. The present invention can be applied to a thermal vacuum apparatus for melting (melting), a thermal vacuum apparatus for densifying a CVD oxide film, a thermal vacuum apparatus for forming a silicide film, and a sputtering apparatus for depositing a metal wiring layer. As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

1…チャンバ
2…回転軸
3…回転体
4…処理室
5…電極
6…蓋
7…ロードロック室
8…搬送部
9…真空ポンプ
10a,10b,10c,10d,10e,10f,10g,10h,10i,20a,20b,20c,20d,20e,20f,20g,20h,20i,30a,30b,30c…被処理基板
11…第1のサセプタ
12…第1の真空仕切板
13…第1の加熱部
14…第1の基板載置部
15…第1のサセプタ支持部
16…第1の昇降部
21…第2のサセプタ
22…第2の真空仕切板
23…第2の加熱部
24…第2の基板載置部
25…第2のサセプタ支持部
26…第2の昇降部
41,61,62…Oリング
DESCRIPTION OF SYMBOLS 1 ... Chamber 2 ... Rotating shaft 3 ... Rotating body 4 ... Processing chamber 5 ... Electrode 6 ... Cover 7 ... Load lock chamber 8 ... Transfer part 9 ... Vacuum pump 10a, 10b, 10c, 10d, 10e, 10f, 10g, 10h, 10i, 20a, 20b, 20c, 20d, 20e, 20f, 20g, 20h, 20i, 30a, 30b, 30c ... Substrate 11 ... First susceptor 12 ... First vacuum partition plate 13 ... First heating section DESCRIPTION OF SYMBOLS 14 ... 1st board | substrate mounting part 15 ... 1st susceptor support part 16 ... 1st raising / lowering part 21 ... 2nd susceptor 22 ... 2nd vacuum partition plate 23 ... 2nd heating part 24 ... 2nd Substrate placing part 25 ... second susceptor support part 26 ... second lifting part 41, 61, 62 ... O-ring

Claims (5)

第1及び第2の凸部を上部に有し、真空排気可能なチャンバと、
複数の被処理基板をそれぞれ載置し加熱する第1及び第2のサセプタを搬送する搬送部とを備え、
前記チャンバの内部において、前記第1の凸部がなす領域の直下を前記第1及び第2のサセプタのいずれかが仕切ることにより閉じた空間を構成し、前記第1の凸部に処理室を定義し、
前記チャンバの内部において、前記第2の凸部がなす領域の直下を、前記第1及び第2のサセプタの他のいずれかが仕切ることにより閉じた空間を構成し、前記第2の凸部にロードロック室を定義し、
前記第1及び第2のサセプタを前記ロードロック室側から前記処理室側に交互に搬送し、前記処理室において前記複数の被処理基板を処理し、該処理後、前記処理室側から前記ロードロック室側に前記第1及び第2のサセプタを交互に搬送することを特徴とする真空装置。
A chamber having first and second protrusions at the top and capable of being evacuated;
A transport unit that transports the first and second susceptors that place and heat the plurality of substrates to be processed, respectively;
Inside the chamber, a space closed by either one of the first and second susceptors is formed immediately below a region formed by the first convex portion, and a processing chamber is formed in the first convex portion. Define
Inside the chamber, a space that is closed by partitioning one of the other of the first and second susceptors directly below the region formed by the second protrusion is formed on the second protrusion. Define a load lock room,
The first and second susceptors are alternately transported from the load lock chamber side to the processing chamber side, the plurality of substrates to be processed are processed in the processing chamber, and after the processing, the load is transferred from the processing chamber side. A vacuum apparatus characterized in that the first and second susceptors are alternately conveyed to the lock chamber side.
前記搬送部が、
前記第1及び第2のサセプタをそれぞれ支持して、前記第1及び第2のサセプタをそれぞれ昇降させる第1及び第2の昇降部と、
前記第1及び第2のサセプタを、前記第1の凸部がなす領域の直下、及び前記第2の凸部がなす領域の直下に、交互に位置するように回転する回転体
とを備えることを特徴とする請求項1に記載の真空装置。
The transport unit is
First and second elevating parts for supporting the first and second susceptors and raising and lowering the first and second susceptors, respectively;
The first and second susceptors are provided with rotating bodies that rotate so as to be alternately positioned immediately below a region formed by the first convex portion and immediately below a region formed by the second convex portion. The vacuum apparatus according to claim 1.
前記第1及び第2の昇降部が、前記第1及び第2のサセプタを同時に昇降させることを特徴とする請求項2に記載の真空装置。   The vacuum apparatus according to claim 2, wherein the first and second elevating parts elevate and lower the first and second susceptors simultaneously. 前記第1及び第2のサセプタが上昇して、前記第1の凸部がなす領域の直下を前記第1及び第2のサセプタのいずれかが仕切り、
前記第2の凸部がなす領域の直下を、前記第1及び第2のサセプタの他のいずれかが仕切ることを特徴とする請求項1〜3のいずれか1項に記載の真空装置。
The first and second susceptors are lifted, and either the first or second susceptor partitions the region immediately below the region formed by the first protrusions;
The vacuum apparatus according to any one of claims 1 to 3, wherein any one of the first and second susceptors partitions a region directly below the second convex portion.
第1及び第2の凸部を上部に有し、真空排気可能なチャンバを有する真空装置に用いられる第1及び第2のサセプタを含むサセプタのセットであって、
前記第1及び第2のサセプタのそれぞれが、
前記チャンバの内部において、前記第1の凸部がなす領域の直下を前記第1及び第2のサセプタのいずれかが仕切ることにより閉じた空間を構成し、前記第1の凸部に処理室を定義し、前記第2の凸部がなす領域の直下を、前記第1及び第2のサセプタの他のいずれかが仕切ることにより閉じた空間を構成し、前記第2の凸部にロードロック室を定義することが可能な真空仕切板と、
前記真空仕切板の周辺部が真空シール部として露出するように、前記真空仕切板より小さな専有面積で、前記真空仕切板の上方に配置され、複数の被処理基板をそれぞれ載置する基板載置部と、
前記基板載置部と前記真空仕切板の間に挟まれ、前記複数の被処理基板をそれぞれ加熱する基板載置部
とを備え、前記第1及び第2のサセプタが、前記ロードロック室側から前記処理室側に交互に搬送され、前記処理室において前記複数の被処理基板が処理され、該処理後、前記処理室側から前記ロードロック室側に前記第1及び第2のサセプタが交互に搬送されることを特徴とするサセプタのセット。
A set of susceptors including first and second susceptors for use in a vacuum apparatus having first and second convex portions on top and having a chamber capable of being evacuated,
Each of the first and second susceptors is
Inside the chamber, a space closed by either one of the first and second susceptors is formed immediately below a region formed by the first convex portion, and a processing chamber is formed in the first convex portion. A space that is defined by partitioning a region immediately below the region formed by the second convex portion by one of the other of the first and second susceptors, and a load-lock chamber formed in the second convex portion. A vacuum partition plate that can be defined, and
Substrate mounting that is arranged above the vacuum partition plate and has a plurality of substrates to be processed, each having a smaller dedicated area than the vacuum partition plate so that the peripheral portion of the vacuum partition plate is exposed as a vacuum seal portion And
A substrate platform that is sandwiched between the substrate platform and the vacuum partition plate and that heats the plurality of substrates to be processed, respectively, and the first and second susceptors are connected to the process from the load lock chamber side. The plurality of substrates to be processed are processed alternately in the processing chamber, and after the processing, the first and second susceptors are alternately transferred from the processing chamber side to the load lock chamber side. A set of susceptors characterized by
JP2009091035A 2009-04-03 2009-04-03 Vacuum apparatus and set of susceptor Withdrawn JP2010242152A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016196680A (en) * 2015-04-03 2016-11-24 トヨタ自動車株式会社 Film deposition method, and film deposition apparatus
CN109612755A (en) * 2018-12-11 2019-04-12 上海空间电源研究所 A kind of strain measurement system and application thereof for space environmental simulation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016196680A (en) * 2015-04-03 2016-11-24 トヨタ自動車株式会社 Film deposition method, and film deposition apparatus
CN109612755A (en) * 2018-12-11 2019-04-12 上海空间电源研究所 A kind of strain measurement system and application thereof for space environmental simulation

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