JP2010239004A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which has a structure capable of preventing the deterioration of a sealing resin containing a fluorescence substance caused by heat and light generated from the semiconductor light emitting device, and is elongated in operating life. <P>SOLUTION: The semiconductor light emitting device 100 includes: a sealing resin 102 containing a fluorescence substance covering the semiconductor light emitting element 101 so as not to make the element contact with each other; a substrate 103 on which the sealing resin 102 and the semiconductor light emitting element 101 are arranged; a spatial layer 105 in which the semiconductor light emitting element 101 is arranged in the sealing resin 102; and a heat discharge opening 106 communicating with the spatial layer 105. Heat radiated from the semiconductor emitting element 101 to the spatial layer 105 is discharged from the heat discharge opening 106 to the outside. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a structure for preventing a sealing resin including a phosphor layer from being deteriorated by heat generated from a semiconductor light emitting element.

  In recent years, semiconductor light emitting devices have been widely used. In this semiconductor light emitting device, for example, as a structure described in Patent Document 1, a technique for preventing deterioration of the sealing resin has been proposed.

  In this conventional semiconductor light emitting device, as shown in FIG. 1, a heat insulating layer 11 is produced around the semiconductor light emitting element 10 with high accuracy by a printing method, and a phosphor layer 12 is provided outside the heat insulating layer. A technique for preventing the heat generation of the semiconductor light emitting element 10 from directly touching the phosphor 110 and improving the temporal deterioration of the phosphor 110 due to the heat generation is disclosed. FIG. 1 is a schematic diagram showing the prior art. In addition, in FIG. 1, since the figure and code | symbol described in the cited reference 1 are used, the code | symbol of the component which is not demonstrated here also exists.

  However, in the conventional semiconductor light emitting device, the heat insulating layer 11 is composed of one or a combination of two or more selected from a silicone resin, an epoxy resin, and a fluororesin, and is composed of an organic substance. It is susceptible to damage such as discoloration and deterioration due to light energy such as ultraviolet rays and heat.

  The mechanism by which the heat insulating layer 11 composed of organic substances deteriorates as described above is that the functional group adjacent to the benzene ring in the resin is moved by electrons due to heat, light, etc., and changes to a quinone component which is a chromophore. It is said that it is a powerful theory that it will change color.

  In particular, the epoxy resin is weak to light energy and heat, and deteriorates due to light and heat emitted when the semiconductor light emitting element 10 is turned on, thereby preventing light emitted from the semiconductor light emitting element 10 and reducing brightness. There is. Further, increasing the current value increases the brightness of light emitted from the semiconductor light emitting element 10, but there is a problem that the amount of heat generated by the semiconductor light emitting element 10 increases and the deterioration of the resin is promoted.

  For these reasons, the heat insulating layer 11 containing an organic substance, particularly an epoxy resin, has deteriorated over time, such as yellowing, and has a problem of hindering the effect of extracting light emitted from the semiconductor light emitting element 10 to the outside.

  Accordingly, the present invention has been made in view of the above-described problems, and the object of the present invention is a structure that prevents the sealing resin containing the phosphor from deteriorating due to heat and light generated from the semiconductor light emitting element. A semiconductor light emitting device having a long life is provided.

  In order to solve the above problem, a semiconductor light emitting device of the present invention includes a semiconductor light emitting element, a sealing resin including a phosphor that covers the semiconductor light emitting element so as not to contact, the sealing resin, and the semiconductor light emitting element. , A space layer formed of the sealing resin, on which the semiconductor light emitting element is disposed, and a heat exhaust port communicating with the space layer.

  According to the present invention, heat generated from the semiconductor light emitting device is released to the outside through the space layer and the heat exhaust port. Thereby, it can prevent that a fluorescent substance layer deteriorates with time, without receiving the heat | fever of a semiconductor light-emitting device directly. As a result, a long-lived semiconductor light emitting device can be realized.

Sectional view showing a conventional semiconductor light emitting device 1 is a perspective view showing a semiconductor light emitting device according to a first embodiment. Sectional drawing of the semiconductor light-emitting device along the III-III line of FIG. Sectional drawing which shows the semiconductor light-emitting device of a modification The perspective view which shows the other semiconductor light-emitting device based on 2nd Embodiment. The perspective view which shows the semiconductor light-emitting device of a modification same as the above The disassembled perspective view which shows the semiconductor light-emitting device concerning 3rd Embodiment. Sectional drawing which shows the semiconductor light-emitting device along the VIII-VIII line of FIG. The disassembled perspective view which shows the other semiconductor light-emitting device based on 4th Embodiment. Sectional drawing which shows the semiconductor light-emitting device along the XX line of FIG.

  A first embodiment will be described. FIG. 2 is a perspective view of the semiconductor light emitting device according to the first embodiment, and FIG. 3 is a cross-sectional view taken along the line III-III of the semiconductor light emitting device of FIG. FIG. 4 shows a modification of the semiconductor light emitting device.

  The semiconductor light emitting device 100 shown in FIGS. 2 and 3 includes a semiconductor light emitting element 101, a phosphor layer 102 that is a sealing resin, and lead electrodes 103a and 103b that are substrates that are electrically connected to the outside. 103 and an insulating material 104 that is an insulator for preventing an electrical short circuit between the lead electrodes 103a and 103b of the electrode-integrated substrate 103.

  The semiconductor light emitting element 101 is electrically connected to the lead electrodes 103 a and 103 b of the electrode integrated substrate 103. The semiconductor light emitting device 101 emits light when an anode voltage and a cathode voltage are applied to the lead electrode 103a (103b). The mounting form of the semiconductor light emitting device 101 is illustrated here as flip chip bonding, but other methods such as wire bonding, solder, conductive adhesive, ACF, NCP, etc. may be used.

  The electrode-integrated substrate 103 uses a base material having excellent mechanical strength, electrical conductivity, thermal conductivity, corrosion resistance, etc., such as Cu-based alloy and Fe-based alloy, and Au, Ag, Sn, Ni plating is applied. The electrode-integrated substrate 103 may have a structure as shown in FIG. 4 and is not limited as long as the connection can be taken out to the outside. In this case, the lead electrodes 103a and 103b can be arbitrarily formed on an insulating substrate 103 ′ formed of an insulating material such as ceramic, and the degree of design freedom can be increased.

  The phosphor layer 102 is made of a transparent resin containing a phosphor, and is disposed so as to cover the semiconductor light emitting element 101. As the transparent resin for forming the phosphor layer 102, an epoxy-based, acrylic-based, silicone-based, or the like is used, and is manufactured by a processing method such as cutting, casting, or molding. The transparent resin is prepared so that the phosphor is dispersed and the concentration becomes substantially uniform.

  In the case where the semiconductor light emitting element 101 uses a blue light emitting element or an ultraviolet light emitting element, white light can be easily realized by using a yellow phosphor. Similarly, white light can be easily realized by using a red phosphor and a green phosphor for the blue diode.

  When white light is required in this way, white light can be easily realized by selecting a phosphor in consideration of the color of the semiconductor light emitting element 101. Further, not only white light but also a suitable color development can be realized by appropriately selecting a semiconductor light emitting element and a phosphor.

  The phosphor layer 102 has a structure in which four legs 107 are formed as shown in FIG. These leg portions 107 extend in the phosphor layer 102 below the four corners here, and are fixed on the electrode integrated substrate 103. Specifically, these four leg portions 107 are fixed on the electrode-integrated substrate 103 with an adhesive or the like (not shown) at the surface contact portion of the electrode-integrated substrate 103.

  After fixing with an adhesive or the like, between the phosphor layer 102 and the electrode integrated substrate 103 in the vertical direction from the surface on which the semiconductor light emitting element 101 is mounted to the opposite surface, and between the legs 107 in the left and right direction. The formed gap constitutes the heat exhaust port 106 of the present embodiment. The phosphor layer 102 has not only a rectangular parallelepiped structure as shown in FIG. 2, but also a dome shape, a conical shape, and an R chamfer structure provided at the corner of the phosphor layer 102 main surface. good.

  The space layer 105 is a space formed between the semiconductor light emitting element 101 and the phosphor layer 102. The phosphor layer 102 is disposed so as to maintain a predetermined separation distance from the semiconductor light emitting element 101 by providing the space layer 105, and is not in contact with the semiconductor light emitting element 101. In other words, the semiconductor light emitting element 101 and the phosphor layer 102 are arranged in a non-contact manner so as to maintain a certain distance.

  The semiconductor light emitting device 100 configured as described above has a structure in which the heat 108 generated from the semiconductor light emitting element 101 is radiated to the space layer 105 and discharged to the outside through the heat exhaust port 106. Therefore, the heat generated from the semiconductor light emitting element 101 does not stagnate in the space layer 105, so that the temperature rise in the phosphor layer 102 can be suppressed, and damage due to deterioration of the phosphor layer 102 due to heat. Can be reduced.

  With the configuration as described above, in the semiconductor light emitting device 100 of the present embodiment, heat generated from the semiconductor light emitting element 101 is released to the outside through the space layer 105 and the exhaust heat port 106. Accordingly, the phosphor layer 102 can suppress deterioration over time such as yellowing due to heat generation from the semiconductor light emitting element 101, and can prevent deterioration of the resin including the phosphor layer 102.

  From the above description, the semiconductor light emitting device 100 of the present embodiment can prevent the phosphor layer 102 from being deteriorated with time without directly receiving heat from the semiconductor light emitting element 101. As a result, the semiconductor light emitting device 100 having a long life can be realized.

  In the semiconductor light emitting device 100, the semiconductor light emitting element 101 and the phosphor layer 102 are disposed in a non-contact manner so that a certain distance is maintained, so that the phosphor layer 102 is in direct contact with the semiconductor light emitting element 101. This makes it less susceptible to the light energy from the semiconductor light emitting element 101 than the above state, and reduces damage due to deterioration of the phosphor layer 102 formed from an organic material, particularly an epoxy resin.

(Second Embodiment)
A second embodiment will be described. The second embodiment shows a modification of the configuration of the heat exhaust port 106. 5 and 6 are perspective views of the semiconductor light emitting device according to the second embodiment. In addition, about the same component as the semiconductor light-emitting device 100 demonstrated in 1st Embodiment, while omitting those description, the same code | symbol may be used.

  As shown in FIG. 5, the semiconductor light emitting device 200 has a configuration in which at least one, that is, a plurality of heat exhaust ports 206 are formed in the phosphor layer 202. The phosphor layer 202 has a lower edge 207 bonded to the electrode integrated substrate 103.

  The plurality of heat exhaust ports 206 pass through the phosphor layer 202, and are a plurality of holes here, which communicate the space layer (105, not shown in FIG. 5) and the external space. The heat generated from the semiconductor light emitting element (101, not shown in FIG. 5) passes through a plurality of heat exhaust ports 206 formed in the phosphor layer 202 and is released to the external space.

  The heat exhaust port 206 is manufactured by a processing method such as cutting or casting as a manufacturing method. The shape, size, position, etc. are not questioned.

  As shown in FIG. 6, the semiconductor light emitting device 200 may have a structure in which a plurality of inverted triangular legs 208 are provided at locations where the phosphor layer 202 abuts on the electrode integrated substrate 103. For example, the lower part of the phosphor layer 202 is processed into a mountain.

  In this case, a gap having a triangular cross section formed between the electrode integrated substrate 103 and the phosphor layer 202 has a function as the heat exhaust port 206a.

  As a method for producing the phosphor layer 202 having such a structure, it is produced by a processing method such as cutting or casting as described above. These leg portions 208 are fixed to the electrode integrated substrate 103 or the insulating material 104 with an adhesive (not shown) or the like.

The semiconductor light emitting device 200 of the present embodiment described above can also be configured to achieve the same effects as those of the first embodiment.
Of course, the shape of the phosphor layer 202 is not limited to a rectangular parallelepiped as shown in FIG.

(Third embodiment)
A third embodiment will be described. FIG. 7 is an exploded perspective view showing the semiconductor light emitting device according to the third embodiment, and FIG. 8 is a cross-sectional view showing the semiconductor light emitting device along the line VIII-VIII in FIG. In the present embodiment, the same components as those of the semiconductor light emitting device 100 described in the first embodiment will not be described and the same reference numerals may be used.

  In the semiconductor light emitting devices 100 and 200 according to the first and second embodiments, the heat exhaust ports 106 and 206 (206a) are made to be the phosphor layers 102 and 202, or the phosphor layers 102 and 202 and the electrode integrated substrate 103. However, the semiconductor light emitting device 300 according to the third embodiment has a configuration in which the heat exhaust port 309 is also provided in the electrode integrated substrate 303 as shown in FIG.

  Specifically, the electrode-integrated substrate 303 is opened in the vertical direction from the surface on which the semiconductor light emitting element 101 is mounted to the opposite surface so as to communicate with the space layer 105 in each of the lead electrodes 303a and 303b. A heat exhaust port 309 which is a hole to be formed is formed.

  As a result, the semiconductor light emitting device 300 of the present embodiment is generated from the semiconductor light emitting element 101 from the two directions of the heat exhaust port 106 provided in the phosphor layer 102 and the heat exhaust port 309 provided in the electrode integrated substrate 303. The heat 308 radiated to the space layer 105 easily escapes to the outside. That is, in the semiconductor light emitting device 300, the heat 308 from the semiconductor light emitting device 100 is formed between the phosphor layer 102 and the electrode integrated substrate 303, and the heat exhaust port 309 formed in the electrode integrated substrate 303. To the outside space. With such a structure, the semiconductor light emitting device 300 can dissipate heat from the semiconductor light emitting element 101 more effectively in addition to the effects of the first embodiment.

  Note that the shape, size, and position of the heat exhaust port 309 provided in the electrode integrated substrate 303 are not particularly limited as long as electricity can be supplied to the semiconductor light emitting element 101.

(Fourth embodiment)
A fourth embodiment will be described. FIG. 9 is an exploded perspective view showing the semiconductor light emitting device according to the fourth embodiment, and FIG. 10 is a cross-sectional view of the semiconductor light emitting device along the line XX in FIG.

  In the present embodiment, the same components as those of the semiconductor light emitting device 300 described in the third embodiment are not described and the same reference numerals may be used.

  In the semiconductor light emitting device 400 according to the present embodiment, a plurality of heat exhaust ports 410 are also provided in the insulating material 404 that is an insulator disposed between the lead electrodes 303a and 303b of the electrode integrated substrate 303 shown in FIG. It is the provided structure.

  The insulating material 404 provided to prevent short-circuit between the lead electrodes 303a and 303b is opened in the vertical direction from the surface on which the semiconductor light emitting element 101 is mounted to the opposite surface so as to communicate with the space layer 105. At least one or more heat exhaust ports 410 serving as holes to be formed are formed.

  That is, the plurality of heat exhaust ports 410 are formed so as to penetrate through the insulating material 404 from the surface on which the semiconductor light emitting element 101 is mounted toward the opposite side. If the insulating material 404 has a function of preventing a short circuit between the lead electrodes 303a and 303b, the shape and size of the heat exhaust port 410 are not limited. The plurality of heat exhaust ports 410 are formed by cutting, casting, or the like.

  In the semiconductor light emitting device 400 of the present embodiment, the heat exhaust port 106 provided in the phosphor layer 102 by the heat 408 generated from the semiconductor light emitting element 101, the heat exhaust port 309 provided in the electrode integrated substrate 303, and the insulating material 404. It is discharged to the external space through a plurality of locations of the heat exhaust port 410 provided in the. That is, the semiconductor light emitting device 400 can dissipate the heat from the semiconductor light emitting element 101 more effectively in addition to the effect of the third embodiment.

  From the above description, the heat 408 generated from the semiconductor light emitting device 101 is released to the external space through the space layer 105 and the heat exhaust ports 106, 309, 410. Therefore, since the heat 408 generated from the semiconductor light emitting element 101 does not stagnate in the space layer 105, the phosphor layer 102 can be prevented from deteriorating with time. Thereby, the semiconductor light emitting device 400 having a long life can be realized as in the above-described embodiments.

  In each of the above embodiments, a light emitting diode is used as the semiconductor light emitting element 101. However, the present invention is not limited to this, and it is needless to say that a laser diode may be used.

  The invention described in each of the above-described embodiments is not limited to the embodiments and modifications, and various modifications can be made without departing from the scope of the invention in the implementation stage. Further, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements.

  For example, even if several constituent requirements are deleted from all the constituent requirements shown in the embodiment, the problem to be solved by the invention can be solved, and the effect described in the effect of the invention can be obtained. A configuration from which this configuration requirement is deleted can be extracted as an invention.

DESCRIPTION OF SYMBOLS 100, 200, 300, 400 ... Semiconductor light-emitting device 101 ... Semiconductor light emitting element 102, 202 ... Phosphor layer 103, 303 ... Electrode integrated substrate 103a, 103b, 303a, 303b ... Lead electrode 104 Insulating substance 105 Spatial layers 106, 206 , 206a, 309, 410 ... Heat exhaust port

JP 2007-194525 A

Claims (6)

A semiconductor light emitting device;
A sealing resin containing a phosphor covering the semiconductor light emitting element so as not to contact;
A substrate on which the sealing resin and the semiconductor light emitting element are disposed;
A space layer formed of the sealing resin and in which the semiconductor light emitting element is disposed;
A heat exhaust port communicating with the space layer;
A semiconductor light emitting device comprising:   The semiconductor light emitting device according to claim 1, wherein at least one heat exhaust port is provided.   The semiconductor light emitting device according to claim 1, wherein the heat exhaust port is provided in the sealing resin.   The semiconductor light emitting device according to claim 3, wherein the heat exhaust port is provided in the substrate.   The semiconductor light emitting device according to claim 4, wherein the heat exhaust port is provided in each of a pair of electrodes of the substrate.   The semiconductor light emitting device according to claim 5, wherein the heat exhaust port is provided in an insulator disposed between the pair of electrodes.

Images