JP2010232485A - Group iii nitride semiconductor light emitting element and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve light emission efficiency and reliability, while improving electrostatic breakdown voltage property in a group III nitride semiconductor light emitting element. <P>SOLUTION: An ESD layer 102 has a three-layer structure of a first ESD layer 110, a second ESD layer 111, and a third ESD layer 112 from the side of an n-type contact layer 101. The first ESD layer 110 is n-GaN, where the Si concentration is 1×10<SP>16</SP>to 5×10<SP>17</SP>/cm<SP>3</SP>, the thickness is 200-1,000 nm, and the pit density is ≤1×10<SP>8</SP>/cm<SP>2</SP>. The second ESD layer 111 is non-dope GaN, where the thickness is 50-200 nm and the pit density is ≥2×10<SP>8</SP>/cm<SP>2</SP>. The third ESD layer 112 is n-GaN, where a characteristic value to be defined by the product of the Si concentration (/cm<SP>3</SP>) and the film thickness (nm) is 0.9×10<SP>20</SP>to 3.6×10<SP>20</SP>(nm/cm<SP>3</SP>). <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  TECHNICAL FIELD The present invention relates to a group III nitride semiconductor light emitting device having an ESD layer and a method for manufacturing the same, and particularly to a group III nitride having improved luminous efficiency and reliability while maintaining good electrostatic withstand voltage characteristics. The present invention relates to a semiconductor light emitting device and a method for manufacturing the same.

  Conventionally, in a group III nitride semiconductor light emitting device, an ESD layer having a structure in which an i-GaN layer and an n-GaN layer are sequentially stacked from the n-type contact layer side is provided between the n-type contact layer and the light-emitting layer. Thus, a technique for improving electrostatic withstand voltage characteristics is known.

For example, in Patent Document 1, the thickness of the i-GaN layer is 150 to 400 nm, the root mean square roughness (RMS) of the i-GaN layer surface is 3 to 12 nm, and the n-GaN layer has an Si concentration (/ cm ³ ). By forming the ESD layer so that the characteristic value defined by the product of the thickness and the film thickness (nm) is 0.9 × 10 ^{20 to} 3.6 × 10 ²⁰ (nm / cm ³ ), the electrostatic withstand voltage characteristics It has been shown that can be improved. Moreover, it is shown that the growth temperature of the i-GaN layer may be 800 to 900 ° C. in order to set the RMS of the i-GaN layer surface to 3 to 12 nm, and the roughness of the i-GaN layer surface is It is shown that it is caused by a pit.

JP2007-180495

  In order to improve the electrostatic withstand voltage characteristic, the i-GaN layer in the ESD layer is desirably as thick as possible. However, since the pit diameter increases as the i-GaN layer is formed thicker, the method of Patent Document 1 causes problems such as a reduction in light emission area and a decrease in light emission efficiency.

  In addition, the layer formed on the pit region of the i-GaN layer has a different thickness and composition from the layer formed on the flat region of the i-GaN layer. Layers having different thicknesses and compositions were formed, causing problems such as an increase in reverse current, current leakage, and a decrease in device reliability.

  Accordingly, an object of the present invention is to provide a group III nitride semiconductor light-emitting device having a structure in which a reduction in luminous efficiency is prevented while improving electrostatic withstand voltage characteristics and a method for manufacturing the same.

A first invention is a group III nitride semiconductor light emitting device having an ESD layer between an n-type contact layer and a light emitting layer, wherein the ESD layer is formed in order from the n-type contact layer side, the first ESD layer and the second ESD layer. The first ESD layer has a structure in which pits of 1 × 10 ⁸ / cm ² or less are formed on the surface on the light emitting layer side, the thickness is 200 to 1000 nm, and the Si concentration is 1 ×. The second ESD layer has a pit of 2 × 10 ⁸ / cm ² or more on the surface on the light emitting layer side, a thickness of 50 to 200 nm, and a carrier concentration of 10 ^{16 to} 5 × 10 ¹⁷ / cm ^3. 5 × 10 ¹⁷ / cm ³ consists of the following GaN, the 3ESD layer, Si concentration (/ cm ³⁾ and thickness characteristic values 0.9 × 10 ^20, which is defined by the product of (nm) to 3.6 III consisting of × 10 ²⁰ (nm / cm ³ ) GaN This is a group nitride semiconductor light emitting device.

Here, the group III nitride semiconductor is a compound semiconductor represented by a general formula Al _x Ga _y In _z N (x + y + z = 1, 0 ≦ x, y, z ≦ 1), and is one of Al, Ga, and In. It includes those in which a part is substituted with other group 13 elements B and Tl, and a part of N is substituted with other group 15 elements P, As, Sb, and Bi. Usually, GaN, AlGaN, InGaN, and AlGaInN that require Ga are shown.

The second ESD layer may be doped with Si or non-doped as long as the carrier concentration is 5 × 10 ¹⁷ / cm ³ or less and the pit density is 2 × 10 ⁸ / cm ² or more.

The first ESD layer may be composed of a plurality of layers. If the average Si concentration is 1 × 10 ^{16 to} 5 × 10 ¹⁷ / cm ³ , it may have a concentration gradient in the thickness direction.

The characteristic values of 3ESD ^{layer, 1.5 × 10 20 ~3.6 × 10} 20 (nm / cm 3) and is more desirable to further desirably is 1.5 × 10 ²⁰ ~3.0 × 10 ²⁰ (nm / cm ³ ). The thickness of the third ESD layer is preferably 25 to 50 nm.

  A second invention is the group III nitride semiconductor light-emitting device according to the first invention, wherein the total thickness of the first ESD layer and the second ESD layer is 300 nm or more.

According to a third invention, in the first invention or the second invention, a GaN layer having a thickness of 50 nm or less and a Si concentration of 1 × 10 ¹⁸ / cm ³ or more is provided between the first ESD layer and the second ESD layer. A Group III nitride semiconductor light-emitting device having a fourth ESD layer.

In a fourth aspect based on the first aspect to the third aspect, the first ESD layer includes a low concentration layer having a Si concentration of 1 × 10 ^{16 to} 1.5 × 10 ¹⁷ / cm ³ and a Si concentration of 1 ×. A Group III nitride semiconductor light-emitting device having a structure in which high-concentration layers of 10 ¹⁸ / cm ³ or more are alternately and repeatedly stacked a plurality of times.

According to a fifth aspect of the present invention, in the method of manufacturing a group III nitride semiconductor light emitting device having an ESD layer between the n-type contact layer and the light emitting layer, the step of forming the ESD layer is performed at a growth temperature of 900 ° C. or higher. A step of forming a first ESD layer made of GaN having a thickness of 200 to 1000 nm and a Si concentration of 1 × 10 ¹⁷ to 1 × 10 ¹⁸ / cm ³ by MOCVD, and a growth temperature of 800 to 950 ° C. on the first ESD layer , thickness 50 to 200 nm, forming a first 2ESD layer consisting of a carrier concentration of 5 × 10 ¹⁷ / cm ³ or less of GaN by the MOCVD method, on the 2ESD layer, Si concentration (/ cm ³⁾ and thickness ( the characteristic value defined by the product of nm) has the steps of forming by ^{0.9 × 10 20 ~3.6 × 10 20} (nm / cm 3) MOCVD method first 3ESD layer made of GaN of We are a manufacturing method of a group III nitride semiconductor light emitting device characterized.

  A sixth invention is a method for producing a Group III nitride semiconductor light-emitting device according to the fifth invention, wherein the growth temperature of the second ESD layer is 800 to 900 ° C.

  A seventh invention is a method for producing a Group III nitride semiconductor light-emitting device according to the fifth or sixth invention, wherein the growth temperature of the first ESD layer is 1000 ° C. or higher.

  When the ESD layer is configured as in the first invention, the light emitting efficiency and reliability can be improved while the electrostatic withstand voltage characteristics are improved, and current leakage can be reduced.

  In addition, as in the second invention, when the total thickness of the first ESD layer and the second ESD layer is 300 nm or more, the electrostatic withstand voltage characteristic can be further improved.

  According to the third and fourth inventions, in addition to the above effects, the forward voltage can be reduced.

  In addition, according to the Group III nitride semiconductor light-emitting device manufacturing method of the fifth to seventh inventions, it is possible to manufacture a light-emitting device having good electrostatic withstand voltage characteristics, high luminous efficiency and reliability, and low current leakage. it can.

FIG. 3 shows a configuration of a light-emitting element 1 of Example 1. FIG. 6 shows a manufacturing process of the light-emitting element 1. The graph which measured reverse direction current. A graph comparing brightness. FIG. 6 shows a configuration of a light-emitting element 2 of Example 2. FIG. 5 shows a configuration of a light-emitting element 3 of Example 3.

  Hereinafter, specific examples of the present invention will be described with reference to the drawings. However, the present invention is not limited to the examples.

  FIG. 1 is a diagram illustrating a configuration of the light-emitting element 1 according to the first embodiment. The light-emitting element 1 includes an n-type contact layer 101 made of a group III nitride semiconductor, an ESD layer 102, an n-type clad layer 103, a light-emitting layer 104 on a sapphire substrate 100 via a buffer layer (not shown) made of AlN. A p-type cladding layer 105 and a p-type contact layer 106 are stacked, a p-electrode 107 is formed on the p-type contact layer 106, and an n-type contact layer exposed by etching a partial region from the p-type contact layer 106 side. In this structure, an n-type layer 108 is formed on 101.

  The surface of the sapphire substrate 100 is subjected to uneven processing in order to improve light extraction efficiency. Besides sapphire, SiC, ZnO, Si, GaN, or the like may be used as the growth substrate.

The n-type contact layer 101 is n-GaN having a Si concentration of 1 × 10 ¹⁸ / cm ³ or more. In order to make good contact with the n-electrode 108, the n-type contact layer 101 may be composed of a plurality of layers having different carrier concentrations.

  The ESD layer 102 has a three-layer structure including a first ESD layer 110, a second ESD layer 111, and a third ESD layer 112 from the n-type contact layer 101 side.

The first ESD layer 110 is n-GaN having a Si concentration of 1 × 10 ^{16 to} 5 × 10 ¹⁷ / cm ³ . The thickness of the first ESD layer 110 is 200 to 1000 nm. A small number of pits are generated on the surface 110a of the first ESD layer 110 due to threading dislocations, but the pit density is 1 × 10 ⁸ / cm ² or less.

The second ESD layer 111 is non-doped GaN. The thickness of the second ESD layer 111 is 50 to 200 nm. Pits are also generated on the surface 111a of the second ESD layer 111, and the pit density is 2 × 10 ⁸ / cm ² or more. Although the 2ESD layer 111 is undoped, carrier density is in the ^{1 × 10 16 ~1 × 10 17} / cm 3 by the residual carriers. The second ESD layer 111 may be doped with Si in a range where the carrier concentration is 5 × 10 ¹⁷ / cm ³ or less.

The third ESD layer 112 is GaN doped with Si, and a characteristic value defined by the product of the Si concentration (/ cm ³ ) and the film thickness (nm) is 0.9 × 10 ^{20 to} 3.6 × 10 ^20. (Nm / cm ³ ). For example, when the thickness of the third ESD layer 112 is 30 nm, the Si concentration is 3.0 × 10 ^{18 to} 1.2 × 10 ¹⁹ / cm ³ .

  The n-type cladding layer 103 has a superlattice structure in which a unit structure in which 4.5-nm-thick InGaN and 2.5-nm i-GaN are sequentially stacked is used as a unit, and this unit structure is repeatedly stacked 15 times.

The light-emitting layer 104 is formed by sequentially stacking Al _0.07 Ga _0.93 N with a thickness of 2.5 nm, InGaN with a thickness of 3.3 nm, i-GaN with a thickness of 0.6 nm, and Al _0.25 Ga _0.75 N with a thickness of 0.6 nm. This unit structure is an MQW structure in which this unit structure is repeatedly stacked 8 times.

  The p-type cladding layer 105 has a structure in which this unit structure is repeatedly layered seven times with a unit in which p-AlGaN having a thickness of 3.5 nm and p-InGaN having a thickness of 1.7 nm are sequentially stacked. Mg is used for the p-type impurity.

  The p-type contact layer 106 is p-GaN doped with Mg. In order to make good contact with the p-electrode, the p-type contact layer 106 may be composed of a plurality of layers having different carrier concentrations.

  In the light emitting element 1, since the ESD layer 102 is configured as described above, good electrostatic withstand voltage characteristics are obtained, light emission efficiency and reliability are improved, and current leakage is reduced. Hereinafter, the reason why the ESD layer 102 is configured as described above will be described.

First, in the ESD layer 102, pits having a density of 2 × 10 ⁸ / cm ² or more are formed in the second ESD layer 111, and the third ESD layer is formed on the second ESD layer 111 in which the pits are formed. As described in Patent Document 1, good electrostatic withstand voltage characteristics can be obtained with such a configuration. However, since the pit diameter depends on the thickness of the second ESD layer 111 and the thickness of the second ESD layer 111 and the pit diameter cannot be controlled independently, the second ESD layer 111 is made thicker for better static. When attempting to obtain the withstand voltage characteristic, the pit diameter is enlarged, the light emitting area is narrowed, the light emitting efficiency is lowered, and the current leakage is increased and the reliability is lowered. That is, in the configuration of the ESD layer of Patent Document 1, there is a trade-off relationship between electrostatic withstand voltage characteristics, current leakage, reliability, and light emission efficiency.

Therefore, the first ESD layer 110 of good quality crystal having a pit density of 1 × 10 ⁸ / cm ² or less is introduced, and the second ESD layer 111 is formed on the first ESD layer 110. By controlling the thickness of the 2 ESD layer 111, the total thickness and the pit diameter of the first ESD layer 110 and the second ESD layer 111 can be controlled independently. Then, the thickness of the second ESD layer 111 is set to 50 to 200 nm so that the pit diameter does not decrease the electrostatic withstand voltage characteristic and the light emission efficiency, and the current leakage does not increase. In order to compensate for this, by setting the thickness of the first ESD layer 110 to 200 to 1000 nm, good electrostatic withstand voltage characteristics can be obtained. Further, the first ESD layer 110 is doped with Si so that the Si concentration is 1 × 10 ^{16 to} 5 × 10 ¹⁷ / cm ^3, and the conductivity of the first ESD layer 110 is adjusted to the conductivity of the second ESD layer 111, so that the forward voltage Prevented the rise.

In order to further improve the electrostatic withstand voltage characteristics, the light emission efficiency, and the reliability, and to reduce the current leakage, it is desirable that the configuration of the ESD layer 102 is as follows. It is desirable that the thickness of the first ESD layer 110 is 300 to 700 nm, the Si concentration is 5 × 10 ^{16 to} 5 × 10 ¹⁷ / cm ³ , and the pit density is 1 × 10 ⁷ / cm ² or less. The second ESD layer 111 preferably has a thickness of 50 to 200 nm and a pit density of 2 × 10 ⁸ to 1 × 10 ¹⁰ / cm ² . The characteristic value of the third ESD layer 112 is preferably 1.5 × 10 ^{20 to} 3.6 × 10 ²⁰ nm / cm ³ and the thickness is preferably 25 to 50 nm.

  Next, a method for manufacturing the light emitting element 1 will be described with reference to FIG.

First, cleaning was performed by heating the sapphire substrate 100 in a hydrogen atmosphere to remove deposits on the surface of the sapphire substrate 10. Thereafter, an n-type contact layer 101 made of GaN was formed on the sapphire substrate 100 via a buffer layer made of AlN (not shown) by MOCVD (FIG. 2A). Hydrogen and nitrogen were used for the carrier gas, ammonia was used for the nitrogen source, TMG (trimethylgallium) was used for the Ga source, and SiH ₄ (silane) was used for the n-type dopant gas.

Next, the ESD layer 102 was formed as follows. First, a first ESD layer 110 made of n-GaN having a thickness of 200 to 1000 nm and a Si concentration of 1 × 10 ^{16 to} 5 × 10 ¹⁷ / cm ³ was formed on the n-type contact layer 101 by MOCVD. Growth temperature was 900 ° C. or higher, the pit density was as high-quality crystal of 1 × 10 ⁸ / cm ² or less is obtained. If the growth temperature is 1000 ° C. or higher, it is desirable to obtain higher quality crystals.

Next, a second ESD layer 111 made of non-doped GaN having a thickness of 50 to 200 nm was formed on the first ESD layer 110 by MOCVD. The growth temperature was set to 800 to 950 ° C., and a crystal having a carrier concentration of 5 × 10 ¹⁷ / cm ³ or less and a pit density of 2 × 10 ⁸ / cm ² or more was obtained. A growth temperature of 800 to 900 ° C. is preferable because the pit density increases.

Then, on the 2ESD layer 111 characteristic value defined by the product of the thickness and Si concentration (/ cm ³⁾ by the MOCVD method (nm) is ^{0.9 × 10 20 ~3.6 × 10 20} (nm ^3rd ESD layer 112 which is n-GaN of / cm < ³ >) was formed. The growth temperature was 800 to 950 ° C. Through the above steps, the ESD layer 102 was formed on the n-type contact layer 101 (FIG. 2B).

Next, an n-type cladding layer 103, a light emitting layer 104, a p-type cladding layer 105, and a p-type contact layer 106 were sequentially stacked on the ESD layer 102 by MOCVD (FIG. 2C). TMA (trimethylaluminum) was used as the Al source, TMI (trimethylindium) was used as the In source, and Cp ₂ Mg (biscyclopentadienylmagnesium) was used as the p-type dopant gas.

  Next, after activating Mg by heat treatment, dry etching was performed from the surface side of the p-type contact layer 106 to form a groove reaching the n-type contact layer 101. Then, a p-electrode 107 made of Rh / Ti / Au (a structure laminated in this order from the p-type contact layer 106 side) is formed on the surface of the p-type contact layer 106, and V is formed on the n-type contact layer 101 exposed at the bottom of the groove by dry etching. An n-electrode 108 made of / Al / Ti / Ni / Ti / Au (structure laminated in this order from the n-type contact layer 101 side) was formed. Thus, the light emitting element 1 shown in FIG. 1 is manufactured.

  FIG. 3 is a graph showing the results of measuring the reverse current of the light emitting element 1. For comparison, a comparative example in which the first ESD layer 110 and the second ESD layer 111 of the ESD layer 102 are replaced with a non-doped GaN layer whose thickness is equal to the total thickness of the first ESD layer 110 and the second ESD layer 111 is used. The reverse current was also measured for the light emitting element. As shown in FIG. 3, it can be seen that the light-emitting element 1 has less reverse current than the light-emitting element of the comparative example, and current leakage is prevented.

  FIG. 4 shows a result of comparing the brightness of the light emitting element 1 and the light emitting element of the comparative example when the driving current is 350 mA. The light-emitting element 1 was about 2% brighter than the light-emitting element of the comparative example, indicating that the light emission efficiency was improved.

FIG. 5 is a diagram illustrating a configuration of the light-emitting element 2 according to the second embodiment. The light-emitting element 2 of Example 2 is provided with an ESD layer 202 in place of the ESD layer 102 of the light-emitting element 1, and the ESD layer 202 includes the first ESD layer 110 and the second ESD layer of the ESD layer 102 of the light-emitting element 1. Between the layer 111, a fourth ESD layer 200 made of GaN having a thickness of 50 nm or less and a Si concentration of 1 × 10 ¹⁸ / cm ³ or more is provided. Other configurations are the same as those of the light-emitting element 1. The growth temperature when the fourth ESD layer 200 is formed may be 950 ° C. or higher, which is the same as when the first ESD layer 110 is formed, or may be 800-900 ° C., which is the same as when the second ESD layer 111 is formed.

  As described above, when the fourth ESD layer 200 is inserted between the first ESD layer 110 and the second ESD layer 11, the electrostatic withstand voltage characteristic, the light emission efficiency, and the reliability are improved as in the light emitting device 1 of the first embodiment. In addition, the forward voltage can be reduced as compared with the light emitting element 1. In particular, the forward voltage during large current driving can be greatly reduced.

The fourth ESD layer 200 is more desirable if the thickness is 25 to 40 nm and the Si concentration is 3 × 10 ^{17 to} 3 × 10 ¹⁸ / cm ³ .

  FIG. 6 is a diagram illustrating the configuration of the light-emitting element 3 of Example 3. In the light-emitting element 3 of Example 3, an ESD layer 302 is provided instead of the ESD layer 202 of the light-emitting element 2, and the first ESD layer 110 in the ESD layer 202 is replaced with a first ESD layer 310 shown below. It is. Other configurations are the same as those of the light-emitting element 2.

The first ESD layer 310 includes a low concentration n-GaN layer having a Si concentration of 1 × 10 ^{16 to} 1.5 × 10 ¹⁷ / cm ^{3 and} a high concentration n − of a Si concentration of 3 × 10 ¹⁷ / cm ³ or more. The GaN layer has a structure in which the GaN layers are alternately and repeatedly stacked a plurality of times. Low concentration n-GaN layer of a thickness of 100 to 200 nm, more preferably if the Si concentration ^{1 × 10 16 ~1.5 × 10 17} / cm 3, a high concentration n-GaN layer is 100 thick More preferably, the thickness is 200 nm and the Si concentration is 3 × 10 ^{17 to} 3 × 10 ¹⁸ / cm ³ .

  When the first ESD layer 310 having the above structure is provided instead of the first ESD layer 110, the electrostatic withstand voltage characteristic, the light emission efficiency, and the reliability can be improved similarly to the light emitting element 1 of the first embodiment. The forward voltage can be reduced as compared with FIG. In particular, the forward voltage during large current driving can be greatly reduced.

  In the ESD layer 302, the second ESD layer 111 may be provided directly on the first ESD layer 310 without providing the fourth ESD layer 200. Similarly, the forward voltage can be reduced as compared with the light emitting element 1. it can.

  The present invention is characterized by the ESD layer provided between the n-type contact layer and the light-emitting layer, and conventionally known various structures can be adopted for other structures. For example, the present invention can also be applied to a light-emitting element having a structure in which a conductive material is used as a substrate or the substrate is removed by laser lift-off, and electrodes are provided on the upper and lower sides to conduct in the vertical direction.

  The group III nitride semiconductor light-emitting device of the present invention can be used for display devices, lighting devices, and the like.

100: sapphire substrate 101: n-type contact layer 102, 202, 302: ESD layer 103: n-type cladding layer 104: light-emitting layer 105: p-type cladding layer 106: p-type contact layer 107: p-type electrode 108: n-type electrode 110: First ESD layer 111: Second ESD layer 112: Third ESD layer 200: Fourth ESD layer

Claims (7)

In a group III nitride semiconductor light emitting device having an ESD layer between an n-type contact layer and a light emitting layer,
The ESD layer has a structure in which a first ESD layer, a second ESD layer, and a third ESD layer are stacked in order from the n-type contact layer side,
The first ESD layer has pits of 1 × 10 ⁸ / cm ² or less formed on the surface on the light emitting layer side, has a thickness of 200 to 1000 nm, and a Si concentration of 1 × 10 ^{16 to} 5 × 10 ¹⁷ / cm ³ . Made of GaN,
The second ESD layer is made of GaN having pits of 2 × 10 ⁸ / cm ² or more formed on the surface on the light emitting layer side, a thickness of 50 to 200 nm, and a carrier concentration of 5 × 10 ¹⁷ / cm ³ or less.
The third ESD layer is made of GaN having a characteristic value defined by a product of Si concentration (/ cm ³ ) and film thickness (nm) of 0.9 × 10 ^{20 to} 3.6 × 10 ²⁰ (nm / cm ³ ). Become,
A group III nitride semiconductor light emitting device characterized by the above.   2. The group III nitride semiconductor light emitting device according to claim 1, wherein a total thickness of the first ESD layer and the second ESD layer is 300 nm or more. Between the first 2ESD layer and the second 1ESD layer is 50nm or less thick, claim 1, wherein the Si concentration and having a first 4ESD layer consisting of 1 × 10 ¹⁸ / cm ³ or more GaN Item 3. The group III nitride semiconductor light-emitting device according to Item 2. In the first ESD layer, a low concentration layer having a Si concentration of 1 × 10 ^{16 to} 1.5 × 10 ¹⁷ / cm ^{3 and} a high concentration layer having a Si concentration of 1 × 10 ¹⁸ / cm ³ or more alternately. The group III nitride semiconductor light-emitting device according to any one of claims 1 to 3, wherein the light-emitting device has a laminated structure. In a method for manufacturing a group III nitride semiconductor light emitting device having an ESD layer between an n-type contact layer and a light emitting layer,
The step of forming the ESD layer includes
At a growth temperature of 900 ° C. or higher, and forming a thickness 200 to 1000 nm, the 1ESD layer made of GaN of Si concentration ^{1 × 10 16 ~5 × 10 17} / cm 3 to the MOCVD method,
Forming a second ESD layer of GaN having a growth temperature of 800 to 950 ° C., a thickness of 50 to 200 nm, and a carrier concentration of 5 × 10 ¹⁷ / cm ³ or less on the first ESD layer by MOCVD;
GaN having a characteristic value defined by the product of Si concentration (/ cm ³ ) and film thickness (nm) on the second ESD layer of 0.9 × 10 ^{20 to} 3.6 × 10 ²⁰ (nm / cm ³ ) Forming a third ESD layer comprising: by MOCVD;
A method for producing a Group III nitride semiconductor light-emitting device, comprising:   The method of manufacturing a group III nitride semiconductor light emitting device according to claim 3, wherein the growth temperature of the second ESD layer is 800 to 900 ° C. The method for manufacturing a group III nitride semiconductor light emitting device according to claim 5 or 6, wherein a growth temperature of the first ESD layer is 1000 ° C or higher.

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