JP2010226609A5 - - Google Patents
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- JP2010226609A5 JP2010226609A5 JP2009073741A JP2009073741A JP2010226609A5 JP 2010226609 A5 JP2010226609 A5 JP 2010226609A5 JP 2009073741 A JP2009073741 A JP 2009073741A JP 2009073741 A JP2009073741 A JP 2009073741A JP 2010226609 A5 JP2010226609 A5 JP 2010226609A5
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- resonator element
- dielectric layer
- arm portion
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- 238000005452 bending Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Description
[適用例1]本適用例に係る振動片は、基部と、前記基部から延長して設けられ、屈曲振動をする腕部と、前記腕部に設けられ、前記腕部より熱伝導率の高い誘電体層と、を備え、前記誘電体層は、前記腕部が屈曲振動をすることによる圧縮応力または引張応力の集中する領域を含んで設けられていることを特徴とする。
Application Example 1 resonator element according to this application example includes a base portion, extend provided et been from the base, an arm portion for the bending vibration, provided we are on the arm portion, the thermal conductivity than the arms and a dielectric layer having high, the dielectric layer, wherein the arm portion is a region where concentration to compressive stress or tensile stress due to the bending vibration provided Nde free.
[適用例2]上記適用例に係る振動片において、前記誘電体層は、前記腕部の前記基部側に設けられ、少なくとも、前記腕部の長さの1/2の領域に設けられていることが好ましい。
Application Example 2 In the resonator element according to the application example described above, the dielectric layer, the al provided on the base side of the arm is, at least, it provided half the area of the length of the arm portion it is preferable to have.
[適用例5]本適用例に係る振動片は、屈曲振動をするそれぞれの方向へ向いて配置された第1面および第2面を有し、前記屈曲振動をする方向と交差する方向に沿って配列された複数の腕部と、前記腕部の各々の前記第1面に形成された下部電極と、前記下部電極と前記第2面とを覆うように形成され、前記腕部より熱伝導率の高い圧電性誘電体層と、前記下部電極を覆う前記圧電性誘電体層に重ねて形成された上部電極と、を備えていることを特徴とする。また、他の態様では、基部と、前記基部から延長して設けられ、屈曲振動をするそれぞれの方向へ向いて配置された第1面および第2面を備えた複数の腕部と、前記複数の腕部の各々の前記第1面に設けられた下部電極と、前記下部電極と前記第2面とに設けられ、前記腕部より熱伝導率の高い圧電性誘電体層と、前記下部電極上の前記圧電性誘電体層に重ねて設けられた上部電極と、を備えていることを特徴とする。
Application Example 5 The resonator element according to this application example has a first surface and a second surface arranged in directions in which bending vibration is performed, and is along a direction intersecting with the direction in which the bending vibration is performed. A plurality of arms arranged in a row, a lower electrode formed on the first surface of each of the arms, and the lower electrode and the second surface. A piezoelectric dielectric layer having a high rate and an upper electrode formed to overlap the piezoelectric dielectric layer covering the lower electrode are provided. In another aspect, a base, a plurality of arms provided with a first surface and a second surface provided extending from the base and facing each direction of bending vibration, the plurality of arms A lower electrode provided on the first surface of each of the arm portions, a piezoelectric dielectric layer provided on the lower electrode and the second surface and having a higher thermal conductivity than the arm portion, and the lower electrode And an upper electrode provided so as to overlap the piezoelectric dielectric layer above.
[適用例6]上記適用例に係る振動片は、前記圧電性誘電体層に積層して設けられた絶縁層を備えていることが好ましい。
Application Example 6 In the resonator element of the application example, it is preferably provided with an insulating layer was found provided by laminating the piezoelectric dielectric layer.
Claims (7)
前記基部から延長して設けられ、屈曲振動をする腕部と、
前記腕部に設けられ、前記腕部より熱伝導率の高い誘電体層と、を備え、
前記誘電体層は、前記腕部が屈曲振動をすることによる圧縮応力または引張応力の集中する領域を含んで設けられていることを特徴とする振動片。 The base,
Are al provided to extend from the base portion, an arm portion for the bending vibration,
The al is provided on the arm portion is provided with a dielectric layer having a high thermal conductivity than said arm portion,
The dielectric layer may resonator element, wherein the arm portion is a region where concentration to compressive stress or tensile stress due to the bending vibration provided Nde free.
前記誘電体層は、前記腕部の前記基部側に設けられ、少なくとも、前記腕部の長さの1/2の領域に設けられていることを特徴とする振動片。 The resonator element according to claim 1,
Said dielectric layer, said al provided on the base side of the arm is, at least, resonator element, characterized in that provided in the half of the region of the length of the arm portion.
前記腕部と前記基部の材料として水晶を用いており、
前記誘電体層は、熱伝導率が10.4Wm-1K-1より大きく、層厚が0.1μm以上であることを特徴とする振動片。 In the resonator element according to claim 1 or 2,
Quartz is used as the material of the arm and the base,
The resonator element according to claim 1, wherein the dielectric layer has a thermal conductivity greater than 10.4 Wm-1K-1, and a layer thickness of 0.1 μm or more.
前記誘電体層は、AlN、ZnO、BNのいずれかを含むことを特徴とする振動片。 The resonator element according to any one of claims 1 to 3,
The resonator element, wherein the dielectric layer includes any one of AlN, ZnO, and BN.
前記基部から延長して設けられ、屈曲振動をするそれぞれの方向へ向いて配置された第1面および第2面を備えた複数の腕部と、
前記複数の腕部の各々の前記第1面に設けられた下部電極と、
前記下部電極と前記第2面とに設けられ、前記腕部より熱伝導率の高い圧電性誘電体層と、
前記下部電極上の前記圧電性誘電体層に重ねて設けられた上部電極と、を備えていることを特徴とする振動片。 The base,
A plurality of arms provided with a first surface and a second surface provided extending from the base and facing each direction of bending vibration ;
A lower electrode provided on the first surface of each of the plurality of arms,
Said et provided with the lower electrode and the second surface is a high thermal conductivity than the arm portion piezoelectric dielectric layer,
Resonator element, characterized in that it comprises a, and provided et the upper electrode overlapping the piezoelectric dielectric layer on the lower electrode.
前記圧電性誘電体層に積層して設けられた絶縁層を備えていることを特徴とする振動片。 The resonator element according to claim 5,
Resonator element, characterized in that it comprises an insulating layer was found provided by laminating the piezoelectric dielectric layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009073741A JP2010226609A (en) | 2009-03-25 | 2009-03-25 | Vibrating piece and vibrator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009073741A JP2010226609A (en) | 2009-03-25 | 2009-03-25 | Vibrating piece and vibrator |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010226609A JP2010226609A (en) | 2010-10-07 |
JP2010226609A5 true JP2010226609A5 (en) | 2012-03-29 |
Family
ID=43043281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009073741A Withdrawn JP2010226609A (en) | 2009-03-25 | 2009-03-25 | Vibrating piece and vibrator |
Country Status (1)
Country | Link |
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JP (1) | JP2010226609A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011004035A (en) | 2009-06-17 | 2011-01-06 | Seiko Epson Corp | Flexural vibration piece, and method for manufacturing flexural vibration piece |
CN102629861A (en) | 2011-02-02 | 2012-08-08 | 精工爱普生株式会社 | Vibrator element, vibrator, oscillator, and electronic apparatus |
JP5685962B2 (en) | 2011-02-02 | 2015-03-18 | セイコーエプソン株式会社 | Vibrating piece, vibrator, oscillator and electronic device |
JP6482169B2 (en) | 2013-07-19 | 2019-03-13 | セイコーエプソン株式会社 | Vibrating piece, vibrator, oscillator, electronic device and moving object |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56136016A (en) * | 1980-03-26 | 1981-10-23 | Seiko Instr & Electronics Ltd | Tuning fork type piezoelectric oscillator |
JPH10173477A (en) * | 1996-12-06 | 1998-06-26 | Riken Corp | Tuning fork piezoelectric oscillator |
JP2001102904A (en) * | 2000-10-16 | 2001-04-13 | Seiko Epson Corp | Crystal vibrator |
JP4042766B2 (en) * | 2001-08-08 | 2008-02-06 | セイコーエプソン株式会社 | Optical device and projector |
JP3972790B2 (en) * | 2001-11-27 | 2007-09-05 | 松下電器産業株式会社 | Thin film micromechanical resonator and thin film micromechanical resonator gyro |
JP4281451B2 (en) * | 2003-07-17 | 2009-06-17 | 株式会社大真空 | Piezoelectric vibrating piece and piezoelectric vibrator |
JP2006086726A (en) * | 2004-09-15 | 2006-03-30 | Seiko Epson Corp | Piezoelectric vibration chip, piezoelectric device and method of manufacturing the same |
JP4715652B2 (en) * | 2006-06-30 | 2011-07-06 | セイコーエプソン株式会社 | Piezoelectric vibrating piece |
JP2008051999A (en) * | 2006-08-24 | 2008-03-06 | Seiko Epson Corp | Manufacturing method of optical element and projector |
JP5067033B2 (en) * | 2007-06-20 | 2012-11-07 | セイコーエプソン株式会社 | Tuning fork type oscillator, oscillator |
JP2009027097A (en) * | 2007-07-23 | 2009-02-05 | Sumitomo Electric Ind Ltd | Insulating coil, and manufacturing method of insulating coil |
JP2009036917A (en) * | 2007-07-31 | 2009-02-19 | Sharp Corp | Liquid crystal display device |
JP2009059821A (en) * | 2007-08-30 | 2009-03-19 | Toyota Motor Corp | Semiconductor device |
JP4918663B2 (en) * | 2008-09-12 | 2012-04-18 | 株式会社東芝 | Circuit board manufacturing method |
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2009
- 2009-03-25 JP JP2009073741A patent/JP2010226609A/en not_active Withdrawn
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