JP2010226098A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device Download PDF

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Publication number
JP2010226098A
JP2010226098A JP2010037838A JP2010037838A JP2010226098A JP 2010226098 A JP2010226098 A JP 2010226098A JP 2010037838 A JP2010037838 A JP 2010037838A JP 2010037838 A JP2010037838 A JP 2010037838A JP 2010226098 A JP2010226098 A JP 2010226098A
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JP
Japan
Prior art keywords
semiconductor chip
bumps
adhesive film
insulating resin
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010037838A
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Japanese (ja)
Other versions
JP4984099B2 (en
Inventor
Kazunori Hamazaki
和典 濱崎
孝 ▲松▼村
Takashi Matsumura
Daisuke Sato
大祐 佐藤
Yasuhiro Suga
保博 須賀
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Dexerials Corp
Original Assignee
Sony Chemical and Information Device Corp
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Publication date
Application filed by Sony Chemical and Information Device Corp filed Critical Sony Chemical and Information Device Corp
Priority to JP2010037838A priority Critical patent/JP4984099B2/en
Publication of JP2010226098A publication Critical patent/JP2010226098A/en
Application granted granted Critical
Publication of JP4984099B2 publication Critical patent/JP4984099B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of producing a semiconductor device in which a semiconductor chip is flip-chip mounted on a board with a non-conductive resin film (NCF), wherein the method prevents the NCF from protruding at the time of hot pressing, prevents non-conductive resin and inorganic filler from entering the space between the bumps and the electrode pads, and wherein the acquired semiconductor device exhibits sufficient moisture/reflow resistance. <P>SOLUTION: The NCF has a size equivalent to 60 to 100% of the area of a region enclosed by a plurality of bumps 1 that are arranged at the periphery of the semiconductor chip 2 and has a minimum melt viscosity of 2×10<SP>2</SP>to 1×10<SP>5</SP>Pas. The NCF is temporarily bonded to a region enclosed by a plurality of electrodes 11 of the board 12 which correspond to the bumps 1. Next, the semiconductor chip 2 and the board 12 are positioned so that the bumps 1 and the corresponding electrodes 11 may face each other, and are hot pressed from the semiconductor chip 2 side. This causes the bumps 1 and the electrodes 11 to metallically bond, and melts and further thermally hardens the NCF. Consequently, a semiconductor device is acquired. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、ペリフェラル配置の複数のバンプを有する半導体チップを、絶縁性樹脂接着フィルムを介して基板にフリップチップ実装して半導体装置を取得する半導体装置の製造方法に関する。   The present invention relates to a method of manufacturing a semiconductor device in which a semiconductor chip having a plurality of peripherally arranged bumps is flip-chip mounted on a substrate via an insulating resin adhesive film to obtain a semiconductor device.

半導体チップを、導電粒子を含有する異方性導電接着フィルム（ＡＣＦ）を用いて基板にフリップチップ実装して半導体装置を製造することが広く行われているが、配線ピッチのファイン化が進み、導電粒子の粒径と配線ピッチとの関係で、接続信頼性を確保することが困難になってきている。   Semiconductor devices are widely manufactured by flip-chip mounting a semiconductor chip on a substrate using an anisotropic conductive adhesive film (ACF) containing conductive particles. Due to the relationship between the particle size of the conductive particles and the wiring pitch, it has become difficult to ensure connection reliability.

このため、微細に作成可能な金スタッドバンプを半導体チップに設け、その半導体チップを、絶縁性樹脂接着フィルムを介して基板にフリップチップ実装することが行われるようになっている（特許文献１）。このような絶縁性樹脂接着フィルムを介してフリップチップ実装する場合、一般に、半導体チップと略同一の面積からわずかに大きな面積の絶縁性樹脂接着フィルムを基板に仮貼りした後、半導体チップと配線基板とを位置合わせし、半導体チップ側から熱プレスすることにより実装している。   For this reason, gold stud bumps that can be finely formed are provided on a semiconductor chip, and the semiconductor chip is flip-chip mounted on a substrate via an insulating resin adhesive film (Patent Document 1). . When flip-chip mounting is performed through such an insulating resin adhesive film, generally, an insulating resin adhesive film having a slightly larger area than a semiconductor chip is temporarily attached to the substrate, and then the semiconductor chip and the wiring board are mounted. And are mounted by hot pressing from the semiconductor chip side.

特開２００８−２０３４８４号公報JP 2008-203484 A

しかしながら、特許文献１のようにフリップチップ実装した場合、図５に示すように、バンプ１００を備えた半導体チップ１０１の外縁から、溶融した絶縁性樹脂接着フィルム（ＮＣＦ）１０２がはみ出し、はみ出した樹脂が熱プレスボンダー１０３に付着し、熱プレスの際に圧力過大となり、意図した品質の半導体装置が得られない場合があるという問題があった。また、熱プレス後に、基板１０４の電極１０５と半導体チップ１０１のバンプ１００との間から、絶縁性樹脂や無機フィラーを排除しきれないために、それらの間に満足の行く金属結合が形成できず、接続信頼性が大きく低下する場合があるという問題もあった。更に、吸湿リフロー後に、絶縁性樹脂接着フィルム１０２が外界に露出しているために、硬化不良や半導体チップ１０１の浮きの問題が生じ、この点からも接続信頼性が低下する場合があるという問題もあった。   However, when flip-chip mounting is performed as in Patent Document 1, as shown in FIG. 5, the melted insulating resin adhesive film (NCF) 102 protrudes from the outer edge of the semiconductor chip 101 including the bumps 100 and protrudes from the resin. Adheres to the hot press bonder 103 and the pressure becomes excessive during the hot pressing, and there is a problem that a semiconductor device of the intended quality may not be obtained. In addition, since the insulating resin and the inorganic filler cannot be completely excluded from between the electrode 105 of the substrate 104 and the bump 100 of the semiconductor chip 101 after hot pressing, a satisfactory metal bond cannot be formed between them. There is also a problem that connection reliability may be greatly reduced. Further, since the insulating resin adhesive film 102 is exposed to the outside after moisture absorption reflow, problems such as poor curing and floating of the semiconductor chip 101 occur, and the connection reliability may be lowered from this point as well. There was also.

本発明は、以上の従来の技術の課題を解決しようとするものであり、半導体チップと基板に絶縁性樹脂接着フィルムを使用してフリップチップ実装する半導体装置の製造方法において、熱プレスの際に、溶融した絶縁性樹脂接着フィルムのはみ出しと、バンプと電極パッドとの間に絶縁性樹脂や無機フィラーが介在することを防ぎ、得られる半導体装置が十分な耐吸湿リフロー性を示す製造方法を提供することを目的とする。   The present invention is intended to solve the above-described problems of the prior art, and in a method of manufacturing a semiconductor device in which a semiconductor chip and a substrate are flip-chip mounted using an insulating resin adhesive film, the heat pressing is performed. Providing a manufacturing method that prevents protrusion of molten insulating resin adhesive film and interposition of insulating resin and inorganic filler between bumps and electrode pads, and the resulting semiconductor device exhibits sufficient moisture absorption reflow resistance The purpose is to do.

本発明者は、半導体チップのペリフェラル配置された複数のバンプで囲まれた領域の面積に対する絶縁性樹脂接着フィルムの面積と絶縁性樹脂接着フィルムの最低溶融粘度とをそれぞれ特定範囲に設定することにより、上述の目的を達成できることを見出し、本発明を完成させるに至った。   The inventor sets the area of the insulating resin adhesive film and the minimum melt viscosity of the insulating resin adhesive film with respect to the area of the region surrounded by the plurality of bumps arranged on the periphery of the semiconductor chip to a specific range, respectively. The inventors have found that the above object can be achieved, and have completed the present invention.

即ち、本発明は、ペリフェラル配置の複数のバンプを有する半導体チップを、該バンプに対応した複数の電極を有する基板に、絶縁性樹脂接着フィルムを介してフリップチップ実装することにより半導体装置を製造する方法において、
半導体チップのペリフェラル配置された複数のバンプで囲まれた領域の面積の６０〜１００％に相当する大きさと、２×１０２〜１×１０５Ｐａ・ｓの最低溶融粘度とを有する絶縁性樹脂接着フィルムを、該バンプに対応した基板の複数の電極で囲まれた領域に仮貼りし、該バンプとそれに対応する電極とが対向するように、半導体チップと基板とを位置合わせし、半導体チップ側から熱プレスすることにより、バンプと電極とを金属結合させ、絶縁性樹脂接着フィルムを溶融させ、更に熱硬化させることを特徴とする製造方法を提供する。 That is, the present invention manufactures a semiconductor device by flip-chip mounting a semiconductor chip having a plurality of peripherally arranged bumps on a substrate having a plurality of electrodes corresponding to the bumps via an insulating resin adhesive film. In the method
Insulating resin having a size corresponding to 60 to 100% of an area of a semiconductor chip surrounded by peripheral bumps and a minimum melt viscosity of 2 × 10 2 to 1 × 10 5 Pa · s An adhesive film is temporarily attached to a region surrounded by a plurality of electrodes on the substrate corresponding to the bump, and the semiconductor chip and the substrate are aligned so that the bump and the corresponding electrode face each other. Provided is a manufacturing method characterized in that bumps and electrodes are metal-bonded by hot pressing from the side, and the insulating resin adhesive film is melted and further thermally cured.

本発明の半導体装置の製造方法においては、半導体チップのペリフェラル配置された複数のバンプで囲まれた領域の面積の少なくとも６０〜１００％に相当する大きさと、２×１０２〜１×１０５Ｐａ・ｓの最低溶融粘度とを有する絶縁性樹脂接着フィルムを、半導体チップの複数のバンプに対応する基板の複数の電極に囲まれた領域に仮貼りする。従って、半導体チップを基板に熱プレスした直後は、半導体チップのバンプとそれに対応した基板の電極パッドとの間には絶縁性樹脂接着フィルムが存在せず、また、半導体チップの外側に溶融した絶縁性樹脂接着フィルムがはみ出さないようにすることができる。更に、熱プレスの際、比較的低い圧力で行うことが可能となる。従って、すべてのバンプを対応する接続パッドに十分に金属結合させることができ、熱プレスボンダーへの溶融した樹脂の付着も防止できる。また、前述したように、熱プレス後に、樹脂のはみ出しを生じさせることなく、半導体チップのバンプと基板の電極との接合部を封止でき、耐吸湿リフロー性を向上させることが可能となる。よって、高い接続信頼性の半導体装置を得ることができる。 In the method of manufacturing a semiconductor device according to the present invention, a size corresponding to at least 60 to 100% of the area of a semiconductor chip surrounded by a plurality of peripherally arranged bumps and 2 × 10 2 to 1 × 10 5 Pa. An insulating resin adhesive film having a minimum melt viscosity of s is temporarily attached to a region surrounded by a plurality of electrodes of a substrate corresponding to a plurality of bumps of a semiconductor chip. Therefore, immediately after the semiconductor chip is hot-pressed on the substrate, there is no insulating resin adhesive film between the bumps of the semiconductor chip and the corresponding electrode pads of the substrate, and the insulation melted outside the semiconductor chip. The adhesive resin adhesive film can be prevented from protruding. Furthermore, it is possible to perform at a relatively low pressure during hot pressing. Accordingly, all the bumps can be sufficiently metal-bonded to the corresponding connection pads, and adhesion of the molten resin to the hot press bonder can be prevented. Further, as described above, after hot pressing, the junction between the bump of the semiconductor chip and the electrode of the substrate can be sealed without causing the resin to protrude, and the moisture absorption reflow resistance can be improved. Therefore, a semiconductor device with high connection reliability can be obtained.

バンプを備えた半導体チップの断面図である。It is sectional drawing of the semiconductor chip provided with bump. 半導体チップのバンプ側平面図である。It is a bump side top view of a semiconductor chip. 電極を備えた基板の断面図である。It is sectional drawing of the board | substrate provided with the electrode. 絶縁性樹脂接着フィルムを仮貼りした基板の断面図である。It is sectional drawing of the board | substrate which temporarily bonded the insulating resin adhesive film. 絶縁性樹脂接着フィルムを仮貼りした基板の絶縁性樹脂接着フィルム側平面図である。It is an insulating resin adhesive film side top view of the board | substrate which affixed the insulating resin adhesive film temporarily. 基板に半導体チップを熱プレスボンダーで熱プレス直後の説明図である。It is explanatory drawing immediately after heat-pressing a semiconductor chip to a board | substrate with a hot-press bonder. 基板に半導体チップを熱プレスボンダーで十分に熱プレスした後の説明図である。It is explanatory drawing after fully heat-pressing the semiconductor chip to a board | substrate with the hot press bonder. 従来技術のフリップチップ実装の説明図である。It is explanatory drawing of the flip chip mounting of a prior art.

本発明の半導体装置の製造方法を図面を参照しながら説明する。   A method for manufacturing a semiconductor device of the present invention will be described with reference to the drawings.

（１） まず、バンプ１を備えた半導体チップ２（図１Ａ）と、電極１１を備えた基板１２（図２）と、絶縁性樹脂接着フィルム（ＮＣＦ）とを用意する。 (1) First, a semiconductor chip 2 provided with bumps 1 (FIG. 1A), a substrate 12 provided with electrodes 11 (FIG. 2), and an insulating resin adhesive film (NCF) are prepared.

半導体チップ２において、バンプ１は半導体チップ２の外周縁近くにペリフェラル配置、即ち、一列のバンプ列として配置されている（図１Ｂ）。図１Ｂでは、一列のバンプ列であるが、二列以上のバンプ列であってもよい。   In the semiconductor chip 2, the bumps 1 are arranged near the outer periphery of the semiconductor chip 2 as a peripheral arrangement, that is, as a single row of bumps (FIG. 1B). In FIG. 1B, although it is one row of bumps, it may be two or more rows of bumps.

半導体チップ２やバンプ１としては特に制限はないが、バンプ１については、ファインピッチ化に高度に対応できる点から、金スタッドバンプを好ましく利用することができる。このような金スタッドバンプの大きさに関し、その高さは、好ましくは３５〜１００μｍ、より好ましくは３５〜７０μｍ、特に好ましくは３５〜４５μｍである。また、その底径は、好ましくは１０〜５０μｍ、より好ましくは１０〜４０μｍ、特に好ましくは１０〜２０μｍである。また、バンプ間ピッチは、好ましくは５０〜２００μｍ、より好ましくは５０〜７０μｍである。   Although there is no restriction | limiting in particular as the semiconductor chip 2 and the bump 1, About the bump 1, the point which can respond | correspond highly to fine pitch can use a gold stud bump preferably. Regarding the size of such gold stud bumps, the height is preferably 35 to 100 μm, more preferably 35 to 70 μm, and particularly preferably 35 to 45 μm. The bottom diameter is preferably 10 to 50 μm, more preferably 10 to 40 μm, and particularly preferably 10 to 20 μm. Moreover, the pitch between bumps is preferably 50 to 200 μm, more preferably 50 to 70 μm.

半導体チップ２の外周縁とバンプ１との距離は、溶融した絶縁性樹脂のはみ出しを防ぐために、好ましくは０．０７〜０．２ｍｍ、より好ましくは０．１〜０．１５ｍｍに設定する。   The distance between the outer peripheral edge of the semiconductor chip 2 and the bump 1 is preferably set to 0.07 to 0.2 mm, more preferably 0.1 to 0.15 mm in order to prevent the molten insulating resin from protruding.

基板１２において、電極１１は、接続すべき半導体チップ２のバンプ１（バンプ列）に対応するように配置される。そして、この複数の電極に囲まれた領域に絶縁性樹脂接着フィルム（ＮＣＦ）が仮貼りされる。   In the substrate 12, the electrode 11 is arranged so as to correspond to the bump 1 (bump row) of the semiconductor chip 2 to be connected. Then, an insulating resin adhesive film (NCF) is temporarily attached to a region surrounded by the plurality of electrodes.

基板１２や電極１１としては、特に限定されず、例えば基板１２としては、リジッド基板、フレキシブル基板、リジッドフレキシブル基板などを使用することができる。電極１１としては、例えば、銅箔をランド状に成形し、表面にＮｉ／Ａｕメッキしたものを使用することができる。   The substrate 12 and the electrode 11 are not particularly limited, and for example, a rigid substrate, a flexible substrate, a rigid flexible substrate, or the like can be used as the substrate 12. As the electrode 11, for example, a copper foil formed into a land shape and Ni / Au plated on the surface can be used.

絶縁性樹脂接着フィルム（ＮＣＦ）としては、半導体チップを基板に実装する際に使用される公知の絶縁性樹脂接着フィルムを使用することができ、例えば、エポキシ系硬化型樹脂組成物やアクリル系硬化型樹脂組成物をフィルム状に成形したものが挙げられる。これらは、熱硬化型のものを好ましく使用することができる。   As the insulating resin adhesive film (NCF), a known insulating resin adhesive film used when mounting a semiconductor chip on a substrate can be used. For example, an epoxy curable resin composition or an acrylic curable resin can be used. What formed the type | mold resin composition into the film form is mentioned. These are preferably thermosetting types.

エポキシ系熱硬化型樹脂組成物は、例えば、分子内に２つ以上のエポキシ基を有する化合物もしくは樹脂、エポキシ硬化剤、成膜成分等から構成される。   The epoxy thermosetting resin composition includes, for example, a compound or resin having two or more epoxy groups in the molecule, an epoxy curing agent, a film forming component, and the like.

分子内に２つ以上のエポキシ基を有する化合物もしくは樹脂としては、液状であっても、固体状であってもよく、ビスフェノールＡ型エポキシ樹脂やビスフェノールＦ型エポキシ樹脂などの二官能エポキシ樹脂、フェノールノボラック型エポキシ樹脂やクレゾールノボラック型エポキシ樹脂などのノボラック型エポキシ樹脂などを例示できる。また、３，４−エポキシシクロヘキセニルメチル−３´，４´−エポキシシクロヘキセンカルボキシレート等の脂環式エポキシ化合物も使用することができる。   The compound or resin having two or more epoxy groups in the molecule may be liquid or solid, bifunctional epoxy resin such as bisphenol A type epoxy resin or bisphenol F type epoxy resin, phenol, etc. Examples thereof include novolac type epoxy resins such as novolac type epoxy resins and cresol novolac type epoxy resins. In addition, alicyclic epoxy compounds such as 3,4-epoxycyclohexenylmethyl-3 ′, 4′-epoxycyclohexenecarboxylate can also be used.

エポキシ硬化剤としては、例えば、アミン系硬化剤、イミダゾール系硬化剤、酸無水物系硬化剤、スルホニウムカチオン系硬化剤等が挙げられる。硬化剤は潜在性であってもよい。   Examples of the epoxy curing agent include an amine curing agent, an imidazole curing agent, an acid anhydride curing agent, and a sulfonium cation curing agent. The curing agent may be latent.

成膜成分としては、例えば、エポキシ化合物やエポキシ樹脂と相溶するフェノキシ樹脂やアクリル樹脂を挙げることができる。   Examples of the film forming component include phenoxy resins and acrylic resins that are compatible with epoxy compounds and epoxy resins.

エポキシ系熱硬化型樹脂組成物は、必要に応じて公知の硬化促進剤、シランカップリング剤、金属捕捉剤、ブタジエンゴム等の応力緩和剤、シリカなどの無機フィラー、ポリイソシアネート系架橋剤、着色料、防腐剤、溶剤等を含有することができる。   The epoxy thermosetting resin composition is a known curing accelerator, silane coupling agent, metal scavenger, stress relaxation agent such as butadiene rubber, inorganic filler such as silica, polyisocyanate crosslinking agent, coloring as necessary. May contain additives, preservatives, solvents, and the like.

アクリル系熱硬化型樹脂組成物は、例えば、（メタ）アクリレートモノマー、成膜用樹脂、シリカなどの無機フィラー、シランカップリング剤、ラジカル重合開始剤等から構成される。   The acrylic thermosetting resin composition includes, for example, a (meth) acrylate monomer, a film-forming resin, an inorganic filler such as silica, a silane coupling agent, a radical polymerization initiator, and the like.

（メタ）アクリレートモノマーとしては、単官能（メタ）アクリレートモノマー、多官能（メタ）アクリレートモノマー、あるいはそれらにエポキシ基、ウレタン基、アミノ基、エチレンオキサイド基、プロピレンオキサイド基等を導入した変性単官能または多官能（メタ）アクリレートモノマーを使用することができる。また、本発明の効果を損なわない限り、（メタ）アクリレートモノマーとラジカル共重合可能な他のモノマー、例えば（メタ）アクリル酸、酢酸ビニル、スチレン、塩化ビニル等を併用することができる。   As the (meth) acrylate monomer, a monofunctional (meth) acrylate monomer, a polyfunctional (meth) acrylate monomer, or a modified monofunctional in which an epoxy group, a urethane group, an amino group, an ethylene oxide group, a propylene oxide group, or the like is introduced. Or a polyfunctional (meth) acrylate monomer can be used. Further, other monomers capable of radical copolymerization with the (meth) acrylate monomer, for example, (meth) acrylic acid, vinyl acetate, styrene, vinyl chloride and the like can be used in combination as long as the effects of the present invention are not impaired.

アクリル系熱硬化型樹脂組成物用の成膜用樹脂としては、フェノキシ樹脂、ポリビニルアセタール樹脂、ポリビニルブチラール樹脂、アルキル化セルロース樹脂、ポリエステル樹脂、アクリル樹脂、スチレン樹脂、ウレタン樹脂、ポリエチレンテレフタレート樹脂等が挙げられる。   Examples of the film-forming resin for the acrylic thermosetting resin composition include phenoxy resin, polyvinyl acetal resin, polyvinyl butyral resin, alkylated cellulose resin, polyester resin, acrylic resin, styrene resin, urethane resin, and polyethylene terephthalate resin. Can be mentioned.

ラジカル重合開始剤としては、ベンゾイルパーオキサイド、ジクミルパーオキサイド、ジブチルパーオキサイド等の有機過酸化物、アゾビスイソブチロニトリル、アゾビスバレロニトリル等のアゾビス系化合物を挙げることができる。   Examples of the radical polymerization initiator include organic peroxides such as benzoyl peroxide, dicumyl peroxide, and dibutyl peroxide, and azobis compounds such as azobisisobutyronitrile and azobisvaleronitrile.

アクリル系熱硬化型樹脂組成物は、必要に応じ、ブタジエンゴム等の応力緩和剤や、酢酸エチル等の溶剤、着色料、酸化防止剤、老化防止剤等を含有することができる。   The acrylic thermosetting resin composition can contain a stress relaxation agent such as butadiene rubber, a solvent such as ethyl acetate, a colorant, an antioxidant, an antioxidant, and the like, if necessary.

これらのエポキシ系熱硬化型樹脂組成物やアクリル系熱硬化型樹脂組成物から絶縁性樹脂接着フィルム（ＮＣＦ）への成形は、公知の手法を使用して行うことができる。   Molding of these epoxy thermosetting resin compositions and acrylic thermosetting resin compositions into insulating resin adhesive films (NCF) can be performed using known methods.

以上説明した本発明で使用する絶縁性樹脂接着フィルム（ＮＣＦ）については、その最低溶融粘度を２×１０２〜１×１０５Ｐａ・ｓ、好ましくは５×１０２〜５×１０４Ｐａ・ｓに設定する必要がある。この範囲よりも低粘度となると、はみ出しが生ずる可能性が増加し、高粘度となるとバンプと電極との接合部を封止できなくなる可能性が増加するからである。 The insulating resin adhesive film (NCF) used in the present invention described above has a minimum melt viscosity of 2 × 10 2 to 1 × 10 5 Pa · s, preferably 5 × 10 2 to 5 × 10 4 Pa · s. s must be set. This is because if the viscosity is lower than this range, the possibility of the protrusion increases, and if the viscosity is high, the possibility that the joint between the bump and the electrode cannot be sealed increases.

また、絶縁性樹脂接着フィルム（ＮＣＦ）の厚みは、薄すぎると取り扱い性が低下し、アンダーフィルの機能も果たせなくなり、厚すぎると熱プレスの際のはみ出しが生ずるので、好ましくは３０〜７０μｍ、より好ましくは３５〜５０μｍである。   Further, if the thickness of the insulating resin adhesive film (NCF) is too thin, the handleability is deteriorated and the underfill function cannot be performed. If the thickness is too thick, the protrusion during hot pressing occurs, preferably 30 to 70 μm, More preferably, it is 35-50 micrometers.

（２） 次に、基板１２に、２×１０２〜１×１０５Ｐａ・ｓの最低溶融粘度を有する絶縁性樹脂接着フィルム（ＮＣＦ）を仮貼りする（図３Ａ）。この仮貼りの位置は、半導体チップ２のペリフェラル配置の複数のバンプ１で囲われた領域Ｒの内側に対応する位置である（図３Ｂ）。 (2) Next, an insulating resin adhesive film (NCF) having a minimum melt viscosity of 2 × 10 2 to 1 × 10 5 Pa · s is temporarily attached to the substrate 12 (FIG. 3A). This temporarily pasting position corresponds to the inside of the region R surrounded by the plurality of bumps 1 in the peripheral arrangement of the semiconductor chip 2 (FIG. 3B).

ここで、絶縁性樹脂接着フィルム（ＮＣＦ）の大きさは、半導体チップ２のペリフェラル配置されたバンプ１で囲まれた領域Ｒの面積の６０〜１００％、好ましくは７０〜９０％に相当する大きさである。６０％未満となると、半導体チップのバンプと基板の電極との接合部を封止できなくなる可能性が増大し、１００％を超えるとバンプと電極との間に排除しきれない絶縁性樹脂や無機フィラーが残存するおそれがあり、しかも、熱プレス条件を低下させることができない。   Here, the size of the insulating resin adhesive film (NCF) corresponds to 60 to 100%, preferably 70 to 90%, of the area R of the semiconductor chip 2 surrounded by the peripherally arranged bumps 1. That's it. If it is less than 60%, the possibility that the joint between the bump of the semiconductor chip and the electrode of the substrate cannot be sealed increases, and if it exceeds 100%, an insulating resin or inorganic that cannot be completely excluded between the bump and the electrode. There is a possibility that the filler remains, and the hot press conditions cannot be lowered.

仮貼りの条件としては、絶縁性樹脂接着フィルムが実質的に硬化しないような条件で行うことが好ましく、具体的には、温度６０〜７０℃、圧力０．２５〜１．０ＭＰａ、１〜３秒という条件を挙げることができる。   The temporary bonding is preferably performed under conditions such that the insulating resin adhesive film is not substantially cured. Specifically, the temperature is 60 to 70 ° C., the pressure is 0.25 to 1.0 MPa, and 1 to 3. The second condition can be mentioned.

（３） 次に、バンプ１とそれに対応する電極１１とが対向するように、半導体チップ２と基板１２とを位置合わせし、半導体チップ２側から、熱プレスボンダー３０で熱プレスする（図４Ａ）。この場合、まず、バンプ１と電極１１とが、絶縁性樹脂接着フィルムを介さずに直接接触するので、両者の間に金属結合を形成させる。絶縁性樹脂接着フィルムについては、溶融させ、更に熱硬化させる。これにより、半導体装置を得ることができる。この熱プレスの際、溶融した絶縁性樹脂接着フィルムは、半導体チップ２の外縁に向かって拡がり、更に硬化する。硬化した絶縁性樹脂接着フィルムの周縁は、ペリフェラル配置の複数のバンプ１で囲まれた領域内のみに存在してもよいが、図４Ｂに示すように、ペリフェラル配置の複数のバンプ１と半導体チップ２の外縁との間に存在することが、バンプ１と電極１１との接合部を封止できる点で好ましい。 (3) Next, the semiconductor chip 2 and the substrate 12 are aligned so that the bumps 1 and the corresponding electrodes 11 face each other, and are hot-pressed by the hot press bonder 30 from the semiconductor chip 2 side (FIG. 4A). ). In this case, first, since the bump 1 and the electrode 11 are in direct contact with each other without an insulating resin adhesive film, a metal bond is formed between them. The insulating resin adhesive film is melted and further thermally cured. Thereby, a semiconductor device can be obtained. During this hot pressing, the molten insulating resin adhesive film spreads toward the outer edge of the semiconductor chip 2 and is further cured. The peripheral edge of the cured insulating resin adhesive film may exist only in the region surrounded by the plurality of bumps 1 arranged in the peripheral, but as shown in FIG. 4B, the plurality of bumps 1 arranged in the peripheral and the semiconductor chip It is preferable that it exists between 2 outer edges at the point which can seal the junction part of the bump 1 and the electrode 11.

熱プレスボンダー３０としては、従来よりフリップチップ実装の際に使用されている熱プレスボンダーを使用することができる。   As the hot press bonder 30, a hot press bonder conventionally used for flip chip mounting can be used.

このような熱プレスボンダー３０を使用する本発明における熱プレス条件は、熱プレスの温度が好ましくは１２０〜２７０℃、より好ましくは１７０〜２００℃である。圧力が好ましくは０．５〜２．５ＭＰａ、より好ましくは２．０〜２．５ＭＰａである。特に、本発明の構成により、熱プレス時の圧力を、従来が１０ｋｇ／ＩＣであるところ、約１／３〜１／５の圧力に低減させることができる。   As for the hot press conditions in the present invention using such a hot press bonder 30, the temperature of the hot press is preferably 120 to 270 ° C, more preferably 170 to 200 ° C. The pressure is preferably 0.5 to 2.5 MPa, more preferably 2.0 to 2.5 MPa. In particular, according to the configuration of the present invention, the pressure during hot pressing can be reduced to about 1/3 to 1/5 of the conventional pressure of 10 kg / IC.

以上説明した本発明の製造方法により得られる半導体装置は、吸湿リフロー耐性を有する、優れた接続信頼性を示すものとなる。   The semiconductor device obtained by the manufacturing method of the present invention described above exhibits excellent connection reliability having moisture absorption reflow resistance.

以下、本発明を実施例により具体的に説明する。なお、以下の実施例において、ＮＣＦ用組成物の最低溶融粘度は、コーン／プレート粘度計を用いて測定した。   Hereinafter, the present invention will be specifically described by way of examples. In the following Examples, the minimum melt viscosity of the NCF composition was measured using a cone / plate viscometer.

絶縁性樹脂接着フィルム（ＮＣＦ）の製造例１〜５
表１の成分を均一に混合し、その混合物に、固形分濃度が６０質量％となるようにトルエンを添加して混合してＮＣＦ用組成物を得た。得られた組成物を、バーコータを用いて剥離フィルム（ソニーケミカル＆インフォメーションデバイス株式会社製）に塗布し、８０℃のオーブン中で乾燥し、５０μｍ厚の絶縁性樹脂接着フィルム（ＮＣＦ）１〜５を得た。得られたＮＣＦの最低溶融粘度（Ｐａ・ｓ）はコーン／プレート粘度計を使用して、昇温速度１０℃／ｍｉｎにて測定し、得られた結果を表１に示す。なお、最低溶融粘度の観点から、本発明に適用可能な絶縁性樹脂接着フィルムはＮＣＦ２〜４である。 Production Examples 1 to 5 of Insulating Resin Adhesive Film (NCF)
The components in Table 1 were mixed uniformly, and toluene was added to the mixture so that the solid content concentration was 60% by mass to obtain an NCF composition. The obtained composition was applied to a release film (manufactured by Sony Chemical & Information Device Co., Ltd.) using a bar coater, dried in an oven at 80 ° C., and an insulating resin adhesive film (NCF) 1 to 5 having a thickness of 50 μm. Got. The minimum melt viscosity (Pa · s) of the obtained NCF was measured at a heating rate of 10 ° C./min using a cone / plate viscometer, and the obtained results are shown in Table 1. In addition, from the viewpoint of the minimum melt viscosity, the insulating resin adhesive film applicable to the present invention is NCF2-4.

Figure 2010226098
Figure 2010226098

実施例１〜７及び比較例１〜６
ペリフェラル配置の複数のＡｕスタッドバンプ（７５〜８５μｍ高；１５０μｍピッチ）が設けられたられたＬＳＩチップ（６．３ｍｍ角、０．１ｍｍ厚；バンプとＬＳＩチップ周縁との平均距離０．１μｍ）の当該バンプに対応した電極（銅にニッケル／金メッキしたもの）を有する基板（ＭＣＬ-Ｅ-679Ｆ、日立化成工業社）の電極に囲まれた領域に、表２に示すＮＣＦ面積率にカットしたＮＣＦ１〜５を、熱プレスボンダー（ソニーケミカル＆インフォメーションデバイス社）で仮貼りした（温度６０℃、圧力０．５ＭＰａ、加熱加圧時間３秒）。ここで、ＮＣＦ面積率とは、複数のバンプで囲まれた領域の面積に対する切り出したＮＣＦの面積の割合である。 Examples 1-7 and Comparative Examples 1-6
LSI chip (6.3 mm square, 0.1 mm thickness; average distance between bump and LSI chip periphery of 0.1 μm) provided with a plurality of peripheral Au stud bumps (75 to 85 μm high; 150 μm pitch) NCF1 cut into the NCF area ratio shown in Table 2 in the region surrounded by the electrode of the substrate (MCL-E-679F, Hitachi Chemical Co., Ltd.) having the electrode corresponding to the bump (nickel / gold plated copper) ˜5 were temporarily pasted with a hot press bonder (Sony Chemical & Information Device) (temperature 60 ° C., pressure 0.5 MPa, heating and pressing time 3 seconds). Here, the NCF area ratio is the ratio of the cut-out NCF area to the area of a region surrounded by a plurality of bumps.

（ボンダーへの樹脂付着の有無）
ＮＣＦを仮貼りした基板の電極面に対し、ＬＳＩチップのバンプ面を対向させ、位置合わせした後に、８ｍｍ角の熱プレスボンダー（ソニーケミカル＆インフォメーションデバイス社）で熱プレス（本熱圧着：温度１８０℃、圧力２．５ＭＰａ、加熱加圧時間２０秒）し、半導体装置を得た。得られた半導体装置について、熱プレスボンダーへの樹脂の付着の有無を目視にて観察した。得られた結果を表２に示す。 (Presence or absence of resin adhesion to the bonder)
The bump surface of the LSI chip is made to face and align with the electrode surface of the substrate on which NCF is temporarily attached, and then heat-pressed with an 8 mm square hot press bonder (Sony Chemical & Information Device Co., Ltd.). C., pressure 2.5 MPa, heating and pressing time 20 seconds) to obtain a semiconductor device. About the obtained semiconductor device, the presence or absence of adhesion of resin to a hot press bonder was observed visually. The obtained results are shown in Table 2.

（吸湿・リフロー耐性）
半導体装置を、温度８５℃、湿度８５％の条件下に１６８時間放置し、最高２６５℃のハンダリフロー炉に浸漬した後の導通抵抗値を測定し、０．１３Ω未満をＡ、０．１３Ω以上１．０Ω未満をＢ、１．０Ω以上をＣと評価した。得られた結果を表２に示す。 (Hygroscopic / Reflow resistance)
The semiconductor device is left to stand for 168 hours at a temperature of 85 ° C. and a humidity of 85%, and after being immersed in a solder reflow furnace at a maximum of 265 ° C., the conduction resistance value is measured. A less than 0.13Ω is A, 0.13Ω or more Less than 1.0Ω was evaluated as B, and 1.0Ω or more was evaluated as C. The obtained results are shown in Table 2.

（初期導通抵抗及びＰＣＴ後の導通抵抗）
また、初期導通抵抗とＰＣＴ試験（１２１℃、湿度１００％の環境下に１２０時間放置）後の導通抵抗を測定した。得られた結果（複数の測定結果のうちの最大の数値）を表２に示す。なお、１Ω以上の導通抵抗の場合をオープン（ｏｐｅｎ）とした。実用上、導通抵抗は０．３Ω以下であることが望まれる。 (Initial conduction resistance and conduction resistance after PCT)
In addition, the initial conduction resistance and the conduction resistance after the PCT test (leaving for 120 hours in an environment of 121 ° C. and 100% humidity) were measured. Table 2 shows the obtained results (maximum numerical values among the plurality of measurement results). Note that the case of a conductive resistance of 1Ω or more was set to open. Practically, the conduction resistance is desired to be 0.3Ω or less.

Figure 2010226098
Figure 2010226098

表２からわかるように、ＮＣＦ面積率が６０〜１００％に相当する大きさと、２×１０２〜１×１０５Ｐａ・ｓの最低溶融粘度とを有するＮＣＦを使用した実施例１〜７の半導体基板は、熱プレス時に絶縁性樹脂のはみ出しがなく、初期およびＰＣＴ試験後のそれぞれの時点での導電抵抗が低く、高い接続信頼性を実現していることがわかった。特に、実施例１〜３の場合、ＰＣＴ試験後の導通抵抗が初期導通抵抗と大差なく、吸湿・リフロー耐性に優れていることがわかった。 As can be seen from Table 2, Examples 1 to 7 using NCF having a size corresponding to an NCF area ratio of 60 to 100% and a minimum melt viscosity of 2 × 10 2 to 1 × 10 5 Pa · s. It was found that the semiconductor substrate did not protrude the insulating resin at the time of hot pressing, had a low conductive resistance at each time after the initial stage and after the PCT test, and realized high connection reliability. In particular, in Examples 1 to 3, it was found that the conduction resistance after the PCT test was not significantly different from the initial conduction resistance and was excellent in moisture absorption and reflow resistance.

それに対し、比較例１、５の場合、ＮＣＦの最低溶融粘度が低すぎるため、比較例４の場合、ＮＣＦの面積率が高すぎるため、ボンダーへの樹脂の付着が観察され、吸湿・リフロー耐性も「Ｃ」評価であり、ＰＣＴ後の導通抵抗も「ｏｐｅｎ」であった。比較例４の場合、それらに加え、初期導通抵抗も「ｏｐｅｎ」であった。比較例２、６の場合、ＮＣＦの最低溶融粘度が高すぎるため、吸湿・リフロー耐性が「Ｃ」評価であり、ＰＣＴ後の導通抵抗が「ｏｐｅｎ」であった。比較例３の場合、ＮＣＦの面積率が低すぎるため、吸湿・リフロー耐性が「Ｃ」評価であり、初期並びにＰＣＴ後の導通抵抗が共に「ｏｐｅｎ」であった。   On the other hand, in the case of Comparative Examples 1 and 5, since the minimum melt viscosity of NCF is too low, in the case of Comparative Example 4, since the area ratio of NCF is too high, adhesion of the resin to the bonder is observed, and moisture absorption / reflow resistance is observed. Was also evaluated as “C”, and the conduction resistance after PCT was also “open”. In the case of Comparative Example 4, in addition to these, the initial conduction resistance was “open”. In Comparative Examples 2 and 6, since the minimum melt viscosity of NCF was too high, the moisture absorption / reflow resistance was evaluated as “C”, and the conduction resistance after PCT was “open”. In the case of Comparative Example 3, since the area ratio of NCF was too low, the moisture absorption / reflow resistance was “C” evaluation, and both the initial and post-PCT conduction resistances were “open”.

（低圧圧着性評価）
熱プレス時の圧力を０．５ＭＰａに設定すること以外は、実施例１及び２の条件での測定をそれぞれ繰り返したところ、ボンダーへの樹脂の付着は観察されず、しかも、ＰＣＴ試験後の導通抵抗も変化しなかった。従って、本発明の製造方法は、低圧圧着に適していることがわかった。 (Low-pressure crimping evaluation)
Except for setting the pressure during hot pressing to 0.5 MPa, the measurement under the conditions of Examples 1 and 2 was repeated. As a result, no adhesion of the resin to the bonder was observed, and conduction after the PCT test was performed. Resistance did not change. Therefore, it was found that the production method of the present invention is suitable for low-pressure crimping.

本発明の半導体装置の製造方法によれば、熱プレスの際に、ＮＣＦのはみ出しと、バンプと電極パッドとの間に絶縁性樹脂や無機フィラーが介在することを防ぎ、十分な耐吸湿リフロー性を示す半導体装置を提供することができる。   According to the method for manufacturing a semiconductor device of the present invention, it is possible to prevent an NCF from protruding and an insulating resin or an inorganic filler from interposing between a bump and an electrode pad during hot pressing, and sufficient moisture absorption reflow resistance. Can be provided.

１、１００ バンプ
２、１０１ 半導体チップ
１１、１０５ 電極
１２、１０４ 基板
３０、１０３ 熱プレスボンダー
ＮＣＦ、１０２ 絶縁性樹脂接着フィルム
Ｒ 領域 1, 100 Bump 2, 101 Semiconductor chip 11, 105 Electrode 12, 104 Substrate 30, 103 Hot press bonder NCF, 102 Insulating resin adhesive film R region

Claims (7)

ペリフェラル配置の複数のバンプを有する半導体チップを、該バンプに対応した複数の電極を有する基板に、絶縁性樹脂接着フィルムを介してフリップチップ実装することにより半導体装置を製造する方法において、
半導体チップのペリフェラル配置された複数のバンプで囲まれた領域の面積の６０〜１００％に相当する大きさと、２×１０２〜１×１０５Ｐａ・ｓの最低溶融粘度とを有する絶縁性樹脂接着フィルムを、該バンプに対応した基板の複数の電極で囲まれた領域に仮貼りし、該バンプとそれに対応する電極とが対向するように、半導体チップと基板とを位置合わせし、半導体チップ側から熱プレスすることにより、バンプと電極とを金属結合させ、絶縁性樹脂接着フィルムを溶融させ、更に熱硬化させることを特徴とする製造方法。 In a method of manufacturing a semiconductor device by flip-chip mounting a semiconductor chip having a plurality of peripherally arranged bumps on a substrate having a plurality of electrodes corresponding to the bumps via an insulating resin adhesive film,
Insulating resin having a size corresponding to 60 to 100% of an area of a semiconductor chip surrounded by peripheral bumps and a minimum melt viscosity of 2 × 10 2 to 1 × 10 5 Pa · s An adhesive film is temporarily attached to a region surrounded by a plurality of electrodes on the substrate corresponding to the bump, and the semiconductor chip and the substrate are aligned so that the bump and the corresponding electrode face each other. A manufacturing method, wherein the bump and the electrode are metal-bonded by hot pressing from the side, the insulating resin adhesive film is melted, and further thermally cured. 半導体チップのペリフェラル配置されたバンプ列で囲まれた領域の面積の７０〜９０％を被覆するように、絶縁性樹脂接着フィルムを基板に仮貼りする請求項１記載の製造方法。   The manufacturing method according to claim 1, wherein the insulating resin adhesive film is temporarily attached to the substrate so as to cover 70 to 90% of the area of the region surrounded by the peripheral bump array of the semiconductor chip. 半導体チップのバンプが、高さ３５〜１００μｍの金スタッドバンプである請求項１または２記載の製造方法。   The manufacturing method according to claim 1, wherein the bump of the semiconductor chip is a gold stud bump having a height of 35 to 100 μm. 絶縁性樹脂接着フィルムが、エポキシ系硬化型樹脂組成物またはアクリル系硬化型樹脂組成物を含有する請求項１〜３のいずれかに記載の製造方法。   The manufacturing method in any one of Claims 1-3 in which an insulating resin adhesive film contains an epoxy-type curable resin composition or an acryl-type curable resin composition. 絶縁性樹脂接着フィルムの厚みが、３０〜７０μｍである請求項１〜４のいずれかに記載の製造方法。   The manufacturing method according to claim 1, wherein the insulating resin adhesive film has a thickness of 30 to 70 μm. 熱プレスの際に、溶融した絶縁性樹脂接着フィルムが、半導体チップの外縁に向かって拡がり、硬化した後にその周縁が、ペリフェラル配置の複数のバンプと半導体チップの外縁との間に存在する請求項１〜５のいずれかに記載の製造方法。   The molten insulating resin adhesive film spreads toward the outer edge of the semiconductor chip during hot pressing, and after being cured, the periphery thereof exists between the plurality of bumps in the peripheral arrangement and the outer edge of the semiconductor chip. The manufacturing method in any one of 1-5. 熱プレスの温度が１２０〜２７０℃であり、圧力が０．５〜２．５ＭＰａである請求項１〜６のいずれかに記載の製造方法。   The temperature of hot press is 120-270 degreeC, and a pressure is 0.5-2.5 Mpa, The manufacturing method in any one of Claims 1-6.
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TWI463575B (en) 2014-12-01
CN102334182B (en) 2015-11-25
JP4984099B2 (en) 2012-07-25
US20160260683A1 (en) 2016-09-08
WO2010098324A1 (en) 2010-09-02
US9368374B2 (en) 2016-06-14
US9524949B2 (en) 2016-12-20
KR20110124262A (en) 2011-11-16
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EP2402985A4 (en) 2014-01-22
WO2010098324A9 (en) 2010-11-18

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