JP2003142522A - Ultrasonic mounting method for flip chip - Google Patents
Ultrasonic mounting method for flip chipInfo
- Publication number
- JP2003142522A JP2003142522A JP2001334242A JP2001334242A JP2003142522A JP 2003142522 A JP2003142522 A JP 2003142522A JP 2001334242 A JP2001334242 A JP 2001334242A JP 2001334242 A JP2001334242 A JP 2001334242A JP 2003142522 A JP2003142522 A JP 2003142522A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- circuit board
- ultrasonic
- resin sheet
- adhesive resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
- H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29005—Structure
- H01L2224/29007—Layer connector smaller than the underlying bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電子回路用プリン
ト基板に電子部品例えばＩＣチップを単体（ベアチッ
プ）の状態で実装するフリップチップ実装のうち、ＩＣ
チップの電極に金属塊（以下バンプと記す）を形成し、
この面を回路基板に対向させて該バンプと回路基板の電
極を位置合わせし、ＩＣチップを回路基板に押圧すると
共に熱と超音波振動を与え接合する超音波フリップチッ
プ実装方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an IC among flip chip mounting for mounting an electronic component such as an IC chip as a single body (bare chip) on a printed circuit board for electronic circuits.
A metal block (hereinafter referred to as a bump) is formed on the chip electrode,
The present invention relates to an ultrasonic flip-chip mounting method in which the bumps are aligned with the electrodes of the circuit board with this surface facing the circuit board, the IC chip is pressed against the circuit board, and heat and ultrasonic vibrations are applied to bond them.
【０００２】[0002]
【従来の技術】近年、モバイル情報通信関連商品等には
回路実装基板のよりいっそうの小型、軽量、高周波化に
よる高性能化、コストダウンが切望されている。そのた
め、ＩＣと回路基板の直接実装が可能なフリップチップ
実装が有効となる。中でも超音波振動を利用した金属拡
散接合は、低接続抵抗、高接合強度、短時間接合等の特
徴があり、ますます注目を集めている。2. Description of the Related Art In recent years, there has been a strong demand for mobile information communication-related products and the like to have circuit packaging boards that are smaller and lighter, have higher performance by higher frequencies, and cost reductions. Therefore, flip-chip mounting, which enables direct mounting of the IC and the circuit board, is effective. Among them, metal diffusion bonding using ultrasonic vibration has characteristics such as low connection resistance, high bonding strength and short-time bonding, and is attracting more and more attention.
【０００３】ここで、図３、図４及び図５に基づいて従
来の超音波フリップチップ実装方法を説明する。図３は
ＩＣチップの電極に対するワイヤボンディング工法を利
用したバンプの形成方法を示す。まず、図３（ａ）にお
いて、キャピラリ２０１に保持された金ワイヤ２０２の
先端に放電作用によりボール２０３を形成し、キャピラ
リ２０１を矢印アの方向に移動させることによりボール
２０３をＩＣチップ２０４の電極２０５に押圧し接合す
る。Here, a conventional ultrasonic flip chip mounting method will be described with reference to FIGS. 3, 4 and 5. FIG. 3 shows a bump forming method using a wire bonding method for the electrodes of an IC chip. First, in FIG. 3A, a ball 203 is formed on the tip of the gold wire 202 held by the capillary 201 by an electric discharge action, and the capillary 201 is moved in the direction of arrow A to move the ball 203 to the electrode of the IC chip 204. 205 is pressed and joined.
【０００４】この接合には熱圧着あるいはこれに超音波
振動を加える方法がある。さらに図３（ｂ）で示すよう
に、金ワイヤ２０２と共にキャピラリ２０１を矢印イの
方向に移動させることにより金ワイヤ２０２を引きちぎ
り、電極２０５上にバンプ２０６を形成する。このよう
にして形成されたバンプ２０６は先端２０６Ａが尖った
鋲状の形態を呈する。For this joining, there is a method of thermocompression bonding or a method of applying ultrasonic vibration thereto. Further, as shown in FIG. 3B, by moving the capillary 201 together with the gold wire 202 in the direction of arrow a, the gold wire 202 is torn off and bumps 206 are formed on the electrodes 205. The bump 206 thus formed has a rivet-like shape with a sharp tip 206A.
【０００５】次に図４は従来の一般的な超音波フリップ
チップ実装装置の主要部を示す。まず、前述した方法で
バンプ２０６が形成されたＩＣチップ２０４をバンプ２
０６の形成面を下にして、接合ツール先端（以下コレッ
ト１０１と記す）にエア流路１０２を利用して発生させ
た負圧により吸着保持する。Next, FIG. 4 shows a main part of a conventional general ultrasonic flip chip mounting apparatus. First, the IC chip 204 on which the bump 206 is formed by the method described above
With the forming surface of 06 facing downward, the tip of the welding tool (hereinafter referred to as collet 101) is sucked and held by the negative pressure generated by using the air flow path 102.
【０００６】さらにステージ１０３上に回路基板１０４
を載置し、ＩＣチップ２０４に形成されたバンプ２０６
と回路基板１０４上の電極１０５とを位置合わせしたの
ち、コレット１０１を矢印エの方向に下降させる。この
結果バンプ２０６の先端２０６Ａが電極１０５に当接
し、先端２０６Ａが僅かにつぶれる。ここで、超音波信
号発生器１０６で発生した電気信号が振動子１０７に伝
達され、振動子１０７は前記電気信号を物理的な超音波
振動に変換する。Further, a circuit board 104 is mounted on the stage 103.
And the bump 206 formed on the IC chip 204
After aligning the electrode 105 on the circuit board 104 with the electrode 105, the collet 101 is lowered in the direction of arrow d. As a result, the tip 206A of the bump 206 contacts the electrode 105, and the tip 206A is slightly crushed. Here, the electric signal generated by the ultrasonic signal generator 106 is transmitted to the vibrator 107, and the vibrator 107 converts the electric signal into physical ultrasonic vibration.
【０００７】さらに前記超音波振動は共振器１０８によ
り矢印ウ方向の縦波として伝達され、これに連結された
コレット１０１に所定の超音波振動を与える。このよう
にして、接合部に回路基板１０４の表面と平行方向の超
音波振動を付与し、同時に回路基板１０４の表面に対し
て垂直に押圧する矢印エ方向の荷重を加える。さらにこ
の接合部を所定の温度に加熱しておくことでバンプ２０
６は図５（ａ）から図５（ｂ）のように変形しながら電
極１０５に接合する。Further, the ultrasonic vibration is transmitted as a longitudinal wave in the direction of arrow C by the resonator 108, and a predetermined ultrasonic vibration is applied to the collet 101 connected thereto. In this way, ultrasonic vibration in a direction parallel to the surface of the circuit board 104 is applied to the joint portion, and at the same time, a load is applied in the direction of arrow D to press the surface of the circuit board 104 perpendicularly. Further, by heating this bonding portion to a predetermined temperature, the bump 20
6 is bonded to the electrode 105 while being deformed as shown in FIGS. 5 (a) and 5 (b).
【０００８】[0008]
【発明が解決しようとする課題】ここで、前述した接合
方法の結果においてバンプ２０６と電極１０５の接合部
を分析してみると、下記の現象が見出された。図５
（ａ）の段階、つまり矢印エの方向に押圧されることに
よりバンプ２０６の先端がつぶれ、その結果生じたバン
プ２０６と電極１０５の当接面は前記分析の結果拡散接
合しておらず、図５（ｂ）の段階、つまり超音波振動と
加熱及び加圧によりバンプ２０６が変形して電極１０５
に当接した部分は両金属間で拡散接合している。Here, the following phenomenon was found by analyzing the joint between the bump 206 and the electrode 105 in the result of the above-mentioned joining method. Figure 5
In the step (a), that is, when the tip of the bump 206 is crushed by being pressed in the direction of arrow D, the contact surface between the bump 206 and the electrode 105 resulting from the analysis is not diffusion bonded, 5 (b), that is, the bump 206 is deformed by ultrasonic vibration and heating and pressurization, and the electrode 105
The portion abutting against is diffusion bonded between both metals.
【０００９】言い換えると、接合のドーナッツ形現象が
生じていることになる。この結果から、より強固で信頼
性のある接合を得るために、図５（ａ）の段階における
バンプ２０６の先端のつぶれは極力小さい方が有利にな
ることは自明である。In other words, the donut-shaped phenomenon of joining has occurred. From this result, it is obvious that in order to obtain a stronger and more reliable bond, it is advantageous that the collapse of the tip of the bump 206 in the stage of FIG. 5A is as small as possible.
【００１０】しかしながら、前記したように図５（ａ）
の段階のつぶれ量を小さくすると、下記のような問題が
生じる。接合装置は精密作業を目的として設計、製造さ
れたものであるから、その機構的精度の確保には多大な
努力が注がれている。しかし、図４におけるステージ１
０３の上面と矢印エの方向にＩＣチップ２０４を押圧す
る摺動機構の直角度、あるいはステージ１０３の上面と
コレット１０１の下面の平行度の誤差がプラスマイナス
ゼロということはほぼ有り得ない。However, as described above, FIG.
If the amount of crushing at the stage is reduced, the following problems occur. Since the joining device is designed and manufactured for the purpose of precision work, great efforts are being made to ensure its mechanical accuracy. However, stage 1 in FIG.
It is almost impossible that the squareness of the sliding mechanism that presses the IC chip 204 in the direction of arrow D with the upper surface of 03 or the parallelism between the upper surface of the stage 103 and the lower surface of the collet 101 is plus or minus zero.
【００１１】また、ＩＣチップ２０４あるいは回路基板
１０４の厚みが完全に均一であることもほぼ有り得な
い。このような状況の中で図５（ｂ）のように矢印ウの
方向に超音波振動が加えられると、ＩＣチップ２０４は
位置決めされた位置からずれようとする挙動を呈す。そ
の時、バンプ２０６の先端が僅かしかつぶれていない場
合には、バンプ２０６の先端と電極１０５との摩擦によ
る制動力が少ないために次第に位置ずれを起こしたり、
細長く残ったバンプ２０６の突出部が座屈変形して横ず
れを起こしたりすることで、致命的な欠陥の発生に至る
場合がある。Further, it is almost impossible that the thickness of the IC chip 204 or the circuit board 104 is completely uniform. In such a situation, when ultrasonic vibration is applied in the direction of arrow C as shown in FIG. 5B, the IC chip 204 exhibits a behavior of trying to deviate from the positioned position. At that time, if the tip of the bump 206 is slightly crushed, the braking force due to the friction between the tip of the bump 206 and the electrode 105 is small, and thus the position is gradually displaced.
If the protruding portion of the bump 206 that remains long and slender is buckled and laterally displaced, a fatal defect may occur.
【００１２】本発明は上記課題を解決するために成され
たもので、超音波振動付与直後の不安定な状態のＩＣチ
ップに対して、所定の位置からのずれを阻止すべく、補
強材を使用した超音波フリップチップ実装方法を提供す
ることを目的とする。The present invention has been made to solve the above problems, and a reinforcing material is provided to prevent the IC chip in an unstable state immediately after application of ultrasonic vibration from being displaced from a predetermined position. It is an object of the present invention to provide an ultrasonic flip chip mounting method used.
【００１３】[0013]
【課題を解決するための手段】本発明は、ＩＣチップの
電極にワイヤボンディング工法で鋲状のバンプを形成
し、このバンプを回路基板の電極に位置合わせし、該Ｉ
Ｃチップを該回路基板に超音波によりフェイスダウン接
合する超音波フリップチップ実装方法において、第１の
手段として、接合前にＩＣチップと回路基板の間に熱硬
化性の粘着性樹脂シートを介在させ、該ＩＣチップのバ
ンプと該回路基板の電極を位置合わせし、該ＩＣチップ
を該回路基板に押圧すると共に熱と超音波振動を与え、
該ＩＣチップの本体及び該回路基板表面に半硬化状態に
ある該粘着性樹脂シートの両面がそれぞれ粘着すること
により、超音波振動付与直後の該ＩＣチップの位置ずれ
を防ぎ、所望の位置に正確に接合可能とすることを特徴
とした超音波フリップチップ実装方法を提供する。According to the present invention, a stud-shaped bump is formed on an electrode of an IC chip by a wire bonding method, and the bump is aligned with an electrode of a circuit board.
In an ultrasonic flip-chip mounting method for ultrasonically face-bonding a C chip to the circuit board, as a first means, a thermosetting adhesive resin sheet is interposed between the IC chip and the circuit board before bonding. Aligning the bumps of the IC chip with the electrodes of the circuit board, pressing the IC chip against the circuit board, and applying heat and ultrasonic vibration,
By sticking both sides of the adhesive resin sheet in a semi-cured state to the body of the IC chip and the surface of the circuit board, displacement of the IC chip immediately after application of ultrasonic vibration can be prevented, and accurate positioning at a desired position can be achieved. Provided is an ultrasonic flip-chip mounting method, which is characterized in that it can be bonded to a substrate.
【００１４】また第２の手段として、第１の手段におけ
る粘着性樹脂シートの外形寸法が、前記ＩＣチップの接
合面の最も内側にあるバンプで囲まれた領域よりも小さ
いことを特徴とした超音波フリップチップ実装方法を提
供する。As a second means, the external dimensions of the adhesive resin sheet in the first means are smaller than the innermost area surrounded by the bumps on the bonding surface of the IC chip. A sonic flip-chip mounting method is provided.
【００１５】さらに第３の手段として、第１の手段また
は第２の手段における粘着性樹脂シートが、熱硬化後も
弾性を有することを特徴とした超音波フリップチップ実
装方法を提供する。Further, as a third means, there is provided an ultrasonic flip-chip mounting method characterized in that the adhesive resin sheet in the first means or the second means has elasticity even after thermosetting.
【００１６】加えて第４の手段として、第１から第３の
手段のいずれかにおける超音波振動が、振幅を一定に保
つための制御機能を有した超音波発振装置により得られ
る振動であることを特徴とした超音波フリップチップ実
装方法を提供する。In addition, as a fourth means, the ultrasonic vibration in any one of the first to third means is a vibration obtained by an ultrasonic oscillation device having a control function for keeping the amplitude constant. An ultrasonic flip chip mounting method is provided.
【００１７】[0017]
【発明の実施の形態】以下、本発明の実施の形態を図１
及び図２に基づいて説明する。図１は本発明の１実施形
態を示す斜視図である。図１において、１０１は図示し
ない吸着ノズルを有したコレット、２０４は図示しない
バンプが下面に形成されたＩＣチップ、１は粘着性樹脂
シート、１０４は回路基板、１０５は回路基板１０４上
に形成された電極、１０３は回路基板１０４を載置する
ステージである。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to FIG.
And it demonstrates based on FIG. FIG. 1 is a perspective view showing an embodiment of the present invention. In FIG. 1, 101 is a collet having a suction nozzle (not shown), 204 is an IC chip having bumps (not shown) formed on the lower surface, 1 is an adhesive resin sheet, 104 is a circuit board, and 105 is formed on the circuit board 104. The electrode 103 is a stage on which the circuit board 104 is placed.
【００１８】図１において、コレット１０１に吸着され
たＩＣチップ２０４と回路基板１０４とのあいだに粘着
性樹脂シート１を介在させ、ＩＣチップ２０４に形成さ
れたバンプと回路基板１０４上に形成された電極１０５
とを位置決めした後矢印エの方向にコレット１０１を下
降させ、接合動作に入る。In FIG. 1, the adhesive resin sheet 1 is interposed between the IC chip 204 adsorbed to the collet 101 and the circuit board 104, and the bumps formed on the IC chip 204 and the circuit board 104 are formed. Electrode 105
After positioning and, the collet 101 is lowered in the direction of arrow D to start the joining operation.
【００１９】このとき、粘着性樹脂シート１はあらかじ
め回路基板１０４の上面あるいはＩＣチップ２０４の下
面に貼り付けるが、この貼り付け工程においては、従来
からあるＡＣＦ工法における異方性導電フィルムの貼り
付け工程のように、リール状のセパレータ付き粘着性樹
脂シートを用い、切断、吸着保持、貼り付けという一連
の工程を自動的に行うことにより、量産に適したライン
を構築することができる。At this time, the adhesive resin sheet 1 is attached in advance to the upper surface of the circuit board 104 or the lower surface of the IC chip 204. In this attaching step, the anisotropic conductive film is attached in the conventional ACF method. As in the process, by using a reel-shaped adhesive resin sheet with a separator and automatically performing a series of processes such as cutting, suction holding, and pasting, a line suitable for mass production can be constructed.
【００２０】図２は本発明の１実施形態を示す側面図で
ある。この中で図２（ａ）は、コレット１０１が下降す
ることにより、バンプ２０６の先端と回路基板１０４上
の電極１０５が接触した状態である。ここでの粘着性樹
脂シート１の外形寸法はバンプ２０６が形成されている
領域を避け、内側のバンプ２０６の無いエリアに合わせ
て形成してある。しかし、粘着性樹脂シート１をバンプ
２０６が形成されたエリアも含んだ外形寸法とし、バン
プ２０６が粘着性樹脂シート１を突き抜けて電極１０５
に接触するようにしてもよい。FIG. 2 is a side view showing an embodiment of the present invention. 2A shows a state in which the tip of the bump 206 and the electrode 105 on the circuit board 104 are in contact with each other as the collet 101 descends. The external dimensions of the adhesive resin sheet 1 here are formed so as to avoid the area where the bumps 206 are formed and to match the area without the bumps 206 inside. However, the adhesive resin sheet 1 has an outer dimension including the area where the bumps 206 are formed, and the bumps 206 penetrate the adhesive resin sheet 1 to form the electrodes 105.
May be contacted with.
【００２１】一般的な超音波フリップチップ接合に用い
られる直径２５μｍの金ワイヤでは、高さ８０μｍ前後
の鋲状バンプが形成される。これに対し超音波振動を付
与する前の矢印エの方向の静荷重、言わばトリガー荷重
を所定値（例えば１０グラム／１バンプ）加えると、こ
のバンプは高さが６０μｍ程度になるまで変形する。こ
こで、回路基板１０４上にパターン形成された電極１０
５の厚みを１５μｍとし図２（ｂ）に当てはめると、寸
法Ｘは７５μｍになる。With a gold wire having a diameter of 25 μm used for general ultrasonic flip chip bonding, stud-shaped bumps having a height of about 80 μm are formed. On the other hand, when a static load in the direction of arrow D before applying ultrasonic vibration, that is, a trigger load is applied with a predetermined value (for example, 10 grams / 1 bump), the bump is deformed until the height becomes about 60 μm. Here, the electrode 10 patterned on the circuit board 104 is formed.
When the thickness of 5 is set to 15 μm and applied to FIG. 2B, the dimension X becomes 75 μm.
【００２２】このとき、粘着性樹脂シート１の厚みを８
０μｍ程度にしておけば、トリガー荷重を加え終わった
段階、つまり図２（ｂ）の段階で、粘着性樹脂シート１
は回路基板１０４の上面とＩＣチップ２０４の本体の下
面の両方に粘着する。この粘着性樹脂シート１には、例
えば１００℃程度の加熱でＢステージ（半硬化）状態と
なる熱硬化性樹脂シートのように、この時点でゲル状と
なり弾性を有するような素材が好適である。At this time, the thickness of the adhesive resin sheet 1 is set to 8
If the thickness is set to about 0 μm, the pressure-sensitive adhesive resin sheet 1 will be removed when the trigger load has been applied, that is, at the stage of FIG.
Adheres to both the upper surface of the circuit board 104 and the lower surface of the main body of the IC chip 204. For the adhesive resin sheet 1, a material that is gel-like and elastic at this point is suitable, such as a thermosetting resin sheet that is in a B-stage (semi-cured) state when heated at about 100 ° C. .
【００２３】これによりこの後ＩＣチップ２０４に付与
される、振幅が２ｍｍから５ｍｍであって、回路基板１
０４表面に平行な方向の超音波振動を前記弾性あるいは
粘着材の粘性で吸収し、超音波振動自体は阻害せずに、
振動による僅かな位置ずれの累積あるいはバンプ２０６
の突出部の座屈変形を阻止する。As a result, the circuit board 1 having an amplitude of 2 mm to 5 mm applied to the IC chip 204 after this
04 The ultrasonic vibration in the direction parallel to the surface is absorbed by the elasticity or the viscosity of the adhesive material, and the ultrasonic vibration itself is not hindered,
Accumulation of slight displacement due to vibration or bump 206
Prevents buckling deformation of the protruding part.
【００２４】次に、図２（ｃ）で示すように、熱と矢印
エ方向の荷重を加えながら矢印ウ方向の超音波振動を付
与することにより、数百マイクロ秒から１秒間かけてバ
ンプ２０６は高さ３５μｍ程度にまで変形し、電極１０
５とのあいだに固相拡散による接合が成される。また、
これと同時に粘着性樹脂シート１も押しつぶされ、その
後その形状のままで硬化させれば前記接合の補強として
機能する。Next, as shown in FIG. 2C, by applying heat and a load in the arrow D direction, ultrasonic vibration in the arrow C direction is applied to the bump 206 for several hundred microseconds to one second. Is deformed to a height of about 35 μm, and the electrode 10
Between 5 and 5, a solid phase diffusion bond is formed. Also,
At the same time, the adhesive resin sheet 1 is also crushed, and if it is then cured in its shape, it functions as a reinforcement for the above-mentioned joining.
【００２５】あるいは粘着性樹脂シート１として、エポ
キシ樹脂を含浸させたｅＰＴＦＥ（延伸多孔質ポリ・テ
トラ・フロロ・エチレン）のように硬化後も弾性を有す
る素材を適用すれば、接合後の振動あるいは衝撃エネル
ギーを吸収する緩衝材とすることができる。その他、接
合後アンダーフィルを別途注入して粘着性樹脂シート１
と同時に硬化させることで、補強に加えて防湿処理等を
目的とした封止が実現できる。Alternatively, if a material having elasticity even after curing, such as ePTFE (expanded porous poly-tetra-fluoro-ethylene) impregnated with an epoxy resin, is used as the adhesive resin sheet 1, vibration or vibration after bonding It can be a cushioning material that absorbs impact energy. In addition, after joining, underfill is injected separately to make an adhesive resin sheet 1
By curing at the same time, sealing for the purpose of moistureproof treatment in addition to reinforcement can be realized.
【００２６】さらに、本実施の形態では、粘着性樹脂シ
ート１として超音波発振時に全体が弾性を有するものを
使用していたが、弾性を有さない基材層の両面に粘着層
が積層された多層構造のシートを使用してもよい。加え
て、本発明によるフリップチップ接合においては、フィ
ードバック制御によって振幅を一定に保つ機能を有した
超音波発振装置を使用することで、より一層安定した効
果を得ることができる。Further, in the present embodiment, the adhesive resin sheet 1 which has elasticity as a whole at the time of ultrasonic oscillation is used. However, an adhesive layer is laminated on both sides of a base material layer having no elasticity. A multi-layered sheet may also be used. In addition, in the flip-chip bonding according to the present invention, a more stable effect can be obtained by using the ultrasonic oscillator having the function of keeping the amplitude constant by feedback control.
【００２７】[0027]
【発明の効果】本発明によれば、粘着性樹脂シート１が
回路基板１０４とＩＣチップ２０４に同時に粘着するこ
とで、トリガー荷重を小さくしても、接合時の超音波振
動による位置ずれ、あるいはバンプ２０６の突出部の座
屈変形を回避することができる。したがって接合面にお
いては、トリガー荷重でつぶれるバンプ２０６の先端の
面積を小さくすることができ、トリガー荷重でつぶれた
面の外側に従来の実装方法よりも幅の広いドーナッツ形
状の拡散接合面が得られ、これにより品質の安定した強
固な接合が実現できる。According to the present invention, since the adhesive resin sheet 1 adheres to the circuit board 104 and the IC chip 204 at the same time, even if the trigger load is reduced, displacement due to ultrasonic vibration during bonding, or Buckling deformation of the protruding portion of the bump 206 can be avoided. Therefore, in the joint surface, the area of the tip of the bump 206 crushed by the trigger load can be reduced, and a doughnut-shaped diffusion bonding surface wider than the conventional mounting method can be obtained outside the surface crushed by the trigger load. As a result, it is possible to realize strong and stable joining with stable quality.
【００２８】また、粘着性樹脂シート１の外形寸法を、
ＩＣチップ２０４の接合面の最も内側にあるバンプで囲
まれた領域よりも小さくすることにより、バンプ２０６
を粘着性樹脂シート１に貫通させて電極１０５と接合す
る工法に適さない粘着性樹脂シート１の素材であっても
本発明による実装方法を実施することができ、素材の選
択肢が広がる。The external dimensions of the adhesive resin sheet 1 are
The bump 206 is formed by making it smaller than the area surrounded by the innermost bump on the bonding surface of the IC chip 204.
Even the material of the adhesive resin sheet 1 which is not suitable for the method of penetrating the adhesive resin sheet 1 and joining with the electrode 105 can implement the mounting method according to the present invention, and the choice of materials is expanded.
【００２９】さらに、粘着性樹脂シート１に熱硬化後も
弾性を有する素材を適用した場合、フリップチップ実装
後における振動・衝撃等の外敵ストレスを緩和する緩衝
材としての作用を奏する。加えて、本発明による実装方
法に、振幅を一定に保つ制御機能を有した超音波発振装
置を使用すれば、より安定した接合品質を得ることがで
きる。Furthermore, when a material having elasticity even after thermosetting is applied to the adhesive resin sheet 1, the adhesive resin sheet 1 acts as a cushioning material for mitigating external stress such as vibration and impact after flip chip mounting. In addition, if an ultrasonic oscillator having a control function of keeping the amplitude constant is used in the mounting method according to the present invention, more stable joining quality can be obtained.
【図１】本発明の１実施の形態を示す斜視図FIG. 1 is a perspective view showing an embodiment of the present invention.
【図２】本発明の１実施の形態を示す側面図FIG. 2 is a side view showing an embodiment of the present invention.
【図３】従来のバンプ形成を示す断面図FIG. 3 is a sectional view showing conventional bump formation.
【図４】従来の超音波接合を示す側面図FIG. 4 is a side view showing a conventional ultrasonic bonding.
【図５】従来の超音波接合を示す側面図FIG. 5 is a side view showing conventional ultrasonic bonding.
１ 粘着性樹脂シート １０１ コレット １０４ 回路基板 １０５ 電極 ２０４ ＩＣチップ ２０６ バンプ 1 Adhesive resin sheet 101 Collet 104 circuit board 105 electrode 204 IC chip 206 bump
Claims (4)
工法で鋲状のバンプを形成し、このバンプを回路基板の
電極に位置合わせし、該ＩＣチップを該回路基板に超音
波によりフェイスダウン接合する超音波フリップチップ
実装方法であって、 接合前にＩＣチップと回路基板の間に熱硬化性の粘着性
樹脂シートを介在させ、 該ＩＣチップのバンプと該回路基板の電極を位置合わせ
し、 該ＩＣチップを該回路基板に押圧すると共に熱と超音波
振動を与え、 該ＩＣチップの本体及び該回路基板表面に半硬化状態に
ある該粘着性樹脂シートの両面がそれぞれ粘着すること
により、超音波振動付与直後の該ＩＣチップの位置ずれ
を防ぎ、所望の位置に正確に接合可能とすることを特徴
とした超音波フリップチップ実装方法。1. A method for forming a stud-like bump on an electrode of an IC chip by a wire bonding method, aligning the bump with an electrode of a circuit board, and ultrasonically face down bonding the IC chip to the circuit board. A sonic flip-chip mounting method, wherein a thermosetting adhesive resin sheet is interposed between an IC chip and a circuit board before bonding, and bumps of the IC chip and electrodes of the circuit board are aligned with each other. The chip is pressed against the circuit board and heat and ultrasonic vibration are applied, and both sides of the semi-cured adhesive resin sheet adhere to the body of the IC chip and the surface of the circuit board. An ultrasonic flip-chip mounting method, characterized in that the IC chip is prevented from being displaced immediately after being applied and can be accurately bonded to a desired position.
記ＩＣチップの接合面の最も内側にあるバンプで囲まれ
た領域よりも小さいことを特徴とした請求項１に記載の
超音波フリップチップ実装方法。2. The ultrasonic flip chip according to claim 1, wherein an outer dimension of the adhesive resin sheet is smaller than a region surrounded by bumps located on the innermost side of the bonding surface of the IC chip. How to implement.
を有することを特徴とした請求項１または２に記載の超
音波フリップチップ実装方法。3. The ultrasonic flip chip mounting method according to claim 1, wherein the adhesive resin sheet has elasticity even after thermosetting.
めの制御機能を有した超音波発振装置により得られる振
動であることを特徴とした請求項１から３のいずれかに
記載の超音波フリップチップ実装方法。4. The ultrasonic wave according to claim 1, wherein the ultrasonic wave vibration is a vibration obtained by an ultrasonic wave oscillating device having a control function for keeping the amplitude constant. Sonic flip chip mounting method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001334242A JP2003142522A (en) | 2001-10-31 | 2001-10-31 | Ultrasonic mounting method for flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001334242A JP2003142522A (en) | 2001-10-31 | 2001-10-31 | Ultrasonic mounting method for flip chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003142522A true JP2003142522A (en) | 2003-05-16 |
Family
ID=19149399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001334242A Pending JP2003142522A (en) | 2001-10-31 | 2001-10-31 | Ultrasonic mounting method for flip chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003142522A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009277823A (en) * | 2008-05-14 | 2009-11-26 | Panasonic Corp | Component mounting method and component mounting line |
| JP2010226098A (en) * | 2009-02-27 | 2010-10-07 | Sony Chemical & Information Device Corp | Method of producing semiconductor device |
-
2001
- 2001-10-31 JP JP2001334242A patent/JP2003142522A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009277823A (en) * | 2008-05-14 | 2009-11-26 | Panasonic Corp | Component mounting method and component mounting line |
| JP2010226098A (en) * | 2009-02-27 | 2010-10-07 | Sony Chemical & Information Device Corp | Method of producing semiconductor device |
| CN102334182A (en) * | 2009-02-27 | 2012-01-25 | 索尼化学&信息部件株式会社 | Method of producing semiconductor device |
| KR101232409B1 (en) | 2009-02-27 | 2013-02-12 | 데쿠세리아루즈 가부시키가이샤 | Method of producing semiconductor device |
| US9368374B2 (en) | 2009-02-27 | 2016-06-14 | Dexerials Corporation | Method of manufacturing semiconductor device |
| US9524949B2 (en) | 2009-02-27 | 2016-12-20 | Dexerials Corporation | Semiconductor device having semiconductor chip affixed to substrate via insulating resin adhesive film |
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