JP2010226061A - Method of manufacturing semiconductor device, and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To overcome the problem that conventional methods of hetero-bonding compound semiconductors find it difficult to obtain sufficient noise characteristics in a semiconductor device that deals with a minute signal current. <P>SOLUTION: A first semiconductor which is a III-V group compound semiconductor is grown on a substrate with a first substrate temperature. The growth of the first semiconductor is ceased, and the substrate temperature is changed to a second substrate temperature that is different from the first substrate temperature while a V group element material is supplied to the surface of the first semiconductor. A second semiconductor, which is a III-V group compound semiconductor different from the first semiconductor, is grown on the first semiconductor with the second substrate temperature. The process of changing the substrate temperature from the first substrate temperature to the second substrate temperature includes measuring the substrate temperatures and controlling supply amount to ensure that the supply amount of the V group element will be between a target lowest value and a target highest value of the supply amount at the measured substrate temperatures. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a semiconductor device including a heterojunction of a compound semiconductor by supplying a group III element source and a group V element source on a substrate, and a semiconductor manufacturing apparatus.

  When a compound semiconductor film is grown on a substrate, the optimum growth temperature differs depending on the composition of the compound semiconductor. For this reason, after forming the lower layer film, the growth is temporarily interrupted, and the substrate temperature is changed to the optimum growth temperature of the upper layer film. In order to prevent the divergence of group V elements such as As during the period in which the growth is interrupted, it is preferable to supply a group V element raw material.

JP-A-4-164893 JP 2003-51456 A

  In a conventional method for manufacturing a compound semiconductor heterojunction, it is difficult to obtain sufficient noise characteristics in a semiconductor device that handles a minute signal current. There is a demand for improving noise characteristics when the signal current is very small.

A method of manufacturing a semiconductor device that solves the above problems is as follows.
Growing a first semiconductor, which is a group III-V compound semiconductor, on a substrate at a first substrate temperature;
A second substrate temperature different from the first substrate temperature while stopping the growth of the first semiconductor and supplying a Group V element source to the surface of the first semiconductor. A process of changing to
Growing a second semiconductor, which is a group III-V compound semiconductor different from the first semiconductor, on the first semiconductor at the second substrate temperature;
Changing the temperature of the substrate from the first substrate temperature to the second substrate temperature;
Measuring the temperature of the substrate;
Controlling the supply amount so that the supply amount of the group V element falls within the target lower limit value and the target upper limit value of the supply amount at the measured substrate temperature.

A semiconductor manufacturing apparatus that solves the above problems
A chamber containing a growth substrate;
A raw material supply device for supplying a group III element raw material and a group V element raw material in a controlled supply amount into the chamber;
A temperature measuring device for measuring the temperature of the growth substrate housed in the chamber;
For each substrate temperature, the target lower limit value and the target upper limit value of the supply amount of the group V element are stored, and based on the measurement result by the temperature measuring device, the supply amount of the group V element is the target lower limit value and the target upper limit value. And a control device for controlling the raw material supply device so as to fall between the values.

  By controlling the supply amount of the group V element as described above during the period of changing the substrate temperature, a semiconductor device having excellent noise characteristics can be obtained.

It is the schematic of the MBE apparatus used in an Example. (2A) is a cross-sectional view of the semiconductor device manufactured by the method according to Example 1 and a graph showing the growth temperature, and (2B) shows a preferred range with a preferred range of substrate temperature and As supply amount. It is a graph. It is a graph which compares the measurement result of the noise characteristic of the semiconductor device manufactured by the method by Example 1, with the noise characteristic of the semiconductor device of the same structure manufactured by the conventional method. FIG. 6 is a cross-sectional view in the middle of manufacturing of a semiconductor device manufacturing method according to a second embodiment and a cross-sectional view when completed. FIG. 10 is a cross-sectional view in the middle of manufacturing of a method for manufacturing a semiconductor device according to Example 3, and a cross-sectional view when completed.

  FIG. 1 is a schematic diagram of a molecular beam epitaxy (MBE) apparatus used in a method for manufacturing a semiconductor device according to an embodiment.

  A stage 11 is accommodated in the chamber 10. The inside of the chamber 10 is evacuated through the exhaust pipe 14. A substrate 28 is held on the stage 11. A heater 16 is disposed in the stage 11 so that the substrate 28 can be heated. The temperature measuring device 13 measures the temperature of the substrate 28, and the measurement result is input to the control device 25. For the temperature measuring device 13, for example, a radiation thermometer (pyrometer) is used. The heater 16 is controlled by the control device 25.

  A raw material supply device 20 is attached at a position facing the stage 11. For the raw material supply device 20, for example, Knudsen cell (K cell) is used. A K cell is prepared for each raw material such as Al, Ga, In, As, and Si. The supply amount control unit 21 can change the supply amount for each raw material by receiving a command from the control device 25 and controlling the temperature of each K cell.

  A valve cell may be used instead of the K cell. When using a valve cell, the supply amount of the raw material is controlled by adjusting the opening of the valve. When a gas source is used as the growth raw material, a gas cell is used for the raw material supply apparatus 20. When using a gas cell, the supply amount of the raw material is controlled by adjusting the opening of the valve and the pressure in the gas cell.

  A beam intensity meter 12 is disposed behind the stage 11 when viewed from the raw material supply device 20. For the beam intensity meter 12, for example, an ionization vacuum gauge is used. The beam intensity meter 12 can measure the beam intensity of the molecular beam with the stage 11 retracted from the beam path. A measurement result by the beam intensity meter 12 is input to the control device 25. The beam intensity of the molecular beam can be converted into an equivalent pressure.

  A reflection high energy electron diffraction (RHEED) measuring instrument 15 is attached to the chamber 10. The RHEED measuring instrument 15 includes an electron gun 15A and a diffracted beam detector 15B. The RHEED electron gun 15 </ b> A causes an electron beam to enter the substrate 28. The electron beam diffracted by the substrate 28 is detected by the detector 15B. The detection result is input to the control device 25.

  With reference to FIGS. 2A to 3, a method of manufacturing a semiconductor device according to the first embodiment will be described.

On a GaAs substrate 30, substrate temperature of _{T 2,} growing the AlGaAs layer 31 by MBE. Temperature _{T 2} is, for example, 600 ° C.. Thereafter, the growth of the AlGaAs layer 31 is stopped, and the substrate temperature is lowered to T ₁ while the As raw material is supplied. Temperatures _{T 1} is, for example, 500 ° C..

Substrate temperature of _{T 1,} an InGaAs layer 32 is grown by MBE. Further, an AlGaAs layer 33 is grown. Thereafter, the substrate temperature is raised to T ₂ with the As raw material provided. Substrate temperature of _{T 2,} the AlGaAs layer 34 is grown by MBE.

  During the growth of these layers, for example, solid materials are used as materials for Al, Ga, In, and As. The AlGaAs layer 33 is disposed to prevent the separation of In in the InGaAs layer 32 when the substrate temperature is raised to around 600 ° C. Therefore, the thickness of the AlGaAs layer 33 may be a thickness sufficient to prevent the separation of In in the underlying InGaAs layer 32, for example, about 5 nm. Depending on the growth conditions of the layer on the InGaAs layer 32, the AlGaAs layer 33 may not be formed.

  FIG. 2B shows a preferred range of the substrate temperature and the As supply amount when the growth is interrupted with AlGaAs exposed on the substrate surface. The horizontal axis represents the supply amount of As, and the vertical axis represents the substrate temperature. The substrate temperature and As supply amount during the growth interruption are referred to as “interruption conditions”. The thin solid lines 37L and 37U correspond to the As supply amount lower limit value and the upper limit value, respectively, of the preferred interrupting conditions. Hereinafter, a method of determining the line 37L corresponding to the As supply amount lower limit value and the line 37U corresponding to the As supply amount upper limit value will be described.

An evaluation substrate 28 is mounted on the stage 11 of the MBE apparatus shown in FIG. An AlGaAs layer is formed on the substrate 28. Maintaining the substrate temperature _{T 1,} while changing the As feed rate to measure the crystalline state of the AlGaAs layer in RHEED measurement instrument 15. From the measurement result, the crystal state of the surface layer portion of the AlGaAs layer can be evaluated.

The same evaluation is performed by raising the substrate temperature from T ₁ by a certain step size ΔT. This evaluation is repeated until the substrate temperature is T _2. The region in which the crystal state of the AlGaAs layer is determined to be good by this evaluation corresponds to the region between the line 37L corresponding to the As supply amount lower limit value and the line 37U corresponding to the As supply amount upper limit value. In a state where the As supply amount is lower than the line 37L corresponding to the As supply amount lower limit value, or in a state where the substrate temperature is high, that is, in the upper left region of the line 37L corresponding to the As supply amount lower limit value, the As divergence proceeds. The crystalline state of the layer becomes poor. In the state where the As supply amount is higher than the line 37U corresponding to the As supply amount upper limit value or the substrate temperature is low, that is, in the lower right region of the line 37U corresponding to the As supply amount upper limit value, As is excessive. Therefore, from the viewpoint of applying the AlGaAs layer to a semiconductor device, the surface state is not preferable.

The AlGaAs layer 31 is formed under the conditions of the substrate temperature T ₂ and the As supply amount S ₂ (corresponding to the film formation condition 31P shown in FIG. 2B), and the InGaAs layer 32 is the substrate temperature T ₁ and As supply amount S _1. The film is formed under the conditions (corresponding to the film forming condition 32P shown in FIG. 2B). When raising or lowering the substrate temperature, the suspended condition is controlled so that the substrate temperature and the As supply amount fall between the line 37L corresponding to the As supply amount lower limit value and the line 37U corresponding to the As supply amount upper limit value. It is preferable to do. When the process margin is taken into consideration, the control target value for the interruption condition is set inside the region sandwiched between the line 37L corresponding to the As supply amount lower limit value and the line 37U corresponding to the As supply amount upper limit value. It is preferable.

  In the first embodiment, the interrupting condition is controlled so that the interrupting condition falls between the line 36L corresponding to the target lower limit value of the As supply amount and the line 36U corresponding to the target upper limit value. The line 36L corresponding to the target lower limit value of the As supply amount is set slightly on the As excess side than the line 37L corresponding to the As supply amount lower limit value, and the line 36U corresponding to the target upper limit value is set to the As supply amount upper limit value. It is set slightly on the As underside from the corresponding line 37U.

Hereinafter, an example of a specific control method for the interruption condition will be described. After stopping the formation of the AlGaAs layer 31, while maintaining the As feed amount _{S 2,} the substrate temperature is lowered. In FIG. 2B, the interruption condition moves downward starting from the film formation condition 31P. While the substrate temperature is decreasing, the substrate temperature is measured constantly or at certain time intervals.

When the suspended condition reaches the line 36U corresponding to the target upper limit value of the As supply amount, the As supply amount is decreased until the line 36L corresponding to the target lower limit value is reached. In other words, reducing the As feed amount to _{S 21.} When the substrate temperature further decreases and the interruption condition reaches the line 36U corresponding to the target upper limit value again, the As supply amount is further decreased until the line 36L corresponding to the target lower limit value is reached.

Before suspending conditions reach line 36U corresponding to the target upper limit value, when the substrate temperature reaches T _1, while maintaining the substrate temperature to T _1, reducing the As supply amount to S _1.

  Thus, every time the interrupted condition reaches the line 36U corresponding to the target upper limit value of the As supply amount, the As supply amount is decreased until the line 36L corresponding to the target lower limit value is reached. With this control, the supply amount of As falls between the target lower limit value and the target upper limit value of the As supply amount at the measured substrate temperature. For this reason, it is possible to prevent the deterioration of the crystal state of the surface of the AlGaAs layer 31 when the growth is interrupted.

After the AlGaAs layer 33 is grown, when increasing the substrate temperature from _{T 1} to _{T 2} are, in FIG. 2B, the interruption condition, moves from the condition 32P at the time of film formation until the condition @ 31 P. Specifically, while maintaining the As feed amount S _1, to raise the substrate temperature. Each time the suspended condition reaches the line 36L corresponding to the target lower limit value of the As supply amount, the As supply amount is increased until reaching the line 36U corresponding to the target upper limit value. When the substrate temperature reaches T _2, while maintaining the substrate temperature at T _2, increases the As supply amount to S _2. In this way, by controlling the interruption condition, it is possible to prevent the deterioration of the crystal state of the AlGaAs layer 31 even when the substrate temperature rises.

  In addition, the path | route which moves conditions during interruption from condition 31P to 32P in FIG. 2B, or the reverse is not limited to the path | route demonstrated in the said specific example. The suspended condition may be changed so that the suspended condition falls between the line 36L corresponding to the target lower limit value of the As supply amount and the line 36U corresponding to the target upper limit value. For example, the As supply amount may be continuously changed according to changes in the substrate temperature.

Conventionally, it has been known that an As raw material is supplied during a growth interruption in order to prevent a deviation of As during the growth interruption. However, in Figure 2B, when the substrate temperature is lowered from T ₂ to T _1, when the As supply amount to lower the substrate temperature maintained in the S ₂ to T _1, interrupted condition, As the supply amount upper limit value Crossing the line 37U corresponding to is out of the preferred range. In the first embodiment, the interruption condition can be prevented from deviating from the preferred range.

In FIG. 3, the measurement result of the noise characteristic of the photoconductive photodetector for evaluation manufactured by the method according to Example 1 is compared with the measurement result of the noise characteristic of the detector having the same structure manufactured by the conventional method. Show. The horizontal axis represents the current passed through the evaluation sample in the unit “A”, and the vertical axis represents the normalized noise current intensity in the unit “A / Hz”. The white symbols in the figure indicate the measurement results of the photodetector produced by the conventional method, and the solid black symbols indicate the measurement results of the photodetector produced by the method of Example 1. The photoconductive photodetector was produced by repeatedly growing n-type AlGaAs layers and light-receiving layers alternately. The n-type AlGaAs layer was grown at a substrate temperature of 600 ° C., and the light receiving layer was grown at a substrate temperature of 400 ° C. The normalized noise current intensity is defined as In ² / I, where In ² is the white noise power per unit frequency when the current I is passed without irradiating the detector with light.

The noise characteristics of the photodetector manufactured by the method according to Example 1 are particularly excellent in a small current region where the element current is 1 × 10 ⁻⁶ A or less, compared to the photodetector manufactured by the conventional method. I understand that. Thus, it is considered that the noise characteristics are excellent because it is difficult to introduce deep impurity levels or impurity contamination into the semiconductor surface exposed during the interruption of growth.

  In Example 1, AlGaAs was exposed on the surface where the growth was interrupted. However, even when other compound semiconductors are exposed, control is performed to change the substrate temperature and the supply amount of the raw material within a preferable range. It is effective to do. In particular, it is effective to control the substrate temperature and the As supply amount when a compound semiconductor containing As as a group V element is exposed. The preferred range of interrupting conditions depends on the surface material that is exposed during the interruption. For this reason, it is preferable to determine the suitable range of the interruption condition shown in FIG. 2B for each material in advance.

  Also, when quantum dots are formed on the surface of a compound semiconductor by the SK mode or when a semiconductor layer is grown on the quantum dots, the growth is interrupted and the substrate temperature is changed. Also in this case, it is effective to control the substrate temperature and the supply amount of the group V element as in the first embodiment.

  In Example 1, as shown in FIG. 2B, the target lower limit value and the target upper limit value of the As supply amount were set for each substrate temperature. However, during the growth interruption, always or at a certain time interval, The semiconductor layer may be observed with a RHEED measuring instrument, and the supply amount of As may be controlled based on the observation result.

In Example 1, the compound semiconductor layer is formed by MBE. However, when the compound semiconductor layer is formed by another method, for example, metal organic chemical vapor deposition (MOCVD), the same method as in Example 1 is used. It is valid. In MOCVD, the As supply amount corresponds to the flow rate of As raw material, for example, arsine (AsH ₃ ).

  With reference to FIGS. 4A to 4C, a method of manufacturing a semiconductor device (photoconductive photodetection element) according to Example 2 will be described.

As shown in FIG. 4A, a GaAs buffer layer 41 having a thickness of 100 nm is formed on a GaAs substrate 40. Further, a lower contact layer 42 of n-type GaAs is formed. A multiple quantum well layer 43 is formed on the lower contact layer 42. An n-type GaAs upper contact layer 44 is formed on the multiple quantum well layer 43. The thickness of each of the lower contact layer 42 and the upper contact layer 44 is 500 nm, and the concentration of Si that is an n-type impurity is 1 × 10 ¹⁸ cm ⁻³ . An impurity other than Si may be used as the n-type impurity.

  FIG. 4B shows a cross-sectional view of the multiple quantum well layer 43. The multiple quantum well layer 43 has a stacked structure in which AlGaAs barrier layers 43A and InGaAs quantum well layers 43B are alternately stacked. The upper surface of the quantum well layer 43B is covered with an AlGaAs coating layer 43C. At the top, the barrier layer 43A is disposed. The number of repetitions of the laminated structure is, for example, 10 quantum well layers 43B.

  As an example, the lowermost barrier layer 43A has a thickness of 50 nm, and the quantum well layer 43B has a thickness of 5 nm. The thickness of the covering layer 43C is 5 nm, and the thickness of the barrier layer 43A in contact with the covering layer 43C is 45 nm. The Al composition ratio of the barrier layer 43A and the coating layer 43C is, for example, 0.15.

  The growth temperature of the barrier layer 43A is, for example, 600 ° C., and the growth temperature of the quantum well layer 43B and the covering layer 43C is, for example, 500 ° C. The coating layer 43C grown at a temperature lower than that of the barrier layer 43A is for preventing the In dissociation in the quantum well layer 43B. Therefore, when the growth temperature of the semiconductor layer to be grown on the quantum well layer 43B is set to a level that does not cause the In dissociation, it is not necessary to form the covering layer 43C.

The quantum well layer 43B may be doped with about 8.5 × 10 ¹⁷ cm ^{−3 of} Si, which is an n-type impurity, for supplying electrons.

  After the growth of the barrier layer 43A, the substrate temperature is lowered from 600 ° C. to 500 ° C. when the growth is interrupted before the growth of the quantum well layer 43B. After the growth of the covering layer 43C, the substrate temperature is raised from 500 ° C. to 600 ° C. when the growth is interrupted before the growth of the barrier layer 43A. When raising or lowering the substrate temperature, the interruption condition is set in a region between the line 36L corresponding to the target lower limit value of As supply amount and the line 36U corresponding to the target upper limit value shown in FIG. Control to fit.

  As shown in FIG. 4C, a part of the lower contact layer 42 is exposed by etching a part of the multiple quantum well layer 43 and the upper contact layer 44. Electrodes 45 and 46 are formed in the exposed regions of the upper contact layer 44 and the lower contact layer 42, respectively. For the electrodes 45 and 46, for example, AuGe is used.

  The photoconductive photodetector according to Example 2 has sensitivity in the infrared wavelength region. When the growth is interrupted, the substrate temperature and the As supply amount are controlled so as not to depart from the preferred ranges, as in the case of the first embodiment, and this is caused by impurities on the semiconductor surface exposed when the growth is interrupted. A decrease in noise characteristics can be suppressed.

  In Example 2, the method for controlling the substrate temperature and As supply amount according to Example 1 was applied to the manufacture of a photodetector having a multiple quantum well structure using quantum wells in the light absorption layer. The control method according to the first embodiment is also effective in a photodetector having another structure that uses the transport process of carriers from the electrode to the light absorption layer, for example, a photodetector having a quantum dot structure or a quantum wire structure.

  With reference to FIG. 5A and FIG. 5B, the manufacturing method of the semiconductor device (high electron mobility transistor: HEMT) by Example 3 is demonstrated.

  As shown in FIG. 5A, the GaAs substrate 50 is carried into the preparation chamber of the MBE apparatus, and degassing processing is performed. Thereafter, it is carried into the chamber 10 of the MBE apparatus shown in FIG. By heating the GaAs substrate 50 in an As atmosphere, the oxide film on the surface is removed.

  A GaAs buffer layer 51 is grown on the GaAs substrate 50. The substrate temperature during growth is 600 ° C., and the thickness of the buffer layer 51 is, for example, 100 nm. By growing the buffer layer 51, the flatness of the surface is improved.

  After forming the buffer layer 51, the growth is temporarily interrupted, and the substrate temperature is lowered to 500 ° C. At this time, the substrate temperature and As supply amount are controlled in the same manner as in the first embodiment. Specifically, the substrate temperature and the As supply amount are in a preferable range shown in FIG. 2B, that is, a region between the line 36L corresponding to the target lower limit value of the As supply amount and the line 36U corresponding to the target upper limit value. Both are controlled so as to fit in

  An undoped InGaAs channel layer 52 is grown at a substrate temperature of 500 ° C. The thickness of the channel layer 52 is, for example, 15 nm. An undoped AlGaAs covering layer 53 is formed on the channel layer 52. The thickness of the coating layer 53 is 5 nm, for example. After the formation of the covering layer 53, the growth is temporarily interrupted, and the substrate temperature is raised to 600 ° C. During this interruption, the substrate temperature and As supply amount are controlled in the same manner as in the first embodiment.

The n-type AlGaAs barrier layer 54 is grown under the condition of the substrate temperature of 600 ° C. For example, the concentration of the n-type impurity in the barrier layer 54 is 2 × 10 ¹⁶ cm ⁻³ and the thickness is 40 nm. An n-type GaAs cap layer 55 is grown on the barrier layer 54. The cap layer 55 is doped with an n-type impurity so that the electron concentration is 2 × 10 ¹⁸ cm ⁻³ . The thickness of the cap layer 55 is 10 nm, for example.

  As shown in FIG. 5B, an opening 55A is formed in the cap layer 55, and the barrier layer 54 is exposed. AuGe ohmic electrodes 56 are respectively formed on the cap layers 55 on both sides of the opening 55A. An Al Schottky gate electrode 57 is formed on the barrier layer 54 exposed in the opening 55A. A HEMT having a pair of ohmic electrodes 56 as a source and a drain is obtained.

  When the growth is interrupted before the InGaAs channel layer 52 is grown, and when the growth is interrupted before the barrier layer 54 is grown, the substrate temperature and the As supply amount are controlled in the same manner as in the first embodiment. For this reason, it is possible to suppress degradation in device performance due to surface impurities exposed at the time of interruption.

  Although the present invention has been described with reference to the embodiments, the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.

DESCRIPTION OF SYMBOLS 10 Chamber 11 Stage 13 Temperature measuring device 14 Exhaust pipe 15A RHEED electron gun 15B Diffraction beam detector 16 Heater 20 Raw material supply apparatus 21 Supply amount control part 25 Control apparatus 28 Growth substrate 30 GaAs substrate 31 AlGaAs layers 31P and 32P Film formation Condition 32 InGaAs layer 33, 34 AlGaAs layer 36U Line 36L corresponding to the target upper limit value of As supply amount Line 37U corresponding to the target lower limit value of As supply amount Lower limit of line 37L As supply amount corresponding to the upper limit value of As supply amount Line 40 corresponding to the value GaAs substrate 41 Buffer layer 42 Lower contact layer 43 Multiple quantum well layer 43A Barrier layer 43B Quantum well layer 43C Cover layer 44 Upper contact layer 45, 46 Electrode 50 GaAs substrate 51 Buffer layer 52 Channel layer 53 Cover layer 54 Barrier layer 55 Cap layer 56 Oh Click electrode 57 Schottky gate electrode

Claims (7)

Growing a first semiconductor, which is a group III-V compound semiconductor, on a substrate at a first substrate temperature;
A second substrate temperature different from the first substrate temperature while stopping the growth of the first semiconductor and supplying a Group V element source to the surface of the first semiconductor. A process of changing to
Growing a second semiconductor, which is a group III-V compound semiconductor different from the first semiconductor, on the first semiconductor at the second substrate temperature;
Changing the temperature of the substrate from the first substrate temperature to the second substrate temperature;
Measuring the temperature of the substrate;
And a step of controlling the supply amount of the group V element so that the supply amount falls within a target lower limit value and a target upper limit value of the supply amount at the measured substrate temperature.   The first semiconductor and the second semiconductor contain As as a group V element, and the As supply amount is controlled in the step of changing the temperature of the substrate from the first substrate temperature to the second substrate temperature. A method for manufacturing a semiconductor device according to claim 1.   3. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of growing the first semiconductor and the second semiconductor, the first semiconductor and the second semiconductor are grown by molecular beam epitaxy.   The step of changing the temperature of the substrate from the first substrate temperature to the second substrate temperature is performed when the As supply amount reaches a target upper limit value of the As supply amount at the measured substrate temperature. The manufacturing method of the semiconductor device of any one of Claim 1 thru | or 3 including the process to reduce. A chamber containing a growth substrate;
A raw material supply device for supplying a group III element raw material and a group V element raw material in a controlled supply amount into the chamber;
A temperature measuring device for measuring the temperature of the growth substrate housed in the chamber;
For each substrate temperature, the target lower limit value and the target upper limit value of the supply amount of the group V element are stored, and based on the measurement result by the temperature measuring device, the supply amount of the group V element is the target lower limit value and the target upper limit value. A semiconductor manufacturing apparatus having a control device for controlling the raw material supply device so as to fall between values. Growing a first semiconductor, which is a group III-V compound semiconductor, on a substrate at a first substrate temperature;
While the growth of the first semiconductor is stopped and the source of the group V element is supplied to the surface of the first semiconductor, the temperature of the substrate is set to a second substrate temperature different from the first substrate temperature. A process of changing to
Growing a second semiconductor, which is a group III-V compound semiconductor different from the first semiconductor, on the first semiconductor at the second substrate temperature;
In the step of changing the temperature of the substrate from the first substrate temperature to the second substrate temperature, while observing the first semiconductor by a reflection high-energy electron diffraction method, based on the observation result, a group V element material Of manufacturing a semiconductor device for controlling the supply amount of the semiconductor. A chamber containing a growth substrate;
A raw material supply device for supplying a group III element raw material and a group V element raw material in a controlled supply amount into the chamber;
A semiconductor film measuring instrument for measuring a semiconductor film formed on a growth substrate housed in the chamber by reflection high energy electron diffraction;
A semiconductor manufacturing apparatus comprising: a control device that controls the raw material supply device based on a measurement result of the semiconductor film measuring instrument.

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