JP2010219363A - Substrate heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To make an apparatus compact and to increase the number of substrates to be stored by reducing the arrangement space of a heat treatment plate as much as possible, and to improve the flexibility and throughput of a flow passage of a heating medium. <P>SOLUTION: In the substrate heat treatment apparatus including the heat treatment plate, for example, a cooling plate 14 for heat-treating a semiconductor wafer to predetermined temperature while mounted with the wafer, the cooling plate 14 includes: a cooling plate body 64 which is formed by stacking a plurality of thin plates 1 made of a thermally conductive material through, for example, diffusion bonding, and has a supply flow passage 61a and a discharge flow passage 62a of the heating medium, a refrigerant flow passage 63, and a hole 64f for suction formed by stacking the thin plates 1. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate heat treatment apparatus such as a semiconductor wafer or a flat panel display substrate (FPD substrate).

  In general, in photolithography technology, a photoresist is applied to a substrate, a resist film formed thereby is exposed according to a predetermined circuit pattern, and a desired circuit pattern is formed on the resist film by developing this exposure pattern. It is performed by a series of steps to form.

  Such processing is generally performed by applying a resist coating processing unit for applying a resist solution to a substrate, processing a substrate after completion of resist coating processing or a substrate after exposure processing, and a substrate after heating processing. A cooling processing unit for cooling processing to a temperature, a developing processing unit for supplying a developing solution to the substrate and developing the substrate, etc. are provided in a state where they are individually stacked in a plurality of stages. The conveyance and the loading / unloading of the substrate are performed by the substrate conveying means.

  As a conventional substrate processing apparatus of this type, a carrier block that arranges a carrier that can accommodate a plurality of substrates, and a processing block that includes the processing unit that applies a resist coating / developing process to the substrate taken out of the carrier, The substrate block is disposed in the carrier block and the processing block, and the substrate transfer means can move the substrate in the vertical direction and the horizontal direction. The substrate block is disposed between the carrier block and the processing block, and a plurality of substrates can be placed thereon. In addition, there is known a substrate heat treatment apparatus including a substrate storage unit having a cooling plate that waits and precools a substrate before cooling the substrate to a predetermined temperature (see, for example, Patent Document 1). ).

  According to the substrate processing apparatus described in Patent Document 1, a plurality of processing units are provided in order to efficiently transport a substrate in accordance with the time difference between the processing times of the substrates in each processing unit and improve throughput. A substrate storage unit having a plurality of stages that can store a plurality of substrates is provided between the processing block and the interface block or in the interface block, and different substrate transports are performed with respect to the substrate storage unit from two directions of the substrate storage unit. The substrate can be delivered by means.

  In general, as a means for forming a flow path of the refrigerant fluid in the cooling plate, a structure in which a cooling pipe is provided in a cooling pipe storage conduit provided in the plate body is known (for example, Patent Document 2). reference). As a structure similar to the technique described in Patent Document 2, a cooling pipe housing groove is provided on the back surface of the cooling plate, and a cooling pipe made of, for example, copper or aluminum, which is rich in thermal conductivity and easily bent and deformed, is provided in the cooling pipe housing groove. Can be provided to form a flow path for the refrigerant fluid.

JP 2007-288029 A (Claims, FIG. 1) JP 11-233520 A (Claims, FIG. 1)

  However, in the apparatus described in Patent Document 1, a plurality of (for example, three) support pins are erected up and down on a cooling plate disposed in the substrate storage unit, and the substrate is supported by these support pins. The substrate is transferred to and from the substrate transfer means. Therefore, there is a concern that it takes time to deliver the substrate. Further, since the height of the cooling plate and the support pins for the support pins is required, there is a problem that the number of cooling plates cannot be increased due to the height of the entire apparatus, and high production cannot be handled. Furthermore, it is necessary to pay attention to maintenance / inspection of the lifting / lowering drive mechanism of the support pin.

  Moreover, in the structure of patent document 2, since the thickness of a cooling pipe is required, the thickness of a cooling plate cannot be made thin. In addition, there is a limit to the bending of the cooling pipe, and there is a problem that it takes time to install the cooling pipe.

  The present invention has been made in view of the above circumstances, and can reduce the arrangement space of the heat treatment plate as much as possible to reduce the size of the apparatus and increase the number of substrates accommodated. An object of the present invention is to provide a substrate heat treatment apparatus capable of improving the degree of freedom of the path and the throughput.

  In order to solve the above-mentioned problem, the invention according to claim 1 is a substrate heat treatment apparatus comprising a heat treatment plate for heat-treating the substrate to a predetermined temperature while holding the placed substrate, the heat treatment plate comprising: A heat medium supply channel, a discharge channel, and a heat medium channel communicating with these channels, each of which is formed by laminating a plurality of thin plates made of a heat conductive material and laminating the thin plates; It has a heat treatment plate body for forming a suction hole.

  According to a second aspect of the present invention, there is provided the substrate heat treatment apparatus according to the first aspect, wherein the thin plate made of a plurality of thermally conductive materials is laminated, and the thin plate is laminated to establish the adsorption heat treatment apparatus. It further comprises a substrate suction plate that forms a suction channel communicating with the hole.

  By configuring in this way, a heat medium supply flow path that is established by opening (processing) holes, slits, and the like in the thin plate constituting the heat treatment plate by laminating a plurality of thin plates, for example, A discharge flow path and a heat medium flow path communicating with these flow paths can be formed. Further, it is possible to form a suction hole and a suction channel communicating with the suction hole.

  According to a third aspect of the present invention, in the substrate heat treatment apparatus according to the first or second aspect, the uppermost layer and the lowermost layer of the heat treatment plate are thin plates made of a material having resistance to strength compared to the thin plate of the inner layer. It is characterized by that.

  By comprising in this way, while being able to give rigidity to a heat processing plate, a plate surface can be made into hardness.

  The invention according to claim 4 is the substrate heat treatment apparatus according to claim 1, wherein the uppermost layer and the lowermost layer of the heat treatment plate main body are thin plates made of a material having strength resistance compared to the inner layer of the thin plate. It is characterized by that.

  By comprising in this way, while being able to give rigidity to the heat processing plate main body and by extension, the heat processing plate, the plate surface can be made into hardness.

  Further, in the present invention, it is preferable that mounting holes are provided at a plurality of locations in the plurality of thin plates on the upper side of the heat treatment plate, and support pins that support the substrate are fitted and erected in the mounting holes. ).

  By comprising in this way, the attachment hole of a support pin can be shape | molded simultaneously with the flow path and suction | inhalation flow path of a heat medium.

  In the present invention, the thin plate can be formed of a copper thin plate (Claim 6), and the uppermost layer and the lowermost layer of the heat treatment plate or the heat treatment plate main body are more resistant to the thin plate of the inner layer. In the case of forming a thin plate made of a material having strength, the uppermost layer and the lowermost layer thin plate can be formed of, for example, a stainless steel, titanium or nickel thin plate, and the thin plate of the inner layer is formed of a copper thin plate. It can be formed (Claim 7).

  In the present invention, the means for laminating and bonding the thin plates may be brazed, but it is preferable that the thin plates are bonded by diffusion bonding. Here, diffusion bonding refers to utilizing the diffusion of atoms generated between the joining surfaces by bringing the materials of the thin plates into close contact with each other and applying pressure to the extent that plastic deformation does not occur as much as possible under temperature conditions below the melting point of the thin plate materials. It is a method of joining.

  Thus, by joining thin plates by diffusion bonding, the laminated portions of the thin plates can be joined in an integrated state.

  In addition, in the present invention, at least a supply port of the supply flow path and the discharge flow path may be connected to a heat medium supply source by a supply pipe line provided with a temperature switching mechanism (claim). Item 9). Here, the switching mechanism refers to a mechanism that switches the temperature of the heat medium supplied to the supply flow path, and can be formed by, for example, a switching valve or a temperature control mechanism.

  With this configuration, the heat treatment temperature of the substrate can be changed, and the heat treatment of the substrate can be easily changed according to the purpose.

  According to this invention, since it is configured as described above, the following remarkable effects can be obtained.

  (1) According to the first, second, and sixth aspects of the invention, since the heat treatment plate having a thin plate thickness in which the heat medium flow path and the suction flow path are integrally formed is provided, a space for arranging the heat treatment plate is possible. By making it as small as possible, it is possible to reduce the size of the apparatus and increase the number of substrates stored. In addition, since the heat medium flow path having a complicated shape can be easily formed, the degree of freedom of the heat medium flow path can be improved, the heat transfer efficiency to the substrate can be improved, and the throughput can be improved. be able to.

  (2) According to the inventions of claims 3, 4 and 7, since the heat treatment plate can be given rigidity and the surface of the plate can be made hard, in addition to (1) above, the heat treatment plate is further provided. By improving the planar accuracy, the accuracy of heat treatment can be improved.

  (3) According to the invention described in claim 5, since the mounting hole of the support pin can be formed simultaneously with the flow path of the heat medium and the suction flow path, the support pin is easily projected on the surface of the heat treatment plate. In addition, the support pins can be positioned with high accuracy.

  (4) According to the invention described in claim 8, since the thin plates constituting the heat treatment plate are joined together by diffusion bonding, the laminated portions of the thin plates can be joined in an integrated state. The flatness of the film can be made highly accurate, and the efficiency of the heat treatment can be improved.

  (5) According to the invention described in claim 9, since the heat treatment temperature of the substrate can be changed and the heat treatment of the substrate can be easily changed according to the purpose, different temperatures are used using the same heat treatment plate. The heat treatment can be performed.

1 is a schematic plan view showing an example of a resist coating / development processing apparatus to which a substrate heat treatment apparatus according to the present invention is applied. It is a schematic perspective view of the said resist application | coating / development processing apparatus. It is the schematic of the said resist application | coating / development processing apparatus, Comprising: It is a schematic block diagram which overlaps and shows only the unit block of a process part in a planar state. It is a schematic perspective view which shows the unit block (DEV layer) of the processing block in the said resist application | coating / development processing apparatus. It is a schematic side view which shows a substrate accommodating part provided with the substrate heat processing apparatus which concerns on this invention. It is a schematic perspective view which shows the said board | substrate accommodating part. It is a schematic plan view showing a unit block (COT layer) of a processing block in the resist coating / developing apparatus. It is a schematic sectional drawing which shows an example of the process unit of the process block in the said resist application | coating / development processing apparatus. It is a side view which shows an example of the cooling plate in this invention. It is sectional drawing which shows the principal part of the cooling plate in this invention. It is a schematic plan view which shows the relationship between the cooling plate main body in this invention, a main arm, and a delivery arm. It is a disassembled perspective view which shows the lamination | stacking state of the base block in this invention, a cooling plate main body, and a board | substrate adsorption | suction plate. It is sectional drawing which shows another lamination state of the cooling plate main body in this invention. It is a schematic sectional drawing which shows the principal part of another embodiment of the substrate heat processing apparatus which concerns on this invention. It is a schematic sectional drawing which shows the principal part of further another embodiment of the substrate heat processing apparatus which concerns on this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Here, a case where the substrate heat treatment apparatus according to the present invention is applied to a semiconductor wafer resist coating / development processing apparatus will be described.

  As shown in FIGS. 1 to 8, the resist coating / developing apparatus includes a carrier block for carrying in and out a carrier 20 in which, for example, 13 semiconductor wafers W (hereinafter referred to as wafers W) are hermetically contained. S1, a processing block S2 configured by vertically arranging a plurality of, for example, five unit blocks B1 to B5, an interface block S3, and an exposure apparatus S4 as a second processing block.

  The carrier block S <b> 1 includes a mounting table 21 on which a plurality of (for example, four) carriers 20 can be mounted, an opening / closing unit 22 provided on a wall surface in front of the mounting table 21, and an opening / closing unit 22. And a transfer arm C for taking out the wafer W from the carrier 20. This transfer arm C has horizontal X and Y directions and vertical Z directions so as to transfer wafers W to and from transfer stages TRS1 and TRS2 provided on a shelf unit U5 that constitutes a substrate storage unit to be described later. It is configured to be freely movable and to be rotatable about the vertical axis.

  A processing block S2 surrounded by a casing 24 is connected to the back side of the carrier block S1. In this example, the processing block S2 is formed on the lower side of the resist film from the lower side to the first and second unit blocks (DEV layers) B1 and B2 for performing development processing on the lower two stages. Third unit block (BCT layer) B3, which is a unit block for forming a first antireflection film for forming an antireflection film (hereinafter referred to as “first antireflection film”), a coating process of a resist solution Processing for forming a fourth unit block (COT layer) B4, which is a unit block for forming a coating film for performing coating, and an antireflection film (hereinafter referred to as "second antireflection film") formed on the upper layer side of the resist film Is assigned as a fifth unit block (TCT layer) B5, which is a second antireflection film forming unit block for performing the above. Here, the DEV layers B1 and B2 correspond to unit blocks for development processing, and the BCT layer B3, COT layer B4, and TCT layer B5 correspond to unit blocks for coating film formation.

  Next, the configuration of the first to fifth unit blocks B (B1 to B5) will be described. Each of these unit blocks B1 to B5 is disposed on the front surface side, and a liquid processing unit for applying a chemical solution to the wafer W, and disposed on the back surface side, before the processing performed in the liquid processing unit. Between the processing units such as various heating units for processing and post-processing, and the liquid processing unit disposed on the front side and the processing units such as the heating unit disposed on the back side, the wafer W Main arms A1, A3 to A5, which are dedicated substrate transfer means for delivering, are provided.

  In this example, the unit blocks B1 to B5 are formed in the same arrangement layout of the liquid processing unit, the processing unit such as a heating unit, and the conveying means between the unit blocks B1 to B5. Here, the same arrangement layout means that the center of the wafer W in each processing unit, that is, the center of the spin chuck that is a holding means of the wafer W in the liquid processing unit, the heating plate and the cooling plate in the heating unit, and so on. It means that the center is the same.

  The DEV layers B1 and B2 are similarly configured, and in this case, are formed in common. As shown in FIG. 1, the DEV layers B1 and B2 are substantially at the center of the DEV layers B1 and B2, and in the length direction of the DEV layers B1 and B2 (Y direction in the figure), the carrier block S1 and the interface block S3. A transfer area R1 (horizontal movement area of the main arm A1) for the wafer W is formed.

  On both sides of the transport region R1 viewed from the carrier block S1 side, a plurality of development processes for performing the development process as the liquid processing unit on the right side from the front side (carrier block S1 side) to the back side. For example, two stages of developing units 31 having a section are provided. Each unit block is provided with, for example, four shelf units U1, U2, U3, U4 in which heating units are multi-staged in order from the front side to the left side. The various units for performing the pre-processing and post-processing of the processing performed in the above are stacked in a plurality of stages, for example, three stages. In this way, the developing unit 31 and the shelf units U1 to U4 are partitioned by the transport region R1, and the cleaning air is ejected and exhausted to the transport region R1, thereby suppressing the floating of particles in the region. It has become.

  Among the various units for performing the above pre-processing and post-processing, for example, as shown in FIG. 4, a heating unit (PEB1) called a post-exposure baking unit that heat-processes the wafer W after exposure. In addition, a heating unit (POST1) called a post-baking unit or the like for performing heat treatment to remove moisture of the wafer W after development processing is included. Each processing unit such as the heating unit (PEB1, POST1) is accommodated in a processing container 51, and the shelf units U1 to U4 are configured by stacking the processing containers 51 in three stages. A wafer loading / unloading port 52 is formed on the surface facing the transfer region R1.

  The main arm A1 is provided in the transfer region R1. This main arm A1 is used for all modules in the DEV layer B1 (where the wafer W is placed), for example, each processing unit of the shelf units U1 to U4, developing unit 31, and each part of the shelf unit U5. For this purpose, it is configured to be movable in the horizontal X and Y directions and the vertical Z direction, and to be rotatable about the vertical axis.

  The unit blocks B3 to B5 for forming the coating film are all configured in the same manner, and are configured in the same manner as the unit blocks B1 and B2 for development processing described above. Specifically, the COT layer B4 will be described as an example with reference to FIGS. 3, 7, and 8. As a liquid processing unit, a coating unit 32 for performing a resist liquid coating process on the wafer W is provided. The shelf units U1 to U4 of the COT layer B4 include a heating unit (CLHP4) that heat-treats the wafer W after application of the resist solution, and a hydrophobic treatment unit (ADH) that improves the adhesion between the resist solution and the wafer W. ), And is configured in the same manner as the DEV layers B1 and B2. That is, the coating unit 32, the heating unit (CLHP4), and the hydrophobizing unit (ADH) are configured to be partitioned by the transfer region R4 of the main arm A4 (horizontal movement region of the main arm A4). In the COT layer B4, the wafer W is delivered to the delivery stage TRS1 of the shelf unit U5, the coating unit 32, and the processing units of the shelf units U1 to U4 by the main arm A4. It has become. The hydrophobic treatment unit (ADH) performs gas treatment in an HMDS atmosphere, but may be provided in any one of the unit blocks B3 to B5 for forming a coating film.

  The BCT layer B3 is provided with a first antireflection film forming unit 33 for performing a first antireflection film forming process on the wafer W as a liquid processing unit. A heating unit (CLHP3) for heat-treating the wafer W after the antireflection film formation processing is provided, and is configured in the same manner as the COT layer B4. That is, the first antireflection film forming unit 33 and the heating unit (CLHP3) are configured to be partitioned by the transport area R3 of the main arm A3 (horizontal movement area of the main arm A3). And in this 3rd unit block B3, with respect to each delivery unit TRS1 of shelf unit U5, the 1st antireflection film formation unit 33, and each processing unit of shelf units U1-U4 by main arm A3, The delivery of the wafer W is performed.

  The TCT layer B5 is provided with a second antireflection film forming unit 34 for performing a second antireflection film forming process on the wafer W as a liquid processing unit. The configuration is the same as that of the COT layer B4 except that it includes a heating unit (CLPH5) for heating the wafer W after the antireflection film forming process and a peripheral exposure device (WEE). That is, the second antireflection film forming unit 34, the heating unit (CLHP5), and the peripheral exposure device (WEE) are configured to be partitioned by the transport region R5 of the main arm A5 (horizontal movement region of the main arm A5). Yes. In the TCT layer B5, the main arm A5 causes the wafer W to be transferred to the delivery stage TRS1 of the shelf unit U5, the second antireflection film forming unit 34, and the processing units of the shelf units U1 to U4. Delivery is to be performed.

  Further, in the processing block S2, a shuttle arm A, which is a substrate transfer means for delivering the wafer W between the delivery stage TRS2 provided in the shelf unit U5 and the shelf unit U6 on the interface block S3 side, has a horizontal Y direction. It can be moved freely and can be moved up and down in the vertical Z direction.

  The transfer area of the shuttle arm A and the transfer areas R1, R3 to R5 of the main arms A1, A3 to A5 are partitioned.

  Further, the area between the processing block S2 and the carrier block S1 is a transfer area R2 for the wafer W. In this area R2, as shown in FIG. 1, the transfer arm C and the main arms A1, A3 to A3. A shelf unit U5, which is a substrate storage unit, is provided at a position accessible by A5 and the shuttle arm A, and a delivery arm D serving as a substrate delivery means for delivering the wafer W to the shelf unit U5 is provided. . In this case, the shelf unit U5 is disposed on the axis of the horizontal movement direction (Y direction) of the main arms A1, A3 to A5 and the shuttle arm A, and the main arms A1, A3 to A5 and the forward and backward movement directions of the shuttle arm A A first opening 11 is provided in the (Y direction), and a second opening 12 is provided in the forward / backward direction (X direction) of the delivery arm D.

  Further, as shown in FIGS. 3, 5 and 6, the shelf unit U5 delivers the wafer W between the main arms A1, A3 to A5 and the shuttle arm A of each of the unit blocks B1 to B5. In addition, for example, two delivery stages TRS1 and TRS2 are provided, and storage blocks 10a to 10d divided into a plurality of units corresponding to the unit blocks B1 to B5 are provided, and a plurality of storage blocks 10a to 10d are provided. In order to adjust the wafer W to a predetermined temperature before the application of the mounting shelf 13 and the resist, to adjust the wafer W to a predetermined temperature before the antireflection film forming process, and to heat the wafer W heated after the exposure process. The cooling plate 14 (CPL1-CPL6) which is the heat processing plate in this invention for adjusting to predetermined temperature is provided.

  In this case, the first storage block 10a corresponds to the first and second unit blocks B1 and B2 (DEV layer), the second storage block 10b corresponds to the third unit block B3 (BCT layer), and the third The storage block 10c corresponds to the fourth unit block B4 (COT layer), and the fourth storage block 10d corresponds to the fifth unit block B5 (TCT layer).

  The cooling plate 14A (CPL7, CPL8) disposed in the first storage block 10a is horizontally provided on a holding plate 17 installed on the frame 16 via a support column 17a. The cooling plate 14A (CPL7) , CPL8), three support pins 15 are provided upright. The cooling plate 14A (CPL7, CPL8) has a function of transferring the wafer W between the main arm A1 and the transfer arm D.

  Further, the cooling plate 14 (CPL1 to CPL6) includes a supply flow path 61 and a discharge flow path 62 of a coolant fluid as a heat medium, for example, constant temperature cooling water, as shown in FIGS. 6, 9, 10 and 12. One or a plurality of (two are shown in the figure) cooling plates each having a base block 60 and a refrigerant channel 63 stacked on top of the base block 60 and communicating with the supply channel 61 and the discharge channel 62 A main body 64, a substrate suction plate 67 integrally formed on the lower surface of the cooling plate main body 64, and a connecting member that connects the base block 60, the cooling plate main body 64 and the substrate suction plate 67 in a detachable manner, that is, a connection bolt 66. It has. In addition, although the cooling plate 14 can use the thing of the water cooling system which circulates constant temperature cooling water, systems other than a water cooling system may be used.

  In this case, the base block 60 is formed of a stainless steel member, for example, and is formed of a substantially cube with one corner cut. On one side of the base block 60, a supply port 60a connected to a supply pipe 71 connected to a cooling water supply source (not shown), a discharge port 60b connected to a discharge pipe 72, and a suction means (not shown) such as a vacuum pump are connected. A suction port 60c to which the suction pipe 73 to be connected is connected is provided. Further, a supply channel 61 communicating with the supply port 60 a and a discharge channel 62 communicating with the discharge port 60 b are provided in parallel in the vertical direction so as to open on the upper surface of the base block 60. An O-ring (not shown), which is a seal member, is provided at the opening ends of the supply flow path 61 and the discharge flow path 62.

  The cooling plate main body 64 is formed of, for example, a copper member. As shown in FIGS. 10 and 12, the substantially rectangular mounting base 64a having the same shape as the upper surface of the base block 60, and the mounting base 64a. And a disc portion 64c formed at the tip of the arm portion 64b protruding outward from the corner portion. The mounting base portion 64a of the cooling plate body 64 is provided with a supply flow passage 61a that communicates with the supply flow passage 61 of the base block 60, and the arm portion 64b and the disc portion 64c have a refrigerant flow that communicates with the supply flow passage 61a. A passage 63 is provided, and a discharge passage 62 a communicating with the discharge passage 62 of the base block 60 is provided in the disc portion 64 c.

  Further, a plurality of, for example, five locations on the upper surface of the disk portion 64c of the cooling plate body 64 are support pins that support the wafer W with a slight gap, for example, 50 μm to 100 μm between the surface of the disk portion 64c. Proximity pins 64e are fitted and protruded into mounting holes 64h described later. In addition, suction holes 64f are formed at four positions in the disk portion 64c where the refrigerant flow path 63 is avoided. Also, mounting holes 75 through which the connecting bolts 66 are inserted are provided at four locations on the side of the mounting base 64a.

  In this case, the cooling plate main body 64 is formed by laminating a plurality of, for example, 10 copper thin plates 1 having a thickness of, for example, 0.5 mm, and is laminated on the copper thin plate 1 constituting the substrate suction plate 67 described later to be diffusion bonded. Are bound by. That is, a hole, a slit, or the like that constitutes a part of the attachment hole 64h of the supply channel 61a, the discharge channel 62a, the refrigerant channel 63, the suction hole 64f, or the proximity pin 64e is opened (processed) in advance by an etching process. The copper thin plate 1 and the copper thin plate 1 having no holes, slits, or the like are brought into close contact with each other, pressed under a temperature condition equal to or lower than the melting point of copper to the extent that plastic deformation does not occur as much as possible, and diffusion of atoms generated between the joining surfaces. They are joined by the diffusion joining method of joining using. In addition, in the laminated structure of the copper thin plate 1 as described above, if there is a portion where pressure cannot be applied during diffusion bonding, the bonding strength decreases. Therefore, the flow path wall 2 needs to secure at least 5 mm of the joining margin S. Yes (see FIG. 10). In the case of the copper cooling plate main body 64, the plate thickness T on the flow path needs to be at least 1 mm in order to suppress copper softening during diffusion bonding (see FIG. 10).

  In the above description, the cooling plate body 64 has been described with respect to a case where only a plurality of copper thin plates 1 are laminated and bonded by diffusion bonding. However, as shown in FIG. 13, the uppermost and lowermost thin plates 1a, 1b may be formed of a material having resistance to strength as compared with the inner thin plate 1c, for example, a thin plate made of stainless steel, titanium, or nickel. In this way, the uppermost and lowermost thin plates 1a and 1b of the cooling plate main body 64 are formed of a material having strength resistance compared to the inner thin plate 1c, whereby the strength of the cooling plate main body 64 and thus the cooling plate 14 is increased. In addition, the accuracy of the heat treatment can be improved by improving the planar accuracy. In this case, although the thermal expansion coefficient of stainless steel, titanium, or nickel is different from that of copper, the strain at the time of diffusion bonding can be suppressed by arranging the thin plates 1a, 1b made of stainless steel, titanium, or nickel vertically. .

  Further, main arm main arms A1, A3 to A5 (hereinafter, represented by reference numeral A1) entering from the first opening 11 of the shelf unit U5 are provided at six locations on the outer periphery of the disc portion 64c of the cooling plate body 64. In addition, a notch 64g is provided for avoiding the interference of the up-and-down movement when the delivery arm D entering from the second opening 12 of the shelf unit U5 delivers the wafer W to the cooling plate 14 (FIG. 11). In this case, the arm main body 90 of the delivery arm D is formed in a deformed horseshoe shape in which one curved arm piece 91 extends from the other curved arm piece 92 to the distal end side, and the distal end side of both arm pieces 91 and 92 Supporting claws 93 for supporting the wafer W are provided at three locations on the lower part and the lower part on the base side of the arm main body 90. In addition, the arm main body 80 of the main arm A1 is provided with support claws 83 for supporting the wafer W at four locations on the lower end side of the pair of curved arm pieces 81 and 82 projecting in a horseshoe shape and on the lower base side of the arm main body 80. ing. The six notches 64g provided on the outer periphery of the disc portion 64c of the cooling plate main body 64 are provided corresponding to the support claws 83 of the main arm A1 and the support claws 93 of the delivery arm D.

  Thus, by providing the notch 64g on the outer periphery of the disc portion 64c of the cooling plate main body 64, the wafer W of the main arm A1 and the delivery arm D can be delivered to the cooling plate 14 without requiring support pins. it can.

  The substrate suction plate 67 is formed of a copper member, for example, and as shown in FIGS. 10 and 12, a substantially rectangular mounting base 67a having the same shape as the upper surface of the base block 60, and a mounting base 67a. It is comprised with the substantially circular adsorption | suction part 67c formed in the front-end | tip of the arm part 67b which protrudes outward from the corner | angular part. The attachment base 67 a is provided with a supply flow path 61 a that communicates with the supply flow path 61 of the base block 60, and a discharge flow path 62 a that communicates the discharge flow path 62 of the base block 60 and the refrigerant flow path of the cooling plate body 64. It has been.

  Note that mounting holes 75 through which the connecting bolts 66 are inserted are provided at four locations on the side of the mounting base 67 a of the substrate suction plate 67. In addition, the substrate suction plate 67 is provided with a suction channel 67 d that communicates with a suction port 60 c provided in the base block 60 and communicates with a suction hole 64 f provided in the cooling plate main body 64.

  In this case, similarly to the cooling plate body 64, the substrate suction plate 67 is formed by stacking a plurality of, for example, 10 copper thin plates 1 having a thickness of 0.5 mm, for example, and the copper thin plate 1 constituting the cooling plate main body 64. And bonded by diffusion bonding. That is, the copper thin plate 1 in which a hole, a slit, or the like constituting a part of the suction channel 67d communicating with the suction hole 64f in advance by etching is opened (processed), and the copper thin plate 1 having no hole, a slit, or the like are connected to each other. Bonding is performed by a diffusion bonding method in which pressure is applied to the extent that plastic deformation does not occur as much as possible under a temperature condition equal to or lower than the melting point of copper, and bonding is performed using diffusion of atoms generated between the bonding surfaces.

  Note that the uppermost and lowermost thin plates of the laminated cooling plate main body 64 and the substrate adsorption plate 67 are made of a material having resistance to strength compared to the inner thin plate, for example, a thin plate made of stainless steel, titanium, or nickel. Also good. Further, the uppermost and lowermost thin plates of the cooling plate body 64 and the lowermost thin plate of the substrate suction plate 67 are formed of a material having resistance to strength compared to the inner thin plate, for example, a thin plate made of stainless steel, titanium, or nickel. May be. By forming in this way, distortion at the time of diffusion bonding can be suppressed, the cooling plate 14 can be given strength, and the accuracy of heat treatment can be improved by improving the planar accuracy.

  When the cooling plates 14 are stacked in a plurality of stages, as shown in FIG. 9 and FIG. 12, the upper cooling plate 14, that is, the back surface is interposed on the upper surface of the mounting base portion 64 a of the lower cooling plate body 64 with a spacer 76 interposed. The cooling plate main body 64 integrally formed with the substrate suction plate 67 can be laminated. In this case, like the base block 60, the spacer 76 is formed in a substantially cubic shape with one corner cut, and the supply flow path 61a and the discharge flow path 62a of the cooling plate main body 64 located immediately below the spacer 76. A supply flow path 61b and a discharge flow path 62b that communicate with each other are provided, and attachment holes (not shown) through which the connection bolts 66 are inserted are provided at four positions on the side. In addition, an O-ring (not shown) serving as a seal member is provided between the supply flow path 61b and the discharge flow path 62b of the spacer 76 between the lower cooling plate body 64 and the upper substrate suction plate 67. ) Is interposed, and the air-water tightness of the supply flow path 61 and the discharge flow path 62 is maintained. The spacer 76 is provided with a suction port 60c through which the suction channel 67d of the substrate suction plate 67 communicates.

  In the above description, the case where the plurality of cooling plates 14 are stacked via the spacers 76 has been described. However, the structure in which the spacers 76 are integrally formed on the mounting base portion 64 a of the cooling plate body 64 or the mounting base portion 67 a of the substrate suction plate 67. It is good.

  The base block 60 of the cooling plate 14 configured as described above, the supply pipe 71 and the discharge pipe 72 connected to the supply flow path 61 and the discharge flow path 62 provided in the base block 60, and the base block 60 are provided. The suction pipe 73 connected to the suction port 60c is integrally fixed to the base plate. A mounting bracket 78 for fixing the base plate 77 to the frame body 16 is provided at one side end lower portion of the base plate 77, and the base plate 77 is fixed to the frame body 16 by mounting bolts 79. .

  The base plate 77 in which the cooling plate 14 is integrated in this way is attached to the frame body 16 constituting the shelf unit U5, which is a substrate storage unit, so that it can be pulled out. Therefore, since the cooling plate 14 can be attached to the shelf unit U5 so as to be able to be pulled out, it is possible to improve maintenance such as replacement of the cooling plate 14 and maintenance / inspection.

  As shown in FIG. 6, the mounting shelf 13 is formed by a plurality of plate-like arms 13 a that enter the shelf unit U <b> 5 from one side of the shelf unit U <b> 5. In this case, the plate-like arm 13a includes, for example, a bifurcated portion 13b branched at an angle of about 120 ° at the tip, and a concentric circle at the tip of the plate-like arm 13a including the bifurcated portion 13b. Proximity pins 18a, 18b, and 18c for supporting the wafer W with a slight gap, for example, about 0.5 mm from the surface of the plate-like arm 13a are projected at three divided locations, and one of the first pins is provided. 18a is arranged in parallel to the direction in which the delivery arm D enters the shelf unit U5.

  In the above description, the plate-like arm 13a of the mounting shelf 13 has been described as having a bifurcated portion 13b. However, the arm main body 80 and the second opening of the main arm entering from the first opening 11 are explained. As long as the arm main body 90 of the delivery arm D entering from 12 does not interfere, it may have an arbitrary shape, for example, a circular shape.

  The plate-like arm 13a is provided so that one end is attached to a part of the frame 16 of the shelf unit U5 and enters the shelf unit U5 from one side of the shelf unit U5. The base ends of 13a are connected and fixed in a detachable manner in a stacked manner by connecting members such as connecting bolts (not shown) via spacers 19. In this way, by connecting and fixing the plate-like arms 13a constituting the placement shelf 13 in a detachable manner by connecting bolts, the number of stages of the placement shelf 13, that is, the plate-like arms, corresponding to the processing schedule and processing time. The increase / decrease of the number of 13a can be made easy.

  In addition, as shown in FIG. 5, it is comprised so that the clean gas of predetermined flow volume may be supplied in the shelf unit U5 from the carrier block S1 side of the shelf unit U.

  As shown in FIG. 11, the delivery arm D is configured such that the arm main body 90 having the curved arm pieces 91 and 92 and the support claws 93 is movable forward and backward with respect to the shelf unit U5, and a moving mechanism (not shown). 3) can be moved up and down in the vertical Z direction. In this way, the arm main body 90 is configured to be movable back and forth and up and down in the X direction so that the wafer W can be transferred between the storage blocks 10a to 10d of the shelf unit U5 and the transfer stage TRS1. It has become. Driving of such a delivery arm D is controlled by a controller (not shown) based on a command from the control unit 100 described later.

  The main arms A1, A3 to A5 and the shuttle arm A are basically configured in the same manner. The shuttle arm A will be described as a representative example. The disk portion 64c of the cooling plate main body 64 and the plate of the mounting shelf 13 are described. A horseshoe-shaped arm body 80 having a pair of curved arm pieces 81 and 82 that do not interfere with the proximity pins 18a, 18b, and 18c provided on the arm 13a, and the distal ends of the curved arm pieces 81 and 82, Support claws 83 for supporting the wafer W are provided at four locations on the lower side on the base end side.

  Accordingly, as in the case of the delivery arm D, the arm main body 80 of the shuttle arm A moves in the vertical direction in the space between the mounting shelves 13, and the proximity pins 18 a, 18 b, 18 c of the mounting shelf 13. Therefore, it is possible to provide a minimum space in which the wafers W can be delivered, so that many mounting shelves 13 can be provided in the limited space. Further, since the shuttle arm A is provided with the support claws 83 at three positions of the horseshoe-shaped arm main body 80, the wafer W can be supported and transferred in a stable state.

  The intervals between the plurality of mounting shelves 13 are formed narrower than the thickness of the arm main body 90 of the delivery arm D and the thickness of the arm main body 80 of the main arm A. As a result, the storage space of the shelf unit U5 can be reduced as much as possible, and the number of wafers W stored in the shelf unit U5 can be increased, or the apparatus can be downsized when the number of wafers W stored is small. I can plan.

  The main arm A1 (A3 to A5) is configured in the same manner, and as shown in FIG. 4, a moving mechanism 85 for moving along the rotation drive mechanism 84, the horizontal guide rail 86, and the vertical guide rail 87. Can be moved forward and backward in the X direction, movable in the Y direction, freely movable up and down, and rotatable about the vertical axis. The wafer W can be moved between each of the shelf units U1 to U6, the delivery stage TRS1, and the liquid processing unit. It can be handed over. The driving of the main arm A1 is controlled by a controller (not shown) based on a command from the control unit 100. Further, in order to prevent heat storage in the heating unit of the main arm A1 (A3 to A5), the order of receiving the wafers W can be arbitrarily controlled by a program.

  Further, in the area adjacent to the processing block S2 and the interface block S3, as shown in FIGS. 1 and 3, a shelf unit U6 is provided at a position where the main arm A1 and the shuttle arm A can access. As shown in FIG. 3, the shelf unit U6 transfers two wafers W to and from the main arm A1 of each DEV layer B1, B2. In this example, each DEV layer B1, B2 has two DEV layers B1, B2. A delivery stage TRS3 is provided.

  Similarly to the shelf unit U5, the upper portion of the shelf unit U6 is, for example, 2 to transfer the wafer W between the main arms A1, A3 to A5 and the shuttle arm A of the unit blocks B1 to B5. Each of the storage blocks 10e to 10h is provided with a plurality of storage blocks 10e to 10h. The storage blocks 10e to 10h include a plurality of mounting shelves. 13 and a cooling plate 14 (CPL9 to CPL16) for adjusting the wafer W to a predetermined temperature after the antireflection film forming process or adjusting the wafer W heated after the exposure process to a predetermined temperature, and a buffer A mounting shelf 13 is provided.

  In this case, the first storage block 10e corresponds to the first and second unit blocks B1, B2 (DEV layer), the second storage block 10f corresponds to the third unit block B3 (BCT layer), and the third The storage block 10g corresponds to the fourth unit block B4 (COT layer), and the fourth storage block 10h corresponds to the fifth unit block B5 (TCT layer).

  A delivery arm E having the same structure as the substrate delivery arm D is disposed on the back side in the X direction of the shelf unit U6. The delivery arm E allows the cooling plates 14, 14A of the storage blocks 10e to 10h to be cooled. The wafer W can be delivered to (CPL9 to CPL16) and the mounting shelf 13.

  FIG. 8 shows an example of the layout of these processing units. This layout is for convenience, and the processing units are a heating unit (CLHP, PEB, POST), a hydrophobizing apparatus (ADH), a peripheral edge. In addition to the exposure apparatus (WEE), other processing units may be provided. In an actual apparatus, the number of units installed is determined in consideration of the processing time of each processing unit.

  On the other hand, an exposure apparatus S4, which is a second processing block, is connected to the back side of the shelf unit U6 in the processing block S2 via an interface block S3. The interface block S3 includes an interface arm F for delivering the wafer W to each part of the shelf unit U6 of the DEV layers B1 and B2 of the processing block S2 and the exposure apparatus S4. The interface arm F serves as a means for transporting the wafer W interposed between the processing block S2 and the exposure apparatus S4. In this example, the interface arm F moves the wafer W to the delivery stage TRS3 of the DEV layers B1 and B2. It is configured to be movable in the horizontal X and Y directions and the vertical Z direction, and to be rotatable about the vertical axis so as to perform delivery.

  In the resist coating / development processing apparatus configured as described above, between the unit blocks B1 to B5 stacked in five stages, the transfer arms D and E described above pass through the transfer stages TRS1 to TRS5, respectively. The wafer W can be freely transferred and the wafer W can be transferred between the processing block S2 and the exposure apparatus S4 via the development processing unit blocks B1 and B2 by the interface arm F described above. It is configured to be able to.

  Next, the transfer processing mode of the wafer W in the resist coating / developing apparatus configured as described above will be described with reference to FIGS. 1 to 4, 7 and 8. Here, in the lowermost first storage block 10a of the storage blocks 10a to 10d of the shelf unit U5, two cooling plates CPL7 and CPL8 are arranged, and in the upper second storage block 10b, 2 Two-stage cooling plates CPL1, CPL2 and a plurality of mounting shelves 13 (BUF1) are arranged, and the upper third storage block 10c has two-stage cooling plates CPL3, CPL4 and a plurality of mounting shelves 13 (BUF2). A case where two cooling plates CPL5 and CPL6 and a plurality of mounting shelves 13 (BUF3) are arranged in the upper storage, that is, the uppermost fourth storage block 10d will be described. In addition, two cooling plates CPL9 and CPL10 are disposed in the lowermost first storage block 10e of the storage blocks 10e to 10h of the shelf unit U6, and two stages of cooling are provided in the upper second storage block 10f. Plates CPL11 and CPL12 and a plurality of placement shelves 13 (BUF1) are arranged, and two stages of cooling plates CPL13 and CPL14 and a plurality of placement shelves 13 (BUF2) are arranged in the upper third storage block 10c. A case where two stages of cooling plates CPL15 and CPL16 and a plurality of mounting shelves 13 (BUF3) are arranged in the upper storage, that is, the uppermost fourth storage block 10d will be described.

<Conveying treatment form in which an antireflection film is formed under the resist film>
First, the carrier 20 is carried into the carrier block 21 from the outside, and the wafer W is taken out from the carrier 20 by the transfer arm C. After the wafer W is transferred from the transfer arm C to the transfer arm D, the wafer W is transferred by the transfer arm D to the cooling plate 14 (CPL1) of the second storage block 10b of the shelf unit U5 and placed on the cooling plate CPL1. Then, the temperature is adjusted to a predetermined cooling temperature such as room temperature. Then, it is delivered to the main arm A3 of the BCT layer B3.

  In the BCT layer B3, the first antireflection film forming unit 33 → the heating unit (CLHP3) → the mounting shelf BUF1 of the second storage block 10b of the shelf unit U5 is conveyed by the main arm A3 in the order of the first antireflection film forming unit 33 → the heating unit (CLHP3). An antireflection film is formed. The wafer W mounted on the mounting shelf BUF1 in the second storage block 10b is transferred to the cooling plate CPL3 (CPL4) of the third storage block 10c by the delivery arm D, and mounted on the cooling plate CPL3 (CPL4). The temperature is adjusted to a predetermined temperature (for example, room temperature).

  Subsequently, the wafer W of the third storage block 10c is transported by the main arm A3 in the order of the coating unit 32 → the heating unit CLHP4 → the mounting shelf BUF2 of the third storage block 10c of the shelf unit U5, and the first antireflection. A resist film is formed on the upper layer of the film. The wafer W placed on the placement shelf BUF2 of the third storage block 10c is transferred to the cooling plate CPL3 (CPL4) of the third storage block 10c by the delivery arm D, and placed on the cooling plate CPL3 (CPL4). Then, the temperature is adjusted to a predetermined temperature (for example, room temperature).

  Thereafter, the delivery arm D enters the cooling plate CPL3 (CPL4) of the third storage block 10c of the shelf unit U5, receives the wafer W, and delivers it to the delivery stage TRS2 of the shelf unit U5. Subsequently, the shuttle arm A is transported to the delivery stage TRS5 of the shelf unit U6. Subsequently, the wafer W on the delivery stage TRS5 is transferred to the exposure apparatus S4 by the interface arm F, where a predetermined exposure process is performed.

  The wafer W after the exposure processing is transferred by the interface arm F to the delivery stage TRS3 of the shelf unit U6 → the heating unit (PEB1) → the cooling plate CPL9 (CPL10) of the shelf unit U6 → the developing unit 31 → the heating unit (POST1). A predetermined development process is performed. The wafer W thus developed is transferred to the cooling plate CPL7 (CPL8) of the first storage block 10a of the shelf unit U5 and adjusted to a predetermined temperature in order to deliver the wafer W to the transfer arm C. After that, the transfer arm C returns the original carrier 20 placed on the carrier block S1.

<Conveying treatment mode in which an antireflection film is formed on the upper side of the resist film>
First, the carrier 20 is carried into the carrier block 21 from the outside, and the wafer W is taken out from the carrier 20 by the transfer arm C. The wafer W is transferred to the transfer stage TRS1 of the shelf unit U5 by the transfer arm C, and then transferred to the cooling plate CPL3 of the third storage block 10c of the shelf unit U5 by the transfer arm D. On the cooling plate CPL3 The temperature is adjusted to a predetermined cooling temperature, for example, room temperature. Then, it is delivered to the main arm A4 of the COT layer B4. Then, the wafer W is transferred by the main arm A4 to the cooling plate CPL4 of the third storage block 10c of the hydrophobizing unit (ADH) → the shelf unit U5, and is placed on the cooling plate CPL4 at a predetermined temperature (room temperature). The temperature is adjusted. Next, the wafer W taken out from the shelf unit U5 by the main arm A4 is transferred to the coating unit 32, and a resist film is formed in the coating unit 32. The wafer W on which the resist film is formed is transferred to the heating unit (CLHP4) by the main arm A4, and pre-baked to evaporate the solvent from the resist film. Thereafter, the wafer W is stored on the mounting shelf BUF2 of the third storage block 10c of the shelf unit U5 by the main arm A4 and temporarily stands by.

  Subsequently, the wafer W of the third storage block 10c is transferred to the cooling plate CPL5 (CPL6) of the fourth storage block 10d of the shelf unit U5 by the delivery arm D, and is placed on the cooling plate CPL5 (CPL6) to a predetermined temperature. After the temperature is adjusted to (room temperature), it is transferred by the main arm A5 to the main arm A5 of the TCT layer B5. In the TCT layer B5, the main arm A5 transports the second antireflection film forming unit 34 → the heating unit (CLHP5) → the mounting shelf BUF3 of the fourth storage block 10c of the shelf unit U5 in the order Two antireflection films are formed. In this case, after the heat treatment by the heating unit (CLHP5), the wafer is transferred to the peripheral exposure apparatus (WEE), and after the peripheral exposure process, the wafer is transferred to the mounting shelf BUF3 of the fourth storage block 10c of the shelf unit U5. May be.

  Thereafter, the delivery arm D enters the mounting shelf BUF3 of the fourth storage block 10d of the shelf unit U5, receives the wafer W, and delivers it to the delivery stage TRS2 of the shelf unit U5. Subsequently, the shuttle arm A is transported to the delivery stage TRS5 of the shelf unit U6. Subsequently, the wafer W on the delivery stage TRS5 is transferred to the exposure apparatus S4 by the interface arm F, where a predetermined exposure process is performed.

  The wafer W after the exposure processing is transferred by the interface arm F to the delivery stage TRS3 of the shelf unit U6 → the heating unit (PEB1) → the cooling plate CPL9 (CPL10) of the shelf unit U6 → the developing unit 31 → the heating unit (POST1). A predetermined development process is performed. The wafer W thus developed is transferred to the cooling plate CPL7 (CPL8) of the first storage block 10a of the shelf unit U5 and adjusted to a predetermined temperature in order to deliver the wafer W to the transfer arm C. After that, the transfer arm C returns the original carrier 20 placed on the carrier block S1.

  In the above description, the conveyance processing mode in which the antireflection film is formed below the resist film and the conveyance processing mode in which the antireflection film is formed below the resist film have been described. With respect to the transfer processing mode in which the antireflection film is formed on the lower side and the upper side and the transfer processing mode without the antireflection film, the wafer W can be processed by combining the steps of the transfer processing mode.

  In the above, the coating / development processing apparatus described above manages the recipe of each processing unit, schedule management of the transfer flow (transfer path) of the wafer W, processing in each processing unit, main arms A1, A3 to A5, A control unit 100 including a computer that controls driving of the transfer arm C, the transfer arms D and E, and the interface arm F is provided. The control unit 100 uses the unit blocks B1 to B5 to transfer the wafer W. The process is to be performed.

  The transfer flow schedule designates the transfer path (transfer order) of the wafers W in the unit block, and is created for each of the unit blocks B1 to B5 according to the type of coating film to be formed. A plurality of transport flow schedules are stored in the control unit 100 for each of the blocks B1 to B5.

  Further, depending on the coating film to be formed, a mode in which the wafer W is transferred to all the unit blocks B1 to B5, a unit block (DEV layer B1, B2) for performing development processing, and a unit block (COT layer B4) for applying a resist solution. ) And a unit block (BCT layer B3) for forming the first antireflection film, a mode in which the wafer W is conveyed, and a unit block (DEV layers B1 and B2) for performing development processing and a resist solution are applied. Only the mode for transporting the wafer W to the unit block (COT layer B4) and the unit block (TCT layer B5) for forming the second antireflection film, and the unit blocks (DEV layers B1, B2) for performing development processing There is a mode in which the wafer W is transferred, and the mode selection unit of the control unit 100 is used to transfer the wafer W according to the type of coating film to be formed. By selecting the block and selecting the optimum recipe from a plurality of transport flow schedules prepared for each selected unit block, the unit block to be used is selected according to the coating film to be formed, In the unit block, driving of each processing unit and arm is controlled, and a series of processing is performed.

  In such a coating / development processing apparatus, main arms A1 to A5 or delivery arms are provided between the carrier block S1 and the processing block S2 and between the processing block S2 and the second processing block S4 (exposure apparatus), respectively. Since the shelf units U5 and U6 (substrate storage units) including the cooling plate 14 which mounts and cools the wafer W received from D and E and does not require the support pins are provided, the lifting time of the support pins can be saved. The cooling time by the cooling plate 14 can be extended. Therefore, throughput and processing accuracy can be improved. Further, since the drive mechanism of the support pins can be reduced, the risk of failure of the cooling plate 14 can be reduced, maintenance can be facilitated, and the space in the height direction of the cooling plate 14 can be reduced. Miniaturization can be achieved.

  Furthermore, the cooling plate 14 has a cooling plate body having a refrigerant flow path 63 communicating with the supply flow path 61 and the discharge flow path 62 at the upper part of the base block 60 having the supply flow path 61 and the discharge flow path 62 of the refrigerant fluid. Since the necessary number of 64 is stacked and fixed, the number of cooling plates 14 can be increased and productivity can be improved.

  In the above-described embodiment, the case where the substrate heat treatment apparatus according to the present invention is applied to a resist coating / development processing system for a semiconductor wafer has been described. However, the substrate heat treatment apparatus according to the present invention is a resist coating / development process for an FPD substrate. Of course, it can also be applied to the system.

  In the above embodiment, the case where the heat treatment plate is formed by the cooling plate 14 having the flow path of the refrigerant has been described. However, the heating medium set at a predetermined temperature is supplied into the flow path to thereby determine the substrate. You may form a heat processing plate with the heating plate heated or maintained to temperature.

  In the above-described embodiment, the case where the wafer W is cooled by supplying a coolant having a predetermined temperature to the heat treatment plate, for example, the cooling plate 14 has been described. However, the heat medium having different temperatures is supplied to the heat treatment plate in a switchable manner. May be. For example, as shown in FIG. 14, a temperature switching mechanism such as a switching valve 6 includes a supply port 60a of at least the supply channel 61a of the supply channel 61a and the discharge channel 62a, and the supply sources 3 and 4 of the heat medium having different temperatures. It is also possible to connect the heat medium at a different temperature to the heat treatment plate 14B so that the heat medium can be switched. In this case, the switching valve 6 is switched to supply heat media having different temperatures from the plurality of heat medium supply sources 3 and 4 to the heat treatment plate 14B. However, the present invention is not necessarily limited to this structure. For example, as shown in FIG. 15, a heat medium supply conduit that connects at least the supply port 60 a of the supply flow path 61 a of the heat treatment plate 14 B and the discharge flow path 62 a to one heat medium supply source 5. 8A is provided with a temperature control mechanism 7 as a temperature switching mechanism, for example, by controlling the temperature control mechanism 7 based on a control signal from the control unit 100, the heat medium is set to a predetermined temperature, and heat treatment is performed. You may make it supply to the plate 14B.

W Semiconductor wafer (substrate)
DESCRIPTION OF SYMBOLS 1 Copper thin plate 1a Uppermost layer thin plate 1b Lowermost layer thin plate 3, 4, 5 Heating medium supply source 6 Switching valve (temperature switching mechanism)
7 Temperature control mechanism (temperature switching mechanism)
8,8A Heat medium supply line 14 Cooling plate (heat treatment plate)
14B Heat treatment plate 60a Supply port 61, 61a Supply flow path 62, 62a Discharge flow path 63 Refrigerant flow path (heat medium flow path)
64 Cooling plate body 64e Proximity pin (support pin)
64f Suction hole 64h Mounting hole 67 Substrate suction plate 67d Suction flow path

Claims (9)

A substrate heat treatment apparatus comprising a heat treatment plate for heat-treating a substrate to a predetermined temperature while holding the placed substrate,
The heat treatment plate is formed by laminating a plurality of thin plates made of a heat conductive material, and is connected to the heat medium supply channel, the discharge channel, and these channels established by laminating the thin plates. Comprising a heat treatment plate body forming a heat medium flow path and an adsorption hole;
A substrate heat treatment apparatus. The substrate heat treatment apparatus according to claim 1,
It further comprises a substrate adsorption plate that is formed by laminating a plurality of thin plates made of a heat conductive material, and is formed by laminating the thin plates, and forms a suction channel that communicates with the adsorption holes. A substrate heat treatment apparatus. The substrate heat treatment apparatus according to claim 1 or 2,
A substrate heat treatment apparatus, wherein the thinnest layer of the uppermost layer and the lowermost layer of the heat treatment plate is a thin plate made of a material having strength resistance compared to the thin plate of the inner layer. The substrate heat treatment apparatus according to claim 1,
A substrate heat treatment apparatus, wherein the thinnest layer of the uppermost layer and the lowermost layer of the heat treatment plate main body is a thin plate made of a material having strength resistance compared to a thin plate of an inner layer. The substrate heat treatment apparatus according to any one of claims 1 to 4,
A substrate heat treatment apparatus, characterized in that mounting holes are provided at arbitrary positions in a plurality of thin plates on the upper side of the heat treatment plate, and support pins for supporting the substrate are fitted and erected in the attachment holes. The substrate heat treatment apparatus according to claim 1 or 2,
A substrate heat treatment apparatus, wherein the thin plate is a copper thin plate. The substrate heat treatment apparatus according to claim 3 or 4,
The substrate heat treatment apparatus characterized in that the thin plates of the uppermost layer and the lowermost layer are stainless steel, titanium or nickel thin plates, and the thin plate of the inner layer is a thin copper plate. The substrate heat treatment apparatus according to any one of claims 1 to 7,
A substrate heat treatment apparatus, wherein the thin plates are bonded together by diffusion bonding. The substrate heat treatment apparatus according to any one of claims 1 to 8,
A substrate heat treatment apparatus, characterized in that at least a supply port of the supply flow path and the discharge flow path and a heat medium supply source are connected by a supply line having a temperature switching mechanism.

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