JP2010218940A - Organic light-emitting device and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an organic light-emitting device capable of reducing a production cost by preventing moisture and oxygen from invading the organic light-emitting device, and also by eliminating unevenness formed by TFTs and signal wiring, foreign substances deposited at an end portion of an organic protective layer, and defects caused by cracks or the like of a ground. <P>SOLUTION: The organic light-emitting device is provided with a second organic planarized layer 15 on a substrate 1, separated from a first organic planarized layer 5 provided with a pixel area 20, wherein on at least a region 8 between the first organic planarized layer 5 and the second organic planarized layer 15, and the second organic planarized layer 15, there is provided a protective member including at least a first inorganic protective layer 12, an organic protective layer 13, a second inorganic protective layer 14, and wherein the first inorganic protective layer 12 and the second inorganic protective layer 14 come into contact with each other above the second organic planarized layer 15. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to an organic light emitting device and a manufacturing method thereof.

  In recent years, organic light-emitting devices having organic light-emitting elements, which are self-luminous devices, are currently attracting attention as flat panel displays. Here, the organic light-emitting element, which is a constituent member of the organic light-emitting device, is likely to be deteriorated in characteristics due to moisture and oxygen in the atmosphere. For example, slight moisture contained in the atmosphere causes peeling between the organic compound layer and the electrode layer, which causes dark spots. For this reason, the organic light-emitting element is covered with an etching glass cover, the periphery is attached with a sealant, and a moisture absorbent is attached inside to absorb moisture that enters from the sealing surface, thereby ensuring the life of the organic light-emitting element. is doing.

  However, in order to realize a space-saving flat panel display using a thin organic light emitting device, it is ultimately necessary to eliminate the space for the hygroscopic agent provided around the pixel area. There is a need for a method for realizing this, that is, a method for sealing an organic light emitting device that does not require a large amount of moisture absorbent. Therefore, there is a demand for solid sealing with a protective member having a function of preventing moisture and oxygen from entering the organic compound layer.

  By the way, on the organic light emitting device, there are irregularities due to an element isolation film and through holes. As specific means for preventing the intrusion of moisture and oxygen while covering such irregularities, a method using two types of protective members has been proposed. More specifically, there has been proposed an organic light emitting device in which an organic protective layer made of an organic material is formed on an organic light emitting element, and an inorganic protective layer made of an inorganic material is further laminated and covered. Here, in this organic light emitting device, after forming the organic protective layer on the entire surface of the organic light emitting device by the spin coat method or the dip method, the organic protective layer coated on the external connection terminal needs to be selectively removed by the etching method. There is. However, the shape of the end portion of the organic protective layer exposed by etching may be vertically upright or inverted taper. Due to the shape of the end portion of the organic protective layer, even if an inorganic protective layer is formed on the organic protective layer, the end portion of the organic protective layer cannot be sufficiently coated with the inorganic protective layer. For this reason, it becomes easy for moisture and oxygen to enter from the end of the organic protective layer.

  Therefore, Patent Document 1 includes a partition that surrounds the pixel area, an organic protective layer that covers the pixel area is formed in a region surrounded by the partition, and then an organic protective layer and an inorganic protective layer that covers the partition are provided. A formed organic light emitting device has been proposed.

JP 2003-323974 A

  By the way, the organic light emitting device of Patent Document 1 prevents water from entering the organic light emitting element from the periphery of the pixel area by an inorganic protective layer covering a partition surrounding the pixel area. However, when the organic light-emitting device is narrowed, unevenness due to TFTs and signal wirings for driving the organic light-emitting elements may exist in the sealing region outside the partition.

  In many cases, foreign substances such as film pieces adhere to the sealing region provided around the pixel area. This is because foreign matters are generated in the mask vapor deposition process for forming the organic compound layer and the sputtering process for forming the upper electrode. In addition, when the partition surrounding the organic planarization layer and the pixel area is formed before the step of forming the organic compound layer (vapor deposition step), the partition and the mask used during mask deposition come into contact with each other. Scratches may occur.

  Thus, in the state where the partition surrounding the pixel area has the above-described unevenness, foreign matter, and scratches, the foreign matter is coated and sealed with the organic protective layer and the inorganic protective layer formed so as to cover the entire partition. It is not easy to do. This is because the above-described foreign matters and scratches are complicated in shape, and specifically, the shape of the side surface is sharp, reversely tapered, or groove-shaped.

  Therefore, in the method disclosed in Patent Document 1, the unevenness that may occur at the end of the organic protective layer cannot be sufficiently covered only by the inorganic protective layer. For this reason, in order to sufficiently prevent the intrusion of moisture and oxygen from the end of the organic protective layer, it is necessary to increase the thickness of the inorganic protective layer, which requires a significant capital investment.

  The object of the present invention is to prevent moisture and oxygen from entering the organic light emitting device and eliminate defects caused by unevenness due to TFT and signal wiring, foreign matter adhering to the edge of the organic protective layer, scratches on the ground, etc. An organic light emitting device capable of reducing the cost is provided.

The organic light emitting device of the present invention comprises a substrate,
A first organic planarization layer provided on the substrate;
A pixel area provided on the first organic planarization layer;
A protective member that covers the pixel area and includes a plurality of layers;
A second organic planarization layer provided on the substrate and spaced apart from the first organic planarization layer;
In the pixel area, a plurality of organic light-emitting elements each including a lower electrode, an organic compound layer, and an upper electrode are arranged,
The protective member has at least a first inorganic protective layer, an organic protective layer, and a second inorganic protective layer;
At least on the region between the first organic planarization layer and the second organic planarization layer and on the second organic planarization layer, a first inorganic protective layer, an organic protective layer, a second inorganic protective layer, Are provided in this order,
The first inorganic protective layer and the second inorganic protective layer are in contact with each other above the second organic planarizing layer.

  According to the present invention, moisture and oxygen can be prevented from entering the organic light emitting device, and defects caused by unevenness due to the TFT and signal wiring, foreign matter adhering to the edge of the organic protective layer, scratches on the ground, etc. can be eliminated and produced. It is possible to provide an organic light emitting device capable of reducing the cost.

It is a schematic diagram which shows 1st embodiment in the organic light-emitting device of this invention, (a) is a plane schematic diagram, (b) is a cross-sectional schematic diagram between AB of (a). It is a schematic diagram which shows 2nd embodiment in the organic light-emitting device of this invention, (a) is a plane schematic diagram, (b) is a cross-sectional schematic diagram between CD of (a).

  Hereinafter, although embodiment of the organic light-emitting device of this invention is described, this invention is not limited to these embodiment.

  An organic light-emitting device of the present invention includes a substrate, a first organic planarization layer provided on the substrate, a pixel area provided on the first organic planarization layer, a plurality of layers covering the pixel area And a second organic planarization layer provided on the substrate. The second organic planarization layer is provided separately from the first organic planarization layer and is a separate member from the first organic planarization layer. That is, the second organic planarization layer is not formed by processing a part of the first organic planarization layer, but is a member formed independently of the first organic planarization layer.

  Here, we conducted an experiment on the case where a part of the first organic planarization layer was processed to form the second organic planarization layer. Specifically, the first organic planarization layer in which the pixel area is provided, and a groove having a specific width (removal region of the first organic planarization layer) is provided in a region corresponding to the outer edge of the pixel area. . And after providing the protective member which consists of a 1st inorganic protective layer, an organic protective layer, and a 2nd inorganic protective layer on this groove | channel, two types of inorganic on the 2nd organic planarization layer in the outer side of the said groove | channel An organic light-emitting device configured so that protective layers (first inorganic protective layer and second inorganic protective layer) were in contact with each other was produced. The penetration of moisture and oxygen was evaluated in the sealing region where the two types of protective layers were in contact.

  As a result, due to reasons such as foreign matter adhering to the organic planarization layer outside the groove, or scratches, the effect of suppressing the penetration of moisture and oxygen in the sealing region of the organic light emitting device, It was not enough. From this result, the second organic planarization layer is not formed by processing a part of the first organic planarization layer, but is a member formed independently of the first organic planarization layer. Cost.

  In the organic light emitting device of the present invention, a plurality of organic light emitting elements each including a lower electrode, an organic compound layer, and an upper electrode are arranged in the pixel area.

  The protective member has at least a first inorganic protective layer, an organic protective layer, and a second inorganic protective layer. At least on the region between the first organic planarization layer and the second organic planarization layer and on the second organic planarization layer, a first inorganic protective layer, an organic protective layer, and a second inorganic protective layer, Are provided in this order.

  The first inorganic protective layer and the second inorganic protective layer are in contact with each other on the second organic planarizing layer.

  Hereinafter, embodiments of the organic light-emitting device of the present invention will be described with reference to the drawings.

[First embodiment]
FIG. 1 is a schematic diagram illustrating a first embodiment of the organic light-emitting device of the present invention, (a) is a schematic plan view, and (b) is a schematic cross-sectional view taken along AB in (a). is there.

  Below, the structural member of the organic light-emitting device of FIG. 1 is demonstrated.

  The substrate 1 may be a transparent substrate or an opaque substrate. Moreover, any of an insulating substrate made of a synthetic resin or the like, a conductive substrate formed with an insulating layer such as silicon oxide or silicon nitride on the surface, or a semiconductor substrate may be used. In the case where there are a plurality of organic light emitting elements included in the organic light emitting device, it is desirable that the TFT 2 for driving each organic light emitting element is formed on the substrate 1.

  When the TFT 2 is formed on the substrate 1, an insulating layer 4 made of an inorganic material is formed so as to cover the TFT 2 and the signal wiring 3 (of the TFT). As a constituent material of the insulating layer 4, silicon nitride, silicon oxynitride, silicon oxide, or the like can be used.

  On the insulating layer 4, a first organic planarizing layer 5 is formed for flattening the unevenness generated by providing the TFT 2. As a constituent material of the first organic planarizing layer 5, acrylic resin, polyimide resin, norbornene resin, fluorine resin, or the like can be used. In addition, in order to ensure the area | region which provides the 2nd organic planarization layer 15 mentioned later, it is necessary to adjust the area | region which provides the 1st organic planarization layer 5 suitably. Specifically, a region 8 where the first organic planarization layer 5 is not provided can be secured in a region having a width of 0.2 mm or more from the outer edge of the substrate 1. This region 8 is a region provided when a part of the first organic planarization layer 5 is removed or not formed from the beginning. In this region 8, a thin film 8 a made of an inorganic material that covers the signal wiring 3 and the insulating layer 4 is provided.

  A pixel area 20 is provided on the first organic planarization layer 5. A lower electrode 6 is formed in the pixel area 20 at a position corresponding to each pixel. Here, the lower electrode 6 and the signal wiring 3 are electrically connected through a contact hole 3 a formed in the insulating layer 4 and the first organic planarization layer 5.

  On the other hand, the external connection terminal 9 provided separately on the substrate 1 is provided by a method such as removing the insulating layer 4 and the first organic planarization layer 5 so as to be directly electrically connected to the signal wiring 3. ing.

  On the outer edge of the first organic planarization layer 5, a pixel separation film 7 for covering the peripheral edge of the lower electrode 6 is formed. Examples of the constituent material of the pixel separation film 7 include inorganic insulating materials made of silicon nitride, silicon oxynitride, silicon oxide, and the like, acrylic resins, polyimide resins, and novolac resins.

  An organic compound layer 10 is formed on the lower electrode 6. As long as the organic compound layer 10 includes a light-emitting layer, the organic compound layer 10 may have a single-layer structure including only a light-emitting layer, or a multi-layer structure including a hole transport layer, an electron transport layer, and the like in addition to the light-emitting layer. There may be. Moreover, a well-known material can be used as a constituent material of each layer which comprises the organic compound layer 10. FIG.

  An upper electrode 11 is formed on the organic compound layer 10. Examples of the constituent material of the upper electrode 11 include oxide transparent conductive films such as IZO (indium zinc oxide) and ITO (indium tin oxide), and semi-transparent films such as silver, aluminum, and gold.

  A second organic planarizing layer 15 is formed in the region 8 where the first organic planarizing layer 5 is not formed. The second organic planarization layer 15 covers the unevenness and foreign matter formed by the TFT 2 and the signal wiring 3 of the TFT below the thin film 8a and plays a role of planarization. The second organic planarization layer 15 is a member for preventing cracks and poor coverage from occurring in the second inorganic protective layer 14 formed in a later step. At this time, as shown in FIG. 1B, the second organic planarization layer 15 is provided apart from the first organic planarization layer 5 (at a certain distance).

  Examples of the constituent material of the second organic planarizing layer 15 include a thermosetting or UV curable polymer material. For example, an epoxy resin, an acrylic resin, a urethane resin, a polyurethane resin, a polyurea resin, a silicone resin, or the like can be used.

  As a method of forming the second organic planarizing layer 15, the above-described polymer material is applied using, for example, a dispenser in a vacuum or a nitrogen atmosphere under a low dew point. Instead of the dispenser, screen printing, slit coater or the like may be used. Further, the application position is set at a certain distance from the first organic planarization layer 5. After applying the polymer material, the polymer material is locally heated or irradiated with light so that the temperature of the pixel area 20 of the substrate 1 is about 120 ° C. or lower. At this time, when a thermosetting polymer material is used as the constituent material of the second organic planarizing layer 15, the polymer material is locally heated using a vacuum baking furnace or an infrared lamp. On the other hand, when a UV curable polymer material is used as the constituent material of the second organic planarizing layer 15, the polymer material is irradiated locally using a UV light source.

  Moreover, the formation process of the 2nd organic planarization layer 15 is performed after formation of the upper electrode 11, ie, after an organic light emitting element is formed. By so doing, unevenness, foreign matter, scratches and the like that may exist before the second organic planarization layer 15 is formed can be planarized.

  The organic light-emitting element, which is a constituent member of the organic light-emitting device of the present invention, is protected from moisture and oxygen contained in the atmosphere by a protective member comprising the first inorganic protective layer 12, the organic protective layer 13, and the second inorganic protective layer 14. The

  The first inorganic protective layer 12 that is a part of the protective member is a member that is provided to protect the organic light emitting element from moisture and oxygen that can permeate from the end of the region 8. In the present embodiment, as shown in FIG. 1B, the first inorganic protective layer 12 is formed over almost the entire region excluding the region where the external connection terminals 9 are provided. That is, it is formed so as to cover the first organic planarization layer 5, the region 8 and the second organic planarization layer 15 including the pixel area 20.

  As shown in FIG. 1B, when the first inorganic protective layer 12 is formed in a region other than the region where the external connection terminals 9 are provided, when the organic protective layer 13 described later is formed, It will bear the function of protecting the members formed up to. That is, when the constituent material of the organic protective layer 13 is applied onto the organic light emitting element, the organic protective layer 13 is protected from moisture contained in the constituent material of the organic protective layer 13. At the same time, it has a function of protecting members such as organic light-emitting elements from gas peeling caused by gas generated when baking the thin film to be the organic protective layer 13 and stress that may occur during baking. Examples of the constituent material of the first inorganic protective layer 12 include silicon nitride, silicon oxide, and silicon nitride oxide. A plurality of these constituent materials may be used to form a laminate. As a method for forming the second inorganic protective layer 12, a sputtering method or a CVD method can be used.

  The organic protective layer 13 is for flattening foreign matters and irregularities that may occur in the region between the first organic planarizing layer 5 and the second organic planarizing layer 15 when the first inorganic protective layer 12 is formed. It is a protective member provided. The outer edge of the organic protective layer 13 overlaps with the inner edge of the second organic planarizing layer 15 but does not overlap with the outer edge. For this reason, unevenness and foreign matter that may occur at the outer edge of the organic protective layer 13 are flattened by the second organic flattening layer 15.

  The constituent material of the organic protective layer 13 is not particularly limited as long as it is a high moisture content polymer material that does not generate dark spots when directly formed on the organic light emitting device. For example, an epoxy resin, an acrylic resin, a urethane resin, a polyurethane resin, a polyurea resin, or a silicone resin can be used. The organic protective layer 13 is formed by a coating method using a dispenser, for example, in a vacuum or in a nitrogen atmosphere under a low dew point. Instead of the dispenser, screen printing, slit coater, or the like may be used.

  The second inorganic protective layer 14 is a protective member that protects the organic light emitting device from the ingress of moisture and oxygen. The organic light emitting device of this embodiment protects the organic light emitting element from the ingress of moisture and oxygen by enclosing the organic light emitting element with two types of inorganic protective layers (first inorganic protective layer 12 and second inorganic protective layer 14). can do.

  Examples of the constituent material of the second inorganic protective layer 14 include silicon nitride and silicon nitride oxide. Preferably, it is silicon nitride. This is because silicon nitride has lower moisture permeability than silicon nitride oxide. The second inorganic protective layer 14 can be formed by a plasma CVD method, a sputtering method, or the like.

  In the present invention, two types of inorganic protective layers (first inorganic protective layer 12 and second inorganic protective layer 14) that seal the outer edge of the pixel area 20 are planarized by the second organic planarizing layer 15. For this reason, the second inorganic protective layer 14 is hardly required to provide coverage performance, and the film thickness can be greatly reduced. Therefore, the film thickness of the second inorganic protective layer 14 may be 0.2 μm or more. However, if the thickness of the second inorganic protective layer 14 is increased, the light transmittance is reduced and the capital investment is increased. Therefore, the upper limit of the thickness is preferably 1 μm or less.

  After providing the second inorganic protective layer 14, as shown in FIG. 1B, the external connection terminals 9 provided on the substrate 1 and a flexible wiring board (hereinafter referred to as FPC) 17 are electrically connected. Specifically, first, an anisotropic conductive film (hereinafter referred to as ACF) 16 is temporarily pressure-bonded onto the external connection terminal 9. When performing temporary pressure bonding, low temperature pressure bonding may be performed. Next, the protective sheet on the ACF 16 is removed, and the FPC 17 is aligned with the external connection terminal 9. The alignment may be automatic alignment. Thereafter, the heated heater head is applied onto the FPC 17 and heat-pressed to complete the joining of the external connection terminal 9 and the FPC 17.

  On the other hand, on the region including the pixel area 20, specifically, on the second inorganic protective layer 14, a circularly polarizing plate 19 may be attached via an adhesive 18 as necessary. The circularly polarizing plate 19 includes, for example, a configuration in which a polarizing plate and a 1 / 4λ plate (retardation plate) are combined in the same manner as a usual circularly polarizing plate.

[Second Embodiment]
FIG. 2 is a schematic diagram showing a second embodiment of the organic light-emitting device of the present invention, (a) is a schematic plan view, and (b) is a schematic cross-sectional view.

  In the following, the differences from the first embodiment will be mainly described.

  In the present embodiment, as shown in FIG. 2B, the first inorganic protective layer 12 includes a second organic planarization layer 15, a first organic planarization layer 5, and a second organic planarization layer 15. It forms so that the area | region (area | region 8) between may be coat | covered.

  Even if the organic protective layer 13 is directly formed on the organic light emitting device without providing the first inorganic protective layer 12 as shown in FIG. 2B, the first inorganic protective layer is formed on the second organic planarizing layer 15. The organic light-emitting element can be shielded from the outside air by the contact of 12 and the second inorganic protective layer 14.

  Examples of the present invention will be described below.

<Example 1>
The organic light emitting device shown in FIG. 1 was produced by the following method.

  On the glass substrate 1, TFT2, the insulating layer 4, and the 1st organic planarization layer 5 were laminated | stacked and formed in the desired shape, respectively in this order. Next, the lower electrode 6 was formed by sequentially depositing aluminum (Al) and indium tin oxide (ITO) on the first organic planarization layer 5 in units of pixels. At this time, the layer thickness of the lower electrode 6 was set to 150 nm. Next, after the thin film 8a was formed, the periphery of each pixel was covered with a pixel separation film 7 made of polyimide. The glass substrate thus formed up to the pixel separation film 7 was used as a substrate with electrodes in the next step.

  Next, the substrate with electrodes was washed with pure water for about 5 minutes and then dehydrated under baking conditions at about 200 ° C. for 2 hours. Next, the lower electrode 6 was subjected to UV / ozone cleaning.

  Next, an organic compound layer 10 composed of a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer was formed on the lower electrode 6 by the following method.

Specifically, first, the substrate and the organic compound layer constituent materials are attached to a predetermined position in a vacuum deposition apparatus, and then N, N′-α-dinaphthylbenzidine (α-NPD) is formed on the lower electrode 6. Filmed to form a hole transport layer. At this time, the thickness of the hole transport layer was 40 nm, and the pressure condition was 1 × 10 ⁻³ Pa.

Next, a coumarin dye that emits green light and tris [8-hydroxyquinolinate] aluminum (Alq ₃ ) are co-deposited on the hole transport layer so as to have a volume mixing ratio of 1:99. Formed. At this time, the thickness of the light emitting layer was set to 30 nm.

  Next, a phenanthroline compound represented by the following formula was formed on the light emitting layer to form an electron transport layer. At this time, the thickness of the electron transport layer was 10 nm.

  Next, on the electron transport layer, cesium carbonate and the phenanthroline compound were co-evaporated to have a volume mixing ratio of 2.9: 97.1 to form an electron injection layer. At this time, the thickness of the electron injection layer was 40 nm.

  Next, the substrate formed up to the electron injection layer was moved to a sputtering apparatus. Next, indium tin oxide (ITO) was formed on the electron injection layer by sputtering to form the upper electrode 11. At this time, the film thickness of the upper electrode 11 was set to 60 nm.

  Next, a thermosetting epoxy resin was applied with a film thickness of about 10 μm and a width of about 1 mm by screen printing at a position 0.5 mm away from the outer edge of the first organic planarization layer 5. In addition, the said thermosetting epoxy resin was apply | coated to the area | region surrounding the circumference | surroundings of the 1st organic planarization layer 5, as shown to Fig.1 (a). Next, the substrate 1 was heated at 110 ° C. for 30 minutes in a vacuum baking furnace to cure the thermosetting epoxy resin, thereby forming the second organic planarizing layer 15.

  Next, a first inorganic protective layer 12 was formed over substantially the entire area of the substrate 1 by sputtering so as to cover all members except the external connection terminals 9.

  Specifically, first, a Si target was attached in the apparatus, Ar gas and nitrogen gas were flowed, and the pressure in the apparatus was adjusted to about 0.7 Pa. Next, the first inorganic protective layer 12 was deposited by supplying DC power and generating plasma. At this time, the film thickness of the first inorganic protective layer 12 was set to 0.1 μm.

  Next, the organic protective layer 13 was formed on the first inorganic protective layer 12.

  Specifically, a thermosetting epoxy resin film was formed by screen printing under a pressure condition of about 50 Pa. At this time, the thickness of the resin was about 10 μm. In forming the organic protective layer, the outer edge of the organic protective layer was placed on the inner edge of the second organic planarizing layer 15.

  Next, the organic protective layer 13 was cured by baking at 110 ° C. for 30 minutes in a vacuum.

  Next, the organic inorganic protective layer 13 and the second organic planarization layer 15 were covered by the VHF plasma CVD method, and the second inorganic protective layer 14 was formed over substantially the entire area of the substrate 1 excluding the external connection terminals 9.

Specifically, first, the high-frequency electrode of the deposited film forming apparatus and the ground electrode opposed thereto were fixed so as to be in contact with the back surface of the substrate 1. The reaction space pressure between the high-frequency electrode and the ground electrode was controlled to 100 Pa while flowing SiH ₄ gas, N ₂ gas, and H ₂ gas. Then, the second inorganic protective layer 14 was deposited by supplying high frequency power to the high frequency electrode. At this time, the thickness of the second inorganic protective layer 14 was about 1 μm.

  Next, an anisotropic conductive adhesive 16 was applied on the external connection terminals 9 provided on the substrate 1. Next, after the FPC 17 was placed on and adhered to the anisotropic conductive adhesive 16, the external connection terminal 9 and the FPC 17 were thermocompression bonded.

  Finally, an adhesive 18 was applied on the second inorganic protective layer 14, and then a circularly polarizing plate 19 was attached to obtain an organic light emitting device.

  Also, a total of 10 organic light emitting devices were manufactured by the above method.

  The obtained organic light emitting device was subjected to a durability test. Specifically, durability was evaluated when left in an environment of 60 ° C. and 90% RH for 1000 hours. Further, a specific evaluation method is that when the organic light emitting element is allowed to emit light after being left in an environment of 60 ° C. and 90% RH for a predetermined time (250 hours, 500 hours, 1000 hours), the surroundings of the organic light emitting element From this, the evaluation was made based on whether or not the decrease in luminance of the pixel spreads. The results are shown in Table 1. In Table 1 below, “X” indicates a case where the luminance is reduced from the periphery of the organic light emitting element, and “◯” indicates a case where the light is normally lit without a decrease in luminance from the periphery.

  As shown in Table 1, the organic light-emitting device of this example did not emit any organic light-emitting device that caused a decrease in brightness even when left in an environment of 60 ° C. and 90% RH for 1000 hours.

<Example 2>
The organic light emitting device shown in FIG. 2 was produced by the following method.

  First, members up to the upper electrode 11 were formed on the glass substrate 1 by the same method as in Example 1.

  Next, the second organic planarization layer 15 was formed by the following method.

  Next, a thermosetting epoxy resin was applied with a film thickness of about 10 μm and a width of about 1 mm by screen printing at a position 1 mm away from the outer edge of the first organic planarization layer 5. In addition, the said thermosetting epoxy resin was apply | coated only to the area | region between the 1st organic planarization layer 5 and the external connection terminal 9, as shown to Fig.2 (a). Next, the substrate 1 was heated at 110 ° C. for 30 minutes in a vacuum baking furnace to cure the thermosetting epoxy resin, thereby forming the second organic planarizing layer 15.

  Next, the first inorganic protective layer 12 is selectively formed by sputtering so as to cover the second organic planarization layer 15 and the region between the first organic planarization layer 5 and the second organic planarization layer 15. Formed.

  Specifically, the first inorganic protective layer 12 is formed by using a silicon target and controlling the chamber pressure to 0.7 Pa while flowing argon gas and nitrogen gas and supplying DC power to generate plasma. did. At this time, the film thickness of the first inorganic protective layer 12 was set to 0.1 μm.

  Next, the organic protective layer 13 was formed on the first inorganic protective layer 12.

  Specifically, a thermosetting epoxy resin film was formed by screen printing under a pressure condition of about 50 Pa. At this time, the thickness of the resin was about 10 μm. In forming the organic protective layer, the outer edge of the organic protective layer was placed on the inner edge of the second organic planarizing layer 15.

  Next, the organic protective layer 13 was cured by baking at 110 ° C. for 30 minutes in a vacuum.

  Next, the organic inorganic protective layer 13 and the second organic planarization layer 15 were covered by the VHF plasma CVD method, and the second inorganic protective layer 14 was formed over substantially the entire area of the substrate 1 excluding the external connection terminals 9.

Specifically, first, the high-frequency electrode of the deposited film forming apparatus and the ground electrode opposed thereto were fixed so as to be in contact with the back surface of the substrate 1. The reaction space pressure between the high-frequency electrode and the ground electrode was controlled to 100 Pa while flowing SiH ₄ gas, N ₂ gas, and H ₂ gas. Then, the second inorganic protective layer 14 was deposited by supplying high frequency power to the high frequency electrode. In the present embodiment, the thickness of the second inorganic protective layer 14 is set to about 2 μm in order to eliminate the influence of foreign matters and scratches at the end of the organic protective layer 13 where the second organic planarizing layer 15 is not formed. .

  Next, an anisotropic conductive adhesive 16 was applied on the external connection terminals 9 provided on the substrate 1. Next, after the FPC 17 was placed on and adhered to the anisotropic conductive adhesive 16, the external connection terminal 9 and the FPC 17 were thermocompression bonded.

  Finally, an adhesive 18 was applied on the second inorganic protective layer 14, and then a circularly polarizing plate 19 was attached to obtain an organic light emitting device.

  Also, a total of 10 organic light emitting devices were manufactured by the above method.

  The obtained organic light emitting device was subjected to a durability test in the same manner as in Example 1. The results are shown in Table 2.

  As shown in Table 2, the organic light-emitting device of this example was normally lit without any organic light-emitting device in which the luminance decreased even when left for 1000 hours in an environment of 60 ° C. and 90% RH.

<Example 3>
In Example 1, the organic light-emitting device was obtained by the same method as Example 1 except having set the film thickness of the 2nd inorganic protective layer 14 to five types from 0.1 micrometer to 2 micrometers.

  In addition, six samples each having a thickness of the second inorganic protective layer 14 set from 0.1 μm to 2 μm were prepared.

  The obtained organic light emitting device was subjected to a durability test in the same manner as in Example 1. The results are shown in Table 2.

  As shown in Table 3, the organic light-emitting device of this example has a reduced brightness even if it is left in an environment of 60 ° C. and 90% RH for 1000 hours if the thickness of the second inorganic protective layer is 0.2 μm or more. There was no organic light-emitting device that generated light, and it turned on normally.

  As described above, by forming the second organic planarization layer 15, sealing caused by the unevenness caused by the signal wiring that drives the TFT and the organic light emitting element, the foreign matter adhering to the edge of the organic protective layer, and the scratch on the base Defects can be greatly reduced, and the sealing performance of the sealing end can be obtained. In particular, as shown in the manufacturing method of the present invention, after the organic light-emitting element manufacturing process using a mask, a step of forming a second organic planarization layer is performed, so that foreign matter adhered in the organic light-emitting element manufacturing process. And scratches on the substrate can be flattened, so the effect is great. Accordingly, it is possible to prevent moisture and oxygen from entering the organic light-emitting element and to provide a low-cost organic light-emitting device.

  The organic light-emitting device of the present invention can be preferably used as a display device, and particularly preferably used for a television receiver, a display unit of a mobile phone, and a display unit of an imaging device.

1 Substrate 2 TFT (Thin Film Transistor)
DESCRIPTION OF SYMBOLS 3 Signal wiring 4 Insulating layer 5 1st organic planarization layer 6 Lower electrode 7 Pixel separation film 8 (The 1st organic planarization layer is not formed) Area | region 9 External connection terminal 10 Organic compound layer 11 Upper electrode 12 1st inorganic Protective layer 13 Organic protective layer 14 Second inorganic protective layer 15 Second organic planarizing layer 16 Anisotropic conductive film (ACF)
17 Flexible wiring board (FPC)
18 Adhesive 19 Circular polarizing plate 20 Pixel area

Claims (3)

A substrate,
A first organic planarization layer provided on the substrate;
A pixel area provided on the first organic planarization layer;
A protective member that covers the pixel area and includes a plurality of layers;
A second organic planarization layer provided on the substrate and spaced apart from the first organic planarization layer;
In the pixel area, a plurality of organic light-emitting elements each including a lower electrode, an organic compound layer, and an upper electrode are arranged,
The protective member has at least a first inorganic protective layer, an organic protective layer, and a second inorganic protective layer;
At least on the region between the first organic planarization layer and the second organic planarization layer and on the second organic planarization layer, a first inorganic protective layer, an organic protective layer, a second inorganic protective layer, Are provided in this order,
The organic light-emitting device, wherein the first inorganic protective layer and the second inorganic protective layer are in contact with each other above the second organic planarization layer.   2. The organic light emitting device according to claim 1, wherein the thickness of the second inorganic protective layer is 0.2 μm or more and 1 μm or less. A substrate,
A first organic planarization layer provided on the substrate;
A pixel area provided on the first organic planarization layer;
A protective member that covers the pixel area and includes a plurality of layers;
A second organic planarization layer provided on the substrate and spaced apart from the first organic planarization layer;
In the pixel area, a plurality of organic light-emitting elements each including a lower electrode, an organic compound layer, and an upper electrode are arranged,
The protective member includes at least a first inorganic protective layer, an organic protective layer, and a second inorganic protective layer,
At least on the region between the first organic planarization layer and the second organic planarization layer and on the second organic planarization layer, a first inorganic protective layer, an organic protective layer, a second inorganic protective layer, Are provided in this order,
In the method of manufacturing an organic light emitting device in which the first inorganic protective layer and the second inorganic protective layer are in contact with each other on the second organic planarization layer,
A method for producing an organic light emitting device, comprising: forming a second organic planarization layer in a region at a certain distance from the first organic planarization layer after forming the organic light emitting element.

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