JP2010215422A - Microwave dielectric ceramic composition and method for producing the same - Google Patents
Microwave dielectric ceramic composition and method for producing the same Download PDFInfo
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Abstract
Description
本発明はマイクロ波誘電体磁器組成物及びその製造方法に関し、更に詳しくはMgOを主成分とする新規な組成を持ち、低い焼成温度下で高密度多結晶体を得ることができると共に誘電損失が極めて小さいマイクロ波誘電体磁器組成物と、その製造方法に関する。 The present invention relates to a microwave dielectric porcelain composition and a method for producing the same, and more specifically, has a novel composition mainly composed of MgO, can obtain a high-density polycrystalline body at a low firing temperature, and has a dielectric loss. The present invention relates to an extremely small microwave dielectric ceramic composition and a method for producing the same.
マイクロ波誘電体材料は主にAu(金)、Ag(銀)、Cu（銅）等の抵抗が比較的小さい電極材料と組み合わせ、共振器、フィルター、アンテナ、高周波回路基板及び積層回路素子基板として用いられている。 Microwave dielectric materials are mainly used in combination with electrode materials with relatively low resistance such as Au (gold), Ag (silver), Cu (copper), etc., as resonators, filters, antennas, high frequency circuit boards, and multilayer circuit element boards. It is used.
従来、この種の材料では、自動車電話や携帯電話への共振器の実装のため小型化が最優先され、使用される周波数も低いことから、εr（比誘電率）の高い材料を中心に研究・開発が進められてきた。 Conventionally, with this type of material, downsizing is the top priority for mounting resonators on automobile phones and mobile phones, and the frequency used is low, so materials with a high ε r (relative dielectric constant) are the main focus. Research and development has progressed.
しかし、情報通信技術の高度化による大情報量化及び従来の使用帯域での周波数資源の枯渇に伴い、利用周波数の高周波数化が急速に進んでいる。そのため近年では、高いQ・f値（品質係数）と低いεrを持つ材料の研究・開発が盛んになってきている。 However, as the amount of information increases due to the advancement of information communication technology and the frequency resources in the conventional band used are depleted, the use frequency is rapidly increasing. Therefore, in recent years, research and development of materials having a high Q · f value (quality factor) and a low ε r have become active.
このような背景下、マイクロ波誘電体磁器組成物は、近年利用が拡大しつつあるミリ波帯等の高周波数帯での通信に必要不可欠な材料である。 Under such circumstances, the microwave dielectric ceramic composition is an indispensable material for communication in a high frequency band such as a millimeter wave band whose use is expanding in recent years.
誘電体材料が多く用いられる基板材料では、その高周波回路において基板上の導体パターンが分布定数回路として機能するため、誘電体材料の特性が重要となる。特にミリ波帯ではεrが高すぎると伝送遅延等の弊害が生じやすくなり、信号の高速処理に支障が生じる。また、誘電損失（tanδ=１/Q）は周波数の増加に比例して増加するため、回路上の信号伝播の損失を抑えるためには、低損失な誘電体材料、即ち高いＱ値を持つ材料が必要となる。従って、ミリ波帯等の高周波数帯域での応用において高Ｑ・低εrの誘電体材料が求められている。 In a substrate material in which a dielectric material is often used, since the conductor pattern on the substrate functions as a distributed constant circuit in the high-frequency circuit, the characteristics of the dielectric material are important. In particular, in the millimeter wave band, if ε r is too high, adverse effects such as transmission delay are likely to occur, which hinders high-speed signal processing. In addition, since the dielectric loss (tan δ = 1 / Q) increases in proportion to the increase in frequency, a low-loss dielectric material, that is, a material having a high Q value is used to suppress signal propagation loss on the circuit. Is required. Accordingly, there is a demand for a dielectric material having a high Q and a low ε r for application in a high frequency band such as a millimeter wave band.
ところで、MgO自体は単結晶、多結晶ともに良好なQ・f値とεrを持つ材料として知られている。しかし、高密度な多結晶MgOを得るためには1650℃以上の焼成温度が必要なため、設備面、プロセス面で製造コストが嵩むという問題があった。又、従来の多結晶のMgOはQ・f値に関しても十分満足できる程に高い値は得られていなかった。 By the way, MgO itself is known as a material having a good Q · f value and ε r for both single crystal and polycrystal. However, since a firing temperature of 1650 ° C. or higher is necessary to obtain high-density polycrystalline MgO, there is a problem that manufacturing costs increase in terms of equipment and processes. Further, the conventional polycrystalline MgO has not been sufficiently high in terms of the Q · f value.
そこで本発明は、より低い焼成温度下で高密度な多結晶MgOを得ることができ、しかもその多結晶MgOの誘電損失が極めて小さいマイクロ波誘電体磁器組成物及びその製造方法を提供することを、解決すべき技術的課題とする。 Accordingly, the present invention provides a microwave dielectric porcelain composition capable of obtaining high-density polycrystalline MgO at a lower firing temperature and having extremely low dielectric loss of the polycrystalline MgO, and a method for producing the same. The technical problem to be solved.
本願発明者らは高Q、低誘電率材料の創成に取り組み、候補物質としてMgO-B2O3系化合物に着目した。そしてxMgO-(1-ｘ)B2O3の一般式で示される組成物の合成と評価を行う過程で、前記一般式におけるxの値が0.75以上であり、より具体的には0.75≦ｘ≦0.99である組成域の材料が、非常に低い温度範囲で焼成しても、極めて優れたマイクロ波誘電特性を示すことを見出し、本発明を完成した。 The inventors of the present application worked to create a high-Q, low-dielectric constant material, and focused on MgO-B 2 O 3 -based compounds as candidate substances. In the process of synthesizing and evaluating the composition represented by the general formula xMgO- (1-x) B 2 O 3 , the value of x in the general formula is 0.75 or more, and more specifically, 0.75 ≦ x The present inventors have found that a material having a composition range of ≦ 0.99 exhibits extremely excellent microwave dielectric properties even when fired in a very low temperature range, thereby completing the present invention.
（第１発明の構成）
上記課題を解決するための第１発明の構成は、xMgO-(1-ｘ)B2O3（0.75≦ｘ≦0.99）の一般式で示される組成の多結晶体である、マイクロ波誘電体磁器組成物である。
(Configuration of the first invention)
The structure of the first invention for solving the above-described problem is a microwave dielectric that is a polycrystalline body having a composition represented by a general formula of xMgO- (1-x) B 2 O 3 (0.75 ≦ x ≦ 0.99) It is a porcelain composition.
上記の第１発明において、より好ましくは0.95≦ｘ≦0.99である。 In the first invention, more preferably 0.95 ≦ x ≦ 0.99.
（第２発明の構成）
上記課題を解決するための第２発明の構成は、B2O3を焼結助剤として焼成したMgO多結晶体であって、400,000GHz以上のQ・f値を示す、マイクロ波誘電体磁器組成物である。
(Configuration of the second invention)
The structure of the second invention for solving the above-mentioned problem is a microwave dielectric ceramic made of MgO polycrystal sintered by using B 2 O 3 as a sintering aid and exhibiting a Q · f value of 400,000 GHz or more. It is a composition.
（第３発明の構成）
上記課題を解決するための第３発明の構成は、0.75〜0.99モル％のMgO粉末と0.01〜0.25モル％のB2O3粉末とを混合して成形した後、1350℃以上の温度域で焼成を行う、マイクロ波誘電体磁器組成物の製造方法である。
(Configuration of the third invention)
The structure of the third invention for solving the above-mentioned problem is that after mixing and molding 0.75 to 0.99 mol% MgO powder and 0.01 to 0.25 mol% B 2 O 3 powder, in a temperature range of 1350 ° C. or higher. It is a manufacturing method of the microwave dielectric ceramic composition which performs baking.
（第４発明の構成）
上記課題を解決するための第４発明の構成は、前記第３発明における焼成をボロン雰囲気中で行う、マイクロ波誘電体磁器組成物の製造方法である。
(Configuration of the fourth invention)
The structure of the 4th invention for solving the said subject is a manufacturing method of the microwave dielectric material ceramic composition which performs baking in the said 3rd invention in a boron atmosphere.
（マイクロ波誘電体磁器組成物の発明）
後述するマイクロ波誘電体磁器組成物の製造方法の発明により、1350℃以上の焼成温度において、高周波数での応用の決め手となるQ・f値が従来の多結晶MgOで知られているQ・f≒375,000GHzよりも有意に高い400,000GHz以上を示すマイクロ波誘電体磁器組成物が製造される。例えば1350℃での焼成によって、従来の多結晶MgOで知られているQ・f≒375,000GHzの２倍以上のQ・f≒773,000GHzを示すマイクロ波誘電体磁器組成物が得られている。
(Invention of microwave dielectric ceramic composition)
According to the invention of the manufacturing method of the microwave dielectric ceramic composition described later, at a firing temperature of 1350 ° C. or higher, the Q · f value that is decisive for application at a high frequency is known in the conventional polycrystalline MgO. A microwave dielectric porcelain composition is produced that exhibits 400,000 GHz or higher, significantly higher than f≈375,000 GHz. For example, by firing at 1350 ° C., a microwave dielectric ceramic composition exhibiting Q · f≈773,000 GHz which is twice or more of Q · f≈375,000 GHz known for conventional polycrystalline MgO is obtained.
従来、MgOの多結晶体で400000ＧＨｚ以上のQ・f値を得ることは困難であり、多結晶体MgOでの実測値として報告されているQ・f値の最高値は、1650℃で焼結したものでQ・f≒375,000GHzである。従って、本発明のマイクロ波誘電体磁器組成物における上記のQ・f値は、多結晶体としてトップクラスの値であり、1350℃の焼成温度で得られる組成物としては今までに知られていない高い値である。
（マイクロ波誘電体磁器組成物の製造方法の発明）
第３発明によれば、MgOを1350℃以上の低い温度域で焼成して高いＱｆ値を得るという全く新規なマイクロ波誘電体磁器組成物の製造方法が提供される。又、第４発明のように焼成をボロン雰囲気中で行うと、MgOの焼結性が促進され、より緻密な組織を持つ多結晶体が得られる。
Conventionally, it is difficult to obtain a Q · f value of 400,00000000 or more with an MgO polycrystal, and the highest Q · f value reported as an actual measurement value in the polycrystal MgO is sintered at 1650 ° C. Q · f ≒ 375,000 GHz. Therefore, the above-mentioned Q · f value in the microwave dielectric ceramic composition of the present invention is a top-class value as a polycrystal, and has been known so far as a composition obtained at a firing temperature of 1350 ° C. There is no high value.
(Invention of Microwave Dielectric Porcelain Composition Manufacturing Method)
According to the third invention, there is provided a completely novel method for producing a microwave dielectric ceramic composition in which MgO is fired in a low temperature range of 1350 ° C. or higher to obtain a high Qf value. Further, when firing is performed in a boron atmosphere as in the fourth invention, the sinterability of MgO is promoted and a polycrystalline body having a denser structure can be obtained.
MgO自体は従来より良好なQ・f値とεrを示すことが知られているが、高密度な多結晶MgOを得るにはかなり高い焼成温度が必要である。しかし本願発明者らは、B2O3を焼結助剤として用いると、少量（0.01〜0.25モル％）のB2O3のドーピングにより、400,000GHz以上のQ・f値というマイクロ波誘電特性の向上を実現させながら、しかも1350℃まで焼成温度を低減させることが可能であることを見出した。 MgO itself is known to exhibit a better Q · f value and ε r than before, but a considerably high firing temperature is required to obtain high-density polycrystalline MgO. However, the present inventors, when using B 2 O 3 as a sintering aid, have a microwave dielectric characteristic of Q · f value of 400,000 GHz or more due to doping of a small amount (0.01 to 0.25 mol%) of B 2 O 3. It has been found that the firing temperature can be reduced to 1350 ° C. while improving the temperature.
MgO及びB2O3はそれぞれこの技術分野で良く知られた物質であるが、マイクロ波誘電体としてはxMgO-(1-ｘ)B2O3の一般式で示される組成物は知られておらず、当然ながら、xMgO-(1-ｘ)B2O3からなる組成物のマイクロ波誘電特性は未だ国内外で明らかにされていない。 MgO and B 2 O 3 are well-known substances in this technical field, but compositions represented by the general formula xMgO- (1-x) B 2 O 3 are known as microwave dielectrics. Of course, the microwave dielectric properties of the composition comprising xMgO- (1-x) B 2 O 3 have not been clarified yet at home and abroad.
本発明のマイクロ波誘電体磁器組成物の製造方法においては、従来の多結晶MgOに比較して著しく低い、1350℃以上の焼成温度で焼成しても下記のように極めて優れたマイクロ波誘電特性を示す磁器組成物を得るため、設備面、プロセス面で製造コストを有効に節減させることができる。 In the method for producing a microwave dielectric ceramic composition of the present invention, extremely low microwave dielectric properties as shown below even when fired at a firing temperature of 1350 ° C. or higher, which is significantly lower than conventional polycrystalline MgO. In order to obtain a porcelain composition exhibiting the following, manufacturing costs can be effectively reduced in terms of equipment and process.
以下に本発明の実施形態を説明する。本発明の技術的範囲は、これらの実施形態によって制約されない。 Embodiments of the present invention will be described below. The technical scope of the present invention is not limited by these embodiments.
〔マイクロ波誘電体磁器組成物〕
本発明に係るマイクロ波誘電体磁器組成物は少量のB2O3をドーピングした多結晶体MgOであって、xMgO-(1-ｘ)B2O3の一般式で示される組成を有し、この一般式においてｘの値は0.75以上で１未満であり、より好ましくは0.75以上で0.99以下であり、更に好ましくは0.95以上で0.99以下である。
[Microwave dielectric ceramic composition]
A microwave dielectric ceramic composition according to the present invention is a polycrystalline MgO doped with a small amount of B 2 O 3 , and has a composition represented by the general formula of xMgO- (1-x) B 2 O 3. In this general formula, the value of x is 0.75 or more and less than 1, more preferably 0.75 or more and 0.99 or less, and further preferably 0.95 or more and 0.99 or less.
本発明のマイクロ波誘電体磁器組成物については、1350℃で焼成した場合にQ・f≒773,000GHzという極めて高いQ・f値を得ている。
一般的に1350℃以上の温度域で焼成すると400,000GHz以上の高いQ・f値を得ることが期待できる。
The microwave dielectric ceramic composition of the present invention has an extremely high Q · f value of Q · f≈773,000 GHz when fired at 1350 ° C.
In general, firing at a temperature of 1350 ° C or higher can be expected to obtain a high Q · f value of 400,000 GHz or higher.
このように、1350℃という、従来技術に比較して著しい低温域で焼成された多結晶体MgOが、400,000GHz以上、更には700,000GHz以上という極めて高いQ・f値を示すことは、従来技術からは全く予測できない。 In this way, the polycrystalline MgO fired in a markedly low temperature range of 1350 ° C compared to the prior art shows an extremely high Q · f value of 400,000 GHz or more, further 700,000 GHz or more. Cannot be predicted at all.
〔マイクロ波誘電体磁器組成物の製造〕
マイクロ波誘電体磁器組成物は、上記の一般式に従うモル％、即ち0.75〜0.99モル％のMgO粉末と0.01〜0.75モル％のB2O3粉末とを混合して成形した後、必要な温度で焼成を行うことによって得られる。
[Production of microwave dielectric ceramic composition]
Microwave dielectric ceramic composition after molding by mixing mol% according to the above general formula, i.e. a 0.75 to 0.99 mol% of MgO powder and 0.01 to 0.75 mole% B 2 O 3 powder, the required temperature Obtained by baking.
上記の焼成温度は必ずしも限定されないが、例えば1350℃で焼成すると、低温度域焼成による製造プロセス上のメリットを確保したもとで、400,000GHz以上のQ・f値を示す高密度のMgO多結晶体が得られる。又、実施例に示すように1350℃の焼成で700,000GHz以上のQ・f値を示す高密度のMgO多結晶体が得られている。 The firing temperature is not necessarily limited. For example, when firing at 1350 ° C., a high-density MgO polycrystal exhibiting a Q · f value of 400,000 GHz or more while securing the merit in the manufacturing process by firing at a low temperature range The body is obtained. Further, as shown in the Examples, a high-density MgO polycrystal having a Q · f value of 700,000 GHz or more is obtained by firing at 1350 ° C.
1350℃を超える温度域で焼成して高いQ・f値の材料を得ることもできるが、焼成温度が余りに高いと低温度域焼成による製造プロセス上のメリットが失われ、さらに多結晶体のMgOではこれ以上高いQf値を得ることは困難であると考えられる。 Although it is possible to obtain a material with a high Q · f value by firing in a temperature range exceeding 1350 ° C, if the firing temperature is too high, the merit in the manufacturing process due to the low temperature range firing is lost, and furthermore, polycrystalline MgO Thus, it is considered difficult to obtain a higher Qf value.
以下に本発明の実施例を説明する。本発明の技術的範囲はこれらの実施例によって制約されない。 Examples of the present invention will be described below. The technical scope of the present invention is not limited by these examples.
（実施例１：マイクロ波誘電体磁器組成物の製造）
本発明に係るマイクロ波誘電体磁器組成物を、図１にフローチャートを示すような一般的な固相反応法により合成した。以下に具体的に説明する。
(Example 1: Production of microwave dielectric ceramic composition)
The microwave dielectric ceramic composition according to the present invention was synthesized by a general solid phase reaction method as shown in the flowchart of FIG. This will be specifically described below.
純度99.99％のMgOと純度99.9％のB2O3を出発原料とし、一般式xMgO-(1-ｘ)B2O3におけるｘ＝0.75〜１となるようなモル比に基きMgOとB2O3を秤量し、湿式混合した。 MgO and B 2 based on a molar ratio of x = 0.75 to 1 in the general formula xMgO- (1-x) B 2 O 3 , starting from 99.99% pure MgO and 99.9% pure B 2 O 3 O 3 was weighed and wet mixed.
混合後の試料を1000℃で４時間ボロン雰囲気中にて仮焼成した。得られた粉末を再度粉砕及び混合した後、ポリビニルアルコール（PVA）をバインダーとして用いて粉末の造粒を行い、100MPaの一軸加圧で直径12mm、高さ7mmのペレットを成形した。 The mixed sample was calcined at 1000 ° C. for 4 hours in a boron atmosphere. After the obtained powder was pulverized and mixed again, the powder was granulated using polyvinyl alcohol (PVA) as a binder, and pellets having a diameter of 12 mm and a height of 7 mm were formed by uniaxial pressing of 100 MPa.
得られたペレットを1350℃、4hボロン雰囲気中で本焼成し、鏡面研磨した後、Hakki and Coleman法により、比誘電率（εr）と品質係数（Q・f）を評価した。また共振周波数の温度係数（τf）を、20℃と80℃における共振周波数から求めた。 The obtained pellets were calcined at 1350 ° C. for 4 hours in a boron atmosphere, mirror-polished, and then evaluated for relative permittivity (ε r ) and quality factor (Q · f) by the Hakki and Coleman method. The temperature coefficient (τ f ) of the resonance frequency was obtained from the resonance frequencies at 20 ° C. and 80 ° C.
本焼成後の相の同定と微構造観察には、粉末Ｘ線回折（XRPD）と電界放射型走査電子顕微鏡（FE-SEM）をそれぞれ用いた。各試料の焼結性を評価するために、見かけの密度をアルキメデス法により求めた。 Powder X-ray diffraction (XRPD) and field emission scanning electron microscope (FE-SEM) were used for identification and microstructure observation of the phase after the main firing, respectively. In order to evaluate the sinterability of each sample, the apparent density was determined by the Archimedes method.
（実施例２：マイクロ波誘電体磁器組成物の解析と評価）
上記の実施例１にて合成された磁器組成物（xMgO-(1-ｘ)B2O3）の粉末Ｘ線回折パターンを図２に示す。図２から明らかなように、ｘ＝0.75〜0.99の範囲においてMgOとMg3B2O6の生成が認められた。更に、組成ｘの増加に伴いMg3B2O6の回折強度が弱くなり、その生成量が減少し、ｘ＝0.99では微量のMg3B2O6が検出された。また、見かけの密度（Da）は、組成ｘの増加に伴い増加傾向を示し、ｘ＝0.95ではほぼ一定の見かけの密度が得られた。
(Example 2: Analysis and evaluation of microwave dielectric ceramic composition)
The powder X-ray diffraction pattern of the porcelain composition (xMgO- (1-x) B 2 O 3 ) synthesized in Example 1 is shown in FIG. As apparent from FIG. 2, the formation of MgO and Mg 3 B 2 O 6 was observed in the range of x = 0.75 to 0.99. Further, as the composition x increased, the diffraction intensity of Mg 3 B 2 O 6 became weaker and the amount of formation thereof decreased, and a trace amount of Mg 3 B 2 O 6 was detected at x = 0.99. Further, the apparent density (D a ) showed an increasing tendency as the composition x increased, and a substantially constant apparent density was obtained at x = 0.95.
次に（xMgO-(1-ｘ)B2O3）の磁器組成物（x＝0.80，0.95，0.99）のFE-SEM写真を図３に示す。これらの写真から、組成ｘの増加に伴い結晶粒の粒径が大きくなり、微量のボロンドープにより焼結性が促進され緻密な組織を持つ多結晶体が得られることが明らかとなった。即ち、微量のボロンドープが1350℃におけるMgOの焼結性を促進するのに有効であると考えられる。 Next, FIG. 3 shows an FE-SEM photograph of the porcelain composition (xMgO- (1-x) B 2 O 3 ) (x = 0.80, 0.95, 0.99). From these photographs, it has been clarified that the grain size of the crystal grains increases as the composition x increases, and a polycrystalline body having a dense structure can be obtained by promoting the sinterability by a small amount of boron dope. That is, it is considered that a small amount of boron dope is effective in promoting the sinterability of MgO at 1350 ° C.
マイクロ波誘電特性と見かけの密度を一覧表にした表１から明らかなように、磁器組成物（xMgO-(1-ｘ)B2O3）の品質係数（Q・f）は組成ｘの増加に伴い増加傾向を示しており、ｘ＝0.99である場合においてQ・f＝773,691GHzが得られている。 As is clear from Table 1 that lists the microwave dielectric properties and the apparent density, the quality factor (Q · f) of the porcelain composition (xMgO- (1-x) B 2 O 3 ) increases with the composition x. In the case of x = 0.99, Q · f = 773,691 GHz is obtained.
なお、図４では、表１に示したデータに基き、組成ｘの増加に伴う品質係数（Q・f）の増加の関係をグラフで示した。更に図５では、従来報告されている数多くの多結晶体の誘電特性を図中の「○」のプロットで示し、本発明の磁器組成物（ｘ＝0.99）の誘電特性を図中の「●」のプロットで示した。高い品質係数（Q・f）と低い比誘電率が求められる中で、本発明の磁器組成物の位置づけが明瞭に見て取れる。 In addition, in FIG. 4, based on the data shown in Table 1, the relationship of the increase in the quality factor (Q · f) with the increase in the composition x is shown in a graph. Further, in FIG. 5, the dielectric properties of a number of conventionally reported polycrystals are shown by plots of “◯” in the figure, and the dielectric properties of the porcelain composition of the present invention (x = 0.99) are represented by “●” in the figure. "Is shown in the plot. While the high quality factor (Q · f) and the low relative dielectric constant are required, the position of the ceramic composition of the present invention can be clearly seen.
本発明により、高いQ・f値と低いεrを持つマイクロ波誘電体磁器組成物が低い焼成温度により提供される。 According to the present invention, a microwave dielectric ceramic composition having a high Q · f value and a low ε r is provided at a low firing temperature.
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| CN115196945A (en) * | 2022-08-12 | 2022-10-18 | 佛山科学技术学院 | Method for preparing microwave ceramic block based on cold sintering assisted low-temperature densification |
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| CN115196945A (en) * | 2022-08-12 | 2022-10-18 | 佛山科学技术学院 | Method for preparing microwave ceramic block based on cold sintering assisted low-temperature densification |
| CN115196945B (en) * | 2022-08-12 | 2023-04-07 | 佛山科学技术学院 | Method for preparing microwave ceramic block based on cold sintering assisted low-temperature densification |
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