JP2010188385A - Method of manufacturing semiconductor wafer - Google Patents
Method of manufacturing semiconductor wafer Download PDFInfo
- Publication number
- JP2010188385A JP2010188385A JP2009036033A JP2009036033A JP2010188385A JP 2010188385 A JP2010188385 A JP 2010188385A JP 2009036033 A JP2009036033 A JP 2009036033A JP 2009036033 A JP2009036033 A JP 2009036033A JP 2010188385 A JP2010188385 A JP 2010188385A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- laser beam
- intermediate product
- semiconductor
- peeling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 147
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000013067 intermediate product Substances 0.000 claims abstract description 47
- 230000004075 alteration Effects 0.000 claims abstract description 10
- 239000000047 product Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 16
- 230000002708 enhancing effect Effects 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 9
- 238000009751 slip forming Methods 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 2
- 230000003014 reinforcing effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 110
- 238000000034 method Methods 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000004830 Super Glue Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- FGBJXOREULPLGL-UHFFFAOYSA-N ethyl cyanoacrylate Chemical compound CCOC(=O)C(=C)C#N FGBJXOREULPLGL-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
本発明は、薄い半導体ウェーハを切り出して製造する半導体ウェーハの製造方法に関するものである。 The present invention relates to a method for manufacturing a semiconductor wafer by cutting and manufacturing a thin semiconductor wafer.
従来、シリコンウェーハに代表される半導体ウェーハを製造する場合には、図示しないが、石英るつぼのシリコン融液から凝固した円柱形のインゴットを適切な長さのブロックに切断してその周縁部を目標の直径になるよう研削し、その後、ブロック化されたインゴットをワイヤソーによりウェーハ形にスライスして半導体ウェーハを製造するようにしている（特許文献１、２、３参照）。 Conventionally, when manufacturing a semiconductor wafer typified by a silicon wafer, although not shown, a cylindrical ingot solidified from a silicon melt in a quartz crucible is cut into blocks of appropriate lengths, and the peripheral edge is targeted. Then, the semiconductor wafer is manufactured by slicing the block-shaped ingot into a wafer shape with a wire saw (see Patent Documents 1, 2, and 3).
このようにして製造された半導体ウェーハは、前工程で回路パターンの形成等、各種の処理が順次施されて後工程に供され、この後工程で裏面がバックグラインド処理されて薄片化が図られることにより、厚さが約７５０μｍから１００μｍ以下、例えば７５μｍや５０μｍ程度に調整される。 The semiconductor wafer thus manufactured is subjected to various processes such as formation of a circuit pattern in the previous process in order, and then provided to the subsequent process. In this subsequent process, the back surface is back-grinded and thinned. Accordingly, the thickness is adjusted to about 750 μm to 100 μm or less, for example, about 75 μm or 50 μm.
従来における半導体ウェーハは、以上のように製造され、インゴットがワイヤソーにより切断され、しかも、切断の際にワイヤソーの太さ以上の切り代が必要となるので、厚さ０．１ｍｍ以下の薄い半導体ウェーハを製造することが非常に困難であり、製品率も向上しないという問題がある。また、半導体ウェーハにバックグラインド処理を施す場合には、作業に長時間を要し、微細な研削カスが半導体ウェーハの回路パターンを汚染するおそれがある。 Conventional semiconductor wafers are manufactured as described above, and the ingot is cut with a wire saw, and a cutting allowance larger than the thickness of the wire saw is required for cutting, so a thin semiconductor wafer with a thickness of 0.1 mm or less It is very difficult to manufacture the product, and the product rate is not improved. Further, when the backgrinding process is performed on the semiconductor wafer, it takes a long time for the work, and there is a possibility that the fine grinding residue contaminates the circuit pattern of the semiconductor wafer.
また近年、次世代の半導体として、硬度が大きく、熱伝導率も高いシリコンカーバイトが鋭意検討・開発されているが、このシリコンカーバイトの場合には、シリコンよりも硬度が大きい関係上、インゴットをワイヤソーにより容易にスライスすることができない事態が予想される。 In recent years, silicon carbide with high hardness and high thermal conductivity has been intensively studied and developed as the next-generation semiconductor. However, in the case of silicon carbide, the ingot has a higher hardness than silicon. It is expected that the wire cannot be easily sliced with a wire saw.
本発明は上記に鑑みなされたもので、薄い半導体ウェーハを比較的短時間で容易に製造することができ、しかも、製品率を向上させることのできる半導体ウェーハの製造方法を提供することを目的としている。 The present invention has been made in view of the above, and it is an object of the present invention to provide a method of manufacturing a semiconductor wafer that can easily manufacture a thin semiconductor wafer in a relatively short time and that can improve the product rate. Yes.
本発明においては上記課題を解決するため、半導体の表面にレーザ光線を集光手段を介して照射することにより、半導体ウェーハを製造する半導体ウェーハの製造方法であって、
半導体の表面と集光手段との間にレーザ光線用の収差増強材を介在し、この状態でレーザ光線を照射して半導体の内部に集光点を形成し、半導体と集光点とを相対的に移動させ、半導体の内部に加工領域を半導体の表面に平行に形成することにより、半導体ウェーハの中間品を形成し、その後、加工領域を境に中間品を剥離開始領域から剥離して半導体ウェーハを得ることを特徴としている。
In the present invention, in order to solve the above-mentioned problem, a semiconductor wafer manufacturing method for manufacturing a semiconductor wafer by irradiating the surface of the semiconductor with a laser beam through a condensing means,
A laser beam aberration enhancing material is interposed between the surface of the semiconductor and the focusing means, and in this state, a laser beam is irradiated to form a focusing point inside the semiconductor, and the semiconductor and the focusing point are relative to each other. The semiconductor product is formed in parallel with the surface of the semiconductor to form an intermediate product of the semiconductor wafer, and then the intermediate product is separated from the separation start region with the processing region as a boundary. It is characterized by obtaining a wafer.
なお、中間品の剥離開始領域に対するレーザ光線の照射量を、剥離開始領域以外の他領域に対するレーザ光線の照射量の２倍以上とすることができる。
また、中間品を剥離開始領域から剥離する前に、半導体の一部を除去して剥離開始領域の側面に加工領域を露出させることができる。
さらに、半導体と中間品のうち、少なくとも中間品の表面に剥離補助基材を固定し、この剥離補助基材と共に中間品を剥離して半導体ウェーハを得ることも可能である。
In addition, the irradiation amount of the laser beam with respect to the peeling start area | region of an intermediate product can be made into 2 times or more of the irradiation amount of the laser beam with respect to other area | regions other than a peeling start area | region.
In addition, before the intermediate product is peeled from the peeling start region, a part of the semiconductor can be removed to expose the processing region on the side surface of the peeling start region.
Furthermore, it is possible to obtain a semiconductor wafer by fixing a peeling assisting base material on at least the surface of the intermediate product between the semiconductor and the intermediate product and peeling the intermediate product together with the peeling assisting base material.
ここで、特許請求の範囲における半導体には、少なくとも適当な長さにブロック化されたインゴットや厚い半導体ウェーハが含まれる。また、集光手段には、少なくとも凹面鏡や各種レンズ等が含まれる。収差増強材として、必要数のガラス板を適宜使用することができる。さらに、剥離補助基材は、半導体や中間品に着脱自在に粘着する弾性変形可能なシートやフィルム、これらを備えた弾性変形可能な板等が該当する。 Here, the semiconductor in the scope of claims includes at least an ingot and a thick semiconductor wafer blocked to an appropriate length. The light collecting means includes at least a concave mirror and various lenses. As the aberration enhancing material, a necessary number of glass plates can be appropriately used. Furthermore, the peeling assisting base material corresponds to an elastically deformable sheet or film that is detachably adhered to a semiconductor or an intermediate product, an elastically deformable plate provided with these, and the like.
本発明によれば、切り代が不要で微細加工に適する非接触のレーザ光線により半導体ウェーハの中間品を形成し、この中間品を剥離することで、薄い半導体ウェーハを得ることができる。また、収差増強材を介在してレーザ光線の集光スポットの間隔を拡大するので、レーザ光線の照射回数を減少させることができる。 According to the present invention, a thin semiconductor wafer can be obtained by forming an intermediate product of a semiconductor wafer with a non-contact laser beam that is suitable for microfabrication and does not require a cutting margin, and peeling the intermediate product. In addition, since the interval between the converging spots of the laser beam is increased via the aberration enhancing material, the number of times of laser beam irradiation can be reduced.
本発明によれば、半導体の肉厚に拘わらず、対応可能なレーザ光線を用いるので、薄い半導体ウェーハを比較的短時間で容易に製造することができ、しかも、製品率を向上させることができるという効果がある。また、半導体の表面と集光手段との間に、レーザ光線用の収差増強材を介在するので、集光スポットを拡大してレーザ光線の照射回数を減少させることができる。 According to the present invention, since a compatible laser beam is used regardless of the thickness of the semiconductor, a thin semiconductor wafer can be easily manufactured in a relatively short time, and the product rate can be improved. There is an effect. Further, since the aberration enhancing material for laser beam is interposed between the semiconductor surface and the condensing means, it is possible to enlarge the condensing spot and reduce the number of times of laser beam irradiation.
また、剥離開始領域の側面に加工領域を露出させれば、剥離作業の基点を得ることができるので、半導体ウェーハの中間品を容易に剥離することができる。
さらに、半導体と中間品のうち、少なくとも中間品の表面に剥離補助基材を固定し、この剥離補助基材と共に中間品を剥離すれば、汚染を招くことなく、中間品全体を均一に剥離し、損傷部分の少ない薄い半導体ウェーハを得ることが可能になる。
Further, if the processing area is exposed on the side surface of the peeling start area, the base point of the peeling work can be obtained, so that the intermediate product of the semiconductor wafer can be easily peeled off.
Furthermore, if the peeling assisting base material is fixed to at least the surface of the intermediate product between the semiconductor and the intermediate product, and the intermediate product is peeled off together with the peeling assisting base material, the entire intermediate product is uniformly peeled without causing contamination. It becomes possible to obtain a thin semiconductor wafer with few damaged parts.
以下、図面を参照して本発明に係る半導体ウェーハの製造方法の好ましい実施形態を説明すると、本実施形態における半導体ウェーハの製造方法は、基本的には図１や図２に示すように、厚い半導体ウェーハ１の表面にレーザ光線２を集光レンズ３を介して照射することにより、半導体ウェーハ１の内部に集光点４を形成し、半導体ウェーハ１と集光点４を相対的に移動させ、半導体ウェーハ１の内部に加工領域５を形成することにより、薄い半導体ウェーハの中間品６を形成し、その後、加工領域５を境界面として中間品６を剥離補助板７と共に剥離開始領域９から剥離して薄い半導体ウェーハを製造するようにしている。 Hereinafter, a preferred embodiment of a method for producing a semiconductor wafer according to the present invention will be described with reference to the drawings. The method for producing a semiconductor wafer in the present embodiment is basically thick as shown in FIGS. By irradiating the surface of the semiconductor wafer 1 with the laser beam 2 through the condenser lens 3, a condensing point 4 is formed inside the semiconductor wafer 1, and the semiconductor wafer 1 and the condensing point 4 are moved relatively. The intermediate product 6 of the thin semiconductor wafer is formed by forming the processing region 5 inside the semiconductor wafer 1, and then the intermediate product 6 together with the peeling auxiliary plate 7 from the peeling start region 9 with the processing region 5 as a boundary surface. A thin semiconductor wafer is manufactured by peeling.
厚い半導体ウェーハ１は、特に限定されるものではないが、例えばφ３００ｍｍの厚いシリコンウェーハからなり、レーザ光線２の照射される表面が予め平坦化されていることが好ましい。 The thick semiconductor wafer 1 is not particularly limited, but is preferably made of, for example, a thick silicon wafer having a diameter of 300 mm, and the surface irradiated with the laser beam 2 is preferably planarized in advance.
レーザ光線２は、半導体ウェーハ１の周面ではなく、表面に照射装置から集光レンズ３を介して照射される。このレーザ光線２は、例えばパルス幅が１μｍｓ以下のパルスレーザ光からなり、８００ｎｍ以上の波長、好ましくは１０００ｎｍ以上の波長が選択され、ＹＡＧレーザ等が好適に使用される。 The laser beam 2 is irradiated not on the peripheral surface of the semiconductor wafer 1 but on the surface from the irradiation device via the condenser lens 3. The laser beam 2 is composed of, for example, a pulse laser beam having a pulse width of 1 μms or less, and a wavelength of 800 nm or more, preferably 1000 nm or more is selected, and a YAG laser or the like is preferably used.
レーザ光線２の波長が８００ｎｍ以上なのは、８００ｎｍ以上であれば、半導体ウェーハ１に対するレーザ光線２の透過性を向上させ、半導体ウェーハ１の内部に加工領域５を確実に形成することができるからである。レーザ光線２は、半導体ウェーハ１の表面の周縁部に照射されたり、あるいは半導体ウェーハ１の表面の中心部から周縁部方向に照射される。 The reason why the wavelength of the laser beam 2 is 800 nm or more is that if the wavelength is 800 nm or more, the transmittance of the laser beam 2 with respect to the semiconductor wafer 1 can be improved and the processing region 5 can be reliably formed inside the semiconductor wafer 1. . The laser beam 2 is applied to the peripheral part of the surface of the semiconductor wafer 1 or from the central part of the surface of the semiconductor wafer 1 to the peripheral part.
集光レンズ３は、半導体ウェーハ１の内部にレーザ光線２のエネルギーを効率的に集中させるよう機能する。この集光レンズ３の開口数（ＮＡ）は、半導体ウェーハ１の表面におけるアブレーション等による損失を防止する観点から、大きな数値、具体的には０．５以上、０．５〜０．８が好ましい。 The condenser lens 3 functions to efficiently concentrate the energy of the laser beam 2 inside the semiconductor wafer 1. The numerical aperture (NA) of the condenser lens 3 is preferably a large numerical value, specifically 0.5 or more and 0.5 to 0.8 from the viewpoint of preventing loss due to ablation or the like on the surface of the semiconductor wafer 1. .
半導体ウェーハ１と集光点４とは相対的に移動するが、この相対的な移動には、図示しない移動装置が使用される。移動装置は、特に限定されるものではないが、例えば半導体ウェーハ１を水平に搭載する回転可能なステージやＸＹステージ等が使用される。 Although the semiconductor wafer 1 and the condensing point 4 move relatively, a moving device (not shown) is used for this relative movement. The moving device is not particularly limited. For example, a rotatable stage or an XY stage on which the semiconductor wafer 1 is horizontally mounted is used.
剥離補助板７は、特に限定されるものではないが、例えば半導体ウェーハ１よりも大きい平板からなり、薄い半導体ウェーハの中間品６に対向する平坦な対向面に、自己粘着性のシート８が粘着される。この剥離補助板７として、アクリル板等を適宜使用することができる。 The auxiliary peeling plate 7 is not particularly limited. For example, the peeling auxiliary plate 7 is made of a flat plate larger than the semiconductor wafer 1, and the self-adhesive sheet 8 adheres to a flat facing surface facing the intermediate product 6 of the thin semiconductor wafer. Is done. As this peeling auxiliary plate 7, an acrylic plate or the like can be used as appropriate.
上記において、厚い半導体ウェーハ１を分割して薄い半導体ウェーハを製造する場合には、先ず、移動装置のステージに厚い半導体ウェーハ１を水平に搭載し、この半導体ウェーハ１の表面上方にレーザ光線２の照射装置を配置し、ステージを回転させつつ照射装置から半導体ウェーハ１の表面周縁部にレーザ光線２を集光レンズ３を介して照射する（図１参照）。 In the above, when a thin semiconductor wafer is manufactured by dividing the thick semiconductor wafer 1, first, the thick semiconductor wafer 1 is horizontally mounted on the stage of the moving device, and the laser beam 2 is placed above the surface of the semiconductor wafer 1. An irradiation device is arranged, and the laser beam 2 is irradiated from the irradiation device to the peripheral edge of the surface of the semiconductor wafer 1 through the condenser lens 3 while rotating the stage (see FIG. 1).
すると、集光されたレーザ光線２は、半導体ウェーハ１の表面で屈折し、この半導体ウェーハ１の内部に集光点４を形成して変質させ、半導体ウェーハ１の回転に伴い、半導体ウェーハ１の内部に加工領域５を半導体ウェーハ１の表面に平行に連続的に形成し、この加工領域５の連続形成により、薄い半導体ウェーハの中間品６が平面円形に区画形成される。 Then, the condensed laser beam 2 is refracted on the surface of the semiconductor wafer 1 to form a condensing point 4 inside the semiconductor wafer 1 to change its quality, and as the semiconductor wafer 1 rotates, A processing region 5 is continuously formed in parallel inside the surface of the semiconductor wafer 1, and the intermediate product 6 of a thin semiconductor wafer is partitioned and formed into a planar circle by the continuous formation of the processing region 5.
なお、レーザ光線２の照射量は、中間品６の剥離を確実にする観点から、中間品６の剥離開始領域９に対する照射量が剥離開始領域９以外の他領域に対する照射量の２倍以上に設定される。 The irradiation amount of the laser beam 2 is set so that the irradiation amount of the intermediate product 6 to the peeling start region 9 is more than twice the irradiation amount to other regions other than the peeling start region 9 from the viewpoint of ensuring the peeling of the intermediate product 6 Is set.
こうして薄い半導体ウェーハの中間品６を区画形成したら、中間品６の全表面に剥離補助板７を着脱自在に粘着固定し、その後、連続した加工領域５を境界面として中間品６を剥離補助板７と共に剥離開始領域９から上方に剥離（図２参照）すれば、半導体ウェーハ１から中間品６が剥離することにより、中間品６が薄い半導体ウェーハとなる。 When the intermediate product 6 of the thin semiconductor wafer is partitioned and formed in this way, the peeling auxiliary plate 7 is detachably attached and fixed to the entire surface of the intermediate product 6, and then the intermediate product 6 is peeled off using the continuous processing region 5 as a boundary surface. 7 and peeling upward from the peeling start area 9 (see FIG. 2), the intermediate product 6 is peeled from the semiconductor wafer 1, whereby the intermediate product 6 becomes a thin semiconductor wafer.
なお、剥離補助板７を粘着固定する際、移動装置のステージから取り外した半導体ウェーハ１の裏面に別の剥離補助板７を着脱自在に粘着固定し、中間品６の剥離を容易にしても良い。 When the auxiliary peeling plate 7 is adhesively fixed, another intermediate auxiliary plate 7 may be detachably attached to the back surface of the semiconductor wafer 1 removed from the stage of the moving device to facilitate the peeling of the intermediate product 6. .
上記製造方法によれば、インゴットをワイヤソーにより切断するのではなく、接触加工の限界を超えることのできるレーザ光線２により、半導体ウェーハ１を薄く形成して剥離するので、厚さ０．１ｍｍ以下の薄い半導体ウェーハをも短時間で容易に製造することができ、しかも、薄い半導体ウェーハを得ることができるので、無駄が少なく、製品率を著しく向上させることができる。 According to the above manufacturing method, the ingot is not cut with a wire saw, but the semiconductor wafer 1 is thinly formed and peeled off by the laser beam 2 that can exceed the limit of contact processing, so that the thickness is 0.1 mm or less. A thin semiconductor wafer can be easily manufactured in a short time, and since a thin semiconductor wafer can be obtained, there is little waste and the product rate can be significantly improved.
また、前工程の段階から薄い半導体ウェーハを容易に製造することができるので、半導体ウェーハにバックグラインド処理を長時間施す必要がなく、微細な研削カスが半導体ウェーハの回路パターンを汚染するおそれもない。また、半導体ウェーハ１やインゴットが硬度の大きいシリコンカーバイト製の場合にも、薄い半導体ウェーハを容易に製造することが可能になる。さらに、中間品６を指等で剥離するのではなく、中間品６の全表面に剥離補助板７を粘着固定して剥離するので、中間品６全体を均一に剥離し、損傷部分のない半導体ウェーハを得ることが可能になる。 In addition, since a thin semiconductor wafer can be easily manufactured from the stage of the previous process, there is no need to subject the semiconductor wafer to a back grinding process for a long time, and there is no possibility that fine grinding residue contaminates the circuit pattern of the semiconductor wafer. . Further, even when the semiconductor wafer 1 or the ingot is made of silicon carbide having a high hardness, a thin semiconductor wafer can be easily manufactured. Further, the intermediate product 6 is not peeled off with fingers or the like, but the peeling auxiliary plate 7 is peeled and fixed to the entire surface of the intermediate product 6, so that the entire intermediate product 6 is peeled uniformly, and there is no damaged part. It becomes possible to obtain a wafer.
さて、本実施形態においては集光レンズ３を使用するが、開口数が大きい集光レンズ３を使用する場合には、レーザ光線２の焦点の集光スポットが小さくなるので、半導体ウェーハ１の内部に加工領域５を連続形成するためには、レーザ光線２の照射回数を増やす必要がある。 In the present embodiment, the condensing lens 3 is used. However, when the condensing lens 3 having a large numerical aperture is used, the condensing spot at the focal point of the laser beam 2 becomes small. In order to continuously form the processing region 5, it is necessary to increase the number of times of irradiation with the laser beam 2.
そこで、本実施形態においては図３に示すように、厚い半導体ウェーハ１の表面と集光レンズ３との間に、レーザ光線２用の収差増強材である収差増強ガラス板１０を介在させ、この収差増強ガラス板１０を介在させた状態でレーザ光線２を照射することにより、レーザ光線２の照射回数を減少させるようにしている。
収差増強ガラス板１０は、特に限定されるものではないが、例えば厚いカバーガラスやスライドガラス等が使用される。
Therefore, in the present embodiment, as shown in FIG. 3, an aberration-enhancing glass plate 10 that is an aberration-enhancing material for the laser beam 2 is interposed between the surface of the thick semiconductor wafer 1 and the condenser lens 3. By irradiating the laser beam 2 with the aberration-enhancing glass plate 10 interposed, the number of times of irradiation with the laser beam 2 is reduced.
The aberration-enhancing glass plate 10 is not particularly limited. For example, a thick cover glass or a slide glass is used.
このように本実施形態によれば、レーザ光線２を単に照射するのではなく、収差増強ガラス板１０を介在して集光スポットを拡大し、集光スポットの間隔を大きくするので、上記効果の他、レーザ光線２の照射回数の削減が大いに期待できるのは明らかである。 As described above, according to the present embodiment, the laser beam 2 is not simply irradiated, but the condensing spots are enlarged through the aberration-enhancing glass plate 10 to increase the interval between the condensing spots. In addition, it is obvious that the number of times of irradiation with the laser beam 2 can be greatly reduced.
次に、図４ないし図６は本発明の第２の実施形態を示すもので、この場合には、半導体ウェーハの中間品６を剥離開始領域９から剥離する前に、厚い半導体ウェーハ１の表面や周面を一部除去し、剥離開始領域９の側面（周面）に加工領域５を露出させて中間品６の剥離を容易化するようにしている。 Next, FIGS. 4 to 6 show a second embodiment of the present invention. In this case, before the intermediate product 6 of the semiconductor wafer is peeled from the peeling start region 9, the surface of the thick semiconductor wafer 1 is shown. In addition, a part of the peripheral surface is removed, and the processing region 5 is exposed on the side surface (peripheral surface) of the separation start region 9 to facilitate the separation of the intermediate product 6.
加工領域５を露出させる方法としては、半導体ウェーハ１の表面から加工領域５までの深さを集光レンズ３の位置や屈折率から予測し、半導体ウェーハ１の周面にレーザ光線２を照射して一部除去する方法、半導体ウェーハ１の表面をダイヤモンドカッタやレーザーアブレーション等の手段により一部除去する方法等があげられる。その他の部分については、上記実施形態と略同様であるので説明を省略する。 As a method for exposing the processing region 5, the depth from the surface of the semiconductor wafer 1 to the processing region 5 is predicted from the position and refractive index of the condenser lens 3, and the peripheral surface of the semiconductor wafer 1 is irradiated with the laser beam 2. And a method of partially removing the surface of the semiconductor wafer 1 by means such as diamond cutter or laser ablation. The other parts are substantially the same as those in the above embodiment, and thus description thereof is omitted.
本実施形態における効果を具体的に説明すると、一般的に集光されたレーザ光線２は、半導体ウェーハ１の表面で屈折し、大気中の焦点よりも深い位置で集光スポットを形成する（図４参照）。このため、半導体ウェーハ１の外部から表面にレーザ光線２を移して照射すると、大気中の焦点の集光スポットは、半導体ウェーハ１の内部でより深い位置に急速に移動することとなる。したがって、剥離開始領域９の側面に加工領域５が露出せず、中間品６の剥離が困難になるおそれがある。 The effect in the present embodiment will be specifically described. Generally, the focused laser beam 2 is refracted on the surface of the semiconductor wafer 1 to form a focused spot at a position deeper than the focal point in the atmosphere (FIG. 4). For this reason, when the laser beam 2 is transferred to the surface from the outside of the semiconductor wafer 1 and irradiated, the focused spot in the atmosphere rapidly moves to a deeper position inside the semiconductor wafer 1. Therefore, the processing region 5 is not exposed on the side surface of the separation start region 9, and the intermediate product 6 may be difficult to separate.
本実施形態によれば、厚い半導体ウェーハ１の周面を一部除去（図５参照）したり、厚い半導体ウェーハ１の表面を一部除去（図６参照）し、剥離開始領域９の側面に加工領域５を露出させ、剥離作業の基点とするので、中間品６を円滑かつ容易に剥離することができるのは明らかである。 According to the present embodiment, a part of the peripheral surface of the thick semiconductor wafer 1 is removed (see FIG. 5), or a part of the surface of the thick semiconductor wafer 1 is removed (see FIG. 6). It is clear that the intermediate product 6 can be peeled smoothly and easily because the processing region 5 is exposed and used as a base point of the peeling work.
以下、本発明に係る半導体ウェーハの製造方法の実施例を比較例と共に説明する。 Hereinafter, an example of a manufacturing method of a semiconductor wafer concerning the present invention is described with a comparative example.
先ず、ＸＹステージに厚さ０．６２５ｍｍの半導体ウェーハを搭載し、この半導体ウェーハの表面に、レーザ光線を焦点距離が２ｍｍで開口数が０．８の集光レンズを介して照射した。
レーザ光線として、波長１０６４μｍ、パルス幅２００ｎ秒、１パルス当たりの照射エネルギーが５μＪのレーザ光線を選択した。このレーザ光線は、半導体ウェーハの表面ＸＹ方向に１パルス当たり１μピッチで照射した。また、集光レンズには、０．１５ｍｍの厚さを有する市販のカバーガラスを収差増強材として取り付けた。
First, a 0.625 mm thick semiconductor wafer was mounted on an XY stage, and the surface of the semiconductor wafer was irradiated with a laser beam through a condenser lens having a focal length of 2 mm and a numerical aperture of 0.8.
A laser beam having a wavelength of 1064 μm, a pulse width of 200 nsec, and an irradiation energy of 5 μJ per pulse was selected as the laser beam. This laser beam was irradiated at a pitch of 1 μm per pulse in the surface XY direction of the semiconductor wafer. In addition, a commercially available cover glass having a thickness of 0.15 mm was attached to the condenser lens as an aberration enhancing material.
レーザ光線の照射に際しては、半導体ウェーハの表面に集光レンズの焦点を結ばせた後、集光レンズを半導体ウェーハ側に０．１ｍｍ移動（ＤＥＦＯＣＵＳ）させ、レーザ光線１パルス当たり１μピッチでＸＹ方向に半導体ウェーハを移動させ、半導体ウェーハの内部に二次元の加工領域を半導体ウェーハの表面に平行に形成することにより、薄い半導体ウェーハの中間品を形成した。 When irradiating the laser beam, after the focusing lens is focused on the surface of the semiconductor wafer, the focusing lens is moved 0.1 mm toward the semiconductor wafer (DEFOCUS), and the laser beam is pulsed at 1 μ pitch in the XY direction. A thin semiconductor wafer intermediate product was formed by moving the semiconductor wafer and forming a two-dimensional processing region inside the semiconductor wafer parallel to the surface of the semiconductor wafer.
次いで、集光レンズを半導体ウェーハから０．０３ｍｍ離し、レーザ光線の照射エリアの１辺を１パルス当たり１μピッチでレーザ光線を１回照射した（重複照射）。レーザ光線を照射したら、照射エリアを含むよう半導体ウェーハを劈開し、劈開面を顕微鏡で観察した。すると、加工領域が形成されているのを確認した。 Next, the condensing lens was separated from the semiconductor wafer by 0.03 mm, and one side of the laser beam irradiation area was irradiated once with 1 μm pitch per pulse (overlapping irradiation). When the laser beam was irradiated, the semiconductor wafer was cleaved so as to include the irradiation area, and the cleavage plane was observed with a microscope. Then, it confirmed that the process area | region was formed.
次いで、半導体ウェーハの表裏面に、厚さ３ｍｍのアクリル板をシアノアクリレート系の接着剤を介してそれぞれ接着し、加工領域の露出面側から一対のアクリル板を剥離したところ、加工領域を境に薄い半導体ウェーハの中間品が剥離した。 Next, an acrylic plate having a thickness of 3 mm was bonded to the front and back surfaces of the semiconductor wafer via a cyanoacrylate adhesive, and the pair of acrylic plates were peeled off from the exposed surface side of the processing region. An intermediate product of a thin semiconductor wafer was peeled off.
重複照射を省略し、その他は実施例１と同様とした。レーザ光線を照射したら、照射エリアを含むよう半導体ウェーハを劈開し、劈開面を顕微鏡で観察したところ、加工領域が形成されているのを確認した。 Overlapping irradiation was omitted, and the others were the same as in Example 1. When the laser beam was irradiated, the semiconductor wafer was cleaved so as to include the irradiation area, and the cleavage plane was observed with a microscope, and it was confirmed that a processing region was formed.
半導体ウェーハの表裏面に、厚さ３ｍｍのアクリル板を接着剤を介してそれぞれ接着し、加工領域の露出面側から一対のアクリル板を剥離したところ、加工領域を境に薄い中間品の一部が剥離した。 A 3mm thick acrylic plate is bonded to the front and back surfaces of a semiconductor wafer with an adhesive, and a pair of acrylic plates are peeled off from the exposed surface of the processing area. Peeled off.
レーザ光線と集光レンズをそれぞれ変更し、その他は実施例１と同様とした。レーザ光線として、波長１０５０μｍ、パルス幅５００ｆ秒、１パルス当たりの照射エネルギーが３μＪのレーザ光線を選択した。また、集光レンズは、焦点距離を１．８ｍｍ、開口数を０．８とした。 The laser beam and the condensing lens were changed, and the others were the same as in Example 1. A laser beam having a wavelength of 1050 μm, a pulse width of 500 fsec, and an irradiation energy of 3 μJ per pulse was selected as the laser beam. Further, the condenser lens has a focal length of 1.8 mm and a numerical aperture of 0.8.
レーザ光線の照射後、照射エリアを含むよう半導体ウェーハを劈開し、劈開面を顕微鏡で観察したところ、加工領域が形成されていなかった。
また、半導体ウェーハの表裏面に、厚さ３ｍｍの鋼板をバックグラインド用ワックスを介してそれぞれ接着し、その後、一対の鋼板を剥離したが、鋼板のみが剥離し、半導体ウェーハを二枚に割ることができなかった。
After irradiation with the laser beam, the semiconductor wafer was cleaved so as to include the irradiation area, and the cleavage plane was observed with a microscope. As a result, no processing region was formed.
In addition, a steel plate with a thickness of 3 mm was bonded to the front and back surfaces of the semiconductor wafer via a backgrinding wax, and then a pair of steel plates was peeled off. However, only the steel plates were peeled off, and the semiconductor wafer was divided into two. I could not.
レーザ光線のパルス幅を６０ｎ秒に変更し、その他は実施例１と同様とした。レーザ光線の照射後、照射エリアを含むよう半導体ウェーハを劈開し、劈開面を顕微鏡観察したが、加工領域の確認ができなかった。
また、半導体ウェーハの表裏面に、厚さ３ｍｍのアクリル板をシアノアクリレート系の接着剤を介してそれぞれ接着し、その後、一対のアクリル板を剥離したが、アクリル板のみが剥離し、半導体ウェーハを二枚に割ることができなかった。
The pulse width of the laser beam was changed to 60 ns, and the others were the same as in Example 1. After irradiation with the laser beam, the semiconductor wafer was cleaved so as to include the irradiated area, and the cleaved surface was observed with a microscope, but the processing region could not be confirmed.
In addition, an acrylic plate having a thickness of 3 mm was bonded to the front and back surfaces of the semiconductor wafer via a cyanoacrylate adhesive, and then the pair of acrylic plates was peeled off. I couldn't split it into two.
１ 厚い半導体ウェーハ（半導体）
２ レーザ光線
３ 集光レンズ（集光手段）
４ 集光点
５ 加工領域
６ 中間品
７ 剥離補助板（剥離補助基材）
８ シート
９ 剥離開始領域
１０ 収差増強ガラス板（収差増強材）
1 Thick semiconductor wafer (semiconductor)
2 Laser beam 3 Condensing lens (Condensing means)
4 Focusing point 5 Processing area 6 Intermediate product 7 Peeling auxiliary plate (Peeling auxiliary base material)
8 Sheet 9 Peeling start area 10 Aberration enhancing glass plate (aberration enhancing material)
Claims (4)
半導体の表面と集光手段との間にレーザ光線用の収差増強材を介在し、この状態でレーザ光線を照射して半導体の内部に集光点を形成し、半導体と集光点とを相対的に移動させ、半導体の内部に加工領域を半導体の表面に平行に形成することにより、半導体ウェーハの中間品を形成し、その後、加工領域を境に中間品を剥離開始領域から剥離して半導体ウェーハを得ることを特徴とする半導体ウェーハの製造方法。 A semiconductor wafer manufacturing method for manufacturing a semiconductor wafer by irradiating the surface of the semiconductor with a laser beam through a condensing means,
A laser beam aberration enhancing material is interposed between the surface of the semiconductor and the focusing means, and in this state, a laser beam is irradiated to form a focusing point inside the semiconductor, and the semiconductor and the focusing point are relative to each other. The semiconductor product is formed in parallel with the surface of the semiconductor to form an intermediate product of the semiconductor wafer, and then the intermediate product is separated from the separation start region with the processing region as a boundary. A method for producing a semiconductor wafer, comprising obtaining a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009036033A JP5601778B2 (en) | 2009-02-19 | 2009-02-19 | Manufacturing method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009036033A JP5601778B2 (en) | 2009-02-19 | 2009-02-19 | Manufacturing method of semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010188385A true JP2010188385A (en) | 2010-09-02 |
| JP5601778B2 JP5601778B2 (en) | 2014-10-08 |
Family
ID=42815015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009036033A Active JP5601778B2 (en) | 2009-02-19 | 2009-02-19 | Manufacturing method of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5601778B2 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013049161A (en) * | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | Method of cutting workpiece |
| JP2013171949A (en) * | 2012-02-20 | 2013-09-02 | Tokyo Ohka Kogyo Co Ltd | Method and device for separating support |
| JP2016068131A (en) * | 2014-09-30 | 2016-05-09 | ファナック株式会社 | Laser processing device capable of expanding convergence diameter |
| KR20160098054A (en) * | 2015-02-09 | 2016-08-18 | 가부시기가이샤 디스코 | Wafer producing method |
| JP2016201575A (en) * | 2016-08-30 | 2016-12-01 | 国立大学法人埼玉大学 | Manufacturing method for single crystal substrate |
| JP2016213502A (en) * | 2016-08-30 | 2016-12-15 | 国立大学法人埼玉大学 | Manufacturing method of single-crystal substrate |
| JP2017024039A (en) * | 2015-07-21 | 2017-02-02 | 株式会社ディスコ | Wafer thinning method |
| KR20170033995A (en) * | 2015-09-18 | 2017-03-28 | 영남대학교 산학협력단 | Thin film silicon substrate and method of fabricating the same |
| KR101811319B1 (en) * | 2015-09-24 | 2017-12-27 | 한양대학교 에리카산학협력단 | Fabrication method for ultrathin silicon using stealth laser scribing |
| KR101863195B1 (en) | 2017-02-20 | 2018-05-31 | 영남대학교 산학협력단 | Method and apparatus of fabricating for thin film silicon substrate |
| JP2019069870A (en) * | 2017-10-06 | 2019-05-09 | 国立大学法人埼玉大学 | Substrate manufacturing method |
| WO2019216506A1 (en) * | 2018-05-09 | 2019-11-14 | 한국기계연구원 | Ultrathin silicon substrate and manufacturing method therefor |
| CN113690182A (en) * | 2020-05-18 | 2021-11-23 | 株式会社迪思科 | Method of manufacturing substrate and system for manufacturing substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6266433A (en) * | 1985-09-19 | 1987-03-25 | Mitsubishi Electric Corp | Optical head device |
| JP2005277136A (en) * | 2004-03-25 | 2005-10-06 | Sharp Corp | Method and apparatus of manufacturing substrate |
| JP2007130675A (en) * | 2005-11-11 | 2007-05-31 | Seiko Epson Corp | Laser scribing method |
-
2009
- 2009-02-19 JP JP2009036033A patent/JP5601778B2/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6266433A (en) * | 1985-09-19 | 1987-03-25 | Mitsubishi Electric Corp | Optical head device |
| JP2005277136A (en) * | 2004-03-25 | 2005-10-06 | Sharp Corp | Method and apparatus of manufacturing substrate |
| JP2007130675A (en) * | 2005-11-11 | 2007-05-31 | Seiko Epson Corp | Laser scribing method |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013049161A (en) * | 2011-08-30 | 2013-03-14 | Hamamatsu Photonics Kk | Method of cutting workpiece |
| JP2013171949A (en) * | 2012-02-20 | 2013-09-02 | Tokyo Ohka Kogyo Co Ltd | Method and device for separating support |
| US10112377B2 (en) | 2012-02-20 | 2018-10-30 | Tokyo Ohka Kogyo Co., Ltd. | Supporting member separation method and supporting member separation apparatus |
| US9656349B2 (en) | 2014-09-30 | 2017-05-23 | Fanuc Corporation | Laser processing apparatus capable of increasing focused beam diameter |
| JP2016068131A (en) * | 2014-09-30 | 2016-05-09 | ファナック株式会社 | Laser processing device capable of expanding convergence diameter |
| KR20160098054A (en) * | 2015-02-09 | 2016-08-18 | 가부시기가이샤 디스코 | Wafer producing method |
| KR102361278B1 (en) | 2015-02-09 | 2022-02-10 | 가부시기가이샤 디스코 | Wafer producing method |
| JP2017024039A (en) * | 2015-07-21 | 2017-02-02 | 株式会社ディスコ | Wafer thinning method |
| KR20170033995A (en) * | 2015-09-18 | 2017-03-28 | 영남대학교 산학협력단 | Thin film silicon substrate and method of fabricating the same |
| KR102427002B1 (en) | 2015-09-18 | 2022-07-29 | 영남대학교 산학협력단 | Thin film silicon substrate and method of fabricating the same |
| KR101811319B1 (en) * | 2015-09-24 | 2017-12-27 | 한양대학교 에리카산학협력단 | Fabrication method for ultrathin silicon using stealth laser scribing |
| JP2016213502A (en) * | 2016-08-30 | 2016-12-15 | 国立大学法人埼玉大学 | Manufacturing method of single-crystal substrate |
| JP2016201575A (en) * | 2016-08-30 | 2016-12-01 | 国立大学法人埼玉大学 | Manufacturing method for single crystal substrate |
| KR101863195B1 (en) | 2017-02-20 | 2018-05-31 | 영남대학교 산학협력단 | Method and apparatus of fabricating for thin film silicon substrate |
| JP2019069870A (en) * | 2017-10-06 | 2019-05-09 | 国立大学法人埼玉大学 | Substrate manufacturing method |
| KR102043059B1 (en) * | 2018-05-09 | 2019-12-02 | 한국기계연구원 | An Ultrathin Silicon Substrate and a Method for manufacturing of the same |
| WO2019216506A1 (en) * | 2018-05-09 | 2019-11-14 | 한국기계연구원 | Ultrathin silicon substrate and manufacturing method therefor |
| CN113690182A (en) * | 2020-05-18 | 2021-11-23 | 株式会社迪思科 | Method of manufacturing substrate and system for manufacturing substrate |
| JP2021182622A (en) * | 2020-05-18 | 2021-11-25 | 株式会社ディスコ | Method of producing substrate and system for producing substrate |
| KR20210142559A (en) * | 2020-05-18 | 2021-11-25 | 가부시기가이샤 디스코 | Method of producing a substrate and system for producing a substrate |
| JP7156590B2 (en) | 2020-05-18 | 2022-10-19 | 株式会社ディスコ | Method for manufacturing substrate and system for manufacturing substrate |
| KR102590744B1 (en) * | 2020-05-18 | 2023-10-19 | 가부시기가이샤 디스코 | Method of producing a substrate and system for producing a substrate |
| CN113690182B (en) * | 2020-05-18 | 2024-06-14 | 株式会社迪思科 | Method of manufacturing a substrate and system for manufacturing a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5601778B2 (en) | 2014-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5601778B2 (en) | Manufacturing method of semiconductor wafer | |
| JP3762409B2 (en) | Substrate dividing method | |
| JP6004338B2 (en) | Single crystal substrate manufacturing method and internal modified layer forming single crystal member | |
| JP5015294B2 (en) | Semiconductor substrate and cutting method thereof | |
| JP5875122B2 (en) | Single crystal substrate manufacturing method and internal modified layer forming single crystal member | |
| JP5875121B2 (en) | Method for producing single crystal substrate and method for producing internal modified layer-forming single crystal member | |
| JP3624909B2 (en) | Laser processing method | |
| JP5312761B2 (en) | Cutting method | |
| JP5843393B2 (en) | Single crystal substrate manufacturing method, single crystal substrate, and internal modified layer forming single crystal member manufacturing method | |
| JP6004339B2 (en) | Internal stress layer forming single crystal member and single crystal substrate manufacturing method | |
| JP4703983B2 (en) | Cutting method | |
| JP6032789B2 (en) | Method for manufacturing single crystal processed member and method for manufacturing single crystal substrate | |
| JP2015119076A (en) | Internal processing layer formation single crystal member and manufacturing method therefor | |
| JP2011060862A (en) | Substrate slicing method | |
| JP2014019120A (en) | Method of manufacturing single crystal member for forming internal processing layer | |
| JP5561666B2 (en) | Substrate slicing method | |
| JP5177992B2 (en) | Processing object cutting method | |
| JP2005012203A (en) | Laser machining method | |
| JP2005294656A (en) | Substrate manufacturing method and apparatus thereof | |
| JP2005096459A (en) | Laser machining method | |
| JP6202695B2 (en) | Single crystal substrate manufacturing method | |
| JP6202696B2 (en) | Single crystal substrate manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120111 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130326 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20130326 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130411 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130507 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130522 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130924 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131111 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20131111 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140317 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140819 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140819 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5601778 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |