JP2010187034A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing impurities from being diffused in an active layer. <P>SOLUTION: A laser diode includes: an n-type GaN buffer layer 2 formed on an n-type GaN substrate 1; an n-type clad layer 3 formed thereupon; an n-type guide layer 4 formed thereupon; the active layer 5 formed thereupon; a p-type first guide layer 6 formed thereupon; an overflow prevention layer 7 formed thereupon; an impurity diffusion prevention layer 8 formed thereupon; a p-type GaN second guide layer 9 formed thereupon; and a p-type clad layer 10 formed thereupon. The impurity diffusion prevention layer 8 composed of In<SB>y</SB>Ga<SB>1-y</SB>N is provided in the vicinity of the active layer 5 so that p-type impurities present in the p-type clad layer 10, p-type second guide layer 9, etc., can be accumulated in the impurity diffusion prevention layer 8 and are not diffused in the active layer 5. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device containing gallium nitride (GaN).

  Gallium nitride (GaN) -based semiconductors are semiconductors having a wide band gap, and high-intensity ultraviolet to blue / green light-emitting diodes and blue-violet laser diodes have been researched and developed by taking advantage of the characteristics. In addition, high-frequency and high-power GaN-based transistors and the like have been produced.

Since the effective mass of electrons and holes is larger in the GaN system than in the GaAs system, the transparent carrier density is increased. Therefore, the threshold current density in the GaN-based laser is inevitably larger than that in the GaAs-based laser. A typical value of the threshold current density in the GaN laser is about 1 to 3 kAcm ⁻² .

  Thus, since the GaN-based laser has a large threshold current density, it is extremely important to suppress overflow of carriers (particularly electrons). In a GaN-based laser, a GaAlN layer doped with a p-type impurity is often provided in the vicinity of an active layer in order to suppress an overflow of electrons (see Non-Patent Document 1 and Non-Patent Document 2).

  However, in crystal growth of an actual device structure, the growth temperature differs between InGaN and GaN · GaAlN used as the material of the guide layer. InGaN has a growth temperature of around 700 to 800 ° C., whereas GaN · GaAlN has a growth temperature of 1000 to 1100 ° C. That is, after the growth of InGaN, the growth is temporarily interrupted and a temperature rising process is performed to grow GaN · GaAlN. It was found that defects due to thermal damage were introduced into the crystal growth layer during this temperature raising process. If the layer in which such a defect is introduced is in the vicinity of the active layer, the lifetime of the device may be reduced. Therefore, it is an important matter to realize a highly reliable element that the layer in which the defect is introduced is kept away from the active layer.

Further, when a GaAlN layer doped with a p-type impurity is provided in the very vicinity of the active layer, free carrier loss due to the p-type impurity occurs, and the threshold current density increases. Further, the p-type impurity may diffuse into the active layer. In this case, the loss increases and the threshold current density also increases. Even if the diffusion of p-type impurities into the active layer is suppressed at the initial stage of energization of the laser diode, the impurity diffusion into the active layer occurs during the lifetime test under constant light output, resulting in a threshold value. An increase in current density may be caused, and there is a possibility that the laser diode may eventually become unusable. Thus, the diffusion of p-type impurities into the active layer is a serious problem related to device reliability.
Nakamura Shuji et al., “InGaN-Based Multi-Quantum-Well-Structure Laser Diodes”, Japanese Journal of Applied Physics, January 15, 1996, Vol. L74-L76. M. Hansen et al., “Higher efficiency InGaN laser diodes with an improved quantum well capping configuration”, Applied Physics Letters, November 25, 2002, vol. 4275-4277.

  The present invention provides a semiconductor device capable of preventing diffusion of impurities into an active layer.

According to one aspect of the present invention, an active layer;
a first semiconductor layer comprising p-type GaN;
An In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer disposed between the active layer and the first semiconductor layer;
Between the active layer and the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, and the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) a second semiconductor layer containing p-type GaN disposed between the first semiconductor layer and the first semiconductor layer;
The In _1-x-y1 GaxAl _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, the first semiconductor layer, and the second layer are disposed between the first semiconductor layer and the active layer. The In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, the first semiconductor layer, and the second semiconductor layer having a smaller band gap than the semiconductor layer And a In _y2 Ga _1-y2 N (0 <y2 ≦ 1) layer having a larger lattice constant than the semiconductor device.

Moreover, according to one aspect of the present invention, an active layer;
a first semiconductor layer comprising p-type GaN;
An In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer disposed between the active layer and the first semiconductor layer;
A second semiconductor layer containing p-type GaN disposed between the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer and the first semiconductor layer; ,
A p-type In _x3 Ga _{1 -x3} N (0 ≦ 0) disposed between the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer and the active layer. a third semiconductor layer of x3 <1, x2>x3);
The In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer and the second semiconductor layer, and the In _1-x-y1 Ga _x Al _y1 N ( And an In _y2 Ga _1-y2 N (0 <y2 ≦ 1) layer disposed in at least one of the layer between the 0 ≦ x <1, 0 <y1 ≦ 1) layer and the third semiconductor layer. A semiconductor device is provided.

  According to the present invention, the provision of the impurity diffusion preventing layer prevents the first conductivity type impurity from diffusing into the active layer, thereby improving the device characteristics.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

(First embodiment)
FIG. 1 is a cross-sectional view of a semiconductor device according to the first embodiment of the present invention, showing a cross-sectional structure of a semiconductor light emitting element, more specifically, a laser diode. 1 includes an n-type GaN buffer layer 2 formed on an n-type GaN substrate 1, an n-type cladding layer 3 formed thereon, and an n-type guide layer 4 formed thereon. The active layer 5 formed thereon, the p-type first guide layer 6 formed thereon, and the Ga _x Al _1-x N (0 <x ≦ 1) layer (overflow) formed thereon Prevention layer) 7, In _y Ga _1-y N (0 <y ≦ 1) layer (impurity diffusion prevention layer) 8 formed thereon, and p-type GaN second guide layer 9 formed thereon. A p-type cladding layer 10 formed thereon, and a p-type contact layer 11 formed thereon. Incidentally, the overflow preventing layer can also be extended to more general _{In 1-x-y Ga x} Al y N (0 ≦ x <1,0 <y ≦ 1).

  The In composition ratio of the impurity diffusion preventing layer 8 is set higher than the In composition ratio of the overflow preventing layer 7 and the guide layers 6 and 9. As a guideline for impurity diffusion described later, the In composition ratio of the impurity diffusion prevention layer 8 is 2 to 10%, preferably 3 to 8%, and the In composition ratio of the overflow prevention layer 7 and the guide layers 6 and 9 is 2% or less. is there. Generally, the greater the In composition ratio, the greater the refractive index and the smaller the band gap. If the In composition of the impurity diffusion preventing layer 8 is small, it is difficult to obtain the effect of preventing impurity diffusion. Further, from the viewpoint of effective efficiency, it is desirable that the In composition ratio of the impurity diffusion preventing layer 8 is smaller than the In composition ratio of the quantum well layer of the active layer.

  The p-type cladding layer 10 has a convex portion, a p-type GaN contact layer 11 is formed on the uppermost surface of the convex portion, and insulation is provided on the side wall portion of the convex portion and the surface portion of the p-type cladding layer 10 other than the convex portion. Layer 12 is formed. A p-type electrode 13 is formed on the p-type GaN contact layer 11, and an n-type electrode 14 is formed on the back side of the n-type GaN substrate 1.

  In the laser diode of FIG. 1, an impurity diffusion prevention layer 8 is provided between the overflow prevention layer 7 and the p-type GaN second guide layer 9. The impurity diffusion preventing layer 8 functions to absorb p-type impurities existing inside the p-type GaN guide layer 9 and the p-type cladding layer 10, so that the p-type impurities are not diffused into the active layer. Even if the impurity diffusion preventing layer 8 is disposed close to the p-type cladding layer 10, the effect of preventing impurity diffusion can be sufficiently obtained. However, the impurity diffusion preventing layer 8 is more likely to be closer to the active layer 5 than the impurity diffusion preventing layer 8. The effect of preventing diffusion can be further improved. The reason is to prevent the diffusion of p-type impurities contained in as many p-type semiconductor layers as possible among one or a plurality of p-type semiconductor layers existing between the active layer 5 and the p-type cladding layer 10. This is because it can. However, when the impurity diffusion preventing layer 8 is provided in contact with the active layer 5, the quantum well layer of the active layer 5 has a smaller band gap than the impurity diffusion preventing layer 8. Since the impurities are not sufficiently absorbed, p-type impurities may diffuse into the active layer 5, which is not preferable.

  The inventor investigated the doping profile of a p-type impurity (for example, Mg) by using secondary ion mass spectrometry (SIMS) for a laminated film made of GaN, GaAlN, and InGaN. As a result, it was found that the Mg concentration in InGaN was the highest even when the matrix effect of SIMS was taken into consideration even though the doping concentration was designed to be constant. FIG. 2 is a diagram showing the results. In the characteristic diagram a of FIG. 2, the horizontal axis represents the depth position of the laminated film, and the vertical axis represents the Mg concentration. In the characteristic diagram b, the horizontal axis is the depth position of the laminated film, and the vertical axis is the band gap energy.

  As can be seen from the characteristic diagram a in FIG. 2, the Mg concentration of the impurity diffusion preventing layer 8 is the highest. Further, as can be seen from the characteristic diagram b, the band gap energy of the impurity diffusion preventing layer 8 is the smallest.

  The reason for the high Mg concentration of InGaN is that InGaN has a larger lattice constant than GaN and GaAlN (strictly, the lattice constant in the c-axis direction is large), and Mg is easily taken into the film.

As can be seen from FIG. 2, the Mg concentration and the band gap energy of each layer in the laminated film have a correlation with each other. Therefore, in the laser diode of FIG. 1 as well, the material of the impurity diffusion prevention layer 8 made of In _y Ga _1-y N is used in a band more than the overflow prevention layer 7 and the p-type GaN second guide layer 9 disposed on both sides thereof. If a material having a small gap energy is used, p-type impurities contained in the p-type GaN second guide layer 9 and the p-type cladding layer 10 can be accumulated in the impurity diffusion prevention layer 8. In other words, by making the lattice constant in the c-axis direction of the impurity diffusion prevention layer 8 larger than the lattice constant in the c-axis direction of the overflow prevention layer 7 and the p-type GaN second guide layer 9 disposed on both surfaces thereof, P-type impurities can be accumulated inside the impurity diffusion preventing layer 8.

Therefore, in this embodiment, an impurity diffusion prevention layer 8 composed of an In _y Ga _1-y N layer having a smaller band gap is disposed on the overflow prevention layer 7 doped with p-type impurities, A p-type impurity is accumulated therein so that the p-type impurity is not diffused into the active layer.

  3 and 4 are process diagrams showing the manufacturing process of the laser diode of FIG. First, an n-type GaN buffer layer 2 doped with an n-type impurity is crystal-grown on the n-type GaN substrate 1 (FIG. 3A). For the crystal growth, for example, metal organic chemical vapor deposition (MOCVD) is used. In addition, the crystal may be grown by molecular beam epitaxy (MBE). For the n-type impurity, Si, Ge, or the like can be used, but Si is used here.

Next, on the n-type GaN buffer layer 2, a superlattice n-type cladding layer 3 comprising an undoped Ga _0.9 Al _0.1 N layer and a GaN layer doped with n-type impurities of about 1 × 10 ¹⁸ cm ⁻³ is formed. Grow (FIG. 3B). The material of the n-type cladding layer 3 is not particularly limited, and for example, a thick film of Ga _0.95 Al _0.05 N may be used. Alternatively, the n-type cladding layer 3 may be formed by doping an n-type impurity in both the Ga _0.9 Al _0.1 N layer and the GaN layer.

Next, an n-type guide layer 4 made of GaN having a thickness of about 0.1 μm doped with n-type impurities of about 1 × 10 ¹⁸ cm ⁻³ is grown on the n-type cladding layer 3. Alternatively, In _0.01 Ga _0.99 N having a thickness of about 0.1 μm may be used as the n-type guide layer 4. The growth temperatures for growing the n-type GaN buffer layer 2, the n-type cladding layer 3, and the n-type guide layer 4 are all 1000 to 1100 ° C.

Next, on the n-type guide layer 4, a quantum well layer composed of an undoped In _0.1 Ga _0.9 N layer having a thickness of about 3.5 nm, and an undoped layer having a thickness of about 7 nm on both sides of the quantum well are sandwiched. An active layer 5 having a multiple quantum well (MQW) structure in which barrier layers made of In _0.01 Ga _0.99 N layers are alternately stacked is formed (FIG. 3C). The growth temperature in this case is 700 to 800 ° C.

Next, a p-type first guide layer 6 made of In _0.005 Ga _0.995 N is grown on the active layer 5. The film thickness may be about 90 nm. The p-type first guide layer 6 may be undoped or doped with Mg, which is a p-type impurity, from about 1 × 10 ¹⁷ cm ^{−3 to} about 5 × 10 ¹⁸ cm ⁻³ . The n-type guide layer 5 disposed under the active layer is GaN or In _x1 Ga _1-x1 N (0 <x1 <1), and the active layer is In _x2 Ga _1-x2 N (0 <x2 ≦ 1) ) And a barrier layer containing In _x3 Ga _1-x 3N (0 ≦ x3 <1, x2> x3), the p-type first guide layer 6 in the case of a single or multiple quantum well structure Is In _x4 Ga _{1 -x4} N (0 ≦ x4 <1, x3> x4).

Next, a Ga _0.8 Al _0.2 N layer having a thickness of about 10 nm doped with Mg of about 4 × 10 ¹⁸ cm ^{−3 to} about 5 × 10 ¹⁹ cm ⁻³ is grown on the p-type first guide layer 6. Let This Ga _0.8 Al _0.2 N layer is also referred to as an overflow prevention layer 7 because it is provided to prevent the overflow of electrons. The growth temperature for growing the p-type first guide layer 6 and the overflow prevention layer 7 is 1000 to 1100 ° C.

Next, an impurity diffusion prevention layer 8 made of In _y Ga _1-y N (0 <y ≦ 1) is grown on the overflow prevention layer 7 (FIG. 3D). The In composition y is, for example, y = 0.02, and the film thickness is, for example, 3 nm. This film thickness is, for example, 1 to 15 nm, preferably 1 to 10 nm.
If the film thickness is thin, it is difficult to obtain the effect of preventing impurity diffusion, and if the film thickness is thick, the light intensity distribution is not preferable. The growth temperature for growing the impurity diffusion prevention layer 8 is preferably 700 to 800 ° C., but may be 1000 to 1100 ° C. when the In composition is low (for example, 3% or less). The impurity diffusion preventing layer 8 may be doped with Mg of about 1 × 10 ¹⁷ cm ^{−3 to} about 1 × 10 ¹⁹ cm ⁻³ .

Next, a p-type GaN second guide layer 9 doped with Mg of about 2 × 10 ¹⁸ cm ^{−3 to} about 5 × 10 ¹⁹ cm ⁻³ is grown on the In _y Ga _1-y N layer. The thickness of this layer is, for example, 0.05 μm. Next, on the p-type GaN second guide layer 9, an undoped Ga _0.9 Al _0.1 N layer and Mg doped with about 1 × 10 ¹⁹ cm ⁻³ or more and about 5 × 10 ¹⁹ cm ⁻³ or less are formed. A p-type cladding layer 10 having a superlattice structure is grown. The material of the p-type cladding layer 10 is not particularly limited, and may be, for example, a thick film (film thickness of about 0.6 μm) doped with p-type impurities made of Ga _0.95 Al _0.05 N. Alternatively, it may be doped with p-type impurity to both Ga _0.9 Al _0.1 N and GaN. Next, a p-type GaN contact layer 11 made of a GaN layer having a thickness of 0.1 μm doped with p-type impurities is formed on the p-type cladding layer 10 (FIG. 4A). Instead of the GaN layer, an InGaAlN layer doped with a p-type impurity may be used. The growth temperature for growing the p-type GaN second guide layer 9, the p-type cladding layer 10 and the p-type contact layer 11 is 1000 to 1100 ° C.

  By performing a device process on the wafer on which crystal growth has been performed according to the steps up to FIGS. 3 and 4A, a laser diode is finally manufactured. A part of the p-type contact layer 11 and the p-type cladding layer 10 is removed by lithography and dry etching to produce a ridge structure having a convex portion (FIG. 4B). Further, an insulating layer 12 is formed on the side wall portion of the convex portion and the surface portion of the p-type cladding layer 10 other than the convex portion (FIG. 4C).

Next, a p-type electrode 13 is formed on the p-type GaN contact layer 11 and the insulating layer 12 doped with about 3 × 10 ¹⁹ cm ⁻³ or more and about 1 × 10 ²² cm ⁻³ or less of Mg, and n− An n-type electrode 14 is formed on the back side of the GaN substrate.

  The end surface of the laser diode is formed by cleaving, and the surface opposite to the light extraction surface is coated with a high reflectance.

  The convex laminated structure composed of the p-type cladding layer 10 and the p-type GaN contact layer 11 extends in a direction perpendicular to the paper surface and becomes a resonator.

  The convex laminated structure is not limited to a rectangle having a vertical side wall as shown in FIG. 1, but may be a trapezoidal convex having a mesa-shaped slope. The width (ridge width) of the p-type contact layer 11 is about 2 μm, and the resonator length may be 600 μm, for example.

  A current blocking layer made of an insulating layer 12 is formed on the side wall portion of the convex portion and the surface portion of the p-type cladding layer 10 other than the convex portion so as to sandwich the convex portion. The current blocking layer controls the transverse mode of the laser diode. The thickness of the current blocking layer can be arbitrarily selected according to the design, but may be set to a value of about 0.3 μm to 0.8 μm, for example, about 0.5 μm.

Examples of the material for the current blocking layer include a high resistivity semiconductor film such as an AlN film, a Ga _0.8 Al _0.2 N film, a semiconductor film irradiated with protons, a silicon oxide film (SiO ₂ film), a SiO ₂ film, and a ZrO ₂ film. A multilayer film or the like is used. That is, as the material of the current blocking layer, various materials can be adopted as long as the refractive index is lower than that of the nitride III-V compound semiconductor used for the active layer 5.

  Further, the laser diode according to the present embodiment may not have a ridge waveguide type laser structure. For example, in the case of a buried laser structure, an n-type such as n-type GaN or n-type GaAlN is used instead of an insulating film. A semiconductor layer may be used to function as a current blocking layer by pn junction isolation.

  On the p-type GaN contact layer 11, a p-type electrode 13 made of a composite film of palladium-platinum-gold (Pd / Pt / Au), for example, is formed. For example, the Pd film has a thickness of 0.05 μm, the Pt film has a thickness of 0.05 μm, and the Au film has a thickness of 1.0 μm.

  On the other hand, an n-type electrode 14 made of, for example, a composite film of titanium-platinum-gold (Ti / Pt / Au) is formed on the back side of the n-type GaN substrate 1. As a material of the n-type electrode 14, for example, a Ti film having a thickness of 0.05 μm, a Pt film having a thickness of 0.05 μm, and an Au film having a thickness of 1.0 μm are used.

  The laser diode manufactured by the manufacturing method of FIGS. 3 and 4 has an average threshold current of 35 mA in the current-light output characteristics. In the case of a laser diode in which the impurity diffusion prevention layer 8 is not provided on the overflow prevention layer 7, the threshold current is about 35 mA on average. This shows that there is no difference in the initial characteristics of the laser diode depending on the presence or absence of the impurity diffusion preventing layer 8.

  Next, the present inventor conducted an energization test for measuring the lifetime in a state where the light output was constant. In this energization test, a laser diode was continuously oscillated at an optical output of 50 mW and an operating temperature of 75 ° C., and the rate of increase in operating current was examined. The time when the operating current has increased by 20% of the initial value is defined as the lifetime of the laser diode. When the lifetime of the laser diode of FIG. 1 was measured according to this definition, it was 1000 hours or more as estimated from the change in the rate of increase. On the other hand, the lifetime of the laser diode without the impurity diffusion preventing layer 8 was 200 to 300 hours.

  The reason why such a difference in life has occurred will be described. When the impurity diffusion preventing layer 8 is not provided, during the energization test, p-type impurities (for example, Mg) in the p-type cladding layer 10 and the p-type second guide layer 9 gradually move toward the active layer 5 with less impurities. Start spreading. When p-type impurities are diffused in the active layer 5, free carrier loss occurs, so that the threshold current in the laser diode increases. In addition, the slope efficiency indicating the ratio of the light output change amount to the current change amount above the threshold current is lowered. Therefore, the operating current increases when trying to keep the light output constant.

  On the other hand, when the impurity diffusion prevention layer 8 is provided as in the present embodiment, p-type impurities are accumulated in the impurity diffusion prevention layer 8 and diffusion of the p-type impurities into the active layer 5 can be suppressed. For this reason, the lifetime can be extended and a highly reliable laser diode can be provided.

  In the laser diode of FIG. 1, an impurity diffusion prevention layer 8 is provided between the overflow prevention layer 7 and the p-type GaN second guide layer 9, but as shown in FIG. An impurity diffusion preventing layer 8 may be provided between the guide layers 6. In the case of FIG. 5, the p-type impurity in the overflow prevention layer 7 can also be reliably accumulated in the impurity diffusion prevention layer 8.

Thus, in this embodiment, the impurity diffusion prevention layer 8 made of In _y Ga _1-y N is provided in the vicinity of the active layer 5, so that the inside of the p-type cladding layer 10, the p-type second guide layer 9, etc. P-type impurities can be accumulated in the impurity diffusion preventing layer 8, and the p-type impurities do not diffuse into the active layer 5.
For this reason, the life of the laser diode can be extended and the reliability can be improved.

(Second Embodiment)
The second embodiment is different from the first embodiment in the structure of the laser diode.

FIG. 6 is a cross-sectional view of a laser diode according to the second embodiment. The laser diode of FIG. 6 has a p-type GaN guide layer 21 in which the p-type first guide layer 6 and the p-type GaN second guide layer 9 of FIG. This guide layer is disposed between the active layer 5 and the overflow prevention layer 7. 6 includes an n-type GaN buffer layer 2 formed on an n-type GaN substrate 1, an n-type cladding layer 3 formed thereon, and an n-type guide layer formed thereon. 4, an active layer 5 formed thereon, a p-type GaN guide layer 21 formed thereon, a Ga _0.8 Al _0.2 N layer (overflow prevention layer 7) formed thereon, and And an In _y Ga _1-y N (0 <y ≦ 1) layer (impurity diffusion prevention layer 8) formed thereon, and a p-type cladding layer 10 formed thereon.

  In the laser diode of FIG. 6, the p-type impurities in the p-type cladding layer 10 can be accumulated in the impurity diffusion preventing layer 8, so that the p-type impurities can be prevented from diffusing into the active layer 5.

  In FIG. 6, the impurity diffusion prevention layer 8 is disposed between the overflow prevention layer 7 and the p-type cladding layer 10. However, as shown in FIG. 7, the impurity diffusion prevention layer 8 and the p-type GaN guide layer 21 are prevented from overflowing. It may be arranged between the layers 7.

  In the laser diode of FIG. 7, not only the p-type cladding layer 10 but also the p-type impurities in the overflow prevention layer 7 can be accumulated in the impurity diffusion prevention layer 8.

  In the laser diode of FIGS. 6 and 7, the stacking order of the p-type GaN guide layer 21 and the overflow prevention layer 7 may be switched. In this case, a laser diode as shown in FIG. 8 or FIG. 9 is obtained. In the laser diode of FIG. 8, the impurity diffusion prevention layer 8 is disposed between the p-type cladding layer 10 and the p-type GaN guide layer 21, and in the diode of FIG. 9, the p-type GaN guide layer 21 and the overflow prevention layer 7 are provided. An impurity diffusion preventing layer 8 is disposed between the two layers.

  As described above, in any of the structures shown in FIGS. 6 to 9, since the p-type impurity can be accumulated in the impurity diffusion preventing layer 8, the diffusion of the p-type impurity into the active layer can be prevented and the life of the laser diode is extended. be able to.

  In the first and second embodiments described above, Mg is used as the p-type impurity, but Zn or the like may be used.

  In the first and second embodiments, the example in which the impurity diffusion preventing layer 8 is provided in the laser diode has been described. However, the present invention is not limited to the laser diode, but also an optical device such as a light emitting diode or a photodetector, a transistor It can also be applied to electronic devices such as (for example, HBT (Heterojunction Bipolar Transistor)).

  In each of the above embodiments, an example in which p-type impurities are accumulated in the impurity diffusion prevention layer 8 has been described. However, an overflow prevention layer and an n-type guide layer for preventing overflow of holes doped with n-type impurities are provided. In such a case, n-type impurities may be accumulated inside the impurity diffusion prevention layer formed adjacent to these layers.

1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention. The figure which shows the relationship between the depth of a laminated film, and Mg density | concentration, and the relationship between a depth and band gap energy. FIG. 2 is a process diagram showing a manufacturing process of the laser diode of FIG. 1. Process drawing following FIG. FIG. 6 is a cross-sectional view of a semiconductor device in which an impurity diffusion prevention layer 8 is provided between the overflow prevention layer 7 and the p-type first guide layer 6. Sectional drawing of the laser diode which concerns on 2nd Embodiment. 2 is a cross-sectional view of a laser diode in which an impurity diffusion prevention layer 8 is disposed between a p-type GaN guide layer 21 and an overflow prevention layer 7. FIG. 2 is a cross-sectional view of a laser diode in which an impurity diffusion prevention layer 8 is disposed between a p-type cladding layer 10 and a p-type GaN guide layer 21. FIG. 2 is a cross-sectional view of a laser diode in which an impurity diffusion prevention layer 8 is disposed between a p-type GaN guide layer 21 and an overflow prevention layer 7. FIG.

1 n-type GaN substrate 2 n-type GaN buffer layer 3 n-type cladding layer 4 n-type guide layer 5 active layer 6 p-type first guide layer 7 Ga _x Al _1-x N (0 <x ≦ 1) layer (overflow prevention) layer)
8 In _u Ga _1-uv Al _v N (0 <u ≦ 1, 0 <v ≦ 1) layer (impurity diffusion preventing layer)
9 p-type GaN second guide layer 10 p-type cladding layer 11 p-type contact layer 12 insulating layer 13 p-side electrode 14 n-side electrode 21 p-type GaN guide layer

Claims (13)

An active layer,
a first semiconductor layer comprising p-type GaN;
An In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer disposed between the active layer and the first semiconductor layer;
Between the active layer and the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, and the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) a second semiconductor layer containing p-type GaN disposed between the first semiconductor layer and the first semiconductor layer;
The In _1-x-y1 GaxAl _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, the first semiconductor layer, and the second layer are disposed between the first semiconductor layer and the active layer. The In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, the first semiconductor layer, and the second semiconductor layer having a smaller band gap than the semiconductor layer And an In _y2 Ga _{1 -y2} N (0 <y2 ≦ 1) layer having a larger lattice constant than the semiconductor device. The second semiconductor layer is disposed between the active layer and the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer,
Between the second semiconductor layer and the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, the In _y2 Ga _1-y2 N (0 <y2 ≦ 1). 2. The semiconductor device according to claim 1, wherein a layer is disposed. The In composition ratio in the In _y2 Ga _1-y2 N (0 <y2 ≦ 1) layer is the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, The semiconductor device according to claim 1, wherein the composition ratio of In is higher than that of In in the first semiconductor layer and the second semiconductor layer. The active layer emits light of a predetermined wavelength,
The first semiconductor layer is a p-type cladding layer;
The semiconductor device according to claim 1, wherein the second semiconductor layer is a p-type guide layer. 5. The n-type guide layer including GaN or In _x3 Ga _1-x3 N (0 <x3 <1), which is disposed on a side opposite to the p-type guide layer of the active layer. Semiconductor device. The active layer includes a quantum well including In _x1 Ga _1-x1 N (0 <x1 ≦ 1) and a barrier layer including In _x2 Ga _1-x2 N (0 ≦ x2 <1, x1> x2). 6. The semiconductor device according to claim 1, wherein the semiconductor device has a single or multiple quantum well structure. An active layer,
a first semiconductor layer comprising p-type GaN;
An In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer disposed between the active layer and the first semiconductor layer;
A second semiconductor layer containing p-type GaN disposed between the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer and the first semiconductor layer; ,
A p-type In _x3 Ga _{1 -x3} N (0 ≦ 0) disposed between the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer and the active layer. a third semiconductor layer of x3 <1, x2>x3);
The In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer and the second semiconductor layer, and the In _1-x-y1 Ga _x Al _y1 N ( And an In _y2 Ga _1-y2 N (0 <y2 ≦ 1) layer disposed in at least one of the layer between the 0 ≦ x <1, 0 <y1 ≦ 1) layer and the third semiconductor layer. A featured semiconductor device. Wherein said second semiconductor layer _{In 1-x-y1 Ga x} Al y1 N (0 ≦ x <1,0 <y1 ≦ 1) wherein between the layers _{In y2 Ga 1-y2 N (} 0 <y2 ≦ 1 8. The semiconductor device according to claim 7, wherein a layer is disposed. Wherein said third semiconductor layer _{In 1-x-y1 Ga x} Al y1 N (0 ≦ x <1,0 <y1 ≦ 1) wherein between the layers _{In y2 Ga 1-y2 N (} 0 <y2 ≦ 1 8. The semiconductor device according to claim 7, wherein a layer is disposed. The In composition ratio in the In _y2 Ga _1-y2 N (0 <y2 ≦ 1) layer is the In _1-x-y1 Ga _x Al _y1 N (0 ≦ x <1, 0 <y1 ≦ 1) layer, The semiconductor device according to claim 7, wherein the composition ratio is higher than the In composition ratio in the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.   The active layer emits light of a predetermined wavelength, the first semiconductor layer is a p-type cladding layer, and the second and third semiconductor layers are each a p-type guide layer. The semiconductor device according to any one of 7 to 10. 12. The semiconductor according to claim 11, further comprising an n-type guide layer of GaN or In _x4 Ga _1-x4 N (0 <x4 <1) disposed on a side opposite to the p-type guide layer of the active layer. apparatus. The active layer includes a quantum well containing In _x1 Ga _1-x1 N (0 <x1 ≦ 1) and a barrier layer containing In _x2 Ga _1-x2 N (0 ≦ x2 <1, x1> x2). 12. The semiconductor device according to claim 7, wherein the semiconductor device has a single or multiple quantum well structure.

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