JP2010186592A - Dynamic amount detection sensor and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dynamic amount detection sensor capable of detecting tilting which is a detection subject without breakage, even if a relatively large dynamic amount is applied; and to provide a method of manufacturing the same. <P>SOLUTION: The tilt sensor, which is a dynamic amount detection sensor, includes a conductive fixed contact pillar 11b installed on a substrate, a frame body 11a which is installed at the outside of the fixed contact pillar 11b on the substrate, and a conductive movable member 11c which is installed on the frame body 11a through a beam 11d and can rock between the frame body 11a and the fixed contact pillar 11b. The frame body 11a and the movable member 11c include a first layer on the substrate side and a second layer which is at the upper side of the first layer and the beam 11d is installed at the second layer, and the first layer has an extension part 11e extended partially at the lower part of the beam 11d. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a mechanical quantity detection sensor and a method for manufacturing the same, for example, the mechanical quantity is related to inclination.

  2. Description of the Related Art Conventionally, a mechanical quantity detection sensor that detects a mechanical quantity using a weight that is swingably supported by a anchor via a beam has been developed. An example of such a mechanical quantity detection sensor is an acceleration sensor disclosed in Patent Document 1. In addition, a sensor that detects inclination and vibration using a weight that is swingably supported by a anchor via a beam is also disclosed (Patent Document 1). As shown in FIG. 7, in this sensor, a vibrating part (movable electrode) 3 is swingably supported in an opening 1 a of a base material 1 via a spiral support arm 2. A sensing unit 4 (fixed electrode) is provided in the central opening 3a. When the sensor having such a configuration is tilted, the vibrating portion (movable electrode) 3 held by the spiral support arm 2 is displaced, and the vibrating portion 3 comes into contact with the sensing portion 4 to be in an energized state. Detect.

Design Registration No. 1340020

  In the configuration disclosed in Patent Document 1, the vibration unit 3 basically swings in a plane direction (left and right and up and down directions on the paper surface in FIG. 7). It can be considered that it also swings in the direction from the front side to the back side in FIG. In this case, since there is no member on the lower side of the support arm 2 (the back side in FIG. 7), there is a possibility that the support arm 2 may be damaged when it is largely swung in the vertical direction.

  The present invention has been made in view of such points, and a mechanical quantity detection sensor capable of detecting a mechanical quantity as a detection target without being damaged even when a relatively large mechanical quantity is applied, and a method for manufacturing the same. The purpose is to provide.

  The mechanical quantity detection sensor of the present invention comprises a frame on a base material, and a movable member provided to the frame via a beam and swingable with respect to the frame. The frame body and the movable member include a first layer on the substrate side and a second layer that is higher than the first layer, and the beam is provided in the second layer, and the first layer is It extends partially below the beam.

  The mechanical quantity detection sensor of the present invention includes a standing member standing on a base material, a frame body provided on the base material and outside the standing member, and a beam with respect to the frame body A movable member that is swingable between the frame and the standing member, and the frame and the movable member include the first layer on the base material side and the movable member. A second layer above the first layer, wherein the beam is provided on the second layer, and the first layer extends partially below the beam. Features.

  The mechanical quantity detection sensor of the present invention includes a plurality of standing members standing on a base material, a frame provided on the base material and outside the standing member, and the standing member. A movable member that has a concave portion to be received on the outer peripheral surface and is swingable in a state where the standing member is positioned in the concave portion, and the frame body and the movable member are: A first layer on the substrate side and a second layer above the first layer, wherein the beam is provided in the second layer, and the first layer is partially below the beam It is characterized by extending.

  According to these configurations, since the first layer extends below the beam, even if a relatively large mechanical quantity is applied and the rocker also swings in the vertical direction, the extended portion remains in the vertical direction of the beam. It acts as a stopper for movement in the direction and prevents the beam from swinging greatly in the vertical direction. Thereby, damage of a beam can be prevented.

  In the mechanical quantity detection sensor of the present invention, the frame and the movable member are sandwiched between the base layer as the first layer, the active layer as the second layer, and the base layer and the active layer. Preferably, the insulating layer includes an SOI substrate having an insulating layer.

  According to another aspect of the present invention, there is provided a method for manufacturing a mechanical quantity detection sensor, comprising: a first silicon layer; a second silicon layer; and an insulating layer sandwiched between the first silicon layer and the second silicon layer. Etching a silicon layer to provide a standing member region, a movable member region, and a frame region; bonding a silicon substrate to the standing member region and the frame region of the SOI substrate; and Etching the silicon layer to provide a standing member region, a movable member region, a beam region, and a frame region; and etching the insulating layer to form the frame, the standing member, the frame, and the standing member; Forming a movable member that is swingable via a beam, and bonding a substrate made of a glass-silicon composite material to the frame and the standing member, The first silicon layer is formed of the beam Characterized in that it is etched to partially extend downward.

  According to another aspect of the present invention, there is provided a method for manufacturing a mechanical quantity detection sensor, comprising: a first silicon layer; a second silicon layer; and an insulating layer sandwiched between the first silicon layer and the second silicon layer. Etching the two silicon layers to provide a standing member region, a movable member region, a beam region, and a frame region on the second silicon layer side; and a glass-silicon composite material in the frame region and the standing member region Bonding the substrate constituted by the step, etching the first silicon layer of the SOI substrate to provide a standing member region, a movable member region, and a frame region on the first silicon layer side, and the insulation Etching the layer to form a frame, a standing member, and a movable member swingable between the frame and the standing member via a beam; and the standing of the first silicon layer The mounting member and the frame Comprising the step of bonding the down substrate, wherein the first silicon layer is characterized by being etched to partially extend below the beams.

  According to these methods, the beam is fixed to the first silicon layer by the insulating layer until the insulating layer is etched. Thereby, it is possible to prevent the beam from moving and being damaged during the processing of the SOI substrate.

  The mechanical quantity detection sensor of the present invention comprises a frame on a base material, and a movable member provided to the frame via a beam and swingable with respect to the frame. The frame body and the movable member include a first layer on the substrate side and a second layer that is higher than the first layer, and the beam is provided in the second layer, and the first layer is Partially extending below the beam, or a standing member standing on the base material, and a frame provided on the base material and outside the standing member; A movable member provided on the frame body via a beam and swingable between the frame body and the standing member, and the frame body and the movable member include the base material A first layer on the side and a second layer above the first layer, wherein the beam is provided in the second layer, and the first layer partially extends below the beam. Have Alternatively, a plurality of standing members standing on the base material, a frame provided on the base material and outside the standing member, and a recess for receiving the standing member on the outer peripheral surface A movable member that is swingable in a state where the standing member is positioned in the recess, and the frame body and the movable member are provided on the base material side. 1 layer and a second layer above the first layer, the beam is provided in the second layer, and the first layer partially extends below the beam. Even if a relatively large mechanical quantity is added, the mechanical quantity that is the detection target can be detected without being damaged.

(A) is a top view which shows the mechanical quantity detection sensor which concerns on embodiment of this invention, (b) is sectional drawing which follows the IB-IB line in (a). (A)-(e) is a figure for demonstrating an example of the manufacturing method of the mechanical quantity detection sensor which concerns on this invention. (A)-(c) is a figure for demonstrating an example of the manufacturing method of the mechanical quantity detection sensor which concerns on this invention. (A)-(d) is a figure for demonstrating the other example of the manufacturing method of the mechanical quantity detection sensor which concerns on this invention. (A), (b) is a figure for demonstrating the other example of the manufacturing method of the mechanical quantity detection sensor which concerns on this invention. (A) is a top view which shows the other example of the mechanical quantity detection sensor which concerns on embodiment of this invention, (b) is sectional drawing which follows the VIB-VIB line | wire in (a). It is a figure which shows the structure of the conventional mechanical quantity detection sensor.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present embodiment, a case where the mechanical quantity detection sensor is a tilt sensor will be described.
Fig.1 (a) is a top view which shows the inclination sensor which concerns on embodiment of this invention. FIG.1 (b) is sectional drawing which follows the IB-IB line | wire in Fig.1 (a). In FIG. 1A, the first substrate is illustrated through the third substrate in order to explain the configuration.

  The inclination sensor shown in FIG. 1 includes a frame 11a, a fixed contact column 11b as a contact member, a movable member 11c, and a beam 11d that supports the movable member 11c so as to be swingable with respect to the frame 11a. One substrate 11 is provided. Here, an SOI (Silicon On Insulator) substrate using conductive silicon is used as the first substrate 11. As shown to Fig.1 (a), the movable member 11c is supported by the frame 11a via the beam 11d. Thus, the presence of the beam 11d makes it possible to return the movable member 11c to the reference position (a position that does not contact any fixed contact column 11b) when there is no inclination. Here, the fixed contact column 11b, the movable member 11c, and the beam 11d are located inside the frame 11a, and the beam 11d is provided so as to surround the movable member 11c. Thus, by providing the beam 11d so as to be positioned outside the movable member 11c, it is possible to increase the length of the beam 11d and increase the amount of displacement of the movable member 11c due to swinging.

  As shown in FIG. 1B, the second substrate 12 is bonded to the frame region and the fixed contact column region on one main surface of the first substrate 11. Here, a silicon substrate is used as the second substrate 12. Thereby, the fixed contact pillar 11b is provided to stand on the base material with the second substrate 12 as the base material. In the second substrate 12, a recess 12 a is provided in a region inside the frame 11 a of the first substrate 11 other than the region where the fixed contact pillar 11 b is erected, and the movable member 11 c swings. In this case, the movable member 11c does not come into contact with the second substrate 12. In the present embodiment, the configuration in which the recess 12a is formed in the second substrate 12 is described. However, the present invention is not limited to this, and the thickness of the movable member 11c is reduced so that the movable member 11c is the second substrate. You may comprise so that it may not contact the board | substrate 12. FIG.

  As shown in FIG. 1B, the third substrate 13 is bonded to the frame region and the fixed contact column region on the other main surface of the first substrate 11. Here, a substrate made of a glass-silicon composite material is used as the third substrate 13. In the substrate composed of this glass-silicon composite material, first, a silicon substrate is etched to form a protruding portion in the fixed contact column region, and the protruding portion is brought into contact with the glass substrate and heated and pressed to make the protruding portion into glass. Pushing into the substrate, polishing both main surfaces of the glass substrate to expose the silicon member (portion corresponding to the protruding portion) on both main surfaces of the glass substrate, and forming a metal layer in the bonding region of the first substrate 11 Can be produced.

  A metal layer 13d is formed in the bonding region of the first substrate 11 in the third substrate, while the bonding region (frame region, fixed contact column region) of the third substrate 13 in the first substrate 11 is also A metal layer 11f is formed. Then, the metal layers 11f and 13d are brought into contact with each other and joined. In the third substrate 13, a recess 13 b is provided in a region inside the frame 11 a of the first substrate 11 other than the region where the fixed contact pillar 11 b is erected, and the movable member 11 c swings. In this case, the movable member 11c does not come into contact with the third substrate 13. In the present embodiment, the configuration in which the recess 13b is formed in the third substrate 13 is described. However, the present invention is not limited to this, and the thickness of the movable member 11c is reduced so that the movable member 11c is the third substrate. You may comprise so that it may not contact the board | substrate 13. FIG.

  A metal layer 11f is also formed on the movable member 11c. Thus, when the movable member 11c contacts the fixed contact column 11b, the metal layer 11f on the movable member 11c and the metal layer on the fixed contact column 11b come into contact with each other, and the movable member 11c and the fixed contact column 11b The reliability of conduction between the two can be improved.

  A conductive member (silicon member) 13 a is embedded in the third substrate 13 and is exposed on both main surfaces of the third substrate 13. On the main surface of the third substrate 13 on the first substrate 11 side, a metal layer 13c is formed so as to be electrically connected to the conductive member 13a. The metal layer 13c is electrically connected to the fixed contact column 11b. Further, a metal layer 13d is formed on the main surface of the third substrate 13 opposite to the main surface on the first substrate 11 side (main surface on the outside world side) so as to be electrically connected to the conductive member 13a. .

  In such a configuration, as shown in FIG. 1A, the frame 11a is positioned outside the fixed contact column 11b, and the frame 11a and the fixed contact column are connected to the frame 11a via the beam 11d. A movable member 11c is provided so as to be swingable between 11b (gap 14).

  The frame 11a and the movable member 11c include a first layer (base layer 21 to be described later) on the base material side and a second layer (an active layer 22 to be described later) higher than the first layer. 11d is provided, and the first layer has an extending portion 11e extending partially below the beam 11d. As shown in FIG. 1B, the extending portion 11e may extend from the frame 11a side or may extend from the movable member 11c side. Thus, the presence of the extending portion 11e below the beam 11d adds a relatively large amount of mechanical force, and even if it swings in the vertical direction (the direction of raising the paper in FIG. 1B), The extending portion 11e serves as a stopper for the vertical movement of the beam 11d, thereby preventing the beam 11d from greatly swinging in the vertical direction. Thereby, damage to the beam 11d can be prevented.

  When the tilt sensor having such a configuration is tilted, the movable member 11c swings and the tilt is detected when the movable member 11c contacts the fixed contact column 11b. This detection is performed by a control unit (not shown). That is, in this inclination sensor, the movable member 11c and the fixed contact column 11b are electrically conductive, and the fixed contact column 11b is electrically connected to the control unit via the metal layer. When the tilt sensor tilts in a certain direction, the movable member 11c swings and the movable member 11c contacts the fixed contact column 11b. At this time, the fixed contact column 11b that is in contact with the movable member 11c becomes conductive through the movable member 11c. In the control unit, the inclination is detected by detecting this conduction state. In addition, there is no restriction | limiting in particular about the detection method (detection circuit) of the conduction | electrical_connection state in a control part.

Next, an example of the manufacturing method of the inclination sensor according to the present invention will be described.
FIGS. 2A to 2E and FIGS. 3A to 3C are views for explaining an example of the manufacturing method of the tilt sensor according to the present invention.

  In this method, the first of an SOI substrate (first substrate 11) having a first silicon layer, a second silicon layer, and an insulating layer sandwiched between the first silicon layer and the second silicon layer. The silicon layer is etched to provide a fixed contact column region, a movable member region, and a frame region, a silicon substrate (second substrate 12) is joined to the fixed contact column region and the frame region of the SOI substrate, 2 etching the silicon layer to provide a fixed contact column region, a movable member region, a beam region, and a frame region; and etching the insulating layer to form a frame, a fixed contact column, and the frame and the fixed contact column; A movable member capable of swinging is formed through a beam, and a substrate (third substrate 13) made of a glass-silicon composite material is joined to the frame and the fixed contact column. In this case, the first silicon layer is etched so as to partially extend below the beam.

  First, a process for manufacturing the first substrate 11 will be described. First, an SOI (Silicon On Insulator) having a base layer 21 that is a first silicon layer, an active layer 22 that is a second silicon layer, and an insulating layer 23 sandwiched between the base layer 21 and the active layer 22. Prepare the board. Next, as shown in FIG. 2A, the base layer 21 of this SOI substrate is processed by photolithography and etching to provide a fixed contact column region 21b, a movable member region 21c, and a frame region 21a. At this time, deep RIE (reactive ion etching) or the like is used as the etching.

  Next, as shown in FIG. 2B, a silicon substrate is prepared as the second substrate 12, and the silicon substrate is processed to form the recess 12a in order to prevent the movable member 11c and the like from contacting each other. Next, as shown in FIG. 2C, the silicon substrate 12 is bonded to the first substrate 11 such that the recess 12a faces the base layer 21a. Next, as shown in FIG. 2D, the active layer 22 is processed by photolithography and etching in order to provide the active layer 22 with the fixed contact column region 22b, the movable member region 22c, the beam region 22d, and the frame region 22a. To do. At this time, deep RIE (reactive ion etching) or the like is used as the etching. Next, as shown in FIG. 2 (e), the insulating layer 23 can be etched to swing between the frame 11a, the fixed contact column 11b, and between the frame 11a and the fixed contact column 11b via the beam 11d. A movable member 11c is formed. In this method, the beam 11 d is fixed to the base layer 21 by the insulating layer 23 until the insulating layer 23 is etched. Accordingly, it is possible to prevent the beam 11d from moving and being damaged during the processing of the SOI substrate.

  Next, as shown in FIG. 3A, a metal layer 11f is formed in a region where the active layer 22 is joined to the third substrate 13 (the frame 11, the fixed contact column 11b) and the movable member 11c. Specifically, a metal material is deposited on the active layer 22 by sputtering and patterned by photolithography and etching. Next, as shown in FIG. 3B, a third substrate 13 made of a glass-silicon composite material is prepared. The third substrate 13 is formed, for example, by forming a protrusion serving as a conductive member by photolithography and dry etching on one main surface of a silicon substrate, placing a glass substrate on the protrusion of the silicon substrate, and pressing while heating. Then, both the substrates are bonded so as to embed the protruding portion in the glass substrate. Thereafter, both main surfaces of the obtained composite are polished to expose the conductive member on both main surfaces, and the composite is processed to prevent contact of the movable member 11c and the like on one main surface side. Thus, the recess 13b is formed, and the metal layers 13d and 13c are formed on both main surfaces of the composite. At this time, the metal layer 13c is provided on the conductive member 13a exposed on the outer main surface, and the metal layer 13d is bonded to the first substrate 11 on the conductive member 13a exposed on the main surface on the recess 13b side. Provide on the area. Specifically, the metal layers 13c and 13d are formed by depositing a metal material on one main surface of the composite by sputtering and patterning by photolithography and etching.

  Finally, as shown in FIG. 3C, the first substrate 11 and the third substrate 13 are bonded. In this case, the first substrate 11 and the third substrate 13 are bonded so that the metal layer 13 d faces the first substrate 11. At this time, it is preferable to join by anodic bonding or diffusion bonding. In this way, the tilt sensor shown in FIGS. 1A and 1B can be obtained.

  4 (a) to 4 (d) and FIGS. 5 (a) and 5 (b) are diagrams for explaining another example of the manufacturing method of the tilt sensor according to the present invention.

  In this method, the second of the SOI substrate (first substrate 11) having a first silicon layer, a second silicon layer, and an insulating layer sandwiched between the first silicon layer and the second silicon layer. The silicon layer is etched to provide a fixed contact column region, a movable member region, a beam region and a frame region on the second silicon layer side, and the frame region and the fixed contact column region are made of a glass-silicon composite material. And bonding the substrate (third substrate 13), etching the first silicon layer of the SOI substrate to provide a fixed contact column region, a movable member region, and a frame region on the first silicon layer side, and the insulating layer To form a frame, a fixed contact column, and a movable member that can swing through a beam between the frame and the fixed contact column, and the fixed contact column of the first silicon layer and Silicon base on the frame Joining (second substrate 12). In this case, the first silicon layer is etched so as to partially extend below the beam.

  First, a process for manufacturing the first substrate 11 will be described. First, an SOI substrate having a base layer 21 as a first silicon layer, an active layer 22 as a second silicon layer, and an insulating layer 23 sandwiched between the base layer 21 and the active layer 22 is prepared. Next, as shown in FIG. 4A, the active layer 22 of the SOI substrate is processed by photolithography and etching to provide a fixed contact column region 22b, a movable member region 22c, a beam region 22d, and a frame region 22a. At this time, deep RIE (reactive ion etching) or the like is used as the etching. Next, as shown in FIG. 4A, a metal layer 11f is formed in a region where the active layer 22 is joined to the third substrate 13 (frame region 22a, fixed contact column region 22b) and the movable member 11c. Specifically, a metal material is deposited on the active layer 22 by sputtering and patterned by photolithography and etching.

  Next, as shown in FIG. 4A, a third substrate 13 made of a glass-silicon composite material is prepared. The third substrate 13 is formed, for example, by forming a protrusion serving as a conductive member by photolithography and dry etching on one main surface of a silicon substrate, placing a glass substrate on the protrusion of the silicon substrate, and pressing while heating. Then, both the substrates are bonded so as to embed the protruding portion in the glass substrate. Thereafter, both main surfaces of the obtained composite are polished to expose the conductive member on both main surfaces, and the composite is processed to prevent contact of the movable member 11c and the like on one main surface side. Thus, the recess 13b is formed, and the metal layers 13d and 13c are formed on both main surfaces of the composite. At this time, the metal layer 13c is provided on the conductive member 13a exposed on the outer main surface, and the metal layer 13d is bonded to the first substrate 11 on the conductive member 13a exposed on the main surface on the recess 13b side. Provide on the area. Specifically, the metal layers 13c and 13d are formed by depositing a metal material on one main surface of the composite by sputtering and patterning by photolithography and etching.

  Next, as shown in FIG. 4B, the first substrate 11 and the third substrate 13 are bonded. In this case, the first substrate 11 and the third substrate 13 are bonded so that the metal layer 13 d faces the first substrate 11. At this time, it is preferable to join by anodic bonding or diffusion bonding.

  Next, as shown in FIG. 4C, the base layer 21 is processed by photolithography and etching in order to provide the base layer 21 with the fixed contact column region 21b, the movable member region 21c, and the frame region 21a. At this time, deep RIE (reactive ion etching) or the like is used as the etching. Next, as shown in FIG. 4D, the insulating layer 23 can be etched to swing between the frame 11a, the fixed contact column 11b, and the frame 11a and the fixed contact column 11b via the beam 11d. A movable member 11c is formed. In this method, the beam 11 d is fixed to the base layer 21 by the insulating layer 23 until the insulating layer 23 is etched. Accordingly, it is possible to prevent the beam 11d from moving and being damaged during the processing of the SOI substrate.

  Next, as shown in FIG. 5A, a silicon substrate is prepared as the second substrate 12, and the silicon substrate is processed to form a recess 12a in order to prevent the movable member 11c and the like from contacting each other. Next, as shown in FIG. 5B, the silicon substrate 12 is bonded to the first substrate 11 with the recess 12a facing the base layer 21a. In this way, the tilt sensor shown in FIGS. 1A and 1B can be obtained.

  FIG. 6A is a plan view showing another example of the inclination sensor according to the embodiment of the present invention, and FIG. 6B is a cross-sectional view taken along the line VIB-VIB in FIG. is there. The present invention is an inclination sensor having the configuration shown in FIG. 6, that is, a plurality of conductive fixed contact columns standing on a substrate, and provided on the substrate and outside the fixed contact columns. And a conductive movable member that has a recess for receiving the fixed contact column on the outer peripheral surface, and is swingable in a state where the fixed contact column is positioned in the recess. It can apply also to the structure which comprises.

  In the tilt sensor shown in FIG. 6A, the movable member 11c has a concave portion 11g for receiving the fixed contact column 11b on its outer peripheral surface. The fixed contact pillar 11b is positioned in the recess 11g. That is, the movable member 11c extends between the fixed contact columns 11b. The movable member 11c can swing in this state. Therefore, in such an arrangement, when the tilt sensor tilts and the movable member 11c swings, the movable member 11c is fitted with the two fixed contact columns so that the fixed contact column 11b fits into the recess 11g of the movable member 11c. Received at 11b. For this reason, the fixed contact pillar 11b can be reliably received by the recessed part 11g of the movable member 11c, and the movable member 11c can be reliably held by the fixed contact pillar 11b. Thus, since the movable member 11c is securely held by the fixed contact column 11b and the inclination is detected when the movable member 11c contacts the two fixed contact columns 11b, the movement in the sensor that is not the detection target. In (chattering), it is possible to stably detect the inclination to be detected without detecting the inclination.

  Also in this case, the first layer has an extending portion 11e that partially extends below the beam 11d. The extending portion 11e may extend from the frame 11a side or may extend from the movable member 11c side. Thus, the presence of the extending portion 11e below the beam 11d adds a relatively large amount of mechanical force, and even if it swings in the vertical direction (the direction of raising the paper surface in FIG. 6B), The extending portion 11e serves as a stopper for the vertical movement of the beam 11d, thereby preventing the beam 11d from greatly swinging in the vertical direction. Thereby, damage to the beam 11d can be prevented.

  In the present embodiment, the case where the outer periphery of the recess 11g is an arc in a plan view and the outer periphery of the fixed contact column 11b is a circle in a plan view is described. The planar view shape of the outer periphery of the fixed contact pillar 11b is not limited to this. Further, FIG. 6A illustrates a case where the fixed contact pillars 11b are arranged in a square shape at equal intervals. In this case, it is possible to detect the tilt direction every 90 degrees. The present invention is not limited to this, and by changing the arrangement interval, arrangement shape, and number of arrangement of the fixed contact pillars 11b, various inclination directions can be detected accordingly.

  The present invention is not limited to the above embodiment, and can be implemented with various modifications. Although the case where the mechanical quantity detection sensor is an inclination sensor has been described in the above embodiment, the present invention is not limited to this, and the present invention is also applied to the case where the mechanical quantity detection sensor is an acceleration sensor or a vibration sensor. be able to. Moreover, although the case where a glass substrate and a silicon substrate are used is described in the above embodiment, a substrate other than a glass substrate or a silicon substrate may be used in the present invention. In addition, the electrodes and the material of each layer in the sensor can be set as appropriate without departing from the effects of the present invention. Further, the process described in the above embodiment is not limited to this, and the process may be performed by changing the order as appropriate. Other modifications may be made as appropriate without departing from the scope of the object of the present invention.

  The present invention is useful for an inclination sensor that can be mounted on a small device such as a portable terminal.

DESCRIPTION OF SYMBOLS 11 1st board | substrate 11a Frame 11b Fixed contact pillar 11c Movable member 11d Beam 11e Extension part 11f, 13c, 13d Metal layer 11g, 12a, 13b Recessed part 12 2nd board | substrate 13 3rd board | substrate 13a Conductive member 14 Cavity 21 Base layer 22 Active layer 23 Insulating layer

Claims (6)

  A frame on a substrate, and a movable member provided to the frame via a beam and swingable with respect to the frame, wherein the frame and the movable member are A first layer on the substrate side and a second layer above the first layer, wherein the beam is provided in the second layer, and the first layer extends partially below the beam. A mechanical quantity detection sensor characterized by being present.   A standing member that is erected on a base material; a frame body that is provided on the base material and outside the erected member; and the frame body that is provided via a beam with respect to the frame body. And a movable member that can swing between the standing member and the frame and the movable member are a first layer on the base material side and a second layer that is higher than the first layer. A mechanical quantity detection sensor, wherein the beam is provided in the second layer, and the first layer extends partially below the beam.   A plurality of standing members erected on the substrate, a frame body provided on the substrate and outside the erection member, and a recess for receiving the erection member on the outer peripheral surface. A movable member that is swingable in a state in which the standing member is positioned in the recess, and the frame body and the movable member include a first layer on the substrate side, A second layer above the first layer, wherein the beam is provided in the second layer, and the first layer extends partially below the beam. A mechanical quantity detection sensor.   The frame body and the movable member are configured by an SOI substrate having a base layer as the first layer, an active layer as the second layer, and an insulating layer sandwiched between the base layer and the active layer. The mechanical quantity detection sensor according to claim 1, wherein the mechanical quantity detection sensor is provided.   A standing member region by etching the first silicon layer of the SOI substrate having a first silicon layer, a second silicon layer, and an insulating layer sandwiched between the first silicon layer and the second silicon layer; A step of providing a movable member region and a frame region; a step of bonding a silicon substrate to the standing member region and the frame region of the SOI substrate; and etching the second silicon layer to move the standing member region A step of providing a member region, a beam region, and a frame body region, and etching the insulating layer so that the frame body, the standing member, and the frame body and the standing member can be rocked via the beam. A step of forming a movable member, and a step of bonding a substrate made of a glass-silicon composite material to the frame body and the standing member, wherein the first silicon layer is a portion below the beam. Etching to extend Method of manufacturing a physical quantity detecting sensor, characterized in that it is.   Etching the second silicon layer of an SOI substrate having a first silicon layer, a second silicon layer, and an insulating layer sandwiched between the first silicon layer and the second silicon layer to etch the second silicon layer A step of providing a side standing member region, a movable member region, a beam region and a frame region, a step of bonding a substrate made of a glass-silicon composite material to the frame region and the standing member region, Etching the first silicon layer of the SOI substrate to provide a standing member region, a movable member region, and a frame region on the first silicon layer side; etching the insulating layer to etch the frame and standing member And a step of forming a movable member swingable between the frame body and the standing member via a beam, and a silicon substrate is bonded to the standing member and the frame body of the first silicon layer. And comprising a process The first silicon layer, a manufacturing method of a physical quantity detecting sensor, characterized in that it is etched to partially extend below the beams.

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