JP2010185869A - Semiconductor element inspecting substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element inspecting substrate, in which breakage such as a crack is hardly caused in the periphery of a metallized layer with a stud joined thereto. <P>SOLUTION: The peripheral end of a fillet 61 is held to the inside from the peripheral end of a metallized layer 57 so as to satisfy predetermined conditions indicated in the claim 1. That is, a ratio (F/H) of the length F of the base of a fillet 61 to the height H of the fillet 61 is 4.3 or above. Accordingly, the joint strength of a stud 23 is increased, producing an effect that breakage such as a crack is hardly caused in the periphery of the metallized layer 57 with the stud 23 joined thereto. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor element inspection substrate provided with a protruding member protruding from a substrate surface for mounting on a semiconductor element inspection apparatus.

  In recent years, there has been an increasing demand for IC inspection in units of Si wafers, and in particular, at the present time when the size of Si wafers is increasing, it is necessary to deal with wafers having a diameter of 300 mm (12 inches), for example.

  In inspecting these wafers, a ceramic element inspection substrate made of ceramic has been developed from the viewpoint of strength, insulation, etc., and the semiconductor element inspection substrate is fixed to a substrate holding device (Patent Document). 1).

  The semiconductor element inspection substrate includes a connection terminal that contacts an IC on the surface of a multilayer ceramic substrate having a conductive layer therein, and protrudes from the substrate surface to fix the semiconductor element inspection substrate to the substrate holding device. Protruding members (studs) are provided.

  This protruding member is, for example, a cylindrical metal member, and is joined to the metallized layer formed on the surface of the multilayer ceramic substrate by a brazing material.

JP 2006-343350 A

  However, in the conventional technology, the fillet formed of the brazing material is spread to the same position as the end of the metallized layer or is formed only to a position slightly pulled down from the end. When the semiconductor element inspection substrate is fixed to the substrate holding device, a large force is applied to the protruding member and the multilayer ceramic substrate. Therefore, especially when the strength of the multilayer ceramic substrate is low, the ceramic substrate around the edge of the metallized layer. There was a problem that cracks and the like entered the main body.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor element inspection substrate that is less susceptible to damage such as cracks around a metallized layer to which a protruding member is bonded. .

  (1) The invention of claim 1 is a semiconductor device inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a protruding member that protrudes from the substrate surface via a brazing material layer on the metallized layer. The difference between the radial length ML of the metallized layer and the same radial length RL of the bottom surface of the brazing material layer (ML−RL) centering on the area center of the bottom surface of the protruding member Is 0.65 mm or more over the entire outer periphery of the protruding member.

  In the present invention, for example, as shown in FIG. 6A, the difference (ML−RL) between the radial length ML of the metallized layer and the same radial length RL of the bottom surface of the brazing material layer, that is, the same The distance between the outer peripheral end of the metallized layer and the outer peripheral end of the brazing material layer in the radial direction is 0.65 mm or more over the entire outer periphery of the protruding member.

  When this condition is satisfied, the stress generated at the end of the brazing material is relaxed in the metallized layer at the cooling stage in the brazing process, and as shown in Tables 1 and 4 of the experimental examples later. The bonding strength (adhesion strength) of the protruding member can be sufficiently ensured.

  The radial direction is a direction extending from the central axis passing through the center of the area (perpendicular to the substrate surface) to the outside at right angles (thus parallel to the substrate surface), and when the bottom surface of the protruding member is a circle. , In the radial direction (the same applies hereinafter).

  (2) The invention of claim 2 is a semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a protruding member protruding from the substrate surface via a brazing material layer on the metallized layer. The ratio (F / H) of the length F of the bottom of the fillet of the brazing material layer and the height H of the fillet on the outer periphery of the protruding member is 4.3 or more.

  In the present invention, for example, as shown in FIG. 6B, the ratio (F / H) of the length F of the bottom of the fillet (fillet) and the height H of the fillet is 4.3 or more. As shown in Table 1 and Table 2 of the later experimental examples, there is an effect that the bonding strength of the protruding member is high.

Here, the length F of the bottom of the fillet is the length of the fillet portion in the direction perpendicular to the outer peripheral surface of the protruding member (or the normal direction when the protruding member is circular).
(3) The invention of claim 3 is a semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a protruding member that protrudes from the substrate surface via a brazing material layer on the metallized layer. The ratio (M / S) between the surface area M of the metallized layer and the bottom area S of the protruding member is 1.8 or more and 4.0 or less.

  In the present invention, for example, as shown in FIG. 6C, the ratio (M / S) between the surface area M of the metallized layer and the bottom area S of the protruding member is 1.8 or more and 4.0 or less. As shown in Tables 1 and 3 of the later experimental examples, there is an effect that the bonding strength of the protruding member is high.

  In addition, when M / S exceeds 4.0, the bottom area of the projecting member becomes smaller than necessary with respect to the area of the metallized layer, and the strength of the projecting member itself is higher than that of the projecting member, the metallized layer, and the multilayer ceramic. It is lower than the adhesive strength with the substrate, and sufficient mechanical strength cannot be obtained.

  (4) The invention of claim 4 is a semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate and a protruding member protruding from the substrate surface via a brazing material layer on the metallized layer. When the semiconductor element inspection substrate is viewed in the thickness direction, the radial direction length ML of the metallized layer and the same diameter of the bottom surface of the projecting member are centered on the center of the area of the bottom surface of the projecting member. The range in which the ratio (ML / SL) to the direction length SL is 1.4 or more is 62% or more of the central angle of the protruding member.

  In the present invention, for example, as shown in FIG. 6C, the ratio (ML / SL) of the radial length ML of the metallized layer to the same radial length SL of the bottom surface of the protruding member is 1.4. For example, as shown in FIG. 9, the above range is 62% or more of the central angle of the protruding member (the ratio of the central angle of the white portion of the circle in the same figure). There is an effect that the joint strength of the protruding member is high.

  Note that the ratio (ML / SL) between the radial length ML of the metallized layer and the same radial length SL of the bottom surface of the protruding member is the length of the metallized layer from the center in the same radial direction. It is a ratio to the length of the protruding member (the same applies hereinafter).

  (5) The invention of claim 5 is a semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a projecting member projecting from the substrate surface via a brazing material layer on the metallized layer. When the semiconductor element inspection substrate is viewed in the thickness direction, the radial length ML of the metallized layer and the bottom surface of the brazing material layer are the same with the center of the area of the bottom surface of the protruding member as the center. The range in which the ratio (ML / RL) to the length FL in the radial direction is 1.1 or more is 62% or more of the central angle of the protruding member.

  In the present invention, for example, as shown in FIG. 6C, the ratio (ML / RL) of the length ML in the radial direction of the metallized layer and the length RL in the same radial direction of the bottom surface of the brazing material layer is 1.1. Since the above range is 62% or more of the central angle of the protruding member as shown in FIG. 9 (ratio of the central angle of the white portion of the circle in the same figure), as shown in the later experimental example, There is an effect that the joint strength of the member is high.

(6) The invention of claim 6 is characterized in that the multilayer ceramic substrate is made of glass ceramic.
The present invention exemplifies a ceramic material of a multilayer ceramic substrate. In other words, when the ceramic component is glass ceramic, the strength is weaker than when glass is not included, but the present invention can suppress the occurrence of cracks and the like even with such a weak material. it can.

The configuration of the invention of each claim will be described below.
The protruding member is a member that is bonded to the surface of the multilayer ceramic substrate and protrudes outward (for example, vertically) from the surface, and a metal such as Kovar can be used as the material. Moreover, as the shape, a columnar (cylindrical) member having a circular bottom surface can be employed.

  Further, the projecting member is not limited to a member having the same cross-sectional shape or diameter (perpendicular to the axis) along the axial direction, and a member having a different cross-sectional shape or diameter along the axial direction can be adopted. For example, it is composed of, for example, a disk-shaped large-diameter portion joined to a multilayer ceramic substrate, and a cylindrical-shaped (smaller diameter than the large-diameter portion) projecting from the large-diameter portion (away from the substrate). Configuration can be adopted.

In particular, according to the present invention, the area of the bottom surface of the large-diameter portion is 60 to 110 mm ² (diameter 8.7 to 12 mm in the case of a disk), and the cross-sectional area (perpendicular to the axis) of the small-diameter portion is 7 to ²⁰ mm ² In this case, a large effect can be obtained when a projecting member having a size is joined to the multilayer ceramic substrate as in the range of 3 to 5 mm in diameter.

-As a ceramic material which comprises the said multilayer ceramic substrate, an alumina is employable, for example. Further, for example, glass ceramics mainly composed of mullite (3Al ₂ O ₃ .2SiO ₂ ) and borosilicate glass can be employed.

-As a material of the metallized layer, tungsten, molybdenum, silver, copper, or an alloy thereof can be adopted.
-As a material of the said brazing material, Au-Sn type | system | group, Ag-Cu type material, etc. are employable.

It is explanatory drawing which fractures | ruptures and shows the board | substrate for a semiconductor element test | inspection and board | substrate holding | maintenance apparatus of 1st Example. It is a top view of the board | substrate for semiconductor element inspection. It is explanatory drawing which expands and shows a multilayer ceramic substrate. It is explanatory drawing which expands and shows the metallization layer periphery of the board | substrate for semiconductor element inspection. (A) is a top view which shows the stud joined to the metallization layer, (b) is the A-A 'sectional drawing. It is explanatory drawing which shows the position and names, such as each dimension. It is explanatory drawing which shows the formation process of a metallizing layer. It is explanatory drawing which shows the brazing process of a stud. It is explanatory drawing which shows the ratio of the center angle of Claims 4 and 5.

  Embodiments of the present invention will be described below with reference to the drawings.

a) First, a semiconductor element inspection substrate of this embodiment and a substrate holding apparatus for fixing the substrate will be described with reference to FIG.
As shown in FIG. 1, the semiconductor element inspection substrate 1 of this embodiment is used by being fixed to a substrate holding device 3 when performing electrical inspection of a silicon wafer (not shown) which is one of the semiconductor elements. It is what is done.

  In the substrate holding device 3, a wiring board 7 is laminated on a drive board 5 which is a reinforcing plate, and a square frame 9 is attached around the lower side of the wiring board 7.

On the other hand, the semiconductor element testing substrate 1 is disposed on the lower surface side of the wiring board 7 in the frame 9 via a plate-shaped interposer 11.
Contact terminals 13 that come into contact with the silicon wafer are provided on the lower surface side of the semiconductor element inspection substrate 1, and contact terminals 15 and 17 are also provided on both sides of the interposer 11. The contact terminals 15 and 17 on each surface side of the interposer 11 are in contact with the wiring board 7 and the semiconductor element inspection substrate 1, respectively.

  Further, a cylindrical projecting member (stud) 23 having a large diameter portion 19 and a small diameter portion 21 which will be described in detail later is joined to the center of the semiconductor element inspection substrate 1. A cylindrical extension stud 29 having a large-diameter portion 25 and a small-diameter portion 27 is coupled by a screw structure. In other words, the stud 23 and the extension stud 29 are integrally coupled by screwing the screw portion 31 above the stud 23 and the screw hole 33 below the extension stud 29.

  The extension stud 29 is disposed so as to pass through a through hole 35 opened in the thickness direction at the center of the drive board 5 and the wiring board 7, and a nut 39 is screwed into the screw portion 37 above the extension stud 29. In addition, a tapered spring washer 43 that is in contact with the step portion 41 of the through hole 35 is fitted below the nut 39.

  That is, the through-hole 35 has a small diameter at the center thereof, and the upper surface of the large-diameter portion 25 of the extension stud 29 abuts on the lower side of the small-diameter portion 44 of the drive board 5. The spring washer 43 is in contact with the (step portion 41).

  Therefore, by tightening the nut 39, the extension stud 29 and the stud 23 (and hence the semiconductor element inspection substrate 1) are moved upward, whereby the semiconductor element inspection substrate 1 can be fixed to the drive board 5.

  The semiconductor element inspection substrate 1 described above corresponds to, for example, a φ300 mm (12 inch) silicon wafer, and the contact fitting 13 contacts the terminal of the IC chip on the silicon wafer (before cutting out each IC chip). Thus, it is possible to inspect a large number of IC chips at a time.

b) Next, the semiconductor element inspection substrate 1 will be described in detail with reference to FIGS.
As shown in FIG. 2, the semiconductor element inspection substrate 1 mainly includes a rectangular plate-shaped multilayer ceramic substrate 45 having a length of 96.25 mm, a width of 91.17 mm, and a thickness of 4.45 mm. The stud 23 is brazed on one surface with a brazing material containing Ag and Cu.

Of these, the multilayer ceramic substrate 45 has a structure in which a plurality of glass ceramic layers 47 are laminated in the thickness direction as shown in FIG.
The glass ceramic layer 47 is made of, for example, a low temperature fired glass ceramic obtained by firing a mixture of a glass component and a ceramic component at a low temperature of about 800 to 1050 ° C., for example. Specifically, each glass ceramic layer 47 (and hence the glass ceramic portion of the multilayer ceramic substrate 45) is made of a glass ceramic whose main component is mullite and borosilicate glass.

  A large number of electrodes 49 and 51 are formed on both surfaces of the multilayer ceramic substrate 45, and an internal wiring layer 53 is formed inside the multilayer ceramic substrate 45 (specifically, at the boundary between the glass ceramic layers 47). ing. Furthermore, an interlayer connection conductor (via) 55 extending in the thickness direction of the substrate is formed so as to electrically connect the electrode 49 on the front surface of the multilayer ceramic substrate 45 and the electrode 51 on the back surface via the internal wiring layer 53. ing.

  Therefore, as shown in FIG. 2, a large number of electrodes 49 are exposed on the surface of the multilayer ceramic substrate 45, and the contact terminals 13 (see FIG. 1) described above are arranged on the surface of the electrodes 49. ing.

  The electrodes 49 and 51 can be composed of Ti, Cr, Mo, Cu, Ni, Au, and conductors combining them, and the conductors constituting the internal wiring layer 53 and the vias 55 are made of a sintered glass ceramic. In particular, a conductor such as Ag, an Ag / Pt alloy, or an Ag / Pd alloy that can be simultaneously fired at a low temperature can be used.

In this embodiment, the electrodes 49 and 51 have a multilayer structure (not shown) in which a Cu layer, a Ni layer, and an Au layer are sequentially formed on a Ti layer.
Further, a metallized layer 57 is formed on the surface of the multilayer ceramic substrate 45 at the center and four corners of the substrate surface, in addition to a large number of electrodes 49.

  4, the metallized layer 57 is a cross-shaped pattern in which 15.7 mm in length × 17.0 mm in width and corners of four corners are cut out by 2.5 mm in length × 2.5 mm in width. is there. The metallized layer 57 is formed by sequentially stacking Ti / Cu / Ni / Au from the lower layer.

  On the other hand, as shown in FIG. 5, the stud 23 has, for example, an outer diameter of 3.7 mm × height of 5.4 mm on a disk-shaped large diameter portion 19 having an outer diameter of 9.66 mm × thickness of 1.0 mm. The cylindrical small-diameter portion 21 has a cylindrical structure formed coaxially, and the outer periphery of the small-diameter portion 21 is a screw portion 33. As a material of the stud 23, for example, Kovar can be adopted. The stud 23 is plated with Ni and Au in order to improve the wettability of the brazing material.

  The stud 23 is bonded to the center (area center) of the metallized layer 57 and the center of the stud 23 on the metallized layer 57 at the center of the multilayer ceramic substrate 45 by, for example, Au—Sn brazing material. Has been.

  That is, a brazing material layer 59 made of a brazing material is formed between the metallized layer 57 and the stud 23, and this brazing material layer 59 fillets (brazing) on the outer peripheral side of the large diameter portion 19 of the stud 23. Material reservoir portion) 61 is formed.

  In particular, in this embodiment, the outer peripheral end of the fillet 61 is drawn inward from the outer peripheral end of the metallized layer 57 over the entire outer periphery of the stud 23 so as to satisfy the predetermined condition shown in the first aspect.

  That is, as shown in FIG. 6A, centering on the area center of the bottom surface of the stud 23, the radial length ML of the metallized layer 57 and the same radial length RL of the bottom surface of the brazing material layer 59 are provided. (ML−RL) is 0.65 mm or more over the entire outer periphery of the stud 23.

Further, in this embodiment, the outer peripheral end of the fillet 61 is pulled inward from the outer peripheral end of the metallized layer 57 so as to satisfy the predetermined condition shown in claim 2.
That is, as shown in FIG. 6B, the ratio (F / H) between the length F of the bottom side of the fillet 61 and the height H of the fillet 61 is 4.3 or more.

  Here, the length F of the bottom side of the fillet 61 is a length (average value) protruding from the outer peripheral surface of the stud 23 to the outside in the normal direction, and the height H of the fillet 61 is a metallized layer. This is the height (average value) of the fillet 61 from the surface of 57.

c) Next, a method for manufacturing the semiconductor element inspection substrate 1 will be described in detail with reference to FIGS.
(1) First, a method for manufacturing the multilayer ceramic substrate 45 will be described.

- As the ceramic raw material powder, average particle size: 3 [mu] m, specific surface area: a borosilicate glass powder of 2.0 m ² / g SiO of _{2, Al 2 O 3, B} 2 O 3 as a main component, the average particle diameter: 2 μm and a specific surface area: 3.0 m ² / g mullite powder were prepared.

Furthermore, an acrylic binder and DOP (dioctyl phthalate) were prepared as a binder component and a plasticizer component during sheet molding.
Then, a borosilicate glass powder and a mullite powder were introduced into an alumina pot at a mass ratio of 50:50 in a total amount of 1000 g, and 120 g of an acrylic resin was added. Furthermore, a ceramic slurry was obtained by putting an amount of a solvent (MEK: methyl ethyl ketone) and a plasticizer (DOP) necessary for giving an appropriate slurry viscosity and sheet strength into the pot and mixing them for 3 hours.

A first green sheet (for each glass ceramic layer 47) having a thickness of 0.15 mm was produced by the doctor blade method using the obtained ceramic slurry.
In addition to the step of producing the first green sheet, alumina having an average particle size of 2 μm and a specific surface area of 1 m ² / g is used as a ceramic raw material powder to produce a constraining sheet (second green sheet). Powder was prepared.

Furthermore, an acrylic binder was prepared as a binder component during sheet formation, DOP as a plasticizer component, and MEK as a solvent.
As in the case of the first green sheet, 1000 g of alumina powder and 120 g of acrylic resin are put into an alumina pot, and a necessary amount of solvent (MEK) is added to give slurry viscosity and sheet strength. And a plasticizer (DOP) were added and mixed for 3 hours to obtain a slurry.

Using this slurry, a second green sheet having a thickness of 0.30 mm was produced by a doctor blade method.
Next, a via hole was formed in the first green sheet, and the via hole was filled with, for example, an Ag-based paste. Further, a conductive pattern (to be the internal wiring layer 53) was formed by printing using an Ag-based paste at a required location on the surface of the first green sheet.

-Next, each 1st green sheet was laminated | stacked sequentially, and also the 2nd ceramic sheet was laminated | stacked on both sides of the laminated body.
-Next, it baked for 30 minutes (degreasing baking) at 850 degreeC, applying the pressurization force of 0.2 MPa from the both sides of the lamination direction of the laminated body which laminated | stacked the 2nd ceramic sheet with the press machine.

  This second green sheet remaining on both main surfaces of the sintered body is removed with an ultrasonic cleaner using water as a medium, and both outer surfaces of the sintered body are made of alumina. Polishing was performed by lapping using quality abrasive grains. After that, polishing may be performed.

(2) Next, a method for forming the metallized layer 57 will be described.
As shown in FIG. 7, a Ti thin film 71 and a Cu thin film 73 were sequentially formed on the polished sintered body by sputtering.

Next, a resist 75 was formed thereon so as to cover other than the metallized layer 57 pattern.
Next, a Cu layer 77 and a Ni layer 79 were formed on the pattern portion of the metallized layer 57 by electrolytic plating.

Next, after removing the resist 75, the Cu thin film 71 and the Ti thin film 73 other than the pattern of the metallized layer 57 were removed by etching.
Thereafter, the Ni layer 81 and the Au layer 83 were formed around the remaining pattern portion by electrolytic plating, and the metallized layer 57 was completed.

  In addition, on the surface of the sintered body, at the same time as the formation of the metallized layer 57, the position corresponding to the via 55 is formed by sputtering, resist, plating, or the like (as described above, Ti layer, Cu layer, Ni layer). Electrodes 49, 51 (consisting of an Au layer) are formed.

(3) Next, a method for joining the studs 23 will be described.
As shown in FIG. 8B, a 80Au / 20Sn brazing material foil (preform) 91 is arranged on the metallized layer 57, and a carbon brazing jig as shown in FIG. 8A. The multilayer ceramic substrate 45 was set in the container 93 and a carbon lid 97 having a through hole 95 was provided.

Next, as shown in FIG. 8B, the stud 23 was inserted from the through hole 95 of the lid 97 and placed on the brazing material foil 91, and a stainless steel weight 99 was placed on the stud 23.
And it brazed in the belt furnace of a reducing atmosphere. In detail, it hold | maintained at 300 degreeC or more for 30 minutes, and cooled after that.

As a result, the semiconductor element inspection substrate 1 in which the studs 23 were joined on the metallized layer 57 was completed.
d) In the semiconductor element testing substrate 1 of this embodiment manufactured in this way, the length ML in the radial direction of the metallized layer 57 around the center of the area of the bottom surface of the stud 23 and the brazing material layer 59 Since the difference (ML−RL) with the same radial length RL of the bottom surface of the steel plate is 0.65 mm or more over the entire outer circumference of the stud 23, it occurs at the brazing material end in the cooling stage in the brazing process. As the stress to be relaxed in the metallized layer 57, the bonding strength of the stud 23 can be sufficiently ensured as shown in Tables 1 and 4 of the experimental examples later.

  Further, since the ratio (F / H) of the bottom side length F of the fillet 61 to the height H of the fillet 61 is 4.3 or more, the stud 23 is joined as shown in an experimental example described later. In the glass ceramic layer 47 around the metallized layer 57, an effect that damage such as cracks hardly occurs is obtained. Thereby, the joint strength of the stud 23 is improved.

  In addition, as long as the range of numerical limitation of the ratio is satisfied, the pattern of the metallized layer 57 is not limited to a cross shape, and various shapes such as a circle can be adopted. Similarly, the shape of the bottom surface of the stud 23 is also limited to a circle. It is possible to adopt various shapes.

The present embodiment corresponds to the invention of claim 3.
Here, as in the first embodiment, the stud has a circular bottom, and the metallized layer also has a cross-shaped pattern. Matters not particularly described such as dimensions are the same as those in the first embodiment.

  Particularly in this embodiment, as shown in FIG. 6C, the ratio (M / S) of the surface area M of the metallized layer to the bottom area S of the stud is 1.8 or more. As shown in FIG. 4, there is an effect that the joint strength of the stud is high.

This embodiment corresponds to the invention of claim 4.
Here, as in the first embodiment, the stud has a circular bottom, and the metallized layer also has a cross-shaped pattern. Matters not particularly described such as dimensions are the same as those in the first embodiment.

  In this example, when the center of the area of the metallization layer and the center axis of the stud are the same center, as shown in FIG. 6C, the length in the radial direction of the metallization layer (metallization layer length) ML The range in which the ratio (ML / SL) of the bottom surface of the stud in the same radial direction (stud bottom surface length: radius) SL is 1.4 or more is 62, which is the center angle of the stud as shown in FIG. % Or more (ratio of the central angle of the white part of the circle in the figure), the effect is that the joint strength of the stud is high.

  When the metallized layer is also a circle, the metallized layer length ML is a radius, and the diameter is 2 ML as shown in FIG.

This embodiment corresponds to the invention of claim 5.
Here, as in the first embodiment, the stud has a circular bottom, and the metallized layer also has a cross-shaped pattern. Matters not particularly described such as dimensions are the same as those in the first embodiment.

In this example, when the center of the area of the metallization layer and the center axis of the stud are the same center, as shown in FIG. 6C, the length in the radial direction of the metallization layer (metallization layer length) ML As shown in FIG. 9, the range in which the ratio (ML / RL) of the bottom surface of the brazing material layer to the same radial length (brazing material layer bottom surface length: radius) RL is 1.1 or more is shown in FIG. Since it is 62% or more of the central angle (ratio of the central angle of the white portion of the circle in the figure), there is an effect that the joint strength of the stud is high.
<Experimental example>
Next, experimental examples conducted for confirming the effects of the present invention will be described.

  In this experimental example, as an example of the present invention, a substrate for testing a semiconductor element was manufactured by the same manufacturing method as in Example 1 except for the dimensions shown in Tables 1 to 4 below, and the joint strength of the studs (Tensile strength) was examined. The results are also shown in Tables 1 to 4.

  However, in this experimental example, the metallized layers of Experimental Examples 1 and 5 to 7 are circular, and the metallized layers of Experimental Examples 2 to 4 are cruciforms (similar shapes) as shown in FIG. . Further, the planar shape of the brazing material layer and the bottom surface of the stud are circular in all the examples.

  Here, the data in Table 2 show values corresponding to Claim 2 (F / H is 4.3 or more), and the data in Table 3 shows values for Claim 3 (M / S is 1.8). Above). The data in Table 4 shows an example in which (ML-RL) is 0.65 mm or more in the invention of claim 1. The data of Table 4 shows that in the invention of claim 4, the range in which ML / SL is 1.4 or more is 62% or more of the central angle, and in the invention of claim 5, ML / RL is 1 An example in which the range of 1 or more is 62% or more of the central angle is shown.

  In addition, each dimension in Table 1 to Table 4 is shown in FIG. 6 and is a value obtained by calculating an average of a plurality of places (9 places). Also. The tensile strength is a value measured by a load cell (force detector) when the stud is peeled when the multilayer ceramic substrate is fixed and the stud is pulled upward.

In addition, as a comparative example deviating from the present invention, a semiconductor element inspection substrate was manufactured in the same manner as the present invention example with the dimensions shown in Tables 5 to 8 below, and the joint strength (tensile strength) of the stud was examined. It was. The results are also shown in Tables 5-8.
Here, the data in Table 6 shows values corresponding to the comparative example of claim 2, and the data in Table 7 shows values for the comparative example of claim 3. The data in Table 8 shows an example in which (ML-RL) is less than 0.65 mm as a comparative example of claim 1. The data in Table 8 shows an example in which ML / SL is less than 1.4 as a comparative example of claim 4, and an example in which ML / RL is less than 1.1 as a comparative example of claim 5. Yes. In addition, the metallized layer, the brazing material layer, and the bottom surface of the stud of the comparative example are all circular.

As apparent from Tables 1 to 8, those having the configuration of the inventions of claims 1 to 5 have a remarkable effect that the bonding strength is higher than that of the comparative example.
Needless to say, the present invention is not limited to the above-described embodiments, and can be implemented in various modes without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device inspection substrate 23 ... Stud 45 ... Multilayer ceramic substrate 47 ... Glass ceramic layer 49, 51 ... Electrode 57 ... Metallization layer 59 ... Brazing material layer

Claims (6)

A substrate for testing a semiconductor element comprising a metallized layer on the surface of a multilayer ceramic substrate, and a projecting member projecting from the substrate surface via a brazing material layer on the metallized layer,
Centering on the center of the area of the bottom surface of the projecting member, the difference (ML−RL) between the length ML in the radial direction of the metallized layer and the length RL in the same radial direction of the bottom surface of the brazing material layer is A semiconductor element inspection substrate characterized by being 0.65 mm or more over the entire outer periphery of the protruding member. A semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a projecting member projecting from the substrate surface via a brazing material layer on the metallized layer,
The semiconductor element testing substrate, wherein a ratio (F / H) of the length F of the bottom of the fillet of the brazing material layer to the height H of the fillet on the outer periphery of the protruding member is 4.3 or more . A semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a projecting member projecting from the substrate surface via a brazing material layer on the metallized layer,
The semiconductor element testing substrate, wherein a ratio (M / S) of a surface area M of the metallized layer to a bottom area S of the protruding member is 1.8 or more and 4.0 or less. A semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a projecting member projecting from the substrate surface via a brazing material layer on the metallized layer,
When the semiconductor element inspection substrate is viewed in the thickness direction, the radial length ML of the metallized layer and the same radial length of the bottom surface of the protruding member are centered on the area center of the bottom surface of the protruding member. The semiconductor element inspection substrate, wherein the ratio (ML / SL) to the thickness SL is 1.4% or more of the central angle of the protruding member. A semiconductor element inspection substrate comprising a metallized layer on the surface of a multilayer ceramic substrate, and a projecting member projecting from the substrate surface via a brazing material layer on the metallized layer,
When the semiconductor element inspection substrate is viewed in the thickness direction, the radial direction length ML of the metallized layer and the same radial direction of the bottom surface of the brazing material layer are centered on the area center of the bottom surface of the protruding member. The range for which the ratio (ML / RL) to the length RL is 1.1 or more is 62% or more of the central angle of the protruding member.   The said multilayer ceramic substrate consists of glass ceramics, The board | substrate for a semiconductor element test | inspection of any one of Claims 1-5 characterized by the above-mentioned.

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