JP2010169407A - Apparatus for producing sample - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To produce a sample with a good cross section exposed by preventing a shielding plate for shielding ion beams from moving to the direction toward the ion beams during processing of the sample with the ion beams, by an apparatus for producing a sample which holds a sample at a predetermined position with respect to the ion beams to produce a sample with a cross section exposed by irradiating with the ion beams. <P>SOLUTION: The apparatus for producing a sample is provided with a first supporting member 2 with a supported base end and a free distal end; a second supporting member 9 with a base end supported by the distal end of the first supporting member 2 and a free distal end directed to the base end of the first supporting member 2; and a shielding plate 10 supported by the second supporting member 9; and a heater 13 attached on the second supporting member 9. The second supporting member 9 is heated by the heater 13 to expand toward the direction to the base end of the first supporting member and holds a side edge toward the distal end of the first supporting member 2 of the shielding plate 10 as an irradiation position of ion beams B. A sample 101 is disposed at a position where the ion beams B are shielded by the shielding plate 10 and a processing is performed on a part of the sample 101 exposed from the side edge of the shielding plate 10. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a sample preparation apparatus for preparing a sample observed with a scanning electron microscope or a transmission electron microscope.

  Until now, as an apparatus for preparing a sample observed with a scanning electron microscope (SEM) or a transmission electron microscope (TEM), for example, as described in JP 2005-037164 A, a sample preparation apparatus Has been proposed.

  As shown in FIG. 4, in this sample preparation apparatus, etching is performed by irradiating the sample 101 with the ion beam B emitted from the ion beam generator, and the sample 101 is processed into a shape suitable for observation by SEM or TEM. It is a device to do. In this sample preparation apparatus, a shielding plate 102 having a linear side edge (edge portion) is disposed on the sample 101, and the sample 101 is subjected to an ion beam B that has passed next to the side edge of the shielding plate 102. Is configured to be processed. A flat cross section is formed in the sample 101 along the linear side edge of the shielding plate 102.

  A sample 101 manufactured using such a sample manufacturing apparatus is set in an SEM or a TEM, and an electron beam is irradiated onto a cross section that appears by ion etching, and observation is performed.

JP 2005-037164 A

  By the way, in the sample preparation apparatus described above, the shielding plate 102 is supported by a support member 103 that is supported on the base end side and has a free end on the distal end side. The ion beam B is applied to one side edge of the shielding plate 102 toward the tip of the support member 103, and the sample 101 is processed along this one side edge.

  At this time, in this sample preparation apparatus, the support member 103 is heated by the irradiation of the ion beam B, thereby causing thermal expansion. When the support member 103 is thermally expanded, the shielding plate 102 is gradually moved to one side edge irradiated with the ion beam B, that is, the side approaching the ion beam B, as indicated by an arrow a in FIG. It will be.

  When the shielding plate 102 gradually moves to one side edge irradiated with the ion beam B, one side edge portion of the shielding plate 102 enters the ion beam B. The area covered by 102 will gradually expand. In the sample 101 processed by the ion beam B, when the region covered by the shielding plate 102 is gradually enlarged, a new portion is not processed by the ion beam B, and a good cross section does not appear, and a good sample can be manufactured. Disappear.

  Therefore, the present invention has been proposed in view of the above-described circumstances, and its purpose is to prepare a sample that holds the sample in a predetermined position with respect to the ion beam in order to produce a sample whose cross section is exposed by ion beam irradiation. In the apparatus, during the processing of the sample by the ion beam, the shielding plate for blocking the ion beam is prevented from moving in the direction approaching the ion beam, so that the processing by the ion beam is performed satisfactorily. It is an object of the present invention to provide a sample preparation apparatus capable of producing a sample in which the above appears.

In order to solve the above-mentioned problems and achieve the above purpose,
The invention according to claim 1 is a sample preparation apparatus for holding a sample in a predetermined position with respect to the ion beam in order to prepare a sample whose cross section is exposed by irradiation with an ion beam. A first support member whose side is a free end, a proximal end side supported by the distal end side of the first support member, and the distal end side being a free end facing the proximal end side of the first support member A second support member; a heating means attached to the second support member for heating the second support member; and a shielding plate supported by the second support member;
The second support member has a structure that is heated by the heating means and expands toward the proximal end side of the first support member, and on the distal end side of the first support member of the shielding plate. The shielding plate is held with the side edge toward the ion beam being irradiated, and the sample is installed at a position where the ion beam is shielded by the shielding plate. The processing by the ion beam is performed.

  The invention according to claim 2 is characterized in that the second support member is supported by heat insulation on the tip side of the first support member.

The invention according to claim 3 is a sample preparation apparatus for holding a sample at a predetermined position with respect to the ion beam in order to prepare a sample with a cross-section exposed by irradiation with an ion beam, the base end side being supported, A first support member having a free end on the distal end side, a proximal end side supported by the distal end side of the first support member, and a distal end side as a free end facing the proximal end side of the first support member A second support member, and a shielding plate supported by the second support member,
The second support member is structured to be thermally insulated and supported on the distal end side of the first support member, and one side edge of the shielding plate toward the distal end side of the first support member is formed on the ion beam. The shielding plate is held as an irradiation position of the sample, and the ion beam is processed to a portion exposed from one side edge of the shielding plate of the sample placed at a position where the ion beam is shielded by the shielding plate. It is characterized by making it.

  (1) According to the first aspect of the present invention, the second end is supported on the distal end side of the first support member and the distal end side is a free end facing the proximal end side of the first support member. The supporting member is heated by the heating means and has a structure that expands toward the proximal end side of the first supporting member. One side edge of the shielding plate toward the distal end side of the first supporting member is ionized. The shielding plate is held as a beam irradiation position, and the ion beam is processed to a portion exposed from one side edge of the shielding plate of the sample placed at a position where the ion beam is shielded by the shielding plate.

  Therefore, in this sample preparation apparatus, the second support member is heated by heat conduction from the shielding plate heated by the irradiation of the ion beam, and further, the first support member is heated by heat conduction from the second support member. When heated to cause thermal expansion, the second support member is further heated by the heating means and expands more in the proximal direction of the first support member. Therefore, the shielding plate can be moved in the direction of the other side edge toward the proximal end side of the first support member, that is, in the direction away from the ion beam, or not moved in any direction. .

  (2) According to the invention described in claim 2, since the second support member is supported by heat insulation on the tip side of the first support member, the second support member is further heated by the heating means. At this time, it is possible to make it difficult to transfer heat from the second support member to the first support member. For this reason, the second support member further heated by the heating means expands greatly in the proximal direction of the first support member. Therefore, the shielding plate is moved more efficiently in the direction of the other side edge toward the proximal end side of the first support member, that is, in the direction away from the ion beam, or not moved in any direction. can do.

  (3) According to the invention described in claim 3, the second end is supported on the distal end side of the first support member and the distal end side is a free end facing the proximal end side of the first support member. The support member is structured to be thermally insulated and supported on the distal end side of the first support member, and one side edge of the shielding plate toward the distal end side of the first support member is positioned at the irradiation position of the ion beam. The shielding plate is held, and the ion beam is processed at a position exposed from one side edge of the shielding plate of the sample placed at a position where the ion beam is shielded by the shielding plate. Has been made.

  Therefore, in this sample preparation apparatus, the second support member is heated by heat conduction from the shielding plate heated by the irradiation of the ion beam, thereby causing thermal expansion. At this time, since the second support member is supported by heat insulation on the distal end side of the first support member, it is possible to make it difficult for heat from the second support member to be transmitted to the first support member. Therefore, the thermal expansion of the first support member can be suppressed very slightly. Therefore, the shielding plate can be moved in the direction of the other side edge toward the proximal end side of the first support member, that is, in the direction away from the ion beam, or not moved in any direction. .

  Therefore, in the sample preparation apparatus according to the present invention, during the processing of the sample by the ion beam, the shielding plate that blocks the ion beam is prevented from moving in the direction approaching the ion beam, and a new part is processed by the ion beam. Thus, a sample having a good cross section can be produced.

  That is, the present invention cuts off an ion beam during processing of the sample by the ion beam in a sample preparation apparatus that holds the sample at a predetermined position with respect to the ion beam in order to produce a sample whose cross section is exposed by irradiation of the ion beam. Provided is a sample preparation device in which a shielding plate is prevented from moving in a direction approaching an ion beam, and processing with an ion beam is performed satisfactorily so that a sample having a good cross section can be manufactured. It is something that can be done.

It is a top view which shows the structural example of the sample preparation apparatus which concerns on this invention. It is a side view which shows the structural example of the sample preparation apparatus which concerns on this invention. It is a side view which shows the principal part of the sample preparation apparatus which concerns on this invention. It is a side view which shows the structure of the conventional sample preparation apparatus. It is a side view which shows the principal part of the other sample preparation apparatus which concerns on this invention. It is a side view which shows the principal part of the other sample preparation apparatus which concerns on this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the technical scope of the present invention is not limited by this illustration. In each figure, the same reference numerals are given to the same or similar operations, and detailed description is not repeated.

(Embodiment 1)
FIG. 1 is a plan view showing a configuration example of a sample preparation apparatus 200 according to the present invention.

  A sample preparation apparatus 200 according to the present invention, as shown in FIG. 1, prepares a sample 101 whose cross section is exposed by irradiation with an ion beam B, so that the sample 101 is held at a predetermined position with respect to the ion beam B. Device.

  The sample preparation device 200 is used by being housed in a vacuum chamber (not shown). An ion gun (ion beam irradiation means) is attached to the upper part of the vacuum chamber. As this ion gun, a gas ion gun can be used. For example, a gas ion gun that ionizes Ar gas by discharge to release Ar ions can be used. The ion beam B is emitted from this ion gun.

  And the sample preparation apparatus 200 has a pair of 1st support members 2 and 2 by which the base end side was supported by the base 1 and the front end side was made into the free end, as shown in FIG. The first support members 2 and 2 are configured such that the proximal ends are integrated and the distal ends are parallel to each other. The first support members 2 and 2 are supported on the base 1 so as to be movable in two axial directions.

  FIG. 2 is a side view showing a configuration example of the sample preparation apparatus 200.

  That is, as shown in FIG. 2, the first support members 2 and 2 are supported by the slider plate 5 on the base end side via the first linear bearing 7. The slider plate 5 is supported by the base 1 via a second linear bearing 8 orthogonal to the first linear bearing 7. A rack portion 4 that engages with an adjustment pinion gear 3 provided on the base 1 is provided on the base end side of the first support members 2 and 2. When the adjustment pinion gear 3 is rotated, the first support members 2 and 2 are moved to the side of the first support members 2 and 2 indicated by an arrow Y in FIG.

  The slider plate 5 is in contact with the tip of an adjustment screw 6 screwed to the base 1. By rotating the adjustment screw 6, the first support member 2 is moved and operated in the forward / backward direction of the first support member 2 indicated by an arrow X in FIG. 2 together with the slider plate 5. The slider plate 5 is urged toward the tip of the adjustment screw 6 by a biasing member (not shown), and is prevented from being separated from the tip of the adjustment screw 6.

  The sample preparation apparatus 200 includes a pair of second support members 9 and 9 supported on the proximal end side on the distal end side of the first support member 2. These second support members 9, 9 have free ends with their respective distal ends directed toward the proximal ends of the first support members 2, 2.

A shielding plate 10 is attached to the second support members 9 and 9 so as to be passed between the second support members 9 and 9. The shielding plate 10 is provided by the second support members 9, 9.
The direction is substantially orthogonal to the irradiation direction of the ion beam B and is supported. These second support members 9, 9 have the shielding plate 10 as the irradiation position of the ion beam B with the one side edge (edge portion) 10 a toward the distal end side of the first support member 2, 2 of the shielding plate 10. Hold. The relative position between the shielding plate 10 and the ion beam B is adjusted by moving the first support members 2 and 2 in the biaxial direction on the base 1.

  A sample 101 is placed at a position where the ion beam B is shielded by the shielding plate 10. The sample 101 is placed on the support base 11 and is placed in a state where the upper surface portion is covered with the shielding plate 10. The sample 101 is irradiated with the ion beam B at a portion exposed from the one side edge 10a of the shielding plate 10, and processing by the ion beam B is performed.

  FIG. 3 is a side view showing the main part of the sample preparation device 200.

  As shown in FIG. 3, the shielding plate 10 is fixed to the second support members 9 and 9 by leaf springs 12 and 12 attached to the second support members 9 and 9. The one side edge 10a of the shielding plate 10 is a tapered surface whose lower side enters the ion beam B side. The angle θ of the tapered surface is relative to the traveling direction (vertical direction) of the ion beam B. It is about 6 degrees.

  In the sample preparation device 200, a heater 13 is attached to the second support members 9 and 9. Reference numeral 13 a denotes a heater power source for heating the heater 13.

  The first and second support members 2, 2, 9, 9 are heated by the irradiation of the ion beam B to cause thermal expansion, but are further heated by the heater 13 attached to the second support members 9, 9. The Therefore, the second support members 9 and 9 are more thermally expanded than the first support members 2 and 2. Therefore, is the shielding plate 10 moved in the direction of the other side edge toward the proximal end side of the first support members 2, 2, that is, in the direction away from the ion beam B, as indicated by an arrow A in FIG. Or it can be prevented from moving in either direction.

(Embodiment 2)
FIG. 5 is a side view showing a main part of another sample preparation apparatus 300 according to the present invention. The sample preparation apparatus 300 has the same configuration as the sample preparation apparatus 200 except that the second support member is supported by heat insulation on the distal end side of the first support member.

  In the sample preparation device 300, the second support members 9 and 9 are supported and fixed by the first support members 2 and 2 with the heat insulating member 14 interposed therebetween. When the ion beam B is irradiated, the shielding plate 10 is heated by ion energy. The heat is transmitted to the second support members 9 and 9 and the temperature of the second support members 9 and 9 also rises. In the structure of the sample preparation apparatus 200, the heat from the shielding plate is also transmitted to the first support members 2 and 2 via the second support members 9 and 9, but in the structure of the sample preparation apparatus 300, the heat insulating member 14 Since heat conduction is interrupted, the thermal expansion of the first support members 2 and 2 can be suppressed very slightly. Therefore, the second support members 9 and 9 can be efficiently thermally expanded by reducing the heating of the second support members 9 and 9 by the heater 13 attached to the second support members 9 and 9. .

  Therefore, is the shielding plate 10 moved in the direction of the other side edge toward the proximal end side of the first support members 2, 2, that is, in the direction away from the ion beam B, as indicated by an arrow A in FIG. Or it can be prevented from moving in either direction.

(Embodiment 3)
FIG. 6 is a side view showing a main part of another sample preparation apparatus 400 according to the present invention. The sample preparation device 400 has the same structure as the sample preparation device 300 except for the heater 13 and the heater power supply 13a. That is, the second support members 9 and 9 are supported by heat insulation on the distal end sides of the first support members 2 and 2, but the heaters provided in the sample preparation apparatuses 200 and 300 are not configured. .

  When the ion beam B is irradiated, the shielding plate 10 is heated by ion energy. The heat is transmitted to the second support members 9 and 9 and the temperature of the second support members 9 and 9 also rises. In the structure of the sample preparation device 200, the heat of the second support members 9 and 9 is also transmitted to the first support members 2 and 2, but in the structure of the sample preparation device 400, the heat conduction is blocked by the heat insulating member 14. The thermal expansion of the first support members 2 and 2 can be suppressed very slightly. Therefore, even if there is no means for forcibly heating the second support members 9, 9, the second support members 9, 9 can be more thermally expanded than the first support members 2, 2.

  Therefore, is the shielding plate 10 moved in the direction of the other side edge toward the proximal end side of the first support members 2, 2, that is, in the direction away from the ion beam B, as indicated by an arrow A in FIG. Or it can be prevented from moving in either direction.

  As described above, in any of the sample preparation apparatuses 200, 300, and 400, during the processing of the sample 101 by the ion beam B, the shielding plate 10 that blocks the ion beam B moves in the direction approaching the ion beam B. Thus, a new portion on the sample 101 is processed by the ion beam B, and the sample 101 having a good cross section can be manufactured.

  In any of the sample preparation apparatuses 200, 300, and 400, the direction indicated by the arrow C in FIG. 2, that is, the direction in which the sample 101 faces from the ion beam B side (the front end side of the first support members 2 and 2). Thus, the sample 101 being processed by the ion beam B can be observed with a CCD camera, a microscope, or the like. Observation with a CCD camera or a microscope can be performed not only during processing of the sample 101 by the ion beam B but also for positioning the sample 101 prior to processing of the sample 101.

  Hereinafter, the position adjustment of the shielding plate 10 and the position adjustment of the sample 101 performed before the processing of the sample 101 by the ion beam B will be described.

  First, the position of the CCD camera (optical microscope) is adjusted. First, the sample 101 is placed on the central axis of the ion beam B without attaching the shielding plate 10 in order to make a mark of the ion beam B for position adjustment of the CCD camera on the sample 101. Then, the processing chamber is evacuated by an exhaust device, the ion beam B is emitted from the ion gun, and the ion beam B is irradiated to an arbitrary position on the sample 101 for a predetermined time.

  By irradiation with the ion beam B, the sample 101 is etched, and an ion beam mark is formed on the sample 101. Then, the position of the CCD camera is adjusted so that the ion beam trace formed on the sample 101 is observed by the CCD camera. By adjusting the position of the CCD camera in this way, the optical axis of the CCD camera and the central axis of the ion beam B intersect with each other on the sample 101.

  Such CCD camera position adjustment is performed each time the position of the central axis of the ion beam B changes, for example, after replacement of the ion gun or after heat cleaning of the ion gun.

  Next, the processing chamber is opened and the position of the shielding plate 10 is adjusted. First, the shielding plate 10 is attached to the second support members 9 and 9. At this time, the shielding plate 10 is installed such that one side edge 10a is parallel to the Y axis indicated by the arrow Y in FIG. Then, the shielding plate 10 is fixed to the second support members 9 and 9 by the leaf springs 12 and 12.

  At this time, in the image observed by the CCD camera, one side edge 10a of the shielding plate 10 is observed together with the ion beam trace. Further, the position of the shielding plate 10 is adjusted so that one side edge 10a of the shielding plate 10 is positioned on the optical axis of the CCD camera. In this way, the one side edge 10a of the shielding plate 10 is positioned on the central axis of the ion beam B.

  Next, the position of the sample 101 is adjusted. The position of the sample 101 is adjusted so that a portion where the cross section of the sample is to be obtained by processing with the ion beam B is positioned directly below the one side edge 10a of the shielding plate 10.

  Then, the processing chamber is exhausted by the exhaust device, and the sample 101 is processed by the ion beam B. The surface of the sample 101 is etched for a predetermined time by the ion beam B emitted from the ion gun and not blocked by the shielding plate 10. That is, the processing position on the sample 101 and its peripheral portion are etched by the ion beam B that has passed through the side edge 10 a of the shielding plate 10. At this time, the cross section of the sample that appears by processing is observed by the CCD camera.

  When the sample 101 is processed by the ion beam B, if the CCD camera is installed outside the vacuum chamber, the lens of the CCD camera will not be contaminated by particles scattered from the sample 101 by ion etching. Therefore, the sample cross section can be favorably observed.

(Those that perform the same or similar operations are denoted by a common reference.)
DESCRIPTION OF SYMBOLS 1 Base 2 1st support member 3 Adjustment pinion gear 4 Rack part 5 Slider plate 6 Adjustment screw 7 1st linear bearing 8 2nd linear bearing 9 2nd support member 10 Shielding plate 11 Support stand 12 Plate spring 13 Heating Heater (heating means)
14 Thermal insulation member 101 Sample B Ion beam

Claims (3)

A sample preparation apparatus for holding a sample in a predetermined position with respect to an ion beam in order to prepare a sample with a cross-section exposed by ion beam irradiation,
A first support member supported on the base end side and having a free end on the front end side;
A second support member having a proximal end supported on the distal end side of the first support member and having the distal end side a free end facing the proximal end side of the first support member;
Heating means attached to the second support member for heating the second support member;
A shielding plate supported by the second support member,
The second support member has a structure that is heated by the heating means and expands toward the proximal end side of the first support member, and on the distal end side of the first support member of the shielding plate. The shielding plate is held with the side edge toward the ion beam being irradiated, and the sample is installed at a position where the ion beam is shielded by the shielding plate to a portion exposed from the side edge of the shielding plate. A sample preparation apparatus characterized in that the processing by the ion beam is performed.   The sample preparation apparatus according to claim 1, wherein the second support member is supported by heat insulation on a distal end side of the first support member. A sample preparation apparatus for holding a sample in a predetermined position with respect to an ion beam in order to prepare a sample with a cross-section exposed by ion beam irradiation,
A first support member supported on the base end side and having a free end on the front end side;
A second support member having a proximal end supported on the distal end side of the first support member and having the distal end side a free end facing the proximal end side of the first support member;
A shielding plate supported by the second support member,
The second support member is structured to be thermally insulated and supported on the distal end side of the first support member, and one side edge of the shielding plate toward the distal end side of the first support member is formed on the ion beam. The shielding plate is held as an irradiation position of the sample, and the ion beam is processed to a portion exposed from one side edge of the shielding plate of the sample placed at a position where the ion beam is shielded by the shielding plate. A sample preparation device characterized in that

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