JP5020836B2 - Shielding material holding mechanism of sample cross-section preparation device - Google Patents

Shielding material holding mechanism of sample cross-section preparation device Download PDF

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JP5020836B2
JP5020836B2 JP2008012448A JP2008012448A JP5020836B2 JP 5020836 B2 JP5020836 B2 JP 5020836B2 JP 2008012448 A JP2008012448 A JP 2008012448A JP 2008012448 A JP2008012448 A JP 2008012448A JP 5020836 B2 JP5020836 B2 JP 5020836B2
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shielding material
ion beam
support member
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JP2009174940A (en
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心尋 小塚
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Jeol Ltd
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Jeol Ltd
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Description

本発明は試料断面作製装置の遮蔽材保持機構に関し、更に詳しくは試料の温度上昇を抑制することができるようにした試料断面作製装置の試料遮蔽機構に関する。   The present invention relates to a shielding material holding mechanism of a sample cross-section preparation apparatus, and more particularly to a sample shielding mechanism of a sample cross-section preparation apparatus capable of suppressing a temperature rise of a sample.

試料の断面画像を撮影するために、試料の断面をエッチング（ミリング）により削るＣＰ（クロスセクション・ポリッシャ：イオンビームによる試料断面作製装置）が知られている。この装置は、遮蔽材を試料の上部に設け、エッチング時に遮蔽材が試料の所定の領域を遮蔽し、試料のエッチング部以外の領域がイオンビームの照射を受けることを防いでいる。   In order to take a cross-sectional image of a sample, a CP (cross-section polisher: sample cross-section preparation apparatus using an ion beam) that cuts a cross-section of a sample by etching (milling) is known. In this apparatus, a shielding material is provided on the upper part of the sample, and the shielding material shields a predetermined region of the sample during etching, and the region other than the etched portion of the sample is prevented from being irradiated with the ion beam.

従来のこの種の装置としては、真空チャンバ内に配置され、試料にイオンビームを照射するためのイオンビーム照射手段と、前記真空チャンバ内に配置され、前記試料を保持する試料ホルダとを備え、前記試料ホルダは、前記イオンビーム照射手段からのイオンビームが進入するイオンビーム進入孔を有して、イオンビームにより試料ホルダがエッチングされないようにした技術が知られている（例えば特許文献１参照）。
特開２００５−７７３５９号公報（段落００１０〜００１７、図３） A conventional apparatus of this type includes an ion beam irradiation means for irradiating a sample with an ion beam, and a sample holder that is disposed in the vacuum chamber and holds the sample. A technique is known in which the sample holder has an ion beam entrance hole into which the ion beam from the ion beam irradiation means enters, and the sample holder is not etched by the ion beam (see, for example, Patent Document 1). .
Japanese Patent Laying-Open No. 2005-77359 (paragraphs 0010 to 0017, FIG. 3)

ＣＰは、試料に遮蔽板を密着させてセットして、試料と遮蔽板に直接イオンビームが照射される。この場合において、熱に弱い試料を発熱させないようにするため、試料と試料に密着した遮蔽板を冷却する必要があるが、試料の加工に関与しない部分にもイオンビームが照射されるため、冷却効率が悪くなり、主に遮蔽板の温度が上昇する。このため、以下に示すような問題が発生する。
１）試料加工位置はイオンビーム下遮蔽材部分と接していることから、遮蔽板輻射熱で試料上が高温となる。
２）遮蔽板冷却は、イオンビーム照射範囲から外れた箇所から熱伝導を利用して冷却しなければならない。
３）試料の冷却もイオンビーム照射範囲から外れた箇所からの熱伝導でないと冷却できない。
４）特に熱伝導の悪い試料の場合、３）に記載の熱伝導により冷却されることから、効果的に冷却できない。 The CP is set with the shielding plate in close contact with the sample, and the sample and the shielding plate are directly irradiated with the ion beam. In this case, it is necessary to cool the sample and the shielding plate that is in close contact with the sample in order to prevent the sample that is sensitive to heat from being heated. The efficiency deteriorates and the temperature of the shielding plate mainly increases. For this reason, the following problems occur.
1) Since the sample processing position is in contact with the shielding material portion under the ion beam, the surface of the sample becomes high temperature due to the radiant heat of the shielding plate.
2) Shield plate cooling must be performed by utilizing heat conduction from a location outside the ion beam irradiation range.
3) The sample cannot be cooled unless it is heat conduction from a location outside the ion beam irradiation range.
4) In particular, in the case of a sample having poor heat conduction, it cannot be effectively cooled because it is cooled by the heat conduction described in 3).

このような理由により、熱に弱い試料の作製が困難であるという問題があった。本発明はこのような課題に鑑みてなされたものであって、試料に熱が伝わらないようにした試料断面作製装置の遮蔽材保持機構を提供することを目的としている。   For these reasons, there is a problem that it is difficult to produce a sample that is vulnerable to heat. The present invention has been made in view of such a problem, and an object of the present invention is to provide a shielding material holding mechanism of a sample cross-section preparation apparatus in which heat is not transmitted to a sample.

（１）請求項１記載の発明は、試料を部分的に覆うように試料に密着して遮蔽材を配置すると共に、前記試料と遮蔽材にイオンビームを照射し、前記遮蔽材の端縁部から露出した試料をイオンビームにより除くことによって試料に断面を形成する試料断面作製装置の遮蔽材保持機構であって、前記イオンビームから前記遮蔽材を遮るための遮蔽ブロックを、前記遮蔽材の上方に間隔を開け、かつ前記遮蔽材の端縁部及び端縁部から露出した試料にイオンビームが照射されるように配置したことを特徴とする。 (1) According to the first aspect of the present invention, the shielding material is disposed in close contact with the sample so as to partially cover the sample, and the sample and the shielding material are irradiated with an ion beam, and the edge portion of the shielding material is provided. A shielding material holding mechanism of a sample cross-section preparation apparatus that forms a cross-section in a sample by removing the sample exposed from the ion beam, wherein a shielding block for shielding the shielding material from the ion beam is provided above the shielding material. And an edge of the shielding material and a sample exposed from the edge of the shielding material are arranged to be irradiated with an ion beam .

（２）請求項２記載の発明は、前記遮蔽材を保持する機構と前記遮蔽ブロックを保持する機構を一体化したことを特徴とする。 (2) According to a second aspect of the invention, characterized in that the mechanism for holding the pre-Symbol shielding material and integrating a mechanism for holding the shielding block.

（３）請求項３記載の発明は、イオンビームにより試料をエッチングして試料観察面を作製するようにした試料作製装置に用いられる遮蔽材保持機構であって、試料表面にイオンビームが照射されることを遮蔽する遮蔽材を用いる遮蔽材保持機構において、試料の上に載置され、試料を直接遮蔽する遮蔽材と、該遮蔽材の上に該遮蔽材を覆うように配置された遮蔽ブロックと、を断熱材を介して一体構造としたことを特徴とする。 (3) The invention described in claim 3 is a shielding material holding mechanism used in a sample preparation apparatus in which a sample observation surface is prepared by etching a sample with an ion beam, and the sample surface is irradiated with the ion beam. in shielding material retaining mechanism using a shielding member to shield the Rukoto is placed on the sample, the shielding material for shielding a sample directly, shielding blocks arranged so as to cover the shielding material on the said shielding member And an integrated structure through a heat insulating material.

（４）請求項４記載の発明は、前記遮蔽材を支持する第１の支持部材と、前記試料を支持する第２の支持部材に冷却伝導用編組線を接続して、前記第１の支持部材と第２の支持部材を冷却手段により冷却するように構成したことを特徴とする。   (4) In the invention according to claim 4, the braided wire for cooling conduction is connected to the first support member that supports the shielding material and the second support member that supports the sample, and the first support The member and the second support member are configured to be cooled by a cooling means.

（１）請求項１記載の発明によれば、イオンビームから遮蔽材を遮るための遮蔽ブロックを、遮蔽材の上方に間隔を開け、かつ遮蔽材の端縁部及び端縁部から露出した試料にイオンビームが照射されるように配置したので、遮蔽材がイオンビームの照射により発熱することがなくなり、試料に熱が伝わらないようにした試料断面作製装置の遮蔽材保持機構を提供することができる。 (1) According to the first aspect of the present invention, the shielding block for shielding the shielding material from the ion beam is spaced above the shielding material and is exposed from the edge portion and the edge portion of the shielding material. in so arranged so that the ion beam is irradiated, the shielding member is no longer able to heat by irradiation of the ion beam, to provide a shielding material retaining mechanism of the sample section prepared apparatus that heat is not transferred to the sample Can do.

（２）請求項２記載の発明によれば、請求項１記載の効果に加えて、遮蔽材を保持する機構と遮蔽ブロックを保持する機構を一体化することで、試料の位置合わせを正確に行なうことができる。 (2) According to the invention of claim 2, in addition to the effect of claim 1, the mechanism for holding the shielding material and the mechanism for holding the shielding block are integrated to accurately align the sample. Can be done.

（３）請求項３記載の発明によれば、試料を遮蔽する遮蔽材と該遮蔽材の上に配置された遮蔽ブロックを断熱材を介して一体構造にすることにより、請求項１記載の効果に加えて、試料の位置合わせを正確に行なうことができる。 (3) according to according to the invention of claim 3, by the integral structure arranged shielded blocks via a heat insulating material on the shield member and the shield member to shield the sample, according to claim 1 effect described In addition, the sample can be accurately aligned.

（４）請求項４記載の発明によれば、遮蔽材を支持する第１の支持部材と試料を保持する第２の支持部材を冷却することで、試料が加熱されることがなくなり、温度に弱い試料も加工することができるようになる。   (4) According to the invention described in claim 4, by cooling the first support member that supports the shielding material and the second support member that holds the sample, the sample is not heated, and the temperature is increased. Even weak samples can be processed.

以下、図面を参照して本発明の実施の形態を詳細に説明する。
（実施の形態１）
図１は本発明の第１の実施の形態を示す構成図である。図において、ＩＢはイオン源（図示せず）から出射されるイオンビームで、Ａはその照射領域を示している。１は試料、２は該試料１を支持する試料支持部材である。３は試料１の上に載置され、試料１を直接遮蔽する遮蔽板、４は該遮蔽板３を支持する遮蔽板支持部材である。５は遮蔽板３の上に該遮蔽板３を覆うように配置された遮蔽ブロック、６は該遮蔽ブロック５を支持する遮蔽ブロック支持部材である。試料支持部材２としては例えばモリブデンが使用され、遮蔽板支持部材４，遮蔽ブロック支持部材６としては例えばアルミニウムが使用される。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
(Embodiment 1)
FIG. 1 is a block diagram showing a first embodiment of the present invention. In the figure, IB is an ion beam emitted from an ion source (not shown), and A indicates the irradiation region. Reference numeral 1 is a sample, and 2 is a sample support member for supporting the sample 1. A shielding plate 3 is placed on the sample 1 and directly shields the sample 1, and a shielding plate support member 4 supports the shielding plate 3. A shielding block 5 is arranged on the shielding plate 3 so as to cover the shielding plate 3, and a shielding block support member 6 supports the shielding block 5. For example, molybdenum is used as the sample support member 2, and aluminum is used as the shielding plate support member 4 and the shielding block support member 6.

Ｂは遮蔽板３の上に遮蔽ブロック５が配置されることによって、遮蔽板３の上に形成される影である。遮蔽ブロック５が無ければ、この部分もイオンビームＩＢの照射を受けることになる。７は試料支持部材２と接続される冷却伝導用編組線、８は遮蔽板支持部材４と接続される冷却伝導用編組線である。これら冷却伝導用編組線７，８は他端が冷却装置（図示せず）に接続され、−１６０℃から−１８０℃程度の冷却部と接続される。このような低温を試料支持部材２と遮蔽板支持部材４に伝達してこれら部材を冷却するため、冷却伝導用編組線７，８の材料としては熱伝導率のよいもの、例えば銅線が用いられる。このように構成された機構の動作を以下に説明する。   B is a shadow formed on the shielding plate 3 by arranging the shielding block 5 on the shielding plate 3. If the shielding block 5 is not present, this portion is also irradiated with the ion beam IB. 7 is a braided wire for cooling conduction connected to the sample support member 2, and 8 is a braided wire for cooling conduction connected to the shielding plate support member 4. The other ends of these braided wires 7 and 8 for cooling conduction are connected to a cooling device (not shown) and connected to a cooling unit of about -160 ° C to -180 ° C. In order to cool these members by transmitting such a low temperature to the sample support member 2 and the shielding plate support member 4, a material having good thermal conductivity, such as a copper wire, is used as the material for the cooling conduction braided wires 7, 8. It is done. The operation of the mechanism configured as described above will be described below.

先ず、試料１の上に直接遮蔽板３を乗せているので、遮蔽板３で覆われている部分の試料にはイオンビームＩＢが照射されることはない。このままだと遮蔽板３が熱を持つので、該遮蔽板３の上に更に遮蔽ブロック５を配置している。この結果、Ｂに示す領域は遮蔽板３にイオンビームＩＢが照射されることはない。従って、遮蔽板３に照射されるイオンビームＩＢの量は大幅に少なくなる。   First, since the shielding plate 3 is placed directly on the sample 1, the portion of the sample covered with the shielding plate 3 is not irradiated with the ion beam IB. If the shield plate 3 still has heat, the shield block 5 is further disposed on the shield plate 3. As a result, the ion beam IB is not irradiated on the shielding plate 3 in the region indicated by B. Therefore, the amount of the ion beam IB irradiated to the shielding plate 3 is greatly reduced.

それでも遮蔽板３にはイオンビームＩＢが照射される領域があるので、該遮蔽板３は発熱する。この発熱は、遮蔽板３を支持する遮蔽板支持部材４を冷却伝導用編組線８により冷却されていることから、遮蔽板３は冷却され、発熱を抑えることができる。一方、試料支持部材２にも冷却伝導用編組線７が接続され、試料１を冷却している。従って、温度に弱い試料であっても熱のために変形することがなくなる。   Nevertheless, since the shielding plate 3 has a region irradiated with the ion beam IB, the shielding plate 3 generates heat. This heat generation is because the shielding plate support member 4 supporting the shielding plate 3 is cooled by the braided wire 8 for cooling conduction, the shielding plate 3 is cooled, and the heat generation can be suppressed. On the other hand, the cooling support braided wire 7 is also connected to the sample support member 2 to cool the sample 1. Therefore, even a sample that is weak in temperature is not deformed due to heat.

このように第１の実施の形態によれば、遮蔽板の上にこれを覆う遮蔽ブロックを設けたので、遮蔽板がイオンビームの照射により発熱することがなくなり、試料に熱が伝わらないようにした試料断面作製装置の遮蔽材保持機構を提供することができる。更に、遮蔽板３を支持する第１の支持部材４と試料１を保持する第２の支持部材２を冷却することで、試料１が加熱されることがなくなり、温度に弱い試料も正確に加工することができるようになる。
（実施の形態２）
図２は本発明の第２の実施の形態を示す構成図である。図１と同一のものは、同一の符号を付して示す。図に示す実施の形態は、図１に示す遮蔽板支持部材４と遮蔽ブロック支持部材６を一体化したものである。図において、１０は遮蔽ブロック・遮蔽板支持部材である。該遮蔽ブロック・遮蔽板支持部材１０には、断熱材９を介して遮蔽板支持部材４が取り付けられ、一体構造となっている。従って、遮蔽ブロック・遮蔽板支持部材１０は、遮蔽ブロック５に加えて遮蔽板３を支持することになる。その他の構成は、図１に示す実施の形態と同じなので、説明は省略する。このように構成された機構の動作を説明すれば、以下の通りである。 As described above, according to the first embodiment, since the shielding block covering the shielding plate is provided, the shielding plate does not generate heat due to the irradiation of the ion beam, so that heat is not transmitted to the sample. It is possible to provide a shielding material holding mechanism of the sample cross-section manufacturing apparatus. Furthermore, by cooling the first support member 4 that supports the shielding plate 3 and the second support member 2 that holds the sample 1, the sample 1 is not heated, and a sample that is weak in temperature is processed accurately. Will be able to.
(Embodiment 2)
FIG. 2 is a block diagram showing a second embodiment of the present invention. The same components as those in FIG. 1 are denoted by the same reference numerals. In the embodiment shown in the figure, the shielding plate support member 4 and the shielding block support member 6 shown in FIG. 1 are integrated. In the figure, reference numeral 10 denotes a shielding block / shielding plate support member. A shielding plate support member 4 is attached to the shielding block / shielding plate support member 10 via a heat insulating material 9 to form an integral structure. Therefore, the shielding block / shielding plate support member 10 supports the shielding plate 3 in addition to the shielding block 5. Other configurations are the same as those of the embodiment shown in FIG. The operation of the mechanism configured as described above will be described as follows.

遮蔽ブロック・遮蔽板支持部材１０は図の矢印方向に移動可能に構成されている。従って、該遮蔽ブロック・遮蔽板支持部材１０を矢印方向に移動させると、遮蔽板支持部材４もそれと同期して同一方向に移動する。従って、この発明によれば、遮蔽ブロック・遮蔽板支持部材１０を移動させることによって、試料１のエッチング部分を１μｍのオーダで位置決めすることができる。即ち、試料１の位置合わせを正確に行なうことができる。   The shielding block / shielding plate support member 10 is configured to be movable in the direction of the arrow in the figure. Therefore, when the shielding block / shielding plate support member 10 is moved in the direction of the arrow, the shielding plate support member 4 is also moved in the same direction in synchronization therewith. Therefore, according to the present invention, the etched portion of the sample 1 can be positioned on the order of 1 μm by moving the shielding block / shielding plate support member 10. That is, the sample 1 can be accurately aligned.

また、試料１の遮蔽に関しては、遮蔽板３で試料１を直接遮蔽し、更にその上を遮蔽ブロック５で覆うことにより、遮蔽板３にイオンビームＩＢが直接照射されることが少なくなるので、遮蔽板３が発熱するのを防ぐことができる。更に、試料支持部材２と遮蔽板支持部材４を冷却伝導用編組線７，８で冷却することにより、試料の温度上昇を極めて効果的に抑制することができる。従って、温度に弱い試料も正確に加工することができるようになる。
（実施の形態３）
図３は本発明の第３の実施の形態を示す構成図である。図１と同一のものは、同一の符号を付して示す。図に示す実施の形態は、図１に示す遮蔽板３と遮蔽ブロック５を断熱材１５を介して一体化したものである。図において、１５は遮蔽板３と遮蔽ブロック５間をつなぐ断熱材である。該断熱材１５としては既存の断熱材料を用いることができる。この実施の形態では、遮蔽板３と遮蔽ブロック５とが断熱材１５を介して一体構造となっている。その他の構成は、図１に示す実施の形態と同じなので、説明は省略する。このように構成された機構の動作を説明すれば、以下の通りである。 Further, regarding the shielding of the sample 1, by directly shielding the sample 1 with the shielding plate 3, and further covering the sample 1 with the shielding block 5, it is less likely that the ion beam IB is directly irradiated to the shielding plate 3. It is possible to prevent the shield plate 3 from generating heat. Furthermore, by cooling the sample support member 2 and the shielding plate support member 4 with the cooling conduction braided wires 7 and 8, the temperature rise of the sample can be extremely effectively suppressed. Therefore, it is possible to accurately process a sample that is weak in temperature.
(Embodiment 3)
FIG. 3 is a block diagram showing a third embodiment of the present invention. The same components as those in FIG. 1 are denoted by the same reference numerals. In the embodiment shown in the figure, the shielding plate 3 and the shielding block 5 shown in FIG. 1 are integrated via a heat insulating material 15. In the figure, reference numeral 15 denotes a heat insulating material that connects between the shielding plate 3 and the shielding block 5. As the heat insulating material 15, an existing heat insulating material can be used. In this embodiment, the shielding plate 3 and the shielding block 5 have an integral structure with a heat insulating material 15 interposed therebetween. Other configurations are the same as those of the embodiment shown in FIG. The operation of the mechanism configured as described above will be described as follows.

遮蔽板支持部材４は図の矢印方向に移動可能に構成されている。従って、該遮蔽板支持部材４を矢印方向に移動させると、遮蔽ブロック５もそれと同期して同一方向に移動する。従って、この発明によれば、遮蔽板支持部材４を移動させることによって、試料１のエッチング部分を１μｍのオーダで位置決めすることができる。即ち、試料１の位置合わせを正確に行なうことができる。   The shielding plate support member 4 is configured to be movable in the direction of the arrow in the figure. Therefore, when the shielding plate support member 4 is moved in the direction of the arrow, the shielding block 5 is also moved in the same direction in synchronization therewith. Therefore, according to the present invention, the etched portion of the sample 1 can be positioned on the order of 1 μm by moving the shielding plate support member 4. That is, the sample 1 can be accurately aligned.

また、試料１の遮蔽に関しては、遮蔽板３で試料１を直接遮蔽し、更にその上を遮蔽ブロック５で覆うことにより、遮蔽板３にイオンビームＩＢが直接照射されることが少なくなるので、遮蔽板３が発熱するのを防ぐことができる。更に、試料支持部材２と遮蔽板支持部材４を冷却伝導用編組線７，８で冷却することにより、試料の温度上昇を極めて効果的に抑制することができる。従って、温度に弱い試料も正確に加工することができるようになる。   Further, regarding the shielding of the sample 1, by directly shielding the sample 1 with the shielding plate 3, and further covering the sample 1 with the shielding block 5, it is less likely that the ion beam IB is directly irradiated to the shielding plate 3. It is possible to prevent the shield plate 3 from generating heat. Furthermore, by cooling the sample support member 2 and the shielding plate support member 4 with the cooling conduction braided wires 7 and 8, the temperature rise of the sample can be extremely effectively suppressed. Therefore, it is possible to accurately process a sample that is weak in temperature.

以上、詳細に説明したように、本発明によれば試料に熱が伝わらないようにした試料断面作製装置の遮蔽材保持機構を提供することができる。   As described above in detail, according to the present invention, it is possible to provide a shielding material holding mechanism of a sample cross-section preparation apparatus that prevents heat from being transmitted to a sample.

本発明の第１の実施の形態を示す構成図である。It is a block diagram which shows the 1st Embodiment of this invention. 本発明の第２の実施の形態を示す構成図である。It is a block diagram which shows the 2nd Embodiment of this invention. 本発明の第３の実施の形態を示す構成図である。It is a block diagram which shows the 3rd Embodiment of this invention.

符号の説明Explanation of symbols

１ 試料
２ 試料支持部材
３ 遮蔽板
４ 遮蔽板支持部材
５ 遮蔽ブロック
６ 遮蔽ブロック支持部材
７ 冷却伝導用編組線
８ 冷却伝導用編組線
９ 断熱材
１０ 遮蔽ブロック・遮蔽板支持部材
１５ 断熱材 DESCRIPTION OF SYMBOLS 1 Sample 2 Sample support member 3 Shielding plate 4 Shielding plate support member 5 Shielding block 6 Shielding block support member 7 Braided wire for cooling conduction 8 Braided wire for cooling conduction 9 Heat insulating material 10 Shielding block / shielding plate supporting member 15 Heat insulating material

Claims (4)

試料を部分的に覆うように試料に密着して遮蔽材を配置すると共に、前記試料と遮蔽材にイオンビームを照射し、前記遮蔽材の端縁部から露出した試料をイオンビームにより除くことによって試料に断面を形成する試料断面作製装置の遮蔽材保持機構であって、
前記イオンビームから前記遮蔽材を遮るための遮蔽ブロックを、前記遮蔽材の上方に間隔を開け、かつ前記遮蔽材の端縁部及び端縁部から露出した試料にイオンビームが照射されるように配置したことを特徴とする試料断面作製装置の遮蔽材保持機構。 By placing a shielding material in close contact with the sample so as to partially cover the sample, irradiating the sample and the shielding material with an ion beam , and removing the sample exposed from the edge of the shielding material by the ion beam A shielding material holding mechanism of a sample cross-section preparation apparatus that forms a cross section in a sample ,
A shielding block for shielding the shielding material from the ion beam is spaced above the shielding material, and an edge of the shielding material and a sample exposed from the edge are irradiated with the ion beam. A shielding material holding mechanism of a sample cross-section preparation apparatus, characterized in that it is arranged . 前記遮蔽材を保持する機構と前記遮蔽ブロックを保持する機構を一体化したことを特徴とする請求項１記載の試料断面作製装置の遮蔽材保持機構。 Shielding material retaining mechanism of the sample section preparation apparatus according to claim 1, characterized in that integrated mechanism for holding the mechanism and the shielding block for holding a pre-Symbol shielding material. イオンビームにより試料をエッチングして試料観察面を作製するようにした試料作製装置に用いられる遮蔽材保持機構であって、試料表面にイオンビームが照射されることを遮蔽する遮蔽材を用いる遮蔽材保持機構において、
試料の上に載置され、試料を直接遮蔽する遮蔽材と、該遮蔽材の上に該遮蔽材を覆うように配置された遮蔽ブロックと、を断熱材を介して一体構造としたことを特徴とする試料断面作製装置の遮蔽材保持機構。 A shielding material holding mechanism used in a sample preparation apparatus in which a sample observation surface is prepared by etching a sample with an ion beam, the shielding material using a shielding material that shields the sample surface from being irradiated with an ion beam In the holding mechanism,
Characterized placed on the sample, the shielding material for shielding a sample directly, a shielding block is disposed so as to cover the shielding material on the said shielding material, that was an integral structure through a heat-insulating material The shielding material holding mechanism of the sample cross-section preparation apparatus. 前記遮蔽材を支持する第１の支持部材と、前記試料を支持する第２の支持部材に冷却伝導用編組線を接続して、前記第１の支持部材と第２の支持部材を冷却手段により冷却するように構成したことを特徴とする請求項１乃至３の何れかに記載の試料断面作製装置の遮蔽材保持機構。   A braided wire for cooling conduction is connected to a first support member that supports the shielding material and a second support member that supports the sample, and the first support member and the second support member are connected by a cooling unit. The shielding material holding mechanism of the sample cross-section preparation apparatus according to any one of claims 1 to 3, wherein the shielding material holding mechanism is configured to be cooled.
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