JP2010166015A - Method of forming circuit pattern, transistor element substrate and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a formation method of a circuit pattern which can easily align a wettability control pattern and an ink-jet printing pattern with high precision, a transistor element substrate and a display device. <P>SOLUTION: The method of forming the circuit pattern includes: a steps of forming alignment marks M arranged with high surface energy lines L1-L5 on a wettability-varying layer at pitches q; a printing test step of performing the test printing of dot lines D1-D5 at a printing pitch p different from the pitch q by an ink-jet method from a printing starting position temporarily set so that a centerline of a target impact area of a dot line D3 is coincident with a centerline of a high surface energy line L3; a detection step of detecting such a position in a line array of the high surface energy lines that the respective centerlines are almost coincident with the dot lines based on the projecting state of an ink from the high surface energy lines for each test printing line; and a printing position adjustment step of adjusting a printing starting position based on the detection result. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a technique for forming a wiring pattern on a substrate by printing. In particular, the pattern of surface energy and the inkjet method when forming a wiring pattern by forming a pattern with different surface energy with a wettability changing material and applying the ink of the conductive material to the high surface energy region using the inkjet method. This is a technique related to alignment with a printing pattern.

  As a wiring formation technique, a photolithography method is widely used, but in recent years, a method using printing has been developed. The printing method is superior to the photolithography method in that it does not require a large facility such as a vacuum film forming apparatus, has a small number of processes, and has high material use efficiency. However, the printing method has problems such as wetting and spreading of ink and the occurrence of liquid pool, and is difficult in terms of pattern quality compared to the photolithography method.

  In order to solve these problems, a technique has been disclosed in which banks are formed in advance on a substrate and ink is supplied to grooves between the banks to prevent ink from spreading and improve pattern quality (Patent Literature). 1). However, this technique has a problem that it has to go through many steps such as a HMDS (hexamethyl gin lazan) processing step, a bank forming step by a photolithography method or a printing method, a HMDS patterning step, and a residue processing step. In particular, when the bank forming process is performed by a photolithography process having a large number of processes in order to form a precise pattern, the total number of processes is further increased.

  As a technique for solving these problems, the present inventors have disclosed a method of forming a wettability changing layer including a wettability changing material whose surface energy is changed by applying energy on a substrate (Patent Document 2). Although details will be described later, a high surface energy region that easily wets ink and a low surface energy region that hardly wets ink by forming a material whose surface energy changes by applying surface energy to the substrate surface and selectively applying energy. And the wiring is formed by supplying ink of a conductive material to the high surface energy region. According to this method, it is possible to form a fine pattern with a small number of steps.

  In the techniques described in Patent Document 1 and Patent Document 2, electrodes are formed by supplying ink of a conductive material to a groove or a high surface energy region formed on a substrate, and an ink jet method is used as an ink supply means. Used. At this time, it is necessary to apply ink in accordance with the groove or high surface energy region formed on the substrate. However, in the case of Patent Document 1, since the portion where the wiring pattern is formed is formed by the bank, the ink is used. It is possible to visually recognize the place where the ink is supplied with a microscope or a camera, and alignment between the groove on the substrate, ink jet printing, and the bank is easy.

  Also, although the materials used are different, the technique described in Patent Document 3 is also a technique for adjusting the alignment between the pixel formed on the substrate and the ink supplied to the pixel by the inkjet method, and is outside the effective area of the color filter. Ink is applied to the pixel by an ink jet method, and the amount of deviation between the pixel and the ink droplet is measured to correct the alignment, thereby aligning the pixel and the ink. That is, as shown in FIG. 1, the ink (222 to 224) is supplied to the black matrix 200 (pixel) by an ink jet method, and the positions of the landed inks 222 to 224 and the positions of the black matrix 200 are measured to adjust the alignment. Then, actual printing is performed on the effective area. Since both the pixel and the ink can be visually recognized with a microscope or a camera, the distance measurement between the pixel and the ink is easy.

  On the other hand, in the case of the technique described in Patent Document 2, regions having different surface energies formed on the surface of the substrate have almost no difference in reflectance and form, so that it is generally very difficult to visually recognize them with a microscope or a camera. For this reason, it is difficult to align the inkjet printing pattern directly with patterns having different surface energies on the substrate in the case of wiring formation utilizing wettability control. Therefore, in the past, a mark that can be visually recognized was provided on the substrate prior to the process, and both the high surface energy region and the low surface energy region and ink jet printing were performed based on the visually recognizable mark. Since the printing position alignment cannot be directly adjusted to the surface energy pattern, the alignment accuracy is lowered.

  The present invention has been made in view of the above-described problems in the prior art. When supplying wiring pattern ink (ink of a conductive material) to the wettability control pattern by the inkjet method, the wettability control pattern and the inkjet are provided. Provided is a method for forming a wiring pattern that easily aligns with a printed pattern with high accuracy, and further provides a transistor element substrate having a wiring pattern formed by the wiring pattern forming method and a display device using the transistor element. For the purpose.

The present invention provided to solve the above problems is as follows.
[1] A wettability changing layer (wetting change layer 2) having a high surface energy region (high surface energy portion 3) and a low surface energy region (low surface energy portion 4) formed on the surface as a wiring pattern. A wiring pattern forming method for forming a wiring pattern by discharging a droplet of wiring ink from a head (inkjet head 103) having a discharge nozzle to a substrate having a substrate (substrate 7). Lines (high surface energy lines L1 to L5, La to Li) made of the high surface energy region having a width corresponding to the landing width of the droplets (droplet d) discharged from the discharge nozzle are at a pitch q at a constant interval. A step of forming alignment marks (alignment marks M and N) arranged in a stripe shape (FIGS. 13A and 17A), and the alignment marker When discharging from the discharge nozzle so as to form a plurality of dot lines (dot lines D1 to D5, Da to Di) at a printing pitch p different from the pitch q with respect to the mark, the plurality of dot lines From the temporarily set print start position so that the center line of the target landing point of the predetermined dot line coincides with the center line of the predetermined line of the alignment mark (FIGS. 13B and 17B). Based on each of the plurality of dot lines, a test printing step of scanning the head and / or the substrate and discharging the droplets of the wiring ink from the discharge nozzles to the alignment marks to print the plurality of dot lines. From the state where the wiring ink protrudes from the line of the alignment mark for each printing line, the dot lines and the center lines of the printing lines substantially coincide with each other. Based on the detection step (FIGS. 13C and 17C) for identifying the alignment mark line and detecting the position of the line in the line arrangement, the print start position is adjusted based on the detection result. A wiring pattern forming method comprising: a printing position adjusting step; and a patterning step of printing a wiring pattern on the wettability changing layer by the head from the adjusted printing start position (FIGS. 2, FIGS. 11 to 19).
[2] In the detection step, the line of the alignment mark in which the center line of the dot line and the mutual center line substantially coincide is specified from the print line in which the wiring ink does not protrude from the line of the alignment mark. ] The formation method of the wiring pattern as described in FIG. 13 (FIG. 13).
[3] In the detection step, the center line of the dot line substantially coincides with whether or not the protruding portion of the wiring ink from the alignment mark line in the printing line is in contact with the adjacent printing line. The method for forming a wiring pattern according to [1], wherein a line of the alignment mark to be specified is specified (FIG. 17).
[4] From the presence / absence of electrical continuity between adjacent print lines, it is determined whether the protruding portion of the wiring ink from the alignment mark line in the print line is in contact with the adjacent print line. [3] The method for forming a wiring pattern according to [3].
[5] The above [3] or [4] satisfying the relationship of the following formula (I) where w is the line width of the alignment mark and a is the landing droplet diameter of the wiring ink constituting the dot line: A method for forming a wiring pattern as described in 1.
q-w <a <2q-w (I)
[6] The wiring pattern forming method according to any one of [1] to [5], wherein the surface energy of the low surface energy region is 30 mN / m or more.
[7] The wiring pattern forming method according to any one of [1] to [6], wherein the plurality of alignment marks are formed on the wettability changing layer.
[8] A transistor element substrate having a wiring pattern formed by the method for forming a wiring pattern according to any one of [1] to [7] (FIG. 20).
[9] A display device using the transistor element substrate according to [8] (FIG. 21).

  According to the present invention, since the alignment between the wettability control pattern and the inkjet print pattern can be visually recognized as a test print result on the alignment mark, the alignment between the wettability control pattern and the inkjet print pattern can be easily performed with high accuracy. Therefore, an appropriate wiring pattern can be formed.

It is a figure explaining the technique which adjusts the alignment of the ink supplied to a pixel by the inkjet method. It is a cross-sectional schematic diagram which shows the example of a fundamental structure of a laminated structure. It is a cross-sectional schematic diagram which shows the structural example (1) of a wettability change layer. It is a cross-sectional schematic diagram which shows the structural example (2) of a wettability change layer. It is a cross-sectional schematic diagram which shows the structural example (3) of a wettability change layer. It is a plane schematic diagram which shows the structural example (1) of the wettability change layer surface. It is a plane schematic diagram which shows the structural example (2) of the wettability change layer surface. It is a plane schematic diagram which shows the structural example (3) of the wettability change layer surface. It is a conceptual diagram which shows the polymer material example which has a hydrophobic group in a side chain. It is a figure explaining the wettability of the liquid with respect to the solid surface. It is process drawing which shows the manufacturing process of a laminated structure. It is a perspective view which shows the structure of the inkjet apparatus used by this invention. It is the schematic which shows the relationship between the alignment mark and dot line in 1st Embodiment of the formation method of the wiring pattern which concerns on this invention. It is the schematic which shows the example of the state of the printing area | region in an alignment mark. It is the schematic which shows the example of a pattern of the alignment mark used by this invention. It is the schematic which shows another example of a pattern of the alignment mark used by this invention. It is the schematic which shows the relationship between the alignment mark and dot line in 2nd Embodiment of the formation method of the wiring pattern which concerns on this invention. It is the schematic which shows the relationship between the part which protruded from the high surface energy line of the droplet of the ink for wiring, and the adjacent high surface energy line. It is the schematic which shows the inkjet dot pattern example in an alignment mark. It is the schematic which shows the structural example of the transistor element substrate which concerns on this invention. It is the schematic which shows the structural example of the display apparatus which concerns on this invention.

First, the structural example of the laminated structure used as the manufacturing object of this invention is demonstrated.
FIG. 2 is a schematic cross-sectional view showing an example of the basic configuration of the laminated structure 1 of the present embodiment. The laminated structure 1 of the present embodiment is configured based on, for example, a wettability changing layer 2 formed on a substrate (not shown). Here, the wettability changing layer 2 is a layer made of a material whose critical surface tension changes with the application of energy. In the present embodiment, the wettability changing layer 2 has at least two parts having different critical surface tensions. It has a large high surface energy part 3 and a low surface energy part 4 with a smaller critical surface tension. Here, a gap between two high surface energy portions 3 in the illustrated example is set to a minute gap of about 1 to 5 μm, for example. In addition, conductive layers 5 are formed at portions of the high surface energy portion 3 with respect to the wettability changing layer 2. Further, if necessary, the semiconductor layer 6 is provided so as to be in contact with at least the low surface energy portion 4 with respect to the wettability changing layer 2.

  Here, the wettability changing layer 2 may be made of a single material or may be made of two or more kinds of materials. In the case of being composed of two or more materials, specifically, by mixing a material having a greater wettability change with a material having a greater electrical insulation property, the electrical insulation is excellent and the wettability change is also achieved. It is possible to provide an excellent wettability changing layer 2. When the wiring pattern is already formed on the substrate and another wiring pattern is formed on the insulating layer via the insulating layer, the wettability changing layer 2 having excellent electrical insulation is effective. In this case, the wettability changing layer 2 can serve as an insulating layer as it is without providing an insulating layer separately. In particular, when the wettability changing layer 2 is used as a gate insulating film layer of a thin film transistor (TFT), high electrical insulation is important.

  In addition, since it is possible to use a material that has a large change in wettability but has a problem in film formability, more materials can be selected. Specifically, when one material has a greater change in wettability but has a high cohesive force and is difficult to form a film, this material should be mixed with the other material with good film formability. Thus, the wettability changing layer 2 can be easily manufactured.

  A schematic cross-sectional view of the wettability changing layer 2 is shown in FIG. For example, a layer made of the second material 72 having a better wettability change than the first material 71 is formed on the layer made of the first material 71 having a higher electrical insulation than the second material 72. The structure is clearly separated and stacked.

  Such a structure can be produced by sequentially laminating a layer made of the second material 72 after producing a layer made of the first material 71. As a manufacturing method, a vacuum process such as vacuum vapor deposition can be used, or a coating process using a solvent can be used.

  Moreover, it is also possible to manufacture by applying a solution obtained by mixing the first material 71 and the second material 72 to the substrate and drying it. When the polarity of the second material 72 is relatively small or when the molecular weight is relatively small, the second material 72 moves to the surface side and forms a layer before the solvent evaporates during drying. To do. When the coating process is used, the layer made of the first material 71 and the layer made of the second material 72 are often not clearly separated by the interface, as shown in the schematic cross-sectional view of FIG.

  The first / second composition ratio of the first material 71 having relatively high electrical insulation and the second material 72 having relatively large wettability change is 50/50 to 99/1 in weight ratio. It becomes. As the weight ratio of the second material 72 increases, the electrical insulating property of the wettability changing layer 2 becomes low and becomes unsuitable as an insulating layer of an electronic element. On the other hand, when the weight ratio of the first material 71 is increased, the wettability change is reduced, so that the patterning of the conductive layer is not good. Therefore, the mixing ratio between the two is desirably 60/40 to 95/5, and more desirably 70/30 to 90/10.

  As shown in the schematic cross-sectional view of FIG. 4, the layer made of the first material 71 and the layer made of the second material 72 may not be clearly separated by the interface. Further, as shown in FIG. 4 or FIG. 5, the first and second materials 71 and 72 may be mixed with a predetermined concentration distribution in the film thickness direction.

  When the wettability changing layer 2 is composed of two or more kinds of materials, it may have a laminated structure of two or more layers, and has a predetermined concentration distribution in the film thickness direction without having a layer structure. Materials may be mixed.

  As shown in the schematic plan view of FIG. 6, the wettability changing layer surface 2a on the side not in contact with the substrate desirably has a surface in which the second material 72 is uniformly dispersed. However, if fine patterning is possible, a state in which the first material 71 is dispersed while the second material 72 is uniformly dispersed as shown in the schematic plan view of FIG. As shown in the schematic diagram, the layers may be separated to form a so-called sea-island structure. The sea-island structure can be observed using an optical microscope, micro-infrared, Raman spectroscopy, or the like. In particular, if the island structure has a diameter of about 5 μm, the material component is determined by micro-infrared spectroscopy. It is also possible to specify.

  The wettability changing layer 2 is desirably made of a polymer material having a hydrophobic group in the side chain. Specifically, as shown in the conceptual diagram of FIG. 9, the side chain R having a hydrophobic group directly or via a bonding group (not shown) on the main chain L having a skeleton such as polyimide or (meth) acrylate. Can be mentioned.

Examples of the hydrophobic group include —CH ₂ CH ₃ , —CH (CH ₃ ) ₂ , —C (CH ₃ ) ₃ , —CF ₂ CH ₃ , —CF ₂ CF ₃ , —CF (CF ₃ ) ₂ , —C Examples thereof include groups having a terminal structure such as (CF ₃ ) ₃ , —CF ₂ H, —CFH _{2 and the} like. Also in this case, in order to facilitate the orientation of molecular chains, a group having a long carbon chain length is preferable, and a group having 4 or more carbon atoms is more preferable. The alkyl group may contain a halogen group, a cyano group, a phenyl group, a hydroxyl group, a carboxyl group, or a phenyl group substituted with a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms or an alkoxy group. Good. It is considered that the more R binding sites, the lower the surface energy (the smaller the critical surface tension) and the more lyophobic. Due to ultraviolet irradiation or the like, a part of the bond is broken, so that the critical surface tension increases and the liquid becomes lyophilic. In addition to this, examples of the hydrophobic group include an organosilicon group that can be represented by —SiR ₃ . Here, R is an organic group containing a siloxane bond.

Here, in the characteristic laminated structure 1 of the present embodiment, the semiconductor layer 6 is in contact with the low surface energy part 4 of the wettability changing layer 2, so that the physical properties of the part influence the characteristics of the semiconductor layer 6. It is thought to give. In this case, it is desirable that the critical surface tension (γ _C ) of the low surface energy portion 4 of the wettability changing layer 2 is 40 mN / m or less.

  In consideration of forming the semiconductor layer 6 on the wettability changing layer 2, the polymer material having a hydrophobic group in the side chain preferably includes polyimide. Since polyimide is excellent in solvent resistance and heat resistance, when the semiconductor layer 6 is formed on the wettability changing layer 2, it does not swell or crack due to temperature changes caused by the solvent or baking. .

  When the wettability changing layer 2 is composed of two or more types of materials, considering the heat resistance, solvent resistance, and affinity, materials other than the polymer material having a hydrophobic group in the side chain are also made of polyimide. It is desirable to become.

By the way, the hydrophobic group defines the surface tension of the low surface energy region. However, as described later, in the method of forming a wiring pattern according to the present invention, if the low surface energy region repels ink too much, it protrudes from the high surface energy region. Since measurement is not possible, a material that does not have too low surface free energy in the low surface energy region is desirable.
The surface energy in the low surface energy region is desirably 30 mN / m or more.

  The hydrophobic group of the polyimide having a hydrophobic group in the side chain used in the present embodiment can have any of the structures represented by the following chemical formulas (1) to (5), for example.

In the chemical formula of formula (1), X is —CH ₂ — or CH ₂ CH ₂ —, and A ¹ is 1,4-cyclohexylene, 1,4-phenylene or 1 substituted with 1 to 4 fluorines. , 4-phenylene, wherein A ² , A ³ and A ⁴ are each independently a single bond, 1,4-cyclohexylene, 1,4-phenylene or 1,4-fluorine substituted 1,4-fluorine Phenylene, B ¹ , B ² and B ³ are each independently a single bond or CH ₂ CH ₂ —, B ⁴ is alkylene having 1 to 10 carbon atoms, and R ³ , R ⁴ , R ⁵ , R ⁶ , and R ⁷ are each independently alkyl having 1 to 10 carbon atoms, and p is an integer of 1 or more.

  In the chemical formula of the formula (2), T, U and V are each independently a benzene ring or a cyclohexane ring, and any H on these rings is alkyl having 1 to 3 carbon atoms, fluorine having 1 to 3 carbon atoms. Optionally substituted with substituted alkyl, F, Cl or CN, m and n are each independently an integer from 0 to 2, h is an integer from 0 to 5, and R is H, F, Cl, CN or a monovalent organic group, and two U's when m is 2 or two V's when n is 2 may be the same or different.

In the chemical formula of formula (3), the linking group Z is CH ₂ , CFH, CF ₂ , CH ₂ CH ₂ or CF ₂ O, and the ring Y is 1,4-cyclohexylene or 1 to 4 H are F Or 1,4-phenylene which may be replaced by CH ₃ , wherein A ^{1 to} A ³ are each independently a single bond, 1,4-cyclohexylene or 1 to 4 H are F or CH ₃ 1,4-phenylene which may be substituted, and B ^{1 to} B ³ are each independently a single bond, an alkylene having 1 to 4 carbon atoms, an oxygen atom, an oxyalkylene having 1 to 3 carbon atoms, or 1 to 1 carbon atoms. 3 is alkyleneoxy, R is H, alkyl having 1 to 10 carbon atoms in which arbitrary CH ₂ may be replaced with CF ₂ , or 1 carbon atom in which one CH ₂ may be replaced with CF ₂ ~ 9 alkoxy or alkoxyalkyl Binding position of the amino group to the benzene ring is arbitrary position. However, when Z is CH ₂ , all of B ^{1 to} B ³ are not simultaneously alkylene having 1 to 4 carbon atoms, Z is CH ₂ CH ₂ , and ring Y is 1, 4 When -phenylene, both A ¹ and A ² are not a single bond, and when Z is CF ₂ O, ring Y is 1,4-cyclohexylene. Absent.

In the chemical formula of formula (4), R 2 is a hydrogen atom or an alkyl group having 1 to 12 carbon atoms, Z ₁ is a CH ₂ group, m is 0 to 2, and ring A is a benzene ring or a cyclohexane ring. Yes, 1 is 0 or 1, each Y ₁ is independently an oxygen atom or a CH ₂ group, and each n ₁ is independently 0 or 1.

In the chemical formula of the formula (5), each Y ₂ is independently an oxygen atom or a CH ₂ group, R 3 and R 4 are independently a hydrogen atom, an alkyl group having 1 to 12 carbon atoms or a perfluoroalkyl group, and at least one of them Is an alkyl group having 3 or more carbon atoms or a perfluoroalkyl group, and each n ₂ is independently 0 or 1.

  Details of these materials are described in detail in JP-A No. 2002-162630, JP-A No. 2003-96034, JP-A No. 2003-267982, JP-A No. 2004-86184, and the like. For the tetracarboxylic dianhydride constituting the main chain skeleton of the hydrophobic group, various materials such as aliphatic, alicyclic, and aromatic can be used. Specifically, pyromellitic dianhydride, cyclobutane tetracarboxylic dianhydride, cyclohexane tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, and the like. In addition, materials described in detail in JP-A-11-193345, JP-A-11-193346, JP-A-11-193347, and the like can also be used.

  As described above, the polyimide containing the hydrophobic group of the chemical formula shown in the above formulas (1) to (5) may be used alone or may be used by mixing with other materials. However, when mixed and used, considering the heat resistance, solvent resistance, and affinity, the material to be mixed is also preferably polyimide.

  Moreover, the polyimide containing the hydrophobic group which is not shown by the chemical formula of said formula (1)-(5) can also be used. Specifically, it is a polyimide containing an aromatic diamine residue having a linear alkyl chain described in Japanese Patent No. 3097702.

  In view of the fact that the film forming process can be performed at a lower temperature, the polymer material having a hydrophobic group in the side chain preferably includes a soluble polyimide. Here, the soluble polyimide is a polyimide soluble in a solvent. A polyamic acid obtained by reacting a raw acid dianhydride and a diamine is obtained by chemical imidization treatment in a solution in advance. If the polyimide skeleton has a rigid structure, it is difficult to dissolve in a solvent. Therefore, bulky alicyclic cyclocarboxylic acid dihydrate is generally used in order to disturb the crystallinity of polyimide and make it easy to undergo solvation.

  It can be inferred from what kind of acid anhydride the polyimide is composed by analyzing characteristic group vibrations based on the infrared absorption spectrum of the polyimide thin film and measuring the ultraviolet-visible absorption spectrum. In a polyimide thin film having a bulky alicyclic cyclocarboxylic acid dihydrate skeleton, the absorption edge wavelength is 300 nm or less. For details, see Ikuo Imai, Rikio Yokota, edited by Japan Polyimide Research Group, “Latest Polyimides: Fundamentals and Applications”, published by NTS Corporation, 2002, “Electronics and Electronic Materials for Next Generation” "Development of new polyimide for high performance and high functional technology", published by Technical Information Association, Inc., 2003.

  Since the polyimide is dissolved in the solvent, the film can be formed at a temperature at which the solvent is evaporated, that is, at a low temperature of 200 ° C. or lower. In addition, unreacted polyamic acid and acid anhydrides of side reaction products do not remain in the polyimide thin film, and problems such as poor electrical characteristics of the polyimide film due to these impurities are unlikely to occur.

  Further, the soluble polyimide is not soluble in any solvent, and is soluble only in a specific highly polar solvent such as γ-butyllactone, N-methylpyrrolidone, N, N-dimethylacetamide and the like. Therefore, when a low-polarity solvent such as toluene, xylene, acetone, or isopropyl alcohol is used when forming the semiconductor layer 6 on the wettability changing layer 2, the thin film containing soluble polyimide is eroded by the solvent. There is no.

  In the case where the wettability changing layer 2 is composed of two or more kinds of materials, it is desirable that materials other than the soluble polyimide having a hydrophobic group in the side chain are also made of soluble materials. As a result, the film can be formed at a low temperature. Furthermore, it is desirable that the material exhibits good compatibility with soluble polyimide. As a result, phase separation hardly occurs in a solvent, which is optimal for a film forming process.

  The soluble material does not need to be an organic material, and a compound of an organic material and an inorganic material can be used. Examples thereof include phenol resins such as polyvinylphenol, melamine resins, polysaccharides such as pullulan subjected to acetylation treatment, silsesquioxane, and the like.

  In addition, if the material other than the soluble polyimide having a hydrophobic group in the side chain is also made of soluble polyimide, it is preferable in terms of heat resistance, solvent resistance, and affinity.

  The hydrophobic group of the soluble polyimide having a hydrophobic group in the side chain used in the present embodiment can have a structure represented by the following chemical formula (6), for example.

In the formula, R ¹ is an alkyl group having 1 to 12 carbon atoms, a haloalkyl group having 1 to 12 carbon atoms, or a halogen atom, and X and Y are each independently (a) to (d) in the chemical formula of the following formula 7. And a is an integer of 1 to 5.

  Details of this material are described in, for example, JP-A-9-272740. Moreover, it is also possible to make the polyimide made of the material represented by the chemical formulas of the above formulas (1) to (5) soluble in a solvent by an appropriate chemical treatment. A method for using these materials as soluble polyimide is described in International Publication WO01 / 000732.

  In addition, although the example of the diamine compound which gives the residue which has a side chain group was given above, it is also possible for tetracarboxylic acids to give the residue which has a side chain group.

  As another effect that the side chain R having a hydrophobic group is arranged on the surface, the interface property with the semiconductor layer 6 in contact with the side chain R can be improved. When the semiconductor layer 6 is made of an organic semiconductor, the effect is more remarkable. Good interface properties include: a. If the semiconductor is crystalline, the crystal grains become larger and the mobility increases; b. If the semiconductor is amorphous (polymer), the interface state density decreases and the mobility increases; c. When the semiconductor is a polymer and has a side chain such as a long-chain alkyl group, the orientation of the semiconductor is regulated so that the molecular axes of the π-conjugated main chain can be arranged in almost one direction, and the mobility is This refers to the appearance of a phenomenon such as an increase.

  The thickness of the wettability changing layer 2 in the present embodiment is preferably 30 nm to 3 μm, and more preferably 50 nm to 1 μm. If it is thinner than this, properties (insulating properties, gas barrier properties, moisture resistance, etc.) as a bulk body are impaired, and if it is thicker than this, the surface shape deteriorates, which is not preferable.

  As a method for imparting energy to a part of the wettability changing layer 2, a. Can be operated in air; b. High resolution is obtained, c. It is preferable to use ultraviolet irradiation from the viewpoint of little damage to the inside of the layer.

The conductive layer 5 is a layer obtained by solidifying a liquid containing a conductive material by heating, ultraviolet irradiation, or the like. In addition, the liquid containing a conductive material is
1 Dissolving conductive material in solvent,
2 Conductive material precursor or precursor dissolved in solvent,
3 Dispersing conductive material particles in a solvent,
4 Dispersing precursor particles of conductive material in a solvent,
Say etc. More specifically, conductive particles in which fine metal particles such as Ag, Au, and Ni are dispersed in an organic solvent or water, or doped PANI (polyaniline) or PEDOT (polyethylenedioxythiophene) are doped with PSS (polystyrene sulfonic acid). Examples thereof include an aqueous solution of a polymer.

  As described above, the wettability changing layer 2 is a layer made of a material whose critical surface tension is changed by applying energy such as heat, ultraviolet light, electron beam, plasma, etc., and the change of the critical surface tension before and after the energy application. A large amount is preferred. In the case of such a material, by applying energy to a part of the wettability changing layer 2 and forming patterns having different critical surface tensions composed of the high surface energy part 3 and the low surface energy part 4, the conductive material can be obtained. Since the contained liquid easily adheres to the high surface energy part 3 (lyophilic) and hardly adheres to the low surface energy part 4 (lyophobic), the liquid containing the conductive material according to the pattern shape The conductive layer 5 is formed by selectively adhering to the high surface energy part 3 that is lyophilic and solidifying it.

  Here, the liquid wettability (adhesiveness) to the solid surface will be added. FIG. 10 is a schematic diagram when the droplet 12 is in an equilibrium state at the contact angle θ on the surface of the solid 11, and Young's formula (i) is established.

γ _S = γ _SL + γ _L cos θ (i)
Here, γ _S is the surface tension of the solid 11, γ _SL is the interface tension between the solid 11 and the liquid (droplet 12), and γ _L is the surface tension of the liquid (droplet 12).

The surface tension is substantially synonymous with the surface energy and has exactly the same value. When cos θ = 1, θ = 0 °, and the liquid (droplet 12) is completely wetted. The value of γ _L at this time is γ _S -γ _SL , which is called the critical surface tension γ _{C of the} solid 11. γ _C plots the relationship between the surface tension of the liquid (droplet 12) and the contact angle using several types of liquid whose surface tension is known, and the surface tension at which θ = 0 ° (cos θ = 1) is obtained. It can be easily determined by obtaining (Zisman plot). gamma is a large solid 11 surface of the _C wettable liquid (droplet 12) (lyophilic), gamma _C small solid 11 hardly wetting liquid (liquid droplet 12) on the surface (lyophobic).

Here, it is easy to measure the contact angle θ by the droplet method. For the droplet method,
(A) A tangent method in which the reading microscope is directed to the droplet 12 and the cursor line in the microscope is aligned with the contact point of the droplet 12 to read the angle.
(B) The θ / 2 method obtained by doubling the angle of the cursor line when the cross cursor is aligned with the apex of the droplet 12 and one end is aligned with the point where the droplet 12 and the solid 11 sample contact each other.
(C) A three-point click method in which a droplet 12 is projected on a monitor screen, and one point (preferably a vertex) on the circumference and a contact point (two points) between the droplet 12 and the solid 11 sample are clicked and processed by a computer.
There is. The accuracy increases in the order of (a) → (b) → (c).

In order to ensure that the liquid containing the conductive material adheres only to the high surface energy part 3 that is lyophilic according to the pattern shape of the high surface energy part 3 and the low surface energy part 4, the surface energy difference is large. In other words, the critical surface tension difference Δγ _C needs to be large to some extent.

  As a method of applying a liquid containing a conductive material to the surface of the wettability changing layer 2, various coating methods such as a spin coating method, a dip coating method, a screen printing method, an offset printing method, and an ink jet method can be used. In order to be easily affected by the surface energy of the wettability changing layer 2, an ink jet method capable of supplying smaller droplets is particularly preferable. As described above, when a normal head of a level used in a printer is used, the resolution of the inkjet method is 30 μm and the alignment accuracy is about ± 15 μm, but the difference in surface energy in the wettability changing layer 2 is used. As a result, a finer pattern can be formed.

  Examples of the semiconductor layer 6 include inorganic semiconductors such as CdSe, CdTe, and Si, organic low molecules such as pentacene, anthracene, tetracene, and phthalocyanine, polyacetylene conductive polymers, polyparaphenylene and derivatives thereof, polyphenylene vinylene and derivatives thereof, and the like. Use organic semiconductors such as polyphenylene conductive polymers, polypyrrole and derivatives thereof, polythiophene and derivatives thereof, heterocyclic conductive polymers such as polyfuran and derivatives thereof, and ionic conductive polymers such as polyaniline and derivatives thereof However, when the organic semiconductor is used as described above, the effect of improving the characteristics by the wettability changing layer 2 appears more remarkably.

Next, a method for manufacturing the laminated structure shown in FIG. 2 will be described.
FIG. 11 is a process diagram showing an example of a manufacturing process of the laminated structure 1 of the present embodiment.
(S11) First, as shown in FIG. 11A, the wettability changing layer 2 is formed on a substrate 7 made of plastic such as glass, polycarbonate, polyarylate, polyethersulfone, silicon wafer, metal or the like. The wettability changing layer 2 is made of a material whose critical surface tension increases upon irradiation with ultraviolet rays and changes from low surface energy (lyophobic) to high surface energy (lyophilic). The preferred structure is as described above. The wettability changing layer 2 is formed by applying a solution obtained by dissolving or dispersing this material in an organic solvent or the like onto the substrate 7 by spin coating, dip coating, wire bar coating, casting, or the like and heating. The Specific examples of the solution include vertical alignment agents for liquid crystal display devices (such as PIA-X491-E01 manufactured by Chisso, SE-1211 manufactured by Nissan Chemical, JALS-2021 manufactured by JSR, etc.).

(S12) Next, as shown in FIG. 11B, the surface of the wettability changing layer 2 is irradiated with ultraviolet rays through a mask 8. Thereby, the pattern which consists of the low surface energy part 4 and the high surface energy part 3 is formed. The ultraviolet rays preferably include light having a relatively short wavelength of 100 nm to 300 nm.

(S13) Next, as shown in FIG. 11C, when a liquid containing a conductive material is supplied onto the wettability changing layer 2 on which the pattern is formed, using the ink jet apparatus shown in FIG. The conductive layer 5 is formed only on the high surface energy part 3.

FIG. 12 is a configuration diagram illustrating an example of an inkjet apparatus that performs application (printing) by an inkjet method.
The ink jet device 100 includes a surface plate 101, a stage 102, an ink jet head 103, an X axis direction moving mechanism 104 connected to the ink jet head 103, a Y axis direction moving mechanism 105 connected to the stage, and a control device 106. It has.

  Here, the stage 102 supplies a liquid containing a conductive material on a substrate using the ink jet apparatus 100, that is, wiring pattern ink (also referred to as functional material-containing ink or functional liquid) in the present invention. It is provided for the purpose of supporting the substrate 7 and includes a fixing mechanism for the substrate 7 such as an adsorption mechanism, which is not shown in the drawing. Further, a heat treatment mechanism for drying the solvent of the functional liquid applied on the substrate 7 may be accompanied.

  The inkjet head 103 is a head having a plurality of ejection nozzles, and the plurality of ejection nozzles are arranged on the lower surface of the inkjet head 103 at regular intervals in the X-axis direction. The functional material-containing ink is discharged from the discharge nozzle onto the substrate 7 supported on the stage 102. For example, a piezo method may be used as a droplet discharge mechanism of the inkjet head 103. In this case, a droplet is discharged by applying a voltage to a piezo element in the inkjet head 103 connected to a control device.

  The X-axis direction moving mechanism 104 includes an X-axis direction drive shaft 107 and an X-axis direction drive motor 108 in FIG. The X-axis direction drive motor 108 is a stepping motor or the like. When a drive signal in the X-axis direction is supplied from the control device 106, the X-axis drive shaft 107 is operated, and the inkjet head 103 moves in the X-axis direction.

  The Y-axis direction moving mechanism 105 orthogonal to the X-axis in a plane is composed of a Y-axis direction drive shaft 109 and a Y-axis direction drive motor 110. When a drive signal in the X-axis direction is supplied from the control device 106, the stage 102 moves in the Y-axis direction.

  The control device 106 supplies a discharge control signal to the inkjet head 103. Further, a drive signal in the X-axis direction is supplied to the X-axis direction drive motor 108, and a drive signal in the Y-axis direction is supplied to the Y-axis direction drive motor 110, respectively. The X-axis direction moving mechanism 104 and the Y-axis direction moving mechanism 105 may have a structure using a linear motor. The control device 106 is connected to the inkjet head 103, the X-axis direction drive motor 108, and the Y-axis direction drive motor 110, respectively, but the wiring is not shown.

  When the substrate 7 is fixed at a predetermined position on the stage 102, the ink jet apparatus 100 causes the ink jet head 103 and the stage 102 to relatively scan by numerical control with reference to the set print start position on the stage 102. However, the droplets of the functional material-containing ink are ejected from the inkjet head 103 to the high surface energy portion 3 of the substrate 7.

  A Z-axis direction moving mechanism that operates independently of the X-axis direction moving mechanism 104 may be provided between the inkjet head 103 and the X-axis direction moving mechanism 104. By moving the inkjet head 103 in the Z-axis direction, the distance between the substrate 7 and the discharge nozzle surface can be arbitrarily adjusted. A rotation mechanism that operates independently of the Y-axis direction moving mechanism 105 may be provided between the stage 102 and the Y-axis direction moving mechanism 105. By operating the rotation mechanism, it is possible to discharge droplets onto the substrate 7 in a state where the substrate 7 fixed on the stage 102 is rotated at an arbitrary angle.

(S14) Finally, as shown in FIG. 11 (d), a low molecular semiconductor is vapor-deposited or a solution in which a polymer semiconductor or its precursor is dissolved is spin-coated, dip-coated, wire bar-coated, cast The semiconductor layer 6 is formed by applying and heating by a method or the like.

By the way, in the conductive layer forming process (inkjet coating process) shown in FIG. 11C, the inkjet apparatus 100 is based on the numerical coordinates on the substrate 7 of the pattern formed in the ultraviolet irradiation process shown in FIG. The application (printing) of the functional material-containing ink is performed. At this time, since regions having different surface energies formed on the surface of the substrate 7 have almost no difference in reflectance and form, it is generally very difficult to view with a microscope or a camera. It has been difficult to properly align the inkjet printing pattern directly with the pattern (matching the relative positional relationship). Therefore, in the past, a mark that can be visually recognized is provided on the substrate 7 prior to the process, and the mark that can be visually recognized is used as a reference in both the high surface energy region and the low surface energy region as well as the inkjet printing. Ink-jet printing alignment cannot be directly aligned with the surface energy pattern, so alignment accuracy (alignment accuracy) has been reduced.
At this time, if the alignment accuracy of the high surface energy pattern and the application of the conductive material-containing ink by ink jet is poor, the ink is applied out of the high surface energy region. As a result, the electrode shape is deteriorated or in the worst case, the electrode Will cause a short circuit.
The present invention solves this problem.

The wiring pattern forming method according to the present invention will be described below.
The method for forming a wiring pattern according to the present invention uses the inkjet apparatus 100 shown in FIG. 12 to form a high surface energy region (high surface energy portion 3) and a low surface energy region (low surface energy portion 4) that form a wiring pattern on the surface. ) Are formed on a substrate (substrate 7) having a wettability changing layer (wetability changing layer 2) on which a droplet of wiring ink is discharged from a head (inkjet head 103) having a discharge nozzle. A line pattern composed of the high surface energy region having a width corresponding to the landing width of a droplet discharged from the discharge nozzle is formed on the wettability changing layer with a pitch q having a constant interval. Forming an alignment mark arranged in a stripe pattern at an interval different from the pitch q with respect to the alignment mark When discharging from the discharge nozzle so as to be a plurality of dot lines at the printing pitch p, the center line of the target landing point of the predetermined dot line in the plurality of dot lines becomes the center line of the predetermined line of the alignment mark The head and / or the substrate is scanned from a temporarily set print start position so as to match, and a plurality of dot lines are printed by discharging a droplet of wiring ink from the discharge nozzle to the alignment mark. The alignment in which the center line of the dot line and the mutual center line substantially coincide with each other from the test printing process and the state where the wiring ink protrudes from the line of the alignment mark for each printing line which is a printing area based on each of the plurality of dot lines A detection step of identifying a line of the mark and detecting a position of the line in the line arrangement; A printing position adjusting step for adjusting the printing start position based on the detection result; and a patterning step for printing a wiring pattern on the wettability changing layer by the head from the adjusted printing start position. is there.

  Here, “the line of the alignment mark where the dot line and the center line substantially coincide with each other” means an alignment where the dot line and the center line completely coincide as shown in FIG. 13, FIG. 15, and FIG. In addition to the mark line (high surface energy line), a plurality of high surface energy lines (L2, L3) in which the wiring ink does not protrude as shown in FIG. 14A, the protruding direction as shown in FIG. 14B. Are adjacent lines (high surface energy lines L2 and L3), and a high surface energy line (Ld) in which the protruding portion of the wiring ink from the high surface energy line is not in contact with the adjacent print line as shown in FIG. , Le, Lf) and the like.

First, a first embodiment of a wiring pattern forming method according to the present invention will be described.
That is, the wiring pattern forming method according to the present invention performs processing in the following procedure in the processes from step S12 to step S13.

(S21) In the wettability changing layer 2, lines (high surface energy lines) L1, L2, L3, L4, and L5 made of a high surface energy region having the same surface energy as the high surface energy portion 3 are shown in the vertical direction in the figure. As shown in FIG. 13 (a), the alignment mark M is formed by arranging in a stripe pattern with a pitch q of a constant interval. This process is performed in the ultraviolet irradiation step in step S12. At this time, when the high surface energy portion 3 is formed, the alignment mark M is preferably formed in a region that does not affect the wiring pattern or the like.

  FIG. 13A shows a surface energy pattern (a pattern in which high surface energy lines are arranged in stripes with a pitch q of a constant interval) on the substrate 7 and ink for wiring by the ink jet apparatus 100 at intervals of dot lines. Of the alignment with an ink pattern (hereinafter referred to as an ink jet pattern) formed by printing as a pattern arranged in a stripe pattern at a pitch p, the alignment in the horizontal direction in the figure (for example, the X direction on the stage 102 of the ink jet apparatus 100). It is an example of the alignment mark M for correct | amending.

  Further, FIG. 13B shows the target landing positions of the alignment marks M formed on the wettability changing layer 2 of the substrate 7 and the alignment marks M of the ink droplets for wiring supplied from the ink jet apparatus 100. This is shown as a droplet d. That is, the five dot lines D1, D2, D3, D4, and D5 in which the droplets d are arranged in a line at regular intervals land at regular intervals p, but the high surface energy formed on the wettability changing layer 2 is high. The pitch q between the lines L1, L2, L3, L4, and L5 is set so as not to be equal to the pitch p of the dot pattern. As will be described later, the difference between the pitch p and the pitch q is the basic resolution of measurement.

  In the inkjet apparatus 100, the print pitch is generally set by a divisor of the discharge nozzle pitch of the inkjet head 103, and it is difficult to set the print pitch to an arbitrary pitch. Therefore, the pitch p of the dot lines D1 to D5 is determined first. After that, it is preferable to set the pitch q of the high surface energy lines L1 to L5. In addition, in FIG.13 (b), although the relationship of q> p was shown, it is good also as a relationship of p> q. The pitch of the dots (droplets d) in the longitudinal direction of the dot lines D1 to D5 (the direction along the high surface energy line, the vertical direction in FIG. 13B) is the ink from the high surface energy lines L1 to L5. Set so that does not overflow. When ink overflows from the line, it is difficult to accurately measure the positional deviation between the high surface energy line and the dot line, and it is difficult to accurately adjust the alignment.

  Further, the line widths of the high surface energy lines L1, L2, L3, L4, and L5 have a marginal size that does not protrude from the high surface energy region when the droplet d reaches the center of the line. That is, the width of the high surface energy lines L1, L2, L3, L4, and L5 is set to a width corresponding to the landing width of the droplet d ejected from the ejection nozzle of the inkjet head 103.

  This is for improving the resolution of alignment. Although it is desirable to confirm the optimum line width by using the ink jet head 103 and the wiring ink that are actually used, Table 1 shows an example. For example, when the inkjet head 103 having a discharge amount of one droplet d of 8 pL is used, the line width of the high surface energy line is appropriately 60 μm.

(S22) Next, when discharging from the discharge nozzles of the inkjet head 103 so as to form a plurality of dot lines D1 to D5 at a printing pitch p with an interval different from the pitch q with respect to the alignment mark M as described above. Further, from the temporarily set print start position such that the center line of the target landing point of the predetermined dot line in the plurality of dot lines D1 to D5 coincides with the center line of the predetermined high surface energy line of the alignment mark M. The inkjet head 103 and / or the substrate 7 (stage 102) is scanned, and ink droplets for wiring are ejected from the ejection nozzles of the inkjet head 103 to the alignment mark M to print the plurality of dot lines D1 to D5 (inkjet). Printing) (test printing process, FIG. 13C).

  This process and subsequent processes are performed before step S13. That is, in the inkjet apparatus 100, the substrate 7 is set on the stage 102 by abutting the outer shape of the substrate 7 against the positioning pins. At this stage, a rough alignment state is set, and the print start position set in the control device 106 is a temporary print start position. That is, the print start position is temporarily set so that the center line of the target landing point of the predetermined dot line in the dot lines D1 to D5 substantially coincides with the center line of the predetermined high surface energy line of the alignment mark M. The inkjet head 103 and / or the substrate 7 (stage 102) are scanned from the printing start position to print the dot lines D1 to D5. For example, as shown in FIG. 13B, among the five dot lines D1 to D5, the center line of the target landing point of the center dot line D3 is substantially coincident with the center line of the center high surface energy line L3. The inkjet head 103 and / or the stage 102 are moved to print the wiring ink. Such a high surface energy line L3 is referred to as a reference high surface energy line.

  At this time, if the alignment of the surface energy pattern on the substrate 7 and the ink jet pattern when the ink for wiring is printed by the ink jet apparatus 100 is accurately matched, the state of the ink for wiring is changed in the state shown in FIG. Since the droplet d is landed on the surface of the wettability changing layer 2 and the ink of the droplet d spreads in the high surface energy region with good wettability, a linear print region (print line) as shown in FIG. I) is formed. That is, since the landing positions of the high surface energy line L3 and the dot line D3 coincide with each other, the high surface energy line L3 is printed without the ink protruding from the line. On the other hand, the ink lands on the other high surface energy lines L1, L2, L4, L5, for example, the high surface energy line L4 adjacent to the right of the center line L3, shifted to the left by (qp). For this reason, as shown in FIG. 13C, ink droplets protrude from the left side of the high surface energy line L4 and are printed. As described above, the line where the high surface energy pattern and the ink jet landing are matched is printed without the ink protruding, and the line where the high surface energy pattern and the ink jet landing are shifted is printed with the ink protruding.

(S23) The position in the line arrangement of the high surface energy line where the wiring ink landed on the alignment mark M does not protrude is detected, and the amount of alignment position deviation is obtained as a detection result (detection step).

  As described above, when the position of the high surface energy pattern on the wettability changing layer 2 in the ink jet apparatus 100 and the position of the ink jet pattern coincide with each other, as shown in FIG. L3 is printed without protruding. On the other hand, in FIG. 13C, if the high surface energy pattern on the substrate 7 on the stage 102, that is, the wettability changing layer 2 is shifted to the right, the high surface energy line where the ink does not protrude is the center. It becomes the left side line. For example, when the substrate 7 is shifted by a distance of 2 × (q−p) in the right direction, the ink does not protrude from the leftmost high surface energy line L1 in FIG. In this way, the high surface energy line that does not protrude is regarded as a high surface energy line whose center line substantially coincides with the dot line, that is, the position in the arrangement of the plurality of high surface energy lines of the alignment mark M, that is, a reference height. By specifying the number of lines from the surface energy line, it is possible to specify the high surface energy pattern, that is, the amount of misalignment between the substrate 7 and inkjet printing. In addition, since the identification of such a high surface energy line that does not protrude from the wiring ink is visually recognizable, an image obtained by imaging the surface of the wettability changing layer 2 with an ordinary imaging device is processed. Just do it.

  As described above, the alignment position deviation between the high surface energy pattern and the ink jet pattern is measured by checking whether or not the ink protrudes from the high surface energy line, but the pitch of the high surface energy lines L1 to L5. If the difference between q and the pitch p of the dot lines D1 to D5 in the ink jet pattern becomes small, there may be a case where there is no protrusion on the plurality of high surface energy lines due to the impact of the landing accuracy of ink jet printing (FIG. 14A). . In this case, the average value of the amount of deviation between the surface energy pattern and the inkjet pattern obtained from each of the plurality of lines that do not protrude (high surface energy lines L2 and L3 in FIG. 14A) may be used.

  Moreover, it protrudes in all the high surface energy lines L1, L2, L3, L4, and L5, and when it sees in order of a line arrangement | sequence, the side which protrudes may become a reverse side on the way (FIG.14 (b)). In this case, what is necessary is just to set it as the average value of the deviation | shift amount of the surface energy pattern calculated | required from each adjacent line (high surface energy line L2, L3 in FIG.14 (b)) from which the protruding direction is an opposite side.

(S24) Based on the detection result, the control device 106 adjusts the temporarily set print start position (print position adjustment step). That is, the temporarily set print start position is corrected so as to cancel the position shift corresponding to the alignment position shift amount between the surface energy pattern and the inkjet pattern obtained in step S23.

(S25) A wiring pattern made of the conductive layer 5 is printed on the wettability changing layer 2 by the inkjet head 103 from the printing start position adjusted in step S24 (patterning step). Since the wiring pattern is printed by performing step S13 after correcting the alignment positional deviation between the surface energy pattern and the ink jet pattern as described above, the pattern of the high surface energy portion 3 and the ink jet print pattern by the ink jet apparatus 100 are identical. In addition, the wiring pattern can be formed with high accuracy.

  FIG. 13 shows an alignment pattern for measuring and adjusting the alignment in the horizontal direction in the drawing (for example, the X direction on the stage 102 of the inkjet apparatus 100). On the other hand, in order to measure and adjust the alignment in the vertical direction (for example, the Y direction on the stage 102 of the inkjet apparatus 100) in the drawing, a horizontal stripe alignment pattern as shown in FIG. 15 may be used. That is, lines (high surface energy lines) L6, L7, L8, L9, and L10 made of a high surface energy region having the same surface energy as the high surface energy portion 3 are formed on the wettability changing layer 2 with the horizontal direction in the figure as the line length. The alignment mark M ′ is formed by arranging in stripes at a pitch q at a constant interval (FIG. 15A). If the alignment mark M ′ is used to perform the process according to steps S21 to S23, the alignment position deviation in the vertical direction in the figure can be specified.

  The alignment marks M and M ′ have a configuration in which the high surface energy lines are arranged in a row in the horizontal direction or the vertical direction at equal intervals, but a plurality of rows may be provided. For example, the alignment mark M ″ shown in FIG. 16 has a configuration in which the alignment marks M are provided in three stages, and the interval between the high surface energy lines in each step is q, and the interval between the ink jet patterns is p. In FIG. 16, it is designed so that there is no deviation from the surface energy pattern when the inkjet pattern coincides with the high surface energy line in the middle of the middle stage. The upper leftmost line is 3 × (qp). The lower rightmost line is designed to be shifted to the left by 3 × (q−p) so that the landing is shifted to the right. Thereby, even if the range of alignment correction is widened, the alignment mark does not become horizontally long.

Next, a second embodiment of the wiring pattern forming method according to the present invention will be described.
Here again, the wiring pattern forming method according to the present invention performs the following steps in the processes from step S12 to step S13.

(S31) Lines (high surface energy lines) La, Lb, Lc, Ld, Le, Lf, Lg, Lh, Li made of a high surface energy region having the same surface energy as the high surface energy part 3 on the wettability changing layer 2 Are arranged in a stripe pattern with a pitch q at a constant interval with the vertical direction as the line length in the figure, and the alignment mark N is formed (FIG. 17A). This process is performed in the ultraviolet irradiation step in step S12. At this time, when the high surface energy portion 3 is formed, the alignment mark N is preferably formed in a region that does not affect the wiring pattern or the like.

  FIG. 17A shows a surface energy pattern (a pattern in which high surface energy lines are arranged in a stripe pattern with a pitch q of a constant interval) on the substrate 7 and a dot-like line of wiring ink by the inkjet device 100 at a constant interval. Alignment for correcting the alignment in the horizontal direction in the drawing (for example, the X direction in the stage 102 of the inkjet apparatus 100) among the alignments with the inkjet pattern formed by printing as a pattern arranged in stripes at a pitch p of It is an example of a mark N.

  FIG. 17B shows the target landing positions of the alignment marks N formed on the wettability changing layer 2 of the substrate 7 and the alignment marks N of the ink droplets for wiring supplied from the inkjet apparatus 100. This is shown as a droplet d. That is, nine dot lines Da, Db, Dc, Dd, De, Df, Dg, Dh, and Di in which droplets d are arranged in a line at regular intervals land at regular intervals p, but the wettability changing layer 2 The pitch q between the high surface energy lines La to Li formed above is set to be not equal to the pitch p of the dot lines so that the high surface energy lines and the dot lines are deviated from each other in a fixed relationship. . In FIG. 17, q> p.

Here, in the alignment mark N, when the line width of the high surface energy lines La to Li is w and the landing droplet diameter of the wiring ink droplet d supplied from the inkjet apparatus 100 is a, the following formula (I It is preferable to set w so as to satisfy the relationship of This effect will be described in the detection step.
q-w <a <2q-w (I)

(S32) Next, when discharging from the discharge nozzles of the inkjet head 103 so as to form a plurality of dot lines Da to Di at a printing pitch p different from the pitch q with respect to the alignment mark N as described above. In addition, from the print start position set temporarily so that the center line of the target landing point of the predetermined dot line in the plurality of dot lines Da to Di coincides with the center line of the predetermined high surface energy line of the alignment mark N The inkjet head 103 and / or the substrate 7 (stage 102) is scanned, and ink droplets for wiring are ejected from the ejection nozzles of the inkjet head 103 onto the alignment mark N to print the plurality of dot lines Da to Di (inkjet). Printing) (test printing process, FIG. 17C).

  This process and subsequent processes are performed before step S13, as in the first embodiment. That is, in the inkjet device 100, the substrate 7 is set on the stage 102 by abutting the outer shape of the substrate 7 against the positioning pin, and the printing start position set in the control device 106 is set as the temporary printing start position. Then, the test printing is performed. For example, as shown in FIG. 17B, the center line of the target landing point of the center dot line De among the nine dot lines Da to Di is substantially coincident with the center line of the center high surface energy line Le. The inkjet head 103 and / or the stage 102 are moved to print the wiring ink.

  At this time, since the droplet d of the wiring ink lands on the surface of the wettability changing layer 2 and the ink of the droplet d spreads in the high surface energy region with good wettability, as shown in FIG. Line-shaped print areas (print lines) Ia to Ii are formed corresponding to the high surface energy lines La to Li.

(S33) In the test printing, whether or not the protruding portion from the high surface energy line of the alignment mark N of the wiring ink landed for each of the printing lines Ia to Ii is in contact with the adjacent printing line I, the dot The high surface energy line of the alignment mark N whose line and the center line of each other substantially coincide with each other is specified, then the position of the specified high surface energy line in the line arrangement is detected, and the amount of alignment positional deviation is obtained as a detection result (detection Process).

  At this time, in relation to the pitch q of the high surface energy line of the alignment mark N, the line width w, and the landing droplet diameter a of the droplet d, since “a <2q−w” in the formula (I), alignment is performed. When the center lines of the high surface energy line and the dot line of the mark N coincide with each other, as shown in FIG. 18A, the wiring ink droplet d protrudes from the high surface energy line LH. The portion protrudes evenly to the left and right of the high surface energy line LH, and does not contact the printing area (print line I) corresponding to the adjacent high surface energy line LH (w / 2 + a / 2 <q). On the other hand, since “qw <a” in the formula (I), when the positional deviation between the high surface energy line and the dot line of the alignment mark N is large (for example, the droplet d is almost from the high surface energy line). 18 (b), since the landing droplet diameter a of the droplet d is larger than the interval (qw) between the high surface energy lines LH, the target high surface energy line LH While the ink spreads to form the print line I, the portion of the wiring ink droplet d protruding from the high surface energy line LH comes into contact with the print region corresponding to the adjacent high surface energy line LH.

  FIG. 18 shows the configuration when the landing droplet diameter a of the droplet d is larger than the line width w of the high surface energy line LH (a> w), but as long as the relationship of the formula (I) is satisfied. The relationship of a ≦ w as shown in FIG. That is, if the alignment of the surface energy pattern on the substrate 7 and the ink jet pattern when the wiring ink is printed by the ink jet apparatus 100 is accurately matched, the high surface energy line Le in the state shown in FIG. Since the landing position of the dot line De coincides with that of the dot line De, the ink is printed on the high surface energy line Le without protruding from the line (FIG. 17C). On the other hand, since the other high surface energy lines La to Ld and Lf to Li are not aligned with the landing positions of the dot lines Da to Dd and Df to Di, the high surface energy lines La to Ld and Lf to Li have ink lines. It is printed out of the area (FIG. 17C).

  In addition, among the high surface energy lines La to Ld and Lf to Li, for example, the ink lands on the high surface energy line Lf adjacent to the right of the center line Le with a shift of (qp) to the left. For this reason, as shown in FIG. 17C, ink droplets protrude from the left side of the high surface energy line Lf and are printed. In this way, if the extent of ink protrusion is an ideal state, a predetermined high surface energy line (for example, a high surface) that is a target in which a predetermined dot line (for example, dot line De) and the center line of each other coincide with each other is used. The n-th high surface energy line from the energy line Le) is n × (q−p). Note that n is an integer of 1 or more.

  Here, since the wiring ink used for the dot line is made of a material that exhibits conductivity after drying, the high level of the droplet d of the wiring ink is determined based on the presence or absence of electrical continuity between adjacent print lines. It may be determined whether or not the portion protruding from the surface energy line LH is in contact with the printing region (printing line) I corresponding to the adjacent high surface energy line LH. For example, in FIG. 18A, there is no electrical continuity between the print line corresponding to the high surface energy line LH in the center of the figure and the adjacent print line. In FIG. 18B, there is electrical continuity between the print line corresponding to the high surface energy line LH at the right end of the figure and the print line adjacent thereto.

  Accordingly, in the alignment mark N satisfying the relationship of the formula (I) as shown in FIG. 17, the dot line De and the center line of each other coincide with the high surface energy line Le. The portion protruding from the high surface energy line Le does not contact the printing lines Id and If corresponding to the adjacent high surface energy lines Ld and Lf, and is electrically connected between the printing line Ie and the adjacent printing lines Id and If. There is no continuity (FIG. 17C). On the other hand, the ink drops for wiring land so that the adjacent dot lines are short-circuited at a position that is a fixed amount left and right from the high surface energy line Le. In FIG. 17C, the portions of the printing ink lines Ia, Ib, Ih, Ii that protrude from the high surface energy lines La, Lb, Lh, Li of the wiring ink droplet d are adjacent printing lines Ib, Ic, Ig. , Ih, and there is electrical conduction between the printing lines Ia to Ic and between the printing lines Ig to Ii. Therefore, in FIG. 17C, the print lines Id, Ie, If are lines that are not electrically connected between the print lines, and the center of the print widths Id, Ie, If in the line width direction (print It can be determined that the line Ie) is a position where the center lines of the high surface energy line and the dot line coincide with each other.

  As described above, when the alignment mark N is arranged with a high surface energy line satisfying the formula (I), and the center lines of the high surface energy line and the dot line of the alignment mark N coincide with each other, the printing is performed. The portion of the line ink droplet that protrudes from the high surface energy line does not contact the printing line corresponding to the adjacent high surface energy line (there is no electrical conduction between the corresponding printing lines), and the high surface energy. When the positional deviation between the line and the dot line becomes large, the portion of the printing ink that protrudes from the high surface energy line of the wiring ink contacts the printing line corresponding to the adjacent high surface energy line (adjacent printing). (There is electrical continuity between lines) And the high surface energy line of the alignment mark N whose center lines substantially coincide with each other, and then the position of the specified high surface energy line in the line arrangement is detected, so that the high surface energy pattern, that is, the substrate 7 and the ink jet printing are detected. It is possible to specify the amount of misalignment.

  In the case of the first embodiment of the present invention (FIG. 13), the positional deviation amount is obtained by detecting the presence or absence of the wiring ink from the high surface energy line. 17) is easy to detect because it is only necessary to confirm the contact of the protruding portion of the wiring ink between adjacent print lines. In addition, since the wiring ink is made of a material that exhibits conductivity after drying, the contact of the protruding portion of the wiring ink can be accurately determined by examining the electrical continuity (short circuit) between the adjacent print lines.

  Further, in the case of the first embodiment of the present invention (FIG. 13), the line width of the high surface energy line is determined by the droplet d in order to clarify whether or not the wiring ink protrudes from the high surface energy line. Although it was preferable that the width of the edge that does not protrude from the high surface energy line area when landing at the center of the line was the case, in the case of this embodiment, the adjacent high surface energy line when landing at the center of the high surface energy line. If the contact area does not come into contact with the printing area, the landing droplet diameter of the wiring ink may be larger than the line width of the high surface energy line.

  FIG. 19 shows an example of an ink jet dot pattern in that case. When the landing droplet diameter a of the wiring ink is larger than the pitch q of the high surface energy line LH, even if the relationship of the formula (I) is satisfied, the landing liquid will remain as shown in FIG. Drops come into contact with each other. Therefore, as an arrangement pattern of the droplets d, as shown in FIG. 19A, the droplets d corresponding to the adjacent high surface energy lines LH are not adjacent to each other in the arrangement direction of the high surface energy lines LH. A staggered inkjet dot pattern may be used. As a result, the landing droplets of the adjacent high surface energy lines LH do not come into contact with each other, so that an appropriate printing line I can be obtained, and the contact of the protruding portion of the wiring ink between the adjacent printing lines I is confirmed. By doing so, it becomes possible to specify the high surface energy line of the alignment mark N in which the dot line and the center line of each other substantially coincide (FIG. 19B).

(S34) Based on the detection result, the control device 106 adjusts the temporarily set print start position (print position adjustment step). That is, the temporarily set print start position is corrected so as to cancel the position shift corresponding to the alignment position shift amount between the surface energy pattern and the inkjet pattern obtained in step S33.

(S35) A wiring pattern made of the conductive layer 5 is printed on the wettability changing layer 2 by the inkjet head 103 from the printing start position adjusted in step S34 (patterning step). Since the wiring pattern is printed by performing step S13 after correcting the alignment positional deviation between the surface energy pattern and the ink jet pattern as described above, the pattern of the high surface energy portion 3 and the ink jet print pattern by the ink jet apparatus 100 are identical. In addition, the wiring pattern can be formed with high accuracy.

  In the second embodiment of the present invention, the configurations of FIGS. 14 to 16 can be applied.

  Any one of such alignment marks M, M ′, M ″, N is arranged on the wettability changing layer 2, for example, at the left and right positions of the substrate 7, thereby shifting the position of the substrate 7 and the displacement in the tilt direction. Since it can be specified, alignment can be achieved by correcting the position such as rotating or moving the stage 102 that fixes the substrate 7 during ink jet printing based on the information. Further, when using the substrate 7 made of a material that expands and contracts depending on temperature and humidity, such as a resin substrate, the substrate may expand and contract between processes. By using the wiring pattern forming method of the present invention, the surface energy pattern The amount of substrate expansion / contraction between the formation and the inkjet pattern formation can be measured.

  In addition, if the ink repellency in the low surface energy region is high, ink that protrudes from the high surface energy line to the low surface energy region is easily repelled and drawn into the high surface energy line, and alignment of the high surface energy pattern and the inkjet pattern is achieved. It becomes difficult to measure the positional deviation.

  Table 2 shows that the surface energy of the low surface energy region in the wettability changing layer 2 and the high surface energy by supplying the wiring ink to the boundary between the high surface energy line of the alignment mark M and the low surface energy region by the inkjet device 100. The result of having evaluated whether the wiring ink was drawn into the line is shown. As a result, it was found that when the surface energy was less than 30 mN / m, the ink was easily drawn into the high surface energy region side. Therefore, the wettability changing material used for the wettability changing layer 2 of the present invention preferably has a surface energy on the low surface energy region side of 30 mN / m or more.

Next, the transistor element substrate according to the present invention will be described.
FIG. 20 shows a configuration of a transistor element substrate according to the present invention. 20A is a top view thereof, and FIG. 20B is a sectional view thereof.
The transistor element substrate 41 is a TFT (Thin Film Transistor). In the formation thereof, first, an electrode layer 42 serving as a gate electrode on the wettability changing layer 2 provided on the substrate 7, a wettability changing layer 2 also serving as a gate insulating film, an electrode layer 5a serving as a source electrode, and a drain electrode are formed. The electrode layer 5b is formed.

  The gate electrode 42 is connected to the bus line for driving by the driver IC for scanning signal, and similarly, the source electrode 5a is also connected to the bus line for driving by the driver for data signal.

  Next, the transistor layer 41 is completed by forming the semiconductor layer 6 in an island shape including a channel region by, for example, a microcontact printing method. Note that the microcontact printing method is a method in which a PDMS (polydimethylsiloxane) stamp is produced using a master patterned by photolithography, a liquid containing a semiconductor material is attached to the convex portions, and transferred to a substrate. . Since the semiconductor layer 6 is formed in an island shape including the channel region, no current leaks to adjacent element portions.

  If necessary, the transistor element substrate 41 is made of a passivation film made of aluminum nitride, silicon nitride, silicon nitride oxide, or the like in order to prevent the characteristics of the electronic element (TFT) 41 from being deteriorated by oxygen, moisture, radiation, or the like. It is desirable to coat.

  In manufacturing the transistor element substrate 41, the gate electrode 42, the source electrode 5a, and the drain electrode 5b are formed by applying the wiring pattern forming method of the present invention. As a result, the alignment positional deviation between the high surface energy pattern and the ink jet pattern can be suppressed, and the wiring pattern can be formed with high accuracy. For example, the distance (channel length) between the source electrode 5a and the drain electrode 5b can be reduced. The performance as a TFT can be improved by shortening.

  The display device according to the present invention is configured by arranging such transistor element substrates 41 in a matrix and stacking display elements. Examples of the display element of the present invention include a display element using liquid crystal such as TN, STN, guest-host type, polymer-dispersed liquid crystal (PDLC). In addition, an electrophoretic element that performs display by moving colored particles sealed in a cell or a microcapsule can also be suitably used.

Examples of the present invention will be described below.
Example 1
Here, the formation of the gate electrode 42 in the transistor element substrate 41 shown in FIG. 20 was performed under the following conditions.
First, a wettability changing material having a side chain made of hydrocarbon was applied on a glass substrate (substrate 7) by spin coating, and baked at 280 ° C. to form the wettability changing layer 2.
Next, ultraviolet light (wavelength 250 nm) was irradiated at 8 mJ / cm ^{2 in} the shape of the gate electrode 42 shown in FIG. 20 through a photomask to form a pattern of a high surface energy region. Further, in a region where the gate electrode 42 is not formed near the left and right edges of the substrate 7, the alignment mark M ″ shown in FIG. 16 and the high surface energy pattern formed by rotating the alignment mark M ″ shown in FIG. An alignment mark M1) was formed (step S21). The pitch q of the high surface energy line of the alignment mark M1 was 100 μm, and the line width was 60 μm. The surface energy in the low surface energy region was 32 mN / m.

  Next, the processed substrate 7 is set in the ink jet apparatus 100 shown in FIG. 12, and the silver nanometal ink is used for ink jet only on the alignment mark M1 portion with reference to the temporarily set print start position. A dot line was test printed by this method (step S22). At this time, the ultraviolet irradiation position and the printing position were aligned with respect to one corner of the substrate 7 during ultraviolet irradiation and inkjet printing, and each alignment accuracy was ± 0.5 mm. Further, the nozzle pitch in the inkjet head 103 is 254 μm, the printing resolution is 2400 dpi (minimum pitch 10.6 μm), and the ink discharge amount is 8 pL. Further, the pitch p of the ink jet pattern printed on the alignment mark M1 was 95.25 μm. Therefore, the alignment position shift between the high surface energy pattern and the inkjet pattern can be measured with an accuracy of 4.75 μm.

  The positional deviation of the substrate 7 (including the positional deviation in the X and Y directions on the stage 102 and the amount of rotation on the stage plane) is calculated from the result of the ink jet test printing (step S23), and the temporarily set printing is performed. After correcting the start position (step S24), the pattern of the gate electrode 42 was printed (step S25). As a result, it was possible to form the gate electrode 42 having a good pattern with no ink protruding.

(Comparative Example 1)
In Example 1, the wettability changing material containing fluorine in the side chain was used, and other than that was the same as Example 1. In this case, the surface energy of the low surface energy region in the wettability changing layer was 25 mN / m. As a result, the nano metal ink was applied to the alignment mark M1 by the ink jet apparatus 100, but the ink was drawn to the high surface energy region side in all the high surface energy lines, and the positional deviation between the surface energy pattern and the ink jet pattern was measured. I couldn't.

(Example 2)
Under the same conditions as in Example 1, an electrode array in which the gate electrodes 42 shown in FIG. As a result, no protrusion was observed in all the electrodes.

(Comparative Example 2)
A reference mark was previously provided on the surface of the wettability changing layer 2 of the substrate 7 by the inkjet method, and then the same process as in Example 2 was performed. Note that ultraviolet irradiation and ink jet printing through a photomask were performed by aligning with the reference mark as a reference. As a result, there was misalignment of the alignment in the rotation direction, and about 50% of the gate electrode 42 was found to protrude ink.

(Example 3)
The same wettability changing material as in Example 2 is laminated on the electrode array in which the gate electrodes 42 of Example 2 are arranged for 200 elements vertically and horizontally by the same method, aligned with the gate electrode 42, and the source electrode 5a. The pattern of the drain electrode 5b and the alignment mark M2 having the same pattern as the alignment mark M1 provided when forming the gate electrode layer 42 were exposed to ultraviolet rays. Next, the substrate 7 is set on the ink jet device 100, and a dot pattern ink jet test print using the nano metal ink is performed on the alignment mark M2 on the basis of the temporarily set print start position, and the amount of alignment position deviation is detected. Then, after correcting the temporarily set print start position based on the detection result, the inkjet printing of the wiring pattern of the source electrode 5a and the drain electrode 5b was performed. Finally, a solution obtained by dissolving polymer 1 which is an organic semiconductor synthesized by a scheme as shown in the following formula (8) in toluene was applied to the channel portion by an inkjet method and dried to form a semiconductor layer 6. .

  The gate electrode 42 and the source / drain electrodes 5a and 5b are formed in a good shape without short-circuiting, and the gate lead line is connected to the driver IC for the scanning signal and the source lead line is connected to the driver for the data signal. When driven, the transistor corresponding to the data signal and the scanning signal could be driven.

Example 4
An electrophoretic element was bonded to the TFT array produced in Example 3 to produce a display device. Specifically, the electrophoretic element is prepared by mixing microcapsules 51 containing titanium oxide particles 51a and oil blue colored isopar 51b with an aqueous PVA solution 54 and applying the mixture onto a polycarbonate substrate 52 on which a transparent electrode 53 made of ITO is formed. Thus, a layer composed of the microcapsule 51 and the PVA binder 54 was formed. This substrate and the transistor array of Example 3 were laminated to form the display device shown in FIG.
When this display device was operated by inputting a signal to each electrode, all the pixels showed good transistor characteristics, and thus a good image could be displayed.

(Example 5)
The gate electrode 42 in the transistor element substrate 41 shown in FIG. 20 was formed using the alignment mark shown in FIG.
First, the wettability changing layer 2 was formed in the same manner as in Example 1 using a glass substrate (substrate 7).
Next, ultraviolet light (wavelength 250 nm) was irradiated at 8 mJ / cm ^{2 in} the shape of the gate electrode 42 shown in FIG. 20 through a photomask to form a pattern of a high surface energy region. Further, the alignment mark N shown in FIG. 17 and the high surface energy pattern (alignment mark N1) formed by rotating the alignment mark N shown in FIG. 19 by 90 ° in the region where the gate electrode 42 is not formed near the left and right ends of the substrate 7. (Step S31). The pitch q of the high surface energy line of the alignment mark N1 was 85 μm, and the line width w was 40 μm.

  Next, the processed substrate 7 is set in the ink jet apparatus 100 shown in FIG. 12, and the silver nanometal ink is used for ink jet only on the alignment mark N1 portion with reference to the temporarily set print start position. A dot line was test printed by this method (step S32).

At this time, the ultraviolet irradiation position and the printing position were aligned with respect to one corner of the substrate 7 during ultraviolet irradiation and inkjet printing, and each alignment accuracy was ± 0.5 mm. Further, the nozzle pitch in the inkjet head 103 is 254 μm, the printing resolution is 4800 dpi (minimum pitch 5.29 μm), the ink discharge amount is 8 pL, and the landing diameter a is 60 μm. Therefore, the formula (I) is satisfied as follows.
q−w = 85−40 = 45 μm <a = 60 μm
a = 60 μm <2q−w = 2 × 85−40 = 130 μm
The pitch p of the ink jet pattern printed on the alignment mark N1 was 79.375 μm. Therefore, the alignment position shift between the high surface energy pattern and the inkjet pattern can be measured with an accuracy of 5.625 μm.

  The positional deviation of the substrate 7 (including the positional deviation in the X and Y directions on the stage 102 and the amount of rotation on the stage plane) is calculated from the result of the ink jet test printing (step S33), and the temporarily set printing is performed. After correcting the start position (step S34), the pattern of the gate electrode 42 was printed (step S35). As a result, it was possible to form the gate electrode 42 having a good pattern with no ink protruding.

  Under the above conditions, an electrode array in which the gate electrodes 42 shown in FIG. At this time, no protrusion was observed in all the electrodes.

  Next, the fabricated gate electrode 42 is laminated on the electrode array in which 200 elements are arranged vertically and horizontally using the wettability changing material, aligned with the gate electrode 42, and the pattern of the source electrode 5a and the drain electrode 5b. Then, the alignment mark N2 having the same pattern as the alignment mark N1 provided when the gate electrode layer 42 was formed was exposed to ultraviolet rays. Next, the substrate 7 is set on the ink jet apparatus 100, and a dot pattern ink jet test print using the nano metal ink is performed on the alignment mark N2 with reference to the temporarily set print start position, and the amount of alignment position deviation is detected. Then, after correcting the temporarily set print start position based on the detection result, the inkjet printing of the wiring pattern of the source electrode 5a and the drain electrode 5b was performed. Finally, the semiconductor layer 6 was formed under the same conditions as in Example 3.

  The gate electrode 42 and the source / drain electrodes 5a and 5b are formed in a good shape without short-circuiting, and the gate lead line is connected to the driver IC for the scanning signal and the source lead line is connected to the driver for the data signal. When driven, the transistor corresponding to the data signal and the scanning signal could be driven.

Next, an electrophoretic element was bonded to the TFT array produced as described above under the same conditions as in Example 4 to produce a display device.
When this display device was operated by inputting a signal to each electrode, all the pixels showed good transistor characteristics, and thus a good image could be displayed.

  Although the present invention has been described with the embodiments shown in the drawings, the present invention is not limited to the embodiments shown in the drawings, and other embodiments, additions, modifications, deletions, etc. Can be changed within the range that can be conceived, and any embodiment is included in the scope of the present invention as long as the effects and advantages of the present invention are exhibited.

DESCRIPTION OF SYMBOLS 1 Laminated structure 2 Wettability change layer 2a Wettability change layer surface 3 High surface energy part 4 Low surface energy part 5 Conductive layer 5a, 5b A pair of electrode layer (source / drain electrode)
6 Semiconductor Layer 7 Substrate 8 Mask 11 Solid 12, d Droplet 42 Gate Electrode 51 Microcapsule 51a Titanium Oxide Particle 51b Isopar 52 Polycarbonate Substrate 53 Transparent Electrode 54 PVA Binder 71 First Material 72 Second Material 100 Inkjet Device 102 Stage 103 Inkjet head (head)
104 X-axis direction moving mechanism 105 Y-axis direction moving mechanism 106 Control device 107 X-axis direction drive shaft 108 X-axis direction drive motor 109 Y-axis direction drive shaft 110 Y-axis direction drive motor 200 Black matrix 222 Blue colored portion 223 Green colored portion 223 Colored portion 224 Red colored portion D1, D2, D3, D4, D5, D6, D7, D8, D9, D10 Dot line I Print region L Main chain L1, L2, L3, L4, L5, L6, L7, L8, L9, L10, La, Lb, Lc, Ld, Le, Lf, Lg, Lh, Li, LH High surface energy lines M, M ′, M ″, N Alignment mask R Side chain

JP 2006-108148 A JP-A-2005-310962 Japanese Patent Application Laid-Open No. 11-064626

Claims (9)

A wiring pattern is formed by discharging droplets of wiring ink from a head having a discharge nozzle onto a substrate having a wettability change layer in which a high surface energy region and a low surface energy region to be a wiring pattern are formed on the surface. A wiring pattern forming method for
On the wettability changing layer, an alignment mark is formed in which lines composed of the high surface energy region having a width corresponding to the landing width of the droplet discharged from the discharge nozzle are arranged in a stripe shape with a pitch q at a constant interval. And a process of
When discharging from the discharge nozzle so as to form a plurality of dot lines at a printing pitch p of an interval different from the pitch q with respect to the alignment mark, target landing points of predetermined dot lines in the plurality of dot lines The head and / or the substrate is scanned from a temporarily set print start position so that the center line coincides with the center line of the predetermined line of the alignment mark, and the ink for wiring is applied from the ejection nozzle to the alignment mark. A test printing step of ejecting droplets to print the plurality of dot lines;
The line of the alignment mark in which the center line of each of the dot lines and the alignment mark substantially coincides with each other from the protruding state of the wiring ink from the line of the alignment mark for each printing line based on each of the plurality of dot lines, and the line A detection step of detecting a position in the line array of
Based on the detection result, a printing position adjustment step for adjusting the printing start position;
A patterning step of printing a wiring pattern on the wettability changing layer by the head from the adjusted print start position;
A method of forming a wiring pattern having   2. The alignment mark line in which the dot line and the center line of each other substantially coincide with each other from the print line in which the wiring ink does not protrude from the alignment mark line in the detection step. A method of forming a wiring pattern.   In the detection step, the alignment in which the center line of the dot line substantially coincides with whether the protruding portion of the wiring ink from the alignment mark line in the printing line is in contact with the adjacent printing line or not. The wiring pattern forming method according to claim 1, wherein a mark line is specified.   4. The method according to claim 3, wherein it is determined whether or not the protruding portion of the wiring ink from the alignment mark line in the print line is in contact with the adjacent print line based on the presence or absence of electrical continuity between the adjacent print lines. Wiring pattern formation method. 5. The wiring pattern according to claim 3, wherein when the line width of the alignment mark is w and the landing droplet diameter of the wiring ink constituting the dot line is a, the relationship of the following formula (I) is satisfied. Forming method.
q-w <a <2q-w (I)   The method for forming a wiring pattern according to claim 1, wherein the surface energy of the low surface energy region is 30 mN / m or more.   The wiring pattern forming method according to claim 1, wherein a plurality of the alignment marks are formed on the wettability changing layer.   A transistor element substrate having a wiring pattern formed by the method for forming a wiring pattern according to claim 1.   A display device using the transistor element substrate according to claim 8.

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