JP5412765B2 - LAMINATED STRUCTURE, MULTILAYER WIRING BOARD, ACTIVE MATRIX SUBSTRATE, IMAGE DISPLAY DEVICE, AND LAMINATED STRUCTURE MANUFACTURING METHOD - Google Patents

Description

  The present invention relates to a laminated structure, a multilayer wiring board, an active matrix substrate, an image display device, and a manufacturing method of the laminated structure.

  The electrodes of a flat panel display such as a liquid crystal display device, a PDP (plasma display panel), and an organic EL (Electro Luminescence) display are formed in a predetermined pattern.

  As described above, a photolithography method is generally used as a method for forming electrodes or the like having a predetermined pattern. However, the photolithography method requires expensive equipment and needs to go through a number of processes, which increases the cost of the finished product.

  On the other hand, in recent years, attempts have been made to form electrodes and the like by a printing method in order to reduce manufacturing costs. Among such printing methods, the inkjet method is particularly promising because it does not require expensive equipment and does not waste material.

  However, since the inkjet method is a method of forming a pattern such as an electrode by droplets discharged from an ink nozzle, there are problems such as wetting and spreading of the solution supplied on the substrate and generation of a liquid pool of the solution. However, there is a limit to the miniaturization of patterns such as electrodes to be formed, and it has been difficult to form electrodes or the like with fine patterns by an ink jet method. For this reason, various methods of forming electrodes with a fine pattern by an ink jet method have been studied.

  In Patent Document 1, a method of forming a thin film pattern by disposing a functional liquid on a substrate, the step of forming a bank corresponding to the formation region of the thin film pattern on the substrate, and the extending direction of the bank. The thin film pattern is formed by performing a predetermined process on the functional liquid disposed between the banks and a step of discharging the functional liquid between the banks while scanning the plurality of arranged nozzles relative to the substrate. A method of forming is disclosed.

Further, in Patent Document 2, wiring material ink is dropped from a nozzle of an inkjet device into a groove formed following the gate wiring pattern and gate electrode pattern formed on the substrate, and the dropped wiring material ink flows in the groove. A substrate on which a gate wiring and a gate electrode are formed is disclosed.
JP 2004-330164 A JP 2006-208750 A

  However, the methods described in Patent Documents 1 and 2 have a problem that a number of processes are required to provide grooves and the like, resulting in an increase in cost. Further, in the method described in Patent Document 1, the formation time can be shortened in one specific direction, but it is not possible to deal with the direction perpendicular to this one direction, and it is practical. It had the problem of being scarce.

  The present invention has been made for such a problem, and is capable of forming a fine functional material pattern by a printing method such as an ink jet method in a short time, a multilayer structure, a multilayer wiring board, and an active matrix. A method for manufacturing a substrate, an image display device, and a laminated structure is provided.

The present invention provides a substrate, a wettability changing layer in which a high surface energy region and a low surface energy region are formed on the substrate, and a conductive material on the high surface energy region of the wettability changing layer. has a formed conductive layer, and the conductive layer, there is formed by discharging a liquid containing a conductive material while scanning the ink-jet head in the main scanning direction, the main of the ink-jet head In the high surface energy region serving as a conductive layer having a pattern extending in the sub- scanning direction perpendicular to the scanning direction, a droplet supply region of the high surface energy region extending in the main scanning direction of the inkjet head is formed. It is characterized by.

  In the present invention, the wettability changing layer includes a material whose critical surface tension is changed by applying energy and changes from a low surface energy state to a high surface energy state. A high surface energy region and a low surface energy region are formed by the application.

  Further, according to the present invention, the conductive layer having a pattern extending in the sub-scanning direction of the inkjet head causes the liquid containing the conductive material to be dropped from the inkjet head onto the droplet supply region, and the liquid is placed on the high surface energy region. It is formed by making it flow in.

  The conductive layer having a pattern extending in the sub-scanning direction may include both a component in the sub-scanning direction and a component in the main scanning direction.

  In addition, the present invention includes any one of the above-described stacked structures, and an interlayer insulating film for multilayering a conductive layer formed in the stacked structure.

  The present invention also includes a transistor having a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and a semiconductor layer, a gate signal line connected to the gate electrode, and substantially perpendicular to the gate signal line. And an active matrix substrate having a source signal line connected to the source electrode, and having the stacked structure described above, wherein the gate electrode, the source electrode, the drain electrode, the gate signal line, At least one of the source signal lines is formed of a conductive layer in the stacked structure.

  In the invention, it is preferable that the semiconductor layer is made of an organic semiconductor material.

  The present invention is characterized by comprising an image display element and the active matrix substrate described above.

Further, the present invention provides a step of forming a wettability changing layer containing a wettability changing material whose surface energy is changed by applying energy on the substrate, and applying the energy to the wettability changing layer, thereby providing a high surface. A step of forming an energy region; a solution containing a conductive material is dropped on a high surface energy region while scanning an inkjet head in a main scanning direction; And a step of forming the conductive layer by drying a solution containing the conductive material on the high surface energy region. It includes a region serving as the conductive layer is made of a liquid drop supply region, the droplet supply region, the main scanning of the inkjet head In the pattern area to be the conductive layer extending in the sub-scanning direction perpendicular to the direction, and characterized in that that extends in the main scanning direction of the inkjet head.

In the present invention, when the pitch in the sub-scanning direction of the inkjet head is P, at least a part of the pitch in the sub-scanning direction of the inkjet head in the droplet supply region is P / N (N is an integer) ).

  According to the present invention, a laminated structure, a multilayer wiring board, an active matrix substrate, an image display device, and a laminated structure capable of forming a fine functional material pattern by a printing method such as an inkjet method in a short time. A manufacturing method can be provided.

  Next, the best mode for carrying out the present invention will be described below.

[First Embodiment]
(Configuration of laminated structure)
A first embodiment according to the present invention will be described. The present embodiment is a laminated structure according to the present invention, and more specifically, a wiring board on which electric wiring is formed. Based on FIG. 1, the structure of the wiring board used as the laminated structure in this Embodiment is demonstrated.

  In the laminated structure in the present embodiment, the wettability changing layer 30 is formed on the substrate 20. The wettability changing layer 30 includes a wettability changing material whose surface energy changes when energy is applied. The surface has a high surface energy region 40 having a high surface energy and a low surface energy region having a low surface energy. 50 is formed.

  In the high surface energy region 40, as will be described later, the surface energy is lowered by contact with the solution containing the functional material. Therefore, the wettability to the solution containing the functional material is good, and the low surface energy region 50 is used. Then, the wettability with respect to the solution containing a functional material is bad. Therefore, a solution containing a conductive material can be selectively deposited on the high surface energy region 40, and thus the conductive layer 70 can be formed on the high surface energy region 40.

  Examples of the substrate 20 include substrates such as glass substrates, silicon substrates, stainless steel substrates, and film substrates. Among these, examples of the film substrate include a polyimide (PI) substrate, a polyethersulfone (PES) substrate, a polyethylene terephthalate (PET) substrate, and a polyethylene naphthalate (PEN) substrate.

  The wettability changing layer 30 is made of a material including a wettability changing material whose surface energy (critical surface tension) is changed by application of energy such as heat, electron beam, ultraviolet light, and plasma. As this wettability changing material, a polymer material having a hydrophobic group in the side chain can be used. Such a polymer material changes from an initial low energy surface (hydrophobic) to a high energy surface (hydrophilicity) by breaking the bond of the hydrophobic group by applying energy such as ultraviolet rays. Specifically, as will be described later, by exposing the surface of the wettability changing layer 30 with ultraviolet rays using a photomask having a predetermined pattern, the exposed region becomes the high surface energy region 40, A high surface energy region 40 and a low surface energy region 50 are formed on the surface of the wettability changing layer 30.

  Thus, by dropping a droplet of a solution containing a conductive material in the high surface energy region 40 by the ink jet method, the droplet spreads in the high surface energy region 40.

  In this way, the conductive layer 70 is formed on the high surface energy region 40 by drying the solution spreading in the high surface energy region 40 and volatilizing the solvent.

  In the present embodiment, the surface energy of the wettability changing layer may be changed by applying energy other than heat, electron beam, ultraviolet light, plasma, or the like. Specifically, the high surface energy region and the low surface energy region may be formed by surface processing or the like.

  Note that the above-described inkjet method is a method in which droplets are dropped from a plurality of nozzles in an inkjet apparatus having a droplet discharge head having a plurality of nozzles.

(Wettability change layer)
Next, the wettability changing layer 30 will be described with reference to FIG. The wettability changing layer 30 is composed of a film made of a material whose critical surface tension changes with the application of energy, and has at least two regions having different critical surface tensions. Specifically, it has a high surface energy region 40 having a large critical surface tension and a low surface energy region 50 having a small critical surface tension. Such a change in surface energy is performed by applying energy, and examples of the method for applying energy include ultraviolet irradiation and electron beam irradiation.

  The wettability changing layer 30 may be made of a single material or may be made of two or more kinds of materials. When composed of two or more types of materials, by mixing a material with a large change in wettability with a material that has a large change in wettability, it has excellent electrical insulation and excellent change in wettability. A wettability changing layer can be obtained.

  If a pattern such as electrical wiring has already been formed on the substrate, and another wiring pattern is formed on the substrate via an interlayer insulating layer, wettability with excellent electrical insulation is provided. It is effective to use a change layer. That is, since the wettability changing layer functions as an insulating layer, there is no need to provide a separate insulating layer. When the wettability changing layer is used as a gate insulating film of a thin film transistor (TFT), particularly high insulation is required.

  In addition, since it is possible to use a material that has a large change in wettability but has a problem in film formability, more materials can be selected. Specifically, when one material has a greater change in wettability but has a high cohesive force and is difficult to form a film, this material should be mixed with the other material with good film formability. Thus, the wettability changing layer can be easily produced.

  A schematic cross-sectional view of the wettability varying layer 30 of the present embodiment is shown in FIG. For example, a layer made of the second material 72 having a better wettability change than the first material 71 is formed on the layer made of the first material 71 having a higher electrical insulation than the second material 72. The structure is clearly separated and stacked.

  Such a structure can be produced by sequentially laminating a layer made of the second material 72 after producing a layer made of the first material 71. As a manufacturing method, a vacuum process such as vacuum vapor deposition can be used, or a coating process using a solvent can be used.

  Moreover, it is also possible to manufacture by applying a solution obtained by mixing the first material 71 and the second material 72 to the substrate and drying it. When the polarity of the second material 72 is relatively small or when the molecular weight is relatively small, the second material 72 moves to the surface side and forms a layer before the solvent evaporates during drying. To do. When the coating process is used, the layer made of the first material 71 and the layer made of the second material 72 are often not clearly separated by the interface, as shown in the schematic cross-sectional view of FIG.

  In the present embodiment, the first / second composition ratio of the first material 71 having relatively high electrical insulation and the second material 72 having relatively large wettability change is 50 by weight. / 50 to 99/1. As the weight ratio of the second material 72 increases, the electrical insulating property of the wettability changing layer 30 becomes lower and becomes unsuitable as an insulating layer of an electronic element. On the other hand, when the weight ratio of the first material 71 is increased, the wettability change is reduced, so that the patterning of the conductive layer is not good. Therefore, the mixing ratio between the two is desirably 60/40 to 95/5, and more desirably 70/30 to 90/10.

  As shown in the schematic cross-sectional view of FIG. 3, the layer made of the first material 71 and the layer made of the second material 72 may not be clearly separated by the interface. Further, as shown in FIG. 3 or FIG. 4, the first and second materials 71 and 72 may be mixed with a predetermined concentration distribution in the film thickness direction.

  When the wettability changing layer 30 is composed of two or more kinds of materials, it may have a laminated structure of two or more layers, and has a predetermined concentration distribution in the film thickness direction without having a layer structure. Materials may be mixed.

  As shown in the schematic plan view of FIG. 5, the wettability changing layer surface 30a on the side not in contact with the substrate is desirably formed of a surface in which the second material 72 is uniformly dispersed. However, if fine patterning is possible, the first material 71 is dispersed while the second material 72 is uniformly dispersed, as shown in the schematic plan view of FIG. As shown in the schematic diagram, the layers may be separated to form a so-called sea-island structure.

  The sea-island structure can be observed using an optical microscope, micro-infrared, or Raman spectroscopy. In particular, if the island structure has a diameter of about 5 μm, the material components are determined by micro-infrared spectroscopy. It is also possible to specify.

  The wettability changing layer 30 is desirably made of a polymer material having a hydrophobic group in the side chain. Specifically, as shown in the conceptual diagram of FIG. 8, the side chain R having a hydrophobic group directly or via a bonding group (not shown) on the main chain L having a skeleton such as polyimide or (meth) acrylate. Can be mentioned.

Examples of the hydrophobic group include groups having a terminal structure of —CF ₂ CH ₃ , —CF ₂ CF ₃ , —CF (CF ₃ ) ₂ , —C (CF ₃ ) ₃ , —CF ₂ H, —CFH _2, etc. Can be mentioned. In order to facilitate the orientation of molecular chains, a group having a long carbon chain length is preferable, and a group having 4 or more carbon atoms is more preferable. Furthermore, a polyfluoroalkyl group in which two or more of the hydrogen atoms of the alkyl group are substituted with fluorine atoms (hereinafter referred to as “Rf group”) is preferable, and an Rf group having 4 to 20 carbon atoms is particularly preferable. The Rf group having 6 to 12 carbon atoms is preferred. The Rf group may have a linear structure or a branched structure, but a linear structure is preferred. Further, the hydrophobic group is preferably a perfluoroalkyl group in which substantially all of the hydrogen atoms of the alkyl group are substituted with fluorine atoms. The perfluoroalkyl group is preferably a group represented by C _n F _{2n + 1} — (where n is an integer of 4 to 16), particularly preferably when n is an integer of 6 to 12. The perfluoroalkyl group may have a linear structure or a branched structure, and a linear structure is preferred.

  The above materials are well described in detail in JP-A-3-178478 and the like, and become lyophilic when brought into contact with a liquid or solid in a heated state and become lyophobic when heated in air. Have. That is, the critical surface tension can be changed by applying thermal energy (selecting the contact medium).

Furthermore, examples of the hydrophobic group include groups having a terminal structure such as —CH ₂ CH ₃ , —CH (CH ₃ ) ₂ , and —C (CH ₃ ) ₃ that do not contain a fluorine atom. Also in this case, in order to facilitate the orientation of molecular chains, a group having a long carbon chain length is preferable, and a group having 4 or more carbon atoms is more preferable. The hydrophobic group may have a linear structure or a branched structure, but a linear structure is preferred. The alkyl group may contain a halogen group, a cyano group, a phenyl group, a hydroxyl group, a carboxyl group, or a phenyl group substituted with a linear, branched or cyclic alkyl group having 1 to 12 carbon atoms or an alkoxy group. Good. It is considered that the more R binding sites, the lower the surface energy (the smaller the critical surface tension) and the more lyophobic. It is inferred that, due to ultraviolet irradiation or the like, a part of the bond is broken or the orientation state changes, so that the critical surface tension increases and becomes lyophilic.

In addition to this, examples of the hydrophobic group include an organosilicon group that can be represented by —SiR ₃ . Here, R is an organic group containing a siloxane bond.

  In consideration of forming a semiconductor layer on the wettability changing layer 30, the polymer material having a hydrophobic group in the side chain preferably includes polyimide. Since polyimide is excellent in solvent resistance and heat resistance, when a semiconductor layer is formed on the wettability changing layer 30, it does not swell or crack due to a temperature change caused by the solvent or baking.

  In the case where the wettability changing layer 30 is composed of two or more kinds of materials, considering heat resistance, solvent resistance and affinity, materials other than the polymer material having a hydrophobic group in the side chain are also made of polyimide. It is desirable to become.

  The hydrophobic group of the polyimide having a hydrophobic group in the side chain used in the present embodiment can have any of the structures represented by the following chemical formulas 1 to 5.

化１の化学式において、Ｘは−ＣＨ₂−又はＣＨ₂ＣＨ₂−であり、Ａ¹は１，４−シクロヘキシレン、１，４−フェニレン又は１〜４個のフッ素で置換された１，４−フェニレンであり、Ａ²、Ａ³及びＡ⁴は各々独立して単結合、１，４−シクロヘキシレン、１，４−フェニレン又は１〜４個のフッ素で置換された１，４−フェニレンであり、Ｂ¹、Ｂ²、Ｂ³は各々独立して単結合又はＣＨ₂ＣＨ₂−であり、Ｂ₄は炭素数1〜１０までのアルキレンであり、Ｒ³、Ｒ⁴、Ｒ⁵、Ｒ⁶、及びＲ⁷は各々独立して炭素数が１〜１０までのアルキルであり、ｐは１以上の整数である。

In the chemical formula of Chemical Formula 1, X is —CH ₂ — or CH ₂ CH ₂ —, and A ¹ is 1,4-cyclohexylene, 1,4-phenylene, or 1,4 substituted with 1 to 4 fluorines. -Phenylene, A ² , A ³ and A ⁴ are each independently a single bond, 1,4-cyclohexylene, 1,4-phenylene or 1,4-phenylene substituted with 1 to 4 fluorines. Each of B ¹ , B ² and B ³ is independently a single bond or CH ₂ CH ₂ —, B ₄ is alkylene having 1 to 10 carbon atoms, R ³ , R ⁴ , R ⁵ , R ⁶ and R ⁷ are each independently alkyl having 1 to 10 carbon atoms, and p is an integer of 1 or more.

化２の化学式において、Ｔ、Ｕ及びＶは各々独立してベンゼン環又はシクロヘキサン環であり、これらの環上の任意のＨは炭素数１〜３のアルキル、炭素数１〜３のフッ素置換アルキル、Ｆ、Ｃｌ又はＣＮで置換されていてもよく、ｍ及びｎは各々独立して０〜２の整数であり、ｈは０〜５の整数であり、ＲはＨ、Ｆ、Ｃｌ、ＣＮ又は１価の有機基であり、ｍが２の場合の２個のＵ又はｎが２の場合の２個のＶは各々同じでも異なっていても良い。

In the chemical formula of Chemical Formula 2, T, U and V are each independently a benzene ring or a cyclohexane ring, and any H on these rings is alkyl having 1 to 3 carbon atoms, fluorine-substituted alkyl having 1 to 3 carbon atoms. , F, Cl or CN, m and n are each independently an integer from 0 to 2, h is an integer from 0 to 5, and R is H, F, Cl, CN or In the case of a monovalent organic group and m is 2, two U's when n is 2 or two V's when n is 2 may be the same or different.

化３の化学式において、連結基ＺはＣＨ_２、ＣＦＨ、ＣＦ_２、ＣＨ_２ＣＨ_２又はＣＦ_２Ｏであり、環Ｙは１，４−シクロへキシレン又は１〜４個のＨがＦ又はＣＨ_３で置き換えられてもよい１，４−フェニレンであり、Ａ^１〜Ａ^３は各々独立して単結合、１，４−シクロへキシレン又は１〜４個のＨがＦ又はＣＨ^３で置き換えられてもよい１，４−フェニレンであり、Ｂ^１〜Ｂ^３は各々独立して単結合、炭素数１〜４のアルキレン、酸素原子、炭素数１〜３のオキシアルキレン又は炭素数１〜３のアルキレンオキシであり、ＲはＨ、任意のＣＨ_２がＣＦ_２で置き換えられてもよい炭素数１〜１０のアルキル、又は１個のＣＨ_２がＣＦ_２で置き換えられてもよい炭素数１〜９のアルコキシもしくはアルコキシアルキルであり、ベンゼン環に対するアミノ基の結合位置は任意の位置である。但し、ＺがＣＨ_２である場合には、Ｂ^１〜Ｂ^３の全てが同時に炭素数１〜４のアルキレンであることはなく、ＺがＣＨ_２ＣＨ_２であって、環Ｙが１，４−フェニレンである場合には、Ａ^１及びＡ^２がともに単結合であることはなく、また、ＺがＣＦ_２Ｏである場合には、環Ｙが１，４−シクロへキシレンであることはない。

In the chemical formula of Chemical Formula 3, the linking group Z is CH ₂ , CFH, CF ₂ , CH ₂ CH ₂ or CF ₂ O, and the ring Y is 1,4-cyclohexylene or 1-4 H are F or CH. 1,4-phenylene which may be replaced by ₃ , A ^{1 to} A ³ are each independently a single bond, 1,4-cyclohexylene or 1 to 4 H are replaced by F or CH ³ 1,4-phenylene, and B ^{1 to} B ³ are each independently a single bond, alkylene having 1 to 4 carbon atoms, oxygen atom, oxyalkylene having 1 to 3 carbon atoms, or 1 to 3 carbon atoms. Alkyleneoxy, R is H, alkyl having 1 to 10 carbon atoms in which arbitrary CH ₂ may be replaced with CF ₂ , or carbon atoms having 1 to 9 carbon atoms in which one CH ₂ may be replaced with CF ₂ Of alkoxy or alkoxyalkyl Binding position of the amino group to the Zen ring is an arbitrary position. However, when Z is CH ₂ , all of B ^{1 to} B ³ are not simultaneously alkylene having 1 to 4 carbon atoms, Z is CH ₂ CH ₂ , and ring Y is 1, 4 When -phenylene, both A ¹ and A ² are not a single bond, and when Z is CF ₂ O, ring Y is 1,4-cyclohexylene. Absent.

化４の化学式において、Ｒ２は水素原子又は炭素数１〜１２のアルキル基であり、Ｚ₁はＣＨ₂基であり、ｍは０〜２であり、環Ａはベンゼン環又はシクロヘキサン環であり、ｌは０又は１であり、各Ｙ₁は独立に酸素原子又はＣＨ₂基であり、各ｎ₁は独立に０又は１である。

In formula 4 of the formula, R2 is an alkyl group having 1 to 12 carbon hydrogen atom or a C, Z ₁ is CH ₂ group, m is 0 to 2, ring A is a benzene ring or a cyclohexane ring, l is 0 or 1, each Y ₁ is independently an oxygen atom or a CH ₂ group, and each n ₁ is independently 0 or 1.

化５の化学式において、各Ｙ₂は独立に酸素原子又はＣＨ₂基であり、Ｒ３、Ｒ４は独立に水素原子、炭素数１〜１２のアルキル基又はパーフルオロアルキル基であり、少なくとも一方は炭素数３以上のアルキル基、又はパーフルオロアルキル基であり、各ｎ₂は独立に０又は１である。

In the chemical formula of Chemical Formula 5, each Y ₂ is independently an oxygen atom or a CH ₂ group, R 3 and R 4 are independently a hydrogen atom, an alkyl group having 1 to 12 carbon atoms or a perfluoroalkyl group, at least one of which is carbon It is an alkyl group of 3 or more, or a perfluoroalkyl group, and each n ₂ is independently 0 or 1.

  Details of these materials are described in detail in Japanese Unexamined Patent Application Publication Nos. 2002-162630, 2003-96034, 2003-267982, 2004-86184, and the like. For the tetracarboxylic dianhydride constituting the main chain skeleton of the hydrophobic group, various materials such as aliphatic, alicyclic, and aromatic can be used. Specifically, pyromellitic dianhydride, cyclobutane tetracarboxylic dianhydride, cyclohexane tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, and the like. In addition, materials described in detail in JP-A-11-193345, JP-A-11-193346, JP-A-11-193347, and the like can also be used.

  As described above, the polyimide containing the hydrophobic group of the chemical formula shown in Chemical Formula 1 to Chemical Formula 5 may be used alone, or may be used by mixing with other materials. However, when mixed and used, considering the heat resistance, solvent resistance, and affinity, the material to be mixed is also preferably polyimide.

  Moreover, the polyimide containing the hydrophobic group which is not shown by the chemical formula of said chemical formula 1-chemical formula 5 can also be used.

  Specifically, it is a polyimide containing an aromatic diamine residue having a linear alkyl chain described in Japanese Patent No. 3097702.

  In view of the fact that the film forming process can be performed at a lower temperature, the polymer material having a hydrophobic group in the side chain preferably includes a soluble polyimide. Here, the soluble polyimide is a polyimide soluble in a solvent. A polyamic acid obtained by reacting a raw acid dianhydride and a diamine is obtained by chemical imidization treatment in a solution in advance. If the polyimide skeleton has a rigid structure, it is difficult to dissolve in a solvent. Therefore, bulky alicyclic cyclocarboxylic acid dihydrate is generally used in order to disturb the crystallinity of polyimide and make it easy to undergo solvation.

  It can be inferred from what kind of acid anhydride the polyimide is composed by analyzing characteristic group vibrations based on the infrared absorption spectrum of the polyimide thin film and measuring the ultraviolet-visible absorption spectrum. In a polyimide thin film having a bulky alicyclic cyclocarboxylic acid dihydrate skeleton, the absorption edge wavelength is 300 nm or less. For details, see Ikuo Imai, Rikio Yokota, edited by Japan Polyimide Research Group, “Latest Polyimides: Fundamentals and Applications”, published by NTS Corporation, 2002, “Electronics and Electronic Materials for Next Generation” "Development of new polyimide for high performance and high functional technology", published by Technical Information Association, Inc., 2003.

  Since the polyimide is dissolved in the solvent, the film can be formed at a temperature at which the solvent is evaporated, that is, at a low temperature of 200 ° C. or lower. In addition, unreacted polyamic acid and acid anhydrides of side reaction products do not remain in the polyimide thin film, and problems such as poor electrical characteristics of the polyimide film due to these impurities are unlikely to occur.

  Soluble polyimides are not soluble in any solvent, but are only soluble in certain highly polar solvents such as γ-butyllactone, N-methylpyrrolidone, N, N-dimethylacetamide and the like. Therefore, when a low-polarity solvent such as toluene, xylene, acetone, or isopropyl alcohol is used when forming the semiconductor layer on the wettability changing layer 30, the thin film containing soluble polyimide is eroded by the solvent. Absent.

  In the case where the wettability changing layer 30 is composed of two or more kinds of materials, it is desirable that materials other than the soluble polyimide having a hydrophobic group in the side chain are also made of a soluble material. As a result, the film can be formed at a low temperature. Furthermore, it is desirable that the material exhibits good compatibility with soluble polyimide. As a result, phase separation hardly occurs in a solvent, which is optimal for a film forming process.

  The soluble material does not need to be an organic material, and a compound of an organic material and an inorganic material can be used. Examples thereof include phenol resins such as polyvinylphenol, melamine resins, polysaccharides such as pullulan subjected to acetylation treatment, silsesquioxane, and the like.

  In addition, if the material other than the soluble polyimide having a hydrophobic group in the side chain is also made of soluble polyimide, it is preferable in terms of heat resistance, solvent resistance, and affinity.

  The hydrophobic group of the soluble polyimide having a hydrophobic group in the side chain used in the present embodiment can have a structure represented by the chemical formula of the following chemical formula 6, for example.

式中、Ｒ¹は炭素数１〜１２のアルキル基、炭素数１〜１２のハロアルキル基又はハロゲン原子であり、Ｘ、Ｙは互いに独立に下記化７の化学式中の（ａ）〜（ｄ）で表わされる２価の結合基であり、ａは１〜５の整数である。

In the formula, R ¹ is an alkyl group having 1 to 12 carbon atoms, a haloalkyl group having 1 to 12 carbon atoms, or a halogen atom, and X and Y are each independently (a) to (d) in the chemical formula of the following formula 7. And a is an integer of 1 to 5.

この材料についての詳細は、例えば特開平９−２７２７４０号公報に記載されている。

Details of this material are described in, for example, JP-A-9-272740.

  Moreover, it is also possible to make the polyimide made of the material represented by the chemical formulas of Chemical Formulas 1 to 5 solubilized by an appropriate chemical treatment. A method for using these materials as soluble polyimide is described in International Publication WO01 / 000732.

  In addition, although the example of the diamine compound which gives the residue which has a side chain group was given above, it is also possible for tetracarboxylic acids to give the residue which has a side chain group.

  As another effect that the side chain R having a hydrophobic group is arranged on the surface, the interface property with the semiconductor layer 6 in contact with the side chain R can be improved. When the semiconductor layer 6 is made of an organic semiconductor, the effect is more remarkable. Good interface properties include: a. If the semiconductor is crystalline, the crystal grains become larger and the mobility increases; b. If the semiconductor is amorphous (polymer), the interface state density decreases and the mobility increases; c. When the semiconductor is a polymer and has a side chain such as a long-chain alkyl group, the orientation of the semiconductor is regulated so that the molecular axes of the π-conjugated main chain can be arranged in almost one direction, and the mobility is This refers to the appearance of a phenomenon such as an increase.

  The thickness of the wettability changing layer 30 in the present embodiment is preferably 30 nm to 3 μm, and more preferably 50 nm to 1 μm. If it is thinner than this, properties (insulating properties, gas barrier properties, moisture resistance, etc.) as a bulk body are impaired, and if it is thicker than this, the surface shape deteriorates, which is not preferable.

(Conductive layer)
The conductive layer 70 is preferably a layer obtained by solidifying a liquid containing a conductive material by heating, ultraviolet irradiation, or the like. In addition, the liquid containing a conductive material is
1 Dissolving conductive material in solvent,
2 Conductive material precursor or precursor dissolved in solvent,
3 Dispersing conductive material particles in a solvent,
4 Dispersing precursor particles of conductive material in a solvent,
Say etc. More specifically, conductive particles in which fine metal particles such as Ag, Au, and Ni are dispersed in an organic solvent or water, or doped PANI (polyaniline) or PEDOT (polyethylenedioxythiophene) are doped with PSS (polystyrene sulfonic acid). Examples thereof include an aqueous solution of a polymer.

  As a method for applying a solution containing a conductive material to the surface of the coatability changing layer 30, various coating methods such as a spin coating method, a dip coating method, a screen printing method, an offset printing method, and an ink jet method can be used. In particular, in order to be easily affected by the surface energy of the wettability changing layer 30, an ink jet method capable of supplying a solution with small droplets is preferable. As will be described later, when a normal liquid discharge head of a level used in a printer is used, the resolution of the ink jet method is 30 μm and the alignment accuracy is about ± 15 μm. By utilizing the difference, it becomes possible to form a finer pattern.

  In addition, as a method of imparting energy to a part of the wettability changing layer 30, a. Can be operated in air; b. High resolution is obtained, c. A method using ultraviolet irradiation is preferable from the viewpoint of little damage to the inside of the layer.

(Inkjet device)
Next, an ink jet apparatus used for forming the conductive layer 70 which becomes an electrode of the wiring board which is the laminated structure in the present embodiment will be described.

  FIG. 9 shows an inkjet apparatus used in this embodiment. An ink jet apparatus 100 used in the present embodiment is connected to a surface plate 1, a stage 2, a droplet discharge head 3, an X-axis direction moving mechanism 4 connected to the droplet discharge head 3, and the stage 2. And a Y-axis direction moving mechanism 5 and a control device 6.

  The stage 2 is provided for the purpose of supporting the substrate S, and includes a fixing mechanism such as an adsorption mechanism (not shown) that adsorbs the substrate S. Moreover, you may provide the heat processing mechanism for drying the functional material containing liquid dripped on the board | substrate S. FIG.

  The droplet discharge head 3 is a head including a plurality of discharge nozzles, and the plurality of discharge nozzles are arranged on the lower surface of the droplet discharge head 3 at regular intervals along the X-axis direction. A droplet of the functional material-containing liquid is discharged from the discharge nozzle onto the substrate S supported by the stage 2. For example, a piezo method can be used as a droplet discharge mechanism of the droplet discharge head 3. In this case, a droplet is discharged by applying a voltage to a piezo element in the droplet discharge head 3.

  The X-axis direction moving mechanism 4 includes an X-axis direction drive shaft 7 and an X-axis direction drive motor 8. The X-axis direction drive motor 8 is a stepping motor or the like, and when a drive signal in the X-axis direction is supplied from the control device 6, the X-axis drive shaft 7 is operated and the droplet discharge head 3 moves in the X-axis direction. .

  The Y-axis direction moving mechanism 5 includes a Y-axis direction drive shaft 9 and a Y-axis direction drive motor 10. The Y-axis direction moving mechanism 5 is for moving in the Y-axis direction orthogonal to the plane orthogonal to the X-axis. When a drive signal in the X-axis direction is supplied from the control device 6, the stage 2 moves in the Y-axis direction.

  The control device 6 supplies a discharge control signal to the droplet discharge head 3. Further, a drive signal in the X-axis direction is supplied to the X-axis direction drive motor 8, and a drive signal in the Y-axis direction is supplied to the Y-axis direction drive motor 10, respectively. The control device 6 is connected to the droplet discharge head 3, the X-axis direction drive motor 8, and the Y-axis direction drive motor 10, respectively, but the wiring thereof is not shown.

  The inkjet apparatus 100 discharges droplets of the functional material-containing liquid onto the substrate S fixed on the stage 2 while relatively scanning the droplet discharge head 3 and the stage 2. A rotating mechanism that operates independently of the X-axis direction moving mechanism 4 may be provided between the droplet discharge head 3 and the X-axis direction moving mechanism 4. By operating the rotation mechanism and changing the relative angle between the droplet discharge head 3 and the stage 2, the pitch between the discharge nozzles can be adjusted. Further, a Z-axis direction moving mechanism that operates independently of the X-axis direction moving mechanism 4 may be provided between the droplet discharge head 3 and the X-axis direction moving mechanism 4. By moving the droplet discharge head 3 in the Z-axis direction, the distance between the substrate S and the nozzle surface can be arbitrarily adjusted. A rotation mechanism that operates independently of the Y-axis direction moving mechanism 5 may be provided between the stage 2 and the Y-axis direction moving mechanism 5. By operating the rotation mechanism, it is possible to discharge droplets onto the substrate S in a state where the substrate S fixed on the stage 2 is rotated at an arbitrary angle.

(High surface energy region pattern)
Next, the pattern of the high surface energy region 40 in the present embodiment will be described. As described above, the high surface energy region 40 is formed by applying energy such as ultraviolet rays to a predetermined region of the wettability changing layer 30. The conductive layer 70 is formed on the high surface energy region 40 by dropping droplets of a solution containing a conductive material with a liquid discharge head.

  By the way, in the ink jet system using this droplet discharge head, the scanning direction (main scanning direction) of the droplet discharging head and the vertical direction (sub-scanning direction) can be controlled independently. The resolution in the scanning direction (main scanning direction) of the droplet discharge head can be increased to v / f determined by the maximum drive frequency f of the droplet discharge head and the scanning speed v, and the scanning speed v can be adjusted. Thus, it is possible to set an arbitrary resolution. Therefore, it is possible to improve the resolution relatively easily.

  On the other hand, in the direction perpendicular to the scanning direction of the droplet discharge head (sub-scanning direction), the droplet discharge head is moved by the relative movement of the droplet discharge head in the sub-scanning direction for each scan. Is called. Therefore, if an attempt is made to improve the resolution in the sub-scanning direction, it is necessary to perform it every time it is scanned, and a great deal of time is required. In particular, this becomes more prominent as the pattern becomes finer, and more time is required as the pattern becomes finer.

  In FIG. 10, the shape of the high surface energy area | region 40 for forming the laminated structure in this Embodiment is shown.

  In the high surface energy region 40 where the conductive layer 70 is formed in the present embodiment, droplets are continuously applied from the droplet discharge head 3 to the pattern of the wiring region 41 extending in the sub-scanning direction of the droplet discharge head 3. In this configuration, a droplet supply region 42 composed of a high surface energy region 40 to be dropped is extended and provided. As a result, the solution dropped into the droplet supply region 42 flows into the wiring region 41 having the same high surface energy and spreads over the whole, and the conductive layer 70 is formed in a short time even if the wiring region 41 has a fine structure. be able to.

The droplet discharge head 3 can be finely moved every main scan in the sub-scanning direction. When the pitch of the nozzles arranged in the sub-scanning direction of the droplet discharge head 3 is P, the liquid discharge head 3 By providing the droplet supply region 42 with P / N (N: integer), it is possible to spread a solution containing a conductive material over the entire wiring region 41. (In FIG. 10, the case where N is 2 is shown.)
Next, a method for forming the conductive layer 70 of the multilayer structure in the present embodiment will be described with reference to FIG.

  First, as shown in FIG. 11A, the droplet discharge head 3 discharges the droplet 34 while moving upward in the drawing. Specifically, the droplet discharge head 3a that initially exists at the position indicated by the broken line moves upward and moves to the position of the droplet discharge head 3 indicated by the solid line. When the droplet discharge head 3 moves, the droplet 34 is dropped on the high surface energy region 40 from each nozzle 33. In the pattern of the high surface energy region 40 extending in the head scanning direction (main scanning direction), the droplet discharge head 3 continuously moves while the droplet 34 is discharged from the nozzle 33, thereby forming a fine pattern. Even if it exists, it is possible to supply the droplet 34 easily. On the other hand, in the pattern of the high surface energy region 40 extending in the direction perpendicular to the head scanning direction (sub-scanning direction), droplets are ejected at intervals of the pitch P between the nozzles 33 in the droplet ejection head 3. Therefore, there is a region where no droplets are dropped between the nozzles 33, and a solution containing a conductive material is insufficient, so that a sufficiently functioning conductive layer 70 cannot be obtained. For this reason, in the present embodiment, a droplet supply region 42 is provided, and a large number of droplets are continuously dropped onto the droplet supply region 42, whereby the solution dropped onto the droplet supply region 42 is removed. It is possible to extend the wiring area 41 extending in the sub-scanning direction.

  As described above, by providing the droplet supply region 42, it is possible to continuously drop a large number of droplets while moving the droplet discharge head 3 in the scanning direction. When there is no such droplet supply region 42, the dropped droplet overflows from the high surface energy region 40 and a conductive layer having a desired shape is not formed, or the droplet discharge head 3 moves in the scanning direction. In some cases, sufficient droplets are not supplied.

  Next, as shown in FIG. 11B, the droplet discharge head 3 is moved in the sub-scanning direction perpendicular to the scanning direction. This moving distance is P / N (N: integer), where P is the nozzle pitch in the sub-scanning direction of the droplet discharge head 3. In this figure, since N is 2, this moving distance is P / 2, but this moving distance is determined by the position where the droplet supply region 42 is provided.

  Next, as shown in FIG. 11C, the droplet discharge head 3 discharges the droplet 34 while moving downward in the drawing. Specifically, initially, the droplet discharge head 3b existing at the position indicated by the broken line moves downward and moves to the position of the droplet discharge head 3 indicated by the solid line. During the movement of the droplet discharge head 3, the droplet 34 is dropped on the high surface energy region 40 from each nozzle 33. Although not shown, in the pattern of the high surface energy region 40 extending in the head scanning direction (main scanning direction), the droplet discharge head 3 continuously discharges the droplets 34 from the nozzles 33 while moving. Even with a fine pattern, the droplets 34 can be easily supplied. On the other hand, in the pattern of the high surface energy region 40 extending in the direction perpendicular to the head scanning direction (sub-scanning direction), droplets are ejected at intervals of the pitch P between the nozzles 33 in the droplet ejection head 3. Therefore, there is a region where no droplets are dropped between the nozzles 33, and a solution containing a conductive material is insufficient, so that a sufficiently functioning conductive layer 70 cannot be obtained. For this reason, it is possible to spread the solution dropped on the droplet supply region 42 to the wiring region 41 extending in the sub-scanning direction by dripping a large number of droplets continuously into the droplet supply region 42.

  In this manner, droplets are dropped while moving the droplet discharge head 3 in the scanning direction, and after the movement in the scanning direction is completed, the droplet discharge head 3 is moved in the sub-scanning direction by the moving distance P / N. Then, the operation of dropping droplets is repeated while moving the droplet discharge head 3 in the scanning direction again. Thereby, the solution containing the conductive material can be spread over the entire pattern of the high surface energy region 40 extending in the sub-scanning direction, and the conductive layer 70 having a uniform film thickness can be formed.

  Next, the relationship between the conductive layer 70 to be formed and the amount of the solution discharged from the nozzle 33 of the droplet discharge head 3 will be described with reference to FIGS.

  FIG. 12 shows a high surface energy region 40 having a pattern extending in the sub-scanning direction when the value of N is 3 and the droplet discharge head 3. FIG. 13 is an enlarged view of the vicinity of the droplet supply region 42. The pitch of the nozzles 33 of the droplet discharge head 3 is P, and the droplet supply region 42 extends to the wiring region 41 and is provided at a pitch of P / N (P / 3 in this figure). Yes. The number of droplets 34 required to form the conductive layer 70 in the entire wiring region 41 depends on the width L of the wiring region 41 and the pitch P / N of the provided droplet supply region 42. When the number of droplets 34 necessary for forming the conductive layer 70 in the wiring region 41 is m and the diameter of the droplet 34 upon landing is a, the droplet discharge head 3 is moved in the scanning direction at a moving speed v. When the droplet 34 is supplied while being moved, the sum of the length MA of the droplet supply region 42 and the width L of the wiring region 41, that is, (MA + L) is a + m · (v / f). It is necessary to be above. In this case, the width MB of the droplet supply region 42 is a or more.

  Next, based on FIG. 14, the shape of the high surface energy area | region 40 used as the conductive layer 70 in the laminated structure in this Embodiment is demonstrated. FIG. 14 shows a case where the value of N is 2.

  In the present embodiment, as shown in FIG. 14A, the wiring region 41 has a shape including both a component in the main scanning direction that is the scanning direction of the droplet discharge head 3 and a component in the sub-scanning direction. There may be. By providing the droplet supply region 42 extending in the scanning direction in the wiring region 41 having the component in the sub-scanning direction, the droplet 34 supplied to the droplet supply region 42 spreads over the entire wiring region 41 and the conductive layer. This is because 70 can be formed.

  Further, as shown in FIG. 14B, a configuration may be adopted in which the droplet supply region 42 is provided so as to extend in both sides of the wiring region 41, that is, in the main scanning direction that is up and down in the drawing. With such a configuration, the solution supplied to the droplet supply region 41 can be more smoothly spread over the entire wiring region 41.

  On the other hand, as shown in FIG. 15, the nozzles 33 of the droplet discharge heads 3 can be arranged in a staggered manner. By arranging in a zigzag manner in this way, the pitch P when ejecting droplets can be reduced.

  Further, as shown in FIG. 16, the droplet discharge head 3 is installed in an inclined state with respect to the scanning direction (main scanning direction) of the droplet discharge head 3 to discharge the droplets. It is possible to eject the droplets 34 at a pitch PA narrower than the pitch P.

Furthermore, as shown in FIG. 17, the pitch PB or the droplet discharge head 3 in which the nozzles 33 are arranged in a staggered manner is tilted in the same manner as in FIG. It is possible to drop droplets with the pitch PC. In this case, the overall density becomes higher than that of the actual pitch P of the nozzles 33. Second Embodiment
The second embodiment relates to an active matrix substrate and an image display device.

  Based on FIG. 18, the active matrix substrate in the present embodiment will be described. FIG. 18A is a top view showing the configuration of the wiring of the active matrix substrate in the present embodiment, and FIG. 18B is a cross-sectional view taken along the broken line 18A-18B in FIG. FIG. 18 (c) is a partially enlarged view of FIG. 18 (a).

  In the active matrix substrate in the present embodiment, the first wettability changing layer 120 is formed on the substrate 110, and the surface of the first wettability changing layer 120 is irradiated with ultraviolet light or the like to be exposed. A surface energy region is formed. A droplet of a solution containing a conductive material is dropped on the high surface energy region by using a droplet discharge head, and then dried to form the gate electrode 130 and the gate signal line 131. The gate signal line 131 is for connecting the individual gate electrodes 130 in the vertical direction in the drawing.

  Next, a second wettability changing layer 140 is formed on the gate electrode 130 and the gate signal line 131, and the surface of the second wettability changing layer 140 is exposed with ultraviolet light or the like, so that a high surface is obtained. Form an energy region. A droplet of a solution containing a conductive material is dropped on the high surface energy region by using a droplet discharge head, and then dried to form the drain electrode 150, the source electrode 160, and the source signal line 161. The source signal line 161 is for connecting the individual source electrodes 160 in the horizontal direction in the drawing. Since the first wettability changing layer 120 has a high insulating property and has a function as a gate insulating film, it may be referred to as a gate insulating film.

  Next, the semiconductor layer 170 is formed over the gate electrode 130 with the gate insulating film 131 interposed therebetween, in contact with the drain electrode 150 and the source electrode 160, and in an island shape therebetween. Thus, individual transistors are formed, and the active matrix substrate in this embodiment is manufactured.

  The semiconductor material constituting the semiconductor layer 170 includes inorganic semiconductor materials such as CdSe, CdTe, and Si, organic low molecules such as pentacene, anthracene, tetracene, and phthalocyanine, polyacetylene conductive polymers, polyparaphenylene, and the like. Derivatives, polyphenylene-based conductive polymers such as polyphenylene vinylene and its derivatives, polypyrrole and its derivatives, polythiophene and its derivatives, heterocyclic conductive polymers such as polyfuran and its derivatives, ionic properties such as polyanialine and its derivatives An organic semiconductor such as a conductive polymer can be used.

  The gate electrode 130 of each transistor is connected to a scanning signal driver IC (not shown) for driving the active matrix substrate via a gate signal line 131, and the source electrode 160 of each transistor is connected to the gate electrode 130. A source signal line 161 is connected to a data signal driver IC (not shown) for driving the active matrix substrate. Therefore, the gate signal line 131 and the source signal line 161 need to be formed with leading portions outside the transistors in the active matrix substrate.

  Therefore, when the gate signal line 131 is formed, a high surface energy region including the gate wiring region 132 and the gate droplet supply region 133 is formed particularly in the lead portion, and a solution containing a conductive material is formed on these regions. It is dripped. At this time, by dropping a droplet of a solution containing a conductive material into the gate droplet supply region 133, it is possible to easily form the gate signal line 131 having a horizontal component in the drawing in a short time. . Note that the gate signal line 131 of the vertical component can be formed in a short time because this direction is the main scanning direction.

  On the other hand, when the source signal line 161 is formed, a high surface energy region composed of the source wiring region 162 and the gate droplet supply region 163 is formed particularly in the lead portion, and a solution containing a conductive material is formed on these regions. It is dripped. At this time, by dropping a droplet of a solution containing a conductive material into the gate droplet supply region 163, it is possible to easily form the gate signal line 161 having a lateral component in the drawing in a short time. . Note that the gate signal line 161 of the vertical component can be formed in a short time because this direction is the main scanning direction.

  In this embodiment, when forming both the gate electrode 130 and the gate signal line 131 and the source electrode 160 and the source signal line 161, the wettability changing layers 120 and 140 are used as a base. A configuration using may be used.

  Note that although the active matrix substrate in this embodiment mode is not illustrated in order to prevent deterioration of transistor characteristics due to oxygen, moisture, radiation, or the like, it is preferable to cover the whole with a passivation film.

  Specifically, as the passivation film used at this time, aluminum nitride, silicon nitride, silicon nitride oxide, or the like is used. Moreover, as a formation method of these films, a formation method by CVD, ion plating, sputtering, or the like can be given.

  As described above, the active matrix substrate in this embodiment can be easily manufactured in a short time, and the throughput in manufacturing can be improved.

  Next, the image display apparatus in the present embodiment will be described. As shown in FIG. 19, the image display device in this embodiment is formed by laminating display elements on the above-described active matrix substrate.

  An interlayer insulating film 180 is formed on the active matrix substrate described above, a through hole for connecting to the drain electrode 150 is formed in the interlayer insulating film 180, the through hole is filled with a metal material, and electrically connected to the drain electrode 150. A lower electrode 190 to be connected is formed on the surface of the interlayer insulating film 180. The lower electrode 190 is for displaying an image and serves as an electrode of a display element. Further, a layer 200 serving as a display element, an upper electrode 210, and an upper substrate 220 are laminated thereon.

  In the image display device according to the present embodiment, as a display element, a display element such as TN, STN, guest-host type liquid crystal, polymer dispersed liquid crystal (PDLC), in a cell or in a microcapsule Examples thereof include an electrophoretic element that performs display by movement of sealed colored particles, and a light-emitting display element that includes an organic EL (Electro Luminescence).

  As described above, the image display device in this embodiment can be easily manufactured in a short time, and the throughput in manufacturing can be improved.

Example 1
Example 1 relates to the laminated structure according to the first embodiment. Specifically, the wettability changing layer 30 is formed on the glass substrate that becomes the substrate 20 having the structure shown in FIG. 1, and the conductive layer 70 is further formed. The wettability changing layer 30 was formed by applying a mixed solution in which a precursor that becomes a structure represented by the chemical formulas of Chemical Formulas 8 and 9 was applied by a spin coating method and firing at 280 ° C.

この濡れ性変化層の紫外線照射量と水に対する接触角の関係を図２０に示す。未照射時には、接触角が９０°を超えて疎水性（撥水性）であるが、紫外線の照射量が１０Ｊ／ｃｍ^２以上では、２０°程度に低下し親水性に変化している。この変化を誘発するために効果のある光の波長を合わせた光源を用いることにより照射量をさらに小さくすることが可能であるものと考えられる。

FIG. 20 shows the relationship between the UV irradiation amount of this wettability changing layer and the contact angle with water. When not irradiated, the contact angle exceeds 90 ° and is hydrophobic (water repellency). However, when the irradiation amount of ultraviolet rays is 10 J / cm ² or more, the contact angle decreases to about 20 ° and changes to hydrophilic. It is considered that the amount of irradiation can be further reduced by using a light source having a wavelength of light that is effective for inducing this change.

  FIG. 21 shows the relationship between the surface tension of the liquid and the contact angle on the wettability changing layer. From this figure, it is understood that the critical surface tension is about 24 mN / m when the ultraviolet rays are not irradiated, and about 45 mN / m when the ultraviolet rays are irradiated.

Next, using a photomask on which a pattern of a high surface energy region was formed, ultraviolet light having a wavelength of 250 nm was irradiated at 8 mJ / cm ² to form the high surface energy region 40. As shown in FIG. 10, this photomask pattern has a configuration in which a droplet supply region 42 is provided. The width L of the wiring region 41 is 30 μm, the length MA in the droplet supply region 42 is 20 μm, the width MB is 30 μm, and the pitch P / N of the formed droplet supply region 42 is 254 μm.

  On the other hand, the pitch P of the nozzles of the droplet discharge head of the ink jet apparatus is 254 μm (thus, the value of N is 1). Using this droplet discharge head, a droplet having a droplet volume of 4 pL was discharged from a nozzle. The solution constituting the droplet is a solution containing a conductive material, and specifically, a silver nanometal ink having a solid content concentration of 20 wt%.

  The droplets of the silver nanometal ink were dropped while the droplet discharge head moved once in the scanning direction. The resolution in the scanning direction of the droplet discharge head is 4800 dpi (pitch 5.3 μm), and four droplets are dropped on the high surface energy region 40 where the droplet supply region 42 is provided. The solution spreads wet across 41. Thereafter, the solvent of the solution containing the conductive material was volatilized to form the conductive layer 70 having a film thickness of 45 nm. In this embodiment, the conductive layer 70 extending perpendicularly to the scanning direction could be formed only by scanning the droplet discharge head once in the scanning direction.

(Comparative Example 1)
Comparative Example 1 has a configuration in which the high surface energy region 40 not provided with the droplet supply region 42 shown in FIG. In order to obtain a conductive layer 70 equivalent to that in Example 1 using the same droplet discharge head and silver nanometal ink in the same process as in Example 1, four droplets are formed at the same point in the high surface energy region. Needed to be dripped. Therefore, in order to form a conductive layer extending perpendicular to the scanning direction, the droplet discharge head needs to scan four times in the scanning direction.

(Example 2)
Example 2 relates to the laminated structure according to the first embodiment. In Example 2, the conductive layer 70 was formed by the same process as in Example 1. The width L of the wiring region 41 is 30 μm, the length MA in the droplet supply region 42 is 20 μm, the width MB is 30 μm, and the pitch P / N of the formed droplet supply region 42 is 127 μm.

  On the other hand, the nozzle pitch P of the droplet discharge head of the ink jet apparatus is 254 μm (therefore, the value of N is 2). Using this droplet discharge head, a droplet having a droplet volume of 4 pL was discharged from a nozzle. The solution constituting the droplet is a solution containing a conductive material, and specifically, a silver nanometal ink having a solid content concentration of 20 wt%.

  The droplets of the silver nanometal ink were dropped while the droplet discharge head moved twice in the scanning direction. The resolution in the scanning direction of the droplet discharge head is 4800 dpi (pitch 5.3 μm), and four droplets are dropped on the high surface energy region 40 where the droplet supply region 42 is provided. The solution spreads wet across 41. Thereafter, the conductive layer 70 having a thickness of 80 nm was formed by volatilizing the solvent of the solution containing the conductive material. In this embodiment, the thick conductive layer 70 extending perpendicularly to the scanning direction could be formed only by scanning the droplet discharge head twice in the scanning direction.

(Example 3)
Example 3 relates to the laminated structure according to the first embodiment. In Example 3, the conductive layer 70 was formed by the same process as in Example 1. The width L of the wiring region 41 is 30 μm, the length MA in the droplet supply region 42 is 6 μm, the width MB is 30 μm, and the pitch P / N of the formed droplet supply region 42 is 86.7 μm.

  On the other hand, the pitch P of the nozzles of the droplet discharge head of the ink jet apparatus is 86.7 μm (thus, the value of N is 1). Using this droplet discharge head, a droplet having a droplet volume of 4 pL was discharged from a nozzle. The solution constituting the droplet is a solution containing a conductive material, and specifically, a silver nanometal ink having a solid content concentration of 20 wt%.

  The droplets of the silver nanometal ink were dropped while the droplet discharge head moved once in the scanning direction. The resolution in the scanning direction of the droplet discharge head is 4800 dpi (pitch 5.3 μm), and two droplets are dropped on the high surface energy region 40 where the droplet supply region 42 is provided. The solution spreads wet across 41. Then, the conductive layer 70 with a film thickness of 70 nm was formed by volatilizing the solvent of the solution containing a conductive material. In this embodiment, the thick conductive layer 70 extending perpendicularly to the scanning direction could be formed only by scanning the droplet discharge head once in the scanning direction.

Example 4
Example 4 relates to the active matrix substrate in the second embodiment. In Example 4, an active matrix substrate having the configuration shown in FIG. 18 was produced. Specifically, the wettability changing layer 120 made of the material shown in Example 1 is formed on the substrate 110, and a photomask having a shape pattern of the gate electrode 130 and the gate signal line 131 in FIG. A high surface energy region having the shape of the gate electrode 130 and the gate signal line 131 was formed by irradiating ultraviolet light having a wavelength of 250 nm with 8 mJ / cm ² . The width L1 of the gate wiring region 132 in the high surface energy region to be the gate signal line 131 is 30 μm, the length MA1 in the gate droplet supply region 133 is 6 μm, and the width MB1 is 30 μm. The pitch P / N of 133 is 86.7 μm.

  On the other hand, the pitch P of the nozzles of the droplet discharge head of the ink jet apparatus is 86.7 μm (thus, the value of N is 1). Using this droplet discharge head, a droplet having a droplet volume of 4 pL was discharged from a nozzle. The solution constituting the droplet is a solution containing a conductive material, and specifically, a silver nanometal ink having a solid content concentration of 20 wt%.

  The droplets of the silver nanometal ink were dropped while the droplet discharge head moved once in the scanning direction. The resolution in the scanning direction of the droplet discharge head is 4800 dpi (pitch 5.3 μm), and droplets are dropped on the high surface energy region where the gate droplet supply region 133 is provided. The solution spreads wet throughout. Thereafter, the solvent of the solution containing the conductive material was volatilized, whereby the gate electrode 130 and the gate signal line 131 were formed by scanning the droplet discharge head once in the scanning direction.

Next, the wettability changing layer 140 is formed of the same material as that constituting the wettability changing layer 120, and a photomask having a shape pattern of the drain electrode 150, the source electrode 160, and the source signal line 161 in FIG. The ultraviolet ray having a wavelength of 250 nm was used and irradiated with 8 mJ / cm ² to form a high surface energy region in the shape of the drain electrode 150, the source electrode 160 and the source signal line 161. The source line region 162 of the high surface energy region to be the source signal line 161 has a width L2 of 30 μm, a length MA2 in the source droplet supply region 163 of 6 μm, and a width MB2 of 30 μm. The pitch P / N of 163 is 86.7 μm.

  On the other hand, the pitch P of the nozzles of the droplet discharge head of the ink jet apparatus is 86.7 μm (thus, the value of N is 1). Using this droplet discharge head, a droplet having a droplet volume of 4 pL was discharged from a nozzle. The solution constituting the droplet is a solution containing a conductive material, and specifically, a silver nanometal ink having a solid content concentration of 20 wt%.

  The droplets of the silver nanometal ink were dropped while the droplet discharge head moved once in the scanning direction. The resolution in the scanning direction of the droplet discharge head is 4800 dpi (pitch 5.3 μm), and droplets are dropped on the high surface energy region where the source droplet supply region 163 is provided. The solution spreads wet throughout. Thereafter, the solvent of the solution containing the conductive material is volatilized, whereby the drain electrode 150, the source electrode 160, and the source signal line 161 are formed by scanning the droplet discharge head once in the scanning direction.

  Next, a solution in which the polymer 1 which is an organic semiconductor synthesized according to the chemical formula of Chemical Formula 10 is dissolved in toluene is applied in contact with both the drain electrode 150 and the source electrode 160 by an inkjet method, and the solvent is volatilized. A semiconductor layer 190 was formed by drying. After that, when the gate signal line 131 is connected to a scanning signal driver IC (not shown) and the source signal line 161 is connected to a data signal driver IC (not shown) and driven, according to the data signal and the scanning signal. Each transistor could be driven.

  In this embodiment, the formation time of the gate electrode 130, the gate signal line 131, the source electrode 160, and the source signal line 161 can be shortened, and the active matrix substrate can be finally manufactured in a short time.

（実施例５）
実施例５は、第２の実施の形態における画像表示装置に関するものである。実施例４において作製したアクティブマトリックス基板に、図１９に示す表示素子として電気泳動素子を貼り合わせ画像表示装置を作製した。この電気泳動素子は、酸化チタン粒子とオイルブルーで着色したアイソパーを内包するマイクロカプセルをＰＶＡ水溶液に混合して、ＩＴＯからなる上部電極２１０が形成されているポリカーボネートからなる上部基板２２０上に塗布することにより、マイクロカプセルとＰＶＡバインダーからなる層を形成した。

(Example 5)
Example 5 relates to the image display apparatus according to the second embodiment. An electrophoretic element was bonded to the active matrix substrate produced in Example 4 as the display element shown in FIG. 19 to produce an image display device. In this electrophoretic element, microcapsules containing titanium oxide particles and isopar colored with oil blue are mixed in a PVA aqueous solution and applied to an upper substrate 220 made of polycarbonate on which an upper electrode 210 made of ITO is formed. Thus, a layer composed of microcapsules and a PVA binder was formed.

  This was laminated on the active matrix substrate in Example 4 to produce an image display device. When this lamination is performed, the interlayer insulating film 180 and the lower electrode 190 are formed on the active matrix substrate of Example 4, and then the upper electrode 210 is formed on the upper substrate 220 described above. A laminate of layers 190 serving as display elements was laminated.

  When the image display device thus manufactured was driven, an image display could be performed.

  As mentioned above, although the form which concerns on implementation of this invention was demonstrated, the said content does not limit the content of invention.

Cross-sectional schematic diagram of the laminated structure according to the first embodiment Cross-sectional schematic diagram showing an example of the structure of the wettability changing layer (1) Cross-sectional schematic diagram showing a configuration example of the wettability changing layer (2) Cross-sectional schematic diagram showing a configuration example of the wettability changing layer (3) Plane schematic diagram showing an example of the structure of the surface of the wettability changing layer (1) Plane schematic diagram showing a configuration example of the surface of the wettability changing layer (2) Plane schematic diagram showing an example of the structure of the surface of the wettability changing layer (3) Conceptual diagram showing an example of a polymer material having a hydrophobic group in the side chain Perspective view of inkjet device Schematic diagram of high surface energy region in the first embodiment Explanatory drawing of the formation method of the conductive layer in 1st Embodiment Explanatory drawing of the formation process of the conductive layer in 1st Embodiment Partial enlarged view of FIG. Schematic diagram of another high surface energy region in the first embodiment Configuration diagram of another nozzle arrangement of the droplet discharge head in the first embodiment Configuration diagram of another arrangement of droplet discharge heads in the first embodiment Configuration diagram of another nozzle arrangement of the droplet discharge head in the first embodiment Wiring configuration diagram of active matrix substrate in second embodiment Cross-sectional schematic diagram of the image display device in the first embodiment Correlation diagram between UV irradiation dose and water contact angle Correlation diagram between surface tension and contact angle of liquid

Explanation of symbols

3 Droplet Discharge Head 30 Wetting Change Layer 33 Nozzle 34 Droplet 40 High Surface Energy Area 41 Wiring Area 42 Droplet Supply Area 50 Low Surface Energy Area

Claims (10)

A substrate,
On the substrate, a wettability changing layer in which a high surface energy region and a low surface energy region are formed,
A conductive layer formed of a conductive material on a high surface energy region of the wettability changing layer,
The conductive layer is formed by discharging a liquid containing a conductive material while scanning an inkjet head in the main scanning direction ,
The high surface energy region, which is a conductive layer having a pattern extending in the sub-scanning direction perpendicular to the main scanning direction of the ink jet head, has droplets in the high surface energy region extending in the main scanning direction of the ink jet head. A laminated structure in which a supply region is formed. The wettability changing layer includes a material whose critical surface tension changes by applying energy, and changes from a low surface energy state to a high surface energy state,
2. The laminated structure according to claim 1, wherein a high surface energy region and a low surface energy region are formed by applying the energy.   The conductive layer having a pattern extending in the sub-scanning direction of the ink jet head causes the liquid containing the conductive material to drop from the ink jet head to the droplet supply region, and the liquid flows on the high surface energy region. The laminated structure according to claim 1, wherein the laminated structure is formed.   4. The stacked structure according to claim 1, wherein the conductive layer having a pattern extending in the sub-scanning direction includes both a component in the sub-scanning direction and a component in the main scanning direction. . The laminated structure according to any one of claims 1 to 4,
An interlayer insulating film for multilayering the conductive layer formed in the laminated structure;
A multilayer wiring board comprising: A transistor having a gate electrode, a gate insulating layer, a source electrode, a drain electrode, and a semiconductor layer;
A gate signal line connected to the gate electrode;
A source signal line formed substantially perpendicular to the gate signal line and connected to the source electrode;
In an active matrix substrate having
It has the laminated structure as described in any one of Claim 1 to 4,
An active matrix substrate, wherein at least one of the gate electrode, the source electrode, the drain electrode, the gate signal line, and the source signal line is formed of a conductive layer in the stacked structure. .   The active matrix substrate according to claim 6, wherein the semiconductor layer is made of an organic semiconductor material. An image display element;
An active matrix substrate according to claim 6 or 7,
An image display device comprising: Forming a wettability changing layer including a wettability changing material whose surface energy is changed by applying energy on the substrate;
Forming a high surface energy region by applying the energy to the wettability changing layer;
A step of dropping a solution containing a conductive material on a high surface energy region while scanning the inkjet head in the main scanning direction, and flowing the solution containing the conductive material over the entire region to be a conductive layer;
Forming the conductive layer by drying a solution containing the conductive material on the high surface energy region; and
In a method for forming a laminated structure having
The high surface energy region includes a region to be the conductive layer and a droplet supply region.
The droplet supply region extends in the main scanning direction of the ink jet head in the pattern of the conductive layer extending in the sub scanning direction perpendicular to the main scanning direction of the ink jet head. The manufacturing method of the laminated structure characterized by these. When the pitch in the sub-scanning direction of the inkjet head is P, at least a part of the pitch in the sub-scanning direction of the inkjet head in the droplet supply region is P / N (N is an integer). A method for producing a laminated structure according to claim 9.

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