JP2010161371A - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP2010161371A JP2010161371A JP2010002841A JP2010002841A JP2010161371A JP 2010161371 A JP2010161371 A JP 2010161371A JP 2010002841 A JP2010002841 A JP 2010002841A JP 2010002841 A JP2010002841 A JP 2010002841A JP 2010161371 A JP2010161371 A JP 2010161371A
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- layer
- quantum barrier
- emitting device
- type nitride
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims abstract description 43
- 230000003287 optical effect Effects 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
【解決手段】本発明による窒化物半導体発光素子は、n型窒化物層とp型窒化物層との間に形成される活性層を含む窒化物半導体発光素子であって、活性層は交互に形成される複数の量子井戸層及び量子障壁層を含み、複数の量子障壁層のうち、p型窒化物層に隣接して形成される量子障壁層は残りの量子障壁層より薄いことを特徴とする。
【選択図】図2
Description
20 バッファ層
30 n型窒化物層
35 n型電極
40 活性層
41,41’ 量子障壁層
43 量子井戸層
50 p型窒化物層
52 透明電極
55 p型電極
Claims (4)
- n型窒化物層とp型窒化物層との間に形成される活性層を含む窒化物半導体発光素子であって、
前記活性層は、交互に形成される二つ以上の量子井戸層及び量子障壁層を含み、
前記二つ以上の量子障壁層のうち、前記p型窒化物層に隣接して形成される量子障壁層は、残りの量子障壁層より薄いことを特徴とする窒化物半導体発光素子。 - 前記活性層は緑色波長光を放出することを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記p型窒化物層に隣接して形成される量子障壁層の厚さは10nm未満であり、
前記残りの量子障壁層の厚さは10nm以上30nm以下であることを特徴とする請求項1または2に記載の窒化物半導体発光素子。 - 前記二つ以上の量子井戸層の厚さは均一であることを特徴とする請求項1から3の何れかに記載の窒化物半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0001806 | 2009-01-09 | ||
KR1020090001806A KR101549811B1 (ko) | 2009-01-09 | 2009-01-09 | 질화물 반도체 발광소자 |
Publications (2)
Publication Number | Publication Date |
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JP2010161371A true JP2010161371A (ja) | 2010-07-22 |
JP5165702B2 JP5165702B2 (ja) | 2013-03-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010002841A Active JP5165702B2 (ja) | 2009-01-09 | 2010-01-08 | 窒化物半導体発光素子 |
Country Status (3)
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---|---|
US (1) | US8124960B2 (ja) |
JP (1) | JP5165702B2 (ja) |
KR (1) | KR101549811B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013138126A (ja) * | 2011-12-28 | 2013-07-11 | Toyoda Gosei Co Ltd | 半導体発光素子、発光装置 |
KR101544164B1 (ko) * | 2013-06-21 | 2015-08-12 | 일진엘이디(주) | 발광 소자 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013014703A1 (ja) | 2011-07-25 | 2013-01-31 | パナソニック株式会社 | 表示装置及び表示装置の駆動方法 |
KR101836122B1 (ko) * | 2011-08-24 | 2018-04-19 | 엘지이노텍 주식회사 | 발광소자 |
KR101747349B1 (ko) | 2011-12-07 | 2017-06-28 | 삼성전자주식회사 | 반도체 발광소자 |
TWI502767B (zh) * | 2012-06-13 | 2015-10-01 | Lextar Electronics Corp | 半導體發光結構 |
US9099593B2 (en) * | 2012-09-14 | 2015-08-04 | Tsmc Solid State Lighting Ltd. | III-V group compound devices with improved efficiency and droop rate |
KR101934000B1 (ko) * | 2013-01-10 | 2019-04-05 | 엘지이노텍 주식회사 | 발광 소자 |
US10693038B2 (en) * | 2017-11-22 | 2020-06-23 | Epistar Corporation | Semiconductor device |
CN110600591B (zh) * | 2019-08-21 | 2021-11-26 | 苏州紫灿科技有限公司 | 具有啁啾超晶格最终势垒结构的深紫外led及制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349337A (ja) * | 1999-06-07 | 2000-12-15 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2006108585A (ja) * | 2004-10-08 | 2006-04-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2006310864A (ja) * | 2005-04-28 | 2006-11-09 | Sharp Corp | 半導体発光デバイスおよび半導体デバイスの製造方法 |
JP2007110090A (ja) * | 2005-09-13 | 2007-04-26 | Sony Corp | GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 |
WO2007138657A1 (ja) * | 2006-05-26 | 2007-12-06 | Rohm Co., Ltd. | 窒化物半導体発光素子 |
JP2009088562A (ja) * | 2008-12-26 | 2009-04-23 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4116260B2 (ja) * | 2001-02-23 | 2008-07-09 | 株式会社東芝 | 半導体発光装置 |
WO2005086243A1 (en) * | 2004-03-08 | 2005-09-15 | Showa Denko K.K. | Pn junction type croup iii nitride semiconductor light-emitting device |
JP2009099893A (ja) * | 2007-10-19 | 2009-05-07 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
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2009
- 2009-01-09 KR KR1020090001806A patent/KR101549811B1/ko active IP Right Grant
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2010
- 2010-01-08 JP JP2010002841A patent/JP5165702B2/ja active Active
- 2010-01-11 US US12/685,361 patent/US8124960B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000349337A (ja) * | 1999-06-07 | 2000-12-15 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2006108585A (ja) * | 2004-10-08 | 2006-04-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
JP2006310864A (ja) * | 2005-04-28 | 2006-11-09 | Sharp Corp | 半導体発光デバイスおよび半導体デバイスの製造方法 |
JP2007110090A (ja) * | 2005-09-13 | 2007-04-26 | Sony Corp | GaN系半導体発光素子、発光装置、画像表示装置、面状光源装置、及び、液晶表示装置組立体 |
WO2007138657A1 (ja) * | 2006-05-26 | 2007-12-06 | Rohm Co., Ltd. | 窒化物半導体発光素子 |
JP2009088562A (ja) * | 2008-12-26 | 2009-04-23 | Showa Denko Kk | Iii族窒化物半導体発光素子 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013138126A (ja) * | 2011-12-28 | 2013-07-11 | Toyoda Gosei Co Ltd | 半導体発光素子、発光装置 |
KR101544164B1 (ko) * | 2013-06-21 | 2015-08-12 | 일진엘이디(주) | 발광 소자 |
Also Published As
Publication number | Publication date |
---|---|
US8124960B2 (en) | 2012-02-28 |
KR20100082479A (ko) | 2010-07-19 |
KR101549811B1 (ko) | 2015-09-04 |
JP5165702B2 (ja) | 2013-03-21 |
US20100176372A1 (en) | 2010-07-15 |
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