JP2010153792A5 - - Google Patents
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- JP2010153792A5 JP2010153792A5 JP2009239186A JP2009239186A JP2010153792A5 JP 2010153792 A5 JP2010153792 A5 JP 2010153792A5 JP 2009239186 A JP2009239186 A JP 2009239186A JP 2009239186 A JP2009239186 A JP 2009239186A JP 2010153792 A5 JP2010153792 A5 JP 2010153792A5
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- silicon oxide
- reflective electrode
- electrode layer
- current diffusion
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次に、図３を参照すると、Ga1-xInxP電流拡散層１４上にプラズマCVD法、熱CVD法あるいはスパッタリング法で成膜してフォトリソグラフィ／バッファード弗酸（BHF）エッチング法あるいはドライエッチング法により厚さ90nmの酸化シリコン（SiO2）層１５を形成する。さらに、Ga1-xInxP電流拡散層１４及び酸化シリコン層１５上に抵抗加熱蒸着法、電子ビーム（EB）蒸着法あるいはスパッタリング法により厚さ300nmのAuZnよりなる反射電極層１６を形成する。この場合、酸化シリコン層１５がパターン化されるのはGa1-xInxP電流拡散層１４とAuZn反射電極層１６とのオーミック接合をとるためである。酸化シリコン層１５及び反射電極層１６が一体となって反射層として機能する。尚、酸化シリコン層１５は他の透明な誘電体材料層たとえばAl2O3、SiNx、TaOx、TiOx、ITO、ZnOの層でもよく、また、反射電極層１６は他の高反射性金属で形成してもよい。
Next, referring to FIG. 3, a film is formed on the Ga 1-x In x P current diffusion layer 14 by a plasma CVD method, a thermal CVD method or a sputtering method, and a photolithography / buffered hydrofluoric acid (BHF) etching method or A silicon oxide (SiO 2 ) layer 15 having a thickness of 90 nm is formed by dry etching. Further, a reflective electrode layer 16 made of AuZn having a thickness of 300 nm is formed on the Ga 1-x In x P current diffusion layer 14 and the silicon oxide layer 15 by resistance heating vapor deposition, electron beam (EB) vapor deposition, or sputtering. . In this case, the silicon oxide layer 15 is patterned in order to form an ohmic junction between the Ga 1-x In x P current diffusion layer 14 and the AuZn reflective electrode layer 16. The silicon oxide layer 15 and the reflective electrode layer 16 are integrated to function as a reflective layer. The silicon oxide layer 15 may be another transparent dielectric material layer such as Al 2 O 3 , SiNx, TaOx, TiOx, ITO, ZnO, and the reflective electrode layer 16 is formed of another highly reflective metal. May be.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009239186A JP5297329B2 (en) | 2008-11-20 | 2009-10-16 | Manufacturing method of optical semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008296495 | 2008-11-20 | ||
| JP2008296495 | 2008-11-20 | ||
| JP2009239186A JP5297329B2 (en) | 2008-11-20 | 2009-10-16 | Manufacturing method of optical semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010153792A JP2010153792A (en) | 2010-07-08 |
| JP2010153792A5 true JP2010153792A5 (en) | 2012-01-19 |
| JP5297329B2 JP5297329B2 (en) | 2013-09-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009239186A Expired - Fee Related JP5297329B2 (en) | 2008-11-20 | 2009-10-16 | Manufacturing method of optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5297329B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101125025B1 (en) * | 2010-07-23 | 2012-03-27 | 엘지이노텍 주식회사 | Light emitting device and method for manufacturing the same |
| KR101871503B1 (en) * | 2011-09-06 | 2018-06-27 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| EP2600389B1 (en) * | 2011-11-29 | 2020-01-15 | IMEC vzw | Method for bonding semiconductor substrates |
| JP2016092235A (en) * | 2014-11-05 | 2016-05-23 | ウシオ電機株式会社 | Semiconductor light emitting element |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2883918B2 (en) * | 1989-06-27 | 1999-04-19 | 光技術研究開発株式会社 | Compound semiconductor pattern formation method |
| JPH06104218A (en) * | 1991-01-08 | 1994-04-15 | Nec Corp | Dry etching method |
| JP2006135266A (en) * | 2004-11-09 | 2006-05-25 | Sharp Corp | Method for manufacturing semiconductor laser element, and semiconductor laser element manufactured thereby |
| JP5089215B2 (en) * | 2007-03-28 | 2012-12-05 | 古河電気工業株式会社 | Nitride compound semiconductor layer etching method and semiconductor device manufactured using the method |
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2009
- 2009-10-16 JP JP2009239186A patent/JP5297329B2/en not_active Expired - Fee Related
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