JP2010152031A - Photomask pattern position correcting method, and position corrected photomask - Google Patents

Photomask pattern position correcting method, and position corrected photomask Download PDF

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JP2010152031A
JP2010152031A JP2008329114A JP2008329114A JP2010152031A JP 2010152031 A JP2010152031 A JP 2010152031A JP 2008329114 A JP2008329114 A JP 2008329114A JP 2008329114 A JP2008329114 A JP 2008329114A JP 2010152031 A JP2010152031 A JP 2010152031A
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photomask
pattern
pattern position
position correction
transparent substrate
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JP5353230B2 (en
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Nobuto Toyama
登山　　伸人
Yasutaka Morikawa
泰考 森川
Naoya Hayashi
直也 林
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a photomask pattern position correcting method which corrects an error of a position of a random mask pattern of a photomask which cannot be corrected conventionally, using a simple and effective method, and to provide a pattern position corrected photomask. <P>SOLUTION: The pattern position correcting method for a photomask where a pattern is formed on a principal surface of a transparent substrate, measures a pattern position of the photomask to calculate an amount of displacement from a pattern design position, uses a pattern position in which the amount of displacement exceeds a predetermined allowable value as a target of position correction to radiate femtosecond laser in the vicinity of the pattern position of the correction target and form a cavity inside the transparent substrate, and corrects the amount of displacement using stress caused by the cavity forming. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、透明基板上にパタンを形成したフォトマスクのパタン位置の補正方法およびその方法でパタン位置が補正されたフォトマスクに関する。   The present invention relates to a method for correcting a pattern position of a photomask having a pattern formed on a transparent substrate, and a photomask whose pattern position is corrected by the method.

半導体製造における露光工程では、一般に、縮小投影露光装置を用いてフォトマスク（単にマスクあるいはレチクルとも呼ばれる）に露光光を照射し、光学レンズで縮小してウェハ上に結像してパタンを転写している。フォトマスクは、通常、合成石英基板などの光学研磨された透明基板の一主面上にクロムなどの遮光膜により半導体集積回路パタンが形成されている。フォトマスクのパタンが半導体集積回路の原版となるため、半導体集積回路の微細化、高集積化に伴い、フォトマスクパタンの位置精度や寸法精度はますます厳しくなっている。   In the exposure process in semiconductor manufacturing, exposure light is generally irradiated onto a photomask (also referred to simply as a mask or reticle) using a reduction projection exposure apparatus, reduced by an optical lens, imaged on a wafer, and the pattern transferred. ing. In a photomask, a semiconductor integrated circuit pattern is usually formed on one main surface of an optically polished transparent substrate such as a synthetic quartz substrate by a light shielding film such as chromium. Since the mask pattern of the photomask becomes the original edition of the semiconductor integrated circuit, the positional accuracy and dimensional accuracy of the photomask pattern are becoming increasingly severe as the semiconductor integrated circuit is miniaturized and highly integrated.

高精度の投影露光を行う場合、フォトマスクのパタン配列の位置精度を保証することは極めて難しい技術である。フォトマスクのパタン位置精度は、設計位置からの誤差で定義される。フォトマスクのパタン位置情報は、位置測定装置により測定され、図６に示すような位置座標分布図６５で示される。図６に示す例では、位置測定装置により測定したフォトマスク上の測定点（３６箇所）の各座標値を実線で結んであり、２５等分した正方形の設計パタンとの誤差を目視によっても容易に把握することができる。   When performing high-accuracy projection exposure, it is extremely difficult to guarantee the positional accuracy of the photomask pattern array. The pattern position accuracy of the photomask is defined by an error from the design position. The pattern position information of the photomask is measured by a position measuring device and is shown in a position coordinate distribution diagram 65 as shown in FIG. In the example shown in FIG. 6, the coordinate values of the measurement points (36 locations) on the photomask measured by the position measuring device are connected by solid lines, and errors with a square design pattern divided into 25 parts can be easily visually observed. Can grasp.

フォトマスクのパタン位置誤差を引き起こす要因としては、クロムなどのフォトマスク材料に起因するもの、電子線描画装置などの描画装置に起因するものなど様々であるが、それらの要因の中でも、フォトマスク描画装置のパターニング精度に大きく依存している。これらの材料や装置、あるいは製造プロセスなどの誤差は個別には測定困難である場合が多い。パタン位置誤差は、クロムなどの遮光膜をエッチングした後のパタン配列位置の測定によって、すべての誤差が重畳した形で定量化される。   There are various factors that cause pattern position errors in photomasks, such as those caused by photomask materials such as chromium, and those caused by drawing devices such as electron beam drawing devices. Among these factors, photomask drawing This greatly depends on the patterning accuracy of the apparatus. Errors in these materials, devices, or manufacturing processes are often difficult to measure individually. The pattern position error is quantified in a form in which all errors are superimposed by measuring the pattern arrangement position after etching a light shielding film such as chrome.

フォトマスクのパタン位置を補正するには、フォトマスクを用いる側の半導体用の投影露光装置で行うこともできる。投影露光装置でパタンの位置情報を検出することにより、マスクパタンのＸ、Ｙオフセット、回転、拡大・縮小、凹凸面補正をすることが可能である（例えば、特許文献１参照）。図７は、特許文献１に記載されている投影露光装置側でパタン位置を補正する例であり、図７（ａ）は本来のチップパタンのショット領域に対して傾斜しているチップローテーション誤差、図７（ｂ）はショット領域の倍率が本来の倍率と異なっているチップスケーリング誤差、図７（ｃ）は投影パタンの所定の計測点での位置ずれ量を示すチップディストーション誤差であり、誤差の状態が糸巻き型の場合と樽型の場合を例示している。
また、２次項までのパタン位置誤差の補正は、フォトマスクの製造装置である電子線描画装置などのフォトマスク描画装置においても補正することが可能である。
ＵＳＰ６１６３３６６ The pattern position of the photomask can be corrected by a semiconductor projection exposure apparatus that uses the photomask. By detecting pattern position information with a projection exposure apparatus, mask pattern X, Y offset, rotation, enlargement / reduction, and uneven surface correction can be performed (see, for example, Patent Document 1). FIG. 7 shows an example of correcting the pattern position on the projection exposure apparatus side described in Patent Document 1, and FIG. 7A shows a chip rotation error that is inclined with respect to the shot area of the original chip pattern. FIG. 7B shows a chip scaling error in which the magnification of the shot area is different from the original magnification, and FIG. 7C shows a chip distortion error indicating a positional deviation amount at a predetermined measurement point of the projection pattern. The case where the state is a pincushion type and the case of a barrel type are illustrated.
Further, the correction of the pattern position error up to the second order can also be performed in a photomask drawing apparatus such as an electron beam drawing apparatus which is a photomask manufacturing apparatus.
USP 6163366

しかしながら、上記の投影露光装置におけるフォトマスクのパタン位置補正、あるいはフォトマスク描画装置側におけるフォトマスクのパタン位置補正において、２次項を超えるランダムなフォトマスクパターンの位置誤差については、補正する手段がないという問題があった。   However, in the photomask pattern position correction in the above-described projection exposure apparatus or the photomask pattern position correction in the photomask drawing apparatus side, there is no means for correcting a random photomask pattern position error exceeding the second order term. There was a problem.

そこで、本発明は、上記の問題点に鑑みてなされたものである。すなわち、本発明の目的は、従来不可能であったフォトマスクのランダムなフォトマスクパターンの位置誤差を、簡便かつ有効な方法で補正するフォトマスクのパタン位置の補正方法およびパタン位置が補正されたフォトマスクを提供することである。   Therefore, the present invention has been made in view of the above problems. In other words, an object of the present invention is to correct a pattern error of a photomask that corrects a random photomask pattern position error of a photomask, which has been impossible in the past, by a simple and effective method, and the pattern position is corrected. It is to provide a photomask.

上記の課題を解決するために、本発明の請求項１の発明に係るフォトマスクのパタン位置補正方法は、透明基板の主面上にパタンを形成したフォトマスクのパタン位置補正方法であって、フォトマスクのパタン位置を測定してパタン設計位置からのずれ量を求め、前記ずれ量が予め定めた許容値を超えているパタン位置を位置補正の対象とし、前記補正対象のパタン位置の近傍にフェムト秒レーザを照射して前記透明基板の内部に空孔を形成し、該空孔形成による応力で前記ずれ量を補正することを特徴とするものである。   In order to solve the above-mentioned problem, a photomask pattern position correction method according to claim 1 of the present invention is a photomask pattern position correction method in which a pattern is formed on a main surface of a transparent substrate, The pattern position of the photomask is measured to determine the amount of deviation from the pattern design position, and the pattern position where the amount of deviation exceeds a predetermined allowable value is set as a position correction target, and in the vicinity of the pattern position to be corrected. A femtosecond laser is irradiated to form holes in the transparent substrate, and the shift amount is corrected by the stress due to the hole formation.

本発明の請求項２の発明に係るフォトマスクのパタン位置補正方法は、請求項１に記載のフォトマスクのパタン位置補正方法において、前記レーザ照射が、前記フォトマスクのパタン形成した主面と反対の主面側から照射することを特徴とするものである。   According to a second aspect of the present invention, there is provided a photomask pattern position correcting method according to the first aspect of the present invention, wherein the laser irradiation is opposite to the main surface on which the pattern of the photomask is formed. It irradiates from the main surface side.

本発明の請求項３の発明に係るフォトマスクのパタン位置補正方法は、請求項１または請求項２に記載のフォトマスクのパタン位置補正方法において、前記レーザを照射する領域が、前記フォトマスクの回路パタン部よりも外側であり、前記透明基板の端面よりも１０ｍｍ以上内側であることを特徴とするものである。   According to a third aspect of the present invention, there is provided a photomask pattern position correction method according to the first or second aspect, wherein the region to be irradiated with the laser is a region of the photomask. It is outside the circuit pattern part and is 10 mm or more inside from the end face of the transparent substrate.

本発明の請求項４の発明に係るフォトマスクのパタン位置補正方法は、請求項１から請求項３までのいずれか１項に記載のフォトマスクのパタン位置補正方法において、前記空孔が、前記透明基板の表裏の両主面上から５００μｍ以上内側に形成することを特徴とするものである。   The pattern position correction method for a photomask according to a fourth aspect of the present invention is the photomask pattern position correction method according to any one of the first to third aspects, wherein the holes are the It is characterized in that it is formed at least 500 μm inside from both main surfaces on the front and back sides of the transparent substrate.

本発明の請求項５の発明に係るフォトマスクのパタン位置補正方法は、請求項１から請求項４までのいずれか１項に記載のフォトマスクのパタン位置補正方法において、前記空孔が、直径２μｍ〜５μｍの範囲の大きさであることを特徴とするものである。   The pattern position correction method for a photomask according to a fifth aspect of the present invention is the pattern position correction method for a photomask according to any one of the first to fourth aspects, wherein the hole has a diameter. The size is in the range of 2 μm to 5 μm.

本発明の請求項６の発明に係るフォトマスクは、請求項１から請求項５までのいずれか１項に記載のフォトマスクのパタン位置補正方法によりパタン位置補正がされたことを特徴とするものである。   A photomask according to a sixth aspect of the present invention is characterized in that the pattern position is corrected by the pattern position correcting method for a photomask according to any one of the first to fifth aspects. It is.

本発明のフォトマスクのパタン位置補正方法によれば、従来、半導体用投影露光装置やフォトマスク描画装置などによる位置補正ができなかったフォトマスク上のランダム成分の位置分布が、本発明のフォトマスクのパタン位置補正方法によりフェムト秒レーザでフォトマスクの透明基板の内部に空孔を形成することによりパタン位置を補正することが可能となる。本発明のフォトマスクのパタン位置補正方法によれば、フェムト秒レーザの照射エネルギーを変化させることにより空孔径を変化させ、照射密度を変えることにより位置補正量を制御することが可能である。   According to the pattern position correction method of the photomask of the present invention, the position distribution of random components on the photomask that could not be corrected by a semiconductor projection exposure apparatus, a photomask drawing apparatus, or the like has been conventionally obtained. With this pattern position correction method, it is possible to correct the pattern position by forming holes in the transparent substrate of the photomask with a femtosecond laser. According to the pattern position correcting method of the photomask of the present invention, it is possible to change the hole diameter by changing the irradiation energy of the femtosecond laser and to control the position correction amount by changing the irradiation density.

本発明のフォトマスクのパタン位置補正方法を用いたフォトマスクによれば、従来、パタン位置精度不良として廃棄されていたフォトマスクをフェムト秒レーザでフォトマスクの透明基板の内部に空孔を形成することによりパタン位置を補正して良品とし、フォトマスクコスト低減、納期短縮、資源の有効活用に貢献することができる。   According to the photomask using the pattern position correction method of the photomask of the present invention, holes are formed in the transparent substrate of the photomask with a femtosecond laser in the photomask that has been discarded as a pattern position accuracy defect conventionally. As a result, the position of the pattern is corrected to be a non-defective product, which can contribute to reducing the photomask cost, shortening the delivery time, and effectively using resources.

以下、図面に基づいて、本発明のフォトマスクのパタン位置補正方法の最良の実施形態について詳細に説明する。   DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a photomask pattern position correction method according to the present invention will be described below in detail with reference to the drawings.

本発明のフォトマスクのパタン位置補正方法では、先ず透明基板の主面上にパタンを形成したフォトマスクのパタン位置を測定してパタン設計位置からのずれ量を求める。測定するパタン位置は予め定められており、測定した測定点のパタンの設計位置からのずれ量が予め定めた許容値を超えていたときには、その測定点のパタンを補正の対象とする。フォトマスクのパタン位置は、フォトマスク専用の位置測定装置あるいはフォトマスク用電子線描画装置により測定することができ、図６に例示したように、パタン設計位置からのずれ量が位置座標の分布図として示される。測定点は、通常、透明基板の一主面が正方形のマスク表面を回路パタンに従って複数の小さな正方形に分割し、各々の正方形の交点の座標を求め、設計パタンとの誤差を示すものである。   In the photomask pattern position correction method of the present invention, first, the pattern position of a photomask having a pattern formed on the main surface of the transparent substrate is measured to determine the amount of deviation from the pattern design position. The pattern position to be measured is determined in advance. If the amount of deviation of the measured measurement point from the design position of the pattern exceeds a predetermined allowable value, the pattern of the measurement point is subject to correction. The pattern position of the photomask can be measured by a position measuring device dedicated to the photomask or an electron beam drawing apparatus for the photomask. As illustrated in FIG. 6, the deviation from the pattern design position is a distribution diagram of the position coordinates. As shown. The measurement points are usually obtained by dividing the mask surface having one square principal surface of the transparent substrate into a plurality of small squares according to a circuit pattern, obtaining coordinates of intersections of the squares, and showing an error from the design pattern.

図１は、本発明のフォトマスクのパタン位置補正方法の一例を説明する斜視模式図である。図１に示すように、パタン形成されたフォトマスク１０の一方の主面側からフェムト秒レーザ光１１を対物レンズ１２を介して照射し（図１（ａ））、フェムト秒レーザパルスによるレーザ干渉により、フォトマスク１０の透明基板の内部に空孔（ボイド）１３を形成する（図１（ｂ））。この空孔１３を形成するときに生じる応力でパタン位置を補正するものである。   FIG. 1 is a schematic perspective view illustrating an example of a photomask pattern position correction method according to the present invention. As shown in FIG. 1, femtosecond laser light 11 is irradiated from one main surface side of a patterned photomask 10 through an objective lens 12 (FIG. 1 (a)), and laser interference due to femtosecond laser pulses. Thus, voids 13 are formed inside the transparent substrate of the photomask 10 (FIG. 1B). The pattern position is corrected by the stress generated when the holes 13 are formed.

本発明において用いるフェムト秒レーザは中心波長８００ｎｍで、発信周波数は数ｋＨｚのパルスである。フォトマスク基材である合成石英基板に空孔を形成するためには、通常、１パルスあたり数〜数十μＪのレーザエネルギーが必要である。   The femtosecond laser used in the present invention is a pulse having a center wavelength of 800 nm and a transmission frequency of several kHz. In order to form holes in a synthetic quartz substrate that is a photomask base material, a laser energy of several to several tens μJ per pulse is usually required.

図２は、本発明のフォトマスクのパタン位置補正方法を適用する領域を示すフォトマスク２０の上面模式図である。パタン位置補正方法を適用する領域はフェムト秒レーザを照射する領域であり、マスクパタンに損傷を与えないために、フォトマスク２０の回路パタン部２１よりも外側である必要がある。例えば、６インチ角のフォトマスクであれば、通常、マスク中央部の１１０×１１０ｍｍ程度よりも外側が照射可能領域となる。一方、フォトマスクの端面の近傍はレーザによる熱歪によりガラス欠けなどを生じ易く、また、回路パタンから離れているので回路パタンの補正効果も低下してしまう。したがって、端面を含むフォトマスク外縁部２３よりも内側で、透明基板の端面よりも１０ｍｍ以上内側が好ましい。   FIG. 2 is a schematic top view of the photomask 20 showing a region to which the photomask pattern position correction method of the present invention is applied. The area to which the pattern position correction method is applied is an area where the femtosecond laser is irradiated, and needs to be outside the circuit pattern portion 21 of the photomask 20 so as not to damage the mask pattern. For example, in the case of a 6-inch square photomask, the outside of the mask central portion is usually about 110 × 110 mm, which is an irradiable region. On the other hand, near the end face of the photomask, glass chipping or the like is likely to occur due to thermal distortion caused by the laser, and the effect of correcting the circuit pattern is also reduced because it is away from the circuit pattern. Accordingly, it is preferable that the inner side of the photomask outer edge portion 23 including the end face is 10 mm or more inside the end face of the transparent substrate.

さらに、フォトマスクを用いた露光時の空孔による露光への影響のおそれを避ける上からも、パタン位置補正方法を適用する領域は回路パタン部とは少し離した方が良く、図２に示す回路パタン部２１の周囲の外接部２２（回路パタン部に接した数ｍｍ程度の領域）は照射領域から除いた方がより好ましい。図２に好ましいレーザ照射領域２４を示す。   Furthermore, from the viewpoint of avoiding the possibility of an influence on exposure due to holes at the time of exposure using a photomask, the region to which the pattern position correction method is applied should be slightly separated from the circuit pattern portion, as shown in FIG. It is more preferable that the circumscribed portion 22 (region of about several mm in contact with the circuit pattern portion) around the circuit pattern portion 21 is excluded from the irradiation region. A preferred laser irradiation region 24 is shown in FIG.

図３は、本発明のフォトマスクのパタン位置補正方法を適用する領域３３を示すフォトマスクの透明基板３０の側面模式図である。フォトマスク内での空孔は、レーザ照射によって石英基板などの透明基板による粉塵の発生を回避するために基板表面に露出してはならず、透明基板の表裏の両主面上から少なくとも５００μｍ以上内側に形成させる必要がある（図３で、ｄ＝５００μｍ）。空孔を形成する深さ方向の位置は、対物レンズを上下することにより透明基板３０の任意の深さを設定することができる。また、形成される空孔は直径２μｍ〜５μｍの範囲の大きさが好ましい。２μｍ未満の小さい空孔はレーザ光による解像力の面から形成が困難であり、一方、５μｍを超える大きな空孔であると透明基板に亀裂を生じる恐れを生じるからである。   FIG. 3 is a schematic side view of the transparent substrate 30 of the photomask showing the region 33 to which the pattern position correcting method of the photomask of the present invention is applied. The holes in the photomask must not be exposed on the substrate surface in order to avoid the generation of dust by a transparent substrate such as a quartz substrate by laser irradiation, and at least 500 μm or more from both main surfaces on the front and back of the transparent substrate It must be formed inside (d = 500 μm in FIG. 3). The position in the depth direction where the holes are formed can be set to an arbitrary depth of the transparent substrate 30 by moving the objective lens up and down. Further, the pores to be formed preferably have a diameter in the range of 2 μm to 5 μm. This is because small holes of less than 2 μm are difficult to form in terms of resolving power by laser light, while large holes of more than 5 μm may cause cracks in the transparent substrate.

本発明のパタン位置補正されたフォトマスクは、図３に示すように、レーザ照射の跡が微細な空孔３３となってフォトマスクの透明基板３０の内部に存在するために、パタン位置補正されたフォトマスクであることが認識できるが、空孔３３はパタン転写に影響を与えない回路パタンの外側に形成されているので、フォトマスクとしての機能には何の支障も生じない。   As shown in FIG. 3, the pattern position corrected photomask of the present invention has a pattern position correction because the trace of laser irradiation becomes a fine hole 33 and exists inside the transparent substrate 30 of the photomask. However, since the holes 33 are formed outside the circuit pattern that does not affect pattern transfer, there is no problem with the function as a photomask.

本発明のフォトマスクのパタン位置補正方法において、フォトマスクへのレーザ照射は、フォトマスクパタンを形成した主面側から、あるいはパタン形成した主面と反対の主面側からの両面から可能である。しかし、一般に、パタン形成した主面側は、アライメントマーク、各種のテストパタン、計測パタン、製品番号など回路パタン以外のパタンが回路パタン周辺に形成されていることが多く、その場合にはレーザ照射の障害となることもあるので、レーザ照射は、前記フォトマスクのパタン形成した主面と反対の主面側から照射するのがより好ましい。   In the photomask pattern position correction method of the present invention, laser irradiation to the photomask can be performed from the main surface side on which the photomask pattern is formed or from both sides from the main surface side opposite to the main surface on which the pattern is formed. . However, in general, patterns other than circuit patterns such as alignment marks, various test patterns, measurement patterns, and product numbers are often formed around the circuit pattern on the main surface side where the pattern is formed. Therefore, it is more preferable that the laser irradiation is performed from the main surface side opposite to the main surface on which the pattern of the photomask is formed.

また、上記の透明基板の両面からレーザ照射できるという特性により、本発明のフォトマスクのパタン位置補正方法は、両面フォトマスクと呼ばれる透明基板の両主面上にパタンを有するフォトマスクの各々のパタンの位置補正を行うことが可能である。   Further, due to the characteristic that laser irradiation can be performed from both sides of the transparent substrate, the pattern position correcting method of the photomask of the present invention is a pattern of each photomask having patterns on both main surfaces of the transparent substrate called a double-sided photomask. It is possible to perform position correction.

上記の本発明のフォトマスクのパタン位置補正方法において、透明基板として合成石英基板、遮光膜としてクロム膜を用いた半導体用バイナリマスクを例に説明したが、もとより本発明はハーフトーン型位相シフトマスク、レベンソン型位相シフトマスクなどの位相シフトマスクにも適用できるものである。また、半導体用フォトマスクに限らず、液晶ディスプレイ用大型フォトマスク、あるいはＣＧＨパタンを有する光学素子用フォトマスクなどのフォトマスクにおいても、パタン位置補正方法として用いられるものである
以下、実施例により、本発明を詳細に説明する。 In the photomask pattern position correction method of the present invention described above, a semiconductor binary mask using a synthetic quartz substrate as a transparent substrate and a chromium film as a light-shielding film has been described as an example. However, the present invention is originally a halftone phase shift mask. The present invention can also be applied to a phase shift mask such as a Levenson type phase shift mask. Further, not only for semiconductor photomasks but also for photomasks such as liquid crystal display large photomasks or optical element photomasks having CGH patterns, which are used as pattern position correction methods. The present invention will be described in detail.

光学研磨した６インチ角、０．２５インチ厚の透明な合成石英基板を洗浄し、その一方の主面（表面）上に遮光膜としてクロムを、スパッタリング法で厚さ６０ｎｍに成膜してクロムブランクスを形成した。   The optically polished 6 inch square, 0.25 inch thick transparent synthetic quartz substrate was washed, and chromium was formed on one main surface (surface) as a light-shielding film by a sputtering method to a thickness of 60 nm. Blanks were formed.

次に、上記のクロムブランクスのクロム遮光膜上に電子線レジストを厚さ３００ｎｍに塗布し、次いで、プリベーク後、電子線描画装置にてパターン露光し、現像し、レジストパターンを形成した。   Next, an electron beam resist was applied to a thickness of 300 nm on the chromium light-shielding film of the above-mentioned chromium blanks, and after pre-baking, pattern exposure was performed with an electron beam drawing apparatus and development was performed to form a resist pattern.

次に、上記のレジストパターンをマスクとして、ドライエッチング装置によりエッチングガスとして塩素と酸素の混合ガスを用い、レジストパターンから露出しているクロム遮光膜をドライエッチングしてパターニングし、次に、上記のレジストパターンを酸素プラズマで剥離し、設計パタンに基づく所定の回路パタンを有するフォトマスクを作製した。   Next, using the resist pattern as a mask, a dry etching apparatus using a mixed gas of chlorine and oxygen as an etching gas, the chromium light-shielding film exposed from the resist pattern is dry-etched and patterned. The resist pattern was peeled off with oxygen plasma to produce a photomask having a predetermined circuit pattern based on the design pattern.

次に、パタンの位置測定装置として光波干渉座標測定機（（株）ニコン製）を用いて上記のフォトマスクのパタン位置を測定し、図４に示すパタン位置座標分布４５を示す分布図を得た。図４で、図２と同じ箇所を示す場合は、図２と同じ符号を用いている。図４では、位置測定装置により測定したフォトマスク上の３６箇所の測定点の各座標値を実線で結んである。図４の分布図において、紙面右上のパタンの位置ずれ量が大きいことが読み取れ、破線で囲まれた領域のずれ量が予め定めた許容値を超えており、この領域をパタン位置補正対象領域４６とした。   Next, the pattern position of the photomask is measured using a light wave interference coordinate measuring machine (manufactured by Nikon Corporation) as a pattern position measuring device, and a distribution diagram showing the pattern position coordinate distribution 45 shown in FIG. 4 is obtained. It was. In FIG. 4, when the same part as FIG. 2 is shown, the same code | symbol as FIG. 2 is used. In FIG. 4, the coordinate values of 36 measurement points on the photomask measured by the position measurement device are connected by solid lines. In the distribution diagram of FIG. 4, it can be seen that the positional deviation amount of the pattern on the upper right side of the paper is large, and the deviation amount of the area surrounded by the broken line exceeds a predetermined allowable value. It was.

次に、図５に示すように、パタン位置補正対象領域４６の近傍で、回路パタン部２１および回路パタン部２１の周囲の外接部２２よりも２ｍｍ以上外側であって、透明基板の端面よりも１５ｍｍ内側のレーザ照射領域２４に、中心波長８００ｎｍのフェムト秒レーザをパタンとは反対側の石英基板側から５箇所に照射し、石英基板の内部に５箇所の空孔をピッチ５ｍｍで形成した。レーザの対物レンズ、焦点を調整し、空孔はパタン側の石英基板表面から深さ８００μｍの内側の位置に直径３μｍを目標に形成した。   Next, as shown in FIG. 5, in the vicinity of the pattern position correction target region 46, it is 2 mm or more outside the circuit pattern portion 21 and the circumscribed portion 22 around the circuit pattern portion 21, and more than the end surface of the transparent substrate. A femtosecond laser with a central wavelength of 800 nm was irradiated to the laser irradiation region 24 on the inner side of 15 mm from the quartz substrate side opposite to the pattern, and five holes were formed at a pitch of 5 mm inside the quartz substrate. The laser objective lens and focal point were adjusted, and holes were formed with a target diameter of 3 μm at an inner position of a depth of 800 μm from the quartz substrate surface on the pattern side.

次に、上記のレーザ照射したフォトマスク基板を、再度、上記と同じ位置測定装置に設置してパタン位置を測定し、パタン位置座標分布を示す分布図を得た。位置測定結果でパタン補正されたパタン補正後の位置座標４８を、図５のパタン位置補正対象領域４６に太い実線で示す。他の位置座標のずれ量は補正前と同じで予め定めた許容値内であった。   Next, the photomask substrate irradiated with the laser was again installed in the same position measuring apparatus as described above, the pattern position was measured, and a distribution chart showing the pattern position coordinate distribution was obtained. The position coordinates 48 after pattern correction, which has been pattern corrected by the position measurement result, are indicated by a thick solid line in the pattern position correction target area 46 of FIG. The amount of deviation of other position coordinates was the same as that before correction and was within a predetermined allowable value.

本実施例のパタン位置補正方法によりパタン位置補正がされたフォトマスクは、高いパタン位置精度を有し、転写露光装置を用いてウェハ上にパタン転写することにより、レーザ照射した箇所はフォトマスクパタン転写には影響を与えないことを確認した。本実施例のパタン位置補正方法を行うことにより、従来、パタン位置精度不良として廃棄されていたフォトマスクをフェムト秒レーザでフォトマスク基板の内部に空孔を形成することによりパタン位置を補正して良品とし、フォトマスクコストを低減し、納期を短縮し、資源を有効活用することができた。   The photomask that has been subjected to pattern position correction by the pattern position correction method of this embodiment has high pattern position accuracy, and the pattern irradiated onto the wafer using a transfer exposure apparatus allows the portion irradiated with the laser to be exposed to the photomask pattern. It was confirmed that there was no effect on transcription. By performing the pattern position correction method of this embodiment, the pattern position is corrected by forming a hole in the photomask substrate with a femtosecond laser in a photomask that has been discarded as a pattern position accuracy defect conventionally. It was a non-defective product, reducing photomask costs, shortening delivery times, and making effective use of resources.

本発明のフォトマスクのパタン位置補正方法の一例を説明する斜視模式図である。It is a perspective schematic diagram explaining an example of the pattern position correction method of the photomask of this invention. 本発明のフォトマスクのパタン位置補正方法を適用する領域を示すフォトマスク基板上面模式図である。It is a photomask substrate upper surface schematic diagram which shows the area | region which applies the pattern position correction method of the photomask of this invention. 本発明のフォトマスクのパタン位置補正方法を適用する領域を示すフォトマスク基板側面模式図である。It is a photomask substrate side surface schematic diagram which shows the area | region which applies the pattern position correction method of the photomask of this invention. 本発明のフォトマスクのパタン位置補正方法を適用する前のパタン位置座標分布を示すフォトマスク基板上面模式図である。It is a photomask substrate upper surface schematic diagram which shows the pattern position coordinate distribution before applying the pattern position correction method of the photomask of this invention. 本発明のフォトマスクのパタン位置補正方法を適用した後のパタン位置座標分布とレーザ照射位置を示すフォトマスク基板上面模式図である。It is a photomask substrate upper surface schematic diagram which shows the pattern position coordinate distribution and laser irradiation position after applying the pattern position correction method of the photomask of this invention. フォトマスク上のパタンの位置座標分布図である。It is a position coordinate distribution map of the pattern on the photomask. 従来の露光装置のひずみ検出機構の説明図である。It is explanatory drawing of the distortion | strain detection mechanism of the conventional exposure apparatus.

符号の説明Explanation of symbols

１０ フォトマスク
１１ フェムト秒レーザ
１２ 対物レンズ
１３ 空孔
２０ フォトマスク
２１ 回路パタン部
２２ 回路パタン部外接領域
２３ フォトマスク外縁部
２４ レーザ照射可能領域
３０ フォトマスクの透明基板
３３ 空孔形成領域
４５ パタン位置座標分布
４６ パタン位置補正対象領域
４７ レーザ照射位置
４８ パタン補正後の位置座標
６５ パタン位置座標分布 DESCRIPTION OF SYMBOLS 10 Photomask 11 Femtosecond laser 12 Objective lens 13 Hole 20 Photomask 21 Circuit pattern part 22 Circuit pattern part circumscribing area 23 Photomask outer edge part 24 Laser irradiation possible area 30 Photomask transparent substrate 33 Hole formation area 45 Pattern position Coordinate distribution 46 Pattern position correction target area 47 Laser irradiation position 48 Position coordinates after pattern correction 65 Pattern position coordinate distribution

Claims (6)

透明基板の主面上にパタンを形成したフォトマスクのパタン位置補正方法であって、
フォトマスクのパタン位置を測定してパタン設計位置からのずれ量を求め、前記ずれ量が予め定めた許容値を超えているパタン位置を位置補正の対象とし、前記補正対象のパタン位置の近傍にフェムト秒レーザを照射して前記透明基板の内部に空孔を形成し、該空孔形成による応力で前記ずれ量を補正することを特徴とするフォトマスクのパタン位置補正方法。 A pattern position correction method for a photomask in which a pattern is formed on a main surface of a transparent substrate,
The pattern position of the photomask is measured to determine the amount of deviation from the pattern design position, and the pattern position where the amount of deviation exceeds a predetermined allowable value is set as a position correction target, and in the vicinity of the pattern position to be corrected. A pattern position correction method for a photomask, wherein femtosecond laser irradiation is performed to form holes in the transparent substrate, and the amount of deviation is corrected by stress due to the hole formation. 前記レーザ照射が、前記フォトマスクのパタンを形成した主面と反対の主面側から照射することを特徴とする請求項１に記載のフォトマスクのパタン位置補正方法。   2. The photomask pattern position correction method according to claim 1, wherein the laser irradiation is performed from a main surface opposite to a main surface on which the pattern of the photomask is formed. 前記レーザを照射する領域が、前記フォトマスクの回路パタン部よりも外側であり、前記透明基板の端面よりも１０ｍｍ以上内側であることを特徴とする請求項１または請求項２に記載のフォトマスクのパタン位置補正方法。   3. The photomask according to claim 1, wherein a region to be irradiated with the laser is outside a circuit pattern portion of the photomask and is inside by 10 mm or more from an end face of the transparent substrate. Pattern position correction method. 前記空孔が、前記透明基板の表裏の両主面上から５００μｍ以上内側に形成することを特徴とする請求項１から請求項３までのいずれか１項に記載のフォトマスクのパタン位置補正方法。   4. The pattern position correcting method for a photomask according to claim 1, wherein the holes are formed at least 500 μm inside from both main surfaces of the front and back surfaces of the transparent substrate. 5. . 前記空孔が、直径２μｍ〜５μｍの範囲の大きさであることを特徴とする請求項１から請求項４までのいずれか１項に記載のフォトマスクのパタン位置補正方法。   5. The pattern position correction method for a photomask according to claim 1, wherein the hole has a diameter in a range of 2 μm to 5 μm. 請求項１から請求項５までのいずれか１項に記載のフォトマスクのパタン位置補正方法によりパタン位置補正がされたことを特徴とするフォトマスク。   6. A photomask that has been subjected to pattern position correction by the pattern position correction method for a photomask according to any one of claims 1 to 5.
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