JP2006030221A - Mask and method for measuring dimension of mask pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for measuring the dimension of a mask pattern with high accuracy. <P>SOLUTION: An auxiliary pattern 12 for dimension measurement is formed near the top end of an objective pattern 11 for measurement. The position of the pattern edge of the objective pattern 11 is measured by using the auxiliary pattern 12 as a reference and variation from a designed value is measured to obtain the dimension of the objective pattern 11. The auxiliary pattern 12 is formed into a shape and dimension in such a manner that when the objective pattern 11 is transferred onto a wafer to form a circuit pattern, the circuit pattern can keep its essential functions, as well as the pattern 12 is formed in a position to allow the circuit pattern to keep its essential functions. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a mask and a mask pattern dimension measuring method, and more particularly to a mask used for forming a circuit pattern of a semiconductor device and a mask pattern dimension measuring method formed on the mask.

  With the recent miniaturization and higher integration of semiconductor devices, stricter quality than ever is required for the dimensional accuracy of a mask pattern of a photomask (referred to as “mask”) used in the manufacture thereof.

  General mask pattern dimension guarantee items include in-plane uniformity, linearity, density, XY difference, etc. In recent masks for advanced devices, in addition to these, the tip position of the mask pattern The amount of variation from the design value is very important. This is because in device manufacturing, the circuit pattern part formed by transferring the tip of the line pattern onto the wafer often overlaps with the hole pattern for making contact with other layers using that part as the wiring end. It is. For example, if a device is manufactured using a mask with a large amount of variation in the position of the line pattern tip, there is a problem that a sufficient contact area between the line pattern and the hole pattern cannot be secured, causing a contact failure. Can occur.

  The current advanced devices are becoming more highly integrated and multifunctional, and it is impossible to draw lines and contact holes with a sufficient margin at the time of design. Therefore, the mask pattern of the mask for forming the circuit pattern of the device needs to be formed with high accuracy. On the other hand, in the mask manufacturing, when the mask pattern is formed, the position of the pattern edge may fluctuate from the design value due to insufficient resolution of the tip. Therefore, in order to manufacture a device with high quality, it is necessary to accurately measure and guarantee the dimension of the mask pattern formed on the mask prior to manufacturing.

  Conventionally, a scanning electron microscope (Scanning Electron Microscope, SEM) has been widely used for dimension measurement of a mask pattern. When measuring the dimensions of a mask pattern using an SEM, the upper limit of the dimension that can be displayed and measured on the SEM screen is about 3 μm under the measurement magnification (for example, 50,000 times) required for normal accuracy assurance. is there.

FIG. 11 shows an example of a mask pattern.
For example, a layer having a circuit pattern having a shape as shown in FIG. 11 exists in the device, and it is necessary to guarantee a dimension (about 2.5 μm to 3.0 μm) in the longitudinal direction of the mask pattern 100 for forming the layer. Assume that there is. In such a case, the entire mask pattern 100 is displayed on the SEM screen, and the dimension L from the left end to the right end is measured. In some cases, the measurement magnification of the SEM is lowered, the entire mask pattern 100 is projected on the screen, and the dimensions are measured.

The SEM is also used for measuring the dimension of the circuit pattern after exposure, in addition to measuring the dimension of the mask pattern. For example, conventionally, large-size and small-size misregistration detection patterns are formed, large-size misregistration detection patterns using an optical measuring instrument, and fine-size misregistration detection patterns using an SEM. Thus, a method for measuring positional deviation has been proposed (see, for example, Patent Document 1).
JP-A-11-297588

  However, conventionally, in the mask pattern dimension measurement using the SEM, the mask pattern to be measured is caused by the problem of reproducibility of the dimensional difference in the screen, the problem of the temporal change of the dimension, the problem of the temporal change of the dimension difference between the magnifications, etc. There was a case where an error occurred in the dimension.

  Here, the problem of reproducibility of the in-screen dimensional difference is, for example, when the dimension measurement is performed by projecting a mask pattern in the center of the SEM screen, and when the dimension measurement is performed by projecting toward the edge of the screen. Then, even if the mask pattern is the same, a difference occurs in the obtained dimension, and further, reproducibility is not recognized in the dimension difference. Therefore, when the entire mask pattern is projected on the screen, both ends of the mask pattern may be positioned at the edges of the screen depending on the measurement magnification. When a dimension is measured, the dimension may be different from the actual dimension.

  The problem of dimensional change over time refers to the case where the dimensions measured for the same mask pattern change every measurement, for example, every measurement day. This is because the amount of change increases as the pattern size increases due to the SEM correction principle.

  In addition, the problem of temporal change in the dimensional difference between magnifications is that the dimensions measured with respect to the same mask pattern cause a difference when the measurement magnification is changed, and the relationship between each measurement, for example, the measurement date This is the case that changes every time. Therefore, if the mask pattern size was measured at the normal measurement magnification when it was lowered below the normal measurement magnification so that the entire mask pattern would fit within the screen, it would have been obtained. There may be differences between the expected dimensions. Therefore, it is impossible to compare with the dimensions of other mask patterns as they are.

  In dimension measurement of a mask pattern using an SEM, such a plurality of factors often occur at the same time, and it is extremely difficult to separate and identify the factors. As described above, in the conventional mask pattern dimension measurement, even if the mask pattern is formed as designed, a measurement error may occur due to the SEM that is a dimension measuring apparatus, and the reliability In some cases, the dimension of the mask pattern cannot be obtained.

FIG. 12 is a diagram showing another example of the mask pattern.
The mask pattern formed on the mask includes an isolated pattern 200 in which no other mask pattern exists around the mask pattern. Even for such an isolated pattern 200, it is originally necessary to guarantee the position of the pattern edge at the tip.

  Even if the mask pattern itself does not completely enter the SEM screen at a predetermined measurement magnification, other mask patterns at the tip and its periphery are projected at that measurement magnification, so that the other mask pattern is used as a reference. In some cases, it is possible to grasp the relative position of the tip.

  However, in the case of the isolated pattern 200, there is no other mask pattern that serves as a reference around the periphery of the isolated pattern 200, so that the position of the tip cannot be grasped. If the measurement magnification is lowered until another mask pattern appears together with the isolated pattern 200, the above-described problem of dimensional difference between magnifications and the like also occur. For this reason, it is currently impossible to guarantee the accuracy of such an isolated pattern 200.

  The present invention has been made in view of these points, and an object of the present invention is to provide a mask and a mask pattern dimension measuring method capable of measuring the dimension of the mask pattern with high accuracy.

  In order to solve the above-described problems, the present invention provides a mask that can be realized by the configuration illustrated in FIG. The mask of the present invention is characterized in that in the mask having a mask pattern, an auxiliary pattern used for measuring the dimension of the mask pattern is provided in the vicinity of the mask pattern.

  According to the mask 10 illustrated in FIG. 1, the dimension measuring auxiliary pattern 12 is disposed in the vicinity of the measurement target pattern 11 which is a mask pattern whose dimension is to be measured. As a result, the position of the measurement target pattern 11 can be measured with reference to the auxiliary pattern 12 and the dimension of the measurement target pattern 11 can be obtained based on the measurement.

  According to the present invention, in order to solve the above-mentioned problem, in the mask pattern dimension measuring method, the mask pattern dimension is determined by measuring the position of the mask pattern with respect to the auxiliary pattern arranged in the vicinity of the mask pattern. A method for measuring a dimension of a mask pattern is provided.

  According to such a mask pattern dimension measuring method, it is possible to measure the position of the pattern to be measured with reference to the auxiliary pattern arranged in the vicinity of the mask pattern, and obtain the mask pattern dimension based on the measured position. Become.

  In the present invention, the auxiliary pattern is arranged in the vicinity of the mask pattern whose dimension is to be measured, the position of the mask pattern with respect to the auxiliary pattern is measured, and the dimension is measured. Thereby, the amount of variation from the design value of the mask pattern can be accurately measured, and the dimension of the mask pattern can be obtained with high accuracy. Further, since the dimension of the mask pattern can be obtained with high accuracy, a high-quality device can be manufactured.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a plan view of an essential part showing a configuration example of a mask.
In the mask 10 shown in FIG. 1, a light-shielding film is formed of, for example, chromium (Cr) or molybdenum silicide (MoSi) on a glass substrate such as quartz, and a light-transmitting portion that transmits light at the time of transfer onto the wafer. A light blocking portion that blocks light is formed. As the translucent portion of the mask 10, a measurement target pattern 11 whose dimensions are to be measured, and a minute auxiliary pattern 12 for measuring the dimensions of the measurement target pattern 11 are formed in the vicinity of the tip portion thereof.

The measurement target pattern 11 is formed corresponding to a circuit pattern transferred onto a wafer in device manufacture.
Further, the auxiliary pattern 12 maintains its function even after the transfer without affecting the function that the circuit pattern should originally have when the measurement target pattern 11 is transferred and the circuit pattern is formed on the wafer. It is formed in such a shape and dimension. Further, the auxiliary pattern 12 is formed at a position where the function is maintained after the transfer without affecting the function that the circuit pattern should have.

  Therefore, it is desirable that the auxiliary pattern 12 is formed at an appropriate position and has a size that does not affect the size of the circuit pattern after transfer, and most preferably, the pattern is not resolved during transfer onto the wafer. . Therefore, when designing the mask 10, it is necessary to sufficiently consider the dimension of the auxiliary pattern 12 and the distance from the measurement target pattern 11. Details of the dimension and distance of the auxiliary pattern 12 will be described later.

  In this way, by forming the auxiliary pattern 12 together with the measurement target pattern 11, after the mask 10 is formed, the distance between the measurement target pattern 11 and the auxiliary pattern 12 is measured using the SEM. The dimension of the pattern 11 can be obtained with high accuracy. Below, the dimension measuring method of the mask pattern of the mask 10 using SEM is demonstrated.

FIG. 2 is an explanatory diagram of a method for measuring the dimension of the mask pattern.
When measuring the dimension of the measurement target pattern 11, first, the pattern edge (pattern edge facing the auxiliary pattern 12) 11 a of the measurement target pattern 11 and the left side of the auxiliary pattern 12 in the figure (the side far from the measurement target pattern 11). A distance W1 from the pattern edge 12a is measured.

  Subsequently, similarly, the distance W2 between the pattern edge 11a of the measurement target pattern 11 and the pattern edge 12b on the right side (the side close to the measurement target pattern 11) of the auxiliary pattern 12 is measured.

  Then, a distance W (= (W1 + W2) / 2) between the pattern edge 11a of the measurement target pattern 11 and the gravity center position of the auxiliary pattern 12 (intermediate position between the pattern edges 12a and 12b) is calculated.

  After calculating the distance W in this manner, the amount of deviation from the design value W ′ of the distance between the pattern edge 11a of the measurement target pattern 11 and the gravity center position of the auxiliary pattern 12 (= W−W) ′) Is calculated. This deviation amount becomes a variation amount of the position of the pattern edge 11 a of the measurement target pattern 11.

  It is possible to calculate the amount of variation in the position of the pattern edge 11a of the measurement target pattern 11 by using one of the distances W1 and W2 as the distance between the measurement target pattern 11 and the auxiliary pattern 12. As described above, by calculating the distance W based on the position of the center of gravity of the auxiliary pattern 12, the influence of the dimensional error of the auxiliary pattern 12 itself can be removed.

  Although only one tip portion of the measurement target pattern 11 is shown in FIG. 2, the positional relationship between the other tip portion of the measurement target pattern 11 shown in FIG. Thus, the variation amount of the position of the pattern edge is calculated. Then, the dimension of the measurement target pattern 11 is obtained from the fluctuation amount of the positions of both pattern edges.

  As described above, by providing the auxiliary pattern 12 in the vicinity of the tip of the measurement target pattern 11, the position variation of the pattern edge of the measurement target pattern 11 can be accurately quantified, and the dimension of the measurement target pattern 11 can be accurately determined. It becomes possible to ask.

  Further, since the auxiliary pattern 12 is provided, the variation amount of the position of the pattern edge can be measured with the auxiliary pattern 12 and the tip of the measurement target pattern 11 projected near the center of the screen. It becomes possible to greatly reduce the measurement error due to the above.

  Furthermore, since the auxiliary pattern 12 is very small, it is possible to reduce the amount of change in dimension over time in the SEM, and to greatly reduce measurement errors caused by the change in dimension over time.

  Further, even if the measurement target pattern 11 is a relatively large one of about 2.5 μm to 3.0 μm, another mask around the submicron level is further obtained with the tip of the measurement target pattern 11 projected near the center of the screen. Since the measurement can be performed at the same magnification as the pattern, it is possible to eliminate a measurement error caused by a dimensional difference between magnifications and a change with time.

  Next, the dimension of the auxiliary pattern 12 to be considered when designing the mask 10 and the distance between the measurement target pattern 11 and the auxiliary pattern 12 will be described. Here, light intensity simulation is performed using the mask pattern shown in FIG. 3 as a model.

FIG. 3 is a plan view of the main part of the evaluation mask used in the light intensity simulation.
In the evaluation mask 20 shown in FIG. 3, a measurement target pattern 21 and auxiliary patterns 22 are formed in the vicinity of both ends thereof. The measurement target pattern 21 is formed in a size of 0.6 μm × 2.5 μm. For such an evaluation mask 20, as described above, the dimension (S) of the auxiliary pattern 22 that does not affect the dimension of the circuit pattern after transfer, the distance (D) between both pattern edges of the measurement target pattern 21 and the auxiliary pattern 22. ) Was obtained by light intensity simulation. Table 1 shows the simulation conditions.

  The mask types are a binary mask (No. 1) using Cr as a light shielding film material and a halftone phase cyst mask (hereinafter referred to as “halftone mask”) (No. 2) using MoSi as a shifter material. There were two types. For any mask type, the exposure wavelength is set to a wavelength (193 nm) when an ArF excimer laser is used as a light source. At this time, the transmittance of the halftone mask is about 6%. The numerical aperture (NA) of the lens is 0.70, and the NA ratio (σ) between the light source and the lens is 0.80 for the binary mask and 0.85 / 0.425 for the halftone mask.

  The auxiliary pattern 22 has a dimension S of 0.1 μm, 0.2 μm, or 0.3 μm for any mask type, and a distance D of 0.2 μm, 0.4 μm, 0.6 μm, 1.2 μm, The simulation is performed as one of 2.4 μm. The values of dimension S and distance D shown in Table 1 are dimension values on the evaluation mask 20.

This light intensity simulation is performed for the case of reducing exposure on the wafer at a magnification of 1/4 for any mask type.
4 to 6 show the light intensity simulation results of the binary mask. Here, FIG. 4 is a diagram showing a light intensity simulation result when S = 0.1 μm of the binary mask, FIG. 5 is a diagram showing a light intensity simulation result when S = 0.2 μm of the binary mask, and FIG. It is a figure which shows the light intensity simulation result in case S = 0.3 micrometer of a binary mask.

  4 to 6, the horizontal axis represents the defocus amount (μm) of the exposure apparatus, and the vertical axis is formed on the wafer when the circuit pattern formed on the wafer and the auxiliary pattern 22 are not provided. The dimensional variation (nm) between the circuit pattern is shown. 4 to 6, the distance D is 0.2 μm, 0.4 μm, 0.6 μm, 1.2 μm, and 2.4 μm when the dimension S is 0.1 μm, 0.2 μm, and 0.3 μm, respectively. , The relationship between the defocus amount of the exposure apparatus and the dimensional variation of the circuit pattern is plotted.

  From the light intensity simulation results shown in FIGS. 4 to 6, there is no arrangement condition of the auxiliary pattern 22 such that the dimensional variation amount of the circuit pattern formed on the wafer becomes zero. Therefore, here, it is assumed that the allowable value of the dimensional variation amount of the circuit pattern by forming the auxiliary pattern 22 is 1 nm or less on both sides. It should be noted that if the amount of dimensional variation is within this allowable value, it can be said that the size of the circuit pattern after transfer is not affected.

  When the dimension S is 0.1 μm, the dimensional variation amount of the circuit pattern becomes 1 nm or less when the distance D is 0.6 μm, 1.2 μm, and 2.4 μm from FIG. When the dimension S is 0.2 μm, the dimensional variation of the circuit pattern becomes 1 nm or less when the distance D is 1.2 μm and 2.4 μm from FIG. When the dimension S is 0.3 μm, the dimensional variation amount of the circuit pattern becomes 1 nm or less when the distance D is 1.2 μm and 2.4 μm from FIG. Therefore, the arrangement conditions of the auxiliary pattern 22 for the binary mask can be set such that the dimension S ≦ 0.3 μm and the distance D ≧ 1.2 μm.

  Here, considering the arrangement conditions of the auxiliary pattern 22 from the viewpoint of mask manufacturing, it is appropriate that the dimension S can secure a maximum value, that is, a margin of pattern resolution in mask manufacturing. For the distance D, it is preferable to select a minimum value at which the auxiliary pattern 22 is not greatly separated from the measurement target pattern 21 and the SEM measurement error can be reduced most. Therefore, in the case of a binary mask, the dimension S = 0.3 μm and the distance D = 1.2 μm can be obtained as appropriate arrangement conditions for the auxiliary pattern 22.

  FIG. 7 to FIG. 9 show the light intensity simulation results of the halftone mask. Here, FIG. 7 is a diagram showing a light intensity simulation result when S = 0.1 μm of the halftone mask, and FIG. 8 is a diagram showing a light intensity simulation result when S = 0.2 μm of the halftone mask. 9 is a diagram showing a light intensity simulation result when S = 0.3 μm of the halftone mask.

  7 to 9, the horizontal axis represents the defocus amount (μm) of the exposure apparatus, and the vertical axis is formed on the wafer when the circuit pattern formed on the wafer and the auxiliary pattern 22 are not provided. The dimensional variation (nm) between the circuit pattern is shown. 7 to 9, the distance D is 0.2 μm, 0.4 μm, 0.6 μm, 1.2 μm, and 2.4 μm when the dimension S is 0.1 μm, 0.2 μm, and 0.3 μm, respectively. , The relationship between the defocus amount of the exposure apparatus and the dimensional variation of the circuit pattern is plotted.

  From the light intensity simulation results shown in FIGS. 7 to 9, there is no arrangement condition of the auxiliary pattern 22 so that the dimensional variation amount of the circuit pattern formed on the wafer becomes zero. Similarly, the allowable value of the dimensional variation amount of the circuit pattern due to the formation of the auxiliary pattern 22 is assumed to be 1 nm or less.

  When the dimension S is 0.1 μm, the dimensional variation amount of the circuit pattern becomes 1 nm or less when the distance D is 1.2 μm and 2.4 μm from FIG. The dimension variation of the circuit pattern is 1 nm or less when the dimension S is 0.2 μm, as shown in FIG. 8, when the distance D is 1.2 μm and 2.4 μm. When the dimension S is 0.3 μm, the dimension variation amount of the circuit pattern becomes 1 nm or less when the distance D is 2.4 μm from FIG.

  Then, when the arrangement condition of the auxiliary pattern 22 is obtained as in the case of the binary mask, the dimension S = 0.3 μm and the distance D = 2.4 μm are obtained. However, disposing the auxiliary pattern 22 at a distance of 2.4 μm from the measurement target pattern 21 having a size of 0.6 μm × 2.5 μm has no merit in dimensional measurement and is not significantly different from the conventional situation. Therefore, in the case of a halftone mask, the proper arrangement conditions of the auxiliary pattern 22 can be set to dimension S = 0.2 μm and distance D = 1.2 μm.

  Note that the proper arrangement condition of the auxiliary pattern 22 with respect to the measurement target pattern 21 varies depending on whether it is a binary mask or a halftone mask as described above. Basically, if the dimension S is increased in order to stably manufacture the mask, the distance D needs to be increased in order to prevent fluctuations in the circuit pattern dimension due to the transmitted light from the auxiliary pattern 22. When forming the auxiliary pattern 22, it is necessary to set the dimension S and the distance D for each mask type and each measurement target pattern 21 in consideration of such a relationship.

  Although the light intensity simulation result when the reduction magnification at the time of exposure is set to 1/4 has been described here, when the reduction magnification is changed, the conditions of the dimension S and the distance D of the auxiliary pattern 22 are changed. Must be set.

  By forming a mask based on the light intensity simulation results as described above, the amount of variation in the position of the pattern edge of the measurement target pattern can be measured using the auxiliary pattern, and the dimension of the mask pattern can be obtained accurately. Will be able to.

  Further, by forming the auxiliary pattern as described above, it is possible to measure the variation amount of the position of the pattern edge of an isolated pattern, which could not be measured conventionally.

FIG. 10 is a plan view of an essential part showing a configuration example of a mask on which an isolated pattern is formed.
In the isolated pattern 30 shown in FIG. 10, a measurement target pattern 31 corresponding to a circuit pattern to be transferred and formed on the wafer, and an auxiliary pattern 32 are formed near the tip.

  As described above, the auxiliary pattern 32 is formed in the vicinity of the tip portion of the isolated measurement target pattern 31, so that the pattern can be obtained at an appropriate measurement magnification even if there is no other mask pattern in the vicinity thereof. It becomes possible to accurately measure the fluctuation amount of the edge position.

  As described above, in the present invention, by arranging an auxiliary pattern for dimension measurement in the vicinity of a measurement target pattern, the amount of variation in the position of the pattern edge is accurately measured to accurately determine the dimension of the mask pattern. This is effective as a pattern dimension guarantee method. Furthermore, since the variation amount of the position of the pattern edge can be strictly managed, the occurrence of contact failure in device manufacturing can be reduced, and a high-quality device can be manufactured.

It is a principal part top view which shows the structural example of a mask. It is explanatory drawing of the dimension measuring method of a mask pattern. It is a principal part top view of the mask for evaluation used for light intensity simulation. It is a figure which shows the light intensity simulation result in case S = 0.1 micrometer of a binary mask. It is a figure which shows the light intensity simulation result in case S = 0.2 micrometer of a binary mask. It is a figure which shows the light intensity simulation result in case S = 0.3 micrometer of a binary mask. It is a figure which shows the light intensity simulation result when S = 0.1 micrometer of a halftone mask. It is a figure which shows the light intensity simulation result in case S = 0.2 micrometer of a halftone mask. It is a figure which shows the light intensity simulation result when S = 0.3 micrometer of a halftone mask. It is a principal part top view which shows the structural example of the mask in which the isolated pattern was formed. It is a figure which shows an example of a mask pattern. It is a figure which shows another example of a mask pattern.

Explanation of symbols

10 Mask 11, 21, 31 Pattern to be measured 11a, 12a, 12b Pattern edge 12, 22, 32 Auxiliary pattern 20 Mask for evaluation 30 Isolated pattern

Claims (10)

In a mask having a mask pattern,
A mask having an auxiliary pattern used for measuring a dimension of the mask pattern in the vicinity of the mask pattern.   2. The mask according to claim 1, wherein the auxiliary pattern is formed in the vicinity of the end portion of the mask pattern so as to face the end portion.   The auxiliary pattern has a shape and a dimension that a function of a circuit pattern formed by transferring the mask pattern onto a substrate is maintained after the transfer, and a function of the circuit pattern is maintained after the transfer. The mask according to claim 1, wherein the mask is formed at a certain position.   The mask according to claim 1, wherein the auxiliary pattern is formed with a dimension that is not pattern-resolved when the mask pattern is transferred to a substrate. In the mask pattern dimension measuring method,
A method for measuring a dimension of a mask pattern, wherein the dimension of the mask pattern is obtained by measuring a position of the mask pattern with respect to an auxiliary pattern arranged in the vicinity of the mask pattern.   6. The method for measuring a dimension of a mask pattern according to claim 5, wherein the auxiliary pattern is formed in the vicinity of the end of the mask pattern so as to face the end.   The position of the mask pattern with respect to the auxiliary pattern arranged in the vicinity of the mask pattern is measured, and the dimension of the mask pattern is obtained based on a difference between the position of the mask pattern and a design value. 5. A method for measuring a dimension of a mask pattern according to 5. When measuring the position of the mask pattern with respect to the auxiliary pattern,
6. The method of measuring a dimension of a mask pattern according to claim 5, wherein the position of the mask pattern with respect to the auxiliary pattern is measured by measuring a position of a pattern edge of the mask pattern with respect to the auxiliary pattern. When measuring the position of the mask pattern with respect to the auxiliary pattern,
6. The dimension of a mask pattern according to claim 5, wherein a position of the mask pattern with respect to the auxiliary pattern is measured by measuring a distance between a gravity center position of the auxiliary pattern and a pattern edge of the mask pattern. Measuring method. When measuring the distance between the gravity center position of the auxiliary pattern and the pattern edge of the mask pattern,
Of the pattern edges of the auxiliary pattern, measure the distance between the pattern edge far from the pattern edge of the mask pattern and the pattern edge of the mask pattern,
Measure the distance between the pattern edge of the auxiliary pattern and the pattern edge on the side close to the pattern edge of the mask pattern, and the pattern edge of the mask pattern,
Calculate the average value of the distance between the measured pattern edge on the far side and the pattern edge of the mask pattern and the distance between the measured pattern edge on the near side and the pattern edge of the mask pattern Measuring the distance between the gravity center position of the auxiliary pattern and the pattern edge of the mask pattern,
The method for measuring a dimension of a mask pattern according to claim 9.

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