JP2010150640A - Inline-type vapor deposition apparatus, vapor deposition method using mask, and method for manufacturing organic-electroluminescence device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an inline-type vapor deposition apparatus which can control a film thickness with high accuracy and also requires only few sheets of masks for vapor deposition even when continuously conducting the vapor deposition onto articles each having a different vapor deposition pattern; a vapor deposition method using a mask; and a method for manufacturing an organic-electroluminescence device. <P>SOLUTION: The inline-type vapor deposition apparatus 100 has a first vapor deposition area 110 having a vapor deposition source 120 and masks 131 and 132 for vapor deposition and a second vapor deposition area 210 having a vapor deposition source 220 and masks 231 and 232 for vapor deposition provided along a transportation path for a substrate 20 to be treated; and transports the substrate 20 to be treated along the transportation path, while temporarily stopping the substrate 20 to be treated at such positions that the substrate overlaps with the masks 131, 132, 231 and 232 for vapor deposition, in the first vapor deposition area 110 and the second vapor deposition area 210. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention relates to an in-line type vapor deposition apparatus, a mask vapor deposition method, and an organic electroluminescence device manufacturing method for performing vapor deposition in order on a substrate to be processed in a plurality of vapor deposition areas.

In manufacturing various semiconductor devices and electro-optical devices, a thin film may be formed on a substrate to be processed using a vapor deposition method such as vacuum vapor deposition or sputter vapor deposition. For example, when manufacturing an organic electroluminescence device, each layer (hole injection transport layer, light emitting layer, electron injection) that forms an organic electroluminescence element by depositing a low molecular material or metal on a substrate to be processed by vacuum deposition. Transport layer, cathode, etc.).

As a vapor deposition apparatus for performing such film formation, while providing a plurality of vapor deposition areas along the conveyance path of the substrate to be processed, the substrate to be processed and the vapor deposition mask are overlapped by the holder,
An in-line type vapor deposition apparatus that sequentially conveys each of the plurality of vapor deposition areas has been proposed (see, for example, Patent Document 1).
JP 2005-285576 A

However, in the case of carrying out a plurality of film formations having different vapor deposition patterns in the case of a system in which the substrate to be processed and the vapor deposition mask are integrally transported to the vapor deposition area as in the inline vapor deposition apparatus described in the cited document 1. It is necessary to exchange the vapor deposition mask on the way. For this reason, when processing a large number of substrates to be processed, there is a problem in that vapor deposition masks corresponding to the number of substrates to be processed flowing on the in-line type vapor deposition apparatus are required.

Moreover, in the in-line type vapor deposition apparatus described in the cited document 1, since the film thickness is controlled by the time during which the substrate to be processed passes through the vapor deposition area, there is a problem that the film thickness accuracy is low.

In view of the above problems, an object of the present invention is to provide an in-line type vapor deposition apparatus and mask that can control the film thickness with high accuracy and can reduce the number of vapor deposition masks even when vapor deposition with different vapor deposition patterns is performed continuously. It is providing the vapor deposition method and the manufacturing method of an organic electroluminescent apparatus.

In order to solve the above problems, an in-line type vapor deposition apparatus according to the present invention includes a plurality of vapor deposition areas provided along a conveyance path of a substrate to be processed, a vapor deposition source disposed in the vapor deposition area, and the vapor deposition area. A deposition mask fixed to the substrate, and a substrate transport mechanism that transports the substrate to be processed along the transport path while temporarily stopping the substrate to be processed at a position overlapping the deposition mask in the deposition area. It is characterized by that.

In the mask vapor deposition method according to the present invention, a plurality of vapor deposition areas including a vapor deposition source and a vapor deposition mask are provided along a transport path of the substrate to be processed, and the substrate to be processed is used for the vapor deposition in the vapor deposition area. The substrate to be processed is transported along the transport path while being temporarily stopped at a position overlapping with the mask.

In the present invention, since the in-line type vapor deposition apparatus is used, the floor area occupied by the vapor deposition apparatus is smaller than that of the cluster type vapor deposition apparatus. Moreover, in the present invention, although it is an in-line type vapor deposition apparatus,
In any vapor deposition area, the vapor deposition mask is fixed, and the substrate to be processed is sequentially transferred to a position overlapping the vapor deposition mask. For this reason, since it is not necessary to replace the vapor deposition mask even when a plurality of films having different vapor deposition patterns are formed, the configuration of the in-line vapor deposition apparatus can be simplified. Further, even when a large number of substrates to be processed are continuously processed, the manufacturing cost can be reduced because the number of deposition masks corresponding to the number of substrates to be processed flowing on the in-line deposition apparatus is not required. Moreover, in this invention, although it is an inline type vapor deposition apparatus, it vapor-deposits in the state which the to-be-processed substrate stopped in the vapor deposition area. For this reason, since the film thickness can be controlled by directly controlling the deposition time for one substrate to be processed, the accuracy of the film thickness as compared with the method in which the film thickness is controlled by the conveyance speed of the substrate to be processed. Is expensive.

In the in-line type deposition apparatus according to the present invention, the deposition area includes an upstream deposition unit and a downstream deposition unit adjacent to each other, and the deposition source is between the upstream deposition unit and the downstream deposition unit. Provided as a common vapor deposition source, the vapor deposition mask is disposed in each of the upstream vapor deposition section and the downstream vapor deposition section with the same mask pattern, and the substrate transport mechanism is arranged in the vapor deposition area in the upstream vapor deposition section. It is preferable to transport the substrate to be processed along the transport path while temporarily stopping the substrate to be processed at a position overlapping the vapor deposition mask of the portion and a position overlapping the vapor deposition mask of the downstream vapor deposition portion. .

That is, in the mask vapor deposition method according to the present invention, an upstream vapor deposition section and a downstream vapor deposition section that are adjacent to each other are provided for the vapor deposition area, and the vapor deposition source includes the upstream vapor deposition section and the downstream vapor deposition section. In addition to being provided as a common vapor deposition source, the vapor deposition mask having the same mask pattern is provided in each of the upstream vapor deposition section and the downstream vapor deposition section,
In the vapor deposition area, the substrate to be processed is suspended while temporarily stopping the substrate to be processed at a position overlapping the vapor deposition mask of the upstream vapor deposition section and a position overlapping the vapor deposition mask of the downstream vapor deposition section. It is preferable to carry along.

In the present invention, since vapor deposition is performed in a state where the substrate to be treated is stopped, the film thickness may vary on the substrate to be treated due to the positional relationship between the substrate to be treated and the vapor deposition source. Is divided into an upstream vapor deposition section and a downstream vapor deposition section to perform the vapor deposition twice, so that variations in film thickness on the substrate to be treated due to the positional relationship between the substrate to be treated and the vapor deposition source can be suppressed. .

In the present invention, the vapor deposition area preferably includes a film forming shutter that opens and closes a path from the vapor deposition source to the vapor deposition mask. According to such a configuration, since the film thickness can be controlled by the opening time of the film forming shutter, the film thickness is highly accurate.

The in-line vapor deposition apparatus according to the present invention preferably includes an alignment mechanism for aligning the vapor deposition mask and the substrate to be processed. According to such a configuration, alignment between the substrate to be processed and the vapor deposition mask can be performed accurately. For this reason, even when the method of overlapping the deposition mask and the substrate to be processed in each deposition area is employed, the positional accuracy of the thin film on the substrate to be processed is high.

The mask vapor deposition method to which the present invention is applied can be used in a method for manufacturing an organic electroluminescence device. In this case, in at least one vapor deposition area among the plurality of vapor deposition areas, a thin film constituting an organic electroluminescence element is formed on the substrate to be processed.

With reference to the drawings, an in-line type vapor deposition apparatus and a mask vapor deposition method to which the present invention is applied will be described. In addition, in the following embodiment, the case where an organic electroluminescent apparatus (organic EL apparatus) is manufactured using the in-line type vapor deposition apparatus of this invention as a mask vapor deposition method is illustrated.

(Configuration example of organic EL device)
FIG. 1 is a cross-sectional view of an essential part of an organic EL device to which the present invention is applied. An organic EL device 1 shown in FIG. 1 is used as a line head used in a display device or an electrophotographic printer, and includes a light emitting element group 3A formed by arranging a plurality of organic EL elements 3. I have. The organic EL element 3 includes, for example, a pixel electrode 4 made of an ITO (Indium Tin Oxide) film functioning as an anode, a hole injection / transport layer 5 for injecting / transporting holes from the pixel electrode 4, and an organic EL material. A light emitting layer 6 made of the above, an electron injecting and transporting layer 7 for injecting / transporting electrons, and a cathode 8 made of aluminum or an aluminum alloy. On the cathode 8 side, the organic EL element 3
A sealing layer and a sealing member (not shown) for preventing the deterioration of water due to moisture and oxygen are disposed. On the element substrate 2, a driving transistor 2a electrically connected to the pixel electrode 4 is provided.
The circuit part 2b including the above is formed on the lower layer side of the organic EL element 3.

When the organic EL device 1 is used as a color display device, the organic EL element 3 may be configured to emit light of each color. In this case, the hole injection transport layer 5 and the light emitting layer 6
, For each corresponding color, the organic EL element 3 emits red (R) light, and the organic EL element 3 (green) emits green (G) light. G), blue (
The organic EL element 3 (B) that emits the light B) is configured.

When the organic EL device 1 is a bottom emission method, light emitted from the light emitting layer 6 is emitted from the pixel electrode 4 side, so that the base of the element substrate 2 is glass, quartz, resin (plastic, plastic film) A transparent substrate such as is used. At this time, if the cathode 8 is formed of a light reflecting film, the light emitted from the light emitting layer 6 can be reflected by the cathode 8 and emitted from the transparent substrate side. On the other hand, when the organic EL device 1 is a top emission method, the light emitted from the light emitting layer 6 is emitted from the cathode 8 side, and therefore the base of the element substrate 2 does not need to be transparent. However, even when the organic EL device 1 is a top emission type, a light is emitted from the light emitting layer 6 by disposing a reflective layer (not shown) on the surface opposite to the light emitting side with respect to the element substrate 2. Is emitted from the cathode 8 side, it is necessary to use a transparent substrate as the base of the element substrate 2. When the organic EL device 1 is a top emission system, a reflective layer is formed between the base of the element substrate 2 and the light emitting layer 6, and light emitted from the light emitting layer 6 is emitted from the cathode 8 side. In some cases, the base of the element substrate 2 does not need to be transparent.

In forming the element substrate 2, in addition to a method of performing a vapor deposition process or the like on a single-sized substrate, after performing a vapor deposition process or the like on a large substrate that can take a large number of element substrates 2, as described later, A method of cutting into a single-sized element substrate 2 is employed. In the following description, the substrate 20 is referred to regardless of size.

In order to manufacture the organic EL device 1, each layer is formed on the substrate to be processed 20 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. However, since the hole injecting and transporting layer 5, the light emitting layer 6, the electron injecting and transporting layer 7 and the like are made of a low molecular organic material that easily deteriorates due to moisture or oxygen, the hole injecting and transporting layer 5, the light emitting layer 6, the electron injecting and transporting When the layer 7 is formed, and further, when the cathode 8 is formed in the upper layer of the electron injection / transport layer 7, a patterning process using a resist mask is performed, and when the resist mask is removed with an etching solution or oxygen plasma. In addition, the hole injecting and transporting layer 5, the light emitting layer 6, and the electron injecting and transporting layer 7 are deteriorated by moisture and oxygen. Therefore, in this embodiment, when forming thin films such as the hole injection transport layer 5, the light emitting layer 6, and the electron injection transport layer 7, and further when forming the cathode 8 (thin film), a vapor deposition apparatus described below. Further, mask deposition is performed using a deposition mask, and a patterning process using a resist mask is not performed.

(Configuration of evaporation mask)
Before describing the in-line type vapor deposition apparatus to which the present invention is applied, the configuration of the vapor deposition mask will be described with reference to FIG. FIG. 2 is an explanatory diagram of a vapor deposition mask. Among the vapor deposition masks shown in FIGS. 2A and 2B, the vapor deposition mask shown in FIG. 2A is a rectangular thin plate-shaped mask member 31 having a thickness of about 0.25 to 0.5 mm. The structure is attached to a frame-shaped frame 33. Each of the mask member 31 and the frame 33 is made of a metal material (for example, stainless steel, invar, 42 alloy,
Nickel alloy, etc.), glass, ceramics, silicon, etc., and the mask member 31 is made of silicon. In the mask member 31, a plurality of mask openings 310 corresponding to the vapor deposition pattern formed on the substrate 20 to be processed are formed in parallel and at regular intervals. The frame 33 is disposed between the support substrate 34 in which the opening region 340 having a size substantially equal to that of the mask member 31 is formed and the mask opening 310 of the mask member 31 to support the mask opening 310. A beam part 35 and a fixing member 36 that applies a tensile force in the longitudinal direction to the beam part 35 and fixes the beam part 35 to the support substrate 34 are provided. The beam portion 35 is between the mask openings 310 and the mask openings 31.
It is arranged along the longitudinal direction of 0, and has a width dimension narrower than the region sandwiched by the mask openings 310. The beam portion 35 is made of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy), glass, ceramics, silicon, SUS430, or the like.

The vapor deposition mask shown in FIG. 2B has a configuration in which a plurality of chip-shaped mask members 31 are attached to a support substrate 37 that forms a base substrate, and each of the plurality of mask members 31 is aligned. It is bonded to the support substrate 37 by a method such as anodic bonding or adhesive. Support substrate 3
7, a plurality of opening regions 370 are provided in parallel and at regular intervals, and each of the plurality of mask members 31 is fixed on the support substrate 37 so as to close the opening regions 370. The mask member 31 has a long hole-shaped mask opening 3 corresponding to the vapor deposition pattern for the substrate 20 to be processed.
A plurality of 10 are provided in parallel at regular intervals. The mask member 31 is made of single crystal silicon having a plane orientation (100), single crystal silicon having a plane orientation (110), or the like, and the mask opening 310 is made of a photolithography technique or an organic system such as tetramethylaluminum oxide. It is formed by a wet etching technique using an alkaline aqueous solution such as an inorganic hydroxide such as potassium hydroxide or sodium hydroxide. As the support substrate 37, a transparent substrate made of alkali-free glass, borosilicate glass, soda glass, quartz, or the like is used.

(Overall configuration of in-line type vapor deposition equipment)
FIG. 3 is an explanatory diagram of an in-line type vapor deposition apparatus to which the present invention is applied, and FIGS. 3 (a) and 3 (b).
, (C) is a plan view schematically showing the configuration of an inline vapor deposition apparatus to which the present invention is applied,
FIG. 6 is a cross-sectional view illustrating a state in which the substrate to be processed 20 is conveyed, and a cross-sectional view when vapor deposition is performed on the substrate to be processed 20. In the following, the transfer direction and transfer path of the substrate 20 to be processed are indicated by arrows L.

As shown in FIG. 3, in the in-line type vapor deposition apparatus 100 of the present embodiment, a plurality of vapor deposition areas are provided along the transfer path of the substrate 20 to be processed. In FIG. 3, among a plurality of vapor deposition areas,
The first vapor deposition area 110 and the second vapor deposition area 210 are shown, and the first vapor deposition area 110 is shown.
The second vapor deposition area 210 is partitioned from the periphery by partition walls 311, 312, and 313. The first vapor deposition area 110 and the second vapor deposition area 210 are each an organic EL element 3 such as the hole injecting and transporting layer 5, the light emitting layer 6, the electron injecting and transporting layer 7 and the cathode 8 described with reference to FIG.
This is an area for depositing a thin film constituting the film.

In the 1st vapor deposition area 110, the vapor deposition source 120 is arrange | positioned in the downward position, and this vapor deposition source 120 is provided.
Consists of a vapor deposition crucible containing materials for forming a thin film such as a hole injection transport layer 5, a light emitting layer 6, an electron injection transport layer 7 and a cathode 8. The first vapor deposition area 110 includes an upstream vapor deposition unit 111 located on the upstream side in the transport direction of the substrate 20 to be processed, and a downstream vapor deposition unit 112 adjacent to the upstream vapor deposition unit 111 on the downstream side. The vapor deposition source 120 is disposed as a common vapor deposition source between the upstream vapor deposition unit 111 and the downstream vapor deposition unit 112.

The upstream vapor deposition unit 111 is provided with a film forming shutter 141 at a position above the vapor deposition source 120. The film-forming shutter 141 is rotatable around the upper end portion of the partition wall 311 located on the upstream side of the first vapor deposition area 110, and is in a closed state covering the vapor deposition source 120 as shown in FIG. As shown in FIG. 3C, the state is switched to the open state retracted from above the vapor deposition source 120. A frame 321 is disposed above the vapor deposition source 120, and when the closed state where the film forming shutter 141 appears above the vapor deposition source 120 as shown in FIG.
The tip of the film forming shutter 141 is held by a frame 321. Further, the downstream vapor deposition section 112
However, like the upstream vapor deposition section 111, the film forming shutter 142 is provided above the vapor deposition source 120. The film formation shutter 142 is a partition wall 31 located on the downstream side of the first vapor deposition area 110.
2 is rotatable about the upper end portion of FIG. 2, and is closed from the upper side of the vapor deposition source 120 as shown in FIG. 3B and retracted from the upper side of the vapor deposition source 120 as shown in FIG. Switch to open state. Similarly to the film-forming shutter 141, the film-forming shutter 142 also has a film-forming shutter 142 in the case where the closed state that appears above the vapor deposition source 120 is maintained as shown in FIG.
Is held by a frame 321.

Similarly to the first vapor deposition area 110, the second vapor deposition area 210 has a vapor deposition source 220 disposed at a lower position. The vapor deposition source 220 includes the hole injection transport layer 5, the light emitting layer 6, the electron injection transport layer 7, and the cathode 8. It consists of a vapor deposition crucible containing a material for forming a thin film such as. Second vapor deposition area 21
Similarly to the first vapor deposition area 110, 0 also includes an upstream vapor deposition unit 211 located on the upstream side in the transport direction of the substrate to be processed 20, and a downstream vapor deposition unit 21 adjacent to the upstream vapor deposition unit 211 on the downstream side.
The vapor deposition source 220 is disposed as a common vapor deposition source between the upstream vapor deposition unit 211 and the downstream vapor deposition unit 212.

In the upstream vapor deposition section 211, a film forming shutter 241 is provided above the vapor deposition source 220. The film-forming shutter 241 is rotatable around the upper end portion of the partition wall 312 located on the upstream side of the second vapor deposition area 210, and is in a closed state covering the top of the vapor deposition source 220 as shown in FIG. As shown in FIG. 3C, the state is switched to the open state retracted from above the vapor deposition source 220. When a frame 322 is disposed above the vapor deposition source 220 and the closed state where the film forming shutter 241 appears above the vapor deposition source 220 as shown in FIG.
The tip of the film forming shutter 241 is held by a frame 322. In addition, the downstream side vapor deposition section 212
However, the film forming shutter 242 is provided above the vapor deposition source 220 as in the upstream vapor deposition unit 211. The film forming shutter 242 is a partition wall 31 located on the downstream side of the second vapor deposition area 210.
3 is rotatable about the upper end portion of FIG. 3, and is closed from the upper side of the vapor deposition source 220 as shown in FIG. 3B and retracted from the upper side of the vapor deposition source 220 as shown in FIG. Switch to open state. Similarly to the film-forming shutter 241, the film-forming shutter 242 also holds the film-forming shutter 242 in the case where the closed state that appears at the upper position of the vapor deposition source 220 as shown in FIG.
Is held by a frame 322.

In the in-line type vapor deposition apparatus 100 configured as described above, in both the first vapor deposition area 110 and the second vapor deposition area 210, the vapor deposition sources 120 and 220 and the film formation shutters 141, 142, 241, and 242 are disposed above the figure. The vapor deposition mask described with reference to 2 is arranged. In this embodiment, the first vapor deposition area 110 and the second vapor deposition area 210 are each
Since the upstream vapor deposition sections 111 and 211 and the downstream vapor deposition sections 112 and 212 are provided, vapor deposition masks 131, 132, 231, and 232 are arranged for each of these four vapor deposition sections.

In disposing the deposition masks 131, 132, 231, and 232 in the first deposition area 110 and the second deposition area 210, in this embodiment, the deposition mask disposed in the upstream deposition section 111 of the first deposition area 110. 131 is fixed to the partition 311 and the frame 321, and the deposition mask 132 disposed in the downstream deposition unit 112 of the first deposition area 110 is
It is fixed to the partition 312 and the frame 321. The vapor deposition mask 231 disposed in the upstream vapor deposition section 211 of the second vapor deposition area 210 is fixed to the partition wall 312 and the frame 322 and is disposed in the downstream vapor deposition section 212 of the second vapor deposition area 210. The mask 232 is
It is fixed to the partition wall 313 and the frame 322.

Here, the mask patterns for vapor deposition masks arranged in the same vapor deposition area have the same mask pattern. That is, the vapor deposition masks 131 and 132 arranged in the first vapor deposition area 110 have the same mask pattern, and the vapor deposition masks 231 and 23 arranged in the second vapor deposition area 210.
2 has the same mask pattern. However, the masks for vapor deposition arranged in different vapor deposition areas have different mask patterns. That is, the vapor deposition masks 131 and 132 disposed in the first vapor deposition area 110 and the vapor deposition mask 231 disposed in the second vapor deposition area 210.
The mask pattern is different from 232.

(Configuration of substrate transport mechanism 400)
FIG. 4 is an explanatory diagram of the substrate transport mechanism 400 used in the in-line type vapor deposition apparatus 100 to which the present invention is applied. As shown in FIG. 4, the substrate transport mechanism 400 used in this embodiment includes a support arm 430 extending along the transport path on both sides of the transport path, a plurality of rollers 410 supported by the support arm 430, and And a plurality of elevating pins 420 arranged at a position below the conveying path. The roller 410 is in a state where the substrate 20 to be processed is supported from below by the roller surface.
As a result of the driving force of a roller driving mechanism (not shown) being transmitted to the support arm 430 via a driving force transmission mechanism (not shown), the roller 20 is rotated as indicated by the arrow LA and transports the substrate 20 to be processed. Transport horizontally along the path. The elevating pins 420 are disposed in the upstream deposition units 111 and 211 and the downstream deposition units 112 and 212 of the first deposition area 110 and the second deposition area 210, and are driven by a lifting pin drive mechanism (not shown). As a result, as shown by the arrow LB, it can move in the vertical direction. Further, the support arm 430 that supports the roller 410 is driven by an arm driving mechanism (not shown), and as a result, can move horizontally in the width direction of the transport path as indicated by an arrow LC.

In the substrate transport mechanism 400 configured as described above, when the roller 410 rotates in the state illustrated in FIGS. 3B and 4A, the substrate 20 to be processed has the first deposition area 110 and the second deposition area 210. Then, the rotation of the roller 410 stops. Next, FIG.
), As shown by the arrow LB1, the elevating pins 420 are lifted to lift the substrate 20 to be processed from the roller surface. Next, as shown by an arrow LC1 in FIG.
Move in directions away from each other. After that, when the elevating pin 420 is lowered, FIG.
As shown in FIG. 3, the substrate 20 to be processed is placed on the deposition masks 131, 132, 231, and 232. Further, if the above operation is performed in reverse, the substrate 20 can be lifted from the deposition masks 131, 132, 231, 232 by the lifting pins 420.

Such an operation is performed simultaneously on a plurality of substrates 20 to be processed. Therefore, in the in-line type vapor deposition apparatus 100, the substrate 20 to be processed is overlapped with the vapor deposition masks 131 and 132 in the first vapor deposition area 110 and the vapor deposition masks 231 and 232 in the second vapor deposition area 210 by the substrate transport mechanism 400. It is transported along the transport path while being temporarily stopped. here,
The first vapor deposition area 110 and the second vapor deposition area 210 are upstream vapor deposition units 111 and 211, respectively.
And downstream side vapor deposition sections 112 and 212. For this reason, the substrate transport mechanism 400 positions the substrate 20 to be overlapped with the deposition mask 131 of the upstream deposition unit 111 in the first deposition area 110, and the deposition mask 132 of the downstream deposition unit 112 in the first deposition area 110. And the position where it overlaps with the vapor deposition mask 231 of the upstream vapor deposition section 211 in the second vapor deposition area 210 and the position where it overlaps with the vapor deposition mask 232 of the downstream vapor deposition section 212 in the second vapor deposition area 210 Transport along the route.

Moreover, in the in-line type vapor deposition apparatus 100 of this embodiment, as shown in FIG. 4A, the alignment mark 25 formed on the substrate 20 to be processed and the vapor deposition masks (vapor deposition masks 131 and 132, The alignment mechanism 460 is configured to optically monitor the alignment marks 39 formed on the optical discs 231 and 232) and to align the substrate 20 to be processed with the deposition masks 131, 132, 231 and 232.

(Mask deposition method)
FIG. 5 is an explanatory diagram of a vapor deposition process performed by the inline vapor deposition apparatus 100 to which the present invention is applied. Referring to FIG. 5, in the in-line type vapor deposition apparatus 100 of the present embodiment, when vapor deposition is performed in the second vapor deposition area 210 after performing vapor deposition in the first vapor deposition area 110 on one substrate 20 to be processed. The operation of will be described. In addition, since the vapor deposition described below is continuously performed on a plurality of substrates to be processed 20, in the following description, among the plurality of substrates to be processed 20 shown in FIG. The vapor deposition process will be described focusing on the substrate 20. Further, the operation described below is automatically performed based on an operation program stored in a memory of a control unit (not shown) of the in-line type vapor deposition apparatus 100.

First, as shown in FIG. 3B, while the substrate transport mechanism 400 is transporting the substrate 20 to be processed, vapor deposition particle flows 120a and 220a are generated from the vapor deposition sources 120 and 220, but the film forming shutters 141 and 142 are formed. , 241 and 242 are in the closed state, so that the deposition on the substrate 20 is not performed.

Next, when the substrate to be processed 20 reaches a position overlapping the vapor deposition mask 131 arranged in the upstream vapor deposition section 111 of the first vapor deposition area 110, the substrate transport mechanism 400 refers to FIG. The described operation is performed, and the substrate 20 to be processed is placed on the evaporation mask 131 as shown in FIG. Until this state is reached, the film-forming shutter 141 is in a closed state, but after the substrate 20 is placed on the vapor deposition mask 131, the film-forming shutter 141 is opened at a predetermined timing. . Such an open state is maintained for a predetermined time, during which a first deposition is performed on the substrate 20 to be processed through the deposition mask 131.

And after predetermined time passes, the film-forming shutter 141 switches to a closed state. next,
The substrate transport mechanism 400 performs the operation opposite to the operation described with reference to FIG.
In the state shown in FIG. 2, the substrate to be processed 20 is conveyed downstream by the roller 410.

Next, when the substrate to be processed 20 reaches a position overlapping the vapor deposition mask 132 disposed in the vapor deposition section 112 on the downstream side of the first vapor deposition area 110, the substrate transport mechanism 400 refers to FIG. The described operation is performed, and the substrate 20 to be processed is placed on the evaporation mask 132 as shown in FIG. Until this state is reached, the film-forming shutter 142 is closed, but after the substrate 20 is placed on the vapor deposition mask 132, the film-forming shutter 142 is opened at a predetermined timing. . Such an open state is maintained for a predetermined time, and during that time, second deposition is performed on the substrate 20 to be processed through the deposition mask 132.

Then, after a predetermined time has elapsed, the film forming shutter 142 is switched to the closed state. The second deposition is set at the same time as the first deposition. Next, the substrate transport mechanism 400 performs an operation opposite to the operation described with reference to FIG. 4, and transports the substrate to be processed 20 to the downstream side by the roller 410 in the state shown in FIG. 3B.

Next, when the substrate to be processed 20 reaches a position overlapping with the vapor deposition mask 231 disposed in the upstream vapor deposition section 211 of the second vapor deposition area 210, the substrate transport mechanism 400 refers to FIG. The described operation is performed, and the substrate 20 to be processed is placed on the evaporation mask 231 as shown in FIG. Until this state is reached, the film-forming shutter 241 is in a closed state. However, after the substrate 20 is placed on the vapor deposition mask 231, the film-forming shutter 241 is opened at a predetermined timing. . Such an open state is maintained for a predetermined time, and during this time, a third vapor deposition is performed on the substrate 20 to be processed through the vapor deposition mask 231.

And after predetermined time passes, the film-forming shutter 241 switches to a closed state. When the third deposition is set at the same time as the first deposition and the second deposition, the third deposition is set at a different time from the first deposition and the second deposition. There is also. Next, the substrate transport mechanism 400 performs an operation opposite to the operation described with reference to FIG.
), The substrate to be processed 20 is transported downstream by the roller 410.

Next, when the substrate to be processed 20 reaches a position overlapping the vapor deposition mask 232 disposed in the vapor deposition section 212 on the downstream side of the second vapor deposition area 210, the substrate transport mechanism 400 refers to FIG. The described operation is performed, and the substrate 20 to be processed is placed on the evaporation mask 232 as shown in FIG. Until this state is reached, the film formation shutter 242 is in a closed state, but after the substrate 20 is placed on the vapor deposition mask 232, the film formation shutter 242 is opened at a predetermined timing. . Such an open state is maintained for a predetermined time, and during this time, a fourth deposition is performed on the substrate 20 to be processed through the deposition mask 232.

Then, after a predetermined time has elapsed, the film forming shutter 242 is switched to the closed state. The fourth deposition is set at the same time as the third deposition. Next, the substrate transport mechanism 400 performs an operation opposite to the operation described with reference to FIG. 4, and transports the substrate 20 to be processed further by the roller 410 in the state shown in FIG. 3B.

Such an operation is continuously performed on a plurality of substrates 20 to be processed. As a result, FIG.
Thin films such as the hole injection / transport layer 5, the light emitting layer 6, the electron injection / transport layer 7 and the cathode 8 constituting the organic EL element 3 described with reference to FIG.

(Main effects of this form)
FIG. 6 is an explanatory diagram of the effect of providing the upstream vapor deposition section and the downstream vapor deposition section in the vapor deposition area in the in-line type vapor deposition apparatus 100 of this embodiment, and FIGS. It is explanatory drawing which shows the film thickness distribution on the to-be-processed substrate at the time of vapor-depositing in an area, and a block diagram of a vapor deposition area.

In this embodiment, since the in-line type vapor deposition apparatus 100 is used, the floor area occupied by the vapor deposition apparatus can be reduced as compared with the cluster type vapor deposition apparatus.

In the present embodiment, the first vapor deposition area 110 including the vapor deposition source 120 and the vapor deposition masks 131 and 132, and the vapor deposition source 220 and the vapor deposition masks 231 and 232 are provided along the transport path of the substrate 20 to be processed. Provided with the second vapor deposition area 210, the substrate 20 to be processed is deposited in the first vapor deposition area 110 and the second vapor deposition area 210 with vapor deposition masks 131, 132, 231.
2, the substrate 20 to be processed is transported along the transport path while being temporarily stopped at a position overlapping with 232. For this reason, although it is an inline system, the 1st vapor deposition area 110 and the 2nd vapor deposition area 21
In any of 0, the deposition masks 131, 132, 231, 232 are fixed, and the substrate 20 to be processed is sequentially transferred to a position overlapping with the deposition masks 131, 132, 231, 232. Accordingly, it is not necessary to replace the vapor deposition mask even when a plurality of films having different vapor deposition patterns are formed, so that the configuration of the in-line vapor deposition apparatus 100 can be simplified.

Moreover, although it is an in-line type, the to-be-processed substrate 20 is vapor-deposited in the state stopped in the 1st vapor deposition area 110 and the 2nd vapor deposition area 210. FIG. For this reason, since the film thickness can be controlled by directly controlling the vapor deposition time for one substrate 20 to be processed, the substrate 20 to be processed
Compared with a method in which the film thickness is controlled by the transfer speed, the accuracy of the film thickness is high. In addition, in this embodiment, since the film forming shutters 141, 142, 241, and 242 that open and close the paths from the vapor deposition sources 120 and 220 to the vapor deposition masks 131, 132, 231, and 232 are provided, the opening time of the film forming shutters is increased. Thus, the film thickness can be controlled. Therefore, according to this embodiment, the accuracy of the film thickness is high.

In this embodiment, as shown in FIG. 6B, upstream vapor deposition sections 111 and 211 and downstream vapor deposition sections 112 and 212 are provided in the first vapor deposition area 110 and the second vapor deposition area 210, and the upstream vapor deposition section. 111 and 211 and the downstream side vapor deposition sections 112 and 212 suspend the substrate to be processed 20 for vapor deposition, so that the positional relationship between the substrate to be processed 20 and the vapor deposition sources 120 and 220 on the substrate to be processed 20 Variation in film thickness can be suppressed.

The reason will be described with reference to FIG. In this embodiment, since the deposition is performed with the substrate 20 to be stopped, the film thickness may vary on the substrate 20 due to the positional relationship between the substrate 20 and the vapor deposition sources 120 and 220. . That is, when vapor deposition is performed by placing a vapor deposition source directly below the substrate 20 to be processed, the substrate to be processed has a large thickness at the center of the substrate 20 to be processed, which is short from the vapor deposition source, and is far from the vapor deposition source. At the end portion of 20, the film thickness becomes thin.

However, as in this embodiment, upstream vapor deposition units 111 and 211 and downstream vapor deposition units 112 and 212 are provided in the first vapor deposition area 110 and the second vapor deposition area 210. For this reason, in the upstream vapor deposition sections 111 and 211, as shown by a one-dot chain line L11 in FIG.
Although the film thickness is increased in the portion located upstream of 0, the downstream vapor deposition sections 112 and 212 are located upstream of the substrate 20 to be processed, as indicated by a two-dot chain line L12 in FIG. In the part, the film thickness becomes thin. Accordingly, the upstream vapor deposition sections 111 and 211 and the downstream vapor deposition sections 112 and 212.
After vapor deposition, the film thickness distribution indicated by the one-dot chain line L11 and the film thickness distribution indicated by the two-dot chain line L12 are synthesized. As a result, the film thickness becomes uniform as shown by the solid line L13 in FIG. Become. Therefore,
According to this embodiment, even if the deposition is performed in a state where the substrate 20 to be processed is stopped, the film thickness on the substrate 20 to be processed due to the positional relationship between the substrate 20 to be deposited and the vapor deposition sources 120 and 220. Variations can be suppressed.

Moreover, the in-line type vapor deposition apparatus 100 of this embodiment has vapor deposition masks 131, 132, and 231.
232 and the substrate 20 to be processed are provided with an alignment mechanism 460. For this reason, even when adopting a method of overlapping the deposition masks 131, 132, 231, 232 and the substrate to be processed 20 in the first deposition area 110 and the second deposition area 210,
Positioning of the deposition masks 131, 132, 231, 232 and the substrate to be processed 20 can be performed accurately. For this reason, the positional accuracy of the thin film on the to-be-processed substrate 20 is high.

(Another configuration example of the substrate transport mechanism 400)
FIG. 7 is an explanatory diagram of another substrate transport mechanism 400 that can be used in the in-line type vapor deposition apparatus 100 to which the present invention is applied. FIGS. 7A and 7B are diagrams of transport beams in the substrate transport apparatus. It is explanatory drawing which shows a structural example, and explanatory drawing which shows the modification.

In the above embodiment, as described with reference to FIGS. 3 and 4, the substrate transport mechanism 400.
A method using a roller 410 and a lift pin 420 was employed. However, the substrate transport mechanism 400 may use two transport beams 490 that support both sides of the substrate 20 to be processed downward as shown in FIG. 7A instead of the rollers 410 and the lifting pins 420. . In the substrate transport mechanism 400, a beam driving mechanism (not shown) causes the two transport beams 490 to move forward as indicated by an arrow L1, descending as indicated by an arrow L2, and retracting as indicated by an arrow L3.
If the ascending operation indicated by the arrow L4 is repeated, a plurality of substrates to be processed 20 can be transferred simultaneously. More specifically, after the substrate to be processed 20 is transported to the downstream side by the forward movement operation indicated by the arrow L1, the substrate 20 to be processed is placed on the evaporation mask during the lowering operation indicated by the arrow L2. it can. Then, after performing the backward movement operation indicated by the arrow L3, if the upward movement operation indicated by the arrow L4 is performed, the substrate 20 to be processed can be lifted from the vapor deposition mask during the movement.

For the operation of the carrier beam 490, the arrows L1, L2, L3, L4 in FIG.
Instead of a rectangular trajectory as shown in FIG. 7, an ellipse or an oval trajectory indicated by an arrow L10 in FIG.

(Other embodiments)
In the above-described embodiment, the upstream vapor deposition units 111 and 211 and the downstream vapor deposition units 112 and 212 are provided in the first vapor deposition area 110 and the second vapor deposition area 210. If not a problem, one vapor deposition unit may be provided in each of the first vapor deposition area 110 and the second vapor deposition area 210.

Moreover, in the said embodiment, although the case where the thin film which comprises the organic EL element 3 was formed was illustrated, you may apply this invention when forming another thin film.

It is principal part sectional drawing of the organic electroluminescent apparatus with which this invention is applied. It is explanatory drawing of the mask for vapor deposition. It is explanatory drawing of the in-line type vapor deposition apparatus to which this invention is applied. It is explanatory drawing of the board | substrate conveyance mechanism used for the in-line type vapor deposition apparatus to which this invention is applied. It is explanatory drawing of the vapor deposition process performed with the in-line type vapor deposition apparatus to which this invention is applied. It is explanatory drawing of the effect of having provided the upstream vapor deposition part and the downstream vapor deposition part in the vapor deposition area in the in-line-type vapor deposition apparatus to which this invention is applied. It is explanatory drawing of another board | substrate conveyance mechanism which can be used with the in-line type vapor deposition apparatus to which this invention is applied.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 .... Organic EL device, 3 .... Organic EL element, 20 .... Substrate to be processed, 100 ... In-line type vapor deposition device, 110 ... First vapor deposition area, 111, 211 ... Upstream vapor deposition section, 112, 2
12 .. Downstream side vapor deposition section, 120, 220 .. Deposition source, 141, 142, 241, 242,
Deposition shutter 131, 132, 231, 232 ... Evaporation mask 210 ... Second deposition area 400 ... Substrate transport mechanism 460 Alignment mechanism

Claims (7)

A plurality of vapor deposition areas provided along the transport path of the substrate to be processed;
A vapor deposition source disposed in the vapor deposition area;
A deposition mask fixed in the deposition area;
A substrate transfer mechanism for transferring the substrate to be processed along the transfer path while temporarily stopping the substrate to be processed at a position overlapping the vapor deposition mask in the vapor deposition area;
An in-line type vapor deposition apparatus characterized by comprising: The vapor deposition area includes an upstream vapor deposition section and a downstream vapor deposition section that are adjacent to each other.
The deposition source is provided as a common deposition source between the upstream deposition unit and the downstream deposition unit,
The vapor deposition mask is disposed in each of the upstream vapor deposition section and the downstream vapor deposition section with the same mask pattern,
The substrate transport mechanism temporarily stops the substrate to be processed at a position overlapping the vapor deposition mask of the upstream vapor deposition section and a position overlapping the vapor deposition mask of the downstream vapor deposition section in the vapor deposition area. The in-line deposition apparatus according to claim 1, wherein the processing substrate is transported along the transport path. The in-line deposition apparatus according to claim 1, wherein the deposition area includes a film-forming shutter that opens and closes a path from the deposition source to the deposition mask. The in-line type vapor deposition apparatus according to any one of claims 1 to 3, further comprising an alignment mechanism for aligning the vapor deposition mask and the substrate to be processed. A plurality of vapor deposition areas including vapor deposition sources and vapor deposition masks are provided along the transport path of the substrate to be processed.
A mask vapor deposition method, comprising: transporting the substrate to be processed along the transport path while temporarily stopping the substrate to be processed at a position overlapping the vapor deposition mask in the vapor deposition area. For the vapor deposition area, an upstream vapor deposition section and a downstream vapor deposition section that are adjacent to each other are provided,
The deposition source is provided as a common deposition source between the upstream deposition unit and the downstream deposition unit, and the deposition mask having the same mask pattern is provided as the upstream deposition unit and the downstream side. It is provided in each of the vapor deposition sections,
In the vapor deposition area, the substrate to be processed is suspended while temporarily stopping the substrate to be processed at a position overlapping the vapor deposition mask of the upstream vapor deposition section and a position overlapping the vapor deposition mask of the downstream vapor deposition section. The mask vapor deposition method according to claim 5, wherein the mask vapor deposition method is carried along. It is a manufacturing method of the organic electroluminescent apparatus using the mask vapor deposition method of Claim 5 or 6,
A manufacturing method of an organic electroluminescence device, wherein a thin film constituting an organic electroluminescence element is formed on the substrate to be processed in at least one of the plurality of vapor deposition areas.

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