JP2008231446A - In-line type vapor deposition apparatus and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To easily and reliably adjust only the thickness of a thin film to be deposited in a specified vapor deposition area in an in-line type vapor deposition apparatus for successively performing the vapor deposition in a plurality of vapor deposition areas on a substrate to be processed, and a film deposition method. <P>SOLUTION: When performing the film deposition in the in-line type vapor deposition apparatus 100, when the thickness of a thin film deposited on a substrate 20 to be processed in vapor deposition areas 51-53 is unbalanced, the width of a slit-like opening 14 of shutters 11, 12, 13 for controlling the vapor flow supply is adjusted without changing the conveying speed of the substrate 20 and the heating temperature of a vapor deposition material in a crucible 45. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to an in-line type vapor deposition apparatus that sequentially performs vapor deposition on a substrate to be processed in a plurality of vapor deposition areas, and a film forming method.

  In manufacturing various semiconductor devices and electro-optical devices, a thin film may be formed on a substrate to be processed using a vapor deposition method such as vacuum vapor deposition or sputter vapor deposition. For example, when manufacturing an organic electroluminescence device, each layer (hole injection transport layer, light emitting layer, electron injection) that forms an organic electroluminescence element by depositing a low molecular material or metal on a substrate to be processed by vacuum deposition. Transport layer, cathode, etc.).

  In performing such film formation, a plurality of vapor deposition areas are arranged along the conveyance path of the substrate to be processed, and the vapor flow of the film formation material supplied from the vapor deposition source in each of the plurality of vapor deposition areas is processed substrate. An in-line type vapor deposition apparatus that supplies the liquid crystal has been proposed (see, for example, Patent Document 1).

In such an in-line type vapor deposition apparatus, for example, as shown in FIGS. 5A and 5B, a plurality of vapor deposition areas 51 </ b> X to 53 </ b> X are straight along the transport direction (indicated by arrow L) of the substrate 20 to be processed. The vapor deposition sources 41X to 43X are disposed in each of the plurality of vapor deposition areas 51X to 53X. Accordingly, when the substrate 20 to be processed is transported at a constant speed, a thin film having a predetermined thickness is formed on the substrate 20 to be processed in each of the plurality of vapor deposition areas 51X to 53X. Therefore, if the type of vapor deposition material loaded in the vapor deposition sources 41X to 43X is changed, a plurality of types of thin films are laminated on the substrate 20 to be processed with a predetermined film thickness. Here, the film thickness of each thin film formed on the substrate to be processed 20 in the plurality of vapor deposition areas 51X to 53X is conventionally adjusted by adjusting the heating temperature of the vapor deposition material in the vapor deposition sources 41X to 43X, and from the vapor deposition sources 41X to 43X. This is done by controlling the amount of vapor flow of the vapor deposition material toward the substrate 20 to be processed.
JP 2005-285576 A

  However, in the in-line type vapor deposition apparatus 100X shown in FIGS. 5A and 5B, vapor deposition occurs when it is necessary to finely adjust the film thickness balance of each thin film formed between the plurality of vapor deposition areas 51X to 53X. In the method of adjusting the heating temperature of the vapor deposition material at the sources 41X to 43X, there is a problem that the adjustment takes a long time. For example, among the vapor deposition areas 51X to 53X, the thin film formed on the target substrate 20 in the vapor deposition area 52X is thin, whereas the thin film formed on the target substrate 20 in the other vapor deposition areas 51X and 53X. If the transport speed of the substrate to be processed 20 is slowed down, the film thickness of the thin film formed on the substrate to be processed 20 in the vapor deposition area 52X becomes appropriate, but in the other vapor deposition areas 51X and 53X. The thin film formed on the substrate 20 is too thick. Accordingly, a method of increasing the heating temperature of the vapor deposition material at the vapor deposition source 42X without changing the transport speed of the substrate to be processed 20 must be adopted. However, if the heating temperature is changed, the time until the steady state is reached. Take it. Further, even if the heating temperature is adjusted, the film thickness of the thin film formed in the vapor deposition area 52X may not be appropriate. In this case, it is necessary to readjust the heating temperature of the vapor deposition material in the vapor deposition source 42X again. . Furthermore, even if the heating temperature at the vapor deposition source 42X is increased, depending on the type of the vapor deposition material, there is a further problem that the material is altered when the heating temperature is increased.

  In view of the above problems, an object of the present invention is to form a film in a specific vapor deposition area in an in-line vapor deposition apparatus and a film deposition method for sequentially performing vapor deposition on a substrate to be processed in a plurality of vapor deposition areas. An object of the present invention is to provide a configuration capable of easily and reliably adjusting only the thickness of a thin film.

  In order to solve the above-described problems, the present invention includes a substrate transfer means for continuously transferring a substrate to be processed, and a plurality of vapor deposition areas arranged along a transfer path of the substrate to be processed. In each of the vapor deposition areas, an in-line vapor deposition apparatus in which a vapor deposition source that supplies a vapor flow of a film forming material toward the substrate to be moved is disposed, and at least one of the plurality of vapor deposition areas is provided. Is characterized in that a vapor flow supply amount control shutter is disposed between the substrate to be processed and the vapor deposition source to control the vapor flow supply amount from the vapor deposition source to the substrate to be processed. To do.

  In the present invention, in the film forming method of sequentially supplying a vapor flow of a film forming material supplied from a vapor deposition source to each of the plurality of vapor deposition areas arranged along the transport direction of the substrate to be processed, In at least one of the plurality of vapor deposition areas, a vapor flow supply amount control shutter for controlling the vapor flow supply amount from the vapor deposition source to the substrate to be processed is disposed between the substrate to be processed and the vapor deposition source. The vapor flow supply amount control shutter adjusts the film thickness of the thin film formed on the substrate to be processed in the vapor deposition area where the vapor flow supply amount control shutter is disposed.

  In the present invention, at least one of the plurality of vapor deposition areas is interposed between the substrate to be processed and the vapor deposition source, and controls a vapor flow supply amount control shutter that controls the vapor flow supply amount from the vapor deposition source to the substrate to be processed. Therefore, in the vapor deposition area where the vapor flow supply amount control shutter is arranged, the film thickness of the thin film formed on the substrate to be processed can be adjusted by the vapor flow supply amount control shutter. Therefore, in an in-line type vapor deposition apparatus in which the substrate to be processed passes continuously through a plurality of vapor deposition areas at a constant speed, when the film thickness of the thin film formed on the substrate to be treated in a specific vapor deposition area is not appropriate, Without changing the film thickness of the thin film formed on the substrate to be processed in the other vapor deposition area, only the film thickness of the thin film formed on the substrate to be processed in the specific vapor deposition area can be finely adjusted. In addition, if the configuration for controlling the vapor flow supply amount from the vapor deposition source to the substrate to be processed by the vapor flow supply amount control shutter is compared with the configuration for adjusting the heating temperature of the vapor deposition material at the vapor deposition source, Adjustment is easy and reliable.

  In the present invention, it is preferable that the vapor flow supply amount control shutter is disposed in each of the plurality of vapor deposition areas. If comprised in this way, even when the film thickness balance of the thin film formed in a to-be-processed substrate has shifted | deviated slightly between several vapor deposition areas, this shift | offset | difference can be finely adjusted easily and reliably.

  In the present invention, the steam flow supply amount control shutter includes a slit-shaped opening extending in a direction intersecting with a transport direction of the substrate to be processed in an in-plane direction of the substrate to be processed, and the slit-shaped opening It is preferable to control the steam flow supply amount by adjusting the opening width of the part. With this configuration, in the in-plane direction of the substrate to be processed, the slit-like opening extends with a predetermined dimension in the direction intersecting the substrate transfer direction, and the slit is formed in the substrate transfer direction of the substrate to be processed. The opening width of the shaped opening can be adjusted. Therefore, even when the steam flow supply amount is controlled by adjusting the opening width of the slit-shaped opening, the balance of the steam flow supply amount in the direction intersecting the transport direction of the substrate to be processed in the in-plane direction of the substrate to be processed. Can be avoided.

  In the present invention, the steam flow supply amount control shutter is displaced in the transport direction of the substrate to be processed between the substrate to be processed and the vapor deposition source, and adjusts the opening width of the slit-shaped opening. It is preferable to provide. If comprised in this way, the opening width of a slit-shaped opening part can be easily adjusted with a simple structure.

  In the present invention, the shutter plate is displaced in the transport direction of the target substrate by rotating around an axis extending in a direction intersecting the transport direction of the target substrate in the in-plane direction of the target substrate. It is preferable to do. With this configuration, the space necessary for displacing the shutter plate in the transport direction of the substrate to be processed may be narrow, so that it is not necessary to expand the vapor deposition area even when the shutter plate is disposed in the vapor deposition area.

  In the present invention, the steam flow supply amount control shutter includes, as the shutter plate, a pair of shutter plates that are displaced in a direction in which they are close to each other and a direction in which they are separated through the slit-shaped opening. preferable. With this configuration, unlike the case where a single shutter plate is used, it is possible to realize a state in which the shutter plate is largely retracted from between the substrate to be processed and the vapor deposition source.

  The in-line vapor deposition apparatus and the film forming method to which the present invention is applied are particularly effective when used for manufacturing an organic electroluminescence apparatus or the like. When vapor deposition is performed on a substrate to be processed using a low molecular organic EL material as a vapor deposition material, the organic EL material, which is an organic substance, has a lower thermal conductivity than an inorganic substance. Therefore, the vapor deposition rate can be adjusted by adjusting the temperature of the vapor deposition material. There are many difficulties with fine adjustment. However, according to the present invention, since the film thickness is controlled by the steam flow supply amount control shutter, fine adjustment of the film thickness can be easily performed even when an organic substance is used as the vapor deposition material. Therefore, in this invention, it is preferable that the vapor deposition area for vapor-depositing an organic material is contained in the vapor deposition area in which the said vapor flow supply amount control shutter is arrange | positioned among these vapor deposition areas.

  With reference to the drawings, an inline vapor deposition apparatus and a film forming method to which the present invention is applied will be described. In addition, in the following embodiment, the case where an organic electroluminescent apparatus (organic EL apparatus) is manufactured using the in-line type vapor deposition apparatus of this invention is illustrated.

(Configuration example of organic EL device)
FIG. 1 is a cross-sectional view of an essential part of an organic EL device to which the present invention is applied. An organic EL device 1 shown in FIG. 1 is used as a line head used in a display device or an electrophotographic printer, and includes a light emitting element group 3A formed by arranging a plurality of organic EL elements 3. I have. The organic EL element 3 includes, for example, a pixel electrode 4 made of an ITO (Indium Tin Oxide) film functioning as an anode, a hole injection / transport layer 5 for injecting / transporting holes from the pixel electrode 4, and an organic EL material. A light emitting layer 6 made of the above, an electron injecting and transporting layer 7 for injecting / transporting electrons, and a cathode 8 made of aluminum or an aluminum alloy. On the cathode 8 side, a sealing layer and a sealing member (not shown) for preventing the organic EL element 3 from being deteriorated by moisture or oxygen are disposed. On the element substrate 2, a circuit portion 2 b including a driving transistor 2 a electrically connected to the pixel electrode 4 is formed on the lower layer side of the organic EL element 3.

  When the organic EL device 1 is a bottom emission method, light emitted from the light emitting layer 6 is emitted from the pixel electrode 4 side, so that the base of the element substrate 2 is glass, quartz, resin (plastic, plastic film) A transparent substrate such as is used. At this time, if the cathode 8 is formed of a light reflecting film, the light emitted from the light emitting layer 6 can be reflected by the cathode 8 and emitted from the transparent substrate side. On the other hand, when the organic EL device 1 is a top emission method, the light emitted from the light emitting layer 6 is emitted from the cathode 8 side, and therefore the base of the element substrate 2 does not need to be transparent. However, even when the organic EL device 1 is a top emission type, a light is emitted from the light emitting layer 6 by disposing a reflective layer (not shown) on the surface opposite to the light emitting side with respect to the element substrate 2. Is emitted from the cathode 8 side, it is necessary to use a transparent substrate as the base of the element substrate 2. When the organic EL device 1 is a top emission system, a reflective layer is formed between the base of the element substrate 2 and the light emitting layer 6, and light emitted from the light emitting layer 6 is emitted from the cathode 8 side. In some cases, the base of the element substrate 2 does not need to be transparent.

  In forming the element substrate 2, in addition to the method of performing the following steps on a single-size substrate, the following steps are performed on a large substrate on which a large number of element substrates 2 can be obtained, and then the single-size element substrate 2 is formed. A method of cutting is employed, but in the following description, the substrate 20 is referred to regardless of size.

  In order to manufacture the organic EL device 1, each layer is formed on the substrate to be processed 20 by using a semiconductor process such as a film forming process or a patterning process using a resist mask. However, since the hole injecting and transporting layer 5, the light emitting layer 6, the electron injecting and transporting layer 7 and the like are made of a low-molecular organic material that easily deteriorates due to moisture or oxygen, the hole injecting and transporting layer 5, the light emitting layer 6, and the electron injecting and transporting layer. When the layer 7 is formed, and further, when the cathode 8 is formed in the upper layer of the electron injection / transport layer 7, a patterning process using a resist mask is performed, and when the resist mask is removed with an etching solution or oxygen plasma. In addition, the hole injecting and transporting layer 5, the light emitting layer 6, and the electron injecting and transporting layer 7 are deteriorated by moisture and oxygen. Therefore, in this embodiment, when the hole injection transport layer 5, the light emitting layer 6, and the electron injection transport layer 7 are formed, and further when the cathode 8 is formed, mask vapor deposition is performed using a vapor deposition apparatus described in detail below. The patterning process using a resist mask is not performed.

(Overall configuration of in-line type vapor deposition equipment)
2A and 2B are a plan view and a cross-sectional view, respectively, schematically showing the configuration of an in-line type vapor deposition apparatus to which the present invention is applied. In the following, the transport direction of the substrate 20 is indicated by an arrow L.

  As shown in FIGS. 2A and 2B, in the in-line type vapor deposition apparatus 100 of the present embodiment, a plurality of rollers 18 along the transport direction of the substrate 20 as substrate transport means for transporting the substrate 20 to be processed. (Not shown in FIG. 2B) are linearly arranged, and the rollers 18 are arranged in two rows in a direction orthogonal to the transport direction of the substrate 20 in the in-plane direction of the substrate 20 to be processed. ing. Moreover, in the in-line type vapor deposition apparatus 100, a plurality of vapor deposition areas are arranged along the transport path of the substrate 20 to be processed defined by the plurality of rollers 18, and in FIGS. 2 (a) and 2 (b), An example in which three vapor deposition areas 51 to 53 are arranged is shown. Each of the vapor deposition areas 51 to 53 includes chambers 61 to 63 having a rectangular planar shape. Among these chambers 61 to 63, the most upstream chamber 61 is formed with an introduction port 101 for carrying in the substrate 20 to be processed, and the substrate 20 is carried out into the most downstream chamber 63. A lead-out port 102 is formed. A substrate passage 103 is formed between the chambers 61 and 62 and between the chambers 62 and 63, respectively. Note that shutters (not shown) for preventing the atmosphere in the chambers 61 to 63 from being contaminated may be disposed at the inlet 101, the substrate passage 103, and the outlet 102. Each chamber 61 to 63 is connected to a vacuuming device (not shown) capable of adjusting the degree of vacuum inside each chamber.

  In each of the chambers 61 to 63, vapor deposition sources 41 to 43 are disposed below the transport path of the substrate 20 to be processed defined by the plurality of rollers 18. In this embodiment, two vapor deposition sources 41 to 43 are arranged in each chamber 61 to 63 so as to be adjacent to each other in a direction orthogonal to the transport direction of the substrate 20 to be processed. The vapor deposition sources 41 to 43 each include a crucible 45 loaded with a vapor deposition material and a heating device 46 for heating the vapor deposition material in the crucible 45. 2B, cell shutters 71 to 73 that can open and close the opening of the crucible 45 for each of the vapor deposition sources 41 to 43 (not shown in FIG. 2A). ) Is arranged.

  In the in-line type vapor deposition apparatus 100 configured as described above, in order to perform mask vapor deposition on the substrate 20 to be processed, it is necessary to transport the mask member 30 with the mask member 30 superimposed on the lower surface of the substrate 20 to be processed. Therefore, in this embodiment, the substrate 20 to be processed and the mask member 30 are held by the rectangular frame-shaped transfer tray 19 in an overlapping state, and are transferred in this state. As described below with reference to FIGS. 3A and 3B, the mask member 30 includes a plurality of mask openings 310 corresponding to the vapor deposition pattern formed on the substrate 20 to be processed.

(Configuration of evaporation mask 31)
3A and 3B are explanatory views of a vapor deposition mask. The mask member 30 shown in FIGS. 2A and 2B has the configuration shown in FIGS. 3A and 3B, for example. Of the mask members 30A and 30B shown in FIGS. 3A and 3B, the mask member 30A shown in FIG. 3A is a rectangular thin plate-shaped deposition mask having a thickness of about 0.25 to 0.5 mm. 31 is attached to a rectangular frame 33. The vapor deposition mask 31 and the frame 33 are each made of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy, etc.), glass, ceramics, silicon, etc., and the vapor deposition mask 31 is preferably made of silicon. The vapor deposition mask 31 has a plurality of mask openings 310 corresponding to vapor deposition patterns formed on the substrate to be processed 20 formed in parallel and at regular intervals. The frame 33 is disposed between the support substrate 34 in which the opening region 340 having substantially the same size as the vapor deposition mask 31 is formed, and the mask opening 310 of the vapor deposition mask 31, and between the mask openings 310. A beam portion 35 to be supported, and a fixing member 36 for fixing the beam portion 35 to the support substrate 34 by applying a longitudinal tension to the beam portion 35 are provided. The beam portion 35 is disposed along the longitudinal direction of the mask opening portion 310 between the mask opening portions 310 and has a narrower width dimension than a region sandwiched between the mask opening portions 310. The beam portion 35 is made of a metal material (for example, stainless steel, invar, 42 alloy, nickel alloy), glass, ceramics, silicon, SUS430, or the like.

  The mask member 30B shown in FIG. 3B has a configuration in which a plurality of chip-shaped deposition masks 31 are attached to a support substrate 37 that forms a base substrate, and each of the plurality of deposition masks 31 is aligned. Then, it is bonded to the support substrate 37 by a method such as anodic bonding or adhesive. The support substrate 37 is provided with a plurality of opening regions 370 in parallel and at regular intervals. Each of the plurality of vapor deposition masks 31 is fixed on the support substrate 37 so as to close the opening region 370. The vapor deposition mask 31 is provided with a plurality of long-hole-shaped mask openings 310 corresponding to the vapor deposition pattern for the substrate 20 to be processed in parallel at regular intervals. The evaporation mask 31 is made of single crystal silicon having a plane orientation (100), single crystal silicon having a plane orientation (110), or the like, and the mask opening 310 is formed by a photolithography technique or an organic material such as tetramethyl aluminum oxide. It is formed by a wet etching technique using an alkaline aqueous solution such as an inorganic hydroxide such as a potassium hydroxide or potassium hydroxide or sodium hydroxide. As the support substrate 37, a transparent substrate made of alkali-free glass, borosilicate glass, soda glass, quartz, or the like is used.

(Detailed configuration of in-line type vapor deposition equipment)
2A and 2B again, in the in-line type vapor deposition apparatus 100 of the present embodiment, the substrate to be processed 20 and the vapor deposition sources 41 to 63 are disposed in the chambers 61 to 63 in each of the three vapor deposition areas 51 to 53. Vapor flow supply amount control shutters 11, 12, and 13 are disposed between the vapor deposition sources 41 to 43 to control the vapor flow supply amount to the substrate 20 to be processed.

  In this embodiment, each of the steam flow supply amount control shutters 11, 12, and 13 includes two shutter plates 15 a and 15 b that can rotate around an axis extending in a direction orthogonal to the transport direction of the substrate 20 to be processed. ing. Both of the two shutter plates 15a and 15b are displaced in directions close to each other and in directions away from each other by driving from the outside, and are held in a predetermined posture. Here, the shutter plates 15 a and 15 b are a first flat plate portion 151 extending upward from the rotation center shaft 150 and a second flat plate bent at a right angle so as to be close to each other from the upper end of the first flat plate portion 151. In the in-plane direction of the substrate 20 to be processed, the transport direction of the substrate to be processed 20 is between the tip portions of the second flat plate portions 152 of the two shutter plates 15a and 15b. A slit-like opening 14 extending in a direction perpendicular to the direction is formed. In this embodiment, the width dimension of the slit-shaped opening 14 (the dimension in which the two flat plate portions 152 of the two shutter plates 15a and 15b are separated from each other in the transport direction of the substrate 20 to be processed) It is constant in a direction orthogonal to the transport direction of the substrate to be processed 20 in the in-plane direction of the processing substrate 20. The shutter plates 15a and 15b are made of metal, ceramics, or heat-resistant resin, and in any case, are made of a material that can withstand the temperature of the steam flow.

(Operation)
4 (a) and 4 (b) show how the opening width of the slit-like opening of the steam flow supply amount control shutter is adjusted from the state shown in FIG. 2 in the in-line vapor deposition apparatus to which the present invention is applied. It is the top view and sectional view which show typically.

  2 (a) and 2 (b), in the in-line type vapor deposition apparatus 100 of the present embodiment, first, the crucible 45 is covered with the cell shutters 71 to 73 in the chambers 61 to 63, respectively. After the vapor deposition material in 45 is heated to a predetermined temperature, the cell shutters 71 to 73 are moved to the open position, and a vapor flow is discharged from the vapor deposition sources 41 to 43 into the chambers 61 to 63. When the transport tray 19 holding the substrate 20 to be processed and the mask member 30 is sequentially transported to the respective vapor deposition areas 51 to 53 by the rollers 18, the vapor flow of the vapor deposition material released from the vapor deposition sources 41 to 43 is masked 30. Is supplied to the substrate to be processed 20 through the mask opening 310. Therefore, as the substrate to be processed 20 moves, the thin films formed in the plurality of vapor deposition areas 51 to 53 are stacked with a pattern corresponding to the mask opening 310.

  Here, in FIGS. 2A and 2B, the widths of the slit-like opening portions 14 of the steam flow supply amount control shutters 11, 12, and 13 are d1, d2, and d3, respectively. In this state, the film thickness of the thin film formed on the substrate to be processed 20 in each of the vapor deposition areas 51 to 53 is used to control the transport speed of the substrate 20 to be processed, the discharge speed of the steam flow from the crucible 45, and the steam flow supply amount control. It is defined by the width dimensions d1, d2, and d3 of the slit-like openings 14 of the shutters 11, 12, and 13.

  When film formation is performed in such a state, if the film thickness balance of the thin film formed on the substrate to be processed 20 is shifted in each of the vapor deposition areas 51 to 53, the result is fed back and fine adjustment is performed. . In performing this fine adjustment, in the present embodiment, the vapor flow supply is performed without changing the conveyance speed of the substrate 20 to be processed and the heating temperature of the vapor deposition material in the crucible 45 (the vapor flow discharge speed from the crucible 45). Only the width dimension of the slit-shaped opening 14 of the amount control shutters 11, 12, 13 is adjusted.

  For example, among the vapor deposition areas 51 to 53, the film thickness of the thin film formed on the substrate to be processed 20 in the vapor deposition area 51 is appropriate, while the film thickness of the thin film formed on the substrate to be processed 20 in the vapor deposition area 52 is thick. If the film thickness of the thin film formed on the substrate to be processed 20 is too thin in the vapor deposition area 53, the following fine adjustment is performed to obtain the state shown in FIGS. That is, the width dimension of the slit-like opening 14 of the steam flow supply amount control shutter 11 remains d1 and is not changed. On the other hand, with respect to the steam flow supply amount control shutter 12, the shutter plates 15a and 15b are displaced in directions close to each other, and the width dimension of the slit-shaped opening 14 of the steam flow supply amount control shutter 12 is changed from d2. Narrow to d4. On the other hand, for the steam flow supply amount control shutter 13, the shutter plates 15a and 15b are displaced away from each other, and the width dimension of the slit-like opening 14 of the steam flow supply amount control shutter 13 is increased from d3 to d5. . As a result, the film formation speed in the vapor deposition area 51 does not change, whereas the film formation speed in the vapor deposition area 52 decreases and the film formation speed in the vapor deposition area 53 increases. Therefore, since the film formation speed for the substrate to be processed 20 in each vapor deposition area 51 to 53 is optimized, the film thickness balance of the thin film formed on the substrate to be processed 20 in each vapor deposition area 51 to 53 is adjusted.

(Main effects of this form)
As described above, in the in-line type vapor deposition apparatus 100 of this embodiment, each of the vapor deposition areas 51 to 53 is interposed between the substrate to be processed 20 and the vapor deposition sources 41 to 43 from the vapor deposition sources 41 to 43. Vapor flow supply amount control shutters 11 to 13 for controlling the vapor flow supply amount to the processing substrate 20 are arranged. For this reason, in the vapor deposition areas 51-53, the width dimension of the slit-shaped opening 14 of the steam flow supply amount control shutters 11-13 is changed from the conditions shown in FIGS. By adjusting to the conditions shown in a) and (b), the thickness of the thin film formed on the substrate to be processed 20 can be adjusted. Therefore, in the in-line type vapor deposition apparatus 100 in which the substrate 20 to be processed passes through the plurality of vapor deposition areas 51 to 53 at a constant speed, the film thickness of the thin film formed on the substrate 20 to be processed in the specific vapor deposition area is not appropriate. In this case, only the film thickness of the thin film formed on the target substrate 20 in the specific vapor deposition area is finely adjusted without changing the film thickness of the thin film formed on the target substrate 20 in the other vapor deposition area. Can do.

  Further, if the vapor flow supply amount control shutter 13 controls the vapor flow supply amount from the vapor deposition sources 41 to 43 to the substrate 20 to be processed, the heating temperature of the vapor deposition material at the vapor deposition sources 41 to 43 is adjusted. Compared with the configuration to be adjusted, adjustment is easy and reliable. Particularly in the case of vapor deposition of an organic material, since thermal conductivity is low, it is often difficult to finely adjust the vapor deposition rate by adjusting the temperature of the vapor deposition material. However, according to this embodiment, since the film thickness is controlled by the steam flow supply amount control shutters 11 to 13, fine adjustment of the film thickness can be easily performed even when an organic substance is used as the vapor deposition material.

  Further, in this embodiment, since the vapor flow supply amount control shutters 11 to 13 are disposed in the plurality of vapor deposition areas 51 to 53, the thin film formed on the substrate to be processed 20 between the vapor deposition areas 51 to 53. Even if the film thickness balance is slightly deviated, the deviation can be easily and reliably finely adjusted.

  Furthermore, the steam flow supply amount control shutters 11 to 13 include a slit-shaped opening 14 extending in a direction intersecting the transport direction of the substrate to be processed 20 in the in-plane direction of the substrate to be processed 20. The opening width of the portion 14 is adjusted. For this reason, in the in-plane direction of the substrate 20 to be processed, the slit-shaped opening 14 is slit in the transfer direction of the substrate 20 to be processed while the slit-shaped opening 14 extends with a uniform width in the direction intersecting the transfer direction of the substrate 20 to be processed. The opening width of the opening 14 can be adjusted. Therefore, even when the vapor flow supply amount is controlled by adjusting the opening width of the slit-shaped opening 14, the vapor flow supply amount in the direction intersecting the transport direction of the substrate to be processed 20 in the in-plane direction of the substrate to be processed 20. It is possible to avoid a loss of balance.

  Further, the steam flow supply amount control shutters 11 to 13 displace the shutter plates 15a and 15b in the transport direction of the substrate to be processed 20 to adjust the opening width of the slit-shaped opening 14, and thus have a simple configuration and a slit shape. The opening width of the opening 14 can be easily adjusted.

  In addition, since the shutter plates 15a and 15b rotate around an axis extending in a direction intersecting the transport direction of the substrate 20 to be processed in the in-plane direction of the substrate 20 to be processed, the shutter plates 15a and 15b are moved to the substrate to be processed. The space required for displacement in the 20 conveyance direction may be narrow. Therefore, even when the shutter plates 15a and 15b are arranged in the vapor deposition areas 51 to 53, it is not necessary to expand the vapor deposition areas 51 to 53.

  Furthermore, each of the steam flow supply amount control shutters 11 to 13 includes a pair of shutter plates 15a and 15b that are displaced in a direction in which they are close to each other and a direction in which they are separated from each other. In contrast, for example, the shutter plates 15a and 15b are largely retracted from between the substrate to be processed 20 and the evaporation source 43 as in the steam flow supply amount control shutter 13 shown in FIGS. 4 (a) and 4 (b). A state can be realized.

[Other embodiments]
In the above embodiment, the two shutter plates 15a and 15b are displaced. However, a configuration in which one shutter plate is fixed and only the other shutter plate is displaced may be employed. In addition, when there is a space in the vapor deposition areas 51 to 53, the shutter plates 15a and 15b may be configured to slide in the transport direction of the substrate 20 to be processed instead of the rotating configuration. .

  In the said form, although the slit-shaped opening part 14 was equal width and extended in the direction orthogonal to the conveyance direction of the to-be-processed substrate 20 in the in-plane direction of the to-be-processed substrate 20, for example, position with the vapor deposition sources 41-43 When the film thickness variation occurs in a direction perpendicular to the transport direction of the substrate to be processed 20 in the in-plane direction of the substrate to be processed 20 depending on the relationship, the in-plane direction of the substrate to be processed 20 is eliminated so as to eliminate the variation. Alternatively, a configuration in which the slit-like opening 14 is changed in a direction orthogonal to the conveyance direction of the substrate 20 to be processed may be employed. In the above embodiment, the slit-shaped opening 14 extends in the in-plane direction of the substrate to be processed 20 in a direction orthogonal to the transport direction of the substrate to be processed 20. You may employ | adopt the structure extended in the diagonal direction (direction which cross | intersects) with respect to the conveyance direction of the to-be-processed substrate 20 in an in-plane direction.

  In the above-described embodiment, different types of thin films are formed in the plurality of vapor deposition areas 51 to 53. However, in order to adjust the film thickness balance in the plurality of vapor deposition areas 51 to 53 that form the same type of thin film. The invention may be applied. For example, when forming a thin film on a large substrate, in-plane film thickness variations are likely to occur, so by forming the same type of thin film in multiple deposition areas with different deposition source positions, In the case of eliminating the variation, the present invention may be applied to adjust the film thickness balance in a plurality of vapor deposition areas.

  In the above embodiment, the present invention is applied when mask vapor deposition is performed. However, the present invention may be applied not only to mask vapor deposition but also to vapor deposition on the entire surface of the substrate to be processed. In the above embodiment, the present invention is applied to vacuum deposition. However, the present invention may be applied to sputtering deposition.

It is principal part sectional drawing of the organic electroluminescent apparatus with which this invention is applied. (A), (b) is respectively the top view and sectional drawing which show typically the structure of the in-line-type vapor deposition apparatus to which this invention is applied. (A), (b) is explanatory drawing of the mask for vapor deposition used with the vapor deposition apparatus shown in FIG. 2, respectively. (A), (b) is a schematic view showing how the opening width of the slit-like opening of the steam flow supply amount control shutter is adjusted from the state shown in FIG. 2 in the in-line type vapor deposition apparatus to which the present invention is applied. It is the top view and sectional drawing which are shown in FIG. (A), (b) is respectively the top view and sectional drawing which show typically the structure of the conventional in-line type vapor deposition apparatus.

Explanation of symbols

1 .... Organic EL device, 3 .... Organic EL element, 11, 12, 13, ... Vapor flow control shutter, 14 .... Slit aperture, 15a, 15b ... Shutter plate, 18 .... Roller ( Conveying means) 41-43..Vapor deposition source, 51-53..Vapor deposition area, 61-63..Chamber, 100..In-line type vapor deposition apparatus.

Claims (9)

It has a substrate transport means for continuously transporting the substrate to be processed, and a plurality of vapor deposition areas arranged along the transport path of the substrate to be processed, and moves to each of the plurality of vapor deposition areas. In an in-line type vapor deposition apparatus in which a vapor deposition source for supplying a vapor flow of a film forming material toward the substrate to be processed is arranged,
At least one of the plurality of vapor deposition areas is interposed between the substrate to be processed and the vapor deposition source for controlling the vapor flow supply amount from the vapor deposition source to the substrate to be processed. An in-line type vapor deposition apparatus, wherein a shutter is disposed.   The in-line type vapor deposition apparatus according to claim 1, wherein the vapor flow supply amount control shutter is disposed in each of the plurality of vapor deposition areas.   The steam flow supply amount control shutter includes a slit-shaped opening extending in a direction intersecting with the transport direction of the substrate to be processed in an in-plane direction of the substrate to be processed, and an opening width of the slit-shaped opening The in-line type vapor deposition apparatus according to claim 1, wherein the supply amount of the vapor flow is controlled by adjusting the flow rate.   The steam flow supply amount control shutter includes a shutter plate that adjusts an opening width of the slit-shaped opening by being displaced in a transport direction of the substrate to be processed between the substrate to be processed and the vapor deposition source. The in-line type vapor deposition apparatus according to any one of claims 1 to 3, wherein:   The shutter plate is displaced in the transport direction of the target substrate by rotating around an axis extending in a direction intersecting the transport direction of the target substrate in an in-plane direction of the target substrate. The in-line type vapor deposition apparatus according to claim 4.   The steam flow supply amount control shutter includes, as the shutter plate, a pair of shutter plates that are displaced in a direction toward and away from each other via the slit-shaped opening. Item 6. The in-line deposition apparatus according to Item 4 or 5.   The vapor deposition area for depositing an organic material is included in the vapor deposition area where the vapor flow supply amount control shutter is disposed among the plurality of vapor deposition areas. The in-line type vapor deposition apparatus according to any one of the above. In a film forming method for sequentially supplying a vapor flow of a film forming material supplied from a vapor deposition source in each of a plurality of vapor deposition areas arranged along a conveyance path of a substrate to be processed, to the substrate to be processed.
In at least one of the plurality of vapor deposition areas, a vapor flow supply amount control shutter for controlling a vapor flow supply amount from the vapor deposition source to the substrate to be processed is disposed between the substrate to be processed and the vapor deposition source. And
A film forming method comprising: adjusting a film thickness of a thin film formed on the substrate to be processed in a vapor deposition area where the steam flow supply amount control shutter is disposed by the steam flow supply amount control shutter.   The deposition area for depositing an organic material is included in the deposition area where the vapor flow supply amount control shutter is disposed among the plurality of deposition areas. Film forming method.

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