JP2010150406A - Method for producing low electrostatically charging fluororesin film and conductive material-free low electrically charging fluororesin film - Google Patents
Method for producing low electrostatically charging fluororesin film and conductive material-free low electrically charging fluororesin film Download PDFInfo
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- JP2010150406A JP2010150406A JP2008330576A JP2008330576A JP2010150406A JP 2010150406 A JP2010150406 A JP 2010150406A JP 2008330576 A JP2008330576 A JP 2008330576A JP 2008330576 A JP2008330576 A JP 2008330576A JP 2010150406 A JP2010150406 A JP 2010150406A
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- fluororesin film
- conductive material
- low
- free
- voltage
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 25
- 239000006185 dispersion Substances 0.000 claims abstract description 7
- 239000000725 suspension Substances 0.000 claims abstract description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 3
- 239000011737 fluorine Substances 0.000 claims abstract description 3
- 239000000243 solution Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 239000004094 surface-active agent Substances 0.000 abstract description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 14
- 238000004381 surface treatment Methods 0.000 description 12
- 238000001878 scanning electron micrograph Methods 0.000 description 11
- -1 polytetrafluoroethylene Polymers 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 150000003961 organosilicon compounds Chemical class 0.000 description 6
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 229920002313 fluoropolymer Polymers 0.000 description 4
- 239000004811 fluoropolymer Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 3
- UQSQSQZYBQSBJZ-UHFFFAOYSA-N fluorosulfonic acid Chemical compound OS(F)(=O)=O UQSQSQZYBQSBJZ-UHFFFAOYSA-N 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- OSWPMRLSEDHDFF-UHFFFAOYSA-N methyl salicylate Chemical compound COC(=O)C1=CC=CC=C1O OSWPMRLSEDHDFF-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920013653 perfluoroalkoxyethylene Polymers 0.000 description 2
- ZQBAKBUEJOMQEX-UHFFFAOYSA-N phenyl salicylate Chemical compound OC1=CC=CC=C1C(=O)OC1=CC=CC=C1 ZQBAKBUEJOMQEX-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- WVYADZUPLLSGPU-UHFFFAOYSA-N salsalate Chemical compound OC(=O)C1=CC=CC=C1OC(=O)C1=CC=CC=C1O WVYADZUPLLSGPU-UHFFFAOYSA-N 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 229920001897 terpolymer Polymers 0.000 description 2
- QXZGXRIXJAVMTI-UHFFFAOYSA-N tribenzylsilicon Chemical compound C=1C=CC=CC=1C[Si](CC=1C=CC=CC=1)CC1=CC=CC=C1 QXZGXRIXJAVMTI-UHFFFAOYSA-N 0.000 description 2
- POLSVAXEEHDBMJ-UHFFFAOYSA-N (2-hydroxy-4-octadecoxyphenyl)-phenylmethanone Chemical compound OC1=CC(OCCCCCCCCCCCCCCCCCC)=CC=C1C(=O)C1=CC=CC=C1 POLSVAXEEHDBMJ-UHFFFAOYSA-N 0.000 description 1
- PLYYQWWELYJSEB-DEOSSOPVSA-N (2s)-2-(2,3-dihydro-1h-inden-2-yl)-2-(9h-fluoren-9-ylmethoxycarbonylamino)acetic acid Chemical compound C1C2=CC=CC=C2CC1[C@@H](C(=O)O)NC(=O)OCC1C2=CC=CC=C2C2=CC=CC=C21 PLYYQWWELYJSEB-DEOSSOPVSA-N 0.000 description 1
- PYTMYNQWASSKJH-UHFFFAOYSA-N (4-chlorophenyl)-(2-hydroxyphenyl)methanone Chemical compound OC1=CC=CC=C1C(=O)C1=CC=C(Cl)C=C1 PYTMYNQWASSKJH-UHFFFAOYSA-N 0.000 description 1
- ARVUDIQYNJVQIW-UHFFFAOYSA-N (4-dodecoxy-2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC(OCCCCCCCCCCCC)=CC=C1C(=O)C1=CC=CC=C1 ARVUDIQYNJVQIW-UHFFFAOYSA-N 0.000 description 1
- VNFXPOAMRORRJJ-UHFFFAOYSA-N (4-octylphenyl) 2-hydroxybenzoate Chemical compound C1=CC(CCCCCCCC)=CC=C1OC(=O)C1=CC=CC=C1O VNFXPOAMRORRJJ-UHFFFAOYSA-N 0.000 description 1
- ADTHJEKIUIOLBX-UHFFFAOYSA-N 1,1,3,4,4,5,5,6,6,6-decafluoro-3-(trifluoromethyl)hex-1-ene Chemical compound FC(C(F)(F)F)(C(C(C(F)(F)F)(C=C(F)F)F)(F)F)F ADTHJEKIUIOLBX-UHFFFAOYSA-N 0.000 description 1
- NXXNVJDXUHMAHU-UHFFFAOYSA-N 1-anthracen-9-ylethanone Chemical compound C1=CC=C2C(C(=O)C)=C(C=CC=C3)C3=CC2=C1 NXXNVJDXUHMAHU-UHFFFAOYSA-N 0.000 description 1
- ZXDDPOHVAMWLBH-UHFFFAOYSA-N 2,4-Dihydroxybenzophenone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 ZXDDPOHVAMWLBH-UHFFFAOYSA-N 0.000 description 1
- FTPINZCFYZIPPV-UHFFFAOYSA-N 2-(2H-benzotriazol-4-yl)-6-tert-butyl-4-methylphenol Chemical compound Cc1cc(c(O)c(c1)C(C)(C)C)-c1cccc2[nH]nnc12 FTPINZCFYZIPPV-UHFFFAOYSA-N 0.000 description 1
- LHPPDQUVECZQSW-UHFFFAOYSA-N 2-(benzotriazol-2-yl)-4,6-ditert-butylphenol Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC(N2N=C3C=CC=CC3=N2)=C1O LHPPDQUVECZQSW-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- DBOSBRHMHBENLP-UHFFFAOYSA-N 4-tert-Butylphenyl Salicylate Chemical compound C1=CC(C(C)(C)C)=CC=C1OC(=O)C1=CC=CC=C1O DBOSBRHMHBENLP-UHFFFAOYSA-N 0.000 description 1
- POPBYCBXVLHSKO-UHFFFAOYSA-N 9,10-dioxoanthracene-1-carboxylic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(=O)O POPBYCBXVLHSKO-UHFFFAOYSA-N 0.000 description 1
- CPGPAVAKSZHMBP-UHFFFAOYSA-N 9-methylanthracene Chemical compound C1=CC=C2C(C)=C(C=CC=C3)C3=CC2=C1 CPGPAVAKSZHMBP-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 229920001780 ECTFE Polymers 0.000 description 1
- OVFJGHSGYBVLIJ-UHFFFAOYSA-N OC1=C(C=C(C=C1)OC)C1=CC=CC=2NN=NC21 Chemical compound OC1=C(C=C(C=C1)OC)C1=CC=CC=2NN=NC21 OVFJGHSGYBVLIJ-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229920006172 Tetrafluoroethylene propylene Polymers 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical group 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- JCJNNHDZTLRSGN-UHFFFAOYSA-N anthracen-9-ylmethanol Chemical compound C1=CC=C2C(CO)=C(C=CC=C3)C3=CC2=C1 JCJNNHDZTLRSGN-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000003934 aromatic aldehydes Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- SODJJEXAWOSSON-UHFFFAOYSA-N bis(2-hydroxy-4-methoxyphenyl)methanone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=C(OC)C=C1O SODJJEXAWOSSON-UHFFFAOYSA-N 0.000 description 1
- 239000002717 carbon nanostructure Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- OVOIHGSHJGMSMZ-UHFFFAOYSA-N ethenyl(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C=C)C1=CC=CC=C1 OVOIHGSHJGMSMZ-UHFFFAOYSA-N 0.000 description 1
- IAJNXBNRYMEYAZ-UHFFFAOYSA-N ethyl 2-cyano-3,3-diphenylprop-2-enoate Chemical compound C=1C=CC=CC=1C(=C(C#N)C(=O)OCC)C1=CC=CC=C1 IAJNXBNRYMEYAZ-UHFFFAOYSA-N 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- WADKYPSVXRWORK-UHFFFAOYSA-N ethynyl(triphenyl)silane Chemical group C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(C#C)C1=CC=CC=C1 WADKYPSVXRWORK-UHFFFAOYSA-N 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical group FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229960001047 methyl salicylate Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KVBGVZZKJNLNJU-UHFFFAOYSA-N naphthalene-2-sulfonic acid Chemical compound C1=CC=CC2=CC(S(=O)(=O)O)=CC=C21 KVBGVZZKJNLNJU-UHFFFAOYSA-N 0.000 description 1
- FMJSMJQBSVNSBF-UHFFFAOYSA-N octocrylene Chemical compound C=1C=CC=CC=1C(=C(C#N)C(=O)OCC(CC)CCCC)C1=CC=CC=C1 FMJSMJQBSVNSBF-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- DXGLGDHPHMLXJC-UHFFFAOYSA-N oxybenzone Chemical compound OC1=CC(OC)=CC=C1C(=O)C1=CC=CC=C1 DXGLGDHPHMLXJC-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 229960000969 phenyl salicylate Drugs 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- GDESWOTWNNGOMW-UHFFFAOYSA-N resorcinol monobenzoate Chemical compound OC1=CC=CC(OC(=O)C=2C=CC=CC=2)=C1 GDESWOTWNNGOMW-UHFFFAOYSA-N 0.000 description 1
- YGSDEFSMJLZEOE-UHFFFAOYSA-M salicylate Chemical compound OC1=CC=CC=C1C([O-])=O YGSDEFSMJLZEOE-UHFFFAOYSA-M 0.000 description 1
- 229960001860 salicylate Drugs 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-M sodium 2-anthraquinonesulfonate Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)[O-])=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-M 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- CXVGEDCSTKKODG-UHFFFAOYSA-N sulisobenzone Chemical compound C1=C(S(O)(=O)=O)C(OC)=CC(O)=C1C(=O)C1=CC=CC=C1 CXVGEDCSTKKODG-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- ADLSSRLDGACTEX-UHFFFAOYSA-N tetraphenyl silicate Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 ADLSSRLDGACTEX-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- AKQNYQDSIDKVJZ-UHFFFAOYSA-N triphenylsilane Chemical compound C1=CC=CC=C1[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 description 1
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- Fixing For Electrophotography (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
本発明は、低帯電性フッ素樹脂フィルムの製造方法および導電材フリー低帯電性フッ素樹脂フィルムに関する。 The present invention relates to a method for producing a low charge fluororesin film and a conductive material-free low charge fluororesin film.
電子複写機やレーザービームプリンタ等のような電子写真式画像形成装置には、定着ローラ、帯電ローラ、現像ローラ、転写ローラまたは加圧ローラ等の各種ローラが使用されている。そのようなローラの表面には、トナーとの離型性を向上させるために、フッ素樹脂フィルムが被覆される。しかしながら、フッ素樹脂フィルムは一般に導電性が著しく低いため、電荷が溜まって、リーク等が生じるという問題が生じていた。 Various types of rollers such as a fixing roller, a charging roller, a developing roller, a transfer roller, or a pressure roller are used in an electrophotographic image forming apparatus such as an electronic copying machine or a laser beam printer. The surface of such a roller is covered with a fluororesin film in order to improve releasability from the toner. However, since the fluororesin film generally has extremely low electrical conductivity, there has been a problem that charges accumulate and leaks occur.
そこで、フッ素樹脂フィルムにカーボンブラック等の導電材を含有させることにより、フィルム表面に導電性を向上させ、電荷の滞留を回避する試みがなされている。しかしながら、配合によりフッ素樹脂本来の離型性が損なわれたり表面平滑性が悪くなる。導電材、特にカーボンブラックは分散し難いため、フィルム製造が煩雑であったりした。 Thus, attempts have been made to improve the conductivity of the film surface and avoid the retention of electric charges by incorporating a conductive material such as carbon black into the fluororesin film. However, the blending may impair the original release properties of the fluororesin or deteriorate the surface smoothness. Since the conductive material, particularly carbon black, is difficult to disperse, film production may be complicated.
一方、従来から、フッ素樹脂成形体表面に、紫外線吸収性化合物およびフッ素系界面活性剤を含有する溶液、分散液または懸濁液を付着させ、該付着表面に紫外レーザー光を照射することにより、当該処理面に対して優れた接着性等の特性を付与する技術が知られている(特許文献1,2)。
本発明は、低帯電性フッ素樹脂フィルムを製造する方法を提供することを目的とする。 An object of this invention is to provide the method of manufacturing a low-chargeable fluororesin film.
本発明はまた、導電材フリーの低帯電性フッ素樹脂フィルムを提供することを目的とする。 Another object of the present invention is to provide a conductive material-free low-chargeable fluororesin film.
本発明は、第1表面および該第1表面の裏側の第2表面を有する厚み100μm未満のフッ素樹脂フィルムの第1表面に対して、紫外線吸収性化合物およびフッ素系界面活性剤を含有する溶液、分散液または懸濁液を付着させ、該付着表面に紫外レーザー光を照射することを特徴とする低帯電性フッ素樹脂フィルムの製造方法に関する。 The present invention provides a solution containing an ultraviolet absorbing compound and a fluorosurfactant with respect to the first surface of a fluororesin film having a thickness of less than 100 μm and having a first surface and a second surface on the back side of the first surface, The present invention relates to a method for producing a low-chargeable fluororesin film, characterized in that a dispersion or suspension is adhered and an ultraviolet laser beam is irradiated onto the adhered surface.
本発明また、第1表面および該第1表面の裏側の第2表面を有する厚み100μm未満の導電材フリーフッ素樹脂フィルムの第2表面に電圧を印加して帯電させたとき、下記式;
[(V0−V120)/V0]×100
(式中、V0は電圧印加終了直後の第2表面の帯電圧(V)である;V120は電圧印加終了から120秒後の第2表面の帯電圧(V)である)
で表される帯電圧の減衰率が4%以上であることを特徴とする導電材フリーの低帯電性フッ素樹脂フィルムに関する。
In the present invention, when the second surface of the conductive material-free fluororesin film having a thickness of less than 100 μm having the first surface and the second surface on the back side of the first surface is charged by applying a voltage, the following formula:
[(V 0 −V 120 ) / V 0 ] × 100
(In the formula, V 0 is the charged voltage (V) of the second surface immediately after the end of voltage application; V 120 is the charged voltage (V) of the second surface 120 seconds after the end of voltage application)
It is related with the electroconductive material-free low-chargeable fluororesin film characterized by the attenuation rate of the charged voltage represented by the following.
本発明に係る低帯電性フッ素樹脂フィルムの製造方法によれば、フッ素樹脂フィルムの第1表面に特定の表面処理を行うことにより、第2表面に低帯電性を付与することができる。第2表面を直接的に処理することはないため、第2表面の物理的および化学的性質ならびに外観状態等の表面性状を変化させることなく、第2表面に低帯電性を付与することができる。そのような本発明の効果は、フッ素樹脂フィルムにカーボンブラック等の導電材が含有されていない場合であっても、有効に発揮し得る。その結果、本発明によれば、第2表面を直接的に処理することなしに、第2表面の帯電圧減衰率が比較的大きい導電材フリー低帯電性フッ素樹脂フィルムを提供できる。
しかも、本発明に係る低帯電性フッ素樹脂フィルムの製造方法において、第1表面に所定の表面処理を行うと、第1表面のフッ素原子が除去されて、第1表面の接着性、ぬれ性等の特性が向上する。
According to the method for producing a low-chargeable fluororesin film according to the present invention, it is possible to impart low chargeability to the second surface by performing a specific surface treatment on the first surface of the fluororesin film. Since the second surface is not directly processed, low chargeability can be imparted to the second surface without changing the physical properties and chemical properties of the second surface and the surface properties such as the appearance state. . Such an effect of the present invention can be effectively exhibited even when the fluororesin film does not contain a conductive material such as carbon black. As a result, according to the present invention, it is possible to provide a conductive material-free low-charge fluororesin film having a relatively large charge voltage decay rate on the second surface without directly treating the second surface.
Moreover, in the method for producing a low-chargeable fluororesin film according to the present invention, when a predetermined surface treatment is performed on the first surface, fluorine atoms on the first surface are removed, and the first surface has adhesiveness, wettability, etc. Improved characteristics.
(低帯電性フッ素樹脂フィルムの製造方法)
本発明に係る低帯電性フッ素樹脂フィルムの製造方法においては、フッ素樹脂フィルムの一方の面に対して所定の表面処理を行うことによって、他方の面が低帯電性となる低帯電性フッ素樹脂フィルムを得ることができる。本明細書中、所定の表面処理がなされる面を第1表面、フッ素樹脂フィルムにおいて低帯電性となる面を第2表面と呼ぶものとする。第1表面と第2表面とは互いに表裏の関係を有するものである。
(Manufacturing method of low charge fluororesin film)
In the method for producing a low charge fluororesin film according to the present invention, a low charge fluororesin film in which the other surface has low chargeability by performing a predetermined surface treatment on one surface of the fluororesin film. Can be obtained. In the present specification, a surface that is subjected to a predetermined surface treatment is referred to as a first surface, and a surface that is low in the fluororesin film is referred to as a second surface. The first surface and the second surface have a front-back relationship.
本発明の適用対象となるフッ素樹脂フィルムは厚みが100μm未満、特に10μm以上100μm未満であり、低帯電性を付与する観点から好ましくは10μm以上90μm以下であり、より好ましくは10μm以上60μm以下、さらに好ましくは10μm以上40μm以下である。厚みが大きすぎると、第2表面に低帯電性を付与できない。そのようなフィルム厚みは、後述する表面処理を行っても変化するものではない。
本明細書中、フィルム厚みはマイクロメータ(ミツトヨ製)によって測定された任意の3点の測定値を平均して用いている。
The fluororesin film to which the present invention is applied has a thickness of less than 100 μm, particularly 10 μm or more and less than 100 μm, preferably 10 μm or more and 90 μm or less, more preferably 10 μm or more and 60 μm or less, more preferably from the viewpoint of imparting low chargeability. Preferably they are 10 micrometers or more and 40 micrometers or less. If the thickness is too large, low chargeability cannot be imparted to the second surface. Such film thickness does not change even if the surface treatment described later is performed.
In this specification, the film thickness averages and uses the measured value of three arbitrary points measured with the micrometer (made by Mitutoyo).
本発明の適用対象となるフッ素樹脂フィルムは、含フッ素有機高分子化合物から製造されるフィルムである。該フィルムの基材樹脂としては、ポリテトラフルオロエチレン(PTFE)、テトラフルオロエチレン−パーフルオロアルコキシエチレン共重合体(PFA)、テトラフルオロエチレン−ヘキサフルオロプロピレン共重合体(FEP)、テトラフルオロエチレン−ヘキサフルオロプロピレン−パーフルオロアルコキシエチレン三元共重合体(EPE)、テトラフルオロエチレン−エチレン共重合体(ETFE)、ポリクロロトリフルオロエチレン(PCTFE)、トリフルオロクロロエチレン−エチレン共重合体(ECTFE)、ポリフッ化ビニリデン(PVDF)、ポリフッ化ビニル(PVF)、テトラフルオロエチレン−パーフルオロメトキシエチレン共重合体(MFA)、フッ化ビニリデン−ヘキサフルオロプロピレン共重合体、テトラフルオロエチレン−ヘキサフルオロプロピレン−フッ化ビニリデン三元共重合体(THV)、テトラフルオロエチレン−プロピレン共重合体、ダイエルサーモプラスティク(ダイキン工業製)、セントラルソフト(セントラルガラス製)、テフロンAF(デュポン製)、サイトップ(旭硝子製)、ダイニオンHTE(3M製)およびこれらの任意の2種以上の混合樹脂が例示される。フッ素樹脂フィルムには、さらに摩耗性の改善目的でシリカ、アルミナ、炭化ケイ素、窒化ケイ素などが適宜含有されて良い。 The fluororesin film to which the present invention is applied is a film produced from a fluorine-containing organic polymer compound. As the base resin of the film, polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkoxyethylene copolymer (PFA), tetrafluoroethylene-hexafluoropropylene copolymer (FEP), tetrafluoroethylene- Hexafluoropropylene-perfluoroalkoxyethylene terpolymer (EPE), tetrafluoroethylene-ethylene copolymer (ETFE), polychlorotrifluoroethylene (PCTFE), trifluorochloroethylene-ethylene copolymer (ECTFE) , Polyvinylidene fluoride (PVDF), polyvinyl fluoride (PVF), tetrafluoroethylene-perfluoromethoxyethylene copolymer (MFA), vinylidene fluoride-hexafluoropropylene copolymer, tetrafluoroethylene-hexa Fluoropropylene-vinylidene fluoride terpolymer (THV), tetrafluoroethylene-propylene copolymer, Daiel Thermoplastic (manufactured by Daikin Industries), Central Soft (manufactured by Central Glass), Teflon AF (manufactured by DuPont) , Cytop (manufactured by Asahi Glass Co., Ltd.), Dyneon HTE (manufactured by 3M), and any two or more of these mixed resins are exemplified. The fluororesin film may further contain silica, alumina, silicon carbide, silicon nitride and the like as appropriate for the purpose of improving wear.
本発明は適用対象としてのフッ素樹脂フィルムに、低帯電性のさらなる向上を目的として、導電材が含有されることを妨げるものではないが、導電材が含有されない導電材フリーのフッ素樹脂フィルムが使用されることが好ましい。導電材が含有されなくても、第2表面に対して導電性を有効に付与できるためである。導電材としては樹脂フィルムの分野で導電性付与剤として従来から使用されている公知の材料が使用可能である。導電材の具体例として、例えば、カーボンブラック、グラファイト、カーボンナノ構造体等が例示される。 Although the present invention does not prevent the conductive material from being contained in the fluororesin film as an application object for the purpose of further improving the low chargeability, a conductive material-free fluororesin film containing no conductive material is used. It is preferred that This is because even when no conductive material is contained, conductivity can be effectively imparted to the second surface. As the conductive material, a known material conventionally used as a conductivity imparting agent in the field of resin film can be used. Specific examples of the conductive material include carbon black, graphite, and carbon nanostructure.
本発明において処理されるフッ素樹脂フィルムの具体的形態は特に限定的ではなく、用途に応じて任意の形状を有して良い。例えば、平面形状、チューブ形状(筒形状)等が例示される。 The specific form of the fluororesin film treated in the present invention is not particularly limited, and may have an arbitrary shape depending on the application. For example, a planar shape, a tube shape (cylinder shape), etc. are illustrated.
本発明に係る低帯電性フッ素樹脂フィルムの製造方法においては、フッ素樹脂フィルムの第1表面に対して所定の表面処理を行う。詳しくはフッ素樹脂フィルムの第1表面に対して、紫外線吸収性化合物およびフッ素系界面活性剤を含有する溶液、分散液または懸濁液等の処理液を付着させ、該付着表面に紫外レーザー光を照射する。これによって、第2表面が低帯電性となる。 In the method for producing a low-charge fluororesin film according to the present invention, a predetermined surface treatment is performed on the first surface of the fluororesin film. Specifically, a treatment liquid such as a solution, dispersion or suspension containing an ultraviolet absorbing compound and a fluorosurfactant is attached to the first surface of the fluororesin film, and ultraviolet laser light is applied to the attached surface. Irradiate. As a result, the second surface has low chargeability.
紫外線吸収性化合物としては、自体公知のものを適宜使用すればよく、特に限定的ではないが、芳香族系紫外線吸収性化合物、例えば、芳香族炭化水素類、芳香族カルボン酸類およびその塩、芳香族アルデヒド類、芳香族アルコール類、芳香族アミン類およびその塩、芳香族スルホン酸類およびその塩およびフェノール類等が好適である。この種の芳香族系紫外線吸収性化合物としては次のものが例示される。 As the UV-absorbing compound, a compound known per se may be used as appropriate, and it is not particularly limited. However, aromatic UV-absorbing compounds such as aromatic hydrocarbons, aromatic carboxylic acids and salts thereof, aromatics Aromatic aldehydes, aromatic alcohols, aromatic amines and salts thereof, aromatic sulfonic acids and salts thereof, and phenols are preferable. Examples of this type of aromatic ultraviolet absorbing compound include the following.
ナフタレン、フェナントレン、アントラセン、ナフタセン、ピレン、ペリレン、フルオレノン、フルオランテン、9−アセチルアントラセン、9−メチルアントラセン、アントラキノンカルボン酸、アントラセン−9−メタノール、ビフェニル、安息香酸ナトリウム、フタル酸、ベンズアルデヒド、ベンジルアルコール、フェニルエタノール、ベンゼンスルホン酸、2−ナフタレンスルホン酸、アントラキノン−2−スルホン酸ナトリウム、フェノール、クレゾール、2,4−ジヒドロキシベンゾフェノン、2−ヒドロキシ−4−メトキシベンゾフェノン、2−ヒドロキシ−4−n−オクトキシベンゾフェノン、4−ドデシルオキシ−2−ヒドロキシベンゾフェノン、2−ヒドロキシ−4−オクタデシルオキシベンゾフェノン、2,2'−ジヒドロキシ−4−メトキシベンゾフェノン、2,2'−ジヒドロキシ−4,4'−ジメトキシベンゾフェノン、2,2',4,4'−テトラヒドロキシベンゾフェノン、2−ヒドロキシ−4−メトキシ−5−スルホベンゾフェノン、2−ヒドロキシー4−メトキシ−2'−カルボキシベンゾフェノン、2'−ヒドロキシ−4−クロロベンゾフェノン、2(2'−ヒドロキシ−5−メトキシフェニル)ベンゾトリアゾール、2(2'−ヒドロキシ−3',5'−ジ−t−ブチルフェニル)ベンゾトリアゾール、2(2'−ヒドロキシ−3'−t−ブチル−5'−メチルフェニル)ベンゾトリアゾール、サリチル酸フェニル、サリチル酸p−オクチルフェニル、サリチル酸p−t−ブチルフェニル、サリチル酸カルボキシフェニル、サリチル酸ストロンチウム、サリチル酸メチル、サリチル酸ドデシル、レゾルシノールモノベンゾエート、2−エチルヘキシル−2−シアノ−3,3−ジフェニルアクリレート、エチル−2−シアノ−3,3−ジフェニルアクリレート、Ni−ビスオクチルフェニルスルフィド、[2,2'−チオビス(4−t−オクチルフェノラト)]−n−ブチルアミン−Ni。 Naphthalene, phenanthrene, anthracene, naphthacene, pyrene, perylene, fluorenone, fluoranthene, 9-acetylanthracene, 9-methylanthracene, anthraquinonecarboxylic acid, anthracene-9-methanol, biphenyl, sodium benzoate, phthalic acid, benzaldehyde, benzyl alcohol, Phenylethanol, benzenesulfonic acid, 2-naphthalenesulfonic acid, sodium anthraquinone-2-sulfonate, phenol, cresol, 2,4-dihydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2-hydroxy-4-n-oct Xylbenzophenone, 4-dodecyloxy-2-hydroxybenzophenone, 2-hydroxy-4-octadecyloxybenzophenone, 2,2'-dihydride Xyl-4-methoxybenzophenone, 2,2′-dihydroxy-4,4′-dimethoxybenzophenone, 2,2 ′, 4,4′-tetrahydroxybenzophenone, 2-hydroxy-4-methoxy-5-sulfobenzophenone, 2, -Hydroxy-4-methoxy-2'-carboxybenzophenone, 2'-hydroxy-4-chlorobenzophenone, 2 (2'-hydroxy-5-methoxyphenyl) benzotriazole, 2 (2'-hydroxy-3 ', 5'- Di-t-butylphenyl) benzotriazole, 2 (2′-hydroxy-3′-t-butyl-5′-methylphenyl) benzotriazole, phenyl salicylate, p-octylphenyl salicylate, p-t-butylphenyl salicylate, Carboxyphenyl salicylate, strontium salicylate, methyl salicylate, salicylate Acid dodecyl, resorcinol monobenzoate, 2-ethylhexyl-2-cyano-3,3-diphenyl acrylate, ethyl-2-cyano-3,3-diphenyl acrylate, Ni-bisoctylphenyl sulfide, [2,2′-thiobis ( 4-t-octylphenolato)]-n-butylamine-Ni.
フッ素系界面活性剤としては、疎水性基としてフルオロカーボン鎖を有する自体公知の界面活性剤を適宜使用すればよい。この種のフッ素系界面活性剤としては、次の活性剤が例示される。 As the fluorosurfactant, a per se known surfactant having a fluorocarbon chain as a hydrophobic group may be appropriately used. Examples of this type of fluorosurfactant include the following activators.
(1)アニオン性フッ素系界面活性剤
RfCOOM;
RfSO2N(R)2CH2COOM;
RfCONRYOSO3M;
RfSO2NRYOSO3M;
RfSO3M;
RfCH2O(CH2)2SO3M
R f SO 2 N (R) 2 CH 2 COOM;
R f CONYOSO 3 M;
R f SO 2 NRYOSO 3 M;
R f SO 3 M;
R f CH 2 O (CH 2 ) 2 SO 3 M
(2)カチオン性フッ素系界面活性剤
RfCONHYN(R)(R')・HX;
RfSO2NHYN(R)(R')・HX
R f SO 2 NHYN (R) (R ′) · HX
(3)両性フッ素系界面活性剤
(4)ノニオン性フッ素系界面活性剤
RfOH;
好適な市販のフッ素系界面活性剤としては、セイミケミカル株式会社製の「サーフロンS−111」(パーフルオロアルキルカルボン酸塩)、「サーフロンS−112」(パーフルオロアルキルリン酸エステル)、「サーフロンS−113」(パーフルオロアルキルカルボン酸塩)、「サーフロンS−121」(パーフルオロアルキルトリメチルアンモニウム塩)、「サーフロンS−131」(パーフルオロアルキルベタイン)、「サーフロンS−132」(パーフルオロアルキルベタイン)「サーフロンS−141」(パーフルオロアルキルアミンオキサイド)、「サーフロンS−145」(パーフルオロアルキルエチレンオキサイド付加物)、「サーフロンS−381」(パーフルオロアルキル含有オリゴマー)、「サーフロンS−383」(パーフルオロアルキル含有オリゴマー)、「サーフロンS−393」(パーフルオロアルキル含有オリゴマー)、「サーフロンSC−101」(パーフルオロアルキル含有オリゴマー)、「サーフロンSC−105」(パーフルオロアルキル含有オリゴマー)、「サーフロンKH−40」(パーフルオロアルキルエチレンオキシド付加物)および「サーフロンSA−100」(パーフルオロアルキル含有特殊配合品)等が例示される。 Suitable commercially available fluorosurfactants include “Surflon S-111” (perfluoroalkyl carboxylate), “Surflon S-112” (perfluoroalkyl phosphate ester), “Surflon” manufactured by Seimi Chemical Co., Ltd. "S-113" (perfluoroalkylcarboxylate), "Surflon S-121" (perfluoroalkyltrimethylammonium salt), "Surflon S-131" (perfluoroalkylbetaine), "Surflon S-132" (perfluoro Alkylbetaines) “Surflon S-141” (perfluoroalkylamine oxide), “Surflon S-145” (perfluoroalkylethylene oxide adduct), “Surflon S-381” (perfluoroalkyl-containing oligomer), “Surflon S” -383 "( -Fluoroalkyl-containing oligomer), "Surflon S-393" (perfluoroalkyl-containing oligomer), "Surflon SC-101" (perfluoroalkyl-containing oligomer), "Surflon SC-105" (perfluoroalkyl-containing oligomer), " Examples include "Surflon KH-40" (perfluoroalkylethylene oxide adduct) and "Surflon SA-100" (perfluoroalkyl-containing special compound).
他の好適な市販のフッ素系界面活性剤としては、住友スリーエム株式会社製の「フロラードFC−430」(フッ素化アルキルエステル)および「フロラードFC−431」(フッ素化アルキルエステル)等、並びに三菱マテリアル株式会社製の「エフトップEF−102」(パーフルオロスルホン酸塩)、「エフトップEF−103」(パーフルオロスルホン酸塩)、「エフトップEF−104」(パーフルオロスルホン酸塩)、「エフトップEF−122」(パーフルオロアルキルエチレンオキシド付加物)、「エフトップEF−351」(フッ素化アルキルエステル)、「エフトップEF−352」(フッ素化アルキルエステル)、「エフトップEF−801」(フッ素化アルキルエステル)、「エフトップEF−802」(フッ素化アルキルエステル)および「エフトップEF−601」(フッ素化アルキルエステル)、株式会社ネオス製の「フタージェント251」(フッ素化アルキルエステル)、FTX−218」(フッ素化アルキルエステル)、大日本インキ化学工業株式会社製「メガファックF−470」(フッ素化アルキルエステル)、「メガファックF−482」(フッ素化アルキルエステル)、「メガファックF−484」(フッ素化アルキルエステル)、「メガファックF−487」(フッ素化アルキルエステル)等が例示できる。 Other suitable commercially available fluorosurfactants include “Florard FC-430” (fluorinated alkyl ester) and “Florard FC-431” (fluorinated alkyl ester) manufactured by Sumitomo 3M Limited, and Mitsubishi Materials. “F-top EF-102” (perfluorosulfonate), “F-top EF-103” (perfluorosulfonate), “F-top EF-104” (perfluorosulfonate), “ F-top EF-122 (perfluoroalkylethylene oxide adduct), F-top EF-351 (fluorinated alkyl ester), F-top EF-352 (fluorinated alkyl ester), F-top EF-801 (Fluorinated alkyl ester), “F-top EF-802” (fluorinated) Alkyl ester) and "F-top EF-601" (fluorinated alkyl ester), Neos' "Factent 251" (fluorinated alkyl ester), FTX-218 "(fluorinated alkyl ester), Dainippon Ink and Chemicals, Inc. “Megafac F-470” (fluorinated alkyl ester), “Megafac F-482” (fluorinated alkyl ester), “Megafac F-484” (fluorinated alkyl ester), “Megafac F” -487 "(fluorinated alkyl ester).
有機ケイ素化合物としては、自体公知のものを適宜使用すればよいが、特に好適なものとしては、(トリフェニルシリル)アセチレン、フェニルシラン、テトラフェノキシシラン、トリフェニルシラン、トリベンジルシラン、アリルトリフェニルシラン、トリフェニルビニルシランおよびフェニルトリエトキシシラン等が例示される。このような有機ケイ素化合物は所望により2種以上適宜併用してもよい。 As the organosilicon compound, those known per se may be used as appropriate. Particularly preferred are (triphenylsilyl) acetylene, phenylsilane, tetraphenoxysilane, triphenylsilane, tribenzylsilane, allyltriphenyl. Examples include silane, triphenylvinylsilane, and phenyltriethoxysilane. Two or more of these organosilicon compounds may be used in combination as desired.
紫外線吸収性化合物およびフッ素系界面活性剤、ならびに所望により使用される有機ケイ素化合物(以下、単に紫外線吸収性化合物等という)は、フッ素樹脂フィルム第1表面の改質効率および作業性等の観点からは、水または水溶性有機溶剤を溶媒とする溶液、分散液または懸濁液(以下、単に溶液等という)として該第1表面に付着させる。該溶液等の溶媒としては、水と水溶性の有機溶剤、例えば、低級アルコール(例えば、メタノール、エタノール、イソプロパノールおよびブタノール等)等との混合物を使用してもよい。水溶液として使用する場合には、紫外線吸収性化合物等の溶解性を高めるために、水溶性有機溶剤、例えば、イソプロパノール等の低級アルコール等を適宜配合してもよい。 The UV-absorbing compound, the fluorosurfactant, and the organosilicon compound (hereinafter simply referred to as UV-absorbing compound) used as desired are from the viewpoint of the modification efficiency and workability of the first surface of the fluororesin film. Is attached to the first surface as a solution, dispersion or suspension (hereinafter simply referred to as a solution or the like) using water or a water-soluble organic solvent as a solvent. As a solvent such as the solution, a mixture of water and a water-soluble organic solvent such as a lower alcohol (for example, methanol, ethanol, isopropanol, butanol, etc.) may be used. When used as an aqueous solution, a water-soluble organic solvent, for example, a lower alcohol such as isopropanol may be appropriately blended in order to enhance the solubility of the ultraviolet absorbing compound.
水および/または水溶性有機溶剤を溶媒とする溶液等における紫外線吸収性化合物の濃度は、該化合物の種類や水等に対する溶解度、被処理フッ素樹脂の種類、および共存するフッ素系界面活性剤/有機ケイ素化合物の種類や濃度等によって左右され、特に限定的ではないが、一般的には0.05〜10重量%、好ましくは0.1〜5重量%である。 The concentration of the UV-absorbing compound in a solution using water and / or a water-soluble organic solvent as a solvent is determined depending on the type of the compound, the solubility in water, the type of fluororesin to be treated, and the coexisting fluorosurfactant / organic Although it depends on the type and concentration of the silicon compound and is not particularly limited, it is generally 0.05 to 10% by weight, preferably 0.1 to 5% by weight.
溶液等におけるフッ素系界面活性剤の濃度は、紫外線吸収性化合物または紫外線吸収性化合物と有機ケイ素化合物をフッ素樹脂フィルム第1表面に十分な濃度で均一に存在させる濃度であればよく、特に限定的ではないが、一般的には0.05〜2重量%、好ましくは、0.1〜1重量%である。 The concentration of the fluorosurfactant in the solution or the like is not particularly limited as long as it is a concentration that allows the UV-absorbing compound or the UV-absorbing compound and the organosilicon compound to be uniformly present at a sufficient concentration on the first surface of the fluororesin film. However, it is generally 0.05 to 2% by weight, preferably 0.1 to 1% by weight.
溶液等における有機ケイ素化合物の濃度は、該化合物の種類や水等に対する溶解度、被処理フッ素樹脂の種類、および共存する紫外線吸収性化合物とフッ素系界面活性剤の種類や濃度等によって左右され、特に限定的ではないが、一般的には0.05〜10重量%、好ましくは0.1〜5重量%である。 The concentration of the organosilicon compound in the solution depends on the type of the compound, the solubility in water, etc., the type of the fluororesin to be treated, and the type and concentration of the coexisting ultraviolet absorbing compound and the fluorosurfactant. Although not limited, it is generally 0.05 to 10% by weight, preferably 0.1 to 5% by weight.
フッ素樹脂フィルム第1表面に、紫外線吸収性化合物等の溶液等を存在させる方法は、塗布法、噴霧法または浸漬法等のいずれであってもよい。また、該溶液等をフッ素樹脂フィルム第1表面に存在させた後、紫外線レーザー光照射前に乾燥処理をおこなってもよい。乾燥処理は自然乾燥で十分であるが、所望により、例えば、60〜150℃で強制的におこなってもよい。フッ素系界面活性剤の作用により、紫外線吸収性化合物または紫外線吸収性化合物と有機ケイ素化合物はフッ素樹脂フィルム第1表面に十分な濃度で均一に存在する。 The method of allowing a solution such as an ultraviolet absorbing compound to be present on the first surface of the fluororesin film may be any of a coating method, a spraying method, a dipping method, and the like. Moreover, after making this solution etc. exist in the fluororesin film 1st surface, you may perform a drying process before ultraviolet laser beam irradiation. Although natural drying is sufficient as a drying process, you may forcibly carry out at 60-150 degreeC as needed. Due to the action of the fluorosurfactant, the UV-absorbing compound or the UV-absorbing compound and the organosilicon compound are uniformly present at a sufficient concentration on the first surface of the fluororesin film.
本発明においては、紫外線吸収性化合物等をフッ素樹脂フィルムの第1表面に存在させた条件下において、該第1表面に紫外レーザー光を照射する。紫外レーザー光としては、波長が400nm以下のものが望ましく、アルゴンレーザー光、クリプトンイオンレーザー光、Nd:YAGレーザー光、N2レーザー光、色素レーザー光、およびエキシマレーザー光等が例示される。中でも、193〜308nmのエキシマレーザー光が好適である。特に、高出力が長時間にわたって安定して得られるKrFエキシマレーザー光(波長:248nm)、ArFエキシマレーザー光(波長:193nm)およびXeClエキシマレーザー光(308nm)が好ましい。エキシマレーザー光照射は、通常、室温、大気中でおこなうが、酸素雰囲気中でおこなってもよい。 In the present invention, the first surface is irradiated with ultraviolet laser light under the condition that an ultraviolet absorbing compound or the like is present on the first surface of the fluororesin film. As the ultraviolet laser light, one having a wavelength of 400 nm or less is desirable, and examples include argon laser light, krypton ion laser light, Nd: YAG laser light, N 2 laser light, dye laser light, and excimer laser light. Among these, excimer laser light having a wavelength of 193 to 308 nm is preferable. In particular, KrF excimer laser light (wavelength: 248 nm), ArF excimer laser light (wavelength: 193 nm), and XeCl excimer laser light (308 nm) that can stably obtain a high output for a long time are preferable. Excimer laser light irradiation is usually performed at room temperature in the air, but may be performed in an oxygen atmosphere.
紫外レーザー光の総照射量は適度な範囲内に設定される。総照射量が少なすぎても、または多すぎても、第2表面に低帯電性が付与されない。そのような適度な総照射量範囲は、レーザー光の種類に依存して決定される。
例えば、KrFエキシマレーザー光が使用される場合、総照射量は0.10〜0.55J/cm2であり、第2表面に低帯電性を付与する観点から好ましくは0.10〜0.45J/cm2である。
また例えば、ArFエキシマレーザー光が使用される場合、総照射量は0.05〜0.30J/cm2であり、第2表面に低帯電性を付与する観点から好ましくは0.05〜0.20J/cm2である。
また例えば、XeClエキシマレーザー光が使用される場合、総照射量は総照射量は0.20〜1.00J/cm2であり、第2表面に低帯電性を付与する観点から好ましくは0.20〜0.80J/cm2である。
The total irradiation amount of the ultraviolet laser light is set within an appropriate range. Even if the total irradiation amount is too small or too large, low chargeability is not imparted to the second surface. Such an appropriate total irradiation dose range is determined depending on the type of laser light.
For example, when KrF excimer laser light is used, the total irradiation amount is 0.10 to 0.55 J / cm 2 , and preferably 0.10 to 0.45 J from the viewpoint of imparting low chargeability to the second surface. / Cm 2 .
For example, when ArF excimer laser light is used, the total irradiation amount is 0.05 to 0.30 J / cm 2 , and preferably 0.05 to 0. 0 from the viewpoint of imparting low chargeability to the second surface. 20 J / cm 2 .
In addition, for example, when XeCl excimer laser light is used, the total irradiation amount is 0.20 to 1.00 J / cm 2 , and preferably from the viewpoint of imparting low chargeability to the second surface. it is a 20~0.80J / cm 2.
紫外レーザー光は通常、複数回にわけて照射される。1ショットあたりの照射量およびショット数は、総照射量が上記範囲内であれば特に制限されるものではない。
例えば、KrFエキシマレーザー光が使用される場合、1ショットあたりの照射量は通常、20〜200mJ/cm2/1ショット、好ましくは30〜100mJ/cm2/1ショットであり、ショット数は通常、2〜20回、好ましくは2〜10回である。
The ultraviolet laser light is usually irradiated in multiple times. The irradiation amount per shot and the number of shots are not particularly limited as long as the total irradiation amount is within the above range.
For example, if the KrF excimer laser light is used, irradiation dose per one shot is usually, 20~200mJ / cm 2/1-shot, preferably 30~100mJ / cm 2/1-shot, the number of shots normally 2 to 20 times, preferably 2 to 10 times.
(低帯電性フッ素樹脂フィルム)
フッ素樹脂フィルムの第1表面に対して、以上の表面処理を行って製造された本発明の低帯電性フッ素樹脂フィルムは、前記したように、第2表面に優れた低帯電性を有する。特に、表面処理されるフッ素樹脂フィルムが導電材を含有しない導電材フリーのフッ素樹脂フィルムである場合、本発明の導電材フリー低帯電性フッ素樹脂フィルムは、第2表面に電圧を印加して帯電させたとき、下記式;
[(V0−V120)/V0]×100
(式中、V0は電圧印加終了直後の第2表面の帯電圧(V)である;V120は電圧印加終了から120秒後の第2表面の帯電圧(V)である)
で表される帯電圧の減衰率が4%以上、特に4〜20%であり、好ましくは6〜20%、より好ましくは10〜20%である。導電材フリーのフッ素樹脂フィルムは一般に、帯電圧の減衰率が約2%以下であり、本発明によって約2倍以上、好ましくは3倍以上、より好ましくは5倍以上の減衰率を付与できることがわかる。なお、本発明において低帯電性とは、上記帯電圧の減衰率を達成するものをいう。
(Low-charge fluoropolymer film)
The low charge fluororesin film of the present invention produced by performing the above surface treatment on the first surface of the fluororesin film has excellent low chargeability on the second surface as described above. In particular, when the surface-treated fluororesin film is a conductive material-free fluororesin film containing no conductive material, the conductive material-free low-charge fluoropolymer film of the present invention is charged by applying a voltage to the second surface. The following formula:
[(V 0 −V 120 ) / V 0 ] × 100
(In the formula, V 0 is the charged voltage (V) of the second surface immediately after the end of voltage application; V 120 is the charged voltage (V) of the second surface 120 seconds after the end of voltage application)
The attenuation rate of the charged voltage represented by is 4% or more, particularly 4 to 20%, preferably 6 to 20%, more preferably 10 to 20%. In general, a conductive material-free fluororesin film has a charging voltage attenuation rate of about 2% or less, and the present invention can provide an attenuation rate of about 2 times or more, preferably 3 times or more, more preferably 5 times or more. Recognize. In the present invention, the low charging property means a material that achieves the above-mentioned voltage decay rate.
帯電圧V0およびV120は、JIS L1094(1997)で規定される「5.1 半減期測定法」に従って、温度23℃、湿度50%RHの周囲環境下で測定できる。 The charged voltages V 0 and V 120 can be measured in an ambient environment at a temperature of 23 ° C. and a humidity of 50% RH in accordance with “5.1 Half Life Measurement Method” defined in JIS L1094 (1997).
詳しくは、まず、試験片を作製する。試験片は、低帯電性フッ素樹脂フィルムを第1表面でシリコーンゴム層によりアルミニウム板に貼り合わせたものである。具体的には、低帯電性フッ素樹脂フィルム(縦150mm×横150mm)の第1表面を、アルミニウム板(縦120mm×横120mm×厚1mm)に対して、二液付加型シリコーンゴム(硬度JIS A 10度、体積抵抗率1015Ω・cm絶縁体)を用いて貼り合わせ、この積層体を無荷重条件下において120℃で30分間加熱することによってサンプルを製造する。サンプルを45mm×45mmに切断し、試験片として用いる。 Specifically, first, a test piece is prepared. The test piece is a low-charge fluororesin film bonded to an aluminum plate with a silicone rubber layer on the first surface. Specifically, the first surface of a low-charge fluoropolymer film (length 150 mm × width 150 mm) is applied to an aluminum plate (length 120 mm × width 120 mm × thickness 1 mm) with a two-component addition type silicone rubber (hardness JIS A A sample is manufactured by bonding the laminated body at 10 ° C. and a volume resistivity of 10 15 Ω · cm insulator) and heating the laminated body at 120 ° C. for 30 minutes under no-load condition. A sample is cut into 45 mm × 45 mm and used as a test piece.
次いで、除電装置を用いて試験片を除電した後、測定機に取り付ける。測定機は、上記JIS規格に規定されたものであり、詳しくは図1に示す。図1の測定機は、印加部(針電極)1、受電部2、ターンテーブル3、および試験片取付枠4を備え、印加部1は高圧直流電源に接続され、受電部はシンクロスコープ又は記録計に接続されている。5は目盛板、6は指針、7はアームを示す。そのような測定機において試験片は、第2表面が上になるように試験片取付枠4に取り付けられる。 Next, the test piece is neutralized using a static eliminator and then attached to a measuring machine. The measuring machine is defined in the JIS standard, and is shown in detail in FIG. 1 includes an application unit (needle electrode) 1, a power reception unit 2, a turntable 3, and a test piece mounting frame 4. The application unit 1 is connected to a high-voltage DC power source, and the power reception unit is a synchroscope or a recording device. Connected to the total. 5 is a scale plate, 6 is a pointer, and 7 is an arm. In such a measuring machine, the test piece is attached to the test piece mounting frame 4 so that the second surface faces up.
その後、ターンテーブル3を回転させながら、(+)10kVの印加を30秒間行った後、印加を止め、ターンテーブル3をそのまま回転させる。電圧印加終了直後の初期帯電圧V0と電圧印加を終了してから120秒後の帯電圧V120とを測定する。
そのような測定を3個の試験片について繰り返し行い、それらの平均値を用いる。
Thereafter, while rotating the turntable 3, (+) 10 kV is applied for 30 seconds, then the application is stopped and the turntable 3 is rotated as it is. The initial charged voltage V 0 immediately after the voltage application is finished and the charged voltage V 120 120 seconds after the voltage application is finished are measured.
Such a measurement is repeated for three specimens and their average value is used.
本発明の低帯電性フッ素樹脂フィルムにおいて、エキシマレーザーを照射することが共通であれば、第1表面の表面抵抗率は厚みによりあまり左右されない。しかし、第2表面側の減衰率は、エキシマレーザーの照射が共通であっても、厚みの違いによりに値は大きく変動する。厚みが100μm以上であれば、エキシマレーザーの照射を実施しても、第2表面の低帯電性は十分に得られない。 In the low charge fluororesin film of the present invention, if it is common to irradiate an excimer laser, the surface resistivity of the first surface is not greatly influenced by the thickness. However, the attenuation rate on the second surface side varies greatly depending on the difference in thickness even when excimer laser irradiation is common. If the thickness is 100 μm or more, low chargeability of the second surface cannot be sufficiently obtained even when excimer laser irradiation is performed.
(用途)
フッ素樹脂フィルムの第1表面に対して、以上の表面処理を行って製造された本発明の低帯電性フッ素樹脂フィルムは、前記したように、第2表面に低帯電性を付与すると同時に、第1表面の接着性、ぬれ性等の特性も向上する。そのため、本発明のフッ素樹脂フィルムは、電子写真式画像形成装置の定着ローラ、帯電ローラ、現像ローラ、転写ローラまたは加圧ローラの表面層として使用されることが好ましい。詳しくは、本発明の低帯電性フッ素樹脂フィルムは、第1表面が内側に、第2表面が外側に向くように、ローラに被覆されて使用される。
(Use)
As described above, the low-charge fluoropolymer film of the present invention produced by performing the above surface treatment on the first surface of the fluororesin film imparts low chargeability to the second surface, and at the same time, Properties such as adhesion and wettability of one surface are also improved. Therefore, the fluororesin film of the present invention is preferably used as a surface layer of a fixing roller, a charging roller, a developing roller, a transfer roller, or a pressure roller of an electrophotographic image forming apparatus. Specifically, the low-charge fluororesin film of the present invention is used by being coated on a roller so that the first surface faces inward and the second surface faces outward.
低帯電性フッ素樹脂フィルムは、上記ローラに使用する場合、チューブ形状を有することが特に好ましい。この場合、チューブ内面側にはシリコンゴム等が接着されるため第1表面が位置し、チューブ外面(表面)側は第2表面が位置するような形状とされる。 It is particularly preferable that the low-chargeable fluororesin film has a tube shape when used for the roller. In this case, the first surface is positioned because silicon rubber or the like is bonded to the inner surface of the tube, and the second surface is positioned on the outer surface (surface) side of the tube.
(実施例1)
フェナントレン1.0重量%およびトリベンジルシラン1.0重量%のエタノール溶液に、「フロラードFC−430」(住友スリーエム株式会社製市販品;フッ素化アルキルエステル)を1.0重量%の濃度で添加した処理液を調製した。アプリケーター(ヨシミツ精機株式会社製「YA型アプリケーター」)を使用して、前記処理液をPFA製フィルム(フィルム厚み:20μm、導電材フリー)の一方の表面(第1表面)の上に塗布厚25μmになるように塗布し、約30分間自然乾燥させ、塗膜を形成した。塗膜を形成した表面に、KrFエキシマレーザー光を、総照射量が0.3J/cm2になるように照射した。
Example 1
"Fluorard FC-430" (commercially available from Sumitomo 3M Limited; fluorinated alkyl ester) is added at a concentration of 1.0% by weight to an ethanol solution of 1.0% by weight of phenanthrene and 1.0% by weight of tribenzylsilane. A treated liquid was prepared. Using an applicator (“YA type applicator” manufactured by Yoshimitsu Seiki Co., Ltd.), the treatment liquid is applied on one surface (first surface) of a PFA film (film thickness: 20 μm, conductive material free) with a coating thickness of 25 μm. And dried naturally for about 30 minutes to form a coating film. The surface on which the coating film was formed was irradiated with KrF excimer laser light so that the total irradiation amount was 0.3 J / cm 2 .
(実施例2〜10/比較例1〜17)
表に記載の塗布条件、フィルム条件および照射条件を採用したこと以外、実施例1と同様の方法により、PFA製フィルムの第1表面に対して表面処理を行った。
(Examples 2 to 10 / Comparative Examples 1 to 17)
Surface treatment was performed on the first surface of the PFA film by the same method as in Example 1 except that the coating conditions, film conditions, and irradiation conditions described in the table were adopted.
(第2表面の帯電圧)
実施例/比較例で得られたフィルム(縦150mm×横150mm)を用いて、前記した方法に従って、試験片の作製および電圧印加終了直後の初期帯電圧V0と電圧印加を終了してから120秒後の帯電圧V120との測定を行った。
(Battery voltage on the second surface)
Using the films (150 mm long × 150 mm wide) obtained in the examples / comparative examples, according to the method described above, the initial charging voltage V 0 and voltage application immediately after completion of the preparation of the test piece and voltage application were completed. Measurement with the charged voltage V 120 after 2 seconds was performed.
(第1表面の表面抵抗率)
実施例/比較例で得られたフィルム(縦150mm×横150mm)の第1表面において、三菱化学社製ハイレスタ−IP MCP−HT260を用いて任意の3箇所で表面抵抗率を測定し、それらの平均を測定値とした。抵抗に合わせて測定電圧、プローブを変えた。
(Surface resistivity of the first surface)
On the first surface of the film (150 mm long × 150 mm wide) obtained in the examples / comparative examples, surface resistivity was measured at any three locations using Hiresta-IP MCP-HT260 manufactured by Mitsubishi Chemical Corporation. The average was taken as the measured value. The measurement voltage and probe were changed according to the resistance.
(表面性状)
未処理の前記PFAフィルムおよび所定の実施例/比較例で得られたフィルムにおける第1表面および第2表面について、元素分析を行い、さらに走査型電子顕微鏡で観察した。元素分析の結果を表3に示す。走査型電子顕微鏡写真を図2〜図6に示す。図2は、実施例8で得られたフィルムにおける第2表面の走査型電子顕微鏡写真(SEM写真)である。図3は、実施例9で得られたフィルムにおける第2表面の走査型電子顕微鏡写真(SEM写真)である。図4は、比較例12で得られたフィルムにおける第2表面の走査型電子顕微鏡写真(SEM写真)である。図5は、未処理PFAフィルムにおける表面の走査型電子顕微鏡写真(SEM写真)である。図6は、実施例9で得られたフィルムにおける第1表面の走査型電子顕微鏡写真(SEM写真)である。
(Surface properties)
Elemental analysis was performed on the first and second surfaces of the untreated PFA film and the films obtained in the predetermined examples / comparative examples, and further observed with a scanning electron microscope. Table 3 shows the results of elemental analysis. Scanning electron micrographs are shown in FIGS. FIG. 2 is a scanning electron micrograph (SEM photograph) of the second surface of the film obtained in Example 8. FIG. 3 is a scanning electron micrograph (SEM photograph) of the second surface of the film obtained in Example 9. FIG. 4 is a scanning electron micrograph (SEM photograph) of the second surface of the film obtained in Comparative Example 12. FIG. 5 is a scanning electron micrograph (SEM photograph) of the surface of an untreated PFA film. 6 is a scanning electron micrograph (SEM photograph) of the first surface of the film obtained in Example 9. FIG.
表3より、所定の表面処理を第1表面に対して行うと、第1表面においてフッ素原子は有効に低減され、酸素原子は増大するが、第2表面において組成比は変化しない。このことより、第2表面の物理的および化学的性質は変化していないと考えられる。
図2〜図5より、所定の表面処理を第1表面に対して行っても、第2表面の外観状態に変化はないことがわかった。
図5および図6より、所定の表面処理によって、第1表面は荒れることがわかった。
これらの結果より、本発明は、第2表面において物理的および化学的性質ならびに外観状態等の表面性状を変化させることなく、第2表面が低帯電性となることが明らかである。
From Table 3, when the predetermined surface treatment is performed on the first surface, fluorine atoms are effectively reduced and oxygen atoms are increased on the first surface, but the composition ratio does not change on the second surface. This suggests that the physical and chemical properties of the second surface have not changed.
2-5, even if it performed predetermined surface treatment with respect to the 1st surface, it turned out that the external appearance state of a 2nd surface does not change.
5 and 6 that the first surface is roughened by a predetermined surface treatment.
From these results, it is apparent that the second surface has low chargeability without changing the physical and chemical properties and the surface properties such as the appearance state on the second surface.
本発明の低帯電性フッ素樹脂フィルムの製造方法は、電子写真式画像形成装置等の分野で有用である。
特に本発明の導電材フリー低帯電性フッ素樹脂フィルムは、電子写真式画像形成装置の構成部材、例えば、定着ローラ、帯電ローラ、現像ローラ、転写ローラまたは加圧ローラの表面層として有用である。
The method for producing a low-chargeable fluororesin film of the present invention is useful in the field of electrophotographic image forming apparatuses and the like.
In particular, the conductive material-free low-charge fluororesin film of the present invention is useful as a surface layer of a component of an electrophotographic image forming apparatus, for example, a fixing roller, a charging roller, a developing roller, a transfer roller, or a pressure roller.
Claims (7)
[(V0−V120)/V0]×100
(式中、V0は電圧印加終了直後の第2表面の帯電圧(V)である;V120は電圧印加終了から120秒後の第2表面の帯電圧(V)である)
で表される帯電圧の減衰率が4%以上であることを特徴とする導電材フリーの低帯電性フッ素樹脂フィルム。 When a voltage is applied to the second surface of the conductive material-free fluororesin film having a thickness of less than 100 μm having the first surface and the second surface on the back side of the first surface, the following formula:
[(V 0 −V 120 ) / V 0 ] × 100
(In the formula, V 0 is the charged voltage (V) of the second surface immediately after the end of voltage application; V 120 is the charged voltage (V) of the second surface 120 seconds after the end of voltage application)
A conductive material-free low-charge fluororesin film, characterized in that the attenuation rate of the charged voltage represented by the formula is 4% or more.
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WO1996022323A1 (en) * | 1995-01-18 | 1996-07-25 | Kurashiki Boseki Kabushiki Kaisha | Tubular film having treated internal surface and apparatus and method for treating the internal surface |
JPH10221995A (en) * | 1997-02-10 | 1998-08-21 | Hokushin Ind Inc | Roll |
JP2983438B2 (en) * | 1993-10-15 | 1999-11-29 | 倉敷紡績株式会社 | Modification method of fluororesin molding surface |
JP3433931B2 (en) * | 2001-04-17 | 2003-08-04 | 倉敷紡績株式会社 | Modification method of fluororesin molded body surface |
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JP2983438B2 (en) * | 1993-10-15 | 1999-11-29 | 倉敷紡績株式会社 | Modification method of fluororesin molding surface |
WO1996022323A1 (en) * | 1995-01-18 | 1996-07-25 | Kurashiki Boseki Kabushiki Kaisha | Tubular film having treated internal surface and apparatus and method for treating the internal surface |
JPH10221995A (en) * | 1997-02-10 | 1998-08-21 | Hokushin Ind Inc | Roll |
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JP2022093318A (en) * | 2020-12-11 | 2022-06-23 | グンゼ株式会社 | Fluororesin film and method for producing fluororesin film |
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