JP2010147356A - Method of manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent a resin protective film from being easily warped entirely in curing when forming the resin protective film for protecting bottom and side faces of a silicon substrate. <P>SOLUTION: First, a first groove 27 is formed in a semiconductor wafer 21, a sealing film 12, and the like at a dicing street 22 and parts corresponding to both the sides of the dicing street 22. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the groove 27. Then, a resin protective film 11 is formed on bottom faces of the respective silicon substrates 1 including the inside of the first groove 27. In this case, although the semiconductor wafer 21 is separated into the individual silicon substrates 1, a support plate 24 is stuck to upper surfaces of a columnar electrode 10 and the sealing film 12 via an adhesive layer 23, thus preventing an entire part including the individually separated silicon substrates 1 from being warped easily when forming the resin protective film 11. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device.

  A conventional semiconductor device is known as a CSP (Chip Size Package) (see, for example, Patent Document 1). In this semiconductor device, a plurality of wirings are provided on the upper surface of the insulating film provided on the semiconductor substrate, a columnar electrode is provided on the upper surface of the connection pad portion of the wiring, and a sealing film is provided on the upper surface of the insulating film including the wiring. The upper surface is provided so as to be flush with the upper surface of the columnar electrode, and solder balls are provided on the upper surface of the columnar electrode. In this case, in order to prevent the lower surface and side surfaces of the semiconductor substrate from being exposed, the lower surface and side surfaces of the semiconductor substrate are covered with a resin protective film.

Japanese Patent No. 4103896

  In the above conventional semiconductor device manufacturing method, first, a semiconductor substrate having a wafer state (hereinafter referred to as a semiconductor wafer) on which an insulating film, a wiring, a columnar electrode, and a sealing film are formed is prepared. . Next, the semiconductor wafer is turned upside down. Next, a groove having a predetermined width is formed between the semiconductor device forming regions on the bottom side of the semiconductor wafer (on the side opposite to the surface on which the sealing film or the like is formed) until reaching the middle of the sealing film. To do. In this state, the semiconductor wafer is separated into individual semiconductor substrates by forming grooves.

  Next, a resin protective film is formed on the bottom surface of each semiconductor substrate including the inside of the trench. Next, the entire top and bottom including each semiconductor substrate is inverted. Next, a solder ball is formed on the upper surface of the columnar electrode. Next, the sealing film and the resin protective film are cut at the center in the width direction of the groove. Thus, a semiconductor device having a structure in which the bottom and side surfaces of the semiconductor substrate are covered with the resin protective film is obtained.

  However, in the above conventional method for manufacturing a semiconductor device, after forming a groove by half-cut on the bottom surface side of the semiconductor wafer that is turned upside down until it reaches the middle of the sealing film, it is formed on the bottom surface of each semiconductor substrate including the inside of the groove. Since only the resin protective film is formed, that is, only the resin protective film is formed in the state where the semiconductor wafer is separated into individual semiconductor substrates by the formation of grooves, the half-cut process and the subsequent steps Since the strength in the process is lowered and the entire substrate including each semiconductor substrate is warped relatively greatly, there is a problem that it is difficult to maintain quality and handling in each process becomes difficult.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device that can prevent the entire substrate including each semiconductor substrate from being warped when forming a resin protective film for protecting the semiconductor substrate.

According to the first aspect of the present invention, an insulating film is formed on one surface of a semiconductor wafer having an integrated circuit formed on one surface, and an electrode connection pad portion is formed on the insulating film by being connected to the integrated circuit. A step of preparing an external connection bump electrode formed on the electrode connection pad portion and a sealing film formed around the external connection bump electrode; and the external connection bump electrode and the A step of attaching a support plate on the sealing film, and forming a first groove reaching the middle position of the thickness of the sealing film on the bottom surface side of the semiconductor wafer in a portion corresponding to the dicing street and both sides thereof, Separating the semiconductor wafer into a plurality of semiconductor substrates, forming a resin protective film on the bottom surface of the semiconductor wafer including the inside of the first groove, peeling the support plate, Forming a solder ball on the bump electrode for connection; and the first groove reaching the intermediate position of the thickness of the resin protective film on the lower surface side of the semiconductor wafer to the sealing film and the resin protective film Forming a second groove having a width smaller than the width of the solder, a step of attaching a protective tape having an adhesive on the sealing film including the solder ball, and at least the second resin protective film. Grinding until the grooves are exposed and dividing into individual semiconductor devices, and protecting the resin on the side surface from the side surface of the semiconductor substrate to the intermediate position of the sealing film and the bottom surface of the semiconductor substrate A plurality of semiconductor devices on which a film is formed are obtained.
According to a second aspect of the present invention, in the first aspect of the present invention, the step of forming the resin protective film on the bottom surface of the semiconductor wafer including the inside of the first groove may be performed from 80 to 80 from the bottom surface of the semiconductor wafer. It is a step of forming a thickness of 200 μm.
According to a third aspect of the present invention, in the second aspect of the present invention, the step of grinding the resin protective film until at least the second groove is exposed has a thickness of 20 to 20 from the bottom surface of the semiconductor wafer. It is a process of grinding to 50 μm.
According to a fourth aspect of the present invention, in the first aspect of the invention, after the support plate is attached, the semiconductor wafer includes a step of grinding the bottom surface side of the semiconductor wafer to reduce the thickness of the semiconductor wafer. It is characterized by.
The invention according to claim 5 is the invention according to claim 1, wherein the support plate is made of a glass plate.
According to a sixth aspect of the invention, in the first aspect of the invention, the external connection bump electrode is a columnar electrode formed on the electrode connection pad portion.

  According to the present invention, since the resin protective film is formed on the bottom surface of the semiconductor wafer (each semiconductor substrate) including the inside of the groove in a state where the support plate is attached on the bump electrode for external connection and the sealing film, When forming the resin protective film for protecting the semiconductor substrate, the whole including each semiconductor substrate can be made difficult to warp.

  FIG. 1 is a sectional view showing an example of a semiconductor device manufactured by the manufacturing method of the present invention. This semiconductor device is generally called a CSP and includes a silicon substrate (semiconductor substrate) 1. On the upper surface of the silicon substrate 1, elements constituting an integrated circuit having a predetermined function, for example, elements (not shown) such as a transistor, a diode, a resistor, and a capacitor are formed. A connection pad 2 made of an aluminum-based metal or the like connected to each element is provided. Although only two connection pads 2 are shown in the figure, a large number are actually arranged around the upper surface of the silicon substrate 1.

  A passivation film (insulating film) 3 made of silicon oxide or the like is provided on the upper surface of the silicon substrate 1 excluding the central part of the connection pad 2, and the central part of the connection pad 2 is provided through an opening 4 provided in the passivation film 3. Is exposed. A protective film (insulating film) 5 made of polyimide resin or the like is provided on the upper surface of the passivation film 3. An opening 6 is provided in the protective film 5 in a portion corresponding to the opening 4 of the passivation film 3.

  A wiring 7 is provided on the upper surface of the protective film 5. The wiring 7 has a two-layer structure of a base metal layer 8 made of copper or the like provided on the upper surface of the protective film 5 and an upper metal layer 9 made of copper provided on the upper surface of the base metal layer 8. One end of the wiring 7 is connected to the connection pad 2 via the openings 4 and 6 of the passivation film 3 and the protective film 5. A columnar electrode (external connection bump electrode) 10 made of copper is provided on the upper surface of the connection pad portion (electrode connection pad portion) of the wiring 7.

  A resin protective film 11 made of an epoxy resin or the like is provided on the bottom surface of the silicon substrate 1 and the side surfaces of the silicon substrate 1, the passivation film 3, and the protective film 5. In this case, the upper part of the resin protective film 11 provided on the side surfaces of the silicon substrate 1, the passivation film 3, and the protective film 5 protrudes straight above the upper surface of the protective film 5. In this state, the lower surface of the silicon substrate 1 and the side surfaces of the silicon substrate 1, the passivation film 3, and the protective film 5 are covered with the resin protective film 11.

  A sealing film 12 made of an epoxy resin or the like is provided on the upper surface of the protective film 5 including the wiring 7 and the upper surface of the resin protective film 11 around the protective film 5. The columnar electrode 10 is provided so that the upper surface thereof is flush with the upper surface of the sealing film 12 by several μm. A solder ball 13 is provided on the upper surface of the columnar electrode 10.

  Here, the thickness of the semiconductor device is not limited, but the thickness from the bottom surface of the silicon substrate 1 to the top surface of the sealing film 12 is 200 to 400 μm and is formed on the bottom surface of the silicon substrate 1. The thickness of the resin protective film 11 is as thin as 20 to 50 μm.

  Next, an example of a method for manufacturing this semiconductor device will be described. First, as shown in FIG. 2, on a silicon substrate in a wafer state (hereinafter referred to as a semiconductor wafer 21), two layers comprising a connection pad 2, a passivation film 3, a protective film 5, a base metal layer 8 and an upper metal layer 9 are formed. A structure in which a wiring 7 having a structure, a columnar electrode 10 and a sealing film 12 are formed is prepared. Such a method for manufacturing the semiconductor wafer 21 is already known. For details, refer to FIGS. 2 to 7 of Japanese Patent No. 3955059 and related portions of the specification.

  In this case, the thickness of the semiconductor wafer 21 is somewhat thicker than the thickness of the silicon substrate 1 shown in FIG. Further, the upper surface of the sealing film 12 including the upper surface of the columnar electrode 10 is flat. Here, in FIG. 2, an area indicated by reference numeral 22 is an area corresponding to dicing street.

  2 is prepared, next, as shown in FIG. 3, a support plate 24 is attached to the upper surfaces of the columnar electrode 10 and the sealing film 12 via an adhesive layer 23. In this case, in detail, as shown in FIG. 4, the adhesive layer 23 is usually referred to as a double-sided adhesive tape in which an adhesive is provided on both surfaces of the base film, An ultraviolet curing type uncured lower layer adhesive 23b is provided, and an ultraviolet gas generating uncured upper layer adhesive 23c is provided on the upper surface of the base film 23a (for example, Sekisui Chemical Co., Ltd.) Company adhesive tape (Selfa).

  The upper layer pressure-sensitive adhesive 23c and the lower layer pressure-sensitive adhesive 23b have adhesiveness at room temperature, but are cured by irradiating with ultraviolet rays, and are made of a material that can be peeled off due to a decrease in adhesive force. In particular, the upper pressure-sensitive adhesive 23c contains a gas generating agent that generates gas when irradiated with ultraviolet rays, and details thereof will be described later. Although not shown, in the initial adhesive layer 23, a release tape is attached to the lower surface of the lower layer adhesive 23b and the upper surface of the upper layer adhesive 23c. The support plate 24 is made of a hard plate that is transparent to ultraviolet rays, such as a circular glass plate that is slightly larger than the semiconductor wafer 21.

  First, the release tape on the lower layer adhesive 23 b side of the adhesive layer 23 is peeled off, and the lower layer adhesive 23 b of the adhesive layer 23 is attached to the upper surfaces of the columnar electrode 10 and the sealing film 12. Next, under vacuum, the release tape on the upper adhesive 23c side of the adhesive layer 23 is peeled off, and a support plate 24 made of a glass plate or the like is attached to the upper surface of the upper adhesive 23c of the adhesive layer 23. The reason why the support plate 24 is affixed under vacuum is to prevent air from entering between the support plate 24 and the upper adhesive 23c of the adhesive layer 23.

  Next, the one shown in FIG. 3 is turned upside down, and the bottom surface of the semiconductor wafer 21 (the surface opposite to the surface on which the sealing film 12 or the like is formed) is directed upward as shown in FIG. Next, as shown in FIG. 6, the bottom surface side of the semiconductor wafer 21 is appropriately ground using a grinding wheel (not shown), and the thickness of the semiconductor wafer 21 is changed from, for example, the bottom surface of the semiconductor wafer 21 to the sealing film. The thickness up to the top surface of 12 is reduced to about 200 to 400 μm.

  Next, as shown in FIG. 7, the lower surface of the support plate 24 is attached to the upper surface of the dicing tape 25. Next, as shown in FIG. 8, the blade 26 is prepared. The blade 26 is made of a disk-shaped grindstone, and the cross-sectional shape of the blade edge is substantially U-shaped, and the thickness thereof is somewhat larger than the width of the dicing street 22.

  Then, using this blade 26, the first groove 27 is formed in the semiconductor wafer 21, the passivation film 3, the protective film 5, and the sealing film 12 at the portions corresponding to the dicing street 22 and both sides thereof. In this case, the depth of the 1st groove | channel 27 shall be in the middle of the sealing film 12, for example, is 1/2 or more of the thickness of the sealing film 12, Preferably it is 1/3 or more. In this state, the semiconductor wafer 21 is separated into individual silicon substrates 1 by the formation of the first grooves 27. Next, the support plate 24 is peeled off from the upper surface of the dicing tape 25. In addition, this process can also be processed without sticking to a dicing tape by using a dicing apparatus for half cut.

  Next, as shown in FIG. 9, a thermosetting resin made of epoxy resin or the like is applied to the upper surface of each silicon substrate 1 including the inside of the first groove 27 by spin coating, screen printing, or the like, and cured. By doing so, the resin protective film 11 is formed. In this case, the resin protective film 11 is formed to be considerably thicker than the thickness of the resin protective film 11 shown in FIG. 1, for example, 80 to 200 μm. Although the details of this reason will be described later, the resin protective film 11 is provided with a reinforcing function against warpage and the like in the process from after being formed to before being ground as described later, particularly in the solder ball forming process. . The curing temperature of the resin protective film 11 is 120 to 180 ° C. in consideration of the heat resistance of the UV curable lower layer adhesive 23b (see FIG. 4), and the treatment time is 1 to 2 hours.

  Here, although the semiconductor wafer 21 is separated into individual silicon substrates 1, since the support plate 24 is attached to the lower surfaces of the columnar electrode 10 and the sealing film 12 via the adhesive layer 23, the epoxy resin When the resin protective film 11 made of a thermosetting resin such as the above is applied and cured, the entire structure including the individually separated silicon substrate 1 can be made difficult to warp, and further, by subsequent warping It can be made difficult to cause trouble.

  Next, the one shown in FIG. 9 is turned upside down, and the surface of the silicon substrate 1 on which the sealing film 12 and the like are formed faces upward as shown in FIG. Next, as shown in FIG. 11, ultraviolet rays are irradiated from above the support plate 24. The upper layer pressure sensitive adhesive 23c (see FIG. 4) of the pressure sensitive adhesive layer 23 contains a gas generating agent that generates gas when irradiated with ultraviolet rays. By making the upper surface of the agent 23 c uneven, the adhesive interface between the upper layer adhesive 23 c and the support plate 24 is reduced, the adhesive force is reduced, and the support plate 24 is peeled from the upper layer adhesive 23 c of the adhesive layer 23. be able to.

  Such a pressure-sensitive adhesive containing a gas generating agent that generates gas when irradiated with ultraviolet rays is described in JP-A-2005-294536. The upper layer adhesive 23c is referred to as a self-peeling adhesive because it can be peeled off by generating gas. Further, the ultraviolet curable lower layer pressure-sensitive adhesive 23b (see FIG. 4) of the pressure-sensitive adhesive layer 23 is cured, and the adhesive force between the lower layer pressure-sensitive adhesive 23b, the columnar electrode 10 and the sealing film 12 is reduced. Therefore, next, the adhesive layer 23 is peeled off from the upper surfaces of the columnar electrode 10 and the sealing film 12.

  Here, the reason why the upper adhesive 23c of the adhesive layer 23 is an ultraviolet gas generating type and the lower adhesive 23b is an ultraviolet curable type will be described. Since the support plate 24 made of a glass plate or the like does not have flexibility, the region corresponding to the entire surface of the semiconductor wafer must be peeled off at the same time. If the expression is changed, the so-called peel peeling which peels little by little cannot be performed. For this reason, both cannot be isolate | separated, without giving a deformation | transformation or damage to the support plate 2 or the silicon substrate 1. FIG. Therefore, in order to facilitate the peeling of the support plate 24, the upper layer adhesive 23c is an ultraviolet gas generating type. Thereafter, since the adhesive layer 23 has sufficient flexibility, it can be peeled off. Therefore, the lower layer adhesive 23b is an ultraviolet curable type.

  Next, as shown in FIG. 12, solder balls 13 are formed on the upper surface of the columnar electrode 10. Since the solder ball is mounted on the upper surface of each columnar electrode 10 and is subjected to a reflow process to be joined to each columnar electrode 10, warping is likely to occur throughout. However, in this embodiment, since the thickness of the resin protective film 11 is considerably thicker than that of the final semiconductor device, it is possible to suppress warping. If burrs or oxide films are formed on the upper surface of the columnar electrode 10, the upper surface of the columnar electrode 10 is etched by several μm to remove them.

  Next, as shown in FIG. 13, a blade 28 is prepared. The blade 28 is made of a disc-shaped grindstone, the cross-sectional shape of the cutting edge is substantially U-shaped, and the thickness thereof is the same as the width of the dicing street 22. Then, by performing half dicing using this blade 28, the second groove 29 is formed in the sealing film 12 and the resin protective film 11 in the portion corresponding to the central dicing street 22 in the first groove 27. To do. In this case, the depth of the second groove 29 is set to the middle of the resin protective film 11 on the lower surface side of the silicon substrate 1.

  In the above, the order of the process of forming the solder ball 13 on the upper surface of the columnar electrode 10 and the process of forming the second groove 29 in the sealing film 12 and the resin protective film 11 may be reversed.

  Next, as shown in FIG. 14, an ultraviolet curable uncured adhesive 32 provided on the lower surface of the protective tape 31 is attached to the upper surface of the sealing film 12 including the solder balls 13. In this case, the thickness of the adhesive 32 is thicker than the height of the solder ball 13. Therefore, in this state, the solder ball 13 is completely covered with the adhesive 32.

  Next, the one shown in FIG. 14 is turned upside down so that the bottom surface of the silicon substrate 1 faces upward as shown in FIG. Next, the upper surface side of the resin protective film 11 is ground using a grinding wheel (not shown) until at least the second groove 29 is exposed. In this case, it is recommended that the resin protective film 11 has a thickness from the bottom surface of the silicon substrate 1 of 20 to 50 μm. By this grinding, as shown in FIG. 16, the thickness of the resin protective film 11 is appropriately reduced, and the resin protective film 11 is separated so as to correspond to each silicon substrate 1.

  In this state, the entire surface is separated and separated into pieces by the second grooves 29, but the lower surface of the sealing film 12 including the solder balls 13 of each separated semiconductor device is protected via the adhesive 32. Since it is affixed to the tape 31, the individual semiconductor devices do not fall apart. Further, since the resin protective film 11 is ground until at least the second groove 29 is exposed, the individual semiconductor devices can be made thinner accordingly.

  Next, as shown in FIG. 17, the lower surface of the dicing tape 33 is attached to the upper surfaces of all the resin protective films 11. Next, the one shown in FIG. 17 is turned upside down so that the surface of the silicon substrate 1 on which the sealing film 12 and the like are formed faces upward as shown in FIG. Next, when ultraviolet rays are irradiated from above the protective tape 31, the adhesive 32 is cured, and the adhesive force between the adhesive 32, the solder ball 13, and the sealing film 12 is reduced.

  Next, when the protective tape 31 is peeled off from the upper surface of the sealing film 12 including the solder balls 13 together with the adhesive 32, the upper surface of the sealing film 12 including the solder balls 13 is exposed as shown in FIG. Next, when the resin protective film 11 of each separated semiconductor device is peeled from the upper surface of the dicing tape 33, the semiconductor having a structure in which the bottom and side surfaces of the silicon substrate 1 are covered with the resin protective film 11 as shown in FIG. Multiple devices are obtained.

  As described above, in this method of manufacturing a semiconductor device, as shown in FIG. 1, a semiconductor device having a structure in which the lower surface and side surfaces of the silicon substrate 1 are covered with the resin protective film 11 can be obtained. As shown in FIG. 16, since the resin protective film 11 is ground after half dicing by DGB (Dicing Before Grinding) processing, a thinned semiconductor device can be obtained.

  As described above, in the state shown in FIG. 12, when the solder ball 13 is formed on the upper surface of the columnar electrode 10, the relatively thick resin protective film 11 exhibits a reinforcing function. In this case, even if the temperature of the reflow process for forming the solder balls 13 is relatively high at 250 ° C. or higher, the resin protective film 11 made of a thermosetting resin such as epoxy resin can sufficiently withstand this temperature. it can.

  On the other hand, in the process shown in FIG. 9, the resin protective film 11 is formed by applying and curing a thermosetting resin made of an epoxy resin or the like by a spin coat method, a screen printing method, or the like. Since the curing temperature is relatively low at 150 to 180 ° C., the adhesive layer 23 can sufficiently withstand this temperature.

  In the above embodiment, as the material of the adhesive layer, a case where a double-sided pressure-sensitive adhesive tape having a pressure-sensitive adhesive that generates gas by irradiation of ultraviolet rays to reduce the adhesive strength on one side and a pressure-sensitive adhesive on the other side has been described. However, this can be applied with various modifications. For example, a water-insoluble polymer compound is used as the adhesive layer, a support plate having a large number of small holes, and the support plate is separated by allowing the stripping solution to enter through the large number of small holes. Is possible.

  Further, as the adhesive layer, a material that is thermally decomposed by laser irradiation and can be peeled off can be used. As the support plate, a hard plate made of a glass plate that transmits laser can be used. In addition, in order to speed up signal propagation of an integrated circuit formed on one surface of a semiconductor wafer, there is a material using a low dielectric constant (low-k) material as an insulating film of the integrated circuit. In the process of forming the first groove 27 in the semiconductor wafer 21, the passivation film 3, the protective film 5 and the sealing film 12 by the blade 26 shown in FIG. Since there is a high possibility that the insulating film having a dielectric constant is damaged, for example, before forming the sealing film 12 shown in FIG. It is recommended to remove and form a cut portion having a width equal to or larger than the width of the first groove 27 in the low dielectric constant insulating film. The cut portion of the low dielectric constant insulating film is then filled with the sealing film 12 to be protected from breakage. In addition, the present invention can be applied with various modifications.

Sectional drawing of an example of the semiconductor device manufactured by the manufacturing method of this invention. Sectional drawing of what was initially prepared in an example of the manufacturing method of the semiconductor device shown in FIG. Sectional drawing of the process following FIG. Sectional drawing shown in order to demonstrate the adhesion layer shown in FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. FIG. 9 is a cross-sectional view of the process following FIG. 8. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. Sectional drawing of the process following FIG. FIG. 15 is a sectional view of a step following FIG. 14. FIG. 16 is a cross-sectional view of the process following FIG. 15. FIG. 17 is a cross-sectional view of the process following FIG. 16. FIG. 18 is a cross-sectional view of the process following FIG. 17. FIG. 19 is a cross-sectional view of the process following FIG. 18.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Silicon substrate 2 Connection pad 3 Passivation film 5 Protective film 7 Wiring 10 Columnar electrode 11 Resin protective film 12 Sealing film 13 Solder ball 21 Semiconductor wafer 22 Dicing street 23 Adhesive layer 24 Support plate 25 Dicing tape 26 Blade 27 First groove 28 Blade 29 Second groove 31 Protective tape 32 Adhesive 33 Dicing tape

Claims (6)

An insulating film is formed on the one surface of the semiconductor wafer on which the integrated circuit is formed on one surface, and an electrode connection pad portion is formed on the insulating film so as to be connected to the integrated circuit, and on the electrode connection pad portion. A step of preparing a bump electrode for external connection formed and a sealing film formed around the external connection bump electrode;
A step of attaching a support plate on the external connection bump electrode and the sealing film;
Forming a first groove reaching a middle position of the thickness of the sealing film on the bottom surface side of the semiconductor wafer in the dicing street and portions corresponding to both sides thereof, and separating the semiconductor wafer into a plurality of semiconductor substrates; ,
Forming a resin protective film on the bottom surface of the semiconductor wafer including the inside of the first groove;
Peeling the support plate;
Forming solder balls on the external connection bump electrodes;
A second groove having a width smaller than the width of the first groove reaching the middle position of the thickness of the resin protective film on the lower surface side of the semiconductor wafer is formed in the sealing film and the resin protective film. Process,
Attaching a protective tape having an adhesive on the sealing film containing the solder balls;
Grinding the resin protective film until at least the second groove is exposed, and singulating into individual semiconductor devices;
A plurality of semiconductor devices having a resin protective film formed on a side surface from the side surface of the semiconductor substrate to an intermediate position of the sealing film and on a bottom surface of the semiconductor substrate. Method.   In the first aspect of the present invention, the step of forming the resin protective film on the bottom surface of the semiconductor wafer including the inside of the first groove is a step of forming a thickness of 80 to 200 μm from the bottom surface of the semiconductor wafer. A method for manufacturing a semiconductor device, comprising:   In the invention according to claim 2, the step of grinding the resin protective film until at least the second groove is exposed is a step of grinding so that the thickness from the bottom surface of the semiconductor wafer is 20 to 50 μm. A method for manufacturing a semiconductor device, comprising:   2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of grinding the bottom surface side of the semiconductor wafer to reduce the thickness of the semiconductor wafer after the support plate is attached. .   2. The method of manufacturing a semiconductor device according to claim 1, wherein the support plate is made of a glass plate.   2. The method of manufacturing a semiconductor device according to claim 1, wherein the external connection bump electrode is a columnar electrode formed on the electrode connection pad portion.

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