JP2010141368A - Device and method for adsorbing metal or metal compound - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device for adsorbing a metal catalyst for growing a silicon crystal onto amorphous silicon. <P>SOLUTION: This device for adsorbing a metal or metal compound onto amorphous silicon is used for crystallizing silicon by a metal-induced crystallization method. The device for adsorbing a metal or metal compound includes: a material gas supply part for supplying a material gas containing vapor or gas of an organic metal compound; a chamber for adsorbing a metal constituent of the material gas onto the amorphous silicon; and a control part for executing control so that a metal or metal compound is adsorbed onto the amorphous silicon at a coverage factor below 1 by adjusting at least one of adsorption pressure, an adsorption time and an adsorption temperature. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to the manufacture of a polycrystalline silicon thin film applied to a thin film transistor (hereinafter also referred to as TFT) used in a liquid crystal display device (also referred to as LCD), an organic EL display device (OLED), and the like. The present invention relates to an apparatus and an adsorption method for adsorbing a metal or a metal-organic compound on an amorphous silicon thin film in order to improve the crystallization characteristics by lowering the crystallization temperature when a polycrystalline silicon thin film is formed. .

TFTs are roughly classified into amorphous silicon TFTs and polycrystalline silicon TFTs. The characteristics of TFT are evaluated by the value of electron mobility. Since the electron mobility of the amorphous silicon TFT is approximately 1 cm ² / Vs, and the electron mobility of the polycrystalline silicon thin film transistor is approximately 100 cm ² / Vs, the polycrystalline silicon TFT is used for a high-performance liquid crystal display device. It is preferable to adopt. A polycrystalline silicon TFT is formed by depositing amorphous silicon on a transparent substrate such as glass or quartz to be polycrystalline, forming a gate oxide film and a gate electrode, implanting a dopant into the source and drain, and then insulating layers. Is formed and manufactured.

  When manufacturing a polycrystalline silicon TFT, the main process is a step of polycrystallizing an amorphous silicon thin film. In particular, it is preferable to lower the crystallization temperature. When the crystallization temperature is very high, a glass substrate having a low softening point cannot be used when manufacturing a TFT, and there is a problem that the manufacturing cost of the TFT is greatly increased. In consideration of the possibility of using such a glass substrate, various processes have been proposed recently that can form a polycrystalline silicon thin film within a short time at a low temperature.

The excimer laser crystallization method is a method of melting and recrystallizing amorphous silicon using excimer laser irradiation, which can prevent damage to the glass substrate due to rapid heating and has the advantage of excellent crystallinity of polycrystalline silicon There is. However, the reproducibility is lowered and the configuration of the apparatus is complicated.
The rapid heat treatment method uses an infrared lamp to rapidly heat amorphous silicon and has the advantages of high production speed and low production cost. However, it has disadvantages such as thermal shock due to rapid heating and deformation of the glass substrate. is there.

  In addition, the metal induced crystallization (MIC) method is a method in which a metal such as Ni, Cu, Al or a metal compound thereof is applied to amorphous silicon as a metal catalyst, and crystallization is induced at a low temperature. Although there is an advantage that crystallization is possible at a low temperature, there is a problem that a leakage current is greatly increased by a considerable amount of metal components contained in the activated region.

  Metal Induced Lateral Crystallization (MILC) method was developed to prevent metal contamination generated by the MIC method. MIC is prioritized by depositing a metal catalyst in the source / drain region. In this method, polycrystalline silicon is grown on the side surface in the activation region below the gate using the seed as a seed. The MILC method has the advantage of less metal contamination in the crystallized region grown on the side surface than the MIC method, but the problem of leakage current remains unchanged. The generation of leakage current causes the problem of changing the data voltage charged in each pixel of a liquid crystal display device or the like, and generally deteriorates the characteristics of the display device.

  As described above, the introduction of the metal component during the manufacture of the TFT has the advantage that the glass substrate can be used by lowering the crystallization temperature of the amorphous silicon, but the TFT characteristics are deteriorated due to contamination by the metal component. Due to the disadvantages, when the metal catalyst is introduced into the amorphous silicon thin film, it is very important to adjust the amount introduced. That is, if a large amount of a metal catalyst is introduced to lower the crystallization temperature, serious problems such as metal contamination occur. If a small amount of metal catalyst is introduced in order to prevent such a problem of metal contamination, the crystallization temperature, which is the original purpose of introducing the metal catalyst, cannot be lowered. Therefore, it is most preferable to lower the crystallization temperature while introducing as little metal catalyst as possible.

  Generally, as a method for introducing a metal catalyst onto an amorphous silicon thin film at the time of manufacturing a TFT, a sputtering method or a spin coating method is used. Has been mainly used. However, the conventional sputtering method cannot adjust the amount of the metal catalyst introduced onto the amorphous silicon thin film to a small amount. For example, when a metal catalyst is applied by a sputtering method, the application rate and application time must be kept small if the application amount is to be reduced. However, there is a problem that it is very difficult to keep the coating conditions constant in a region where the coating speed is low and the coating time is short.

The present invention made to solve the problems of the prior art as described above is an apparatus capable of adsorbing a metal or a metal organic compound on an amorphous silicon thin film in order to crystallize silicon by a metal induced crystallization method. And to provide a method.
In addition, the present invention provides an apparatus and an adsorption method capable of adsorbing an appropriate concentration of metal or metal organic compound on an amorphous silicon thin film in order to minimize metal contamination that deteriorates various characteristics of semiconductors and displays. The purpose is to provide.

  In order to achieve the above-mentioned object, the metal or metal compound adsorption apparatus according to the present invention is an apparatus that adsorbs a metal or metal compound on amorphous silicon in order to crystallize silicon by a metal induced crystallization method. A source gas supply unit for supplying a source gas containing a vapor or gas of an organometallic compound, a chamber for adsorbing the metal component on the amorphous silicon, and an adsorption pressure, an adsorption time, and an adsorption temperature; And a control unit that controls the metal or metal compound to be adsorbed to a coverage of less than 1 on the amorphous silicon by adjusting at least one of them.

In order to achieve the above object, the metal or metal compound adsorption method according to the present invention is a method of adsorbing a metal or metal compound on amorphous silicon in order to crystallize silicon by a metal induced crystallization method. And adjusting at least one of the steps of disposing amorphous silicon in the chamber, injecting a source gas containing vapor or gas of organometallic compound into the chamber, adsorption pressure, adsorption time and adsorption temperature. A step of adsorbing a predetermined amount of source gas on the amorphous silicon, discharging a source gas not adsorbed on the amorphous silicon from the chamber, and flowing auxiliary gas into the chamber , And the auxiliary gas reacts with the source gas adsorbed on the amorphous silicon, and finally the predetermined gas is formed on the amorphous silicon. Metals or metal compounds, characterized in that it comprises a step to be adsorbed.
In order to achieve the above-described object, the metal or metal compound adsorption method according to the present invention includes an organometallic compound vapor or gas on amorphous silicon to crystallize silicon by a metal-induced crystallization method. A step of disposing amorphous silicon in a chamber; a step of introducing a raw material gas containing an organic metal vapor or gas into the chamber; and an adsorption pressure, an adsorption time and an adsorption temperature. The method includes the step of adsorbing a predetermined amount of source gas on the amorphous silicon by adjusting at least one of the above.

According to the present invention, the amount of metal or metal compound adsorbed on the amorphous silicon thin film can be appropriately and finely adjusted, and the metal depends on the metal while lowering the crystallization temperature during crystallization of amorphous silicon. Contamination can be prevented, and various characteristics of semiconductors and display devices are improved.
Further, according to the present invention, since it can be applied to a substrate having a large area, the productivity of a flat display device such as a liquid crystal display device can be improved and the production cost can be reduced.

It is the conceptual diagram which showed the metal or organometallic compound adsorption | suction apparatus which concerns on this invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a conceptual diagram showing a metal or metal compound adsorption device 10 according to the present invention. As shown in FIG. 1, a metal or metal compound adsorption device 10 includes a raw material gas supply unit 11, an auxiliary gas supply unit 12, a transport gas supply unit 13, a gas inflow unit 14, a gas discharge unit 15, an adsorption chamber 16, and a heating. The unit 17 and the control unit 18 are included.

  The source gas supply unit 11 serves to supply a source gas containing an organometallic compound corresponding to a source of metal or metal compound adsorbed on the amorphous silicon thin film into the adsorption chamber 16. In general, since the organometallic compound exists in a solid or liquid form at room temperature, the source gas supply unit 11 may include a source gas heating unit that uses a solid or liquid organometallic compound as a vapor or gas. it can.

The source gas supplied from the source gas supply unit 11 for crystallization of silicon by the metal induction crystallization method is any one of Ni, Al, Ti, Ag, Au, Co, Sb, Pd, and Cu. Or it can contain two or more components.
When nickel is used as the metal catalyst as in the present invention, the gas or vapor contained in the raw material gas is represented by Ni (Cp) ₂ biscyclopentadienyl nickel or Ni (dmamb) _2. Bis (1-dimethylamino-2-methyl-2-butanolate) Ni [OC (CH ₃ ) (C ₂ H ₅ ) CH ₂ N (CH ₃ ) ₂ ] ₂ can be mentioned.

The auxiliary gas supply unit 12 serves to supply an auxiliary gas capable of reacting with the source gas into the adsorption chamber 16 so that the metal or the metal compound is finally adsorbed on the amorphous silicon thin film. That is, the source gas contains components other than metal, and in order to adsorb nickel onto the amorphous silicon thin film, the organic group which is a component other than nickel of the organic nickel compound must be removed. However, the organic group can be removed by the auxiliary gas. In other words, nickel is adsorbed onto the amorphous silicon thin film by reacting the raw material gas Ni (Cp) ₂ with the auxiliary gas to remove the organic component. For example, Ni (Cp) ₂ + H ₂ −> Ni + _m C _n H _{2n + 2}

As the auxiliary gas, a reducing gas such as hydrogen or ammonia, or an oxidizing gas such as oxygen, nitrous oxide, water, or ozone can be used. On the other hand, when the raw material gas from which components other than the metal are not removed is adsorbed on the amorphous silicon thin film as it is, the auxiliary gas is not used, so the auxiliary gas supply unit may not be required.
The carrier gas supply unit 13 serves to supply the carrier gas so that the source gas is smoothly supplied into the adsorption chamber 16. That is, the source gas moves more smoothly by the carrier gas and flows into the adsorption chamber 16.

The carrier gas supplied from the carrier gas supply unit 13 may flow into the adsorption chamber 16 after passing through the raw material gas supply unit 11, or may flow into the adsorption chamber 16 immediately. Both are preferably possible. When the mobility of the raw material gas is sufficient, the carrier gas need not be used. The carrier gas can also serve as a purge gas for purging the inside of the adsorption chamber 16. As the carrier gas, any one or two or more inert gases of argon, neon, helium, and nitrogen can be used.
The gas inflow portion 14 and the gas discharge portion 15 are provided at the front end or the rear end of the adsorption chamber 16, and are portions where gas flows into and out of the adsorption chamber 16. The gas that flows in or out through the gas inlet 14 and the gas outlet 15 is a raw material gas, an auxiliary gas (if necessary), a carrier gas (if necessary), or a raw material that could not be adsorbed on the amorphous silicon thin film. Gas, by-product gas generated by reaction of raw material gas and auxiliary gas is included.

The adsorption chamber 16 serves to adsorb metal or metal compound on the amorphous silicon thin film. Here, adsorption means both chemical adsorption and physical adsorption.
The thin film of amorphous silicon is formed on a glass substrate 19 applicable to a TFT substrate such as a liquid crystal display device. The number of glass substrates placed in the adsorption chamber 16 at one time may be a single-wafer type adsorption chamber, or a batch type adsorption chamber that handles two or more pieces. A chamber is more preferred.

When the raw material gas flowing into the adsorption chamber 16 is adsorbed as it is, the organometallic compound is adsorbed onto the amorphous silicon thin film. In this case, even if the raw material gas is adsorbed, if it reacts with the auxiliary gas, only the metal component is adsorbed as a result on the amorphous silicon thin film.
The adsorption chamber 16 can include a heating unit 17. The heating unit 17 serves to supply heat energy necessary for adsorbing a metal or metal compound on the amorphous silicon thin film.

In the adsorption process of the present invention, the temperature of the amorphous silicon thin film is preferably maintained within the range of 100 to 250 ° C. However, when the organometallic compound is adsorbed on the amorphous silicon thin film, no thermal energy may be required. In such a case, the heating unit 17 may not be operated, or the heating unit may not be provided in the adsorption chamber 16 from the beginning.
The controller 18 maintains the pressure (adsorption pressure) of the gas in the adsorption chamber 16 during the adsorption process so that an appropriate amount of metal or organometallic compound is adsorbed on the amorphous silicon thin film. It plays the role of adjusting the time (adsorption time) and the temperature of the amorphous silicon thin film (adsorption temperature).

In the present invention, in order to minimize the amount of metal or metal compound adsorbed (adsorption concentration) so as to minimize metal contamination while lowering the crystallization temperature of silicon using a metal induced crystallization method, At least one of the adsorption pressure, the adsorption time, and the adsorption temperature is adjusted through the control unit 18.
The amount of metal or metal compound adsorbed on the amorphous silicon thin film increases as the adsorption pressure and adsorption time increase. Therefore, by adjusting the adsorption pressure and the adsorption time, the adsorption concentration of the metal or organometallic compound can be adjusted.

The adsorption pressure includes the flow rate of the raw material gas supplied from the raw material gas supply unit 11, the total flow rate of the gas flowing into the adsorption chamber 16 through the gas inflow unit 14, and the total flow rate of the gas discharged from the adsorption chamber 16 through the gas discharge unit 15. It can be controlled by adjusting at least one of them. The gas flowing into or exhausting the adsorption chamber 16 includes auxiliary gas or carrier gas. Therefore, it is preferable that the control unit 18 can also control the flow rate of the auxiliary gas supplied from the auxiliary gas supply unit 12 and the flow rate of the transfer gas supplied from the transfer gas supply unit 13.
Further, since heat energy is required in the adsorption process, the adsorption concentration of the metal or metal compound can be adjusted by adjusting the adsorption temperature in the adsorption process through the controller 18. The adsorption temperature can be controlled by adjusting the temperature of the heating unit 17 in the adsorption chamber 16. For reference, in FIG. 1, a dotted line indicates between the control unit 18 and each component controlled by the control unit.

Hereinafter, a method for adsorbing a metal or a metal compound using the adsorption apparatus 10 according to the present invention will be described in detail.
First, a glass substrate 19 on which an amorphous silicon thin film is formed is placed in the adsorption chamber 16. After the glass substrate 19 is arranged, the adsorption chamber 16 is evacuated by a vacuum pump (not shown) so that the pressure in the adsorption chamber 16 is about 13.3 Pa (100 mTorr), preferably about 1.33 Pa (10 mTorr).
Next, a raw material gas containing an organometallic compound corresponding to the raw material of the metal or metal compound adsorbed on the amorphous silicon thin film is supplied from the raw material gas supply unit 11 into the adsorption chamber 16 through the gas inflow unit 14. When the organometallic compound is present in a solid or liquid form at normal temperature, the solid or liquid organometallic compound is heated to a temperature higher than normal temperature and vaporized. At this time, the source gas may include any one or two or more organometallic compounds among Ni, Al, Ti, Ag, Au, Co, Sb, Pd, and Cu.

When nickel is used as the metal catalyst, the raw gas is biscyclopentadienyl nickel represented by Ni (Cp) ₂ , bis (1-dimethylamino-2-methyl-2-butanolate represented by Ni (dmamb) ₂ ) Ni [OC (CH ₃ ) (C ₂ H ₅ ) CH ₂ N (CH ₃ ) ₂ ] ₂ .

Subsequently, the carrier gas is supplied from the carrier gas supply unit 13 so that the source gas is smoothly supplied into the adsorption chamber 16 through the gas inflow portion 14. As the carrier gas, any one of Ar, Ne, He, and N ₂ or two or more inert gases can be used. The carrier gas causes the source gas supplied from the source gas supply unit 11 to move smoothly. In this case, it is preferable that both the raw material gas and the carrier gas flow into the adsorption chamber 16. When the carrier gas passes through the raw material gas supply unit 11, the mobility of the raw material gas is increased more efficiently. However, when the mobility of the raw material gas is sufficient, the carrier gas may not be used.

Next, the raw material gas containing the organometallic compound that has flowed into the adsorption chamber 16 is adsorbed onto the amorphous silicon thin film. For example, when Ni (Cp) ₂ or Ni (dmamba) ₂ is used as the source gas, these organometallic compounds are adsorbed on the amorphous silicon thin film as they are.

  In the present invention, the organic metal compound is adsorbed onto the amorphous silicon thin film formed on the glass substrate 19 by holding the glass substrate 19 in the atmosphere containing the source gas in the adsorption chamber 16. This process is a chemical adsorption process in which a metal component constituting an organometallic compound, for example, nickel, is chemically adsorbed on silicon of an amorphous silicon thin film. However, in the actual adsorption process, a metal or a metal compound may be physically adsorbed on the amorphous silicon thin film. The metal or metal compound thus physically adsorbed can play a catalytic role to lower the crystallization temperature of silicon.

The amount of the organometallic compound to be adsorbed, that is, the adsorption concentration depends on the pressure of the gas in the adsorption chamber 16 (adsorption pressure), the time during which the pressure is maintained (adsorption time), the temperature of the amorphous silicon thin film (adsorption temperature), and the like. Directly affected. Therefore, if the adsorption pressure, adsorption time, and adsorption temperature are appropriately controlled by the control unit 18, the adsorption concentration can be finely adjusted.
First, the adsorption pressure of the organometallic compound can be adjusted by controlling the adsorption pressure. Since the adsorption pressure is directly related to the flow rate of the raw material gas supplied from the raw material gas supply unit 11, if the supply flow rate of the raw material gas is reduced, the adsorption pressure is reduced, thereby reducing the adsorption concentration. . On the other hand, if the supply flow rate of the raw material gas is increased, the adsorption concentration can be increased.

  Further, the adsorption pressure can be controlled by adjusting the total flow rate of gas flowing into the adsorption chamber 16 through the gas inflow portion 14 and the total flow rate of gas discharged from the adsorption chamber 16 through the gas discharge portion 15. For example, by adjusting the difference between the total flow rate of the gas flowing into the adsorption chamber 16 and the total flow rate of the gas discharged from the adsorption chamber 16, the adsorption pressure can be controlled, and thereby the adsorption concentration can be controlled. Of course, the above-described method includes a method in which when the inside of the adsorption chamber 16 reaches a predetermined adsorption pressure, the adsorption pressure is controlled by closing the gas inlet 14 and the gas outlet 15.

  The adsorption concentration of the organometallic compound can also be adjusted by controlling the adsorption time. For example, the adsorption concentration of the organometallic compound can be reduced as the adsorption time during which the adsorption pressure is maintained is shortened. Further, the adsorption concentration can be adjusted by controlling the adsorption temperature. In general, since predetermined heat energy is required during the adsorption process, the adsorption concentration of the organometallic compound can be reduced by lowering the adsorption temperature. However, if the adsorption temperature is very low, the adsorption phenomenon itself may not occur from the beginning, and if the adsorption temperature is very high, the adsorbed organometallic compound may be separated from the amorphous silicon thin film. . The control of the adsorption temperature is performed by the control unit 18 adjusting the temperature of the heating unit 17.

  It is better to maintain the temperature of the amorphous silicon thin film at a predetermined adsorption temperature before the adsorption step is started. The adsorption temperature is preferably maintained within the range of 100 to 250 ° C. When no heat energy during adsorption is required depending on the type of raw material gas (for example, when adsorption at room temperature is possible), the adsorption temperature may be controlled to be room temperature.

On the other hand, when crystallized silicon is applied to a TFT or the like, the adsorption concentration may have to be minimized in order to prevent deterioration in characteristics of semiconductors and displays due to metal contamination. For this purpose, it is necessary to adjust so that the metal is adsorbed to less than the monoatomic layer on the amorphous silicon thin film. Here, the term “under monoatomic layer” means that the entire area of the amorphous silicon thin film cannot be completely covered with the monoatomic layer of the metal catalyst, that is, the metal is continuously adsorbed on the entire amorphous silicon thin film. It is said that the coverage is less than 1 when it is adsorbed in some places.
At this time, the metal adsorption device 10 according to the present invention can finely adjust the adsorption concentration by controlling at least one of the adsorption pressure, adsorption time, and adsorption temperature, so that the coverage as described above becomes less than 1. Thus, there is an advantage that the adsorption concentration can be adjusted.

  Next, in the adsorption step, a source gas containing an organometallic compound that is not adsorbed on the amorphous silicon thin film is discharged from the adsorption chamber 16 through the gas discharge unit 15. The source gas exhausted in this process was initially adsorbed on the amorphous silicon thin film, but its adsorption level was weak, for example, the source gas physically adsorbed on the amorphous silicon thin film Etc., which include source gases that are separated and removed from the amorphous silicon thin film. When this stage is finished, the process of adsorbing the organometallic compound from the source gas onto the amorphous silicon thin film is finished. At this time, the carrier gas supplied from the carrier gas supply unit 12 can flow into the adsorption chamber 16 and be used for discharging the source gas.

Next, a metal or a metal compound is adsorbed on the amorphous silicon thin film. For this purpose, first, auxiliary gas is supplied from the auxiliary gas supply unit 12 into the adsorption chamber 16 through the gas inflow unit 14. Thus, the auxiliary gas supplied into the adsorption chamber 16 reacts with the raw material gas containing the organometallic compound adsorbed on the amorphous silicon thin film, and finally reaches the amorphous silicon thin film. Allow the metal to be adsorbed.
For example, nickel is adsorbed onto the amorphous silicon thin film by reacting Ni (Cp) ₂ in the source gas with the auxiliary gas to remove the organic component. When hydrogen is used as an auxiliary gas, nickel and hydrocarbon are produced.

As an auxiliary gas, a reducing gas such as hydrogen or ammonia, or an oxidizing gas such as oxygen, nitrous oxide, water, or ozone can be used.
Finally, a by-product gas generated as a result of the reaction between the raw material gas and the auxiliary gas is discharged from the adsorption chamber 16 through the gas discharge unit 15. When this step is finished, the process of adsorbing metal or metal compound on the amorphous silicon thin film is finished. At this time, the carrier gas supplied from the carrier gas supply unit 12 can be used to flow into the adsorption chamber 16 and discharge the by-product gas.
Specific examples of the present invention are shown below.

Example 1
1. First-stage silicon layer formation process An amorphous silicon layer having a thickness of 50 nm is formed on a glass substrate at 250 ° C. at 133 Pa (1 Torr) in a mixed gas of silane and hydrogen by plasma enhanced chemical vapor deposition. Formed.
2. Second Stage Adsorption Process After reducing the pressure in the chamber to 1.33 Pa (10 mTorr), biscyclopentadinickel vaporized at 90 ° C. is supplied as raw material gas at a flow rate of 1 sccm together with argon at a flow rate of 400 sccm, and 400 Pa (3 Torr) ), The adsorption operation was carried out by changing the adsorption temperature from 150 ° C. to 230 ° C. The adsorption time was 10 minutes.
Next, the pressure was reduced to 1.33 Pa (10 mTorr) to remove biscyclopentadienyl nickel that was not adsorbed.

3. Third Step Heat Treatment Step Heat treatment was performed at 600 ° C. in a normal pressure nitrogen atmosphere for 1 hour.
4). Fourth Step Evaluation and Analysis Step When the concentration of the adsorbed nickel atoms was measured using a secondary ion mass spectrometer (SIMS), it was as follows.
150 ° C. Sputtering depth 6 nm 2.64 × 10 ¹⁹ / cm ³
180 ° C. Sputtering depth 6 nm 2.62 × 10 ¹⁹ / cm ³
230 ° C. Sputtering depth 6 nm 1.14 × 10 ²⁰ / cm ³

According to the present invention, since it can be applied to a substrate having a large area, the productivity of a flat display device such as a liquid crystal display device can be increased and the production cost can be reduced. Therefore, it can be said that the industrial applicability of the present invention is extremely high.
On the other hand, while the invention has been described in terms of several preferred embodiments within the present specification, many variations and modifications will occur to those skilled in the art without departing from the scope and spirit of the invention as disclosed in the appended claims. It should be understood that can be made.

  DESCRIPTION OF SYMBOLS 10 ... Metal or metal compound adsorption | suction apparatus, 11 ... Raw material gas supply part, 12 ... Auxiliary gas supply part, 13 ... Carrier gas supply part, 14 ... Gas inflow part, 15 ... Gas discharge part, 16 ... Adsorption chamber, 17 ... Heating Part, 18 ... control part

Claims (5)

An apparatus for adsorbing a metal or a metal compound on amorphous silicon to crystallize silicon by a metal-induced crystallization method,
A raw material gas supply unit for supplying a raw material gas containing vapor or gas of an organometallic compound,
A chamber for adsorbing a metal component on the amorphous silicon with the source gas, and a metal or a metal compound is coated on the amorphous silicon by adjusting at least one of adsorption pressure, adsorption time, and adsorption temperature. An apparatus for adsorbing a metal or a metal compound, comprising a control unit that controls to adsorb at a rate of less than 1.   The metal according to claim 1, wherein the source gas is any one of biscyclopentadienyl nickel and bis (1-dimethylamino-2-methyl-2-butanolate) nickel. Metal compound adsorption device.   The adsorption pressure is controlled by adjusting at least one of a flow rate of the source gas supplied from the source gas supply unit, a total flow rate of the gas flowing into the chamber, and a total flow rate of the gas discharged from the chamber. The metal or metal compound adsorption device according to claim 1, wherein the metal or metal compound adsorption device is provided.   4. The metal or metal compound adsorption device according to claim 1, wherein the adsorption temperature is controlled in a range of room temperature to 250 ° C. 5.   A method for adsorbing a metal or a metal compound, wherein the adsorption apparatus according to claim 1 is used.

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